Quintic refractive index profile-based funnel-shaped silicon antireflective structures for enhanced photodetector performance

Antireflection, vital in optoelectronics devices such as solar cells and photodetectors, reduces light reflection and increases absorption. Antireflective structures (ARS), a primary method by which to realize this effect, control the refractive index (RI) profile based on their shape. The antireflection efficiency depends on the refractive index profile, with the quintic RI profile being recognized as ideal for superior antireflection. However, fabricating nano-sized structures with a desired shape, particularly in silicon with a quintic RI profile, has been a challenge. In this study, we introduce a funnel-shaped silicon (Si) ARS with a quintic RI profile. Its antireflective properties are demonstrated through reflectance measurements and by an application to a photodetector surface. Compared to the film Si and cone-shaped ARS types, which are common structures to achieve antireflection, the funnel-shaped ARS showed reflectance of 4.24% at 760 nm, whereas those of the film Si and cone-shaped ARS were 32.8% and 10.6%, respectively. Photodetectors with the funnel-shaped ARS showed responsivity of 0.077 A/W at 950 nm, which is 19.54 times higher than that with the film Si and 2.45 times higher than that with the cone-shaped ARS.

Fast-Response and Low-Power Self-Heating Gas Sensor Using Metal/Metal Oxide/Metal (MMOM) Structured Nanowires

With the escalating global awareness of air quality management, the need for continuous and reliable monitoring of toxic gases by using low-power operating systems has become increasingly important. One of which, semiconductor metal oxide gas sensors have received great attention due to their high/fast response and simple working mechanism. More specifically, self-heating metal oxide gas sensors, wherein direct thermal activation in the sensing material, have been sought for their low power-consuming characteristics. However, previous works have neglected to address the temperature distribution within the sensing material, resulting in inefficient gas response and prolonged response/recovery times, particularly due to the low-temperature regions. Here, we present a unique metal/metal oxide/metal (MMOM) nanowire architecture that conductively confines heat to the sensing material, achieving high uniformity in the temperature distribution. The proposed structure enables uniform thermal activation within the sensing material, allowing the sensor to efficiently react with the toxic gas. As a result, the proposed MMOM gas sensor showed significantly enhanced gas response (from 6.7 to 20.1% at 30 ppm), response time (from 195 to 17 s at 30 ppm), and limit of detection (∼1 ppm) when compared to those of conventional single-material structures upon exposure to carbon monoxide. Furthermore, the proposed work demonstrated low power consumption (2.36 mW) and high thermal durability (1500 on/off cycles), demonstrating its potential for practical applications in reliable and low-power operating gas sensor systems. These results propose a new paradigm for power-efficient and robust self-heating metal oxide gas sensors with potential implications for other fields requiring thermal engineering.

An experimental and numerical study on adhesion force at the nanoscale

Adhesion has attracted great interest in science and engineering especially in the field pertaining to nano-science because every form of physical contact is fundamentally a macroscopic observation of interactions between nano-asperities under the adhesion phenomenon. Despite its importance, no practical adhesion prediction model has been developed due to the complexity of examining contact between nano-asperities. Here, we scrutinized the contact phenomenon and developed a contact model, reflecting the physical sequence in which adhesion develops. For the first time ever, our model analyzes the adhesion force and contact properties, such as separation distance, contact location, actual contact area, and the physical deformation of the asperities, between rough surfaces. Through experiments using atomic force microscopy, we demonstrated a low absolute percentage error of 2.8% and 6.55% between the experimental and derived data for Si-Si and Mo-Mo contacts, respectively, and proved the accuracy and practicality of our model in the analysis of the adhesion phenomenon.

Ultrathin Serpentine Insulation Layer Architecture for Ultralow Power Gas Sensor

Toxic gases have surreptitiously influenced the health and environment of contemporary society with their odorless/colorless characteristics. As a result, a pressing need for reliable and portable gas-sensing devices has continuously increased. However, with their negligence to efficiently microstructure their bulky supportive layer on which the sensing and heating materials are located, previous semiconductor metal-oxide gas sensors have been unable to fully enhance their power efficiency, a critical factor in power-stringent portable devices. Herein, an ultrathin insulation layer with a unique serpentine architecture is proposed for the development of a power-efficient gas sensor, consuming only 2.3 mW with an operating temperature of 300 °C (≈6% of the leading commercial product). Utilizing a mechanically robust serpentine design, this work presents a fully suspended standalone device with a supportive layer thickness of only ≈50 nm. The developed gas sensor shows excellent mechanical durability, operating over 10 000 on/off cycles and ≈2 years of life expectancy under continuous operation. The gas sensor detected carbon monoxide concentrations from 30 to 1 ppm with an average response time of ≈15 s and distinguishable sensitivity to 1 ppm (ΔR/R0 = 5%). The mass-producible fabrication and heating efficiency presented here provide an exemplary platform for diverse power-efficient-related devices.

Ultrafast (∼0.6 s), Robust, and Highly Linear Hydrogen Detection up to 10% Using Fully Suspended Pure Pd Nanowire

The high explosiveness of hydrogen gas in the air necessitates prompt detection in settings where hydrogen is used. For this reason, hydrogen sensors are required to offer rapid detection and possess superior sensing characteristics in terms of measurement range, linearity, selectivity, lifetime, and environment insensitivity according to the publicized protocol. However, previous approaches have only partially achieved the standardized requirements and have been limited in their capability to develop reliable materials for spatially accessible systems. Here, an electrical hydrogen sensor with an ultrafast response (∼0.6 s) satisfying all demands for hydrogen detection is demonstrated. Tailoring structural engineering based on the reaction kinetics of hydrogen and palladium, an optimized heating architecture that thermally activates fully suspended palladium (Pd) nanowires at a uniform temperature is designed. The developed Pd nanostructure, at a designated temperature distribution, rapidly reacts with hydrogen, enabling a hysteresis-free response from 0.1% to 10% and durable characteristics in mechanical shock and repetitive operation (>10,000 cycles). Moreover, the device selectively detects hydrogen without performance degradation in humid or carbon-based interfering gas circumstances. Finally, to verify spatial accessibility, the wireless hydrogen detection system has been demonstrated, detecting and reporting hydrogen leakage in real-time within just 1 s.

Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory

With the exponential growth of the semiconductor industry, radiation-hardness has become an indispensable property of memory devices. However, implementation of radiation-hardened semiconductor memory devices inevitably requires various radiation-hardening technologies from the layout level to the system level, and such technologies incur a significant energy overhead. Thus, there is a growing demand for emerging memory devices that are energy-efficient and intrinsically radiation-hard. Here, we report a nanoelectromechanical non-volatile memory (NEM-NVM) with an ultra-low energy consumption and radiation-hardness. To achieve an ultra-low operating energy of less than 10 [Formula: see text], we introduce an out-of-plane electrode configuration and electrothermal erase operation. These approaches enable the NEM-NVM to be programmed with an ultra-low energy of 2.83 [Formula: see text]. Furthermore, due to its mechanically operating mechanisms and radiation-robust structural material, the NEM-NVM retains its superb characteristics without radiation-induced degradation such as increased leakage current, threshold voltage shift, and unintended bit-flip even after 1 Mrad irradiation.

Wireless and Linear Hydrogen Detection up to 4% with High Sensitivity through Phase-Transition-Inhibited Pd Nanowires

Palladium (Pd) has been drawing increasing attention as a hydrogen (H₂) detecting material due to its highly selective sensitivity to H₂. However, at H₂ concentrations above 2%, Pd undergoes an inevitable phase transition, causing undesirable electrical and mechanical alterations. In particular, nonlinear gas response (ΔR/R₀) that accompanies phase transition has been a great bottleneck for detecting H₂ in high concentrations, which is especially important as there is a risk of explosion over 4% H₂. Here, we propose a phase-transition-inhibited Pd nanowire H₂ sensor that can detect up to 4% H₂ with high linearity and high sensitivity. Based on the calculation of the change in free energy, we designed Pd nanowires that are highly adhered to the substrate to withstand the stress that leads to phase transition. We theoretically optimized the Pd nanowire dimensions using a finite element method simulation and then experimentally fabricated the proposed sensor by exploiting a developed nanofabrication method. The proposed sensor exhibits a high sensing linearity (98.9%) with high and stable sensitivity (ΔR/R₀/[H₂] = 875%·bar^-1) over a full range of H₂ concentrations (0.1-4%). Using the fabricated Pd sensors, we have successfully demonstrated a wireless sensor module that can detect H₂ with high linearity, notifying real-time H₂ leakage through remote communication. Overall, our work suggests a nanostructuring strategy for detecting H₂ with a phase-transition-inhibited pure Pd H₂ sensor with rigorous scientific exploration.

Integration of Gold Nanoparticle-Carbon Nanotube Composite for Enhanced Contact Lifetime of Microelectromechanical Switches with Very Low Contact Resistance

Electrical circuits require ideal switches with low power consumption for future electronic applications. However, transistors, the most developed electrical switches available currently, have certain fundamental limitations such as increased leakage current and limited subthreshold swing. To overcome these limitations, micromechanical switches have been extensively studied; however, it is challenging to develop micromechanical switches with high endurance and low contact resistance. This study demonstrates highly reliable microelectromechanical switches using nanocomposites. Nanocomposites consisting of gold nanoparticles (Au NPs) and carbon nanotubes (CNTs) are coated on contact electrodes as contact surfaces through a scalable and solution-based fabrication process. While deformable CNTs in the nanocomposite increase the effective contact area under mechanical loads, highly conductive Au NPs provide current paths with low contact resistance between CNTs. Given these advantages, the switches exhibit robust switching operations over 5 × 10⁶ cycles under hot-switching conditions in air. The switches also show low contact resistance without subthreshold region, an extremely small leakage current, and a high on/off ratio.

Chemo-Mechanically Operating Palladium-Polymer Nanograting Film for a Self-Powered H2 Gas Sensor

This study proposes a reliable and self-powered hydrogen (H₂) gas sensor composed of a chemo-mechanically operating nanostructured film and photovoltaic cell. Specifically, the nanostructured film has a configuration in which an asymmetrically coated palladium (Pd) film is coated on a periodic polyurethane acrylate (PUA) nanograting. The asymmetric Pd nanostructures, optimized by a finite element method simulation, swell upon reacting with H₂ and thereby bend the PUA nanograting, changing the amount of transmitted light and the current output of the photovoltaic cell. Since the degree of warping is determined by the concentration of H₂ gas, a wide concentration range of H₂ (0.1-4.0%) can be detected by measuring the self-generated electrical current of the photovoltaic cell without external power. The normalized output current changes are ∼1.5%, ∼2.8%, ∼3.5%, ∼5.0%, ∼21.5%, and 25.3% when the concentrations of H₂ gas are 0.1%, 0.5%, 1.0%, 1.6%, 2%, and 4%, respectively. Moreover, because Pd is highly chemically reactive to H₂ and also because there is no electrical current applied through Pd, the proposed sensor can avoid device failure due to the breakage of the Pd sensing material, resulting in high reliability, and can show high selectivity against various gases such as carbon monoxide, hydrogen sulfide, nitrogen dioxide, and water vapor. Finally, using only ambient visible light, the sensor was modularized to produce an alarm in the presence of H₂ gas, verifying a potential always-on H₂ gas monitoring application.

