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Pan Q, Gu ZX, Zhou RJ, Feng ZJ, Xiong YA, Sha TT, You YM, Xiong RG. The past 10 years of molecular ferroelectrics: structures, design, and properties. Chem Soc Rev 2024; 53:5781-5861. [PMID: 38690681 DOI: 10.1039/d3cs00262d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Ferroelectricity, which has diverse important applications such as memory elements, capacitors, and sensors, was first discovered in a molecular compound, Rochelle salt, in 1920 by Valasek. Owing to their superiorities of lightweight, biocompatibility, structural tunability, mechanical flexibility, etc., the past decade has witnessed the renaissance of molecular ferroelectrics as promising complementary materials to commercial inorganic ferroelectrics. Thus, on the 100th anniversary of ferroelectricity, it is an opportune time to look into the future, specifically into how to push the boundaries of material design in molecular ferroelectric systems and finally overcome the hurdles to their commercialization. Herein, we present a comprehensive and accessible review of the appealing development of molecular ferroelectrics over the past 10 years, with an emphasis on their structural diversity, chemical design, exceptional properties, and potential applications. We believe that it will inspire intense, combined research efforts to enrich the family of high-performance molecular ferroelectrics and attract widespread interest from physicists and chemists to better understand the structure-function relationships governing improved applied functional device engineering.
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Affiliation(s)
- Qiang Pan
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, P. R. China.
| | - Zhu-Xiao Gu
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, P. R. China.
- State Key Laboratory of Pharmaceutical Biotechnology, Nanjing University, Nanjing 210008, P. R. China.
| | - Ru-Jie Zhou
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, P. R. China.
| | - Zi-Jie Feng
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, P. R. China.
| | - Yu-An Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, P. R. China.
| | - Tai-Ting Sha
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, P. R. China.
| | - Yu-Meng You
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, P. R. China.
| | - Ren-Gen Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, P. R. China.
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Wang J, Liu Z, Wang Q, Nie F, Chen Y, Tian G, Fang H, He B, Guo J, Zheng L, Li C, Lü W, Yan S. Ultralow Strain-Induced Emergent Polarization Structures in a Flexible Freestanding BaTiO 3 Membrane. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401657. [PMID: 38647365 DOI: 10.1002/advs.202401657] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2024] [Indexed: 04/25/2024]
Abstract
The engineering of ferroic orders, which involves the evolution of atomic structure and local ferroic configuration in the development of next-generation electronic devices. Until now, diverse polarization structures and topological domains are obtained in ferroelectric thin films or heterostructures, and the polarization switching and subsequent domain nucleation are found to be more conducive to building energy-efficient and multifunctional polarization structures. In this work, a continuous and periodic strain in a flexible freestanding BaTiO3 membrane to achieve a zigzag morphology is introduced. The polar head/tail boundaries and vortex/anti-vortex domains are constructed by a compressive strain as low as ≈0.5%, which is extremely lower than that used in epitaxial rigid ferroelectrics. Overall, this study c efficient polarization structures, which is of both theoretical value and practical significance for the development of next-generation flexible multifunctional devices.
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Affiliation(s)
- Jie Wang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zhen Liu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Qixiang Wang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
| | - Fang Nie
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Yanan Chen
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
| | - Gang Tian
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Hong Fang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Bin He
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
| | - Jinrui Guo
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
| | - Limei Zheng
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Changjian Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Weiming Lü
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Shishen Yan
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
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3
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Varshney S, Choo S, Thompson L, Yang Z, Shah J, Wen J, Koester SJ, Mkhoyan KA, McLeod AS, Jalan B. Hybrid Molecular Beam Epitaxy for Single-Crystalline Oxide Membranes with Binary Oxide Sacrificial Layers. ACS NANO 2024; 18:6348-6358. [PMID: 38314696 DOI: 10.1021/acsnano.3c11192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
The advancement in thin-film exfoliation for synthesizing oxide membranes has led to possibilities for creating artificially assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing for their integration with dissimilar materials. Nonetheless, the conventional sacrificial layers often possess an intricate stoichiometry, thereby constraining their practicality and adaptability, particularly when considering techniques such as molecular beam epitaxy (MBE). This is where easy-to-grow binary alkaline-earth-metal oxides with a rock salt crystal structure are useful. These oxides, which include (Mg, Ca, Sr, Ba)O, can be used as a sacrificial layer covering a much broader range of lattice parameters compared to conventional sacrificial layers and are easily dissolvable in deionized water. In this study, we show the epitaxial growth of the single-crystalline perovskite SrTiO3 (STO) on sacrificial layers consisting of crystalline SrO, BaO, and Ba1-xCaxO films, employing a hybrid MBE method. Our results highlight the rapid (≤5 min) dissolution of the sacrificial layer when immersed in deionized water, facilitating the fabrication of millimeter-sized STO membranes. Using high-resolution X-ray diffraction, atomic-force microscopy, scanning transmission electron microscopy, impedance spectroscopy, and scattering-type near-field optical microscopy (SNOM), we demonstrate single-crystalline STO membranes with bulk-like intrinsic dielectric properties. The employment of alkaline earth metal oxides as sacrificial layers is likely to simplify membrane synthesis, particularly with MBE, thus expanding the research and application possibilities.
