1
|
Liu YZ, Dai JQ, Yuan J, Zhao MW. The tunneling electroresistance effect in a van der Waals ferroelectric tunnel junction based on a graphene/In 2Se 3/MoS 2/graphene heterostructure. Phys Chem Chem Phys 2023. [PMID: 38047441 DOI: 10.1039/d3cp04408d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
In recent years, α-In2Se3 has attracted great attention in miniaturizing nonvolatile random memory devices because of its room temperature ferroelectricity and atomic thickness. In this work, we construct two-dimensional (2D) van der Waals (vdW) heterostructures α-In2Se3/MoS2 with different ferroelectric polarization and design a 2D graphene (Gr)/In2Se3/MoS2/Gr ferroelectric tunnel junction (FTJ) with the symmetric electrodes. Our calculations show that the band alignment of the heterostructures can be changed from type-I to type-II accompanied by the reversal of the ferroelectric polarization of In2Se3. Furthermore, the ferroelectricity persists in Gr/In2Se3/MoS2/Gr vdW FTJs, and the presence of dielectric layer MoS2 in the FTJs enables the effective modulation of the tunneling barrier by altering the ferroelectric polarization of α-In2Se3, which results in two distinct conducting states denoted as "ON" and "OFF" with a large tunneling electroresistance (TER) ratio exceeding 105%. These findings suggest the importance of ferroelectric vdW heterostructures in the design of FTJs and propose a promising route for applying the 2D ferroelectric/semiconductor heterostructures with out-of-plane polarization in high-density ferroelectric memory devices.
Collapse
Affiliation(s)
- Yu-Zhu Liu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Jian-Qing Dai
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Jin Yuan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Miao-Wei Zhao
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| |
Collapse
|
2
|
Xu M, Chen X, Guo Y, Wang Y, Qiu D, Du X, Cui Y, Wang X, Xiong J. Reconfigurable Neuromorphic Computing: Materials, Devices, and Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301063. [PMID: 37285592 DOI: 10.1002/adma.202301063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Revised: 05/15/2023] [Indexed: 06/09/2023]
Abstract
Neuromorphic computing has been attracting ever-increasing attention due to superior energy efficiency, with great promise to promote the next wave of artificial general intelligence in the post-Moore era. Current approaches are, however, broadly designed for stationary and unitary assignments, thus encountering reluctant interconnections, power consumption, and data-intensive computing in that domain. Reconfigurable neuromorphic computing, an on-demand paradigm inspired by the inherent programmability of brain, can maximally reallocate finite resources to perform the proliferation of reproducibly brain-inspired functions, highlighting a disruptive framework for bridging the gap between different primitives. Although relevant research has flourished in diverse materials and devices with novel mechanisms and architectures, a precise overview remains blank and urgently desirable. Herein, the recent strides along this pursuit are systematically reviewed from material, device, and integration perspectives. At the material and device level, one comprehensively conclude the dominant mechanisms for reconfigurability, categorized into ion migration, carrier migration, phase transition, spintronics, and photonics. Integration-level developments for reconfigurable neuromorphic computing are also exhibited. Finally, a perspective on the future challenges for reconfigurable neuromorphic computing is discussed, definitely expanding its horizon for scientific communities.
