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Liu J, Wang H, Shi X, Zhang X. Prediction of superconductivity in a series of tetragonal transition metal dichalcogenides. MATERIALS HORIZONS 2024. [PMID: 38501208 DOI: 10.1039/d4mh00141a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Transition metal dichalcogenides (TMDCs) represent a well-known material family with diverse structural phases and rich electronic properties; they are thus an ideal platform for studying the emergence and exotic phenomenon of superconductivity (SC). Herein, we propose the existence of tetragonal TMDCs with a distorted Lieb (dLieb) lattice structure and the stabilized transition metal disulfides (MS2), including dLieb-ZrS2, dLieb-NbS2, dLieb-MnS2, dLieb-FeS2, dLieb-ReS2, and dLieb-OsS2. Except for semiconducting dLieb-ZrS2 and magnetic dLieb-MnS2, the rest of metallic dLieb-MS2 was found to exhibit intrinsic SC with the transition temperature (TC) ranging from ∼5.4 to ∼13.0 K. The TC of dLieb-ReS2 and dLieb-OsS2 exceeded 10 K and was higher than that of the intrinsic SC in the known metallic TMDCs, which is attributed to the significant phonon-softening enhanced electron-phonon coupling strength. Different from the Ising spin-orbit coupling (SOC) effect in existing non-centrosymmetric TMDCs, the non-magnetic dLieb-MS2 monolayers exhibit the Dresselhaus SOC effect, which is featured by in-plane spin orientations and will give rise to the topological SC under proper conditions. In addition to enriching the structural phases of TMDCs, our work predicts a series of SC candidates with high intrinsic TC and topological non-triviality used for fault-tolerant quantum computation.
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Affiliation(s)
- Jiale Liu
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
| | - Huidong Wang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
| | - Xiaojun Shi
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
| | - Xiaoming Zhang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
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Huang L, Lu D, Zeng W, Zhou Q. Pt-Doped HfS 2 Monolayer as a Novel Sensor and Scavenger for Dissolved Gases (H 2, CO 2, CH 4, and C 2H 2) in Transformer Oil: A Density Functional Theory Study. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:12920-12930. [PMID: 37643474 DOI: 10.1021/acs.langmuir.3c02110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/31/2023]
Abstract
Detecting the types and concentrations of dissolved gases in insulating oil by resistivity-type sensors is an extremely effective means for diagnosing faults in an oil-immersed transformer. However, further breakthroughs and innovations are needed in gas-sensitive materials for preparing high-performance resistivity-type sensors. In this investigation, the application possibility of using Pt-doped HfS2 (Pt-HfS2) as gas-sensitive materials for the detection of dissolved H2, CO2, CH4, and C2H2 in oil has been verified by analyzing the adsorption energy (Ead), differential charge density (DCD), density of states (DOS), frontier molecular orbital, and desorption time based on density functional theory (DFT). The outcomes suggest that the band gap of HfS2 is obviously narrowed after doping Pt at the position of the bridge between the S and Hf atoms, resulting in a significant increase in the conductivity of HfS2. The low adsorption energy implies that there is only weak physical adsorption between Pt-HfS2 and CO2 (-0.783 eV). In contrast, the highly hybridized atomic orbitals of Pt with H2, CH4, and C2H2 indicate that strong chemical adsorption reactions occur. Two-dimensional Pt-HfS2 as a gas sensor has a great monitoring performance for CH4 at 298 K (room temperature). This research serves as theoretical guidelines for probing the application potential of Pt-HfS2 in fault diagnosis and predictive maintenance of an oil-immersed transformer.
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Affiliation(s)
- Long Huang
- College of Engineering and Technology, Southwest University, Chongqing 400715, China
| | - Detao Lu
- College of Engineering and Technology, Southwest University, Chongqing 400715, China
| | - Wen Zeng
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - Qu Zhou
- College of Engineering and Technology, Southwest University, Chongqing 400715, China
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3
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Chiu C, Wang C, Huang B, Kuo J. Electronic properties of 3
d
transition metal dihalide monolayers predicted by
DFT
methods: Is there a pattern or are the results random? J CHIN CHEM SOC-TAIP 2022. [DOI: 10.1002/jccs.202200487] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Affiliation(s)
- Cheng‐chau Chiu
- Department of Chemistry National Sun Yat‐sen University Kaohsiung Taiwan
- Center for Theoretical and Computational Physics National Sun Yat‐sen University Kaohsiung Taiwan
- Green Hydrogen Research Center National Sun Yat‐sen University Kaohsiung Taiwan
- Institute of Atomic and Molecular Sciences Academia Sinica Taipei Taiwan
| | - Chung‐Yu Wang
- Institute of Atomic and Molecular Sciences Academia Sinica Taipei Taiwan
| | - Bo‐Jie Huang
- Institute of Atomic and Molecular Sciences Academia Sinica Taipei Taiwan
| | - Jer‐Lai Kuo
- Institute of Atomic and Molecular Sciences Academia Sinica Taipei Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program Academia Sinica Taipei Taiwan
- Department of Chemistry National Tsing Hua University Hsinchu Taiwan
- International Graduate Program of Molecular Science and Technology (NTU‐MST) National Taiwan University Taipei Taiwan
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4
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Singh J, Shao JH, Chen GT, Wu HS, Tsai ML. The growth mechanism and intriguing optical and electronic properties of few-layered HfS 2. NANOSCALE ADVANCES 2022; 5:171-178. [PMID: 36605793 PMCID: PMC9765574 DOI: 10.1039/d2na00578f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/28/2022] [Accepted: 11/05/2022] [Indexed: 06/17/2023]
Abstract
Due to electronic properties superior to group VIB (Mo and W) transition metal dichalcogenides (TMDs), group IVB (Hf and Zr) TMDs have become intriguing materials in next-generation nanoelectronics. Therefore, the growth of few-layered hafnium disulfide (HfS2) on c-plane sapphire as well as on a SiO2/Si substrate has been demonstrated using chemical vapour deposition (CVD). The structural properties of HfS2 were investigated by recording X-ray diffraction patterns and Raman spectra. The XRD results reveal that the layers are well oriented along the (0001) direction and exhibit the high crystalline quality of HfS2. The Raman spectra confirm the in-plane and out-plane vibration of Hf and S atoms. Moreover, the HfS2 layers exhibit strong absorption in the UV to visible region. The HfS2 layer-based photodetector shows a photoresponsivity of ∼1.6, ∼0.38, and ∼0.21 μA W-1 corresponding to 9, 38, and 68 mW cm-2, respectively under green light illumination and is attributed to the generation of a large number of electron-hole pairs in the active region of the device. Besides, it also exhibits the highly crystalline structure of HfS2 at high deposition temperature. The PL spectrum shows a single peak at ∼1.8 eV and is consistent with the pristine indirect bandgap of HfS2 (∼2 eV). Furthermore, a few layered HfS2 back gate field-effect transistor (FET) is fabricated based on directly grown HfS2 on SiO2/Si, and the device exhibits p-type behaviour. Thus, the controllable and easy growth method opens the latest pathway to synthesize few layered HfS2 on different substrates for various electronic and optoelectronic devices.
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Affiliation(s)
- Jitendra Singh
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology Taipei 106335 Taiwan
- Department of Physics, Udit Narayan Post Graduate College Padrauna Kushinagar 274304 Uttar Pradesh India
| | - Jia-Hui Shao
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology Taipei 106335 Taiwan
| | - Guan-Ting Chen
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology Taipei 106335 Taiwan
| | - Han-Song Wu
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology Taipei 106335 Taiwan
| | - Meng-Lin Tsai
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology Taipei 106335 Taiwan
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Rybak M, Woźniak T, Birowska M, Dybała F, Segura A, Kapcia KJ, Scharoch P, Kudrawiec R. Stress-Tuned Optical Transitions in Layered 1T-MX 2 (M=Hf, Zr, Sn; X=S, Se) Crystals. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3433. [PMID: 36234562 PMCID: PMC9565717 DOI: 10.3390/nano12193433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 09/23/2022] [Accepted: 09/24/2022] [Indexed: 06/16/2023]
Abstract
Optical measurements under externally applied stresses allow us to study the materials' electronic structure by comparing the pressure evolution of optical peaks obtained from experiments and theoretical calculations. We examine the stress-induced changes in electronic structure for the thermodynamically stable 1T polytype of selected MX2 compounds (M=Hf, Zr, Sn; X=S, Se), using the density functional theory. We demonstrate that considered 1T-MX2 materials are semiconducting with indirect character of the band gap, irrespective to the employed pressure as predicted using modified Becke-Johnson potential. We determine energies of direct interband transitions between bands extrema and in band-nesting regions close to Fermi level. Generally, the studied transitions are optically active, exhibiting in-plane polarization of light. Finally, we quantify their energy trends under external hydrostatic, uniaxial, and biaxial stresses by determining the linear pressure coefficients. Generally, negative pressure coefficients are obtained implying the narrowing of the band gap. The semiconducting-to-metal transition are predicted under hydrostatic pressure. We discuss these trends in terms of orbital composition of involved electronic bands. In addition, we demonstrate that the measured pressure coefficients of HfS2 and HfSe2 absorption edges are in perfect agreement with our predictions. Comprehensive and easy-to-interpret tables containing the optical features are provided to form the basis for assignation of optical peaks in future measurements.
