1
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Tao Y, Guo Z, Li S, Yang L, Jin F, You L, Tang R, Dong K. Wide Linearity Range 3D Magnetic Sensor and Angular Position Detector Based on a Single FePt Spin-Orbit Torque Device. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27917-27925. [PMID: 38744687 DOI: 10.1021/acsami.4c02874] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
Three-dimensional (3D) vector magnetic sensors play a significant role in a variety of industries, especially in the automotive industry, which enables the control of precise position, angle, and rotation of motion elements. Traditional 3D magnetic sensors integrate multiple sensors with their sensing orientations along the three coordinate axes, leading to a large size and inevitable nonorthogonal misalignment. Here, we demonstrate a wide linearity range 3D magnetic sensor utilizing a single L10-FePt Hall-bar device, whose sensitivity is 291 VA-1 T-1 in the z-axis and 27 VA-1 T-1 in the in-plane axis. Based on the spin-orbit torque-dominated magnetization reversal, the linear response of anomalous Hall resistance within a large linear range (±200 Oe) for the x, y, and z components of magnetic fields has been obtained, respectively. Typically, it exhibits a relatively lower magnetic noise level of 7.9 nV at 1 Hz than previous results, improving measurement resolution at the low frequency. Furthermore, we provide a straightforward approach for noncontact angular position detection based on a single Hall-bar device, which shows great potential for application in rotational motion control.
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Affiliation(s)
- Ying Tao
- School of Automation, China University of Geosciences, Wuhan 430074, China
- Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Zhe Guo
- School of Microelectronics, Hubei University, Wuhan 430062, China
| | - Shihao Li
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Liu Yang
- School of Automation, China University of Geosciences, Wuhan 430074, China
- Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Fang Jin
- School of Automation, China University of Geosciences, Wuhan 430074, China
- Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Long You
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Rujun Tang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Kaifeng Dong
- School of Automation, China University of Geosciences, Wuhan 430074, China
- Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
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2
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Zhang H, Chen X, Wang T, Huang X, Chen X, Shao YT, Meng F, Meisenheimer P, N'Diaye A, Klewe C, Shafer P, Pan H, Jia Y, Crommie MF, Martin LW, Yao J, Qiu Z, Muller DA, Birgeneau RJ, Ramesh R. Room-Temperature, Current-Induced Magnetization Self-Switching in A Van Der Waals Ferromagnet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308555. [PMID: 38016700 DOI: 10.1002/adma.202308555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2023] [Revised: 10/30/2023] [Indexed: 11/30/2023]
Abstract
2D layered materials with broken inversion symmetry are being extensively pursued as spin source layers to realize high-efficiency magnetic switching. Such low-symmetry layered systems are, however, scarce. In addition, most layered magnets with perpendicular magnetic anisotropy show a low Curie temperature. Here, the experimental observation of spin-orbit torque magnetization self-switching at room temperature in a layered polar ferromagnetic metal, Fe2.5 Co2.5 GeTe2 is reported. The spin-orbit torque is generated from the broken inversion symmetry along the c-axis of the crystal. These results provide a direct pathway toward applicable 2D spintronic devices.
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Affiliation(s)
- Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Xiang Chen
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Tianye Wang
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Xianzhe Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yu-Tsun Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
| | - Fanhao Meng
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Alpha N'Diaye
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Christoph Klewe
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Hao Pan
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Yanli Jia
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Michael F Crommie
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Departments of Materials Science and NanoEngineering, Chemistry, and Physics and Astronomy, Rice University, Houston, TX, 77005, USA
- Rice Advanced Materials Institute, Rice University, Houston, TX, 77005, USA
| | - Jie Yao
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ziqiang Qiu
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, 14853, USA
| | - Robert J Birgeneau
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
- Department of Physics and Astronomy, Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
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3
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Zhu L. Switching of Perpendicular Magnetization by Spin-Orbit Torque. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300853. [PMID: 37004142 DOI: 10.1002/adma.202300853] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2023] [Revised: 03/16/2023] [Indexed: 06/19/2023]
Abstract
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical switching of such perpendicular magnetization in an energy-efficient, deterministic, scalable manner has remained a big challenge. This problem has recently attracted enormous efforts in the field of spintronics. Here, recent advances and challenges in the understanding of the electrical generation of spin currents, the switching mechanisms and the switching strategies of perpendicular magnetization, the switching current density by spin-orbit torque of transverse spins, the choice of perpendicular magnetic materials are reviewed, and the progress in prototype perpendicular SOT memory and logic devices toward the goal of energy-efficient, dense, fast perpendicular spin-orbit torque applications is summarized.
