1
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Cazorla C, Bichelmaier S, Escorihuela-Sayalero C, Íñiguez J, Carrete J, Rurali R. Light-driven dynamical tuning of the thermal conductivity in ferroelectrics. Nanoscale 2024; 16:8335-8344. [PMID: 38591108 DOI: 10.1039/d4nr00100a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Dynamical tuning of the thermal conductivity in crystals, κ, is critical for thermal management applications, as well as for energy harvesting and the development of novel phononic devices able to perform logic operations with phonons. Such a desired κ control can be achieved in functional materials that experience large structural and phonon variations as a result of field-induced phase transformations. However, this approach is only practical within reduced temperature intervals containing zero-bias phase transition points, since otherwise the necessary driving fields become excessively large and the materials' performances are detrimentally affected. Here, based on first-principles calculations, we propose an alternative strategy for dynamically tuning κ that is operative over broad temperature conditions and realizable in a wide class of materials. By shining light on the archetypal perovskite oxide KNbO3, we predict that ultrafast and reversible ferroelectric-to-paraelectric phase transitions are induced, yielding large and anisotropic κ variations (up to ≈30% at T = 300 K). These light-induced thermal transport shifts can take place at temperatures spanning several hundreds of kelvin and are essentially the result of anharmonic effects affecting the phonon lifetimes.
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Affiliation(s)
- Claudio Cazorla
- Departament de Física, Universitat Politècnica de Catalunya, Campus Nord B4-B5, Barcelona 08034, Spain
| | | | | | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - Jesús Carrete
- Institute of Materials Chemistry, TU Wien, A-1060 Vienna, Austria
| | - Riccardo Rurali
- Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain.
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2
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Huang X, Chen X, Li Y, Mangeri J, Zhang H, Ramesh M, Taghinejad H, Meisenheimer P, Caretta L, Susarla S, Jain R, Klewe C, Wang T, Chen R, Hsu CH, Harris I, Husain S, Pan H, Yin J, Shafer P, Qiu Z, Rodrigues DR, Heinonen O, Vasudevan D, Íñiguez J, Schlom DG, Salahuddin S, Martin LW, Analytis JG, Ralph DC, Cheng R, Yao Z, Ramesh R. Manipulating chiral spin transport with ferroelectric polarization. Nat Mater 2024:10.1038/s41563-024-01854-8. [PMID: 38622325 DOI: 10.1038/s41563-024-01854-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Accepted: 03/07/2024] [Indexed: 04/17/2024]
Abstract
A magnon is a collective excitation of the spin structure in a magnetic insulator and can transmit spin angular momentum with negligible dissipation. This quantum of a spin wave has always been manipulated through magnetic dipoles (that is, by breaking time-reversal symmetry). Here we report the experimental observation of chiral spin transport in multiferroic BiFeO3 and its control by reversing the ferroelectric polarization (that is, by breaking spatial inversion symmetry). The ferroelectrically controlled magnons show up to 18% modulation at room temperature. The spin torque that the magnons in BiFeO3 carry can be used to efficiently switch the magnetization of adjacent magnets, with a spin-torque efficiency comparable to the spin Hall effect in heavy metals. Utilizing such controllable magnon generation and transmission in BiFeO3, an all-oxide, energy-scalable logic is demonstrated composed of spin-orbit injection, detection and magnetoelectric control. Our observations open a new chapter of multiferroic magnons and pave another path towards low-dissipation nanoelectronics.
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Affiliation(s)
- Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Xianzhe Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Yuhang Li
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, USA
| | - John Mangeri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Esch/Alzette, Luxembourg
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Maya Ramesh
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | | | - Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Sandhya Susarla
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA
| | - Rakshit Jain
- Department of Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Christoph Klewe
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Tianye Wang
- Department of Physics, University of California, Berkeley, CA, USA
| | - Rui Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Cheng-Hsiang Hsu
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Isaac Harris
- Department of Physics, University of California, Berkeley, CA, USA
| | - Sajid Husain
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Hao Pan
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Jia Yin
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Ziqiang Qiu
- Department of Physics, University of California, Berkeley, CA, USA
| | - Davi R Rodrigues
- Department of Electrical Engineering, Politecnico di Bari, Bari, Italy
| | - Olle Heinonen
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Dilip Vasudevan
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Esch/Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - Sayeef Salahuddin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - James G Analytis
- Department of Physics, University of California, Berkeley, CA, USA
- CIFAR Quantum Materials, CIFAR, Toronto, Ontario, Canada
| | - Daniel C Ralph
- Department of Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Ran Cheng
- Department of Electrical and Computer Engineering, University of California, Riverside, CA, USA
- Department of Physics and Astronomy, University of California, Riverside, CA, USA
| | - Zhi Yao
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Department of Physics, University of California, Berkeley, CA, USA.
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3
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Sánchez-Santolino G, Rouco V, Puebla S, Aramberri H, Zamora V, Cabero M, Cuellar FA, Munuera C, Mompean F, Garcia-Hernandez M, Castellanos-Gomez A, Íñiguez J, Leon C, Santamaria J. A 2D ferroelectric vortex pattern in twisted BaTiO 3 freestanding layers. Nature 2024; 626:529-534. [PMID: 38356067 PMCID: PMC10866709 DOI: 10.1038/s41586-023-06978-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Accepted: 12/14/2023] [Indexed: 02/16/2024]
Abstract
The wealth of complex polar topologies1-10 recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency of the materials to develop a homogeneous polarization and the electric and mechanical boundary conditions imposed on them. Ferroelectric-dielectric interfaces are model systems in which polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure11-14 domains that evolve into vortex-like structures at the nanoscale15-17 level. Although ferroelectricity is known to couple strongly with strain (both homogeneous18 and inhomogeneous19,20), the effect of mechanical constraints21 on thin-film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles provides an opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated with the twisting. Furthermore, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding provides opportunities to create two-dimensional high-density vortex crystals that would enable us to explore previously unknown physical effects and functionalities.
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Affiliation(s)
- G Sánchez-Santolino
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
| | - V Rouco
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
| | - S Puebla
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - H Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
| | - V Zamora
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - M Cabero
- ICTS Centro Nacional de Microscopia Electrónica 'Luis Brú', Universidad Complutense, Madrid, Spain
| | - F A Cuellar
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - C Munuera
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - F Mompean
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - M Garcia-Hernandez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - A Castellanos-Gomez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - J Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
| | - C Leon
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
| | - J Santamaria
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
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4
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Lu H, Kim DJ, Aramberri H, Holzer M, Buragohain P, Dutta S, Schroeder U, Deshpande V, Íñiguez J, Gruverman A, Dubourdieu C. Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf 0.5Zr 0.5O 2. Nat Commun 2024; 15:860. [PMID: 38287021 PMCID: PMC10825184 DOI: 10.1038/s41467-024-44690-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2023] [Accepted: 12/30/2023] [Indexed: 01/31/2024] Open
Abstract
HfO2-based thin films hold huge promise for integrated devices as they show full compatibility with semiconductor technologies and robust ferroelectric properties at nanometer scale. While their polarization switching behavior has been widely investigated, their electromechanical response received much less attention so far. Here, we demonstrate that piezoelectricity in Hf0.5Zr0.5O2 ferroelectric capacitors is not an invariable property but, in fact, can be intrinsically changed by electrical field cycling. Hf0.5Zr0.5O2 capacitors subjected to ac cycling undergo a continuous transition from a positive effective piezoelectric coefficient d33 in the pristine state to a fully inverted negative d33 state, while, in parallel, the polarization monotonically increases. Not only can the sign of d33 be uniformly inverted in the whole capacitor volume, but also, with proper ac training, the net effective piezoresponse can be nullified while the polarization is kept fully switchable. Moreover, the local piezoresponse force microscopy signal also gradually goes through the zero value upon ac cycling. Density functional theory calculations suggest that the observed behavior is a result of a structural transformation from a weakly-developed polar orthorhombic phase towards a well-developed polar orthorhombic phase. The calculations also suggest the possible occurrence of a non-piezoelectric ferroelectric Hf0.5Zr0.5O2. Our experimental findings create an unprecedented potential for tuning the electromechanical functionality of ferroelectric HfO2-based devices.
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Affiliation(s)
- Haidong Lu
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Dong-Jik Kim
- Helmholtz-Zentrum Berlin für Materialien und Energie, Insitute Functional Oxides for Energy-Efficient Information Technology, Hahn Meitner Platz 1, 14109, Berlin, Germany
| | - Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362, Esch/Alzette, Luxembourg
| | - Marco Holzer
- Helmholtz-Zentrum Berlin für Materialien und Energie, Insitute Functional Oxides for Energy-Efficient Information Technology, Hahn Meitner Platz 1, 14109, Berlin, Germany
- Freie Universität Berlin, Physical and Theoretical Chemistry, Arnimallee 22, 14195, Berlin, Germany
| | - Pratyush Buragohain
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Sangita Dutta
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362, Esch/Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Rue du Brill 41, L-4422, Belvaux, Luxembourg
| | - Uwe Schroeder
- NaMLab gGmbH, Noethnitzer Strasse 64 a, 01187, Dresden, Germany
| | - Veeresh Deshpande
- Helmholtz-Zentrum Berlin für Materialien und Energie, Insitute Functional Oxides for Energy-Efficient Information Technology, Hahn Meitner Platz 1, 14109, Berlin, Germany
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362, Esch/Alzette, Luxembourg.
- Department of Physics and Materials Science, University of Luxembourg, Rue du Brill 41, L-4422, Belvaux, Luxembourg.
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.
| | - Catherine Dubourdieu
- Helmholtz-Zentrum Berlin für Materialien und Energie, Insitute Functional Oxides for Energy-Efficient Information Technology, Hahn Meitner Platz 1, 14109, Berlin, Germany.
- Freie Universität Berlin, Physical and Theoretical Chemistry, Arnimallee 22, 14195, Berlin, Germany.
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5
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McCarter MR, Kim KT, Stoica VA, Das S, Klewe C, Donoway EP, Burn DM, Shafer P, Rodolakis F, Gonçalves MAP, Gómez-Ortiz F, Íñiguez J, García-Fernández P, Junquera J, Lovesey SW, van der Laan G, Park SY, Freeland JW, Martin LW, Lee DR, Ramesh R. Structural Chirality of Polar Skyrmions Probed by Resonant Elastic X-Ray Scattering. Phys Rev Lett 2022; 129:247601. [PMID: 36563236 DOI: 10.1103/physrevlett.129.247601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 03/08/2022] [Accepted: 10/23/2022] [Indexed: 06/17/2023]
Abstract
An escalating challenge in condensed-matter research is the characterization of emergent order-parameter nanostructures such as ferroelectric and ferromagnetic skyrmions. Their small length scales coupled with complex, three-dimensional polarization or spin structures makes them demanding to trace out fully. Resonant elastic x-ray scattering (REXS) has emerged as a technique to study chirality in spin textures such as skyrmions and domain walls. It has, however, been used to a considerably lesser extent to study analogous features in ferroelectrics. Here, we present a framework for modeling REXS from an arbitrary arrangement of charge quadrupole moments, which can be applied to nanostructures in materials such as ferroelectrics. With this, we demonstrate how extended reciprocal space scans using REXS with circularly polarized x rays can probe the three-dimensional structure and chirality of polar skyrmions. Measurements, bolstered by quantitative scattering calculations, show that polar skyrmions of mixed chirality coexist, and that REXS allows valuation of relative fractions of right- and left-handed skyrmions. Our quantitative analysis of the structure and chirality of polar skyrmions highlights the capability of REXS for establishing complex topological structures toward future application exploits.
