Synthesis of Nanocrystalline Reduced Graphene Oxide Quantum Dots

Reduced graphene oxide quantum dots (rGOQDTs) play a vital role in a variety of biological, optoelectronics, and environmental applications. The quality of 0D nanodots is compromised when they are cut from big 2D nanosheets. As a result, it is necessary to maintain a balance between quality and yield. Here, we developed a two-step hydrothermal process for producing nanocrystalline rGOQDTs by employing graphene oxide (GO) as an initial precursor. UV-Visible spectroscopy was used to explore the optical properties of rGOQDTs. XRD, Raman, and FTIR spectroscopic experiments were performed to better understand the crystalline and chemical properties and composition of rGOQDTs. The nanocrystalline rGOQDTs have an average crystallite size of 1.67[Formula: see text]nm. Using GO as an initial precursor implies a simple two-step approach for producing nanocrystalline rGOQDTs in a low-cost, highly efficient, and scalable manner.

Two-dimensional graphitic carbon nitride nanosheets: a novel platform for flexible, robust and optically active triboelectric nanogenerators

We report on the characteristics of mechanically flexible, stable and photoactive triboelectric nanogenerators based on two-dimensional graphitic carbon nitride (g-C₃N₄) nanosheets. The performance of nanogenerator devices has been studied with varying frictional surfaces (such as polypropylene, aluminium oxide, Teflon and polyethylene terephthalate). Energy band diagrams have been used to explain the mechanism of triboelectric charge transfer in pristine and doped g-C₃N₄, with the former showing better characteristics. An optimized device has been found to be responsive to external stimuli to generate an output voltage of 10 V upon simple biomechanical impulses. To demonstrate the efficacy for practical applications of g-C₃N₄-based triboelectric nanogenerators, output voltages have been recorded for different common activities like walking, water showering, using as a writing/drawing pad, etc. Repetitive finger tapping on a device could charge a capacitor to as high as 55 V within ∼50 s, while that under UV illumination is found to be much faster (∼14 s) due to photoinduced carrier generations in g-C₃N₄. The exhibition of a superior photoresponsivity of ∼117 V W^-1 under UV illumination demonstrates the dual functionality of g-C₃N₄-based triboelectric devices as a nanogenerator as well as an active flexible photosensor, which is hitherto unreported. Excellent mechanical flexibility, stability and photoinduced enhancement of output characteristics make g-C₃N₄ an attractive candidate for nanogenerator devices for future applications.

Self-powered flexible photodetectors based on Ag nanoparticle-loaded g-C3N4 nanosheets and PVDF hybrids: role of plasmonic and piezoelectric effects

Here we demonstrate novel self-powered photodetection using silver (Ag) nanoparticle-loaded two-dimensional graphitic carbon nitride (g-C₃N₄) nanosheets triggered by poly-vinylidene fluoride (PVDF)-based flexible piezoelectric nanogenerators. A self-poled PVDF-based nanogenerator has been obtained upon exploiting pristine g-C₃N₄ nanosheets as a filler material within the PVDF matrix. The fabricated nanogenerator devices are found to be highly efficient in generating the maximum voltage of ∼2.3 V and maximum power ∼110 μWatt/cm², upon finger tapping. Further, the integration of an additional layer of plasmonic Ag nanoparticle-loaded g-C₃N₄ nanosheets, has led to a significant enhancement of photoresponse. The hybrid plasmonic nanogenerator (with a strain of ∼0.021%) has resulted in self-powered photodetection with a photo-to-dark current ratio of ∼60, as compared to the unstrained device (∼2.0). In contrast to the usual behaviour (positive photoresponse), the exposure of an ultraviolet light lowers the output current indicating a negative photoresponse reported for the first time in such a system. The origin of such negative photoresponse has been attributed to the screening of piezopotential of PVDF by photogenerated carriers of g-C₃N₄ nanosheets. On the other hand, visible light-induced positive photoresponse has originated from the increment in the current, indicating the useful role of Ag nanoparticles in plasmon-induced hot electron transfer process.

