1
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Hao H, Li K, Ji X, Zhao X, Tong L, Zhang J. Chiral Stacking Identification of Two-Dimensional Triclinic Crystals Enabled by Machine Learning. ACS NANO 2024; 18:13858-13865. [PMID: 38743777 DOI: 10.1021/acsnano.4c02898] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
Chiral materials possess broken inversion and mirror symmetry and show great potential in the application of next-generation optic, electronic, and spintronic devices. Two-dimensional (2D) chiral crystals have planar chirality, which is nonsuperimposable on their 2D enantiomers by any rotation about the axis perpendicular to the substrate. The degree of freedom to construct vertical stacking of 2D monolayer enantiomers offers the possibility of chiral manipulation for designed properties by creating multilayers with either a racemic or enantiomerically pure stacking order. However, the rapid recognition of the relative proportion of two enantiomers becomes demanding due to the complexity of stacking orders of 2D chiral crystals. Here, we report the unambiguous identification of racemic and enantiomerically pure stackings for layered ReSe2 and ReS2 using circular polarized Raman spectroscopy. The chiral Raman response is successfully manipulated by the enantiomer proportion, and the stacking orders of multilayer ReSe2 and ReS2 can be completely clarified with the help of second harmonic generation and scanning transmission electron microscopy measurements. Finally, we trained an artificial intelligent Spectra Classification Assistant to predict the chirality and the complete crystallographic structures of multilayer ReSe2 from a single circular polarized Raman spectrum with the accuracy reaching 0.9417 ± 0.0059.
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Affiliation(s)
- He Hao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Kangshu Li
- School of Materials Science and Engineering, Peking University, 100871 Beijing, China
| | - Xujing Ji
- School of Materials Science and Engineering, Peking University, 100871 Beijing, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, 100871 Beijing, China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
- School of Advanced Materials, Peking University Shenzhen Graduate School, 518055 Shenzhen, Guangdong, China
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2
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Xie Y, Zhang Z, Meng F, Huo S, Hu X, Niu P, Wu E. Anisotropic sensing based on single ReS 2flake for VOCs discrimination. NANOTECHNOLOGY 2024; 35:305203. [PMID: 38651768 DOI: 10.1088/1361-6528/ad41da] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 04/08/2024] [Indexed: 04/25/2024]
Abstract
Selective and sensitive detection of volatile organic compounds (VOCs) holds paramount importance in real-world applications. This study proposes an innovative approach utilizing a single ReS2field-effect transistor (FET) characterized by distinct in-plane anisotropy, specifically tailored for VOC recognition. The unique responses of ReS2, endowed with robust in-plane anisotropic properties, demonstrate significant difference along thea-axis andb-axis directions when exposed to four kinds of VOCs: acetone, methanol, ethanol, and IPA. Remarkably, the responses of ReS2were significantly magnified under ultraviolet (UV) illumination, particularly in the case of acetone, where the response amplified by 10-15 times and the detection limit decreasing from 70 to 4 ppm compared to the dark conditions. Exploiting the discernible variances in responses along thea-axis andb-axis under both UV and dark conditions, the data points of acetone, ethanol, methanol and IPA gases were clearly separated in the principal component space without any overlap through principal component analysis, indicating that the single ReS2FET has a high ability to distinguish various gas species. The exploration of anisotropic sensing materials and light excitation strategies can be applied to a broad range of sensing platforms based on two-dimensional materials for practical applications.
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Affiliation(s)
- Yuan Xie
- School of Electronics and Information Engineering, Tiangong University, No. 399 BinShuiXi Road, Tianjin, 300387, People's Republic of China
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Zhe Zhang
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Fanying Meng
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Shida Huo
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Xiaodong Hu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Pingjuan Niu
- School of Electronics and Information Engineering, Tiangong University, No. 399 BinShuiXi Road, Tianjin, 300387, People's Republic of China
| | - Enxiu Wu
- State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
- State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem And Information Technology, No. 865 Changning Road, Shanghai, 200050, People's Republic of China
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3
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Zhou Y, Zhou X, Yu XL, Liang Z, Zhao X, Wang T, Miao J, Chen X. Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries. Nat Commun 2024; 15:501. [PMID: 38218730 PMCID: PMC10787835 DOI: 10.1038/s41467-024-44792-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 01/04/2024] [Indexed: 01/15/2024] Open
Abstract
The photovoltaic effect lies at the heart of eco-friendly energy harvesting. However, the conversion efficiency of traditional photovoltaic effect utilizing the built-in electric effect in p-n junctions is restricted by the Shockley-Queisser limit. Alternatively, intrinsic/bulk photovoltaic effect (IPVE/BPVE), a second-order nonlinear optoelectronic effect arising from the broken inversion symmetry of crystalline structure, can overcome this theoretical limit. Here, we uncover giant and robust IPVE in one-dimensional (1D) van der Waals (vdW) grain boundaries (GBs) in a layered semiconductor, ReS2. The IPVE-induced photocurrent densities in vdW GBs are among the highest reported values compared with all kinds of material platforms. Furthermore, the IPVE-induced photocurrent is gate-tunable with a polarization-independent component along the GBs, which is preferred for energy harvesting. The observed IPVE in vdW GBs demonstrates a promising mechanism for emerging optoelectronics applications.
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Affiliation(s)
- Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Xin Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Zihan Liang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
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4
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van der Laan M, Heemskerk E, Kienhuis F, Diepeveen N, Poonia D, Kinge S, Dang MT, Dinh VA, Siebbeles LDA, Isaeva A, van de Groep J, Schall P. Stacking-Order-Dependent Excitonic Properties Reveal Interlayer Interactions in Bulk ReS 2. ACS PHOTONICS 2023; 10:3115-3123. [PMID: 37743944 PMCID: PMC10515696 DOI: 10.1021/acsphotonics.3c00477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2023] [Indexed: 09/26/2023]
Abstract
Rhenium disulfide, a member of the transition metal dichalcogenide family of semiconducting materials, is unique among 2D van der Waals materials due to its anisotropy and, albeit weak, interlayer interactions, confining excitons within single atomic layers and leading to monolayer-like excitonic properties even in bulk crystals. While recent work has established the existence of two stacking modes in bulk, AA and AB, the influence of the different interlayer coupling on the excitonic properties has been poorly explored. Here, we use polarization-dependent optical measurements to elucidate the nature of excitons in AA and AB-stacked rhenium disulfide to obtain insight into the effect of interlayer interactions. We combine polarization-dependent Raman with low-temperature photoluminescence and reflection spectroscopy to show that, while the similar polarization dependence of both stacking orders indicates similar excitonic alignments within the crystal planes, differences in peak width, position, and degree of anisotropy reveal a different degree of interlayer coupling. DFT calculations confirm the very similar band structure of the two stacking orders while revealing a change of the spin-split states at the top of the valence band to possibly underlie their different exciton binding energies. These results suggest that the excitonic properties are largely determined by in-plane interactions, however, strongly modified by the interlayer coupling. These modifications are stronger than those in other 2D semiconductors, making ReS2 an excellent platform for investigating stacking as a tuning parameter for 2D materials. Furthermore, the optical anisotropy makes this material an interesting candidate for polarization-sensitive applications such as photodetectors and polarimetry.