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Affiliation(s)
- Margaret R McCarter
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Kook Tae Kim
- Department of Physics, Soongsil University, Seoul 06978, Korea
| | - Vladimir A Stoica
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, USA
- Department of Materials Science and Engineering, Pennsylvania State University, Pennsylvania 16802, USA
| | - Sujit Das
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | - Christoph Klewe
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Elizabeth P Donoway
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - David M Burn
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, United Kingdom
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Fanny Rodolakis
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Mauro A P Gonçalves
- Institute of Physics of the Czech Academy of Sciences, 18221 Prague 8, Czech Republic
| | - Fernando Gómez-Ortiz
- Departmento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, 39005 Santander, Spain
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxemburg
- Department of Physics and Materials Science, University of Luxembourg, Rue du Brill 41, L-4422 Belvaux, Luxembourg
| | - Pablo García-Fernández
- Departmento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, 39005 Santander, Spain
| | - Javier Junquera
- Departmento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, 39005 Santander, Spain
| | - Stephen W Lovesey
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, United Kingdom
- Department of Physics, Oxford University, Oxford OX1 3PU, United Kingdom
| | - Gerrit van der Laan
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, United Kingdom
| | - Se Young Park
- Department of Physics, Soongsil University, Seoul 06978, Korea
| | - John W Freeland
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Dong Ryeol Lee
- Department of Physics, Soongsil University, Seoul 06978, Korea
| | - Ramamoorthy Ramesh
- Department of Physics, University of California, Berkeley, California 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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6
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Buragohain P, Lu H, Richter C, Schenk T, Kariuki P, Glinsek S, Funakubo H, Íñiguez J, Defay E, Schroeder U, Gruverman A. Quantification of the Electromechanical Measurements by Piezoresponse Force Microscopy. Adv Mater 2022; 34:e2206237. [PMID: 36210741 DOI: 10.1002/adma.202206237] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2022] [Revised: 09/10/2022] [Indexed: 06/16/2023]
Abstract
Piezoresponse force microscopy (PFM) is widely used for characterization and exploration of the nanoscale properties of ferroelectrics. However, quantification of the PFM signal is challenging due to the convolution of various extrinsic and intrinsic contributions. Although quantification of the PFM amplitude signal has received considerable attention, quantification of the PFM phase signal has not been addressed. A properly calibrated PFM phase signal can provide valuable information on the sign of the local piezoelectric coefficient-an important and nontrivial issue for emerging ferroelectrics. In this work, two complementary methodologies to calibrate the PFM phase signal are discussed. The first approach is based on using a standard reference sample with well-known independently measured piezoelectric coefficients, while the second approach exploits the electrostatic sample-cantilever interactions to determine the parasitic phase offset. Application of these methodologies to studies of the piezoelectric behavior in ferroelectric HfO2 -based thin-film capacitors reveals intriguing variations in the sign of the longitudinal piezoelectric coefficient, d33,eff . It is shown that the piezoelectric properties of the HfO2 -based capacitors are inherently sensitive to their thickness, electrodes, as well as deposition methods, and can exhibit wide variations including a d33,eff sign change within a single device.
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Affiliation(s)
- Pratyush Buragohain
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Haidong Lu
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Claudia Richter
- NaMLab gGmbH, 01187, Noethnitzer Strasse 64 a, Dresden, Germany
| | - Tony Schenk
- Ferroelectric Memory GmbH, 01099, Charlotte-Bühler-Str. 12, Dresden, Germany
| | - Pamenas Kariuki
- NaMLab gGmbH, 01187, Noethnitzer Strasse 64 a, Dresden, Germany
| | - Sebastjan Glinsek
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Hiroshi Funakubo
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama, 226-8502, Japan
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Emmanuel Defay
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Uwe Schroeder
- NaMLab gGmbH, 01187, Noethnitzer Strasse 64 a, Dresden, Germany
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
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7
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Graf M, Aramberri H, Zubko P, Íñiguez J. Giant voltage amplification from electrostatically induced incipient ferroelectric states. Nat Mater 2022; 21:1252-1257. [PMID: 36008605 PMCID: PMC9622417 DOI: 10.1038/s41563-022-01332-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2022] [Accepted: 07/12/2022] [Indexed: 06/15/2023]
Abstract
Ferroelectrics subject to suitable electric boundary conditions present a steady negative capacitance response1,2. When the ferroelectric is in a heterostructure, this behaviour yields a voltage amplification in the other elements, which experience a potential difference larger than the one applied, holding promise for low-power electronics3. So far research has focused on verifying this effect and little is known about how to optimize it. Here, we describe an electrostatic theory of ferroelectric/dielectric superlattices, convenient model systems4,5, and show the relationship between the negative permittivity of the ferroelectric layers and the voltage amplification in the dielectric ones. Then, we run simulations of PbTiO3/SrTiO3 superlattices to reveal the factors most strongly affecting the amplification. In particular, we find that giant effects (up to tenfold increases) can be obtained when PbTiO3 is brought close to the so-called 'incipient ferroelectric' state.
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Affiliation(s)
- Mónica Graf
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch/Alzette, Luxembourg
| | - Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch/Alzette, Luxembourg
| | - Pavlo Zubko
- London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London, UK
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch/Alzette, Luxembourg.
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg.
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8
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Aramberri H, Fedorova NS, Íñiguez J. Ferroelectric/paraelectric superlattices for energy storage. Sci Adv 2022; 8:eabn4880. [PMID: 35921413 PMCID: PMC9348786 DOI: 10.1126/sciadv.abn4880] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Accepted: 06/16/2022] [Indexed: 06/09/2023]
Abstract
The polarization response of antiferroelectrics to electric fields is such that the materials can store large energy densities, which makes them promising candidates for energy storage applications in pulsed-power technologies. However, relatively few materials of this kind are known. Here, we consider ferroelectric/paraelectric superlattices as artificial electrostatically engineered antiferroelectrics. Specifically, using high-throughput second-principles calculations, we engineer PbTiO3/SrTiO3 superlattices to optimize their energy storage performance at room temperature (to maximize density and release efficiency) with respect to different design variables (layer thicknesses, epitaxial conditions, and stiffness of the dielectric layer). We obtain results competitive with the state-of-the-art antiferroelectric capacitors and reveal the mechanisms responsible for the optimal properties.
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Affiliation(s)
- Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 5 Avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
- Inter-Institutional Research Group Uni.lu-LIST on Ferroic Materials, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - Natalya S. Fedorova
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 5 Avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
- Inter-Institutional Research Group Uni.lu-LIST on Ferroic Materials, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 5 Avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
- Inter-Institutional Research Group Uni.lu-LIST on Ferroic Materials, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
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9
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Shi Q, Parsonnet E, Cheng X, Fedorova N, Peng RC, Fernandez A, Qualls A, Huang X, Chang X, Zhang H, Pesquera D, Das S, Nikonov D, Young I, Chen LQ, Martin LW, Huang YL, Íñiguez J, Ramesh R. The role of lattice dynamics in ferroelectric switching. Nat Commun 2022; 13:1110. [PMID: 35236832 PMCID: PMC8891289 DOI: 10.1038/s41467-022-28622-z] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Accepted: 02/03/2022] [Indexed: 11/10/2022] Open
Abstract
Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching. Reducing the switching energy of ferroelectric films remains an important goal. Here, the authors elucidate the fundamental role of lattice dynamics in ferroelectric switching on both freestanding BiFeO3 membranes and films clamped to a substrate.
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Affiliation(s)
- Qiwu Shi
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. .,College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China.
| | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA
| | - Natalya Fedorova
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg
| | - Ren-Ci Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Information and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China.,School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Alexander Qualls
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Xue Chang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - David Pesquera
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Sujit Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.,Material Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Dmitri Nikonov
- Components Research, Intel Corporation, Hillsboro, OR, 97142, USA
| | - Ian Young
- Components Research, Intel Corporation, Hillsboro, OR, 97142, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. .,Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg.,Department of Physics and Materials Science, University of Luxembourg, L-4422, Belvaux, Luxembourg
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. .,Department of Physics, University of California, Berkeley, CA, 94720, USA. .,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
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10
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Zang Y, Di C, Geng Z, Yan X, Ji D, Zheng N, Jiang X, Fu H, Wang J, Guo W, Sun H, Han L, Zhou Y, Gu Z, Kong D, Aramberri H, Cazorla C, Íñiguez J, Rurali R, Chen L, Zhou J, Wu D, Lu M, Nie Y, Chen Y, Pan X. Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface. Adv Mater 2022; 34:e2105778. [PMID: 34676925 DOI: 10.1002/adma.202105778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Revised: 10/13/2021] [Indexed: 06/13/2023]
Abstract
Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron-phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO3 membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron-phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron-phonon-mediated thermal coupling, providing a new route to optimize the thermal transport performance in next-generation nanodevices, power electronics, and thermal logic devices.
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Affiliation(s)
- Yipeng Zang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Chen Di
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhiming Geng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xuejun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Dianxiang Ji
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Ningchong Zheng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xingyu Jiang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Hanyu Fu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Jianjun Wang
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Wei Guo
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lu Han
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yunlei Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhengbin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Desheng Kong
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, Esch/Alzette, L-4362, Luxembourg
| | - Claudio Cazorla
- Departament de Física, Universitat Politècnica de Catalunya, Campus Nord B4-B5, Barcelona, E-08034, Spain
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, Esch/Alzette, L-4362, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Riccardo Rurali
- Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra, 08193, Spain
| | - Longqing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Jian Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Di Wu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Minghui Lu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yanfeng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xiaoqing Pan
- Department of Materials Science and Engineering and Department of Physics and Astronomy, University of California, Irvine, 916 Engineering Tower, Irvine, CA, 92697, USA
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11
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Silva JPB, Negrea RF, Istrate MC, Dutta S, Aramberri H, Íñiguez J, Figueiras FG, Ghica C, Sekhar KC, Kholkin AL. Wake-up Free Ferroelectric Rhombohedral Phase in Epitaxially Strained ZrO 2 Thin Films. ACS Appl Mater Interfaces 2021; 13:51383-51392. [PMID: 34694130 DOI: 10.1021/acsami.1c15875] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Zirconia- and hafnia-based thin films have attracted tremendous attention in the past decade because of their unexpected ferroelectric behavior at the nanoscale, which enables the downscaling of ferroelectric devices. The present work reports an unprecedented ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown directly on (111)-Nb:SrTiO3 substrates by ion-beam sputtering. Structural and ferroelectric characterizations reveal (111)-oriented ZrO2 films under epitaxial compressive strain exhibiting switchable ferroelectric polarization of about 20.2 μC/cm2 with a coercive field of 1.5 MV/cm. Moreover, the time-dependent polarization reversal characteristics of Nb:SrTiO3/ZrO2/Au film capacitors exhibit typical bell-shaped curve features associated with the ferroelectric domain reversal and agree well with the nucleation limited switching (NLS) model. The polarization-electric field hysteresis loops point to an activation field comparable to the coercive field. Interestingly, the studied films show ferroelectric behavior per se, without the need to apply the wake-up cycle found in the orthorhombic phase of ZrO2. Overall, the rhombohedral ferroelectric ZrO2 films present technological advantages over the previously studied zirconia- and hafnia-based thin films and may be attractive for nanoscale ferroelectric devices.
