A quantum coherent spin in hexagonal boron nitride at ambient conditions

Solid-state spin-photon interfaces that combine single-photon generation and long-lived spin coherence with scalable device integration-ideally under ambient conditions-hold great promise for the implementation of quantum networks and sensors. Despite rapid progress reported across several candidate systems, those possessing quantum coherent single spins at room temperature remain extremely rare. Here we report quantum coherent control under ambient conditions of a single-photon-emitting defect spin in a layered van der Waals material, namely, hexagonal boron nitride. We identify that the carbon-related defect has a spin-triplet electronic ground-state manifold. We demonstrate that the spin coherence is predominantly governed by coupling to only a few proximal nuclei and is prolonged by decoupling protocols. Our results serve to introduce a new platform to realize a room-temperature spin qubit coupled to a multiqubit quantum register or quantum sensor with nanoscale sample proximity.

Nanowire Array Breath Acetone Sensor for Diabetes Monitoring

Diabetic ketoacidosis (DKA) is a life-threatening acute complication of diabetes characterized by the accumulation of ketone bodies in the blood. Breath acetone, a ketone, directly correlates with blood ketones. Therefore, monitoring breath acetone can significantly enhance the safety and efficacy of diabetes care. In this work, the design and fabrication of an InP/Pt/chitosan nanowire array-based chemiresistive acetone sensor is reported. By incorporation of chitosan as a surface-functional layer and a Pt Schottky contact for efficient charge transfer processes and photovoltaic effect, self-powered, highly selective acetone sensing is achieved. The sensor has exhibited an ultra-wide acetone detection range from sub-ppb to >100 000 ppm level at room temperature, covering those in the exhaled breath from healthy individuals (300-800 ppb) to people at high risk of DKA (>75 ppm). The nanowire sensor has also been successfully integrated into a handheld breath testing prototype, the Ketowhistle, which can successfully detect different ranges of acetone concentrations in simulated breath samples. The Ketowhistle demonstrates the immediate potential for non-invasive ketone monitoring for people living with diabetes, in particular for DKA prevention.

Coupling ultrafine TiO2 within pyridinic-N enriched porous carbon towards high-rate and long-life sodium ion capacitors

Coupling TiO2 within N-doped porous carbon (NPC) is essential for enhancing its Na+ storage performance. However, the role of different N configurations in NPC in improving the electrochemical performance of TiO2 is currently unknown. In this study, melamine is deliberately incorporated as a pore-forming agent in the self-assembly process of metal organic framework precursors (NH2-MIL-125(Ti)). This intentional inclusion of melamine leads to the one-pot and in-situ formation of highly active edge-N, which is vital for the development of TiO2/NPC with exceptional reactivity. Electrochemical performance characterization and density functional theory (DFT) calculation indicate that the interaction between TiO2 and pyridinic-N enriched NPC can effectively narrow the bandgap of TiO2/NPC, thereby significantly improving electron/ion transfer. Additionally, the abundant mesoporous channels, high N content and oxygen vacancies also contribute to the fast reaction kinetics of TiO2/NPC. As a result, the optimized TiO2/NPC-M, with high proportion of pyridinic-N (44.1 %) and abundant mesoporous channels (97.8 %), delivers high specific capacity of 282.1 mA h-1 at 0.05 A g-1, superior rate capability of 177.3 mA h-1 at 10 A g-1, and prominent capacity retention of 89.3 % over 5000 cycles even under ultrahigh 10 A g-1. Furthermore, the TiO2/NPC-M//AC sodium ion capacitors (SIC) device achieves a high energy density of 136.7 Wh kg-1 at 200 W kg-1. This research not only offers fresh perspectives on the production of high-performance TiO2-based anodes, but also paves the way for customizing other active materials for energy storage and beyond.

Room-temperature strong coupling in a single-photon emitter-metasurface system

Solid state single-photon sources with high brightness and long coherence time are promising qubit candidates for modern quantum technology. To prevent decoherence processes and preserve the integrity of the qubits, decoupling the emitters from their surrounding environment is essential. To this end, interfacing single photon emitters (SPEs) with high-finesse cavities is required, especially in the strong coupling regime, when the interaction between emitters can be mediated by cavity fields. However, achieving strong coupling at elevated temperatures is challenging due to competing incoherent processes. Here, we address this long-standing problem by using a quantum system, which comprises a class of SPEs in hexagonal boron nitride and a dielectric cavity based on bound states in the continuum (BIC). We experimentally demonstrate, at room temperature, strong coupling of the system with a large Rabi splitting of ~4 meV thanks to the combination of the narrow linewidth and large oscillator strength of the emitters and the efficient photon trapping of the BIC cavity. Our findings unveil opportunities to advance the fundamental understanding of quantum dynamical system in strong coupling regime and to realise scalable quantum devices capable of operating at room temperature.

Tunable Enhanced Second-Harmonic Generation in InP-InAsP Quantum Well Nanomembranes

Second-harmonic generation (SHG) offers a convenient approach for infrared-to-visible light conversion in tunable nanoscale light sources and optical communication. Semiconductor nanostructures offer rich possibilities to tailor their nonlinear optical properties. In this study, strong second-harmonic generation in InP nanomembranes with InAsP quantum well (QW) is demonstrated. Compared with bulk InP, up to 100 times enhancement of SHG is achieved in the short-wave infrared range. This enhancement is shown to be predominantly induced by the resonance-enhanced absorption and quantum confinement of fundamental wavelengths in the InAsP QW. The thin nanomembrane structure will also provide nanocavity enhancement for second-harmonic wavelengths. The enhanced SHG peak wavelengths can also be tuned by changing the QW composition. These findings provide an effective strategy for enhancing and manipulating the second-harmonic generation in semiconductor quantum-confined nanostructures for on-chip all-optical applications.

An efficient modeling workflow for high-performance nanowire single-photon avalanche detector

Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in developing next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire SPDs utilizing avalanche breakdown at reverse-biased conditions. The proposed workflow is explored to maximize computational efficiency and balance time-consuming drift-diffusion simulation with fast script-based post-processing. Without excessive computational effort, we could predict a suite of key device performance metrics, including breakdown voltage, dark/light avalanche built-up time, photon detection efficiency, dark count rate, and the deterministic part of timing jitter due to device structures. Implementing the proposed workflow onto a single InP nanowire and comparing it to the extensively studied planar devices and superconducting nanowire SPDs, we showed the great potential of nanowire avalanche SPD to outperform their planar counterparts and obtain as superior performance as superconducting nanowires, i.e. achieve a high photon detection efficiency of 70% with a dark count rate less than 20 Hz at non-cryogenic temperature. The proposed workflow is not limited to single-nanowire or nanowire-based device modeling and can be readily extended to more complicated two-/three dimensional structures.

Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays

High-quality quantum light sources are crucial components for the implementation of practical and reliable quantum technologies. The persistent challenge, however, is the lack of scalable and deterministic single photon sources that can be synthesized reproducibly. Here, we present a combination of droplet epitaxy with selective area epitaxy to realize the deterministic growth of single quantum dots in nanowire arrays. By optimization of the single quantum dot growth and the nanowire cavity design, single emissions are effectively coupled with the dominant mode of the nanowires to realize Purcell enhancement. The resonance-enhanced quantum emitter system boasts a brightness of millions of counts per second with nanowatt excitation power, a short radiation lifetime of 350 ± 5 ps, and a high single-photon purity with g(2)(0) value of 0.05 with continuous wave above-band excitation. Finite-difference time-domain (FDTD) simulation results show that the emissions of single quantum dots are coupled into the TM01 mode of the nanowires, giving a Purcell factor ≈ 3. Our technology can be used for creating on-chip scalable single photon sources for future quantum technology applications including quantum networks, quantum computation, and quantum imaging.

Ferri-hydrite: A Novel Electron-Selective Contact Layer for InP Photovoltaic and Photoelectrochemical Cells

Solar energy conversion devices with charge-selective contacts are attracting significant research interest as a cost-effective alternative to homojunction counterparts. This study presents a novel approach for fabricating high-performance solar cells based on InP heterojunctions using a solution-processed ferri-hydrite (Fh) electron-selective contact (ESC). The champion cell efficiency of 16.6% is achieved, which is a significant improvement over those from previous studies using other solution-processed ESC materials. X-ray photoelectron spectroscopy measurements showed that the low conduction band offset at the Fh-InP interface facilitated selective transport of photogenerated electrons from InP. Moreover, the Fh electron-selective contact layer provided an excellent photoelectrochemical half-cell water reduction efficiency of 8.4%. The Fh layer not only selectively extracts photogenerated electrons from InP but also simultaneously serves as a surface protection layer, improving the cell's long-term stability. These results demonstrate the potential of Fh as a low-cost and easily fabricated material for use in high-efficiency photovoltaic and photoelectrochemical devices. Our findings pave the way for further improvements in the efficiency of InP heterojunction solar cells by addressing the losses incurred in the cells.

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Large-area epitaxial growth of III-V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1×109cm-2is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO2/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm-2/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III-V thin films on van der Waals substrates.

Lasing in Zn-doped GaAs nanowires on an iron film

In this work, we demonstrate optically pumped lasing in highly Zn-doped GaAs nanowires (NWs) lying on an iron film. The conically shaped NWs are first covered with an 8 nm thick Al2O3film to prevent atmospheric oxidation and mitigate band-bending effects. Multimode and single-mode lasing have been observed for NWs with a length greater or smaller than 2μm, respectively. Finite difference time domain calculations reveal a weak electric field enhancement in the Al2O3layer at the NW/iron film interface for the lasing modes. The high Zn acceptor concentration in the NWs provides enhanced radiative efficiency and enables lasing on the iron film despite plasmonic losses. Our results open avenues for integrating NW lasers on ferromagnetic substrates to achieve new functionalities, such as magnetic field-induced modulation.

Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers

Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic circuitry. Specifically, III-V materials that are of technological relevance have attracted considerable attention. However, traditional microcavity laser fabrication techniques, including top-down etching and bottom-up catalytic growth, often result in undesirable cavity geometries with poor scalability and reproducibility. Here, we utilize the selective area epitaxy method to deterministically engineer thousands of microring lasers on a single chip. Specifically, we realize a catalyst-free, epitaxial growth of a technologically critical material, InAsP/InP, in a ring-like cavity with embedded multi-quantum-well heterostructures. We elucidate a detailed growth mechanism and leverage the capability to deterministically control the adatom diffusion lengths on selected crystal facets to reproducibly achieve ultrasmooth cavity sidewalls. The engineered devices exhibit a tunable emission wavelength in the telecommunication O-band and show low-threshold lasing with over 80% device efficacy across the chip. Our work marks a significant milestone toward the implementation of a fully integrated III-V materials platform for next-generation high-density integrated photonic and optoelectronic circuits.

An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics applications such as electric vehicles, electricity grids, and renewable energy processing. Despite tremendous efforts to develop the next-generation power devices using emerging ultra-wide bandgap semiconductors, the lack of effective bipolar doping has been a daunting obstacle for achieving the necessary robustness in these devices. Here we report avalanche and surge robustness in a heterojunction formed between the ultra-wide bandgap n-type gallium oxide and the wide-bandgap p-type nickel oxide. Under 1500 V reverse bias, impact ionization initiates in gallium oxide, and the staggered band alignment favors efficient hole removal, enabling a high avalanche current over 50 A. Under forward bias, bipolar conductivity modulation enables the junction to survive over 50 A surge current. Moreover, the asymmetric carrier lifetime makes the high-level carrier injection dominant in nickel oxide, enabling a fast reverse recovery within 15 ns. This heterojunction breaks the fundamental trade-off between robustness and switching speed in conventional homojunctions and removes a key hurdle to advance ultra-wide bandgap semiconductor devices for power industrial applications.

InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection

Detection of short-wave infrared (SWIR) and mid-wave infrared (MWIR) emissions remains challenging despite their importance in many emerging applications, including night vision, space imaging and remote sensing. III-V compound semiconductor materials such as InAs have an ideal band gap covering a spectral regime from near-infrared (NIR), SWIR to MWIR. However, due to their high dark current, InAs photodetectors normally require a low-temperature operation, which has greatly limited their practical applications. Here, we report the engineering of InAs nanowire arrays to achieve efficient photodetection of light at wavelengths ranging from NIR to MWIR (3500 nm). By using selective area metal-organic vapour-phase epitaxy, we optimise the nanowire growth temperature and V/III ratio to achieve wurtzite (WZ)-based InAs nanowire arrays with a high WZ density of ∼67%. Due to the n-type background doping of the InAs nanowires and the p-type InAs substrate used for nanowire growth, a p-n junction is formed, and an ultrawide room-temperature photoresponse ranging from 500 to 3500 nm is obtained under zero bias. It is found that the waveguide modes supported by the InAs nanowires result in a high peak responsivity of 0.44 A W^-1 and a detectivity of 1.25 × 10¹⁰ cm √Hz W^-1 at a wavelength of 1600 nm, a bias voltage of only -0.1 V and a relatively high operating temperature of 150 K. Such a strong light trapping effect in the InAs nanowires also leads to significantly lower reflection compared to that observed in planar photodetectors, and thus strong absorption in the substrate extending the photoresponse up to the InAs bandgap edge of 3500 nm. Our work shows that through careful material optimisation and device design, InAs nanowire arrays are promising for the development of high-performance ultra-broadband infrared photodetectors for wavelengths ranging from NIR, SWIR to MWIR.