Selective photoresponse of plasmonic silver nanoparticle decorated Bi2Se3 nanosheets

The plasmon-enhanced photoresponse properties of a Ag nanoparticle decorated Bi₂Se₃ nanosheet (AGBS)/p-Si heterojunction device have been studied. The Ag nanoparticles, Bi₂Se₃ nanosheets, and AGBS nanocomposite are synthesized chemically. Microscopic investigations, ultimately of the AGBS nanocomposite, reveal that the Bi₂Se₃ nanosheets of thickness ∼20 nm and lateral dimension ∼1 μm are decorated with Ag nanoparticles of sizes 20-40 nm in the nanocomposite. The x-ray diffraction pattern of AGBS shows that apart from being in a metallic state, the Ag in the AGBS is also in the form of compounds with Bi, Se, and additionally O. This observation is further complemented by the x-ray photoelectron spectrum, which shows the presence of Ag⁰ and Ag⁺ states of Ag in AGBS. The UV-visible absorption spectra show the plasmonic peak of the Ag nanoparticles occurs at 420 nm; the peak is shifted to ∼500 nm in AGBS due to the modified dielectric environment of the nanoparticles. The AGBS/p-Si heterojunction shows excellent photoresponse properties, with a responsivity of 0.28 A/W, a fairly high detectivity of 4 × 10¹⁰ Jones, and an EQE of 71% under 10 V reverse bias at a 500 nm wavelength. The plasmon enhanced photoresponse at the selective wavelength makes this material attractive for high performance optoelectronic devices.

Infrared tunable, two colour-band photodetectors on flexible platforms using 0D/2D PbS-MoS2 hybrids

Two-dimensional (2D) MoS₂ nanosheets have been integrated with zero-dimensional (0D) PbS quantum dots to achieve a superior optical response extending to the short-wavelength infrared region along with a broadband visible response for multispectral photodetection. The 0D/2D hybrid nanostructures have been synthesized by a one pot, stabilizer-free solvothermal growth process. Microscopic and spectroscopic studies confirmed the formation of PbS QD decorated semiconducting 2H-MoS₂ layers. The size tunable absorption features with longer photo-generated carrier lifetime of synthesized hybrid nanostructures indicate that the integration of PbS QDs in MoS₂ could be a viable approach for fabricating two-colour band photodetectors, viz. visible broadband and wavelength selective short-wave IR photodetectors. Devices have also been demonstrated on polyethylene terephthalate substrates using a solution-based synthesis technique for flexible and ultrathin optoelectronic device applications. The photodetection performance of fabricated devices suggests that the synergic 0D/2D hybrid nanostructures are significantly superior to solution processed hybrid devices operating in the infrared region. The successful integration of 0D QDs in 2D materials may pave the way for novel, high performance, next-generation CMOS compatible flexible photonic devices.

An Innovative Root Inoculation Method to Study Ralstonia solanacearum Pathogenicity in Tomato Seedlings

In this study, we report Ralstonia solanacearum pathogenicity in the early stages of tomato seedlings by an innovative root inoculation method. Pathogenicity assays were performed under gnotobiotic conditions in microfuge tubes by employing only 6- to 7-day-old tomato seedlings for root inoculation. Tomato seedlings inoculated by this method exhibited the wilted symptom within 48 h and the virulence assay can be completed in 2 weeks. Colonization of the wilted seedlings by R. solanacearum was confirmed by using gus staining as well as fluorescence microscopy. Using this method, mutants in different virulence genes such as hrpB, phcA, and pilT could be clearly distinguished from wild-type R. solanacearum. The method described here is economic in terms of space, labor, and cost as well as the required quantity of bacterial inoculum. Thus, the newly developed assay is an easy and useful approach for investigating virulence functions of the pathogen at the seedling stage of hosts, and infection under these conditions appears to require pathogenicity mechanisms used by the pathogen for infection of adult plants.