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Affiliation(s)
- Miłosz Rybak
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Tomasz Woźniak
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Magdalena Birowska
- Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Pasteura St. 5, 02-093 Warsaw, Poland
| | - Filip Dybała
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Alfredo Segura
- Departamento de Física Aplicada-ICMUV, Malta-Consolider Team, Universitat de València, 46100 Burjassot, Spain
| | - Konrad J. Kapcia
- Institute of Spintronics and Quantum Information, Faculty of Physics, Adam Mickiewicz University in Poznań, ul. Uniwersytetu Poznańskiego 2, 61-614 Poznań, Poland
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg, Germany
| | - Paweł Scharoch
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Robert Kudrawiec
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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6
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Muhammad Z, Islam R, Wang Y, Autieri C, Lv Z, Singh B, Vallobra P, Zhang Y, Zhu L, Zhao W. Laser Irradiation Effect on the p-GaSe/n-HfS 2 PN-Heterojunction for High-Performance Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:35927-35939. [PMID: 35867860 DOI: 10.1021/acsami.2c08430] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D)-based PN-heterojunction revealed a promising future of atomically thin optoelectronics with diverse functionalities in different environments. Herein, we reported a p-GaSe/n-HfS2 van der Waals (vdW) heterostructure for high-performance photodetectors and investigated the laser irradiation effect on the fabricated device. The fabricated 2D vdW heterostructure revealed a high photoresponsivity of 1 × 104 A W-1 with a photocurrent value of 377 nA due to unique type-II band alignment and enhanced surface potential under light illumination, which is further confirmed by density functional theory (DFT) calculations. Before laser irradiation, the device showed high field-effect mobility (μEF) of 26.37 cm2 V-1 s-1, ON/OFF ratio of ∼105, and threshold voltage swing (SS) of ∼463 mV dec-1. With the exposure of 690 mW cm-2 laser power density, μEF reached 204 cm2 V-1 s-1, although ∼2 V ΔVth shifts are observed along with the SS decreased to 175 mV dec-1. Interestingly, the reduced SS shows better channel control of the fabricated device with laser power. Similarly, the ON/OFF ratio decreased to ∼1.29 × 103. The results indicate that the creation of oxide trap charges at the interface of SiO2 and PN-heterojunction layers was observed with voltage biasing and high laser power density. The degradation of electrical parameters is attributed to fewer interface trap charges per surface area of the device rather than direct damage in PN-heterojunction layers. Considering the excellent 2D electronic properties, these materials are better candidates for future high-radiation environments.
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Affiliation(s)
- Zahir Muhammad
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Rajibul Islam
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Yan Wang
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Carmine Autieri
- International Research Centre Magtop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
- Consiglio Nazionale delle Ricerche CNR-SPIN, UOS Salerno, I-84084 Fisciano, Salerno, Italy
| | - Ziyu Lv
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Bahadur Singh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
| | - Pierre Vallobra
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Yue Zhang
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Ling Zhu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Weisheng Zhao
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
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Razeghizadeh M, Pourfath M. First principles study on structural, electronic and optical properties of HfS 2(1-x)Se 2x and ZrS 2(1-x)Se 2x ternary alloys. RSC Adv 2022; 12:14061-14068. [PMID: 35558829 PMCID: PMC9092027 DOI: 10.1039/d2ra01905a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Accepted: 05/01/2022] [Indexed: 11/29/2022] Open
Abstract
Alloying 2D transition metal dichalcogenides (TMDs) with dopants to achieve ternary alloys is as an efficient and scalable solution for tuning the electronic and optical properties of two-dimensional materials. This study provides a comprehensive study on the electronic and optical properties of ternary HfS2(1−x)Se2(x) and ZrS2(1−x)Se2(x) [0 ≤ x ≤ 1] alloys, by employing density functional theory calculations along with random phase approximation. Phonon dispersions were also obtained by using density functional perturbation theory. The results indicate that both of the studied ternary families are stable and the increase of Selenium concentration in HfS2(1−x)Se2(x) and ZrS2(1−x)Se2(x) alloys results in a linear decrease of the electronic bandgap from 2.15 (ev) to 1.40 (ev) for HfS2(1−x)Se2(x) and 1.94 (ev) to 1.23 (ev) for ZrS2(1−x)Se2(x) based on the HSE06 functional. Increasing the Se concentration in the ternary alloys results in a red shift of the optical absorption spectra such that the main absorption peaks of HfS2(1−x)Se2(x) and ZrS2(1−x)Se2(x) cover a broad visible range from 3.153 to 2.607 eV and 2.405 to 1.908 eV, respectively. The studied materials appear to be excellent base materials for tunable electronic and optoelectronic devices in the visible range. Adding Selenium to HfS2 and ZrS2 two-dimensional materials allows tuning the optical properties in a wide visible spectrum that can be used in various electronic and optical applications, including solar cells.![]()
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Affiliation(s)
- Mohammadreza Razeghizadeh
- School of Electrical and Computer Engineering, College of Engineering, University of Tehran Tehran 14395-515 Iran
| | - Mahdi Pourfath
- School of Electrical and Computer Engineering, College of Engineering, University of Tehran Tehran 14395-515 Iran
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8
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Abstract
The quest for a clean, renewable and sustainable energy future has been highly sought for by the scientific community over the last four decades. Photocatalytic water splitting is a very promising technology to proffer a solution to present day environmental pollution and energy crises by generating hydrogen fuel through a “green route” without environmental pollution. Transition metal dichalcogenides (TMDCs) have outstanding properties which make them show great potential as effective co-catalysts with photocatalytic materials such as TiO2, ZnO and CdS for photocatalytic water splitting. Integration of TMDCs with a photocatalyst such as TiO2 provides novel nanohybrid composite materials with outstanding characteristics. In this review, we present the current state of research in the application of TMDCs in photocatalytic water splitting. Three main aspects which consider their properties, advances in the synthesis routes of layered TMDCs and their composites as well as their photocatalytic performances in the water splitting reaction are discussed. Finally, we raise some challenges and perspectives in their future application as materials for water-splitting photocatalysts.
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9
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Lin DY, Shih YT, Tseng WC, Lin CF, Chen HZ. Influence of Mn, Fe, Co, and Cu Doping on the Photoelectric Properties of 1T HfS 2 Crystals. MATERIALS (BASEL, SWITZERLAND) 2021; 15:173. [PMID: 35009321 PMCID: PMC8745773 DOI: 10.3390/ma15010173] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2021] [Revised: 12/16/2021] [Accepted: 12/23/2021] [Indexed: 06/14/2023]
Abstract
Doping plays a vital role in the application of transition-metal dichalcogenides (TMDCs) because it can increase the functionality of TMDCs by tuning their native characteristics. In this study, the influence of Mn, Fe, Co, and Cu doping on the photoelectric properties of HfS2 was investigated. Pristine, Mn-, Fe-, Co-, and Cu-doped HfS2 crystals were grown using the chemical vapor transport method. Scanning electron microscopy images showed that the crystals were layered and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy measurements confirmed that the crystals were in the 1T-phase with a CdI2-like structure. The bandgap of pristine HfS2 obtained from the absorption and photoconductivity spectra was approximately 1.99 eV. As the dopant changed from Mn, Fe, and Co, to Cu, the bandgap gradually increased. The activation energies of the samples were determined using temperature-dependent current-voltage curves. After doping, the activation energy decreased, and the Co-doped HfS2 exhibited the smallest activation energy. Time-resolved photoresponse measurements showed that doping improved the response of HfS2 to light; the Co-doped HfS2 exhibited the best response. The photoresponsivity of HfS2 as a function of the laser power and bias voltage was measured. After doping, the photoresponsivity increased markedly; the Co-doped HfS2 exhibited the highest photoresponsivity. All the experimental results indicated that doping with Mn, Fe, Co, and Cu significantly improved the photoresponsive performance of HfS2, of which Co-doped HfS2 had the best performance.
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Affiliation(s)
- Der-Yuh Lin
- Department of Electronic Engineering, National Changhua University of Education, Changhua 500208, Taiwan;
| | - Yu-Tai Shih
- Department of Physics, National Changhua University of Education, Changhua 500207, Taiwan
| | - Wei-Chan Tseng
- Graduate Institute of Photonics, National Changhua University of Education, Changhua 500207, Taiwan;
| | - Chia-Feng Lin
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402202, Taiwan;
| | - Hone-Zern Chen
- Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 412406, Taiwan;
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10
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Jahn YM, Ya'akobovitz A. Outstanding stretchability and thickness-dependent mechanical properties of 2D HfS 2, HfSe 2, and hafnium oxide. NANOSCALE 2021; 13:18458-18466. [PMID: 34608919 DOI: 10.1039/d1nr04240h] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We experimentally determine the elastic properties of 2D HfS2 and HfSe2 - two emerging nano-materials whose moderate energy bandgap and dielectric oxidized layer make them highly attractive for functional electronic and optoelectronic systems. We found that the average Young's moduli of HfS2 and HfSe2 nano-drumheads are relatively low (45.3 ± 3.7 GPa for a 12.2 nm thick HfS2 and 39.3 ± 8.9 GPa for a 13.4 nm thick HfSe2) and depend on the thickness of the nano-drumhead (increasing with thickness for HfS2 and decreasing for HfSe2). Moreover, both materials demonstrate outstanding stretchability (fracture strength and maximal strain of 5.7 ± 0.4 GPa and 12.2-14.3%, respectively, for HfS2; fracture strength and maximal strain of 4.5 ± 1.4 GPa and 14.0-20.9%, respectively, for HfSe2), which far exceeds the stretchability of other 2D materials and of polymers that are commonly used in flexible electronic applications. Finally, we describe the controlled oxidation of HfSe2 using a relatively simple laser treatment, which increased the Young's moduli of the thin oxidized layers to 182.6 ± 54.3 GPa. The extraordinary elastic properties of HfS2 and HfSe2, together with their excellent electrical and optoelectrical properties, make these 2D materials highly attractive for use in strain engineering and in various stretchable electronic and optoelectronic applications, such as wearable devices.
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Affiliation(s)
- Yarden Mazal Jahn
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev, Israel.
| | - Assaf Ya'akobovitz
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev, Israel.
