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Karasulu B, Roozeboom F, Mameli A. High-Throughput Area-Selective Spatial Atomic Layer Deposition of SiO 2 with Interleaved Small Molecule Inhibitors and Integrated Back-Etch Correction for Low Defectivity. Adv Mater 2023:e2301204. [PMID: 37043671 DOI: 10.1002/adma.202301204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 04/07/2023] [Indexed: 06/19/2023]
Abstract
A first-of-its-kind area-selective deposition process for SiO2 is developed consisting of film deposition with interleaved exposures to small molecule inhibitors (SMIs) and back-etch correction steps, within the same spatial atomic layer deposition (ALD) tool. The synergy of these aspects results in selective SiO2 deposition up to ~23 nm with high selectivity and throughput, with SiO2 growth area and ZnO nongrowth area. The selectivity is corroborated by both X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering spectroscopy (LEIS). The selectivity conferred by two different SMIs, ethylbutyric acid, and pivalic acid has been compared experimentally and theoretically. Density Functional Theory (DFT) calculations reveal that selective surface functionalization using both SMIs is predominantly controlled thermodynamically, while the better selectivity achieved when using trimethylacetic acid can be explained by its higher packing density compared to ethylbutyric acid. By employing the trimethylacetic acid as SMI on other starting surfaces (Ta2 O5 , ZrO2 , etc.) and probing the selectivity, a broader use of carboxylic acid inhibitors for different substrates is demonstrated. It is believed that the current results highlight the subtleties in SMI properties such as size, geometry, and packing, as well as interleaved back-etch steps, which are key in developing ever more effective strategies for highly selective deposition processes.
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Affiliation(s)
- Bora Karasulu
- Department of Chemistry, University of Warwick, Gibbet Hill Road, Coventry, CV4 7AL, UK
| | - Fred Roozeboom
- Faculty of Science and Technology, University of Twente, HENGELOSESTRAAT, Enschede, 7500 AE, The Netherlands
| | - Alfredo Mameli
- TNO-Holst Centre, High Tech Campus 31, Eindhoven, 6565 AE, The Netherlands
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2
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Ullah F, Ibrahim K, Mistry K, Samad A, Shahin A, Sanderson J, Musselman K. WS 2 and WS 2-ZnO Chemiresistive Gas Sensors: The Role of Analyte Charge Asymmetry and Molecular Size. ACS Sens 2023; 8:1630-1638. [PMID: 36926856 DOI: 10.1021/acssensors.2c02762] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/18/2023]
Abstract
We investigate the interaction of various analytes (toluene, acetone, ethanol, and water) possessing different structures, bonding, and molecular sizes with a laser-exfoliated WS2 sensing material in a chemiresistive sensor. The sensor showed a clear response to all analytes, which was significantly enhanced by modifying the WS2 surface. This was achieved by creating WS2-ZnO heterojunctions via the deposition of ZnO nanoparticles on the WS2 surface with a high-throughput, atmospheric-pressure spatial atomic layer deposition system. Water and ethanol produced a much higher response compared to acetone and toluene for both the WS2 and WS2-ZnO sensing mediums. We resolved that the charge-asymmetry points in analyte molecules play a key role in determining the sensor response. High charge-asymmetry points correspond to highly polar bonds (HPBs) in a neutral molecule that have a high probability of interaction with the sensing medium. Our results indicate that the polarity of the HPBs primarily dictates the interaction between the analyte and sensing medium and consequently controls the response of the sensor. Moreover, the size of the analyte molecule was found to affect the sensing response; if two molecules have the same HPBs and are exposed to the same sensing medium, the smaller molecule is likely to produce a higher and faster response. Our study provides a comprehensive picture of analyte-sensor interactions that can help in advancing semiconductor gas sensors, including those based on two-dimensional materials.
