The development of sensitive graphene-based surface acoustic wave sensors for NO2 detection at room temperature

Bilayer graphene (Bl-Gr) and sulphur-doped graphene (S-Gr) have been integrated with LiTaO3 surface acustic wave (SAW) sensors to enhance the performance of NO2 detection at room temperature. The sensitivity of the Bl-Gr SAW sensors toward NO2, measured at room temperature, was 0.29º/ppm, with a limit of detection of 0.068 ppm. The S-Gr SAW sensors showed 0.19º/ppm sensitivity and a limit of detection of 0.140 ppm. The origin of these high sensitivities was attributed to the mass loading and elastic effects of the graphene-based sensing materials, with surface changes caused by the absorption of the NO2 molecules on the sensing films. Although there are no significant differences regarding the sensitivity and detection limit of the two types of sensors, the measurements in the presence of interferent gases and various humidity conditions outlined much better selectivity and sensing performances towards NO2 gas for the Bl-Gr SAW sensors.

Gate-Defined Electron Interferometer in Bilayer Graphene

We present an electron interferometer defined purely by electrostatic gating in an encapsulated bilayer graphene. This minimizes possible sample degradation introduced by conventional etching methods when preparing quantum devices. The device quality is demonstrated by observing Aharonov-Bohm (AB) oscillations with a period of h/e, h/2e, h/3e, and h/4e, witnessing a coherence length of many microns. The AB oscillations as well as the type of carriers (electrons or holes) are seamlessly tunable with gating. The coherence length longer than the ring perimeter and semiclassical trajectory of the carrier are established from the analysis of the temperature and magnetic field dependence of the oscillations. Our gate-defined ring geometry has the potential to evolve into a platform for exploring correlated quantum states such as superconductivity in interferometers in twisted bilayer graphene.

Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots

Experimental realizations of graphene-based stadium-shaped quantum dots (QDs) have been few and have been incompatible with scanned probe microscopy. Yet, the direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states.

Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene

Graphite crystals used to prepare graphene-based heterostructures are generally assumed to be defect free. We report here scanning tunneling microscopy results that show graphite commonly used to prepare graphene devices can contain a significant amount of native defects. Extensive scanning of the surface allows us to determine the concentration of native defects to be 6.6 × 10⁸ cm^-2. We further study the effects of these native defects on the electronic properties of Bernal-stacked bilayer graphene. We observe gate-dependent intravalley scattering and successfully compare our experimental results to T-matrix-based calculations, revealing a clear carrier density dependence in the distribution of the scattering vectors. We also present a technique for evaluating the spatial distribution of short-scale scattering. Finally, we present a theoretical analysis based on the Boltzmann transport equation that predicts that the dilute native defects identified in our study are an important extrinsic source of scattering, ultimately setting the charge carrier mobility at low temperatures.

Symmetry of diffraction patterns of two-dimensional crystal structures

Conventionally, theoretical considerations in electron microscopy employ the weak phase approximation (WPA), which is only valid for weak scattering atomic elements (C, B, N) but not for transition metal dichalcogenide (TMD) materials. This leads to many exciting phenomena being overlooked. The present theoretical study goes beyond the weak phase approximation and thus the obtained results can be applied for two-dimensional (2D) crystals made of weakly as well of strongly scattering atoms, including the TMD materials. We show that the symmetry of an electron diffraction pattern, characterized by the Friedel's pairs, is governed by the symmetry of the exit wave distribution. For an infinite periodic crystal, the exit wave is an infinite and periodic 2D distribution which can be assigned an exit wave unit cell. The latter is determined by both the chemical composition of the crystallographic unit cell and the distance between the atomic layers. For 2D crystals of identical atoms, such as graphene, the exit wave unit cell is symmetrical and, thus, a symmetrical diffraction pattern is expected. For TMD materials, the exit wave unit cell is not symmetrical and a non-symmetrical diffraction pattern is expected for both monolayer and bilayer. Conventionally asymmetry in diffraction patterns has been explained by presence of dynamical (multiple) scattering effects. Our study shows that the asymmetry of a diffraction pattern can be explained solely by the asymmetry of the exit wave unit cell. The exit wave unit cell can be asymmetrical even in kinematic (single) scattering model. Therefore, conclusions about dynamical (multiple) scattering effects in 2D materials cannot be made based solely on asymmetry of a diffraction pattern. We also show that for hexagonally arranged atoms the second-order diffraction peaks show perfectly symmetrical intensities independently on the symmetry of the exit wave unit cell distribution.

Evidence of Lifshitz Transition in the Thermoelectric Power of Ultrahigh-Mobility Bilayer Graphene

Resolving low-energy features in the density of states (DOS) holds the key to understanding a wide variety of rich novel phenomena in graphene-based 2D heterostructures. The Lifshitz transition in bilayer graphene (BLG) arising from trigonal warping has been established theoretically and experimentally. Nevertheless, the experimental realization of its effects on transport properties has been challenging because of its relatively low energy scale (∼1 meV). In this work, we demonstrate that the thermoelectric power (TEP) can be used as an effective probe to investigate fine changes in the DOS of BLG. We observed additional entropy features in the vicinity of the charge neutrality point (CNP) in gapped BLG. This apparent violation of the Mott formula can be explained quantitatively by considering the effects of trigonal warping, thereby serving as possible evidence of a Lifshitz transition.