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Affiliation(s)
- Shivasheesh Varshney
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Sooho Choo
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Liam Thompson
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Zhifei Yang
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Jay Shah
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Jiaxuan Wen
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Steven J Koester
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - K Andre Mkhoyan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Alexander S McLeod
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
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4
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Sánchez-Santolino G, Rouco V, Puebla S, Aramberri H, Zamora V, Cabero M, Cuellar FA, Munuera C, Mompean F, Garcia-Hernandez M, Castellanos-Gomez A, Íñiguez J, Leon C, Santamaria J. A 2D ferroelectric vortex pattern in twisted BaTiO 3 freestanding layers. Nature 2024; 626:529-534. [PMID: 38356067 PMCID: PMC10866709 DOI: 10.1038/s41586-023-06978-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Accepted: 12/14/2023] [Indexed: 02/16/2024]
Abstract
The wealth of complex polar topologies1-10 recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency of the materials to develop a homogeneous polarization and the electric and mechanical boundary conditions imposed on them. Ferroelectric-dielectric interfaces are model systems in which polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure11-14 domains that evolve into vortex-like structures at the nanoscale15-17 level. Although ferroelectricity is known to couple strongly with strain (both homogeneous18 and inhomogeneous19,20), the effect of mechanical constraints21 on thin-film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles provides an opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated with the twisting. Furthermore, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding provides opportunities to create two-dimensional high-density vortex crystals that would enable us to explore previously unknown physical effects and functionalities.
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Affiliation(s)
- G Sánchez-Santolino
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
| | - V Rouco
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
| | - S Puebla
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - H Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
| | - V Zamora
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - M Cabero
- ICTS Centro Nacional de Microscopia Electrónica 'Luis Brú', Universidad Complutense, Madrid, Spain
| | - F A Cuellar
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - C Munuera
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - F Mompean
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - M Garcia-Hernandez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - A Castellanos-Gomez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - J Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
| | - C Leon
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
| | - J Santamaria
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
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5
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Wu Q, Wang K, Simpson A, Hao Y, Wang J, Li D, Hong X. Electrode Effect on Ferroelectricity in Free-Standing Membranes of PbZr 0.2Ti 0.8O 3. ACS NANOSCIENCE AU 2023; 3:482-490. [PMID: 38144704 PMCID: PMC10740143 DOI: 10.1021/acsnanoscienceau.3c00032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/01/2023] [Revised: 09/30/2023] [Accepted: 10/02/2023] [Indexed: 12/26/2023]
Abstract
We report the effects of screening capacity, surface roughness, and interfacial epitaxy of the bottom electrodes on the polarization switching, domain wall (DW) roughness, and ferroelectric Curie temperature (TC) of PbZr0.2Ti0.8O3 (PZT)-based free-standing membranes. Singe crystalline 10-50 nm (001) PZT and PZT/La0.67Sr0.33MnO3 (LSMO) membranes are prepared on Au, correlated oxide LSMO, and two-dimensional (2D) semiconductor MoS2 base layers. Switching the polarization of PZT yields nonvolatile current modulation in the MoS2 channel at room temperature, with an on/off ratio of up to 2 × 105 and no apparent decay for more than 3 days. Piezoresponse force microscopy studies show that the coercive field Ec for the PZT membranes varies from 0.75 to 3.0 MV cm-1 on different base layers and exhibits strong polarization asymmetry. The PZT/LSMO membranes exhibit significantly smaller Ec, with the samples transferred on LSMO showing symmetric Ec of about -0.26/+0.28 MV cm-1, smaller than that of epitaxial PZT films. The DW roughness exponent ζ points to 2D random bond disorder dominated DW roughening (ζ = 0.31) at room temperature. Upon thermal quench at progressively higher temperatures, ζ values for PZT membranes on Au and LSMO approach the theoretical value for 1D random bond disorder (ζ = 2/3), while samples on MoS2 exhibits thermal roughening (ζ = 1/2). The PZT membranes on Au, LSMO, and MoS2 show TC of about 763 ± 12, 725 ± 25, and 588 ± 12 °C, respectively, well exceeding the bulk value. Our study reveals the complex interplay between the electrostatic and mechanical boundary conditions in determining ferroelectricity in free-standing PZT membranes, providing important material parameters for the functional design of PZT-based flexible nanoelectronics.
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Affiliation(s)
- Qiuchen Wu
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Kun Wang
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Alyssa Simpson
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Yifei Hao
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Jia Wang
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Dawei Li
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Xia Hong
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
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6
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He ZD, Li WC, Yang JL, Xu HK, Xu XF, Lai GX, Che YD, Zhu WL, Yang XD, Chen XY. Tuning ferroelectric photovoltaic performance in R3 c-CuNbO 3 through compressive strain engineering: a first-principles study. RSC Adv 2023; 13:34475-34481. [PMID: 38024997 PMCID: PMC10667965 DOI: 10.1039/d3ra07275d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2023] [Accepted: 11/20/2023] [Indexed: 12/01/2023] Open
Abstract
Most ferroelectric oxides exhibit relatively wide bandgaps, which pose limitations on their suitability for photovoltaics application. CuNbO3 possesses potential ferroelectric properties with an R3c polar structure that facilitate the separation of charge carriers under illumination, promoting the generation of photovoltaic effects. The optical and ferroelectric properties of R3c-CuNbO3, as well as the effect of strain on the properties are investigated by first-principles calculation in this paper. The calculated results indicate that R3c-CuNbO3 possesses a moderate band gap to absorb visible light. The interaction of Cu-O and Nb-O bonds is considered to have a crucial role in the photovoltaic properties of CuNbO3, contributing to the efficient absorption of visible light. The bandgap of CuNbO3 becomes smaller and the density of states near the conduction and valence bands becomes relatively uniform in distribution under compressive conditions, which improves the photoelectric conversion efficiency to 29.9% under conditions of bulk absorption saturation. The ferroelectric properties of CuNbO3 are driven by the Nb-O bond interactions, which are not significantly weakened by the compressive strain. CuNbO3 is expected to be an excellent ferroelectric photovoltaic material by modulation of compressive strain due to the stronger visible light absorption and excellent ferroelectric behavior.
