1
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Giza M, Świniarski M, Gertych AP, Czerniak-Łosiewicz K, Rogala M, Kowalczyk PJ, Zdrojek M. Contact Resistance Engineering in WS 2-Based FET with MoS 2 Under-Contact Interlayer: A Statistical Approach. ACS APPLIED MATERIALS & INTERFACES 2024; 16:48556-48564. [PMID: 39186441 PMCID: PMC11403553 DOI: 10.1021/acsami.4c09688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable Fermi level pinning effect (FLP), which prevents control over the Schottky barrier height at the metal/2D material junction. We propose to harness the FLP effect to lower contact resistance in field-effect transistors (FETs) by using an additional 2D interlayer at the conducting channel and metallic contact interface (under-contact interlayer). To do so, we developed a new approach using the gold-assisted transfer method, which enables the fabrication of heterostructures consisting of TMDs monolayers with complex shapes, prepatterned using e-beam lithography, with lateral dimensions even down to 100 nm. We designed and demonstrated tungsten disulfide (WS2) monolayer-based devices in which the molybdenum disulfide (MoS2) monolayer is placed only in the contact area of the FET, creating an Au/MoS2/WS2 junction, which effectively reduces contact resistance by over 60% and improves the Ion/Ioff ratio 10 times in comparison to WS2-based devices without MoS2 under-contact interlayer. The enhancement in the device operation arises from the FLP effect occurring only at the interface between the metal and the first layer of the MoS2/WS2 heterostructure. This results in favorable band alignment, which enhances the current flow through the junction. To ensure the reproducibility of our devices, we systematically analyzed 160 FET devices fabricated with under-contact interlayer and without it. Statistical analysis shows a consistent improvement in the operation of the device and reveals the impact of contact resistance on key FET performance indicators.
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Affiliation(s)
- Małgorzata Giza
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Michał Świniarski
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Arkadiusz P Gertych
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | | | - Maciej Rogala
- Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
| | - Paweł J Kowalczyk
- Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
| | - Mariusz Zdrojek
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
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2
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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024; 124:10112-10191. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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3
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Kim M, Lee Y, Kim K, Pham GH, Kim K, Jun JH, Lee HW, Yoon S, Hwang HJ, Sung MM, Lee BH. Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors. NANOSCALE HORIZONS 2024. [PMID: 39212659 DOI: 10.1039/d4nh00339j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
Recently, tellurium (Te) has been proposed as a promising p-type material; however, even the state-of-the-art results couldn't overcome the critical roadblocks for its practical applications, such as large I-V hysteresis and high off-state leakage current. We developed a novel Te atomic layer deposition (ALD) process combined with a TeOx seed layer and Al2O3 passivation to detour the limitations of p-type Te semiconducting materials. Also, we have identified the origins of high hysteresis and off current using the 77 K operation study and passivation process optimization. As a result, a p-type Te field-effect transistor exhibits less than 23 mV hysteresis and a high field-effect mobility of 33 cm2 V-1 s-1 after proper channel thickness modulation and passivation. Also, an ultralow off-current of approximately 1 × 10-14 A, high on/off ratios in the order of 108, and a steep slope subthreshold swing of 79 mV dec-1 could be achieved at 77 K. These enhancements strongly indicate that the previously reported high off-state current was originated from interfacial defects formed at the metal-Te contact interface. Although further studies concerning this interface are still necessary, the findings herein demonstrate that the major obstacles hindering the use of Te for ultrathin p-channel device applications can be eliminated by proper process optimization.
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Affiliation(s)
- Minjae Kim
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea.
| | - Yongsu Lee
- Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup-si, Jeolabuk-do, 56212, Republic of Korea
| | - Kyuheon Kim
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea.
| | - Giang-Hoang Pham
- Department of Chemistry, Hanyang University, Wangsimni-ro 222, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Kiyung Kim
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea.
| | - Jae Hyeon Jun
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea.
| | - Hae-Won Lee
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea.
| | - Seongbeen Yoon
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea.
| | - Hyeon Jun Hwang
- Department of Semiconductor Engineering, Mokpo National University, 1666, Yeongsan-ro, Cheonggye-myeon, Muan-gun, Jeollanam-do 58554, Republic of Korea
| | - Myung Mo Sung
- Department of Chemistry, Hanyang University, Wangsimni-ro 222, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Byoung Hun Lee
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea.
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Guo P, Zhou Y, Yang H, Pan J, Yin J, Zhao B, Liu S, Peng J, Jia X, Jia M, Yang Y, Ren T. Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1375. [PMID: 39269037 PMCID: PMC11396917 DOI: 10.3390/nano14171375] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2024] [Revised: 08/20/2024] [Accepted: 08/22/2024] [Indexed: 09/15/2024]
Abstract
The scaling of bulk Si-based transistors has reached its limits, while novel architectures such as FinFETs and GAAFETs face challenges in sub-10 nm nodes due to complex fabrication processes and severe drain-induced barrier lowering (DIBL) effects. An effective strategy to avoid short-channel effects (SCEs) is the integration of low-dimensional materials into novel device architectures, leveraging the coupling between multiple gates to achieve efficient electrostatic control of the channel. We employed TCAD simulations to model multi-gate FETs based on various dimensional systems and comprehensively investigated electric fields, potentials, current densities, and electron densities within the devices. Through continuous parameter scaling and extracting the sub-threshold swing (SS) and DIBL from the electrical outputs, we offered optimal MoS2 layer numbers and single-walled carbon nanotube (SWCNT) diameters, as well as designed structures for multi-gate FETs based on monolayer MoS2, identifying dual-gate transistors as suitable for high-speed switching applications. Comparing the switching performance of two device types at the same node revealed CNT's advantages as a channel material in mitigating SCEs at sub-3 nm nodes. We validated the performance enhancement of 2D materials in the novel device architecture and reduced the complexity of the related experimental processes. Consequently, our research provides crucial insights for designing next-generation high-performance transistors based on low-dimensional materials at the scaling limit.
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Affiliation(s)
- Pengwen Guo
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yuxue Zhou
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Haolin Yang
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Jiong Pan
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Jiaju Yin
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Bingchen Zhao
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Shangjian Liu
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Jiali Peng
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Xinyuan Jia
- Xingjian College, Tsinghua University, Beijing 100084, China
| | - Mengmeng Jia
- Beijing Key Laboratory of Micro-Nano Energy and Sensor, Center for High-Entropy Energy and Systems, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yi Yang
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Tianling Ren
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
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5
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Tan X, Qu H, Yang J, Zhang S, Fu HH. A next-generation transistor with low supply voltage operation constructed based on 2D materials' metal-semiconductor phase transition. MATERIALS HORIZONS 2024. [PMID: 39143942 DOI: 10.1039/d4mh00662c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2024]
Abstract
Power dissipation, a fundamental limitation for realizing high-performance electronic devices, may be effectively reduced by an external supply voltage. However, a small supply voltage simultaneously brings another serious challenge, that is, a remarkable device inability in transistors. To deal with this issue, we propose a new transistor design based on the metal-semiconductor phase transition in a AsGeC3 monolayer, which provides a switching mechanism of band-to-band tunneling at on- and off-states by gate-voltage modulation. Our first-principles calculations uncover that the monolayer AsGeC3 field-effect transistors (FETs) with gate lengths of 5, 4, and 3 nm may meet well the requirements for on-state current (Ion), power dissipation (PDP), and delay period (τ) as outlined by the International Technology Roadmap for Semiconductors (ITRS) in 2013 to achieve higher performance by the year 2028. Importantly, high performances are achieved only under a very low supply voltage (VDD = 0.05/0.10 V). Significantly, the AsGeC3 FETs exhibit remarkably lower values of both PDP and τ than those of nearly all the transistors reported up to date. These novel 2D metal-semiconductor phase transition-based FETs open up a new door for designing next-generation low-power electronic devices.
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Affiliation(s)
- Xingyi Tan
- Department of Physics, Chongqing Three Gorges University, Wanzhou, 404100, China
| | - Hengze Qu
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Jialin Yang
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Shengli Zhang
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Hua-Hua Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China.
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6
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Chen J, Sun MY, Wang ZH, Zhang Z, Zhang K, Wang S, Zhang Y, Wu X, Ren TL, Liu H, Han L. Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor. NANO-MICRO LETTERS 2024; 16:264. [PMID: 39120835 PMCID: PMC11315877 DOI: 10.1007/s40820-024-01461-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Accepted: 06/13/2024] [Indexed: 08/10/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.
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Affiliation(s)
- Jing Chen
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- BNRist, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Ming-Yuan Sun
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zhen-Hua Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zheng Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Kai Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Shuai Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China
| | - Xiaoming Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Hong Liu
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China.
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China.
- Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application, Jinan, 250100, People's Republic of China.
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7
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Cong X, Gao X, Sun H, Zhou X, Zhu Y, Gao X, Tan C, Wang J, Nian L, Nie Y, Peng H. Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor. J Am Chem Soc 2024. [PMID: 39034718 DOI: 10.1021/jacs.4c04984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
The synthesis of high-dielectric-constant (high-κ) dielectric materials and their integration with channel materials have been the key challenges in the state-of-the-art transistor architecture, as they can provide strong gate control and low operating voltage. For next-generation electronics, high-mobility two-dimensional (2D) layered semiconductors with dangling-bond-free surfaces and an atomic-thick thickness are being explored as channel materials to achieve shorter channel lengths and less interfacial scattering. Nowadays, the integration of high-κ dielectrics with high-mobility 2D semiconductors mainly relies on atomic layer deposition or transfer stacking, which may cause several undesirable problems, such as channel damage and interface traps. Here, we demonstrate the integration of high-mobility 2D semiconducting Bi2O2Se with transferable high-κ SrTiO3 as a 2D field-effect transistor by direct epitaxial growth. Remarkably, such 2D heterostructures can be efficiently transferred from the water-soluble Sr3Al2O6 sacrificial layer onto arbitrary substrates. The as-fabricated 2D Bi2O2Se/SrTiO3 transistors exhibit an on/off ratio over 104 and a subthreshold swing down to 90 mV/dec. Furthermore, the 2D Bi2O2Se/SrTiO3 heterostructures can be easily transferred onto flexible polyethylene terephthalate (PET) substrates, and the as-fabricated transistors exhibit good potential in flexible electronics. Our study opens up a new avenue for the integration of high-κ dielectrics with high-mobility 2D semiconductors and paves the way for the exploration of multifunctional electronic devices.