Geometrically Structured Nanomaterials for Nanosensors, NEMS, and Nanosieves

Recently, geometrically structured nanomaterials have received great attention due to their unique physical and chemical properties, which originate from the geometric variation in such materials. Indeed, the use of various geometrically structured nanomaterials has been actively reported in enhanced-performance devices in a wide range of applications. Recent significant progress in the development of geometrically structured nanomaterials and associated devices is summarized. First, a brief introduction of advanced nanofabrication methods that enable the fabrication of various geometrically structured nanomaterials is given, and then the performance enhancements achieved in devices utilizing these nanomaterials, namely, i) physical and gas nanosensors, ii) nanoelectromechanical devices, and iii) nanosieves are described. For the device applications, a systematic summary of their structures, working mechanisms, fabrication methods, and output performance is provided. Particular focus is given to how device performance can be enhanced through the geometric structures of the nanomaterials. Finally, perspectives on the development of novel nanomaterial structures and associated devices are presented.

Realization of Nanolene: A Planar Array of Perfectly Aligned, Air-Suspended Nanowires

Air suspension and alignment are fundamental requirements to make the best use of nanowires' unique properties; however, satisfying both requirements is very challenging due to the mechanical instability of air-suspended nanowires. Here, a perfectly aligned air-suspended nanowire array called "nanolene" is demonstrated, which has a high mechanical stability owing to a C-channel-shaped cross-section of the nanowires. The excellent mechanical stability is provided through geometrical modeling and finite element method simulations. The C-channel cross-section can be realized by top-down fabrication procedures, resulting in reliable demonstrations of the nanolenes with various materials and geometric parameters. The fabrication process provides large-area uniformity; therefore, nanolene can be considered as a 2D planar platform for 1D nanowire arrays. Thanks to the high mechanical stability of the proposed nanolene, perfectly aligned air-suspended nanowire arrays with an unprecedented length of 1 mm (aspect ratio ≈5100) are demonstrated. Since the nanolene can be used in an energy-efficient nanoheater, two energy-stringent sensors, namely, an air-flow sensor and a carbon monoxide gas sensor, are demonstrated. In particular, the gas sensor achieves sub-10 mW operations, which is a requirement for application in mobile phones. The proposed nanolene will pave the way to accelerate nanowire research and industrialization by providing reliable, high-performance nanowire devices.

Stress-engineered palladium nanowires for wide range (0.1%-3.9%) of H2 detection with high durability

Pd nanowire-based H₂ sensors have attracted significant attention because of their superior sensing performance. However, when exposed to H₂ concentrations of more than 2%, Pd experiences volume expansion over 10%, resulting in a significant amount of mechanical stress. Thus, exposure to such high H₂ concentrations causes physical destruction of Pd nanowires, such as breaks and peel-offs, leading to severe difficulty in the reliable detection of H₂ over a wide concentration range. Here, we proposed a structural approach to resolve this issue by introducing a partially anchored Pd nanowire (PA-PdNW) structure. In this configuration, most of the structure was air-suspended, leaving a small portion anchored to the substrate. Air-suspension enabled PA-PdNW to expand freely, thus relieving the mechanical stress; therefore, the Pd nanowires could withstand numerous exposures to high H₂ concentrations. To demonstrate the PA-PdNW structure, we developed a nano-fabrication method based on conventional semiconductor processes and successfully manufactured H₂ sensor devices with uniform, perfectly aligned PA-PdNW arrays stably air-suspended with designed gaps from the substrate. The fabricated sensors achieved reliable detection of H₂ in the 0.1%-3.9% concentration range with a significant resistance change. In addition, compared with fully anchored Pd nanowire (FA-PdNW) sensors, the PA-PdNW sensors showed superior durability, and the nanowires retained their initial structures even after 300 exposures to high H₂ concentrations. Furthermore, it was confirmed that the PA-PdNW sensor can stably operate even in extremely humid environments at 85% relative humidity.

Integration of a Carbon Nanotube Network on a Microelectromechanical Switch for Ultralong Contact Lifetime

Micro-/nanoelectromechanical (MEM/NEM) switches have been extensively studied to address the limitations of transistors, such as the increased standby power consumption and performance dependence on temperature and radiation. However, their lifetimes are limited owing to the degradation of the contact surfaces. Even though several materials and structural designs have been recently developed to improve the lifetime, the production of a microswitch that is compatible with a complementary metal-oxide semiconductor (CMOS) with a long lifetime remains a significant challenge. We demonstrate a vertically actuated MEM switch with extremely high reliability by integrating a carbon nanotube (CNT) network on a gold electrode as the contact material using a low-temperature, CMOS-compatible solution process. In addition to their outstanding mechanical and electrical properties of CNTs, their deformability dramatically increases the effective contact area of the switch, thus resulting in the extension of the lifetime. The CNT-coated MEM switch exhibits a lifetime that is more than 7 × 10⁸ cycles when operated in hot-switching conditions, which is 1.9 × 10⁴ times longer than that of a control device without CNTs. The switch also shows an excellent switching performance, including a low electrical resistance, high on/off ratio, and an extremely small off-state current.