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Affiliation(s)
- José P B Silva
- Centre of Physics of Minho and Porto Universities (CF-UM-UP), Campus de Gualtar, Braga 4710-057, Portugal
| | - Raluca F Negrea
- National Institute of Materials Physics, 105 bisAtomistilor, Magurele 077125, Romania
- BCAST, Brunel University London, Uxbridge, Middlesex UB8 3PH, United Kingdom
| | - Marian C Istrate
- National Institute of Materials Physics, 105 bisAtomistilor, Magurele 077125, Romania
| | - Sangita Dutta
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux, Esch/Alzette L-4362, Luxemburg
- Department of Physics and Materials Science, University of Luxembourg, Rue du Brill 41, Belvaux L-4422, Luxembourg
| | - Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux, Esch/Alzette L-4362, Luxemburg
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux, Esch/Alzette L-4362, Luxemburg
- Department of Physics and Materials Science, University of Luxembourg, Rue du Brill 41, Belvaux L-4422, Luxembourg
| | - Fábio G Figueiras
- IFIMUP & Department of Physics and Astronomy, Sciences Faculty, University of Porto, Rua do Campo Alegre, 687, Porto 4169-007, Portugal
| | - Corneliu Ghica
- National Institute of Materials Physics, 105 bisAtomistilor, Magurele 077125, Romania
| | - Koppole C Sekhar
- Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, Thiruvarur 610 101, India
| | - Andrei L Kholkin
- Department of Physics, CICECO-Aveiro Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
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12
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Santamari. Mollá N, Núñez R, Guijarro JA, De. Águila L, López R, Barros I, Sola A, Montero S, Rubio T, Íñiguez J, González P, Alberola P, Álvarez E. P–492 Knowledge about reproductive health among cohort of oocyte donors in Spain. Hum Reprod 2021. [DOI: 10.1093/humrep/deab130.491] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022] Open
Abstract
Abstract
Study question
What degree of reproductive health knowledge have oocyte donors?
Summary answer
The results of this study reveal that although oocyte donors are aware of the risks of possible fertility disorders, reproductive health knowledge is insufficient
What is known already
Sterility affects approximately 15% of the population of reproductive age, that is, young people. However, the information that young people have about fertility is scarce. Gamete donors are a group especially involved in reproductive issues since they help many people to solve their fertility problems and must undergo numerous tests before being accepted as such. However, there are no studies in Spain that deal with the knowledge that young people and, more specifically, donors, have about reproductive health and fertility
Study design, size, duration
A prospective, cross-sectional multicenter study including oocyte donors at ten fertility clinics performing gamete donation treatment in Spain. During a 2-month period (September-October 2020), 63 donors aged between 19 and 35 years old were recruited consecutively and a total of 63 oocyte donors were included as sample population. Most of them (78%) had not donated before
Participants/materials, setting, methods
54% oocyte donors had secondary education and 43% have achieved university studies. Participants anonymously completed a questionnaire containing 41 questions divided into three sections: sociodemographic characteristics (11 items), knowledge on fertility and reproduction (22 items) and with a Likert scale, response to determine general reproductive health information as well as known risks for fertility disorders (8 items).
Besides descriptive statistics, statistical analysis was performed with Chi square test. p < 0.05 was considered significant
Main results and the role of chance
In the survey 96.8% of the participants reported that they had already known the tests for fertility disorders.
The increasing age of the women was correctly assessed by the participants of the study as a decisive risk factor for fertility, but it was found that exact knowledge was lacking: the decrease of a woman’s fertility by 39.7% was stated to occur on average at the age of 35–40 and by 30% at 40–45. Nevertheless, 66% of donors considered that fertility preservation should be carried out before the age of 35.
61.1% of the non-university donors reported that fertility can drop as a woman ages due to the decreasing number and quality of the remaining eggs. Among university donors, this percentage increases to 92,6% (p:0,034). Merely 47% of the participants informed what they understood that ovarian reserve is and 47.6% of donors believed that women create new eggs every month.
Regarding the known risk factors for fertility, lifestyle was mentioned most frequently by all participants (91,2%), followed by chemo/radiotherapy (83,8%) and smoking, alcohol, and drugs (82,4%). Concerning the influence of the body mass index on fertility, differences were found between non-university (61%) and university donors (88,9%) (p:0,012).
Limitations, reasons for caution
Financial compensation has been found to be a motivating factor for oocyte donors and therefore one could question the representativeness of the participating oocyte donors. It would be of great interest to explore the significance of the financial compensation further.
Wider implications of the findings: The present study reveals an existing requirement for information among oocyte donors, which is not only important for the success of prevention plans but also provides a foundation for possible strategies for the prevention of fertility disorder.
Trial registration number
Not applicable
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Affiliation(s)
| | - R Núñez
- UR International Group, Reproduction Unit, Madrid, Spain
| | - J A Guijarro
- Hospital Virgen de la Luz, Gynecology, Cuenca, Spain
| | - L De. Águila
- UR Mediterráneo, Reproduction Unit, Almería, Spain
| | - R López
- UR Vistahermosa, Reproduction Unit, Alicante, Spain
| | - I Barros
- Cefiva, Reproduction Unit, Oviedo, Spain
| | - A Sola
- UR Montpellier, Reproduction Unit, Zaragoza, Spain
| | - S Montero
- UR Puerta del Sur, Reproduction Unit, Jerez de la frontera, Spain
| | - T Rubio
- UR La Vega, Reproduction Unit, Murcia, Spain
| | - J Íñiguez
- UR Imed, Reproduction Unit, Valencia, Spain
| | - P González
- UR Inmaculada, Reproduction Unit, Granada, Spain
| | - P Alberola
- UR Moncloa, Reproduction Unit, Madrid, Spain
| | - E Álvarez
- UR El Ángel, Reproduction Unit, Málaga, Spain
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13
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Das S, Hong Z, Stoica VA, Gonçalves MAP, Shao YT, Parsonnet E, Marksz EJ, Saremi S, McCarter MR, Reynoso A, Long CJ, Hagerstrom AM, Meyers D, Ravi V, Prasad B, Zhou H, Zhang Z, Wen H, Gómez-Ortiz F, García-Fernández P, Bokor J, Íñiguez J, Freeland JW, Orloff ND, Junquera J, Chen LQ, Salahuddin S, Muller DA, Martin LW, Ramesh R. Author Correction: Local negative permittivity and topological phase transition in polar skyrmions. Nat Mater 2021; 20:905. [PMID: 33627832 DOI: 10.1038/s41563-021-00962-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Affiliation(s)
- S Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Department of Physics, University of California, Berkeley, CA, USA.
| | - Z Hong
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
- Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, PA, USA
| | - V A Stoica
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - M A P Gonçalves
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch/Alzette, Luxemburg
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain
- Physics and Materials Science Research Unit, University of Luxembourg, Belvaux, Luxembourg
| | - Y T Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - E Parsonnet
- Department of Physics, University of California, Berkeley, CA, USA
| | - E J Marksz
- National Institute of Standards and Technology, Boulder, CO, USA
| | - S Saremi
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - M R McCarter
- Department of Physics, University of California, Berkeley, CA, USA
| | - A Reynoso
- Department of Physics, University of California, Berkeley, CA, USA
| | - C J Long
- National Institute of Standards and Technology, Boulder, CO, USA
| | - A M Hagerstrom
- National Institute of Standards and Technology, Boulder, CO, USA
| | - D Meyers
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - V Ravi
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - B Prasad
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - H Zhou
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - Z Zhang
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - H Wen
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - F Gómez-Ortiz
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain
| | - P García-Fernández
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain
| | - J Bokor
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - J Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch/Alzette, Luxemburg
- Physics and Materials Science Research Unit, University of Luxembourg, Belvaux, Luxembourg
| | - J W Freeland
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - N D Orloff
- National Institute of Standards and Technology, Boulder, CO, USA
| | - J Junquera
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain
| | - L Q Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - S Salahuddin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - D A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - L W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - R Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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14
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Das S, Hong Z, Stoica VA, Gonçalves MAP, Shao YT, Parsonnet E, Marksz EJ, Saremi S, McCarter MR, Reynoso A, Long CJ, Hagerstrom AM, Meyers D, Ravi V, Prasad B, Zhou H, Zhang Z, Wen H, Gómez-Ortiz F, García-Fernández P, Bokor J, Íñiguez J, Freeland JW, Orloff ND, Junquera J, Chen LQ, Salahuddin S, Muller DA, Martin LW, Ramesh R. Local negative permittivity and topological phase transition in polar skyrmions. Nat Mater 2021; 20:194-201. [PMID: 33046856 DOI: 10.1038/s41563-020-00818-y] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2019] [Accepted: 09/01/2020] [Indexed: 06/11/2023]
Abstract
Topological solitons such as magnetic skyrmions have drawn attention as stable quasi-particle-like objects. The recent discovery of polar vortices and skyrmions in ferroelectric oxide superlattices has opened up new vistas to explore topology, emergent phenomena and approaches for manipulating such features with electric fields. Using macroscopic dielectric measurements, coupled with direct scanning convergent beam electron diffraction imaging on the atomic scale, theoretical phase-field simulations and second-principles calculations, we demonstrate that polar skyrmions in (PbTiO3)n/(SrTiO3)n superlattices are distinguished by a sheath of negative permittivity at the periphery of each skyrmion. This enhances the effective dielectric permittivity compared with the individual SrTiO3 and PbTiO3 layers. Moreover, the response of these topologically protected structures to electric field and temperature shows a reversible phase transition from the skyrmion state to a trivial uniform ferroelectric state, accompanied by large tunability of the dielectric permittivity. Pulsed switching measurements show a time-dependent evolution and recovery of the skyrmion state (and macroscopic dielectric response). The interrelationship between topological and dielectric properties presents an opportunity to simultaneously manipulate both by a single, and easily controlled, stimulus, the applied electric field.
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Affiliation(s)
- S Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Department of Physics, University of California, Berkeley, CA, USA.
| | - Z Hong
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
- Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, PA, USA
| | - V A Stoica
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - M A P Gonçalves
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch/Alzette, Luxemburg
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain
- Physics and Materials Science Research Unit, University of Luxembourg, Belvaux, Luxembourg
| | - Y T Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - E Parsonnet
- Department of Physics, University of California, Berkeley, CA, USA
| | - E J Marksz
- National Institute of Standards and Technology, Boulder, CO, USA
| | - S Saremi
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - M R McCarter
- Department of Physics, University of California, Berkeley, CA, USA
| | - A Reynoso
- Department of Physics, University of California, Berkeley, CA, USA
| | - C J Long
- National Institute of Standards and Technology, Boulder, CO, USA
| | - A M Hagerstrom
- National Institute of Standards and Technology, Boulder, CO, USA
| | - D Meyers
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - V Ravi
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - B Prasad
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - H Zhou
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - Z Zhang
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - H Wen
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - F Gómez-Ortiz
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain
| | - P García-Fernández
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain
| | - J Bokor
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - J Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch/Alzette, Luxemburg
- Physics and Materials Science Research Unit, University of Luxembourg, Belvaux, Luxembourg
| | - J W Freeland
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - N D Orloff
- National Institute of Standards and Technology, Boulder, CO, USA
| | - J Junquera
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain
| | - L Q Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - S Salahuddin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - D A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - L W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - R Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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15
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Urru A, Ricci F, Filippetti A, Íñiguez J, Fiorentini V. A three-order-parameter bistable magnetoelectric multiferroic metal. Nat Commun 2020; 11:4922. [PMID: 33004814 PMCID: PMC7530708 DOI: 10.1038/s41467-020-18664-6] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2020] [Accepted: 09/04/2020] [Indexed: 11/09/2022] Open
Abstract
Using first-principles calculations we predict that the layered-perovskite metal Bi5Mn5O17 is a ferromagnet, ferroelectric, and ferrotoroid which may realize the long sought-after goal of a room-temperature ferromagnetic single-phase multiferroic with large, strongly coupled, primary-order polarization and magnetization. Bi5Mn5O17 has two nearly energy-degenerate ground states with mutually orthogonal vector order parameters (polarization, magnetization, ferrotoroidicity), which can be rotated globally by switching between ground states. Giant cross-coupling magnetoelectric and magnetotoroidic effects, as well as optical non-reciprocity, are thus expected. Importantly, Bi5Mn5O17 should be thermodynamically stable in O-rich growth conditions, and hence experimentally accessible.
