Doping monolayer graphene with single atom substitutions

Spin-dependent carrier mobility and its gate-voltage modifying effects for functionalized single walled black phosphorus tubes

Phosphorene and its derivatives so far have attracted substantial research interest due to its promising properties for developing nanoscale electronic devices. Here, we present a theoretical investigation on the functionalized features, such as the improved electronic structure and carrier mobility, for armchair-edged single walled black phosphorus nanotubes (PNTs) with the substitutional doping of low-concentration transition-metal atoms (Ti, Mn, Fe, and Ni). They are predicted to be exceptional magnetic semiconductors (MSCs), such as half-semiconductor or bipolar MSC. Their spin-resolved carrier mobility at room temperature holds doping element- dependence as well as carrier and spin polarity. Particularly, the difference by two orders of magnitude for carrier mobility emerges due to different TM doping. More interestingly, the carrier mobility in armchair PNTs serving as the channel material of a spin field effect transistor is predicted to be modified strongly by a gate voltage. The enhanced carrier mobility and its gate voltage direction-dependent behavior, as well as the more obvious carrier and spin polarity of mobility, can be observed clearly under gate voltage, which further facilitates the separation of different carriers and spin states and also suggests that realistic carrier mobility is gate voltage-dependent in a field effect transistor.

Recent Progress in Graphene-Based Noble-Metal Nanocomposites for Electrocatalytic Applications

The fast industrialization process has led to global challenges in the energy crisis and environmental pollution, which might be solved with clean and renewable energy. Highly efficient electrochemical systems for clean-energy collection require high-performance electrocatalysts, including Au, Pt, Pd, Ru, etc. Graphene, a single-layer 2D carbon nanosheet, possesses many intriguing properties, and has attracted tremendous research attention. Specifically, graphene and graphene derivatives have been utilized as templates for the synthesis of various noble-metal nanocomposites, showing excellent performance in electrocatalytic-energy-conversion applications, such as the hydrogen evolution reaction and CO₂ reduction. Herein, the recent progress in graphene-based noble-metal nanocomposites is summarized, focusing on their synthetic methods and electrocatalytic applications. Furthermore, some personal insights on the challenges and possible future work in this research field are proposed.

Graphene-Based Ammonia Sensors Functionalised with Sub-Monolayer V₂O₅: A Comparative Study of Chemical Vapour Deposited and Epitaxial Graphene †

Graphene in its pristine form has demonstrated a gas detection ability in an inert carrier gas. For practical use in ambient atmosphere, its sensor properties should be enhanced with functionalisation by defects and dopants, or by decoration with nanophases of metals or/and metal oxides. Excellent sensor behaviour was found for two types of single layer graphenes: grown by chemical vapour deposition (CVD) and transferred onto oxidized silicon (Si/SiO₂/CVDG), and the epitaxial graphene grown on SiC (SiC/EG). Both graphene samples were functionalised using a pulsed laser deposited (PLD) thin V₂O₅ layer of average thickness ≈ 0.6 nm. According to the Raman spectra, the SiC/EG has a remarkable resistance against structural damage under the laser deposition conditions. By contrast, the PLD process readily induces defects in CVD graphene. Both sensors showed remarkable and selective sensing of NH₃ gas in terms of response amplitude and speed, as well as recovery rate. SiC/EG showed a response that was an order of magnitude larger as compared to similarly functionalised CVDG sensor (295% vs. 31% for 100 ppm NH₃). The adsorption site properties are assigned to deposited V₂O₅ nanophase, being similar for both sensors, rather than (defect) graphene itself. The substantially larger response of SiC/EG sensor is probably the result of the smaller initial free charge carrier doping in EG.

Tiny nano-scale junction built on B/N doped single carbon nanotube

The characteristic sizes of carbon nanotube (CNT)-based devices are constantly being reduced. However, this continuing miniaturization is still facing many problems and requires innovative ideas and structures. By regular doping of boron and nitrogen atoms in a semiconducting single-wall carbon nanotube (SWCNT), we have constructed a nano-scale junction with rectifying characteristics. The I-V curve of our junction resembles the I-V curve of an ideal diode with a p-n junction. This junction channel is about 0.6 nm wide and 3.4 nm long, and the footprint is 5.1 nm long. Under a 0.5 V bias, the junction has a leakage current of -8.8 × 10^-3 μA, a rectifying ratio I_on/I_off of 0.716 × 10³, and a current density of 10.52 mA μm^-1. Our study also shows how different dopant distributions influence the I-V curve. Such a regular nano-scale doping method is effective and important, compared with the traditional random doping method.