Synergistic effect of polymer encapsulated silver nanoparticle doped WS2 sheets for plasmon enhanced 2D/3D heterojunction photodetectors

Chemical doping and plasmonic enhanced photoresponsivity of two dimensional (2D) n-WS₂/p-Si heterojunctions are demonstrated for the first time. Novel PVP coated Ag⁰ intercalation induced synthesis has led to the formation of impurity-free, chemically doped few-layer n-WS₂ with reversed conductivity following the Maxwell-Wagner-Sillars interfacial effect. The resultant composite film exhibits excellent stability and tunable plasmonic absorption due to silver nanoparticles of different sizes. A sharp band-edge absorption of the hybrid material indicates the presence of spin-orbit coupled direct band gap transitions in WS₂ layers, in addition to a broader plasmonic peak attributed to Ag nanoparticles. Stabilized Ag-nanoparticle (∼4-6 nm) embedded electron rich n-WS₂ has been used to fabricate plasmon enhanced, silicon compatible heterojunction photodetectors. The detectors exhibited superior properties, possessing a photo-to-dark current ratio of ∼10³, a very high responsivity (8.0 A W^-1) and an EQE of 2000% under 10 V bias with a broad spectral photoresponse in the wavelength range of 400-1100 nm. The results provide a new paradigm for intercalant impurity-free metal nanoparticle assisted exfoliation of n-type few-layer WS₂, with the nanoparticles playing a dual role towards the realization of 2D materials based broadband heterojunction optoelectronic devices by inducing chemical doping as well as tunable plasmon enhanced absorption.

Emission characteristics of self-assembled strained Ge1-xSnx islands for sources in the optical communication region

Self-assembled strained Ge_1-x Sn _x islands on Si (100) have been grown at a low temperature using molecular beam epitaxy. The in-built strain and fraction of Sn in the islands have been estimated using x-ray photoelectron spectroscopy and high resolution x-ray diffraction study of grown samples. No-phonon assisted transition in the optical communication wavelength range of 1.4-1.8 μm has been observed in the Ge_1-x Sn _x island samples. The direct band gap transition intensity is found to increase with a growth in Sn concentration, with this increase in intensity sustained up to a temperature of 130 K in Ge_1-x Sn _x islands. The observed electroluminescence in p-i-n devices fabricated on Ge_1-x Sn _x island samples above a threshold bias of 4 V makes them attractive for future Si based optical devices.

Efficacy of Prophylactic use of Ciprofloxacin and Metronidazole in Mild and Moderately Severe Acute Pancreatitis

INTRODUCTION

There are new concepts and developments in the diagnosis and management of acute pancreatitis. Current evidence suggests that there is no role of prophylactic antibiotics use in acute pancreatitis. However, it is still a common practice to administer prophylactic antibiotics in a country like Nepal. So, we have conducted a study in mild and moderately severe acute pancreatitis to study the efficacy of prophylactic antibiotics.

METHODS

A case control study was conducted among 76 patients comparing efficacy of prophylactic antibiotics versus no antibiotics in patients with mild and moderately severe acute pancreatitis.

RESULTS

The two most common etiology of acute pancreatitis in AG and NAG were alcohol 21 (55.2%) vs. 24 (63.1%) and biliary 10 (26.3%) vs. 4 (10.5%) respectively. Pancreatic necrosis was seen in five (13.1 %) in AG and four (10.5%) in NAG. Four (10.5%) developed extra pancreatic complications in AG and five (13.1%) in NAG. There was one (2.6%) death in AG and no death in NAG. Abdominal pain improvement seen in AG vs. NAG was 3.2 days vs. 2.4 days (P=0.002). The hospital stay was 7.7±2.23 days in AG and 7.5±1.85 days in NAG (P=0.65).

CONCLUSIONS

The routine use of prophylactic antibiotics for mild and moderately severe acute pancreatitis is not associated with improvement in meaningful clinical outcomes.