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Affiliation(s)
- Andrea Urru
- Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria, Monserrato, I-09042, Cagliari, Italy
- Scuola Superiore Internazionale di Studi Avanzati, Via Bonomea 265, I-34136, Trieste, Italy
| | - Francesco Ricci
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, Chemin des Étoiles 8, B-1348, Louvain-la-Neuve, Belgium
| | - Alessio Filippetti
- Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria, Monserrato, I-09042, Cagliari, Italy
- CNR-IOM, UOS Cagliari, Cittadella Universitaria, Monserrato, I-09042, Cagliari, Italy
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 5 avenue des Hauts-Fourneaux, L-4362, Esch/Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, L-4408, Belvaux, Luxembourg
| | - Vincenzo Fiorentini
- Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria, Monserrato, I-09042, Cagliari, Italy.
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16
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Affiliation(s)
- Beatriz Noheda
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747AG Groningen, Netherlands. .,CogniGron Center, University of Groningen, Nijenborgh 4, 9747AG Groningen, Netherlands
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg.,Department of Physics and Materials Science, University of Luxembourg, Rue du Brill 41, L-4422 Belvaux, Luxembourg
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17
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Prasad B, Huang YL, Chopdekar RV, Chen Z, Steffes J, Das S, Li Q, Yang M, Lin CC, Gosavi T, Nikonov DE, Qiu ZQ, Martin LW, Huey BD, Young I, Íñiguez J, Manipatruni S, Ramesh R. Ultralow Voltage Manipulation of Ferromagnetism. Adv Mater 2020; 32:e2001943. [PMID: 32468701 DOI: 10.1002/adma.202001943] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2020] [Revised: 04/27/2020] [Accepted: 04/28/2020] [Indexed: 06/11/2023]
Abstract
Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1-10 µJ cm-2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm-2 . This work provides a template to achieve attojoule-class nonvolatile memories.
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Affiliation(s)
- Bhagwati Prasad
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA, 94720, USA
| | - Rajesh V Chopdekar
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zuhuang Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - James Steffes
- Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
| | - Sujit Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Qian Li
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Mengmeng Yang
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Chia-Ching Lin
- Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Tanay Gosavi
- Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Dmitri E Nikonov
- Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Zi Qiang Qiu
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA, 94720, USA
| | - Bryan D Huey
- Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
| | - Ian Young
- Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, Esch-sur-Alzette, L-4362, Luxemburg
- Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Sasikanth Manipatruni
- Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, OR, 97124, USA
- Kepler Computing, Hillsboro, OR, 97124, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
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18
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Milesi-Brault C, Toulouse C, Constable E, Aramberri H, Simonet V, de Brion S, Berger H, Paolasini L, Bosak A, Íñiguez J, Guennou M. Archetypal Soft-Mode-Driven Antipolar Transition in Francisite Cu_{3}Bi(SeO_{3})_{2}O_{2}Cl. Phys Rev Lett 2020; 124:097603. [PMID: 32202901 DOI: 10.1103/physrevlett.124.097603] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2019] [Revised: 12/19/2019] [Accepted: 02/11/2020] [Indexed: 06/10/2023]
Abstract
Model materials are precious test cases for elementary theories and provide building blocks for the understanding of more complex cases. Here, we describe the lattice dynamics of the structural phase transition in francisite Cu_{3}Bi(SeO_{3})_{2}O_{2}Cl at 115 K and show that it provides a rare archetype of a transition driven by a soft antipolar phonon mode. In the high-symmetry phase at high temperatures, the soft mode is found at (0,0,0.5) at the Brillouin zone boundary and is measured by inelastic x-ray scattering and thermal diffuse scattering. In the low-symmetry phase, this soft-mode is folded back onto the center of the Brillouin zone as a result of the doubling of the unit cell, and appears as a fully symmetric mode that can be tracked by Raman spectroscopy. On both sides of the transition, the mode energy squared follows a linear behavior over a large temperature range. First-principles calculations reveal that, surprisingly, the flat phonon band calculated for the high-symmetry phase seems incompatible with the displacive character found experimentally. We discuss this unusual behavior in the context of an ideal Kittel model of an antiferroelectric transition.
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Affiliation(s)
- Cosme Milesi-Brault
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 rue du Brill, L-4422 Belvaux, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux, Luxembourg
| | - Constance Toulouse
- Department of Physics and Materials Science, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux, Luxembourg
| | - Evan Constable
- Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria
| | - Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 rue du Brill, L-4422 Belvaux, Luxembourg
| | - Virginie Simonet
- Université Grenoble Alpes, CNRS, Institut Néel, 38000 Grenoble, France
| | - Sophie de Brion
- Université Grenoble Alpes, CNRS, Institut Néel, 38000 Grenoble, France
| | - Helmuth Berger
- Laboratory of Physics of Complex Matter, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Luigi Paolasini
- European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France
| | - Alexei Bosak
- European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 rue du Brill, L-4422 Belvaux, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux, Luxembourg
| | - Mael Guennou
- Department of Physics and Materials Science, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux, Luxembourg
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19
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Torres P, Íñiguez J, Rurali R. Giant Electrophononic Response in PbTiO_{3} by Strain Engineering. Phys Rev Lett 2019; 123:185901. [PMID: 31763887 DOI: 10.1103/physrevlett.123.185901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2019] [Revised: 09/13/2019] [Indexed: 06/10/2023]
Abstract
We demonstrate theoretically how, by imposing epitaxial strain in a ferroelectric perovskite, it is possible to achieve a dynamical control of phonon propagation by means of external electric fields, which yields a giant electrophononic response, i.e., the dependence of the lattice thermal conductivity on external electric fields. Specifically, we study the strain-induced manipulation of the lattice structure and analyze its interplay with the electrophononic response. We show that tensile biaxial strain can drive the system to a regime where the electrical polarization can be effortlessly rotated and thus yield giant electrophononic responses that are at least one order of magnitude larger than in the unstrained system. These results derive directly from the almost divergent behavior of the electrical susceptibility at those critical strains that drive the polarization on the verge of a spontaneous rotation.
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Affiliation(s)
- Pol Torres
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona, Spain
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg
- Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - Riccardo Rurali
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona, Spain
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20
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Belviso F, Claerbout VEP, Comas-Vives A, Dalal NS, Fan FR, Filippetti A, Fiorentini V, Foppa L, Franchini C, Geisler B, Ghiringhelli LM, Groß A, Hu S, Íñiguez J, Kauwe SK, Musfeldt JL, Nicolini P, Pentcheva R, Polcar T, Ren W, Ricci F, Ricci F, Sen HS, Skelton JM, Sparks TD, Stroppa A, Urru A, Vandichel M, Vavassori P, Wu H, Yang K, Zhao HJ, Puggioni D, Cortese R, Cammarata A. Viewpoint: Atomic-Scale Design Protocols toward Energy, Electronic, Catalysis, and Sensing Applications. Inorg Chem 2019; 58:14939-14980. [DOI: 10.1021/acs.inorgchem.9b01785] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Affiliation(s)
- Florian Belviso
- Department of Control Engineering, Czech Technical University in Prague, Technicka 2, 16627 Prague 6, Czech Republic
| | - Victor E. P. Claerbout
- Department of Control Engineering, Czech Technical University in Prague, Technicka 2, 16627 Prague 6, Czech Republic
| | - Aleix Comas-Vives
- Department of Chemistry, Universitat Autònoma de Barcelona, 08193 Cerdanyola del Vallès, Catalonia, Spain
| | - Naresh S. Dalal
- National High Magnet Field Lab, Tallahassee, Florida 32310, United States
- Department of Chemistry & Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Feng-Ren Fan
- Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Alessio Filippetti
- Department of Physics at University of Cagliari, and CNR-IOM, UOS Cagliari, Cittadella Universitaria, I-09042 Monserrato (CA), Italy
| | - Vincenzo Fiorentini
- Department of Physics at University of Cagliari, and CNR-IOM, UOS Cagliari, Cittadella Universitaria, I-09042 Monserrato (CA), Italy
| | - Lucas Foppa
- Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog-Weg 1-5, CH-8093 Zürich, Switzerland
| | - Cesare Franchini
- Faculty of Physics and Center for Computational Materials Science, University of Vienna, Sensengasse 8, A-1090 Vienna, Austria
- Dipartimento di Fisica e Astronomia, Università di Bologna, Bologna 40127, Italy
| | - Benjamin Geisler
- Department of Physics and Center for Nanointegration (CENIDE), Universität Duisburg-Essen, Lotharstr. 1, Duisburg 47057, Germany
| | | | - Axel Groß
- Electrochemical Energy Storage, Helmholtz Institut Ulm, Ulm 89069, Germany
- Institute of Theoretical Chemistry, Ulm University, Ulm 89069, Germany
| | - Shunbo Hu
- Department of Physics, Materials Genome Institute, and International Center of Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai 200444, China
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg
- Physics and Materials Research Unit, University of Luxembourg, Rue du Brill 41, Belvaux L-4422, Luxembourg
| | - Steven Kaai Kauwe
- Materials Science & Engineering Department, University of Utah, 122 Central Campus Drive, Salt Lake City, Utah 84112, United States
| | - Janice L. Musfeldt
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Paolo Nicolini
- Department of Control Engineering, Czech Technical University in Prague, Technicka 2, 16627 Prague 6, Czech Republic
| | - Rossitza Pentcheva
- Department of Physics and Center for Nanointegration (CENIDE), Universität Duisburg-Essen, Lotharstr. 1, Duisburg 47057, Germany
| | - Tomas Polcar
- Department of Control Engineering, Czech Technical University in Prague, Technicka 2, 16627 Prague 6, Czech Republic
| | - Wei Ren
- Department of Physics, Materials Genome Institute, and International Center of Quantum and Molecular Structures, Shanghai University, 99 Shangda Road, Shanghai 200444, China
| | - Fabio Ricci
- Physique Theorique des Materiaux, Universite de Liege, Sart-Tilman B-4000, Belgium
| | - Francesco Ricci
- Institute of Condensed Matter and Nanosciences, Universite Catholique de Louvain, Chemin des Etoiles 8, Louvain-la-Neuve B-1348, Belgium
| | - Huseyin Sener Sen
- Department of Control Engineering, Czech Technical University in Prague, Technicka 2, 16627 Prague 6, Czech Republic
| | - Jonathan Michael Skelton
- Department of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Taylor D. Sparks
- Materials Science & Engineering Department, University of Utah, 122 Central Campus Drive, Salt Lake City, Utah 84112, United States
| | - Alessandro Stroppa
- CNR-SPIN, Department of Physical Sciences and Chemistry, Universita degli Studi dell’Aquila, Via Vetoio, Coppito (AQ) 67010, Italy
| | - Andrea Urru
- Department of Physics at University of Cagliari, and CNR-IOM, UOS Cagliari, Cittadella Universitaria, I-09042 Monserrato (CA), Italy
| | - Matthias Vandichel
- Department of Chemical Sciences and Bernal Institute, Limerick University, Limerick, Ireland
- Department of Chemistry and Material Science and Department of Applied Physics, Aalto University, Espoo 02150, Finland
| | - Paolo Vavassori
- CIC nanoGUNE, San Sebastian E-20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao 48013, Spain
| | - Hua Wu
- Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Ke Yang
- Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
| | - Hong Jian Zhao
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg
- Physics Department and Institute for Engineering, University of Arkansas, Fayetteville, Arkansas 72701,United States
| | - Danilo Puggioni
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Remedios Cortese
- Department of Physics and Chemistry, Università degli Studi di Palermo, Viale delle Scienze ed. 17, Palermo 90128, Italy
| | - Antonio Cammarata
- Department of Control Engineering, Czech Technical University in Prague, Technicka 2, 16627 Prague 6, Czech Republic
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21
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Paillard C, Torun E, Wirtz L, Íñiguez J, Bellaiche L. Photoinduced Phase Transitions in Ferroelectrics. Phys Rev Lett 2019; 123:087601. [PMID: 31491223 DOI: 10.1103/physrevlett.123.087601] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2018] [Revised: 04/10/2019] [Indexed: 06/10/2023]
Abstract
Ferroic materials naturally exhibit a rich number of functionalities, which often arise from thermally, chemically, or mechanically induced symmetry breakings or phase transitions. Based on density functional calculations, we demonstrate here that light can drive phase transitions as well in ferroelectric materials such as the perovskite oxides lead titanate and barium titanate. Phonon analysis and total energy calculations reveal that the polarization tends to vanish under illumination, to favor the emergence of nonpolar phases, potentially antiferroelectric, and exhibiting a tilt of the oxygen octahedra. Strategies to tailor photoinduced phases based on phonon instabilities in the electronic ground state are also discussed.