Collapse
Affiliation(s)
- Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xinrui Chen
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xinchuan Du
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yi Cui
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| |
Collapse
|
3
|
Mukherjee S, Dutta D, Ghosh A, Koren E. Graphene-In 2Se 3 van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation. ACS NANO 2023; 17:22287-22298. [PMID: 37930899 DOI: 10.1021/acsnano.3c03820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2023]
Abstract
Functional diversification at the single-device level has become essential for emerging optical neural network (ONN) development. Stable ferroelectricity harnessed with strong light sensitivity in α-In2Se3 holds great potential for developing ultrathin neuromorphic devices. Herein, we demonstrated an all-2D van der Waals heterostructure-based programmable synaptic field effect transistor (FET) utilizing a ferroelectric α-In2Se3 nanosheet and monolayer graphene. The devices exhibited reconfigurable, multilevel nonvolatile memory (NVM) states, which can be successively modulated by multiple dual-mode (optical and electrical) stimuli and thereby used to realize energy-efficient, heterosynaptic functionalities in a biorealistic fashion. Furthermore, under light illumination, the prototypical device can toggle between volatile (photodetector) and nonvolatile optical random-access memory (ORAM) logic operation, depending upon the ferroelectric-dipole induced band adjustment. Finally, plasticity modulation from short-term to prominent long-term characteristics over a wide dynamic range was demonstrated. The inherent operation mechanism owing to the switchable polarization-induced electronic band alignment and bidirectional barrier height modulation at the heterointerface was revealed by conjugated electronic transport and Kelvin-probe force microscopy (KPFM) measurements. Overall, robust (opto)electronic weight controllability for integrated in-sensor and in-memory logic processors and multibit ORAM systems was readily accomplished by the synergistic ferrophotonic heterostructure properties. Our presented results facilitate the technological implementation of versatile all-2D heterosynapses for next-generation perception, optoelectronic logic systems, and Internet-of-Things (IoT) entities.
Collapse
Affiliation(s)
- Subhrajit Mukherjee
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Debopriya Dutta
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Anurag Ghosh
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Elad Koren
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| |
Collapse
|
4
|
Zhang C, Ning J, Wang D, Zhang J, Hao Y. A review on advanced band-structure engineering with dynamic control for nonvolatile memory based 2D transistors. NANOTECHNOLOGY 2023; 35:042001. [PMID: 37524059 DOI: 10.1088/1361-6528/acebf4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 07/31/2023] [Indexed: 08/02/2023]
Abstract
With advancements in information technology, an enormous amount of data is being generated that must be quickly accessible. However, conventional Si memory cells are approaching their physical limits and will be unable to meet the requirements of intense applications in the future. Notably, 2D atomically thin materials have demonstrated multiple novel physical and chemical properties that can be used to investigate next-generation electronic devices and breakthrough physical limits to continue Moore's law. Band structure is an important semiconductor parameter that determines their electrical and optical properties. In particular, 2D materials have highly tunable bandgaps and Fermi levels that can be achieved through band structure engineering methods such as heterostructure, substrate engineering, chemical doping, intercalation, and electrostatic doping. In particular, dynamic control of band structure engineering can be used in recent advancements in 2D devices to realize nonvolatile storage performance. This study examines recent advancements in 2D memory devices that utilize band structure engineering. The operational mechanisms and memory characteristics are described for each band structure engineering method. Band structure engineering provides a platform for developing new structures and realizing superior performance with respect to nonvolatile memory.
Collapse
Affiliation(s)
- Chi Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Jing Ning
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Dong Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
- Xidian-Wuhu Research Institute, Wuhu 241000, People's Republic of China
| | - Jincheng Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Yue Hao
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| |
Collapse
|
5
|
Meng Q, Yu F, Liu G, Zong J, Tian Q, Wang K, Qiu X, Wang C, Xi X, Zhang Y. Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial β-In2Se3 Thin Films. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091533. [PMID: 37177078 PMCID: PMC10180126 DOI: 10.3390/nano13091533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2023] [Revised: 04/29/2023] [Accepted: 04/29/2023] [Indexed: 05/15/2023]
Abstract
Ferroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In2Se3 has been of particular interest because of its ability to exhibit both in-plane and out-of-plane ferroelectricity. In this article, we realized the molecular beam epitaxial (MBE) growth of β-In2Se3 films on bilayer graphene (BLG) substrates with precisely controlled thickness. Combining in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) measurements, we found that the four-monolayer β-In2Se3 is a semiconductor with a (9 × 1) reconstructed superlattice. In contrast, the monolayer β-In2Se3/BLG heterostructure does not show any surface reconstruction due to the interfacial interaction and moiré superlattice, which instead results in a folding Dirac cone at the center of the Brillouin zone. In addition, we found that the band gap of In2Se3 film decreases after potassium doping on its surface, and the valence band maximum also shifts in momentum after surface potassium doping. The successful growth of high-quality β-In2Se3 thin films would be a new platform for studying the 2D ferroelectric heterostructures and devices. The experimental results on the surface reconstruction and band structures also provide important information on the quantum confinement and interfacial effects in the epitaxial β-In2Se3 films.