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Affiliation(s)
- Marco van der Laan
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Edwin Heemskerk
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Floris Kienhuis
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Nella Diepeveen
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Deepika Poonia
- Optoelectronic
Materials Section, Department of Chemical Engineering, Delft University of Technology, 2629 HZ Delft, The Netherlands
| | - Sachin Kinge
- Optoelectronic
Materials Section, Department of Chemical Engineering, Delft University of Technology, 2629 HZ Delft, The Netherlands
- Materials
Research & Development, Toyota Motor
Europe, B1930 Zaventem, Belgium
| | - Minh Triet Dang
- School
of Education, Can Tho University, 3-2 Road, Can Tho City 900000, Vietnam
| | - Van An Dinh
- Department
of Precision Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Laurens D. A. Siebbeles
- Optoelectronic
Materials Section, Department of Chemical Engineering, Delft University of Technology, 2629 HZ Delft, The Netherlands
| | - Anna Isaeva
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
- Leibniz
IFW Dresden, Helmholtzstr.
20, D-01069 Dresden, Germany
| | - Jorik van de Groep
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Peter Schall
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
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5
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Luo W, Oyedele AD, Mao N, Puretzky A, Xiao K, Liang L, Ling X. Excitation-Dependent Anisotropic Raman Response of Atomically Thin Pentagonal PdSe 2. ACS PHYSICAL CHEMISTRY AU 2022; 2:482-489. [PMID: 36465836 PMCID: PMC9706783 DOI: 10.1021/acsphyschemau.2c00007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2022] [Revised: 07/15/2022] [Accepted: 07/22/2022] [Indexed: 06/17/2023]
Abstract
The group-10 noble-metal dichalcogenides have recently emerged as a promising group of two-dimensional materials due to their unique crystal structures and fascinating physical properties. In this work, the resonance enhancement of the interlayer breathing mode (B1) and intralayer Ag 1 and Ag 3 modes in atomically thin pentagonal PdSe2 were studied using angle-resolved polarized Raman spectroscopy with 13 excitation wavelengths. Under the excitation energies of 2.33, 2.38, and 2.41 eV, the Raman intensities of both the low-frequency breathing mode B1 and high-frequency mode Ag 1 of all the thicknesses are the strongest when the incident polarization is parallel to the a axis of PdSe2, serving as a fast identification of the crystal orientation of few-layer PdSe2. We demonstrated that the intensities of B1, Ag 1, and Ag 3 modes are the strongest with the excitation energies between 2.18 and 2.38 eV when the incident polarization is parallel to PdSe2 a axis, which arises from the resonance enhancement caused by the absorption. Our investigation reveals the underlying interplay of the anisotropic electron-phonon and electron-photon interactions in the Raman scattering process of atomically thin PdSe2. It paves the way for future applications on PdSe2-based optoelectronics.
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Affiliation(s)
- Weijun Luo
- Department
of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Akinola D. Oyedele
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
- Bredesen
Center for Interdisciplinary Research and Graduate Education, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Nannan Mao
- Department
of Chemistry, Boston University, Boston, Massachusetts 02215, United States
- Department
of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Alexander Puretzky
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xi Ling
- Department
of Chemistry, Boston University, Boston, Massachusetts 02215, United States
- Division
of Materials Science and Engineering, Boston
University, Boston, Massachusetts 02215, United States
- The Photonics
Center, Boston University, Boston, Massachusetts 02215, United States
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6
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Dou W, Zhang L, Song B, Hua C, Wu M, Niu T, Zhou M. Vacancy-Regulated Charge Carrier Dynamics and Suppressed Nonradiative Recombination in Two-Dimensional ReX 2 (X = S, Se). J Phys Chem Lett 2022; 13:10656-10665. [PMID: 36354193 DOI: 10.1021/acs.jpclett.2c02796] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Point defects in semiconductors usually act as nonradiative charge carrier recombination centers, which severely limit the performance of optoelectronic devices. In this work, by combining time-domain density functional theory with nonadiabatic molecular dynamics simulations, we demonstrate suppressed nonradiative charge carrier recombination and prolonged carrier lifetime in two-dimensional (2D) ReX2 (X = S, Se) with S/Se vacancies. In particular, a S vacancy introduces a shallow hole trap state in ReS2, while a Se vacancy introduces both hole and electron trap states in ReSe2. Photoexcited electrons and holes can be rapidly captured by these defect states, while the release process is slow, which contributes to an elongated photocarrier lifetime. The suppressed charge carrier recombination lies in the vacancy-induced low-frequency phonon modes that weaken electron-phonon coupling, as well as the reduced overlap between electron and hole wave functions that decreases nonadiabatic coupling. This work provides physical insights into the charge carrier dynamics of 2D ReX2, which may stimulate considerable interest in using defect engineering for future optoelectronic nanodevices.
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Affiliation(s)
- Wenzhen Dou
- School of Physics, Beihang University, Beijing100191, China
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou310023, China
| | - Ling Zhang
- School of Physics, Beihang University, Beijing100191, China
| | - Biyu Song
- School of Physics, Beihang University, Beijing100191, China
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou310023, China
| | - Chenqiang Hua
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou310023, China
| | - Meimei Wu
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou310023, China
| | - Tianchao Niu
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou310023, China
| | - Miao Zhou
- School of Physics, Beihang University, Beijing100191, China
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou310023, China
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7
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Yu J, Li Z, Jiang J, Liu W, Guo S, Liang Y, Zhong B, Wang Y, Zou M. Anisotropy study of phonon modes in ReS2 flakes by polarized temperature-dependent Raman spectroscopy. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.140132] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2022]
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8
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Usman A, Adel Aly M, Masenda H, Thompson JJP, Gunasekera SM, Mucha-Kruczyński M, Brem S, Malic E, Koch M. Enhanced excitonic features in an anisotropic ReS 2/WSe 2 heterostructure. NANOSCALE 2022; 14:10851-10861. [PMID: 35838641 DOI: 10.1039/d2nr01973f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) semiconductors have opened new horizons for future optoelectronic applications through efficient light-matter and many-body interactions at quantum level. Anisotropic 2D materials like rhenium disulphide (ReS2) present a new class of materials with polarized excitonic resonances. Here, we demonstrate a WSe2/ReS2 heterostructure which exhibits a significant photoluminescence quenching at room temperature as well as at low temperatures. This indicates an efficient charge transfer due to the electron-hole exchange interaction. The band alignment of two materials suggests that electrons optically injected into WSe2 are transferred to ReS2. Polarization resolved luminescence measurements reveal two additional polarization-sensitive exciton peaks in ReS2 in addition to the two conventional exciton resonances X1 and X2. Furthermore, for ReS2 we observe two charged excitons (trions) with binding energies of 18 meV and 15 meV, respectively. The bi-excitons of WSe2 become polarization sensitive and inherit polarizing properties from the underlying ReS2 layers, which act as patterned substrates for top layer. Overall, our findings provide a better understanding of optical signatures in 2D anisotropic materials.
