Optimized Doping of Diffusion Blocking Layers and Their Impact on the Performance of Perovskite Photovoltaics

The roll-to-roll printing production process for hybrid organic-inorganic perovskite solar cells (PSCs) demands thick and high-performance solution-based diffusion blocking layers. Inverted (p-i-n) PSCs usually incorporate solution-processed PC70BM as the electron-transporting layer (ETL), which offers good electron charge extraction and passivation of the perovskite active layer grain boundaries. Thick fullerene diffusion blocking layers could benefit the long-term lifetime performance of inverted PSCs. However, the low conductivity of PC70BM significantly limits the thickness of the PC70BM buffer layer for optimized PSC performance. In this work, we show that by applying just enough N-DMBI doping principle, we can maintain the power conversion efficiency (PCE) of inverted PSCs with a thick (200 nm) PC70BM diffusion blocking layer. To better understand the origin of an optimal doping level, we combined the experimental results with simulations adapted to the PSCs reported here. Importantly, just enough 0.3% wt N-DMBI-doped 200 nm PC70BM diffusion blocking layer-based inverted PCSs retain a high thermal stability at 60 °C of up to 1000 h without sacrificing their PCE photovoltaic parameters.

Novel Mg- and Ga-doped ZnO/Li-Doped Graphene Oxide Transparent Electrode/Electron-Transporting Layer Combinations for High-Performance Thin-Film Solar Cells

Herein, a novel combination of Mg- and Ga-co-doped ZnO (MGZO)/Li-doped graphene oxide (LGO) transparent electrode (TE)/electron-transporting layer (ETL) has been applied for the first time in Cu₂ ZnSn(S,Se)₄ (CZTSSe) thin-film solar cells (TFSCs). MGZO has a wide optical spectrum with high transmittance compared to that with conventional Al-doped ZnO (AZO), enabling additional photon harvesting, and has a low electrical resistance that increases electron collection rate. These excellent optoelectronic properties significantly improved the short-circuit current density and fill factor of the TFSCs. Additionally, the solution-processable alternative LGO ETL prevented plasma-induced damage to chemical bath deposited cadmium sulfide (CdS) buffer, thereby enabling the maintenance of high-quality junctions using a thin CdS buffer layer (≈30 nm). Interfacial engineering with LGO improved the V_oc of the CZTSSe TFSCs from 466 to 502 mV. Furthermore, the tunable work function obtained through Li doping generated a more favorable band offset in CdS/LGO/MGZO interfaces, thereby, improving the electron collection. The MGZO/LGO TE/ETL combination achieved a power conversion efficiency of 10.67%, which is considerably higher than that of conventional AZO/intrinsic ZnO (8.33%).

Dehydration-Reaction-Based Low-Temperature Synthesis of Amorphous SnOx for High-Performance Perovskite Solar Cells

The development of methodologies for synthesizing carrier-transporting materials is critical for optoelectronic device fabrication. Amorphous metal oxides have emerged as potential carrier transport materials for perovskite tandem solar cells and flexible electronics due to their ease of fabrication and excellent electronic properties. However, perovskite solar cells employing amorphous metal oxides as the electron-transporting layers (ETLs) remain inefficient. This research describes a moderate dehydration reaction for the low-temperature synthesis of amorphous SnO_x. We investigated this amorphous SnO_x as the ETL for perovskite solar cells and demonstrated a maximum power conversion efficiency (PCE) of 20.4%, the greatest efficiency ever attained with an amorphous metal oxide ETL produced below 100 °C. Remarkably, the device maintained 85% of its initial efficiency for more than 4800 h. Furthermore, flexible perovskite solar cells based on this amorphous SnO_x have a maximum PCE of 11.7%. Finally, this amorphous SnO_x was used to fabricate LEDs and exhibited a maximum external quantum efficiency of over 3%.

Enhanced Performance and Stability of TiO2 -Nanoparticles-Based Perovskite Solar Cells Employing a Cheap Polymeric Surface Modifier

Interface engineering of TiO₂ nanoparticles (NPs)-based perovskite solar cells (PVSCs) is often necessary to facilitate the extraction and transport of charge carriers. In this work, poly[{9,9-bis[3'-(N,N-dimethyl)propyl]-2,7-fluorene}-alt-2,7-(9,9-dioctylfluorene)] (PFN) and polystyrene (PS) are demonstrated to be effective surface modifiers of the TiO₂ NPs electron-transporting layer in n-i-p PVSCs. The low-cost insulating polymer PS performs better than the PFN conjugated polymer owing to its high film quality, low surface energy and insulating characteristics. A peak power conversion efficiency (PCE) of 15.09 % with an open-circuit voltage (V_OC ) of 1.05 V and a PCE of 17.13 % with an ultrahigh V_OC of 1.18 V is achieved with TiO₂ NPs/PS-based PVSCs using poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) and spiro-OMeTAD, respectively, as the hole-transporting material.

Interface Engineering of Metal Oxides using Ammonium Anthracene in Inverted Organic Solar Cells

In this work, by casting water-soluble ammonium anthracene on metal oxides, the organic surface modifier re-engineered the interface of the metal oxide to improve charge transport. The energy level of ammonium anthracene increased the work function of indium tin oxide (ITO), functioning as a hole-blocker (electron-transporter). Solar cells in which ITO was treated by the ammonium anthracene produced an average power conversion efficiency (PCE) of 5.8% without ZnO, the electron-transporting layer. When the ammonium anthracene was applied to ZnO, an average PCE of 8.1% was achieved, which is higher than the average PCE of 7.5% for nontreated ZnO-based devices.

Enhanced Efficiency and Stability of Inverted Perovskite Solar Cells Using Highly Crystalline SnO2 Nanocrystals as the Robust Electron-Transporting Layer

Highly crystalline SnO2 is demonstrated to serve as a stable and robust electron-transporting layer for high-performance perovskite solar cells. Benefiting from its high crystallinity, the relatively thick SnO2 electron-transporting layer (≈120 nm) provides a respectable electron-transporting property to yield a promising power conversion efficiency (PCE)(18.8%) Over 90% of the initial PCE can be retained after 30 d storage in ambient with ≈70% relative humidity.