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Affiliation(s)
- Xuzhong Cong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Xiaoyin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210046, China
| | - Xuehan Zhou
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Yongchao Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Xin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Congwei Tan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Jingyue Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | | | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210046, China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
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8
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Fu X, Liu Z, Wang H, Xie D, Sun Y. Small Feature-Size Transistors Based on Low-Dimensional Materials: From Structure Design to Nanofabrication Techniques. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2400500. [PMID: 38884208 DOI: 10.1002/advs.202400500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Revised: 05/11/2024] [Indexed: 06/18/2024]
Abstract
For several decades after Moore's Law is proposed, there is a continuous effort to reduce the feature-size of transistors. However, as the size of transistors continues to decrease, numerous challenges and obstacles including severe short channel effects (SCEs) are emerging. Recently, low-dimensional materials have provided new opportunities for constructing small feature-size transistors due to their superior electrical properties compared to silicon. Here, state-of-the-art low-dimensional materials-based transistors with small feature-sizes are reviewed. Different from other works that mainly focus on material characteristics of a specific device structure, the discussed topics are utilizing device structure design including vertical structure and nano-gate structure, and nanofabrication techniques to achieve small feature-sizes of transistors. A comprehensive summary of these small feature-size transistors is presented by illustrating their operation mechanism, relevant fabrication processes, and corresponding performance parameters. Besides, the role of small feature-size transistors based on low-dimensional materials in further reducing the small footprint is also clarified and their cutting-edge applications are highlighted. Finally, a comparison and analysis between state-of-art transistors is made, as well as a glimpse into the future research trajectory of low dimensional materials-based small feature-size transistors is briefly outlined.
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Affiliation(s)
- Xiaqing Fu
- School of Microelectronics, Shanghai University, Shanghai, 201800, P. R. China
| | - Zhifang Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Huaipeng Wang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, P. R. China
| | - Dan Xie
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, P. R. China
| | - Yilin Sun
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, P. R. China
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9
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Yang S, Shi H, Hu Y, Si J, Chen C, Yang J, Qu H, Hu X, Zhang F, Zhang S. High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation. J Phys Chem Lett 2024; 15:5721-5727. [PMID: 38770896 DOI: 10.1021/acs.jpclett.4c01129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Exploring two-dimensional (2D) materials with a small carrier effective mass and suitable band gap is crucial for the design of metal oxide semiconductor field effect transistors (MOSFETs). Here, the quantum transport properties of stable 2D SbSeBr are simulated on the basis of first-principles calculations. Monolayer SbSeBr proves to be a competitive channel material, offering a suitable band gap of 1.18 eV and a small electron effective mass (me*) of 0.22m0. The 2D SbSeBr field effect transistor (FET) with 8 nm channel length exhibits a high on-state current of 1869 μA/μm, low power consumption of 0.080 fJ/μm, and small delay time of 0.062 ps, which can satisfy the requirements of the International Technology Roadmap for Semiconductors for high-performance devices. Moreover, despite the monolayer SbSeBr having an isotropic me*, the asymmetrical band trends enable SbSeBr FETs to display transport orientation, which emphasizes the importance of band trends and provides valuable insights for selecting channel materials.
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Affiliation(s)
- Siyu Yang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Hao Shi
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Yang Hu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Jingwen Si
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Chuyao Chen
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Jialin Yang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Hengze Qu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Xuemin Hu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
- School of Material Engineering, Jinling Institute of Technology, Nanjing, Jiangsu 211169, People's Republic of China
| | - Fengjun Zhang
- Anhui Province International Research Center on Advanced Building Materials, Anhui Jianzhu University, Hefei, Anhui 230601, People's Republic of China
| | - Shengli Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
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10
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Mandia AK, Kumar R, Lee SC, Bhattacharjee S, Muralidharan B. Magneto-transport in the monolayer MoS 2material system for high-performance field-effect transistor applications. NANOTECHNOLOGY 2024; 35:305706. [PMID: 38631306 DOI: 10.1088/1361-6528/ad3fc2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Accepted: 04/17/2024] [Indexed: 04/19/2024]
Abstract
Electronic transport in monolayer MoS2is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS2. In order to quantitatively interpret the magneto-transport behavior of monolayer MoS2on different substrate materials, identify the underlying bottlenecks, and provide guidelines for subsequent improvements, we present a deep analysis of the magneto-transport properties in the diffusive limit. Our calculations are performed on suspended monolayer MoS2and MoS2on different substrate materials taking into account remote impurity and the intrinsic and extrinsic phonon scattering mechanisms. We calculate the crucial transport parameters such as the Hall mobility, the conductivity tensor elements, the Hall factor, and the magnetoresistance over a wide range of temperatures, carrier concentrations, and magnetic fields. The Hall factor being a key quantity for calculating the carrier concentration and drift mobility, we show that for suspended monolayer MoS2at room temperature, the Hall factor value is around 1.43 for magnetic fields ranging from 0.001 to 1 Tesla, which deviates significantly from the usual value of unity. In contrast, the Hall factor for various substrates approaches the ideal value of unity and remains stable in response to the magnetic field and temperature. We also show that the MoS2over an Al2O3substrate is a good choice for the Hall effect detector. Moreover, the magnetoresistance increases with an increase in magnetic field strength for smaller magnetic fields before reaching saturation at higher magnetic fields. The presented theoretical model quantitatively captures the scaling of mobility and various magnetoresistance coefficients with temperature, carrier densities, and magnetic fields.
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Affiliation(s)
- Anup Kumar Mandia
- Indo-Korea Science and Technology Center (IKST), Jakkur, Bengaluru 560065, India
| | - Rohit Kumar
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India
| | - Seung-Cheol Lee
- Electronic Materials Research Center, KIST, Seoul 136-791, Republic of Korea
| | | | - Bhaskaran Muralidharan
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India
- Centre of Excellence in Quantum Information, Computation, Science and Technology, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India
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11
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Liu B, Yue X, Sheng C, Chen J, Tang C, Shan Y, Han J, Shen S, Wu W, Li L, Lu Y, Hu L, Liu R, Qiu ZJ, Cong C. High-Performance Contact-Doped WSe 2 Transistors Using TaSe 2 Electrodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19247-19253. [PMID: 38591143 DOI: 10.1021/acsami.4c01605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe2 flakes were stacked on doped WSe2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe2 FETs. The doped WSe2/TaSe2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ·μm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.
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Affiliation(s)
- Bingjie Liu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Xiaofei Yue
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chenxu Sheng
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Jiajun Chen
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chengjie Tang
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Yabing Shan
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Jinkun Han
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Shuwen Shen
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Wenxuan Wu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Lijia Li
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Ye Lu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Laigui Hu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Ran Liu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Zhi-Jun Qiu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chunxiao Cong
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, China
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12
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Jia X, Cheng Z, Song Y, Zhang Y, Ye Y, Li M, Cheng X, Xu W, Li Y, Dai L. Nanoscale Channel Length MoS 2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16544-16552. [PMID: 38513260 DOI: 10.1021/acsami.4c01980] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Two-dimensional transition metal dichalcogenides (TMDCs) have natural advantages in overcoming the short-channel effect in field-effect transistors (FETs) and in fabricating three-dimensional FETs, which benefit in increasing device density. However, so far, most reported works related to MoS2 FETs with a sub-100 nm channel employ mechanically exfoliated materials and all of the works involve electron beam lithography (EBL), which may limit their application in fabricating wafer-scale device arrays as demanded in integrated circuits (ICs). In this work, MoS2 FET arrays with a side-wall source and drain electrodes vertically distributed are designed and fabricated. The channel length of the as-fabricated FET is basically determined by the thickness of an insulating layer between the source and drain electrodes. The vertically distributed source and drain electrodes enable to reduce the electrode-occupied area and increase in the device density. The as-fabricated vertical FETs exhibit on/off ratios comparable to those of mechanically exfoliated MoS2 FETs with a nanoscale channel length under identical VDS. In addition, the as-fabricated FETs can work at a VDS as low as 10 mV with a desirable on/off ratio (1.9 × 107), which benefits in developing low-power devices. Moreover, the fabrication process is free from EBL and can be applied to wafer-scale device arrays. The statistical results show that the fabricated FET arrays have a device yield of 87.5% and an average on/off ratio of about 1.7 × 106 at a VDS of 10 mV, with the lowest and highest ones to be about 1.3 × 104 and 1.9 × 107, respectively, demonstrating the good reliability of our fabrication process. Our work promises a bright future for TMDCs in realizing high-density and low-power nanoelectronic devices in ICs.
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Affiliation(s)
- Xionghui Jia
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Zhixuan Cheng
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Yiwen Song
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yi Zhang
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Yu Ye
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Beijing 100871, China
| | - Minglai Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Xing Cheng
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Wanjin Xu
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Yanping Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Lun Dai
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Beijing 100871, China
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13
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Li L, Wang Q, Wu F, Xu Q, Tian J, Huang Z, Wang Q, Zhao X, Zhang Q, Fan Q, Li X, Peng Y, Zhang Y, Ji K, Zhi A, Sun H, Zhu M, Zhu J, Lu N, Lu Y, Wang S, Bai X, Xu Y, Yang W, Li N, Shi D, Xian L, Liu K, Du L, Zhang G. Epitaxy of wafer-scale single-crystal MoS 2 monolayer via buffer layer control. Nat Commun 2024; 15:1825. [PMID: 38418816 PMCID: PMC10901795 DOI: 10.1038/s41467-024-46170-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Accepted: 02/16/2024] [Indexed: 03/02/2024] Open
Abstract
Monolayer molybdenum disulfide (MoS2), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS2 single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS2 monolayers on industry-compatible substrates of c-plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO3 precursor ratio control. The unidirectional alignment and seamless stitching of MoS2 domains across the entire wafer are demonstrated through cross-dimensional characterizations ranging from atomic- to centimeter-scale. The epitaxial monolayer MoS2 single crystal shows good wafer-scale uniformity and state-of-the-art quality, as evidenced from the ~100% phonon circular dichroism, exciton valley polarization of ~70%, room-temperature mobility of ~140 cm2v-1s-1, and on/off ratio of ~109. Our work provides a simple strategy to produce wafer-scale single-crystal 2D semiconductors on commercial insulator substrates, paving the way towards the further extension of Moore's law and industrial applications of 2D electronic circuits.