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Affiliation(s)
- Lijun Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
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4
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Zhang J, Zhao Y, Dou P, Peng W, Huang H, Deng X, Wang Y, Liu J, Xu J, Zhu T, Qi J, Zheng X, Wu Y, Shen B, Wang S. Controllable Spin-Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations. ACS APPLIED MATERIALS & INTERFACES 2023; 15:49902-49910. [PMID: 37815887 DOI: 10.1021/acsami.3c12551] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/12/2023]
Abstract
Electrically generated spin-orbit torque (SOT) has emerged as a powerful pathway to control magnetization for spintronic applications including memory, logic, and neurocomputing. However, the requirement of external magnetic fields, together with the ultrahigh current density, is the main obstacle for practical SOT devices. In this paper, we report that the field-free SOT-driven magnetization switching can be successfully realized by interfacial ion absorption in perpendicular Ta/CoFeB/MgO multilayers. Besides, the tunable SOT efficiency exhibits a strong dependence on interfacial Ti insertion thicknesses. Polarized neutron reflection measurements demonstrate the existence of canted magnetization with Ti inserted, which leads to deterministic magnetization switching. In addition, interfacial characterization and first-principles calculations reveal that B absorption by the Ti layer is the main cause behind the enhanced interfacial transparency, which determines the tunable SOT efficiency. Our findings highlight an attractive scheme to a purely electric control spin configuration, enabling innovative designs for SOT-based spintronics via interfacial engineering.
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Affiliation(s)
- Jingyan Zhang
- School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yunchi Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Pengwei Dou
- School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Wenlin Peng
- School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - He Huang
- School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Xiao Deng
- School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yuanbo Wang
- School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jialong Liu
- Department of Physics and Electronics, School of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
| | - Jiawang Xu
- Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jie Qi
- School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Xinqi Zheng
- School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yanfei Wu
- School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shouguo Wang
- School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
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5
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Aoki M, Yin Y, Granville S, Zhang Y, Medhekar NV, Leiva L, Ohshima R, Ando Y, Shiraishi M. Gigantic Anisotropy of Self-Induced Spin-Orbit Torque in Weyl Ferromagnet Co 2MnGa. NANO LETTERS 2023; 23:6951-6957. [PMID: 37477708 DOI: 10.1021/acs.nanolett.3c01573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/22/2023]
Abstract
Spin-orbit torque (SOT) is receiving tremendous attention from both fundamental and application-oriented aspects. Co2MnGa, a Weyl ferromagnet that is in a class of topological quantum materials, possesses cubic-based high structural symmetry, the L21 crystal ordering, which should be incapable of hosting anisotropic SOT in conventional understanding. Here we show the discovery of a gigantic anisotropy of self-induced SOT in Co2MnGa. The magnitude of the SOT is comparable to that of heavy metal/ferromagnet bilayer systems, despite the high inversion symmetry of the Co2MnGa structure. More surprisingly, a sign inversion of the self-induced SOT is observed for different crystal axes. This finding stems from the interplay of the topological nature of the electronic states and their strong modulation by external strain. Our research enriches the understanding of the physics of self-induced SOT and demonstrates a versatile method for tuning SOT efficiencies in a wide range of materials for topological and spintronic devices.