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Affiliation(s)
- Arslan Usman
- Department of Physics and Materials Sciences Centre, Philipps-Universität Marburg, Marburg 35032, Germany.
- Department of Physics, COMSATS University Islamabad-Lahore-Campus, Pakistan
| | - M Adel Aly
- Department of Physics and Materials Sciences Centre, Philipps-Universität Marburg, Marburg 35032, Germany.
- Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566, Egypt
| | - Hilary Masenda
- Department of Physics and Materials Sciences Centre, Philipps-Universität Marburg, Marburg 35032, Germany.
- School of Physics, University of the Witwatersrand, 2050 Johannesburg, South Africa
| | - Joshua J P Thompson
- Department of Physics and Materials Sciences Centre, Philipps-Universität Marburg, Marburg 35032, Germany.
| | | | - Marcin Mucha-Kruczyński
- Department of Physics, University of Bath, Claverton Down, Bath BA2 7AY, UK
- Centre for Nanoscience and Nanotechnology, University of Bath, Claverton Down, Bath BA2 7AY, UK
| | - Samuel Brem
- Department of Physics and Materials Sciences Centre, Philipps-Universität Marburg, Marburg 35032, Germany.
| | - Ermin Malic
- Department of Physics and Materials Sciences Centre, Philipps-Universität Marburg, Marburg 35032, Germany.
| | - Martin Koch
- Department of Physics and Materials Sciences Centre, Philipps-Universität Marburg, Marburg 35032, Germany.
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9
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Wu S, Yao J, Gao J, Shan Y, Liu L. The exchange between anions and cations induced by coupled plasma and thermal annealing treatment for room-temperature ferromagnetism. Phys Chem Chem Phys 2022; 24:7001-7006. [PMID: 35254376 DOI: 10.1039/d2cp00379a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) materials, with outstanding magnetic properties at room temperature, are highly desirable for the future spintronic and nanoscale electronic industry. However, most of the 2D systems are not of magnetic nature due to thermal fluctuations. Herein, we propose a novel strategy to induce robust room-temperature ferromagnetism in the originally nonmagnetic 2D ReS2 by the exchange between anions and cations. The vacancies are created by argon plasma treatment, which lowers the formation energy of point defects. The subsequent annealing facilitates the movement of the cations into the anion sites, giving rise to antisite defects, which leads to a significant increase in the magnetization. First-principles calculations demonstrate that the point defect with respect to the antisite substitution from Re to S is responsible for the extraordinary room-temperature ferromagnetism. This work opens a new door to the design of spin electronic structures by controllable antisite defects.
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Affiliation(s)
- Shuyi Wu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China.
| | - Jinlei Yao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China.
| | - Ju Gao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China. .,School for Optoelectronic Engineering, Zaozhuang University, Shandong 277160, People's Republic of China
| | - Yun Shan
- Key Laboratory of Advanced Functional Materials of Nanjing, Nanjing Xiaozhuang University, Nanjing 211171, People's Republic of China.
| | - Lizhe Liu
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093, P. R. China
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10
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Quantum interference directed chiral raman scattering in two-dimensional enantiomers. Nat Commun 2022; 13:1254. [PMID: 35273159 PMCID: PMC8913836 DOI: 10.1038/s41467-022-28877-6] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/30/2021] [Accepted: 02/16/2022] [Indexed: 12/04/2022] Open
Abstract
Raman scattering spectroscopy has been a necessary and accurate tool not only for characterizing lattice structure, but also for probing electron-photon and electron-phonon interactions. In the quantum picture, electrons at ground states can be excited to intermediate energy levels by photons at different k-points in the Brillouin zone, then couple to phonons and emit photons with changed energies. The elementary Raman processes via all possible pathways can interfere with each other, giving rise to intriguing scattering effects. Here we report that quantum interference can lead to significant chiral Raman response in monolayer transitional metal dichalcogenide with triclinic symmetry. Large circular intensity difference observed for monolayer rhenium dichalcogenide originates from inter-k interference of Raman scattering excited by circularly polarized light with opposite helicities. Our results reveal chiral Raman spectra as a new manifestation of quantum interference in Raman scattering process, and may inspire induction of chiral optical response in other materials. Quantum interference among elementary Raman processes has only been observed in few materials under specific excitation configurations. Here, the authors show that quantum interference can lead to significant chiral Raman response in a monolayer material of transitional metal dichalcogenide with triclinic symmetry.
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11
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Wu R, Qi M, Zhao Q, Huang Y, Zhou Y, Xu X. Anomalous polarization pattern evolution of Raman modes in few-layer ReS 2 by angle-resolved polarized Raman spectroscopy. NANOSCALE 2022; 14:1896-1905. [PMID: 35044412 DOI: 10.1039/d1nr06733h] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Low-symmetry of ReS2 has not only in-plane but also out-of-plane anisotropic light scattering, which is complicated, yet interesting with intrinsic strong electron-phonon coupling. In such a case, the Raman tensor also gets sophisticated with nine non-zero elements, which is layer-dependent for different Raman modes. Herein, we systematically investigated the polarization pattern evolution of both in-plane and out-of-plane Raman modes of few-layer ReS2 by angle-resolved polarized Raman spectroscopy. We found that in-plane Raman modes with less layer-dependence could be used to determine the crystal orientation (Re-chain direction) due to the weak electron-phonon interaction between layers. However, the out-of-plane and mixed vibration Raman modes demonstrate much evident layer-dependence due to the obvious electron-phonon interaction between layers. As such, the polarization patterns for the out-of-plane vibration Raman modes are distorted with layers in not only petal types but also maximum Raman intensity directions. This distortion is mainly due to the phase difference between Raman elements, which are complex values due to the near bandgap excitation laser. The results reveal that deep insights into anisotropy in low-symmetry two-dimensional materials could afford not only rich physics but also potential polarized optoelectronic devices.
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Affiliation(s)
- Ruowei Wu
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China.
| | - Mei Qi
- School of Information Science and Technology, Northwest University, Xi'an 710127, China
| | - Qiyi Zhao
- School of Science, Xi'an University of Posts & Telecommunications, Xi'an 710121, China
| | - Yuanyuan Huang
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China.
| | - Yixuan Zhou
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China.
