Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge

CMOS-RRAM integration holds great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise, leading to computational accuracy loss, increased energy consumption, and overhead by expensive program and verify schemes. We developed a filament-free, bulk switching RRAM technology to address these challenges. We systematically engineered a trilayer metal-oxide stack and investigated the switching characteristics of RRAM with varying thicknesses and oxygen vacancy distributions to achieve reliable bulk switching without any filament formation. We demonstrated bulk switching at megaohm regime with high current nonlinearity, up to 100 levels without compliance current. We developed a neuromorphic compute-in-memory platform and showcased edge computing by implementing a spiking neural network for an autonomous navigation/racing task. Our work addresses challenges posed by existing RRAM technologies and paves the way for neuromorphic computing at the edge under strict size, weight, and power constraints.

Reconfigurable Cascaded Thermal Neuristors for Neuromorphic Computing

While the complementary metal-oxide semiconductor (CMOS) technology is the mainstream for the hardware implementation of neural networks, an alternative route is explored based on a new class of spiking oscillators called "thermal neuristors", which operate and interact solely via thermal processes. Utilizing the insulator-to-metal transition (IMT) in vanadium dioxide, a wide variety of reconfigurable electrical dynamics mirroring biological neurons is demonstrated. Notably, inhibitory functionality is achieved just in a single oxide device, and cascaded information flow is realized exclusively through thermal interactions. To elucidate the underlying mechanisms of the neuristors, a detailed theoretical model is developed, which accurately reflects the experimental results. This study establishes the foundation for scalable and energy-efficient thermal neural networks, fostering progress in brain-inspired computing.

Stochastic transition in synchronized spiking nanooscillators

This work reports that synchronization of Mott material-based nanoscale coupled spiking oscillators can be drastically different from that in conventional harmonic oscillators. We investigated the synchronization of spiking nanooscillators mediated by thermal interactions due to the close physical proximity of the devices. Controlling the driving voltage enables in-phase 1:1 and 2:1 integer synchronization modes between neighboring oscillators. Transition between these two integer modes occurs through an unusual stochastic synchronization regime instead of the loss of spiking coherence. In the stochastic synchronization regime, random length spiking sequences belonging to the 1:1 and 2:1 integer modes are intermixed. The occurrence of this stochasticity is an important factor that must be taken into account in the design of large-scale spiking networks for hardware-level implementation of novel computational paradigms such as neuromorphic and stochastic computing.

Thermal Management in Neuromorphic Materials, Devices, and Networks

Machine learning has experienced unprecedented growth in recent years, often referred to as an "artificial intelligence revolution." Biological systems inspire the fundamental approach for this new computing paradigm: using neural networks to classify large amounts of data into sorting categories. Current machine-learning schemes implement simulated neurons and synapses on standard computers based on a von Neumann architecture. This approach is inefficient in energy consumption, and thermal management, motivating the search for hardware-based systems that imitate the brain. Here, the present state of thermal management of neuromorphic computing technology and the challenges and opportunities of the energy-efficient implementation of neuromorphic devices are considered. The main features of brain-inspired computing and quantum materials for implementing neuromorphic devices are briefly described, the brain criticality and resistive switching-based neuromorphic devices are discussed, the energy and electrical considerations for spiking-based computation are presented, the fundamental features of the brain's thermal regulation are addressed, the physical mechanisms for thermal management and thermoelectric control of materials and neuromorphic devices are analyzed, and challenges and new avenues for implementing energy-efficient computing are described.

Detection of electromagnetic phase transitions using a helical cavity susceptometer

Fast and sensitive phase transition detection is one of the most important requirements for new material synthesis and characterization. For solid-state samples, microwave absorption techniques can be employed for detecting phase transitions because it simultaneously monitors changes in electronic and magnetic properties. However, microwave absorption techniques require expensive high-frequency microwave equipment and bulky hollow cavities. Due to size limitations in conventional instruments, it is challenging to implement these cavities inside a laboratory cryostat. In this work, we designed and built a susceptometer that consists of a small helical cavity embedded into a custom insert of a commercial cryostat. This cavity resonator operated at sub-GHz frequencies is extremely sensitive to changes in material parameters, such as electrical conductivity, magnetization, and electric and magnetic susceptibilities. To demonstrate its operation, we detected superconducting phase transition in Nb and YBa2Cu3O7-δ, metal-insulator transitions in V2O3, ferromagnetic transition in Gd, and magnetic field induced transformation in meta magnetic NiCoMnIn single crystals. This high sensitivity apparatus allows the detection of trace amounts of materials (10-9-cc) undergoing an electromagnetic transition in a very broad temperature (2-400 K) and magnetic field (up to 90 kOe) ranges.

Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves

Recently, evidence for a conducting surface state (CSS) below 19 K was reported for the correlated d-electron small gap semiconductor FeSi. In the work reported herein, the CSS and the bulk phase of FeSi were probed via electrical resistivity ρ measurements as a function of temperature T, magnetic field B to 60 T, and pressure P to 7.6 GPa, and by means of a magnetic field-modulated microwave spectroscopy (MFMMS) technique. The properties of FeSi were also compared with those of the Kondo insulator SmB6 to address the question of whether FeSi is a d-electron analogue of an f-electron Kondo insulator and, in addition, a "topological Kondo insulator" (TKI). The overall behavior of the magnetoresistance of FeSi at temperatures above and below the onset temperature TS = 19 K of the CSS is similar to that of SmB6. The two energy gaps, inferred from the ρ(T) data in the semiconducting regime, increase with pressure up to about 7 GPa, followed by a drop which coincides with a sharp suppression of TS. Several studies of ρ(T) under pressure on SmB6 reveal behavior similar to that of FeSi in which the two energy gaps vanish at a critical pressure near the pressure at which TS vanishes, although the energy gaps in SmB6 initially decrease with pressure, whereas in FeSi they increase with pressure. The MFMMS measurements showed a sharp feature at TS ≈ 19 K for FeSi, which could be due to ferromagnetic ordering of the CSS. However, no such feature was observed at TS ≈ 4.5 K for SmB6.

Unusual Magnetic Hysteresis and Transition between Vortex and Double Pole States Arising from Interlayer Coupling in Diamond-Shaped Nanostructures

Controlling the magnetic ground states at the nanoscale is a long-standing basic research problem and an important issue in magnetic storage technologies. Here, we designed a nanostructured material that exhibits very unusual hysteresis loops due to a transition between vortex and double pole states. Arrays of 700 nm diamond-shaped nanodots consisting of Py(30 nm)/Ru(t_Ru)/Py(30 nm) (Py, permalloy (Ni₈₀Fe₂₀)) trilayers were fabricated by interference lithography and e-beam evaporation. We show that varying the Ru interlayer spacer thickness (t_Ru) governs the interaction between the Py layers. We found this interaction mainly mediated by two mechanisms: magnetostatic interaction that favors antiparallel (antiferromagnetic, AFM) alignment of the Py layers and exchange interaction that oscillates between ferromagnetic (FM) and AFM couplings. For a certain range of Ru thicknesses, FM coupling dominates and forms magnetic vortices in the upper and lower Py layers. For Ru thicknesses at which AFM coupling dominates, the magnetic state in remanence is a double pole structure. Our results showed that the interlayer exchange coupling interaction remains finite even at 4 nm Ru thickness. The magnetic states in remanence, observed by magnetic force microscopy (MFM), are in good agreement with corresponding hysteresis loops obtained by the magneto-optic Kerr effect (MOKE) and micromagnetic simulations.

Wireless Force-Inducing Neuronal Stimulation Mediated by High Magnetic Moment Microdiscs

Noninvasive manipulation of cell signaling is critical in basic neuroscience research and in developing therapies for neurological disorders and psychiatric conditions. Here, the wireless force-induced stimulation of primary neuronal circuits through mechanotransduction mediated by magnetic microdiscs (MMDs) under applied low-intensity and low-frequency alternating magnetic fields (AMFs), is described. MMDs are fabricated by top-down lithography techniques that allow for cost-effective mass production of biocompatible MMDs with high saturation and zero magnetic magnetic moment at remanence. MMDs are utilized as transducers of AMFs into mechanical forces. When MMDs are exposed to primary rat neuronal circuits, their magneto-mechanical actuation triggers the response of specific mechanosensitive ion channels expressed on the cell membranes activating ≈50% of hippocampal and ≈90% of cortical neurons subjected to the treatment. Mechanotransduction is confirmed by the inhibition of mechanosensitive transmembrane channels with Gd³⁺ . Mechanotransduction mediated by MMDs cause no cytotoxic effect to neuronal cultures. This technology fulfills the requirements of cell-type specificity and weak magnetic fields, two limiting factors in the development of noninvasive neuromodulation therapies and clinical equipment design. Moreover, high efficiency and long-lasting stimulations are successfully achieved. This research represents a fundamental step forward for magneto-mechanical control of neural activity using disc-shaped micromaterials with tailored magnetic properties.

