Epitaxial oxygen getter for a brownmillerite phase transformation in manganite films

Reversible Hydrogen-Induced Phase Transformations in La0.7Sr0.3MnO3 Thin Films Characterized by In Situ Neutron Reflectometry

We report on the mechanism for hydrogen-induced topotactic phase transitions in perovskite (PV) oxides using La_0.7Sr_0.3MnO₃ as a prototypical example. Hydrogenation starts with lattice expansion confirmed by X-ray diffraction (XRD). The strain- and oxygen-vacancy-mediated electron-phonon coupling in turn produces electronic structure changes that manifest through the appearance of a metal insulator transition accompanied by a sharp increase in resistivity. The ordering of initially randomly distributed oxygen vacancies produces a PV to brownmillerite phase (La_0.7Sr_0.3MnO_2.5) transition. This phase transformation proceeds by the intercalation of oxygen vacancy planes confirmed by in situ XRD and neutron reflectometry (NR) measurements. Despite the prevailing picture that hydrogenation occurs by reaction with lattice oxygen, NR results are not consistent with deuterium (hydrogen) presence in the La_0.7Sr_0.3MnO₃ lattice at steady state. The film can reach a highly oxygen-deficient La_0.7Sr_0.3MnO_2.1 metastable state that is reversible to the as-grown composition simply by annealing in air. Theoretical calculations confirm that hydrogenation-induced oxygen vacancy formation is energetically favorable in La_0.7Sr_0.3MnO₃. The hydrogenation-driven changes of the oxygen sublattice periodicity and the electrical and magnetic properties similar to interface effects induced by oxygen-deficient cap layers persist despite hydrogen not being present in the lattice.

Exploring the Spatial Control of Topotactic Phase Transitions Using Vertically Oriented Epitaxial Interfaces

Engineering oxygen vacancy formation and distribution is a powerful route for controlling the oxygen sublattice evolution that affects diverse functional behavior. The controlling of the oxygen vacancy formation process is particularly important for inducing topotactic phase transitions that occur by transformation of the oxygen sublattice. Here we demonstrate an epitaxial nanocomposite approach for exploring the spatial control of topotactic phase transition from a pristine perovskite phase to an oxygen vacancy-ordered brownmillerite (BM) phase in a model oxide La_0.7Sr_0.3MnO₃ (LSMO). Incorporating a minority phase NiO in LSMO films creates ultrahigh density of vertically aligned epitaxial interfaces that strongly influence the oxygen vacancy formation and distribution in LSMO. Combined structural characterizations reveal strong interactions between NiO and LSMO across the epitaxial interfaces leading to a topotactic phase transition in LSMO accompanied by significant morphology evolution in NiO. Using the NiO nominal ratio as a single control parameter, we obtain intermediate topotactic nanostructures with distinct distribution of the transformed LSMO-BM phase, which enables systematic tuning of magnetic and electrical transport properties. The use of self-assembled heterostructure interfaces by the epitaxial nanocomposite platform enables more versatile design of topotactic phase structures and correlated functionalities that are sensitive to oxygen vacancies.

Overlayer deposition-induced control of oxide ion concentration in SrFe0.5Co0.5O2.5 oxygen sponges

Controlling the oxide ion (O2-) concentration in oxides is essential to develop advanced ionic devices, i.e. solid oxide fuel cells, smart windows, memory devices, energy storage devices, and so on. Among many oxides several transition metal (TM)-based perovskite oxides show high oxide ion conductivity, and their physical properties show high sensitivity to the change of the oxide ion concentration. Here, the change in the oxide ion concentration is shown through the overlayer deposition on the SrFe0.5Co0.5O2.5 (SFCO) oxygen sponge film. We grew SFCO films followed by the deposition of two kinds of complex oxide films under exactly the same growth conditions, and observed the changes in the crystal structure, valence states, and magnetic ground states. As the NSMO overlayer grows, strong evidence of oxidation at the O K edge is shown. In addition, the Fe4+ feature is revealed, and the electron valence state of Co increased from 3 to 3.25. The oxide ion concentration of SFCO changes during layer growth due to oxidation or reduction due to differences in chemical potential. The present results might be useful to develop advanced ionic devices using TM-based perovskite oxides.