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, State Key Laboratory of Photon-Technology in Western China Energy, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China.
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12
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Pimenta MA, Resende GC, Ribeiro HB, Carvalho BR. Polarized Raman spectroscopy in low-symmetry 2D materials: angle-resolved experiments and complex number tensor elements. Phys Chem Chem Phys 2021; 23:27103-27123. [PMID: 34859800 DOI: 10.1039/d1cp03626b] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
In this perspective review, we discuss the power of polarized Raman spectroscopy to study optically anisotropic 2D materials, belonging to the orthorhombic, monoclinic and triclinic crystal families. We start by showing that the polarization dependence of the peak intensities is described by the Raman tensor that is unique for each phonon mode, and then we discuss how to determine the tensor elements from the angle-resolved polarized measurements by analyzing the intensities in both the parallel- and cross-polarized scattering configurations. We present specific examples of orthorhombic black phosphorus and monoclinic 1T'-MoTe2, where the Raman tensors have null elements and their principal axes coincide with the crystallographic ones, followed by a discussion on the results for triclinic ReS2 and ReSe2, where the axes of the Raman tensor do not coincide with the crystallographic axes and all elements are non-zero. We show that the Raman tensor elements are, in general, given by complex numbers and that phase differences between tensor elements are needed to describe the experimental results. We discuss the dependence of the Raman tensors on the excitation laser energy and thickness of the sample within the framework of the quantum model for the Raman intensities. We show that the wavevector dependence of the electron-phonon interaction is essential for explaining the distinct Raman tensor for each phonon mode. Finally, we close with our concluding remarks and perspectives to be explored using angle-resolved polarized Raman spectroscopy in optically anisotropic 2D materials.
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Affiliation(s)
- Marcos A Pimenta
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970, Brazil.
| | - Geovani C Resende
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970, Brazil.
| | - Henrique B Ribeiro
- Department of Applied Physics, Stanford University, Stanford, California, 94305, USA
| | - Bruno R Carvalho
- Departamento de Física, Universidade Federal do Rio Grande do Norte, Natal, Rio Grande do Norte 59078-970, Brazil.
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13
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Zulkefli A, Mukherjee B, Sahara R, Hayakawa R, Iwasaki T, Wakayama Y, Nakaharai S. Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS 2-FETs under Light-Assisted and Gate-Bias Tunable Operation. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43030-43038. [PMID: 34463490 DOI: 10.1021/acsami.1c10054] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Using a single-device two-dimensional (2D) rhenium disulfide (ReS2) field-effect transistor (FET) with enhanced gas species selectivity by light illumination, we reported a selective and sensitive detection of volatile organic compound (VOC) gases. 2D materials have the advantage of a high surface-area-to-volume ratio for high sensitivity to molecules attached to the surface and tunable carrier concentration through field-effect control from the back-gate of the channel, while keeping the top surface open to the air for chemical sensing. In addition to these advantages, ReS2 has a direct band gap also in multilayer cases, which sets it apart from other transition-metal dichalcogenides (TMDCs). We take advantage of the effective response of ReS2 to light illumination to improve the selectivity and gas-sensing efficiency of a ReS2-FET device. We found that light illumination modulates the drain current response in a ReS2-FET to adsorbed molecules, and the sensing activity differs depending on the gas species used, such as acetone, ethanol, and methanol. Furthermore, wavelength and carrier density rely on certain variations in light-modulated sensing behaviors for each chemical. The device will distinguish the gas concentration in a mixture of VOCs using the differences induced by light illumination, enhancing the selectivity of the sensor device. Our results shed new light on the sensing technologies for realizing a large-scale sensor network in the Internet-of-Things era.
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Affiliation(s)
- Amir Zulkefli
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Chemistry and Biochemistry, Graduate School of Engineering, Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Bablu Mukherjee
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Ryoji Sahara
- Research Center for Structural Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Ryoma Hayakawa
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takuya Iwasaki
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Yutaka Wakayama
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Chemistry and Biochemistry, Graduate School of Engineering, Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Shu Nakaharai
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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14
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Das S, Prasad S, Chakraborty B, Jariwala B, Shradha S, Muthu DVS, Bhattacharya A, Waghmare UV, Sood AK. Doping controlled Fano resonance in bilayer 1T'-ReS 2: Raman experiments and first-principles theoretical analysis. NANOSCALE 2021; 13:1248-1256. [PMID: 33404576 DOI: 10.1039/d0nr06583h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In the bilayer ReS2 channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broadening of linewidth for the in-plane vibrational modes, leaving the out-of-plane vibrational modes unaffected. The largest change is observed for the in-plane Raman mode at ∼151 cm-1, which also shows doping induced Fano resonance with the Fano parameter 1/q = -0.17 at a doping concentration of ∼3.7 × 1013 cm-2. A quantitative understanding of our results is provided by first-principles density functional theory (DFT), showing that the electron-phonon coupling (EPC) of in-plane modes is stronger than that of out-of-plane modes, and its variation with doping is independent of the layer stacking. The origin of large EPC is traced to 1T to 1T' structural phase transition of ReS2 involving in-plane displacement of atoms whose instability is driven by the nested Fermi surface of the 1T structure. Results are compared with those of the isostructural trilayer ReSe2.
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Affiliation(s)
- Subhadip Das
- Department of Physics, Indian Institute of Science, Bangalore 560012, India.
| | - Suchitra Prasad
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India
| | | | - Bhakti Jariwala
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
| | - Sai Shradha
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
| | - D V S Muthu
- Department of Physics, Indian Institute of Science, Bangalore 560012, India.
| | - Arnab Bhattacharya
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
| | - U V Waghmare
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India
| | - A K Sood
- Department of Physics, Indian Institute of Science, Bangalore 560012, India.
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15
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Schiettecatte P, Rousaki A, Vandenabeele P, Geiregat P, Hens Z. Liquid-Phase Exfoliation of Rhenium Disulfide by Solubility Parameter Matching. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2020; 36:15493-15500. [PMID: 33315400 DOI: 10.1021/acs.langmuir.0c02517] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
In this work, we provide a detailed account of the liquid-phase exfoliation (LPE) of rhenium disulfide (ReS2), a promising new-generation two-dimensional material. By screening LPE in a wide range of solvents, we show that the most optimal solvents are characterized by similar Hildebrand or dispersive Hansen solubility parameters of 25 and 18 MPa1/2, respectively. Such values are attained by solvents such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, and 1-butanol. In line with solution thermodynamics, we interpret the conditions for high-yield exfoliation as a matching of the solvent and ReS2 solubility parameters. Using N-methyl-2-pyrrolidone as an exemplary exfoliation solvent, we undertook a detailed analysis of the exfoliated ReS2. In-depth morphological, structural, and elemental characterization outlined that the LPE procedure presented here produces few-layer, anisotropically stacked, and chemically pure ReS2 platelets with long-term stability against oxidation. These results underscore the suitability of LPE to batch-produce few-layer and pristine ReS2 in solvents that have a solubility parameter close to 25 MPa1/2.
