1
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Kim IJ, Lee JS. Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors. SCIENCE ADVANCES 2024; 10:eadn1345. [PMID: 38848373 PMCID: PMC11160465 DOI: 10.1126/sciadv.adn1345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 05/06/2024] [Indexed: 06/09/2024]
Abstract
Ferroelectric transistors based on hafnia-based ferroelectrics exhibit tremendous potential as next-generation memories owing to their high-speed operation and low power consumption. Nevertheless, these transistors face limitations in terms of memory window, which directly affects their ability to support multilevel characteristics in memory devices. Furthermore, the absence of an efficient operational technique capable of achieving multilevel characteristics has hindered their development. To address these challenges, we present a gate stack engineering method and an efficient operational approach for ferroelectric transistors to achieve 16-level data per cell operation. By using the suggested engineering method, we demonstrate the attainment of a substantial memory window of 10 V without increasing the device area. Additionally, we propose a displacement current control method, facilitating one-shot programming to the desired state. Remarkably, we suggest the compatibility of these proposed methods with three-dimensional (3D) structures. This study underscores the potential of ferroelectric transistors for next-generation 3D memory applications.
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Affiliation(s)
- Ik-Jyae Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
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2
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Wu Y, Yang H, He Q, Jiang H, Chen W, Tan C, Zhang Y, Zheng Y. The Investigation of Neuromimetic Dynamics in Ferroelectrics via In Situ TEM. NANO LETTERS 2024. [PMID: 38825790 DOI: 10.1021/acs.nanolett.4c01626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The core task of neuromorphic devices is to effectively simulate the behavior of neurons and synapses. Based on the functionality of ferroelectric domains with the advantages of low power consumption and high-speed response, great progress has been made in realizing neuromimetic behaviors such as ferroelectric synaptic devices. However, the correlation between the ferroelectric domain dynamics and neuromimetic behavior remains unclear. Here, we reveal the correlation between domain/domain wall dynamics and neuromimetic behaviors from a microscopic perspective in real-time by using high temporal and spatial resolution in situ transmission electron microscopy. Furthermore, we propose utilizing ferroelectric microstructures for the simultaneous simulation of neuronal and synaptic plasticity, which is expected to improve the integration and performance of ferroelectric neuromorphic devices. We believe that this work to study neuromimetic behavior from the perspective of domain dynamics is instructive for the development of ferroelectric neuromorphic devices.
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Affiliation(s)
- Yiwei Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Qian He
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - He Jiang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Congbing Tan
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Hunan Provincial Key Laboratory of Intelligent Sensors and Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
| | - Yi Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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3
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Zakrzewski J, Liberka M, Wang J, Chorazy S, Ohkoshi SI. Optical Phenomena in Molecule-Based Magnetic Materials. Chem Rev 2024; 124:5930-6050. [PMID: 38687182 PMCID: PMC11082909 DOI: 10.1021/acs.chemrev.3c00840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Since the last century, we have witnessed the development of molecular magnetism which deals with magnetic materials based on molecular species, i.e., organic radicals and metal complexes. Among them, the broadest attention was devoted to molecule-based ferro-/ferrimagnets, spin transition materials, including those exploring electron transfer, molecular nanomagnets, such as single-molecule magnets (SMMs), molecular qubits, and stimuli-responsive magnetic materials. Their physical properties open the application horizons in sensors, data storage, spintronics, and quantum computation. It was found that various optical phenomena, such as thermochromism, photoswitching of magnetic and optical characteristics, luminescence, nonlinear optical and chiroptical effects, as well as optical responsivity to external stimuli, can be implemented into molecule-based magnetic materials. Moreover, the fruitful interactions of these optical effects with magnetism in molecule-based materials can provide new physical cross-effects and multifunctionality, enriching the applications in optical, electronic, and magnetic devices. This Review aims to show the scope of optical phenomena generated in molecule-based magnetic materials, including the recent advances in such areas as high-temperature photomagnetism, optical thermometry utilizing SMMs, optical addressability of molecular qubits, magneto-chiral dichroism, and opto-magneto-electric multifunctionality. These findings are discussed in the context of the types of optical phenomena accessible for various classes of molecule-based magnetic materials.