Nanoparticles and Single Atoms in Commercial Carbon-Supported Platinum-Group Metal Catalysts

Nanoparticles of platinum-group metals (PGM) on carbon supports are widely used as catalysts for a number of chemical and electrochemical conversions on laboratory and industrial scale. The newly emerging field of single-atom catalysis focuses on the ultimate level of metal dispersion, i.e. atomically dispersed metal species anchored on the substrate surface. However, the presence of single atoms in traditional nanoparticle-based catalysts remains largely overlooked. In this work, we use aberration-corrected scanning transmission electron microscope to investigate four commercially available nanoparticle-based PGM/C catalysts (PGM = Ru, Rh, Pd, Pt). Annular dark-field (ADF) images at high magnifications reveal that in addition to nanoparticles, single atoms are also present on the surface of carbon substrates. Scanning electron microscopy, X-ray diffraction and size distribution analysis show that the materials vary in nanoparticle size and type of carbon support. These observations raise questions about the possible ubiquitous presence of single atoms in conventional nanoparticle PGM/C catalysts and the role they may play in their synthesis, activity, and stability. We critically discuss the observations with regard to the quickly developing field of single atom catalysis.

Metal doped armchair graphene nanoribbons: electronic structure, carrier mobility and device properties

Functionalizing graphene to develop on-demand nanodevices is highly desirable, but still remains challenging. Here, we theoretically propose the functionalization of armchair graphene nanoribbons by low-concentration metal (M) atom (M = Ti, Ni, Sn, or Hg) doping and investigate the structural stability and electronic behaviors of these doped systems in depth. The calculated binding energy and formation energy as well as the molecular dynamics simulation show that the geometries of these hybridized ribbons are rather stable. With metal doping, the ribbons present rich and flexibly tunable bandgaps, depending on the metal atom and doping position, which can be attributed to newly emerged hybridized subbands near the Fermi level and the entire energy band structure shifting upward due to the increased electron number in the ribbon donated from the dopant. These bandgaps can also be further tuned substantially by the stress. And the carrier mobility is calculated based on the deformation potential theory, which shows that the different metal doping can effectively control the carrier mobility, and a large carrier polarity can also be clearly observed. Furthermore, the metal doping can significantly enhance the device properties of the ribbon as compared with those of the pristine ribbon, such as creating a large negative differential resistance phenomenon. These studies demonstrate that these doping systems might hold promising applications in nano-electronics.

Single-atom Pt on non-metal modified graphene sheets as efficient catalysts for CO oxidation

By the density functional theory (DFT) calculations, the formation geometries, electronic structures and catalytic properties of metal Pt and nonmetal (NM) atom-co-modified graphene (Pt–3NM–graphene, NM = N, Si, P) as reactive substrates were investigated.

Effect of Stone–Wales defects and transition-metal dopants on arsenene: a DFT study

The structural, electronic, and magnetic properties of 3d transition metal (TM) atom (Sc, V, Cr, Mn, Co, and Cu) doped Stone–Wales (SW) defect arsenene were systematically investigated by density functional theory (DFT). The results indicated that the properties of arsenene were effectively changed by the SW-defect and TM-doping. Furthermore, chemical bonds formed between the TM-dopants and the adjacent As atoms of the SW-defect. The dopants Sc, Mn, and Cu induced an indirect-to-direct bandgap transition, and the doping of V, Cr, and Mn in SW-defect arsenene exhibited magnetic states. The magnetic moments of the systems depended on the number of spin-localized valence electrons. The functionalized electronic and magnetic properties of arsenene highlight the applications for electronics, optoelectronics, and spintronics.

The structural, electronic, and magnetic properties of 3d transition metal (TM) atom (Sc, V, Cr, Mn, Co, and Cu) doped Stone–Wales (SW) defect arsenene were systematically investigated by density functional theory (DFT).

Single atom electrocatalysts supported on graphene or graphene-like carbons

The synthetic strategies, structural identification and electrocatalytic applications of single atom catalysts supported on graphene or graphene-like carbons are reviewed.