Three dimensional band-filling control of complex oxides triggered by interfacial electron transfer

The d-band-filling of transition metals in complex oxides plays an essential role in determining their structural, electronic and magnetic properties. Traditionally, at the oxide heterointerface, band-filling control has been achieved via electrostatic modification in the structure of field-effect transistors or electron transfer, which is limited to the quasi-two-dimension at the interface. Here we report a three-dimensional (3D) band-filling control by changing the local lattice coordination in a designed oxide heterostructure. At the LaCoO₃/LaTiO₃ heterointerface, due to the Fermi level mismatch, electrons transfer from LaTiO₃ to LaCoO₃. This triggers destabilisation of the CoO₆ octahedrons, i.e. the formation of lattice configurations with a reduced Co valence. The associated oxygen migration results in the 3D topotactic phase transition of LaCoO₃. Tuned by the thickness of LaTiO₃, different crystalline phases and band-fillings of Co occur, leading to the emergence of different magnetic ground states.

Structural Phase Transitions to 2D and 3D Oxygen Vacancy Patterns in a Perovskite Film Induced by Electrical and Mechanical Nanoprobing

Oxygen vacancy migration and ordering in perovskite oxides enable manipulation of material properties through changes in the cation oxidation state and the crystal lattice. In thin-films, oxygen vacancies conventionally order into equally spaced planes. Here, it is shown that the planar 2D symmetry is broken if a mechanical nanoprobe restricts the chemical lattice expansion that the vacancies generate. Using in situ scanning transmission electron microscopy, a transition from a perovskite structure to a 3D vacancy-ordered phase in an epitaxial La_2/3 Sr_1/3 MnO_{3- δ} film during voltage pulsing under local mechanical straining is imaged. The never-before-seen ordering pattern consists of a complex network of distorted oxygen tetrahedra, pentahedra, and octahedra that, together, produce a corrugated atomic structure with lattice constants varying between 3.5 and 4.6 Å. The giant lattice distortions respond sensitively to strain variations, offering prospects for non-volatile nanoscale physical property control driven by voltage and gated by strain.

Experimental setup combining in situ hard X-ray photoelectron spectroscopy and real-time surface X-ray diffraction for characterizing atomic and electronic structure evolution during complex oxide heterostructure growth

We describe the next-generation system for in situ characterization of a complex oxide thin film and heterostructure growth by pulsed laser deposition (PLD) using synchrotron hard X-rays. The system consists of a PLD chamber mounted on a diffractometer allowing both real-time surface X-ray diffraction (SXRD) and in situ hard X-ray photoelectron spectroscopy (HAXPES). HAXPES is performed in the incident X-ray energy range from 4 to 12 keV using a Scienta EW4000 electron energy analyzer mounted on the PLD chamber fixed parallel with the surface normal. In addition to the standard application mode of HAXPES for disentangling surface from bulk properties, the increased penetration depth of high energy photoelectrons is used for investigation of the electronic structure changes through thin films grown deliberately as variable thickness capping layers. Such heterostructures represent model systems for investigating a variety of critical thickness and dead layer phenomena observed at complex oxide interfaces. In this new mode of operation, in situ HAXPES is used to determine the electronic structure associated with unique structural features identified by real-time SXRD during thin film growth. The system is configured for using both laboratory excitation sources off-line and on-line operation at beamline 33-ID-D at the Advanced Photon Source. We illustrate the performance of the system by preliminary scattering and spectroscopic data on oxygen vacancy ordering induced perovskite-to-brownmillerite reversible phase transformation in La_2/3Sr_1/3MnO₃ films capped with oxygen deficient SrTiO_3-δ (100) layers of varying thickness.