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Affiliation(s)
- Lu Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Fanfan Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qiaoling Xu
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
- College of Physics and Electronic Engineering, Center for Computational Sciences, Sichuan Normal University, Chengdu, 610068, China
| | - Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghe Wang
- Collaborative Innovation Center of Quantum Matter and School of Physics, Peking University, 100871, Beijing, China
| | - Xuan Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinkai Fan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yalin Peng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yangkun Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Kunshan Ji
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Aomiao Zhi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Huacong Sun
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingtong Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jundong Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Nianpeng Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Ying Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Shuopei Wang
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Na Li
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Lede Xian
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Kaihui Liu
- Collaborative Innovation Center of Quantum Matter and School of Physics, Peking University, 100871, Beijing, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China.
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
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14
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Xu Y, Li D, Sun H, Xu H, Li P. Comprehensive understanding of electron mobility and superior performance in sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFETs. Phys Chem Chem Phys 2024; 26:4284-4297. [PMID: 38231547 DOI: 10.1039/d3cp05327j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
In this study, we have investigated the electron mobility of monolayered (ML) tetrahex-GeC2 by solving the linearized Boltzmann transport equation (BTE) with the normalized full-band relaxation time approximation (RTA) using density functional theory (DFT). Contrary to what the deformation potential theory (DPT) suggested, the ZA acoustic mode was determined to be the most restrictive for electron mobility, not the LA mode. The electron mobility at 300 K is 803 cm2 (V s)-1, exceeding the 400 cm2 (V s)-1 of MoS2 which was calculated using the same method and measured experimentally. The ab initio quantum transport simulations were performed to assess the performance limits of sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs, including gate lengths (Lg) of 3 nm, 5 nm, 7 nm, and 9 nm, with the underlap (UL) effect considered for the first two. For both high-performance (HP) and low-power (LP) applications, their on-state currents (Ion) can meet the requirements of similar nodes in the ITRS 2013. In particular, the Ion is more remarkable for HP applications than that of the extensively studied MoS2. For LP applications, the Ion values at Lg of 7 and 9 nm surpass those of arsenene, known for having the largest Ion among 2D semiconductors. Subthreshold swings (SSs) as low as 69/53 mV dec-1 at an Lg of 9 nm were observed for HP/LP applications, and 73 mV dec-1 at an Lg of 5 nm for LP applications, indicating the excellent gate control capability. Moreover, the delay time τ and power dissipation (PDP) at Lg values of 3 nm, 5 nm, 7 nm, and 9 nm are all below the upper limits of the ITRS 2013 HP/LP proximity nodes and are comparable to or lower than those of typical 2D semiconductors. The sub-10 nm DG ML tetrahex-GeC2 n-type MOSFETs can be down-scaled to 9 nm and 5 nm for HP and LP applications, respectively, displaying desirable Ion, delay time τ, and PDP in the ballistic limit, making them a potential choice for sub-10 nm transistors.
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Affiliation(s)
- Yuehua Xu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
| | - Daqing Li
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
| | - He Sun
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
| | - Haowen Xu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu, China.
| | - Pengfei Li
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
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15
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Chou BJ, Chung YY, Yun WS, Hsu CF, Li MY, Su SK, Liew SL, Hou VDH, Chen CW, Kei CC, Shen YY, Chang WH, Lee TY, Cheng CC, Radu IP, Chien CH. High-performance monolayer MoS 2nanosheet GAA transistor. NANOTECHNOLOGY 2024; 35:125204. [PMID: 38061057 DOI: 10.1088/1361-6528/ad134b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Accepted: 12/07/2023] [Indexed: 01/05/2024]
Abstract
In this article, a 0.7 nm thick monolayer MoS2nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high-κmetal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410μAμm-1with a large on/off ratio of 6 × 108at drain voltage = 1 V. The extracted contact resistance is 0.48 ± 0.1 kΩμm in monolayer MoS2NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications.
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Affiliation(s)
- Bo-Jhih Chou
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Yun-Yan Chung
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Wei-Sheng Yun
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Chen-Feng Hsu
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Ming-Yang Li
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Sheng-Kai Su
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - San-Lin Liew
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | | | - Chien-Wei Chen
- Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan
| | - Chi-Chung Kei
- Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan
| | - Yun-Yang Shen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Wen-Hao Chang
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - T Y Lee
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | | | - Iuliana P Radu
- Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Chao-Hsin Chien
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
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16
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Liu L, Chen Y, Chen L, Xie B, Li G, Kong L, Tao Q, Li Z, Yang X, Lu Z, Ma L, Lu D, Yang X, Liu Y. Ultrashort vertical-channel MoS 2 transistor using a self-aligned contact. Nat Commun 2024; 15:165. [PMID: 38167517 PMCID: PMC10761794 DOI: 10.1038/s41467-023-44519-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Accepted: 12/15/2023] [Indexed: 01/05/2024] Open
Abstract
Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However, simultaneously scaling the channel length of these short-gate transistor is still challenging, and could be largely attributed to the processing difficulties to precisely align source-drain contact with gate electrode. Here, we report a self-alignment process for realizing ultra-scaled 2D transistors. By mechanically folding a graphene/BN/MoS2 heterostructure, source-drain metals could be precisely aligned around the folded edge, and the channel length is only dictated by heterostructure thickness. Together, we could realize sub-1 nm gate length and sub-50 nm channel length for vertical MoS2 transistor simultaneously. The self-aligned device exhibits on-off ratio over 105 and on-state current of 250 μA/μm at 4 V bias, which is over 40 times higher compared to control sample without self-alignment process.
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Affiliation(s)
- Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Long Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Biao Xie
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guoli Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
| | - Lingan Kong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Quanyang Tao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xiaokun Yang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
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17
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Shanmugam A, Thekke Purayil MA, Dhurjati SA, Thalakulam M. Physical vapor deposition-free scalable high-efficiency electrical contacts to MoS 2. NANOTECHNOLOGY 2023; 35:115201. [PMID: 38055966 DOI: 10.1088/1361-6528/ad12e4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Accepted: 12/05/2023] [Indexed: 12/08/2023]
Abstract
Fermi-level pinning caused by the kinetic damage during metallization has been recognized as one of the major reasons for the non-ideal behavior of electrical contacts, forbidding reaching the Schottky-Mott limit. In this manuscript, we present a scalable technique wherein Indium, a low-work-function metal, is diffused to contact a few-layered MoS2flake. The technique exploits a smooth outflow of Indium over gold electrodes to make edge contacts to pre-transferred MoS2flakes. We compare the performance of three pairs of contacts made onto the same MoS2flake, the bottom-gold, top-gold, and Indium contacts, and find that the Indium contacts are superior to other contacts. The Indium contacts maintain linearI-Vcharacteristics down to cryogenic temperatures with an extracted Schottky barrier height of ∼2.1 meV. First-principle calculations show the induced in-gap states close to the Fermi level, and the damage-free contact interface could be the reason for the nearly Ohmic behavior of the Indium/MoS2interface.
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Affiliation(s)
- Anusha Shanmugam
- Indian Institute of Science Education & Research Thiruvananthapuram, Kerala 695551, India
| | | | | | - Madhu Thalakulam
- Indian Institute of Science Education & Research Thiruvananthapuram, Kerala 695551, India
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18
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Tan X, Li Q, Ren D, Fu HH. The device performance limit of in-plane monolayer VTe 2/WTe 2 heterojunction-based field-effect transistors. NANOSCALE 2023. [PMID: 38047474 DOI: 10.1039/d3nr03974a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
To overcome the scaling restriction on silicon-based field-effect transistors (FETs), two-dimensional (2D) transition metal dichalcogenides (TMDs) have been strongly proposed as alternative materials. To explore the device performance limit of TMD-based FETs, in this work, the ab initio quantum transport approach is utilized to study the transport properties of monolayer VTe2/WTe2 heterojunction-based FETs possessing double gates (DGs) with a 5 nm gate length (Lg). Our theoretical simulations demonstrate that the DG-cold-source VTe2/WTe2 FETs with a 5 nm Lg and 2 or 3 nm proper underlap (UL) meet the basic requirements of the on-state current (Ion), power dissipation (PDP), and delay time (τ) for the 2028 needs of the International Technology Roadmap for Semiconductor (ITRS) 2013, which ensures their high-performance and low-power-dissipation device applications. Moreover, the DG-cold-source VTe2/WTe2-based FETs with a 3 nm Lg and 2 or 3 nm UL meet the high-performance requirements of Ion, τ, and PDP for the 2028 needs of ITRS 2013. Additionally, by further considering the negative capacitance technology in devices, the parameters τ, Ion, and PDP of the VTe2/WTe2-based FETs with a 1 nm Lg and 3 nm UL meet well with the 2028 needs for ITRS 2013 towards high-performance device applications. Our theoretical results uncover that the 2D DG-cold-source VTe2/WTe2 FETs can be used as a new kind of promising material candidate to drive the scaling of Moore's law down to 1 nm.
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Affiliation(s)
- Xingyi Tan
- Department of Physics, Chongqing Three Gorges University, Wanzhou, 404100, China
- College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi, 445000, China
| | - Qiang Li
- College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi, 445000, China
| | - Dahua Ren
- College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi, 445000, China
| | - Hua-Hua Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China.
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19
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Cao ZL, Guo XH, Yao KL, Zhu L. Sub-9 nm high-performance and low-power transistors based on an in-plane NbSe 2/MoSe 2/NbSe 2 heterojunction. NANOSCALE 2023; 15:17029-17035. [PMID: 37846516 DOI: 10.1039/d3nr04514e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/18/2023]
Abstract
Due to the ability to reduce the gate length of field-effect transistors (FETs) down to sub-10 nm without obviously affecting the performance of the device, the utilization of two-dimensional (2D) semiconductor materials as channel materials for FETs is of great interest. However, in-plane 2D/2D heterojunction FETs have received less attention in previous studies than vertical van der Waals heterojunction devices. Based on the above reasons, this study has investigated the transport properties of an in-plane NbSe2/MoSe2/NbSe2 heterojunction FET with different gate lengths by using ab initio quantum transport simulation. The results reveal that a gate length of sub-9 nm gives the device a low subthreshold swing down to 62 mV dec-1 and a high on-state current up to 1040 μA μm-1. Most importantly, the on-state current, delay time, and power dissipation of the FET with the optimized channel length can nearly meet or even exceed the high-performance and low-power requirements of the International Technology Roadmap for Semiconductors. The findings for this FET can provide the design and development guidance for other in-plane heterojunction electrical devices in the post-Moore era.