Solution-processed, hybrid 2D/3D MoS2/Si heterostructures with superior junction characteristics

We report a theoretical and experimental investigation of the hybrid heterostructure interfaces between atomically thin MoS₂ nanocrystals (NCs) on Si platform for their potential applications towards next-generation electrical and optical devices. Mie theory-based numerical analysis and COMSOL simulations based on the finite element method have been utilized to study the optical absorption characteristics and light-matter interactions in variable-sized MoS₂ NCs. The size-dependent absorption characteristics and the enhancement of electric field of the heterojunction in the UV-visible spectral range agree well with the experimental results. A lithography-free, wafer-scale, 2D material on a 3D substrate hybrid vertical heterostructure has been fabricated using colloidal n-MoS₂ NCs on p-Si. The fabricated p-n heterojunction exhibited excellent junction characteristics with a high rectification ratio suitable for voltage clipper and rectifier applications. The current-voltage characteristics of the devices under illumination have been performed in the temperature range of 10-300 K. The device exhibits a high photo-to-dark current ratio of ∼3 × 10³ and a responsivity comparable to a commercial Si photodetector. The excellent heterojunction characteristics demonstrate the great potential of MoS₂ NC-based hybrid electronic and optoelectronic devices in the near future.

Hybrid opto-chemical doping in Ag nanoparticle-decorated monolayer graphene grown by chemical vapor deposition probed by Raman spectroscopy

The novel opto-chemical doping effect in Ag nanoparticle-decorated monolayer graphene grown by chemical vapor deposition has been investigated using Raman spectroscopy for the first time. We used both noble metal nanoparticles and optical excitation, in a hybrid opto-chemical route, to tune the doping level in graphene. Metal nanoparticle-induced chemical effects and laser power-induced substrate effects alter the doping nature of graphene from p- to n-type. Compared with earlier studies, the proposed method significantly lowers the laser intensity required for optical power-dependent doping, resulting in prevention of damage to the sample due to local heating. Some other interesting observations are the enhanced peak intensity in the Raman spectrum of graphene, enhancement of the D-band intensity and the introduction of G-band splitting. This novel, cheap and easily implemented hybrid optical-chemical doping strategy could be very useful for tuning graphene plasmons on the widely used Si/SiO₂ substrates for various photonic device applications.

White-light emission by phonon assisted coherent mixing of excitons in Au8-CdS hybrid nanorods

Gold cluster (Au₈) coated CdS hybrid nanorods (HNRs), synthesized using a sonication assisted assembly route, exhibit phonon assisted coherent mixing of excitons. As observed from optical absorption, Raman scattering, x-ray diffraction and transmission electron microscopic studies, the Au₈ modulates the crystal-and electronic-structure of the CdS nanorods, effecting enhancement of exciton-phonon (e-p) interactions. The e-p interaction and entropy effect mediated phase matching of the excitonic transitions, leading-via cooperative and coherent mixing of the excitons' color-to the emission of white light, has been confirmed from room temperature and time resolved photoluminescence measurements.

Mask-less deposition of Au-SnO2 nanocomposites on CMOS MEMS platform for ethanol detection

Here we report on the mask-less deposition of Au-SnO2 nanocomposites with a silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) micro electro mechanical system (MEMS) platform through the use of dip pen nanolithography (DPN) to create a low-cost ethanol sensor. MEMS technology is used in order to achieve low power consumption, by the employment of a membrane structure formed using deep reactive ion etching technique. The device consists of an embedded tungsten micro-heater with gold interdigitated electrodes on top of the SOI membrane. The tungsten micro-heater is used to raise the membrane temperature up to its operating temperature and the electrodes are used to measure the resistance of the nanocomposite sensing layer. The CMOS MEMS devices have high electro-thermal efficiency, with 8.2 °C temperature increase per mW power of consumption. The sensing material (Au-SnO2 nanocomposite) was synthesised starting from SnO nanoplates, then Au nanoparticles were attached chemically to the surface of SnO nanoplates, finally the mixture was heated at 700 °C in an oven in air for 4 h. This composite material was sonicated for 2 h in terpineol to make a viscous homogeneous slurry and then 'written' directly across the electrode area using the DPN technique without any mask. The devices were characterised by exposure to ethanol vapour in humid air in the concentration range of 100-1000 ppm. The sensitivity varied from 1.2 to 0.27 ppm(-1) for 100-1000 ppm of ethanol at 10% relative humid air. Selectivity measurements showed that the sensors were selective towards ethanol when they were exposed to acetone and toluene.