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11
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Kim Y, Woo WJ, Kim D, Lee S, Chung SM, Park J, Kim H. Atomic-Layer-Deposition-Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005907. [PMID: 33749055 DOI: 10.1002/adma.202005907] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2020] [Revised: 10/16/2020] [Indexed: 06/12/2023]
Abstract
Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigation of industry-compatible synthesis techniques is of key importance. In this respect, it is important to study 2D TMC materials synthesized by the atomic layer deposition (ALD) technique, which is widely applied in industries. In addition to the synthesis of 2D TMCs, ALD is used to modulate the characteristic of 2D TMCs such as their carrier density and morphology. So far, the improvement of thin film uniformity without oxidation and the synthesis of low-dimensional nanomaterials on 2D TMCs have been the research focus. Herein, the synthesis and modulation of 2D TMCs by ALD is described, and the characteristics of ALD-based TMCs used in nanoelectronics, sensors, and energy applications are discussed.
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Affiliation(s)
- Youngjun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Whang Je Woo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Donghyun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Sangyoon Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Seung-Min Chung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Jusang Park
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
| | - Hyungjun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, Republic of Korea
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12
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Xiong H, Xu L, Gao C, Zhang Q, Deng M, Wang Q, Zhang J, Fuchs D, Li W, Cui A, Shang L, Jiang K, Hu Z, Chu J. Optically Modulated HfS 2-Based Synapses for Artificial Vision Systems. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50132-50140. [PMID: 34662123 DOI: 10.1021/acsami.1c14332] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The simulation of human brain neurons by synaptic devices could be an effective strategy to break through the notorious "von Neumann Bottleneck" and "Memory Wall". Herein, opto-electronic synapses based on layered hafnium disulfide (HfS2) transistors have been investigated. The basic functions of biological synapses are realized and optimized by modifying pulsed light conditions. Furthermore, 2 × 2 pixel imaging chips have also been developed. Two-pixel visual information is illuminated on diagonal pixels of the imaging array by applying light pulses (λ = 405 nm) with different pulse frequencies, mimicking short-term memory and long-term memory characteristics of the human vision system. In addition, an optically/electrically driven neuromorphic computation is demonstrated by machine learning to classify hand-written numbers with an accuracy of about 88.5%. This work will be an important step toward an artificial neural network comprising neuromorphic vision sensing and training functions.
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Affiliation(s)
- Hao Xiong
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liping Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Center for Advanced Electronic Materials and Devices, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Caifang Gao
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Qing Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Menghan Deng
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Qiangfei Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401123, China
| | - Dirk Fuchs
- Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology, Karlsruhe 75021, Germany
| | - Wenwu Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
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Cao Y, Zhu S, Bachmann J. HfS 2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition. Dalton Trans 2021; 50:13066-13072. [PMID: 34581330 PMCID: PMC8477444 DOI: 10.1039/d1dt01232k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2021] [Accepted: 08/03/2021] [Indexed: 11/21/2022]
Abstract
As a member of the two-dimensional metal dichalcogenide family, HfS2 has emerged as a promising material for various optoelectronic applications. Atomic layer deposition is widely used in microelectronics manufacturing with unique properties in terms of accurate thickness control and high conformality. In this work, a simple and versatile method based on the atomic layer deposition principles is presented to generate hafnium disulfide from the solution phase ('solution ALD' or sALD). For ease of comparison with the traditional gaseous atomic layer deposition (gALD) method, the same precursors are used, namely tetrakis-(dimethylamido) hafnium(IV) and H2S. The deposit is characterized on several different oxide substrates by spectroscopic ellipsometry, scanning electron microscopy, and X-ray photoelectron spectroscopy. In the saturated regime, the growth rate depends on the substrate nature and is between 0.4 and 0.6 Å per sALD cycle. This growth rate determined at room temperature is lower than with the gALD process reported at 100 °C recently. At those low deposition temperatures, the films remain in an amorphous state. This success in sALD expands the range of material classes available by the new method, adding transition metal dichalcogenides to the list containing oxides, cubic sulfides, hydrides, and organics so far. It promises to overcome the precursor constraints associated with the traditional gALD method, in particular the volatility requirement.
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Affiliation(s)
- Yuanyuan Cao
- Chemistry of Thin Film Materials (CTFM), Interdisciplinary Center of Nanostructured Films (IZNF), Friedrich Alexander University of Erlangen-Nuremberg, Cauerstr. 3, 91058 Erlangen, Germany.
| | - Sha Zhu
- Chemistry of Thin Film Materials (CTFM), Interdisciplinary Center of Nanostructured Films (IZNF), Friedrich Alexander University of Erlangen-Nuremberg, Cauerstr. 3, 91058 Erlangen, Germany.
| | - Julien Bachmann
- Chemistry of Thin Film Materials (CTFM), Interdisciplinary Center of Nanostructured Films (IZNF), Friedrich Alexander University of Erlangen-Nuremberg, Cauerstr. 3, 91058 Erlangen, Germany.
- Institute of Chemistry, Saint-Petersburg State University, Universitetskii pr. 26, St. Petersburg 198504, Russia
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14
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Ahmad S, Idrees M, Khan F, Nguyen C, Ahmad I, Amin B. Strain engineering of Janus ZrSSe and HfSSe monolayers and ZrSSe/HfSSe van der Waals heterostructure. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.138689] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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15
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Jin T, Zheng Y, Gao J, Wang Y, Li E, Chen H, Pan X, Lin M, Chen W. Controlling Native Oxidation of HfS 2 for 2D Materials Based Flash Memory and Artificial Synapse. ACS APPLIED MATERIALS & INTERFACES 2021; 13:10639-10649. [PMID: 33606512 DOI: 10.1021/acsami.0c22561] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) materials based artificial synapses are important building blocks for the brain-inspired computing systems that are promising in handling large amounts of informational data with high energy-efficiency in the future. However, 2D devices usually rely on deposited or transferred insulators as the dielectric layer, resulting in various challenges in device compatibility and fabrication complexity. Here, we demonstrate a controllable and reliable oxidation process to turn 2D semiconductor HfS2 into native oxide, HfOx, which shows good insulating property and clean interface with HfS2. We then incorporate the HfOx/HfS2 heterostructure into a flash memory device, achieving a high on/off current ratio of ∼105, a large memory window over 60 V, good endurance, and a long retention time over 103 seconds. In particular, the memory device can work as an artificial synapse to emulate basic synaptic functions and feature good linearity and symmetry in conductance change during long-term potentiation/depression processes. A simulated artificial neural network based on our synaptic device achieves a high accuracy of ∼88% in MNIST pattern recognition. Our work provides a simple and effective approach for integrating high-k dielectrics into 2D material-based memory and synaptic devices.
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Affiliation(s)
- Tengyu Jin
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Yue Zheng
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jing Gao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Yanan Wang
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Enlong Li
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, P. R. China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, P. R. China
| | - Xuan Pan
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Ming Lin
- Institute of Materials Research and Engineering (IMRE), Agency of Science, Technology, and Research (A*STAR), 2 Fusionopolis Way, #08-03, Innovis 138634, Singapore
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, P. R. China
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16
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Ghobadi N, Touski SB. The electrical and spin properties of monolayer and bilayer Janus HfSSe under vertical electrical field. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:085502. [PMID: 33202383 DOI: 10.1088/1361-648x/abcb12] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this paper, the electrical and spin properties of mono- and bilayer HfSSe in the presence of a vertical electric field are studied. The density functional theory is used to investigate their properties. Fifteen different stacking orders of bilayer HfSSe are considered. The mono- and bilayer demonstrate an indirect bandgap, whereas the bandgap of bilayer can be effectively controlled by the electric field. While the bandgap of bilayer closes at large electric fields and a semiconductor to metal transition occurs, the effect of a normal electric field on the bandgap of the monolayer HfSSe is quite weak. Spin-orbit coupling causes band splitting in the valence band and Rashba spin splitting in the conduction band of both mono- and bilayer structures. The band splitting in the valence band of the bilayer is smaller than a monolayer, however, the vertical electric field increases the band splitting in bilayer one. The stacking configurations without mirror symmetry exhibit Rashba spin splitting which is enhanced with the electric field.
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Affiliation(s)
- Nayereh Ghobadi
- Department of Electrical Engineering, University of Zanjan, Zanjan, Iran
| | - Shoeib Babaee Touski
- Department of Electrical Engineering, Hamedan University of Technology, Hamedan, Iran
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17
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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18
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A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS 2. NANOMATERIALS 2020; 10:nano10030446. [PMID: 32121550 PMCID: PMC7152995 DOI: 10.3390/nano10030446] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/29/2020] [Revised: 02/21/2020] [Accepted: 02/26/2020] [Indexed: 11/17/2022]
Abstract
We utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS2. We apply three different deformation modes within -10% to 30% range of two uniaxial (D1, D2) and one biaxial (D3) strains along x, y, and x-y directions, respectively. The harmonic regions are identified in each deformation mode. The ultimate stress for D1, D2, and D3 deformations is obtained as 0.037, 0.038 and 0.044 (eV/Ang3), respectively. Additionally, the ultimate strain for D1, D2, and D3 deformation is obtained as 17.2, 17.51, and 21.17 (eV/Ang3), respectively. In the next step, we determine the second-, third-, and fourth-order elastic constants and the electronic properties of both unstrained and strained HfS2 monolayers are investigated. Our findings reveal that the unstrained HfS2 monolayer is a semiconductor with an indirect bandgap of 1.12 eV. We then tune the bandgap of HfS2 with strain engineering. Our findings reveal how to tune and control the electronic properties of HfS2 monolayer with strain engineering, and make it a potential candidate for a wide range of applications including photovoltaics, electronics and optoelectronics.