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Affiliation(s)
- Pieter Schiettecatte
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
| | - Anastasia Rousaki
- Raman Spectroscopy Research Group, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Peter Vandenabeele
- Raman Spectroscopy Research Group, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Archaeometry Research Group, Department of Archaeology, Ghent University, 9000 Gent, Belgium
| | - Pieter Geiregat
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
| | - Zeger Hens
- Physics and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
- Center for Nano and Biophotonics, Ghent University, 9000 Gent, Belgium
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16
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Li X, Chen C, Yang Y, Lei Z, Xu H. 2D Re-Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2002320. [PMID: 33304762 PMCID: PMC7709994 DOI: 10.1002/advs.202002320] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2020] [Revised: 08/22/2020] [Indexed: 05/16/2023]
Abstract
The rise of 2D transition-metal dichalcogenides (TMDs) materials has enormous implications for the scientific community and beyond. Among TMDs, ReX2 (X = S, Se) has attracted significant interest regarding its unusual 1T' structure and extraordinary properties in various fields during the past 7 years. For instance, ReX2 possesses large bandgaps (ReSe2: 1.3 eV, ReS2: 1.6 eV), distinctive interlayer decoupling, and strong anisotropic properties, which endow more degree of freedom for constructing novel optoelectronic, logic circuit, and sensor devices. Moreover, facile ion intercalation, abundant active sites, together with stable 1T' structure enable them great perspective to fabricate high-performance catalysts and advanced energy storage devices. In this review, the structural features, fundamental physicochemical properties, as well as all existing applications of Re-based TMDs materials are comprehensively introduced. Especially, the emerging synthesis strategies are critically analyzed and pay particular attention is paid to its growth mechanism with probing the assembly process of domain architectures. Finally, current challenges and future opportunities regarding the controlled preparation methods, property, and application exploration of Re-based TMDs are discussed.
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Affiliation(s)
- Xiaobo Li
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Chao Chen
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Yang Yang
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Zhibin Lei
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
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17
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Distinct magneto-Raman signatures of spin-flip phase transitions in CrI 3. Nat Commun 2020; 11:3879. [PMID: 32747673 PMCID: PMC7398929 DOI: 10.1038/s41467-020-17320-3] [Citation(s) in RCA: 38] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2019] [Accepted: 06/19/2020] [Indexed: 11/08/2022] Open
Abstract
The discovery of 2-dimensional (2D) materials, such as CrI3, that retain magnetic ordering at monolayer thickness has resulted in a surge of both pure and applied research in 2D magnetism. Here, we report a magneto-Raman spectroscopy study on multilayered CrI3, focusing on two additional features in the spectra that appear below the magnetic ordering temperature and were previously assigned to high frequency magnons. Instead, we conclude these modes are actually zone-folded phonons. We observe a striking evolution of the Raman spectra with increasing magnetic field applied perpendicular to the atomic layers in which clear, sudden changes in intensities of the modes are attributed to the interlayer ordering changing from antiferromagnetic to ferromagnetic at a critical magnetic field. Our work highlights the sensitivity of the Raman modes to weak interlayer spin ordering in CrI3.
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18
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Wang Z, Luo R, Johnson I, Kashani H, Chen M. Inlaid ReS 2 Quantum Dots in Monolayer MoS 2. ACS NANO 2020; 14:899-906. [PMID: 31825587 DOI: 10.1021/acsnano.9b08186] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are prospective materials for quantum devices owing to their inherent 2D confinements. They also provide a platform to realize even lower-dimensional in-plane electron confinement, for example, 0D quantum dots, for exotic physical properties. However, fabrication of such laterally confined monolayer (1L) nanostructure in 1L crystals remains challenging. Here we report the realization of 1L ReS2 quantum dots epitaxially inlaid in 1L MoS2 by a two-step chemical vapor deposition method combining with plasma treatment. The lateral lattice mismatch between ReS2 and MoS2 leads to size-dependent crystal structure evolution and in-plane straining of the 1L ReS2 quantum dots. Optical spectroscopies reveal the abnormal charge transfer between the 1L ReS2 quantum dots and the MoS2 matrix, resulting from electron trapping in the 1L ReS2 quantum dots. This study may shed light on the development of in-plane quantum-confined devices in 2D materials for potential applications in quantum information.
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Affiliation(s)
- Ziqian Wang
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Ruichun Luo
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Isaac Johnson
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Hamzeh Kashani
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Mingwei Chen
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
- WPI Advanced Institute for Materials Research , Tohoku University , Sendai 980-8577 , Japan
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He Q, Zhou J, Tang W, Hao Y, Sun L, Zhu C, Xu F, Chen J, Wu Y, Wu Z, Xu B, Liu G, Li X, Zhang C, Kang J. Deeply Exploring Anisotropic Evolution toward Large-Scale Growth of Monolayer ReS 2. ACS APPLIED MATERIALS & INTERFACES 2020; 12:2862-2870. [PMID: 31850729 DOI: 10.1021/acsami.9b18623] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Among large numbers of transition metal dichalcogenides (TMDCs), monolayer rhenium disulfide (ReS2) is of particular interest due to its unique structural anisotropy, which opens up unprecedented opportunities in dichroic atomical electronics. Understanding the domain structure and controlling the anisotropic evolution of ReS2 during the growth is considered critical for increasing the domain size toward a large-scale growth of monolayer ReS2. Herein, by employing angle-resolved Raman spectroscopy, we reveal that the hexagonal ReS2 domain is constructed by six well-defined subdomains with each b-axis parallel to the diagonal of the hexagon. By further combining the first-principles calculations and the transmission electron microscopy (TEM) characterization, a dislocation-involved anisotropic evolution is proposed to explain the formation of the domain structures and understand the limitation of the domain size. Based on these findings, growth rates of different crystal planes are well controlled to enlarge the domain size, and moreover, single-crystal domains with a triangle shape are obtained. With the improved domain size, large-scale uniform, strictly monolayer ReS2 films are grown further. Scalable field-effect transistor (FET) arrays are constructed, which show good electrical performances comparable or even superior to that of the single domains reported at room temperature. This work not only sheds light on comprehending the novel growth mechanism of ReS2 but also offers a robust and controllable strategy for the synthesis of large-area and high-quality two-dimensional materials with low structural symmetry.
