Emerging Design and Characterization Guidelines for Polymer-Based Infrared Photodetectors

Doped organic thermoelectric short wavelength infrared detectors

Photon-based organic photodetector performance drops rapidly when going beyond near-infrared light detection due to nonradiative recombination. Here, we report on a device concept for infrared detection using organic thermoelectrics coupled to an infrared absorption film for heat generation. These short wavelength infrared (SWIR) detectors show an excellent area normalized responsivity of over 109 milliampere per watt per square meter at 1 V, two to three orders of magnitude higher than the conjugated polymer SWIR detector reported in the literature and typical organic photodetectors in the visible and near-infrared wavelength range. Moreover, the devices show a fast switch-on time with an estimated 3-decibel frequency of over 610 kilohertz, making the device suitable for a wide range of applications. However, the specific detectivity of the current device concept is limited to 104 Jones. We discuss strategies for improving the specific detectivities of these detectors with technology computer-aided design simulations.

Fabrication and performance analysis of ZnO/Ge/porous Si photodetectors for near-infrared detection

This paper reports on the fabrication of zinc oxide (ZnO)/germanium nanoparticles (Ge NPs)/porous silicon (PSi) photodetector for near-infrared (NIR) detection. Ge NPs are synthesized via pulsed laser ablation in liquid (PLAL) followed by spray coating onto the porous Si substrate and subsequent deposition of a ZnO layer. Field emission scanning electron microscopy (FESEM) confirms the presence of Ge NPs, along with the formation of Ge microwires and a mesh-like Ge pattern on the porous Si surface, attributed to Ge NP supersaturation during spray coating. Ge NPs act as a source of photogenerated electrons, transferring them to the ZnO layer. Additionally, the Ge microwire network facilitates barrier-dominated conduction, further contributing to the generation and transfer of photogenerated electrons. The device achieves its best performance at a bias voltage of 6 V under illumination with 805 nm light, a light intensity of 1.44 mW cm2, and a switching frequency of 6.5 Hz and responsivity of 0.16 A W⁻1.

Terminal Fluorination Modulates Crystallinity and Aggregation of Fully Non-Fused Ring Electron Acceptors for High-Performance and Durable Near-Infrared Organic Photodetectors

High dark current density (Jd) severely hinders further advancement of near-infrared organic photodetectors (NIR OPDs). Herein, we tackle this grand challenge by regulating molecular crystallinity and aggregation of fully non-fused ring electron acceptors (FNREAs). TBT-V-F, which features fluorinated terminals, notably demonstrates crystalline intensification and a higher prevalence predominance of J-aggregation compared to its chlorinated counterpart (TBT-V-Cl). The amalgamation of advantages confers TBT-V-F-based OPDs with lower nonradiative energy loss, improved charge transport, decreased energetic disorder, and reduced trap density. Consequently, the corresponding self-powered OPDs exhibit a 40-fold decrease in Jd, a remarkable increase in detectivity (D*sh), faster response time, and superior thermal stability compared to TBT-V-Cl-based OPDs. Further interfacial optimization results in an ultra-low Jd of 7.30×10-12 A cm-2 with D*sh over 1013 Jones in 320-920 nm wavelength and a climax of 2.2×1014 Jones at 800 nm for the TBT-V-F-based OPDs, representing one of the best results reported to date. This work paves a compelling material-based strategy to suppress Jd for highly sensitive NIR OPDs, while also illustrates the viability of FNREAs in construction of stable and affordable NIR OPDs for real-world applications.

Design of Ultra-Narrow Bandgap Polymer Acceptors for High-Sensitivity Flexible All-Polymer Short-Wavelength Infrared Photodetectors

All-polymer photodetectors possess unique mechanical flexibility and are ideally suitable for the application in next-generation flexible, wearable short-wavelength infrared (SWIR, 1000-2700 nm) photodetectors. However, all-polymer photodetectors commonly suffer from low sensitivity, high noise, and low photoresponse speed in the SWIR region, which significantly diminish their application potential in wearable electronics. Herein, two polymer acceptors with absorption beyond 1000 nm, namely P4TOC-DCBT and P4TOC-DCBSe, were designed and synthesized. The two polymers possess rigid structure and good conformational stability, which is beneficial for reducing energetic disorder and suppressing dark current. Owing to the efficient charge generation and ultralow noise current, the P4TOC-DCBT-based all-polymer photodetector achieved a specific detectivity (D * ${{D}^{^{\ast}}}$ ) of over 1012 Jones from 650 (visible) to 1070 nm (SWIR) under zero bias, with a response time of 1.36 μs. These are the best results for reported all-polymer SWIR photodetectors in photovoltaic mode. More significantly, the all-polymer blend films exhibit good mechanical durability, and hence the P4TOC-DCBT-based flexible all-polymer photodetectors show a small performance attenuation (<4 %) after 2000 cycles of bending to a 3 mm radius. The all-polymer flexible SWIR organic photodetectors are successfully applied in pulse signal detection, optical communication and image capture.

An A-D-A'-D-A-Type Narrow Bandgap Electron Acceptor Based on Selenophene-Flanked Diketopyrrolopyrrole for Sensitive Near-Infrared Photodetection

Near-infrared organic photodetectors possess great application potential in night vision, optical communication, and image sensing, but their development is limited by the lack of narrow bandgap organic semiconductors. A-D-A'-D-A-type molecules, featuring multiple intramolecular charge transfer effects, offer a robust framework for achieving near-infrared light absorption. Herein, we report a novel A-D-A'-D-A-type narrow bandgap electron acceptor named DPPSe-4Cl, which incorporates a selenophene-flanked diketopyrrolopyrrole (Se-DPP) unit as its central A' component. This molecule demonstrates exceptional near-infrared absorption properties with an absorption onset reaching 1120 nm and a low optical bandgap of 1.11 eV, owing to the strong electron-withdrawing ability and quinoidal resonance effect induced by the Se-DPP unit. By implementing a doping compensation strategy assisted by Y6 to reduce the trap density in the photoactive layer, the optimized organic photodetector based on DPPSe-4Cl exhibited efficient spectral response and remarkable sensitivity in the range of 300-1100 nm. Particularly, a specific detectivity surpassing 1012 Jones in the wavelength range of 410-1030 nm is achieved. This work offers a promising approach for developing highly sensitive visible to near-infrared broadband photodetection technology using organic semiconductors.