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Affiliation(s)
- Motomi Aoki
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
- Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-011, Japan
| | - Yuefeng Yin
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low Energy Electronics Technologies, Clayton, Victoria 3800, Australia
| | - Simon Granville
- Robinson Research Institute, Victoria University of Wellington, Wellington 6140, New Zealand
- The MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington 6011, New Zealand
| | - Yao Zhang
- Robinson Research Institute, Victoria University of Wellington, Wellington 6140, New Zealand
- The MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington 6011, New Zealand
| | - Nikhil V Medhekar
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low Energy Electronics Technologies, Clayton, Victoria 3800, Australia
| | - Livio Leiva
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
| | - Ryo Ohshima
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
- Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-011, Japan
| | - Yuichiro Ando
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
- Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-011, Japan
- PRESTO, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Masashi Shiraishi
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
- Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-011, Japan
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6
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Jiang M, Asahara H, Ohya S, Tanaka M. Electric Field Control of Spin-Orbit Torque Magnetization Switching in a Spin-Orbit Ferromagnet Single Layer. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2301540. [PMID: 37329321 PMCID: PMC10460875 DOI: 10.1002/advs.202301540] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2023] [Revised: 04/29/2023] [Indexed: 06/19/2023]
Abstract
To achieve a desirable magnitude of spin-orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin-orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current-induced effective magnetic field in a single layer of a ferromagnet with strong spin-orbit interactions, the so-called spin-orbit ferromagnet, can be utilized to induce SOT. In spin-orbit ferromagnet systems, electric field application has the potential for manipulating the spin-orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate-controlled SOT devices.
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Affiliation(s)
- Miao Jiang
- School of Materials Science and EngineeringBeijing Institute of TechnologyZhongguancun South Street No.5, HaidianBeijing100081China
- Department of Electrical Engineering and Information SystemsThe University of Tokyo7‐3‐1 Hongo, Bunkyo‐kuTokyo113‐8656Japan
| | - Hirokatsu Asahara
- Department of Electrical Engineering and Information SystemsThe University of Tokyo7‐3‐1 Hongo, Bunkyo‐kuTokyo113‐8656Japan
| | - Shinobu Ohya
- Department of Electrical Engineering and Information SystemsThe University of Tokyo7‐3‐1 Hongo, Bunkyo‐kuTokyo113‐8656Japan
- Center for Spintronics Research Network (CSRN)Graduate School of EngineeringThe University of Tokyo7‐3‐1 Hongo, Bunkyo‐kuTokyo113‐8656Japan
| | - Masaaki Tanaka
- Department of Electrical Engineering and Information SystemsThe University of Tokyo7‐3‐1 Hongo, Bunkyo‐kuTokyo113‐8656Japan
- Center for Spintronics Research Network (CSRN)Graduate School of EngineeringThe University of Tokyo7‐3‐1 Hongo, Bunkyo‐kuTokyo113‐8656Japan
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7
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Li M, Pi H, Zhao Y, Lin T, Zhang Q, Hu X, Xiong C, Qiu Z, Wang L, Zhang Y, Cai J, Liu W, Sun J, Hu F, Gu L, Weng H, Wu Q, Wang S, Chen Y, Shen B. Large Anomalous Nernst Effects at Room Temperature in Fe 3 Pt Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301339. [PMID: 37308132 DOI: 10.1002/adma.202301339] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Revised: 06/04/2023] [Indexed: 06/14/2023]
Abstract
Heat current in ferromagnets can generate a transverse electric voltage perpendicular to magnetization, known as anomalous Nernst effect (ANE). ANE originates intrinsically from the combination of large Berry curvature and density of states near the Fermi energy. It shows technical advantages over the conventional longitudinal Seebeck effect in converting waste heat to electricity due to its unique transverse geometry. However, materials showing giant ANE remain to be explored. Herein, a large ANE thermopower of Syx ≈ 2 µV K-1 at room temperature in ferromagnetic Fe3 Pt epitaxial films is reported, which also show a giant transverse thermoelectric conductivity of αyx ≈ 4 A K-1 m-1 and a remarkable coercive field of 1300 Oe. The theoretical analysis reveals that the strong spin-orbit interaction in addition to the hybridization between Pt 5d and Fe 3d electrons leads to a series of distinct energy gaps and large Berry curvature in the Brillouin zone, which is the key for the large ANE. These results highlight the important roles of both Berry curvature and spin-orbit coupling in achieving large ANE at zero magnetic field, providing pathways to explore materials with giant transverse thermoelectric effect without an external magnetic field.