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Affiliation(s)
- Zu-Da He
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology Maoming Guangdong 525000 PR China +86-668-2923567 +86-668-2923838
| | - Wen-Ce Li
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology Maoming Guangdong 525000 PR China +86-668-2923567 +86-668-2923838
| | - Jin-Long Yang
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology Maoming Guangdong 525000 PR China +86-668-2923567 +86-668-2923838
| | - Hua-Kai Xu
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology Maoming Guangdong 525000 PR China +86-668-2923567 +86-668-2923838
| | - Xiang-Fu Xu
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology Maoming Guangdong 525000 PR China +86-668-2923567 +86-668-2923838
| | - Guo-Xia Lai
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology Maoming Guangdong 525000 PR China +86-668-2923567 +86-668-2923838
| | - You-Da Che
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology Maoming Guangdong 525000 PR China +86-668-2923567 +86-668-2923838
| | - Wei-Ling Zhu
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology Maoming Guangdong 525000 PR China +86-668-2923567 +86-668-2923838
| | - Xiao-Dong Yang
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology Maoming Guangdong 525000 PR China +86-668-2923567 +86-668-2923838
| | - Xing-Yuan Chen
- Department of Physics, School of Science, Guangdong University of Petrochemical Technology Maoming Guangdong 525000 PR China +86-668-2923567 +86-668-2923838
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7
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Salles P, Machado P, Yu P, Coll M. Chemical synthesis of complex oxide thin films and freestanding membranes. Chem Commun (Camb) 2023; 59:13820-13830. [PMID: 37921594 DOI: 10.1039/d3cc03030j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Oxides offer unique physical and chemical properties that inspire rapid advances in materials chemistry to design and nanoengineer materials compositions and implement them in devices for a myriad of applications. Chemical deposition methods are gaining attention as a versatile approach to develop complex oxide thin films and nanostructures by properly selecting compatible chemical precursors and designing an accurate cost-effective thermal treatment. Here, upon describing the basics of chemical solution deposition (CSD) and atomic layer deposition (ALD), some examples of the growth of chemically-deposited functional complex oxide films that can have applications in energy and electronics are discussed. To go one step further, the suitability of these techniques is presented to prepare freestanding complex oxides which can notably broaden their applications. Finally, perspectives on the use of chemical methods to prepare future materials are given.
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Affiliation(s)
- Pol Salles
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Pamela Machado
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Pengmei Yu
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Mariona Coll
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
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8
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Wawra J, Nielsch K, Hühne R. Influence of Lattice Mismatch on Structural and Functional Properties of Epitaxial Ba 0.7Sr 0.3TiO 3 Thin Films. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6036. [PMID: 37687729 PMCID: PMC10488420 DOI: 10.3390/ma16176036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 08/28/2023] [Accepted: 08/31/2023] [Indexed: 09/10/2023]
Abstract
Substrate-induced strains can significantly influence the structural properties of epitaxial thin films. In ferroelectrics, this might lead to significant changes in the functional properties due to the strong electromechanical coupling in those materials. To study this in more detail, epitaxial Ba0.7Sr0.3TiO3 films, which have a perovskite structure and a structural phase transition close to room temperature, were grown with different thicknesses on REScO3 (RE-rare earth element) substrates having a smaller lattice mismatch compared to SrTiO3. A fully strained SrRuO3 bottom electrode and Pt top contacts were used to achieve a capacitor-like architecture. Different X-ray diffraction techniques were applied to study the microstructure of the films. Epitaxial films with a higher crystalline quality were obtained on scandates in comparison to SrTiO3, whereas the strain state of the functional layer was strongly dependent on the chosen substrate and the thickness. Differences in permittivity and a non-linear polarization behavior were observed at higher temperatures, suggesting that ferroelectricity is supressed under tensile strain conditions in contrast to compressive strain for our measurement configuration, while a similar reentrant relaxor-like behavior was found in all studied layers below 0°C.
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Affiliation(s)
- Jonas Wawra
- Leibniz Institute for Solid State and Materials Research, Helmholtzstrasse 20, D-01069 Dresden, Germany; (J.W.); (K.N.)
- Institute for Applied Physics, TUD Dresden University of Technology, D-01062 Dresden, Germany
| | - Kornelius Nielsch
- Leibniz Institute for Solid State and Materials Research, Helmholtzstrasse 20, D-01069 Dresden, Germany; (J.W.); (K.N.)
- Institute for Applied Physics, TUD Dresden University of Technology, D-01062 Dresden, Germany
| | - Ruben Hühne
- Leibniz Institute for Solid State and Materials Research, Helmholtzstrasse 20, D-01069 Dresden, Germany; (J.W.); (K.N.)
