1
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Lv X, Su Y, Xiang H, Yang L, Chen X, Wang Y, Zhang K, Tang J, Ye Y, Cai B, Ma X, Wang X, Zeng H. TOP-Zn Steric Hindrance Effect Enables Ultra-Uniform CsPbX 3 Quantum Dots for Wide-Color Gamut Displays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2409308. [PMID: 40190203 DOI: 10.1002/adma.202409308] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2024] [Revised: 03/12/2025] [Indexed: 05/20/2025]
Abstract
Perovskite quantum dots (PQDs) are expected to be an ideal candidate for wide-color gamut displays owing to their high color purity. However, their color purity is challenged by remarkable spectral broadening due to non-uniform size distribution and crystal defects. Here, a ligand-ion (TOP-Zn) complex-modulating nucleation strategy is proposed to depress spectral broadening. This is achieved by enhancing the steric hindrance effect during lead-halogen octahedral assembly and reducing the reaction activity/sites of the system. This strategy is universal and has been confirmed to be effective for blue, green, and red PQDs, achieving narrowed spectral full-width-at-half-maximum (FWHM) of 15, 17, and 25 nm, respectively. These FWHMs are record-breaking and contribute to a wide color gamut coverage of ≈130% National Television Standards Committee and ≈100% Rec. 2020 standard. Meanwhile, these PQD-based light-emitting diodes (PeLEDs) exhibit a high external quantum efficiency (EQE) of exceeding 20% at their pure color range. These results provide a feasible path to achieve ultra-uniform and pure-color luminescent PQDs for wide-color gamut displays.
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Affiliation(s)
- Xinyi Lv
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China
| | - Yuqin Su
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China
| | - Hengyang Xiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China
| | - Linxiang Yang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China
| | - Xinrui Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China
| | - Yifei Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China
| | - Kun Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China
| | - Jiahao Tang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China
| | - Yuhui Ye
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, Jiangsu, 210093, China
| | - Bo Cai
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, Jiangsu, 210023, China
| | - Xueying Ma
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, Jiangsu, 210093, China
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, Jiangsu, 210093, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China
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2
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Liu H, Li T, Wang Y. 2-Bromohexadecanoic Acid as a Novel Bidentate Ligand for Passivation of Cesium Lead Halide Perovskite Nanocrystals with Near-Unity Photoluminescence Quantum Yield and Superior Photostability. ACS APPLIED MATERIALS & INTERFACES 2025; 17:24146-24156. [PMID: 40223428 DOI: 10.1021/acsami.5c01683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/15/2025]
Abstract
Halide vacancies on the surfaces of cesium lead halide perovskite (CsPbX3, X = Cl, Br, or I) nanocrystals (NCs) play a crucial role in their photoluminescence quantum yield (PLQY) and photostability. However, effectively passivating these vacancies remains a challenge. Here, 2-bromohexadecanoic acid (BHA) is introduced as a bidentate auxiliary ligand for CsPbX3 NCs. The CsPbBr3 and CsPbBr1.5I1.5 NCs, comodified with BHA, oleic acid (OA), and oleylamine (OLA) with 20% of OA substituted by BHA, are synthesized using a hot-injection technique and are designated as BHA-CsPbBr3 and BHA-CsPbBr1.5I1.5 NCs. The BHA-CsPbBr3 NCs exhibit a PLQY of 97% and retain 42.19% of their original intensity after 48 h of continuous ultraviolet light exposure. The photoluminescence (PL) properties, stability, and PL recombination mechanism of the BHA-CsPbBr3 NCs are investigated in detail. It is believed that the carboxyl oxygen and ortho-bromine atoms enhance the binding strength of BHA to the surface of CsPbX3. Additionally, the Br- ions produced from the biomolecular nucleophilic substitution reaction between BHA and OLA partially occupy the anionic vacancies on the surface of CsPbX3. These interactions reduce the halide vacancies and enhance the PL performance of CsPbX3.
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Affiliation(s)
- Huiping Liu
- School of Materials and Energy, National and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology of National Development and Reform Commission, Lanzhou University, Lanzhou 730000, P. R. China
| | - Tianrong Li
- School of Materials and Energy, National and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology of National Development and Reform Commission, Lanzhou University, Lanzhou 730000, P. R. China
| | - Yuhua Wang
- School of Materials and Energy, National and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology of National Development and Reform Commission, Lanzhou University, Lanzhou 730000, P. R. China
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3
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Liu Y, Ma Z, Zhang J, He Y, Dai J, Li X, Shi Z, Manna L. Light-Emitting Diodes Based on Metal Halide Perovskite and Perovskite Related Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2415606. [PMID: 39887795 DOI: 10.1002/adma.202415606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2024] [Revised: 12/18/2024] [Indexed: 02/01/2025]
Abstract
Light-emitting diodes (LEDs) based on halide perovskite nanocrystals have attracted extensive attention due to their considerable luminescence efficiency, wide color gamut, high color purity, and facile material synthesis. Since the first demonstration of LEDs based on MAPbBr3 nanocrystals was reported in 2014, the community has witnessed a rapid development in their performances. In this review, a historical perspective of the development of LEDs based on halide perovskite nanocrystals is provided and then a comprehensive survey of current strategies for high-efficiency lead-based perovskite nanocrystals LEDs, including synthesis optimization, ion doping/alloying, and shell coating is presented. Then the basic characteristics and emission mechanisms of lead-free perovskite and perovskite-related nanocrystals emitters in environmentally friendly LEDs, from the standpoint of different emission colors are reviewed. Finally, the progress in LED applications is covered and an outlook of the opportunities and challenges for future developments in this field is provided.
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Affiliation(s)
- Ying Liu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Yanni He
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jinfei Dai
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Liberato Manna
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
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4
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Fei WL, Li SN, Xie JC, Li SM, Liu WZ, Zhang Q, Chen S, Wang YK, Liao LS. X-Type Ligands Effect on the Operational Stability of Heavy-Metal-Free Quantum Dot Light-Emitting Diodes. NANO LETTERS 2024; 24:14066-14072. [PMID: 39466907 DOI: 10.1021/acs.nanolett.4c04032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/30/2024]
Abstract
ZnSeTe quantum dots (QDs) offer an efficient avenue for realizing heavy-metal-free light-emitting diodes (LEDs) that meet the Rec.2100 blue standard. Synthetic core-shell engineering has enabled big advances in the external quantum efficiency (EQE) of ZnSeTe QD-LEDs. However, the mechanisms behind the degradation of the operational stability of ZnSeTe QD-LEDs remain relatively unexplored. In this study, we explore the impact of ligand density and composition on both material and device stability. We developed a solid-film ligand exchange utilizing an inorganic X-type ligand (zinc chloride), revealing that the substitution of inorganic ligands for organic counterparts significantly influences the stability of both materials and devices.
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Affiliation(s)
- Wen-Long Fei
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Sheng-Nan Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Jia-Chen Xie
- Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, Jiangsu, China
| | - Sheng-Ming Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Wei-Zhi Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Qiao Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Song Chen
- Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, Jiangsu, China
| | - Ya-Kun Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Liang-Sheng Liao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa 999078, Macau SAR, China
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5
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Li X, Teng L, Ren Y, Liu R, Zhan X, Sun H, Zhang W, Ding J, Zhu H. Ultrafast Rejuvenation of Aged CsPbI 3 Quantum Dots and Efficiency Improvement by Sequential 1-Dodecanethiol Post-Treatment Strategy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:43869-43879. [PMID: 39121335 DOI: 10.1021/acsami.4c10194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/11/2024]
Abstract
Metal halide perovskite CsPbI3 quantum dots (QDs) have sparked widespread research due to their intriguing optoelectronic. However, the CsPbI3 QDs undergo inevitable aging and luminescence quenching caused by the weak binding ability of oleate (OA-)/oleylammonium (OAm+), hindering further practical application. Herein, we have realized ultrafast rejuvenation of the aged CsPbI3 QDs that have lost their photoluminescence performance based on a 1-dodecanethiol (DDT) surface ligand to restore the outstanding red light emission with a high photoluminescence quantum yield (PLQY) from 25 to 90%. Furthermore, CsPbI3 QDs with DDT surface treatment maintain a cubic phase and high PLQY value even after 35 days. The DDT ligands can form a strong bond with Pb2+ and passivate I- ion vacancies, enhancing radiative recombination efficiency and thereby improving the PLQY of the QDs. The stable yet easily accessible surface of the DDT-capped CsPbI3 QDs was successfully employed as white LEDs and exhibited considerable enhanced luminous performance, suggesting promising application in solid-state lighting fields.
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Affiliation(s)
- Xin Li
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Longxun Teng
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Yening Ren
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Rui Liu
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Xiaoyuan Zhan
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Haiqing Sun
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Weiwei Zhang
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Jianxu Ding
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Huiling Zhu
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China
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6
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Ye J, Gaur D, Mi C, Chen Z, Fernández IL, Zhao H, Dong Y, Polavarapu L, Hoye RLZ. Strongly-confined colloidal lead-halide perovskite quantum dots: from synthesis to applications. Chem Soc Rev 2024; 53:8095-8122. [PMID: 38894687 DOI: 10.1039/d4cs00077c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
Colloidal semiconductor nanocrystals enable the realization and exploitation of quantum phenomena in a controlled manner, and can be scaled up for commercial uses. These materials have become important for a wide range of applications, from ultrahigh definition displays, to solar cells, quantum computing, bioimaging, optical communications, and many more. Over the last decade, lead-halide perovskite nanocrystals have rapidly gained prominence as efficient semiconductors. Although the majority of studies have focused on large nanocrystals in the weak- to intermediate-confinement regime, quantum dots (QDs) in the strongly-confined regime (with sizes smaller than the Bohr diameter, which ranges from 4-12 nm for lead-halide perovskites) offer unique opportunities, including polarized light emission and color-pure, stable luminescence in the region that is unattainable by perovskites with single-halide compositions. In this tutorial review, we bring together the latest insights into this emerging and rapidly growing area, focusing on the synthesis, steady-state optical properties (including exciton fine-structure splitting), and transient kinetics (including hot carrier cooling) of strongly-confined perovskite QDs. We also discuss recent advances in their applications, including single photon emission for quantum technologies, as well as light-emitting diodes. We finish with our perspectives on future challenges and opportunities for strongly-confined QDs, particularly around improving the control over monodispersity and stability, important fundamental questions on the photophysics, and paths forward to improve the performance of perovskite QDs in light-emitting diodes.