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Affiliation(s)
- Farman Ullah
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada.,Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Khaled Ibrahim
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada.,Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Kissan Mistry
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada.,Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Abdus Samad
- Department of Materials Science and Engineering, Southern University of Science and Technology 1088 Xueyuan Avenue, Shenzhen 517055, China
| | - Ahmed Shahin
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada.,Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Joseph Sanderson
- Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Kevin Musselman
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada.,Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
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3
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Mistry K, Nguyen VH, Arabi M, Ibrahim KH, Asgarimoghaddam H, Yavuz M, Muñoz-Rojas D, Abdel-Rahman E, Musselman KP. Highly Sensitive Self-Actuated Zinc Oxide Resonant Microcantilever Humidity Sensor. Nano Lett 2022; 22:3196-3203. [PMID: 35404606 DOI: 10.1021/acs.nanolett.1c04378] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
A resonant microcantilever sensor is fabricated from a zinc oxide (ZnO) thin film, which serves as both the structural and sensing layers. An open-air spatial atomic layer deposition technique is used to deposit the ZnO layer to achieve a ∼200 nm thickness, an order of magnitude lower than the thicknesses of conventional microcantilever sensors. The reduction in the number of layers, in the cantilever dimensions, and its overall lower mass lead to an ultrahigh sensitivity, demonstrated by detection of low humidity levels. A maximum sensitivity of 23649 ppm/% RH at 5.8% RH is observed, which is several orders of magnitude larger than those reported for other resonant humidity sensors. Furthermore, the ZnO cantilever sensor is self-actuated in air, an advantageous detection mode that enables simpler and lower-power-consumption sensors.
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Affiliation(s)
- Kissan Mistry
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
- Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
| | - Viet Huong Nguyen
- Faculty of Materials Science and Engineering, Phenikaa University, Hanoi, 12116, Vietnam
| | - Mohamed Arabi
- Department of Systems Design Engineering, University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
| | - Khaled H Ibrahim
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
- Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
| | - Hatameh Asgarimoghaddam
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
- Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
| | - Mustafa Yavuz
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
- Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
| | - David Muñoz-Rojas
- University Grenoble Alpes, CNRS, Grenoble INP, LMGP, 38000 Grenoble, France
| | - Eihab Abdel-Rahman
- Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
- Department of Systems Design Engineering, University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
| | - Kevin P Musselman
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
- Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Avenue West, Ontario, N2L 3G1, Canada
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Bardet L, Papanastasiou DT, Crivello C, Akbari M, Resende J, Sekkat A, Sanchez-Velasquez C, Rapenne L, Jiménez C, Muñoz-Rojas D, Denneulin A, Bellet D. Silver Nanowire Networks: Ways to Enhance Their Physical Properties and Stability. Nanomaterials (Basel) 2021; 11:2785. [PMID: 34835550 PMCID: PMC8625099 DOI: 10.3390/nano11112785] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 10/17/2021] [Accepted: 10/18/2021] [Indexed: 01/02/2023]
Abstract
Silver nanowire (AgNW) networks have been intensively investigated in recent years. Thanks to their attractive physical properties in terms of optical transparency and electrical conductivity, as well as their mechanical performance, AgNW networks are promising transparent electrodes (TE) for several devices, such as solar cells, transparent heaters, touch screens or light-emitting devices. However, morphological instabilities, low adhesion to the substrate, surface roughness and ageing issues may limit their broader use and need to be tackled for a successful performance and long working lifetime. The aim of the present work is to highlight efficient strategies to optimize the physical properties of AgNW networks. In order to situate our work in relation to existing literature, we briefly reported recent studies which investigated physical properties of AgNW networks. First, we investigated the optimization of optical transparency and electrical conductivity by comparing two types of AgNWs with different morphologies, including PVP layer and AgNW dimensions. In addition, their response to thermal treatment was deeply investigated. Then, zinc oxide (ZnO) and tin oxide (SnO2) protective films deposited by Atmospheric Pressure Spatial Atomic Layer Deposition (AP-SALD) were compared for one type of AgNW. We clearly demonstrated that coating AgNW networks with these thin oxide layers is an efficient approach to enhance the morphological stability of AgNWs when subjected to thermal stress. Finally, we discussed the main future challenges linked with AgNW networks optimization processes.