Extended shortwave infrared absorbing antiaromatic fluorenium-indolizine chromophores

Shortwave infrared (SWIR, 1000-1700 nm) and extended SWIR (ESWIR, 1700-2700 nm) absorbing materials are valuable for applications including fluorescence based biological imaging, photodetectors, and light emitting diodes. Currently, ESWIR absorbing materials are largely dominated by inorganic semiconductors which are often costly both in raw materials and manufacturing processes used to produce them. The development of ESWIR absorbing organic molecules is thus of interest due to the tunability, solution processability, and low cost of organic materials compared to their inorganic counterparts. Herein, through the combination of heterocyclic indolizine donors and an antiaromatic fluorene core, a series of organic chromophores with absorption maxima ranging from 1470-2088 nm (0.84-0.59 eV) and absorption onsets ranging from 1693-2596 nm (0.73-0.48 eV) are designed and synthesized. The photophysical and electrochemical properties of these chromophores, referred to as FluIndz herein, are described via absorption spectroscopy in 17 solvents, cyclic voltammetry, solution photostability, and transient absorption spectroscopy. Molecular orbital energies, predicted electronic transitions, and antiaromaticity are compared to higher energy absorbing chromophores using density functional theory. The presence of thermally accessible diradical states is demonstrated using density functional theory and EPR spectroscopy, while XRD crystallography confirms structural connectivity and existence as a single molecule. Overall, the FluIndz chromophore scaffold exhibits a rational means to access organic chromophores with extremely narrow optical gaps.

Phospha-RosIndolizine Dye with Shortwave Infrared (SWIR) Absorption and Emission

Shortwave infrared (SWIR, 1000-1700 nm) absorbing and emitting dyes are needed for infrared diodes and sensors used in a wide variety of industrial and medical applications. Herein, an electron-withdrawing phosphine oxide (P═O) substituted xanthene is coupled with strong indolizine donors to produce a SWIR absorbing (λabs = 1294 nm in DCM) and emitting (λemis = 1450 nm in DCM) dye called PRos1450. The unique properties of this dye are characterized via photophysical, electrochemical, and computational analyses.

Fast Near-Infrared Photodetectors Based on Nontoxic and Solution-Processable AgBiS2

Solution-processable near-infrared (NIR) photodetectors are urgently needed for a wide range of next-generation electronics, including sensors, optical communications and bioimaging. However, it is rare to find photodetectors with >300 kHz cut-off frequencies, especially in the NIR region, and many of the emerging inorganic materials explored are comprised of toxic elements, such as lead. Herein, solution-processed AgBiS2 photodetectors with high cut-off frequencies under both white light (>1 MHz) and NIR (approaching 500 kHz) illumination are developed. These high cut-off frequencies are due to the short transit distances of charge-carriers in the ultrathin photoactive layer of AgBiS2 photodetectors, which arise from the strong light absorption of this material, such that film thicknesses well below 120 nm are sufficient to absorb >65% of NIR to visible light. It is also revealed that ion migration plays a critical role in the photo-response speed of these devices, and its detrimental effects can be mitigated by finely tuning the thickness of the photoactive layer, which is important for achieving low dark current densities as well. These outstanding characteristics enable the realization of air-stable, real-time heartbeat sensors based on NIR AgBiS2 photodetectors, which strongly motivates their future integration in high-throughput systems.

High-Performance Organic Narrow Dual-Band Circular Polarized Light Detection for Encrypted Communications and Color Imaging

Conventional circularly polarized light (CPL) detectors necessitate several optical elements, posing difficulties in achieving miniature and integrated devices. Recently developed organic CPL detectors require no additional optical elements but usually suffer from low detectivity or low asymmetry factor (g-factor). Here, an organic CPL detector with excellent detectivity and a high g-factor is fabricated. By employing an inverted quasi-planar heterojunction (IPHJ) structure and incorporating an additional liquid crystal film, a CPL detector with an outstanding g-factor of 1.62 is developed. Unfavorable charge injection is effectively suppressed by the IPHJ structure, which reduces the dark current of the organic photodetector. Consequently, a left CPL detectivity of 6.16 × 1014 Jones at 640 nm is realized, surpassing all of the latest photodiode-type CPL detectors. Adopting a liquid crystal film with adjustable wavelengths of selectively reflected light, the hybrid device achieves narrow dual-band CPL detection, varying from 530 to 640 nm, with a half-maximum full width below 90 nm. Notably, the device achieves excellent stability of 260 000 on/off cycles without attenuation. To the best of the authors' knowledge, all these features have rarely been reported in previous work. The CPL detector arrays are also demonstrated for encrypted communications and color imaging.

High-Performance Wearable Organic Photodetectors by Molecular Design and Green Solvent Processing for Pulse Oximetry and Photoplethysmography

White-light detection from the visible to the near-infrared region is central to many applications such as high-speed cameras, autonomous vehicles, and wearable electronics. While organic photodetectors (OPDs) are being developed for such applications, several challenges must be overcome to produce scalable high-detectivity OPDs. This includes issues associated with low responsivity, narrow absorption range, and environmentally friendly device fabrication. Here, an OPD system processed from 2-methyltetrahydrofuran (2-MeTHF) sets a record in light detectivity, which is also comparable with commercially available silicon-based photodiodes is reported. The newly designed OPD is employed in wearable devices to monitor heart rate and blood oxygen saturation using a flexible OPD-based finger pulse oximeter. In achieving this, a framework for a detailed understanding of the structure-processing-property relationship in these OPDs is also developed. The bulk heterojunction (BHJ) thin films processed from 2-MeTHF are characterized at different length scales with advanced techniques. The BHJ morphology exhibits optimal intermixing and phase separation of donor and acceptor moieties, which facilitates the charge generation and collection process. Benefitting from high charge carrier mobilities and a low shunt leakage current, the newly developed OPD exhibits a specific detectivity of above 1012  Jones over 400-900 nm, which is higher than those of reference devices processed from chlorobenzene and ortho-xylene.

InSb/InP Core-Shell Colloidal Quantum Dots for Sensitive and Fast Short-Wave Infrared Photodetectors

Colloidal quantum dot (CQD) technology is considered the main contender toward a low-cost high-performance optoelectronic technology platform for applications in the short-wave infrared (SWIR) to enable 3D imaging, LIDAR night vision, etc. in the consumer electronics and automotive markets. In order to unleash the full potential of this technology, there is a need for a material that is environmentally friendly, thus RoHS compliant, and possesses adequate optoelectronic properties to deliver high-performance devices. InSb CQDs hold great potential in view of their RoHS-compliant nature and─in principle─facile access to the SWIR. However, to date progress in realizing high-performance optoelectronic devices, including photodetectors (PDs), has been limited. Here, we have developed a synthesis method for producing size-tunable InSb CQDs with distinct excitonic peaks spanning a wide range from 900 to 1750 nm. To passivate the surface defects and enhance the photoluminescence (PL) efficiency of InSb CQDs, we further designed an InSb/InP core-shell structure. By employing the InSb/InP core-shell CQDs in a photodiode device stack, we report on robust InSb CQD SWIR photodetectors that exhibit an external quantum efficiency (EQE) of 25% at 1240 nm, a wide linear dynamic range exceeding 128 dB, a photoresponse time of 70 ns, and a specific detectivity of 4.4 × 1011 jones.