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Affiliation(s)
- Junzhi Ye
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK.
| | - Deepika Gaur
- CINBIO, Universidade de Vigo, Materials Chemistry and Physics Group, Department of Physical Chemistry Campus Universitario As Lagoas, Marcosende 36310, Vigo, Spain.
| | - Chenjia Mi
- Department of Chemistry and Biochemistry, The University of Oklahoma, Norman, Oklahoma 73019, USA
| | - Zijian Chen
- Centre for Intelligent and Biomimetic Systems, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 440305, China
| | - Iago López Fernández
- CINBIO, Universidade de Vigo, Materials Chemistry and Physics Group, Department of Physical Chemistry Campus Universitario As Lagoas, Marcosende 36310, Vigo, Spain.
| | - Haitao Zhao
- Centre for Intelligent and Biomimetic Systems, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 440305, China
| | - Yitong Dong
- Department of Chemistry and Biochemistry, The University of Oklahoma, Norman, Oklahoma 73019, USA
| | - Lakshminarayana Polavarapu
- CINBIO, Universidade de Vigo, Materials Chemistry and Physics Group, Department of Physical Chemistry Campus Universitario As Lagoas, Marcosende 36310, Vigo, Spain.
| | - Robert L Z Hoye
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK.
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7
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Li Y, Deng M, Zhang X, Xu T, Wang X, Yao Z, Wang Q, Qian L, Xiang C. Stable and efficient CsPbI 3 quantum-dot light-emitting diodes with strong quantum confinement. Nat Commun 2024; 15:5696. [PMID: 38972890 PMCID: PMC11228028 DOI: 10.1038/s41467-024-50022-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 06/27/2024] [Indexed: 07/09/2024] Open
Abstract
Even though lead halide perovskite has been demonstrated as a promising optoelectronic material for next-generation display applications, achieving high-efficiency and stable pure-red (620~635 nm) emission to cover the full visible wavelength is still challenging. Here, we report perovskite light-emitting diodes emitting pure-red light at 628 nm achieving high external quantum efficiencies of 26.04%. The performance is attributed to successful synthesizing strongly confined CsPbI3 quantum dots with good stability. The strong binding 2-naphthalene sulfonic acid ligands are introduced after nucleation to suppress Ostwald ripening, meanwhile, ammonium hexafluorophosphate exchanges long chain ligands and avoids regrowth by strong binding during the purification process. Both ligands enhance the charge transport ability of CsPbI3 quantum dots. The state-of-the-art synthesis of pure red CsPbI3 quantum dots achieves 94% high quantum efficiency, which can maintain over 80% after 50 days, providing a method for synthesizing stable strong confined perovskite quantum dots.
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Affiliation(s)
- Yanming Li
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo, Zhejiang, 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, P. R. China, Ningbo, 315300, China
| | - Ming Deng
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo, Zhejiang, 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, P. R. China, Ningbo, 315300, China
- Ningbo University, Ningbo, Zhejiang, 315211, China
| | - Xuanyu Zhang
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo, Zhejiang, 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, P. R. China, Ningbo, 315300, China
- University of Nottingham Ningbo China, Ningbo, 315100, China
| | - Ting Xu
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, China
| | - Ximeng Wang
- Department of Engineering Physics, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Zhiwei Yao
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo, Zhejiang, 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, P. R. China, Ningbo, 315300, China
| | - Qiangqiang Wang
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo, Zhejiang, 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, P. R. China, Ningbo, 315300, China
- Ningbo University, Ningbo, Zhejiang, 315211, China
| | - Lei Qian
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo, Zhejiang, 315201, China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, P. R. China, Ningbo, 315300, China
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo, Zhejiang, 315201, China
| | - Chaoyu Xiang
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo, Zhejiang, 315201, China.
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, P. R. China, Ningbo, 315300, China.
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo, Zhejiang, 315201, China.
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8
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Rahman SU, Song YH, Yao HB. Modification strategies of lead halide perovskite nanocrystals for efficient and stable LEDs. Chem Commun (Camb) 2024; 60:6988-6998. [PMID: 38895748 DOI: 10.1039/d4cc02072c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
Lead halide perovskite nanocrystals (PNCs) hold immense promise in high-performance light-emitting diodes (LEDs) for future high-definition displays. Their adjustable bandgaps, vivid colors, and good carrier mobility are key factors that make them a potential game-changer. However, to fully harness their potential, the efficiency and long-term stability of PNCs-based light-emitting diodes (PNC-LEDs) must be enhanced. Recent material research results have shed light on the leading cause of performance decline in PNC-LEDs, which is ionic migration linked to surface defects and grain boundary imperfections. This review aims to present recent advancements in the modification strategies of PNCs, focusing on obtaining high-quality PNCs for LEDs. The PNC modification strategies are first summarized, including crystal structure regulation, nanocrystal size tuning, ligand exchange, and surface passivation. Then, the effects of these material design aspects on LED device performances, such as efficiency, brightness, and stability, are presented. Based on the efficient modification strategies, we propose promising material design insights for efficient and stable PNC-LEDs.
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Affiliation(s)
- Sami Ur Rahman
- Hefei National Research Centre for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yong-Hui Song
- Hefei National Research Centre for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- School of Materials Science and Engineering, Anhui University, Hefei, Anhui 230601, China
| | - Hong-Bin Yao
- Hefei National Research Centre for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
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9
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Guo J, Xie M, Li H, Zhang L, Zhang L, Zhang X, Zheng W, Tian J. High Efficiency and Low Roll-Off Pure-Red Perovskite LED Enabled by Simultaneously Inhibiting Auger and Trap Recombination of Quantum Dots. NANO LETTERS 2024; 24:6410-6416. [PMID: 38767286 DOI: 10.1021/acs.nanolett.4c01441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
CsPbI3 perovskite quantum dots (QDs) could achieve pure-red emission by reducing their size, but the increased exciton binding energy (EB) and surface defects for the small-sized QDs (SQDs) cause severe Auger and trap recombinations, thus worsening their electroluminescence (EL) performance. Herein, we utilize the dangling bonds of the SQDs as a driving force to accelerate KI dissolution to solve its low solubility in nonpolar solvents, thereby allowing K+ and I- to bond to the surface of SQDs. The EB of the SQDs was decreased from 305 to 51 meV because of the attraction of K+ to electrons, meanwhile surface vacancies were passivated by K+ and I-. The Auger and trap recombinations were simultaneously suppressed by this difunctional ligand. The SQD-based light-emitting diode showed a stable pure-red EL peak of 639 nm, an external quantum efficiency of 25.1% with low roll-off, and a brightness of 5934 cd m-2.
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Affiliation(s)
- Jie Guo
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
- Key Laboratory of Automobile Materials Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China
| | - Mingyuan Xie
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, China
| | - Hangren Li
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Lin Zhang
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Linxing Zhang
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China
| | - Weitao Zheng
- Key Laboratory of Automobile Materials Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
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10
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Jiang J, Shi M, Xia Z, Cheng Y, Chu Z, Zhang W, Li J, Yin Z, You J, Zhang X. Efficient pure-red perovskite light-emitting diodes with strong passivation via ultrasmall-sized molecules. SCIENCE ADVANCES 2024; 10:eadn5683. [PMID: 38701203 PMCID: PMC11067999 DOI: 10.1126/sciadv.adn5683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Accepted: 04/02/2024] [Indexed: 05/05/2024]
Abstract
Perovskite light-emitting diodes (PeLEDs) have attracted great attention in recent years; however, the halogen vacancy defects in perovskite notably hamper the development of high-efficiency devices. Previously, large-sized passivation agents have been usually used, while the effect of defect passivation is limited due to the weak bonding or the large space steric hindrance. Here, we predict that the ultrasmall-sized formate (Fa) and acetate (Ac) have more efficient passivation ability because of the stronger binding with the perovskite, as demonstrated by density functional theory calculation. We introduce ultrasmall-sized cesium salts (CsFa/CsAc) into buried interface, which can also diffuse into the bulk, resulting in both buried interface and bulk passivation. In addition, the improved perovskite growth has been found due to the enhanced hydrophily after introducing CsFa/CsAc as additive. According to these advantages, a pure-red PeLED with 24.2% efficiency at 639 nm has been achieved.
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Affiliation(s)
- Ji Jiang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Mingming Shi
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhengchang Xia
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yong Cheng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zema Chu
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Wei Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Jingzhen Li
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhigang Yin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jingbi You
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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11
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Li H, Feng Y, Zhu M, Gao Y, Fan C, Cui Q, Cai Q, Yang K, He H, Dai X, Huang J, Ye Z. Nanosurface-reconstructed perovskite for highly efficient and stable active-matrix light-emitting diode display. NATURE NANOTECHNOLOGY 2024; 19:638-645. [PMID: 38649747 DOI: 10.1038/s41565-024-01652-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 03/13/2024] [Indexed: 04/25/2024]
Abstract
Perovskite quantum dots (QDs) are promising for various photonic applications due to their high colour purity, tunable optoelectronic properties and excellent solution processability. Surface features impact their optoelectronic properties, and surface defects remain a major obstacle to progress. Here we develop a strategy utilizing diisooctylphosphinic acid-mediated synthesis combined with hydriodic acid-etching-driven nanosurface reconstruction to stabilize CsPbI3 QDs. Diisooctylphosphinic acid strongly adsorbs to the QDs and increases the formation energy of halide vacancies, enabling nanosurface reconstruction. The QD film with nanosurface reconstruction shows enhanced phase stability, improved photoluminescence endurance under thermal stress and electric field conditions, and a higher activation energy for ion migration. Consequently, we demonstrate perovskite light-emitting diodes (LEDs) that feature an electroluminescence peak at 644 nm. These LEDs achieve an external quantum efficiency of 28.5% and an operational half-lifetime surpassing 30 h at an initial luminance of 100 cd m-2, marking a tenfold improvement over previously published studies. The integration of these high-performance LEDs with specifically designed thin-film transistor circuits enables the demonstration of solution-processed active-matrix perovskite displays that show a peak external quantum efficiency of 23.6% at a display brightness of 300 cd m-2. This work showcases nanosurface reconstruction as a pivotal pathway towards high-performance QD-based optoelectronic devices.