Collapse
Affiliation(s)
- Qinghao Meng
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Fan Yu
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Gan Liu
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Junyu Zong
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qichao Tian
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Kaili Wang
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Xiaodong Qiu
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Can Wang
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- School of Physics and Electronic Sciences, Changsha University of Science and Technology, Changsha 410114, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yi Zhang
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| |
Collapse
|
6
|
Dutta D, Mukherjee S, Uzhansky M, Mohapatra PK, Ismach A, Koren E. Edge-Based Two-Dimensional α-In 2Se 3-MoS 2 Ferroelectric Field Effect Device. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18505-18515. [PMID: 37000129 DOI: 10.1021/acsami.3c00590] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Heterostructures based on two-dimensional materials offer the possibility to achieve synergistic functionalities, which otherwise remain secluded by their individual counterparts. Herein, ferroelectric polarization switching in α-In2Se3 has been utilized to engineer multilevel nonvolatile conduction states in a partially overlapping α-In2Se3-MoS2-based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of α-In2Se3 allows to nonvolatilely switch between n-i and n-i-n type junction configurations based on a novel edge state actuation mechanism, paving the way for subnanometric scale nonvolatile device miniaturization. Furthermore, the induced asymmetric polarization enables enhanced photogenerated carriers' separation, resulting in an extremely high photoresponse of ∼1275 A/W in the visible range and strong nonvolatile modulation of the bright A- and B- excitonic emission channels in the overlaying MoS2 monolayer. Our results show significant potential to harness the switchable polarization in partially overlapping α-In2Se3-MoS2 based FeFETs to engineer multimodal, nonvolatile nanoscale electronic and optoelectronic devices.
Collapse
Affiliation(s)
- Debopriya Dutta
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Subhrajit Mukherjee
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Michael Uzhansky
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Pranab K Mohapatra
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
| | - Ariel Ismach
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
| | - Elad Koren
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| |
Collapse
|
7
|
Jia C, Wu S, Fan J, Luo C, Fan M, Li M, He L, Yang Y, Zhang H. Ferroelectrically Modulated and Enhanced Photoresponse in a Self-Powered α-In 2Se 3/Si Heterojunction Photodetector. ACS NANO 2023; 17:6534-6544. [PMID: 36952315 PMCID: PMC10100568 DOI: 10.1021/acsnano.2c11925] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 02/08/2023] [Indexed: 06/18/2023]
Abstract
Photodetectors have been applied to pivotal optoelectronic components of modern optical communication, sensing, and imaging systems. As a room-temperature ferroelectric van der Waals semiconductor, 2D α-In2Se3 is a promising candidate for a next-generation optoelectronic material because of its thickness-dependent direct bandgap and excellent optoelectronic performance. Previous studies of photodetectors based on α-In2Se3 have been rarely focused on the modulated relationship between the α-In2Se3 intrinsic ferroelectricity and photoresponsivity. Herein, a simple integrated process and high-performance photodetector based on an α-In2Se3/Si vertical hybrid-dimensional heterojunction was constructed. Our photodetector in the ferroelectric polarization up state accomplishes a self-powered, highly sensitive photoresponse with an on/off ratio of 4.5 × 105 and detectivity of 1.6 × 1013 Jones, and it also shows a fast response time with 43 μs. The depolarization field generated by the remanent polarization of ferroelectrics in α-In2Se3 provides a strategy for enhancement and modulation of photodetection. The negative correlation was discovered because the enhancement photoresponsivity factor of ferroelectric modulation competes with the photovoltaic behavior within the α-In2Se3/Si heterojunction. Our research highlights the great potential of the high-efficiency heterojunction photodetector for future object recognition and photoelectric imaging.
