Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction

Two-dimensional (2D) materials stand as a promising platform for tunnel field-effect transistors (TFETs) in the pursuit of low-power electronics for the Internet of Things era. This promise arises from their dangling bond-free van der Waals heterointerface. Nevertheless, the attainment of high device performance is markedly impeded by the requirement of precise control over the 2D assembly with multiple stacks of different layers. In this study, we addressed a thickness-modulated n/p+-homojunction prepared from Nb-doped p+-MoS2 crystal, where the issue on interface traps can be neglected without any external interface control due to the homojunction. Notably, our observations reveal the existence of a negative differential resistance, even at room temperature (RT). This signifies the successful realization of TFET operation under type III band alignment conditions by a single gate at RT, suggesting that the dominant current mechanism is band-to-band tunneling due to the ideal interface.

Nanoscrolls of Janus Monolayer Transition Metal Dichalcogenides

Tubular structures of transition metal dichalcogenides (TMDCs) have attracted attention in recent years due to their emergent physical properties, such as the giant bulk photovoltaic effect and chirality-dependent superconductivity. To understand and control these properties, it is highly desirable to develop a sophisticated method to fabricate TMDC tubular structures with smaller diameters and a more uniform crystalline orientation. For this purpose, the rolling up of TMDC monolayers into nanoscrolls is an attractive approach to fabricating such a tubular structure. However, the symmetric atomic arrangement of a monolayer TMDC generally makes its tubular structure energetically unstable due to considerable lattice strain in curved monolayers. Here, we report the fabrication of narrow nanoscrolls by using Janus TMDC monolayers, which have an out-of-plane asymmetric structure. Janus WSSe and MoSSe monolayers were prepared by the plasma-assisted surface atom substitution of WSe2 and MoSe2 monolayers, respectively, and then were rolled by solution treatment. The multilayer tubular structures of Janus nanoscrolls were revealed by scanning transmission electron microscopy observations. Atomic resolution elemental analysis confirmed that the Janus monolayers were rolled up with the Se-side surface on the outside. We found that the present nanoscrolls have the smallest diameter of about 5 nm, which is almost the same as the value predicted by the DFT calculation. The difference in work functions between the S- and Se-side surfaces was measured by Kelvin probe force microscopy, which is in good agreement with the theoretical prediction. Strong interlayer interactions and anisotropic optical responses of the Janus nanoscrolls were also revealed by Raman and photoluminescence spectroscopy.

Semiconducting Transition Metal Dichalcogenide Heteronanotubes with Controlled Outer-Wall Structures

Transition metal dichalcogenide (TMDC) nanotubes exhibit unique physical properties due to their nanotube structures. The development of techniques for synthesizing TMDC nanotubes with controlled structures is very important for their science and applications. However, structural control efforts have been made only for the homostructures of TMDC nanotubes and not for their heterostructures that provide an important platform for their two-dimensional counterparts. In this study, we synthesized heterostructures of TMDC nanotubes, MoS2/WS2 heteronanotubes, and demonstrated a technique for controlling features of their structures, such as diameters, layer numbers, and crystallinity. The diameter of the heteronanotubes could be tuned with inner nanotube templates and was reduced by using small-diameter WS2 nanotubes. The layer number and crystallinity of the MoS2 outer wall could be controlled by controlling their precursors and synthesis temperatures, resulting in the formation of high-crystallinity TMDC heteronanotubes with specific chirality. This study can expand the research of van der Waals heterostructures.

Structural Diversity of Single-Walled Transition Metal Dichalcogenide Nanotubes Grown via Template Reaction

Monolayers of transition metal dichalcogenides (TMDs) are an ideal 2D platform for studying a wide variety of electronic properties and potential applications due to their chemical diversity. Similarly, single-walled TMD nanotubes (SW-TMDNTs)-seamless cylinders of rolled-up TMD monolayers-are 1D materials that can exhibit tunable electronic properties depending on both their chirality and composition. However, much less has been explored about their geometrical structures and chemical variations due to their instability under ambient conditions. Here, the structural diversity of SW-TMDNTs templated by boron nitride nanotubes (BNNTs) is reported. The outer surfaces and inner cavities of the BNNTs promote and stabilize the coaxial growth of SW-TMDNTs with various diameters, including few-nanometers-wide species. The chiral indices (n,m) of individual SW-MoS2 NTs are assigned by high-resolution transmission electron microscopy, and statistical analyses reveals a broad chirality distribution ranging from zigzag to armchair configurations. Furthermore, this methodology can be applied to the synthesis of various TMDNTs, such as selenides and alloyed Mo1- x Wx S2 . Comprehensive microscopic and spectroscopic analyses also suggest the partial formation of Janus MoS2(1- x ) Se2 x nanotubes. The BNNT-templated reaction provides a universal platform to characterize the chirality-dependent properties of 1D nanotubes with various electronic structures.