Shortwave Infrared Organic Photodiodes Realized by Polaron Engineering

A novel approach for developing shortwave IR (SWIR) organic photodiodes (OPDs) using doped polymers is presented. SWIR OPDs are challenging to produce because of the limitations in extending the absorption of conjugated molecules and the high dark currents of SWIR-absorbing materials. Herein, it is shown that the conversion of bound polarons to free polarons by light energy can be utilized as an SWIR photodetection mechanism. To maximize the bound-polaron density and bound-to-free polaron ratio of the doped polymer film, the doping process is engineered and dopant molecules are diffused into the crystalline domain of the polymer matrix and a direct correlation between the bound-to-free polaron ratio and device performance is confirmed. The optimized double-doped SWIR OPD exhibits a high external quantum efficiency of 77 100% and specific detectivity of 1.11 × 1011 Jones against SWIR. These findings demonstrate the application potential of polarons as alternatives for Frenkel excitons in SWIR OPDs.

Ultrasensitive Room Temperature Infrared Photodetection Using a Narrow Bandgap Conjugated Polymer

Photodetectors operating across the short-, mid-, and long-wave infrared (SWIR-LWIR, λ = 1-14 µm) underpin modern science, technology, and society in profound ways. Narrow bandgap semiconductors that form the basis for these devices require complex manufacturing, high costs, cooling, and lack compatibility with silicon electronics, attributes that remain prohibitive for their widespread usage and the development of emerging technologies. Here, a photoconductive detector, fabricated using a solution-processed narrow bandgap conjugated polymer is demonstrated that enables charge carrier generation in the infrared and ultrasensitive SWIR-LWIR photodetection at room temperature. Devices demonstrate an ultralow electronic noise that enables outstanding performance from a simple, monolithic device enabling a high detectivity (D*, the figure of merit for detector sensitivity) >2.44 × 109 Jones (cm Hz1/2  W-1 ) using the ultralow flux of a blackbody that mirrors the background emission of objects. These attributes, ease of fabrication, low dark current characteristics, and highly sensitive operation overcome major limitations inherent within modern narrow-bandgap semiconductors, demonstrate practical utility, and suggest that uncooled detectivities superior to many inorganic devices can be achieved at high operating temperatures.

Chiral Diketopyrrolopyrrole-Based Conjugated Polymers with Intramolecular Rotation-Isomeric Conformation Asymmetry for Near-Infrared Circularly Polarized Light-Sensing Organic Phototransistors

Recent advances in chiral nanomaterials interacting with circularly polarized (CP) light open new expectations for optoelectronics in various research fields such as quantum- and biology-related technology. To fully utilize the great potential of chiral optoelectronic devices, the development of chiral optoelectronic devices that function in the near-infrared (NIR) region is required. Herein, we demonstrate a NIR-absorbing, chiroptical, low-band-gap polymer semiconductor for high-performance NIR CP light phototransistors. A newly synthesized diketopyrrolopyrrole-based donor-acceptor-type chiral π-conjugated polymer with an asymmetric alkyl side chain exhibits strong chiroptical activity in a wavelength range of 700-1000 nm. We found that the attachment of an enantiomerically pure stereogenic alkyl substituent to the π-conjugated chromophore backbone led to strong chiroptical activity through symmetry breaking of the π-conjugation of the backbone in a molecular rotational motion while maintaining the coplanar backbone conformation for efficient charge transport. The NIR CP light-sensing phototransistors based on a chiral π-conjugated polymer photoactive single channel layer exhibit a high photoresponsivity of 26 A W-1 under NIR CP light irradiation at 920 nm, leading to excellent NIR CP light distinguishability. This study will provide a rationale and strategy for designing chiral π-conjugated polymers for high-performance NIR chiral optoelectronics.

Green-Solvent-Processed High-Performance Broadband Organic Photodetectors

Solution-processed organic photodetectors with broadband activity have been demonstrated with an environmentally benign solvent, ortho-xylene (o-xylene), as the processing solvent. The organic photodetectors employ a wide band gap polymer donor PBDB-T and a narrow band gap small-molecule non-fullerene acceptor CO1-4F, both dissolvable in o-xylene at a controlled temperature. The o-xylene-processed devices have shown external quantum efficiency of up to 70%, surpassing the counterpart processed with chlorobenzene. With a well-suppressed dark current, the device can also present a high specific detectivity of over 1012 Jones at -2 V within practical operation frequencies and is applicable for photoplethysmography with its fast response. These results further highlight the potential of green-solvent-processed organic photodetectors as a high-performing alternative to their counterparts processed in toxic chlorinated solvents without compromising the excellent photosensing performance.

Interface-Engineered Organic Near-Infrared Photodetector for Imaging Applications

We report a high-speed low dark current near-infrared (NIR) organic photodetector (OPD) on a silicon substrate with amorphous indium gallium zinc oxide (a-IGZO) as the electron transport layer (ETL). In-depth understanding of the origin of dark current is obtained using an elaborate set of characterization techniques, including temperature-dependent current-voltage measurements, current-based deep-level transient spectroscopy (Q-DLTS), and transient photovoltage decay measurements. These characterization results are complemented by energy band structures deduced from ultraviolet photoelectron spectroscopy. The presence of trap states and a strong dependency of activation energy on the applied reverse bias voltage point to a dark current mechanism based on trap-assisted field-enhanced thermal emission (Poole-Frenkel emission). We significantly reduce this emission by introducing a thin interfacial layer between the donor: acceptor blend and the a-IGZO ETL and obtain a dark current as low as 125 pA/cm² at an applied reverse bias of -1 V. Thanks to the use of high-mobility metal-oxide transport layers, a fast photo response time of 639 ns (rise) and 1497 ns (fall) is achieved, which, to the best of our knowledge, is among the fastest reported for NIR OPDs. Finally, we present an imager integrating the NIR OPD on a complementary metal oxide semiconductor read-out circuit, demonstrating the significance of the improved dark current characteristics in capturing high-quality sample images with this technology.

