Vacancy-Induced Semiconductor-Insulator-Metal Transitions in Nonstoichiometric Nickel and Tungsten Oxides

Electric-Field-Induced Metal-Insulator Transition for Low-Power and Ultrafast Nanoelectronics

We present here a comprehensive review of various classes of electric-field-induced reversible Mott metal-insulator materials, which have many applications in ultrafast switches, reconfigurable high-frequency devices up to THz, and photonics. Various types of Mott transistors are analyzed, and their applications are discussed. This paper introduces new materials that demonstrate the Mott transition at very low DC voltage levels, induced by an external electric field. The final section of the paper examines ferroelectric Mott transistors and these innovative ferroelectric Mott materials.

Highly Mixed Index Facet Engineering Induces Defect Formation and Converts the Wave-Transmissive Mott Insulator NiO into Electromagnetic Wave Absorbent

Mott insulator possesses the property of converting into semiconductor under supernormal conditions and achieving the Mott insulator-semiconductor transition (IST) holds great scientific value. Nevertheless, current IST methodologies possess certain limitations because they are not capable of being implemented under conventional conditions, thereby limiting their practical applications. Herein, a highly mixed index facets (HMIF) strategy is proposed to construct homogeneous interfaces with gradient work function (WF) in Mott insulator NiO, accompanied by numerous oxygen vacancies. These vacancies provide additional defect energy levels and inhomogeneous charge distributions, resulting in a 180 fold enhancement of conductivity, realizing the IST process, and inducing the defect polarization. In addition, HMIF configuration induces electron transport along the index facets with gradient WF, ultimately leading to accumulation on the specific facet. This accumulation allows this facet can be considered as a dipole with its adjacent facets and makes NiO to attenuate electromagnetic waves (EMW) through dipole polarization. Therefore, NiO with exposed HMIF possesses improved EMW absorption properties (80-fold higher than that of commercial NiO), realizing the transition from EMW-transmissive to EMW-absorbing materials. This research presents an approach for the IST process, discovers the polarization behavior that occurred on specific index facet, and extends its potential application in EMW absorption.

Nanoelectronics Using Metal-Insulator Transition

Metal-insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive change in Mott insulators has attracted tremendous interest for investigation into next-generation electronic and optoelectronic devices, as well as a fundamental understanding of condensed matter systems. Although the mechanism of MIT in Mott insulators is still controversial, great efforts have been made to understand and modulate MIT behavior for various electronic and optoelectronic applications. In this review, recent progress in the field of nanoelectronics utilizing MIT is highlighted. A brief introduction to the physics of MIT and its underlying mechanisms is begun. After discussing the MIT behaviors of various Mott insulators, recent advances in the design and fabrication of nanoelectronics devices based on MIT, including memories, gas sensors, photodetectors, logic circuits, and artificial neural networks are described. Finally, an outlook on the development and future applications of nanoelectronics utilizing MIT is provided. This review can serve as an overview and a comprehensive understanding of the design of MIT-based nanoelectronics for future electronic and optoelectronic devices.

Neuromorphic learning with Mott insulator NiO

Habituation and sensitization (nonassociative learning) are among the most fundamental forms of learning and memory behavior present in organisms that enable adaptation and learning in dynamic environments. Emulating such features of intelligence found in nature in the solid state can serve as inspiration for algorithmic simulations in artificial neural networks and potential use in neuromorphic computing. Here, we demonstrate nonassociative learning with a prototypical Mott insulator, nickel oxide (NiO), under a variety of external stimuli at and above room temperature. Similar to biological species such as Aplysia, habituation and sensitization of NiO possess time-dependent plasticity relying on both strength and time interval between stimuli. A combination of experimental approaches and first-principles calculations reveals that such learning behavior of NiO results from dynamic modulation of its defect and electronic structure. An artificial neural network model inspired by such nonassociative learning is simulated to show advantages for an unsupervised clustering task in accuracy and reducing catastrophic interference, which could help mitigate the stability-plasticity dilemma. Mott insulators can therefore serve as building blocks to examine learning behavior noted in biology and inspire new learning algorithms for artificial intelligence.