Remote Excitation of Tip-Enhanced Photoluminescence with a Parallel AgNW Coupler

Tip-enhanced photoluminescence (TEPL) microscopy allows for the correlation of scanning probe microscopic images and photoluminescent spectra at the nanoscale level in a similar way to tip-enhanced Raman scattering (TERS) microscopy. However, due to the higher cross-section of fluorescence compared to Raman scattering, the diffraction-limited background signal generated by far-field excitation is a limiting factor in the achievable spatial resolution of TEPL. Here, we demonstrate a way to overcome this drawback by using remote excitation TEPL (RE-TEPL). With this approach, the excitation and detection positions are spatially separated, minimizing the far-field contribution. Two probe designs are evaluated, both experimentally and via simulations. The first system consists of gold nanoparticles (AuNPs) through photoinduced deposition on a silver nanowire (AgNW), and the second system consists of two offset parallel AgNWs. This latter coupler system shows a higher coupling efficiency and is used to successfully demonstrate RE-TEPL spectral mapping on a MoSe2/WSe2 lateral heterostructure to reveal spatial heterogeneity at the heterojunction.

Synthesis and optical properties of WS2 nanotubes with relatively small diameters

Tungsten disulfide (WS2) nanotubes exhibit various unique properties depending on their structures, such as their diameter and wall number. The development of techniques to prepare WS2 nanotubes with the desired structure is crucial for understanding their basic properties. Notably, the synthesis and characterization of multi-walled WS2 nanotubes with small diameters are challenging. This study reports the synthesis and characterization of small-diameter WS2 nanotubes with an average inner diameter of 6 nm. The optical absorption and photoluminescence (PL) spectra of the as-prepared nanotubes indicate that a decrease in the nanotube diameter induces a red-shift in the PL, suggesting that the band gap narrowed due to a curvature effect, as suggested by theoretical calculations.

High-throughput dry transfer and excitonic properties of twisted bilayers based on CVD-grown transition metal dichalcogenides

van der Waals (vdW) layered materials have attracted much attention because their physical properties can be controlled by varying the twist angle and layer composition. However, such twisted vdW assemblies are often prepared using mechanically exfoliated monolayer flakes with unintended shapes through a time-consuming search for such materials. Here, we report the rapid and dry fabrication of twisted multilayers using chemical vapor deposition (CVD) grown transition metal chalcogenide (TMDC) monolayers. By improving the adhesion of an acrylic resin stamp to the monolayers, the single crystals of various TMDC monolayers with desired grain size and density on a SiO2/Si substrate can be efficiently picked up. The present dry transfer process demonstrates the one-step fabrication of more than 100 twisted bilayers and the sequential stacking of a twisted 10-layer MoS2 single crystal. Furthermore, we also fabricated hBN-encapsulated TMDC monolayers and various twisted bilayers including MoSe2/MoS2, MoSe2/WSe2, and MoSe2/WS2. The interlayer interaction and quality of dry-transferred, CVD-grown TMDCs were characterized by using photoluminescence (PL), cathodoluminescence (CL) spectroscopy, and cross-sectional electron microscopy. The prominent PL peaks of interlayer excitons can be observed for MoSe2/MoS2 and MoSe2/WSe2 with small twist angles at room temperature. We also found that the optical spectra were locally modulated due to nanosized bubbles, which are formed by the presence of interface carbon impurities. The present findings indicate the widely applicable potential of the present method and enable an efficient search of the emergent optical and electrical properties of TMDC-based vdW heterostructures.

Self-Limiting Growth of Monolayer Tungsten Disulfide Nanoribbons on Tungsten Oxide Nanowires

Transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials for next-generation optoelectronic devices; they can also provide opportunities for further advances in physics. Structuring 2D TMDC sheets as nanoribbons has tremendous potential for electronic state modification. However, a bottom-up synthesis of long TMDC nanoribbons with high monolayer selectivity on a large scale has not yet been reported yet. In this study, we successfully synthesized long W_xO_y nanowires and grew monolayer WS₂ nanoribbons on their surface. The supply of source atoms from a vapor-solid bilayer and chemical reaction at the atomic-scale interface promoted a self-limiting growth process. The developed method exhibited a high monolayer selection yield on a large scale and enabled the growth of long (∼100 μm) WS₂ nanoribbons with electronic properties characterized by optical spectroscopy and electrical transport measurements. The produced nanoribbons were isolated from W_xO_y nanowires by mechanical exfoliation and used as channels for field-effect transistors. The findings of this study can be used in future optoelectronic device applications and advanced physics research.

Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics

In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition (CVD), and their optical and electrical properties have been investigated. However, the low dielectric properties of monolayers prevent the generation of high concentrations of thermally excited carriers from doped impurities. To solve this issue, multilayer TMDCs are a promising component for various electronic devices due to the availability of degenerate semiconductors. Here, we report the fabrication and transport properties of multilayer TMDC-based in-plane heterostructures. The multilayer in-plane heterostructures are formed through CVD growth of multilayer MoS₂ from the edges of mechanically exfoliated multilayer flakes of WSe₂ or Nb_xMo_1-xS₂. In addition to the in-plane heterostructures, we also confirmed the vertical growth of MoS₂ on the exfoliated flakes. For the WSe₂/MoS₂ sample, an abrupt composition change is confirmed by cross-sectional high-angle annular dark-field scanning transmission electron microscopy. Electrical transport measurements reveal that a tunneling current flows at the Nb_xMo_1-xS₂/MoS₂ in-plane heterointerface, and the band alignment is changed from a staggered gap to a broken gap by electrostatic electron doping of MoS₂. The formation of a staggered gap band alignment of Nb_xMo_1-xS₂/MoS₂ is also supported by first-principles calculations.

Vapor-Phase Indium Intercalation in van der Waals Nanofibers of Atomically Thin W6Te6 Wires

One-dimensional (1D) conducting materials are of great interest as potential building blocks for integrated nanocircuits. Ternary 1D transition-metal chalcogenides, consisting of M₆X₆ wires with intercalated A atoms (M = Mo or W; X = S, Se, or Te; A = alkali or rare metals, etc.), have attracted much attention due to their 1D metallic behavior, superconductivity, and mechanical flexibility. However, the conventional solid-state reaction usually produces micrometer-scale bulk crystals, limiting their potential use as nanoscale conductors. Here we demonstrate a versatile method to fabricate indium (In)-intercalated W₆Te₆ (In-W₆Te₆) bundles with a nanoscale thickness. We first prepared micrometer-long, crystalline bundles of van der Waals W₆Te₆ wires using chemical vapor deposition and intercalated In into the crystal via a vapor-phase reaction. Atomic-resolution electron microscopy revealed that In atoms were surrounded by three adjacent W₆Te₆ wires. First-principles calculations suggested that their wire-by-wire stacking can transform through postgrowth intercalation. Individual In-W₆Te₆ bundles exhibited metallic behavior, as theoretically predicted. We further identified the vibrational modes by combining polarized Raman spectroscopy and nonresonant Raman calculations.

Observation of the photovoltaic effect in a van der Waals heterostructure

van der Waals (vdW) heterostructures, which can be assembled with various two-dimensional materials, provide a versatile platform for exploring emergent phenomena. Here, we report an observation of the photovoltaic effect in a WS₂/MoS₂ vdW heterostructure. Light excitation of WS₂/MoS₂ at a wavelength of 633 nm yields a photocurrent without applying bias voltages, and the excitation power dependence of the photocurrent shows characteristic crossover from a linear to square root dependence. Photocurrent mapping has clearly shown that the observed photovoltaic effect arises from the WS₂/MoS₂ region, not from Schottky junctions at electrode contacts. Kelvin probe microscopy observations show no slope in the electrostatic potential, excluding the possibility that the photocurrent originates from an unintentionally formed built-in potential.

Continuous Color-Tunable Light-Emitting Devices Based on Compositionally Graded Monolayer Transition Metal Dichalcogenide Alloys

The diverse series of transition metal dichalcogenide (TMDC) materials has been employed in various optoelectronic applications, such as photodetectors, light-emitting diodes, and lasers. Typically, the detection or emission range of optoelectronic devices is unique to the bandgap of the active material. Therefore, to improve the capability of these devices, extensive efforts have been devoted to tune the bandgap, such as gating, strain, and dielectric engineering. However, the controllability of these methods is severely limited (typically ≈0.1 eV). In contrast, alloying TMDCs is an effective approach that yields a composition-dependent bandgap and enables light emissions over a wide range. In this study, a color-tunable light-emitting device using compositionally graded TMDC alloys is fabricated. The monolayer WS₂ /WSe₂ alloy grown by chemical vapor deposition shows a spatial gradient in the light-emission energy, which varies from 2.1 to 1.7 eV. This alloy is incorporated in an electrolyte-based light-emitting device structure that can tune the recombination zone laterally. Thus, a continuous and reversible color-tunable light-emitting device is successfully fabricated by controlling the light-emitting positions. The results provide a new approach for exploring monolayer semiconductor-based broadband optical applications.