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19
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Sun M, Hu H, Xie D, Sun Y, Xu J, Li W, Ren T, Zhu H. Gate stimulated high-performance MoS 2-In(OH) x Se phototransistor. NANOTECHNOLOGY 2020; 31:095203. [PMID: 31731285 DOI: 10.1088/1361-6528/ab5820] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) materials such as graphene and MoS2 have shown great potential in photodetection platforms. Photoresponsivity and photoresponse speed are two important parameters illustrating photodetector performances. Although various hybrid structures have been designed, the trade-off between photoresponsivity and photoresponse speed has not been well balanced. In this work, MoS2 film and In(OH) x Se nanoparticles are combined together to form the hybrid phototransistor. Utilizing both the photoconducting and photogating effects, the photoresponsivity increases about one order of magnitude with a value of 102 A W-1. The ratio of photocurrent and dark current increases to a value of 104. Considering the slow photo recovery speed, a 2 ms gate voltage pulse is applied after turning off the light, which results in a complete recovery of current. The photoconducting effect, photogating effect and gate voltage stimulation simultaneously promote the superior comprehensive photoresponse performances. This method can be further explored and utilized for realizing high performance photodetectors.
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Affiliation(s)
- Mengxing Sun
- Institute of Microelectronics & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, People's Republic of China
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20
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Yang X, Qin X, Luo J, Abbas N, Tang J, Li Y, Gu K. HfS 2/MoTe 2 vdW heterostructure: bandstructure and strain engineering based on first-principles calculation. RSC Adv 2020; 10:2615-2623. [PMID: 35496097 PMCID: PMC9048521 DOI: 10.1039/c9ra10087c] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2019] [Accepted: 12/20/2019] [Indexed: 02/04/2023] Open
Abstract
In this study, a multilayered van der Waals (vdW) heterostructure, HfS2/MoTe2, was modeled and simulated using density functional theory (DFT). It was found that the multilayers (up to 7 layers) are typical indirect bandgap semiconductors with an indirect band gap varying from 0.35 eV to 0.51 eV. The maximum energy value of the valence band (VBM) and the minimum energy value of the conduction band (CBM) of the heterostructure were found to be dominated by the MoTe2 layer and the HfS2 layer, respectively, characterized as type-II band alignment, leading to potential photovoltaic applications. Optical spectra analysis also revealed that the materials have strong absorption coefficients in the visible and ultraviolet regions, which can be used in the detection of visible and ultraviolet light. Under an external strain perpendicular to the layer plane, the heterostructure exhibits a general transition from semiconductor to metal at a critical interlayer-distance of 2.54 Å. The carrier effective mass and optical properties of the heterostructures can also be modulated under external strain, indicating a good piezoelectric effect in the heterostructure.
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Affiliation(s)
- Xinge Yang
- Shenzhen Key Laboratory of Advanced Functional Material, College of Material Science and Engineering, Shenzhen University Shenzhen Guangdong 518060 China
| | - Xiande Qin
- Shenzhen Key Laboratory of Advanced Functional Material, College of Material Science and Engineering, Shenzhen University Shenzhen Guangdong 518060 China
| | - Junxuan Luo
- Shenzhen Key Laboratory of Advanced Functional Material, College of Material Science and Engineering, Shenzhen University Shenzhen Guangdong 518060 China
| | - Nadeem Abbas
- Shenzhen Key Laboratory of Advanced Functional Material, College of Material Science and Engineering, Shenzhen University Shenzhen Guangdong 518060 China .,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University Shenzhen Guangdong 518060 China
| | - Jiaoning Tang
- Shenzhen Key Laboratory of Advanced Functional Material, College of Material Science and Engineering, Shenzhen University Shenzhen Guangdong 518060 China
| | - Yu Li
- Shenzhen Key Laboratory of Advanced Functional Material, College of Material Science and Engineering, Shenzhen University Shenzhen Guangdong 518060 China
| | - Kunming Gu
- Shenzhen Key Laboratory of Advanced Functional Material, College of Material Science and Engineering, Shenzhen University Shenzhen Guangdong 518060 China
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21
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Abstract
First principles density functional theory was used to study the energetic, structural, and electronic properties of HfS 2 and TiS 2 materials in their bulk, pristine monolayer, as well as in the monolayer structure with the adsorbed C, N, and P atoms. It is shown that the HfS 2 monolayer remains a semiconductor while TiS 2 changes from semiconductor to metallic behavior after the atomic adsorption. The interaction with the external atoms introduces localized levels inside the band gap of the pristine monolayers, significantly altering their electronic properties, with important consequences on the practical use of these materials in real devices. These results emphasize the importance of considering the interaction of these 2D materials with common external atomic or molecular species.
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22
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Sahoo PK, Memaran S, Nugera FA, Xin Y, Díaz Márquez T, Lu Z, Zheng W, Zhigadlo ND, Smirnov D, Balicas L, Gutiérrez HR. Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic Response. ACS NANO 2019; 13:12372-12384. [PMID: 31532628 DOI: 10.1021/acsnano.9b04957] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional lateral heterojunctions based on monolayer transition-metal dichalcogenides (TMDs) have received increasing attention given that their direct band gap makes them very attractive for optoelectronic applications. Although bilayer TMDs present an indirect band gap, their electrical properties are expected to be less susceptible to ambient conditions, with higher mobilities and density of states when compared to monolayers. Bilayers and few-layers single domain devices have already demonstrated higher performance in radio frequency and photosensing applications. Despite these advantages, lateral heterostructures based on bilayer domains have been less explored. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-WSe2 monodomains. The heterojunctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layers. A phenomenological mechanism is proposed to explain the growth mode with self-limited thickness that happens within a certain window of growth conditions. With respect to their as-grown monolayer counterparts, bilayer lateral heterostructures yield nearly 1 order of magnitude higher rectification currents. They also display a clear photovoltaic response, with short circuit currents ∼103 times larger than those extracted from the as-grown monolayers, in addition to room-temperature electroluminescence. The improved performance of bilayer heterostructures significantly expands the potential of two-dimensional materials for optoelectronics.
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Affiliation(s)
- Prasana Kumar Sahoo
- Department of Physics , University of South Florida , Tampa , Florida 33620 , United States
| | - Shahriar Memaran
- National High Magnetic Field Laboratory , Florida State University , Tallahassee , Florida 32310 , United States
- Department of Physics , Florida State University , Tallahassee , Florida 32306 , United States
| | - Florence Ann Nugera
- Department of Physics , University of South Florida , Tampa , Florida 33620 , United States
| | - Yan Xin
- National High Magnetic Field Laboratory , Florida State University , Tallahassee , Florida 32310 , United States
| | - Tania Díaz Márquez
- Department of Physics , University of South Florida , Tampa , Florida 33620 , United States
| | - Zhengguang Lu
- National High Magnetic Field Laboratory , Florida State University , Tallahassee , Florida 32310 , United States
- Department of Physics , Florida State University , Tallahassee , Florida 32306 , United States
| | - Wenkai Zheng
- National High Magnetic Field Laboratory , Florida State University , Tallahassee , Florida 32310 , United States
- Department of Physics , Florida State University , Tallahassee , Florida 32306 , United States
| | - Nikolai D Zhigadlo
- Department of Chemistry and Biochemistry , University of Bern , Bern 3012 , Switzerland
- CrystMat Company , Zurich 8046 , Switzerland
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory , Florida State University , Tallahassee , Florida 32310 , United States
- Department of Physics , Florida State University , Tallahassee , Florida 32306 , United States
| | - Luis Balicas
- National High Magnetic Field Laboratory , Florida State University , Tallahassee , Florida 32310 , United States
- Department of Physics , Florida State University , Tallahassee , Florida 32306 , United States
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23
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Xiao H, Liang T, Xu M. Growth of Ultraflat PbI 2 Nanoflakes by Solvent Evaporation Suppression for High-Performance UV Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1901767. [PMID: 31237757 DOI: 10.1002/smll.201901767] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2019] [Revised: 05/26/2019] [Indexed: 06/09/2023]
Abstract
2D lead iodide (PbI2 ) is attracting great interest due to its great potential in the application of UV photodetectors. In this work, a facile solution-based method is developed to synthesize ultraflat PbI2 nanoflakes for high-performance UV photodetectors. By maintaining at proximate room temperature and adding an evaporation suppression solvent for slow-rate crystal growth, high-quality PbI2 nanoflakes with an ultraflat surface are obtained. The UV photodetectors based on 2D PbI2 nanoflakes exhibit a high photoresponsivity of 0.51 A W-1 , a high detectivity of 4.0 × 1010 Jones, a high external quantum efficiency (EQE) of 168.9%, and a rapid response speed including a rise time of 14.1 ms and a decay time of 31.0 ms. The balanced and excellent photodetector performance of these devices paves the road for practical UV photodetection based on 2D PbI2 nanoflakes.
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Affiliation(s)
- Han Xiao
- College of Information Science and Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Tao Liang
- College of Information Science and Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
- Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Mingsheng Xu
- College of Information Science and Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
- College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, P. R. China
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Zhou J, Shen L, Costa MD, Persson KA, Ong SP, Huck P, Lu Y, Ma X, Chen Y, Tang H, Feng YP. 2DMatPedia, an open computational database of two-dimensional materials from top-down and bottom-up approaches. Sci Data 2019; 6:86. [PMID: 31189922 PMCID: PMC6561947 DOI: 10.1038/s41597-019-0097-3] [Citation(s) in RCA: 61] [Impact Index Per Article: 12.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2019] [Accepted: 05/07/2019] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional (2D) materials have been a hot research topic in the last decade, due to novel fundamental physics in the reduced dimension and appealing applications. Systematic discovery of functional 2D materials has been the focus of many studies. Here, we present a large dataset of 2D materials, with more than 6,000 monolayer structures, obtained from both top-down and bottom-up discovery procedures. First, we screened all bulk materials in the database of Materials Project for layered structures by a topology-based algorithm and theoretically exfoliated them into monolayers. Then, we generated new 2D materials by chemical substitution of elements in known 2D materials by others from the same group in the periodic table. The structural, electronic and energetic properties of these 2D materials are consistently calculated, to provide a starting point for further material screening, data mining, data analysis and artificial intelligence applications. We present the details of computational methodology, data record and technical validation of our publicly available data ( http://www.2dmatpedia.org/ ).