Catalysis with Two-Dimensional Materials Confining Single Atoms: Concept, Design, and Applications

Two-dimensional materials and single-atom catalysts are two frontier research fields in catalysis. A new category of catalysts with the integration of both aspects has been rapidly developed in recent years, and significant advantages were established to make it an independent research field. In this Review, we will focus on the concept of two-dimensional materials confining single atoms for catalysis. The new electronic states via the integration lead to their mutual benefits in activity, that is, two-dimensional materials with unique geometric and electronic structures can modulate the catalytic performance of the confined single atoms, and in other cases the confined single atoms can in turn affect the intrinsic activity of two-dimensional materials. Three typical two-dimensional materials are mainly involved here, i.e., graphene, g-C₃N₄, and MoS₂, and the confined single atoms include both metal and nonmetal atoms. First, we systematically introduce and discuss the classic synthesis methods, advanced characterization techniques, and various catalytic applications toward two-dimensional materials confining single-atom catalysts. Finally, the opportunities and challenges in this emerging field are featured on the basis of its current development.

Carbon-Supported Single Atom Catalysts for Electrochemical Energy Conversion and Storage

Single atoms of select transition metals supported on carbon substrates have emerged as a unique system for electrocatalysis because of maximal atom utilization (≈100%) and high efficiency for a range of reactions involved in electrochemical energy conversion and storage, such as the oxygen reduction, oxygen evolution, hydrogen evolution, and CO₂ reduction reactions. Herein, the leading strategies for the preparation of single atom catalysts are summarized, and the electrocatalytic performance of the resulting samples for the various reactions is discussed. In general, the carbon substrate not only provides a stabilizing matrix for the metal atoms, but also impacts the electronic density of the metal atoms due to strong interfacial interactions, which may lead to the formation of additional active sites by the adjacent carbon atoms and hence enhanced electrocatalytic activity. This necessitates a detailed understanding of the material structures at the atomic level, a critical step in the construction of a relevant structural model for theoretical simulations and calculations. Finally, a perspective is included highlighting the promises and challenges for the future development of carbon-supported single atom catalysts in electrocatalysis.

Defects on carbons for electrocatalytic oxygen reduction

The exploration of highly active and durable cathodic oxygen reduction reaction (ORR) catalysts with economical production costs is still the bottleneck to realize the large-scale commercialization of fuel cells. In recent years, remarkable progress has been achieved in fabricating effective non-precious metal based ORR catalysts. In particular, modified carbon materials have aroused extensive research interest because of their excellent performance and low cost. In this review, we present an overview on recent advancements in developing defective carbon based materials for catalyzing the ORR. In particular, three general kinds of defective carbon electrocatalysts will be summarized. They are non-metal induced defective carbons (modified by heteroatoms), intrinsic defective carbons (defects created by a physical or chemical method), and atomic metal species induced/coordinated defective carbons (metal-macrocycle complexes with different coordination environments). The common configurations of various defective carbons will be discussed, with typical examples on recently developed both metal-free and precious/non-precious metal species coordinated carbons. Finally, the future research directions of the defective carbon materials are proposed. The newly established defect promoted catalysis mechanism will be beneficial for the design and fabrication of highly effective electrocatalysts for practical energy storage and conversion applications.

Supported Two-Dimensional Materials under Ion Irradiation: The Substrate Governs Defect Production

Focused ion beams perfectly suit for patterning two-dimensional (2D) materials, but the optimization of irradiation parameters requires full microscopic understanding of defect production mechanisms. In contrast to freestanding 2D systems, the details of damage creation in supported 2D materials are not fully understood, whereas the majority of experiments have been carried out for 2D targets deposited on substrates. Here, we suggest a universal and computationally efficient scheme to model the irradiation of supported 2D materials, which combines analytical potential molecular dynamics with Monte Carlo simulations and makes it possible to independently assess the contributions to the damage from backscattered ions and atoms sputtered from the substrate. Using the scheme, we study the defect production in graphene and MoS₂ sheets, which are the two most important and wide-spread 2D materials, deposited on a SiO₂ substrate. For helium and neon ions with a wide range of initial ion energies including those used in a commercial helium ion microscope (HIM), we demonstrate that depending on the ion energy and mass, the defect production in 2D systems can be dominated by backscattered ions and sputtered substrate atoms rather than by the direct ion impacts and that the amount of damage in 2D materials heavily depends on whether a substrate is present or not. We also study the factors which limit the spatial resolution of the patterning process. Our results, which agree well with the available experimental data, provide not only insights into defect production but also quantitative information, which can be used for the minimization of damage during imaging in HIM or optimization of the patterning process.