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9
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Shao Z, Schnitzer N, Ruf J, Gorobtsov OY, Dai C, Goodge BH, Yang T, Nair H, Stoica VA, Freeland JW, Ruff JP, Chen LQ, Schlom DG, Shen KM, Kourkoutis LF, Singer A. Real-space imaging of periodic nanotextures in thin films via phasing of diffraction data. Proc Natl Acad Sci U S A 2023; 120:e2303312120. [PMID: 37410867 PMCID: PMC10334741 DOI: 10.1073/pnas.2303312120] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Accepted: 05/11/2023] [Indexed: 07/08/2023] Open
Abstract
New properties and exotic quantum phenomena can form due to periodic nanotextures, including Moire patterns, ferroic domains, and topologically protected magnetization and polarization textures. Despite the availability of powerful tools to characterize the atomic crystal structure, the visualization of nanoscale strain-modulated structural motifs remains challenging. Here, we develop nondestructive real-space imaging of periodic lattice distortions in thin epitaxial films and report an emergent periodic nanotexture in a Mott insulator. Specifically, we combine iterative phase retrieval with unsupervised machine learning to invert the diffuse scattering pattern from conventional X-ray reciprocal-space maps into real-space images of crystalline displacements. Our imaging in PbTiO3/SrTiO3 superlattices exhibiting checkerboard strain modulation substantiates published phase-field model calculations. Furthermore, the imaging of biaxially strained Mott insulator Ca2RuO4 reveals a strain-induced nanotexture comprised of nanometer-thin metallic-structure wires separated by nanometer-thin Mott-insulating-structure walls, as confirmed by cryogenic scanning transmission electron microscopy (cryo-STEM). The nanotexture in Ca2RuO4 film is induced by the metal-to-insulator transition and has not been reported in bulk crystals. We expect the phasing of diffuse X-ray scattering from thin crystalline films in combination with cryo-STEM to open a powerful avenue for discovering, visualizing, and quantifying the periodic strain-modulated structures in quantum materials.
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Affiliation(s)
- Ziming Shao
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
| | - Noah Schnitzer
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
| | - Jacob Ruf
- Department of Physics, Cornell University, Ithaca, NY14853
| | - Oleg Yu. Gorobtsov
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
| | - Cheng Dai
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA16802
| | - Berit H. Goodge
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY14853
| | - Tiannan Yang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA16802
| | - Hari Nair
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
| | - Vlad A. Stoica
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA16802
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL60439
| | - John W. Freeland
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL60439
| | - Jacob P. Ruff
- Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY14853
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA16802
| | - Darrell G. Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY14853
- Leibniz-Institut für Kristallzüchtung, Berlin12489, Germany
| | - Kyle M. Shen
- Department of Physics, Cornell University, Ithaca, NY14853
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY14853
| | - Lena F. Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY14853
| | - Andrej Singer
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
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10
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Kang KT, Corey ZJ, Hwang J, Sharma Y, Paudel B, Roy P, Collins L, Wang X, Lee JW, Oh YS, Kim Y, Yoo J, Lee J, Htoon H, Jia Q, Chen A. Heterogeneous Integration of Freestanding Bilayer Oxide Membrane for Multiferroicity. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207481. [PMID: 37012611 DOI: 10.1002/advs.202207481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2022] [Revised: 02/02/2023] [Indexed: 05/27/2023]
Abstract
Transition metal oxides exhibit a plethora of electrical and magnetic properties described by their order parameters. In particular, ferroic orderings offer access to a rich spectrum of fundamental physics phenomena, in addition to a range of technological applications. The heterogeneous integration of ferroelectric and ferromagnetic materials is a fruitful way to design multiferroic oxides. The realization of freestanding heterogeneous membranes of multiferroic oxides is highly desirable. In this study, epitaxial BaTiO3 /La0.7 Sr0.3 MnO3 freestanding bilayer membranes are fabricated using pulsed laser epitaxy. The membrane displays ferroelectricity and ferromagnetism above room temperature accompanying the finite magnetoelectric coupling constant. This study reveals that a freestanding heterostructure can be used to manipulate the structural and emergent properties of the membrane. In the absence of the strain caused by the substrate, the change in orbital occupancy of the magnetic layer leads to the reorientation of the magnetic easy-axis, that is, perpendicular magnetic anisotropy. These results of designing multiferroic oxide membranes open new avenues to integrate such flexible membranes for electronic applications.
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Affiliation(s)
- Kyeong Tae Kang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Department of Physics, Kyungpook National University, Daegu, 41566, South Korea
| | - Zachary J Corey
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Department of Materials Design and Innovation, University of Buffalo - The State University of New York, Buffalo, NY, 14260, USA
| | - Jaejin Hwang
- Department of Physics, Pusan National University, Busan, 46241, South Korea
| | - Yogesh Sharma
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Binod Paudel
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Pinku Roy
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Department of Materials Design and Innovation, University of Buffalo - The State University of New York, Buffalo, NY, 14260, USA
| | - Liam Collins
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Xueijing Wang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Joon Woo Lee
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Yoon Seok Oh
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Yeonhoo Kim
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
- Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34133, South Korea
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan, 46241, South Korea
| | - Han Htoon
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Quanxi Jia
- Department of Materials Design and Innovation, University of Buffalo - The State University of New York, Buffalo, NY, 14260, USA
| | - Aiping Chen
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
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11
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Han L, Yang X, Lun Y, Guan Y, Huang F, Wang S, Yang J, Gu C, Gu ZB, Liu L, Wang Y, Wang P, Hong J, Pan X, Nie Y. Tuning Piezoelectricity via Thermal Annealing at a Freestanding Ferroelectric Membrane. NANO LETTERS 2023; 23:2808-2815. [PMID: 36961344 DOI: 10.1021/acs.nanolett.3c00096] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Tuning the ferroelectric domain structure by a combination of elastic and electrostatic engineering provides an effective route for enhanced piezoelectricity. However, for epitaxial thin films, the clamping effect imposed by the substrate does not allow aftergrowth tuning and also limits the electromechanical response. In contrast, freestanding membranes, which are free of substrate constraints, enable the tuning of a subtle balance between elastic and electrostatic energies, giving new platforms for enhanced and tunable functionalities. Here, highly tunable piezoelectricity is demonstrated in freestanding PbTiO3 membranes, by varying the ferroelectric domain structures from c-dominated to c/a and a domains via aftergrowth thermal treatment. Significantly, the piezoelectric coefficient of the c/a domain structure is enhanced by a factor of 2.5 compared with typical c domain PbTiO3. This work presents a new strategy to manipulate the piezoelectricity in ferroelectric membranes, highlighting their great potential for nano actuators, transducers, sensors and other NEMS device applications.