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Affiliation(s)
- Jun Zhou
- Department of Physics, National University of Singapore, Singapore, 117551, Singapore
| | - Lei Shen
- Department of Mechanical Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Miguel Dias Costa
- Centre for Advanced Two-dimensional Materials, National University of Singapore, Singapore, 117546, Singapore
| | - Kristin A Persson
- Department of Materials Science and Engineering, University of California Berkeley, California, 94720, USA
- Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Shyue Ping Ong
- Department of NanoEngineering, University of California San Diego, 9500 Gilman Drive, La Jolla, California, 92093, USA
| | - Patrick Huck
- Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Yunhao Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Xiaoyang Ma
- Department of Physics, National University of Singapore, Singapore, 117551, Singapore
| | - Yiming Chen
- Department of NanoEngineering, University of California San Diego, 9500 Gilman Drive, La Jolla, California, 92093, USA
| | - Hanmei Tang
- Department of NanoEngineering, University of California San Diego, 9500 Gilman Drive, La Jolla, California, 92093, USA
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, Singapore, 117551, Singapore.
- Centre for Advanced Two-dimensional Materials, National University of Singapore, Singapore, 117546, Singapore.
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Liang Q, Wang Q, Zhang Q, Wei J, Lim SX, Zhu R, Hu J, Wei W, Lee C, Sow C, Zhang W, Wee ATS. High-Performance, Room Temperature, Ultra-Broadband Photodetectors Based on Air-Stable PdSe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807609. [PMID: 31025440 DOI: 10.1002/adma.201807609] [Citation(s) in RCA: 91] [Impact Index Per Article: 18.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2018] [Revised: 03/31/2019] [Indexed: 05/12/2023]
Abstract
Photodetection over a broad spectral range is crucial for optoelectronic applications such as sensing, imaging, and communication. Herein, a high-performance ultra-broadband photodetector based on PdSe2 with unique pentagonal atomic structure is reported. The photodetector responds from visible to mid-infrared range (up to ≈4.05 µm), and operates stably in ambient and at room temperature. It promises improved applications compared to conventional mid-infrared photodetectors. The highest responsivity and external quantum efficiency achieved are 708 A W-1 and 82 700%, respectively, at the wavelength of 1064 nm. Efficient optical absorption beyond 8 µm is observed, indicating that the photodetection range can extend to longer than 4.05 µm. Owing to the low crystalline symmetry of layered PdSe2 , anisotropic properties of the photodetectors are observed. This emerging material shows potential for future infrared optoelectronics and novel devices in which anisotropic properties are desirable.
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Affiliation(s)
- Qijie Liang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
| | - Qixing Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
| | - Qian Zhang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Jingxuan Wei
- Department of Electrical and Computer Engineering, National University of, Singapore, 117583, Singapore
| | - Sharon Xiaodai Lim
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
| | - Rui Zhu
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
| | - Junxiong Hu
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
| | - Wei Wei
- Department of Electrical and Computer Engineering, National University of, Singapore, 117583, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of, Singapore, 117583, Singapore
| | - ChorngHaur Sow
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Block S14, 6 Science Drive 2, Singapore, 117546, Singapore
| | - Wenjing Zhang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Block S14, 6 Science Drive 2, Singapore, 117546, Singapore
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26
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Wang D, Lu Y, Meng J, Zhang X, Yin Z, Gao M, Wang Y, Cheng L, You J, Zhang J. Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride. NANOSCALE 2019; 11:9310-9318. [PMID: 31066419 DOI: 10.1039/c9nr01700c] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) heterostructures have attracted a great deal of attention due to their novel phenomena arising from the complementary properties of their constituent materials, and provide an ideal platform for exploring new fundamental research and realizing technological innovation. Here, for the first time, we report the formation of high quality HfS2/h-BN heterostructures by the remote heteroepitaxy technique, in which the large-area single-crystal HfS2 layers were epitaxially grown on c-plane sapphire through a polycrystalline h-BN layer via chemical vapor deposition. It is found that c-sapphire substrates can penetrate monolayer and bilayer h-BN to remotely handle the epitaxial growth of HfS2. Benefitting from the high crystal quality of HfS2 epilayers and the weak interface scattering of HfS2 on h-BN, the HfS2 photodetectors demonstrate excellent performance with a high on/off ratio exceeding 105, an excellent photoresponsivity up to 0.135 A W-1 and a high detectivity of over 1012 Jones. Furthermore, the HfS2/h-BN heterostructures prepared by the remote epitaxy can be rapidly released and transferred to a substrate of interest, which opens a new pathway for large-area advanced wearable electronics applications.
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Affiliation(s)
- Denggui Wang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
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Singh E, Singh P, Kim KS, Yeom GY, Nalwa HS. Flexible Molybdenum Disulfide (MoS 2) Atomic Layers for Wearable Electronics and Optoelectronics. ACS APPLIED MATERIALS & INTERFACES 2019; 11:11061-11105. [PMID: 30830744 DOI: 10.1021/acsami.8b19859] [Citation(s) in RCA: 88] [Impact Index Per Article: 17.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS2) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS2 atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS2 atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS2 FETs by integrating high-κ dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS2 device structures. The photoluminescence (PL) of MoS2 atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS2 transistors. The review discusses the overall recent progress made in developing MoS2 based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs.
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Affiliation(s)
- Eric Singh
- Department of Computer Science , Stanford University , Stanford , California 94305 , United States
| | - Pragya Singh
- Department of Electrical Engineering and Computer Science , National Chiao Tung University , Hsinchu 30010 , Taiwan , R.O.C
| | - Ki Seok Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu , Suwon-si , Gyeonggi-do 16419 , South Korea
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu , Suwon-si , Gyeonggi-do 16419 , South Korea
- SKKU Advanced Institute of Nano Technology , Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu , Suwon-si , Gyeonggi-do 16419 , South Korea
| | - Hari Singh Nalwa
- Advanced Technology Research , 26650 The Old Road, Suite 208 , Valencia , California 91381 , United States
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28
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Yue XF, Liang Y, Jiang J, Liu RG, Ren ST, Gao RX, Zhong B, Wen GW, Wang YY, Zou MQ. Raman intensity enhancement of molecules adsorbed onto HfS 2 flakes up to 200 layers. NANOSCALE 2019; 11:2179-2185. [PMID: 30346003 DOI: 10.1039/c8nr07185c] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Newly emerging two-dimensional transition metal dichalcogenide HfS2 has received considerable attention recently due to its ultrahigh photoresponsivity, well-balanced carrier mobility and an appropriate band gap which offer potential in electronic and optoelectronic devices. In this work, HfS2 flakes up to 200 layers with varying color contrasts are fabricated and transferred on a SiO2/Si substrate. The Raman intensities of HfS2 flakes and Raman intensities of molecules adsorbed on HfS2 flakes are quantitatively studied both theoretically and experimentally by considering an optical interference effect. The effects of the main experimental factors: thickness of SiO2 and excitation wavelength on Raman intensities are also theoretically investigated. Due to the low absorption of HfS2, many strong high-order interference-induced enhancement peaks are observed which are different from high absorption materials like graphene and MoS2, in which only 2-4 interference-induced enhancement peaks exist. Due to the environmental instability of single layer HfS2 under ambient conditions, multi-layer HfS2 is a better choice than single layer HfS2 as a Raman scattering substrate which has a stronger Raman enhancement and a better environmental stability. The discovery here will expand the application of HfS2 flakes in molecular detection.
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Affiliation(s)
- Xiao Fei Yue
- Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China.
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Xiang H, Xu B, Zhao W, Xia Y, Yin J, Zhang X, Liu Z. The magnetism of 1T-MX2 (M = Zr, Hf; X = S, Se) monolayers by hole doping. RSC Adv 2019; 9:13561-13566. [PMID: 35519557 PMCID: PMC9063905 DOI: 10.1039/c9ra01218d] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2019] [Accepted: 04/16/2019] [Indexed: 11/22/2022] Open
Abstract
The magnetism of hole doped 1T-MX2 (M = Zr, Hf; X = S, Se) monolayers is systematically studied by using first principles density functional calculations. The pristine 1T-MX2 monolayers are semiconductors with nonmagnetic ground states, which can be transformed to ferromagnetic states by the approach of hole doping. For the unstrained monolayers, the spontaneous magnetization appears once above the critical hole density (1014 cm−2), where the p orbital of S or Se atoms contributes the most of the magnetic moment. As the tensile strains exceed 4%, the magnetic moments per hole of ZrS2 and HfS2 monolayers increase sharply to a saturated value with increasing hole density, implying obvious advantages over the unstrained monolayers. The phonon dispersion calculations for the strained ZrS2 and HfS2 monolayers indicate that they can keep the dynamical stability by hole doping. Furthermore, we propose that the fluorine atom modified ZrS2 monolayer could obtain stable ferromagnetism. The magnetism in hole doped 1T-MX2 (M = Zr, Hf; X = S, Se) monolayers has great potential for developing spintronic devices with desirable applications. The magnetism of zirconium and hafnium dichalcogenides by hole doping is studied by using first principles calculations.![]()
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Affiliation(s)
- Hui Xiang
- School of Mathematics and Physics
- Hubei Polytechnic University
- Huangshi
- China
- National Laboratory of Solid State Microstructures
| | - Bo Xu
- School of Sciences
- Key Laboratory of Biomedical Functional Materials
- China Pharmaceutical University
- Nanjing
- China
| | - Weiqian Zhao
- School of Mathematics and Physics
- Hubei Polytechnic University
- Huangshi
- China
| | - Yidong Xia
- National Laboratory of Solid State Microstructures
- Department of Materials Science and Engineering
- Nanjing University
- Nanjing
- China
| | - Jiang Yin
- National Laboratory of Solid State Microstructures
- Department of Materials Science and Engineering
- Nanjing University
- Nanjing
- China
| | - Xiaofei Zhang
- School of Mathematics and Physics
- Hubei Polytechnic University
- Huangshi
- China
| | - Zhiguo Liu
- National Laboratory of Solid State Microstructures
- Department of Materials Science and Engineering
- Nanjing University
- Nanjing
- China
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30
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Xie Y, Liang F, Wang D, Chi S, Yu H, Lin Z, Zhang H, Chen Y, Wang J, Wu Y. Room-Temperature Ultrabroadband Photodetection with MoS 2 by Electronic-Structure Engineering Strategy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1804858. [PMID: 30311283 DOI: 10.1002/adma.201804858] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2018] [Revised: 09/09/2018] [Indexed: 06/08/2023]
Abstract
Photodetection using semiconductors is critical for capture, identification, and processing of optical information. Nowadays, broadband photodetection is limited by the underdeveloped mid-IR photodetection at room temperature (RT), primarily as a result of the large dark currents unavoidably generated by the Fermi-Dirac distribution in narrow-bandgap semiconductors, which constrains the development of some modern technologies and systems. Here, an electronic-structure strategy is proposed for designing ultrabroadband covering mid- and even far-IR photodetection materials operating at RT and a layered MoS2 is manifested with an engineered bandgap of 0.13 eV and modulated electronic state density. The sample is designed by introducing defect energy levels into layered MoS2 and its RT photodetection is demonstrated for wavelengths from 445 nm to 9.5 µm with an electronic state density-dependent peak photoresponsivity of 21.8 mA W-1 in the mid-IR region, the highest value among all known photodetectors. This material should be a promising candidate for modern optoelectronic devices and offers inspiration for the design of other optoelectronic materials.