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Affiliation(s)
- Minghang Li
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hanqi Pi
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunchi Zhao
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Ting Lin
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xinzhe Hu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Changmin Xiong
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Zhiyong Qiu
- School of Material Science and Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Lichen Wang
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ying Zhang
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jianwang Cai
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wuming Liu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jirong Sun
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fengxia Hu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lin Gu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hongming Weng
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Quansheng Wu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shouguo Wang
- School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Yunzhong Chen
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Baogen Shen
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, 341000, China
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8
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Ren L, Zhou C, Song X, Seng HT, Liu L, Li C, Zhao T, Zheng Z, Ding J, Feng YP, Chen J, Teo KL. Efficient Spin-Orbit Torque Switching in a Perpendicularly Magnetized Heusler Alloy MnPtGe Single Layer. ACS NANO 2023; 17:6400-6409. [PMID: 36942968 DOI: 10.1021/acsnano.2c11132] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Electrically manipulating magnetic moments by spin-orbit torque (SOT) has great potential applications in magnetic memories and logic devices. Although there have been rich SOT studies on magnetic heterostructures, low interfacial thermal stability and high switching current density still remain an issue. Here, highly textured, polycrystalline Heusler alloy MnxPtyGe (MPG) films with various thicknesses are directly deposited onto thermally oxidized silicon wafers. The perpendicular magnetization of the MPG single layer can be reversibly switched by electrical current pulses with a magnitude as low as 4.1 × 1010Am-2, as evidenced by both the electrical transport and the magnetic optical measurements. The switching is shown to arise from inversion symmetry breaking due to the vertical composition gradient of the films after sample annealing. The SOT effective fields of the samples are analyzed systematically. It is found that the SOT efficiency increases with the film thickness, suggesting a robust bulk-like behavior in the single magnetic layer. Furthermore, a memristive characteristic has been observed due to a multidomain switching property in the single-layer MPG device. Additionally, deterministic field-free switching of magnetization is observed when the electric current flows orthogonal to the direction of the in-plane compositional gradient due to the in-plane symmetry breaking. This work proves that the MPG is a good candidate to be utilized in high-density and efficient magnetoresistive random access memory devices and other spintronic applications.
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Affiliation(s)
- Lizhu Ren
- Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
| | - Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Xiaohe Song
- Integrative Sciences and Engineering Programme, NUS Graduate School, National University of Singapore, 119077, Singapore
- Department of Physics, National University of Singapore, 117551 Singapore
| | - Herng Tun Seng
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Liang Liu
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Chaojiang Li
- School of Mechanical and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Zhenyi Zheng
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Jun Ding
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 117551 Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Kie Leong Teo
- Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
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9
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Huang Q, Guan C, Fan Y, Zhao X, Han X, Dong Y, Xie X, Zhou T, Bai L, Peng Y, Tian Y, Yan S. Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering. ACS NANO 2022; 16:12462-12470. [PMID: 35866710 DOI: 10.1021/acsnano.2c03756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A simple, reliable, and self-switchable spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic single layer is needed for the development of next generation fully electrical controllable spintronic devices. In this work, field-free SOT-induced magnetization switching in a CoPt single layer is realized by broken multiple inversion symmetry through simultaneously introducing both oblique sputtering and a vertical composition gradient. A quantitative analysis indicates that multiple inversion asymmetries can produce dynamical bias fields along both z- and x-axes, leading to the observed field-free deterministic magnetization switching. Our study provides a method to accomplish fully electrical manipulation of magnetization in a ferromagnetic single layer without the external magnetic field and auxiliary heavy metal layer, enabling flexible design for future spin-orbit torque-based memory and logic devices.