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Affiliation(s)
- Zeng-Lin Cao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
| | - Xiao-Hui Guo
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
| | - Kai-Lun Yao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
| | - Lin Zhu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
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20
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Bai H, Liu D, Pan H. LaOMS 2 (M = Ti, V, and Cr): novel crystal spin valves without contact. MATERIALS HORIZONS 2023; 10:5126-5132. [PMID: 37695805 DOI: 10.1039/d3mh01182h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
2D materials are widely investigated for application in nanodevices and spintronics. Here, we demonstrate that a family of structures, LaOMS2 (M = Ti, V, and Cr), where a La2O2 layer is sandwiched between two magnetic MS2 layers, are suitable to be used as spin valves without contact. We show that they are stable and exhibit unique magnetic and electronic properties. We find that (1) each MS2 layer is ferromagnetic with the magnetic moment mainly contributed by the M ion and the coupling between the two MS2 layers in one structure is negligible due to the blocking of the La2O2 layer; (2) LaOMS2 can be a half-metal in the ferromagnetic (FM) state and a conductor in the interlayer antiferromagnetic (inter-AFM) state, and the total energies of the two states are almost identical; (3) the magnetic properties and exchange energy can be effectively controlled by contacting with other materials; and (4) a 100% spin current is achieved in FM LaOMS2. Our results provide not only novel structures for practical application in spintronics, but also strategies for designing new devices.
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Affiliation(s)
- Haoyun Bai
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China.
| | - Di Liu
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China.
| | - Hui Pan
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China.
- Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, Macao SAR, 999078, P. R. China
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21
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Yuan J, Dai JQ, Liu YZ, Zhao MW. Polarization-tunable interfacial properties in monolayer-MoS 2 transistors integrated with ferroelectric BiAlO 3(0001) polar surfaces. Phys Chem Chem Phys 2023; 25:25177-25190. [PMID: 37712428 DOI: 10.1039/d3cp02866f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
With the explosion of data-centric applications, new in-memory computing technologies, based on nonvolatile memory devices, have become competitive due to their merged logic-memory functionalities. Herein, employing first-principles quantum transport simulation, we theoretically investigate for the first time the electronic and contact properties of two types of monolayer (ML)-MoS2 ferroelectric field-effect transistors (FeFETs) integrated with ferroelectric BiAlO3(0001) (BAO(0001)) polar surfaces. Our study finds that the interfacial properties of the investigated partial FeFET devices are highly tunable by switching the electric polarization of the ferroelectric BAO(0001) dielectric. Specifically, the transition from quasi-Ohmic to the Schottky contact, as well as opposite contact polarity of respective n-type and p-type Schottky contact under two polarization states can be obtained, suggesting their superior performance metrics in terms of nonvolatile information storage. In addition, due to the feature of (quasi-)Ohmic contact in some polarization states, the explored FeFET devices, even when operating in the regular field-effect transistor (FET) mode, can be extremely significant in realizing a desirable low threshold voltage and interfacial contact resistance. In conjunction with the formed van der Waals (vdW) interfaces in ML-MoS2/ferroelectric systems with an interlayer, the proposed FeFETs are expected to provide excellent device performance with regard to cycling endurance and memory density.
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Affiliation(s)
- Jin Yuan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Jian-Qing Dai
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Yu-Zhu Liu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Miao-Wei Zhao
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
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22
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Zhu X, Jiang H, Zhang Y, Wang D, Fan L, Chen Y, Qu X, Yang L, Liu Y. Tunable Contact Types and Interfacial Electronic Properties in TaS 2/MoS 2 and TaS 2/WSe 2 Heterostructures. Molecules 2023; 28:5607. [PMID: 37513478 PMCID: PMC10385421 DOI: 10.3390/molecules28145607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 07/18/2023] [Accepted: 07/19/2023] [Indexed: 07/30/2023] Open
Abstract
Following the successful experimental synthesis of single-layer metallic 1T-TaS2 and semiconducting 2H-MoS2, 2H-WSe2, we perform a first-principles study to investigate the electronic and interfacial features of metal/semiconductor 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 van der Waals heterostructures (vdWHs) contact. We show that 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 form n-type Schottky contact (n-ShC type) and p-type Schottky contact (p-ShC type) with ultralow Schottky barrier height (SBH), respectively. This indicates that 1T-TaS2 can be considered as an effective metal contact with high charge injection efficiency for 2H-MoS2, 2H-WSe2 semiconductors. In addition, the electronic structure and interfacial properties of 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 van der Waals heterostructures can be transformed from n-type to p-type Schottky contact through the effect of layer spacing and the electric field. At the same time, the transition from Schottky contact to Ohmic contact can also occur by relying on the electric field and different interlayer spacing. Our results may provide a new approach for photoelectric application design based on metal/semiconductor 1T-TaS2/2H-MoS2 and 1T-TaS2/2H-WSe2 van der Waals heterostructures.
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Affiliation(s)
- Xiangjiu Zhu
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Hongxing Jiang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Yukai Zhang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Dandan Wang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Lin Fan
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Yanli Chen
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Xin Qu
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Lihua Yang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
| | - Yang Liu
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Key Laboratory of Preparation and Application of Environmental Friendly Materials, College of Physics, Jilin Normal University, Changchun 130103, China
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23
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Tian J, Wang Q, Huang X, Tang J, Chu Y, Wang S, Shen C, Zhao Y, Li N, Liu J, Ji Y, Huang B, Peng Y, Yang R, Yang W, Watanabe K, Taniguchi T, Bai X, Shi D, Du L, Zhang G. Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance. NANO LETTERS 2023; 23:2764-2770. [PMID: 37010357 DOI: 10.1021/acs.nanolett.3c00031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2) are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from their atomic thickness, dangling-bond-free flat surface, and excellent gate controllability. However, despite great prospects, the fabrication of 2D ultrashort channel FETs with high performance and uniformity remains a challenge. Here, we report a self-encapsulated heterostructure undercut technique for the fabrication of sub-10 nm channel length MoS2 FETs. The fabricated 9 nm channel MoS2 FETs exhibit superior performances compared with sub-15 nm channel length including the competitive on-state current density of 734/433 μA/μm at VDS = 2/1 V, record-low DIBL of ∼50 mV/V, and superior on/off ratio of 3 × 107 and low subthreshold swing of ∼100 mV/dec. Furthermore, the ultrashort channel MoS2 FETs fabricated by this new technique show excellent homogeneity. Thanks to this, we scale the monolayer inverter down to sub-10 nm channel length.
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Affiliation(s)
- Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xudan Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yanbang Chu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Shuopei Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Cheng Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yancong Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Na Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Jieying Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yiru Ji
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Biying Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yalin Peng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Kenji Watanabe
- National Institute for Materials Science1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science1-1 Namiki, Tsukuba 305-0044, Japan
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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24
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Jiang J, Xu L, Qiu C, Peng LM. Ballistic two-dimensional InSe transistors. Nature 2023; 616:470-475. [PMID: 36949203 DOI: 10.1038/s41586-023-05819-w] [Citation(s) in RCA: 40] [Impact Index Per Article: 40.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2022] [Accepted: 02/10/2023] [Indexed: 03/24/2023]
Abstract
The International Roadmap for Devices and Systems (IRDS) forecasts that, for silicon-based metal-oxide-semiconductor (MOS) field-effect transistors (FETs), the scaling of the gate length will stop at 12 nm and the ultimate supply voltage will not decrease to less than 0.6 V (ref. 1). This defines the final integration density and power consumption at the end of the scaling process for silicon-based chips. In recent years, two-dimensional (2D) layered semiconductors with atom-scale thicknesses have been explored as potential channel materials to support further miniaturization and integrated electronics. However, so far, no 2D semiconductor-based FETs have exhibited performances that can surpass state-of-the-art silicon FETs. Here we report a FET with 2D indium selenide (InSe) with high thermal velocity as channel material that operates at 0.5 V and achieves record high transconductance of 6 mS μm-1 and a room-temperature ballistic ratio in the saturation region of 83%, surpassing those of any reported silicon FETs. An yttrium-doping-induced phase-transition method is developed for making ohmic contacts with InSe and the InSe FET is scaled down to 10 nm in channel length. Our InSe FETs can effectively suppress short-channel effects with a low subthreshold swing (SS) of 75 mV per decade and drain-induced barrier lowering (DIBL) of 22 mV V-1. Furthermore, low contact resistance of 62 Ω μm is reliably extracted in 10-nm ballistic InSe FETs, leading to a smaller intrinsic delay and much lower energy-delay product (EDP) than the predicted silicon limit.
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Affiliation(s)
- Jianfeng Jiang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China
| | - Chenguang Qiu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
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25
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Sun X, Chen Y, Zhao D, Taniguchi T, Watanabe K, Wang J, Xue J. Measuring Band Modulation of MoS 2 with Ferroelectric Gates. NANO LETTERS 2023; 23:2114-2120. [PMID: 36867589 DOI: 10.1021/acs.nanolett.2c04326] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Electronic properties of two-dimensional (2D) materials can be significantly tuned by an external electric field. Ferroelectric gates can provide a strong polarization electric field. Here, we report the measurements of the band structure of few-layer MoS2 modulated by a ferroelectric P(VDF-TrFE) gate with contact-mode scanning tunneling spectroscopy. When P(VDF-TrFE) is fully polarized, an electric field up to ∼0.62 V/nm through the MoS2 layers is inferred from the measured band edges, which affects the band structure significantly. First, strong band bending in the vertical direction signifies the Franz-Keldysh effect and a large extension of the optical absorption edge. Photons with energy of half the band gap are still absorbed with 20% of the absorption probability of photons at the band gap. Second, the electric field greatly enlarges the energy separations between the quantum-well subbands. Our study intuitively demonstrates the great potential of ferroelectric gates in band structure manipulation of 2D materials.