Reversible Control of Physical Properties via an Oxygen-Vacancy-Driven Topotactic Transition in Epitaxial La0.7 Sr0.3 MnO3- δ Thin Films

The vacancy distribution of oxygen and its dynamics directly affect the functional response of complex oxides and their potential applications. Dynamic control of the oxygen composition may provide the possibility to deterministically tune the physical properties and establish a comprehensive understanding of the structure-property relationship in such systems. Here, an oxygen-vacancy-induced topotactic transition from perovskite to brownmillerite and vice versa in epitaxial La_0.7 Sr_0.3 MnO_{3- δ} thin films is identified by real-time X-ray diffraction. A novel intermediate phase with a noncentered crystal structure is observed for the first time during the topotactic phase conversion which indicates a distinctive transition route. Polarized neutron reflectometry confirms an oxygen-deficient interfacial layer with drastically reduced nuclear scattering length density, further enabling a quantitative determination of the oxygen stoichiometry (La_0.7 Sr_0.3 MnO_2.65 ) for the intermediate state. Associated physical properties of distinct topotactic phases (i.e., ferromagnetic metal and antiferromagnetic insulator) can be reversibly switched by an oxygen desorption/absorption cycling process. Importantly, a significant lowering of necessary conditions (temperatures below 100 °C and conversion time less than 30 min) for the oxygen reloading process is found. These results demonstrate the potential applications of defect engineering in the design of perovskite-based functional materials.

Probing vacancy behavior across complex oxide heterointerfaces

Oxygen vacancies ( V O • • ) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxide-oxide interfaces necessitates a direct, spatial understanding of vacancy distributions that define electrochemically active regions. We show vacancies deplete over micrometer-level distances in Nb-doped SrTiO₃ (Nb:SrTiO₃) substrates due to deposition and post-annealing processes. We convert the surface potential across a strontium titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial (<100 nm) vacancy profiles within STO using (T = 500°C) in situ scanning probes and semiconductor analysis. Oxygen scavenging occurring during pulsed laser deposition reduces Nb:STO substantially, which partially reoxidizes in an oxygen-rich environment upon cooling. These results (i) introduce the means to spatially resolve quantitative vacancy distributions across oxide films and (ii) indicate the mechanisms by which oxide thin films enhance and then deplete vacancies within the underlying substrate.

Oxygen Vacancy Ordering Modulation of Magnetic Anisotropy in Strained LaCoO3- x Thin Films

Oxygen vacancy configurations and concentration are coupled with the magnetic, electronic, and transport properties of perovskite oxides, and manipulating the physical properties by tuning the vacancy structures of thin films is crucial for applications in many functional devices. In this study, we report a direct atomic resolution observation of the preferred orientation of vacancy ordering structure in the epitaxial LaCoO_{3- x} (LCO) thin films under various strains from large compressive to large tensile strain utilizing scanning transmission electron microscopy (STEM). Under compressive strains, the oxygen vacancy ordering prefers to be along the planes parallel to the heterointerface. Changing the strains from compressive to tensile, the oxygen vacancy planes turn to be perpendicular to the heterointerface. Aberration-corrected STEM images, electron diffractions, and X-ray diffraction combined with X-ray photoelectron spectroscopy demonstrate that the vacancy concentration increases with increasing misfit strains and vacancy distribution is more ordered and homogeneous. The temperature-dependent magnetization curves show the Curie temperature increases, displaying a positive correlation with the misfit strains. With change in the strain from compressive to tensile, anisotropy fields vary and show large values under tensile strains. It is proposed that oxygen vacancy concentration and preferred ordering planes are responsible for the enhanced magnetic properties of LCO films. Our results have realized a controllable preparation of oxygen vacancy ordering structures via strains and thus provide an effective method to regulate and optimize the physical properties such as magnetic properties by strain engineering.

Quick X-ray reflectivity using monochromatic synchrotron radiation for time-resolved applications

A new technique for the parallel collection of X-ray reflectivity (XRR) data, compatible with monochromatic synchrotron radiation and flat substrates, is described and applied to the in situ observation of thin-film growth. The method employs a polycapillary X-ray optic to produce a converging fan of radiation, incident onto a sample surface, and an area detector to simultaneously collect the XRR signal over an angular range matching that of the incident fan. Factors determining the range and instrumental resolution of the technique in reciprocal space, in addition to the signal-to-background ratio, are described in detail. This particular implementation records ∼5° in 2θ and resolves Kiessig fringes from samples with layer thicknesses ranging from 3 to 76 nm. The value of this approach is illustrated by showing in situ XRR data obtained with 100 ms time resolution during the growth of epitaxial La0.7Sr0.3MnO3 on SrTiO3 by pulsed laser deposition at the Cornell High Energy Synchrotron Source (CHESS). Compared with prior methods for parallel XRR data collection, this is the first method that is both sample-independent and compatible with the highly collimated, monochromatic radiation typical of third-generation synchrotron sources. Further, this technique can be readily adapted for use with laboratory-based sources.