Edge-lit LCD backlight unit for 2D local dimming

Local dimming technology has been highly desired for integration with liquid crystal displays (LCDs) in order to improve their contrast ratios (CRs) as well as to overcome power efficiency bottlenecks. In this paper, we propose and demonstrate a slim (~1 mm) edge-lit LCD backlight unit (BLU) capable of 2D local dimming. We designed a semi-partitioned light guide plate (LGP) patterned with inverse-trapezoidal microstructures, which allows the ultra-slim BLU to function without prism sheets. Since light emitting diodes (LEDs) are placed in the middle of the LGP, the BLU can freely define illuminated areas and the whole BLU can be modularly expanded like a tile canvas. The fabricated BLU achieves uniformity in both local and global luminance distributions, as well as in high local dimming performance. Experimentally, the BLU increases the CR of the display up to two orders of magnitude compared to conventional BLUs.

Material-Independent Nanotransfer onto a Flexible Substrate Using Mechanical-Interlocking Structure

Nanowire-transfer technology has received much attention thanks to its capability to fabricate high-performance flexible nanodevices with high simplicity and throughput. However, it is still challenging to extend the conventional nanowire-transfer method to the fabrication of a wide range of devices since a chemical-adhesion-based nanowire-transfer mechanism is complex and time-consuming, hindering successful transfer of diverse nanowires made of various materials. Here, we introduce a material-independent mechanical-interlocking-based nanowire-transfer (MINT) method, fabricating ultralong and fully aligned nanowires on a large flexible substrate (2.5 × 2 cm²) in a highly robust manner. For the material-independent nanotransfer, we developed a mechanics-based nanotransfer method, which employs a dry-removable amorphous carbon (a-C) sacrificial layer between a vacuum-deposited nanowire and the underlying master mold. The controlled etching of the sacrificial layer enables the formation of a mechanical-interlocking structure under the nanowire, facilitating peeling off of the nanowire from the master mold robustly and reliably. Using the developed MINT method, we successfully fabricated various metallic and semiconductor nanowire arrays on flexible substrates. We further demonstrated that the developed method is well suited to the reliable fabrication of highly flexible and high-performance nanoelectronic devices. As examples, a fully aligned gold (Au) microheater array exhibited high bending stability (10⁶ cycling) and ultrafast (∼220 ms) heating operation up to ∼100 °C. An ultralong Au heater-embedded cuprous-oxide (Cu₂O) nanowire chemical gas sensor showed significantly improved reversible reaction kinetics toward NO₂ with 10-fold enhancement in sensitivity at 100 °C.

>1000-Fold Lifetime Extension of a Nickel Electromechanical Contact Device via Graphene

Micro-/nano-electromechanical (M/NEM) switches have received significant attention as promising switching devices for a wide range of applications such as computing, radio frequency communication, and power gating devices. However, M/NEM switches still suffer from unacceptably low reliability because of irreversible degradation at the contacting interfaces, hindering adoption in practical applications and further development. Here, we evaluate and verify graphene as a contact material for reliability-enhanced M/NEM switching devices. Atomic force microscopy experiments and quantum mechanics calculations reveal that energy-efficient mechanical contact-separation characteristics are achieved when a few layers of graphene are used as a contact material on a nickel surface, reducing the energy dissipation by 96.6% relative to that of a bare nickel surface. Importantly, graphene displays almost elastic contact-separation, indicating that little atomic-scale wear, including plastic deformation, fracture, and atomic attrition, is generated. We also develop a feasible fabrication method to demonstrate a MEM switch, which has high-quality graphene as the contact material, and verify that the devices with graphene show mechanically stable and elastic-like contact properties, consistent with our nanoscale contact experiment. The graphene coating extends the switch lifetime >10³ times under hot switching conditions.

Nanotransplantation Printing of Crystallographic-Orientation-Controlled Single-Crystalline Nanowire Arrays on Diverse Surfaces

The fabrication of a highly ordered array of single-crystalline nanostructures prepared from solution-phase or vapor-phase synthesis methods is extremely challenging due to multiple difficulties of spatial arrangement and control of crystallographic orientation. Herein, we introduce a nanotransplantation printing (NTPP) technique for the reliable fabrication, transfer, and arrangement of single-crystalline Si nanowires (NWs) on diverse substrates. NTPP entails (1) formation of nanoscale etch mask patterns on conventional low-cost Si via nanotransfer printing, (2) two-step combinatorial plasma etching for defining Si NWs, and (3) detachment and transfer of the NWs onto various receiver substrates using an infiltration-type polymeric transfer medium and a solvent-assisted adhesion switching mechanism. Using this approach, high-quality, highly ordered Si NWs can be formed on almost any type of surface including flexible plastic substrates, biological surfaces, and deep-trench structures. Moreover, NTPP provides controllability of the crystallographic orientation of NWs, which is confirmed by the successful generation of (100)- and (110)-oriented Si NWs with different properties. The outstanding electrical properties of the NWs were confirmed by fabricating and characterizing Schottky junction field-effect transistors. Furthermore, exploiting the highly flexible nature of the NWs, a high-performance piezoresistive strain sensor, with a high gauge factor over 200 was realized.

Nanomechanical Encoding Method Using Enhanced Thermal Concentration on a Metallic Nanobridge

We present a fast, energy-efficient nano-thermomechanical encoding scheme for digital information storage and retrieval. Digital encoding processes are conducted by the bistable electrothermal actuation of a scalable nanobridge device. The electrothermal energy is highly concentrated by enhanced electron/phonon scattering and heat insulation in a sub-100 nm metallic layer. The efficient conversion of electrothermal energy into mechanical strain allows digital switching and programming processes within 60 ns at 0.75 V with a programming energy of only 54 pJ. Furthermore, this encoding scheme together with the thermally robust design enables data retention at temperatures up to 400 °C. These results suggest that the proposed nano-thermomechanical encoding method could contribute to low-power electronics and robust information storage/retrieval systems.