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Affiliation(s)
- Xinzuo Sun
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yan Chen
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China
| | - Dongyang Zhao
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jianlu Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Jiamin Xue
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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26
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Alanazi AT, Alotaibi A, Alqahtani M, Rice JH. Dichalcogenide and Metal Oxide Semiconductor-Based Composite to Support Plasmonic Catalysis. ACS OMEGA 2023; 8:6318-6324. [PMID: 36844575 PMCID: PMC9947995 DOI: 10.1021/acsomega.2c06337] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/01/2022] [Accepted: 02/03/2023] [Indexed: 06/18/2023]
Abstract
Nanocomposites comprising plasmon active metal nanostructures and semiconductors have been used to control the charge states in the metal to support catalytic activity. In this context dichalcogenides when combined with metal oxides offer the potential to control charge states in plasmonic nanomaterials. Using a model plasmonic mediated oxidation reaction p-amino thiophenol ↔ p-nitrophenol, we show that through the introduction of transition metal dichalcogenide nanomaterial, reaction outcomes can be influenced, achieved through controlling the occurrence of the reaction intermediate dimercaptoazobenzene by opening new electron transfer routes in a semiconductor-plasmonic system. This study demonstrates the ability to control plasmonic reactions by carefully controlling the choice of semiconductors.
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Affiliation(s)
- Ahmed T. Alanazi
- School
of Physics, University College Dublin, Belfield, 4 Dublin, Ireland
| | - Aeshah Alotaibi
- School
of Physics, University College Dublin, Belfield, 4 Dublin, Ireland
| | - Mahdi Alqahtani
- King
Abdulaziz City for Science and Technology (KACST), Riyadh 12371, Saudi Arabia
| | - James H. Rice
- School
of Physics, University College Dublin, Belfield, 4 Dublin, Ireland
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27
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Park YH, Kim D, Hiragond CB, Lee J, Jung JW, Cho CH, In I, In SI. Phase-controlled 1T/2H-MoS2 interaction with reduced TiO2 for highly stable photocatalytic CO2 reduction into CO. J CO2 UTIL 2023. [DOI: 10.1016/j.jcou.2022.102324] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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28
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Ding D, Wang S, Xia Y, Li P, He D, Zhang J, Zhao S, Yu G, Zheng Y, Cheng Y, Xie M, Ding F, Jin C. Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate. ACS NANO 2022; 16:17356-17364. [PMID: 36200750 DOI: 10.1021/acsnano.2c08188] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
A mechanistic understanding of interactions between atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., ∼88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., ∼12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, ∼64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (∼36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (∼2.4 Å), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches ∼3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.
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Affiliation(s)
- Degong Ding
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yipu Xia
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Pai Li
- Center for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Daliang He
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Junqiu Zhang
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yonghui Zheng
- Key Laboratory of Polar Materials and Devices and Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices and Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Maohai Xie
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
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Wei T, Han Z, Zhong X, Xiao Q, Liu T, Xiang D. Two dimensional semiconducting materials for ultimately scaled transistors. iScience 2022; 25:105160. [PMID: 36204270 PMCID: PMC9529977 DOI: 10.1016/j.isci.2022.105160] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022] Open
Abstract
Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry.
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Affiliation(s)
- Tianyao Wei
- Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200438, People’s Republic of China
| | - Zichao Han
- Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Xinyi Zhong
- Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
| | - Qingyu Xiao
- Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
| | - Tao Liu
- Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
- Zhangjiang Fudan International Innovation Centre, Fudan University, Shanghai 200438, People’s Republic of China
- Corresponding author
| | - Du Xiang
- Frontier Institute of Chip and System, Fudan University, Shanghai 200438, People’s Republic of China
- Zhangjiang Fudan International Innovation Centre, Fudan University, Shanghai 200438, People’s Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200232, People’s Republic of China
- Corresponding author
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30
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Sun Z, Pang CS, Wu P, Hung TYT, Li MY, Liew SL, Cheng CC, Wang H, Wong HSP, Li LJ, Radu I, Chen Z, Appenzeller J. Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS 2. ACS NANO 2022; 16:14942-14950. [PMID: 36094410 DOI: 10.1021/acsnano.2c05902] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Scaling of monolayer transition metal dichalcogenide (TMD) field-effect transistors (FETs) is an important step toward evaluating the application space of TMD materials. Although some work on ultrashort channel monolayer (ML) TMD FETs has been published, there exist no comprehensive studies that assess their performance in a statistically relevant manner, providing critical insights into the impact of the device geometry. Part of the reason for the absence of such a study is the substantial variability of TMD devices when processes are not carefully controlled. In this work, we show a statistical study of ultrashort channel double-gated ML WS2 FETs exhibiting excellent device performance and limited device-to-device variations. From a detailed analysis of cross-sectional scanning transmission electron microscopy (STEM) images and careful technology computer aided design (TCAD) simulations, we evaluated, in particular, an unexpected deterioration of the subthreshold characteristics for our shortest devices. Two potential candidates for the observed behavior were identified, i.e., buckling of the TMD on the substrate and loss of gate control due to the source geometry and the high-k dielectric between the metal gate and the metal source electrode.
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31
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Gan Z, Najafidehaghani E, Han SH, Shradha S, Abtahi F, Neumann C, Picker J, Vogl T, Hübner U, Eilenberger F, George A, Turchanin A. Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications. SMALL METHODS 2022; 6:e2200300. [PMID: 35957515 DOI: 10.1002/smtd.202200300] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Revised: 07/14/2022] [Indexed: 06/15/2023]
Abstract
A simple, large area, and cost-effective soft lithographic method is presented for the patterned growth of high-quality 2D transition metal dichalcogenides (TMDs). Initially, a liquid precursor (Na2 MoO4 in an aqueous solution) is patterned on the growth substrate using the micromolding in capillaries technique. Subsequently, a chemical vapor deposition step is employed to convert the precursor patterns to monolayer, few layers, or bulk TMDs, depending on the precursor concentration. The grown patterns are characterized using optical microscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and photoluminescence spectroscopy to reveal their morphological, chemical, and optical characteristics. Additionally, electronic and optoelectronic devices are realized using the patterned TMDs and tested for their applicability in field effect transistors and photodetectors. The photodetectors made of MoS2 line patterns show a very high responsivity of 7674 A W-1 and external quantum efficiency of 1.49 × 106 %. Furthermore, the multiple grain boundaries present in patterned TMDs enable the fabrication of memtransistor devices. The patterning technique presented here may be applied to many other TMDs and related heterostructures, potentially advancing the fabrication of TMDs-based device arrays.
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Affiliation(s)
- Ziyang Gan
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
| | - Emad Najafidehaghani
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
| | - Seung Heon Han
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
| | - Sai Shradha
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein-Str 15, 07745, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
| | - Fatemeh Abtahi
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein-Str 15, 07745, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
| | - Christof Neumann
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
| | - Julian Picker
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
| | - Tobias Vogl
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein-Str 15, 07745, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Uwe Hübner
- Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745, Jena, Germany
| | - Falk Eilenberger
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein-Str 15, 07745, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
- Fraunhofer-Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745, Jena, Germany
| | - Antony George
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
| | - Andrey Turchanin
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstr. 10, 07743, Jena, Germany
- Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str 6, 07745, Jena, Germany
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32
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Wang K, Taniguchi T, Watanabe K, Xue J. Natural p-n Junctions at the MoS 2 Flake Edges. ACS APPLIED MATERIALS & INTERFACES 2022; 14:39039-39045. [PMID: 35984409 DOI: 10.1021/acsami.2c09457] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) semiconductors are holding promises as channel materials for field-effect transistors. Compared to traditional three-dimensional (3D) semiconductors whose electronic and optical properties are hindered by dangling bonds and trap states at the surfaces, 2D materials with saturated chemical bonds on the surface maintain the excellent properties even when device thickness scales down to monolayer. However, dangling bonds are unavoidable at their edges, which are often overlooked and should have important effects on the devices. Here, we show that the edges of as-exfoliated and etched MoS2 are naturally p-type doped and can form p-n junctions with the bulk of the flake. The width of these edge regions is around 20 nm. While their existence could present challenges for the shrinkage of devices, they can be exploited to form rectifying or optoelectronic devices based on a single flake of MoS2 without the need of an elaborate extrinsic doping process.
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Affiliation(s)
- Kang Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- University of Chinese Academy of Science, Beijing 100190, China
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-004, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Jiamin Xue
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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33
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Hayashi K, Kataoka M, Sato S. Epitaxial Growth of SnS 2 Ribbons on a Au-Sn Alloy Seed Film Surface. J Phys Chem Lett 2022; 13:6147-6152. [PMID: 35762750 DOI: 10.1021/acs.jpclett.2c00906] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional metal chalcogenide film has attracted considerable interest for its use as an emerging device material for nanoelectronics. The film has been synthesized by various methods such as chemical vapor deposition, molecular beam epitaxy, and thermal vapor sulfurization. In this study, we took a new approach to synthesize tin disulfide (SnS2) by using Au-Sn alloy film as a metal seed deposited on a sapphire substrate. Multilayer SnS2 films were formed in a ribbon shape on (111)-oriented Au film and were aligned in the directions of threefold rotational symmetry. Furthermore, the SnS2 was found to have an epitaxial relationship relative to the Au film and the sapphire substrate as follows: SnS2[2̅110] || Au[101̅] || Al2O3[011̅0]. The segregation of grains consisting of a Sn-rich phase on the Au film surface and the subsequent sulfurization of these grains can be the key to the epitaxial SnS2 ribbon formation.
