A Solvent-Free, Thermally Curable Low-Temperature Organic Planarization Layer for Thin Film Encapsulation

Thin film encapsulation (TFE) is an essential component to ensure reliable operation of environmentally susceptible organic light-emitting diode-based display. In order to integrate defect-free TFE on display with complex surface structures, additional planarization layer is imperative to planarize the surface topography. The thickness of conventional planarization layer is as high as tens of µm, but the thickness must be reduced substantially to minimize the light leakage in smaller devices such as micro light-emitting diodes. In this study, a thin-less than 2 µm-planarization is achieved via solvent-free process, initiated chemical vapor deposition (iCVD). By adapting copolymer from two soft, but curable monomers, glycidyl acrylate (GA) and 2-(dimethylamino)ethyl methacrylate, excellent planarization performance is achieved on various nano-grating patterns. With only 1.5 µm-thick iCVD planarization layer, a 600 nm-deep trench polyurethane acrylate pattern is flattened completely. The TFE fabricated on planarized pattern exhibits excellent barrier property as fabricated on flat glass substrate, which strongly suggests that iCVD planarization layer can serve as a promising planarization layer to fabricate TFE on various types of complicated device surfaces.

Printed Organic Light-Emitting Diodes on Fabric with Roll-to-Roll Sputtered ITO Anode and Poly(vinyl alcohol) Planarization Layer

Electronic textiles, which are a combination of fabrics and electronics, can help realize wearable electronic devices by changing the rigidity of these textiles. We demonstrate organic light-emitting diodes (OLEDs) by directly printing the emitting material on fabric substrates using the nozzle-printing technique. Printing the emitting material directly on a fabric substrate with a rough surface is difficult. To address this, we introduce a planarization layer by using a synthesized 3.5 wt % poly(vinyl alcohol) (PVA) solution. The sputtered ITO anode with the thermally annealed PVA planarization layer on a fabric substrate achieves a low sheet resistance in the range of 60-80 Ω/sq, whereas the ITO electrode without a PVA layer exhibits high sheet resistance values of 10-25 kΩ/sq. This result is because the thermally annealed PVA layer on the fabric surface has a uniform surface morphology and a water contact angle as high as 96°, thus acting as a protective layer with a waterproofing effect; in contrast, the water is completely absorbed on the rough surface without a PVA layer. The fabric-based OLEDs with a thermally annealed PVA layer exhibit a lower turn-on voltage of 3 V and higher luminance values of 5346 cd/m² at 8 V compared with the devices without a PVA layer (7 V and 3622 cd/m²) at 18 V. These fabric-based OLEDs with a PVA planarization layer can be produced by the nozzle-printing process and can achieve selective patterning as well as direct printing of the emitting material and ITO sputtering on a fabric substrate; furthermore, they emit well even when it bent into a circle with a radius of 1 cm.

Embedded Reverse-Offset Printing of Silver Nanowires and Its Application to Double-Stacked Transparent Electrodes with Microscale Patterns

We propose an embedded reverse-offset printing (EROP) method, which generates silver nanowire (AgNW) transparent electrodes for display applications. The proposed EROP method can solve the two critical issues of microscale pattern formation and surface planarization. The AgNW electrode had a transmittance of 82% at 550 nm, a sheet resistance of 12.2 Ω/sq, and a 3.27 nm smooth surface. We realized the roll-based pattern formation of AgNW on a plastic substrate as small as 10 μm with negligible step differences to facilitate the proposed method. The proposed EROP method also produced a double-stacked AgNW electrode, enabling the simultaneous operation of separately micropatterned devices. To verify the usefulness of EROP, we fabricated an organic light-emitting diode (OLED) device to demonstrate leakage current reduction and efficiency improvement compared with a conventional indium tin oxide (ITO)-based OLED device. The EROP-based OLED showed 38 and 25% higher current efficiencies than an insulator-patterned AgNW OLED and a conventional ITO-based OLED, respectively.

Impact of Acceptor Fluorination on the Performance of All-Polymer Solar Cells

Here, we systematically study the effect of fluorination on the performance of all-polymer solar cells by employing a naphthalene diimide (NDI)-based polymer acceptor with thiophene-flanked phenyl co-monomer. Fluorination of the phenyl co-monomer with either two or four fluorine units is used to create a series of acceptor polymers with either no fluorination (PNDITPhT), bifluorination (PNDITF2T), or tetrafluorination (PNDITF4T). In blends with the donor polymer PTB7-Th, fluorination results in an increase in power conversion efficiency from 3.1 to 4.6% despite a decrease in open-circuit voltage from 0.86 V (unfluorinated) to 0.78 V (tetrafluorinated). Countering this decrease in open-circuit voltage is an increase in short-circuit current from 7.7 to 11.7 mA/cm² as well as an increase in fill factor from 0.45 to 0.53. The origin of the improvement in performance with fluorination is explored using a combination of morphological, photophysical, and charge-transport studies. Interestingly, fluorination is found not to affect the ultrafast charge-generation kinetics, but instead is found to improve charge-collection yield subsequent to charge generation, linked to improved electron mobility and improved phase separation. Fluorination also leads to improved light absorption, with the blue-shifted absorption profile of the fluorinated polymers complementing the absorption profile of the low-band gap PTB7-Th.