Versatile Transfer of an Ultralong and Seamless Nanowire Array Crystallized at High Temperature for Use in High-Performance Flexible Devices

Nanowire (NW) transfer technology has provided promising strategies to realize future flexible materials and electronics. Using this technology, geometrically controlled, high-quality NW arrays can now be obtained easily on various flexible substrates with high throughput. However, it is still challenging to extend this technology to a wide range of high-performance device applications because its limited temperature tolerance precludes the use of high-temperature annealing, which is essential for NW crystallization and functionalization. A pulsed laser technique has been developed to anneal NWs in the presence of a flexible substrate; however, the induced temperature is not high enough to improve the properties of materials such as ceramics and semiconductors. Here, we present a versatile nanotransfer method that is applicable to NWs that require high-temperature annealing. To successfully anneal NWs during their transfer, the developed fabrication method involves sequential removal of a nanoscale sacrificial layer. Using this method, we first produce an ultralong, perfectly aligned polycrystalline barium titanate (BaTiO₃) NW array that is heat treated at 700 °C on a flexible polyethylene terephthalate (PET) substrate. This high-quality piezoelectric NW array on a flexible substrate is used as a flexible nanogenerator that generates current and voltage 37 and 10 times higher, respectively, than those of a nanogenerator made of noncrystallized BaTiO₃ NWs.

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain.

Novel buried inverse-trapezoidal micropattern for dual-sided light extracting backlight unit

We devised a novel buried inverse-trapezoidal (BIT) micropattern that can enable light extracting to both front and back sides of the backlight unit (BLU). The proposed BLU comprised of only a single-sheet light-guide plate (LGP) having the BIT micropatterns only on the top surface of the LGP. The proposed BLU shows normal directional light emitting characteristics to both the front and back sides of the LGP and successfully acts as a planer light source for a dual-sided LCD. The proposed BLU has the potential to dramatically reduce the thickness, weight and cost of the dual-sided LCD thanks to its single-sheet nature.

A mechanical and electrical transistor structure (METS) with a sub-2 nm nanogap for effective voltage scaling

A mechanical and electrical transistor structure (METS) is proposed for effective voltage scaling. The sub-2 nm nanogap by atomic layer deposition (ALD) without stiction and the application of a dielectric with high-permittivity allowed the pull-in voltage of sub-2 V, showing the strength of the mechanical actuation that is hard to realize in a typical complementary metal-oxide-semiconductor (CMOS) transistor. The results are verified by simulation and interpreted by the numerical equation. Therefore the METS can pave a new way to make a breakthrough to overcome the limits of CMOS technology.

Ultra-low voltage MEMS switch using a folded hinge structure

An ultra-low voltage microelectromechanical system (MEMS) switch for low-power integrated circuit (IC) applications is proposed, fabricated and demonstrated. The folded hinge structure allows a large beam structure to be suspended with a designed air gap, effectively suppressing unwanted deflection. The actuation voltage of the switch was measured to be 1.7 V, the lowest among electrostatic switches. There was no variation in the actuation voltage until 106 cyclic actuations, showing the stability of a low actuation voltage in electrostatic actuation for the first time. The contact resistance was around 12 Ω, caused by a low contact force below 1 μN despite an Au–Au contact.

High throughput ultralong (20 cm) nanowire fabrication using a wafer-scale nanograting template

Nanowires are being actively explored as promising nanostructured materials for high performance flexible electronics, biochemical sensors, photonic applications, solar cells, and secondary batteries. In particular, ultralong (centimeter-long) nanowires are highly attractive from the perspective of electronic performance, device throughput (or productivity), and the possibility of novel applications. However, most previous works on ultralong nanowires have issues related to limited length, productivity, difficult alignment, and deploying onto the planar substrate complying with well-matured device fabrication technologies. Here, we demonstrate a highly ordered ultralong (up to 20 cm) nanowire array, with a diameter of 50 nm (aspect ratio of up to 4,000,000:1), in an unprecedented large (8 in.) scale (2,000,000 strands on a wafer). We first devised a perfectly connected ultralong nanograting master template on the whole area of an 8 in. substrate using a top-down approach, with a density equivalent to that achieved with e-beam lithography (100 nm). Using this large-area, ultralong, high-density nanograting template, we developed a fast and effective method for fabricating up to 20 cm long nanowire arrays on a plastic substrate, composed of metal, dielectric, oxide, and ferroelectric materials. As a suggestion of practical application, a prototype of a large-area aluminum wire grid polarizer was demonstrated.

Actively transparent display with enhanced legibility based on an organic light-emitting diode and a cholesteric liquid crystal blind panel

Transparent display is one of the most promising concepts among the next generation information display devices. Nevertheless, conventional transparent displays have two inherent problems: low forward light efficiency due to the light being emitted also in a backward direction; and low legibility due to the visual interruption caused by the light coming from the background. In this work, a cholesteric liquid crystal (Ch-LC) based, actively operational blind panel is combined with transparent organic light-emitting diodes (TR-OLEDs) to recycle the light wasted by backward propagation in transparent displays while blocking the light from behind the display, pursuing both improved forward light efficiency and enhanced image legibility. By tuning the reflectance spectrum of the Ch-LC panel to match the emission spectrum of TR-OLEDs, we achieved luminous efficiency increase by as large as 21% (85%) when the top metal cathode side (the bottom ITO side) of the OLEDs fa'transparent OLED' ces the blind panel. Maximum transmittance of the proposed device reached a high value of 60%, successfully demonstrating a new window-like transparent display concept.

