Controlling Pt nanoparticle sintering by sub-monolayer MgO ALD thin films

Metal nanoparticle (NP) sintering is a major cause of catalyst deactivation, as NP growth reduces the surface area available for reaction. A promising route to halt sintering is to deposit a protective overcoat on the catalyst surface, followed by annealing to generate overlayer porosity for gas transport to the NPs. Yet, such a combined deposition-annealing approach lacks structural control over the cracked protection layer and the number of NP surface atoms available for reaction. Herein, we exploit the tailoring capabilities of atomic layer deposition (ALD) to deposit MgO overcoats on archetypal Pt NP catalysts with thicknesses ranging from sub-monolayers to nm-range thin films. Two different ALD processes are studied for the growth of MgO overcoats on Pt NPs anchored on a SiO2 support, using Mg(EtCp)2 and H2O, and Mg(TMHD)2 and O3, respectively. Spectroscopic ellipsometry and X-ray photoelectron spectroscopy measurements reveal significant growth on both SiO2 and Pt for the former process, while the latter exhibits a drastically lower growth per cycle with an initial chemical selectivity towards Pt. These differences in MgO growth characteristics have implications for the availability of uncoated Pt surface atoms at different stages of the ALD process, as probed by low energy ion scattering, and for the sintering behavior during O2 annealing, as monitored in situ with grazing incidence small angle X-ray scattering (in situ GISAXS). The Mg(TMHD)2-O3 ALD process enables exquisite coverage control allowing a balance between physically blocking the Pt surface to prevent sintering and keeping Pt surface atoms free for reaction. This approach avoids the need for post-annealing, hence also safeguarding the structural integrity of the as-deposited overcoat.

Depositing ALD-oxides on MLD-metalcones: enhancing initial growth through O2 plasma densification

Flexible devices are experiencing a steady increase in popularity, which brings the need of suitable protective/functional coatings for these applications. On the one hand, Atomic Layer Deposition (ALD) produces thin films with great purity, few pinholes and good conformality, but flexibility is rather limited. On the other hand, Molecular Layer Deposition (MLD) can produce partially/fully organic coatings with good flexibility, but stability concerns limit their applications. Therefore, combining ALD and MLD to obtain materials with good flexibility and improved characteristics holds great potential. In this article, we utilised O₂ plasma treatments on various metalcone films to improve the compatibility of sequential ALD/MLD depositions. During plasma modification, in situ spectroscopic ellipsometry measurements (in situ SE) suggested that mainly the near-surface region of the metalcone layer was affected by the plasma treatment, locally converting the metalcone into a metal-oxide structure. This structure shielded the underlying metalcone layer from the plasma, thus resulting in a saturative-type behaviour even during extended plasma exposures. X-Ray reflectivity measurements (XRR) could only be fitted with bilayer models, while Fourier-Transform InfraRed spectroscopy (FTIR) showed an absorption decrease in the C-O band and an increase in the CO region. Additionally, film air stability seemed improved by this treatment. ALD-oxides were grown on these plasma-treated metalcones (PT-metalcones), and results were compared to pristine ones. While ALD growth on pristine metalcones always suffered from a delay, after which linear growth was achieved, oxides on PT-metalcones exhibited linear growth immediately, from cycle one. We therefore conclude that, upon O₂ plasma exposure, metalcones are densified into a metalcone/oxide bilayer, where the oxide shields the underlying film from further oxidation. And, if an ALD oxide coating is to be deposited on top of these structures, this plasma treatment will make the structure more suitable for post-processing. In applications that require the combination of ALD/MLD multistacks, the use of an intermittent plasma treatment can prove useful.