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Affiliation(s)
- Charles Paillard
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, UMR CNRS 8580, Université Paris-Saclay, 91190 Gif-sur-Yvette, France
| | - Engin Torun
- Physics and Materials Science Research Unit, University of Luxembourg, 162a avenue de la Faïencerie, L-1511 Luxembourg, Luxembourg
| | - Ludger Wirtz
- Physics and Materials Science Research Unit, University of Luxembourg, 162a avenue de la Faïencerie, L-1511 Luxembourg, Luxembourg
| | - Jorge Íñiguez
- Physics and Materials Science Research Unit, University of Luxembourg, 162a avenue de la Faïencerie, L-1511 Luxembourg, Luxembourg
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg
| | - Laurent Bellaiche
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
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22
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Chen L, Xu C, Tian H, Xiang H, Íñiguez J, Yang Y, Bellaiche L. Electric-Field Control of Magnetization, Jahn-Teller Distortion, and Orbital Ordering in Ferroelectric Ferromagnets. Phys Rev Lett 2019; 122:247701. [PMID: 31322382 DOI: 10.1103/physrevlett.122.247701] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2018] [Revised: 04/19/2019] [Indexed: 06/10/2023]
Abstract
Controlling the direction of the magnetization by an electric field in multiferroics that are both ferroelectric and strongly ferromagnetic will open the door to the design of the next generation of spintronics and memory devices. Using first-principles simulations, we report that the discovery that the PbTiO_{3}/LaTiO_{3} (PTO/LTO) superlattice possesses such highly desired control, as evidenced by the electric-field-induced rotation of 90° and even a possible full reversal of its magnetization in some cases. Moreover, such systems also exhibit Jahn-Teller distortions, as well as orbital orderings, that are switchable by the electric field, therefore making PTO/LTO of importance for the tuning of electronic properties too. The origin for such striking electric-field controls of magnetization, Jahn-Teller deformations, and orbital orderings resides in the existence of three different types of energetic coupling: one coupling polarization with antiphase and in-phase oxygen octahedral tiltings, a second one coupling polarization with antiphase oxygen octahedra tilting and Jahn-Teller distortions, and finally a biquadratic coupling between antiphase oxygen octahedral tilting and magnetization.
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Affiliation(s)
- Lan Chen
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Changsong Xu
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Hao Tian
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Hongjun Xiang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 5 avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
- Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - Yurong Yang
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
- Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - L Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
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23
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Lu J, Chen G, Luo W, Íñiguez J, Bellaiche L, Xiang H. Ferroelectricity with Asymmetric Hysteresis in Metallic LiOsO_{3} Ultrathin Films. Phys Rev Lett 2019; 122:227601. [PMID: 31283287 DOI: 10.1103/physrevlett.122.227601] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2018] [Revised: 03/21/2019] [Indexed: 06/09/2023]
Abstract
Bulk LiOsO_{3} was experimentally identified as a "ferroelectric" metal where polar distortions coexist with metallicity [Shi et al., Nat. Mater. 12, 1024 (2013)NMAACR1476-112210.1038/nmat3754]. It is generally believed that polar displacements in a ferroelectric metal cannot be switched by an external electric field. Here, via comprehensive density functional theory calculations, we demonstrate that a two-unit cell-thick LiOsO_{3} thin film exhibits a ferroelectric ground state having an out-of-plane electric dipole moment that can be switched by an external electric field. Moreover, its dipole moment-versus-electric field hysteresis loop is asymmetric because only surface Li ions' displacements are reversed by the external electric field whereas the field-induced force on inner Li atoms is nearly fully screened by itinerant electrons. As a relevant by-product of our study, we also extend the concept of "Born effective charge" to finite metallic systems, and show its usefulness to rationalize the observed effects.
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Affiliation(s)
- Jinlian Lu
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
- Department of Physics, Yancheng Institute of Technology, Yancheng, 224051, China
| | - Gong Chen
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wei Luo
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 5 Avenue des Hauts-Fourneaux, L-4362, Esch/Alzette, Luxembourg
- Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Hongjun Xiang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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24
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Yadav AK, Nguyen KX, Hong Z, García-Fernández P, Aguado-Puente P, Nelson CT, Das S, Prasad B, Kwon D, Cheema S, Khan AI, Hu C, Íñiguez J, Junquera J, Chen LQ, Muller DA, Ramesh R, Salahuddin S. Author Correction: Spatially resolved steady-state negative capacitance. Nature 2019; 568:E13. [PMID: 30971827 DOI: 10.1038/s41586-019-1106-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Abstract
In this Letter, the first name of author Bhagwati Prasad was misspelled Bhagawati. This error has been corrected online.
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Affiliation(s)
- Ajay K Yadav
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Kayla X Nguyen
- Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY, USA
| | - Zijian Hong
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, USA
| | - Pablo García-Fernández
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain
| | | | - Christopher T Nelson
- National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, CA, USA.,Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Sujit Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Bhagwati Prasad
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Daewoong Kwon
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Suraj Cheema
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Asif I Khan
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
| | - Chenming Hu
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Esch/Alzette, Luxembourg
| | - Javier Junquera
- Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Santander, Spain
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, USA
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.,Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Sayeef Salahuddin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.
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25
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Abstract
We present an ab initio simulation of 90° ferroelastic twins that were recently observed in methylammonium lead iodide. There are two inequivalent types of 90° walls that we calculate to act as either electron or hole sinks, which leads us to propose a mechanism for enhancing charge carrier separation in photovoltaic devices. Despite separating nonpolar domains, we show these walls to have a substantial in-plane polarization of ∼6 μC cm-2, due in part to flexoelectricity. We suggest this in turn could allow for the photoferroic effect and create efficient pathways for photocurrents within the wall.
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Affiliation(s)
- Andrew R Warwick
- Department of Materials , Imperial College London , Exhibition Road , London SW7 2AZ , United Kingdom
| | - Jorge Íñiguez
- Materials Research and Technology Department , Luxembourg Institute of Science and Technology , 5 avenue des Hauts-Fourneaux , 4362 Esch/Alzette , Luxembourg
- Physics and Materials Science Research Unit , University of Luxembourg , 41 Rue du Brill , L-4422 Belvaux , Luxembourg
| | - Peter D Haynes
- Department of Materials , Imperial College London , Exhibition Road , London SW7 2AZ , United Kingdom
| | - Nicholas C Bristowe
- Department of Materials , Imperial College London , Exhibition Road , London SW7 2AZ , United Kingdom
- School of Physical Sciences , University of Kent , Canterbury CT2 7NH , United Kingdom
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26
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Pereira Gonçalves MA, Escorihuela-Sayalero C, Garca-Fernández P, Junquera J, Íñiguez J. Theoretical guidelines to create and tune electric skyrmion bubbles. Sci Adv 2019; 5:eaau7023. [PMID: 30793029 PMCID: PMC6377273 DOI: 10.1126/sciadv.aau7023] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2018] [Accepted: 12/28/2018] [Indexed: 05/21/2023]
Abstract
Researchers have long wondered whether ferroelectrics may present topological textures akin to magnetic skyrmions and chiral bubbles, the results being modest thus far. An electric equivalent of a typical magnetic skyrmion would rely on a counterpart of the Dzyaloshinskii-Moriya interaction and seems all but impossible; further, the exotic ferroelectric orders reported to date rely on specific composites and superlattices, limiting their generality and properties. Here, we propose an original approach to write topological textures in simple ferroelectrics in a customary manner. Our second-principles simulations of columnar nanodomains, in prototype material PbTiO3, show we can harness the Bloch-type structure of the domain wall to create objects with the usual skyrmion-defining features as well as unusual ones-including isotopological and topological transitions driven by external fields and temperature-and potentially very small sizes. Our results suggest countless possibilities for creating and manipulating such electric textures, effectively inaugurating the field of topological ferroelectrics.
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Affiliation(s)
- M. A. Pereira Gonçalves
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg
| | - Carlos Escorihuela-Sayalero
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg
| | - Pablo Garca-Fernández
- Departamento de Ciencias de la Tierra y Fsica de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Avenida de los Castros s/n, 39005 Santander, Spain
| | - Javier Junquera
- Departamento de Ciencias de la Tierra y Fsica de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Avenida de los Castros s/n, 39005 Santander, Spain
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg
- Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
- Corresponding author.
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27
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Wei Y, Nukala P, Salverda M, Matzen S, Zhao HJ, Momand J, Everhardt AS, Agnus G, Blake GR, Lecoeur P, Kooi BJ, Íñiguez J, Dkhil B, Noheda B. A rhombohedral ferroelectric phase in epitaxially strained Hf 0.5Zr 0.5O 2 thin films. Nat Mater 2018; 17:1095-1100. [PMID: 30349031 DOI: 10.1038/s41563-018-0196-0] [Citation(s) in RCA: 84] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2018] [Accepted: 09/14/2018] [Indexed: 06/08/2023]
Abstract
Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at the nanoscale into next-generation memory and logic devices. This is because their ferroelectric polarization becomes more robust as the size is reduced, exposing a type of ferroelectricity whose mechanism still remains to be understood. Thin films with increased crystal quality are therefore needed. We report the epitaxial growth of Hf0.5Zr0.5O2 thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 substrates. The films, which are under epitaxial compressive strain and predominantly (111)-oriented, display large ferroelectric polarization values up to 34 μC cm-2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This finding, in conjunction with density functional theory calculations, allows us to propose a compelling model for the formation of the ferroelectric phase. In addition, these results point towards thin films of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.