Accelerating Industrial-Level NO3 - Electroreduction to Ammonia on Cu Grain Boundary Sites via Heteroatom Doping Strategy

Although the electrocatalytic nitrate reduction reaction (NO₃ ^- RR) is an attractive NH₃ synthesis route, it suffers from low yield due to the lack of efficient catalysts. Here, this work reports a novel grain boundary (GB)-rich Sn-Cu catalyst, derived from in situ electroreduction of Sn-doped CuO nanoflower, for effectively electrochemical converting NO₃ ^- to NH₃ . The optimized Sn_1% -Cu electrode achieves a high NH₃ yield rate of 1.98 mmol h^-1 cm^-2 with an industrial-level current density of -425 mA cm^-2 at -0.55 V versus a reversible hydrogen electrode (RHE) and a maximum Faradaic efficiency of 98.2% at -0.51 V versus RHE, outperforming the pure Cu electrode. In situ Raman and attenuated total reflection Fourier transform infrared spectroscopies reveal the reaction pathway of NO₃ ^- RR to NH₃ by monitoring the adsorption property of reaction intermediates. Density functional theory calculations clarify that the high-density GB active sites and the competitive hydrogen evolution reaction (HER) suppression induced by Sn doping synergistically promote highly active and selective NH₃ synthesis from NO₃ ^- RR. This work paves an avenue for efficient NH₃ synthesis over Cu catalyst by in situ reconstruction of GB sites with heteroatom doping.

Vertical Emitting Nanowire Vector Beam Lasers

Due to the peculiar structured light field with spatially variant polarizations on the same wavefront, vector beams (VBs) have sparked research enthusiasm in developing advanced super-resolution imaging and optical communications techniques. A compact VB nanolaser is intriguing for VB applications in miniaturized photonic integrated circuits. However, determined by the diffraction limit of light, it is a challenge to realize a VB nanolaser in the subwavelength scale because the VB lasing modes should have laterally structured distributions. Here, we demonstrate a VB nanolaser made from a 300 nm thick InGaAs/GaAs nanowire (NW). To select the high-order VB lasing mode, a standing NW as-grown from the selective-area-epitaxial (SAE) growth process is utilized, which has a bottom donut-shaped interface with the silicon oxide growth substrate. With this donut-shaped interface as one of the reflective mirrors of the nanolaser cavity, the VB lasing mode has the lowest threshold. Experimentally, a single-mode VB lasing mode with a donut-shaped amplitude and azimuthally cylindrical polarization distribution is obtained. Together with the high yield and uniformity of the SAE-grown NWs, our work provides a straightforward and scalable path toward cost-effective co-integration of VB nanolasers on potential photonic integrated circuits.

Highly Localized Surface Plasmon Nanolasers via Strong Coupling

Surface plasmons have robust and strong confinement to the light field which is beneficial for the light-matter interaction. Surface plasmon amplification by stimulated emission of radiation (SPACER) has the potential to be integrated on the semiconductor chip as a compact coherent light source, which can play an important role in further extension of Moore's law. In this study, we demonstrate the localized surface plasmon lasing at room temperature in the communication band using metallic nanoholes as the plasmonic nanocavity and InP nanowires as the gain medium. Optimizing laser performance has been demonstrated by coupling between two metallic nanoholes which adds another degree of freedom for manipulating the lasing properties. Our plasmonic nanolasers exhibit lower power consumption, smaller mode volumes, and higher spontaneous emission coupling factors due to enhanced light-matter interactions, which are very promising in the applications of high-density sensing and photonic integrated circuits.

Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique

Nanostructured III-V semiconductors are attractive for solar energy conversion applications owing to their excellent light harvesting and optoelectronic properties. Here, we present a protocol for scalable fabrication of III-V semiconductor nanopillars using a simple and cost-effective top-down approach, combining self-assembled random mask and plasma etching techniques. We describe the deposition of Au/SiO₂ layers to prepare random etch mask. We then detail the fabrication of nanopillars and photocathodes. Finally, we demonstrate III-V semiconductor nanopillars as a photoelectrode for photoelectrochemical water splitting. For complete details on the use and execution of this protocol, please refer to Narangari et al. (2021).¹.

Core-shell GaN/AlGaN nanowires grown by selective area epitaxy

GaN/AlGaN core-shell nanowires with various Al compositions have been grown on GaN nanowire array using selective area metal organic chemical vapor deposition technique. Growth of the AlGaN shell using pure N₂ carrier gas resulted in a smooth surface for the nonpolar m-plane sidewalls with superior optical properties, whereas, growth using a mixed N₂/H₂ carrier gas resulted in a striated surface similar to the commonly observed morphology in the growth of nonpolar III-nitrides. The Al compositions in the AlGaN shells are found to be less than the gas phase input ratio. The systematic reduction in efficiency of Al incorporation in the AlGaN shells with increasing the Al molar flow in the gas phase is attributed to geometric loss, strain-limited Al incorporation, and increased gas phase parasitic reactions. Defect-related luminescence has been observed for AlGaN shells with Al content ≥ 30% and the origin of the defect luminescence has been determined as the (V_III-2O_N)^1- complex. Microstructural analysis of the AlGaN shells revealed that the dominant defects are partial dislocations. Growth of the nonpolar m-plane Al_xGa_1-xN/Al_yGa_1-yN quantum wells on the sidewalls of the GaN nanowires produced arrays with excellent morphology and optical emission, which demonstrated the viability of such a growth scheme for large area efficient ultraviolet LEDs as well as for next generation ultraviolet micro-LEDs.

A Self-Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature

The fast development of the Internet of Things (IoT) has driven an increasing consumer demand for self-powered gas sensors for real-time data collection and autonomous responses in industries such as environmental monitoring, workplace safety, smart cities, and personal healthcare. Despite intensive research and rapid progress in the field, most reported self-powered devices, specifically NO₂ sensors for air pollution monitoring, have limited sensitivity, selectivity, and scalability. Here, a novel photovoltaic self-powered NO₂ sensor is demonstrated based on axial p-i-n homojunction InP nanowire (NW) arrays, that overcome these limitations. The optimized innovative InP NW array device is designed by numerical simulation for insights into sensing mechanisms and performance enhancement. Without a power source, this InP NW sensor achieves an 84% sensing response to 1 ppm NO₂ and records a limit of detection down to the sub-ppb level, with little dependence on the incident light intensity, even under <5% of 1 sun illumination. Based on this great environmental fidelity, the sensor is integrated into a commercial microchip interface to evaluate its performance in the context of dynamic environmental monitoring of motor vehicle exhaust. The results show that compound semiconductor nanowires can form promising self-powered sensing platforms suitable for future mega-scale IoT systems.

