Electrochemical Ionic Synapses: Progress and Perspectives

CMOS-Compatible Protonic Three-Terminal Memristor for Analog Synapse in Neuromorphic Computing

All-solid-state inorganic hydrogen-based three-terminal memristors (H-3TMs) suffer from poor retention, susceptibility to humidity and temperature, and the reliance on wet chemistry during fabrication, hindering their manufacturability within existing foundry processes. To address these, this study presents a CMOS-compatible H-3TM based on reversible intercalation and extraction of protons between the SiNx electrolyte and WOx channel. The protons are introduced via a straightforward hydrogen plasma treatment, promoting a compatible fabrication process with back-end-of-line integration. Experimental and simulation results indicate that the low proton transport tendency across the electrolyte/channel interface without an external electric field contributes to high retention performance. Furthermore, the device demonstrates linear potentiation and depression, 512 conductance states with a dynamic range of ≈40, low energy operation (≈73 fJ per write), and excellent overall device-to-device variation. Its analog properties are evaluated under the training and inference framework of MNIST and Fashion-MNIST datasets. The device achieved training and inference accuracies only 0.4% and 0.3% below the ideal benchmark on the F-MNIST dataset. This work offers a rational approach for future artificial synaptic device design and fabrication.

Nonlinear Ion Dynamics Enable Spike Timing Dependent Plasticity of Electrochemical Ionic Synapses

Programmable synaptic devices that can achieve timing-dependent weight updates are key components to implementing energy-efficient spiking neural networks (SNNs). Electrochemical ionic synapses (EIS) enable the programming of weight updates with very low energy consumption and low variability. Here, the strongly nonlinear kinetics of EIS, arising from nonlinear dynamics of ions and charge transfer reactions in solids, are leveraged to implement various forms of spike-timing-dependent plasticity (STDP). In particular, protons are used as the working ion. Different forms of the STDP function are deterministically predicted and emulated by a linear superposition of appropriately designed pre- and post-synaptic neuron signals. Heterogeneous STDP is also demonstrated within the array to capture different learning rules in the same system. STDP timescales are controllable, ranging from milliseconds to nanoseconds. The STDP resulting from EIS has lower variability than other hardware STDP implementations, due to the deterministic and uniform insertion of charge in the tunable channel material. The results indicate that the ion and charge transfer dynamics in EIS can enable bio-plausible synapses for SNN hardware with high energy efficiency, reliability, and throughput.

Electrochemical Random-Access Memory: Progress, Perspectives, and Opportunities

Non-von Neumann computing using neuromorphic systems based on analogue synaptic and neuronal elements has emerged as a potential solution to tackle the growing need for more efficient data processing, but progress toward practical systems has been stymied due to a lack of materials and devices with the appropriate attributes. Recently, solid state electrochemical ion-insertion, also known as electrochemical random access memory (ECRAM) has emerged as a promising approach to realize the needed device characteristics. ECRAM is a three terminal device that operates by tuning electronic conductance in functional materials through solid-state electrochemical redox reactions. This mechanism can be considered as a gate-controlled bulk modulation of dopants and/or phases in the channel. Early work demonstrating that ECRAM can achieve nearly ideal analogue synaptic characteristics has sparked tremendous interest in this approach. More recently, the realization that electrochemical ion insertion can be used to tune the electronic properties of many types of materials including transition metal oxides, layered two-dimensional materials, organic and coordination polymers, and that the changes in conductance can span orders of magnitude has further attracted interest in ECRAM as the basis for analogue synaptic elements for inference accelerators as well as for dynamical devices that can emulate a wide range of neuronal characteristics for implementation in analogue spiking neural networks. At its core, ECRAM shares many fundamental aspects with rechargeable batteries, where ion insertion materials are used extensively for their ability to reversibly store charge and energy. Computing applications, however, present drastically different requirements: systems will require many millions of devices, scaled down to tens of nanometers, all while achieving reliable electronic-state tuning at scaled-up rates and endurances, and with minimal energy dissipation and noise. In this review, we discuss the history, basic concepts, recent progress, as well as the challenges and opportunities for different types of ECRAM, broadly grouped by their primary mobile ionic charge carrier, including Li, protons, and oxygen vacancies.