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Affiliation(s)
- Yingfen Wei
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands
| | - Pavan Nukala
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands
- Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay, Gif-sur-Yvette, France
| | - Mart Salverda
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands
| | - Sylvia Matzen
- Center for Nanoscience and Nanotechnology, CNRS-UMR 9001, Université Paris-Saclay, Palaiseau, France
| | - Hong Jian Zhao
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch/Alzette, Luxembourg
| | - Jamo Momand
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands
| | - Arnoud S Everhardt
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands
| | - Guillaume Agnus
- Center for Nanoscience and Nanotechnology, CNRS-UMR 9001, Université Paris-Saclay, Palaiseau, France
| | - Graeme R Blake
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands
| | - Philippe Lecoeur
- Center for Nanoscience and Nanotechnology, CNRS-UMR 9001, Université Paris-Saclay, Palaiseau, France
| | - Bart J Kooi
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch/Alzette, Luxembourg
| | - Brahim Dkhil
- Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay, Gif-sur-Yvette, France
| | - Beatriz Noheda
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, the Netherlands.
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28
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Li T, Lipatov A, Lu H, Lee H, Lee JW, Torun E, Wirtz L, Eom CB, Íñiguez J, Sinitskii A, Gruverman A. Optical control of polarization in ferroelectric heterostructures. Nat Commun 2018; 9:3344. [PMID: 30131577 PMCID: PMC6104049 DOI: 10.1038/s41467-018-05640-4] [Citation(s) in RCA: 45] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2017] [Accepted: 07/12/2018] [Indexed: 11/09/2022] Open
Abstract
In the ferroelectric devices, polarization control is usually accomplished by application of an electric field. In this paper, we demonstrate optically induced polarization switching in BaTiO3-based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS2 as a top electrode. This effect is attributed to the redistribution of the photo-generated carriers and screening charges at the MoS2/BaTiO3 interface. Specifically, a two-step process, which involves formation of intra-layer excitons during light absorption followed by their decay into inter-layer excitons, results in the positive charge accumulation at the interface forcing the polarization reversal from the upward to the downward direction. Theoretical modeling of the MoS2 optical absorption spectra with and without the applied electric field provides quantitative support for the proposed mechanism. It is suggested that the discovered effect is of general nature and should be observable in any heterostructure comprising a ferroelectric and a narrow gap semiconductor.
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Affiliation(s)
- Tao Li
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA
| | - Alexey Lipatov
- Department of Chemistry, University of Nebraska, Lincoln, NE, 68588, USA
| | - Haidong Lu
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA
| | - Hyungwoo Lee
- Department of Materials Science and Engineering, University of Wisconsin, Madison, WI, 53706, USA
| | - Jung-Woo Lee
- Department of Materials Science and Engineering, University of Wisconsin, Madison, WI, 53706, USA
| | - Engin Torun
- Physics and Materials Science Research Unit, University of Luxembourg, L-1511, Luxembourg, Luxembourg
| | - Ludger Wirtz
- Physics and Materials Science Research Unit, University of Luxembourg, L-1511, Luxembourg, Luxembourg
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin, Madison, WI, 53706, USA
| | - Jorge Íñiguez
- Department of Materials Research and Technology, Luxembourg Institute of Science and Technology, 5 Avenue des Hauts-Fourneaux, L-4362, Esch/Alzette, Luxembourg
| | | | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA.
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29
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Gu T, Scarbrough T, Yang Y, Íñiguez J, Bellaiche L, Xiang HJ. Cooperative Couplings between Octahedral Rotations and Ferroelectricity in Perovskites and Related Materials. Phys Rev Lett 2018; 120:197602. [PMID: 29799252 DOI: 10.1103/physrevlett.120.197602] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2017] [Revised: 01/18/2018] [Indexed: 06/08/2023]
Abstract
The structure of ABO_{3} perovskites is dominated by two types of unstable modes, namely, the oxygen octahedral rotation (AFD) and ferroelectric (FE) mode. It is generally believed that such AFD and FE modes tend to compete and suppress each other. Here we use first-principles methods to show that a dual nature of the FE-AFD coupling, which turns from competitive to cooperative as the AFD mode strengthens, occurs in numerous perovskite oxides. We provide a unified model of such a dual interaction by introducing novel high-order coupling terms and explain the atomistic origin of the resulting new form of ferroelectricity in terms of universal steric mechanisms. We also predict that such a novel form of ferroelectricity leads to atypical behaviors, such as an enhancement of all the three Cartesian components of the electric polarization under hydrostatic pressure and compressive epitaxial strain.
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Affiliation(s)
- Teng Gu
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China
| | - Timothy Scarbrough
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Yurong Yang
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - L Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - H J Xiang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
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30
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Le Gal Y, Roisnel T, Auban-Senzier P, Bellec N, Íñiguez J, Canadell E, Lorcy D. Stable Metallic State of a Neutral-Radical Single-Component Conductor at Ambient Pressure. J Am Chem Soc 2018; 140:6998-7004. [DOI: 10.1021/jacs.8b03714] [Citation(s) in RCA: 41] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Yann Le Gal
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000 Rennes, France
| | - Thierry Roisnel
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000 Rennes, France
| | - Pascale Auban-Senzier
- Laboratoire de Physique des Solides UMR 8502, CNRS-Université de Paris-Sud, Bat 510, F-91405 Orsay Cedex, France
| | - Nathalie Bellec
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000 Rennes, France
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 5 Avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
| | - Enric Canadell
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, E-08193 Bellaterra, Spain
| | - Dominique Lorcy
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000 Rennes, France
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31
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Catalano S, Gibert M, Fowlie J, Íñiguez J, Triscone JM, Kreisel J. Rare-earth nickelates RNiO 3: thin films and heterostructures. Rep Prog Phys 2018; 81:046501. [PMID: 29266004 DOI: 10.1088/1361-6633/aaa37a] [Citation(s) in RCA: 77] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
This review stands in the larger framework of functional materials by focussing on heterostructures of rare-earth nickelates, described by the chemical formula RNiO3 where R is a trivalent rare-earth R = La, Pr, Nd, Sm, …, Lu. Nickelates are characterized by a rich phase diagram of structural and physical properties and serve as a benchmark for the physics of phase transitions in correlated oxides where electron-lattice coupling plays a key role. Much of the recent interest in nickelates concerns heterostructures, that is single layers of thin film, multilayers or superlattices, with the general objective of modulating their physical properties through strain control, confinement or interface effects. We will discuss the extensive studies on nickelate heterostructures as well as outline different approaches to tuning and controlling their physical properties and, finally, review application concepts for future devices.
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Affiliation(s)
- S Catalano
- DQMP, Université de Genève, 24 Quai Ernest-Ansermet, 1211 Geneva, Switzerland
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32
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Nahas Y, Akbarzadeh A, Prokhorenko S, Prosandeev S, Walter R, Kornev I, Íñiguez J, Bellaiche L. Corrigendum: Microscopic origins of the large piezoelectricity of leadfree (Ba,Ca)(Zr,Ti)O 3. Nat Commun 2017; 8:16172. [PMID: 29068005 PMCID: PMC5656754 DOI: 10.1038/ncomms16172] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Download PDF] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022] Open
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33
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Damodaran AR, Clarkson JD, Hong Z, Liu H, Yadav AK, Nelson CT, Hsu SL, McCarter MR, Park KD, Kravtsov V, Farhan A, Dong Y, Cai Z, Zhou H, Aguado-Puente P, García-Fernández P, Íñiguez J, Junquera J, Scholl A, Raschke MB, Chen LQ, Fong DD, Ramesh R, Martin LW. Phase coexistence and electric-field control of toroidal order in oxide superlattices. Nat Mater 2017; 16:1003-1009. [PMID: 28783161 DOI: 10.1038/nmat4951] [Citation(s) in RCA: 64] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2016] [Accepted: 06/28/2017] [Indexed: 06/07/2023]
Abstract
Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO3/SrTiO3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a1/a2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Our findings suggest new cross-coupled functionalities.
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Affiliation(s)
- A R Damodaran
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - J D Clarkson
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Z Hong
- Department of Materials Science and Engineering, Pennsylvania State University, State College, Pennsylvania 16802, USA
| | - H Liu
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - A K Yadav
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- School of Electrical Engineering and Computer Science, UC Berkeley, Berkeley, California 94720, USA
| | - C T Nelson
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - S-L Hsu
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - M R McCarter
- Department of Physics, University of California, Berkeley, Berkeley, California 94720, USA
| | - K-D Park
- Department of Physics, Department of Chemistry, and JILA, University of Colorado, Boulder, Boulder, Colorado 80309, USA
| | - V Kravtsov
- Department of Physics, Department of Chemistry, and JILA, University of Colorado, Boulder, Boulder, Colorado 80309, USA
| | - A Farhan
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Y Dong
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Z Cai
- X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - H Zhou
- X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - P Aguado-Puente
- Centro de Física de Materiales, Universidad del País Vasco, 20018 San Sebastián, Spain
- Donostia International Physics Center, 20018 San Sebastián, Spain
| | - P García-Fernández
- Departmento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, avenida de los Castros s/n, 39005 Santander, Spain
| | - J Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
| | - J Junquera
- Departmento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, avenida de los Castros s/n, 39005 Santander, Spain
| | - A Scholl
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - M B Raschke
- Department of Physics, Department of Chemistry, and JILA, University of Colorado, Boulder, Boulder, Colorado 80309, USA
| | - L-Q Chen
- Department of Materials Science and Engineering, Pennsylvania State University, State College, Pennsylvania 16802, USA
| | - D D Fong
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - R Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Department of Physics, University of California, Berkeley, Berkeley, California 94720, USA
| | - L W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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34
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Nahas Y, Akbarzadeh A, Prokhorenko S, Prosandeev S, Walter R, Kornev I, Íñiguez J, Bellaiche L. Microscopic origins of the large piezoelectricity of leadfree (Ba,Ca)(Zr,Ti)O 3. Nat Commun 2017. [PMID: 28631724 PMCID: PMC5481827 DOI: 10.1038/ncomms15944] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022] Open
Abstract
In light of directives around the world to eliminate toxic materials in various technologies, finding lead-free materials with high piezoelectric responses constitutes an important current scientific goal. As such, the recent discovery of a large electromechanical conversion near room temperature in (1-x)Ba(Zr0.2Ti0.8)O3-x(Ba0.7Ca0.3)TiO3 compounds has directed attention to understanding its origin. Here, we report the development of a large-scale atomistic scheme providing a microscopic insight into this technologically promising material. We find that its high piezoelectricity originates from the existence of large fluctuations of polarization in the orthorhombic state arising from the combination of a flat free-energy landscape, a fragmented local structure, and the narrow temperature window around room temperature at which this orthorhombic phase is the equilibrium state. In addition to deepening the current knowledge on piezoelectricity, these findings have the potential to guide the design of other lead-free materials with large electromechanical responses.