CMOS integration of inkjet-printed graphene for humidity sensing

We report on the integration of inkjet-printed graphene with a CMOS micro-electro-mechanical-system (MEMS) microhotplate for humidity sensing. The graphene ink is produced via ultrasonic assisted liquid phase exfoliation in isopropyl alcohol (IPA) using polyvinyl pyrrolidone (PVP) polymer as the stabilizer. We formulate inks with different graphene concentrations, which are then deposited through inkjet printing over predefined interdigitated gold electrodes on a CMOS microhotplate. The graphene flakes form a percolating network to render the resultant graphene-PVP thin film conductive, which varies in presence of humidity due to swelling of the hygroscopic PVP host. When the sensors are exposed to relative humidity ranging from 10-80%, we observe significant changes in resistance with increasing sensitivity from the amount of graphene in the inks. Our sensors show excellent repeatability and stability, over a period of several weeks. The location specific deposition of functional graphene ink onto a low cost CMOS platform has the potential for high volume, economic manufacturing and application as a new generation of miniature, low power humidity sensors for the internet of things.

Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions

Photo-physical processes in Er-doped silica glass matrix containing Ge nanocrystals prepared by the sol-gel method are presented in this article. Strong photoluminescence at 1.54 μm, important for fiber optics telecommunication systems, is observed from the different sol-gel derived glasses at room temperature. We demonstrate that Ge nanocrystals act as strong sensitizers for Er(3+) ions emission and the effective Er excitation cross section increases by almost four orders of magnitude with respect to the one without Ge nanocrystals. Rate equations are considered to demonstrate the sensitization of erbium luminescence by Ge nanocrystals. Analyzing the erbium effective excitation cross section, extracted from the flux dependent rise and decay times, a Dexter type of short range energy transfer from a Ge nanocrystal to erbium ion is established.

Diffusion kinetics and evolution of self-assembled nickel germanide nanorings on germanised Si (100)

Self assembled binary nickel germanide nanorings are formed by annealing of a Ni/Ge/Si (100) film.

Dip pen nanolithography-deposited zinc oxide nanorods on a CMOS MEMS platform for ethanol sensing

Zinc oxide nanorods integration with CMOS MEMS substrate using dip pen nanolithography for low cost, low power ethanol sensor development.

Tunable optical properties of graphene oxide by tailoring the oxygen functionalities using infrared irradiation

The modification of individual oxygen functional groups and the resultant optical properties of a graphene oxide suspension were investigated using a controlled photothermal reduction by infrared irradiation. The evolution of the structural and optical characteristics of GO suspensions was obtained from Raman spectra, x-ray photoelectron spectroscopy, optical absorption, and steady state and time-resolved photoluminescence spectroscopy. The results suggest the gradual restoration of sp(2) clusters within the sp(3) matrix with an increase of the reduction time and power density. The yellow-red emission (∼610 nm) originated from the defect-assisted localized states in GO due to epoxy/hydroxyl (C-O/-OH) functional groups and that of the blue emission (∼500 nm) was ascribed to the carbonyl (C=O)-assisted localized electronic states. With an increase in the reduction time and IR power density, the intensity of the yellow-red emission was found to decrease, with the blue emission being prominent. These experimental findings open up a new dimension for controlling the optical absorption and emission properties of graphene oxide by tailoring the oxygen functional groups, which may lead to the potential application of graphene-based optoelectronic devices.

Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

We report the fabrication and optical response of boron-doped single silicon nanowire-based metal-semiconductor-metal photodetector. Typical single nanowire devices with diameter of ∼80-100 nm and electrode spacing of ∼1 μm were made using electron-beam lithography from nanowires, grown by a metal-assisted chemical etching process. A high responsivity, of the order of 10(4) A W(-1), was observed even at zero bias in a single nanowire photodetector with peak responsivity in the near-infrared region. The responsivity was found to increase with increasing bias and decreasing nanowire diameter. Finite element based optical simulation was proposed to explain the diameter dependent performance of a single nanowire. The observed photoresponse is sensitive to the polarization of exciting light source, allowing the device to act as a polarization-dependent near-infrared photodetector.

MiR-7-1 potentiated estrogen receptor agonists for functional neuroprotection in VSC4.1 motoneurons

Protection of motoneurons is an important goal in the treatment of spinal cord injury (SCI). We tested whether neuroprotective microRNAs (miRs) like miR-206, miR-17, miR-21, miR-7-1, and miR-106a could enhance efficacy of estrogen receptor (ER) agonists such as 1,3,5-tris (4-hydroxyphenyl)-4-propyl-1H-pyrazole (PPT, ERα agonist), Way200070 (WAY, ERβ agonist), and estrogen (EST, ERα and ERβ agonist) in preventing apoptosis in the calcium ionophore (CI)-insulted ventral spinal cord 4.1 (VSC4.1) motoneurons. We determined that 200 nM CI induced 70% cell death. Treatment with 50 nM PPT, 100 nM WAY, and 150 nM EST induced overexpression of ERα, ERβ, and both receptors, respectively, at mRNA and protein levels. Treatment with ER agonists significantly upregulated miR-206, miR-17, and miR-7-1 in the CI-insulted VSC4.1 motoneurons. Transfection with miR-206, miR-17, or miR-7-1 mimic potentiated WAY or EST to inhibit apoptosis in the CI-insulted VSC4.1 motoneurons. Overexpression of miR-7-1 maximally increased efficacy of WAY and EST for down regulation of pro-apoptotic Bax and upregulation of anti-apoptotic Bcl-2. A search using microRNA database (miRDB) indicated that miR-7-1 could inhibit the expression of L-type Ca(2+) channel protein alpha 1C (CPα1C). miR-7-1 overexpression and WAY or EST treatment down regulated CPα1C but upregulated p-Akt to trigger cell survival signaling. The same therapeutic strategy increased expression of the Ca(2+)/calmodulin-dependent protein kinase II beta (CaMKIIβ) and the phosphorylated cAMP response element binding protein (p-CREB) so as to promote Bcl-2 transcription. Whole cell membrane potential and mitochondrial membrane potential studies indicated that miR-7-1 highly potentiated EST to preserve functionality in the CI-insulted VSC4.1 motoneurons. In conclusion, our data indicated that miR-7-1 most significantly potentiated efficacy of EST for functional neuroprotection and this therapeutic strategy could be used in the future to attenuate apoptosis of motoneurons in SCI.

MBE-grown Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance-voltage and conductance-voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si(1-x)Ge(x) quantum dots show better memory characteristics than single-layer Si quantum dots.

Defects in 6 MeV H+ irradiated hydrothermal ZnO single crystal

The effect of 6 MeV H(+) irradiation on hydrothermally grown ZnO single crystal has been investigated using high resolution x-ray diffraction (HRXRD) and optical absorption (ultraviolet-visible) spectroscopy. The increase of the diffuse scattering in the reciprocal space maps measured using HRXRD indicates an increase of the point defect density upon irradiation. Within the penetration depth of x-rays of several micrometres, the defect density increased with increasing distance from the sample surface. On the other hand, the near band gap optical absorption became sharper for the irradiated crystal. This reflects enhanced band to band absorption and reduced sub-band gap absorption due to defects. Temperature dependent photoluminescence spectra of the pristine sample show negative thermal quenching (NTQ) of the luminescence which is due to the presence of two or more donor related defects. Upon irradiation, a single dominant donor bound transition can be found without any temperature induced NTQ. Enhancement of the band edge luminescence and reduction of the defect related luminescence is observed at 10 K. Such changes have been discussed in the light of the hydrogen present in the as-grown state of hydrothermal ZnO.