Influence of the Defect Stability on n-Type Conductivity in Electron-Doped α- and β-Co(OH)2 Nanosheets

Electronic doping of transition-metal oxides (TMOs) is typically accomplished through the synthesis of nonstoichiometric oxide compositions and the subsequent ionization of intrinsic lattice defects. As a result, ambipolar doping of wide-band-gap TMOs is difficult to achieve because the formation energies and stabilities of vacancy and interstitial defects vary widely as a function of the oxide composition and crystal structure. The facile formation of lattice defects for one carrier type is frequently paired with the high-energy and unstable generation of defects required for the opposite carrier polarity. Previous work from our group showed that the brucite (β-phase) layered metal hydroxides of Co and Ni, intrinsically p-type materials in their anhydrous three-dimensional forms, could be n-doped using a strong chemical reductant. In this work, we extend the electron-doping study to the α polymorph of Co(OH)₂ and elucidate the defects responsible for n-type doping in these two-dimensional materials. Through structural and electronic comparisons between the α, β, and rock-salt structures within the cobalt (hydr)oxide family of materials, we show that both layered structures exhibit facile formation of anion vacancies, the necessary defect for n-type doping, that are not accessible in the cubic CoO structure. However, the brucite polymorph is much more stable to reductive decomposition in the presence of doped electrons because of its tighter layer-to-layer stacking and octahedral coordination geometry, which results in a maximum conductivity of 10^-4 S/cm, 2 orders of magnitude higher than the maximum value attainable on the α-Co(OH)₂ structure.

Synthesis of oxygen vacancy-enriched N/P co-doped CoFe2O4 for high-efficient degradation of organic pollutant: Mechanistic insight into radical and nonradical evolution

Oxygen vacancy-enriched N/P co-doped cobalt ferrite (NPCFO) was synthesized using ionic liquid as N and P sources, and then the catalytic performance and mechanism of NPCFO upon peroxymonosulfate (PMS) activation for the degradation of organic pollutants were investigated. The as-synthesized NPCFO-700 exhibited excellent catalytic performance in activating PMS, and the degradation rate constant of 4-chlorophenol (4-CP) increased with the increase of OV concentration in NPCFO-x. EPR analysis confirmed the existence of ·OH, SO₄^·-, and ¹O₂ in the NPCFO-700/PMS system, in which OV could induce the generation of ¹O₂ by PMS adsorption and successive capture, and also served as electronic transfer medium to accelerate the redox cycle of M²⁺/M³⁺ (M denotes Co or Fe) for the generation of radical to synergistically degrade organic pollutants. In addition, the contribution of free radical and nonradical to 4-CP degradation was observed to be strongly dependent on solution pH, and SO₄^·- was the major ROS in 4-CP degradation under acid and alkaline condition, while ¹O₂ was involved in the degradation of 4-CP under neutral condition due its selective oxidation capacity, as evidenced by the fact that such organic pollutants with ionization potential (IP) below 9.0 eV were more easily attacked by ¹O₂. The present study provided a novel insight into the development of transition metal-based heterogeneous catalyst containing massive OV for high-efficient PMS activation and degradation of organic pollutants.

Reversible Electron Doping of Layered Metal Hydroxide Nanoplates (M = Co, Ni) Using n-Butyllithium

Ambipolar doping of metal oxides is critical toward broadening the functionality of semiconducting oxides in electronic devices. Most metal oxides, however, show a strong preference for a single doping polarity due to the intrinsic stability of particular defects in an oxide lattice. In this work, we demonstrate that layered metal hydroxide nanomaterials of Co and Ni, which are intrinsically p-doped in their anhydrous rock salt form, can be n-doped using n-BuLi as a strong electron donor. A combination of X-ray characterization techniques reveal that hydroxide vacancy formation, Li⁺ adsorption, and varying degrees of electron delocalization are responsible for the stability of injected electrons. The doped electrons induce conductivity increases of 4-6 orders of magnitude relative to the undoped M(OH)₂. We anticipate that chemical electron doping of layered metal hydroxides may be a general strategy to increase carrier concentration and stability for n-doping of intrinsically p-type metal oxides.