Surfactant-Assisted Isolation of Small-Diameter Boron-Nitride Nanotubes for Molding One-Dimensional van der Waals Heterostructures

Rolling two-dimensional (2D) materials into 1D nanotubes allows for greater functionality. Boron-nitride nanotubes (BNNTs) can serve as insulating 1D templates for the coaxial growth of guest nanotubes, without interfering with property characterization. However, their application as 1D templates has been greatly hindered by their poor dispersibility, inevitably resulting in the formation of thick bundles. Here we present the facile preparation of well-dispersed BNNT templates via surfactant dispersions and synthesis of 1D van der Waals heterostructures based on the BNNTs. Comprehensive microscopic analyses show the isolation of clean, high-quality BNNTs. Statistical analyses revealed that small-diameter double-walled BNNTs are highly enriched by chemical peeling of BN sidewalls through the sonication process. We further demonstrate that the isolated BNNTs can template the coaxial growth of carbon and MoS₂ nanotubes by using chemical vapor deposition. The present strategy can be applied to the synthesis of a variety of nanotubes, thereby allowing for their characterization.

Large-Scale 1T'-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition

The control of crystal polymorphism and exploration of metastable, two-dimensional, 1T'-phase, transition-metal dichalcogenides (TMDs) have received considerable research attention. 1T'-phase TMDs are expected to offer various opportunities for the study of basic condensed matter physics and for its use in important applications, such as devices with topological states for quantum computing, low-resistance contact for semiconducting TMDs, energy storage devices, and as hydrogen evolution catalysts. However, due to the high energy difference and phase change barrier between 1T' and the more stable 2H-phase, there are few methods that can be used to obtain monolayer 1T'-phase TMDs. Here, we report on the chemical vapor deposition (CVD) growth of 1T'-phase WS₂ atomic layers from gaseous precursors, i.e., H₂S and WF₆, with alkali metal assistance. The gaseous nature of the precursors, reducing properties of H₂S, and presence of Na⁺, which acts as a countercation, provided an optimal environment for the growth of 1T'-phase WS₂, resulting in the formation of high-quality submillimeter-sized crystals. The crystal structure was characterized by atomic-resolution scanning transmission electron microscopy, and the zigzag chain structure of W atoms, which is characteristic of the 1T' structure, was clearly observed. Furthermore, the grown 1T'-phase WS₂ showed superconductivity with the transition temperature in the 2.8-3.4 K range and large upper critical field anisotropy. Thus, alkali metal assisted gas-source CVD growth is useful for realizing large-scale, high-quality, phase-engineered TMD atomic layers via a bottom-up synthesis.

Surface Diffusion-Limited Growth of Large and High-Quality Monolayer Transition Metal Dichalcogenides in Confined Space of Microreactor

Transition metal dichalcogenides (TMDCs), including MoS₂ and WS₂, are potential candidates for next-generation semiconducting materials owing to their atomically thin structure and strong optoelectrical responses, which allow for flexible optoelectronic applications. Monolayer TMDCs have been grown utilizing chemical vapor deposition (CVD) techniques. Enhancing the domain size with high crystallinity and forming heterostructures are important topics for practical applications. In this study, the size of monolayer WS₂ increased via the vapor-liquid-solid growth-based CVD technique utilizing the confined space of the substrate-stacked microreactor. The use of spin-coated metal salts (Na₂WO₄ and Na₂MoO₄) and organosulfur vapor allowed us to precisely control the source supply and investigate the growth in a systematic manner. We obtained a relatively low activation energy for growth (1.02 eV), which is consistent with the surface diffusion-limited growth regime observed in the confined space. Through systematic photoluminescence (PL) analysis, we determined that a growth temperature of ∼820 °C is optimal for producing high-quality WS₂ with a narrow PL peak width (∼35 meV). By controlling the source balance of W and S, we obtained large-sized fully monolayered WS₂ (∼560 μm) and monolayer WS₂ with bilayer spots (∼1100 μm). Combining two distinct sources of transition metals, WS₂/MoS₂ lateral heterostructures were successfully created. In electrical transport measurements, the monolayer WS₂ grown under optimal conditions has a high on-current (∼70 μA/μm), on/off ratio (∼5 × 10⁸), and a field-effect mobility of ∼7 cm²/(V s). The field-effect transistor displayed an intrinsic photoresponse with wavelength selectivity that originated from the photoexcited carriers.

Directional Exciton-Energy Transport in a Lateral Heteromonolayer of WSe2-MoSe2

Controlling the direction of exciton-energy flow in two-dimensional (2D) semiconductors is crucial for developing future high-speed optoelectronic devices using excitons as the information carriers. However, intrinsic exciton diffusion in conventional 2D semiconductors is omnidirectional, and efficient exciton-energy transport in a specific direction is difficult to achieve. Here we demonstrate directional exciton-energy transport across the interface in tungsten diselenide (WSe₂)-molybdenum diselenide (MoSe₂) lateral heterostructures. Unidirectional transport is spontaneously driven by the built-in asymmetry of the exciton-energy landscape with respect to the heterojunction interface. At excitation positions close to the interface, the exciton photoluminescence (PL) intensity was substantially decreased in the WSe₂ region and enhanced in the MoSe₂ region. In PL excitation spectroscopy, it was confirmed that the observed phenomenon arises from lateral exciton-energy transport from WSe₂ to MoSe₂. This directional exciton-energy flow in lateral 2D heterostructures can be exploited in future optoelectronic devices.

Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation

The past decades of materials science discoveries are the basis of our present society - from the foundation of semiconductor devices to the recent development of internet of things (IoT) technologies. These materials science developments have depended mainly on control of rigid chemical bonds, such as covalent and ionic bonds, in organic molecules and polymers, inorganic crystals and thin films. The recent discovery of graphene and other two-dimensional (2D) materials offers a novel approach to synthesizing materials by controlling their weak out-of-plane van der Waals (vdW) interactions. Artificial stacks of different types of 2D materials are a novel concept in materials synthesis, with the stacks not limited by rigid chemical bonds nor by lattice constants. This offers plenty of opportunities to explore new physics, chemistry, and engineering. An often-overlooked characteristic of vdW stacks is the well-defined 2D nanospace between the layers, which provides unique physical phenomena and a rich field for synthesis of novel materials. Applying the science of intercalation compounds to 2D materials provides new insights and expectations about the use of the vdW nanospace. We call this nascent field of science '2.5 dimensional (2.5D) materials,' to acknowledge the important extra degree of freedom beyond 2D materials. 2.5D materials not only offer a new field of scientific research, but also contribute to the development of practical applications, and will lead to future social innovation. In this paper, we introduce the new scientific concept of this science of '2.5D materials' and review recent research developments based on this new scientific concept.

Versatile Post-Doping toward Two-Dimensional Semiconductors

We have developed a simple and straightforward way to realize controlled postdoping toward 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic-energy dopant beams and a high-flux chalcogen beam simultaneously, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. The electronic properties of doped TMDs (Nb-doped WSe₂) have shown drastic change and p-type action with more than 2 orders of magnitude increase in current. Position-selective doping has also been demonstrated by the postdoping toward TMDs with a patterned mask on the surface. The postdoping method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.

Control of Thermal Conductance across Vertically Stacked Two-Dimensional van der Waals Materials via Interfacial Engineering

A comprehensive understanding of the roles of various nanointerfaces in thermal transport is of critical significance but remains challenging. A two-dimensional van der Waals (vdW) heterostructure with tunable interface lattice mismatch provides an ideal platform to explore the correlation between thermal properties and nanointerfaces and achieve controllable tuning of heat flow. Here, we demonstrate that interfacial engineering is an efficient strategy to tune thermal transport via systematic investigation of the thermal conductance (G) across a series of large-area four-layer stacked vdW materials using an improved polyethylene glycol-assisted time-domain thermoreflectance method. Owing to its rich interfacial mismatch and weak interfacial coupling, the vertically stacked MoSe₂-MoS₂-MoSe₂-MoS₂ heterostructure demonstrates the lowest G of 1.5 MW m^-2 K^-1 among all vdW structures. A roadmap to tune G via homointerfacial mismatch, interfacial coupling, and heterointerfacial mismatch is further demonstrated for thermal tuning. Our work reveals the roles of various interfacial effects on heat flow and highlights the importance of the interfacial mismatch and coupling effects in thermal transport. The design principle is also promising for application in other areas, such as the electrical tuning of energy storage and conversion and the thermoelectricity tuning of thermoelectronics.

Room-Temperature Chiral Light-Emitting Diode Based on Strained Monolayer Semiconductors

Room-temperature chiral light sources whose optical helicity can be electrically switched are one of the most important devices for future optical quantum information processing. The emerging valley degree of freedom in monolayer semiconductors allows generation of chiral luminescence via valley polarization. However, relevant valley-polarized light-emitting diodes (LEDs) have only been achieved at low temperatures (typically below 80 K). Here, a room-temperature chiral LED with strained transition metal dichalcogenide monolayers is realized. Spatially resolved polarization spectroscopy reveals that strain effects are crucial to yielding robust valley-polarized electroluminescence. The broken threefold rotational symmetry of strained monolayers induce inequivalent valley drifts at the K/K' valleys, resulting in different amounts of spin recombination driven by electric fields. Based on this scenario, ideally strained conditions are designed for LEDs on flexible substrates, in which the helicity of room-temperature valley-polarized electroluminescence is electrically tuned. The results provide a new pathway for practical chiral light sources based on monolayer semiconductors.