Microwave-Assisted Rapid Synthesis of Graphene-Supported Single Atomic Metals

Graphene-supported single atomic metals (G-SAMs) have recently attracted considerable research interest for their intriguing catalytic, electronic, and magnetic properties. The development of effective synthetic methodologies toward G-SAMs with monodispersed metal atoms is vital for exploring their fundamental properties and potential applications. A convenient, rapid, and general strategy to synthesize a series of monodispersed atomic transition metals (for example, Co, Ni, Cu) embedded in nitrogen-doped graphene by two-second microwave (MW) heating the mixture of amine-functionalized graphene oxide and metal salts is reported here. The MW heating is able to simultaneously induce the reduction of graphene oxide, the doping of nitrogen, and the incorporation of metal atoms into the graphene lattices in one simple step. The rapid MW process minimizes metal diffusion and aggregation to ensure exclusive single metal atom dispersion in graphene lattices. Electrochemical studies demonstrate that graphene-supported Co atoms can function as highly active electrocatalysts toward the hydrogen evolution reaction. This MW-assisted method provides a rapid and efficient avenue to supported metal atoms for wide ranges of applications.

Enhanced electronic and optical properties of three TMD heterobilayers

The physical and chemical properties of monolayers can be tuned by selective combinations so as to be useful for device applications. Here we present a density functional theory study on the structural, electronic and optical properties of three transition metal dichalcogenide (TMD) heterobilayers, ZrS2/HfS2, ZrSe2/HfSe2 and SnS2/SnSe2. These heterobilayers are predicted to be energetically and dynamically stable structures. The band structure calculation result shows that ZrS2/HfS2, ZrSe2/HfSe2 and SnS2/SnSe2 heterobilayers are semiconductors with indirect band gaps. The efficient charge carrier separation in ZrS2/HfS2 and ZrSe2/HfSe2 heterobilayers indicates that they can be employed in energy harvesting devices. Contrary to the previous report on the ZrS2/HfS2 heterobilayer, we found it to have an intrinsic type-II band alignment which is required in p-n junction diodes and tunnel field effect transistors, and the same behavior was observed in ZrSe2/HfSe2 and SnS2/SnSe2 for the first time. The ZrS2/HfS2 and ZrSe2/HfSe2 heterobilayers reveal enhanced optical absorption both in the ultraviolet and visible regions as compared to their respective monolayers, whereas the parallel and perpendicular part of the optical absorption of the SnS2/SnSe2 heterobilayer revealed an anisotropic behavior; the perpendicular part is largely improved in the higher energy region, and the parallel part of the optical absorption is improved in the ultraviolet region.

Inducing Kondo screening of vacancy magnetic moments in graphene with gating and local curvature

In normal metals the magnetic moment of impurity-spins disappears below a characteristic Kondo temperature which marks the formation of a cloud of conduction-band electrons that screen the local-moment. In contrast, moments embedded in insulators remain unscreened at all temperatures. What then is the fate of magnetic-moments in intermediate, pseudogap systems, such as graphene? Theory predicts that coupling to the conduction-band electrons will drive a quantum phase transition between a local-moment phase and a Kondo-screened phase. However, attempts to experimentally confirm this prediction and its intriguing consequences, such as electrostatically tunable magnetic-moments, have been elusive. Here we report the observation of Kondo-screening and the quantum phase-transition between screened and unscreened phases of vacancy magnetic moments in graphene. Using scanning tunneling spectroscopy and numerical renormalization-group calculations we show that this transition enables to control the screening of local moments by tuning the gate voltage and the local curvature of the graphene membrane.

Observing and tuning the Kondo effect in graphene is experimentally challenging. Here, the authors identify the spectroscopic signature of Kondo screening in graphene, along with a quantum phase transition between screened and unscreened phases of vacancy magnetic moments.