Fluorescent Polymer Incorporating Triazolyl Coumarin Units for Cu2+ Detection via Planarization of Ict-Based Fluorophore

A novel fluorescent polymer with pendant triazolyl coumarin units was synthesized through radical polymerization. The polymer showed reasonable sensitivity and selectivity towards Cu²⁺ in acetonitrile in comparison to other tested metal ions with a significant quenching effect on fluorescence and blue shifting in the range of 20 nm. The blue shift was assigned to the conformation changes of the diethylamino group from the coumarin moiety which led to planarization of the triazolyl coumarin units. The possible binding modes for Cu²⁺ towards the polymer were determined through the comparison of the emission responses of the polymer, starting vinyl monomer and reference compound, and the triazole ring was identified as one of the possible binding sites for Cu²⁺. The detection limits of the polymer and vinyl monomer towards Cu²⁺ were determined from fluorescence titration experiments and a higher sensitivity (35 times) was observed for the polymer compared with its starting monomer.

Effect of Boron Doping on the Wear Behavior of the Growth and Nucleation Surfaces of Micro- and Nanocrystalline Diamond Films

B-doped diamond has become the ultimate material for applications in the field of microelectromechanical systems (MEMS), which require both highly wear resistant and electrically conductive diamond films and microstructures. Despite the extensive research of the tribological properties of undoped diamond, to date there is very limited knowledge of the wear properties of highly B-doped diamond. Therefore, in this work a comprehensive investigation of the wear behavior of highly B-doped diamond is presented. Reciprocating sliding tests are performed on micro- and nanocrystalline diamond (MCD, NCD) films with varying B-doping levels and thicknesses. We demonstrate a linear dependency of the wear rate of the different diamond films with the B-doping level. Specifically, the wear rate increases by a factor of 3 between NCD films with 0.6 and 2.8 at. % B-doping levels. This increase in the wear rate can be linked to a 50% decrease in both hardness and elastic modulus of the highly B-doped NCD films, as determined by nanoindentation measurements. Moreover, we show that fine-grained diamond films are more prone to wear. Particularly, NCD films with a 3× smaller grain size but similar B-doping levels exhibit a double wear rate, indicating the crucial role of the grain size on the diamond film wear behavior. On the other hand, MCD films are the most wear-resistant films due to their larger grains and lower B-doping levels. We propose a graphical scheme of the wear behavior which involves planarization and mechanochemically driven amorphization of the surface to describe the wear mechanism of B-doped diamond films. Finally, the wear behavior of the nucleation surface of NCD films is investigated for the first time. In particular, the nucleation surface is shown to be susceptible to higher wear compared to the growth surface due to its higher grain boundary line density.

Visible-Light-Driven Hydrogen Evolution Using Planarized Conjugated Polymer Photocatalysts

Linear poly(p‐phenylene)s are modestly active UV photocatalysts for hydrogen production in the presence of a sacrificial electron donor. Introduction of planarized fluorene, carbazole, dibenzo[b,d]thiophene or dibenzo[b,d]thiophene sulfone units greatly enhances the H₂ evolution rate. The most active dibenzo[b,d]thiophene sulfone co‐polymer has a UV photocatalytic activity that rivals TiO₂, but is much more active under visible light. The dibenzo[b,d]thiophene sulfone co‐polymer has an apparent quantum yield of 2.3 % at 420 nm, as compared to 0.1 % for platinized commercial pristine carbon nitride.

Self-patterned nanoparticle layers for vertical interconnects: application in tandem solar cells

We demonstrate self-patterned insulating nanoparticle layers to define local electrical interconnects in thin-film electronic devices. We show this with thin-film silicon tandem solar cells, where we introduce between the two component cells a solution-processed SiO2 nanoparticle layer with local openings to allow for charge transport. Because of its low refractive index, high transparency, and smooth surface, the SiO2 nanoparticle layer acts as an excellent intermediate reflector allowing for efficient light management.

Amyloid Fibril-Induced Structural and Spectral Modifications in the Thioflavin-T Optical Probe

Motivated by future possibilities to design target molecules for fibrils with diagnostic or therapeutic capability related to amyloidosis diseases, we investigate in this work the dielectric nature of amyloid fibril microenvironments in different binding sites using an optical probe, thioflavin-T (THT), which has been used extensively to stain such fibrils. We study the fibril-environment-induced structural and spectral changes of THT at each binding site and compare the results to the fibril-free situation in aqueous solution. All binding sites are found to show a similar effect with respect to the conformational changes of THT; in the presence of the fibril, its molecular geometry tends to become planarized. However, depending on the dielectric nature of the specific binding site, a red shift, blue shift, or no shift in the absorption spectra of THT is predicted. Interestingly, the experimentally measured red shift in the spectra is seen only when THT binds to one of the core or surface-binding sites. It is found that the dielectric nature of the microenvironment in the fibril is strongly nonhomogeneous.

Wafer Scale Integration of CMOS Chips for Biomedical Applications via Self-Aligned Masking

This paper presents a novel technique for the integration of small CMOS chips into a large area substrate. A key component of the technique is the CMOS chip based self-aligned masking. This allows for the fabrication of sockets in wafers that are at most 5 µm larger than the chip on each side. The chip and the large area substrate are bonded onto a carrier such that the top surfaces of the two components are flush. The unique features of this technique enable the integration of macroscale components, such as leads and microfluidics. Furthermore, the integration process allows for MEMS micromachining after CMOS die-wafer integration. To demonstrate the capabilities of the proposed technology, a low-power integrated potentiostat chip for biosensing implemented in the AMI 0.5 µm CMOS technology is integrated in a silicon substrate. The horizontal gap and the vertical displacement between the chip and the large area substrate measured after the integration were 4 µm and 0.5 µm, respectively. A number of 104 interconnects are patterned with high-precision alignment. Electrical measurements have shown that the functionality of the chip is not affected by the integration process.