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Affiliation(s)
- Laetitia Bardet
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LGP2, F-38000 Grenoble, France;
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (D.T.P.); (C.C.); (M.A.); (A.S.); (C.S.-V.); (L.R.); (C.J.); (D.M.-R.)
| | - Dorina T. Papanastasiou
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (D.T.P.); (C.C.); (M.A.); (A.S.); (C.S.-V.); (L.R.); (C.J.); (D.M.-R.)
| | - Chiara Crivello
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (D.T.P.); (C.C.); (M.A.); (A.S.); (C.S.-V.); (L.R.); (C.J.); (D.M.-R.)
| | - Masoud Akbari
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (D.T.P.); (C.C.); (M.A.); (A.S.); (C.S.-V.); (L.R.); (C.J.); (D.M.-R.)
| | - João Resende
- AlmaScience Colab, Madan Parque, 2829-516 Caparica, Portugal;
| | - Abderrahime Sekkat
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (D.T.P.); (C.C.); (M.A.); (A.S.); (C.S.-V.); (L.R.); (C.J.); (D.M.-R.)
| | - Camilo Sanchez-Velasquez
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (D.T.P.); (C.C.); (M.A.); (A.S.); (C.S.-V.); (L.R.); (C.J.); (D.M.-R.)
| | - Laetitia Rapenne
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (D.T.P.); (C.C.); (M.A.); (A.S.); (C.S.-V.); (L.R.); (C.J.); (D.M.-R.)
| | - Carmen Jiménez
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (D.T.P.); (C.C.); (M.A.); (A.S.); (C.S.-V.); (L.R.); (C.J.); (D.M.-R.)
| | - David Muñoz-Rojas
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (D.T.P.); (C.C.); (M.A.); (A.S.); (C.S.-V.); (L.R.); (C.J.); (D.M.-R.)
| | - Aurore Denneulin
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LGP2, F-38000 Grenoble, France;
| | - Daniel Bellet
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France; (D.T.P.); (C.C.); (M.A.); (A.S.); (C.S.-V.); (L.R.); (C.J.); (D.M.-R.)
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Zhao MJ, Sun ZT, Zhang ZX, Geng XP, Wu WY, Lien SY, Zhu WZ. Suppression of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in Different Conditions. Materials (Basel) 2020; 13:ma13183910. [PMID: 32899677 PMCID: PMC7558328 DOI: 10.3390/ma13183910] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/08/2020] [Revised: 08/30/2020] [Accepted: 09/02/2020] [Indexed: 11/18/2022]
Abstract
Zinc oxide (ZnO) has drawn much attention due to its excellent optical and electrical properties. In this study, ZnO film was prepared by a high-deposition-rate spatial atomic layer deposition (ALD) and subjected to a post-annealing process to suppress the intrinsic defects and improve the crystallinity and film properties. The results show that the film thickness increases with annealing temperature owing to the increment of oxide layer caused by the suppression of oxygen vacancy defects as indicated by the X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) spectra. The film transmittance is seldom influenced by annealing. The refractive index increases with annealing temperature at 300–700 °C, possibly due to higher density and crystallinity of the film. The band gap decreases after annealing, which should be ascribed to the decrease in carrier concentration according to Burstein–Moss model. The carrier concentration decreases with increasing annealing temperature at 300–700 °C since the oxygen vacancy defects are suppressed, then it increases at 800 °C possibly due to the out-diffusion of oxygen atoms from the film. Meanwhile, the carrier mobility increases with temperature due to higher crystallinity and larger crystallite size. The film resistivity increases at 300–700 °C then decreases at 800 °C, which should be ascribed primarily to the variation of carrier concentration.
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Affiliation(s)
- Ming-Jie Zhao
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-T.S.); (Z.-X.Z.); (X.-P.G.); (W.-Z.Z.)
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
| | - Zhi-Tao Sun
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-T.S.); (Z.-X.Z.); (X.-P.G.); (W.-Z.Z.)
| | - Zhi-Xuan Zhang
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-T.S.); (Z.-X.Z.); (X.-P.G.); (W.-Z.Z.)
| | - Xin-Peng Geng
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-T.S.); (Z.-X.Z.); (X.-P.G.); (W.-Z.Z.)
| | - Wan-Yu Wu
- Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan;
| | - Shui-Yang Lien
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-T.S.); (Z.-X.Z.); (X.-P.G.); (W.-Z.Z.)
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
- Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan;
- Correspondence:
| | - Wen-Zhang Zhu
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-T.S.); (Z.-X.Z.); (X.-P.G.); (W.-Z.Z.)