Directing Oxygen Vacancy Channels in SrFeO2.5 Epitaxial Thin Films

Transition-metal oxides (TMOs) with brownmillerite (BM) structures possess one-dimensional oxygen vacancy channels (OVCs), which play a key role in realizing high ionic conduction at low temperatures. The controllability of the vacancy channel orientation, thus, possesses a great potential for practical applications and would provide a better visualization of the diffusion pathways of ions in TMOs. In this study, the orientations of the OVCs in BM-SrFeO_2.5 are stabilized along two crystallographic directions of the epitaxial thin films. The distinctively orientated phases are found to be highly stable and exhibit a considerable difference in their electronic structures and optical properties, which could be understood in terms of orbital anisotropy. The control of the OVC orientation further leads to modifications in the hydrogenation of the BM-SrFeO_2.5 thin films. The results demonstrate a strong correlation between crystallographic orientations, electronic structures, and ionic motion in the BM structure.

Tuning the Two-Dimensional Electron Liquid at Oxide Interfaces by Buffer-Layer-Engineered Redox Reactions

Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO₃ (STO) achieved using polar La_7/8Sr_1/8MnO₃ (LSMO) buffer layers to manipulate both polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant X-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer layers provides a new approach for the design of functional oxide interfaces.

Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films

Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeO_x epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation. Using real-time optical spectroscopy, the phase transition between the two structurally distinct phases (i.e., brownmillerite and perovskite) is quantitatively monitored, and a pressure-temperature phase diagram of the topotactic transformation is constructed for the first time. The transformation at relatively low temperatures is attributed to a markedly small difference in Gibbs free energy compared to the known similar class of materials to date. This study highlights the phase stability and reversibility of SrFeO_x thin films, which is highly relevant for energy and environmental applications exploiting the redox reactions.

In Situ Observation of Oxygen Vacancy Dynamics and Ordering in the Epitaxial LaCoO3 System

Vacancy dynamics and ordering underpin the electrochemical functionality of complex oxides and strongly couple to their physical properties. In the field of the epitaxial thin films, where connection between chemistry and film properties can be most clearly revealed, the effects related to oxygen vacancies are attracting increasing attention. In this article, we report a direct, real-time, atomic level observation of the formation of oxygen vacancies in the epitaxial LaCoO₃ thin films and heterostructures under the influence of the electron beam utilizing scanning transmission electron microscopy (STEM). In the case of LaCoO₃/SrTiO₃ superlattice, the formation of the oxygen vacancies is shown to produce quantifiable changes in the interatomic distances, as well as qualitative changes in the symmetry of the Co sites manifested as off-center displacements. The onset of these changes was observed in both the [100]_pc and [110]_pc orientations in real time. Additionally, annular bright field images directly show the formation of oxygen vacancy channels along [110]pc direction. In the case of 15 u.c. LaCoO₃ thin film, we observe the sequence of events during beam-induced formation of oxygen vacancy ordered phases and find them consistent with similar processes in the bulk. Moreover, we record the dynamics of the nucleation, growth, and defect interaction at the atomic scale as these transformations happen. These results demonstrate that we can track dynamic oxygen vacancy behavior with STEM, generating atomic-level quantitative information on phase transformation and oxygen diffusion.

Spatially Confined Spin Polarization and magnetic sublattice control in (La,Sr)MnO3-δ Thin Films by Oxygen Vacancy Ordering

Perovskite oxides are known for their strong structure property coupling and functional properties such as ferromagntism, ferroelectricity and high temperature superconductivity. While the effect of ordered cation vacancies on functional properties have been much studied, the possibility of tuning the functionality through anion vacancy ordering has received much less attention. Oxygen vacancies in ferromagnetic La_0.7Sr_0.3MnO_3−δ thin films have recently been shown to accumulate close to interfaces and form a brownmillerite structure (ABO_2.5). This structure has alternating oxygen octahedral and tetrahedral layers along the stacking direction, making it a basis for a family of ordered anion defect controlled materials. We use density functional theory to study how structure and properties depend on oxygen stoichiometry, relying on a block-by-block approach by including additional octahedral layers in-between each tetrahedral layer. It is found that the magnetic and electronic structures follow the layers enforced by the ordered oxygen vacancies. This results in spatially confined electronic conduction in the octahedral layers, and decoupling of the magnetic sub-lattices in the octahedral and tetrahedral layers. These results demonstrate that anion defect engineering is a promising tool to tune the properties of functional oxides, adding a new avenue for developing functional oxide device technology.