Nanostructures of Sr2+ doped BiFeO3 multifunctional ceramics with tunable photoluminescence and magnetic properties

Careful tuning of formation (calcination) temperature of Sr(2+) doped BiFeO(3) multiferroic ceramics results in tailorable particle morphologies ranging from spherical to pillar-like. Based on the minimization of Gibb's free energy approach, the dominant homogeneous mechanism for particle growth is suggested. The chemical substitution of a trivalent ion (Bi(3+)) by a divalent ion (Sr(2+)) causes the transformation of certain fraction of Fe(3+) to Fe(4+) and/or the appearance of oxygen vacancies. This has been respectively proved by the analysis of XPS and refinement of neutron diffraction data. Although significant modification in the particle morphology is observed, the crystal unit cell remains rhombohedral with a R3c space group but interesting variations in physical properties are achieved. O-vacancies induced strong and sharp photoluminescence activity in the IR region, similar to ZnO, is reported for the first time. This observation opens up a new application for multiferroic ceramics. SQUID M-H data confirms the straightening of the canted spin structure of BiFeO(3), which in turn results in magnetism similar to ferromagnetic materials. Findings of the magneto-dielectric effect are also discussed to claim the multiferroic nature of the sample.

Photoluminescence and positron annihilation spectroscopic investigation on a H(+) irradiated ZnO single crystal

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10(17) cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

Hippocampal tissue of patients with refractory temporal lobe epilepsy is associated with astrocyte activation, inflammation, and altered expression of channels and receptors

Temporal lobe epilepsy (TLE) is the most common form of focal epilepsy. Previous research has demonstrated several trends in human tissue that, undoubtedly, contribute to the development and progression of TLE. In this study we examined resected human hippocampus tissue for a variety of changes including gliosis that might contribute to the development and presentation of TLE. The study subjects consisted of six TLE patients and three sudden-death controls. Clinicopathological characteristics were evaluated by H&E staining. Immunohistological staining and Western blotting methods were used to analyze the samples. Neuronal hypertrophy was observed in resected epileptic tissue. Immunohistological staining demonstrated that activation of astrocytes was significantly increased in epileptic tissue as compared to corresponding regions of the control group. The Western blot data also showed increased CX43 and AQP4 in the hippocampus and downregulation of Kir4.1, α-syntrophin, and dystrophin, the key constituents of AQP4 multi-molecular complex. These tissues also demonstrated changes in inflammatory factors (COX-2, TGF-β, NF-κB) suggesting that these molecules may play an important role in TLE pathogenesis. In addition we detected increases in metabotropic glutamate receptor (mGluR) 2/3, mGluR5 and kainic acid receptor subunits KA1 (Grik4) and KA2 (Grik5) in patients' hippocampi. We noted increased expression of the α1c subunit comprising class C L-type Ca(2+) channels and calpain expression in these tissues, suggesting that these subunits might have an integral role in TLE pathogenesis. These changes found in the resected tissue suggest that they may contribute to TLE and that the kainic acid receptor (KAR) and deregulation of GluR2 receptor may play an important role in TLE development and disease course. This study identifies alterations in number of commonly studied molecular targets associated with astrogliosis, cellular hypertrophy, water homeostasis, inflammation, and modulation of excitatory neurotransmission in hippocampal tissues from TLE patients.

Photophysics of resonantly and non-resonantly excited erbium doped Ge nanowires

We have fabricated Er doped germanium nanowires of different diameters by pulsed laser deposition and chemical methods. Er induced photoluminescence emission due to the intra-4f (4)I(13/2)→(4)I(15/2) transition of Er energy levels at 1.53 µm has been achieved at room temperature using both resonant (980 nm) and non-resonant (325 nm) excitation of Er ions. The observed 1.53 µm photoluminescence signal upon non-resonant 325 nm excitation is attributed to the Ge related oxygen deficiency centers surrounding the Ge core. For direct excitation, the infrared photoluminescence characteristics have been studied as a function of Er concentration, photon flux, and diameter of the nanowires. The Er related emission signal is found to be enhanced with increase in Er concentration, pump flux of 980 nm, and the nanowire diameter. The time resolved characteristics of the Er induced emission peak have been studied as a function of the pump flux as well as the diameter of the Ge nanowires.