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Affiliation(s)
- Hongjin Li
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China
| | - Yifeng Feng
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China
| | - Meiyi Zhu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, People's Republic of China
| | - Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China
| | - Chao Fan
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, People's Republic of China
| | - Qiaopeng Cui
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China
| | - Ke Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, People's Republic of China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, People's Republic of China.
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, People's Republic of China.
| | - Jingyun Huang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, People's Republic of China.
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, People's Republic of China.
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, People's Republic of China.
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12
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Li LY, Song YH, Yang JN, Ru XC, Yin YC, Yao HB. Short-branched alkyl sulfobetaine-passivated CsPbBr 3 nanocrystals for efficient green light emitting diodes. NANOSCALE 2024; 16:7387-7395. [PMID: 38545886 DOI: 10.1039/d4nr00965g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
Inorganic cesium lead bromide nanocrystals (CsPbBr3 NCs) hold promising prospects for high performance green light-emitting diodes (LEDs) due to their exceptional color purity and high luminescence efficiency. However, the common ligands employed for passivating these indispensable NCs, such as long-chain organic ligands like oleic acid and oleylamine (OA/OAm), display highly dynamic binding and electronic insulating issues, thereby resulting in a low efficiency of the as-fabricated LEDs. Herein, we report a new zwitterionic short-branched alkyl sulfobetaine ligand, namely trioctyl(propyl-3-sulfonate) ammonium betaine (TOAB), to in situ passivate CsPbBr3 NCs via a feasible one-step solution synthesis, enabling efficiency improvement of CsPbBr3 NC-based LEDs. The zwitterionic TOAB ligand not only strengthened the surface passivation of CsPbBr3 NCs with a high photoluminescence quantum yield (PLQY) of 97%, but also enhanced the carrier transport in the fabricated CsPbBr3 NC thin films due to the short-branched alkyl design. Consequently, CsPbBr3 NCs passivated with TOAB achieved a green LED with an external quantum efficiency (EQE) of 7.3% and a maximum luminance of 5716 cd m-2, surpassing those of LEDs based on insulating long-chain ligand-passivated NCs. Our work provides an effective surface passivation ligand design to enhance the performance of CsPbBr3 NC-based LEDs.
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Affiliation(s)
- Lian-Yue Li
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yong-Hui Song
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jun-Nan Yang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xue-Chen Ru
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yi-Chen Yin
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hong-Bin Yao
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
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13
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He X, Zheng Y, Luo Z, Wei Y, Liu Y, Xie C, Li C, Peng D, Quan Z. Bright Circularly Polarized Mechanoluminescence from 0D Hybrid Manganese Halides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309906. [PMID: 38228314 DOI: 10.1002/adma.202309906] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2023] [Revised: 01/12/2024] [Indexed: 01/18/2024]
Abstract
Hybrid metal halides (HMHs) with efficient circularly polarized luminescence (CPL) have application prospects in many fields, due to their abundant host-guest structures and high photoluminescence quantum yield (PLQY). However, CPLs in HMHs are predominantly excited by light or electricity, limiting their use in multivariate environments. It is necessary to explore a novel excitation method to extend the application of chiral HMHs as smart stimuli-responsive optical materials. In this work, an enantiomeric pair of 0D hybrid manganese bromides, [H2(2R,4R)-(+)/(2S,4S)-(-)-2,4-bis(diphenylphosphino)pentane]MnBr4 [(R/S)-1] is presented, which exhibits efficient CPL emissions with near-unity PLQYs and high dissymmetry factors of ± 2.0 × 10-3. Notably, (R/S)-1 compounds exhibit unprecedented and bright circularly polarized mechanoluminescence (CPML) emissions under mechanical stimulation. Moreover, (R/S)-1 possess high mechanical force sensitivities with mechanoluminescence (ML) emissions detectable under 0.1 N force stimulation. Furthermore, this ML emission exhibits an extraordinary antithermal quenching effect in the temperature range of 300-380 K, which is revealed to originate from a thermal activation energy compensation mechanism from trap levels to Mn(II) 4T1 level. Based on their intriguing optical properties, these compounds as chiral force-responsive materials are demonstrated in multilevel confidential information encryption.
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Affiliation(s)
- Xin He
- Department of Chemistry, and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Yuantian Zheng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, and Guangdong Province College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Zhishan Luo
- Department of Chemistry, and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Yi Wei
- Department of Chemistry, and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Yulian Liu
- Department of Chemistry, and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Chenlong Xie
- Department of Chemistry, and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Chen Li
- Department of Chemistry, and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Dengfeng Peng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, and Guangdong Province College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Zewei Quan
- Department of Chemistry, and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
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14
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Feng Y, Li H, Zhu M, Gao Y, Cai Q, Lu G, Dai X, Ye Z, He H. Nucleophilic Reaction-Enabled Chloride Modification on CsPbI 3 Quantum Dots for Pure Red Light-Emitting Diodes with Efficiency Exceeding 26 . Angew Chem Int Ed Engl 2024; 63:e202318777. [PMID: 38258990 DOI: 10.1002/anie.202318777] [Citation(s) in RCA: 22] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Indexed: 01/24/2024]
Abstract
High-performance pure red perovskite light-emitting diodes (PeLEDs) with an emission wavelength shorter than 650 nm are ideal for wide-color-gamut displays, yet remain an unprecedented challenge to progress. Mixed-halide CsPb(Br/I)3 emitter-based PeLEDs suffer spectral stability induced by halide phase segregation and CsPbI3 quantum dots (QDs) suffer from a compromise between emission wavelength and electroluminescence efficiency. Here, we demonstrate efficient pure red PeLEDs with an emission centered at 638 nm based on PbClx -modified CsPbI3 QDs. A nucleophilic reaction that releases chloride ions and manipulates the ligand equilibrium of the colloidal system is developed to synthesize the pure red emission QDs. The comprehensive structural and spectroscopic characterizations evidence the formation of PbClx outside the CsPbI3 QDs, which regulates exciton recombination and prevents the exciton from dissociation induced by surface defects. In consequence, PeLEDs based on PbClx -modified CsPbI3 QDs with superior optoelectronic properties demonstrate stable electroluminescence spectra at high driving voltages, a record external quantum efficiency of 26.1 %, optimal efficiency roll-off of 16.0 % at 1000 cd m-2 , and a half lifetime of 7.5 hours at 100 cd m-2 , representing the state-of-the-art pure red PeLEDs. This work provides new insight into constructing the carrier-confined structure on perovskite QDs for high-performance PeLEDs.
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Affiliation(s)
- Yifeng Feng
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Hongjin Li
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Meiyi Zhu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
| | - Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Guochao Lu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
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15
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Dai J, Roshan H, De Franco M, Goldoni L, De Boni F, Xi J, Yuan F, Dong H, Wu Z, Di Stasio F, Manna L. Partial Ligand Stripping from CsPbBr 3 Nanocrystals Improves Their Performance in Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11627-11636. [PMID: 38381521 PMCID: PMC11932522 DOI: 10.1021/acsami.3c15201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2023] [Revised: 01/31/2024] [Accepted: 02/01/2024] [Indexed: 02/23/2024]
Abstract
Halide perovskite nanocrystals (NCs), specifically CsPbBr3, have attracted considerable interest due to their remarkable optical properties for optoelectronic devices. To achieve high-efficiency light-emitting diodes (LEDs) based on CsPbBr3 nanocrystals (NCs), it is crucial to optimize both their photoluminescence quantum yield (PLQY) and carrier transport properties when they are deposited to form films on substrates. While the exchange of native ligands with didodecyl dimethylammonium bromide (DDAB) ligand pairs has been successful in boosting their PLQY, dense DDAB coverage on the surface of NCs should impede carrier transport and limit device efficiency. Following our previous work, here, we use oleyl phosphonic acid (OLPA) as a selective stripping agent to remove a fraction of DDAB from the NC surface and demonstrate that such stripping enhances carrier transport while maintaining a high PLQY. Through systematic optimization of OLPA dosage, we significantly improve the performance of CsPbBr3 LEDs, achieving a maximum external quantum efficiency (EQE) of 15.1% at 516 nm and a maximum brightness of 5931 cd m-2. These findings underscore the potential of controlled ligand stripping to enhance the performance of CsPbBr3 NC-based optoelectronic devices.