Generation of Tunable Stochastic Sequences Using the Insulator-Metal Transition

Probabilistic computing is a paradigm in which data are not represented by stable bits, but rather by the probability of a metastable bit to be in a particular state. The development of this technology has been hindered by the availability of hardware capable of generating stochastic and tunable sequences of "1s" and "0s". The options are currently limited to complex CMOS circuitry and, recently, magnetic tunnel junctions. Here, we demonstrate that metal-insulator transitions can also be used for this purpose. We use an electrical pump/probe protocol and take advantage of the stochastic relaxation dynamics in VO₂ to induce random metallization events. A simple latch circuit converts the metallization sequence into a random stream of 1s and 0s. The resetting pulse in between probes decorrelates successive events, providing a true stochastic digital sequence.

Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V2O3

In solids, strong repulsion between electrons can inhibit their movement and result in a “Mott” metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V₂O₃, the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level.

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.

Inherent stochasticity during insulator-metal transition in VO2

Vanadium dioxide (VO2), which exhibits a near-room-temperature insulator-metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile VO2 at local areas in planar VO2/TiO2 device configuration under external biasing. After each resistive switching, different VO2 monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of VO2 as the key material of neuromorphic computing.

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Many correlated systems feature an insulator-to-metal transition that can be triggered by an electric field. Although it is known that metallization takes place through filament formation, the details of how this process initiates and evolves remain elusive. We use in-operando optical reflectivity to capture the growth dynamics of the metallic phase with space and time resolution. We demonstrate that filament formation is triggered by nucleation at hotspots, with a subsequent expansion over several decades in time. By comparing three case studies (VO₂, V₃O₅, and V₂O₃), we identify the resistivity change across the transition as the crucial parameter governing this process. Our results provide a spatiotemporal characterization of volatile resistive switching in Mott insulators, which is important for emerging technologies, such as optoelectronics and neuromorphic computing.

A quantum material spintronic resonator

In a spintronic resonator a radio-frequency signal excites spin dynamics that can be detected by the spin-diode effect. Such resonators are generally based on ferromagnetic metals and their responses to spin torques. New and richer functionalities can potentially be achieved with quantum materials, specifically with transition metal oxides that have phase transitions that can endow a spintronic resonator with hysteresis and memory. Here we present the spin torque ferromagnetic resonance characteristics of a hybrid metal-insulator-transition oxide/ ferromagnetic metal nanoconstriction. Our samples incorporate [Formula: see text], with Ni, Permalloy ([Formula: see text]) and Pt layers patterned into a nanoconstriction geometry. The first order phase transition in [Formula: see text] is shown to lead to systematic changes in the resonance response and hysteretic current control of the ferromagnetic resonance frequency. Further, the output signal can be systematically varied by locally changing the state of the [Formula: see text] with a dc current. These results demonstrate new spintronic resonator functionalities of interest for neuromorphic computing.

Energy-efficient Mott activation neuron for full-hardware implementation of neural networks

To circumvent the von Neumann bottleneck, substantial progress has been made towards in-memory computing with synaptic devices. However, compact nanodevices implementing non-linear activation functions are required for efficient full-hardware implementation of deep neural networks. Here, we present an energy-efficient and compact Mott activation neuron based on vanadium dioxide and its successful integration with a conductive bridge random access memory (CBRAM) crossbar array in hardware. The Mott activation neuron implements the rectified linear unit function in the analogue domain. The neuron devices consume substantially less energy and occupy two orders of magnitude smaller area than those of analogue complementary metal-oxide semiconductor implementations. The LeNet-5 network with Mott activation neurons achieves 98.38% accuracy on the MNIST dataset, close to the ideal software accuracy. We perform large-scale image edge detection using the Mott activation neurons integrated with a CBRAM crossbar array. Our findings provide a solution towards large-scale, highly parallel and energy-efficient in-memory computing systems for neural networks.