Optical and bio-sensing characteristics of ZnO nanotubes grown by hydrothermal method

ZnO nanostructures were fabricated on copper substrates by hydrothermal method at an optimized growth temperature of -95 degrees C. Structural properties were investigated by field emission scanning electron and transmission electron microscopy. Distinct morphologies were found to be formed at different growth times. The formation of nanotubes mainly involved the initial nucleation followed by the growth of nanorods at 95 degrees C, and then with the increase of dissolution time at room temperature, the preferential chemical dissolution of the metastable Zn-rich [0001] polar surfaces resulted in removing the atoms from the surfaces, thus leading to the thinning of the wall of the nanostructures. Completely hollow ZnO nanotubes could be obtained at a high dissolution time. The room temperature photoluminescence and optical absorption properties of ZnO nanotubes have been studied as a function of dissolution time. The efficacy of ZnO nanotubes for glucose sensing applications has been studied.

Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 ± 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of ~154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

Silicon dioxide embedded germanium nanocrystals grown using molecular beam epitaxy for floating gate memory devices

SiO2/Ge nanocrystals/SiO2 trilayer memory structure has been fabricated by oxidizing and subsequent annealing of self assembled SiGe nanoislands grown by molecular beam epitaxy. The optical and charge storage characteristics of trilayer structures have been studied through Raman spectroscopy and capacitance-voltage measurements, respectively. An anti-clockwise hysteresis in the C-V characteristics indicated the net electron trapping in the floating gate containing Ge nanocrystals. Frequency dependent measurements of device characteristics indicate that neither interface defects nor deep traps are dominant for the charging or discharging processes of nanocrystal floating gates.

Hand washing practices in urban and rural communities in and around Kolkata, West Bengal

BACKGROUND

Public health importance of hand washing was known since 19th century. Many researchers also highlighted how hand washing could bring down the incidence of diarrhea, ARI & other diseases.

OBJECTIVE

To find out the extent of hand washing as practiced by the community, to what extent suggested steps of hand washing was followed and to assess the changes in bacteriological count of hand before and after hand washing.

METHOD

A community based cross sectional study was carried out during January-February 2007 among 161 respondents in and around Kolkata through interview, observation of hand washing in some situations as well as carrying out microbiological test.

RESULT

100% respondents interviewed practiced hand washing after defecation either with soap (59%) or with plain water, ash & mud (41%). But 64%, 51.6% and only 21.7% practiced hand washing before preparation of food; after using urinals; after changing the babies' nappies and disposing their feces respectively. Only 16.1% respondents washed their hands as per the recommended time of 15-30 seconds. Majority (75%) dried hands with apparently unclean materials. 90.7% followed step1 but none followed all the steps. Swab collection before and after hand washing revealed a decrease in colony count in 60% of the samples.

CONCLUSION

It can be concluded that extent of desirable practices regarding hand washing is still lacking and needs to be emphasized.

Shape and size distribution of molecular beam epitaxy grown self-assembled Ge islands on Si (001) substrates

We have performed a series of annealing experiments with Ge islands on Si (001) grown by molecular beam epitaxy, in order to clarify issues related to island stability and coarsening. The shape and size distribution of nanoislands as a function of annealing time at a temperature of 650 degrees C have been studied. Optical phonons from Raman spectra have been used as efficient probes to study the evolution of Si(1-x)Ge(x) islands. Both the alloy composition and residual strain in the islands have been determined from the phonon frequencies and Raman intensities. The experimental results are in good agreement with the strain relaxation estimated using X-ray rocking curves. The results indicate that the shape and size distribution of Ge islands are controlled via structural and compositional changes through strain relaxation by the periodic creation and extinction of tiny nanocrystals.