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Affiliation(s)
- Jinfei Dai
- Key
Laboratory for Physical Electronics and Devices of the Ministry of
Education & Shaanxi Key Lab of Information Photonic Technique,
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Hossein Roshan
- Photonic
Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Manuela De Franco
- Photonic
Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
- Università
degli Studi di Genova, Via Dodecaneso 31, 16146Genova, Italy
| | - Luca Goldoni
- Materials
Characterization Facility, Istituto Italiano
di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Francesco De Boni
- Materials
Characterization Facility, Istituto Italiano
di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Jun Xi
- Key
Laboratory for Physical Electronics and Devices of the Ministry of
Education & Shaanxi Key Lab of Information Photonic Technique,
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Fang Yuan
- Key
Laboratory for Physical Electronics and Devices of the Ministry of
Education & Shaanxi Key Lab of Information Photonic Technique,
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Hua Dong
- Key
Laboratory for Physical Electronics and Devices of the Ministry of
Education & Shaanxi Key Lab of Information Photonic Technique,
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Zhaoxin Wu
- Key
Laboratory for Physical Electronics and Devices of the Ministry of
Education & Shaanxi Key Lab of Information Photonic Technique,
School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Francesco Di Stasio
- Photonic
Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
| | - Liberato Manna
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
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16
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S S, Suresh S, Subramaniam MR, Batabyal SK. Improved photoluminescence stability and defect passivation in SbBr 3 post-treated CsPbBr 3 quantum dots under ambient conditions. LUMINESCENCE 2024; 39:e4706. [PMID: 38483095 DOI: 10.1002/bio.4706] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Revised: 02/10/2024] [Accepted: 02/12/2024] [Indexed: 03/22/2024]
Abstract
Inorganic cesium lead halide perovskites have evoked wide popularity because of their excellent optoelectronic properties, high photoluminescence (PL) quantum yield (PLQY), and narrowband emission. Here, cesium lead bromide (CsPbBr3 ) quantum dots (QDs) were synthesized via the ligand-assisted re-precipitation method. Post-synthesis treatment of CsPbBr3 QDs using antimony tribromide improved the PL stability and optoelectronic properties of the QDs. In addition, the PLQY of the post-treated sample was enhanced to 91% via post-treatment, and the luminescence observed was maintained for 8 days. The post-synthesis treatment ensured defect passivation and improved the stability of CsPbBr3 perovskite QDs. High-resolution transmission electron microscopy revealed the presence of more ordered, uniform-sized CsPbBr3 QDs after post-synthesis treatment, and the uniformity of the sample improved as the day passed. The formation of a mixed crystal phase was observed from X-ray diffraction in both as-synthesized, as well as post-treated QDs samples with the possibility of a polycrystalline nature in the post-treated CsPbBr3 QDs as per the selected area electron diffraction pattern. The X-ray photoelectron spectroscopy spectra confirmed the presence of antimony and the possibility of defect passivation in the post-treated samples. These QDs can act as potential candidates in various optoelectronic applications such as photodetectors and light-emitting diodes due to their high PLQY and longer lifetime.
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Affiliation(s)
- Sruthi S
- Department of Physics, Amrita School of Physical Sciences, Amrita Vishwa Vidyapeetham, Coimbatore, Tamil Nadu, India
| | - Swapnika Suresh
- Department of Physics, Amrita School of Physical Sciences, Amrita Vishwa Vidyapeetham, Coimbatore, Tamil Nadu, India
| | - Mohan Raj Subramaniam
- Department of Physics, Amrita School of Physical Sciences, Amrita Vishwa Vidyapeetham, Coimbatore, Tamil Nadu, India
| | - Sudip K Batabyal
- Department of Physics, Amrita School of Physical Sciences, Amrita Vishwa Vidyapeetham, Coimbatore, Tamil Nadu, India
- Amrita Center for Industrial Research & Innovation (ACIRI), Amrita School of Engineering, Amrita Vishwa Vidyapeetham, Coimbatore, Tamil Nadu, India
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17
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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18
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Li Y, Deng M, Zhang X, Qian L, Xiang C. Proton-Prompted Ligand Exchange to Achieve High-Efficiency CsPbI 3 Quantum Dot Light-Emitting Diodes. NANO-MICRO LETTERS 2024; 16:105. [PMID: 38300363 PMCID: PMC10834927 DOI: 10.1007/s40820-024-01321-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/14/2023] [Accepted: 12/11/2023] [Indexed: 02/02/2024]
Abstract
CsPbI3 perovskite quantum dots (QDs) are ideal materials for the next generation of red light-emitting diodes. However, the low phase stability of CsPbI3 QDs and long-chain insulating capping ligands hinder the improvement of device performance. Traditional in-situ ligand replacement and ligand exchange after synthesis were often difficult to control. Here, we proposed a new ligand exchange strategy using a proton-prompted in-situ exchange of short 5-aminopentanoic acid ligands with long-chain oleic acid and oleylamine ligands to obtain stable small-size CsPbI3 QDs. This exchange strategy maintained the size and morphology of CsPbI3 QDs and improved the optical properties and the conductivity of CsPbI3 QDs films. As a result, high-efficiency red QD-based light-emitting diodes with an emission wavelength of 645 nm demonstrated a record maximum external quantum efficiency of 24.45% and an operational half-life of 10.79 h.
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Affiliation(s)
- Yanming Li
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315300, People's Republic of China
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China
| | - Ming Deng
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315300, People's Republic of China
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo, 315211, Zhejiang, People's Republic of China
| | - Xuanyu Zhang
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315300, People's Republic of China
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China
- University of Nottingham Ningbo China, Ningbo, 315100, People's Republic of China
| | - Lei Qian
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315300, People's Republic of China
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China
| | - Chaoyu Xiang
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315300, People's Republic of China.
- Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
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19
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Guo J, Fu Y, Zheng W, Xie M, Huang Y, Miao Z, Han C, Yin W, Zhang J, Yang X, Tian J, Zhang X. Entropy-Driven Strongly Confined Low-Toxicity Pure-Red Perovskite Quantum Dots for Spectrally Stable Light-Emitting Diodes. NANO LETTERS 2024; 24:417-423. [PMID: 38149580 DOI: 10.1021/acs.nanolett.3c04214] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Spectrally stable pure-red perovskite quantum dots (QDs) with low lead content are essential for high-definition displays but are difficult to synthesize due to QD self-purification. Here, we make use of entropy-driven quantum-confined pure-red perovskite QDs to fabricate light-emitting diodes (LEDs) that have low toxicity and are efficient and spectrum-stable. Based on experimental data and first-principles calculations, multiple element alloying results in a 60% reduction in lead content while improving QD entropy to promote crystal stability. Entropy-driven QDs exhibit photoluminescence with 100% quantum yields and single-exponential decay lifetimes without alteration of their morphology or crystal structure. The pure-red LEDs utilizing entropy-driven QDs have spectrally stable electroluminescence, achieving a brightness of 4932 cd/m2, a maximum external quantum efficiency of over 20%, and a 15-fold longer operational lifetime than the CsPbI3 QD-based LEDs. These achievements demonstrate that entropy-driven QDs can mitigate local compositional heterogeneity and ion migration.
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Affiliation(s)
- Jie Guo
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Yuhao Fu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Weijia Zheng
- Department of Chemistry, University of Victoria, Victoria, BC V8P 5C2, Canada
| | - Mingyuan Xie
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Yuchao Huang
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Zeyu Miao
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Ce Han
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Wenxu Yin
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Jiaqi Zhang
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, P.R. China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130012, P.R. China
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20
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Zhang J, Cai B, Zhou X, Yuan F, Yin C, Wang H, Chen H, Ji X, Liang X, Shen C, Wang Y, Ma Z, Qing J, Shi Z, Hu Z, Hou L, Zeng H, Bai S, Gao F. Ligand-Induced Cation-π Interactions Enable High-Efficiency, Bright, and Spectrally Stable Rec. 2020 Pure-Red Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303938. [PMID: 37464982 DOI: 10.1002/adma.202303938] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Revised: 07/15/2023] [Accepted: 07/17/2023] [Indexed: 07/20/2023]
Abstract
Achieving high-performance perovskite light-emitting diodes (PeLEDs) with pure-red electroluminescence for practical applications remains a critical challenge because of the problematic luminescence property and spectral instability of existing emitters. Herein, high-efficiency Rec. 2020 pure-red PeLEDs, simultaneously exhibiting exceptional brightness and spectral stability, based on CsPb(Br/I)3 perovskite nanocrystals (NCs) capping with aromatic amino acid ligands featuring cation-π interactions, are reported. It is proven that strong cation-π interactions between the PbI6 -octahedra of perovskite units and the electron-rich indole ring of tryptophan (TRP) molecules not only chemically polish the imperfect surface sites, but also markedly increase the binding affinity of the ligand molecules, leading to high photoluminescence quantum yields and greatly enhanced spectral stability of the CsPb(Br/I)3 NCs. Moreover, the incorporation of small-size aromatic TRP ligands ensures superior charge-transport properties of the assembled emissive layers. The resultant devices emitting at around 635 nm demonstrate a champion external quantum efficiency of 22.8%, a max luminance of 12 910 cd m-2 , and outstanding spectral stability, representing one of the best-performing Rec. 2020 pure-red PeLEDs achieved so far.
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Affiliation(s)
- Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
| | - Bo Cai
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, 210094, Nanjing, China
- State Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, China
| | - Xin Zhou
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Physics, Jinan University, Guangzhou, 510632, China
| | - Fanglong Yuan
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
| | - Chunyang Yin
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Heyong Wang
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
| | - Hongting Chen
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Physics, Jinan University, Guangzhou, 510632, China
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, 210094, Nanjing, China
| | - Xinzhen Ji
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Xiangfei Liang
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Physics, Jinan University, Guangzhou, 510632, China
| | - Chao Shen
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Physics, Jinan University, Guangzhou, 510632, China
| | - Yu Wang
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
| | - Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Jian Qing
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Physics, Jinan University, Guangzhou, 510632, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Zhangjun Hu
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
| | - Lintao Hou
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Physics, Jinan University, Guangzhou, 510632, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, 210094, Nanjing, China
| | - Sai Bai
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Feng Gao
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
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21
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Baronnier J, Mahler B, Dujardin C, Houel J. Low-Temperature Emission Dynamics of Methylammonium Lead Bromide Hybrid Perovskite Thin Films at the Sub-Micrometer Scale. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2376. [PMID: 37630961 PMCID: PMC10458237 DOI: 10.3390/nano13162376] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 08/14/2023] [Accepted: 08/17/2023] [Indexed: 08/27/2023]
Abstract
We study the low-temperature (T = 4.7 K) emission dynamics of a thin film of methylammonium lead bromide (MAPbBr3), prepared via the anti-solvent method. Using intensity-dependent (over 5 decades) hyperspectral microscopy under quasi-resonant (532 nm) continuous wave excitation, we revealed spatial inhomogeneities in the thin film emission. This was drastically different at the band-edge (∼550 nm, sharp peaks) than in the emission tail (∼568 nm, continuum of emission). We are able to observe regions of the film at the micrometer scale where emission is dominated by excitons, in between regions of trap emission. Varying the density of absorbed photons by the MAPbBr3 thin films, two-color fluorescence lifetime imaging microscopy unraveled the emission dynamics: a fast, resolution-limited (∼200 ps) monoexponential tangled with a stretched exponential decay. We associate the first to the relaxation of excitons and the latter to trap emission dynamics. The obtained stretching exponents can be interpreted as the result of a two-dimensional electron diffusion process: Förster resonant transfer mechanism. Furthermore, the non-vanishing fast monoexponential component even in the tail of the MAPbBr3 emission indicates the subsistence of localized excitons. Finally, we estimate the density of traps in MAPbBr3 thin films prepared using the anti-solvent method at n∼1017 cm-3.