Soliton-Dependent Electronic Transport across Bilayer Graphene Domain Wall

Layer-stacking domain wall in bilayer graphene is one type of topological defects that can greatly affect the electronic properties of bilayer graphene and therefore lead to nontrivial transport behaviors. An outstanding question on the layer stacking domain wall is how the electrons hop between two adjacent stacking domains. Here we report the first experimental observation of electronic transport across bilayer graphene domain walls by combining near-field infrared nanoscopy and scanning voltage microscopy techniques. We observe markedly different electron transport behaviors across the tensile- and shear-type domain walls. The tensile-type domain wall is highly reflective of low-energy incident electrons, but becomes more transparent when the electron density and the Fermi energy are increased by electrostatic gating. In contrast, the shear-type domain wall is always highly transparent at different gate voltages. Such soliton-dependent electronic transport can open up new routes to engineer novel nanoelectronic devices based on layer-stacking domain walls in bilayer graphene.

Charge Detection in Gate-Defined Bilayer Graphene Quantum Dots

We report on charge detection in electrostatically defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high-quality quantum dots. The charge detector is based on a second quantum dot separated from the first dot by depletion underneath a 150 nm wide gate. We show that Coulomb resonances in the sensing dot are sensitive to individual charging events on the nearby quantum dot. The potential change due to single electron charging causes a steplike change (up to 77%) in the current through the charge detector. Furthermore, the charging states of a quantum dot with tunable tunneling barriers and of coupled quantum dots can be detected.

Doped Twisted Bilayer Graphene near Magic Angles: Proximity to Wigner Crystallization, Not Mott Insulation

We devise a model to explain why twisted bilayer graphene exhibits insulating behavior when ν = 2 or 3 charges occupy a unit moiré cell, a feature attributed to Mottness per previous work but not for ν = 1, clearly inconsistent with Mott insulation. We compute r_s = E_U/ E_K, where E_U and E_K are the potential and kinetic energies, respectively, and show that (i) the Mott criterion lies at a density larger than experimental values by a factor of 10⁴ and (ii) a transition to a series of Wigner crystalline states exists as a function of ν. We find that, for ν = 1, r_s fails to cross the threshold ( r_s = 37) for the triangular lattice, and metallic transport ensues. However, for ν = 2 and ν = 3, the thresholds r_s = 22 and r_s = 17, respectively, are satisfied for a transition to Wigner crystals (WCs) with a honeycomb (ν = 2) and a kagome (ν = 3) structure. We posit that such crystalline states form the correct starting point for analyzing superconductivity.

Edge-Limited Valley-Preserved Transport in Quasi-1D Constriction of Bilayer Graphene

We investigated the quantization of the conductance of quasi-one-dimensional (quasi-1D) constrictions in high-mobility bilayer graphene (BLG) with different geometrical aspect ratios. Ultrashort (a few tens of nanometers long) constrictions were fabricated by applying an under-cut etching technique. Conductance was quantized in steps of ∼4 e²/ h (∼2 e²/ h) in devices with aspect ratios smaller (larger) than 1. We argue that scattering at the edges of a quasi-1D BLG constriction limits the intervalley scattering length, which causes valley-preserved (valley-broken) quantum transport in devices with aspect ratios smaller (larger) than 1. The subband energy levels, analyzed in terms of the bias-voltage and temperature dependences of the quantized conductance, indicated that they corresponded well to the effective channel width of a physically defined conducting channel with a hard-wall confining potential. Our study in ultrashort high-mobility BLG nano constrictions with physically tailored edges clearly confirms that physical edges are the major source of intervalley scattering in graphene in the ballistic limit.

Gate-Defined Electron-Hole Double Dots in Bilayer Graphene

We present gate-controlled single-, double-, and triple-dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal boron nitride and the use of graphite gates, it has become possible to electrostatically confine carriers in bilayer graphene and to completely pinch-off current through quantum dot devices. Here, we discuss the operation and characterization of electron-hole double dots. We show a remarkable degree of control of our device, which allows the implementation of two different gate-defined electron-hole double-dot systems with very similar energy scales. In the single-dot regime, we extract excited state energies and investigate their evolution in a parallel magnetic field, which is in agreement with a Zeeman-spin-splitting expected for a g-factor of 2.

Coupled Quantum Dots in Bilayer Graphene

Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge, or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile and widely tunable multiquantum dot system. We demonstrate the formation of single, double and triple quantum dots that are free of any sign of disorder. In bilayer graphene, we have the possibility to form tunnel barriers using different mechanisms. We can exploit the ambipolar nature of bilayer graphene where pn-junctions form natural tunnel barriers. Alternatively, we can use gates to form tunnel barriers, where we can vary the tunnel coupling by more than 2 orders of magnitude tuning between a deeply Coulomb blockaded system and a Fabry-Pérot-like cavity. Demonstrating such tunability is an important step toward graphene-based quantum computation.