Shockproof Deformable Infrared Radiation Sensors Based on a Polymeric Rubber and Organic Semiconductor H2Pc-CNT Composite

Polymeric rubber and organic semiconductor H2Pc-CNT-composite-based surface- and sandwich-type shockproof deformable infrared radiation (IR) sensors were fabricated using a rubbing-in technique. CNT and CNT-H2Pc (30:70 wt.%) composite layers were deposited on a polymeric rubber substrate as electrodes and active layers, respectively. Under the effect of IR irradiation (0 to 3700 W/m2), the resistance and the impedance of the surface-type sensors decreased up to 1.49 and 1.36 times, respectively. In the same conditions, the resistance and the impedance of the sandwich-type sensors decreased up to 1.46 and 1.35 times, respectively. The temperature coefficients of resistance (TCR) of the surface- and sandwich-type sensors are 1.2 and 1.1, respectively. The novel ratio of the H2Pc-CNT composite ingredients and comparably high value of the TCR make the devices attractive for bolometric applications meant to measure the intensity of infrared radiation. Moreover, given their easy fabrication and low-cost materials, the fabricated devices have great potential for commercialization.

Progress and challenges of emerging MXene based materials for thermoelectric applications

To realize sustainable development, more and more countries forwarded carbon neutrality goal. Accordingly, improving the utilization efficiency of traditional fossil fuel is an effective strategy for this great goal. Keeping this in mind, developing thermoelectric devices to recover waste heat energy resulted in the consumption process of fuel is demonstrated to be promising. High performance thermoelectric devices require advanced materials. MXenes are a kind of 2D materials with a layered structure, which demonstrate excellent thermoelectric performance owing to their unique physical, mechanical, and chemical properties. Also, substantial achievement has been gained during the past few years in synthesizing MXene based materials for thermoelectric devices. In this review, the mainstream synthetic routes of MXene from etching MAX were summarized. Significantly, the current state and challenges of research on improving the performance of MXene based thermoelectrics are explored, including pristine MXene and MXene based composites.

Ultrabroadband Imaging Based on Wafer-Scale Tellurene

High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized. Taking advantage of the surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted exciton separation, in situ formation of out-of-plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron-hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide-spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 10⁷  A W^-1 , 8.2 × 10⁹ % and 4.5 × 10¹⁵  Jones. An ultrabroadband imager is demonstrated and high-resolution photoelectric imaging is realized. The proof-of-concept wafer-scale tellurene-based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of an advanced 2D imaging platform toward next-generation intelligent equipment.

Efficient Near-Infrared Organic Photodetectors with Spectral Response up to 1600 nm for Accurate Alcohol Concentration Detection

The development of near-infrared organic photodetectors (NIR-OPDs) in 1000-1700 nm is essential for medical monitoring, food quality inspection, machine vision, and biomedical imaging. However, when solving the high dark current density (J_D) in bulk-heterojunction (BHJ) NIR-OPDs based on narrow-bandgap systems, it is often accompanied by photocurrent loss, which is a great challenge in achieving high-performance NIR-OPDs. Here, an ideal hybrid pseudo-PHJ (planar-heterojunction)/BHJ structure is proposed to overcome this challenge, which is introducing the N2200 layer between the cathode and BHJ. The introduction of the N2200 raises the external charge injection barrier and reduces the trap density, thus achieving significant suppression of J_D (6.22 × 10^-7 A cm^-2 at -0.2 V bias, about 2 orders of magnitude lower compared to the BHJ NIR-OPDs). Meanwhile, the hybrid structure combines the advantages of PHJ and BHJ, thus maintaining a high photocurrent, resulting in responsivity and detectivity of 18.71 mA W^-1 and 4.19 × 10¹⁰ Jones, respectively, at 1400 nm at -0.2 V bias, which is superior to the performance of BHJ NIR-OPDs. And the hybrid structured NIR-OPDs are proven to rapidly quantify the alcohol content of mixtures to within 2% accuracy, which exhibits great potential for application in the food and pharmaceutical industries.

Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors

High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limit of silicon detectors. Here, we extend the absorption of organic small-molecule semiconductors to below silicon bandgap, and even to 0.77 eV, through introducing the newly designed quinoid-terminals with high Mulliken-electronegativity (5.62 eV). The fabricated photodiode-type NIR OPDs exhibit detectivity (D^*) over 10¹² Jones in 0.41 to 1.2 μm under zero bias with a maximum of 2.9 × 10¹² Jones at 1.02 μm, which is the highest D^* for reported OPDs in photovoltaic-mode with response spectra beyond 1.1 μm. The high D^* in 0.9 to 1.2 μm is comparable to those of commercial InGaAs photodetectors, despite the detection limit of our OPDs is shorter than InGaAs (~1.7 μm). A spectrometer prototype with a wide measurable region (0.4 to 1.25 μm) and NIR imaging under 1.2-μm illumination are demonstrated successfully in OPDs.

Retina-Inspired Organic Photonic Synapses for Selective Detection of SWIR Light

Photonic synapses with the dual function of optical signal detection and information processing can simulate human visual system. However, photonic synapses with selective detection of short-wavelength infrared (SWIR) light have never been reported, which can not only broaden the human vision region but also integrate neuromorphic computation and infrared optical communication. Here, organic photonic synapses based on a new donor-acceptor copolymer P1 are fabricated, which exhibit excellent synaptic characteristics with selective detection for SWIR and extremely low energy consumption (2.85 fJ). The working mechanism is rooted in energy level barriers and unbalanced charge transportation. Moreover, these photonic synapses demonstrate excellent performance in multi-signal logic editing, letter imaging and memory with noise reduction function. This contribution provides ideas of constructing selective-response synapses for artificial visual system and neuromorphic computing.

Towards highly efficient NIR II response up-conversion phosphor enabled by long lifetimes of Er3

The second near-infrared (NIR II) response photon up-conversion (UC) materials show great application prospects in the fields of biology and optical communication. However, it is still an enormous challenge to obtain efficient NIR II response materials. Herein, we develop a series of Er³⁺ doped ternary sulfides phosphors with highly efficient UC emissions under 1532 nm irradiation. β-NaYS₂:Er³⁺ achieves a visible UC efficiency as high as 2.6%, along with high brightness, spectral stability of lights illumination and temperature. Such efficient UC is dominated by excited state absorption, accompanied by the advantage of long lifetimes (⁴I_9/2, 9.24 ms; ⁴I_13/2, 30.27 ms) of excited state levels of Er³⁺, instead of the well-recognized energy transfer UC between sensitizer and activator. NaYS₂:Er³⁺ phosphors are further developed for high-performance underwater communication and narrowband NIR photodetectors. Our findings suggest a novel approach for developing NIR II response UC materials, and simulate new applications, eg., simultaneous NIR and visible optical communication.