Post-Synthesis Modifications of Two-Dimensional MoSe2 or MoTe2 by Incorporation of Excess Metal Atoms into the Crystal Structure

Phase engineering has extensively been used to achieve metallization of two-dimensional (2D) semiconducting materials, as it should boost their catalytic properties or improve electrical contacts. In contrast, here we demonstrate compositional phase change by incorporation of excess metals into the crystal structure. We demonstrate post-synthesis restructuring of the semiconducting MoTe₂ or MoSe₂ host material by unexpected easy incorporation of excess Mo into their crystal planes, which causes local metallization. The amount of excess Mo can reach values as high as 10% in MoTe₂ thus creating a significantly altered material compared to its parent structure. The incorporation mechanism is explained by density functional theory in terms of the energy difference of Mo atoms incorporated in the line phases as compared to Mo ad-clusters. Angle resolved photoemission spectroscopy reveals that the incorporated excess Mo induces band gap states up to the Fermi level causing its pinning at these electronic states. The incorporation of excess transition metals in MoTe₂ and MoSe₂ is not limited to molybdenum, but other transition metals can also diffuse into the lattice, as demonstrated experimentally by Ti deposition. The mechanism of incorporation of transition metals in MoSe₂ and MoTe₂ is revealed, which should help to address the challenges in synthesizing defect-free single layer materials by, for example, molecular beam epitaxy. The easy incorporation of metal atoms into the crystal also indicates that the previously assumed picture of a sharp metal/2D-material interface may not be correct, and at least for MoSe₂ and MoTe₂, in-diffusion of metals from metal-contacts into the 2D material has to be considered. Most importantly though, the process of incorporation of transition metals with high concentrations into pristine 2D transition-metal dichalcogenides enables a pathway for their post-synthesis modifications and adding functionalities.

Cation vacancy stabilization of single-atomic-site Pt1/Ni(OH)x catalyst for diboration of alkynes and alkenes

Development of single-atomic-site catalysts with high metal loading is highly desirable but proved to be very challenging. Although utilizing defects on supports to stabilize independent metal atoms has become a powerful method to fabricate single-atomic-site catalysts, little attention has been devoted to cation vacancy defects. Here we report a nickel hydroxide nanoboard with abundant Ni²⁺ vacancy defects serving as the practical support to achieve a single-atomic-site Pt catalyst (Pt₁/Ni(OH)_x) containing Pt up to 2.3 wt% just by a simple wet impregnation method. The Ni²⁺ vacancies are found to have strong stabilizing effect of single-atomic Pt species, which is determined by X-ray absorption spectrometry analyses and density functional theory calculations. This Pt₁/Ni(OH)_x catalyst shows a high catalytic efficiency in diboration of a variety of alkynes and alkenes, yielding an overall turnover frequency value upon reaction completion for phenylacetylene of ~3000 h^-1, which is much higher than other reported heterogeneous catalysts.

Electronic Properties of h-BCN-Blue Phosphorene van der Waals Heterostructures

Van der Waals heterostructures, a new class of materials made of a vertically selective assembly of various 2D monolayers held together by van der Waals forces, have attracted a great deal of attention due to their promise to deliver novel electronic and optoelectronic properties that are not achievable by using individual 2D crystals. Using density functional theory (DFT), it is revealed that van der Waals heterostructures composed of monolayers of hexagonal boron nitride (h-BN) and the latest P allotrope blue phosphorus (blue phosphorene, BlueP) forms a straddling type I band offset for which the band edges exclusively belong to BlueP. This feature enables h-BN to act as a protective coating material to resolve the air instability of BlueP. Furthermore, substitutional doping of C into h-BN (h-BCN) at a suitable concentration induces h-BCN-BlueP into staggered type II band offset. The type II band alignment triggered by the intensified built-in electric field across the sheets implies improved carrier mobility and the suppressed recombination of photogenerated hole pairs. These major benefits can pave the way for the potential functionality of h-BCN-BlueP to be exploited for efficient photovoltaic devices.