Atomic layer deposition of ternary ruthenates by combining metalorganic precursors with RuO4 as the co-reactant

In this work, the use of ruthenium tetroxide (RuO₄) as a co-reactant for atomic layer deposition (ALD) is reported. The role of RuO₄ as a co-reactant is twofold: it acts both as an oxidizing agent and as a Ru source. It is demonstrated that ALD of a ternary Ru-containing metal oxide (i.e. a metal ruthenate) can be achieved by combining a metalorganic precursor with RuO₄ in a two-step process. RuO₄ is proposed to combust the organic ligands of the adsorbed precursor molecules while also binding RuO₂ to the surface. As a proof of concept two metal ruthenate processes are developed: one for aluminum ruthenate, by combining trimethylaluminum (TMA) with RuO₄; and one for platinum ruthenate, by combining MeCpPtMe₃ with RuO₄. Both processes exhibit self-limiting surface reactions and linear growth as a function of the number of ALD cycles. The observed saturated growth rates are relatively high compared to what is usually the case for ALD. At 100 °C sample temperature, growth rates of 0.86 nm per cycle and 0.52 nm per cycle are observed for the aluminum and platinum ruthenate processes, respectively. The TMA/RuO₄ process results in a 1 : 1 Al to Ru ratio, while the MeCpPtMe₃/RuO₄ process yields a highly Ru-rich composition with respect to Pt. Carbon, hydrogen and fluorine impurities are present in the thin films with different relative amounts for the two investigated processes. For both processes, the as-deposited films are amorphous.

Converting molecular layer deposited alucone films into Al2O3/alucone hybrid multilayers by plasma densification

Alucones are one of the best-known films in the Molecular Layer Deposition (MLD) field. In this work, we prove that alucone/Al2O3 nanolaminate synthesis can be successfully performed by alternating alucone MLD growth with static O2 plasma exposures. Upon plasma treatment, only the top part of the alucone is densified into Al2O3, while the rest of the film remains relatively unaltered. X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS) depth profiling show that the process yields a bilayer structure, which remains stable in air. Fourier-transform infrared spectroscopy (FTIR) measurements show that Al2O3 features are generated after plasma treatment, while the original alucone features remain, confirming that plasma treatment results in a bilayer structure. Also, an intermediate carboxylate is created in the interface. Calculations of Al atom density during plasma exposure point towards a partial loss of Al atoms during plasma treatment, in addition to the removal of the glycerol backbone. The effect of different process parameters has been studied. Densification at the highest temperature possible (200 °C) has the best alucone preservation without hindering its thermal stability. In addition, operating at the lowest plasma power is found the most beneficial for the film, but there is a threshold that must be surpassed to achieve successful densification. About 70% of the original alucone film thickness can be expected to remain after densification, but thicker films may result in more diffuse interfaces. Additionally, this process has also been successfully performed in multilayers, showing real potential for encapsulation applications.

Reaction mechanism of the Me3AuPMe3-H2 plasma-enhanced ALD process

The reaction mechanism of the recently reported Me₃AuPMe₃-H₂ plasma gold ALD process was investigated using in situ characterization techniques in a pump-type ALD system. In situ RAIRS and in vacuo XPS measurements confirm that the CH₃ and PMe₃ ligands remain on the gold surface after chemisorption of the precursor, causing self-limiting adsorption. Remaining surface groups are removed by the H₂ plasma in the form of CH₄ and likely as PH_xMe_y groups, allowing chemisorption of new precursor molecules during the next exposure. The decomposition behaviour of the Me₃AuPMe₃ precursor on a Au surface is also presented and linked to the stability of the precursor ligands that govern the self-limiting growth during ALD. Desorption of the CH₃ ligands occurs at all substrate temperatures during evacuation to high vacuum, occurring faster at higher temperatures. The PMe₃ ligand is found to be less stable on a gold surface at higher substrate temperatures and is accompanied by an increase in precusor decomposition on a gold surface, indicating that the temperature dependent stability of the precursor ligands is an important factor to ensure self-limiting precursor adsorption during ALD. Remarkably, precursor decomposition does not occur on a SiO₂ surface, in situ transmission absorption infrared experiments indicate that nucleation on a SiO₂ surface occurs on Si-OH groups. Finally, we comment on the use of different co-reactants during PE-ALD of Au and we report on different PE-ALD growth with the reported O₂ plasma and H₂O process in pump-type versus flow-type ALD systems.