Driving magnetic domains at the nanoscale by interfacial strain-induced proximity

We investigate the local nanoscale changes of the magnetic anisotropy of a Ni film subject to an inverse magnetostrictive effect by proximity to a V2O3 layer. Using temperature-dependent photoemission electron microscopy (PEEM) combined with X-ray magnetic circular dichroism (XMCD), direct images of the Ni spin alignment across the first-order structural phase transition (SPT) of V2O3 were obtained. We find an abrupt temperature-driven reorientation of the Ni magnetic domains across the SPT, which is associated with a large increase of the coercive field. Moreover, angular dependent ferromagnetic resonance (FMR) shows a remarkable change in the magnetic anisotropy of the Ni film across the SPT of V2O3. Micromagnetic simulations based on these results are in quantitative agreement with the PEEM data. Direct measurements of the lateral correlation length of the Ni domains from XMCD images show an increase of almost one order of magnitude at the SPT compared to room temperature, as well as a broad spatial distribution of the local transition temperatures, thus corroborating the phase coexistence of Ni anisotropies caused by the V2O3 SPT. We show that the rearrangement of the Ni domains is due to strain induced by the oxide layers' structural domains across the SPT. Our results illustrate the use of alternative hybrid systems to manipulate magnetic domains at the nanoscale, which allows for engineering of coercive fields for novel data storage architectures.

Controlling Metal-Insulator Transitions in Vanadium Oxide Thin Films by Modifying Oxygen Stoichiometry

Vanadium oxides are strongly correlated materials which display metal-insulator transitions (MITs) as well as various structural and magnetic properties that depend heavily on oxygen stoichiometry. Therefore, it is crucial to precisely control oxygen stoichiometry in these materials, especially in thin films. This work demonstrates a high-vacuum gas evolution technique which allows for the modification of oxygen concentrations in VO_X thin films by carefully tuning the thermodynamic conditions. We were able to control the evolution between VO₂, V₃O₅, and V₂O₃ phases on sapphire substrates, overcoming the narrow phase stability of adjacent Magnéli phases. A variety of annealing routes were found to achieve the desired phases and eventually control the MIT. The pronounced MIT of the transformed films along with the detailed structural investigations based on X-ray diffraction measurements and X-ray photoelectron spectroscopy show that optimal stoichiometry is obtained and stabilized. Using this technique, we find that the thin-film V-O phase diagram differs from that of the bulk material because of strain and finite size effects. Our study demonstrates new pathways to strategically tune the oxygen stoichiometry in complex oxides and provides a road map for understanding the phase stability of VO_X thin films.

Nanoscale Imaging and Control of Volatile and Non-Volatile Resistive Switching in VO2

Control of the metal-insulator phase transition is vital for emerging neuromorphic and memristive technologies. The ability to alter the electrically driven transition between volatile and non-volatile states is particularly important for quantum-materials-based emulation of neurons and synapses. The major challenge of this implementation is to understand and control the nanoscale mechanisms behind these two fundamental switching modalities. Here, in situ X-ray nanoimaging is used to follow the evolution of the nanostructure and disorder in the archetypal Mott insulator VO₂ during an electrically driven transition. Our findings demonstrate selective and reversible stabilization of either the insulating or metallic phases achieved by manipulating the defect concentration. This mechanism enables us to alter the local switching response between volatile and persistent regimes and demonstrates a new possibility for nanoscale control of the resistive switching in Mott materials.

Emerging Magnetic Interactions in van der Waals Heterostructures

Vertical van der Waals (vdWs) heterostructures based on layered materials are attracting interest as a new class of quantum materials, where interfacial charge-transfer coupling can give rise to fascinating strongly correlated phenomena. Transition metal chalcogenides are a particularly exciting material family, including ferromagnetic semiconductors, multiferroics, and superconductors. Here, we report the growth of an organic-inorganic heterostructure by intercalating molecular electron donating bis(ethylenedithio)tetrathiafulvalene into (Li,Fe)OHFeSe, a layered material in which the superconducting ground state results from the intercalation of hydroxide layer. Molecular intercalation in this heterostructure induces a transformation from a paramagnetic to spin-glass-like state that is sensitive to the stoichiometry of molecular donor and an applied magnetic field. Besides, electron-donating molecules reduce the electrical resistivity in the heterostructure and modify its response to laser illumination. This hybrid heterostructure provides a promising platform to study emerging magnetic and electronic behaviors in strongly correlated layered materials.