Direct observation of oxygen vacancy-driven structural and resistive phase transitions in La2/3Sr1/3MnO3

Resistive switching in transition metal oxides involves intricate physical and chemical behaviours with potential for non-volatile memory and memristive devices. Although oxygen vacancy migration is known to play a crucial role in resistive switching of oxides, an in-depth understanding of oxygen vacancy-driven effects requires direct imaging of atomic-scale dynamic processes and their real-time impact on resistance changes. Here we use in situ transmission electron microscopy to demonstrate reversible switching between three resistance states in epitaxial La_2/3Sr_1/3MnO₃ films. Simultaneous high-resolution imaging and resistance probing indicate that the switching events are caused by the formation of uniform structural phases. Reversible horizontal migration of oxygen vacancies within the manganite film, driven by combined effects of Joule heating and bias voltage, predominantly triggers the structural and resistive transitions. Our findings open prospects for ionotronic devices based on dynamic control of physical properties in complex oxide nanostructures.

An in-depth understanding of oxygen vacancy-driven effects is necessary for the development of functional ionic devices. Using simultaneous high-resolution imaging and resistance probing, Yao et al. demonstrate oxygen vacancy-driven structural and resistive transitions between three distinct phases in La_2/3Sr_1/3MnO₃.

Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces

Universal, giant and nonvolatile resistive switching is demonstrated for oxide tunnel junctions with ferroelectric PbZr0.2 Ti0.8 O3 , ferroelectric BaTiO3, and paraelectric SrTiO3 tunnel barriers. The effects are caused by reversible migration of oxygen vacancies between the tunnel barrier and bottom La2/3 Sr1/3 MnO3 electrode. The switching process, which is driven by large electric fields, is efficient down to a temperature of 5 K.

Interface Reactions in LSMO-Metal Hybrid Structures

Perovskites form a class of promising materials for the development of multifunctional devices but require reliable strategies for forming electrical contacts without compromising functionality. We explore the interactions of a range of metal contacts with ferromagnetic oxide La0.7Sr0.3MnO3 (LSMO) and discuss their impact on the magnetic, structural, and chemical properties of the oxide. Although the noble metals gold and silver have negligible impact, metals typically used as adhesion layers, such as titanium and chromium, drive substantial reduction of the oxide, impairing its performance. These effects can be suppressed by inserting a thin barrier layer, such as the conductive oxide SrRuO3.

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metal-insulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La(1-x)Sr(x)MnO3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikov-de Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.

Direct observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO3/LaxSr1-xMnO3 interface

The development of interface-based magnetoelectric devices necessitates an understanding of polarization-mediated electronic phenomena and atomistic polarization screening mechanisms. In this work, the LSMO/BFO interface is studied on a single unit-cell level through a combination of direct order parameter mapping by scanning transmission electron microscopy and electron energy-loss spectroscopy. We demonstrate an unexpected ~5% lattice expansion for regions with negative polarization charge, with a concurrent anomalous decrease of the Mn valence and change in oxygen K-edge intensity. We interpret this behaviour as direct evidence for screening by oxygen vacancies. The vacancies are predominantly accumulated at the second atomic layer of BFO, reflecting the difference of ionic conductivity between the components. This vacancy exclusion from the interface leads to the formation of a tail-to-tail domain wall. At the same time, purely electronic screening is realized for positive polarization charge, with insignificant changes in lattice and electronic properties. These results underline the non-trivial role of electrochemical phenomena in determining the functional properties of oxide interfaces. Furthermore, these behaviours suggest that vacancy dynamics and exclusion play major roles in determining interface functionality in oxide multilayers, providing clear implications for novel functionalities in potential electronic devices.

