Sb2Se3-Sensitized Inorganic-Organic Heterojunction Solar Cells Fabricated Using a Single-Source Precursor

Heavy pnictogen chalcohalides for efficient, stable, and environmentally friendly solar cell applications

Solar cell technology is an effective solution for addressing climate change and the energy crisis. Therefore, many researchers have investigated various solar cell absorbers that convert Sunlight into electric energy. Among the different materials researched, heavy pnictogen chalcohalides comprising heavy pnictogen cations, such as Bi³⁺and Sb³⁺, and chalcogen-halogen anions have recently been revisited as emerging solar absorbers because of their potential for efficient, stable, and low-toxicity solar cell applications. This review explores the recent progress in the applications of heavy pnictogen chalcohalides, including oxyhalides and mixed chalcohalides, in solar cells. We categorize them into material types based on their common structural characteristics and describe their up-to-date developments in solar cell applications. Finally, we discuss their material imitations, challenges for further development, and possible strategies for overcoming them.

24% Efficient, Simple ZnSe/Sb2Se3 Heterojunction Solar Cell: An Analysis of PV Characteristics and Defects

In this work, a new wide-band-gap n-type buffer layer, ZnSe, has been proposed and investigated for an antimony selenide (Sb₂Se₃)-based thin-film solar cell. The study aims to boost the Sb₂Se₃-based solar cell's performance by incorporating a cheap, widely accessible ZnSe buffer layer into the solar cell structure as a replacement for the CdS layer. Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) simulation software is used to thoroughly analyze the photovoltaic parameters of the heterojunction structure ZnSe/Sb₂Se₃. It includes open circuit voltage (V _OC), short-circuit current density (J _SC), fill factor (FF), power conversion efficiency (PCE), and external quantum efficiency (EQE). The absorber layer (Sb₂Se₃) thickness is adjusted from 0.5 to 3.0 μm to perfect the device. In addition, the influence of cell resistances, radiative recombination coefficient, acceptor and donor defect concentration in the Sb₂Se₃ layer, and interface defects of the ZnSe/Sb₂Se₃ layer on overall device performance are investigated. The ZnSe buffer layer and the Sb₂Se₃ absorber layer are designed to have optimal thicknesses of 100 nm and 1.5 μm, respectively. The proposed device's efficiency with optimized parameters is calculated to be 24%. According to the simulation results, it is possible to build Sb₂Se₃-based thin-film solar devices at a low cost and with high efficiency by incorporating ZnSe as an electron transport layer.

Crystal Growth Promotion and Defects Healing Enable Minimum Open-Circuit Voltage Deficit in Antimony Selenide Solar Cells

Antimony selenide (Sb₂ Se₃ ) is an ideal photovoltaic candidate profiting from its advantageous material characteristics and superior optoelectronic properties, and has gained considerable development in recent years. However, the further device efficiency breakthrough is largely plagued by severe open-circuit voltage (V_OC ) deficit under the existence of multiple defect states and detrimental recombination loss. In this work, an effective absorber layer growth engineering involved with vapor transport deposition and post-selenization is developed to grow Sb₂ Se₃ thin films. High-quality Sb₂ Se₃ with large compact crystal grains, benign [hk1] growth orientation, stoichiometric chemical composition, and suitable direct bandgap are successfully fulfilled under an optimized post-selenization scenario. Planar Sb₂ Se₃ thin-film solar cells with substrate configuration of Mo/Sb₂ Se₃ /CdS/ITO/Ag are constructed. By contrast, such engineering effort can remarkably mitigate the device V_OC deficit, owing to the healed detrimental defects, the suppressed interface and space-charge region recombination, the prolonged carrier lifetime, and the enhanced charge transport. Accordingly, a minimum V_OC deficit of 0.647 V contributes to a record V_OC of 0.513 V, a champion device with highly interesting efficiency of 7.40% is also comparable to those state-of-the-art Sb₂ Se₃ solar cells, paving a bright avenue to broaden its scope of photovoltaic applications.

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se₂- and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary (Sb₂X₃, GeX, SnX), ternary (Cu₂SnX₃, Cu₂GeX₃, CuSbX₂, AgBiX₂), and quaternary (Cu₂ZnSnX₄, Ag₂ZnSnX₄, Cu₂CdSnX₄, Cu₂ZnGeX₄, Cu₂BaSnX₄) chalcogenides (X denotes S/Se), focusing especially on the comparative analysis of their optoelectronic performance metrics, electronic band structure, and point defect characteristics. The performance limiting factors of these photoabsorbers are discussed, together with suggestions for further improvement. Several relatively unexplored classes of chalcogenide compounds (such as chalcogenide perovskites, bichalcogenides, etc.) are highlighted, based on promising early reports on their optoelectronic properties. Finally, pathways for practical applications of emerging chalcogenides in solar energy harvesting are discussed against the backdrop of a market dominated by Si-based solar cells.