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Affiliation(s)
- Lu Han
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Xinrui Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Yingzhuo Lun
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yue Guan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Futao Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Shuhao Wang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Jiangfeng Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Chenyi Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zheng-Bin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Lisha Liu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Yaojin Wang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Peng Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
- Department of Physics, University of Warwick, Coventry CV4 7AL, U.K
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xiaoqing Pan
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
- Department of Materials Science and Engineering, University of California, Irvine, California 92697, United States
- Irvine Materials Research Institute, University of California, Irvine, California 92697, United States
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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12
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Luo Y, Wang Z, Chen Y, Qin M, Fan Z, Zeng M, Zhou G, Lu X, Gao X, Chen D, Liu JM. Strain Tuning of Negative Capacitance in Ferroelectric KNbO 3 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16902-16909. [PMID: 36966506 DOI: 10.1021/acsami.3c01866] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Ferroelectrics with negative capacitance effects can amplify the gate voltage in field-effect transistors to achieve low power operation beyond the limits of Boltzmann's Tyranny. The reduction of power consumption depends on the capacitance matching between the ferroelectric layer and gate dielectrics, which can be well controlled by adjusting the negative capacitance effect in ferroelectrics. However, it is a great challenge to experimentally tune the negative capacitance effect. Here, the observation of the tunable negative capacitance effect in ferroelectric KNbO3 through strain engineering is demonstrated. The magnitude of the voltage reduction and negative slope in polarization-electric field (P-E) curves as the symbol of negative capacitance effects can be controlled by imposing various epitaxial strains. The adjustment of the negative curvature region in the polarization-energy landscape under different strain states is responsible for the tunable negative capacitance. Our work paves the way for fabricating low-power devices and further reducing energy consumption in electronics.
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Affiliation(s)
- Yongjian Luo
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Chen
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Minghui Qin
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Min Zeng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xubing Lu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jun-Ming Liu
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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13
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Xu R, Crust KJ, Harbola V, Arras R, Patel KY, Prosandeev S, Cao H, Shao YT, Behera P, Caretta L, Kim WJ, Khandelwal A, Acharya M, Wang MM, Liu Y, Barnard ES, Raja A, Martin LW, Gu XW, Zhou H, Ramesh R, Muller DA, Bellaiche L, Hwang HY. Size-Induced Ferroelectricity in Antiferroelectric Oxide Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210562. [PMID: 36739113 DOI: 10.1002/adma.202210562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Revised: 01/06/2023] [Indexed: 05/17/2023]
Abstract
Despite extensive studies on size effects in ferroelectrics, how structures and properties evolve in antiferroelectrics with reduced dimensions still remains elusive. Given the enormous potential of utilizing antiferroelectrics for high-energy-density storage applications, understanding their size effects will provide key information for optimizing device performances at small scales. Here, the fundamental intrinsic size dependence of antiferroelectricity in lead-free NaNbO3 membranes is investigated. Via a wide range of experimental and theoretical approaches, an intriguing antiferroelectric-to-ferroelectric transition upon reducing membrane thickness is probed. This size effect leads to a ferroelectric single-phase below 40 nm, as well as a mixed-phase state with ferroelectric and antiferroelectric orders coexisting above this critical thickness. Furthermore, it is shown that the antiferroelectric and ferroelectric orders are electrically switchable. First-principle calculations further reveal that the observed transition is driven by the structural distortion arising from the membrane surface. This work provides direct experimental evidence for intrinsic size-driven scaling in antiferroelectrics and demonstrates enormous potential of utilizing size effects to drive emergent properties in environmentally benign lead-free oxides with the membrane platform.