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Affiliation(s)
- Qikun Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Chaoshuai Guan
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Yibo Fan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiaonan Zhao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiang Han
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yanan Dong
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xuejie Xie
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Tie Zhou
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lihui Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yong Peng
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Yufeng Tian
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shishen Yan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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10
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Chang L, Wu C, Wang Q, Li T, Zhao D, Wang K, Wang Q, Pei W. Operating interfaces to synthesize L1 0-FePt@Bi-rich nanoparticles by modifying the heating process. NANOSCALE 2022; 14:11738-11744. [PMID: 35916325 DOI: 10.1039/d2nr01493a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A facile strategy to operate interfaces when synthesizing L10-FePt@Bi-rich nanoparticles (NPs) has been proposed. Two interfaces are indispensable to obtain the high ordering L10-FePt structure. One is the mismatched interfaces between the initial γ-PtBi2 nuclei and the disordered fcc-FePt phase. The other is the in situ grown coherent interfaces between the L10-FePt and Bi-rich phases. Increasing the heating rates when the temperature rises from 120 °C to 310 °C benefits the formation of mismatched interfaces and improves the uniformity of phases and composition in NPs. Reducing the heating rate at higher temperature ensures sufficient time for Bi to diffuse across the coherent interface, which facilitates the disorder-order transition of L10-FePt NPs. This study provides a new perspective on operating interfaces during the wet-chemical synthesis process.
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Affiliation(s)
- Ling Chang
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China.
- School of Metallurgy, Northeastern University, Shenyang 110819, China
| | - Chun Wu
- Key Laboratory of Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China.
- School of Materials Science and Engineering, Liaoning Technical University, Fuxin, 123000, China
| | - Qunshou Wang
- Key Laboratory of Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Ting Li
- Key Laboratory of Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Dong Zhao
- Key Laboratory of Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China.
| | - Kai Wang
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China.
| | - Qiang Wang
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China.
| | - Wenli Pei
- Key Laboratory of Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China.
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11
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Liu L, Zhou C, Zhao T, Yao B, Zhou J, Shu X, Chen S, Shi S, Xi S, Lan D, Lin W, Xie Q, Ren L, Luo Z, Sun C, Yang P, Guo EJ, Dong Z, Manchon A, Chen J. Current-induced self-switching of perpendicular magnetization in CoPt single layer. Nat Commun 2022; 13:3539. [PMID: 35725723 PMCID: PMC9209536 DOI: 10.1038/s41467-022-31167-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Accepted: 06/07/2022] [Indexed: 11/30/2022] Open
Abstract
All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of CoxPt100-x single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co30Pt70 shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in CoxPt100-x single layer greatly simplifies the SOT structure and avoids additional asymmetric designs. One challenge for spin-based electronics is the controlled and reliable switching of magnetization without magnetic fields. Here, Liu et al investigate a variety of compositions of CoPt, and determine the specific composition to maximize switching performance, potentially simplifying device design.
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Affiliation(s)
- Liang Liu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Bingqing Yao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jing Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Xinyu Shu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shaohai Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shu Shi
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shibo Xi
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore.,Institute of Sustainability for Chemicals, Energy and Environment, A*STAR (Agency for Science, Technology and Research), 1 Pesek Road, Jurong Island, Singapore
| | - Da Lan
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Qidong Xie
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Lizhu Ren
- Department of Electrical and Computing Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Zhaoyang Luo
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Chao Sun
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Ping Yang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.,Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhili Dong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | | | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore. .,Suzhou Research Institute, National University of Singapore, Suzhou, 215123, China. .,Chongqing Research Institute, National University of Singapore, Chongqing, 401120, China. .,Institute of Material Research and Engineering, A*STAR, Singapore, 138634, Singapore.