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Affiliation(s)
- Justine Baronnier
- Université Claude Bernard Lyon 1, Institut Lumière-Matière UMR5306 CNRS, F-69622 Villeurbanne, France
| | - Benoit Mahler
- Université Claude Bernard Lyon 1, Institut Lumière-Matière UMR5306 CNRS, F-69622 Villeurbanne, France
| | - Christophe Dujardin
- Université Claude Bernard Lyon 1, Institut Lumière-Matière UMR5306 CNRS, F-69622 Villeurbanne, France
- Institut Universitaire de France (IUF), F-75005 Paris, France
| | - Julien Houel
- Université Claude Bernard Lyon 1, Institut Lumière-Matière UMR5306 CNRS, F-69622 Villeurbanne, France
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22
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Yang JN, Wang JJ, Yin YC, Yao HB. Mitigating halide ion migration by resurfacing lead halide perovskite nanocrystals for stable light-emitting diodes. Chem Soc Rev 2023; 52:5516-5540. [PMID: 37482807 DOI: 10.1039/d3cs00179b] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/25/2023]
Abstract
Lead halide perovskite nanocrystals are promising for next-generation high-definition displays, especially in light of their tunable bandgaps, high color purities, and high carrier mobility. Within the past few years, the external quantum efficiency of perovskite nanocrystal-based light-emitting diodes has progressed rapidly, reaching the standard for commercial applications. However, the low operational stability of these perovskite nanocrystal-based light-emitting diodes remains a crucial issue for their industrial development. Recent experimental evidence indicates that the migration of ionic species is the primary factor giving rise to the performance degradation of perovskite nanocrystal-based light-emitting diodes, and ion migration is closely related to the defects on the surface of perovskite nanocrystals and at the grain boundaries of their thin films. In this review, we focus on the central idea of surface reconstruction of perovskite nanocrystals, discuss the influence of surface defects on halide ion migration, and summarize recent advances in resurfacing perovskite nanocrystal strategies toward mitigating halide ion migration to improve the stability of the as-fabricated light-emitting diode devices. From the perspective of perovskite nanocrystal resurfacing, we set out a promising research direction for improving both the spectral and operational stability of perovskite nanocrystal-based light-emitting diodes.
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Affiliation(s)
- Jun-Nan Yang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230088, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jing-Jing Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230088, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yi-Chen Yin
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230088, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hong-Bin Yao
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230088, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
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23
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Zhang J, Shen W, Chen S, Zhang Z, Cai B, Qiu Y, Liu Y, Jiang J, He Y, Nan M, Chen Y, Su Z, Dai Y, Liu L, Chen S. Multidentate Ligand-Passivated CsPbI 3 Perovskite Nanocrystals for Stable and Efficient Red-Light-Emitting Diodes. J Phys Chem Lett 2023; 14:6639-6646. [PMID: 37462463 DOI: 10.1021/acs.jpclett.3c01207] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
CsPbI3 nanocrystals (NCs) have become a research hot spot in the field of light-emitting diodes (LEDs). Whereas, the long chain ligands with weak affinity to CsPbI3 NCs have prevented their further development and commercialization. Herein, a novel multidentate short ligand tetramethylthiuram disulfide (TMTD) was employed via a ligand exchange process to enhance hole mobility and decrease trap density of the CsPbI3 NCs film. Therefore, TMTD passivated CsPbI3 NCs LED exhibited 20.65% maximum external quantum efficiency and 3861 cd/m2 maximum luminance. Furthermore, TMTD passivated CsPbI3 NCs LED exhibited good operational stability with a 128 min half-lifetime. This strategy using multidentate short ligand passivation provides an effective way to promote perovskite LED development and commercialization.
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Affiliation(s)
- Jianbin Zhang
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Wei Shen
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Shuo Chen
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Zixuan Zhang
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Bo Cai
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Yue Qiu
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Yi Liu
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Jiayu Jiang
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Yanxing He
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Meng Nan
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Yanfeng Chen
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Zhan Su
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Yujun Dai
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Lihui Liu
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Shufen Chen
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
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24
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Guo J, Lu M, Zhang X, Sun S, Han C, Zhang Y, Yang X, Kershaw SV, Zheng W, Rogach AL. Highly Stable and Efficient Light-Emitting Diodes Based on Orthorhombic γ-CsPbI 3 Nanocrystals. ACS NANO 2023; 17:9290-9301. [PMID: 37126487 DOI: 10.1021/acsnano.3c00789] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Orthorhombic γ-CsPbI3 possesses the highest structural stability among the optically active (light-emissive) CsPbI3 perovskites. Here, we make use of a seed-assisted heteroepitaxial growth to fabricate seed/core/shell CaIx/γ-CsPbI3/CaI2 nanocrystals. Ultrasmall CaIx nanoparticles serve as seeds to template the Pb-centered octahedral arrangement which enables the formation of the γ-CsPbI3 phase and at the same time inhibit lattice strain by blocking the force transfer that otherwise leads to an octahedral twist and so improve the structural stability of the resulting nanocrystals. An outer shell composed from the same material, CaI2, isolates the formed γ-CsPbI3 nanocrystals from the environment, which also significantly improves their stability under ambient conditions. Optical and electrical studies indicate that the seed/core/shell CaIx/γ-CsPbI3/CaI2 structure possesses a shallower set of trap states as compared to cubic α-CsPbI3 nanocrystals. Light-emitting diodes utilizing these γ-CsPbI3 nanocrystals show a record high external quantum efficiency of 25.3%, high brightness of over 13600 cd/m2, and an operational lifetime of ∼14 h before reaching 50% of their initial luminance. These devices can repeatedly be illuminated over 650 times at ∼500 cd/m2 with no decline of brightness, which indicates their great commercial potential.
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Affiliation(s)
- Jie Guo
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Ce Han
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
| | - Stephen V Kershaw
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong SAR 999077, People's Republic of China
| | - Weitao Zheng
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Andrey L Rogach
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong SAR 999077, People's Republic of China
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25
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Yang JN, Ma ZY, Luo JD, Wang JJ, Ye C, Zhou Y, Yin YC, Ru XC, Chen T, Li LY, Feng LZ, Song KH, Ge J, Zhang Q, Yao HB. Pseudohalogen Resurfaced CsPbBr 3 Nanocrystals for Bright, Efficient, and Stable Green-Light-Emitting Diodes. NANO LETTERS 2023; 23:3385-3393. [PMID: 37052258 DOI: 10.1021/acs.nanolett.3c00385] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Lead halide perovskite nanocrystals (LHP NCs) are regarded as promising emitters for next-generation ultrahigh-definition displays due to their high color purity and wide color gamut. Recently, the external quantum efficiency (EQE) of LHP NC based light-emitting diodes (PNC LEDs) has been rapidly improved to a level required by practical applications. However, the poor operational stability of the device, caused by halide ion migration at the grain boundary of LHP NC thin films, remains a great challenge. Herein, we report a resurfacing strategy via pseudohalogen ions to mitigate detrimental halide ion migration, aiming to stabilize PNC LEDs. We employ a thiocyanate solution processed post-treatment method to efficiently resurface CsPbBr3 NCs and demonstrate that the thiocyanate ions can effectively inhibit bromide ion migration in LHP NC thin films. Owing to thiocyanate resurfacing, we fabricated LEDs with a high EQE of 17.3%, a maximum brightness of 48000 cd m-2, and an excellent operation half-life time.
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Affiliation(s)
- Jun-Nan Yang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zhen-Yu Ma
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jin-Da Luo
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jing-Jing Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Chunyin Ye
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yujie Zhou
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yi-Chen Yin
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xue-Chen Ru
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Tian Chen
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Lian-Yue Li
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Li-Zhe Feng
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Kuang-Hui Song
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jing Ge
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Qun Zhang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
| | - Hong-Bin Yao
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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Pramanik A, Sinha SS, Gates K, Nie J, Han FX, Ray PC. Light-Induced Wavelength Dependent Self Assembly Process for Targeted Synthesis of Phase Stable 1D Nanobelts and 2D Nanoplatelets of CsPbI 3 Perovskites. ACS OMEGA 2023; 8:13202-13212. [PMID: 37065067 PMCID: PMC10099116 DOI: 10.1021/acsomega.3c00477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/24/2023] [Accepted: 03/15/2023] [Indexed: 06/19/2023]
Abstract
Despite black cubic phase α-CsPbI3 nanocrystals having an ideal bandgap of 1.73 eV for optoelectronic applications, the phase transition from α-CsPbI3 to non-perovskite yellow δ-CsPbI3 phase at room temperature remains a major obstacle for commercial applications. Since γ-CsPbI3 is thermodynamically stable with a bandgap of 1.75 eV, which has great potential for photovoltaic applications, herein we report a conceptually new method for the targeted design of phase stable and near unity photoluminescence quantum yield (PLQY) two-dimensional (2D) γ-CsPbI3 nanoplatelets (NPLs) and one-dimensional (1D) γ-CsPbI3 nanobelts (NBs) by wavelength dependent light-induced assembly of CsPbI3 cubic nanocrystals. This article demonstrates for the first time that by varying the excitation wavelengths, one can design air stable desired 2D nanoplatelets or 1D nanobelts selectively. Our experimental finding indicates that 532 nm green light-driven self-assembly produces phase stable and highly luminescent γ-CsPbI3 NBs from CsPbI3 nanocrystals. Moreover, we show that a 670 nm red light-driven self-assembly process produces stable and near unity PLQY γ-CsPbI3 NPLs. Systematic time-dependent microscopy and spectroscopy studies on the morphological evolution indicates that the electromagnetic field of light triggered the desorption of surface ligands from the nanocrystal surface and transformation of crystallographic phase from α to γ. Detached ligands played an important role in determining the morphologies of final structures of NBs and NPLs from nanocrystals via oriented attachment along the [110] direction initially and then the [001] direction. In addition, XRD and fluorescence imaging data indicates that both NBs and NPLs exhibit phase stability for more than 60 days in ambient conditions, whereas the cubic phase α-CsPbI3 nanocrystals are not stable for even 3 days. The reported light driven synthesis provides a simple and versatile approach to obtain phase pure CsPbI3 for possible optoelectronic applications.