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Affiliation(s)
- Kenjiro Hayashi
- Fujitsu Limited, 4-1-1 kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
| | - Masako Kataoka
- Fujitsu Limited, 4-1-1 kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
| | - Shintaro Sato
- Fujitsu Limited, 4-1-1 kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
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34
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Devassy AM, Kamalakshan A, Jamuna NA, Ansilda R, Mandal S. Enhanced Catalytic Activity of a New Nanobiocatalytic System Formed by the Adsorption of Cytochrome c on Pluronic Triblock Copolymer Stabilized MoS 2 Nanosheets. ACS OMEGA 2022; 7:16593-16604. [PMID: 35601299 PMCID: PMC9118411 DOI: 10.1021/acsomega.2c00839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2022] [Accepted: 04/15/2022] [Indexed: 06/15/2023]
Abstract
The formation of nanobiohybrids through the immobilization of enzymes on functional nanomaterials has opened up exciting research opportunities at the nanobiointerfaces. These systems hold great promise for a wide range of applications in biosensing, biocatalytic, and biomedical fields. Here, we report the formation of a hybrid nanobiocatalytic system through the adsorption of cytochrome c (Cyt c) on pluronic triblock copolymer, P123 (PEO-b-PPO-b-PEO), stabilized MoS2 nanosheets. The use of pluronic polymer has helped not only to greatly stabilize the exfoliated MoS2 nanosheets but also to allow easy adsorption of Cyt c on the nanosheets without major structural changes due to its excellent biocompatibility and soft protein-binding property. By comparing the catalytic activity of the Cyt c-MoS2 nanobiohybrid with that of the free Cyt c and as-prepared MoS2 nanosheets, we have demonstrated the active role of the nanobiointeractions in enhancing the catalytic activity of the hybrid. Slight structural perturbation at the active site of the Cyt c upon adsorption on MoS2 has primarily facilitated the peroxidase activity of the Cyt c. As the MoS2 nanosheets and the native Cyt c individually exhibit weaker intrinsic peroxidase activities, their mutual modulation at the nanobiointerface has made the Cyt c-MoS2 a novel nanobiocatalyst with superior activity.
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Affiliation(s)
| | - Adithya Kamalakshan
- Department of Chemistry, National Institute of Technology, Tiruchirappalli, Tamil Nadu 620015, India
| | - Nidhi Anilkumar Jamuna
- Department of Chemistry, National Institute of Technology, Tiruchirappalli, Tamil Nadu 620015, India
| | - Roselin Ansilda
- Department of Chemistry, National Institute of Technology, Tiruchirappalli, Tamil Nadu 620015, India
| | - Sarthak Mandal
- Department of Chemistry, National Institute of Technology, Tiruchirappalli, Tamil Nadu 620015, India
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35
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Li Q, Fang S, Liu S, Xu L, Xu L, Yang C, Yang J, Shi B, Ma J, Yang J, Quhe R, Lu J. Performance Limit of Ultrathin GaAs Transistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23597-23609. [PMID: 35575689 DOI: 10.1021/acsami.2c01134] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
High-electron-mobility group III-V compounds have been regarded as a promising successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide (GaAs) is an outstanding member of the III-V family due to its advantage of both good n- and p-type device performance. Monolayer (ML) GaAs is the limit form of ultrathin GaAs. Here, a hydrogenated ML GaAs (GaAsH2) FET is simulated by ab initio quantum-transport methods. The n- and p-type ML GaAsH2 metal-oxide-semiconductor FETs (MOSFETs) can well satisfy the on-state current, delay time, power dissipation, and energy-delay product requirements of the International Technology Roadmap for Semiconductors until the gate length is scaled down to 3/4 and 3/5 nm for the high-performance/low-power applications, respectively. Therefore, ultrathin GaAs is a prominent channel candidate for devices in the post-Moore era. The p-type ML GaAsH2 MOSFETs with a 2% uniaxially compressive strain and the unstrained n-type counterparts have symmetrical performance for the high-performance application, making ultrathin GaAs applicable for complementary MOS integrated circuits.
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Affiliation(s)
- Qiuhui Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Shibo Fang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Shiqi Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Lin Xu
- Department of Chemistry, The University of Hong Kong, Pokfulam 999077, P. R. China
| | - Linqiang Xu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Chen Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Jie Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Bowen Shi
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Jiachen Ma
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, P. R. China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, P. R. China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, P. R. China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, P. R. China
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36
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Ye B, Jiang X, Gu Y, Yang G, Liu Y, Zhao H, Yang X, Wei C, Zhang X, Lu N. Quantum transport of short-gate MOSFETs based on monolayer MoSi 2N 4. Phys Chem Chem Phys 2022; 24:6616-6626. [PMID: 35234236 DOI: 10.1039/d2cp00086e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Abstract
The high carrier mobility, appropriate band gap and good environmental stability of two-dimensional (2D) MoSi2N4 enable it to be an appropriate channel material for transistors with excellent performance. Therefore, we predict the performance of double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on monolayer (ML) MoSi2N4 by ab initio quantum-transport calculations. The results show that the on-state current of the p-type device is remarkable when the gate length is greater than 4 nm, which can meet the high performance requirements of the International Technology Roadmap for Semiconductors (ITRS), 2013 version. Moreover, the gate length can be reduced to 3 nm when an underlap (UL) structure is employed in the MOSFET, and the sub-threshold swing, intrinsic delay time and power consumption also perform well. The calculation results reveal that ML MoSi2N4 will be a promising alternative for transistor channel materials in the post-silicon era.
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Affiliation(s)
- Bingjie Ye
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China.
| | - Xuecheng Jiang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China.
| | - Yan Gu
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China.
| | - Guofeng Yang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China.
| | - Yushen Liu
- School of Electronic and Information Engineering, Suzhou Key Laboratory of Advanced Lighting and Display Technologies, Changshu Institute of Technology, Changshu 215556, China
| | - Huiqin Zhao
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China.
| | - Xifeng Yang
- School of Electronic and Information Engineering, Suzhou Key Laboratory of Advanced Lighting and Display Technologies, Changshu Institute of Technology, Changshu 215556, China
| | - Chunlei Wei
- Lumisource Technologies Co., Ltd, Wuxi, 214192, China
| | - Xiumei Zhang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China.
| | - Naiyan Lu
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China.
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37
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Atomic Layer Deposition of Ultrathin La2O3/Al2O3 Nanolaminates on MoS2 with Ultraviolet Ozone Treatment. MATERIALS 2022; 15:ma15051794. [PMID: 35269024 PMCID: PMC8911297 DOI: 10.3390/ma15051794] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2022] [Revised: 02/21/2022] [Accepted: 02/25/2022] [Indexed: 12/10/2022]
Abstract
Due to the chemically inert surface of MoS2, uniform deposition of ultrathin high-κ dielectric using atomic layer deposition (ALD) is difficult. However, this is crucial for the fabrication of field-effect transistors (FETs). In this work, the atomic layer deposition growth of sub-5 nm La2O3/Al2O3 nanolaminates on MoS2 using different oxidants (H2O and O3) was investigated. To improve the deposition, the effects of ultraviolet ozone treatment on MoS2 surface are also evaluated. It is found that the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates change greatly for different oxidants and treatment processes. These changes are found to be associated with the residual of metal carbide caused by the insufficient interface reactions. Ultraviolet ozone pretreatment can substantially improve the initial growth of sub-5 nm H2O-based or O3-based La2O3/Al2O3 nanolaminates, resulting in a reduction of residual metal carbide. All results indicate that O3-based La2O3/Al2O3 nanolaminates on MoS2 with ultraviolet ozone treatment yielded good electrical performance with low leakage current and no leakage dot, revealing a straightforward approach for realizing sub-5 nm uniform La2O3/Al2O3 nanolaminates on MoS2.
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38
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Di Bernardo I, Blyth J, Watson L, Xing K, Chen YH, Chen SY, Edmonds MT, Fuhrer MS. Defects, band bending and ionization rings in MoS 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:174002. [PMID: 35081526 DOI: 10.1088/1361-648x/ac4f1d] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Accepted: 01/26/2022] [Indexed: 06/14/2023]
Abstract
Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a combination of scanning tunnelling microscopy and STS to study embedded sulphur vacancies in bulk MoS2crystals. We observe spectroscopic features dispersing in real space and in energy, which we interpret as tip position- and bias-dependent ionization of the sulphur vacancy donor due to tip induced band bending. The observations indicate that care must be taken in interpreting defect spectra as reflecting in-gap density of states, and may explain discrepancies in the literature.
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Affiliation(s)
- Iolanda Di Bernardo
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, 3800, VIC, Australia
- School of Physics and Astronomy, Monash University, Clayton, 3800, VIC, Australia
| | - James Blyth
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, 3800, VIC, Australia
- School of Physics and Astronomy, Monash University, Clayton, 3800, VIC, Australia
| | - Liam Watson
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, 3800, VIC, Australia
- School of Physics and Astronomy, Monash University, Clayton, 3800, VIC, Australia
| | - Kaijian Xing
- School of Physics and Astronomy, Monash University, Clayton, 3800, VIC, Australia
| | - Yi-Hsun Chen
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, 3800, VIC, Australia
- School of Physics and Astronomy, Monash University, Clayton, 3800, VIC, Australia
| | - Shao-Yu Chen
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, 3800, VIC, Australia
- School of Physics and Astronomy, Monash University, Clayton, 3800, VIC, Australia
| | - Mark T Edmonds
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, 3800, VIC, Australia
- School of Physics and Astronomy, Monash University, Clayton, 3800, VIC, Australia
- Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia
| | - Michael S Fuhrer
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, 3800, VIC, Australia
- School of Physics and Astronomy, Monash University, Clayton, 3800, VIC, Australia
- Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia
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Chen P, Pan J, Gao W, Wan B, Kong X, Cheng Y, Liu K, Du S, Ji W, Pan C, Wang ZL. Anisotropic Carrier Mobility from 2H WSe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108615. [PMID: 34859917 DOI: 10.1002/adma.202108615] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Revised: 12/01/2021] [Indexed: 06/13/2023]
Abstract
Transition metal dichalcogenides (TMDCs) with 2H phase are expected to be building blocks in next-generation electronics; however, they suffer from electrical anisotropy, which is the basics for multi-terminal artificial synaptic devices, digital inverters, and anisotropic memtransistors, which are highly desired in neuromorphic computing. Herein, the anisotropic carrier mobility from 2H WSe2 is reported, where the anisotropic degree of carrier mobility spans from 0.16 to 0.95 for various WSe2 field-effect transistors under a gate voltage of -60 V. Phonon scattering, impurity ions scattering, and defect scattering are excluded for anisotropic mobility. An intrinsic screening layer is proposed and confirmed by Z-contrast scanning transmission electron microscopy (STEM) imaging to respond to the electrical anisotropy. Seven types of intrinsic screening layers are created and calculated by density functional theory to evaluate the modulated electronic structures, effective masses, and scattering intensities, resulting in anisotropic mobility. The discovery of anisotropic carrier mobility from 2H WSe2 provides a degree of freedom for adjusting the physical properties of 2H TMDCs and fertile ground for exploring and integrating TMDC electronic transistors with better performance along the direction of high mobility.