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Affiliation(s)
- Jakub
J. Zakrzewski
- Faculty
of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland
- Doctoral
School of Exact and Natural Sciences, Jagiellonian
University, Lojasiewicza
11, 30-348 Krakow, Poland
| | - Michal Liberka
- Faculty
of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland
- Doctoral
School of Exact and Natural Sciences, Jagiellonian
University, Lojasiewicza
11, 30-348 Krakow, Poland
| | - Junhao Wang
- Department
of Materials Science, Faculty of Pure and Applied Science, University of Tsukuba, 1-1-1 Tonnodai, Tsukuba, Ibaraki 305-8573, Japan
| | - Szymon Chorazy
- Faculty
of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387 Krakow, Poland
| | - Shin-ichi Ohkoshi
- Department
of Chemistry, School of Science, The University
of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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4
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Lee S, Cho Y, Heo S, Bae JH, Kang IM, Kim K, Lee WY, Jang J. UV/Ozone-Treated and Sol-Gel-Processed Y 2O 3 Insulators Prepared Using Gelation-Delaying Precursors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:791. [PMID: 38727385 PMCID: PMC11085385 DOI: 10.3390/nano14090791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Revised: 04/23/2024] [Accepted: 04/30/2024] [Indexed: 05/12/2024]
Abstract
In this study, a Y2O3 insulator was fabricated via the sol-gel process and the effect of precursors and annealing processes on its electrical performance was studied. Yttrium(III) acetate hydrate, yttrium(III) nitrate tetrahydrate, yttrium isopropoxide oxide, and yttrium(III) tris (isopropoxide) were used as precursors, and UV/ozone treatment and high-temperature annealing were performed to obtain Y2O3 films from the precursors. The structure and surface morphologies of the films were characterized via grazing-incidence X-ray diffraction and scanning probe microscopy. Chemical component analysis was performed via X-ray spectroscopy. Electrical insulator characteristics were analyzed based on current density versus electrical field data and frequency-dependent dielectric constants. The Y2O3 films fabricated using the acetate precursor and subjected to the UV/ozone treatment showed a uniform and flat surface morphology with the lowest number of oxygen vacancy defects and unwanted byproducts. The corresponding fabricated capacitors showed the lowest current density (Jg) value of 10-8 A/cm2 at 1 MV/cm and a stable dielectric constant in a frequency range of 20 Hz-100 KHz. At 20 Hz, the dielectric constant was 12.28, which decreased to 10.5 at 105 Hz. The results indicate that high-quality, high-k insulators can be fabricated for flexible electronics using suitable precursors and the suggested low-temperature fabrication methods.
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Affiliation(s)
- Sangwoo Lee
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (S.L.); (S.H.); (J.-H.B.); (I.-M.K.)
| | - Yoonjin Cho
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (S.L.); (S.H.); (J.-H.B.); (I.-M.K.)
| | - Seongwon Heo
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (S.L.); (S.H.); (J.-H.B.); (I.-M.K.)
| | - Jin-Hyuk Bae
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (S.L.); (S.H.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - In-Man Kang
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (S.L.); (S.H.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Kwangeun Kim
- School of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea;
| | - Won-Yong Lee
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (S.L.); (S.H.); (J.-H.B.); (I.-M.K.)
- The Institute of Electronic Technology, Kyungpook National University, Daegu 41566, Republic of Korea
| | - Jaewon Jang
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea; (S.L.); (S.H.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
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5
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Kanegawa S, Wu SQ, Zhou Z, Shiota Y, Nakanishi T, Yoshizawa K, Sato O. Polar Crystals Using Molecular Chirality: Pseudosymmetric Crystallization toward Polarization Switching Materials. J Am Chem Soc 2024. [PMID: 38604977 DOI: 10.1021/jacs.4c02882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/13/2024]
Abstract
Polar compounds with switchable polarization properties are applicable in various devices such as ferroelectric memory and pyroelectric sensors. However, a strategy to prepare polar compounds has not been established. We report a rational synthesis of a polar CoGa crystal using chiral cth ligands (SS-cth and RR-cth, cth = 5,7,7,12,14,14-hexamethyl-1,4,8,11-tetraazacyclotetradecane). Both the original homo metal Co crystal and Ga crystal exhibit a centrosymmetric isostructure, where the dipole moment of metal complexes with the SS-cth ligand and those with the RR-cth ligand are canceled out. To obtain a polar compound, the Co valence tautomeric complex with SS-cth in the homo metal Co crystal is replaced with the Ga complex with SS-cth by mixing Co valence tautomeric complexes with RR-cth and Ga complexes with SS-cth. The CoGa crystal exhibits polarization switching between the pseudononpolar state at a low temperature and the polar state at a high temperature because only Co complexes exhibit changes in electric dipole moment due to metal-to-ligand charge transfer. Following the same strategy, the polarization-switchable CoZn complex was synthesized. The CoZn crystal exhibits polarization switching between the polar state at a low temperature and the pseudononpolar state at a high temperature, which is the opposite temperature dependence to that of the CoGa crystal. These results revealed that the polar crystal can be synthesized by design, using a chiral ligand. Moreover, our method allows for the control of temperature-dependent polarization changes, which contrasts with typical ferroelectric compounds, in which the polar ferroelectric phase typically occurs at low temperatures.