Composition-Gradient-Mediated Semiconductor-Metal Transition in Ternary Transition-Metal-Dichalcogenide Bilayers

The semiconductor-metal transition (SMT) enables multiple applications of one single material, especially in modern devices. How to control it remains one of the most intriguing questions in material physics/chemistry, especially in two-dimensional layered materials. In this work, we report realization of SMT in MoS_2-xO_x bilayers, driven by the concentration gradient of the chalcogen atom across the van der Waals (vdW) gap of the disordered bilayers. Using the cluster expansion method, we determined that either semiconducting (stable) or metallic states (metastable) can be realized in MoS_2-xO_x bilayers with the same composition. Machine learning analysis revealed that the concentration gradient of the chalcogen atom across the vdW gap is the leading fingerprint of SMT, with structural distortion induced by atom mixing being a significant secondary factor. The electronic origin of the SMT is the broadening of the Mo d_z² and O p_z bands, accompanied by the redistribution of the d electrons. This in-vdW-gap composition-gradient-driven SMT phenomenon also applies to MoSe_2-xO_x and MoTe_2-xO_x bilayers. The present work provides an alternative mechanism of SMT and demonstrates that the composition gradient across the vdW gap in the bilayer materials can be another degree of freedom to tune the band gaps without introducing extrinsic elements. Our findings will benefit the material design for small-scale and energy-efficient electronic devices.

Probing Active Sites and Reaction Intermediates of Electrocatalysis Through Confocal Near-Infrared Photoluminescence Spectroscopy: A Perspective

Electrocatalytic reactions such as oxygen evolution (OER) and oxygen reduction reactions (ORR) are one of the most complex heterogeneous charge transfer processes because of the involvement of multiple proton-coupled-electron transfer steps over a narrow potential range and the formation/breaking of oxygen-oxygen bonds. Obtaining a clear mechanistic picture of these reactions on some highly active strongly-correlated oxides such as MnO_x, NiO_x, and IrO_x has been challenging due to the inherent limitations of the common spectroscopic tools used for probing the reactive intermediates and active sites. This perspective article briefly summarizes some of the key challenges encountered in such probes and describes some of unique advantages of confocal near-infrared photoluminescence (NIR-PL) technique for probing surface and bulk metal cation states under in-situ and ex-situ electrochemical polarization studies. Use of this technique opens up a new avenue for studying changes in the electronic structure of metal oxides occurring as a result of perturbation of defect equilibria, which is crucial in a broad range of heterogeneous systems such as catalysis, photocatalysis, mineral redox chemistry, and batteries.

Plasmochromic Nanocavity Dynamic Light Color Switching

Static plasmonic metal-insulator-nanohole (MIN) cavities have been shown to create high chromaticity spectral colors for display applications. While on-off switching of said devices has been demonstrated, introducing active control over the spectral color of a single cavity is an ongoing challenge. Electrochromic oxides such as tungsten oxide (WO₃) offer the possibility to tune their refractive index (2.1-1.8) and extinction (0-0.5) upon ion insertion, allowing active control over resonance conditions for MIN based devices. In combination with the dynamic change in the WO₃ layer, the utilization of a plasmonic superstructure allows creation of well-defined spectral reflection of the nanocavity. Here, we employ inorganic, electrochromic WO₃ as the tunable dielectric in a MIN nanocavity, resulting in a theoretically achievable resonance wavelength modulation from 601 to 505 nm, while maintaining 35% of reflectance intensity. Experimental values for the spectral modulation result in a 64 nm shift of peak wavelength with high reproducibility and fast switching speed. Remarkably, the introduced device shows electrochemical stability over 100 switching cycles while most of the intercalated charge can be regained (91.1%), leading to low power consumption (5.6 mW/cm^-2).

Modulation of oxygen vacancy in tungsten oxide nanosheets for Vis-NIR light-enhanced electrocatalytic hydrogen production and anticancer photothermal therapy

Oxygen vacancy (OV) tuning was introduced into oxygen-deficient WO3 nanosheets to optimize the chemical and electronic properties. Enhanced electronic conduction, extended light absorption, enhanced HER reaction kinetics and benign photothermal performance were verified by density functional theory (DFT) calculations and experimental studies. Vis-NIR light-enhanced electrocatalytic HER was accomplished with a small overpotential of 52 mV (at 10 mA cm-2) and a low Tafel slope of 37 mV dec-1 and performed much more efficiently than that in darkness, comparable to the noble-metal catalysts (Pt, Pt/C). Moreover, the resultant WO3-OVs possess good photothermal conversion efficiency. The promising potential of the WO3-OVs for anticancer photothermal therapy has been demonstrated with a high photothermal conversion efficiency (∼41.6%) upon single wavelength near-infrared irradiation and an efficient tumor inhibition rate (∼96.8%). This design of photoelectronic/thermal materials paves an exciting new avenue for the conversion of well-developed metal oxides to be high-performance and multifunctional materials for energy and oncology applications.