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Fu J, Liu J, Yuan L, Pan Q, Chen S, Hu Y, Chen J, Ma W, Zhang Q, Liu Z, Cao M. 3D/2D Core/Shell Perovskite Nanocrystals for High-Performance Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207312. [PMID: 36725364 DOI: 10.1002/smll.202207312] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Revised: 01/16/2023] [Indexed: 06/18/2023]
Abstract
All-inorganic lead halide perovskite nanocrystals (NCs) emerge as a rising star in photovoltaic fields on account of their excellent optoelectronic properties. However, it still remains challenging to further promote photovoltaic efficiency due to the susceptible surface and inevitable vacancies. Here, this work reports a 3D/2D core/shell perovskite heterojunction based on CsPbI3 NCs and its performance in solar cells. The guanidinium (GA+ ) rich 2D nanoshells can significantly passivate surface trap states and lower the capping ligand density, resulting in improved photoelectric properties and carrier transport and diminished nonradiative recombination centers via the hydrogen bonds from amino groups in GA+ ions. Consequently, an outstanding power conversion efficiency (PCE) of up to 15.53% is realized, substantially higher than the control device (13.77%). This work highlights the importance of surface chemistry and offers a feasible avenue to achieve high-performance perovskite NCs-based optoelectronic devices.
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Affiliation(s)
- Jie Fu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Jun Liu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Lin Yuan
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Qi Pan
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Shuhua Chen
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Yiqi Hu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Jinxing Chen
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Wanli Ma
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Qiao Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Zeke Liu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Muhan Cao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
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Sun W, Yun R, Liu Y, Zhang X, Yuan M, Zhang L, Li X. Ligands in Lead Halide Perovskite Nanocrystals: From Synthesis to Optoelectronic Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205950. [PMID: 36515335 DOI: 10.1002/smll.202205950] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 11/13/2022] [Indexed: 06/17/2023]
Abstract
Ligands are indispensable for perovskite nanocrystals (NCs) throughout the whole lifetime, as they not only play key roles in the controllable synthesis of NCs with different sizes and shapes, but also act as capping shell that affects optical properties and electrical coupling of NCs. Establishing a systematic understanding of the relationship between ligands and perovskite NCs is significant to enable many potential applications of NCs. This review mainly focuses on the influence of ligands on perovskite NCs. First of all, the ligands-dominated size and shape control of NCs is discussed. Whereafter, the surface defects of NCs and the bonding between ligands and perovskite NCs are classified, and corresponding post-treatment of surface defects via ligands is also summarized. Furthermore, advances in engineering the ligands towards the high performance of optoelectronic devices based on perovskite NCs, including photodetector, solar cell, light emitting diode (LED), and laser, and finally to potential challenges are also discussed.
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Affiliation(s)
- Wenda Sun
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Rui Yun
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Yuling Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Xiaodan Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Mingjian Yuan
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, 300071, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300071, China
| | - Libing Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic, Department of Chemistry, Tianjin University, Tianjin, 300072, China
| | - Xiyan Li
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
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29
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Wang C, Meng W, Li Y, Xu G, Peng M, Nie S, Deng Z. Ultra-small α-CsPbI 3 perovskite quantum dots with stable, bright and pure red emission for Rec. 2020 display backlights. NANOSCALE 2023; 15:1661-1668. [PMID: 36598774 DOI: 10.1039/d2nr05456f] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The synthesis of α-CsPbI3 perovskite quantum dots (QDs) with pure red emission around 630 nm is in high demand for display backlight application. However, the phase transition of α-CsPbI3 to yellow non-emitting δ-CsPbI3 has been proven to be a great challenge for the classic colloidal synthesis route for perovskite QDs in octadecene (ODE). Herein, we report a novel colloidal synthesis route by replacing ODE with lauryl methacrylate (LMA) as the reaction solvent to improve the solubility of precursors, resulting in small sized α-CsPbI3 QDs with a diameter of only 4.2 nm, which are the smallest red PQDs reported so far. The corresponding CsPbI3 QD films exhibit a tunable photoluminescence (PL) emission peak in the bright pure red region of 627 to 638 nm. The CsPbI3 QD polymer composite films with PL emission at 630 nm exhibit a superior photoluminescence quantum yield (PLQY) and photostability to mixed halide CsPbBrI2 films under intense illumination. Perovskite light emitting diodes (LED) with the color gamut reaching 96% of the Rec. 2020 standard are achieved using these films. This study provides a high-performance pure red fluorescent material with a robust, low-cost, and reproducible colloidal chemistry that will pave the way for the adoption of perovskite QDs in display backlight application.
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Affiliation(s)
- Chuying Wang
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China.
| | - Wen Meng
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China.
| | - Yacong Li
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China.
| | - Guangyong Xu
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China.
| | - Min Peng
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China.
| | - Shuming Nie
- Departments of Bioengineering, Chemistry, Electrical and Computer Engineering, and Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Zhengtao Deng
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China.
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30
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Mu Y, He Z, Wang K, Pi X, Zhou S. Recent progress and future prospects on halide perovskite nanocrystals for optoelectronics and beyond. iScience 2022; 25:105371. [PMID: 36345343 PMCID: PMC9636552 DOI: 10.1016/j.isci.2022.105371] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022] Open
Abstract
As an emerging new class of semiconductor nanomaterials, halide perovskite (ABX3, X = Cl, Br, or I) nanocrystals (NCs) are attracting increasing attention owing to their great potential in optoelectronics and beyond. This field has experienced rapid breakthroughs over the past few years. In this comprehensive review, halide perovskite NCs that are either freestanding or embedded in a matrix (e.g., perovskites, metal-organic frameworks, glass) will be discussed. We will summarize recent progress on the synthesis and post-synthesis methods of halide perovskite NCs. Characterizations of halide perovskite NCs by using a variety of techniques will be present. Tremendous efforts to tailor the optical and electronic properties of halide perovskite NCs in terms of manipulating their size, surface, and component will be highlighted. Physical insights gained on the unique optical and charge-carrier transport properties will be provided. Importantly, the growing potential of halide perovskite NCs for advancing optoelectronic applications and beyond including light-emitting devices (LEDs), solar cells, scintillators and X-ray imaging, lasers, thin-film transistors (TFTs), artificial synapses, and light communication will be extensively discussed, along with prospecting their development in the future.
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Affiliation(s)
- Yuncheng Mu
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen, Guangdong 518107, China
| | - Ziyu He
- Department of Material Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK
| | - Kun Wang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Institute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, China
| | - Shu Zhou
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen, Guangdong 518107, China
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31
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Xie M, Guo J, Zhang X, Bi C, Zhang L, Chu Z, Zheng W, You J, Tian J. High-Efficiency Pure-Red Perovskite Quantum-Dot Light-Emitting Diodes. NANO LETTERS 2022; 22:8266-8273. [PMID: 36251485 DOI: 10.1021/acs.nanolett.2c03062] [Citation(s) in RCA: 39] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
It is still challenging to achieve high-efficiency pure-red (620-650 nm wavelength) perovskite light-emitting diodes (PeLEDs). Herein, we report pure-red PeLEDs with Commission Internationale de l'Eclairage coordinates (0.703, 0.297) meeting the Rec. 2020, an external quantum efficiency of 20.8%, and a luminance of 3775 cd/m2. This design is based on the strong quantum confinement CsPbI3 quantum dots (QDs) capped by composite ligands of 3-phenyl-1-propylamine and tetrabutylammonium iodide. This strategy stabilized the structure of the strong-confined QDs and reduced the influence of the electric field-induced Stark effect on the PeLEDs. Furthermore, the exciton binding energy of the QDs was decreased by the composited ligands to suppress Auger recombination within the devices. Additionally, the valence-band maximum of the QDs was lifted to match the hole-transport layer, thus balancing charge injection in the PeLEDs. Our device also demonstrated a stable electroluminescence spectrum and a lifetime of 5.6 times longer than the control device.
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Affiliation(s)
- Mingyuan Xie
- Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China
| | - Jie Guo
- Key Laboratory of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun130012, China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun130012, China
| | - Chenghao Bi
- Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China
| | - Lin Zhang
- Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China
| | - Zema Chu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, P. R. China
| | - Weitao Zheng
- Key Laboratory of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun130012, China
| | - Jingbi You
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, P. R. China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China
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32
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Yao J, Xu L, Wang S, Yang Z, Song J. Recent progress of single-halide perovskite nanocrystals for advanced displays. NANOSCALE 2022; 14:13990-14007. [PMID: 36125019 DOI: 10.1039/d2nr03872b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Light-emitting diodes based on lead halide perovskite nanocrystals (LHP NCs) have shown an astonishing increase in efficiency in just several years of academic research, reaching high external quantum efficiencies exceeding 20%. The extensive color-tunability and narrow emission bandwidth of LHP NCs, in particular, are of great importance in the creation of the next generation of ultra-high-definition displays, as defined by the Rec. 2020 standard recommendation. In fact, whereas the colour of LHP NCs can be easily tuned by the compositions of halogens, the ion migration in mixed-halide perovskites under the electric field will seriously affect the spectral stability and operational lifetimes of perovskite light-emitting diodes (PeLEDs). Therefore, it is essential to realize efficient colour-saturated PeLEDs based on single-halide perovskite NCs. In this review, we focus on the recent progress in LHP NC-based PeLEDs and highlight the strategy of tuning the spectral emission based on quantum confinement or cation alloying/doping in single-halide perovskite NCs. Finally, we will give an outlook on future research avenues for preparing high-efficiency pure green, red and blue PeLEDs based on single-halide perovskite NCs.