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Affiliation(s)
- Ying Xie
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Fei Liang
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Dong Wang
- School of Physics, Shandong University, Jinan, 250100, China
| | - Shumeng Chi
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Haohai Yu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zheshuai Lin
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Huaijin Zhang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Yanxue Chen
- School of Physics, Shandong University, Jinan, 250100, China
| | - Jiyang Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Yicheng Wu
- Institute of Functional Crystal Materials, Tianjin University of Technology, Tianjin, 300384, China
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31
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Wang D, Zhang X, Guo G, Gao S, Li X, Meng J, Yin Z, Liu H, Gao M, Cheng L, You J, Wang R. Large-Area Synthesis of Layered HfS 2(1- x )Se 2 x Alloys with Fully Tunable Chemical Compositions and Bandgaps. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1803285. [PMID: 30589474 DOI: 10.1002/adma.201803285] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2018] [Revised: 07/19/2018] [Indexed: 06/09/2023]
Abstract
Alloying transition metal dichalcogenides (TMDs) with different compositions is demonstrated as an effective way to acquire 2D semiconductors with widely tunable bandgaps. Herein, for the first time, the large-area synthesis of layered HfS2(1- x )Se2 x alloys with fully tunable chemical compositions on sapphire by chemical vapor deposition is reported, greatly expanding and enriching the family of 2D TMDs semiconductors. The configuration and high quality of their crystal structure are confirmed by various characterization techniques, and the bandgap of these alloys can be continually modulated from 2.64 to 1.94 eV with composition variations. Furthermore, prototype HfS2(1- x )Se2 x photodetectors with different Se compositions are fabricated, and the HfSe2 photodetector manifests the best performance among all the tested HfS2(1- x )Se2 x devices. Remarkably, by introducing a hexagonal boron nitride layer, the performance of the HfSe2 photodetector is greatly improved, exhibiting a high on/off ratio exceeding 105, an ultrafast response time of about 190 µs, and a high detectivity of 1012 Jones. This simple and controllable approach opens up a new way to produce high-quality 2D HfS2(1- x )Se2 x layers, which are highly qualified candidates for the next-generation application in high-performance optoelectronics.
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Affiliation(s)
- Denggui Wang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Gencai Guo
- College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Shihan Gao
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xingxing Li
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junhua Meng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhigang Yin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Heng Liu
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Menglei Gao
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Likun Cheng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jingbi You
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Ruzhi Wang
- College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
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32
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Lai S, Byeon S, Jang SK, Lee J, Lee BH, Park JH, Kim YH, Lee S. HfO 2/HfS 2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS 2. NANOSCALE 2018; 10:18758-18766. [PMID: 30276384 DOI: 10.1039/c8nr06020g] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
While preparing uniform dielectric layers on two-dimensional (2D) materials is a key device architecture requirement to achieve next-generation 2D devices, conventional deposition or transfer approaches have been so far limited by their high cost, fabrication complexity, and especially poor dielectric/2D material interface quality. Here, we demonstrate that HfO2, a high-K dielectric, can be prepared on the top surface of 2D HfS2 through plasma oxidation, which results in a heterostructure composed of a 2D van der Waals semiconductor and its insulating native oxide. A highly uniform dielectric layer with a controlled thickness can be prepared; the possibility of unlimited layer-by-layer oxidation further differentiates our work from previous attempts on other 2D semiconducting materials, which exhibit self-limited oxidation up to only a few layers. High resolution transmission electron microscopy was used to show that the converted HfO2/HfS2 hybrid structure is of high quality with an atomically abrupt, impurity- and defect-free interface. Density functional theory calculations show that the unlimited layer-by-layer oxidation occurs because oxygen atoms can barrierlessly penetrate into the HfS2 surface and the extracted sulfur atoms are absorbed into the oxygen vacancy sites within HfO2 under O-rich conditions. A top-gated field-effect transistor fabricated with the converted HfO2/HfS2 hybrid structure was found to exhibit a low interface trap density Dit of 6 × 1011 cm-2 eV-1 between the HfS2 channel and the converted HfO2 dielectric, and a high on/off current ratio above 107. Our approach provides a low cost, simple, and ultraclean manufacturing technique for integrating 2D material into device applications.
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Affiliation(s)
- Shen Lai
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
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33
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Fang N, Nagashio K. Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule. ACS APPLIED MATERIALS & INTERFACES 2018; 10:32355-32364. [PMID: 30146878 DOI: 10.1021/acsami.8b10687] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics. The existing Schottky barrier FET model for devices with global back gate and metallic contacts overemphasizes the metal/2D contact effect, and the widely observed residual conductance cannot be explained by this model. Here, an accumulation-mode (ACCU) FET model, which directly reveals 2D channel transport properties, is developed based on a partial top-gate MoS2 FET with metallic contacts and a channel thickness of 0.65-118 nm. The operation mechanism of an ACCU-FET is validated and clarified by carefully performed capacitance measurements. A depletion capacitance-quantum capacitance transition is observed. After the analysis of the MoS2 ACCU-FET, we have confirmed that most 2D FETs show an accumulation-mode behavior. The universal thickness scaling rule of 2D-FETs is then proposed, which provides guidance for future research on 2D materials.
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Affiliation(s)
- Nan Fang
- Department of Materials Engineering , The University of Tokyo , Tokyo 113-8656 , Japan
| | - Kosuke Nagashio
- Department of Materials Engineering , The University of Tokyo , Tokyo 113-8656 , Japan
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Ma Y, Ajayan PM, Yang S, Gong Y. Recent Advances in Synthesis and Applications of 2D Junctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1801606. [PMID: 30073751 DOI: 10.1002/smll.201801606] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2018] [Revised: 06/15/2018] [Indexed: 06/08/2023]
Abstract
Recent progress in the methods of integration of 2D materials is reviewed. Integrated 2D circuits are one of the most promising candidates for advanced electronics and flexible devices. Specifically, methods such as mechanical transfer, chemical vapor deposition growth, high temperature conversion, phase engineering, surface doping, electrostatic doping, and so on to fabricate 2D heterostructures are discussed in detail. Applications of these integrated 2D heterostructures in p-n junctions, ohmic contact, high-performance transistors, and phototransistors are also highlighted. Finally, challenges and opportunities of methods to integrate 2D materials are proposed.
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Affiliation(s)
- Yang Ma
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Shubin Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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35
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High-pressure Raman scattering in bulk HfS 2: comparison of density functional theory methods in layered MS 2 compounds (M = Hf, Mo) under compression. Sci Rep 2018; 8:12757. [PMID: 30143712 PMCID: PMC6109144 DOI: 10.1038/s41598-018-31051-y] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2018] [Accepted: 08/07/2018] [Indexed: 11/08/2022] Open
Abstract
We report high-pressure Raman-scattering measurements on the transition-metal dichalcogenide (TMDC) compound HfS2. The aim of this work is twofold: (i) to investigate the high-pressure behavior of the zone-center optical phonon modes of HfS2 and experimentally determine the linear pressure coefficients and mode Grüneisen parameters of this material; (ii) to test the validity of different density functional theory (DFT) approaches in order to predict the lattice-dynamical properties of HfS2 under pressure. For this purpose, the experimental results are compared with the results of DFT calculations performed with different functionals, with and without Van der Waals (vdW) interaction. We find that DFT calculations within the generalized gradient approximation (GGA) properly describe the high-pressure lattice dynamics of HfS2 when vdW interactions are taken into account. In contrast, we show that DFT within the local density approximation (LDA), which is widely used to predict structural and vibrational properties at ambient conditions in 2D compounds, fails to reproduce the behavior of HfS2 under compression. Similar conclusions are reached in the case of MoS2. This suggests that large errors may be introduced if the compressibility and Grüneisen parameters of bulk TMDCs are calculated with bare DFT-LDA. Therefore, the validity of different approaches to calculate the structural and vibrational properties of bulk and few-layered vdW materials under compression should be carefully assessed.