In situ study of the thermal stability of supported Pt nanoparticles and their stabilization via atomic layer deposition overcoating

Downscaling of supported Pt structures to the nanoscale is motivated by the augmentation of the catalytic activity and selectivity, which depend on the particle size, shape and coverage. Harsh thermal and chemical conditions generally required for catalytic applications entail an undesirable particle coarsening, and consequently limit the catalyst lifetime. Herein we report an in situ synchrotron study on the stability of supported Pt nanoparticles and their stabilization using atomic layer deposition (ALD) as the stabilizing methodology against particle coarsening. Pt nanoparticles were thermally annealed up to 850 °C in an oxidizing environment while recording in situ synchrotron grazing incidence small angle X-ray scattering (GISAXS) 2D patterns, thereby obtaining continuous information about the particle radius evolution. Al2O3 overcoat as a protective capping layer against coarsening via ALD was investigated. In situ data proved that only 1 cycle of Al2O3 ALD caused an augmentation of the onset temperature for particle coarsening. Moreover, the results showed a dependence of the required overcoat thickness on the initial particle size and distribution, being more efficient (i.e. requiring lower thicknesses) when isolated particles are present on the sample surface. The Pt surface accessibility, which is decisive in catalytic applications, was analyzed using the low energy ion scattering (LEIS) technique, revealing a larger Pt surface accessibility for a sample with Al2O3 overcoat than for a sample without a protective layer after a long-term isothermal annealing.

The co-reactant role during plasma enhanced atomic layer deposition of palladium

Atomic layer deposition (ALD) of noble metals is an attractive technology potentially applied in nanoelectronics and catalysis. Unlike the combustion-like mechanism shown by other noble metal ALD processes, the main palladium (Pd) ALD process using palladium(ii)hexafluoroacetylacetonate [Pd(hfac)2] as precursor is based on true reducing surface chemistry. In this work, a thorough investigation of plasma-enhanced Pd ALD is carried out by employing this precursor with different plasmas (H2*, NH3*, O2*) and plasma sequences (H2* + O2*, O2* + H2*) as co-reactants at varying temperatures, providing insights in the co-reactant and temperature dependence of the Pd growth per cycle (GPC). At all temperatures, films grown with only reducing co-reactants contain a large amount of carbon, while an additional O2* in the co-reactant sequence helps to obtain Pd films with much lower impurity concentrations. Remarkably, in situ XRD and SEM show an abrupt release of the carbon impurities during annealing at moderate temperatures in different atmospheres. In vacuo XPS measurements reveal the remaining species on the as-deposited surface after every exposure. Links are established between the particular surface termination prior to the precursor pulse and the observed differences in GPC, highlighting hydrogen as the key growth facilitator and carbon and oxygen as growth inhibitors. The increase in GPC with temperature for ALD sequences with H2* or NH3* prior to the precursor pulse is explained by an increase in the amount of hydrogen species that reside on the Pd surface which are available for reaction with the Pd(hfac)2 precursor.

Surface mobility and impact of precursor dosing during atomic layer deposition of platinum:in situmonitoring of nucleation and island growth

The nucleation rate and diffusion-driven growth of Pt nanoparticles are revealed within situX-ray fluorescence and scattering measurements during ALD: the particle morphology at a certain Pt loading is similar for high and low precursor exposures.

Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy

By the powerful combination of in situ FTIR and in vacuo XPS, the surface species during ALD of TDMAT with different reactants could be identified.

Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature

A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me₃Au(PMe₃) precursor with H₂ plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the precursor and reactant exposure. X-ray photoelectron spectroscopy measurements show that the gold films deposited at 120 °C are of higher purity than the previously reported ones (<1 at. % carbon and oxygen impurities and <0.1 at. % phosphorous). A low resistivity value was obtained (5.9 ± 0.3 μΩ cm), and X-ray diffraction measurements confirm that films deposited at 50 and 120 °C are polycrystalline. The process forms gold nanoparticles on oxide surfaces, which coalesce into wormlike nanostructures during deposition. Nanostructures grown at 120 °C are evaluated as substrates for free-space surface-enhanced Raman spectroscopy (SERS) and exhibit an excellent enhancement factor that is without optimization, only one order of magnitude weaker than state-of-the-art gold nanodome substrates. The reported gold PE-ALD process therefore offers a deposition method to create SERS substrates that are template-free and does not require lithography. Using this process, it is possible to deposit nanostructured gold layers at low temperatures on complex three-dimensional (3D) substrates, opening up opportunities for the application of gold ALD in flexible electronics, heterogeneous catalysis, or the preparation of 3D SERS substrates.