One-Step Solution Deposition of Antimony Selenoiodide Films via Precursor Engineering for Lead-Free Solar Cell Applications

Ternary chalcohalides are promising lead-free photovoltaic materials with excellent optoelectronic properties. We propose a simple one-step solution-phase precursor-engineering method for antimony selenoiodide (SbSeI) film fabrication. SbSeI films were fabricated by spin-coating the precursor solution, and heating. Various precursor solutions were synthesized by adjusting the molar ratio of two solutions based on SbCl₃-selenourea and SbI₃. The results suggest that both the molar ratio and the heating temperature play key roles in film phase and morphology. Nanostructured SbSeI films with a high crystallinity were obtained at a molar ratio of 1:1.5 and a temperature of 150 °C. The proposed method could be also used to fabricate (Bi,Sb)SeI.

Alternative Lone-Pair ns2 -Cation-Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications

Lead halide perovskites have emerged in the last decade as advantageous high-performance optoelectronic semiconductors, and have undergone rapid development for diverse applications such as solar cells, light-emitting diodes , and photodetectors. While material instability and lead toxicity are still major concerns hindering their commercialization, they offer promising prospects and design principles for developing promising optoelectronic materials. The distinguished optoelectronic properties of lead halide perovskites stem from the Pb²⁺ cation with a lone-pair 6s² electronic configuration embedded in a mixed covalent-ionic bonding lattice. Herein, we summarize alternative Pb-free semiconductors containing lone-pair ns² cations, intending to offer insights for developing potential optoelectronic materials other than lead halide perovskites. We start with the physical underpinning of how the ns² cations within the material lattice allow for superior optoelectronic properties. We then review the emerging Pb-free semiconductors containing ns² cations in terms of structural dimensionality, which is crucial for optoelectronic performance. For each category of materials, the research progresses on crystal structures, electronic/optical properties, device applications, and recent efforts for performance enhancements are overviewed. Finally, the issues hindering the further developments of studied materials are surveyed along with possible strategies to overcome them, which also provides an outlook on the future research in this field.

Direct Hydrothermal Deposition of Antimony Triselenide Films for Efficient Planar Heterojunction Solar Cells

Antimony selenide (Sb₂Se₃) has attracted increasing attention in photovoltaic applications due to its unique quasi-one-dimensional crystal structure, suitable optical band gap with a high extinction coefficient, and excellent stability. As a promising light-harvesting material, the available synthetic methods for the fabrication of a high-quality film have been quite limited and seriously impeded both the fundamental study and the efficiency improvement. Here, we developed a facile and low-cost hydrothermal method for in situ deposition of Sb₂Se₃ films for solar cell applications. In this process, we apply KSbC₄H₄O₇ and Na₂SeSO₃ as the antimony and selenium sources, respectively, in which thiourea (TU) serves as an additive to suppress the formation of Sb₂O₃ impurities. As a result, improved phase purity and enhanced crystallinity of the Sb₂Se₃ film are thus obtained, along with decreased trap states. Finally, the planar heterojunction Sb₂Se₃ solar cell delivered a power conversion efficiency of 7.9%, which is thus far the highest reported efficiency among solution-processed Sb₂Se₃ solar cells. This simple procedure and efficiency achievement demonstrate the great potential of the hydrothermal deposition process for the fabrication of high-efficiency Sb₂Se₃ solar cells.

A study on the bio-applicability of aqueous-dispersed van der Waals 1-D material Nb2Se9 using poloxamer

In this research, dispersion of a new type of one-dimensional inorganic material Nb₂Se₉, composed of van der Waals bonds, in aqueous solution for bio-application study were studied. To disperse Nb₂Se₉, which exhibits hydrophobic properties in water, experiments were carried out using a block copolymer (poloxamer) as a dispersant. It was confirmed that PPO, the hydrophobic portion of Poloxamer, was adsorbed onto the surface of Nb₂Se₉, and PEO, the hydrophilic portion, induced steric hinderance to disperse Nb₂Se₉ to a size of 10 nm or less. To confirm the adaptability of muscle cells C2C12 to the dispersed Nb₂Se₉ using poloxamer 188 as dispersant, a MTT assay and a live/dead assay were performed, demonstrating improvement in the viability and proliferation of C2C12 cells.

Aqueous solution processed MoS3 as an eco-friendly hole-transport layer for all-inorganic Sb2Se3 solar cells

Here we report a solution processed environmentally friendly MoS3 hole-transport material for Sb2Se3 solar cells, where MoS3 exhibits a matched energy level relative to Sb2Se3. In the synthesis, H2S produced by the thermal decomposition of (NH4)2MoS4 is found to efficiently eliminate the antimony oxide impurity formed on the Sb2Se3 surface. Finally, the all-inorganic Sb2Se3 solar cell delivers an efficiency of 6.86% with excellent stability.