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Affiliation(s)
- Ruijuan Xu
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27606, USA
| | - Kevin J Crust
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Physics, Stanford University, Stanford, CA, 94305, USA
| | - Varun Harbola
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Physics, Stanford University, Stanford, CA, 94305, USA
| | - Rémi Arras
- CEMES, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, F-31055, Toulouse, France
| | - Kinnary Y Patel
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Sergey Prosandeev
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Hui Cao
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Yu-Tsun Shao
- Department of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
| | - Piush Behera
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- School of Engineering, Brown University, Providence, RI, 02912, USA
| | - Woo Jin Kim
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Aarushi Khandelwal
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Melody M Wang
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Yin Liu
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27606, USA
| | - Edward S Barnard
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA
| | - Archana Raja
- The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - X Wendy Gu
- Department of Mechanical Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Hua Zhou
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Nanoengineering, Department of Physics and Astronomy, Rice University, Houston, TX, 77251, USA
| | - David A Muller
- Department of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Harold Y Hwang
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
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14
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Popescu DG, Husanu MA, Constantinou PC, Filip LD, Trupina L, Bucur CI, Pasuk I, Chirila C, Hrib LM, Stancu V, Pintilie L, Schmitt T, Teodorescu CM, Strocov VN. Experimental Band Structure of Pb(Zr,Ti)O 3 : Mechanism of Ferroelectric Stabilization. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205476. [PMID: 36592417 PMCID: PMC9951575 DOI: 10.1002/advs.202205476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Pb(Zr,Ti)O3 (PZT) is the most common ferroelectric (FE) material widely used in solid-state technology. Despite intense studies of PZT over decades, its intrinsic band structure, electron energy depending on 3D momentum k, is still unknown. Here, Pb(Zr0.2 Ti0.8 )O3 using soft-X-ray angle-resolved photoelectron spectroscopy (ARPES) is explored. The enhanced photoelectron escape depth in this photon energy range allows sharp intrinsic definition of the out-of-plane momentum k and thereby of the full 3D band structure. Furthermore, the problem of sample charging due to the inherently insulating nature of PZT is solved by using thin-film PZT samples, where a thickness-induced self-doping results in their heavy doping. For the first time, the soft-X-ray ARPES experiments deliver the intrinsic 3D band structure of PZT as well as the FE-polarization dependent electrostatic potential profile across the PZT film deposited on SrTiO3 and Lax SrMn1- x O3 substrates. The negative charges near the surface, required to stabilize the FE state pointing away from the sample (P+), are identified as oxygen vacancies creating localized in-gap states below the Fermi energy. For the opposite polarization state (P-), the positive charges near the surface are identified as cation vacancies resulting from non-ideal stoichiometry of the PZT film as deduced from quantitative XPS measurements.
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Affiliation(s)
| | | | | | - Lucian Dragos Filip
- National Institute of Materials PhysicsAtomistilor 405AMagurele077125Romania
| | - Lucian Trupina
- National Institute of Materials PhysicsAtomistilor 405AMagurele077125Romania
| | | | - Iuliana Pasuk
- National Institute of Materials PhysicsAtomistilor 405AMagurele077125Romania
| | - Cristina Chirila
- National Institute of Materials PhysicsAtomistilor 405AMagurele077125Romania
| | | | - Viorica Stancu
- National Institute of Materials PhysicsAtomistilor 405AMagurele077125Romania
| | - Lucian Pintilie
- National Institute of Materials PhysicsAtomistilor 405AMagurele077125Romania
| | - Thorsten Schmitt
- Swiss Light SourcePaul Scherrer InstituteVilligen‐PSI5232Switzerland
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15
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Gong L, Wei M, Yu R, Ohta H, Katayama T. Significant Suppression of Cracks in Freestanding Perovskite Oxide Flexible Sheets Using a Capping Oxide Layer. ACS NANO 2022; 16:21013-21019. [PMID: 36411060 DOI: 10.1021/acsnano.2c08649] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Flexible and functional perovskite oxide sheets with high orientation and crystallization are the next step in the development of next-generation devices. One promising synthesis method is the lift-off and transfer method using a water-soluble sacrificial layer. However, the suppression of cracks during lift-off is a crucial problem that remains unsolved. In this study, we demonstrated that this problem can be solved by depositing amorphous Al2O3 capping layers on oxide sheets. Using this simple method, over 20 mm2 of crack-free, deep-ultraviolet transparent electrode La:SrSnO3 and ferroelectric Ba0.75Sr0.25TiO3 flexible sheets were obtained. By contrast, the sheets without any capping layers broke. The obtained sheets showed considerable flexibility and high functionality. The La:SrSnO3 sheet simultaneously exhibited a wide bandgap (4.4 eV) and high electrical conductivity (>103 S/cm). The Ba0.75Sr0.25TiO3 sheet exhibited clear room-temperature ferroelectricity with a remnant polarization of 17 μC/cm2. Our findings provide a simple transfer method for obtaining large, crack-free, high-quality, single-crystalline sheets.
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Affiliation(s)
- Lizhikun Gong
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Mian Wei
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Rui Yu
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Hiromichi Ohta
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
| | - Tsukasa Katayama
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
- JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan
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16
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan,
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17
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Li Y, Xiang C, Chiabrera FM, Yun S, Zhang H, Kelly DJ, Dahm RT, Kirchert CKR, Cozannet TEL, Trier F, Christensen DV, Booth TJ, Simonsen SB, Kadkhodazadeh S, Jespersen TS, Pryds N. Stacking and Twisting of Freestanding Complex Oxide Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203187. [PMID: 35901262 DOI: 10.1002/adma.202203187] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2022] [Revised: 07/26/2022] [Indexed: 06/15/2023]
Abstract
The integration of dissimilar materials in heterostructures has long been a cornerstone of modern materials science-seminal examples are 2D materials and van der Waals heterostructures. Recently, new methods have been developed that enable the realization of ultrathin freestanding oxide films approaching the 2D limit. Oxides offer new degrees of freedom, due to the strong electronic interactions, especially the 3d orbital electrons, which give rise to rich exotic phases. Inspired by this progress, a new platform for assembling freestanding oxide thin films with different materials and orientations into artificial stacks with heterointerfaces is developed. It is shown that the oxide stacks can be tailored by controlling the stacking sequences, as well as the twist angle between the constituent layers with atomically sharp interfaces, leading to distinct moiré patterns in the transmission electron microscopy images of the full stacks. Stacking and twisting is recognized as a key degree of structural freedom in 2D materials but, until now, has never been realized for oxide materials. This approach opens unexplored avenues for fabricating artificial 3D oxide stacking heterostructures with freestanding membranes across a broad range of complex oxide crystal structures with functionalities not available in conventional 2D materials.