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12
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Zhang Q, Liang J, Bi K, Zhao L, Bai H, Cui Q, Zhou HA, Bai H, Feng H, Song W, Chai G, Gladii O, Schultheiss H, Zhu T, Zhang J, Peng Y, Yang H, Jiang W. Quantifying the Dzyaloshinskii-Moriya Interaction Induced by the Bulk Magnetic Asymmetry. PHYSICAL REVIEW LETTERS 2022; 128:167202. [PMID: 35522502 DOI: 10.1103/physrevlett.128.167202] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Revised: 01/13/2022] [Accepted: 03/08/2022] [Indexed: 06/14/2023]
Abstract
A broken interfacial inversion symmetry in ultrathin ferromagnet/heavy metal (FM/HM) bilayers is generally believed to be a prerequisite for accommodating the Dzyaloshinskii-Moriya interaction (DMI) and for stabilizing chiral spin textures. In these bilayers, the strength of the DMI decays as the thickness of the FM layer increases and vanishes around a few nanometers. In the present study, through synthesizing relatively thick films of compositions CoPt or FePt, CoCu or FeCu, FeGd and FeNi, contributions to DMI from the composition gradient-induced bulk magnetic asymmetry (BMA) and spin-orbit coupling (SOC) are systematically examined. Using Brillouin light scattering spectroscopy, both the sign and amplitude of DMI in films with controllable direction and strength of BMA, in the presence and absence of SOC, are experimentally studied. In particular, we show that a sizable amplitude of DMI (±0.15 mJ/m^{2}) can be realized in CoPt or FePt films with BMA and strong SOC, whereas negligible DMI strengths are observed in other thick films with BMA but without significant SOC. The pivotal roles of BMA and SOC are further examined based on the three-site Fert-Lévy model and first-principles calculations. It is expected that our findings may help to further understand the origin of chiral magnetism and to design novel noncollinear spin textures.
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Affiliation(s)
- Qihan Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Jinghua Liang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Kaiqi Bi
- School of Materials and Energy, Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Le Zhao
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - He Bai
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Qirui Cui
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Heng-An Zhou
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Hao Bai
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Hongmei Feng
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
| | - Wenjie Song
- Key Laboratory of Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
| | - Guozhi Chai
- Key Laboratory of Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
| | - O Gladii
- Institut für Ionenstrahlphysik und Materialforschung, Helmholtz-Zentrum Dresden-Rossendorf, D-01328 Dresden, Germany
| | - H Schultheiss
- Institut für Ionenstrahlphysik und Materialforschung, Helmholtz-Zentrum Dresden-Rossendorf, D-01328 Dresden, Germany
| | - Tao Zhu
- Spallation Neutron Source Science Center, Dongguan 523803, China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Junwei Zhang
- School of Materials and Energy, Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Yong Peng
- School of Materials and Energy, Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Hongxin Yang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wanjun Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
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13
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Sun C, Jiao Y, Zuo C, Hu X, Tao Y, Jin F, Mo W, Hui Y, Song J, Dong K. Field-free switching of perpendicular magnetization through spin-orbit torque in FePt/[TiN/NiFe] 5 multilayers. NANOSCALE 2021; 13:18293-18299. [PMID: 34723309 DOI: 10.1039/d1nr04632b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In order to maintain the thermal stability of SOT devices with nanoscale size, it is desirable to achieve current induced magnetic switching in magnetic materials with high perpendicular anisotropy. In the present paper, current induced field-free switching of FePt/[TiN/NiFe]5 is achieved by interlayer exchange coupling, in which in-plane magnetized NiFe serves as a coupling layer through a TiN space layer. The large Ku (1.03 × 107 erg cc-1) and low critical current density values (0.17 × 107 A cm-2) show great advantages in thermal stability and energy consumption. Interestingly, it is found that the rotation directions of the current-induced magnetic switching loops under different applied magnetic fields are dependent on the sputtering temperature of [TiN/NiFe]5 multilayers: once sign change for FePt/[TiN/NiFe]5 RT and three sign changes for FePt/[TiN/NiFe]5 HT. Simultaneously, when the magnetization direction of NiFe changes from the Hx direction to -Hx direction, the switching polarities at Hx = 0 always remain unchanged, which is different from other groups' reports. These phenomena may be attributed to the combined effect of TiN layer thickness induced ferromagnetic or antiferromagnetic coupling and the inherent Hin. Furthermore, gradual tuning of resistance states through the trains of current pulses has also been realized, showing potential applications in artificial synaptic networks. These results will put forward the applications of L10-FePt in current controlled MRAM and neuromorphic computing.
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Affiliation(s)
- Chao Sun
- School of Automation, China University of Geosciences, Wuhan 430074, China.
- Hubei key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Yiyi Jiao
- School of Automation, China University of Geosciences, Wuhan 430074, China.
- Hubei key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Chao Zuo
- Wuhan Second Ship Design and Research Institute, Wuhan 430064, China.
| | - Xin Hu
- School of Automation, China University of Geosciences, Wuhan 430074, China.