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Affiliation(s)
| | | | | | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, and Jiangsu Key Laboratory of Artificial Functional Materials , Nanjing University , Nanjing 210093 , P. R. China
- Haian Institute of New Technology , Nanjing University , Haian 226600 , P. R. China
- School of Physics and Microelectronics , Zhengzhou University , Zhengzhou , Henan 450001 , P. R. China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of the Ministry of Education , Southeast University , Nanjing 210096 , P. R. China
| | - Chongyang Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of the Ministry of Education , Southeast University , Nanjing 210096 , P. R. China
| | - Feng Xu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of the Ministry of Education , Southeast University , Nanjing 210096 , P. R. China
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20
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McCreary A, Simpson JR, Mai TT, McMichael RD, Douglas JE, Butch N, Dennis C, Aguilar RV, Walker ARH. Quasi-Two-Dimensional Magnon Identification in Antiferromagnetic FePS 3via Magneto-Raman Spectroscopy. PHYSICAL REVIEW. B 2020; 101:10.1103/PhysRevB.101.064416. [PMID: 38616972 PMCID: PMC11015466 DOI: 10.1103/physrevb.101.064416] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Recently it was discovered that van der Waals-bonded magnetic materials retain long range magnetic ordering down to a single layer, opening many avenues in fundamental physics and potential applications of these fascinating materials. One such material is FePS3, a large spin (S=2) Mott insulator where the Fe atoms form a honeycomb lattice. In the bulk, FePS3 has been shown to be a quasi-two-dimensional-Ising antiferromagnet, with additional features in the Raman spectra emerging below the Néel temperature (T N ) of approximately 120 K. Using magneto-Raman spectroscopy as an optical probe of magnetic structure, we show that one of these Raman-active modes in the magnetically ordered state is actually a magnon with a frequency of ≈3.7 THz (122 cm-1). Contrary to previous work, which interpreted this feature as a phonon, our Raman data shows the expected frequency shifting and splitting of the magnon as a function of temperature and magnetic field, respectively, where we determine the g-factor to be ≈2. In addition, the symmetry behavior of the magnon is studied by polarization-dependent Raman spectroscopy and explained using the magnetic point group of FePS3.
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Affiliation(s)
- Amber McCreary
- Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Jeffrey R. Simpson
- Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
- Department of Physics, Astronomy, and Geosciences, Towson University, Towson, MD 21252, USA
| | - Thuc T. Mai
- Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
- Department of Physics, The Ohio State University, Columbus, OH 43210, USA
| | - Robert D. McMichael
- Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Jason E. Douglas
- Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Nicholas Butch
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Cindi Dennis
- Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | | | - Angela R. Hight Walker
- Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
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21
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Martín-García B, Spirito D, Bellani S, Prato M, Romano V, Polovitsyn A, Brescia R, Oropesa-Nuñez R, Najafi L, Ansaldo A, D'Angelo G, Pellegrini V, Krahne R, Moreels I, Bonaccorso F. Extending the Colloidal Transition Metal Dichalcogenide Library to ReS 2 Nanosheets for Application in Gas Sensing and Electrocatalysis. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1904670. [PMID: 31788951 DOI: 10.1002/smll.201904670] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2019] [Revised: 11/04/2019] [Indexed: 06/10/2023]
Abstract
Among the large family of transition metal dichalcogenides, recently ReS2 has stood out due to its nearly layer-independent optoelectronic and physicochemical properties related to its 1T distorted octahedral structure. This structure leads to strong in-plane anisotropy, and the presence of active sites at its surface makes ReS2 interesting for gas sensing and catalysts applications. However, current fabrication methods use chemical or physical vapor deposition (CVD or PVD) processes that are costly, time-consuming and complex, therefore limiting its large-scale production and exploitation. To address this issue, a colloidal synthesis approach is developed, which allows the production of ReS2 at temperatures below 360 °C and with reaction times shorter than 2h. By combining the solution-based synthesis with surface functionalization strategies, the feasibility of colloidal ReS2 nanosheet films for sensing different gases is demonstrated with highly competitive performance in comparison with devices built with CVD-grown ReS2 and MoS2 . In addition, the integration of the ReS2 nanosheet films in assemblies together with carbon nanotubes allows to fabricate electrodes for electrocatalysis for H2 production in both acid and alkaline conditions. Results from proof-of-principle devices show an electrocatalytic overpotential competitive with devices based on ReS2 produced by CVD, and even with MoS2 , WS2 , and MoSe2 electrocatalysts.
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Affiliation(s)
- Beatriz Martín-García
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Nanochemistry Department, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Davide Spirito
- Optoelectronics Group, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Sebastiano Bellani
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Mirko Prato
- Materials Characterization Facility, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Valentino Romano
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Dipartimento di Scienze Matematiche ed Informatiche, Scienze Fisiche e Scienze della Terra, Università di Messina, Viale F. Stagno d'Alcontres 31, S. Agata, 98166, Messina, Italy
| | - Anatolii Polovitsyn
- Nanochemistry Department, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Department of Chemistry, Ghent University, Krijgslaan 281-S3, 9000, Gent, Belgium
| | - Rosaria Brescia
- Electron Microscopy Facility, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | | | - Leyla Najafi
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Alberto Ansaldo
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Giovanna D'Angelo
- Dipartimento di Scienze Matematiche ed Informatiche, Scienze Fisiche e Scienze della Terra, Università di Messina, Viale F. Stagno d'Alcontres 31, S. Agata, 98166, Messina, Italy
| | - Vittorio Pellegrini
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional Spa., Via Albisola 121, 16163, Genova, Italy
| | - Roman Krahne
- Optoelectronics Group, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Iwan Moreels
- Nanochemistry Department, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Department of Chemistry, Ghent University, Krijgslaan 281-S3, 9000, Gent, Belgium
| | - Francesco Bonaccorso
- Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional Spa., Via Albisola 121, 16163, Genova, Italy
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22
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Wang YY, Zhou JD, Jiang J, Yin TT, Yin ZX, Liu Z, Shen ZX. In-plane optical anisotropy in ReS 2 flakes determined by angle-resolved polarized optical contrast spectroscopy. NANOSCALE 2019; 11:20199-20205. [PMID: 31617546 DOI: 10.1039/c9nr07502j] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Various in-plane anisotropic properties are observed for the layered semiconducting transition metal dichalcogenide (TMD), rhenium disulfide (ReS2) due to its reduced symmetry. The understanding of these unique anisotropic behaviors in ReS2 will promote its applications in optoelectronics. In this work, angle-resolved polarized optical contrast spectroscopy has proved to be an efficient, quantitative, and non-destructive method to probe the optical anisotropy in ReS2 flakes with different thicknesses. The contrast value of ReS2 displays the maximum intensity when the polarization of incident light is along the Re-Re chain direction, while the contrast shows the minimum value when the polarization is perpendicular. An empirical equation for in-plane anisotropic refractive index calculation has been proposed and the angle-resolved polarized optical contrasts of 1-3-layer ReS2 are calculated. The calculation results show good agreements with the experimental observations. This indicates that the proposed equation is indeed appropriate for the quantitative understanding of birefringence and dichroism in ReS2 flakes. Our results not only shed light on the identification of crystal axes in anisotropic materials by using angle-resolved polarized contrast spectroscopy, but also provide quantitative information about anisotropy in anisotropic materials such as ReS2.