Electrochemical reduction of CO2 on graphene supported transition metals - towards single atom catalysts

In this study, we have investigated the use of single metal atoms supported on defective graphene as catalysts for the electrochemical reduction of CO₂ using the first-principles approach and the computational hydrogen electrode model. Reaction pathways to produce a variety of C₁ products CO, HCOOH, HCHO, CH₃OH and CH₄ have been studied in detail for five representative transition metals Ag, Cu, Pd, Pt, and Co. Different pathways were revealed in contrast to those found for metallic crystalline surfaces and nanoparticles. These single atom catalysts have demonstrated a general improvement in rate limiting potentials to generate C₁ hydrocarbons. They also show distinct differences in terms of their efficiency and selectivity in CO₂ reduction, which can be correlated with their elemental properties as a function of their group number in the periodic table. Six best candidates for CH₄ production are identified by conducting computational screening of 28 d-block transition metals. Ag has the lowest overpotential (0.73 V), and is followed by Zn, Ni, Pd, Pt and Ru with overpotentials all below 1 V. Cu in the supported single atom form shows a strong preference towards producing CH₃OH with an overpotential of 0.68 V well below the value of 1.04 V for producing CH₄.

Surface reactivity and vacancy defects in single-layer borophene polymorphs

Single-layer borophene is a novel 2D material which combines high strength, light weight and metallicity. Using first-principles calculations, we systematically investigate the defect formation and surface reactivity in three major borophene polymorphs (α, β and triangular). We find that β-B is generally the most reactive borophene form, while α-B is the least reactive. In particular, there is more than 1.5 eV difference in substitutional energies for typical dopants in β-B and α-B polymorphs. Single vacancy defects can be created quite easily in all borophene sheets with formation energies (0.16 to 1.93 eV) much lower than those in graphene (7.69 eV). Adatom adsorption is exothermic and stabilizes electron-deficient boron monolayers. Many interesting properties arise from the rich structural chemistry of borophene, comprising four-, five-, and six-coordinated atoms, as well as hexagonal vacancies.

Understanding the activity and selectivity of single atom catalysts for hydrogen and oxygen evolution via ab initial study

To identify the specific activity sites for both the HER and OER in experimental realized single transition-metal atom decorated graphene sheets, we assume the number of metal–C bonds (coordination) determines the adsorption strength of reaction intermediates on the metal atom sites.

Insights into the electronic properties and reactivity of graphene-like BC3 supported metal catalysts

Graphene-like BC₃ monolayer is a new two-dimensional nanomaterial with many unique properties, but is still largely unknown.

A computational study of CO oxidation reactions on metal impurities in graphene divacancies

Based on the density functional theory calculations, the formation geometry, electronic properties, and catalytic activity of metal impurities in divacancy graphene (M-DG, M = Mo, Fe, Co, and Ni) were systematically investigated.

Robust Catalysis on 2D Materials Encapsulating Metals: Concept, Application, and Perspective

Great endeavors are undertaken to search for low-cost, rich-reserve, and highly efficient alternatives to replace precious-metal catalysts, in order to cut costs and improve the efficiency of catalysts in industry. However, one major problem in metal catalysts, especially nonprecious-metal catalysts, is their poor stability in real catalytic processes. Recently, a novel and promising strategy to construct 2D materials encapsulating nonprecious-metal catalysts has exhibited inimitable advantages toward catalysis, especially under harsh conditions (e.g., strong acidity or alkalinity, high temperature, and high overpotential). The concept, which originates from unique electron penetration through the 2D crystal layer from the encapsulated metals to promote a catalytic reaction on the outermost surface of the 2D crystal, has been widely applied in a variety of reactions under harsh conditions. It has been vividly described as "chainmail for catalyst." Herein, recent progress concerning this chainmail catalyst is reviewed, particularly focusing on the structural design and control with the associated electronic properties of such heterostructure catalysts, and also on their extensive applications in fuel cells, water splitting, CO₂ conversion, solar cells, metal-air batteries, and heterogeneous catalysis. In addition, the current challenges that are faced in fundamental research and industrial application, and future opportunities for these fantastic catalytic materials are discussed.