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
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6
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Hsu CH, Chen KT, Huang PH, Wu WY, Zhang XY, Wang C, Liang LS, Gao P, Qiu Y, Lien SY, Su ZB, Chen ZR, Zhu WZ. Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells. Nanomaterials (Basel) 2020; 10:E1322. [PMID: 32635629 PMCID: PMC7408533 DOI: 10.3390/nano10071322] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/27/2020] [Revised: 07/02/2020] [Accepted: 07/03/2020] [Indexed: 11/16/2022]
Abstract
In this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO2) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the properties of the TiO2 films. The experimental results show that the sALD TiO2 has a similar deposition rate per cycle to other ALD processes using oxygen plasma or ozone oxidant, implying that the growth is limited by titanium tetraisopropoxide steric hindrance. The structure of the as-deposited sALD TiO2 films is amorphous and changes to polycrystalline anatase at the annealing temperature of 450 °C. All the sALD TiO2 films have a low absorption coefficient at the level of 10-3 cm-1 at wavelengths greater than 500 nm. The annealing temperatures of 550 °C are expected to have a high compactness, evaluated by the refractive index and x-ray photoelectron spectrometer measurements. Finally, the 550 °C-annealed sALD TiO2 film with a thickness of ~8 nm is applied to perovskite solar cells as a compact electron transport layer. The significantly enhanced open-circuit voltage and conversion efficiency demonstrate the great potential of the sALD TiO2 compact layer in perovskite solar cell applications.
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Affiliation(s)
- Chia-Hsun Hsu
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (C.-H.H.); (K.-T.C.); (X.-Y.Z.); (C.W.); (Z.-B.S.); (Z.-R.C.); (W.-Z.Z.)
| | - Ka-Te Chen
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (C.-H.H.); (K.-T.C.); (X.-Y.Z.); (C.W.); (Z.-B.S.); (Z.-R.C.); (W.-Z.Z.)
| | - Pao-Hsun Huang
- School of Information Engineering, Jimei University, Xiamen 361021, China;
| | - Wan-Yu Wu
- Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan;
| | - Xiao-Ying Zhang
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (C.-H.H.); (K.-T.C.); (X.-Y.Z.); (C.W.); (Z.-B.S.); (Z.-R.C.); (W.-Z.Z.)
| | - Chen Wang
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (C.-H.H.); (K.-T.C.); (X.-Y.Z.); (C.W.); (Z.-B.S.); (Z.-R.C.); (W.-Z.Z.)
| | - Lu-Sheng Liang
- CAS Key Laboratory of Design a Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China; (L.-S.L.); (P.G.)
| | - Peng Gao
- CAS Key Laboratory of Design a Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China; (L.-S.L.); (P.G.)
| | - Yu Qiu
- Key Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou 350108, China;
| | - Shui-Yang Lien
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (C.-H.H.); (K.-T.C.); (X.-Y.Z.); (C.W.); (Z.-B.S.); (Z.-R.C.); (W.-Z.Z.)
- Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan;
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
| | - Zhan-Bo Su
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (C.-H.H.); (K.-T.C.); (X.-Y.Z.); (C.W.); (Z.-B.S.); (Z.-R.C.); (W.-Z.Z.)
| | - Zi-Rong Chen
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (C.-H.H.); (K.-T.C.); (X.-Y.Z.); (C.W.); (Z.-B.S.); (Z.-R.C.); (W.-Z.Z.)
| | - Wen-Zhang Zhu
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (C.-H.H.); (K.-T.C.); (X.-Y.Z.); (C.W.); (Z.-B.S.); (Z.-R.C.); (W.-Z.Z.)