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Affiliation(s)
- Ying Ying Wang
- Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Jia Dong Zhou
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jie Jiang
- School of Marine Science and Technology, Harbin Institute of Technology at Weihai, Weihai 264209, China and State Key Laboratory of Urban Water Resource & Environment, Harbin Institute of Technology, Harbin 150001, China
| | - Ting Ting Yin
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637616, Singapore.
| | - Zhi Xiong Yin
- Department of Physics, Sichuan University, Chengdu 610064, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Ze Xiang Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637616, Singapore.
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23
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Pan J, Wang R, Xu X, Hu J, Ma L. Transition metal doping activated basal-plane catalytic activity of two-dimensional 1T'-ReS 2 for hydrogen evolution reaction: a first-principles calculation study. NANOSCALE 2019; 11:10402-10409. [PMID: 31111853 DOI: 10.1039/c9nr00997c] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The two-dimensional 1T' phase of ReS2 has a unique structure and its electronic properties are independent of its thickness. These features distinguish ReS2 from other two-dimensional transition metal dichalcogenides (TMDCs) used as catalysts in the hydrogen evolution reaction (HER) and suggest that it may be a suitable alternative catalyst to the expensive Pt most commonly in this reaction. Similar to traditional TMDCs, the catalytic activity of ReS2 is mainly contributed by the edge sites, whereas the basal plane, which accounts for a large percentage of the surface area, has poor catalytic activity. Activation of the basal plane of ReS2 would be an ideal strategy by which to boost its catalytic performance. We used density functional theory calculations to show that the catalytic activity of the ReS2 basal plane can be efficiently activated by doping with transition metal (TM) atoms such as Mo, Cr, Mn, Fe, Co, Pt, Au and Ag. Our results indicate that doping with a TM not only significantly reduces the hydrogen adsorption free energy (ΔGH*) of ReS2 by tuning the adsorption behavior of the H atom on the ReS2 surface, but can also expose more active sites by introducing more unsaturated electrons. Pt-doped ReS2 showed the highest catalytic activity for the HER of all the TM-doped ReS2 systems investigated, with ΔGH* = 0, a low reaction barrier and an increased density of active sites on the basal plane. More importantly, ReS2 doped with the non-noble TMs Mo and Cr showed excellent HER catalytic activities comparable with those of Pt-doped ReS2. Our findings will help to guide the future design of new HER catalysts based on TMDCs.
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Affiliation(s)
- Jing Pan
- College of Physics Science and Technology, Yangzhou University, Yangzhou, 225002, China.
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24
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Li T, Luo W, Kitadai H, Wang X, Ling X. Probing the Domain Architecture in 2D α-Mo 2 C via Polarized Raman Spectroscopy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807160. [PMID: 30614576 DOI: 10.1002/adma.201807160] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2018] [Revised: 12/16/2018] [Indexed: 06/09/2023]
Abstract
MXenes are emerging 2D materials with intriguing properties such as excellent stability and high conductivity. Here, a systematic study on the Raman spectra of 2D α-Mo2 C (molybdenum carbide), a promising member in MXene family, is conducted. Six experimentally observed Raman modes from ultrathin α-Mo2 C crystal are first assigned with the assistance of phonon dispersion calculated from density functional theory. Angle-resolved polarized Raman spectroscopy indicates the anisotropy of α-Mo2 C in the b-c plane. Raman spectroscopy is further used to study the unique domain structures of 2D α-Mo2 C crystals grown by chemical vapor deposition. A Raman mapping investigation suggests that most of the α-Mo2 C flakes contain multiple domains and the c-axes of neighboring domains tend to form a 60° or 120° angle, due to the weak MoC bonds in this interstitial carbide and the low formation energy of the carbon chains along three equivalent directions. This study demonstrates that polarized Raman spectroscopy is a powerful and effective way to characterize the domain structures in α-Mo2 C, which will facilitate the further exploration of the domain-structure-related properties and potential applications of α-Mo2 C.
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Affiliation(s)
- Tianshu Li
- Division of Materials Science and Engineering, Boston University, 15 St Marys St, Boston, MA, 02215, USA
| | - Weijun Luo
- Department of Chemistry, Boston University, 590 Commonwealth Avenue, Boston, MA, 02215, USA
| | - Hikari Kitadai
- Department of Chemistry, Boston University, 590 Commonwealth Avenue, Boston, MA, 02215, USA
| | - Xingzhi Wang
- Department of Chemistry, Boston University, 590 Commonwealth Avenue, Boston, MA, 02215, USA
| | - Xi Ling
- Division of Materials Science and Engineering, Boston University, 15 St Marys St, Boston, MA, 02215, USA
- Department of Chemistry, Boston University, 590 Commonwealth Avenue, Boston, MA, 02215, USA
- The Photonics Center, Boston University, 8 St Marys St, Boston, MA, 02215, USA
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25
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Lee BC, Na J, Choi JH, Ji H, Kim GT, Joo MK. Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1805860. [PMID: 30549104 DOI: 10.1002/adma.201805860] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2018] [Revised: 10/28/2018] [Indexed: 06/09/2023]
Abstract
Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas-Fermi charge screening (λTF ) and interlayer resistance (Rint ). When both effects occur in carrier transport, a channel centroid migrates along the c-axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS2 ), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of λTF and Rint coupling. The effective tunneling distance probed via low-frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS2 .
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Affiliation(s)
- Byung Chul Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Junhong Na
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jun Hee Choi
- Department of Physics, Ewha Womans University, Seoul, 03760, Republic of Korea
| | - Hyunjin Ji
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Gyu-Tae Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Min-Kyu Joo
- Department of Applied Physics, Sookmyung Women's University, Seoul, 04310, Republic of Korea
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26
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Xiao Y, Zhang T, Zhou M, Weng Z, Chang X, Yang K, Liu J, Li J, Wei B, Wang Z, Fu L. Disassembly of 2D Vertical Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1805976. [PMID: 30457681 DOI: 10.1002/adma.201805976] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2018] [Revised: 10/30/2018] [Indexed: 06/09/2023]
Abstract
As one of the most widely discussed fields, the assembly of nanomaterials has always been extensively studied. However, its inverse process, namely disassembly, is still limited in the ambit of biomolecules. Specifically, in the emerging 2D research field, disassembly still remains unexplored. Inspired by the disassembly of DNA molecules via breaking intermolecular hydrogen bonds, the disassembly of 2D vertical heterostructures (2DVHs) is first achieved through the weakening of the interlayer van der Waals interactions. As a demonstration, ReS2 /WS2 VHs is successfully disassembled into individual building blocks. Density functional theory calculations are performed to study the disassembly of the 2DVHs, which simulate that 2DVHs are first activated by the disassembly promoters and then disassembled with weakened interlayer van der Waals interactions. Such a disassembly process demonstrates that it has great potential to be expanded as a general strategy to achieve the disassembly of other 2D superstructures.