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Affiliation(s)
- Shinji Kanegawa
- Institute for Materials Chemistry and Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395, Japan
- Integrated Research Consortium on Chemical Sciences, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Shu-Qi Wu
- Institute for Materials Chemistry and Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395, Japan
- Integrated Research Consortium on Chemical Sciences, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Ziqi Zhou
- Institute for Materials Chemistry and Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395, Japan
| | - Yoshihito Shiota
- Institute for Materials Chemistry and Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395, Japan
- Integrated Research Consortium on Chemical Sciences, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Takumi Nakanishi
- Institute for Materials Chemistry and Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395, Japan
| | - Kazunari Yoshizawa
- Institute for Materials Chemistry and Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395, Japan
- Integrated Research Consortium on Chemical Sciences, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Osamu Sato
- Institute for Materials Chemistry and Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395, Japan
- Integrated Research Consortium on Chemical Sciences, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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Song CM, Kim D, Lee S, Kwon HJ. Ferroelectric 2D SnS 2 Analog Synaptic FET. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308588. [PMID: 38375965 DOI: 10.1002/advs.202308588] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 01/25/2024] [Indexed: 02/21/2024]
Abstract
In this study, the development and characterization of 2D ferroelectric field-effect transistor (2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D semiconductors. The fabricated device demonstrated multi-level data storage capabilities. It successfully emulated essential biological characteristics, including excitatory/inhibitory postsynaptic currents (EPSC/IPSC), Pair-Pulse Facilitation (PPF), and Spike-Timing Dependent Plasticity (STDP). Extensive endurance tests ensured robust stability (107 switching cycles, 105 s (extrapolated to 10 years)), excellent linearity, and high Gmax/Gmin ratio (>105), all of which are essential for realizing multi-level data states (>7-bit operation). Beyond mimicking synaptic functionalities, the device achieved a pattern recognition accuracy of ≈94% on the Modified National Institute of Standards and Technology (MNIST) handwritten dataset when incorporated into a neural network, demonstrating its potential as an effective component in neuromorphic systems. The successful implementation of the 2D FeFET device paves the way for the development of high-efficiency, ultralow-power neuromorphic hardware which is in sub-femtojoule (48 aJ/spike) and fast response (1 µs), which is 104 folds faster than human synapse (≈10 ms). The results of the research underline the potential of nanoscale ferroelectric and 2D materials in building the next generation of artificial intelligence technologies.
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Affiliation(s)
- Chong-Myeong Song
- Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea
| | - Dongha Kim
- Department of Physics and Chemistry, DGIST, Daegu, 42988, South Korea
| | - Shinbuhm Lee
- Department of Physics and Chemistry, DGIST, Daegu, 42988, South Korea
| | - Hyuk-Jun Kwon
- Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea
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7
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Sambe K, Takeda T, Hoshino N, Matsuda W, Miura R, Tsujita K, Maruyama S, Yamamoto S, Seki S, Matsumoto Y, Akutagawa T. Ferroelectric Organic Semiconductor: [1]Benzothieno[3,2- b][1]benzothiophene-Bearing Hydrogen-Bonding -CONHC 14H 29 Chain. ACS APPLIED MATERIALS & INTERFACES 2023; 15:58711-58722. [PMID: 38055344 DOI: 10.1021/acsami.3c14476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
An alkylamide-substituted [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivative of BTBT-CONHC14H29 (1) and C8H17-BTBT-CONHC14H29 (2) were prepared to design the multifunctional organic materials, which can show both ferroelectric and semiconducting properties. Single-crystal X-ray structural analyses of short-chain (-CONHC3H7) derivatives revealed the coexistence of two-dimensional (2D) electronic band structures brought from a herringbone arrangement of the BTBT π core and the one-dimensional (1D) hydrogen-bonding chains of -CONHC3H7 chains. The thin films of 1 and 2 fabricated on the Si/SiO2 substrate surface have monolayer and bilayer structures, respectively, resulting in conducting layers parallel to the substrate surface, which is suitable for a channel layer of organic field-effect transistors (OFETs). The thin film of 1 indicated a hole mobility μFET = 2.4 × 10-5 cm2 V-1 s-1 and threshold voltage VTh = - 29 V, whereas that of 2 showed a μFET = 2.1 × 10-2 cm2 V-1 s-1 and threshold voltage VTh = -9.7 V. Both 1 and 2 formed the smectic E (SmE) phase above 410 and 369 K, respectively, where the existence of a hole transport pathway was confirmed in the SmE phase. The ferroelectric hysteresis behavior was observed in bulk 1 and 2 in the polarization-electric field (P-E) curves at the SmE phase. 1 showed the remanent polarization Pr = 2.3 μC cm-2 and coercive electric field Ec = 5.2 V μm-1, whereas the Pr and Ec of 2 were 3.4 μC cm-2 and 7.0 V μm-1 at the conditions of 453 K and 1 Hz. Introduction of alkylamide units into the BTBT π core has the potential to develop the external stimulus-responsive organic semiconductors brought from both ferroelectricity and semiconducting properties.