Robust Coupling between Structural and Electronic Transitions in a Mott Material

The interdependences of different phase transitions in Mott materials are fundamental to the understanding of the mechanisms behind them. One of the most important relations is between the ubiquitous structural and electronic transitions. Using IR spectroscopy, optical reflectivity, and x-ray diffraction, we show that the metal-insulator transition is coupled to the structural phase transition in V_{2}O_{3} films. This coupling persists even in films with widely varying transition temperatures and strains. Our findings are in contrast to recent experimental findings and theoretical predictions. Using V_{2}O_{3} as a model system, we discuss the pitfalls in measurements of the electronic and structural states of Mott materials in general, calling for a critical examination of previous work in this field. Our findings also have important implications for the performance of Mott materials in next-generation neuromorphic computing technology.

Criticality in the Brain: Evidence and Implications for Neuromorphic Computing

We have discovered an unexpected correlation between the operational temperature of the brain and cognitive abilities across a wide variety of animal species. This correlation is extracted from available data in the literature of the temperature range Δ T at which an animal's brain can operate and its encephalization quotient EQ, which can be used as a proxy for cognitive ability. In particular, we found a power-law dependence between Δ T and EQ. These data support the theory that the brain behaves as a critical system where temperature is one of the critical parameters, tuning the performance of the neural network.

Nonequilibrium Phase Precursors during a Photoexcited Insulator-to-Metal Transition in V_{2}O_{3}

Here, we photoinduce and directly observe with x-ray scattering an ultrafast enhancement of the structural long-range order in the archetypal Mott system V_{2}O_{3}. Despite the ultrafast increase in crystal symmetry, the change of unit cell volume occurs an order of magnitude slower and coincides with the insulator-to-metal transition. The decoupling between the two structural responses in the time domain highlights the existence of a transient photoinduced precursor phase, which is distinct from the two structural phases present in equilibrium. X-ray nanoscopy reveals that acoustic phonons trapped in nanoscale twin domains govern the dynamics of the ultrafast transition into the precursor phase, while nucleation and growth of metallic domains dictate the duration of the slower transition into the metallic phase. The enhancement of the long-range order before completion of the electronic transition demonstrates the critical role the nonequilibrium structural phases play during electronic phase transitions in correlated electrons systems.

Dipole-induced exchange bias

The discovery of dipole-induced exchange bias (EB), switching from negative to positive sign, is reported in systems where the antiferromagnet and the ferromagnet are separated by a paramagnetic spacer (AFM-PM-FM). The magnitude and sign of the EB is determined by the cooling field strength and the PM thickness. The same cooling field yields negative EB for thin spacers, and positive EB for thicker ones. The EB decay profile as a function of the spacer thickness, and the change of sign, are attributed to long-ranged dipole coupling. Our model, which accounts quantitatively for the experimental results, ignores the short range interfacial exchange interactions of the usual EB theories. Instead, it retains solely the long range dipole field that allows for the coupling of the FM and AFM across the PM spacer. The experiments allow for novel switching capabilities of long range EB systems, while the theory allows description of the structures where the FM and AFM are not in atomic contact. The results provide a new approach to design novel interacting heterostructures.

Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films

We report on a strain-induced and temperature dependent uniaxial anisotropy in V₂O₃/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V₂O₃; atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the V₂O₃/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. The resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.

Interface-Induced Phenomena in Magnetism

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

Exchange-bias phenomenon: the role of the ferromagnetic spin structure

The exchange bias of antiferromagnetic-ferromagnetic (AFM-FM) bilayers is found to be strongly dependent on the ferromagnetic spin configuration. The widely accepted inverse proportionality of the exchange bias field with the ferromagnetic thickness is broken in FM layers thinner than the FM correlation length. Moreover, an anomalous thermal dependence of both exchange bias field and coercivity is also found. A model based on springlike domain walls parallel to the AFM-FM interface quantitatively accounts for the experimental results and, in particular, for the deviation from the inverse proportionality law. These results reveal the active role the ferromagnetic spin structure plays in AFM-FM hybrids which leads to a new paradigm of the exchange bias phenomenon.

The solid state conversion reaction of epitaxial FeF2(110) thin films with lithium studied by angle-resolved X-ray photoelectron spectroscopy

An epitaxial FeF₂(110) thin film was exposed to Li as a high-purity analogue of a Li-ion battery discharge. The stoichiometry and morphology of the film were then characterized by ARXPS.