Electrical Tuning of the SERS Enhancement by Precise Defect Density Control

Surface-enhanced Raman scattering (SERS) has been widely established as a powerful analytical technique in molecular fingerprint recognition. Although conventional noble metal-based SERS substrates show admirable enhancement of the Raman signals, challenges on reproducibility, biocompatibility, and costs limit their implementations as the preferred analysis platforms. Recently, researches on SERS substrates have found that some innovatively prepared metal oxides/chalcogenides could produce noble metal comparable SERS enhancement, which profoundly expanded the material selection. Nevertheless, to tune the SERS enhancement of these materials, careful experimental designs and sophisticated processes were needed. Here, an electrically tunable SERS substrate based on tungsten oxides (WO_3-x) is demonstrated. An electric field is used to introduce the defects in the oxide on an individual substrate, readily invoking the SERS detection capability, and further tuning the enhancement factor is achieved through electrical programming of the oxide leakage level. Additionally, by virtue of in situ tuning the defect density and enhancement factor, the substrate can adapt to different molecular concentrations, potentially improving the detection range. These results not only help build a better understanding of the chemical mechanism but also open an avenue for engaging non-noble metal materials as multifunctional SERS substrates.

Photocapacitive CdS/WOx nanostructures for solar energy storage

Through a facile solvothermal procedure, a CdS/WO_x nanocomposite has been synthesised which exhibits photocapacitive behaviour under white light illumination at a radiant flux density of 99.3 mW cm⁻². Photoelectrochemical experiments were undertaken to examine the self-charging properties of the material and to develop an understanding of the underlying electronic band structure responsible for the phenomenon. By employing XPS, UPS and UV-Vis diffuse reflectance spectroscopy for further characterisation, the ability of the composite to generate current following the removal of incident light was related to the trapping of photoexcited electrons by the WO_x component. The presence of WO_x yielded an order of magnitude increase in the transient photocurrent response relative to CdS alone, an effect attributed to the suppression of electron-hole recombination in CdS due to hole transfer across the CdS/WO_x interface. Moreover, current discharge from the material persisted for more than twenty minutes after final illumination, an order of magnitude improvement over many existing binary composites. As a seminal investigation into the photocapacitive characteristics of CdS/WO_x composites, the work offers insight into how the constituent materials might be utilised as part of a future self-charging solar device.

Facile synthesis of novel antimony selenide nanocrystals with hierarchical architecture by physical vapor deposition technique

Stoichiometric antimony selenide (Sb2Se3) nanocrystals have been successfully engineered by a facile physical vapor deposition method, employing a single precursor of polycrystalline Sb2Se3 charge in a closed quartz ampoule under high vacuum without any foreign seed or extraneous chemical elements. This work underscores the efficacy of the vapor deposition process and provides synthetic strategies to scale down bulk Sb2Se3 into novel nanostructures. The morphological evolution of the tailored architecture was examined on micro and nano size scales by scanning electron microscopy and high-resolution transmission electron microscopy. The intrinsic mechanism governing the nanostructure formation is revealed as layer-by-layer growth, related to the unique layered structure of Sb2Se3. The optical properties of the grown crystals were probed by UV–vis–NIR and photoluminescence tools. The band-gap values of the microfibers, nanorods, nanooctahedra and nanospheres estimated from UV–vis–NIR analysis are found to be 1.25, 1.47, 1.51 and 1.75 eV, respectively. Powder X-ray diffraction, energy-dispersive analysis by X-rays, X-ray photoelectron spectroscopy, Raman spectroscopy and photoluminescence studies confirmed the quality, phase purity and homogeneity of the as-grown nanostructures. The adopted physical vapor deposition method is thus shown to be a simple and elegant route which resulted in the enhancement of the band gap for the Sb2Se3 samples compared with their counterparts grown by chemical methods. This approach has great potential for further applications in optoelectronics.