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Affiliation(s)
- Jisong Yao
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
| | - Leimeng Xu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
| | - Shalong Wang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
| | - Zhi Yang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
| | - Jizhong Song
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
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33
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Song W, Wang D, Tian J, Qi G, Wu M, Liu S, Wang T, Wang B, Yao Y, Zou Z, Liu B. Encapsulation of Dual-Passivated Perovskite Quantum Dots for Bio-Imaging. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204763. [PMID: 36103618 DOI: 10.1002/smll.202204763] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Indexed: 06/15/2023]
Abstract
Due to their marvelous electrical and optical properties, perovskite nanocrystals have reached remarkable landmarks in solar cells, light-emitting diodes, and photodetectors. However, the intrinsic instability of ionic perovskites, which would undergo an undesirable phase transition and decompose rapidly in ambient humidity, limits their long-term practical deployment. To address this challenge, halogenated trimethoxysilane as the passivation additive is chosen, which utilizes simultaneous halide and silica passivation to enhance the stability of perovskite nanoparticles via a dual-passivation mechanism. The processable nanoparticles show high photoluminescence quantum yield, tunable fluorescence wavelength, and excellent resistance against air and water, highlighting great potential as green to deep-red bio-labels after further phospholipid encapsulation. This work demonstrates that the dual-passivation mechanism could be used to maintain the long-term stability of ionic crystals, which sheds light on the opportunity of halide perovskite nanoparticles for usage in a humid environment.
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Affiliation(s)
- Wentao Song
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Dandan Wang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Jianwu Tian
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Guobin Qi
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Min Wu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Shitai Liu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Tongtong Wang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Bing Wang
- Eco-materials and Renewable Energy Research Center (ERERC), College of Engineering and Applied Sciences, Nanjing University, No. 22 Hankou Road, Nanjing, 210093, China
| | - Yingfang Yao
- Eco-materials and Renewable Energy Research Center (ERERC), College of Engineering and Applied Sciences, Nanjing University, No. 22 Hankou Road, Nanjing, 210093, China
| | - Zhigang Zou
- Eco-materials and Renewable Energy Research Center (ERERC), College of Engineering and Applied Sciences, Nanjing University, No. 22 Hankou Road, Nanjing, 210093, China
| | - Bin Liu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
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34
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Cai Y, Li W, Tian D, Shi S, Chen X, Gao P, Xie R. Organic Sulfonium‐Stabilized High‐Efficiency Cesium or Methylammonium Lead Bromide Perovskite Nanocrystals. Angew Chem Int Ed Engl 2022; 61:e202209880. [DOI: 10.1002/anie.202209880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/06/2022] [Indexed: 11/11/2022]
Affiliation(s)
- Yuting Cai
- College of Materials and Fujian Key Laboratory of Materials Genome Xiamen University Xiamen 361005 China
- College of Chemistry and Chemical Engineering Xiamen University Xiamen 361005 China
| | - Wenbo Li
- Laboratory of Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361005 China
| | - Dongjie Tian
- College of Chemistry and Chemical Engineering Xiamen University Xiamen 361005 China
| | - Shuchen Shi
- College of Materials and Fujian Key Laboratory of Materials Genome Xiamen University Xiamen 361005 China
| | - Xi Chen
- College of Chemistry and Chemical Engineering Xiamen University Xiamen 361005 China
| | - Peng Gao
- Laboratory of Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361005 China
| | - Rong‐Jun Xie
- College of Materials and Fujian Key Laboratory of Materials Genome Xiamen University Xiamen 361005 China
- State Key Laboratory of Physical Chemistry of Solid Surfaces Xiamen 361005 China
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35
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Wang Y, Zhao H, Piotrowski M, Han X, Ge Z, Dong L, Wang C, Pinisetty SK, Balguri PK, Bandela AK, Thumu U. Cesium Lead Iodide Perovskites: Optically Active Crystal Phase Stability to Surface Engineering. MICROMACHINES 2022; 13:mi13081318. [PMID: 36014240 PMCID: PMC9414704 DOI: 10.3390/mi13081318] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Revised: 08/07/2022] [Accepted: 08/10/2022] [Indexed: 05/04/2023]
Abstract
Among perovskites, the research on cesium lead iodides (CsPbI3) has attracted a large research community, owing to their all-inorganic nature and promising solar cell performance. Typically, the CsPbI3 solar cell devices are prepared at various heterojunctions, and working at fluctuating temperatures raises questions on the material stability-related performance of such devices. The fundamental studies reveal that their poor stability is due to a lower side deviation from Goldschmidt's tolerance factor, causing weak chemical interactions within the crystal lattice. In the case of organic-inorganic hybrid perovskites, where their stability is related to the inherent chemical nature of the organic cations, which cannot be manipulated to improve the stability drastically whereas the stability of CsPbI3 is related to surface and lattice engineering. Thus, the challenges posed by CsPbI3 could be overcome by engineering the surface and inside the CsPbI3 crystal lattice. A few solutions have been proposed, including controlled crystal sizes, surface modifications, and lattice engineering. Various research groups have been working on these aspects and had accumulated a rich understanding of these materials. In this review, at first, we survey the fundamental aspects of CsPbI3 polymorphs structure, highlighting the superiority of CsPbI3 over other halide systems, stability, the factors (temperature, polarity, and size influence) leading to their phase transformations, and electronic band structure along with the important property of the defect tolerance nature. Fortunately, the factors stabilizing the most effective phases are achieved through a size reduction and the efficient surface passivation on the delicate CsPbI3 nanocrystal surfaces. In the following section, we have provided the up-to-date surface passivating methods to suppress the non-radiative process for near-unity photoluminescence quantum yield, while maintaining their optically active phases, especially through molecular links (ligands, polymers, zwitterions, polymers) and inorganic halides. We have also provided recent advances to the efficient synthetic protocols for optically active CsPbI3 NC phases to use readily for solar cell applications. The nanocrystal purification techniques are challenging and had a significant effect on the device performances. In part, we summarized the CsPbI3-related solar cell device performances with respect to the device fabrication methods. At the end, we provide a brief outlook on the view of surface and lattice engineering in CsPbI3 NCs for advancing the enhanced stability which is crucial for superior optical and light applications.
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Affiliation(s)
- Yixi Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Hairong Zhao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Marek Piotrowski
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiao Han
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhongsheng Ge
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Lizhuang Dong
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Chengjie Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Sowjanya Krishna Pinisetty
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Praveen Kumar Balguri
- Department of Aeronautical Engineering, Institute of Aeronautical Engineering, Hyderabad 500043, India
| | - Anil Kumar Bandela
- Department of Chemistry, Ben Gurion University of the Negev, Beer Sheva 84105, Israel
- Correspondence: (A.K.B.); (U.T.)
| | - Udayabhaskararao Thumu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
- Correspondence: (A.K.B.); (U.T.)
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36
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Cai Y, Li W, Tian D, Shi S, Chen X, Gao P, Xie RJ. Organic Sulfonium‐Stabilized High‐Efficiency Cesium or Methylammonium Lead Bromide Perovskite Nanocrystals. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202209880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Yuting Cai
- Xiamen University College of Materials and Fujian Key Laboratory of Materials Genome CHINA
| | - Wenbo Li
- Chinese Academy of Sciences Laboratory of Advanced Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute CHINA
| | - Dongjie Tian
- Xiamen University College of Chemistry and Chemical Engineering CHINA
| | - Shuchen Shi
- Xiamen University College of Materials and Fujian Key Laboratory of Materials Genome CHINA
| | - Xi Chen
- Xiamen University College of Chemistry and Chemical Engineering CHINA
| | - Peng Gao
- Chinese Academy of Sciences Laboratory of Advanced Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute CHINA
| | - Rong-Jun Xie
- Xiamen University College of Materials 422 Siming South Road 361005 Xiamen CHINA
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37
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Mir WJ, Alamoudi A, Yin J, Yorov KE, Maity P, Naphade R, Shao B, Wang J, Lintangpradipto MN, Nematulloev S, Emwas AH, Genovese A, Mohammed OF, Bakr OM. Lecithin Capping Ligands Enable Ultrastable Perovskite-Phase CsPbI 3 Quantum Dots for Rec. 2020 Bright-Red Light-Emitting Diodes. J Am Chem Soc 2022; 144:13302-13310. [PMID: 35834433 DOI: 10.1021/jacs.2c04637] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Bright-red light-emitting diodes (LEDs) with a narrow emission line width that emit between 620 and 635 nm are needed to meet the latest industry color standard for wide color gamut displays, Rec. 2020. CsPbI3 perovskite quantum dots (QDs) are one of the few known materials that are ideally suited to meet these criteria. Unfortunately, CsPbI3 perovskite QDs are prone to transform into a non-red-emitting phase and are subject to further degradation mechanisms when their luminescence wavelength is tuned to match that of the Rec. 2020 standard. Here, we show that zwitterionic lecithin ligands can stabilize the perovskite phase of CsPbI3 QDs for long periods in air for at least 6 months compared to a few days for control samples. LEDs fabricated with our ultrastable lecithin-capped CsPbI3 QDs exhibit an external quantum efficiency (EQE) of 7.1% for electroluminescence centered at 634 nm─a record for all-inorganic perovskite nanocrystals in Rec. 2020 red. Our devices achieve a maximum luminance of 1391 cd/m2 at 7.5 V, and their operational half-life is 33 min (T50) at 200 cd/m2─a 10-fold enhancement compared to control samples. Density functional theory results suggest that the surface strain in CsPbI3 QDs capped with the conventional ligands, oleic acid and oleylamine, contributes to the instability of the perovskite structural phase. On the other hand, lecithin binding induces virtually no surface strain and shows a stronger binding tendency for the CsPbI3 surface. Our study highlights the tremendous potential of zwitterionic ligands in stabilizing the perovskite phase and particle size of CsPbI3 QDs for various optoelectronic applications.