Search for superconductivity in micrometeorites

We have developed a very sensitive, highly selective, non-destructive technique for screening inhomogeneous materials for the presence of superconductivity. This technique, based on phase sensitive detection of microwave absorption is capable of detecting 10⁻¹² cc of a superconductor embedded in a non-superconducting, non-magnetic matrix. For the first time, we apply this technique to the search for superconductivity in extraterrestrial samples. We tested approximately 65 micrometeorites collected from the water well at the Amundsen-Scott South pole station and compared their spectra with those of eight reference materials. None of these micrometeorites contained superconducting compounds, but we saw the Verwey transition of magnetite in our microwave system. This demonstrates that we are able to detect electro-magnetic phase transitions in extraterrestrial materials at cryogenic temperatures.

Magnetic field modulated microwave spectroscopy across phase transitions and the search for new superconductors

This article introduces magnetic field modulated microwave spectroscopy (MFMMS) as a unique and high-sensitivity technique for use in the search for new superconductors. MFMMS measures reflected microwave power as a function of temperature. The modulation induced by the external ac magnetic field enables the use of phase locked detection with the consequent sensitivity enhancement. The MFMMS signal across several prototypical structural, magnetic, and electronic transitions is investigated. A literature review on microwave absorption across superconducting transitions is included. We show that MFMMS can be used to detect superconducting transitions selectively with very high sensitivity.

Microscopy image segmentation tool: robust image data analysis

We present a software package called Microscopy Image Segmentation Tool (MIST). MIST is designed for analysis of microscopy images which contain large collections of small regions of interest (ROIs). Originally developed for analysis of porous anodic alumina scanning electron images, MIST capabilities have been expanded to allow use in a large variety of problems including analysis of biological tissue, inorganic and organic film grain structure, as well as nano- and meso-scopic structures. MIST provides a robust segmentation algorithm for the ROIs, includes many useful analysis capabilities, and is highly flexible allowing incorporation of specialized user developed analysis. We describe the unique advantages MIST has over existing analysis software. In addition, we present a number of diverse applications to scanning electron microscopy, atomic force microscopy, magnetic force microscopy, scanning tunneling microscopy, and fluorescent confocal laser scanning microscopy.

Role of thermal heating on the voltage induced insulator-metal transition in VO2

We show that the main mechanism for the dc voltage or dc current induced insulator-metal transition in vanadium dioxide VO(2) is due to local Joule heating and not a purely electronic effect. This "tour de force" experiment was accomplished by using the fluorescence spectra of rare-earth doped micron sized particles as local temperature sensors. As the insulator-metal transition is induced by a dc voltage or dc current, the local temperature reaches the transition temperature indicating that Joule heating plays a predominant role. This has critical implications for the understanding of the dc voltage or dc current induced insulator-metal transition and has a direct impact on applications which use dc voltage or dc current to externally drive the transition.

Europium Doped TiO(2) Hollow Nanoshells: Two-Photon Imaging of Cell Binding

A simple scalable method to fabricate luminescent monodisperse 200 nm europium doped hollow TiO(2) nanoshell particles is reported. Fluorophore reporter, Eu(3+) ions, are incorporated directly in the NS matrix, leaving the surface free for functionalization and the core free for payload encapsulation. Amine functionalized polystyrene beads were used as templates, and the porous walls of europium doped titania nanoshells were synthesized using titanium(IV) t-butoxide and europium(III) nitrate as reactants. X-ray diffraction analysis identified anatase as the predominant titania phase of the rigid nanoshell wall structure, and photoluminescence spectra showed that the Eu(III) doped TiO(2) nanoshells exhibited a red emission at 617 nm due to an atomic f-f transition. Nanoshell interactions with HeLa cervical cancer cells in vitro were visualized using two-photon microscopy of the Eu(III) emission, and studied using a luminescence ratio analysis to assess nanoshell adhesion and endocytosis.

Effect of photodiode angular response on surface plasmon resonance measurements in the Kretschmann-Raether configuration

We study the effect of photodiode angular response on the measurement of surface plasmon resonance (SPR) in metallic thin films using the Kretschmann-Raether configuration. The photodiode signal depends not only on the light intensity but also on the incidence angle. This implies that the photodiode sensitivity changes along the SPR curve. Consequently, the measured SPR spectrum is distorted, thus affecting fits and numerical analyses of SPR curves. We analyze the magnitude of this change, determine when it is significant, and develop a calibration method of the experimental setup which corrects for this type of spectral shape distortions.