- Hubei key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Ying Tao
- School of Automation, China University of Geosciences, Wuhan 430074, China.
- Hubei key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Fang Jin
- School of Automation, China University of Geosciences, Wuhan 430074, China.
- Hubei key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Wenqin Mo
- School of Automation, China University of Geosciences, Wuhan 430074, China.
- Hubei key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Yajuan Hui
- School of Automation, China University of Geosciences, Wuhan 430074, China.
- Hubei key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Junlei Song
- School of Automation, China University of Geosciences, Wuhan 430074, China.
- Hubei key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
| | - Kaifeng Dong
- School of Automation, China University of Geosciences, Wuhan 430074, China.
- Hubei key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
- Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China
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14
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Vashisht G, Hussain Z, Sulania I, Ojha S, Reddy VR, Annapoorni S. Domain state modulation by interfacial diffusion in FePt/FeCo thin films: experimental approach with micromagnetic modelling. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:335805. [PMID: 34107463 DOI: 10.1088/1361-648x/ac09a5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2021] [Accepted: 06/09/2021] [Indexed: 06/12/2023]
Abstract
We report the complex implications of inter-diffusion between polycrystalline FePt/FeCo layers as an impact of the FeCo underlayer on the structural and magnetic properties of the system. The crystalline growth of FePt strongly reduces in an entirely diffused system compared to the one with lesser diffusion, while the crystalline structure of FeCo is apparently less affected. Charge redistribution occurs between Fe, Co and Pt ensuring increased Co-Pt and Fe-Pt interactions with higher diffusion. Thereafter, we combine hysteresis and magnetic force microscopy measurements to show that the interfacial deformations result in the distinct out-plane magnetic behaviour of the system. FeCo@FePt nano-composite like structure, originating due to interfacial diffusion, shows interactions between two magnetic phases with in-plane low anisotropy exhibiting wasp-shaped out-plane hysteresis loop. Whereas the layered structure of FePt/FeCo films shows random anisotropy with a significant out-plane contribution even in the polycrystalline films. Micromagnetic modelling demonstrates coercivity deterioration and reduction of switching field due to the formation of a slightly diffused interface. Contrarily, the experimental observations for complete diffusion between the two layers are explained by simulating the inhomogeneous distribution of anisotropies along the film plane. These studies provide deep perceptions of the magnetic properties of FePt/FeCo system governed by diffusion kinetics which are valuable to achieve desired magnetic characteristics using this system.
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Affiliation(s)
- Garima Vashisht
- Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India
| | - Zainab Hussain
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
| | - Indra Sulania
- Material Science Division, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067, India
| | - Sunil Ojha
- Material Science Division, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067, India
| | - V R Reddy
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
| | - S Annapoorni
- Department of Physics and Astrophysics, University of Delhi, Delhi-110007, India
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15
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Céspedes-Berrocal D, Damas H, Petit-Watelot S, Maccariello D, Tang P, Arriola-Córdova A, Vallobra P, Xu Y, Bello JL, Martin E, Migot S, Ghanbaja J, Zhang S, Hehn M, Mangin S, Panagopoulos C, Cros V, Fert A, Rojas-Sánchez JC. Current-Induced Spin Torques on Single GdFeCo Magnetic Layers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007047. [PMID: 33604960 DOI: 10.1002/adma.202007047] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2020] [Revised: 12/20/2020] [Indexed: 06/12/2023]
Abstract
Spintronics exploit spin-orbit coupling (SOC) to generate spin currents, spin torques, and, in the absence of inversion symmetry, Rashba and Dzyaloshinskii-Moriya interactions. The widely used magnetic materials, based on 3d metals such as Fe and Co, possess a small SOC. To circumvent this shortcoming, the common practice has been to utilize the large SOC of nonmagnetic layers of 5d heavy metals (HMs), such as Pt, to generate spin currents and, in turn, exert spin torques on the magnetic layers. Here, a new class of material architectures is introduced, excluding nonmagnetic 5d HMs, for high-performance spintronics operations. Very strong current-induced torques exerted on single ferrimagnetic GdFeCo layers, due to the combination of large SOC of the Gd 5d states and inversion symmetry breaking mainly engineered by interfaces, are demonstrated. These "self-torques" are enhanced around the magnetization compensation temperature and can be tuned by adjusting the spin absorption outside the GdFeCo layer. In other measurements, the very large emission of spin current from GdFeCo, 80% (20%) of spin anomalous Hall effect (spin Hall effect) symmetry is determined. This material platform opens new perspectives to exert "self-torques" on single magnetic layers as well as to generate spin currents from a magnetic layer.