The formation and detection techniques of oxygen vacancies in titanium oxide-based nanostructures

TiO2 and other titanium oxide-based nanomaterials have drawn immense attention from researchers in different scientific domains due to their fascinating multifunctional properties, relative abundance, environmental friendliness, and bio-compatibility. However, the physical and chemical properties of titanium oxide-based nanomaterials are found to be explicitly dependent on the presence of various crystal defects. Oxygen vacancies are the most common among them and have always been the subject of both theoretical and experimental research as they play a crucial role in tuning the inherent properties of titanium oxides. This review highlights different strategies for effectively introducing oxygen vacancies in titanium oxide-based nanomaterials, as well as a discussion on the positions of oxygen vacancies inside the TiO2 band gap based on theoretical calculations. Additionally, a detailed review of different experimental techniques that are extensively used for identifying oxygen vacancies in TiO2 nanostructures is also presented.

Electrochromic semiconductors as colorimetric SERS substrates with high reproducibility and renewability

Electrochromic technology has been actively researched for displays, adjustable mirrors, smart windows, and other cutting-edge applications. However, it has never been proposed to overcome the critical problems in the field of surface-enhanced Raman scattering (SERS). Herein, we demonstrate a generic electrochromic strategy for ensuring the reproducibility and renewability of SERS substrates, which are both scientifically and technically important due to the great need for quantitative analysis, standardized production and low cost in SERS. This color-changing strategy is based on a unique quantitative relationship between the SERS signal amplification and the coloration degree within a certain range, in which the SERS activity of the substrate can be effectively inferred by judging the degree of color change. Our results may provide a first step toward the rational design of electrochromic SERS substrates with a high sensitivity, reproducibility, and renewability.

Electrochromic technology has diverse cutting-edge applications, but it has never been used to overcome the critical problems in the field of surface-enhanced Raman scattering (SERS). Here, the authors demonstrate a generic electrochromic strategy for ensuring the reproducibility and renewability of SERS substrates.

Highly active and durable Pd nanocatalyst promoted by an oxygen-deficient terbium oxide (Tb4O7−x) support for hydrogenation and cross-coupling reactions

Oxygen-deficient Tb₄O_7−x as an effective promoter and support for Pd nanocatalysts holds great potential in hydrogenation and cross-coupling reactions.

Oxygen vacancy rich Cu2O based composite material with nitrogen doped carbon as matrix for photocatalytic H2 production and organic pollutant removal

A nitrogen doped carbon matrix supported Cu₂O composite material (Cu/Cu2O@NC) was fabricated successfully with a coordination polymer as precursor through calcination. In this composite material, Cu₂O particles with a size of about 6-10 nm were dispersed evenly in the nitrogen doped carbon matrix. After calcination, some coordinated nitrogen atoms were doped in the lattice of Cu₂O and replace oxygen atoms, thus generating a large number of oxygen vacancies. In Cu/Cu2O@NC, the existence of oxygen vacancies has been confirmed by electron spin resonance (ESR) and X-ray photoelectron spectroscopy (XPS). Under visible light irradiation, Cu/Cu2O@NC exhibits excellent H₂ production with the rate of 379.6 μmol h^-1 g^-1. Its photocatalytic activity affects organic dyes, such as Rhodamine B (RhB) and methyl orange (MO). In addition to photocatalysis, Cu/Cu2O@NC also exhibits striking catalytic activity in reductive conversion of 4-nitrophenol to 4-aminophenol with in presence of sodium borohydride (NaBH₄). The conversion efficiency reaches almost 100% in 250 s with the quantity of Cu/Cu2O@NC as low as 5 mg. The outstanding H₂ production and organic pollutants removal are attributed to the oxygen vacancy. We expect that Cu/Cu2O@NC will find its way as a new resource for hydrogen energy as well as a promising material in water purification.

Active Manipulation of NIR Plasmonics: the Case of Cu2-xSe through Electrochemistry

Active control of nanocrystal optical and electrical properties is crucial for many of their applications. By electrochemical (de)lithiation of Cu_2-xSe, a highly doped semiconductor, dynamic and reversible manipulation of its NIR plasmonics has been achieved. Spectroelectrochemistry results show that NIR plasmon red-shifted and reduced in intensity during lithiation, which can be reversed with perfect on-off switching over 100 cycles. Electrochemical impedance spectroscopy reveals that a Faradaic redox process during Cu_2-xSe (de)lithiation is responsible for the optical modulation, rather than simple capacitive charging. XPS analysis identifies a reversible change in the redox state of selenide anion but not copper cation, consistent with DFT calculations. Our findings open up new possibilities for dynamical manipulation of vacancy-induced surface plasmon resonances and have important implications for their use in NIR optical switching and functional circuits.