Tailoring the optical properties of atomically-thin WS2via ion irradiation

Two-dimensional transition metal dichalcogenides (TMDCs) exhibit excellent optoelectronic properties. However, the large band gaps in many semiconducting TMDCs make optical absorption in the near-infrared (NIR) wavelength regime impossible, which prevents applications of these materials in optical communications. In this work, we demonstrate that Ar⁺ ion irradiation is a powerful post-synthesis technique to tailor the optical properties of the semiconducting tungsten disulfide (WS₂) by creating S-vacancies and thus controlling material stoichiometry. First-principles calculations reveal that the S-vacancies give rise to deep states in the band gap, which determine the NIR optical absorption of the WS₂ monolayer. As the density of the S-vacancies increases, the enhanced NIR linear and saturable absorption of WS₂ is observed, which is explained by the results of first-principles calculations. We further demonstrate that by using the irradiated WS₂ as a saturable absorber in a waveguide system, the passively Q-switched laser operations can be optimized, thus opening new avenues for tailoring the optical response of TMDCs by defect-engineering through ion irradiation.

Effects of energetic ion irradiation on WSe2/SiC heterostructures

The remarkable electronic properties of layered semiconducting transition metal dichalcogenides (TMDs) make them promising candidates for next-generation ultrathin, low-power, high-speed electronics. It has been suggested that electronics based upon ultra-thin TMDs may be appropriate for use in high radiation environments such as space. Here, we present the effects of irradiation by protons, iron, and silver ions at MeV-level energies on a WSe₂/6H-SiC vertical heterostructure studied using XPS and UV-Vis-NIR spectroscopy. It was found that with 2 MeV protons, a fluence of 10¹⁶ protons/cm² was necessary to induce a significant charge transfer from SiC to WSe₂, where a reduction of valence band offset was observed. Simultaneously, a new absorption edge appeared at 1.1 eV below the conduction band of SiC. The irradiation with heavy ions at 10¹⁶ ions/cm² converts WSe₂ into a mixture of WO_x and Se-deficient WSe₂. The valence band is also heavily altered due to oxidation and amorphization. However, these doses are in excess of the doses needed to damage TMD-based electronics due to defects generated in common dielectric and substrate materials. As such, the radiation stability of WSe₂-based electronics is not expected to be limited by the radiation hardness of WSe₂, but rather by the dielectric and substrate.

Recent Advances in Atomic Metal Doping of Carbon-based Nanomaterials for Energy Conversion

Nanostructured metal-contained catalysts are one of the most widely used types of catalysts applied to facilitate some of sluggish electrochemical reactions. However, the high activity of these catalysts cannot be sustained over a variety of pH ranges. In an effort to develop highly active and stable metal-contained catalysts, various approaches have been pursued with an emphasis on metal particle size reduction and doping on carbon-based supports. These techniques enhances the metal-support interactions, originating from the chemical bonding effect between the metal dopants and carbon support and the associated interface, as well as the charge transfer between the atomic metal species and carbon framework. This provides an opportunity to tune the well-defined metal active centers and optimize their activity, selectivity and stability of this type of (electro)catalyst. Herein, recent advances in synthesis strategies, characterization and catalytic performance of single atom metal dopants on carbon-based nanomaterials are highlighted with attempts to understand the electronic structure and spatial arrangement of individual atoms as well as their interaction with the supports. Applications of these new materials in a wide range of potential electrocatalytic processes in renewable energy conversion systems are also discussed with emphasis on future directions in this active field of research.

Strain Controlled Ferromagnetic-Antiferromagnetic Transformation in Mn-Doped Silicene for Information Transformation Devices

A reliable control of magnetic states is central to the use of magnetic nanostructures. Here, by using state-of-the-art density-functional theory calculations, we find that Mn atoms decorated silicene has an anomalously fixed magnetic moment and a high Curie temperature. In addition, a tunable magnetic exchange coupling is achieved for Mn-silicene system with the application of biaxial strain, which induces a transformation from the ferromagnetic (FM) to the antiferromagnetic (AFM) state. As such, an atomic "bit" could be obtained by superimposing strain field once the FM and AFM states are referred to as "1" and "0". Such piezospin nanodevices, which convert mechanical energy into magnetic moment, would offer great potential for future information transmission, as they ultimately combine small size, high-speed operation, and low-power consumption.