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Affiliation(s)
- David Céspedes-Berrocal
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
- Facultad de Ciencias, Universidad Nacional de Ingeniería, Rímac, Lima, 15333, Peru
| | - Heloïse Damas
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | | | - Davide Maccariello
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | - Ping Tang
- Department of Physics, University of Arizona, Tucson, AZ, 85721, USA
| | - Aldo Arriola-Córdova
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
- Facultad de Ciencias, Universidad Nacional de Ingeniería, Rímac, Lima, 15333, Peru
| | - Pierre Vallobra
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Yong Xu
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Jean-Loïs Bello
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Elodie Martin
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Sylvie Migot
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Jaafar Ghanbaja
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Shufeng Zhang
- Department of Physics, University of Arizona, Tucson, AZ, 85721, USA
| | - Michel Hehn
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Stéphane Mangin
- Institute Jean Lamour, Université de Lorraine, CNRS, Nancy, F-54000, France
| | - Christos Panagopoulos
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Vincent Cros
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | - Albert Fert
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
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16
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Guo Q, Wang Z. Temperature assistance of electric field-controlled spin–orbit torque-based magnetization switching in PMN–PT/FePt heterostructures. RSC Adv 2021; 11:12043-12050. [PMID: 35423760 PMCID: PMC8697033 DOI: 10.1039/d1ra00919b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/03/2021] [Accepted: 03/10/2021] [Indexed: 11/21/2022] Open
Abstract
E-field has an improved regulating effect on PMA and SOT-based current induced magnetization switching of PMN–PT/FePt heterostructures.
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Affiliation(s)
- Qi Guo
- School of Materials Science and Engineering
- Taiyuan University of Science and Technology
- Taiyuan 030024
- China
| | - Zhicheng Wang
- School of Materials Science and Engineering
- Taiyuan University of Science and Technology
- Taiyuan 030024
- China
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17
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Shao Q, Li P, Liu L, Yang H, Fukami S, Razavi A, Wu H, Wang K, Freimuth F, Mokrousov Y, Stiles MD, Emori S, Hoffmann A, Åkerman J, Roy K, Wang JP, Yang SH, Garello K, Zhang W. Roadmap of spin-orbit torques. IEEE TRANSACTIONS ON MAGNETICS 2021; 57:10.48550/arXiv.2104.11459. [PMID: 37057056 PMCID: PMC10091395 DOI: 10.48550/arxiv.2104.11459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.
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Affiliation(s)
- Qiming Shao
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology
| | - Peng Li
- Department of Electrical and Computer Engineering, Auburn University
| | - Luqiao Liu
- Electrical Engineering and Computer Science, Massachusetts Institute of Technology
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore
| | - Shunsuke Fukami
- Research Institute of Electrical Communication, Tohoku University
| | - Armin Razavi
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | - Hao Wu
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | - Kang Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | | | | | - Mark D Stiles
- Alternative Computing Group, National Institute of Standards and Technology
| | | | - Axel Hoffmann
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign
| | | | - Kaushik Roy
- Department of Electrical and Computer Engineering, Purdue University
| | - Jian-Ping Wang
- Electrical and Computer Engineering Department, University of Minnesota
| | | | - Kevin Garello
- IMEC, Leuven, Belgium; CEA-Spintec, Grenoble, France
| | - Wei Zhang
- Physics Department, Oakland University
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Abstract
Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.
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Affiliation(s)
- Yi Cao
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Guozhong Xing
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
| | - Huai Lin
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
| | - Nan Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Houzhi Zheng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Kaiyou Wang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Corresponding author
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