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Affiliation(s)
- Ying Li
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Faculty of Science, Wuhan University of Science and Technology, Wuhan, 430081, P. R. China
| | - Cheng Xiang
- Department of Physics, Centre for Nanostructured Graphene (CNG), Technical University of Denmark (DTU), Fysikvej, 309, Kgs. Lyngby, 2800, Denmark
| | - Francesco M Chiabrera
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Shinhee Yun
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Haiwu Zhang
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Daniel J Kelly
- DTU Nanolab, Technical University of Denmark (DTU), Fysikvej, 307, Kgs. Lyngby, 2800, Denmark
| | - Rasmus T Dahm
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Charline K R Kirchert
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Thomas E Le Cozannet
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Felix Trier
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Dennis V Christensen
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Timothy J Booth
- Department of Physics, Centre for Nanostructured Graphene (CNG), Technical University of Denmark (DTU), Fysikvej, 309, Kgs. Lyngby, 2800, Denmark
| | - Søren B Simonsen
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Shima Kadkhodazadeh
- DTU Nanolab, Technical University of Denmark (DTU), Fysikvej, 307, Kgs. Lyngby, 2800, Denmark
| | - Thomas S Jespersen
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
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18
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Eshete YA, Kang K, Kang S, Kim Y, Nguyen PL, Cho DY, Kim Y, Lee J, Cho S, Yang H. Atomic and Electronic Manipulation of Robust Ferroelectric Polymorphs. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202633. [PMID: 35730715 DOI: 10.1002/adma.202202633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Revised: 06/01/2022] [Indexed: 06/15/2023]
Abstract
Polymorphism allows the symmetry of the lattice and spatial charge distributions of atomically thin materials to be designed. While various polymorphs for superconducting, magnetic, and topological states have been extensively studied, polymorphic control is a challenge for robust ferroelectricity in atomically thin geometries. Here, the atomic and electric manipulation of ferroelectric polymorphs in Mo1- x Wx Te2 is reported. Atomic manipulation for polymorphic control via chemical pressure (substituting tungsten for molybdenum atoms) and charge density modulation can realize tunable polar lattice structures and robust ferroelectricity up to T = 400 K with a constant coercive field in an atomically thin material. Owing to the effective inversion symmetry breaking, the ferroelectric switching withstands a charge carrier density of up to 1.1 × 1013 cm-2 , developing an original diagram for ferroelectric switching in atomically thin materials.
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Affiliation(s)
| | - Kyungrok Kang
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea
| | - Seunghun Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Yejin Kim
- IPIT and Department of Physics, Jeonbuk National University, Jeonju, 54896, Korea
| | | | - Deok-Yong Cho
- IPIT and Department of Physics, Jeonbuk National University, Jeonju, 54896, Korea
| | - Yunseok Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan, 46241, Korea
| | - Suyeon Cho
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, ELTEC College of Engineering, Ewha Womans University, Seoul, 03760, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
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19
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Pesquera D, Fernández A, Khestanova E, Martin LW. Freestanding complex-oxide membranes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:383001. [PMID: 35779514 DOI: 10.1088/1361-648x/ac7dd5] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.
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Affiliation(s)
- David Pesquera
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Abel Fernández
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
| | | | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
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20
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Jiang Y, Parsonnet E, Qualls A, Zhao W, Susarla S, Pesquera D, Dasgupta A, Acharya M, Zhang H, Gosavi T, Lin CC, Nikonov DE, Li H, Young IA, Ramesh R, Martin LW. Enabling ultra-low-voltage switching in BaTiO 3. NATURE MATERIALS 2022; 21:779-785. [PMID: 35618823 DOI: 10.1038/s41563-022-01266-6] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2021] [Accepted: 04/20/2022] [Indexed: 06/15/2023]
Abstract
Single crystals of BaTiO3 exhibit small switching fields and energies, but thin-film performance is considerably worse, thus precluding their use in next-generation devices. Here, we demonstrate high-quality BaTiO3 thin films with nearly bulk-like properties. Thickness scaling provides access to the coercive voltages (<100 mV) and fields (<10 kV cm-1) required for future applications and results in a switching energy of <2 J cm-3 (corresponding to <2 aJ per bit in a 10 × 10 × 10 nm3 device). While reduction in film thickness reduces coercive voltage, it does so at the expense of remanent polarization. Depolarization fields impact polar state stability in thicker films but fortunately suppress the coercive field, thus driving a deviation from Janovec-Kay-Dunn scaling and enabling a constant coercive field for films <150 nm in thickness. Switching studies reveal fast speeds (switching times of ~2 ns for 25-nm-thick films with 5-µm-diameter capacitors) and a pathway to subnanosecond switching. Finally, integration of BaTiO3 thin films onto silicon substrates is shown. We also discuss what remains to be demonstrated to enable the use of these materials for next-generation devices.
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Affiliation(s)
- Y Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - E Parsonnet
- Department of Physics, University of California, Berkeley, CA, USA
| | - A Qualls
- Department of Physics, University of California, Berkeley, CA, USA
| | - W Zhao
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - S Susarla
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - D Pesquera
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Catalan Institute of Nanoscience and Nanotechnology, CSIC and BIST, Barcelona, Spain
| | - A Dasgupta
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - M Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - H Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - T Gosavi
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - C-C Lin
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - D E Nikonov
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - H Li
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - I A Young
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - R Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics, University of California, Berkeley, CA, USA
| | - L W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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21
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Fernandez A, Acharya M, Lee HG, Schimpf J, Jiang Y, Lou D, Tian Z, Martin LW. Thin-Film Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108841. [PMID: 35353395 DOI: 10.1002/adma.202108841] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.