Bifunctional earth-abundant phosphate/phosphide catalysts prepared via atomic layer deposition for electrocatalytic water splitting

The development of active and stable earth-abundant catalysts for hydrogen and oxygen evolution is one of the requirements for successful production of solar fuels. Atomic Layer Deposition (ALD) is a proven technique for conformal coating of structured (photo)electrode surfaces with such electrocatalyst materials. Here, we show that ALD can be used for the deposition of iron and cobalt phosphate electrocatalysts. A PE-ALD process was developed to obtain cobalt phosphate films without the need for a phosphidation step. The cobalt phosphate material acts as a bifunctional catalyst, able to also perform hydrogen evolution after either a thermal or electrochemical reduction step.

Correction: Key role of surface oxidation and reduction processes in the coarsening of Pt nanoparticles

Correction for 'Key role of surface oxidation and reduction processes in the coarsening of Pt nanoparticles' by Eduardo Solano et al., Nanoscale, 2017, 9, 13159-13170.

Key role of surface oxidation and reduction processes in the coarsening of Pt nanoparticles

Particle coarsening is the main cause for thermal deactivation and lifetime reduction of supported Pt nanocatalysts. Here, Atomic Layer Deposition (ALD) was used to prepare a model system of Pt nanoparticles with high control over the metal loading and the nanoparticle size and coverage. A series of samples with distinct as-deposited size and interparticle spacing was annealed under different oxygen environments while Grazing Incidence Small Angle X-ray Scattering (GISAXS) was employed as in situ tool for monitoring the change in average nanoparticle size. The obtained results revealed three morphological stages during the thermal treatment, which can be explained by (I) the formation of a PtO₂ shell on stable Pt nanoparticles at low temperature (below 300 °C), (II) the reduction of the PtO₂ shell at moderate temperature (300 to 600 °C), creating mobile species that trigger particle coarsening until a steady morphological state is reached, and (III) the evaporation of PtO₂ at high temperature (above 650 °C), causing particle instability and coarsening reactivation. The onset temperatures for stages (II) and (III) were found to depend on the initial particle size and spacing as well as on the O₂ partial pressure during annealing, and could be summarized in a morphological stability diagram for Pt nanoparticles. The coarsening model indicates an important role for the reduction of the PtO₂ shell in inducing particle coarsening. The key role of the reduction process was corroborated through isothermal experiments under decreasing O₂ partial pressure and through forced reduction experiments near room temperature via H₂ exposure.

Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO₄ (ToRuS™, Air Liquide) and H₂ or H₂ plasma, providing insights in the nucleation behavior of these processes.

Atomic Layer Deposition Route To Tailor Nanoalloys of Noble and Non-noble Metals

Since their early discovery, bimetallic nanoparticles have revolutionized various fields, including nanomagnetism and optics as well as heterogeneous catalysis. Knowledge buildup in the past decades has witnessed that the nanoparticle size and composition strongly impact the nanoparticle's properties and performance. Yet, conventional synthesis strategies lack proper control over the nanoparticle morphology and composition. Recently, atomically precise synthesis of bimetallic nanoparticles has been achieved by atomic layer deposition (ALD), alleviating particle size and compositional nonuniformities. However, this bimetal ALD strategy applies to noble metals only, a small niche within the extensive class of bimetallic alloys. We report an ALD-based approach for the tailored synthesis of bimetallic nanoparticles containing both noble and non-noble metals, here exemplified for Pt-In. First, a Pt/In2O3 bilayer is deposited by ALD, yielding precisely defined Pt-In nanoparticles after high-temperature H2 reduction. The nanoparticles' In content can be accurately controlled over the whole compositional range, and the particle size can be tuned from micrometers down to the nanometer scale. The size and compositional flexibility provided by this ALD-approach will trigger the fabrication of fully tailored bimetallic nanomaterials, including superior nanocatalysts.

Study of amorphous Cu–Te–Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices

Silicon alloying of Cu_0.6Te_0.4 results in an amorphous material up to temperatures exceeding 400 °C with a smooth surface morphology, making it compatible with typical device processing temperatures.