Multilayer WS2 for low-power visible and near-infrared phototransistors

Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.

Defective ZrSe2: a promising candidate for spintronics applications

The current study presents the electronic and magnetic properties of monolayer ZrSe2nanoribbons. The impact of various point defects in the form of Zr or Se vacancies, and their combinations, on the nanoribbon electronic and magnetic properties are investigated using density functional theory calculations in hydrogen-terminated zigzag and armchair ZrSe2nanoribbons. Although pristine ZrSe2is non-magnetic, all the defective ZrSe2structures exhibit ferromagnetic behavior. Our calculated results also show that the Zr and Se vacancy defects alter the total spin magnetic moment with D6Se,leading to a significant amount of 6.34µB in the zigzag nanoribbon, while the largest magnetic moment of 5.52µB is induced by D2Se-2in the armchair structure, with the spin density predominantly distributed around the Zr atoms near the defect sites. Further, the impact of defects on the performance of the ZrSe2nanoribbon-based devices is investigated. Our carrier transport calculations reveal spin-polarized current-voltage characteristics for both the zigzag and armchair devices, revealing negative differential resistance (NDR) feature. Moreover, the current level in the zigzag-based nanoribbon devices is ∼10 times higher than the armchair devices, while the peak-to-valley ratio is more pronounced in the armchair-based nanoribbon devices. It is also noted that defects increase the current level in the zigzag devices while they lead to multiple NDR peaks with rather negligible change in the current level in the armchair devices. Our results on the defective ZrSe2structures, as opposed to the pristine ones that are previously studied, provide insight into ZrSe2material and device properties as a promising nanomaterial for spintronics applications and can be considered as practical guidance to experimental work.

Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives

Two-dimensional materials, including molybdenum disulfide (MoS2), present promising sensing and detecting capabilities thanks to their extreme sensitivity to changes in the environment. Their reduced thickness also facilitates the electrostatic control of the channel and opens the door to flexible electronic applications. However, these materials still exhibit integration difficulties with complementary-MOS standardized processes and methods. The device reliability is compromised by gate insulator selection and the quality of the metal/semiconductor and semiconductor/insulator interfaces. Despite some improvements regarding mobility, hysteresis and Schottky barriers having been reported thanks to metal engineering, vertically stacked heterostructures with compatible thin-layers (such as hexagonal boron nitride or device encapsulation) variability is still an important constraint to sensor performance. In this work, we fabricated and extensively characterized the reliability of as-synthesized back-gated MoS2 transistors. Under atmospheric and room-temperature conditions, these devices present a wide electrical hysteresis (up to 5 volts) in their transfer characteristics. However, their performance is highly influenced by the temperature, light and pressure conditions. The singular signature in the time response of the devices points to adsorbates and contaminants inducing mobile charges and trapping/detrapping carrier phenomena as the mechanisms responsible for time-dependent current degradation. Far from being only a reliability issue, we demonstrated a method to exploit this device response to perform light, temperature and/or pressure sensors in as-synthesized devices. Two orders of magnitude drain current level differences were demonstrated by comparing device operation under light and dark conditions while a factor up to 105 is observed at vacuum versus atmospheric pressure environments.

Insights into Multilevel Resistive Switching in Monolayer MoS2

The advent of two-dimensional materials has opened a plethora of opportunities in accessing ultrascaled device dimensions for future logic and memory applications. In this work, we demonstrate that a single layer of large-area chemical vapor deposition-grown molybdenum disulfide (MoS₂) sandwiched between two metal electrodes can be tuned to show multilevel nonvolatile resistive memory states with resistance values separated by 5 orders of magnitude. The switching process is unipolar and thermochemically driven requiring significant Joule heating in the reset process. Temperature-dependent electrical measurements coupled with semiclassical charge transport models suggest that the transport in these devices varies significantly in the initial (pristine) state, high resistance state, and low resistance state. In the initial state, the transport is a one-step direct tunneling (at low voltage biases) and Fowler Nordeim tunneling (at higher bias) with an effective barrier height of 0.33 eV, which closely matches the Schottky barrier at the MoS₂/Au interface. In the high resistive state, trap-assisted tunneling provides a reasonable fit to experimental data for a trap height of 0.82 eV. Density functional theory calculations suggest the possibility of single- and double-sulfur vacancies as the microscopic origins of these trap sites. The temperature-dependent behavior of the set and reset process are explained by invoking the probability of defect (sulfur vacancy) creation and mobility of sulfur ions. Finally, conductive atomic force microscopy measurements confirm that the multifilamentary resistive memory effects are inherent to a single-crystalline MoS₂ triangle and not necessarily dependent on grain boundaries. The insights suggested in this work are envisioned to open up possibilities for ultrascaled, multistate, resistive memories for next-generation digital memory and neuromorphic applications.

Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation

Forming gas annealing is a common process step used to improve the performance of devices based on transition-metal dichalcogenides (TMDs). Here, the impact of forming gas anneal is investigated for PtSe₂-based devices. A range of annealing temperatures (150, 250, and 350 °C) were used both in inert (0/100% H₂/N₂) and forming gas (5/95% H₂/N₂) environments to separate the contribution of temperature and ambient. The samples are electrically characterized by circular transfer length method structures, from which contact resistance and sheet resistance are analyzed. Ti and Ni are used as metal contacts. Ti does not react with PtSe₂ at any given annealing step. In contrast to this, Ni reacts with PtSe₂, resulting in a contact alloy formation. The results are supported by a combination of X-ray photoelectron spectroscopy, Raman spectroscopy, energy-dispersive X-ray spectroscopy, and cross-sectional transmission electron microscopy. The work sheds light on the impact of forming gas annealing on TMD-metal interfaces, and on the TMD film itself, which could be of great interest to improve the contact resistance of TMD-based devices.

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

The unique properties of topological insulators such as Bi₂Se₃ are intriguing for their potential implementation in novel device architectures for low power and defect-tolerant logic and memory devices. Recent improvements in the synthesis of Bi₂Se₃ have positioned researchers to fabricate new devices to probe the limits of these materials. The fabrication of such devices, of course, requires etching of the topological insulator, in addition to other materials including gate oxides and contacts which may impact the topologically protected surface states. In this paper, we study the impact of He⁺ sputtering and inductively coupled plasma Cl₂ and SF₆ reactive etch chemistries on the physical, chemical, and electronic properties of Bi₂Se₃. Chemical analysis by X-ray photoelectron spectroscopy tracks changes in the surface chemistry and Fermi level, showing preferential removal of Se that results in vacancy-induced n-type doping. Chlorine-based chemistry successfully etches Bi₂Se₃ but with residual Se-Se bonding and interstitial Cl species remaining after the etch. The Se vacancies and residuals can be removed with postetch anneals in a Se environment, repairing Bi₂Se₃ nearly to the as-grown condition. Critically, in each of these cases, angle-resolved photoemission spectroscopy (ARPES) reveals that the topologically protected surface states remain even after inducing significant surface disorder and chemical changes, demonstrating that topological insulators are quite promising for defect-tolerant electronics. Changes to the ARPES intensity and momentum broadening of the surface states are discussed. Fluorine-based etching aggressively reacts with the film resulting in a relatively thick insulating film of thermodynamically favored BiF₃ on the surface, prohibiting the use of SF₆-based etching in Bi₂Se₃ processing.

Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes

Platinum diselenide (PtSe₂) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report on vertical hybrid Schottky barrier diodes (SBDs) of two-dimensional (2D) PtSe₂ thin films on crystalline n-type silicon. The diodes have been fabricated by transferring large-scale layered PtSe₂ films, synthesized by thermally assisted conversion of predeposited Pt films at back-end-of-the-line CMOS compatible temperatures, onto SiO₂/Si substrates. The diodes exhibit obvious rectifying behavior with a photoresponse under illumination. Spectral response analysis reveals a maximum responsivity of 490 mA/W at photon energies above the Si bandgap and relatively weak responsivity, in the range of 0.1-1.5 mA/W, at photon energies below the Si bandgap. In particular, the photoresponsivity of PtSe₂ in infrared allows PtSe₂ to be utilized as an absorber of infrared light with tunable sensitivity. The results of our study indicate that PtSe₂ is a promising option for the development of infrared absorbers and detectors for optoelectronics applications with low-temperature processing conditions.

Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2-RuO2 Alloy Schottky Contacts for Silicon Photoanodes

We synthesized nanoscale TiO2-RuO2 alloys by atomic layer deposition (ALD) that possess a high work function and are highly conductive. As such, they function as good Schottky contacts to extract photogenerated holes from n-type silicon while simultaneously interfacing with water oxidation catalysts. The ratio of TiO2 to RuO2 can be precisely controlled by the number of ALD cycles for each precursor. Increasing the composition above 16% Ru sets the electronic conductivity and the metal work function. No significant Ohmic loss for hole transport is measured as film thickness increases from 3 to 45 nm for alloy compositions ≥ 16% Ru. Silicon photoanodes with a 2 nm SiO2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% Ru exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO2-RuO2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.

Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance

Silicon photoanodes protected by atomic layer deposited (ALD) TiO2 show promise as components of water splitting devices that may enable the large-scale production of solar fuels and chemicals. Minimizing the resistance of the oxide corrosion protection layer is essential for fabricating efficient devices with good fill factor. Recent literature reports have shown that the interfacial SiO2 layer, interposed between the protective ALD-TiO2 and the Si anode, acts as a tunnel oxide that limits hole conduction from the photoabsorbing substrate to the surface oxygen evolution catalyst. Herein, we report a significant reduction of bilayer resistance, achieved by forming stable, ultrathin (<1.3 nm) SiO2 layers, allowing fabrication of water splitting photoanodes with hole conductances near the maximum achievable with the given catalyst and Si substrate. Three methods for controlling the SiO2 interlayer thickness on the Si(100) surface for ALD-TiO2 protected anodes were employed: (1) TiO2 deposition directly on an HF-etched Si(100) surface, (2) TiO2 deposition after SiO2 atomic layer deposition on an HF-etched Si(100) surface, and (3) oxygen scavenging, post-TiO2 deposition to decompose the SiO2 layer using a Ti overlayer. Each of these methods provides a progressively superior means of reliably thinning the interfacial SiO2 layer, enabling the fabrication of efficient and stable water oxidation silicon anodes.

Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes

Metal oxide protection layers for photoanodes may enable the development of large-scale solar fuel and solar chemical synthesis, but the poor photovoltages often reported so far will severely limit their performance. Here we report a novel observation of photovoltage loss associated with a charge extraction barrier imposed by the protection layer, and, by eliminating it, achieve photovoltages as high as 630 mV, the maximum reported so far for water-splitting silicon photoanodes. The loss mechanism is systematically probed in metal-insulator-semiconductor Schottky junction cells compared to buried junction p(+)n cells, revealing the need to maintain a characteristic hole density at the semiconductor/insulator interface. A leaky-capacitor model related to the dielectric properties of the protective oxide explains this loss, achieving excellent agreement with the data. From these findings, we formulate design principles for simultaneous optimization of built-in field, interface quality, and hole extraction to maximize the photovoltage of oxide-protected water-splitting anodes.

Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching.PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea.

Assessment of antibiotic aerosol generation using commercial jet nebulizers

The performance of 14 commercial jet nebulisers has been assessed; Unineb, Suremist (Unimed (UK) Ltd), Micro-Cirrus (Intersurgical Ltd), Pulmo-Neb (DeVilbiss Health Care UK Ltd), Side-Stream (Medic-Aid Ltd), Micro-Neb III (Lifecare Ltd), RespirGard (Marquest Medical Products Inc), Aeromist, Venticaire (S and W Vickers Ltd), Up-Draft II, Ava-Neb, Up-Draft (Hudson Respiratory Care Inc), Bennett/Twin, Raindrop (Puritan-Bennett Corporation). The units were operated with a high flow compressor (Maxi III, Medix Ltd) at 101/min. Performance was assessed by measuring the fraction of the initial mass of drug released as an aerosol and nebulisation time for initial drug volume of 2-6mls, and the mass median diameter and mass fraction of the aerosol in particles < 5.17 microns diameter. The Side-Stream nebuliser gave the best performance, although incorporation of a filter to trap exhaled antibiotic may prove difficult. The Micro-Cirrus generated a particularly fine aerosol. The Raindrop nebuliser performed well, while the Up-Draft II nebulised efficiently but was associated with extended nebulisation times which may limit its utility.