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36
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Liu Y, Duan X, Huang Y, Duan X. Two-dimensional transistors beyond graphene and TMDCs. Chem Soc Rev 2018; 47:6388-6409. [PMID: 30079920 DOI: 10.1039/c8cs00318a] [Citation(s) in RCA: 125] [Impact Index Per Article: 20.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Two-dimensional semiconductors (2DSCs) have attracted considerable attention as atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of a single- or few-atom-thick, covalently bonded lattice, in which all carriers are confined in their atomically thin channel with superior gate controllability and greatly suppressed OFF-state current, in contrast to typical bulk semiconductors plagued by short channel effects and heat generation from static power. Additionally, 2DSCs are free of surface dangling bonds that plague traditional semiconductors, and hence exhibit excellent electronic properties at the limit of single atom thickness. Therefore, 2DSCs can offer significant potential for the ultimate transistor scaling to single atomic body thickness. Earlier studies of graphene transistors have been limited by the zero bandgap and low ON-OFF ratio of graphene, and transition metal dichalcogenide (TMDC) devices are typically plagued by insufficient carrier mobility. To this end, considerable efforts have been devoted towards searching for new 2DSCs with optimum electronic properties. Within a relatively short period of time, a large number of 2DSCs have been demonstrated to exhibit unprecedented characteristics or unique functionalities. Here we review the recent efforts and progress in exploring novel 2DSCs beyond graphene and TMDCs for ultra-thin body transistors, discussing the merits, limits and prospects of each material.
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Affiliation(s)
- Yuan Liu
- State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China.
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Kim KK, Lee HS, Lee YH. Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics. Chem Soc Rev 2018; 47:6342-6369. [PMID: 30043784 DOI: 10.1039/c8cs00450a] [Citation(s) in RCA: 84] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Among two dimensional (2D) van der Waals (vdW) layered materials such as graphene, which is used like a metal, and transition metal chalcogenides (TMdCs), which are used as semiconductors and metals, hexagonal boron nitride (hBN), which is used as an insulator, is ubiquitous as a building block to construct 2D vdW electronics for versatile tunneling devices. Monolayer and few-layer hBN films have been prepared with flake sizes of a few hundred micrometer via mechanical exfoliation and transfer methods. Another approach used to synthesize hBN films on a large scale is chemical vapor deposition (CVD). Although the single-crystal film growth of hBN on the wafer scale is the key to realizing realistic electronic applications, the various functionalities of hBN for 2D electronics are mostly limited to the microscale. Here, we review the recent progress for the large-area synthesis of hBN and other related vdW heterostructures via CVD, and the artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistances. The challenges and future perspectives for practical applications are also addressed.
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Affiliation(s)
- Ki Kang Kim
- Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul, 04320, Republic of Korea.
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38
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Zhang SH, Liu BG. Superior ionic and electronic properties of ReN 2 monolayers for Na-ion battery electrodes. NANOTECHNOLOGY 2018; 29:325401. [PMID: 29790854 DOI: 10.1088/1361-6528/aac73b] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Excellent monolayer electrode materials can be used to design high-performance alkali-metal-ion batteries. Here, we propose two-dimensional ReN2 monolayers as superior sodium-ion battery materials. Our total energy optimization results in a buckled tetragonal structure for the ReN2 monolayer, and our phonon spectrum and elastic moduli prove that it is dynamically and mechanically stable. Further investigations show that it is metallic and still keeps its metallic feature after the adsorption of Na or K atoms, and the adsorption of Na (or K) atoms changes the lattice parameters by 3.2% (or 3.8%) at most. Its maximum capacity reaches 751 mA h g-1 for Na-ion batteries or 250 mA h g-1 for K-ion batteries, and the diffusion barrier is only 0.027 eV for the Na atom or 0.127 eV for the K atom. The small lattice changes, high storage capacity, metallic feature, and extremely low ion diffusion barriers make the ReN2 monolayers a superior electrode material for Na-ion rechargeable batteries with ultrafast charging/discharging processes.
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Affiliation(s)
- Shi-Hao Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
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De Sanctis A, Amit I, Hepplestone SP, Craciun MF, Russo S. Strain-engineered inverse charge-funnelling in layered semiconductors. Nat Commun 2018; 9:1652. [PMID: 29695714 PMCID: PMC5916941 DOI: 10.1038/s41467-018-04099-7] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2018] [Accepted: 04/04/2018] [Indexed: 11/10/2022] Open
Abstract
The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications. Conversely, the ability to grow clean interfaces between materials has been a stepping stone for engineering built-in electric fields largely exploited in modern photovoltaics and opto-electronics. The emergence of atomically thin semiconductors is now enabling new ways to attain electric fields and unveil novel charge transport mechanisms. Here, we report the first direct electrical observation of the inverse charge-funnel effect enabled by deterministic and spatially resolved strain-induced electric fields in a thin sheet of HfS2. We demonstrate that charges driven by these spatially varying electric fields in the channel of a phototransistor lead to a 350% enhancement in the responsivity. These findings could enable the informed design of highly efficient photovoltaic cells. The application of strain to semiconducting materials can be used to engineer electric fields through a varying energy gap. Here, the authors observe an inverse charge-funnel effect in atomically thin HfS2, enabled by strain-induced electric fields.
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Affiliation(s)
- Adolfo De Sanctis
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, UK.
| | - Iddo Amit
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, UK
| | - Steven P Hepplestone
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, UK
| | - Monica F Craciun
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, UK
| | - Saverio Russo
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, UK.
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Fang X, Wei P, Wang L, Wang X, Chen B, He Q, Yue Q, Zhang J, Zhao W, Wang J, Lu G, Zhang H, Huang W, Huang X, Li H. Transforming Monolayer Transition-Metal Dichalcogenide Nanosheets into One-Dimensional Nanoscrolls with High Photosensitivity. ACS APPLIED MATERIALS & INTERFACES 2018; 10:13011-13018. [PMID: 29600705 DOI: 10.1021/acsami.8b01856] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
One-dimensional (1D) nanoscrolls derived from two-dimensional (2D) nanosheets own unusual physical and chemical properties that arise from the spiraled 1D morphology and the atomic thin 2D building blocks. Unfortunately, preparation of large-sized nanoscrolls of transition-metal dichalcogenides (TMDCs) remains a big challenge, which greatly restricts the fabrication of single-scroll devices for their fundamental studies and further applications. In this work, we report a universal and facile method, by making use of the evaporation process of volatile organic solvent, to prepare TMDC (e.g., MoS2 and WS2) nanoscrolls with lengths of several tens to one hundred micrometers from their 2D precursors presynthesized by chemical vapor deposition on Si/SiO2. Both atomic force microscopy and electron microscopy characterizations confirmed the spirally rolledup structure in the resulting nanoscrolls. An interlayer spacing of as small as ∼0.65 nm was observed, suggesting the strong coupling between adjacent layers, which was further evidenced by the emergence of new breathing mode peaks in the ultralow frequency Raman spectrum. Importantly, compared with the photodetector fabricated from a monolayer MoS2 or WS2 nanosheet, the device based on an MoS2 or WS2 nanoscroll showed the much enhanced performance, respectively, with the photosensitivity greatly increased up to 2 orders of magnitude. Our work suggests that turning 2D TMDCs into 1D scrolls is promising in achieving high performances in various electronic/optoelectronic applications, and our general method can be extended to the preparation of large-sized nanoscrolls of other kinds of 2D materials that may bring about new properties and phenomena.
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Affiliation(s)
- Xiangru Fang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
| | - Pei Wei
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
| | - Xiaoshan Wang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
| | - Bo Chen
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore
| | - Qiyuan He
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore
| | - Qiuyan Yue
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
| | - Jindong Zhang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
| | - Weihao Zhao
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
| | - Jialiang Wang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
| | - Gang Lu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
| | - Hua Zhang
- Center for Programmable Materials, School of Materials Science and Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798 , Singapore
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
- Shaanxi Institute of Flexible Electronics (SIFE) , Northwestern Polytechnical University (NPU) , 127 West Youyi Road , Xi'an 710072 , P. R. China
| | - Xiao Huang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
| | - Hai Li
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , P. R. China
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41
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Wu JB, Lin ML, Cong X, Liu HN, Tan PH. Raman spectroscopy of graphene-based materials and its applications in related devices. Chem Soc Rev 2018; 47:1822-1873. [PMID: 29368764 DOI: 10.1039/c6cs00915h] [Citation(s) in RCA: 512] [Impact Index Per Article: 85.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Graphene-based materials exhibit remarkable electronic, optical, and mechanical properties, which has resulted in both high scientific interest and huge potential for a variety of applications. Furthermore, the family of graphene-based materials is growing because of developments in preparation methods. Raman spectroscopy is a versatile tool to identify and characterize the chemical and physical properties of these materials, both at the laboratory and mass-production scale. This technique is so important that most of the papers published concerning these materials contain at least one Raman spectrum. Thus, here, we systematically review the developments in Raman spectroscopy of graphene-based materials from both fundamental research and practical (i.e., device applications) perspectives. We describe the essential Raman scattering processes of the entire first- and second-order modes in intrinsic graphene. Furthermore, the shear, layer-breathing, G and 2D modes of multilayer graphene with different stacking orders are discussed. Techniques to determine the number of graphene layers, to probe resonance Raman spectra of monolayer and multilayer graphenes and to obtain Raman images of graphene-based materials are also presented. The extensive capabilities of Raman spectroscopy for the investigation of the fundamental properties of graphene under external perturbations are described, which have also been extended to other graphene-based materials, such as graphene quantum dots, carbon dots, graphene oxide, nanoribbons, chemical vapor deposition-grown and SiC epitaxially grown graphene flakes, composites, and graphene-based van der Waals heterostructures. These fundamental properties have been used to probe the states, effects, and mechanisms of graphene materials present in the related heterostructures and devices. We hope that this review will be beneficial in all the aspects of graphene investigations, from basic research to material synthesis and device applications.
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Affiliation(s)
- Jiang-Bin Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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42
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Wang F, Wang Z, Yin L, Cheng R, Wang J, Wen Y, Shifa TA, Wang F, Zhang Y, Zhan X, He J. 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection. Chem Soc Rev 2018; 47:6296-6341. [DOI: 10.1039/c8cs00255j] [Citation(s) in RCA: 156] [Impact Index Per Article: 26.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Two-dimensional materials beyond graphene and TMDs can be promising candidates for wide-spectra photodetection.