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Affiliation(s)
- Ping Chen
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jinbo Pan
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Wenchao Gao
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Bensong Wan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Xianghua Kong
- Centre for the Physics of Materials and Department of Physics, McGill University, Montreal, QC, H3A 2T8, Canada
| | - Yang Cheng
- State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, School of Physics, Peking University, Beijing, 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, School of Physics, Peking University, Beijing, 100871, China
| | - Shixuan Du
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
| | - Caofeng Pan
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhong Lin Wang
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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40
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Yang W, Huang T, He J, Zhang S, Yang Y, Liu W, Ge X, Zhang R, Qiu M, Sang Y, Wang X, Zhou X, Li T, Liu C, Dai N, Chen X, Fan Z, Shen G. Monolayer WS 2 Lateral Homosuperlattices with Two-dimensional Periodic Localized Photoluminescence. ACS NANO 2022; 16:597-603. [PMID: 34919386 DOI: 10.1021/acsnano.1c07803] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Homojunctions and homosuperlattices are essential structures and have been widely explored for use in advanced electronic and optoelectronic devices. However, artificially manipulating crystalline phases in two-dimensional (2D) monolayers is still challenging, especially when attempting to engineer lateral homogeneous junctions in a single monolayer of transition metal dichalcogenides (TMDs). Herein, we demonstrate a lateral homosuperlattice (MLHS) with alternating 1T and 2H domains in a 2D WS2 monolayer plane. In MLHSs, the 2H domains, which are laterally localized and isolated by potential wells, manifest junction interfaces and irradiated photoluminescence (PL) with a lateral periodic distribution in the two-dimensional plane. The studies on MLHSs here can provide further understanding of lateral homojunctions and homosuperlattices in a monolayer plane, providing an alternative route to modulate optical and electronic behaviors in TMD monolayers.
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Affiliation(s)
- Wanli Yang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tiantian Huang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Junbo He
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Shuaijun Zhang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yan Yang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Weiming Liu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xun Ge
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Rui Zhang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Mengxia Qiu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yuxiang Sang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xingjun Wang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xiaohao Zhou
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Tianxin Li
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Congfeng Liu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Ning Dai
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xin Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong SAR, China
| | - Guozhen Shen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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41
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Hayashi K, Kataoka M, Jippo H, Yamaguchi J, Ohfuchi M, Sato S. Highly Sensitive NO 2 Detection by TVS-Grown Multilayer MoS 2 Films. ACS OMEGA 2022; 7:1851-1860. [PMID: 35071877 PMCID: PMC8771694 DOI: 10.1021/acsomega.1c05113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Accepted: 11/25/2021] [Indexed: 06/14/2023]
Abstract
Two-dimensional layered materials have been investigated for sensor applications over the last decade due to their very high specific surface area and excellent electrical characteristics. Although grain boundaries are inevitably present in polycrystalline-layered materials used for real applications, few studies have investigated their effects on sensing properties. In this study, we demonstrate the growth of two distinct MoS2 films that differ in grain size by means of chemical vapor deposition (CVD) and thermal vapor sulfurization (TVS) methods. Transistor-based sensors are fabricated using these films, and their NO2 sensing properties are evaluated. The adsorption behavior of NO2 on MoS2 is considered in terms of the Langmuir isotherm, and the experimental results can be well fitted by the equation. The CVD-grown film exhibits electrical properties 1-2 orders of magnitude superior to those of the TVS-grown one, which is attributed to the large grain size of the CVD-grown film. In contrast, the sensitivity to NO2 is unexpectedly found to be higher in the TVS-grown film and is of the same order of a previously reported record value. Transmission electron microscopy observations suggest that the TVS-grown film consists of multiple rotationally oriented grains that are connected by mirror twin grain boundaries. Theoretical calculation results reveal that the adsorption of NO2 on the grain boundary that we modeled is equal to that on the ideal basal plane surface of MoS2. In addition, the porous structure in the TVS-grown film may also contribute to enhancing the sensor response to NO2. This study suggests that a highly sensitive MoS2 sensor can also be fabricated by using a polycrystalline film with small grain size, which can possibly be applied to other two-dimensional materials.
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Affiliation(s)
- Kenjiro Hayashi
- Fujitsu
Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
- Fujitsu
Limited, 4-1-1 Kamiodanaka,
Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
| | - Masako Kataoka
- Fujitsu
Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
| | - Hideyuki Jippo
- Fujitsu
Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
- Fujitsu
Limited, 4-1-1 Kamiodanaka,
Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
| | - Junichi Yamaguchi
- Fujitsu
Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
- Fujitsu
Limited, 4-1-1 Kamiodanaka,
Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
| | - Mari Ohfuchi
- Fujitsu
Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
- Fujitsu
Limited, 4-1-1 Kamiodanaka,
Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
| | - Shintaro Sato
- Fujitsu
Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
- Fujitsu
Limited, 4-1-1 Kamiodanaka,
Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
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Liaqat A, Yin Y, Hussain S, Wen W, Wu J, Guo Y, Dang C, Ho CH, Liu Z, Yu P, Cheng Z, Xie L. An all two-dimensional vertical heterostructure graphene/CuInP 2S 6/MoS 2for negative capacitance field effect transistor. NANOTECHNOLOGY 2021; 33:125703. [PMID: 34874305 DOI: 10.1088/1361-6528/ac4063] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2021] [Accepted: 12/06/2021] [Indexed: 06/13/2023]
Abstract
As scaling down the size of metal oxide semiconductor field-effect transistors (FETs), power dissipation has become a major challenge. Lowering down the sub-threshold swing (SS) is known as an effective technique to decrease the operating voltage of FETs and hence lower down the power consumption. However, the Boltzmann distribution of electrons (so-called 'Boltzmann tyranny') implements a physical limit to the SS value. Use of negative capacitance (NC) effect has enabled a new path to achieve a low SS below the Boltzmann limit (60 mV dec-1at room temperature). In this work, we have demonstrated a NC-FET from an all two-dimensional (2D) metal ferroelectric semiconductor (MFS) vertical heterostructure: Graphene/CuInP2S6/MoS2. The negative capacitance from the ferroelectric CuInP2S6has enabled the breaking of the 'Boltzmann tyranny'. The heterostructure based device has shown steep slopes switching below 60 mV dec-1(lowest to < 10 mV dec-1) over 3 orders of source-drain current, which provides an avenue for all 2D material based steep slope FETs.
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Affiliation(s)
- Adeel Liaqat
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yiheng Yin
- School of Electrical Engineering and Automation, Wuhan University, Wuhan 430072, People's Republic of China
| | - Sabir Hussain
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wen Wen
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Yuzheng Guo
- School of Electrical Engineering and Automation, Wuhan University, Wuhan 430072, People's Republic of China
| | - Chunhe Dang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China
| | - Zheng Liu
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies School of Materials Science and Engineering Sun Yat-sen University Guangzhou 510275, People's Republic of China
| | - Zhihai Cheng
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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43
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Kajale SN, Yadav S, Cai Y, Joy B, Sarkar D. 2D material based field effect transistors and nanoelectromechanical systems for sensing applications. iScience 2021; 24:103513. [PMID: 34934930 DOI: 10.1016/j.isci.2021.103513] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022] Open
Abstract
Sensors are ubiquitous in modern society because of their wide applications in healthcare, security, forensic industries as well as environmental protection. Specifically, sensors which can be microfabricated employing very-large-scale-integration (VLSI) compatible microfabrication techniques are particularly desirable. This is because they can provide several advantages: small size, low cost, and possibility of mass fabrication. 2D materials are a promising building block for such sensors. Their atomically thin nature, flat surfaces and ability to form van der Waals hetero junctions opens up the pathway for versatile functionalities. Here, we review 2D material-based field-effect-transistors (FETs) and nano-electro-mechanical systems (NEMs) for applications in detecting different gases, chemicals, and biomolecules. We will provide insights into the unique advantages of these materials for these sensing applications and discuss the fabrication methods, detection schemes and performance pertaining to these technologies. Finally, we will discuss the current challenges and prospects for this field.
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Affiliation(s)
- Shivam Nitin Kajale
- Media Arts and Science, Massachusetts Institute of Technology, Cambridge, MA 02142, USA
| | - Shubham Yadav
- Media Arts and Science, Massachusetts Institute of Technology, Cambridge, MA 02142, USA
| | - Yubin Cai
- Media Arts and Science, Massachusetts Institute of Technology, Cambridge, MA 02142, USA
| | - Baju Joy
- Media Arts and Science, Massachusetts Institute of Technology, Cambridge, MA 02142, USA
| | - Deblina Sarkar
- Media Arts and Science, Massachusetts Institute of Technology, Cambridge, MA 02142, USA
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44
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Li X, Li B, Lei J, Bets KV, Sang X, Okogbue E, Liu Y, Unocic RR, Yakobson BI, Hone J, Harutyunyan AR. Nickel particle-enabled width-controlled growth of bilayer molybdenum disulfide nanoribbons. SCIENCE ADVANCES 2021; 7:eabk1892. [PMID: 34890223 PMCID: PMC8664269 DOI: 10.1126/sciadv.abk1892] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2021] [Accepted: 10/25/2021] [Indexed: 05/19/2023]
Abstract
Transition metal dichalcogenides exhibit a variety of electronic behaviors depending on the number of layers and width. Therefore, developing facile methods for their controllable synthesis is of central importance. We found that nickel nanoparticles promote both heterogeneous nucleation of the first layer of molybdenum disulfide and simultaneously catalyzes homoepitaxial tip growth of a second layer via a vapor-liquid-solid (VLS) mechanism, resulting in bilayer nanoribbons with width controlled by the nanoparticle diameter. Simulations further confirm the VLS growth mechanism toward nanoribbons and its orders of magnitude higher growth speed compared to the conventional noncatalytic growth of flakes. Width-dependent Coulomb blockade oscillation observed in the transfer characteristics of the nanoribbons at temperatures up to 60 K evidences the value of this proposed synthesis strategy for future nanoelectronics.