Controlling the role of nanopore morphology in capillary condensation

The effect of pore morphology on capillary condensation and evaporation in nanoporous silicon is studied experimentally. A variety of cooperative and local effects are observed in tailored nanopores with well-defined regions by directly probing gas adsorption in each region using optical interferometry. All observations are ascribed to the ability of the nanopore region to access the gas reservoir directly and the nucleation of liquid bridges at local heterogeneities within the nanopore region. These assumptions, consistent with recent simulations, can be extended to any real nanoporous system.

Upper limit to magnetism in LaAlO3/SrTiO3 heterostructures

Using polarized neutron reflectometry we measured the neutron spin-dependent reflectivity from four LaAlO(3)/SrTiO(3) superlattices. Our results imply that the upper limit for the magnetization averaged over the lateral dimensions of the sample induced by an 11 T magnetic field at 1.7 K is less than 2 G. SQUID magnetometry of the neutron superlattice samples sporadically finds an enhanced moment, possibly due to experimental artifacts. These observations set important restrictions on theories which imply a strongly enhanced magnetism at the interface between LaAlO(3) and SrTiO(3).

Effect of Structure on the Anomalous Mechanical Properties of Metallic Superlattices

The mechanical properties of metallic superlattices have been shown to exhibit anomalous properties. Several of the elastic constants are found to exhibit anomalies which are correlated with structural anomalies in lattice mismatched systems which do not form solid solutions. Lattice matched systems which form solid solutions in their thermodynamics phase diagram, show much smaller elastic anomalies and no structural anomalies. Anomalous plastic behavior, on the other hand, seems to be present in both types of superlattices, indicating that the plastic behavior is possibly defect induced. Detailed quantitative structural measurements combined with comprehensive mechanical properties hold the promise of determining the physical origins of the anomalous properties of metallic superlattices.

Phenomenological Explanation of Elastic Anomalies in Superlattices

The experimental fact that measured elastic and structural properties of superlattices are strongly correlated can be understood on the basis of a simple model based on the packing of hard spheres. The model is consistent with features of many models that have been proposed to explain the supermodulus effect, but contrary to previous explanations, it allows predictions for a given pair of constituents to be made. For an arbitrary pair of elements, it predicts the existence or non-existence of an elastic anomaly, and a rough estimate of its magnitude.

Elastic Properties of a Polyimide Film Determined by Brillouin Scattering and Mechanical Techniques

We discuss here the complete determination of the elastic properties of a polyimide film using two experimental techniques. One technique employs the polymer film as a vibrating membrane and allows a direct determination of the ’macroscopic’ biaxial modulus. Brillouin scattering, which measures the elastic properties on a ∼ 100 μ scale, allows for a complete characterization of the elastic behavior. The results obtained by the two techniques are in agreement within the reported error bars.

The fabrication of ordered arrays of exchange biased Ni/FeF2 nanostructures

The fabrication of ordered arrays of exchange biased Ni/FeF(2) nanostructures by focused ion beam lithography is reported. High quality nano-elements, with controlled removal depth and no significant re-deposition, were carved using small ion beam currents (30 pA), moderate dwell times (1 micros) and repeated passages over the same area. Two types of nanostructures were fabricated: square arrays of circular dots with diameters from 125 +/- 8 to 500 +/- 12 nm and periodicities ranging from 200 +/- 8 to 1000 +/- 12 nm, and square arrays of square antidots (207 +/- 8 nm in edge length) with periodicities ranging from 300 +/- 8 to 1200 +/- 12 nm. The arrays were characterized using scanning ion and electron microscopy, and atomic force microscopy. The effect of the patterning on the exchange bias field (i.e., the shift in the hysteresis loop of ferromagnetic Ni due to proximity to antiferromagnetic FeF(2)) was studied using magneto-transport measurements. These high quality nanostructures offer a unique method to address some of the open questions regarding the microscopic origin of exchange bias. This is not only of major relevance in the fabrication and miniaturization of magnetic devices but it is also one of the important proximity phenomena in nanoscience and materials science.