Recent Progress in Fabrication of Antimony/Bismuth Chalcohalides for Lead-Free Solar Cell Applications

Despite their comparable performance to commercial solar systems, lead-based perovskite (Pb-perovskite) solar cells exhibit limitations including Pb toxicity and instability for industrial applications. To address these issues, two types of Pb-free materials have been proposed as alternatives to Pb-perovskite: perovskite-based and non-perovskite-based materials. In this review, we summarize the recent progress on solar cells based on antimony/bismuth (Sb/Bi) chalcohalides, representing Sb/Bi non-perovskite semiconductors containing chalcogenides and halides. Two types of ternary and quaternary chalcohalides are described, with their classification predicated on the fabrication method. We also highlight their utility as interfacial layers for improving other solar cells. This review provides clues for improving the performances of devices and design of multifunctional solar systems.

Disrupted intracellular redox balance with enhanced ROS generation and sensitive drug release for cancer therapy

In this paper, a nanocomposite was constructed to achieve improved photodynamic therapy (PDT) via disrupting the redox balance in cancer cells. Firstly, Sb₂Se₃ nanorods were synthesized as a new photosensitizer, displaying high photothermal conversion efficiency (45.2%) and reactive oxygen species (ROS) production due to the narrow band gap (1.1 eV) and a good NIR response. Moreover, the mechanism was investigated, demonstrating that dissolved O₂ and photoinduced electrons manipulated ROS generation. Then, mesoporous silica was coated outside to improve the biocompatibility and to supply abundant space for the anticancer drug (doxorubicin, DOX). The sensitive Se-Se linker was grafted outside via a silane coupling reaction to block DOX molecules in the mesopores. As we know, the Se-Se group is sensitive to GSH, which can induce Se-Se linker bond breakage and targeted drug release due to the high expression of GSH in tumor cells. What is more, the consumption of intracellular GSH can also disrupt the redox balance in cancer cells, which would promote the PDT efficiency. The high-Z element of Sb possesses a high X-ray attenuation coefficient, giving the composite high contrast in CT imaging. This is associated with thermal imaging and multi-therapy (PDT/PTT/chemotherapy) to reveal the potential application to cancer treatment.

Wetting-induced formation of void-free metal halide perovskite films by green ultrasonic spray coating for large-area mesoscopic perovskite solar cells

A void-free metal halide perovskite (MHP) layer on a mesoscopic TiO2 (m-TiO2) film was formed via the wetting-induced infiltration of MHP solution in the m-TiO2 film via a green ultrasonic spray coating process using a non-hazardous solvent. The systematic investigation of the behavior of ultrasonic-sprayed MHP micro-drops on the m-TiO2 film disclosed that the void-free MHP layer on the m-TiO2 film can be formed if the following conditions are satisfied: (1) the sprayed micro-drops are merged and wetted in the mesoscopic scaffold of the m-TiO2 film, (2) the MHP solution infiltrated into the m-TiO2 film by wetting is leveled to make a smooth wet MHP film, and (3) the smooth wet MHP film is promptly heat treated to eliminate dewetting and the coffee ring effect by convective flow in order to form a uniform void-free MHP layer. A void-free MHP layer on the m-TiO2 film was formed under optimal ultrasonic spray coating conditions of substrate temperature of ∼30 °C, spray flow rate of ∼11 mL h-1, nozzle to substrate distance of ∼8 cm, and MHP solution-concentration of ∼0.6 M under a fixed scan speed of 30 mm s-1 and purged N2 carrier gas pressure of 0.02 MPa. The mesoscopic MHP solar cells with an aperture area of 0.096, 1, 25, and 100 cm2 exhibited 17.14%, 16.03%, 12.93%, and 10.67% power conversion efficiency at 1 sun condition, respectively.

Solution-Processed Sb2Se3 on TiO2 Thin Films Toward Oxidation- and Moisture-Resistant, Self-Powered Photodetectors

Semiconductor-sensitized TiO₂ thin films with long-term air stability are attractive for optoelectronic devices and applications. Herein, we demonstrate the potential of the TiO₂ thin film (∼800 nm in thickness) sensitized with a Sb₂Se₃ layer (∼350 nm) grown from solution spin coating and processed by annealing recrystallization at 300 °C for high-performance optical detection. The type-II band alignment, p-Sb₂Se₃/n-TiO₂ heterojunction, and narrow band gap of Sb₂Se₃ (∼1.25 eV) endow the film photodetector with a large photocurrent, high switching stability and on/off ratio (>10³), and fast response speeds (<20 ms) under the broadband visible-near-infrared irradiation in a zero-bias self-powered photovoltaic mode. In particular, the photodetector shows notable resistance to oxidation and moisture for long-term operation, which is linked to the modest surface oxidation (Sb-O) of Sb₂Se₃, as verified by X-ray photoelectron spectroscopy. The first-principles calculations show that a low and medium concentration of oxygen substitution for Se (O_Se) and oxygen interstitial (O_i) with negative formation energies can lead to such a moderate surface oxidation but do not generate impurity states or just introduce a shallow-level acceptor state in the electronic structures of Sb₂Se₃ without degrading its optoelectronic performance. Our theoretical results offer a rational explanation for the air-stable and oxidation/moisture-resistant characteristics in moderately oxidized Sb₂Se₃ and may shed light on the surface oxidation-property relationship studies of other nonoxide semiconductor-sensitized devices.