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43
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Yang R, Feng S, Xiang J, Jia Z, Mu C, Wen F, Liu Z. Ultrahigh-Gain and Fast Photodetectors Built on Atomically Thin Bilayer Tungsten Disulfide Grown by Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2017; 9:42001-42010. [PMID: 29119781 DOI: 10.1021/acsami.7b14853] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The low responsivity observed in photodetectors based on monolayer transition-metal dichalcogenides has encouraged the pursuit of approaches that can efficiently enhance the external quantum efficiency, which relies predominantly on the light absorption, the lifetime of the excess carriers, and the charge collection efficiency. Here, we demonstrate that phototransistors fabricated on large-area bilayer tungsten disulfide (WS2) grown by chemical vapor deposition exhibit remarkable performance with photoresponsivity, photogain, and detectivity of up to ∼3 × 103 A/W, 1.4 × 104, and ∼5 × 1012 Jones, respectively. These figures of merit of bilayer WS2 provide a significant advantage over monolayer WS2 due to the greatly improved carrier mobility and significantly reduced contact resistance. The photoresponsivity of bilayer WS2 phototransistor can be further improved to up to 1 × 104 A/W upon biasing a gate voltage of 60 V, without evident reduction in detectivity. Moreover, the bilayer WS2 phototransistor exhibits a high response speed of less than 100 μs, large bandwidth of 4 kHz, high cycling reliability of over 105 cycles, and spatially homogeneous photoresponse. These outstanding figures of merit make WS2 bilayer a highly promising candidate for the design of high-performance optoelectronics in the visible regime.
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Affiliation(s)
| | | | - Jianyong Xiang
- Key Laboratory of Low Dimensional Quantum Structures and Quantum Control of Ministry of Education, Hunan Normal University , Changsha 410081, People's Republic of China
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Tan M, Hu C, Lan Y, Khan J, Deng H, Yang X, Wang P, Yu X, Lai J, Song H. 2D Lead Dihalides for High-Performance Ultraviolet Photodetectors and their Detection Mechanism Investigation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1702024. [PMID: 29106073 DOI: 10.1002/smll.201702024] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2017] [Revised: 08/20/2017] [Indexed: 05/20/2023]
Abstract
2D halide semiconductors, a new family of 2D materials in addition to transition metal dichalcogenides, present ultralow dark current and high light conversion yield, which hold great potential in photoconductive detectors. Herein, a facile aqueous solution method is developed for the preparation of large-scale 2D lead dihalide nanosheets (PbF2-x Ix ). High-performance UV photodetectors are successfully implemented based on 2D PbF2-x Ix nanosheets. By modulating the components of halogens, the bandgap of PbF2-x Ix nanosheets can be tuned to meet varied detection spectra. The photoresponse dependence on incident power density, wavelength, detection environment, and temperature are systematically studied to investigate their detection mechanism. For PbI2 photodetectors, they are dominantly driven by a photoconduction mechanism and show a fast response speed and a low noise current density. A high normalized detectivity of 1.5 × 1012 Jones and an ION /IOFF ratio up to 103 are reached. On the other hand, PbFI photodetectors demonstrate a photogating mechanism mediated by trap states showing high responsivity. The novel 2D halide materials with wide bandgaps, superior detection performance, and facile synthesis process can enrich the Van der Waals solids family and hold great potential for a wide variety of applications in advanced optoelectronics.
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Affiliation(s)
- Manlin Tan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
- Research Institute of Tsinghua University in Shenzhen, Shenzhen, 518057, China
| | - Chao Hu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Yang Lan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Jahangeer Khan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Hui Deng
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xiaokun Yang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Peixiang Wang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xiangxiang Yu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Jianjun Lai
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
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Wang F, Wang Z, Jiang C, Yin L, Cheng R, Zhan X, Xu K, Wang F, Zhang Y, He J. Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1604298. [PMID: 28594452 DOI: 10.1002/smll.201604298] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2016] [Revised: 02/13/2017] [Indexed: 06/07/2023]
Abstract
2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future.
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Affiliation(s)
- Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Chao Jiang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory for Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Lei Yin
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruiqing Cheng
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xueying Zhan
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Kai Xu
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fengmei Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yu Zhang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
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Fu L, Wang F, Wu B, Wu N, Huang W, Wang H, Jin C, Zhuang L, He J, Fu L, Liu Y. Van der Waals Epitaxial Growth of Atomic Layered HfS 2 Crystals for Ultrasensitive Near-Infrared Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1700439. [PMID: 28639401 DOI: 10.1002/adma.201700439] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2017] [Revised: 04/18/2017] [Indexed: 05/25/2023]
Abstract
As a member of the group IVB transition metal dichalcogenides (TMDs) family, hafnium disulfide (HfS2 ) is recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high-quality HfS2 crystals, sparsely reported, has greatly hindered the development of this new field. Here, a facile strategy for controlled synthesis of high-quality atomic layered HfS2 crystals by van der Waals epitaxy is reported. Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S-edge and Hf-edge. Impressively, the HfS2 back-gate field-effect transistors display a competitive mobility of 7.6 cm2 V-1 s-1 and an ultrahigh on/off ratio exceeding 108 . Meanwhile, ultrasensitive near-infrared phototransistors based on the HfS2 crystals (indirect bandgap ≈1.45 eV) exhibit an ultrahigh responsivity exceeding 3.08 × 105 A W-1 , which is 109 -fold higher than 9 × 10-5 A W-1 obtained from the multilayer MoS2 in near-infrared photodetection. Moreover, an ultrahigh photogain exceeding 4.72 × 105 and an ultrahigh detectivity exceeding 4.01 × 1012 Jones, superior to the vast majority of the reported 2D-materials-based phototransistors, imply a great promise in TMD-based 2D electronic and optoelectronic applications.
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Affiliation(s)
- Lei Fu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Science, Beijing, 100190, P. R. China
- College of Chemistry and Molecular Science, Wuhan University, Wuhan, 430072, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Nian Wu
- College of Chemistry and Molecular Science, Wuhan University, Wuhan, 430072, P. R. China
| | - Wei Huang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China
| | - Hanlin Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China
| | - Lin Zhuang
- College of Chemistry and Molecular Science, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Lei Fu
- College of Chemistry and Molecular Science, Wuhan University, Wuhan, 430072, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Science, Beijing, 100190, P. R. China
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Li H, Li Y, Aljarb A, Shi Y, Li LJ. Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability. Chem Rev 2017; 118:6134-6150. [DOI: 10.1021/acs.chemrev.7b00212] [Citation(s) in RCA: 225] [Impact Index Per Article: 32.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Henan Li
- College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China
| | - Ying Li
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Areej Aljarb
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Yumeng Shi
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Lain-Jong Li
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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Peng J, Wu J, Li X, Zhou Y, Yu Z, Guo Y, Wu J, Lin Y, Li Z, Wu X, Wu C, Xie Y. Very Large-Sized Transition Metal Dichalcogenides Monolayers from Fast Exfoliation by Manual Shaking. J Am Chem Soc 2017; 139:9019-9025. [DOI: 10.1021/jacs.7b04332] [Citation(s) in RCA: 83] [Impact Index Per Article: 11.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Affiliation(s)
- Jing Peng
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Jiajing Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Xiaoting Li
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
- CAS Key Lab of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Yuan Zhou
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Zhi Yu
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Yuqiao Guo
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Junchi Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Yue Lin
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Zejun Li
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Xiaojun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
- CAS Key Lab of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Changzheng Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei 230026, P.R. China
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Scaling trends and performance evaluation of 2-dimensional polarity-controllable FETs. Sci Rep 2017; 7:45556. [PMID: 28358019 PMCID: PMC5372079 DOI: 10.1038/srep45556] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2016] [Accepted: 02/27/2017] [Indexed: 11/10/2022] Open
Abstract
Two-dimensional semiconducting materials of the transition-metal-dichalcogenide family, such as MoS2 and WSe2, have been intensively investigated in the past few years, and are considered as viable candidates for next-generation electronic devices. In this paper, for the first time, we study scaling trends and evaluate the performances of polarity-controllable devices realized with undoped mono- and bi-layer 2D materials. Using ballistic self-consistent quantum simulations, it is shown that, with the suitable channel material, such polarity-controllable technology can scale down to 5 nm gate lengths, while showing performances comparable to the ones of unipolar, physically-doped 2D electronic devices.
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Kang M, Rathi S, Lee I, Li L, Khan MA, Lim D, Lee Y, Park J, Yun SJ, Youn DH, Jun C, Kim GH. Tunable electrical properties of multilayer HfSe 2 field effect transistors by oxygen plasma treatment. NANOSCALE 2017; 9:1645-1652. [PMID: 28074961 DOI: 10.1039/c6nr08467b] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
HfSe2 field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe2 field effect transistors showed a high on/off ratio improvement of four orders of magnitude, from 27 to 105, a field effect mobility increase from 2.16 to 3.04 cm2 V-1 s-1, a subthreshold swing improvement from 30.6 to 4.8 V dec-1, and a positive threshold voltage shift between depletion mode and enhancement mode, from -7.02 to 11.5 V. The plasma-treated HfSe2 photodetector also demonstrates a reasonable photoresponsivity from the visible to the near-infrared region of light.
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Affiliation(s)
- Moonshik Kang
- College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. and Manufacturing Engineering Team, Memory Division, Samsung Electronics Co., Hwasung 18448, Republic of Korea
| | - Servin Rathi
- College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.
| | - Inyeal Lee
- College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.
| | - Lijun Li
- College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.
| | - Muhammad Atif Khan
- College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.
| | - Dongsuk Lim
- College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.
| | - Yoontae Lee
- College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.
| | - Jinwoo Park
- College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.
| | - Sun Jin Yun
- ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
| | - Doo-Hyeb Youn
- ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
| | - Chungsam Jun
- Manufacturing Engineering Team, Memory Division, Samsung Electronics Co., Hwasung 18448, Republic of Korea
| | - Gil-Ho Kim
- College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.
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