A sub-1-volt nanoelectromechanical switching device

Nanoelectromechanical (NEM) switches have received widespread attention as promising candidates in the drive to surmount the physical limitations currently faced by complementary metal oxide semiconductor technology. The NEM switch has demonstrated superior characteristics including quasi-zero leakage behaviour, excellent density capability and operation in harsh environments. However, an unacceptably high operating voltage (4-20 V) has posed a major obstacle in the practical use of the NEM switch in low-power integrated circuits. To utilize the NEM switch widely as a core device component in ultralow power applications, the operation voltage needs to be reduced to 1 V or below. However, sub-1 V actuation has not yet been demonstrated because of fabrication difficulties and irreversible switching failure caused by surface adhesion. Here, we report the sub-1 V operation of a NEM switch through the introduction of a novel pipe clip device structure and an effective air gap fabrication technique. This achievement is primarily attributed to the incorporation of a 4-nm-thick air gap, which is the smallest reported so far for a NEM switch generated using a 'top-down' approach. Our structure and process can potentially be utilized in various nanogap-related applications, including NEM switch-based ultralow-power integrated circuits, NEM resonators, nanogap electrodes for scientific research and sensors.

Use of a columnar metal thin film as a nanosieve with sub-10 nm pores

A columnar-structured nanosieve is unique in the sense that it is a general thin film formed by physical vapor deposition (PVD). Instead of additional processes to make nanopores, the numerous voids naturally formed among columnar grains during PVD are used as nanopores. Since the thin film formed by PVD has vertically grown columnar grains, the fabricated nanosieve has numerous straight-opened nanopores, which is an ideal structure for a nanosieve.

An electronic DNA sensor chip using integrated capacitive read-out circuit

This paper presents fully integrated label-free DNA recognition circuit based on capacitance measurement. A CMOS-based DNA sensor is implemented for the electrical detection of DNA hybridization. The proposed architecture detects the difference of capacitance through the integration of current mismatch of capacitance between reference electrodes functionalized with only single-stranded DNA and sensing electrodes bound with complementary DNA strands specifically. In addition, to minimize the effects of parallel resistance between electrodes and DNA layers, the compensation technique of leakage current through the use of constant current charging and discharging is implemented in the proposed detection circuit. The chip was fabricated in 0.35um 4-metal 2-poly CMOS process, and 16 × 8 sensing electrode arrays were fabricated by post-processing steps.

Analytical modeling and thermodynamic analysis of robust superhydrophobic surfaces with inverse-trapezoidal microstructures

A polydimethylsiloxane (PDMS) elastomer surface with perfectly ordered microstructures having an inverse-trapezoidal cross-sectional profile (simply PDMS trapezoids) showed superhydrophobic and transparent characteristics under visible light as reported in our previous work. The addition of a fluoropolymer (Teflon) coating enhances both features and provides oleophobicity. This paper focuses on the analytical modeling of the fabricated PDMS trapezoids structure and thermodynamic analysis based on the Gibbs free energy analysis. Additionally, the wetting characteristics of the fabricated PDMS trapezoids surface before and after the application of the Teflon coating are analytically explained. The Gibbs free energy analysis reveals that, due to the Teflon coating, the Cassie-Baxter state becomes energetically more favorable than the Wenzel state and the contact angle difference between the Cassie-Baxter state and the Wenzel state decreases. These two findings support the robustness of the superhydrophobicity of the fabricated Teflon-coated PDMS trapezoids. This is then verified via the impinging test of a water droplet at a high speed. The dependencies of the design parameters in the PDMS trapezoids on the hydrophobicity are also comprehensively studied through a thermodynamic analysis. Geometrical dependency on the hydrophobicity shows that overhang microstructures do not have a significant influence on the hydrophobicity. In contrast, the intrinsic contact angle of the structural material is most important in determining the apparent contact angle. On the other hand, the experimental results showed that the side angles of the overhangs are critical not for the hydrophobic but for the oleophobic property with liquids of a low surface tension. Understanding of design parameters in the PDMS trapezoids surface gives more information for implementation of superhydrophobic surfaces.

One-chip electronic detection of DNA hybridization using precision impedance-based CMOS array sensor

This paper describes a label-free and fully electronic detection method of DNA hybridization, which is achieved through the use of a 16×8 microarray sensor in conjunction with a new type of impedance spectroscopy constructed with standard complementary metal-oxide-semiconductor (CMOS) technology. The impedance-based method is based on changes in the reactive capacitance and the charge-transfer resistance after hybridization with complementary DNA targets. In previously published label-free techniques, the measured capacitance presented unstable capacitive properties due to the parallel resistance that is not infinite and can cause a leakage by discharging the charge on the capacitor. This paper presents an impedance extraction method that uses excitation by triangular wave voltage, which enables a reliable measurement of both C and R producing a highly sensitive sensor with a stable operation independent of external variables. The system was fabricated in an industrial 0.35-μm 4-metal 2-poly CMOS process, integrating working electrodes and readout electronics into one chip. The integrated readout, which uses a parasitic insensitive integrator, achieves an enlarged detection range and improved noise performance. The maximum average relative variations of C and R are 31.5% and 68.6%, respectively, after hybridization with a 1 μM target DNA. The proposed sensor allows quantitative evaluation of the molecule densities on the chip with distinguishable variation in the impedance. This fully electronic microsystem has great potential for use with bioanalytical tools and point-of-care diagnosis.