Solid-State Oxide-Ion Synaptic Transistor for Neuromorphic Computing

Neuromorphic hardware facilitates rapid and energy-efficient training and operation of neural network models for artificial intelligence. However, existing analog in-memory computing devices, like memristors, continue to face significant challenges that impede their commercialization. These challenges include high variability due to their stochastic nature. Microfabricated electrochemical synapses offer a promising approach by functioning as an analog programmable resistor based on deterministic ion-insertion mechanisms. Here, an all-solid-state oxide-ion synaptic transistor is developed, employing Bi2V0.9Cu0.1O5.35 as a superior oxide-ion conductor electrolyte and La0.5Sr0.5FeO3-δ as a variable-resistance channel able to efficiently operate at temperatures compatible with conventional electronics. This transistor exhibits essential synaptic behaviors such as long- and short-term potentiation, paired-pulse facilitation, and post-tetanic potentiation, mimicking fundamental properties of biological neural networks. Key criteria for efficient neuromorphic computing are satisfied, including excellent linear and symmetric synaptic plasticity, low energy consumption per programming pulse, and high endurance with minimal cycle-to-cycle variation. Integrated into an artificial neural network (ANN) simulation for handwritten digit recognition, the presented synaptic transistor achieved a 96% accuracy on the Modified National Institute of Standards and Technology (MNIST) dataset, illustrating the effective implementation of the device in ANNs. These findings demonstrate the potential of oxide-ion based synaptic transistors for effective implementation in analog neuromorphic computing based on iontronics.

Hardware-Feasible and Efficient N-Type Organic Neuromorphic Signal Recognition via Reservoir Computing

Organic electrochemical synaptic transistors (OESTs), inspired by the biological nervous system, have garnered increasing attention due to their multifunctional applications in neuromorphic computing. However, the practical implementation of OESTs for signal recognition-particularly those utilizing n-type organic mixed ionic-electronic conductors (OMIECs)-still faces significant challenges at the hardware level. Here, a state-of-the-art small-molecule n-type OEST integrated within a physically simple and hardware feasible reservoir-computing (RC) framework for practical temporal signal recognition is presented. This integration is achieved by leveraging the adjustable synaptic properties of the n-OEST, which exhibits tunable nonlinear short-term memory, transitioning from volatility to nonvolatility, and demonstrating adaptive temporal specificity. Additionally, the nonvolatile OEST offers 256 conductance levels and a wide dynamic range (≈147) in long-term potentiation/depression (LTP/LTD), surpassing previously reported n-OESTs. By combining volatile n-OESTs as reservoirs with a single-layer perceptron readout composed of nonvolatile n-OEST networks, this physical RC system achieves substantial recognition accuracy for both handwritten-digit images (94.9%) and spoken digit (90.7%), along with ultrahigh weight efficiency. Furthermore, this system demonstrates outstanding accuracy (98.0%) by grouped RC in practical sleep monitoring, specifically in snoring recognition. Here, a reliable pathway for OMIEC-driven computing is presented to advance bioinspired hardware-based neuromorphic computing in the physical world.

Using the Transversal Admittance to Understand Organic Electrochemical Transistors

The transient behavior of organic electrochemical transistors (OECTs) is complex due to mixed ionic-electronic properties that play a central role in bioelectronics and neuromorphic applications. Some works applied impedance spectroscopy in OECTs for understanding transport properties and the frequency-dependent response of devices. The transversal admittance (drain current vs gate voltage) is used for sensing applications. However, a general theory of the transversal admittance, until now, has been incomplete. The derive a model that combines electronic motion along the channel and vertical ion diffusion by insertion from the electrolyte, depending on several features as the chemical capacitance, the diffusion coefficient of ions, and the electronic mobility. Based on transport and charge conservation equations, it is shown that the vertical impedance produces a standard result of diffusion in intercalation systems, while the transversal impedance contains the electronic parameters of hole accumulation and transport along the channel. The spectral shapes of drain and gate currents and the complex admittance spectra are established by reference to equivalent circuit models for the vertical and transversal impedances, that describe well the measurements of a PEDOT:PSS OECT. New insights are provided to the determination of mobility by the ratio between drain and gate currents.