Giant positive magnetoresistance in half-metallic double-perovskite Sr2CrWO6 thin films

Magnetoresistance (MR) is the magnetic field-induced change of electrical resistance. The MR effect not only has wide applications in hard drivers and sensors but also is a long-standing scientific issue for complex interactions. Ferromagnetic/ferrimagnetic oxides generally show negative MR due to the magnetic field-induced spin order. We report the unusually giant positive MR up to 17,200% (at 2 K and 7 T) in 12-nm Sr₂CrWO₆ thin films, which show metallic behavior with high carrier density of up to 2.26 × 10²⁸ m^-3 and high mobility of 5.66 × 10⁴ cm² V^-1 s^-1. The possible mechanism is that the external magnetic field suppresses the long-range antiferromagnetic order to form short-range antiferromagnetic fluctuations, which enhance electronic scattering and lead to the giant positive MR. The high mobility may also have contributions to the positive MR. These results not only experimentally confirm that the giant positive MR can be realized in oxides but also open up new opportunities for developing and understanding the giant positive MR in oxides.

Electric-field control of tri-state phase transformation with a selective dual-ion switch

Materials can be transformed from one crystalline phase to another by using an electric field to control ion transfer, in a process that can be harnessed in applications such as batteries, smart windows and fuel cells. Increasing the number of transferrable ion species and of accessible crystalline phases could in principle greatly enrich material functionality. However, studies have so far focused mainly on the evolution and control of single ionic species (for example, oxygen, hydrogen or lithium ions). Here we describe the reversible and non-volatile electric-field control of dual-ion (oxygen and hydrogen) phase transformations, with associated electrochromic and magnetoelectric effects. We show that controlling the insertion and extraction of oxygen and hydrogen ions independently of each other can direct reversible phase transformations among three different material phases: the perovskite SrCoO_3-δ (ref. 12), the brownmillerite SrCoO_2.5 (ref. 13), and a hitherto-unexplored phase, HSrCoO_2.5. By analysing the distinct optical absorption properties of these phases, we demonstrate selective manipulation of spectral transparency in the visible-light and infrared regions, revealing a dual-band electrochromic effect that could see application in smart windows. Moreover, the starkly different magnetic and electric properties of the three phases-HSrCoO_2.5 is a weakly ferromagnetic insulator, SrCoO_3-δ is a ferromagnetic metal, and SrCoO_2.5 is an antiferromagnetic insulator-enable an unusual form of magnetoelectric coupling, allowing electric-field control of three different magnetic ground states. These findings open up opportunities for the electric-field control of multistate phase transformations with rich functionalities.

Multiphase TiO2nanostructures: a review of efficient synthesis, growth mechanism, probing capabilities, and applications in bio-safety and health

This review article provides an exhaustive overview of efficient synthesis, growth mechanism and research activities of multiphase TiO₂nanostructures to provide their structural, morphological, optical and biological properties co-relations.

Electrochemical Charging of CdSe Quantum Dots: Effects of Adsorption versus Intercalation

Effects of electrochemical charging of quantum dots (QDs) have been reported previously, wherein optical and electrical properties could be modulated through cation adsorption and electron injection into the quantum-confined 1S_e states. In this work, we report two different modes of electrochemical double-layer charging in CdSe QDs and their effects on the electronic and optical properties. We show that the charging mechanism at the interface involves cation intercalation for smaller ions, such as Li⁺, Na⁺, or K⁺, and cation adsorption for larger bulky ions, such as tetrabutylammonium ions, where steric hindrance precludes intercalation. As a result, while cation adsorption leads to an increase in the absorbance in the mid-infrared spectral range, cation intercalation into the CdSe core results in an absorbance increase from the visible to infrared spectral range, an enhancement in radiative lifetime of e^-, an increase of 158% in the intensity of band-edge photoluminescence, and strong emission in the near-infrared spectral range as a result of the formation of Se vacancies. The nature of charging mechanisms is discussed using the results of combined photoluminescence, radiative lifetime, and X-ray photoemission studies. The cation-coupled electronic and optical modulation reported here in CdSe QDs have important implications for electrochromic smart windows, photovoltaics, and other devices.