Electrowetting on a polymer microlens array

This paper reports on the electrowetting behavior of a flexible poly(dimethylsiloxane) (PDMS) microlens array. A Cr and Au double-layered electrode was formed on an array of microlenses with diameters of 10 microm and heights of 13 microm. A deposition of parylene and a coating of Teflon were followed for electrical insulation as well as for enhancement of the hydrophobicity. On the nearly superhydrophobic microlens array surface, the electrowetting of a deionized water droplet was observed over the contact angle range of approximately 140 degrees to approximately 58 degrees by applying 0-200 V, respectively. The electrowetting phenomenon was reversible even in air environment with applied voltages of less than 100 V. The electrowetting on the microlens array surface lost its reversibility after the microlens array surface was completely wetted when the water meniscus touched the bottom of the microlens array. Analysis of meniscus shapes and net force direction follows to elucidate the reversibility. The convex curvature of the microlens caused gradual rather than abrupt impalement of water into the gap among the microlenses.

A conventional route to scalable morphology-controlled regular structures and their superhydrophobic/hydrophilic properties for biochips application

We use a conventional and straightforward route to fabricate scalable morphology-controlled regular structures. This route is based on the etching of PDMS microlens array in CF4 and CF4/O2 plasma. PDMS microlens array can be changed to regularly isolated microdot structures array in CF4 plasma. Microbowl shaped structures array can be reached in CF4/O2 plasma. Moreover, a set of structures after CF4 plasma treatment display superhydrophobicity, while a set of structures after CF4/O2 plasma treatment present hydrophilicity. DNA molecules can be readily enriched on the hydrophilic surface. We believe that the regular structure array surfaces provide a useful inspiration towards biomolecular detection and transportation in biochips.

Simple liquid crystal display backlight unit comprising only a single-sheet micropatterned polydimethylsiloxane (PDMS) light-guide plate

A simple liquid crystal display (LCD) backlight unit (BLU) comprising only a single-sheet polydimethylsiloxane (PDMS) light-guide plate (LGP) has been developed. The PDMS LGP, having micropatterns with an inverse-trapezoidal cross section, was fabricated by backside 3-D diffuser lithography followed by PDMS-to-PDMS replication. The fabricated BLU showed an average luminance of 2878 cd/m(2) with 73.3% uniformity when mounted in a 5.08 cm backlight module with four side view 0.85cd LEDs. The developed BLU can greatly reduce the cost and thickness of LCDs, and it can be applied to flexible displays as a flexible light source due to the flexible characteristic of the PDMS itself.

Microlens array diffuser for a light-emitting diode backlight system

Microlens array (MLA) diffusers for light-emitting diode (LED) backlight systems have been developed. A high fill-factor photoresist mold for the MLA was fabricated using three-dimensional diffuser lithography, and the patterns were transferred to a nickel master mold for UV-curable polymer replication. The fabricated microlens had various paraboloidal profiles, and its aspect ratio was controlled from 1.0 to 2.1. The MLA diffuser showed a batwing radiation pattern with a radiation angle of 150 degrees. The fabricated MLA diffuser may greatly enhance the color-mixing characteristics of LED backlight systems and help reduce the number of LEDs required.

Shape-controlled, high fill-factor microlens arrays fabricated by a 3D diffuser lithography and plastic replication method

This paper describes a simple and effective method to fabricate a plastic microlens array with controllable shape and high fill-factor, which utilizes the conventional lithography and plastic replication. The only difference from conventional lithography is the insertion of a diffuser that randomizes paths of the incident ultraviolet (UV) light to form lens-like 3D latent image in a thick positive photoresist. After replication of the developed concave microlens mold onto the polydimethylsiloxane (PDMS), the focal length of the fabricated hemispherical microlens was observed to be 13-88 microm depending on the UV exposure dose. Two PDMS curing conditions were tested, where the elevated temperature of 85 masculineC resulted in smoother surface roughness of 2.6 nm in RMS value in the microlens mold. The proposed method can be extensively applied for microlens fabrication with other plastic materials due to its simplicity and versatility.

Non-apoptotic signaling pathways activated by soluble Fas ligand in serum-starved human fibroblasts. Mitogen-activated protein kinases and NF-kappaB-dependent gene expression

Many Fas-expressing cells do not undergo cell death upon Fas stimulation. In the normal human diploid cell line GM6112, the addition of soluble Fas ligand (sFasL) leads to morphological signs of cell death in less than 1% of cells. Treatment of serum-starved GM6112 fibroblasts with sFasL resulted in a rapid and transient phosphorylation of ERK1/2 without a significant increase in JNK and p38 activities. Unless co-treated with the protein synthesis inhibitor anisomycin, sFasL did not show gene-inducing activity in cells maintained in complete medium. However, when cells were serum-starved for 4 days, treatment with sFasL alone induced interleukin-6 gene expression and, less strongly, interleukin-8 gene expression. Sensitization of the gene-inducing activity by serum starvation correlated with NF-kappaB activation by sFasL. Furthermore, we found that the expression of FADD and caspase-8 was significantly reduced in serum-starved cells, whereas the level of cFLIP remained unchanged. Transfection of GM6112 cells with the antisense caspase-8 expression construct sensitized cells toward sFasL-induced NF-kappaB-dependent reporter activation. Our results support the notion that a change in the ratio of cFLIP and caspase-8 may be responsible for turning on the Fas-activated NF-kappaB pathway, which otherwise is supplanted by the death-inducing pathway.