Electron-donating amine-interlayer induced n-type doping of polymer:nonfullerene blends for efficient narrowband near-infrared photo-detection

Inherently narrowband near-infrared organic photodetectors are highly desired for many applications, including biological imaging and surveillance. However, they suffer from a low photon-to-charge conversion efficiencies and utilize spectral narrowing techniques which strongly rely on the used material or on a nano-photonic device architecture. Here, we demonstrate a general and facile approach towards wavelength-selective near-infrared phtotodetection through intentionally n-doping 500-600 nm-thick nonfullerene blends. We show that an electron-donating amine-interlayer can induce n-doping, resulting in a localized electric field near the anode and selective collection of photo-generated carriers in this region. As only weakly absorbed photons reach this region, the devices have a narrowband response at wavelengths close to the absorption onset of the blends with a high spectral rejection ratio. These spectrally selective photodetectors exhibit zero-bias external quantum efficiencies of ~20-30% at wavelengths of 900-1100 nm, with a full-width-at-half-maximum of ≤50 nm, as well as detectivities of >10¹² Jones.

Efficient Optoelectronic Devices Enabled by Near-Infrared Organic Semiconductors with a Photoresponse beyond 1050 nm

Organic optoelectronic devices exhibit distinctive photoresponse to the near-infrared (NIR) light and show great potential in many fields. However, the optoelectronic properties of the existing devices hardly meet the technical requirements of new applications such as energy conversion and health sensing, thus raising the demand to develop high-performance NIR organic semiconductors. To address this issue, a new NIR material, namely, BFIC, is designed and synthesized by inserting fluorothieno[3,4-b]thiophene (FTT) as a π-bridge. Since the introduction of FTT can extend the conjugation, stabilize the quinoid resonant structure, and enhance the intramolecular charge transfer, BFIC displays a broad and intense absorption in the NIR region, ranging from 700 to 1050 nm. As a result, the organic solar cell based on BFIC and a polymer donor PTB7-Th realizes a power conversion efficiency of 10.38%. The semitransparent organic solar cell (OSC) shows a power conversion efficiency of 6.15%, accompanied by an average visible transmittance of 38.79% due to the selective photoresponse in the NIR range. The organic photodetector based on PTB7-Th:BFIC delivers a broad spectral response ranging from 330 to 1030 nm with a specific detectivity over 10¹³ Jones under the self-powered mode, which is one of the highest detectivities among the broad-band organic photodetectors.

Enhancing Transition Dipole Moments of Heterocyclic Semiconductors via Rational Nitrogen-Substitution for Sensitive Near Infrared Detection

Designing ultrastrong near-infrared (NIR) absorbing organic semiconductors is a critical prerequisite for sensitive NIR thin film organic photodetectors (OPDs), especially in the region of beyond 900 nm, where the absorption coefficient of commercial single crystalline silicon (c-Si) is below 10³ cm^-1 . Herein, a pyrrolo[3,2-b]thieno[2,3-d]pyrrole heterocyclic core (named as BPPT) with strong electron-donating property and stretched geometry is developed. Relative to their analogue Y6, BPPT-contained molecules, BPPT-4F and BPPT-4Cl, show substantially upshifted and more delocalized highest occupied molecular orbitals, and larger transition dipole moments, leading to bathochromic and hyperchromic absorption spectra extending beyond 1000 nm with very large absorption coefficients (up to 3.7-4.3 × 10⁵ cm^-1 ) as thin films. These values are much higher than those (10⁴ to 1 × 10⁵ cm^-1 ) of typical organic semiconductors, and 1-2 orders higher than those of commercial inorganic materials, such as c-Si, Ge, and InGaAs. The OPDs based on BPPT-4F or BPPT-4Cl blending polymer PBDB-T show high detectivity of above 10¹² Jones in a wide wavelength range of 310-1010 nm with excellent peak values of 1.3-2.2 × 10¹³ Jones, respectively, which are comparable with and even better than those commercial inorganic photodetectors.

Doping Compensation Enables High-Detectivity Infrared Organic Photodiodes for Image Sensing

Infrared organic photodiodes have gained increasing attention due to their great application potentials in night vision, optical communication, and all-weather imaging. However, the commonly occurring high dark current and low detectivity impede infrared photodetectors from portable applications at room temperature. Herein, an efficient and generic doping compensation strategy is developed to improve the detectivity of infrared organic photodiodes. A series of n-type organic semiconductors is investigated, and it is found that doping compensation strategy not only reduces the trap density of states and dark currents, but also restrains the nonradiative recombination with improved charge transport and collection. As a result, an ultralow noise spectral density of 8 × 10^-15 A Hz^-1/2 as well as a high specific detectivity over 10¹³ Jones in 780-1070 nm is achieved at room temperature. More importantly, the high-performance infrared organic photodiodes can be successfully applied in high-pixel-density image arrays without patterning sensing layers. These findings provide important compensation design insights that will be crucial to further improve the performance of infrared organic photodiodes in the future.

Polyimide-Doped Indium-Gallium-Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection

We report a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor for the detection of visible light. The PSL was deposited on a SiO₂ gate insulator by a co-sputtering process using amorphous indium-gallium-zinc oxide (IGZO) and PI targets simultaneously. The PSL acted as both a channel layer and a visible-light absorption layer. PI is one of the few flexible organic materials that can be fabricated into sputtering targets. Compared with the IGZO phototransistor without PI doping, the PSL phototransistor exhibited improved optoelectronic characteristics under illumination with 635 nm red light of 1 mW/mm² intensity; the obtained photoresponsivity ranged from 15.00 to 575.00 A/W, the photosensitivity from 1.38 × 10¹ to 9.86 × 10⁶, and the specific detectivity from 1.35 × 10⁷ to 5.83 × 10¹¹ Jones. These improvements are attributed to subgap states induced by the PI doping, which formed decomposed organic molecules, oxygen vacancies, and metal hydroxides. Furthermore, a flexible PSL phototransistor was fabricated and showed stable optoelectronic characteristics even after 10,000 bending tests.

Infrared Organic Photodetectors Employing Ultralow Bandgap Polymer and Non-Fullerene Acceptors for Biometric Monitoring

Recent efforts in the field of organic photodetectors (OPD) have been focused on extending broadband detection into the near-infrared (NIR) region. Here, two blends of an ultralow bandgap push-pull polymer TQ-T combined with state-of-the-art non-fullerene acceptors, IEICO-4F and Y6, are compared to obtain OPDs for sensing in the NIR beyond 1100 nm, which is the cut off for benchmark Si photodiodes. It is observed that the TQ-T:IEICO-4F device has a superior IR responsivity (0.03 AW^-1 at 1200 nm and -2 V bias) and can detect infrared light up to 1800 nm, while the TQ-T:Y6 blend shows a lower responsivity of 0.01 AW^-1 . Device physics analyses are tied with spectroscopic and morphological studies to link the superior performance of TQ-T:IEICO-4F OPD to its faster charge separation as well as more favorable donor-acceptor domains mixing. In the polymer blend with Y6, the formation of large agglomerates that exceed the exciton diffusion length, which leads to high charge recombination, is observed. An application of these devices as biometric sensors for real-time heart rate monitoring via photoplethysmography, utilizing infrared light, is demonstrated.