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Affiliation(s)
- Kohei Sambe
- Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579, Japan
| | - Takashi Takeda
- Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579, Japan
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
- Department of Chemistry, Faculty of Science, Shinshu University, 3-1-1 Asahi, Matsumoto 390-8621, Japan
| | - Norihisa Hoshino
- Department of Materials Science and Technology, Faculty of Engineering, Niigata University, 8050 Ikarashi-2, Niigata 9050-2181, Japan
| | - Wakana Matsuda
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
| | - Riku Miura
- Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579, Japan
| | - Kanae Tsujita
- Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579, Japan
| | - Shingo Maruyama
- Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579, Japan
| | - Shunsuke Yamamoto
- Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579, Japan
| | - Shu Seki
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
| | - Yuji Matsumoto
- Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579, Japan
| | - Tomoyuki Akutagawa
- Graduate School of Engineering, Tohoku University, 6-6-07 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579, Japan
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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8
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Maity K, Dayen JF, Doudin B, Gumeniuk R, Kundys B. Single Wavelength Operating Neuromorphic Device Based on a Graphene-Ferroelectric Transistor. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55948-55956. [PMID: 37983566 DOI: 10.1021/acsami.3c10010] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optical and monochromatic way of neuromorphic signal processing for brain-inspired functions, eliminating the need for electrical pulses. Multilevel synaptic potentiation-depression cycles are successfully achieved optically by leveraging photovoltaic charge generation and polarization within the photoferroelectric substrate interfaced with the graphene sensor. Furthermore, the demonstrated low-power prototype device is able to reproduce exact signal profile of brain tissues yet with more than 2 orders of magnitude faster response. The reported properties should trigger all-optical and low power artificial neuromorphic development based on photoferroelectric structures.
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Affiliation(s)
- Krishna Maity
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
| | - Jean-François Dayen
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
| | - Bernard Doudin
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
| | - Roman Gumeniuk
- Institut für Experimentelle Physik, TU Bergakademie Freiberg, Leipziger Str. 23, Freiberg 09596, Germany
| | - Bohdan Kundys
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, Strasbourg F-67000, France
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9
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Kim IJ, Lee JS. Dopant Engineering of Hafnia-Based Ferroelectrics for Long Data Retention and High Thermal Stability. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2306871. [PMID: 37967323 DOI: 10.1002/smll.202306871] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Revised: 10/30/2023] [Indexed: 11/17/2023]
Abstract
Hafnia-based ferroelectrics have gained much attention because they can be used in highly scaled, advanced complementary metal-oxide semiconductor (CMOS) memory devices. However, thermal stability should be considered when integrating hafnia-based ferroelectric transistors in advanced CMOS devices, as they can be exposed to high-temperature processes. This work proposed that doping of Al in hafnia-based ferroelectric material can lead to high thermal stability. A ferroelectric capacitor based on Al-doped hafnia, which can be used for one-transistor-one-capacitor applications, exhibits stable operation even after annealing at 900 °C. Moreover, it demonstrates that the ferroelectric transistors based on Al-doped hafnia for one-transistor applications, such as ferroelectric NAND, retain their memory states for 10 years at 100 °C. This study presents a practical method to achieve thermally stable ferroelectric memories capable of enduring high-temperature processes and operation conditions.