Fundamental Physical Characterization of Sb2Se3-Based Quasi-Homojunction Thin Film Solar Cells

A new type of solar cell based on Cu-doped (p-type) and I-doped (n-type) Sb₂Se₃ has been designed and fabricated using magnetron sputtering with two different thicknesses of absorber. The overall objective is for better understanding the charge recombination mechanism, especially at the interface region. The investigation has been specifically performed using IMPS (intensity modulated photocurrent spectroscopy), IMVS (intensity modulated photovoltage spectroscopy), and diode characterizations. It has been found that an increase of the absorber thickness leads to a shorter carrier lifetime, but longer diffusion length and lower trap density, resulting in significantly better performance. Furthermore, it is demonstrated that trap-assisted recombination does not affect the short-circuit current density (J_sc), but significantly decreases the open-circuit voltage (V_oc). As a result, an encouraging power conversion efficiency (PCE) of 2.41%, fill factor (FF) of 41%, J_sc of 20 mA/cm², and V_oc of 294 mV are obtained. Most importantly, key parameters for further increasing the PCE have been identified.

Improved Performance of Thermally Evaporated Sb2Se3 Thin-Film Solar Cells via Substrate-Cooling-Speed Control and Hydrogen-Sulfide Treatment

Antimony selenide is a promising abundant absorber material for solar cells. However, current Sb₂Se₃ photovoltaic devices, which are fabricated via thermal evaporation, tend to have stoichiometric problems and show suboptimal performance. In this paper, we use a modified thermal evaporator to fabricate high-quality Sb₂Se₃ films. By dedicatedly cooling the substrate, we can improve both the Sb₂Se₃ morphology and the Sb₂Se₃/CdS heterojunction interface substantially. We find a suitable annealing atmosphere, H₂S, which can largely compensate for possible deficiencies of Se and remove the antimony-oxide layer on the film surface. Thanks to cooling control and H₂S treatment, we obtain a significantly improved efficiency (6.24%) for the Sb₂Se₃ solar cells. Our results indicate that this thermal evaporation technique is a promising approach to improve the large-scale fabrication of antimony chalcogenide solar cells.

Strain Tuning via Larger Cation and Anion Codoping for Efficient and Stable Antimony-Based Solar Cells

Strain induced by lattice distortion is one of the key factors that affect the photovoltaic performance via increasing defect densities. The unsatisfied power conversion efficiencies (PCEs) of solar cells based on antimony chalcogenides (Sb-Chs) are owing to their photoexcited carriers being self-trapped by the distortion of Sb2S3 lattice. However, strain behavior in Sb-Chs-based solar cells has not been investigated. Here, strain tuning in Sb-Chs is demonstrated by simultaneously replacing Sb and S with larger Bi and I ions, respectively. Bi/I codoped Sb2S3 cells are fabricated using poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7-(2,1,3-enzothiadiazole)] as the hole-transporting layer. Codoping reduced the bandgap and rendered a bigger tension strain (1.76 × 10-4) to a relatively smaller compression strain (-1.29 × 10-4). The 2.5 mol% BiI3 doped Sb2S3 cell presented lower trap state energy level than the Sb2S3 cell; moreover, this doping amount effectively passivated the trap states. This codoping shows a similar trend even in the low bandgap Sb2(SxSe1-x)3 cell, resulting in 7.05% PCE under the standard illumination conditions (100 mW cm-2), which is one of the top efficiencies in solution processing Sb2(SxSe1-x)3 solar cells. Furthermore, the doped cells present higher humidity, thermal and photo stability. This study provides a new strategy for stable Pb-free solar cells.

Comparison of Clusters Produced from Sb2Se3 Homemade Polycrystalline Material, Thin Films, and Commercial Polycrystalline Bulk Using Laser Desorption Ionization with Time of Flight Quadrupole Ion Trap Mass Spectrometry

This study compared Sb₂Se₃ material in the form of commercial polycrystalline bulk, sputtered thin film, and homemade polycrystalline material using laser desorption ionization (LDI) time of flight mass spectrometry with quadrupole ion trap mass spectrometry. It also analyzed the stoichiometry of the Sb_mSe_n clusters formed. The results showed that homemade Sb₂Se₃ bulk was more stable compared to thin film; its mass spectra showed the expected cluster formation. The use of materials for surface-assisted LDI (SALDI), i.e., graphene, graphene oxide, and C₆₀, significantly increased the mass spectra intensity. In total, 19 Sb_mSe_n clusters were observed. Six novel, high-mass clusters-Sb₄Se₄⁺, Sb₅Se_3-6⁺, and Sb₇Se₄⁺-were observed for the first time when using paraffin as a protective agent.