Mixed AgBiS2 nanocrystals for photovoltaics and photodetectors

Heavy-metal-free colloidal nanocrystals are gaining due attention as low-cost, semiconducting materials for solution-processed optoelectronic applications. One common limitation of such materials is their limited carrier transport and trap-assisted recombination, which impede the performance of thick photoactive layers. Here we mix small-size and large-size AgBiS2 nanocrystals to judiciously favour the band alignment in photovoltaic and photodetector devices. The absorbing layer of these devices is fabricated in a gradient fashion in order to maximise charge transfer and transport. We implement this strategy to fabricate mixed AgBiS2 thin film solar cells with a power conversion of 7.3%, which significantly surpasses the performance of previously reported devices based on single-batch AgBiS2 nanocrystals. Additionally, this approach allows us to fabricate devices using thicker photoactive layers that show lower dark currents and external quantum efficiencies exceeding 40% over a broad bandwidth - covering the visible and near infrared range beyond 1 μm, thus unleashing the potential of colloidal AgBiS2 nanocrystals in photodetector applications.

Strategies for Computer-Aided Discovery of Novel Open-Shell Polymers

Organic π-conjugated polymers with a triplet ground state have been the focus of recent research for their interesting and unique electronic properties, arising from the presence of the two unpaired electrons. These compounds are usually built from alternating electron-donating and electron-accepting monomer pairs which lower the HOMO-LUMO gap and yield a triplet state instead of the typical singlet ground state. In this paper, we use density functional theory calculations to explore the design rules that govern the creation of a ground-state triplet conjugated polymer and find that a small HOMO-LUMO gap in the singlet state is the best predictor for the existence of a triplet ground state, compared to previous use of a pro-quinoidal bonding character. This work can accelerate the discovery of new stable triplet materials by reducing the computational resources needed for electronic-state calculations and the number of potential candidates for synthesis.

Construction of Laterally Asymmetric Heterojunctions with Sub-Micrometer Resolution by Hierarchical Self-Assembly of Polythiophene Nanofibers

Polymeric semiconductors are crucial candidates for the construction of next-generation flexible and printable electronic devices. By virtue of the successful preparation of monodispersed colloidal solution in orthogonal solvent, poly(3-hexylthiophene) (P3HT) nanofibers are developed into versatile building blocks for nanoelectronics and their compatibilities are verified with photolithographic lift-off technology. Then, the joint efforts from both the bottom-up hierarchical self-assembly and top-down self-alignment technology have led to the realization of lateral asymmetric heterojunctions with resolution better than 1 µm. As a result, planar photovoltaic devices incorporating N,N'-dioctyl-3,4,9,10-perylenedicarboximide and P3HT supramolecular nanowires as active components are constructed with the cathode-to-anode distance being tuned from ≈0.1 to 1-2 µm. Based on such a novel device configuration, an interesting phenomenon of channel-length-dependent photovoltaic efficiency is observed for the first time, strongly suggesting the impact of near-field light intensity on the performance of nanophotonic devices.

A Review on Solution-Processed Organic Phototransistors and Their Recent Developments

Today, more disciplines are intercepting each other, giving rise to “cross-disciplinary” research. Technological advancements in material science and device structure and production have paved the way towards development of new classes of multi-purpose sensory devices. Organic phototransistors (OPTs) are photo-activated sensors based on organic field-effect transistors that convert incident light signals into electrical signals. The organic semiconductor (OSC) layer and three-electrode structure of an OPT offer great advantages for light detection compared to conventional photodetectors and photodiodes, due to their signal amplification and noise reduction characteristics. Solution processing of the active layer enables mass production of OPT devices at significantly reduced cost. The chemical structure of OSCs can be modified accordingly to fulfil detection at various wavelengths for different purposes. Organic phototransistors have attracted substantial interest in a variety of fields, namely biomedical, medical diagnostics, healthcare, energy, security, and environmental monitoring. Lightweight and mechanically flexible and wearable OPTs are suitable alternatives not only at clinical levels but also for point-of-care and home-assisted usage. In this review, we aim to explain different types, working mechanism and figures of merit of organic phototransistors and highlight the recent advances from the literature on development and implementation of OPTs for a broad range of research and real-life applications.

Design and Optimize the Performance of Self-Powered Photodetector Based on PbS/TiS3 Heterostructure by SCAPS-1D

Titanium trisulphide (TiS₃) has been widely used in the field of optoelectronics owing to its superb optical and electronic characteristics. In this work, a self-powered photodetector using bulk PbS/TiS₃ p-n heterojunction is numerically investigated and analyzed by a Solar Cell Capacitance Simulator in one-Dimension (SCAPS-1D) software. The energy bands, electron-holes generation or recombination rate, current density-voltage (J-V), and spectral response properties have been investigated by SCAPS-1D. To improve the performance of photodetectors, the influence of thickness, shallow acceptor or donor density, and defect density are investigated. By optimization, the optimal thickness of the TiS₃ layer and PbS layer are determined to be 2.5 μm and 700 nm, respectively. The density of the superior shallow acceptor (donor) is 10¹⁵ (10²²) cm⁻³. High quality TiS₃ film is required with the defect density of about 10¹⁴ cm⁻³. For the PbS layer, the maximum defect density is 10¹⁷ cm⁻³. As a result, the photodetector based on the heterojunction with optimal parameters exhibits a good photoresponse from 300 nm to 1300 nm. Under the air mass 1.5 global tilt (AM 1.5G) illuminations, the optimal short-circuit current reaches 35.57 mA/cm² and the open circuit voltage is about 870 mV. The responsivity (R) and a detectivity (D*) of the simulated photodetector are 0.36 A W⁻¹ and 3.9 × 10¹³ Jones, respectively. The simulation result provides a promising research direction to further broaden the TiS₃-based optoelectronic device.

Dual-acceptor alloy model delivers high detection performance of organic NIR detectors for real-time arterial pulse monitoring

Near-infrared organic photodetectors (NIR-OPDs) have significant potential in the fields of human sign monitoring, industrial defect detection, and military. We propose a method to construct high-performance NIR-OPDs by introducing narrow-band acceptor materials with very similar structures in bulk heterojunctions (BHJs) so that they form an alloy model during the film formation process, which in turn promotes the generation and dissociation of photogenerated excitons to achieve high-performance NIR detectors. Here, we choose the narrow-band materials IEICO-4F and IEICO-4Cl as dual-acceptors and PTB7-Th as the donor to construct NIR-OPDs. Benefiting from the alloy model formation, the dark current of the device is significantly suppressed compared with the binary control, while the photocurrent of the device is enhanced. The optimized NIR-OPD achieved a detectivity of more than 2.6×1012 Jones at -0.1V bias. With the optimized device performance, we can clearly monitor the human arterial pulse information, and the phases of the cardiac cycle of the heart can be accurately identified. This work demonstrates a new method for constructing highperformance NIR-OPDs and shows great potential for contactless human arterial pulse monitoring.