Observation of Anomalous Resistance Behavior in Bilayer Graphene

Our measurement results have shown that bilayer graphene exhibits an unexpected sharp transition of the resistance value in the temperature region 200~250 K. We argue that this behavior originates from the interlayer ripple scattering effect between the top and bottom ripple graphene layer. The inter-scattering can mimic the Coulomb scattering but is strongly dependent on temperature. The observed behavior is consistent with the theoretical prediction that charged impurities are the dominant scatters in bilayer graphene. The resistance increase with increasing perpendicular magnetic field strongly supports the postulate that magnetic field induces an excitonic gap in bilayer graphene. Our results reveal that the relative change of resistance induced by magnetic field in the bilayer graphene shows an anomalous thermally activated property.

On-Demand Spin-Orbit Interaction from Which-Layer Tunability in Bilayer Graphene

Spin-orbit interaction (SOI) that is gate-tunable over a broad range is essential to exploiting novel spin phenomena. Achieving this regime has remained elusive because of the weakness of the underlying relativistic coupling and lack of its tunability in solids. Here we outline a general strategy that enables exceptionally high tunability of SOI through creating a which-layer spin-orbit field inhomogeneity in graphene multilayers. An external transverse electric field is applied to shift carriers between the layers with strong and weak SOI. Because graphene layers are separated by subnanometer scales, exceptionally high tunability of SOI can be achieved through a minute carrier displacement. A detailed analysis of the experimentally relevant case of bilayer graphene on a semiconducting transition metal dichalchogenide substrate is presented. In this system, a complete tunability of SOI amounting to its ON/OFF switching can be achieved. New opportunities for spin control are exemplified with electrically driven spin resonance and topological phases with different quantized intrinsic valley Hall conductivities.

Microwave Photodetection in an Ultraclean Suspended Bilayer Graphene p-n Junction

We explore the potential of bilayer graphene as a cryogenic microwave photodetector by studying the microwave absorption in fully suspended clean bilayer graphene p-n junctions in the frequency range of 1-5 GHz at a temperature of 8 K. We observe a distinct photocurrent signal if the device is gated into the p-n regime, while there is almost no signal for unipolar doping in either the n-n or p-p regimes. Most surprisingly, the photocurrent strongly peaks when one side of the junction is gated to the Dirac point (charge-neutrality point CNP), while the other remains in a highly doped state. This is different to previous results where optical radiation was used. We propose a new mechanism based on the phototermal effect explaining the large signal. It requires contact doping and a distinctly different transport mechanism on both sides: one side of graphene is ballistic and the other diffusive. By engineering partially diffusive and partially ballistic devices, the photocurrent can drastically be enhanced.

Stranski-Krastanov and Volmer-Weber CVD Growth Regimes To Control the Stacking Order in Bilayer Graphene

Aside from unusual properties of monolayer graphene, bilayer has been shown to have even more interesting physics, in particular allowing bandgap opening with dual gating for proper interlayer symmetry. Such properties, promising for device applications, ignited significant interest in understanding and controlling the growth of bilayer graphene. Here we systematically investigate a broad set of flow rates and relative gas ratio of CH₄ to H₂ in atmospheric pressure chemical vapor deposition of multilayered graphene. Two very different growth windows are identified. For relatively high CH₄ to H₂ ratios, graphene growth is relatively rapid with an initial first full layer forming in seconds upon which new graphene flakes nucleate then grow on top of the first layer. The stacking of these flakes versus the initial graphene layer is mostly turbostratic. This growth mode can be likened to Stranski-Krastanov growth. With relatively low CH₄ to H₂ ratios, growth rates are reduced due to a lower carbon supply rate. In addition bi-, tri-, and few-layer flakes form directly over the Cu substrate as individual islands. Etching studies show that in this growth mode subsequent layers form beneath the first layer presumably through carbon radical intercalation. This growth mode is similar to that found with Volmer-Weber growth and was shown to produce highly oriented AB-stacked materials. These systematic studies provide new insight into bilayer graphene formation and define the synthetic range where gapped bilayer graphene can be reliably produced.

Fractional Quantum Hall States in Bilayer Graphene Probed by Transconductance Fluctuations

We have investigated fractional quantum Hall (QH) states in Bernal-stacked bilayer graphene using transconductance fluctuation measurements. A variety of odd-denominator fractional QH states with νQH → νQH + 2 symmetry, as previously reported, are observed. However, surprising is that also particle-hole symmetric states are clearly resolved in the same measurement set. We attribute their emergence to the reversal of orbital states in the octet level scheme induced by a strong local charge imbalance, which can be captured by the transconductance fluctuations. Also the even-denominator fractional QH state at filling -1/2 is observed. However, contrary to a previous study on a suspended graphene layer [ Ki et al. Nano Lett. 2014, 14 , 2135 ], the particle-hole symmetric state at filling 1/2 is detected as well. These observations suggest that the stability of both odd and even denominator fractional QH states is very sensitive to local transverse electric fields in bilayer graphene.

Gate-tunable resonant tunneling in double bilayer graphene heterostructures

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.