Electrically programmable solid-state metasurfaces via flash localised heating

In the last decades, metasurfaces have attracted much attention because of their extraordinary light-scattering properties. However, their inherently static geometry is an obstacle to many applications where dynamic tunability in their optical behaviour is required. Currently, there is a quest to enable dynamic tuning of metasurface properties, particularly with fast tuning rate, large modulation by small electrical signals, solid state and programmable across multiple pixels. Here, we demonstrate electrically tunable metasurfaces driven by thermo-optic effect and flash-heating in silicon. We show a 9-fold change in transmission by <5 V biasing voltage and the modulation rise-time of <625 µs. Our device consists of a silicon hole array metasurface encapsulated by transparent conducting oxide as a localised heater. It allows for video frame rate optical switching over multiple pixels that can be electrically programmed. Some of the advantages of the proposed tuning method compared with other methods are the possibility to apply it for modulation in the visible and near-infrared region, large modulation depth, working at transmission regime, exhibiting low optical loss, low input voltage requirement, and operating with higher than video-rate switching speed. The device is furthermore compatible with modern electronic display technologies and could be ideal for personal electronic devices such as flat displays, virtual reality holography and light detection and ranging, where fast, solid-state and transparent optical switches are required.

Strain-Engineered Multilayer Epitaxial Lift-Off for Cost-Efficient III-V Photovoltaics and Optoelectronics

The efficient removal of epitaxially grown materials from their host substrate has a pivotal role in reducing the cost and material consumption of III-V solar cells and in making flexible thin-film devices. A multilayer epitaxial lift-off process is demonstrated that is scalable in both film size and in the number of released films. The process utilizes in-built, individually engineered epitaxial strain in each film to tailor the bending without the need for external layers to induce strain. Even without external support layers, the films retain good integrity after the lift-off, as evidenced by photoluminescence measurements. The films can be further processed into devices, demonstrated here with the fabrication of cm-scale solar cells using a three-layer lift-off process. Based on the included cost analysis, the solar cells are fabricated with a facile two-step process from the as-released films. The scalable multilayer lift-off process is highly cost-efficient and enables a 4-to-6-fold reduction in the cost with respect to the single-layer epitaxial lift-off process. The results are therefore significant for III-V photovoltaics and any other technologies that rely on thin-film III-V semiconductors.

Integrating a Nanowire Laser in an on-Chip Photonic Waveguide

We report a simple and facile integration strategy of a laser source in passive photonic integrated circuits (PICs) by deterministically embedding semiconductor nanowires (NWs) in waveguides. InP NWs laid on a SiN slab are buried by a polymer layer which also acts as an electron-beam resist. With electron-beam lithography, hybrid polymer-SiN waveguides are formed with precisely embedded NWs. The lasing behavior of the waveguide-embedded NWs is confirmed, and more importantly, the NW lasing mode couples into the hybrid waveguide and forms an in-plane guiding mode. Multiple waveguide-embedded NW lasers are further integrated in complex photonic structures to illustrate that the waveguiding mode supplied by the NW lasers could be manipulated for on-chip signal processing, including power splitting and wavelength-division multiplexing. This integration strategy of an on-chip laser is applicable to other PIC platforms, such as silicon and lithium niobate, and the top cladding layer could be changed by depositing SiN or SiO₂, promising its CMOS compatibility.

Automated Computer Vision-Enabled Manufacturing of Nanowire Devices

We present a high-throughput method for identifying and characterizing individual nanowires and for automatically designing electrode patterns with high alignment accuracy. Central to our method is an optimized machine-readable, lithographically processable, and multi-scale fiducial marker system─dubbed LithoTag─which provides nanostructure position determination at the nanometer scale. A grid of uniquely defined LithoTag markers patterned across a substrate enables image alignment and mapping in 100% of a set of >9000 scanning electron microscopy (SEM) images (>7 gigapixels). Combining this automated SEM imaging with a computer vision algorithm yields location and property data for individual nanowires. Starting with a random arrangement of individual InAs nanowires with diameters of 30 ± 5 nm on a single chip, we automatically design and fabricate >200 single-nanowire devices. For >75% of devices, the positioning accuracy of the fabricated electrodes is within 2 pixels of the original microscopy image resolution. The presented LithoTag method enables automation of nanodevice processing and is agnostic to microscopy modality and nanostructure type. Such high-throughput experimental methodology coupled with data-extensive science can help overcome the characterization bottleneck and improve the yield of nanodevice fabrication, driving the development and applications of nanostructured materials.

In situ grown hierarchical NiO nanosheet@nanowire arrays for high-performance electrochromic energy storage applications

Electrodes with hierarchical nanoarchitectures could promote electrochemical properties due to their largely exposed active sites and quick charge transfer. Herein, in situ grown hierarchical NiO nanosheet@nanowire films are reported by a one-step hydrothermal process followed by heat treatment. The unique NiO hierarchical nanostructures, which are composed of NiO nanowires grown on the surface of a nanosheet array, show improved electrochromic properties such as large optical modulation in different light regions (95% at 550 nm and 50.6% at 1000 nm), fast color change (9.8/5.4 s) and better coloring efficiency (91.2 cm² C^-1) with long-term cycling properties (82.2% after 700 cycles). Simultaneously, the hierarchical nanostructures possess optimal areal capacitance (117.2 mF cm^-2), rate performance and cycling properties. The enhanced electrochemical properties are due to the pretreated seed layer and the synergistic effect between the unique in situ grown ultrathin nanowire and the underlying vertical nanosheet layer which can strengthen the mechanical adhesion of the nanoarray film to the substrate and make both nanosheets and nanowires more exposed to the electrolyte, enhancing charge transfer and mass diffusion. This work provides a promising pathway towards developing high quality electrochromic energy storage devices.

Nanoscale 3D Tomography by In-Flight Fluorescence Spectroscopy of Atoms Sputtered by a Focused Ion Beam

Nanoscale fabrication and characterization techniques critically underpin a vast range of fields, including nanoelectronics and nanobiotechnology. Focused ion beam (FIB) techniques are appealing due to their high spatial resolution and widespread use for processing of nanostructured materials. Here, we introduce FIB-induced fluorescence spectroscopy (FIB-FS) as a nanoscale technique for spectroscopic detection of atoms sputtered by an ion beam. We use semiconductor heterostructures to demonstrate nanoscale lateral and depth resolution and show that it is limited by ion-induced intermixing of nanostructured materials. Sensitivity is demonstrated qualitatively by depth profiling of 3.5, 5, and 8 nm quantum wells and quantitatively by detection of trace-level impurities present at parts-per-million levels. The utility of the FIB-FS technique is demonstrated by characterization of quantum wells and Li-ion batteries. Our work introduces FIB-FS as a high-resolution, high-sensitivity, 3D analysis and tomography technique that combines the versatility of FIB nanofabrication techniques with the power of diffraction-unlimited fluorescence spectroscopy.