High-Performance Near-Infrared Photodetectors Based on the Synergy Effect of Short Wavelength Light Filter and Long Wavelength Response of a Perovskite/Polymer Hybrid Structure

Near-infrared photodetectors (NIR-PDs) are widely used in communications, biomedical imaging, and national defense. Here we report a new strategy to prepare a short wavelength light filter based NIR-PDs by introducing an interface layer between the perovskite layer and the polymer layer to achieve the selective passage of carriers. Through the synergistic effect of the perovskite and the interface layer, the short wavelength light component in the signal spectrum is effectively filtered out. The organic polymer layer with a bulk heterojunction structure is applied to realize the absorption and conversion of near-infrared light. The prepared device achieves a maximum external quantum efficiency of 83.7% without bias, a high specific detectivity of 1.52 × 10¹³ Jones, an NIR responsivity of 0.577A/W, and a short response time of 1.73/0.97 μs within the detection range from 770 to 900 nm. All these properties show great advantages compared with other perovskite/polymer hybrid NIR photodetectors that have been reported. This innovative strategy provides a new way to prepare high-performance near-infrared photodetectors.

Redox-Active Heteroatom-Functionalized Polyacetylenes

The discovery of metallic conductivity in polyacetylene [-HC=CH-]_n upon doping represents a landmark achievement. However, the insolubility of polyacetylene and a dearth of methods for its chemical modification have limited its widespread use. Here, we employ a ring-opening metathesis polymerization (ROMP) protocol to prepare functionalized polyacetylenes (fPAs) bearing: (1) electron-deficient boryl (-BR₂ ) and phosphoryl (-P(O)R₂ ) side chains; (2) electron-donating amino (-NR₂ ) groups, and (3) ring-fused 1,2,3-triazolium units via strain-promoted Click chemistry. These functional groups render most of the fPAs soluble and can lead to intense light absorption across the visible to near-IR region. Also, the presence of redox-active boryl and amino groups leads to opposing near-IR optical responses upon (electro)chemical reduction or oxidation. Some of the resulting fPAs show greatly enhanced air stability when compared to known polyacetylenes. Lastly, these fPAs can be cross-linked to yield network materials with the full retention of optical properties.

A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

Metal oxide thin-film transistors have been continuously researched and mass-produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non-oxide hybrid structure. The materials of the absorption layer applied to absorb long-wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next-generation convergence studies combined with other research fields are introduced and future research directions are detailed.

Evolution of the electronic structure in open-shell donor-acceptor organic semiconductors

Most organic semiconductors have closed-shell electronic structures, however, studies have revealed open-shell character emanating from design paradigms such as narrowing the bandgap and controlling the quinoidal-aromatic resonance of the π-system. A fundamental challenge is understanding and identifying the molecular and electronic basis for the transition from a closed- to open-shell electronic structure and connecting the physicochemical properties with (opto)electronic functionality. Here, we report donor-acceptor organic semiconductors comprised of diketopyrrolopyrrole and naphthobisthiadiazole acceptors and various electron-rich donors commonly utilized in constructing high-performance organic semiconductors. Nuclear magnetic resonance, electron spin resonance, magnetic susceptibility measurements, single-crystal X-ray studies, and computational investigations connect the bandgap, π-extension, structural, and electronic features with the emergence of various degrees of diradical character. This work systematically demonstrates the widespread diradical character in the classical donor-acceptor organic semiconductors and provides distinctive insights into their ground state structure-property relationship.

Electrically Switchable Color-Selective Organic Photodetectors for Full-Color Imaging

The present full-color imaging techniques rely on the use of broadband inorganic photodetectors with dedicated color filters, which is one of the practical challenges for large-area, flexible, and high-solution imaging applications. The development of high-performance color-selective photodetectors is one of the key solutions to overcome this challenge. In this work, an electrically switchable color-selective organic photodetector (OPD) comprising a double organic bulk heterojunction structure has been developed for full-color imaging. The color-selective sensing capability over the visible spectrum ranges can be realized by controlling the bias across the OPD, achieving a high responsivity of ∼200 mA/W, a large linear dynamic range of 122 dB, a viewing angle of 120°, and a -3 dB cutoff frequency of >50 kHz. A full-color imaging function has been demonstrated using electrically switchable red-, green-, and blue-color selective OPD sensors with an excellent operational stability. The results of this work provide a practical solution for applications in high-resolution full-color imaging and artificial vision.

An Efficient Narrowband Near-Infrared at 1040 nm Organic Photodetector Realized by Intermolecular Charge Transfer Mediated Coupling Based on a Squaraine Dye

A highly sensitive short-wave infrared (SWIR, λ > 1000 nm) organic photodiode (OPD) is described based on a well-organized nanocrystalline bulk-heterojunction (BHJ) active layer composed of a dicyanovinyl-functionalized squaraine dye (SQ-H) donor material in combination with PC61 BM. Through thermal annealing, dipolar SQ-H chromophores self-assemble in a nanoscale structure with intermolecular charge transfer mediated coupling, resulting in a redshifted and narrow absorption band at 1040 nm as well as enhanced charge carrier mobility. The optimized OPD exhibits an external quantum efficiency (EQE) of 12.3% and a full-width at half-maximum of only 85 nm (815 cm-1 ) at 1050 nm under 0 V, which is the first efficient SWIR OPD based on J-type aggregates. Photoplethysmography application for heart-rate monitoring is successfully demonstrated on flexible substrates without applying reverse bias, indicating the potential of OPDs based on short-range coupled dye aggregates for low-power operating wearable applications.

Supramolecular engineering of charge transfer in wide bandgap organic semiconductors with enhanced visible-to-NIR photoresponse

Organic photodetectors displaying efficient photoelectric response in the near-infrared are typically based on narrow bandgap active materials. Unfortunately, the latter require complex molecular design to ensure sufficient light absorption in the near-infrared region. Here, we show a method combining an unconventional device architecture and ad-hoc supramolecular self-assembly to trigger the emergence of opto-electronic properties yielding to remarkably high near-infrared response using a wide bandgap material as active component. Our optimized vertical phototransistors comprising a network of supramolecular nanowires of N,N'-dioctyl-3,4,9,10-perylenedicarboximide sandwiched between a monolayer graphene bottom-contact and Au nanomesh scaffold top-electrode exhibit ultrasensitive light response to monochromatic light from visible to near-infrared range, with photoresponsivity of 2 × 10⁵ A/W and 1 × 10² A/W, at 570 nm and 940 nm, respectively, hence outperforming devices based on narrow bandgap materials. Moreover, these devices also operate as highly sensitive photoplethysmography tool for health monitoring.