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
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Zhao MJ, Sun ZT, Hsu CH, Huang PH, Zhang XY, Wu WY, Gao P, Qiu Y, Lien SY, Zhu WZ. Zinc Oxide Films with High Transparency and Crystallinity Prepared by a Low Temperature Spatial Atomic Layer Deposition Process. Nanomaterials (Basel) 2020; 10:E459. [PMID: 32143520 DOI: 10.3390/nano10030459] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/10/2020] [Revised: 02/28/2020] [Accepted: 02/29/2020] [Indexed: 11/24/2022]
Abstract
Zinc oxide (ZnO) attracts much attention owing to its remarkable electrical and optical properties for applications in optoelectronics. In this study, ZnO thin films were prepared by spatial atomic layer deposition with diethylzinc and water as precursors. The substrate temperature was varied from 55 to 135 °C to investigate the effects on the optical, electrical, and structural properties of the films. All ZnO samples exhibit an average transmittance in visible and near-infrared light range exceeding 80% and a resistivity in the range of (3.2–9.0) × 10−3 Ω·cm when deposited on a borosilicate glass with a refractive index of ≈1.52. The transmittance, band gap, refractive index, and extinction coefficient are rarely affected, while the resistivity only slightly decreases with increasing temperature. This technique provides a wide process window for depositing ZnO thin films. The results revealed that the films deposited at a substrate of 55 °C were highly crystalline with a preferential (1 0 0) orientation. In addition, the grains grow larger as the substrate temperature increases. The electrical properties and reliability of ZnO/PET samples are also studied in this paper.
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8
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Khan A, Nguyen VH, Muñoz-Rojas D, Aghazadehchors S, Jiménez C, Nguyen ND, Bellet D. Stability Enhancement of Silver Nanowire Networks with Conformal ZnO Coatings Deposited by Atmospheric Pressure Spatial Atomic Layer Deposition. ACS Appl Mater Interfaces 2018; 10:19208-19217. [PMID: 29745648 DOI: 10.1021/acsami.8b03079] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2023]
Abstract
Silver nanowire (AgNW) networks offer excellent electrical and optical properties and have emerged as one of the most attractive alternatives to transparent conductive oxides to be used in flexible optoelectronic applications. However, AgNW networks still suffer from chemical, thermal, and electrical instabilities, which in some cases can hinder their efficient integration as transparent electrodes in devices such as solar cells, transparent heaters, touch screens, and organic light emitting diodes. We have used atmospheric pressure spatial atomic layer deposition (AP-SALD) to fabricate hybrid transparent electrode materials in which the AgNW network is protected by a conformal thin layer of zinc oxide. The choice of AP-SALD allows us to maintain the low-cost and scalable processing of AgNW-based transparent electrodes. The effects of the ZnO coating thickness on the physical properties of AgNW networks are presented. The composite electrodes show a drastic enhancement of both thermal and electrical stabilities. We found that bare AgNWs were stable only up to 300 °C when subjected to thermal ramps, whereas the ZnO coating improved the stability up to 500 °C. Similarly, ZnO-coated AgNWs exhibited an increase of 100% in electrical stability with respect to bare networks, withstanding up to 18 V. A simple physical model shows that the origin of the stability improvement is the result of hindered silver atomic diffusion thanks to the presence of the thin oxide layer and the quality of the interfaces of hybrid electrodes. The effects of ZnO coating on both the network adhesion and optical transparency are also discussed. Finally, we show that the AP-SALD ZnO-coated AgNW networks can be effectively used as very stable transparent heaters.
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Affiliation(s)
- Afzal Khan
- Univ. Grenoble Alpes , CNRS, Grenoble INP, LMGP , 38000 Grenoble , France
- Department of Physics , University of Peshawar , 25120 Peshawar , Pakistan
| | - Viet Huong Nguyen
- Univ. Grenoble Alpes , CNRS, Grenoble INP, LMGP , 38000 Grenoble , France
- Univ. Grenoble Alpes , CEA, LITEN, INES , F-73375 , Le Bourget-du-Lac , France
| | - David Muñoz-Rojas
- Univ. Grenoble Alpes , CNRS, Grenoble INP, LMGP , 38000 Grenoble , France
| | - Sara Aghazadehchors
- Univ. Grenoble Alpes , CNRS, Grenoble INP, LMGP , 38000 Grenoble , France
- Département de Physique, CESAM/Q-MAT, SPIN , Université de Liège , B-4000 Liège , Belgium
| | - Carmen Jiménez
- Univ. Grenoble Alpes , CNRS, Grenoble INP, LMGP , 38000 Grenoble , France
| | - Ngoc Duy Nguyen
- Département de Physique, CESAM/Q-MAT, SPIN , Université de Liège , B-4000 Liège , Belgium
| | - Daniel Bellet
- Univ. Grenoble Alpes , CNRS, Grenoble INP, LMGP , 38000 Grenoble , France
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