Enhanced Electrical Conductivity of Sb2S3 Thin Film via C60 Modification and Improvement in Solar Cell Efficiency

Sb2S3 has attracted great research interest very recently as a promising absorber material for photoelectric and photovoltaic devices because of its unique optical and electrical properties and single, stable phase. However, the intrinsic high resistivity property of Sb2S3 material is one of the major factors restricting the further improvement of its application. In this work, the C60 modification of Sb2S3 thin films is investigated. The conductivity of Sb2S3 thin films increases from 4.71 × 10-9 S cm-1 for unmodified condition to 2.86 × 10-8 S cm-1 for modified thin films. Thin-film solar cells in the configuration of glass/(SnO2:F) FTO/TiO2/Sb2S3(C60)/Spiro-OMeTAD/Au are fabricated, and the conversion efficiency is increased from 1.10% to 1.74%.

9.2%-efficient core-shell structured antimony selenide nanorod array solar cells

Antimony selenide (Sb₂Se₃) has a one-dimensional (1D) crystal structure comprising of covalently bonded (Sb₄Se₆)_n ribbons stacking together through van der Waals force. This special structure results in anisotropic optical and electrical properties. Currently, the photovoltaic device performance is dominated by the grain orientation in the Sb₂Se₃ thin film absorbers. Effective approaches to enhance the carrier collection and overall power-conversion efficiency are urgently required. Here, we report the construction of Sb₂Se₃ solar cells with high-quality Sb₂Se₃ nanorod arrays absorber along the [001] direction, which is beneficial for sun-light absorption and charge carrier extraction. An efficiency of 9.2%, which is the highest value reported so far for this type of solar cells, is achieved by junction interface engineering. Our cell design provides an approach to further improve the efficiency of Sb₂Se₃-based solar cells.

Improvement in Sb2Se3 Solar Cell Efficiency through Band Alignment Engineering at the Buffer/Absorber Interface

Energy band alignment plays an important role in heterojunction thin-film solar cells. In this work, we report the application of ternary Cd _xZn_{1- x}S buffer layers in antimony selenide (Sb₂Se₃) thin-film solar cells. The results of our study revealed that the Cd/Zn element ratios not only affected the optical band gap of Cd _xZn_{1- x}S buffers but also modified the band alignment at the junction interface. A Sb₂Se₃ solar cell with an optimal conduction-band offset value (0.34 eV) exhibited an efficiency of 6.71%, which represents a relative 32.1% enhancement as compared to the reference CdS/Sb₂Se₃ solar cell. The results further indicated that a "spike"-like band structure suppressed the recombination rate at the interface and hence increased the device open-circuit voltage and fill factor. Electrochemical impedance spectroscopy analysis exhibited that the Cd _xZn_{1- x}S/Sb₂Se₃ solar cell had higher recombination resistance and longer carrier lifetime than the CdS/Sb₂Se₃ device.

Key Factors Affecting the Performance of Sb2S3-sensitized Solar Cells During an Sb2S3 Deposition via SbCl3-thiourea Complex Solution-processing

Sb2S3 is considered as one of the emerging light absorbers that can be applied to next-generation solar cells because of its unique optical and electrical properties. Recently, we demonstrated its potential as next-generation solar cells by achieving a high photovoltaic efficiency of > 6% in Sb2S3-sensitized solar cells using a simple thiourea (TU)-based complex solution method. Here, we describe the key experimental procedures for the deposition of Sb2S3 on a mesoporous TiO2 (mp-TiO2) layer using a SbCl3-TU complex solution in the fabrication of solar cells. First, the SbCl3-TU solution is synthesized by dissolving SbCl3 and TU in N,N-dimethylformamide at different molar ratios of SbCl3:TU. Then, the solution is deposited on as-prepared substrates consisting of mp-TiO2/TiO2-blocking layer/F-doped SnO2 glass by spin coating. Finally, to form crystalline Sb2S3, the samples are annealed in an N2-filled glove box at 300 °C. The effects of the experimental parameters on the photovoltaic device performance are also discussed.

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency

Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.

Antimony selenide possess several advantages for solar cell applications but state-of-the-art vapor transport deposition methods suffer from poor film quality. Here Wen et al. develop a fast and cheap method to reduce the defect density by 10 times and achieve a certified power conversion efficiency of 7.6%.

Quantum dot-sensitized solar cells

A comprehensive overview of the development of quantum dot-sensitized solar cells (QDSCs) is presented.

High-Performance Solid-State PbS Quantum Dot-Sensitized Solar Cells Prepared by Introduction of Hybrid Perovskite Interlayer

High-performance solid-state PbS quantum dot-sensitized solar cells (QD-SSCs) with stable 9.2% power conversion efficiency at 1 Sun condition are demonstrated by introduction of hybrid perovskite interlayer. The PbS QDs formed on mesoscopic TiO₂ (mp-TiO₂) by spin-assisted successive precipitation and anionic exchange reaction method do not exhibit PbSO₄ but have PbSO₃ oxidation species. By introducing perovskite interlayer in between mp-TiO₂/PbS QDs and poly-3-hexylthiophene, the PbSO₃ oxidation species are fully removed in the PbS QDs and thereby the efficiency of PbS QD-SSCs is enhanced over 90% compared to the pristine PbS QD-SSCs.

