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Cao K, Zhu J, Wu Y, Ge M, Zhu Y, Qian J, Wang Y, Hu K, Lu J, Shen W, Liu L, Chen S. Suppressing Excess Lead Iodide Aggregation and Reducing N-Type Doping at Perovskite/HTL Interface for Efficient Perovskite Solar Cells. Small 2023; 19:e2301822. [PMID: 37386817 DOI: 10.1002/smll.202301822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 05/24/2023] [Indexed: 07/01/2023]
Abstract
Excess lead iodide (PbI2 ) aggregation at the charge carrier transport interface leads to energy loss and acts as unstable origins in perovskite solar cells (PSCs). Here, a strategy is reported to modulate the interfacial excess PbI2 by introducing π-conjugated small-molecule semiconductors 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC) into perovskite films through an antisolvent addition method. The coordination of TAPC to PbI units through the electron-donating triphenylamine groups and π-Pb2+ interactions allows for a compact perovskite film with reduced excess PbI2 aggregates. Besides, preferred energy level alignment is achieved due to the suppressed n-type doping effect at the hole transport layer (HTL) interfaces. As a result, the TAPC-modified PSC based on Cs0.05 (FA0.85 MA0.15 )0.95 Pb(I0.85 Br0.15 )3 triple-cation perovskite achieved an improved PCE from 18.37% to 20.68% and retained ≈90% of the initial efficiency after 30 days of aging under ambient conditions. Moreover, the TAPC-modified device based on FA0.95 MA0.05 PbI2.85 Br0.15 perovskite produced an improved efficiency of 23.15% compared to the control (21.19%). These results provide an effective strategy for improving the performance of PbI2 -rich PSCs.
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Affiliation(s)
- Kun Cao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Jiajun Zhu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Yupei Wu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Mengru Ge
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Yuxuan Zhu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Jie Qian
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Yulong Wang
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Kaiwen Hu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Jianfeng Lu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Wei Shen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Lihui Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
| | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, P. R. China
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Hao L, Li Z, Liu R, Shao Z, Wang L, Wang X, Cui G, Pang S. Pressure-Assisted Space-Confinement Strategy to Eliminate PbI 2 in Perovskite Layers toward Improved Operational Stability. ACS Appl Mater Interfaces 2022; 14:12442-12449. [PMID: 35234437 DOI: 10.1021/acsami.1c21800] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The existence of the PbI2 phase in the perovskite film is normally inevitable because of the easy sublimation of the organic component during the crystallization process under a relatively high annealing temperature. However, excess PbI2 will cause significant degradation on open current voltage (VOC) and fill factor (FF) under continuous illumination. Here, we developed a pressure-assisted space-confinement (PASC) method to enhance the phase purity of the perovskite film fabricated by the two-step spin-coating method. It was found that high pressure is more conductive to lower the sublimation rate of the organic units, and the space confinement is more favorable for the Ostwald ripening. The combination of them can easily fabricate high-quality perovskite films with large crystal grains and eliminated PbI2 remnants. As expected, the efficiency of the solar cell was improved from 20.38 to 22.26%; more importantly, the operational stability of the corresponding device had a pronounced improvement, which remains over 85% of its initial efficiency after 500 h maximum power point tracking measurement. Based on this PASC method, a prototype PSC module (PSM) with an active area of 14 cm2 was also fabricated reaching an efficiency over 17%.
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Affiliation(s)
- Lianzheng Hao
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Zhipeng Li
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Ranran Liu
- Qingdao University of Science and Technology, Qingdao 266042, P. R. China
| | - Zhipeng Shao
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Li Wang
- Qingdao University of Science and Technology, Qingdao 266042, P. R. China
| | - Xiao Wang
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
| | - Guanglei Cui
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
- School of Future Technology, University of Chinese Academy of Sciences, Beijing 100190, P.R. China
| | - Shuping Pang
- Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China
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Hu Z, An Q, Xiang H, Aigouy L, Sun B, Vaynzof Y, Chen Z. Enhancing the Efficiency and Stability of Triple-Cation Perovskite Solar Cells by Eliminating Excess PbI 2 from the Perovskite/Hole Transport Layer Interface. ACS Appl Mater Interfaces 2020; 12:54824-54832. [PMID: 33226765 DOI: 10.1021/acsami.0c17258] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Metal halide perovskites are promising contenders for next-generation photovoltaic applications due to their remarkable photovoltaic efficiency and their compatibility with solution-processed fabrication. Among the various strategies to control the crystallinity and the morphology of the perovskite active layer and its interfaces with the transport layers, fabrication of perovskite solar cells from precursor solutions with a slight excess of PbI2 has become very common. Despite this, the role of such excess PbI2 is still rather controversial, lacking consensus on its effect on the bulk and interface properties of the perovskite layer. In this work, we investigate the effect of removing the excess PbI2 from the surface of a triple-cation mixed-halide Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3 perovskite layer by four different organic salts on their photovoltaic performance and stability. We show that treatments with iodide salts such as methylammonium iodide (MAI) and formamidinium iodide (FAI) can lead to the strongest beneficial effects on solar cell efficiency, charge recombination suppression, and stability while non-iodide salts such as methylammonium bromide (MABr) and methylammonium chloride (MACl) can also provide improvement in terms of charge recombination suppression and stability to a moderate extent in comparison to the untreated sample. Under optimized conditions and continuous solar illumination, the MAI- and FAI-treated devices maintained 81 and 86% of their initial power conversion efficiency (PCEs), respectively, after 100 h of continuous illumination (versus 64% for the untreated solar cell with excess PbI2). Our study demonstrates that eliminating excess PbI2 at the perovskite/hole transport layer (HTL) interface by treating the perovskite surface with organic salts is a simple and efficient route to enhance the efficiency, and in particular the stability of perovskite solar cells.
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Affiliation(s)
- Zhelu Hu
- Laboratoire de Physique et d'Étude des matériaux (LPEM, UMR 8213), ESPCI Paris, PSL University, CNRS, Sorbonne University, 10 Rue Vauquelin, 75005 Paris, France
| | - Qingzhi An
- Integrated Centre for Applied Physics and Photonic Materials and Centre for Advancing Electronics Dresden (cfaed), Technical University of Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany
| | - Hengyang Xiang
- Laboratoire de Physique et d'Étude des matériaux (LPEM, UMR 8213), ESPCI Paris, PSL University, CNRS, Sorbonne University, 10 Rue Vauquelin, 75005 Paris, France
| | - Lionel Aigouy
- Laboratoire de Physique et d'Étude des matériaux (LPEM, UMR 8213), ESPCI Paris, PSL University, CNRS, Sorbonne University, 10 Rue Vauquelin, 75005 Paris, France
| | - Baoquan Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren'ai Road, 215123 Suzhou, Jiangsu, P. R. China
| | - Yana Vaynzof
- Integrated Centre for Applied Physics and Photonic Materials and Centre for Advancing Electronics Dresden (cfaed), Technical University of Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany
| | - Zhuoying Chen
- Laboratoire de Physique et d'Étude des matériaux (LPEM, UMR 8213), ESPCI Paris, PSL University, CNRS, Sorbonne University, 10 Rue Vauquelin, 75005 Paris, France
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