Enhanced Static and Dynamic Properties of Highly Miscible Fullerene-Free Green-Selective Organic Photodetectors

We developed p-n junction organic photodetectors (OPDs) composed of a polymer donor and a nonfullerene acceptor (NFA) to increase both the responsivity (R) and detectivity (D*) while maintaining a narrow wavelength selectivity. The selection of the polymer donor and NFA with similar green (G) absorption is important for achieving G-wavelength selectivity in these OPDs, which differentiates them from current fullerene-based OPDs and NFA-based panchromatic absorption OPDs. In addition, mixing the polymer donor and asymmetric NFA was efficient toward increasing the miscibility and decreasing the interfacial energy difference of the blended films, resulting in the formation of a uniform and well-mixed nanomorphology in the photoconductive layer. Two-dimensional (2D) grazing incidence X-ray diffraction and Fourier-transform infrared spectroscopy revealed that the lamellar ordering of the polymer donor was enhanced in the blend film prepared with an asymmetric NFA, whereas the aggregation of a symmetric NFA in the blend films did not increase the lamellar ordering of the polymer donor. Consequently, we achieved an R value of 0.31 A/W and D* value of 2.0 × 10¹³ Jones with a full width at half-maximum value of 230 nm at -2 V and fast response time of 27 μs without any external bias in the asymmetric NFA-based OPDs. The enhancement in the lamellar ordering and miscibility of the blended films are crucial toward increasing the static and dynamic properties of OPDs.

Broadband infrared photodetection using a narrow bandgap conjugated polymer

Photodetection spanning the short-, mid-, and long-wave infrared (SWIR-LWIR) underpins modern science and technology. Devices using state-of-the-art narrow bandgap semiconductors require complex manufacturing, high costs, and cooling requirements that remain prohibitive for many applications. We report high-performance infrared photodetection from a donor-acceptor conjugated polymer with broadband SWIR-LWIR operation. Electronic correlations within the π-conjugated backbone promote a high-spin ground state, narrow bandgap, long-wavelength absorption, and intrinsic electrical conductivity. These previously unobserved attributes enabled the fabrication of a thin-film photoconductive detector from solution, which demonstrates specific detectivities greater than 2.10 × 10⁹ Jones. These room temperature detectivities closely approach those of cooled epitaxial devices. This work provides a fundamentally new platform for broadly applicable, low-cost, ambient temperature infrared optoelectronics.

Printing Multi-Material Organic Haptic Actuators

Haptic actuators generate touch sensations and provide realism and depth in human-machine interactions. A new generation of soft haptic interfaces is desired to produce the distributed signals over large areas that are required to mimic natural touch interactions. One promising approach is to combine the advantages of organic actuator materials and additive printing technologies. This powerful combination can lead to devices that are ergonomic, readily customizable, and economical for researchers to explore potential benefits and create new haptic applications. Here, an overview of emerging organic actuator materials and digital printing technologies for fabricating haptic actuators is provided. In particular, the focus is on the challenges and potential solutions associated with integration of multi-material actuators, with an eye toward improving the fidelity and robustness of the printing process. Then the progress in achieving compact, lightweight haptic actuators by using an open-source extrusion printer to integrate different polymers and composites in freeform designs is reported. Two haptic interfaces-a tactile surface and a kinesthetic glove-are demonstrated to show that printing with organic materials is a versatile approach for rapid prototyping of various types of haptic devices.

Shortwave infrared-absorbing squaraine dyes for all-organic optical upconversion devices

Shortwave infrared (SWIR) optical sensing and imaging are essential to an increasing number of next-generation applications in communications, process control or medical imaging. An all-organic SWIR upconversion device (OUC) consists of an organic SWIR sensitive photodetector (PD) and an organic light-emitting diode (OLED), connected in series. OUCs directly convert SWIR to visible photons, which potentially provides a low-cost alternative to the current inorganic compound-based SWIR imaging technology. For OUC applications, only few organic materials have been reported with peak absorption past 1000 nm and simultaneous small absorption in the visible. Here, we synthesized a series of thermally stable high-extinction coefficient donor-substituted benz[cd]indole-capped SWIR squaraine dyes. First, we coupled the phenyl-, carbazole-, and thienyl-substituted benz[cd]indoles with squaric acid (to obtain the SQ dye family). We then combined these donors with the dicyanomethylene-substituted squaraine acceptor unit, to obtain the dicyanomethylene-functionalized squaraine DCSQ family. In the solid state, the absorbance of all dyes extended considerably beyond 1100 nm. For the carbazole- and thienyl-substituted DCSQ dyes, even the peak absorptions in solution were in the SWIR, at 1008 nm and 1014 nm. We fabricated DCSQ PDs with an external photon-to-current efficiency over 30%. We then combined the PD with a fluorescent OLED and fabricated long-term stable OUCs with peak sensitivity at 1020 nm, extending to beyond 1200 nm. Our OUCs are characterized by a very low dark luminance (<10^-2 cd m^-2 at below 6 V) in the absence of SWIR light, and a low turn-on voltage of 2 V when SWIR light is present.

Effective Dark Current Suppression for High-Detectivity Organic Near-Infrared Photodetectors Using a Non-Fullerene Acceptor

Near-infrared organic photodetectors (NIR OPDs) have attracted considerable attention because of their inherent advantages such as a tailorable light absorption property, low-cost fabrication, compatibility with flexible substrates, and room-temperature operation. In particular, the development of NIR detection between 900 and 950 nm is crucial for noise-free communication in ambient environments. In this work, we demonstrate high-detectivity NIR OPDs at 900-950 nm by employing a non-fullerene acceptor (ITIC) used with an NIR-absorbing conjugated polymer (PNIR) for bulk heterojunction (BHJ), which significantly suppressed dark current. Systemic characterizations including electrical, structural, and morphological analyses revealed that ITIC effectively reduces charge recombination during the operation of the OPDs under NIR illumination, resulting in a dark current reduction and high detectivity of over 3.2 × 10¹¹ Jones at 900-950 nm. The results presented here demonstrate that utilizing a non-fullerene acceptor for BHJ-type NIR OPDs is evidently a strategic approach for the simultaneous achievement of the low dark current and high-detectivity of NIR OPDs.