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Affiliation(s)
- Yousra Nahas
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Alireza Akbarzadeh
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Sergei Prokhorenko
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Sergey Prosandeev
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA.,Research Institute of Physics, Southern Federal University, Rostov on Don 344090, Russia
| | - Raymond Walter
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Igor Kornev
- Laboratoire Structures, Propriétés et Modélisation des Solides, Université Paris-Saclay, CentraleSupélec, CNRS-UMR8580, Grande Voie des Vignes, 92295 Châtenay-Malabry Cedex, France
| | - Jorge Íñiguez
- Department of Materials Research and Technology, Luxembourg Institute of Science and Technology, (LIST), 5 avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
| | - L Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
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35
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Cazorla C, Diéguez O, Íñiguez J. Multiple structural transitions driven by spin-phonon couplings in a perovskite oxide. Sci Adv 2017; 3:e1700288. [PMID: 28695196 PMCID: PMC5493420 DOI: 10.1126/sciadv.1700288] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/27/2017] [Accepted: 05/12/2017] [Indexed: 06/07/2023]
Abstract
Spin-phonon interactions are central to many interesting phenomena, ranging from superconductivity to magnetoelectric effects. However, they are believed to have a negligible influence on the structural behavior of most materials. For example, magnetic perovskite oxides often undergo structural transitions accompanied by magnetic signatures whose minuteness suggests that the underlying spin-phonon couplings are largely irrelevant. We present an exception to this rule, showing that novel effects can occur as a consequence. Our first-principles calculations reveal that spin-phonon interactions are essential to reproduce the experimental observations on the phase diagram of magnetoelectric multiferroic BiCoO3. Moreover, we predict that, under compression, these couplings lead to an unprecedented temperature-driven double-reentrant sequence of ferroelectric transitions. We propose how to modify BiCoO3 via chemical doping to reproduce such marked effects under ambient conditions, thereby yielding useful multifunctionality.
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Affiliation(s)
- Claudio Cazorla
- School of Materials Science and Engineering and Integrated Materials Design Centre, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Oswaldo Diéguez
- Department of Materials Science and Engineering, Faculty of Engineering, and The Raymond and Beverly Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, IL-69978 Tel Aviv, Israel
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 5 avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg
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36
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Abstract
Dielectric capacitors, although presenting faster charging/discharging rates and better stability compared with supercapacitors or batteries, are limited in applications due to their low energy density. Antiferroelectric (AFE) compounds, however, show great promise due to their atypical polarization-versus-electric field curves. Here we report our first-principles-based theoretical predictions that Bi1-xRxFeO3 systems (R being a lanthanide, Nd in this work) can potentially allow high energy densities (100-150 J cm-3) and efficiencies (80-88%) for electric fields that may be within the range of feasibility upon experimental advances (2-3 MV cm-1). In addition, a simple model is derived to describe the energy density and efficiency of a general AFE material, providing a framework to assess the effect on the storage properties of variations in doping, electric field magnitude and direction, epitaxial strain, temperature and so on, which can facilitate future search of AFE materials for energy storage.
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Affiliation(s)
- Bin Xu
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 5 Avenue des Hauts-Fourneaux, Esch/Alzette L-4362, Luxembourg
| | - L Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
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37
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Fowlie J, Gibert M, Tieri G, Gloter A, Íñiguez J, Filippetti A, Catalano S, Gariglio S, Schober A, Guennou M, Kreisel J, Stéphan O, Triscone JM. Conductivity and Local Structure of LaNiO 3 Thin Films. Adv Mater 2017; 29:1605197. [PMID: 28262988 DOI: 10.1002/adma.201605197] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2016] [Revised: 01/10/2017] [Indexed: 06/06/2023]
Abstract
A marked conductivity enhancement is reported in 6-11 unit cell LaNiO3 thin films. A maximal conductivity is also observed in ab initio calculations for films of the same thickness. In agreement with results from state of the art scanning transmission electron microscopy, the calculations also reveal a differentiated film structure comprising characteristic surface, interior, and heterointerface structures. Based on this observation, a three-element parallel conductor model is considered and leads to the conclusion that the conductivity enhancement for films of 6-11 unit cells, stems from the onset of intercompetition between the three local structures in the film depth.
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Affiliation(s)
- Jennifer Fowlie
- DQMP, Université de Genève, 24 Quai E.-Ansermet, 1211, Geneva, Switzerland
| | - Marta Gibert
- DQMP, Université de Genève, 24 Quai E.-Ansermet, 1211, Geneva, Switzerland
| | - Giulio Tieri
- DQMP, Université de Genève, 24 Quai E.-Ansermet, 1211, Geneva, Switzerland
- Laboratoire de Physique des Solides, CNRS UMR8502, Université Paris-Sud, 91405, Orsay, France
| | - Alexandre Gloter
- Laboratoire de Physique des Solides, CNRS UMR8502, Université Paris-Sud, 91405, Orsay, France
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux, Luxembourg
| | - Alessio Filippetti
- Istituto dei Materiali, CNR-IOM and Dipartimento di Fisica, Università di Cagliari, Monserrato, 09042-I, Cagliari, Italy
| | - Sara Catalano
- DQMP, Université de Genève, 24 Quai E.-Ansermet, 1211, Geneva, Switzerland
| | - Stefano Gariglio
- DQMP, Université de Genève, 24 Quai E.-Ansermet, 1211, Geneva, Switzerland
| | - Alexander Schober
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux, Luxembourg
| | - Mael Guennou
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux, Luxembourg
| | - Jens Kreisel
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux, Luxembourg
- Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, 4422, Belvaux, Luxembourg
| | - Odile Stéphan
- Laboratoire de Physique des Solides, CNRS UMR8502, Université Paris-Sud, 91405, Orsay, France
| | - Jean-Marc Triscone
- DQMP, Université de Genève, 24 Quai E.-Ansermet, 1211, Geneva, Switzerland
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38
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Bae IT, Kovács A, Zhao HJ, Íñiguez J, Yasui S, Ichinose T, Naganuma H. Elucidation of crystal and electronic structures within highly strained BiFeO 3 by transmission electron microscopy and first-principles simulation. Sci Rep 2017; 7:46498. [PMID: 28422150 PMCID: PMC5395957 DOI: 10.1038/srep46498] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2016] [Accepted: 03/17/2017] [Indexed: 11/09/2022] Open
Abstract
Crystal and electronic structures of ~380 nm BiFeO3 film grown on LaAlO3 substrate are comprehensively studied using advanced transmission electron microscopy (TEM) technique combined with first-principles theory. Cross-sectional TEM images reveal the BiFeO3 film consists of two zones with different crystal structures. While zone II turns out to have rhombohedral BiFeO3, the crystal structure of zone I matches none of BiFeO3 phases reported experimentally or predicted theoretically. Detailed electron diffraction analysis combined with first-principles calculation allows us to determine that zone I displays an orthorhombic-like monoclinic structure with space group of Cm (=8). The growth mechanism and electronic structure in zone I are further discussed in comparison with those of zone II. This study is the first to provide an experimentally validated complete crystallographic detail of a highly strained BiFeO3 that includes the lattice parameter as well as the basis atom locations in the unit cell.
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Affiliation(s)
- In-Tae Bae
- Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, Binghamton, New York 13902, USA
| | - András Kovács
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Peter Grünberg Institute, Forschungszentrum Jülich, Jülich 52425, Germany
| | - Hong Jian Zhao
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 41 rue du Brill, L-4422 Belvaux, Luxembourg
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 41 rue du Brill, L-4422 Belvaux, Luxembourg
| | - Shintaro Yasui
- Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259-J2-43, Nagatsuda-cho, Midori-ku, Yokohama, 226-8502, Japan
| | - Tomohiro Ichinose
- Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
| | - Hiroshi Naganuma
- Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan.,Unit´e Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Universit´e Paris-Saclay, 91767 Palaiseau, France
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39
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Filatre-Furcate A, Bellec N, Jeannin O, Auban-Senzier P, Fourmigué M, Íñiguez J, Canadell E, Brière B, Ta Phuoc V, Lorcy D. Single-Component Conductors: A Sturdy Electronic Structure Generated by Bulky Substituents. Inorg Chem 2016; 55:6036-46. [PMID: 27266960 DOI: 10.1021/acs.inorgchem.6b00556] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
While the introduction of large, bulky substituents such as tert-butyl, -SiMe3, or -Si(isopropyl)3 has been used recently to control the solid state structures and charge mobility of organic semiconductors, this crystal engineering strategy is usually avoided in molecular metals where a maximized overlap is sought. In order to investigate such steric effects in single component conductors, the ethyl group of the known [Au(Et-thiazdt)2] radical complex has been replaced by an isopropyl one to give a novel single component molecular conductor denoted [Au(iPr-thiazdt)2] (iPr-thiazdt: N-isopropyl-1,3-thiazoline-2-thione-4,5-dithiolate). It exhibits a very original stacked structure of crisscross molecules interacting laterally to give a truly three-dimensional network. This system is weakly conducting at ambient pressure (5 S·cm(-1)), and both transport and optical measurements evidence a slowly decreasing energy gap under applied pressure with a regime change around 1.5 GPa. In contrast with other conducting systems amenable to a metallic state under physical or chemical pressure, the Mott insulating state is stable here up to 4 GPa, a consequence of its peculiar electronic structure.
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Affiliation(s)
- Agathe Filatre-Furcate
- Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes Electroactifs (MaCSE) , Campus de Beaulieu, Bâtiment 10A, 35042 Rennes cedex, France
| | - Nathalie Bellec
- Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes Electroactifs (MaCSE) , Campus de Beaulieu, Bâtiment 10A, 35042 Rennes cedex, France
| | - Olivier Jeannin
- Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes Electroactifs (MaCSE) , Campus de Beaulieu, Bâtiment 10A, 35042 Rennes cedex, France
| | - Pascale Auban-Senzier
- Laboratoire de Physique des Solides UMR 8502 CNRS-Université Paris-Sud, Université Paris-Saclay , F.91405 Orsay cedex, France
| | - Marc Fourmigué
- Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes Electroactifs (MaCSE) , Campus de Beaulieu, Bâtiment 10A, 35042 Rennes cedex, France
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST) , 5 avenue des Hauts-Fourneaux, L-4362 Esch/Alzette, Luxembourg.,Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus de la UAB, E-08193 Bellaterra, Spain
| | - Enric Canadell
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus de la UAB, E-08193 Bellaterra, Spain
| | - Benjamin Brière
- GREMAN UMR 7347 CNRS, Université F. Rabelais , Parc de Grandmont, 37200 Tours, France
| | - Vinh Ta Phuoc
- GREMAN UMR 7347 CNRS, Université F. Rabelais , Parc de Grandmont, 37200 Tours, France
| | - Dominique Lorcy
- Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes Electroactifs (MaCSE) , Campus de Beaulieu, Bâtiment 10A, 35042 Rennes cedex, France
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40
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Wojdeł JC, Íñiguez J. Ferroelectric transitions at ferroelectric domain walls found from first principles. Phys Rev Lett 2014; 112:247603. [PMID: 24996110 DOI: 10.1103/physrevlett.112.247603] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2014] [Indexed: 06/03/2023]
Abstract
We present a first-principles study of model domain walls (DWs) in prototypic ferroelectric PbTiO(3). At high temperature the DW structure is somewhat trivial, with atoms occupying high-symmetry positions. However, upon cooling the DW undergoes a symmetry-breaking transition characterized by a giant dielectric anomaly and the onset of a large and switchable polarization. Our results thus corroborate previous arguments for the occurrence of ferroic orders at structural DWs, providing a detailed atomistic picture of a temperature-driven DW-confined transformation. Beyond its relevance to the field of ferroelectrics, our results highlight the interest of these DWs in the broader areas of low-dimensional physics and phase transitions in strongly fluctuating systems.