Taming Prolonged Ionic Drift-Diffusion Dynamics for Brain-Inspired Computation

Recent advances in neural network-based computing have enabled human-like information processing in areas such as image classification and voice recognition. However, many neural networks run on conventional computers that operate at GHz clock frequency and consume considerable power compared to biological neural networks, such as human brains, which work with a much slower spiking rate. Although many electronic devices aiming to emulate the energy efficiency of biological neural networks have been explored, achieving long timescales while maintaining scalability remains an important challenge. In this study, a field-effect transistor based on the oxide semiconductor strontium titanate (SrTiO3) achieves leaky integration on a long timescale by leveraging the drift-diffusion of oxygen vacancies in this material. Experimental analysis and finite-element model simulations reveal the mechanism behind the leaky integration of the SrTiO3 transistor. With a timescale in the order of one second, which is close to that of biological neuron activity, this transistor is a promising component for biomimicking neuromorphic computing.

Two-Terminal Neuromorphic Devices for Spiking Neural Networks: Neurons, Synapses, and Array Integration

The ever-increasing volume of complex data poses significant challenges to conventional sequential global processing methods, highlighting their inherent limitations. This computational burden has catalyzed interest in neuromorphic computing, particularly within artificial neural networks (ANNs). In pursuit of advancing neuromorphic hardware, researchers are focusing on developing computation strategies and constructing high-density crossbar arrays utilizing history-dependent, multistate nonvolatile memories tailored for multiply-accumulate (MAC) operations. However, the real-time collection and processing of massive, dynamic data sets require an innovative computational paradigm akin to that of the human brain. Spiking neural networks (SNNs), representing the third generation of ANNs, are emerging as a promising solution for real-time spatiotemporal information processing due to their event-based spatiotemporal capabilities. The ideal hardware supporting SNN operations comprises artificial neurons, artificial synapses, and their integrated arrays. Currently, the structural complexity of SNNs and spike-based methodologies requires hardware components with biomimetic behaviors that are distinct from those of conventional memristors used in deep neural networks. These distinctive characteristics required for neuron and synapses devices pose significant challenges. Developing effective building blocks for SNNs, therefore, necessitates leveraging the intrinsic properties of the materials constituting each unit and overcoming the integration barriers. This review focuses on the progress toward memristor-based spiking neural network neuromorphic hardware, emphasizing the role of individual components such as memristor-based neurons, synapses, and array integration along with relevant biological insights. We aim to provide valuable perspectives to researchers working on the next generation of brain-like computing systems based on these foundational elements.

Advances in 2D Molybdenum Disulfide Transistors for Flexible and Wearable Electronics

As the trajectory of developing advanced electronics is shifting towards wearable electronics, various methods for implementing flexible and bendable devices capable of conforming to curvilinear surfaces have been widely investigated. In particular, achieving high-performance and stable flexible transistors remains a significant technical challenge, as transistors are fundamental components of electronics, playing a key role in overall performance. Among the wide range of candidates for flexible transistors, two-dimensional (2D) molybdenum disulfide (MoS2)-based transistors have emerged as potential solutions to address these challenges. Unlike other 2D materials, the 2D MoS2 offers numerous advantages, such as high carrier mobility, a tunable bandgap, superior mechanical strength, and exceptional chemical stability. This review emphasizes the novel techniques of the fabrication process, structure, and material to achieve flexible MoS2 transistor-based applications. Furthermore, the distinctive feature of this review is its focus on studies published in high-impact journals over the past decade, emphasizing their methods for developing MoS2 transistors into various applications. Finally, the review addresses technical challenges and provides an outlook for flexible and wearable MoS2 transistors.

Bio-Plausible Multimodal Learning with Emerging Neuromorphic Devices

Multimodal machine learning, as a prospective advancement in artificial intelligence, endeavors to emulate the brain's multimodal learning abilities with the objective to enhance interactions with humans. However, this approach requires simultaneous processing of diverse types of data, leading to increased model complexity, longer training times, and higher energy consumption. Multimodal neuromorphic devices have the capability to preprocess spatio-temporal information from various physical signals into unified electrical signals with high information density, thereby enabling more biologically plausible multimodal learning with low complexity and high energy-efficiency. Here, this work conducts a comparison between the expression of multimodal machine learning and multimodal neuromorphic computing, followed by an overview of the key characteristics associated with multimodal neuromorphic devices. The bio-plausible operational principles and the multimodal learning abilities of emerging devices are examined, which are classified into heterogeneous and homogeneous multimodal neuromorphic devices. Subsequently, this work provides a detailed description of the multimodal learning capabilities demonstrated by neuromorphic circuits and their respective applications. Finally, this work highlights the limitations and challenges of multimodal neuromorphic computing in order to hopefully provide insight into potential future research directions.