Beyond methylammonium lead iodide: prospects for the emergent field of ns2 containing solar absorbers

The field of photovoltaics is undergoing a surge of interest following the recent discovery of the lead hybrid perovskites as a remarkably efficient class of solar absorber. Of these, methylammonium lead iodide (MAPI) has garnered significant attention due to its record breaking efficiencies, however, there are growing concerns surrounding its long-term stability. Many of the excellent properties seen in hybrid perovskites are thought to derive from the 6s² electronic configuration of lead, a configuration seen in a range of post-transition metal compounds. In this review we look beyond MAPI to other ns² solar absorbers, with the aim of identifying those materials likely to achieve high efficiencies. The ideal properties essential to produce highly efficient solar cells are discussed and used as a framework to assess the broad range of compounds this field encompasses. Bringing together the lessons learned from this wide-ranging collection of materials will be essential as attention turns toward producing the next generation of solar absorbers.

Colloidal synthesis and characterization of single-crystalline Sb2Se3 nanowires

Single-crystalline Sb₂Se₃ nanowires have been synthesized by a hot-injection phosphine-free colloidal method and show excellent photoelectrochemical properties.

Current progress and scientific challenges in the advancement of organic–inorganic lead halide perovskite solar cells

The solution-processed organic–inorganic lead halide perovskite solar cells have recently emerged as promising candidates for the conversion of solar power into electricity.

An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors

The need for low-cost high-performance broadband photon detection with sensitivity in the near infrared (NIR) has driven interest in new materials that combine high absorption with traditional electronic infrastructure (CMOS) compatibility. Here, we demonstrate a facile, low-cost and scalable, catalyst-free one-step solution-processed approach to grow one-dimensional Sb₂Se₃ nanostructures directly on flexible substrates for high-performance NIR photodetectors. Structural characterization and compositional analyses reveal high-quality single-crystalline material with orthorhombic crystal structure and a near-stoichiometric Sb/Se atomic ratio. We measure a direct band gap of 1.12 eV, which is consistent with predictions from theoretical simulations, indicating strong NIR potential. The fabricated metal-semiconductor-metal photodetectors exhibit fast response (on the order of milliseconds) and high performance (responsivity ~ 0.27 A/W) as well as excellent mechanical flexibility and durability. The results demonstrate the potential of molecular-ink-based Sb₂Se₃ nanostructures for flexible electronic and broadband optoelectronic device applications.

Efficient hysteresis-less bilayer type CH₃NH₃PbI₃ perovskite hybrid solar cells

Bilayer type CH3NH3PbI3 (MAPbI3) perovskite hybrid solar cells were fabricated via a one-step spin-coating process by using solubility controlled MAPbI3 solutions of MAPbI3-DMSO (dimethyl sulfoxide) and MAPbI3-DMF (N, N-dimethylformamide)-HI. The best DMSO-bilayer device showed 1.07 ± 0.02 V V(oc) (open-circuit voltage), 20.2 ± 0.1 mA cm(-2) J(sc) (short-circuit current density), 68 ± 2% FF (fill factor), and 15.2 ± 0.3% η (overall power conversion efficiency) under the forward scan direction and 1.07 ± 0.02 V V(oc), 20.4 ± 0.1 mA cm(-2) J(sc), 70 ± 3% FF, and 15.9 ± 0.4% η under the reverse scan direction. The best HI-bilayer device had 1.08 ± 0.02 V V(oc), 20.6 ± 0.1 mA cm(-2) J(sc), 75 ± 1% FF, and 17.2 ± 0.2% η under the forward scan direction and 1.08 ± 0.02 V V(oc), 20.6 ± 0.1 mA cm(-2) J(sc), 76 ± 2% FF, and 17.4 ± 0.3% η under the reverse scan direction. The deviation of average device efficiency (η(avg)) of 20 DMSO samples and 20 HI samples was 14.2 ± 0.95% and 16.2 ± 0.85%, respectively. Therefore, the HI-bilayer devices exhibited better device efficiency and smaller J-V (current density-voltage) hysteresis with respect to the scan direction than the DMSO-bilayer devices due to the reduced recombination and traps by the formation of a purer and larger MAPbI3 perovskite crystalline film.