Spatial Control of Dynamic p-i-n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices

Emerging transition metal dichalcogenides (TMDCs) offer an attractive platform for investigating functional light-emitting devices, such as flexible devices, quantum and chiral devices, high-performance optical modulators, and ultralow threshold lasers. In these devices, the key operation is to control the light-emitting position, that is, the spatial position of the recombination zone to generate electroluminescence, which permits precise light guides/passes/confinement to ensure favorable device performance. Although various structures of TMDC light-emitting devices have been demonstrated, including the transistor configuration and heterostructured diodes, it is still difficult to tune the light-emitting position precisely owing to the structural device complexity. In this study, we fabricated two-terminal light-emitting devices with chemically synthesized WSe₂, MoSe₂, and WS₂ monolayers, and performed direct observations of their electroluminescence, from which we discovered a divergence in their light-emitting positions. Subsequently, we propose a method to associate spatial electroluminescence imaging with transport properties among different samples; consequently, a common rule for determining the locations of recombination zones is revealed. Owing to dynamic carrier accumulations and p-i-n junction formations, the light-emitting positions in electrolyte-based devices can be tuned continuously. The proposed method will expand the device applicability for designing functional optoelectronic applications based on TMDCs.

Air-stable and efficient electron doping of monolayer MoS2 by salt-crown ether treatment

To maximize the potential of transition-metal dichalcogenides (TMDCs) in device applications, the development of a sophisticated technique for stable and highly efficient carrier doping is critical. Here, we report the efficient n-type doping of monolayer MoS2 using KOH/benzo-18-crown-6, resulting in a doped TMDC that is air-stable. MoS2 field-effect transistors show an increase in on-current of three orders of magnitude and degenerate the n-type behaviour with high air-stability for ∼1 month as the dopant concentration increases. Transport measurements indicate a high electron density of 3.4 × 1013 cm-2 and metallic-type temperature dependence for highly doped MoS2. First-principles calculations support electron doping via surface charge transfer from the K/benzo-18-crown-6 complex to monolayer MoS2. Patterned doping is demonstrated to improve the contact resistance in MoS2-based devices.

Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires

The development of bulk synthetic processes to prepare functional nanomaterials is crucial to achieve progress in fundamental and applied science. Transition-metal chalcogenide (TMC) nanowires, which are one-dimensional (1D) structures having three-atom diameters and van der Waals surfaces, have been reported to possess a 1D metallic nature with great potential in electronics and energy devices. However, their mass production remains challenging. Here, a wafer-scale synthesis of highly crystalline transition-metal telluride nanowires is demonstrated by chemical vapor deposition. The present technique enables formation of either aligned, atomically thin two-dimensional (2D) sheets or random networks of three-dimensional (3D) bundles, both composed of individual nanowires. These nanowires exhibit an anisotropic 1D optical response and superior conducting properties. The findings not only shed light on the controlled and large-scale synthesis of conductive thin films but also provide a platform for the study on physics and device applications of nanowire-based 2D and 3D crystals.

Efficient growth and characterization of one-dimensional transition metal tellurides inside carbon nanotubes

Atomically thin one-dimensional (1D) van der Waals wires of transition metal monochalocogenides (TMMs) have been anticipated as promising building blocks for integrated nanoelectronics. While reliable production of TMM nanowires has eluded scientists over the past few decades, we finally demonstrated a bottom-up fabrication of MoTe nanowires inside carbon nanotubes (CNTs). Still, the current synthesis method is based on vacuum annealing of reactive MoTe₂, and limits access to a variety of TMMs. Here we report an expanded framework for high-yield synthesis of the 1D tellurides including WTe, an previously unknown family of TMMs. Experimental and theoretical analyses revealed that the choice of suitable metal oxides as a precursor provides a useful yield for their characterization. These TMM nanowires exhibit a significant optical absorption in the visible-light region. More important, electronic properties of CNTs can be tuned by encapsulating different TMM nanowires.

Control of High-Harmonic Generation by Tuning the Electronic Structure and Carrier Injection

High-harmonic generation (HHG), which is the generation of light with multiple optical harmonics, is an unconventional nonlinear optical phenomenon beyond the perturbation regime. HHG, which was initially observed in gaseous media, has recently been demonstrated in solid-state materials. Determining how to control such extreme nonlinear optical phenomena is a challenging subject. Here, we demonstrate the control of HHG through tuning the electronic structure and carrier injection using single-walled carbon nanotubes (SWCNTs). We reveal systematic changes in the high-harmonic spectra of SWCNTs with a series of electronic structures ranging from a metal structure to a semiconductor structure. We demonstrate enhancement or reduction of harmonic generation by more than 1 order of magnitude by tuning the electron and hole injection into the semiconductor SWCNTs through electrolyte gating. These results open a path toward the control of HHG in the context of field-effect transistor devices.