An evaluation of recent advancements in biological sensory organ-inspired neuromorphically tuned biomimetic devices

In the field of neuroscience, significant progress has been made regarding how the brain processes information. Unlike computer processors, the brain comprises neurons and synapses instead of memory blocks and transistors. Despite advancements in artificial neural networks, a complete understanding concerning brain functions remains elusive. For example, to achieve more accurate neuron replication, we must better understand signal transmission during synaptic processes, neural network tunability, and the creation of nanodevices featuring neurons and synapses. This study discusses the latest algorithms utilized in neuromorphic systems, the production of synaptic devices, differences between single and multisensory gadgets, recent advances in multisensory devices, and the promising research opportunities available in this field. We also explored the ability of an artificial synaptic device to mimic biological neural systems across diverse applications. Despite existing challenges, neuroscience-based computing technology holds promise for attracting scientists seeking to enhance solutions and augment the capabilities of neuromorphic devices, thereby fostering future breakthroughs in algorithms and the widespread application of cutting-edge technologies.

Switching Response in Organic Electrochemical Transistors by Ionic Diffusion and Electronic Transport

The switching response in organic electrochemical transistors (OECT) is a basic effect in which a transient current occurs in response to a voltage perturbation. This phenomenon has an important impact on different aspects of the application of OECT, such as the equilibration times, the hysteresis dependence on scan rates, and the synaptic properties for neuromorphic applications. Here we establish a model that unites vertical ion diffusion and horizontal electronic transport for the analysis of the time-dependent current response of OECTs. We use a combination of tools consisting of a physical analytical model; advanced 2D drift-diffusion simulation; and the experimental measurement of a poly(3-hexylthiophene) (P3HT) OECT. We show the reduction of the general model to simple time-dependent equations for the average ionic/hole concentration inside the organic film, which produces a Bernards-Malliaras conservation equation coupled with a diffusion equation. We provide a basic classification of the transient response to a voltage pulse, and the correspondent hysteresis effects of the transfer curves. The shape of transients is basically related to the main control phenomenon, either the vertical diffusion of ions during doping and dedoping, or the equilibration of electronic current along the channel length.

Thermally and Mechanically Stable Perovskite Artificial Synapse as Tuned by Phase Engineering for Efferent Neuromuscular Control

The doping of perovskites with mixed cations and mixed halides is an effective strategy to optimize phase stability. In this study, we introduce a cubic black phase perovskite CsyFA(1-y)Pb(BrxI(1-x))3 artificial synapse, using phase engineering by adjusting the cesium-bromide content. Low-bromine mixed perovskites are suitable to improve the electric pulse excitation sensitivity and stability of the device. Specifically, the low-bromine and low-cesium mixed perovskite (x = 0.15, y = 0.22) annealed at 373 K allows the device to maintain logic response even after 1000 mechanical flex/flat cycles. The device also shows good thermal stability up to temperatures of 333 K. We have demonstrated reflex-arc behavior with MCMHP synaptic units, capable of making sensory warnings at high frequency. This compositionally engineered, dual-mixed perovskite synaptic device provides significant potential for perceptual soft neurorobotic systems and prostheses.

Human somatosensory systems based on sensor-memory-integrated technology

As a representative artificial neural network (ANN) for incorporating sensing functions and memory functions into one system to achieve highly miniaturized and highly integrated devices or systems, artificial sensory systems (ASSs) can have a far-reaching influence on precise instrumentation, sensing, and automation engineering. Artificial sensory systems have enjoyed considerable progress in recent years, from low degree integrations to highly advanced sophisticated integrations, from single-modal perceptions to multimode-fused perceptions. However, there are issues around the large hardware area, power consumption, and communication bandwidth needed during the processes where multimodal sensing signals are converted into a digital mode before they can be processed by a digital processor. Therefore, deepening the research into sensory integration is of great importance. In this review, we briefly introduce fundamental knowledge about the memristor mechanism, describe some representative human somatosensory systems, and elucidate the relationship between the properties of memristor devices and the structure. The electronic character of the sensors, future prospects, and key challenges surrounding sensor-memory integrated technologies are also discussed.