TiO2 nanotubular arrays decorated with ultrafine Ag nanoseeds enabling a stable and dendrite-free lithium metal anode

To exploit next-generation high-energy Li metal batteries, it is vitally important to settle the issue of dendrite growth accompanied by interfacial instability of the Li anode. Applying 3D current collectors as hosts for Li deposition emerges as a prospective strategy to achieve uniform Li nucleation and suppress Li dendrites. Herein, well-aligned and spaced TiO₂ nanotube arrays grown on Ti foil and surface decorated with dispersed Ag nanocrystals (Ag@TNTAs/Ti) were constructed and employed as a 3D host for regulating Li stripping/plating behaviors and suppressing Li dendrites, and also relieving volume fluctuation during repetitive Li plating/stripping. Uniform TiO₂ nanotubular structures with a large surface allow fast electron/ion transport and uniform local current density distribution, leading to homogeneous Li growth on the nanotube surface. Moreover, Ag nanocrystals and TiO₂ nanotubes have good Li affinity, which facilitates Li⁺ capture and reduces the Li nucleation barrier, achieving uniform nucleation and growth of Li metal over the 3D Ag@TNTAs/Ti host. As a result, the as-fabricated Ag@TNTAs/Ti electrode exhibits dendrite-free plating morphology and long-term cycle stability with coulombic efficiency maintained over 98.5% even after 1000 cycles at a current density of 1 mA cm^-2 and cycling capacity of 1 mA h cm^-2. In symmetric cells, the Ag@TNTAs/Ti-Li electrode shows a much lower hysteresis of 40 mV over an ultralong cycle period of 2600 h at a current density of 1 mA cm^-2 and cycling capacity of 1 mA h cm^-2. Moreover, the full cell with the Ag@TNTAs/Ti-Li anode and LiFePO₄ cathode achieves a high capacity of 155.2 mA h g^-1 at 0.5C and retains 77.9% capacity with an average CE of ≈99.7% over 200 cycles.

Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y2O3

Due to their excellent electrical characteristics, InAs nanowires (NWs) have great potential as conducting channels in integrated circuits. However, the surface effect and loose native oxide coverage can deteriorate the performance of InAs NW transistors. Y₂O₃, a high-k dielectric with low Gibbs free energy, has been proposed to modify the InAs NW surface. Here, we systematically investigate the effect of Y₂O₃ coating on the performance of InAs NW field-effect transistors (FETs). We first explore the influence of the thermal oxidation process of Y₂O₃ on the performance of back-gated FETs. We then observe that the coverage of Y₂O₃/HfO₂ bilayers on the NW decreases the hysteresis (the smallest value reaches 0.1 V), subthreshold swing (SS, down to 169 mV dec^-1) and on-state resistance R_on, and increases the field-effect mobility μ_FE (up to 4876.1 cm² V^-1 s^-1) and the on-off ratio, mainly owing to the passivation effect on the NW surface. Finally, paired top-gated NW FETs with a Y₂O₃/HfO₂ bilayer and a single layer of HfO₂ dielectric are fabricated and compared. The Y₂O₃/HfO₂ bilayer provides better gate control (SS_min = 113 mV dec^-1) under a smaller gate oxide capacitance, with an interface trap density as low as 1.93 × 10¹² eV^-1 cm^-2. The use of the Y₂O₃/HfO₂ stack provides an effective strategy to enhance the performance of III-V-based transistors for future applications.

Thin SnxNiyOz Films as p-Type Transparent Conducting Oxide and Their Application in Light-Emitting Diodes

The development of good-quality p-type transparent conducting oxides (TCOs) is essential to realize the full potential of TCOs for transparent electronics. This study investigates various optical and electrical properties of Sn_xNi_yO_z under different deposition conditions to achieve high-performance p-type TCOs. We found that a film with 20% O₂/Ar deposited at room temperature exhibits the highest p-type conductivity with a carrier concentration of 2.04 × 10¹⁷ cm^-3, a resistivity of 14.01 Ωcm, and a Hall mobility of 7.7 cm² V^-1 S^-1. We also studied the elemental properties of a Sn_xNi_yO_z film and the band alignment at the Sn_xNi_yO_z/InP interface and found reasonably large values of the conduction band offset (CBO) and valence band offset (VBO). Finally, we demonstrate stable light-emitting diodes (LEDs) with n-InP nanowires (NWs) conformably coated with a p-Sn_xNi_yO_z structure. Several films and devices were fabricated and tested over a span of 6 months, and we observed similar characteristics. This confirms the stability and reliability of the films as well as the reproducibility of the LEDs. We also investigated the temperature-dependent behavior of these LEDs and observed an additional peak due to a zinc blende/wurtzite (ZB/WZ) transition at the InP substrate and NW interface at ∼98 K and below. This study provides promising results of Sn_xNi_yO_z as a potential p-type TCO candidate for applications in electronics and optoelectronics.

Evaluation of prognostic risk models for postoperative pulmonary complications in adult patients undergoing major abdominal surgery: a systematic review and international external validation cohort study

BACKGROUND

Stratifying risk of postoperative pulmonary complications after major abdominal surgery allows clinicians to modify risk through targeted interventions and enhanced monitoring. In this study, we aimed to identify and validate prognostic models against a new consensus definition of postoperative pulmonary complications.

METHODS

We did a systematic review and international external validation cohort study. The systematic review was done in accordance with the Preferred Reporting Items for Systematic Reviews and Meta-Analyses guidelines. We searched MEDLINE and Embase on March 1, 2020, for articles published in English that reported on risk prediction models for postoperative pulmonary complications following abdominal surgery. External validation of existing models was done within a prospective international cohort study of adult patients (≥18 years) undergoing major abdominal surgery. Data were collected between Jan 1, 2019, and April 30, 2019, in the UK, Ireland, and Australia. Discriminative ability and prognostic accuracy summary statistics were compared between models for the 30-day postoperative pulmonary complication rate as defined by the Standardised Endpoints in Perioperative Medicine Core Outcome Measures in Perioperative and Anaesthetic Care (StEP-COMPAC). Model performance was compared using the area under the receiver operating characteristic curve (AUROCC).