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Affiliation(s)
- Xufan Li
- Honda Research Institute USA Inc., San Jose, CA 95134, USA
| | - Baichang Li
- Mechanical Engineering Department, Columbia University, New York, NY 10025, USA
| | - Jincheng Lei
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX 77005, USA
| | - Ksenia V. Bets
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX 77005, USA
| | - Xiahan Sang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | | | - Yang Liu
- Mechanical Engineering Department, Columbia University, New York, NY 10025, USA
| | - Raymond R. Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Boris I. Yakobson
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX 77005, USA
| | - James Hone
- Mechanical Engineering Department, Columbia University, New York, NY 10025, USA
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45
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Wu W, Li D, Xu Y, Zeng XC. Two-Dimensional GeC 2 with Tunable Electronic and Carrier Transport Properties and a High Current ON/OFF Ratio. J Phys Chem Lett 2021; 12:11488-11496. [PMID: 34793176 DOI: 10.1021/acs.jpclett.1c03477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In this study, we present that 2D tetrahex-GeC2 materials possess novel electronic and carrier transport properties based on density functional theory computations combined with the nonequilibrium Green's function method. We show that under the 4% (-4%) in-plane expansion (compression) along the a-direction (b-direction) of the tetrahex-GeC2 monolayer, the bandgap can be enlarged to a desirable 1.26 eV (1.32 eV), close to that of silicon. The carrier transport properties of both the sub-10 nm tetrahex-GeC2 monolayer and the bilayer show strong anisotropy within the bias from -1 to 1 V. The current ON (a-direction)/OFF (b-direction) ratio amounts to 105 for the tetrahex-GeC2 monolayer. A striking negative differential conductance arises with the maximum Ipeak/Ivalley on the order of 104 under the 4% uniaxial expansion along the b-direction of the tetrahex-GeC2 monolayer. Overall, the 2D tetrahex-GeC2 monolayer and bilayer possess highly tunable electronic and carrier transport properties under uniaxial strain, which can be exploited for potential applications in nanoelectronics.
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Affiliation(s)
- Wenjun Wu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu China
| | - Dongze Li
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu China
| | - Yuehua Xu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu China
| | - Xiao Cheng Zeng
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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46
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Peng W, Wang H, Lu H, Yin L, Wang Y, Grandidier B, Yang D, Pi X. Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100655. [PMID: 34337855 DOI: 10.1002/smll.202100655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2021] [Revised: 05/18/2021] [Indexed: 06/13/2023]
Abstract
The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.
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Affiliation(s)
- Wenbing Peng
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Haolin Wang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Hui Lu
- Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang, 311215, China
| | - Lei Yin
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Yue Wang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Bruno Grandidier
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, Lille, 59000, France
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
- Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang, 311215, China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
- Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang, 311215, China
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47
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Kim JK, Cho K, Jang J, Baek KY, Kim J, Seo J, Song M, Shin J, Kim J, Parkin SSP, Lee JH, Kang K, Lee T. Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101598. [PMID: 34533851 DOI: 10.1002/adma.202101598] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2021] [Revised: 08/15/2021] [Indexed: 06/13/2023]
Abstract
The controllability of carrier density and major carrier type of transition metal dichalcogenides(TMDCs) is critical for electronic and optoelectronic device applications. To utilize doping in TMDC devices, it is important to understand the role of dopants in charge transport properties of TMDCs. Here, the effects of molecular doping on the charge transport properties of tungsten diselenide (WSe2 ) are investigated using three p-type molecular dopants, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4 -TCNQ), tris(4-bromophenyl)ammoniumyl hexachloroantimonate (magic blue), and molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd-COCF3 )3 ). The temperature-dependent transport measurements show that the dopant counterions on WSe2 surface can induce Coulomb scattering in WSe2 channel and the degree of scattering is significantly dependent on the dopant. Furthermore, the quantitative analysis revealed that the amount of charge transfer between WSe2 and dopants is related to not only doping density, but also the contribution of each dopant ion toward Coulomb scattering. The first-principles density functional theory calculations show that the amount of charge transfer is mainly determined by intrinsic properties of the dopant molecules such as relative frontier orbital positions and their spin configurations. The authors' systematic investigation of the charge transport of doped TMDCs will be directly relevant for pursuing molecular routes for efficient and controllable doping in TMDC nanoelectronic devices.
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Affiliation(s)
- Jae-Keun Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Kyungjune Cho
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Korea
| | - Juntae Jang
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Kyeong-Yoon Baek
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jehyun Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Junseok Seo
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Minwoo Song
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jiwon Shin
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jaeyoung Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Stuart S P Parkin
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Jung-Hoon Lee
- Computational Science Research Center, Korea Institute of Science and Technology, Seoul, 02792, Korea
| | - Keehoon Kang
- Department of Materials Science & Engineering, Yonsei University, Seoul, 03722, Korea
| | - Takhee Lee
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
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48
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Chang H, Wang H, Song KK, Zhong M, Shi LB, Qian P. Origin of phonon-limited mobility in two-dimensional metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:013003. [PMID: 34714257 DOI: 10.1088/1361-648x/ac29e1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Accepted: 09/24/2021] [Indexed: 06/13/2023]
Abstract
Metal dichalcogenides are novel two-dimensional (2D) semiconductors after the discovery of graphene. In this article, phonon-limited mobility for six kinds of 2D semiconductors with the composition of MX2is reviewed, in which M (Cr, Mo and W) is the transition metal, and X (S and Se) is the chalcogen element. The review is divided into three parts. In the first part, we briefly introduce the calculation method of mobility, including the empirical model and Boltzmann transport theory (BTE). The application scope, merits and limitations of these methods are summarized. In the second part, we explore empirical models to calculate the mobility of MX2, including longitudinal acoustic phonon, optical phonon (OP) and polar optical phonon (POP) models. The contribution of multi-valley to mobility is reviewed in the calculation. The differences between static and high-frequency dielectric constants (Δϵ) are only 0.13 and 0.03 for MoS2and WS2. Such a low value indicates that the polarization hardly changes in the external field. So, their mobility is not determined by POP, but by deformation potential models. Different from GaAs, POP scattering plays a decisive role in its mobility. Our investigations also reveal that the scattering from POP cannot be ignored in CrSe2, MoSe2and WSe2. In the third parts, we investigate the mobility of MX2using electron-phonon coupling matrix element, which is based on BTE from the framework of a many-body quantum-field theory. Valence band splitting of MoS2and WS2is induced by spin-orbit coupling effect, which leads to the increase of hole mobility. In particular, we review in detail the theoretical and experimental results of MoS2mobility in recent ten years, and its mobility is also compared with other materials to deepen the understanding.
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Affiliation(s)
- Hao Chang
- College of Physical Science and Technology, Bohai University, Jinzhou 121013, People's Republic of China
| | - Hao Wang
- College of Physical Science and Technology, Bohai University, Jinzhou 121013, People's Republic of China
| | - Ke-Ke Song
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Min Zhong
- Liaoning Key Laboratory of Optoelectronic Functional Materials Testing and Technology, College of Chemical and Material Engineering, Bohai University, Jinzhou 121013, People's Republic of China
| | - Li-Bin Shi
- College of Physical Science and Technology, Bohai University, Jinzhou 121013, People's Republic of China
| | - Ping Qian
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
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49
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Zhang L, Zhong Y, Qian X, Song Q, Zhou J, Li L, Guo L, Chen G, Wang EN. Toward Optimal Heat Transfer of 2D-3D Heterostructures via van der Waals Binding Effects. ACS APPLIED MATERIALS & INTERFACES 2021; 13:46055-46064. [PMID: 34529424 DOI: 10.1021/acsami.1c08131] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials and their heterogeneous integration have enabled promising electronic and photonic applications. However, significant thermal challenges arise due to numerous van der Waals (vdW) interfaces limiting the dissipation of heat generated in the device. In this work, we investigate the vdW binding effect on heat transport through a MoS2-amorphous silica heterostructure. We show using atomistic simulations that the cross-plane thermal conductance starts to saturate with the increase of vdW binding energy, which is attributed to substrate-induced localized phonons. With these atomistic insights, we perform device-level heat transfer optimizations. Accordingly, we identify a regime, characterized by the coupling of in-plane and cross-plane heat transport mediated by vdW binding energy, where maximal heat dissipation in the device is achieved. These results elucidate fundamental heat transport through the vdW heterostructure and provide a pathway toward optimizing thermal management in 2D nanoscale devices.
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Affiliation(s)
- Lenan Zhang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yang Zhong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xin Qian
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Qichen Song
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jiawei Zhou
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Long Li
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Liang Guo
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Gang Chen
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Evelyn N Wang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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50
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Zhan H, Tan X, Xie G, Guo D. Load-dependent energy dissipation induced by the tip-membrane friction on suspended 2D materials. Phys Chem Chem Phys 2021; 23:19819-19826. [PMID: 34525145 DOI: 10.1039/d1cp02610k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
The tip-membrane interface plays a critical role in characterizing the mechanical properties of ultrathin 2D materials by commonly employed nanoindentation based on atomic force microscopy (AFM). However, the reliability of the assumption that the tip-membrane interface remains pinned during nanoindentation remains unclear, which may introduce unignorable uncertainty in evaluating their true mechanical properties. In this work, it is reported that load-dependent frictional behavior would occur on the tip-membrane interface during nanoindentation tests on monolayer and multilayer suspended WS2 and graphene, and the curve hysteresis could be well explained by the stick-slip behavior. Further analyses and finite element simulations demonstrated that the frictional energy dissipation should be mainly attributed to the frictional behavior along the direction parallel to the cantilever beam. Meanwhile, the in-plane membrane stiffness was mainly responsible for the different frictional behavior on monolayer and multilayer 2D materials. Based on these analyses, some suggestions were proposed to help reduce the uncertainty when extracting the mechanical properties of 2D materials. These findings not only facilitate the deep understanding of the origin of the curve hysteresis during nanoindentation, but also help to evaluate the mechanical properties of 2D materials in a more reliable way.
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Affiliation(s)
- Hao Zhan
- State Key Laboratory, Tsinghua University, Beijing, China.
| | - Xinfeng Tan
- State Key Laboratory, Tsinghua University, Beijing, China.
| | - Guoxin Xie
- State Key Laboratory, Tsinghua University, Beijing, China.
| | - Dan Guo
- State Key Laboratory, Tsinghua University, Beijing, China.
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