Voltage Control of Multiple Electrochemical Processes during Lithium Ion Migration in NiFe2O4 Ferrite

Li-ion-based electric field control has been attracting significant attention, since it is able to penetrate deep into materials to exhibit diverse and controllable electrochemical processes, which offer more degrees of freedom to design multifunctional devices with low power consumption. As opposed to previous studies that mainly focused on single lithiation/delithiation mechanisms, we reveal three Li-ion modulation mechanisms in the same NiFe2O4 spinel ferrite by in situ magnetometry, i.e., intercalation, conversion, and space charge, which are respectively demonstrated in high, medium, and low voltage range. During the intercalation stage, the spinel structure is preserved, and a reversible modulation of magnetization arises from the charge transfer-induced variation of Fe valence states (Fe2+/Fe3+). Conversion-driven change in magnetization is the largest up to 89 emu g-1, due to the structural and magnetic phase transitions. Although both intercalation and conversion exhibit sluggish kinetics and long response times, the space charge manifests a faster switching speed and superior durability due to its interface electrostatic effect. These results not only provide a clear and comprehensive understanding on Li-based modulation mechanisms but also facilitate multifunctional and multiscenario applications, such as multistate memory, micromagnetic actuation, artificial synapse, and energy storage.

How to Correctly Analyze 2p X-ray Photoelectron Spectra of 3d Transition-Metal Oxides: Pitfalls and Principles

Nanomaterials based on transition-metal oxides (TMOs) that contain late 3d transition metals (e.g., Mn, Fe, Co, Ni) have diverse properties and functionality that are related to the oxidation state of constituent transition-metal (TM) cations. X-ray photoelectron spectroscopy (XPS) of TM 2p orbitals has been widely used to quantify the TM oxidation state of TMOs. However, 2p XPS spectra of late 3d TM cations usually have complicated shapes due to the charge transfer between the TM cation and oxygen ligands (anions), which makes the analysis highly nontrivial. In this article, we will examine the validity of commonly used analysis methods based on either peak fitting or the shift of binding energy (BE). The different origins of the BE shift in XPS spectra will be discussed. We will then introduce a model to reproduce the complex shapes of TM 2p spectra, based on fundamental parameters that describe the TMO electronic structure.

Ultrathin All-Solid-State MoS2-Based Electrolyte Gated Synaptic Transistor with Tunable Organic-Inorganic Hybrid Film

Electrolyte-gated synaptic transistors (EGSTs) have attracted considerable attention as synaptic devices owing to their adjustable conductance, low power consumption, and multi-state storage capabilities. To demonstrate high-density EGST arrays, 2D materials are recommended owing to their excellent electrical properties and ultrathin profile. However, widespread implementation of 2D-based EGSTs has challenges in achieving large-area channel growth and finding compatible nanoscale solid electrolytes. This study demonstrates large-scale process-compatible, all-solid-state EGSTs utilizing molybdenum disulfide (MoS2) channels grown through chemical vapor deposition (CVD) and sub-30 nm organic-inorganic hybrid electrolyte polymers synthesized via initiated chemical vapor deposition (iCVD). The iCVD technique enables precise modulation of the hydroxyl group density in the hybrid matrix, allowing the modulation of proton conduction, resulting in adjustable synaptic performance. By leveraging the tunable iCVD-based hybrid electrolyte, the fabricated EGSTs achieve remarkable attributes: a wide on/off ratio of 109, state retention exceeding 103, and linear conductance updates. Additionally, the device exhibits endurance surpassing 5 × 104 cycles, while maintaining a low energy consumption of 200 fJ/spike. To evaluate the practicality of these EGSTs, a subset of devices is employed in system-level simulations of MNIST handwritten digit recognition, yielding a recognition rate of 93.2%.

Ultrahigh Oxygen Ion Mobility in Ferroelectric Hafnia

Ferroelectrics and ionic conductors are important functional materials, each supporting a plethora of applications in information and energy technology. The underlying physics governing their functional properties is ionic motion, and yet studies of ferroelectrics and ionic conductors are often considered separate fields. Based on first-principles calculations and deep-learning-assisted large-scale molecular dynamics simulations, we report ferroelectric-switching-promoted oxygen ion transport in HfO_{2}, a wide-band-gap insulator with both ferroelectricity and ionic conductivity. Applying a unidirectional bias can activate multiple switching pathways in ferroelectric HfO_{2}, leading to polar-antipolar phase cycling that appears to contradict classical electrodynamics. This apparent conflict is resolved by the geometric-quantum-phase nature of electric polarization that carries no definite direction. Our molecular dynamics simulations demonstrate bias-driven successive ferroelectric transitions facilitate ultrahigh oxygen ion mobility at moderate temperatures, highlighting the potential of combining ferroelectricity and ionic conductivity for the development of advanced materials and technologies.