Atomic Structure and Dynamics of Single Platinum Atom Interactions with Monolayer MoS2

We have studied atomic level interactions between single Pt atoms and the surface of monolayer MoS₂ using aberration-corrected annular dark field scanning transmission electron microscopy at an accelerating voltage of 60 kV. Strong contrast from single Pt atoms on the atomically resolved monolayer MoS₂ lattice enables their exact position to be determined with respect to the MoS₂ lattice, revealing stable binding sites. In regions of MoS₂ free from surface contamination, the Pt atoms are localized in S vacancy sites and exhibit dynamic hopping to nearby vacancy sites driven by the energy supplied by the electron beam. However, in areas of MoS₂ contaminated with carbon surface layers, the Pt atoms appear at various positions with respect to the underlying MoS₂ lattice, including on top of Mo and in off-axis positions. These variations are due to the Pt bonding with the surrounding amorphous carbon layer, which disrupts the intrinsic Pt-MoS₂ interactions, leading to more varied positions. Density functional theory (DFT) calculations reveal that Pt atoms on the surface of MoS₂ have a small barrier for migration and are stabilized when bound to either a single or double sulfur vacancies. DFT calculations have been used to understand how the catalytic activity of the MoS₂ basal plane for hydrogen evolution reaction is influenced by Pt dopants by variation of the hydrogen adsorption free energy. This strong dependence of catalytic effect on interfacial configurations is shown to be common for a series of dopants, which may provide a means to create and optimize reaction centers.

Atomic Defects and Doping of Monolayer NbSe2

We have investigated the structure of atomic defects within monolayer NbSe₂ encapsulated in graphene by combining atomic resolution transmission electron microscope imaging, density functional theory (DFT) calculations, and strain mapping using geometric phase analysis. We demonstrate the presence of stable Nb and Se monovacancies in monolayer material and reveal that Se monovacancies are the most frequently observed defects, consistent with DFT calculations of their formation energy. We reveal that adventitious impurities of C, N, and O can substitute into the NbSe₂ lattice stabilizing Se divacancies. We further observe evidence of Pt substitution into both Se and Nb vacancy sites. This knowledge of the character and relative frequency of different atomic defects provides the potential to better understand and control the unusual electronic and magnetic properties of this exciting two-dimensional material.

Controlled Doping in Graphene Monolayers by Trapping Organic Molecules at the Graphene-Substrate Interface

We report controlled doping in graphene monolayers through charge-transfer interaction by trapping selected organic molecules between graphene and underneath substrates. Controllability has been demonstrated in terms of shifts in Raman peaks and Dirac points in graphene monolayers. Under field effect transistor geometry, a shift in the Dirac point to the negative (positive) gate voltage region gives an inherent signature of n- (p-)type doping as a consequence of charge-transfer interaction between organic molecules and graphene. The proximity of organic molecules near the graphene surface as a result of trapping is evidenced by Raman and infrared spectroscopies. Density functional theory calculations corroborate the experimental results and also indicate charge-transfer interaction between certain organic molecules and graphene sheets resulting p- (n-)type doping and reveals the donor and acceptor nature of molecules. Interaction between molecules and graphene has been discussed in terms of calculated Mulliken charge-transfer and binding energy as a function of optimized distance.

Theoretical study on geometric, electronic and catalytic performances of Fe dopant pairs in graphene

The formation geometries, electronic structures and catalytic properties of monovacancy and divacancy graphene sheets with two embedded Fe dopants (2Fe-MG and 2Fe-DG) have been systematically investigated using the first-principles calculations.

Theoretical investigation of CO catalytic oxidation by a Fe–PtSe2 monolayer

Theoretical prediction of efficient catalytic CO oxidation over a Fe–PtSe₂ monolayer.

Fe atoms trapped on graphene as a potential efficient catalyst for room-temperature complete oxidation of formaldehyde: a first-principles investigation

Fe atoms trapped on graphene stabilize high-spin intermediates and facilitate spin switching to keep complete oxidation of formaldehyde efficient.

Structural, electronic and catalytic performances of single-atom Fe stabilized by divacancy-nitrogen-doped graphene

The geometric, electronic and catalytic properties of a single-atom Fe embedded GN4 sheet (Fe–GN4) were systematically studied using first-principles calculations.

Defective graphene anchored iron–cobalt nanoparticles for efficient electrocatalytic oxygen reduction

Defective graphene is a promising material to anchor, disperse and interact with metal nanoparticles for synthesizing highly efficient ORR catalysts.

On the mechanism of gas adsorption for pristine, defective and functionalized graphene

Defects are no longer deemed an adverse aspect of graphene.