CuS/CdS Quantum Dot Composite Sensitizer and Its Applications to Various TiO2 Mesoporous Film-Based Solar Cell Devices

A nanoscale composite sensitizer composed of CuS and CdS quantum dots (QDs) was prepared by a simple but effective layer-by-layer reaction between a metal cation (Cu(2+) or Cd(2+)) and a sulfide anion (S(2-)). The as-prepared composite CuS/CdS QD sensitizer displayed an enhanced photon-to-current conversion over the sensitizing range of the visible spectrum compared to the counterpart of the pure CdS sensitizer. At the optimized ratio of the deposited amounts of CuS and CdS, the best CuS/CdS-sensitized mesoporous TiO2 cell with a polysulfide electrolyte showed an overall power conversion efficiency of 3.60% with a short circuit current (Jsc) of 11.77 mA/cm(2), an open circuit voltage (Voc) of 0.65 V, and a fill factor (FF) of 0.47. From the transmission electron microscopy images, the initially deposited CuS seemed to take a nucleation site to accumulate more CdS in the later deposition. The kinetic studies by impedance and Voc decay measurements also revealed that the CuS/CdS and CdS QD sensitizers made a similar interface between TiO2 and the electrolyte, but the former had a larger resistance of charge transfer with a longer lifetime of excitons after light absorption than the latter. To enhance the sensitizing power further, a multilayer QD sensitizer of CuS/CdS/CdSe was prepared by successive ionic layer adsorption and reaction (SILAR). This led to the best performance of 4.32% overall power conversion efficiency. Finally, a hybrid sensitizing system of inorganic QD (CuS/CdS) and organic dye (coded MK-2) was tested with a [Co(bpy)3](2+/3+) redox mediator. The CuS/CdS/MK-2 dye-sensitized cell showed over 3.0% efficiency under the standard illumination condition (1 sun).

Vibrational properties and bonding nature of Sb2Se3 and their implications for chalcogenide materials

There is more to chemical bonding in chalcogenides than the shortest, strongest bonds, as revealed by microscopic quantum-chemical descriptors.

Antimony selenide (antimonselite, Sb₂Se₃) is a versatile functional material with emerging applications in solar cells. It also provides an intriguing prototype to study different modes of bonding in solid chalcogenides, all within one crystal structure. In this study, we unravel the complex bonding nature of crystalline Sb₂Se₃ by using an orbital-based descriptor (the crystal orbital Hamilton population, COHP) and by analysing phonon properties and interatomic force constants. We find particularly interesting behaviour for the medium-range Sb···Se contacts, which still contribute significant stabilisation but are much softer than the “traditional” covalent bonds. These results have implications for the assembly of Sb₂Se₃ nanostructures, and bond-projected force constants appear as a useful microscopic descriptor for investigating a larger number of chalcogenide functional materials in the future.

Hydrazine solution processed Sb2S3, Sb2Se3 and Sb2(S(1-x)Se(x))3 film: molecular precursor identification, film fabrication and band gap tuning

Sb₂(S_1−xSe_x)₃ (0 ≤ x ≤ 1) compounds have been proposed as promising light-absorbing materials for photovoltaic device applications. However, no systematic study on the synthesis and characterization of polycrystalline Sb₂(S_1−xSe_x)₃ thin films has been reported. Here, using a hydrazine based solution process, single-phase Sb₂(S_1−xSe_x)₃ films were successfully obtained. Through Raman spectroscopy, we have investigated the dissolution mechanism of Sb in hydrazine: 1) the reaction between Sb and S/Se yields [Sb₄S₇]^2-/[Sb₄Se₇]^2- ions within their respective solutions; 2) in the Sb-S-Se precursor solutions, Sb, S, and Se were mixed on a molecular level, facilitating the formation of highly uniform polycrystalline Sb₂(S_1−xSe_x)₃ thin films at a relatively low temperature. UV-vis-NIR transmission spectroscopy revealed that the band gap of Sb₂(S_1−xSe_x)₃ alloy films had a quadratical relationship with the Se concentration x and it followed the equation , where the bowing parameter was 0.118 eV. Our study provides a valuable guidance for the adjustment and optimization of the band gap in hydrazine solution processed Sb₂(S_1−xSe_x)₃ alloy films for the future fabrication of improved photovoltaic devices.

Multidimensional (0D to 3D) Alkaline-Earth Metal Diphosphonates: Synthesis, Structural Diversity, and Luminescence Properties