On/Off Boundary of Photocatalytic Activity between Single- and Bilayer MoS2

Molecularly thin two-dimensional (2D) semiconductors are emerging as photocatalysts owing to their layer-number-dependent quantum effects and high charge separation efficiency. However, the correlation among the dimensionality, crystallinity, and photocatalytic activity of such 2D nanomaterials remains unclear. Herein, a Ag photoreduction technique coupled with microscopic analyses is employed to spatially resolve the photocatalytic activity of MoS₂ as a model catalyst. Interestingly, we find that only monolayer (1L)-MoS₂ is active for a Ag photoreduction reaction. The photocatalytic activity of 1L-MoS₂ is enhanced by a built-in electrical field originated from the MoS₂/SiO₂ interface, instead of by the specific surface structure and quantum electronic state of 1L-MoS₂. Furthermore, we observe photocatalytic active sites to be geometrically distributed on triangular 1L-MoS₂ crystals, wherein the Ag particles are preferentially deposited on the outermost zigzag edges and defective inner parts of the triangular grains. The degradation of photocatalytic activity and electron mobility with the formation of Mo(VI) species indicates that the species inhibit the in-plane diffusion of the photogenerated electrons to the reductive sites. The monolayer-selectivity, activation, and inactivation mechanisms, unveiled in this work, will offer future directions in designing 2D nanophotocatalysts.

One-dimensional van der Waals heterostructures

We present the experimental synthesis of one-dimensional (1D) van der Waals heterostructures, a class of materials where different atomic layers are coaxially stacked. We demonstrate the growth of single-crystal layers of hexagonal boron nitride (BN) and molybdenum disulfide (MoS₂) crystals on single-walled carbon nanotubes (SWCNTs). For the latter, larger-diameter nanotubes that overcome strain effect were more readily synthesized. We also report a 5-nanometer-diameter heterostructure consisting of an inner SWCNT, a middle three-layer BN nanotube, and an outer MoS₂ nanotube. Electron diffraction verifies that all shells in the heterostructures are single crystals. This work suggests that all of the materials in the current 2D library could be rolled into their 1D counterparts and a plethora of function-designable 1D heterostructures could be realized.

High-Resolution Electrochemical Mapping of the Hydrogen Evolution Reaction on Transition-Metal Dichalcogenide Nanosheets

High-resolution scanning electrochemical cell microscopy (SECCM) is used to image and quantitatively analyze the hydrogen evolution reaction (HER) catalytically active sites of 1H-MoS₂ nanosheets, MoS₂ , and WS₂ heteronanosheets. Using a 20 nm radius nanopipette and hopping mode scanning, the resolution of SECCM was beyond the optical microscopy limit and visualized a small triangular MoS₂ nanosheet with a side length of ca. 130 nm. The electrochemical cell provides local cyclic voltammograms with a nanoscale spatial resolution for visualizing HER active sites as electrochemical images. The HER activity difference of edge, terrace, and heterojunction of MoS₂ and WS₂ were revealed. The SECCM imaging directly visualized the relationship of HER activity and number of MoS₂ nanosheet layers and unveiled the heterogeneous aging state of MoS₂ nanosheets. SECCM can be used for improving local HER activities by producing sulfur vacancies using electrochemical reaction at the selected region.

Gas-Source CVD Growth of Atomic Layered WS2 from WF6 and H2S Precursors with High Grain Size Uniformity

Two-dimensional (2D) transition-metal dichalcogenides have attracted a considerable amount of attention because of their potential for post-silicon device applications, as well as for exploring fundamental physics in an ideal 2D system. We tested the chemical vapour deposition (CVD) of WS₂ using the gaseous precursors WF₆ and H₂S, augmented by the Na-assistance method. When Na was present during growth, the process created triangle-shaped WS₂ crystals that were 10 μm in size and exhibited semiconducting characteristics. By contrast, the Na-free growth of WS₂ resulted in a continuous film with metallic behaviour. These results clearly demonstrate that alkali-metal assistance is valid even in applications of gas-source CVD without oxygen-containing species, where intermediates comprising Na, W, and S can play an important role. We observed that the WS₂ crystals grown by gas-source CVD exhibited a narrow size distribution when compared with crystals grown by conventional solid-source CVD, indicating that the crystal nucleation occurred almost simultaneously across the substrate, and that uniform lateral growth was dominant afterwards. This phenomenon was attributed to the suppression of inhomogeneous nucleation through the fast and uniform diffusion of the gas-phase precursors, supported by the Na-assisted suppression of the fast reactions between WF₆ and H₂S.