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Affiliation(s)
- Jacek C Wojdeł
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
| | - Jorge Íñiguez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
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41
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Wojdeł JC, Hermet P, Ljungberg MP, Ghosez P, Íñiguez J. First-principles model potentials for lattice-dynamical studies: general methodology and example of application to ferroic perovskite oxides. J Phys Condens Matter 2013; 25:305401. [PMID: 23828610 DOI: 10.1088/0953-8984/25/30/305401] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We present a scheme to construct model potentials, with parameters computed from first principles, for large-scale lattice-dynamical simulations of materials. We mimic the traditional solid-state approach to the investigation of vibrational spectra, i.e., we start from a suitably chosen reference configuration of the compound and describe its energy as a function of arbitrary atomic distortions by means of a Taylor series. Such a form of the potential-energy surface is general, trivial to formulate for any material, and physically transparent. Further, such models involve clear-cut approximations, their precision can be improved in a systematic fashion, and their simplicity allows for convenient and practical strategies to compute/fit the potential parameters. We illustrate our scheme with two challenging cases in which the model potential is strongly anharmonic, namely, the ferroic perovskite oxides PbTiO3 and SrTiO3. Studying these compounds allows us to better describe the connection between the so-called effective-Hamiltonian method and ours (which may be seen as an extension of the former), and to show the physical insight and predictive power provided by our approach-e.g., we present new results regarding the factors controlling phase-transition temperatures, novel phase transitions under elastic constraints, an improved treatment of thermal expansion, etc.
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Affiliation(s)
- Jacek C Wojdeł
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, E-08193 Bellaterra, Spain
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42
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Kimmel AV, Íñiguez J, Cain MG, Sushko PV. Neutral and Charged Oxygen Vacancies Induce Two-Dimensional Electron Gas Near SiO2/BaTiO3 Interfaces. J Phys Chem Lett 2013; 4:333-337. [PMID: 26283444 DOI: 10.1021/jz301948k] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
An atomistic model of the SiO2/BaTiO3 interface was constructed using ab initio molecular dynamics. Analysis of its structure and electronic properties reveals that (i) the band gap at the stoichiometric SiO2/BaTiO3 interface is significantly smaller than those of the bulk BaTiO3 and SiO2, and (ii) the interface contains ∼5.5 nm(-2) oxygen vacancies (V(2+)) in the outermost TiO2 plane of the BaTiO3 and ∼11 nm(-2) Si-O-Ti bonds resulting from breaking Si-O-Si and Ti-O-Ti bonds and subsequent rearrangement of the atoms. This structure gives rise to the interface polar region with positive and negative charges localized in the BaTiO3 and SiO2 parts of the interface, respectively. We propose that high dielectric response, observed experimentally in the SiO2-coated nanoparticles of BaTiO3, is due to the electron gas formed in oxygen-deficient BaTiO3 and localized in the vicinity of the polar interface.
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Affiliation(s)
- Anna V Kimmel
- †Department of Physics and Astronomy and the London Centre for Nanotechnology, University College London, Gower Street, London, WC1E 6BT, U.K
- ‡National Physical Laboratory, Teddington, TW11 0LW, U.K
| | - Jorge Íñiguez
- §Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), 08193 Bellaterra, Spain
| | - Markys G Cain
- ‡National Physical Laboratory, Teddington, TW11 0LW, U.K
| | - Peter V Sushko
- †Department of Physics and Astronomy and the London Centre for Nanotechnology, University College London, Gower Street, London, WC1E 6BT, U.K
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43
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Escorihuela-Sayalero C, Diéguez O, Íñiguez J. Strain engineering magnetic frustration in perovskite oxide thin films. Phys Rev Lett 2012; 109:247202. [PMID: 23368370 DOI: 10.1103/physrevlett.109.247202] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2012] [Revised: 10/05/2012] [Indexed: 06/01/2023]
Abstract
Our first-principles results show that geometric frustration can be induced in thin films of multiferroic BiFeO(3). We find that competing magnetic interactions occur in the so-called supertetragonal phase of this material, which can be grown on strongly compressive substrates. We show that the frustration level can be tuned by appropriately choosing the substrate; in fact, the phase diagram of the films presents a critical line at which the three-dimensional spin order gets annihilated. We argue that these effects are not exclusive to BiFeO(3) and predict that they also occur in BiCoO(3).
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44
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Yzambart G, Bellec N, Nasser G, Jeannin O, Roisnel T, Fourmigué M, Auban-Senzier P, Íñiguez J, Canadell E, Lorcy D. Anisotropic Chemical Pressure Effects in Single-Component Molecular Metals Based on Radical Dithiolene and Diselenolene Gold Complexes. J Am Chem Soc 2012; 134:17138-48. [DOI: 10.1021/ja3065649] [Citation(s) in RCA: 68] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Gilles Yzambart
- Institut des
Sciences Chimiques
de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes
Electroactifs (MaCSE), Campus de Beaulieu, Bât 10A, 35042 Rennes
cedex, France
| | - Nathalie Bellec
- Institut des
Sciences Chimiques
de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes
Electroactifs (MaCSE), Campus de Beaulieu, Bât 10A, 35042 Rennes
cedex, France
| | - Ghassan Nasser
- Institut des
Sciences Chimiques
de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes
Electroactifs (MaCSE), Campus de Beaulieu, Bât 10A, 35042 Rennes
cedex, France
| | - Olivier Jeannin
- Institut des
Sciences Chimiques
de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes
Electroactifs (MaCSE), Campus de Beaulieu, Bât 10A, 35042 Rennes
cedex, France
| | - Thierry Roisnel
- Institut des
Sciences Chimiques
de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes
Electroactifs (MaCSE), Campus de Beaulieu, Bât 10A, 35042 Rennes
cedex, France
| | - Marc Fourmigué
- Institut des
Sciences Chimiques
de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes
Electroactifs (MaCSE), Campus de Beaulieu, Bât 10A, 35042 Rennes
cedex, France
| | - Pascale Auban-Senzier
- Laboratoire
de Physique des
Solides, UMR 8502 CNRS-Université de Paris-Sud, Bat 510, F-91405 Orsay cedex, France
| | - Jorge Íñiguez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la
UAB, E-08193 Bellaterra, Spain
| | - Enric Canadell
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la
UAB, E-08193 Bellaterra, Spain
| | - Dominique Lorcy
- Institut des
Sciences Chimiques
de Rennes, UMR 6226 CNRS-Université de Rennes 1, Matière Condensée et Systèmes
Electroactifs (MaCSE), Campus de Beaulieu, Bât 10A, 35042 Rennes
cedex, France
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Infante IC, Juraszek J, Fusil S, Dupé B, Gemeiner P, Diéguez O, Pailloux F, Jouen S, Jacquet E, Geneste G, Pacaud J, Íñiguez J, Bellaiche L, Barthélémy A, Dkhil B, Bibes M. Multiferroic phase transition near room temperature in BiFeO3 films. Phys Rev Lett 2011; 107:237601. [PMID: 22182123 DOI: 10.1103/physrevlett.107.237601] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2011] [Indexed: 05/31/2023]
Abstract
In multiferroic BiFeO(3) thin films grown on highly mismatched LaAlO(3) substrates, we reveal the coexistence of two differently distorted polymorphs that leads to striking features in the temperature dependence of the structural and multiferroic properties. Notably, the highly distorted phase quasiconcomitantly presents an abrupt structural change, transforms from a standard to a nonconventional ferroelectric, and transitions from antiferromagnetic to paramagnetic at 360±20 K. These coupled ferroic transitions just above room temperature hold promises of giant piezoelectric, magnetoelectric, and piezomagnetic responses, with potential in many applications fields.
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Affiliation(s)
- I C Infante
- Unité Mixte de Physique CNRS/Thales, Campus de l'Ecole Polytechnique, 1 avenue Fresnel, 91767 Palaiseau, France
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Wang D, Buixaderas E, Íñiguez J, Weerasinghe J, Wang H, Bellaiche L. Fermi resonance involving nonlinear dynamical couplings in Pb(Zr,Ti)O3 solid solutions. Phys Rev Lett 2011; 107:175502. [PMID: 22107534 DOI: 10.1103/physrevlett.107.175502] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2011] [Indexed: 05/31/2023]
Abstract
We have used first-principles-based simulations and Raman scattering techniques to reveal a novel dynamical phenomenon in Pb(Zr,Ti)O(3) solid solutions: a Fermi resonance (FR) emerging from the nonlinear coupling between ferroelectric (FE) motions and tiltings of oxygen octahedra. This FR manifests itself as the doubling of a nominally single FE mode in a purely FE phase, when the resonant frequency of the FE mode is close to the first overtone of the tiltings. We show that the FR is the result of a nonlinear coupling that is proportional to the spontaneous polarization of the material and derive an analytical model that captures the essence of the effect.
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Affiliation(s)
- Dawei Wang
- Shaanxi Key Laboratory of Photonics Technology for Information, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
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Diéguez O, Íñiguez J. First-principles investigation of morphotropic transitions and phase-change functional responses in BiFeO3-BiCoO3 multiferroic solid solutions. Phys Rev Lett 2011; 107:057601. [PMID: 21867098 DOI: 10.1103/physrevlett.107.057601] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2011] [Indexed: 05/31/2023]
Abstract
We present an ab initio study of the BFCO solid solution formed by multiferroics BiFeO(3) (BFO) and BiFeO(3) (BCO). We find that BFCO presents a strongly discontinuous morphotropic transition between BFO-like and BCO-like ferroelectric phases. Further, for all compositions such phases remain (meta)stable and retain well-differentiated properties. Our results thus suggest that an electric field can be used to switch between these structures and show that such a switching involves large phase-change effects of various types, including piezoelectric, electric, and magnetoelectric ones.
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Affiliation(s)
- Oswaldo Diéguez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
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Poloni R, Íñiguez J, García A, Canadell E. An efficient computational method for use in structural studies of crystals with substitutional disorder. J Phys Condens Matter 2010; 22:415401. [PMID: 21386597 DOI: 10.1088/0953-8984/22/41/415401] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
We present a computationally efficient semi-empirical method, based on standard first-principles techniques and the so-called virtual crystal approximation, for determining the average atomic structure of crystals with substitutional disorder. We show that, making use of a minimal amount of experimental information, it is possible to define convenient figures of merit that allow us to recast the determination of the average atomic ordering within the unit cell as a minimization problem. We have tested our approach by applying it to a wide variety of materials, ranging from oxynitrides to borocarbides and transition-metal perovskite oxides. In all the cases we were able to reproduce the experimental solution, when it exists, or the first-principles result obtained by means of much more computationally intensive approaches.
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Affiliation(s)
- Roberta Poloni
- Institut de Ciència de Materials de Barcelona (CSIC), Campus UAB, 08193 Bellaterra, Spain
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Yildirim T, Vergara LI, Íñiguez J, Musfeldt JL, Harris AB, Rogado N, Cava RJ, Yen F, Chaudhury RP, Lorenz B. Phonons and magnetoelectric interactions in Ni 3V 2O 8. J Phys : Condens Matter 2008; 20:434214. [DOI: 10.1088/0953-8984/20/43/434214] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/19/2023]
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