Differentiating Oxygen Exchange Reaction Mechanisms across Phase Boundaries

Triggering phase transitions by controlling the anion stoichiometry is an effective method of tuning the electrocatalytic activity of the functional oxides. However, understanding the potential differences in the reaction mechanism(s) of different phases requires the accurate mapping of phase boundaries during the electrochemical reactions, which can be quite challenging. In this work, we have established a feasible electrochemical method based on the measurement of chemical capacitance to resolve the critical stoichiometry at phase boundaries under operando conditions. We select a simple binary oxide PrOx as a proof-of-principle model system, which shows excellent activity for high-temperature oxygen incorporation and evolution reactions (OIR/OER). We show that the phase transition can be sensitively probed by quantifying the chemical capacitance, which can be further used for differentiating the OIR/OER mechanisms across the phase boundary of PrOx. Therefore, our findings provide a new framework for exploring phase engineering as a tool for the design of electrocatalysts.

Interface-type tunable oxygen ion dynamics for physical reservoir computing

Reservoir computing can more efficiently be used to solve time-dependent tasks than conventional feedforward network owing to various advantages, such as easy training and low hardware overhead. Physical reservoirs that contain intrinsic nonlinear dynamic processes could serve as next-generation dynamic computing systems. High-efficiency reservoir systems require nonlinear and dynamic responses to distinguish time-series input data. Herein, an interface-type dynamic transistor gated by an Hf0.5Zr0.5O2 (HZO) film was introduced to perform reservoir computing. The channel conductance of Mott material La0.67Sr0.33MnO3 (LSMO) can effectively be modulated by taking advantage of the unique coupled property of the polarization process and oxygen migration in hafnium-based ferroelectrics. The large positive value of the oxygen vacancy formation energy and negative value of the oxygen affinity energy resulted in the spontaneous migration of accumulated oxygen ions in the HZO films to the channel, leading to the dynamic relaxation process. The modulation of the channel conductance was found to be closely related to the current state, identified as the origin of the nonlinear response. In the time series recognition and prediction tasks, the proposed reservoir system showed an extremely low decision-making error. This work provides a promising pathway for exploiting dynamic ion systems for high-performance neural network devices.

Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and Challenges

Artificial neurons and synapses are considered essential for the progress of the future brain-inspired computing, based on beyond von Neumann architectures. Here, a discussion on the common electrochemical fundamentals of biological and artificial cells is provided, focusing on their similarities with the redox-based memristive devices. The driving forces behind the functionalities and the ways to control them by an electrochemical-materials approach are presented. Factors such as the chemical symmetry of the electrodes, doping of the solid electrolyte, concentration gradients, and excess surface energy are discussed as essential to understand, predict, and design artificial neurons and synapses. A variety of two- and three-terminal memristive devices and memristive architectures are presented and their application for solving various problems is shown. The work provides an overview of the current understandings on the complex processes of neural signal generation and transmission in both biological and artificial cells and presents the state-of-the-art applications, including signal transmission between biological and artificial cells. This example is showcasing the possibility for creating bioelectronic interfaces and integrating artificial circuits in biological systems. Prospectives and challenges of the modern technology toward low-power, high-information-density circuits are highlighted.

Tunable Intervalence Charge Transfer in Ruthenium Prussian Blue Analog Enables Stable and Efficient Biocompatible Artificial Synapses

Emerging concepts for neuromorphic computing, bioelectronics, and brain-computer interfacing inspire new research avenues aimed at understanding the relationship between oxidation state and conductivity in unexplored materials. This report expands the materials playground for neuromorphic devices to include a mixed valence inorganic 3D coordination framework, a ruthenium Prussian blue analog (RuPBA), for flexible and biocompatible artificial synapses that reversibly switch conductance by more than four orders of magnitude based on electrochemically tunable oxidation state. The electrochemically tunable degree of mixed valency and electronic coupling between N-coordinated Ru sites controls the carrier concentration and mobility, as supported by density functional theory computations and application of electron transfer theory to in situ spectroscopy of intervalence charge transfer. Retention of programmed states is improved by nearly two orders of magnitude compared to extensively studied organic polymers, thus reducing the frequency, complexity, and energy costs associated with error correction schemes. This report demonstrates dopamine-mediated plasticity of RuPBA synapses and biocompatibility of RuPBA with neuronal cells, evoking prospective application for brain-computer interfacing.