In situ TEM analysis of resistive switching in manganite based thin-film heterostructures

The mechanism of the electric-pulse induced resistance change effect in Au/Pr0.65Ca0.35MnO3/SrTi0.99Nb0.01O3 thin-film samples is studied by means of in situ electrical stimulation inside a transmission electron microscope. A detailed equivalent-circuit model analysis of the measured current-voltage characteristics provides crucial information for the proper interpretation of the microscopy results. The electrical transport data of the electron-transparent samples used for the in situ investigations is verified by comparison to measurements of unpatterned thin-film samples. We find comprehensive evidence for electrochemical oxygen vacancy migration affecting the potential barrier of the pn junction between Pr0.65Ca0.35MnO3 and SrTi0.99Nb0.01O3 as well as the resistance of the manganite bulk. The high-resistance state formation in the Pr0.65Ca0.35MnO3 bulk is frequently accompanied by structural transformations, namely detwinning and superstructure formation, most likely as the result of the joint impact of dynamic charge inhomogenities by oxygen vacancy migration and injection of high carrier densities at the electrodes.

Electron-beam-induced Perovskite-Brownmillerite-Perovskite structural phase transitions in epitaxial La2/3Sr1/3MnO3 films

Structural phase transitions driven by oxygen-vacancy ordering can drastically affect the properties of transition metal oxides. The focused electron beam of a transmission electron microscope (TEM) can be used to control structural phase transitions in epitaxial La2/3Sr1/3MnO3. The ability to induce and characterize oxygen-deficient structural phases simultaneously in a continuous and controllable manner opens up new pathways for atomic-scale studies of transition metal oxides and other complex materials.

Tuning the entanglement between orbital reconstruction and charge transfer at a film surface

The interplay between orbital, charge, spin, and lattice degrees of freedom is at the core of correlated oxides. This is extensively studied at the interface of heterostructures constituted of two-layer or multilayer oxide films. Here, we demonstrate the interactions between orbital reconstruction and charge transfer in the surface regime of ultrathin (La,Sr)MnO₃, which is a model system of correlated oxides. The interactions are manipulated in a quantitative manner by surface symmetry-breaking and epitaxial strain, both tensile and compressive. The established charge transfer, accompanied by the formation of oxygen vacancies, provides a conceptually novel vision for the long-term problem of manganites—the severe surface/interface magnetization and conductivity deterioration. The oxygen vacancies are then purposefully tuned by cooling oxygen pressure, markedly improving the performances of differently strained films. Our findings offer a broad opportunity to tailor and benefit from the entanglements between orbit, charge, spin, and lattice at the surface of oxide films.

Topotactic phase transformation of the brownmillerite SrCoO2.5 to the perovskite SrCoO3- δ

Pulsed laser epitaxy of brownmillerite SrCoO2.5 thin films and their phase transformation to the perovskite SrCoO3-δ are investigated. While the direct growth of the fully oxidized perovskite films is found to be an arduous task, filling some of oxygen vacancies into SrCoO2.5 by topotactic oxidation accompanies systematic evolution of electronic, magnetic, and thermoelectric properties, useful for many information and energy technologies.

Probing oxygen vacancy concentration and homogeneity in solid-oxide fuel-cell cathode materials on the subunit-cell level

Oxygen vacancy distributions and dynamics directly control the operation of solid-oxide fuel cells and are intrinsically coupled with magnetic, electronic and transport properties of oxides. For understanding the atomistic mechanisms involved during operation of the cell it is highly desirable to know the distribution of vacancies on the unit-cell scale. Here, we develop an approach for direct mapping of oxygen vacancy concentrations based on local lattice parameter measurements by scanning transmission electron microscopy. The concept of chemical expansivity is demonstrated to be applicable on the subunit-cell level: local stoichiometry variations produce local lattice expansion that can be quantified. This approach was successfully applied to lanthanum strontium cobaltite thin films epitaxially grown on substrates of different symmetry, where polarized neutron reflectometry revealed a strong difference in magnetic properties. The different vacancy content found in the two films suggests the change in oxygen chemical potential as a source of distinct magnetic properties, opening pathways for structural tuning of the vacancy concentrations and their gradients.