Solution structures of the N-terminal domain of histone H4

Histones, nuclear proteins that interact with DNA to form nucleosomes, are essential for both the regulation of transcription and the packaging of DNA within chromosomes. The N-terminal domain of histone H4 contains four acetylation sites at lysine residues and may play a separate role in chromatin structure from the remainder of the H4 chain. We performed circular dichroism and NMR characterization of both native (H4NTP) and acetylated (Ace-H4NTP) peptides containing N-terminal acetylation domain of histone H4 for various pH environments. Data from CD and NMR suggested that H4NTP exhibited a pH-dependent conformational change, whereas the Ace-H4NTP is insensitive to pH change. However, both peptides showed a defined structural form at acidic pH environments. The solution structure for Ace-H4NTP shows two structurally independent regions comprising residues of Leu10-Gly13 and Arg19-Leu22, demonstrating relatively well-defined turn-type structures. Our results suggest that N-terminal acetylated region of H4 prefers an extended backbone conformation at neutral pH, however, upon acetylation, the regions containing lysine residues induce structural transition, having defined structural form for its optimum function.

The prevalence and types of androgenetic alopecia in Korean men and women

BACKGROUND

There are racial differences in the prevalence and types of androgenetic alopecia (AGA). There have been several reports on the prevalence and types of AGA in the general population of caucasians, but few studies on Koreans with samples of sufficient numbers have been reported.

OBJECTIVES

To obtain a more precise estimate of the prevalence and types of AGA in Korean men and women and to compare the results with those in caucasians.

METHODS

The prevalence and types of AGA were analysed in 10,132 Koreans (5531 men and 4601 women) who had visited the Health Examination Centre at Kyung Hee University Hospital for regular health examinations between December 1997 and July 1999. To classify the degree of hair loss for each subject, the Norwood classification was used in men and the Ludwig classification in women. For AGA in men, 'female pattern' was added to the Norwood classification.

RESULTS

In Korean men, the prevalence of AGA (Norwood III or above) at all ages was 14.1%. It increased steadily with advancing age, but was lower than that of caucasians: 2.3% in the third decade, 4.0% in the fourth decade, 10.8% in the fifth decade, 24.5% in the sixth decade, 34.3% in the seventh decade and 46.9% over 70 years. Type III vertex involvement was the most common type in the third decade to the seventh decade; over 70 years, type VI was most common. A 'female pattern' was observed in 11.1% of cases. In Korean women, the prevalence of AGA (Ludwig I or above) at all ages was 5.6%. It also increased steadily with advancing age: 0.2% in the third decade, 2.3% in the fourth decade, 3.8% in the fifth decade, 7.4% in the sixth decade, 11.7% in the seventh decade and 24.7% over 70 years. Grade I was the most common type up to the sixth decade; over 60 years, grade I and II were similar in prevalence. Grade III (total baldness) was not observed. A family history of baldness was present in 48.5% of men and 45.2% of women with AGA.

CONCLUSIONS

The prevalence of AGA in Korean men and women was lower than that in caucasians, as recorded in the literature. Korean men tend to have more frontal hairline preservation and show a more 'female pattern' of hair thinning than caucasians. Therefore, 'female pattern' should be added to the classification of AGA.

Co K-edge XAS study on a new cobalt-doped-SiO2 pillared clay

New Co-doped-SiO2-sol pillared montmorillonite has been synthesized by interlayer hydrolysis and condensation of tetraethylorthosilicate (TEOS) in the presence of Co2+ ion using an organic template. The Co K-edge XANES and EXAFS analyses for the CoO-SiO2-PILC (before and after calcination) and for the references such as CoO and Co(OH)2 were performed in order to obtain electronic and local structural information of cobalt species, which may act as a catalytic active site for the selective reduction of NO(x), hydrodesulfurization, and Fischer-Tropsch reaction. According to the XANES spectra, the divalent cobalt ion is stabilized in an octahedral symmetry. The EXAFS result shows a significant change in local symmetry around cobalt ion upon calcination. The EXAFS fitting result before calcination shows that the cobalt species is in the form of hydroxide, with a small number of (Co-Co) pairs compared to the bulk Co(OH)2. After calcining at 550 degrees C, the first nearest neighbours were fitted to six oxygen atoms with two different distances, and the second and the third neighbours were fitted to two Si and one Co atoms. It is, therefore, reasonable to suggest a structure model, where the cobalt species on the SiO2 sol exists as a nano cluster of Co(OH)2 before calcination but transforms to a nanosized cobalt oxide covalently bound to the surface of SiO2 pillar after calcination.

In situ XAFS study at the Zr K-edge for SiO2/ZrO2 nano-sol

The structural characterisation of SiO2/ZrO2 nano-sol particles, prepared by mixing SiO2 sol and aqueous solution of ZrOCl2 8H2O, has been carried out by in-situ XAS measurement at the Zr K-edge during condensation reaction. The detailed XANES features at the Zr K-edge of the mixed sol of SiO2/ZrO2 are compared with those of other references such as ZrO2, ZrOCl2 8H2O. BaZrO3, and ZrSiO4, and it becomes obvious that the Zr4+ ions are stabilised in an octahedral symmetry. The EXAFS result also indicates that each Zr atom is coordinated with six oxygen ones as the first nearest neighbour, where two oxygen atoms are from the linkage of (Si-O-Zr) at short distance, and four ones are from water molecules at long distance. As the condensation reaction proceeds, it is found that the number of oxygen atoms due to the formation of (Si-O-Zr) bond at short distance and the second neighbour of silicon atoms increase simultaneously. From the above EXAFS and XANES results, the structural and gelating models could be proposed, which is based on the octahedrally coordinated but distorted zirconium species attaching on the SiO2 sol surface.