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Affiliation(s)
- Ik-Jyae Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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10
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Wei H, Xu Z, Ni Y, Yang L, Sun L, Gong J, Zhang S, Qu S, Xu W. Mixed-Dimensional Nanoparticle-Nanowire Channels for Flexible Optoelectronic Artificial Synapse with Enhanced Photoelectric Response and Asymmetric Bidirectional Plasticity. NANO LETTERS 2023; 23:8743-8752. [PMID: 37698378 DOI: 10.1021/acs.nanolett.3c02836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
A mixed-dimensional dual-channel synaptic transistor composed of inorganic nanoparticles and organic nanowires was fabricated to expand the photoelectric gain range. The device can actualize the sensitization features of the nociceptor and shows improved responsiveness to visible light. Under electrical pulses with different polarities, the apparatus exhibits reconfigurable asymmetric bidirectional plasticity. Moreover, the devices demonstrate good operational tolerance and mechanical stability, retaining more than 60% of their maximum responsiveness after 100 consecutive/bidirectional and 1000 flex/flat operations. The improved photoelectric response of the device endows a high image recognition accuracy of greater than 80%. Asymmetric bidirectional plasticity is used as punishment/reward in a psychological experiment to emulate the improvement of learning motivation and enables real-time forward and backward deflection (+7 and -25°) of artificial muscle. The mixed-dimensional optoelectronic artificial synapses with switchable behavior and electron/hole transport type have important prospects for neuromorphic processing and artificial somatosensory nerves.
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Affiliation(s)
- Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
- Institutes of Physical Science and Information Technology, School of Materials Science and Engineering, Key Laboratory of Structure and Functional Regulation of Hybrid Materials, Anhui University, Ministry of Education, Hefei 230601, People's Republic of China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Lin Sun
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
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11
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Wang Y, Liu S, Luo Z, Gan H, Wang H, Li J, Du X, Zhao H, Shen S, Yin Y, Li X. Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf 0.5Zr 0.5O 2 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:42764-42773. [PMID: 37655492 DOI: 10.1021/acsami.3c08163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
The emergence of complementary metal-oxide semiconductor (CMOS)-compatible HfO2-based ferroelectric materials provides a promising way to achieve ferroelectric field-effect transistors (FeFETs) with a steep subthreshold swing (SS) reduced to below the Boltzmann thermodynamics limit (∼60 mV/dec at room temperature), which has important implications for lowering power consumption. In this work, a metal-oxide-semiconductor field-effect transistor (MOSFET) is connected with Hf0.5Zr0.5O2 (HZO)-based ferroelectric capacitors with different capacitances. By adjusting the capacitance of ferroelectric capacitors, an ultralow SS of ∼0.34 mV/dec in HfO2-based FeFETs can be achieved. More interestingly, by designing the sweeping voltage sequences, the SS can be adjusted to be 0 mV/dec with the drain current ranging over six orders of magnitude, and the threshold voltage for turning on the MOSFET can be further reduced. The manipulated SS could be attributed to the evolution of ferroelectric switching. Our work contributes to understanding the origin of ultralow SS in ferroelectric MOSFETs and the realization of low-power devices.
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Affiliation(s)
- Yuchen Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Si Liu
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhen Luo
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Hui Gan
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - He Wang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jiachen Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xinzhe Du
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Haoyu Zhao
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Shengchun Shen
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Yuewei Yin
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xiaoguang Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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12
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Liu Z, Sun Y, Ding Y, Li M, Liu X, Liu Z, Chen Z. Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing. J Phys Chem Lett 2023:6784-6791. [PMID: 37478384 DOI: 10.1021/acs.jpclett.3c01463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/23/2023]
Abstract
With the continuous scaling down of the modern integrated circuits, conventional metal-oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal effects such as enhanced short-channel effects. Recently, emerging two-dimensional (2D) ferroelectrics have demonstrated their ability to maintain ferroelectricity at the nanoscale and have shown superior properties compared to three-dimensional ferroelectrics. Here, we report a ferroelectric field effect transistor composed of all 2D van der Waals (vdWs) heterostructures and provide a comprehensive study of the modulation of ferroelectric polarization on the carrier transport properties. Remarkably, the ferroelectric polarization allowed for achieving an ultralow subthreshold swing of just 26 mV/dec and a high carrier mobility of up to 72.3 cm2/(V s) at a smaller drain voltage of 10 mV. These impressive characteristics offer new insights into evaluating the regulatory effect of ferroelectric polarization on the electrical properties of all 2D vdWs heterostructures.
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Affiliation(s)
- Zhongyang Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yilin Sun
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics & Microsystems, Chongqing 401332, China
| | - Yingtao Ding
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Mingjie Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiao Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhifang Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhiming Chen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
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