A series of new alkaline-earth metal diphosphonate frameworks were successfully synthesized under solvothermal reaction condition (160 °C, 3 d) using 1-hydroxyethylidene-1,1-diphosphonic acid (CH3C(OH)(H2PO3)2, hedpH4) as a diphosphonate building block and Mg(II), Ca(II), Sr(II), or Ba(II) ions as alkaline-earth metal ion centers in water, dimethylformamide, and/or EtOH media. These diphosphonate frameworks, (H2NMe2)4[Mg(hedpH2)3]·3H2O (1), (H2NMe2)2[Ca(hedpH2)2] (2), (H2NMe2)2[Sr3(hedpH2)4(H2O)2] (3), and [Ba3(hedpH2)3]·H2O (4) exhibited interesting structural topologies (zero-, one-, two-, and three-dimensional (0D, 1D, 2D, and 3D, respectively)), which are mainly depending on the metal ions and the solvents used in the synthesis. The single-crystal analysis of these newly synthesized compounds revealed that 1 was a 0D molecule, 2 has 1D chains, 3 was a 3D molecule, and 4 has 2D layers. All compounds were further characterized using thermogravimetric analysis, solid-state (31)P NMR, powder X-ray diffraction analysis, UV-vis spectra, and infrared spectroscopy. In addition, Eu(III)- and Tb(III)-doped compounds of 1-4, namely, (H2NMe2)4[Ln(x)Mg(1-x)(hedpH2)2(hedpH(2-x))]·3H2O (1Ln), (H2NMe2)2[Ln(x)Ca(1-x)(hedpH2)(hedpH(2-x))] (2Ln), (H2NMe2)2[Ln(x)Sr(3-x)(hedpH2)3(hedpH(2-x))(H2O)2] (3Ln), and [Ln(x)Ba(3-x)(hedpH2)2(hedpH(2-x))]·H2O (4Ln) (where Ln = Eu, Tb), were synthesized, and their photoluminescence properties were studied. The quantum yield of 1Eu-4Eu was measured with reference to commercial red phosphor, Y2O2S:Eu(3+) (YE), and the quantum yield of terbium-doped compounds 1Tb-4Tb was measured with reference to commercial green-emitting phosphor CeMgAl10O17:Tb(3+). Interestingly, the compound 2Eu showed very high quantum yield of 92.2%, which is better than that of the reference commercial red phosphor, YE (90.8%).

Efficiency enhanced rutile TiO2 nanowire solar cells based on an Sb2S3 absorber and a CuI hole conductor

The spray technique is introduced for CuI deposition on Sb₂S₃-sensitized TiO₂ nanowire solar cells, which enhances the photovoltaic performance of the device.

Thermal evaporation and characterization of Sb2Se3 thin film for substrate Sb2Se3/CdS solar cells

Sb2Se3 is a promising absorber material for photovoltaic cells because of its optimum band gap, strong optical absorption, simple phase and composition, and earth-abundant and nontoxic constituents. However, this material is rarely explored for photovoltaic application. Here we report Sb2Se3 solar cells fabricated from thermal evaporation. The rationale to choose thermal evaporation for Sb2Se3 film deposition was first discussed, followed by detailed characterization of Sb2Se3 film deposited onto FTO with different substrate temperatures. We then studied the optical absorption, photosensitivity, and band position of Sb2Se3 film, and finally a prototype photovoltaic device FTO/Sb2Se3/CdS/ZnO/ZnO:Al/Au was constructed, achieving an encouraging 2.1% solar conversion efficiency.

Enhancing the Performance of Sensitized Solar Cells with PbS/CH3NH3PbI3 Core/Shell Quantum Dots

We report on the fabrication of PbS/CH3NH3PbI3 (=MAP) core/shell quantum dot (QD)-sensitized inorganic-organic heterojunction solar cells on top of mesoporous (mp) TiO2 electrodes with hole transporting polymers (P3HT and

PEDOT

PSS). The PbS/MAP core/shell QDs were in situ-deposited by a modified successive ionic layer adsorption and reaction (SILAR) process using PbI2 and Na2S solutions with repeated spin-coating and subsequent dipping into CH3NH3I (=MAI) solution in the final stage. The resulting device showed much higher efficiency as compared to PbS QD-sensitized solar cells without a MAP shell layer, reaching an overall efficiency of 3.2% under simulated solar illumination (AM1.5, 100 mW·cm(-2)). From the measurement of the impedance spectroscopy and the time-resolved photoluminescence (PL) decay, the significantly enhanced performance is mainly attributed to both reduced charge recombination and better charge extraction by MAP shell layer. In addition, we demonstrate that the MAP shell effectively prevented the photocorrosion of PbS, resulting in highly improved stability in the cell efficiency with time. Therefore, our approach provides method for developing high performance QD-sensitized solar cells.

Electrodeposition of antimony selenide thin films and application in semiconductor sensitized solar cells

Sb2Se3 thin films are proposed as an alternative light harvester for semiconductor sensitized solar cells. An innovative electrodeposition route, based on aqueous alkaline electrolytes, is presented to obtain amorphous Sb2Se3. The amorphous to crystalline phase transition takes place during a soft thermal annealing in Ar atmosphere. The potential of the Sb2Se3 electrodeposited thin films in semiconductor sensitized solar cells is evaluated by preparing TiO2/Sb2Se3/CuSCN planar heterojunction solar cells. The resulting devices generate electricity from the visible and NIR photons, exhibiting the external quantum efficiency onset close to 1050 nm. Although planar architecture is not optimized in terms of charge carrier collection, photocurrent as high as 18 mA/cm(2), under simulated (AM1.5G) solar light, is achieved. Furthermore, the effect of the Sb2Se3 thickness and microstructural properties on the photocurrent is analyzed, suggesting the hole transport is the main limiting mechanism. The present findings provide significant insights to design efficient semiconductor sensitized solar cells based on advanced architectures (e.g., nanostructured and tandem), opening wide possibilities for progresses in this emerging photovoltaics technology.