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Affiliation(s)
- Wasim J Mir
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Ahmed Alamoudi
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Jun Yin
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia.,Advanced Membranes and Porous Materials Center, Division of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Khursand E Yorov
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Partha Maity
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia.,Advanced Membranes and Porous Materials Center, Division of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Rounak Naphade
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Bingyao Shao
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Jiayi Wang
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Muhammad Naufal Lintangpradipto
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Saidkhodzha Nematulloev
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Abdul-Hamid Emwas
- Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Alessandro Genovese
- Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Omar F Mohammed
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia.,Advanced Membranes and Porous Materials Center, Division of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Osman M Bakr
- KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
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38
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Paul S, Samanta A. Phase-Stable and Highly Luminescent CsPbI 3 Perovskite Nanocrystals with Suppressed Photoluminescence Blinking. J Phys Chem Lett 2022; 13:5742-5750. [PMID: 35713649 DOI: 10.1021/acs.jpclett.2c01463] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Despite their low band gap, the utility of CsPbI3 nanocrystals (NCs) in solar photovoltaic and optoelectronic applications is rather limited because of their phase instability and photoluminescence (PL) intermittency. Herein we show that phase-pure, monodispersed, stable and highly luminescent CsPbI3 NCs can be obtained by tweaking the conventional hot-injection method employing NH4I as an additional precursor. Single-particle studies show a significant suppression of PL blinking. Among all NCs studied, 60% exhibit only high-intensity ON states with a narrow distribution of intensity. The remaining 40% of NCs exhibit a much wider distribution of PL intensity with a significant contribution of low-intensity OFF states. Excellent characteristics of these CsPbI3 NCs are shown to be the result of NH4+ replacing some surface Cs+ of an iodide-rich surface of the NCs. These phase-stable and highly luminescent CsPbI3 NCs with significantly suppressed PL blinking can be useful single-photon emitters and promising materials for optoelectronic and solar photovoltaic applications.
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Affiliation(s)
- Sumanta Paul
- School of Chemistry, University of Hyderabad, Hyderabad 500046, India
| | - Anunay Samanta
- School of Chemistry, University of Hyderabad, Hyderabad 500046, India
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39
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Zhang L, Luo Z, Wei Y, Wang W, Liu Y, Li C, He X, Quan Z. Zero-dimensional hybrid binuclear manganese chloride with thermally stable yellow emission. Chem Commun (Camb) 2022; 58:6926-6929. [PMID: 35638713 DOI: 10.1039/d2cc01522f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Abstract
Photoluminescence (PL) thermal quenching of hybrid metal halides blocks their applications. Herein, a novel type of 0D hybrid metal halide, [Pb(C12H24O6)Cl]2[Mn2Cl6], with broad yellow emission and near-unity PL quantum yield is reported. Importantly, it preserves outstanding thermal stability up to 450 K.
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Affiliation(s)
- Liming Zhang
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology (HIT), Harbin, Heilongjiang, 150001, China.,Department of Chemistry and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.
| | - Zhishan Luo
- Department of Chemistry and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.
| | - Yi Wei
- Department of Chemistry and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.
| | - Wei Wang
- Department of Chemistry and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.
| | - Yulian Liu
- Department of Chemistry and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.
| | - Chen Li
- Department of Chemistry and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.
| | - Xin He
- Department of Chemistry and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.
| | - Zewei Quan
- Department of Chemistry and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.
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40
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Li Q, Shen D, Luo C, Zheng Z, Xia W, Ma W, Li J, Yang Y, Chen S, Chen Y. Ultra-Thermostability of Spatially Confined and Fully Protected Perovskite Nanocrystals by In Situ Crystallization. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107452. [PMID: 35212138 DOI: 10.1002/smll.202107452] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
Although all-inorganic perovskite materials present multiple fascinating optical properties, their poor stability undermines their potential application in the field of multi-color display. Herein, spatially confined CsPbBr3 nanocrystals are in situ crystallized within uniform mesoporous SiO2 nanospheres (MSNs) to regulate their size distribution, passivate their surface defects, shield them from water/oxygen, and more importantly, enhance their thermotolerance. As a result, the remnant PL intensity of the prepared spatially confined perovskite (CsPbBr3 ) nanocrystals by in situ crystallization within uniform mesoporous SiO2 nanospheres (SCP@MSNs) powders can be maintained over 98% of its initial value even after being immersed in harsh conditions (0.1 m HCl or 0.1 m NaOH) for 60 days. Furthermore, the prepared SCP@MSNs-PDMS film demonstrates astonishing thermostability by maintaining almost consistent room temperature PL intensities after continuous heating-cooling cycles between 200 and 25 °C, which would greatly improve its processability during potential industrial manufacturing. The fabricated LCD backlit based on SCP@MSNs covers 124% of NTSC standard and 95.6% of Rec. 2020 standard, indicating its great potential in practical display field.
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Affiliation(s)
- Qinyi Li
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
| | - Dongyang Shen
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
| | - Chengzhao Luo
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
| | - Zhishuai Zheng
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
| | - Wenlin Xia
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
| | - Wenchen Ma
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
| | - Jie Li
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
| | - Yixing Yang
- TCL Corporate Research, 1001 Zhongshan Park Road, Nanshan District, Shenzhen, 518067, China
| | - Song Chen
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, 199 Ren'ai Road, Suzhou Industrial Park, Suzhou, 215123, China
| | - Yu Chen
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
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41
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Fu X, Li W, Zeng X, Yan C, Peng X, Gao Y, Wang Q, Cao J, Yang S, Yang W. Structurally Tolerance-Factor-Tuned Metal Halide Nanocrystals for Environmentally Stable and Efficient Red Light-Emitting Diodes. J Phys Chem Lett 2022; 13:2217-2225. [PMID: 35234477 DOI: 10.1021/acs.jpclett.2c00361] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Black phase CsPbI3, naturally possessing the superiority of high radiative recombination efficiency and narrow emission line width, shows promise for commercial applications of red perovskite light-emitting diodes (PeLEDs). However, the metastable black phase CsPbI3 with a marginal tolerance factor (t) of 0.81 would easily convert to the nonoptical yellow phase. Herein, we demonstrate the strategy of partial substitution of larger dimethylammonium cation (DMA+) for Cs+ to achieve the stable tolerance factor of 0.903 for greatly improved Cs0.7DMA0.3PbI3 nanocrystals. These NCs present a superior ultraviolet (UV) irradiation stability by retaining 80% of the initial photoluminescence intensity after 5 h, which is much better than that of its counterparts (retaining 30%). Based on this, the as-developed red PeLEDs demonstrate remarkable luminance of 1258 cd/m2 and external quantum efficiency of 3.39%, which are almost 6 times and 3 times that of its counterparts, respectively (203 cd/m2 and 1.28%). This strategy may pave the way to improving the stability and efficiency of PeLEDs.
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Affiliation(s)
- Xuehai Fu
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, PR China
| | - Wen Li
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, PR China
| | - Xiankan Zeng
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, PR China
| | - Cheng Yan
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, PR China
| | - Xiaodong Peng
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, PR China
| | - Yue Gao
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, PR China
| | - Qungui Wang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, PR China
| | - Jingjing Cao
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, PR China
| | - Shiyu Yang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, PR China
| | - Weiqing Yang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, PR China
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42
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Hoang MT, Pannu AS, Yang Y, Madani S, Shaw P, Sonar P, Tesfamichael T, Wang H. Surface Treatment of Inorganic CsPbI 3 Nanocrystals with Guanidinium Iodide for Efficient Perovskite Light-Emitting Diodes with High Brightness. NANO-MICRO LETTERS 2022; 14:69. [PMID: 35237871 PMCID: PMC8891416 DOI: 10.1007/s40820-022-00813-9] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Accepted: 01/24/2022] [Indexed: 05/14/2023]
Abstract
The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material. In particular, nanocrystals (NCs) of inorganic perovskites have demonstrated excellent performance for light-emitting and display applications. However, the presence of surface defects on the NCs negatively impacts their performance in devices. Herein, we report a compatible facial post-treatment of CsPbI3 nanocrystals using guanidinium iodide (GuI). It is found that the GuI treatment effectively passivated the halide vacancy defects on the surface of the NCs while offering effective surface protection and exciton confinement thanks to the beneficial contribution of iodide and guanidinium cation. As a consequence, the film of treated CsPbI3 nanocrystals exhibited significantly enhanced luminescence and charge transport properties, leading to high-performance light-emitting diode with maximum external quantum efficiency of 13.8% with high brightness (peak luminance of 7039 cd m-2 and a peak current density of 10.8 cd A-1). The EQE is over threefold higher than performance of untreated device (EQE: 3.8%). The operational half-lifetime of the treated devices also was significantly improved with T50 of 20 min (at current density of 25 mA cm-2), outperforming the untreated devices (T50 ~ 6 min).
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Affiliation(s)
- Minh Tam Hoang
- Faculty of Science, School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD, 4001, Australia
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4001, Australia
| | - Amandeep Singh Pannu
- Faculty of Science, School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD, 4001, Australia
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4001, Australia
| | - Yang Yang
- Faculty of Science, School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD, 4001, Australia
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4001, Australia
| | - Sepideh Madani
- Faculty of Science, School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD, 4001, Australia
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4001, Australia
| | - Paul Shaw
- Centre for Organic Photonics & Electronics (COPE), School of Chemistry and Molecular Biosciences, The University of Queensland, Brisbane, QLD, 4072, Australia
| | - Prashant Sonar
- Faculty of Science, School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD, 4001, Australia
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4001, Australia
| | - Tuquabo Tesfamichael
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4001, Australia
- School of Mechanical, Medical and Process Engineering, Faculty of Engineering, Queensland University of Technology, Brisbane, QLD, 4001, Australia
| | - Hongxia Wang
- Faculty of Science, School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD, 4001, Australia.
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4001, Australia.
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