FINDINGS

In total, we identified 2903 records from our literature search; of which, 2514 (86·6%) unique records were screened, 121 (4·8%) of 2514 full texts were assessed for eligibility, and 29 unique prognostic models were identified. Nine (31·0%) of 29 models had score development reported only, 19 (65·5%) had undergone internal validation, and only four (13·8%) had been externally validated. Data to validate six eligible models were collected in the international external validation cohort study. Data from 11 591 patients were available, with an overall postoperative pulmonary complication rate of 7·8% (n=903). None of the six models showed good discrimination (defined as AUROCC ≥0·70) for identifying postoperative pulmonary complications, with the Assess Respiratory Risk in Surgical Patients in Catalonia score showing the best discrimination (AUROCC 0·700 [95% CI 0·683-0·717]).

INTERPRETATION

In the pre-COVID-19 pandemic data, variability in the risk of pulmonary complications (StEP-COMPAC definition) following major abdominal surgery was poorly described by existing prognostication tools. To improve surgical safety during the COVID-19 pandemic recovery and beyond, novel risk stratification tools are required.

FUNDING

British Journal of Surgery Society.

Self-frequency-conversion nanowire lasers

Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III-V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths, as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In_0.16Ga_0.84As core/shell NW lasing at 1016 nm, an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation, as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths, multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers, even to the deep ultraviolet and THz range.

Layer-by-Layer Assembly of CeO2-x@C-rGO Nanocomposites and CNTs as a Multifunctional Separator Coating for Highly Stable Lithium-Sulfur Batteries

Commercialization of high-energy Li-S batteries is greatly restricted by their unsatisfactory cycle retention and poor cycling life originated from the notorious "shuttling effect" of lithium polysulfides. Modification of a commercial separator with a functional coating layer is a facile and efficient strategy beyond nanostructured composite cathodes for suppressing polysulfide shuttling. Herein, a multilayered functional CeO_2-x@C-rGO/CNT separator was successfully achieved by alternately depositing conductive carbon nanotubes (CNTs) and synthetic CeO_2-x@C-rGO onto the surface of the commercial separator. The cooperation of multiple components including Ce-MOF-derived CeO_2-x@C, rGO, and CNTs enables the as-built CeO_2-x@C-rGO/CNT separator to perform multifunctions from the separator surface: (i) to hinder the diffusion of polysulfide species through physical blocking or chemical adsorption, (ii) to accelerate the sluggish redox reactions of sulfur species, and (iii) to enhance the conductivity for sulfur re-activation and efficient utilization. Serving as a multilayer and powerful barrier, the CeO_2-x@C-rGO/CNT separator greatly constrains and reutilizes the polysulfide species. Thus, the Li-S battery assembled with the CeO_2-x@C-rGO/CNT separator demonstrates an excellent combination of capacity, rate capability, and cycling performances (an initial capacity of 1107 mA h g^-1 with a low decay rate of 0.060% per cycle over 500 cycles at 1 C, 651 mA h g^-1 at 5 C) together with remarkably mitigated self-discharge and anode corrosion. This work provides guidelines for functional separator design as well as rare-earth material applications for Li-S batteries and other energy storage systems.

Flexible InP-ZnO nanowire heterojunction light emitting diodes

Flexible, substrate-free nanowire (NW) devices are desirable to overcome the extremely challenging task of integrating III-V or III-N semiconductor devices such as LEDs and lasers on a range of optoelectronic circuits or biochips. In this work, we report the demonstration of core-shell p-InP/n-ZnO heterojunction NW array LEDs. The emission from the devices consists of three peaks at room temperature due to conduction band-to-heavy hole band transition, conduction band-to-light hole band transition and recombination at the substrate. At 78 K, an additional peak due to Zn acceptor levels is observed, whereas the peak due to the conduction band-to-light hole band transition quenches. Flexible LEDs are then fabricated by embedding the NW arrays in SU-8 to enable subsequent lift-off from the substrate. Compared with the original on-substrate LED device, broader, red-shifted and multiple peaks are observed from the flexible devices, which may be due to non-uniform strain related effects in the NWs caused by the SU-8 film. A slightly higher series resistance as compared to the on-substrate device and significant Joule heating suggest that good heatsinking is required for these flexible devices. Nevertheless, our study paves a promising way towards flexible and low power LEDs.

Phylogenetics of archerfishes (Toxotidae) and evolution of the toxotid shooting apparatus

Archerfishes (Toxotidae) are variously found in the fresh- and brackish-water environments of Asia Pacific and are well known for their ability to shoot water at terrestrial prey. These shots of water are intended to strike their prey and cause it to fall into the water for capture and consumption. While this behavior is well known, there are competing hypotheses (blowpipe vs. pressure tank hypothesis) of how archerfishes shoot and which oral structures are involved. Current understanding of archerfish shooting structures is largely based on two species, Toxotes chatareus and T. jaculatrix. We do not know if all archerfishes possess the same oral structures to shoot water, if anatomical variation is present within these oral structures, or how these features have evolved. Additionally, there is little information on the evolution of the Toxotidae as a whole, with all previous systematic works focusing on the interrelationships of the family. We first investigate the limits of archerfish species using new and previously published genetic data. Our analyses highlight that the current taxonomy of archerfishes does not conform to the relationships we recover. Toxotes mekongensis and T. siamensis are placed in synonymy of T. chatareus, Toxotes carpentariensis is recognized as a species and removed from synonymy of T. chatareus, and the genus Protoxotes is recognized for T. lorentzi based on the results of our analyses. We then take an integrative approach, using a combined analysis of discrete hard- and soft-tissue morphological characters with genetic data, to construct a phylogeny of the Toxotidae. Using the resulting phylogenetic hypothesis, we then characterize the evolutionary history and anatomical variation within the archerfishes. We discuss the variation in the oral structures and the evolution of the mechanism with respect to the interrelationships of archerfishes, and find that the oral structures of archerfishes support the blowpipe hypothesis but soft-tissue oral structures may also play a role in shooting. Finally, by comparing the morphology of archerfishes to their sister group, we find that the Leptobramidae has relevant shooting features in the oral cavity, suggesting that some components of the archerfish shooting mechanism are examples of co-opted or exapted traits.

Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays

Quasi one-dimensional semiconductor nanowires (NWs) in either arrays or single free-standing forms have shown unique optical properties (i.e., light absorption and emission) differently from their thin film or bulk counterparts, presenting new opportunities for achieving enhanced performance and/or functionalities for optoelectronic device applications. However, there is still a lack of understanding of the absorption properties of vertically standing single NWs within an array environment with light coupling from neighboring NWs within certain distances, due to the challenges in fabrication of such devices. In this article, we present a new approach to fabricate single vertically standing NW photodetectors from ordered InP NW arrays using the focused ion beam technique, to allow direct measurements of optical and electrical properties of single NWs standing in an array. The light-matter interaction and photodetector performance are investigated using both experimental and theoretical methods. The consistent photocurrent and simulated absorption mapping results reveal that the light absorption and thus photoresponse of single NWs are strongly affected by the NW array geometry and related light coupling from their surrounding dielectric environment, due to the large absorption cross section and/or strong light interaction. While the highest light concentration factor (∼19.64) was obtained from the NW in an array with a pitch of 1.5 μm, the higher responsivity per unit cell (equivalent to NW array responsivity) of a single vertical NW photodetector was achieved in an array with a pitch of 0.8 μm, highlighting the importance of array design for practical applications. The insight from our study can provide important guidance to evaluate and optimize the device design of NW arrays for a wide range of optoelectronic device applications.

Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition

The epitaxial growth of III-V nanowires with excellent optoelectronic properties on low-cost, light-weight, and flexible substrates is a key step for the design and engineering of future optoelectronic devices. In our study, GaAs nanowires were grown on synthetic mica, a two-dimensional layered material, via vapor-liquid-solid growth using metal-organic chemical vapor deposition. The effect of basic epitaxial growth parameters such as temperature and V/III ratio on the vertical yield of the nanowires is investigated. A vertical yield of over 60% is achieved at an optimum growth temperature of 400 °C and a V/III ratio 18. The structural properties of the nanowires are investigated using various techniques including scanning electron microscopy, high-resolution transmission electron microscopy, and high-angle annular dark-field imaging. The vertical nanowires grown at a low temperature and a high V/III ratio are found to have a zincblende phase with a [111] B polarity. The optical properties are investigated by photoluminescence (PL) and time-resolved PL measurements. First-principles electronic structure calculations within the framework of density functional theory elucidate the van der Waals nature of the nanowire/mica interface. Our results also show that these nanowires can be easily lifted off the bulk 2D mica template, providing a pathway for flexible nanowire devices.

Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature

Highly sensitive photodetectors with single-photon level detection are one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias are demonstrated. Top-down etched, heavily doped p-type InP nanowires and n-type aluminium-doped zinc oxide (AZO)/zinc oxide (ZnO) carrier-selective contact are used to form a radial p-n junction with a built-in electric field exceeding 3 × 10⁵  V cm^-1  at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway toward low-cost, high-sensitivity, self-powered photodetectors for numerous future applications.

Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires

Optically pumped lasing from highly Zn-doped GaAs nanowires lying on an Au film substrate and from Au-coated nanowires has been demonstrated up to room temperature. The conically shaped GaAs nanowires were first coated with a 5 nm thick Al₂O₃ shell to suppress atmospheric oxidation and band-bending effects. Doping with a high Zn concentration increases both the radiative efficiency and the material gain and leads to lasing up to room temperature. A detailed analysis of the observed lasing behavior, using finite-difference time domain simulations, reveals that the lasing occurs from low loss hybrid modes with predominately photonic character combined with electric field enhancement effects. Achieving low loss lasing from NWs on an Au film and from Au coated nanowires opens new prospects for on-chip integration of nanolasers with new functionalities including electro-optical modulation, conductive shielding, and polarization control.

Controlling the lasing modes in random lasers operating in the Anderson localization regime

Random lasers, which rely on random scattering events unlike traditional Fabry-Pérot cavities, are much simpler and cost-effective to fabricate. However, because of the chaotic fluctuations and instability of the lasing modes, controlling the lasing properties is challenging. In this study, we use random InP nanowire (NW) arrays that operate in the Anderson localization regime with stable modes as the random lasers. We show that by changing the design parameters of the NW arrays, such as filling factor, dimensions of the NWs, degree of randomness, and the size of the array, the properties of the lasing modes including the number of modes, lasing wavelengths, and lasing threshold can be controlled.

3D Tungsten Disulfide/Carbon Nanotube Networks as Separator Coatings and Cathode Additives for Stable and Fast Lithium-Sulfur Batteries

Commercial application of Li-S batteries is greatly restricted by their unsatisfactory cycle retention and poor cycling life originating from the lithium polysulfide (LiPS) shuttling effect and sluggish sulfur redox kinetics. Various strategies have been proposed to boost the performances of Li-S batteries, including nanostructured sulfur composites, functional separators/interlayers, electrode/electrolyte additives, and so on. However, how to combine two or more strategies to efficiently settle these challenging issues confronted by Li-S batteries is in desperate need. Here, we demonstrate a powerful combined strategy of introducing novel 3D WS₂/carbon nanotube (CNT) networks built by hybridization of 1D CNTs with 2D WS₂ into Li-S batteries, simultaneously serving as a functional cathode additive and separator coating. Such 3D WS2/CNTs networks with abundant edge sites, a large active surface, and a fast electron pathway twice perform functions from the cathode side and separator surface: (1) to suppress polysulfide diffusion through a physical barrier and chemical interactions; (2) to accelerate LiPS conversion reactions; and (3) to enhance conductivity for better sulfur reactivation and high utilization. As a result, the as-built WS2/CNTs-incorporated battery configuration achieves a commendable combination of capacity, rate, and cycle stability (1491 mA h g^-1 at 0.2 C, 754 mA h g^-1 at 5 C, and initial capacity of 1069 mA h g^-1 with an ultralow decay rate of 0.040% per cycle over 1000 cycles at 1 C) along with remarkably mitigated anode corrosion and low self-discharge.

Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging

Highly compact, filter-free multispectral photodetectors have important applications in biological imaging, face recognition, and remote sensing. In this work, we demonstrate room-temperature wavelength-selective multipixel photodetectors based on GaAs_0.94Sb_0.06 nanowire arrays grown by metalorganic vapor phase epitaxy, providing more than 10 light detection channels covering both visible and near-infrared ranges without using any optical filters. The nanowire array geometry-related tunable spectral photoresponse has been demonstrated both theoretically and experimentally and shown to be originated from the strong and tunable resonance modes that are supported in the GaAsSb array nanowires. High responsivity and detectivity (up to 44.9 A/W and 1.2 × 10¹² cm √Hz/W at 1 V, respectively) were obtained from the array photodetectors, enabling high-resolution RGB color imaging by applying such a nanowire array based single pixel imager. The results indicate that our filter-free wavelength-selective GaAsSb nanowire array photodetectors are promising candidates for the development of future high-quality multispectral imagers.

Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution

With a band gap close to the Shockley-Quiesser limit and excellent conduction band alignment with the water reduction potential, InP is an ideal photocathode material for photoelectrochemical (PEC) water reduction. Here, we develop facile self-assembled Au nanodots based on dewetting phenomena as a masking technique to fabricate wafer-scale InP nanowires (NWs) via a top-down approach. In addition, we report dual-function wet treatment using sulfur-dissolved oleylamine (S-OA) to remove a plasma-damaged surface in a controlled manner and stabilize InP NWs against surface corrosion in harsh electrolyte solutions. The resulting InP NW photocathodes exhibit an excellent photocurrent density of 33 mA/cm² under 1 sun illumination in 1 M HCl with a highly stabilized performance without needing additional protection layers. Our approach combining large-area NW fabrication and surface engineering synergistically enhances light harvesting and PEC performance and stability, thereby providing a pathway for the development of efficient and durable InP photoelectrodes in a scalable manner.

Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting

Silicon (Si) has been widely investigated as a feasible material for photoelectrochemical (PEC) water splitting. Compared to thick wafer-based Si, thin Si (<50 μm thickness) could concurrently minimize the material usage allowing the development of cost-effective and flexible photoelectrodes for integrable PEC cells. This work presents the design and fabrication of thin Si using crack-assisted layer exfoliation method through detailed optical simulations and a systematic investigation of the exfoliation method. Thin free-standing Si photoanodes with sub-50 μm thickness are demonstrated by incorporating a nickel oxide (NiO_x) thin film as oxygen evolution catalyst, light-trapping surface structure, and a rear-pn⁺ junction, to generate a photo-current density of 23.43 mA/cm² with an onset potential of 1.2 V (vs. RHE). Our work offers a general approach for the development of efficient and cost-effective photoelectrodes with Si films with important implications for flexible and wearable Si-based photovoltaics and (opto)electronic devices.

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Design and fabrication of thin Si photoanode using crack-assisted layer exfoliation

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A systematic investigation of the crack-assisted layer exfoliation method

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Optical simulation on the dependence of photoelectrochemical performance on Si thickness

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Demonstration of thin Si photoanode with notable photoelectrochemical performance

Epitaxially Grown InP Micro-Ring Lasers

In the near future, technological advances driven by the Fourth Industrial Revolution will boost the demand for integrated, power-efficient miniature lasers, which are important for optical data communications and advanced sensing applications. Although top-down fabricated III-V semiconductor micro-disk and micro-ring lasers have been shown to be efficient light sources, challenges such as etching-induced sidewall roughness and poor fabrication scalability have been limiting the potential for high-density on-chip integration. Here, we demonstrate InP micro-ring lasers fabricated with a highly scalable epitaxial growth technique. With an optimized cavity design, the optically pumped micro-ring lasers show efficient room-temperature lasing with a lasing threshold of around 50 μJ cm^-2 per pulse. Remarkably, through comprehensive modeling of the micro-ring laser, we demonstrate lasing mode engineering experimentally by tuning the vertical ring height. Our work is a major step toward realizing the high-density monolithic integration of III-V miniature lasers on submicrometer-scale optoelectronic devices.

Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications

GaAs nanowires are regarded as promising building blocks of future optoelectronic devices. Despite progress, the growth of high optical quality GaAs nanowires is a standing challenge. Understanding the role of twin defects and nanowire facets on the optical emission and minority carrier lifetime of GaAs nanowires is key for the engineering of their optoelectronic properties. Here, we present new insights into the microstructural parameters controlling the optical properties of GaAs nanowires, grown via selective-area metal-organic vapor-phase epitaxy. We observe that these GaAs nanowires have a twinned zinc blende crystal structure with taper-free {110} side facets that result in an ultra-low surface recombination velocity of 3.5 × 104 cm s-1. This is an order of magnitude lower than that reported for defect-free GaAs nanowires grown by the vapor-liquid-solid technique. Using time-resolved photoluminescence and cathodoluminescence measurements, we untangle the local correlation between structural and optical properties demonstrating the superior role of the side facets in determining recombination rates over that played by twin defects. The low surface recombination velocity of these taper-free {110} side facets enable us to demonstrate, for the first time, low-temperature lasing from bare (unpassivated) GaAs nanowires, and also efficient room-temperature lasing after passivation with an AlGaAs shell.

Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers

We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by an excellent NW morphology and InGaAs/GaAs multiquantum disks. At 5 K, a threshold low as 1.6 μJ/cm² per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface nonradiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm² per pulse at room temperature with a high characteristic temperature of 223 K and power output of ∼0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.

Designed Construction of SrTiO3 /SrSO4 /Pt Heterojunctions with Boosted Photocatalytic H2 Evolution Activity

Efficient separation of photogenerated electron-hole pairs is a crucial factor for high-performance photocatalysts. Effective electron-hole separation and migration could be achieved by heterojunctions with suitable band structures. Herein, a porous SrTiO₃ /SrSO₄ heterojunction is prepared by a sol-gel method at room temperature followed by an annealing process. XRD characterization suggests high crystallinity of the heterostructure. A well-defined interface between the two phases is confirmed by high-resolution (HR)TEM. The photocatalytic H₂ evolution productivity of the SrTiO₃ /SrSO₄ heterojunction with Pt as co-catalyst reaches 396.82 μmol g^-1  h^-1 , which is 16 times higher than that of SrTiO₃ /Pt. The boosted photocatalytic activity of SrTiO₃ /SrSO₄ /Pt can be ascribed to the presence of SrSO₄ , which promotes the transfer and migration of photogenerated carriers by forming the heterojunction and porous structure, which provides a large amount of active sites. This novel porous heterostructure brings new ideas for the development of high-efficiency photocatalysts for H₂ release.

Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy

There is a strong demand for III-V nanostructures of different geometries and in the form of interconnected networks for quantum science applications. This can be achieved by selective area epitaxy (SAE) but the understanding of crystal growth in these complicated geometries is still insufficient to engineer the desired shape. Here, the shape evolution and crystal structure of InP nanostructures grown by SAE on InP substrates of different orientations are investigated and a unified understanding to explain these observations is established. A strong correlation between growth direction and crystal phase is revealed. Wurtzite (WZ) and zinc-blende (ZB) phases form along <111>A and <111>B directions, respectively, while crystal phase remains the same along other low-index directions. The polarity induced crystal structure difference is explained by thermodynamic difference between the WZ and ZB phase nuclei on different planes. Growth from the openings is essentially determined by pattern confinement and minimization of the total surface energy, regardless of substrate orientations. A novel type-II WZ/ZB nanomembrane homojunction array is obtained by tailoring growth directions through alignment of the openings along certain crystallographic orientations. The understanding in this work lays the foundation for the design and fabrication of advanced III-V semiconductor devices based on complex geometrical nanostructures.

Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN via various bottom-up synthesis methods and directly through ion implantation, we provide direct evidence that the visible SPEs are carbon related. Room-temperature optically detected magnetic resonance is demonstrated on ensembles of these defects. We perform ion-implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of the simplest 12 carbon-containing defect species suggest the negatively charged [Formula: see text] defect as a viable candidate and predict that out-of-plane deformations make the defect environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to the deterministic engineering of these defects for quantum photonic devices.