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Affiliation(s)
- Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Han-Gyeol Lee
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jesse Schimpf
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Djamila Lou
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zishen Tian
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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22
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Mundt LE, Schelhas LT, Stone KH. Accurately Quantifying Stress during Metal Halide Perovskite Thin Film Formation. ACS APPLIED MATERIALS & INTERFACES 2022; 14:27791-27798. [PMID: 35670721 DOI: 10.1021/acsami.2c01654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The role of strain in metal halide perovskite (MHP) solar cells is still under investigation, showing both beneficial and detrimental effects on the device performance and stability. One crucial component to elucidating the impact of strain in the MHP absorber is a robust method of quantifying the amount of strain in the material. Here, we present a parametric refinement approach based on grazing incidence wide-angle X-ray scattering and demonstrate its use on quantifying strain during thermal annealing and subsequent cooling as a function of substrate and processing route. We use the analysis to reveal the impact of the cubic-to-tetragonal phase transition during cooling on the material's strain and discuss texture formation as a potential strain-relief mechanism. Thereby we present both a robust approach to quantify strain in MHPs and potential mechanisms to control strain in the film, opening the path for further investigations of strain in MHPs.
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Affiliation(s)
- Laura E Mundt
- SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, California 94025, United States
| | - Laura T Schelhas
- SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, California 94025, United States
- National Renewable Energy Laboratory, 15013 Denver W Pkwy, Golden, Colorado 80401, United States
| | - Kevin H Stone
- SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, California 94025, United States
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23
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Shi Q, Parsonnet E, Cheng X, Fedorova N, Peng RC, Fernandez A, Qualls A, Huang X, Chang X, Zhang H, Pesquera D, Das S, Nikonov D, Young I, Chen LQ, Martin LW, Huang YL, Íñiguez J, Ramesh R. The role of lattice dynamics in ferroelectric switching. Nat Commun 2022; 13:1110. [PMID: 35236832 PMCID: PMC8891289 DOI: 10.1038/s41467-022-28622-z] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Accepted: 02/03/2022] [Indexed: 11/10/2022] Open
Abstract
Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching. Reducing the switching energy of ferroelectric films remains an important goal. Here, the authors elucidate the fundamental role of lattice dynamics in ferroelectric switching on both freestanding BiFeO3 membranes and films clamped to a substrate.
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Affiliation(s)
- Qiwu Shi
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. .,College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China.
| | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA
| | - Natalya Fedorova
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg
| | - Ren-Ci Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Information and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China.,School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Alexander Qualls
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Xue Chang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - David Pesquera
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Sujit Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.,Material Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Dmitri Nikonov
- Components Research, Intel Corporation, Hillsboro, OR, 97142, USA
| | - Ian Young
- Components Research, Intel Corporation, Hillsboro, OR, 97142, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. .,Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg.,Department of Physics and Materials Science, University of Luxembourg, L-4422, Belvaux, Luxembourg
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. .,Department of Physics, University of California, Berkeley, CA, 94720, USA. .,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
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24
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Strain Engineering: A Pathway for Tunable Functionalities of Perovskite Metal Oxide Films. NANOMATERIALS 2022; 12:nano12050835. [PMID: 35269323 PMCID: PMC8912649 DOI: 10.3390/nano12050835] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 02/14/2022] [Accepted: 02/24/2022] [Indexed: 11/16/2022]
Abstract
Perovskite offers a framework that boasts various functionalities and physical properties of interest such as ferroelectricity, magnetic orderings, multiferroicity, superconductivity, semiconductor, and optoelectronic properties owing to their rich compositional diversity. These properties are also uniquely tied to their crystal distortion which is directly affected by lattice strain. Therefore, many important properties of perovskite can be further tuned through strain engineering which can be accomplished by chemical doping or simply element substitution, interface engineering in epitaxial thin films, and special architectures such as nanocomposites. In this review, we focus on and highlight the structure–property relationships of perovskite metal oxide films and elucidate the principles to manipulate the functionalities through different modalities of strain engineering approaches.
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25
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Dong F, Chen H, Dong Z, Du X, Chen W, Qi M, Shen J, Yang Y, Zhou T, Wu Z, Zhang Y. Mechanically induced enhancement and modulation of upconversion photoluminescence by bending lanthanide-doped perovskite oxides. OPTICS LETTERS 2022; 47:706-709. [PMID: 35103713 DOI: 10.1364/ol.448137] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2021] [Accepted: 12/30/2021] [Indexed: 06/14/2023]
Abstract
We report experimental studies of the bending strain impact on the upconversion processes in Yb3+, Er3+, and Mn2+ co-doped BaTiO3 (BTO) thin films with mica as the flexible substrate. Bending strain induces strong enhancement and modulation of the upconversion emission in doped BTO thin films. Because the unshielded 3d5 configuration of Mn2+ is more susceptible to crystal field changes, the introduction of an Mn2+ ion further promotes the strain-induced modulation effect. The upconversion intensity is amplified by six times at bending strain ε = 1.83% in BTO:Yb3+/Er3+/Mn2+ thin films. These results demonstrate the opportunity of rendering an upconversion emission through integrating lanthanide-doped ferroelectric films with flexible mica, especially by incorporating an Mn2+ ion.
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