A label-free porous alumina interferometric immunosensor

Anodization of Al is used to produce optically smooth porous alumina (Al(2)O(3)) films with pores approximately 60 nm in diameter and approximately 6 mum deep. The capture protein, protein A, is adsorbed to the pore walls by noncovalent, electrostatic interactions, and thin film interference spectroscopy is used to detect binding of immunoglobulin (IgG). The porous alumina films are stable against corrosion and dissolution in aqueous media at pH 7, allowing quantitative monitoring of steady-state and time-resolved biomolecular binding. The bare porous Al(2)O(3) surface displays a significantly greater affinity for protein A than for IgG. The known species specificity of protein A binding to IgG is confirmed; the protein-A-modified sensor responds to IgG derived from rabbit, but not chicken (IgG/IgY). A "cascaded", or multiprobe sensing approach, is demonstrated, in which a specific target, sheep IgG, is administered to a sample modified with a protein A/rabbit anti-sheep IgG assembly. Binding measurements are confirmed by fluorescence microscopy using fluorescein-labeled IgG.

Analyte chemisorption and sensing on n- and p-channel copper phthalocyanine thin-film transistors

Chemical sensing properties of phthalocyanine thin-film transistors have been investigated using nearly identical n- and p-channel devices. P-type copper phthalocyanine (CuPc) has been modified with fluorine groups to convert the charge carriers from holes to electrons. The sensor responses to the tight binding analyte dimethyl methylphosphonate (DMMP) and weak binding analyte methanol (MeOH) were compared in air and N(2). The results suggest that the sensor response involves counterdoping of pre-adsorbed oxygen (O(2)). A linear dependence of chemical response to DMMP concentration was observed in both n- and p- type devices. For DMMP, there is a factor of 2.5 difference in the chemical sensitivity between n- and p-channel CuPc thin-film transistors, even though it has similar binding strength to n- and p-type CuPc molecules as indicated by the desorption times. The effect is attributed to the difference in the analyte perturbation of electron and hole trap energies in n- and p-type materials.

Evolution of the local superconducting density of states in ErRh4B4 close to the ferromagnetic transition

We present local tunneling spectroscopy experiments in the superconducting and ferromagnetic phases of the reentrant superconductor ErRh4B4. The tunneling conductance curves jump from showing normal to superconducting features within a few mK close to the ferromagnetic transition temperature, with a clear hysteretic behavior. Within the ferromagnetic phase, we do not detect any superconducting correlations. Within the superconducting phase we find a peculiar V-shaped density of states at low energies, which is produced by the magnetically modulated phase that coexists with superconductivity just before ferromagnetism sets in.

Role of the antiferromagnetic bulk spin structure on exchange bias

The cooling field dependence of the exchange bias field in ferromagnet/antiferromagnet (FM/AF) multilayers demonstrates that the bulk AF spin structure plays a crucial role on the origin of exchange bias. FM/AF/FM trilayers were designed to eliminate any interlayer exchange coupling between the FM slabs. By choosing the magnetic cooling field, the AF is ordered below its Néel temperature with the FM layers fully saturated either parallel or antiparallel to each other. The significant difference in the exchange bias field between these two cooling configurations confirms that exchange bias cannot be a purely interfacial effect and that the bulk AF moments play a significant role in pinning the uncompensated spins at the AF/FM interface. This experiment also demonstrates that the mechanism responsible for coercivity enhancement has a different origin and is independent of the process that gives rise to exchange bias.

Gas adsorption and capillary condensation in nanoporous alumina films

Gas adsorption and capillary condensation of organic vapors are studied by optical interferometry, using anodized nanoporous alumina films with controlled geometry (cylindrical pores with diameters in the range of 10-60 nm). The optical response of the film is optimized with respect to the geometric parameters of the pores, for potential performance as a gas sensor device. The average thickness of the adsorbed film at low relative pressures is not affected by the pore size. Capillary evaporation of the liquid from the nanopores occurs at the liquid-vapor equilibrium described by the classical Kelvin equation with a hemispherical meniscus. Due to the almost complete wetting, we can quantitatively describe the condensation for isopropanol using the Cohan model with a cylindrical meniscus in the Kelvin equation. This model describes the observed hysteresis and allows us to use the adsorption branch of the isotherm to calculate the pore size distribution of the sample in good agreement with independent structural measurements. The condensation for toluene lacks reproducibility due to incomplete surface wetting. This exemplifies the relevant role of the fluid-solid (van der Waals) interactions in the hysteretic behavior of capillary condensation.

Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions

The metal-insulator transition of nanoscaled VO2 devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO2 films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.