Monolayer MoS2 growth at the Au-SiO2 interface

Atomically thin transition-metal dichalcogenides (TMDs) are attracting great interest for future electronic applications. Even though much effort has been devoted to preparing large-area, high-quality TMDs over the past few years, the samples are usually grown on substrate surfaces. Here, we demonstrate the direct growth of a MoS₂ monolayer at the interface between a Au film and a SiO₂ substrate. MoS₂ grains were nucleated below Au films deposited on SiO₂via interface diffusion and then grown into a continuous MoS₂ film. By programming the Au pattern deposited, controlled growth of MoS₂ with the desired size and geometry was achieved over preferred locations, facilitating its integration into functional field-effect transistors. Our findings elucidate the fabrication of a two-dimensional semiconductor at the interface of bulk three-dimensional solids, providing a novel means for establishing a clean interface junction. It also offers a promising alternative to the site-selective synthesis of TMDs, which is expected to aid the fabrication of TMD-based nanodevices.

Tunable Chemical Coupling in Two-Dimensional van der Waals Electrostatic Heterostructures

Heterostructures of two-dimensional (2D) atomic crystals provide fascinating molecular-scale design elements for emergent physical phenomena and functional materials, as integrating distinct monolayers into vertical heterostructures can afford coupling between disparate properties. However, the available examples have been limited to either van der Waals (vdW) or electrostatic (ES) heterostructures that are solely composed of noncharged and charged monolayers, respectively. Here, we propose a "vdW-ES heterostructure" chemical design in which charge-neutral and charged monolayer-building blocks with highly disparate chemical and physical properties are conjugated vertically through asymmetrically charged interfaces. We demonstrate vdW-ES heteroassembly of semiconducting MoS₂ and dielectric Ca₂Nb₃O₁₀^- (CNO) monolayers using an amphipathic molecular starch, resulting in the emergence of trion luminescence observed at the lowest energy among MoS₂-related materials, probably due to interfacial confinement effects given by vdW-ES dual interactions. In addition, interface engineering leads to tailored exciton of the vdW/ES heterostructures owing to the pronounced dielectric proximity effects, bringing an intriguing interlayer chemistry to modify 2D materials. Furthermore, the current approach was successfully extended to create a graphene/CNO heterostructure, which verifies the versatility of the preparative method.

Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics

Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post-silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom-thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p- and n-type semiconductors is essential for various device applications, such as complementary metal-oxide-semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe₂ is demonstrated by chemical doping. Two different molecules, 4-nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe₂ field-effect transistors (FETs) to p- and n-type, respectively. Moreover, the chemically doped WSe₂ show increased effective carrier mobilities of 82 and 25 cm² V^-1 s^-1 for holes and electrons, respectively, which are much higher than those of the pristine WSe₂ . The doping effects are studied by photoluminescence, Raman, X-ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe₂ FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (≈0.17 nW). Furthermore, a p-n junction within single WSe₂ grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe₂ will contribute to the development of TMDC-based advanced electronics.

Exciton Polarization and Renormalization Effect for Optical Modulation in Monolayer Semiconductors

The ideal quantum confinement structure of monolayer semiconductors offers prominent optical modulation capabilities that are mediated by enhanced many-body interactions. Herein, we establish an electrolyte-gating method for tuning the luminescence properties that are in transition metal dichalcogenide (TMDC) monolayers. We fabricate electric double-layer capacitors on TMDC/graphite heterostructures to investigate electric-field- and carrier-density-dependent photoluminescence. The exciton peak energy initially shows a slight quadratic red shift of ∼1 meV without carrier accumulations, which is caused by the quantum-confined Stark effect. In contrast, the exciton resonance exhibits a larger red shift up to 10 meV with the accumulated carrier density above 10¹³ cm^-2. These results indicate that the optical transitions can be largely modulated by the carrier density control in S- and Se-based TMDCs, as triggered by the doping-induced band gap renormalization effect. To further inspire this modulation capability, we also apply our method to electrolyte-based TMDC light-emitting devices. Biasing solely in electrolyte-induced p-i-n junctions yields pronounced red shifts up to 40 meV for exciton and trion electroluminescence. Consequently, our approach reveals that the doping effects in the high-carrier-density regimes are potentially significant for efficient optical modulation in monolayer semiconductors.

Interband resonant high-harmonic generation by valley polarized electron-hole pairs

High-harmonic generation in solids is a unique tool to investigate the electron dynamics in strong light fields. The systematic study in monolayer materials is required to deepen the insight into the fundamental mechanism of high-harmonic generation. Here we demonstrated nonperturbative high harmonics up to 18th order in monolayer transition metal dichalcogenides. We found the enhancement in the even-order high harmonics which is attributed to the resonance to the band nesting energy. The symmetry analysis shows that the valley polarization and anisotropic band structure lead to polarization of the high-harmonic radiation. The calculation based on the three-step model in solids revealed that the electron-hole polarization driven to the band nesting region should contribute to the high harmonic radiation, where the electrons and holes generated at neighboring lattice sites are taken into account. Our findings open the way for attosecond science with monolayer materials having widely tunable electronic structures.