Collapse
Affiliation(s)
- Cheng Jia
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Shuangxiang Wu
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Jinze Fan
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Chaojie Luo
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Minghui Fan
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Instruments
Center for Physical Science, University
of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ming Li
- Instruments
Center for Physical Science, University
of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lanping He
- Department
of Physics, School of Physics, Hefei University
of Technology, Hefei 230009, China
| | - Yuanjun Yang
- Department
of Physics, School of Physics, Hefei University
of Technology, Hefei 230009, China
| | - Hui Zhang
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
- Department
of Physics, University of Science and Technology
of China, Hefei 230026, China
| |
Collapse
|
8
|
Wang W, Meng Y, Zhang Y, Zhang Z, Wang W, Lai Z, Xie P, Li D, Chen D, Quan Q, Yin D, Liu C, Yang Z, Yip S, Ho JC. Electrically Switchable Polarization in Bi 2 O 2 Se Ferroelectric Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210854. [PMID: 36621966 DOI: 10.1002/adma.202210854] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Revised: 01/03/2023] [Indexed: 06/17/2023]
Abstract
Atomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high-density integration. Here, a room-temperature 2D layered ferroelectric semiconductor, bismuth oxychalcogenides (Bi2 O2 Se), is investigated with a thickness down to 7.3 nm (≈12 layers) and piezoelectric coefficient (d33 ) of 4.4 ± 0.1 pm V-1 . The random orientations and electrically dependent polarization of the dipoles in Bi2 O2 Se are separately uncovered owing to the structural symmetry-breaking at room temperature. Specifically, the interplay between ferroelectricity and semiconducting characteristics of Bi2 O2 Se is explored on device-level operation, revealing the hysteresis behavior and memory window (MW) formation. Leveraging the ferroelectric polarization originating from Bi2 O2 Se, the fabricated device exhibits "smart" photoresponse tunability and excellent electronic characteristics, e.g., a high on/off current ratio > 104 and a large MW to the sweeping range of 47% at VGS = ±5 V. These results demonstrate the synergistic combination of ferroelectricity with semiconducting characteristics in Bi2 O2 Se, laying the foundation for integrating sensing, logic, and memory functions into a single material system that can overcome the bottlenecks in von Neumann architecture.
Collapse
Affiliation(s)
- Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Di Yin
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Chuntai Liu
- Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou, 450002, P. R. China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
| | - Johnny C Ho
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| |
Collapse
|
9
|
Chen Z, Sun M, Li H, Huang B, Loh KP. Oscillatory Order-Disorder Transition during Layer-by-Layer Growth of Indium Selenide. NANO LETTERS 2023; 23:1077-1084. [PMID: 36696459 DOI: 10.1021/acs.nanolett.2c04785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
It is important to understand the polymorph transition and crystal-amorphous phase transition in In2Se3 to tap the potential of this material for resistive memory storage. By monitoring layer-by-layer growth of β-In2Se3 during molecular beam epitaxy (MBE), we are able to identify a cyclical order-disorder transition characterized by a periodic alternation between a glassy-like metastable subunit cell film consisting of n < 5 sublayers (nth layers = the number of subunit cell layers), and a highly crystalline β-In2Se3 at n = 5 layers. The glassy phase shows an odd-even alternation between the indium-cluster layer (n = 1, 3) and an In-Se solid solution (n = 2, 4), which suggests the ability of In and Se atoms to diffuse, aggregate, and intermix. These dynamic natures of In and Se atoms contribute to a defect-driven memory resistive behavior in current-voltage sweeps that is different from the ferroelectric switching of α-In2Se3.
Collapse
Affiliation(s)
- Zhi Chen
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (ICL-2D MOST), Shenzhen University, Shenzhen518060, People's Republic of China
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Mingzi Sun
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, People's Republic of China
| | - Haohan Li
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore117543, Singapore
| | - Bolong Huang
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, People's Republic of China
- Research Centre for Carbon-Strategic Catalysis, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, People's Republic of China
| | - Kian Ping Loh
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (ICL-2D MOST), Shenzhen University, Shenzhen518060, People's Republic of China
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore117543, Singapore
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR999077, People's Republic of China
| |
Collapse
|