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Affiliation(s)
- Yao Xiao
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Tao Zhang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Mengyue Zhou
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Zheng Weng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Xuejiao Chang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Kena Yang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Jinglu Liu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Juntao Li
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Bin Wei
- Department of Quantum Materials Science and Technology, International Iberian Nanotechnology Laboratory (INL), Avenida Mestre Jose Veiga, Braga, 4715-330, Portugal
| | - Zhongchang Wang
- Department of Quantum Materials Science and Technology, International Iberian Nanotechnology Laboratory (INL), Avenida Mestre Jose Veiga, Braga, 4715-330, Portugal
| | - Lei Fu
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
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27
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Nazir G, Rehman MA, Khan MF, Dastgeer G, Aftab S, Afzal AM, Seo Y, Eom J. Comparison of Electrical and Photoelectrical Properties of ReS 2 Field-Effect Transistors on Different Dielectric Substrates. ACS APPLIED MATERIALS & INTERFACES 2018; 10:32501-32509. [PMID: 30182711 DOI: 10.1021/acsami.8b06728] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
As one of the newly discovered transition-metal dichalcogenides (TMDs), rhenium disulfide (ReS2) has been investigated mostly because of its unique characteristics such as the direct band gap nature even in bulk form, which is not prominent in other TMDs (e.g., MoS2, WSe2, etc.). However, this material possesses a low mobility and an on/off ratio, which restrict its usage in high-speed and fast switching applications. Low mobilities or on/off ratios can also be caused by substrate scattering as well as environmental effects. In this study, we used few-layer ReS2 (FL-ReS2) as a channel material to investigate the substrate-dependent mobility, current on/off ratio, Schottky barrier height (SBH), and trap density of states of different dielectric substrates. The hexagonal boron nitride (h-BN)/FL-ReS2/h-BN structure was observed to exhibit a high mobility of 45 cm2 V-1 s-1, current on/off ratio of about 107, the lowest SBH of about 12 mV at a zero back-gate voltage ( Vbg), and a low trap density of states of about 5 × 1013 cm-3. These quantities are reasonably superior compared to the FL-ReS2 devices on SiO2 substrates. We also observed a nearly 5-fold improvement in the photoresponsivity and external quantum efficiency values for the FL-ReS2 devices on h-BN substrates. We believe that the photonic characteristics of TMDs can be improved by using h-BN as the substrate and capping layer.
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28
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Pradhan NR, Garcia C, Isenberg B, Rhodes D, Feng S, Memaran S, Xin Y, McCreary A, Walker ARH, Raeliarijaona A, Terrones H, Terrones M, McGill S, Balicas L. Phase Modulators Based on High Mobility Ambipolar ReSe 2 Field-Effect Transistors. Sci Rep 2018; 8:12745. [PMID: 30143693 PMCID: PMC6109127 DOI: 10.1038/s41598-018-30969-7] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2018] [Accepted: 08/09/2018] [Indexed: 11/09/2022] Open
Abstract
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 102 cm2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90° or nearly 180°. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2.
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Affiliation(s)
- Nihar R Pradhan
- Department of Chemistry, Physics and Atmospheric Sciences, Jackson State University, Jackson, MS, 39217, USA. .,National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.
| | - Carlos Garcia
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Bridget Isenberg
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.,Lincoln High School, Tallahassee, FL, 32311, USA
| | - Daniel Rhodes
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Simin Feng
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Shahriar Memaran
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306, USA
| | - Yan Xin
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA
| | - Amber McCreary
- Engineering Physics Division, Physical Measurement Laboratory, NIST, Gaithersburg, Maryland, 20899, USA
| | - Angela R Hight Walker
- Engineering Physics Division, Physical Measurement Laboratory, NIST, Gaithersburg, Maryland, 20899, USA
| | - Aldo Raeliarijaona
- Rensselaer Polytechnic Institute, Department of Physics, Applied Physics, and Astronomy, Troy, NY, 12180, USA
| | - Humberto Terrones
- Rensselaer Polytechnic Institute, Department of Physics, Applied Physics, and Astronomy, Troy, NY, 12180, USA
| | - Mauricio Terrones
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA.,Department of Materials Science & Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.,Department of Chemistry, The Pennsylvania State University, University Park, PA, 16802, USA.,Institute of Carbon Science and Technology, Faculty of Engineering, Shinshu University, Nagano, 380-8553, Japan
| | - Stephen McGill
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA
| | - Luis Balicas
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA. .,Department of Physics, Florida State University, Tallahassee, FL, 32306, USA.
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29
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Miao P, Qin JK, Shen Y, Su H, Dai J, Song B, Du Y, Sun M, Zhang W, Wang HL, Xu CY, Xu P. Unraveling the Raman Enhancement Mechanism on 1T'-Phase ReS 2 Nanosheets. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1704079. [PMID: 29411513 DOI: 10.1002/smll.201704079] [Citation(s) in RCA: 45] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2017] [Revised: 12/19/2017] [Indexed: 06/08/2023]
Abstract
2D transition metal dichalcogenides materials are explored as potential surface-enhanced Raman spectroscopy substrates. Herein, a systematic study of the Raman enhancement mechanism on distorted 1T (1T') rhenium disulfide (ReS2 ) nanosheets is demonstrated. Combined Raman and photoluminescence studies with the introduction of an Al2 O3 dielectric layer unambiguously reveal that Raman enhancement on ReS2 materials is from a charge transfer process rather than from an energy transfer process, and Raman enhancement is inversely proportional while the photoluminescence quenching effect is proportional to the layer number (thickness) of ReS2 nanosheets. On monolayer ReS2 film, a strong resonance-enhanced Raman scattering effect dependent on the laser excitation energy is detected, and a detection limit as low as 10-9 m can be reached from the studied dye molecules such as rhodamine 6G and methylene blue. Such a high enhancement factor achieved through enhanced charge interaction between target molecule and substrate suggests that with careful consideration of the layer-number-dependent feature and excitation-energy-related resonance effect, ReS2 is a promising Raman enhancement platform for sensing applications.
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Affiliation(s)
- Peng Miao
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Jing-Kai Qin
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Yunfeng Shen
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Huimin Su
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Junfeng Dai
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Bo Song
- Academy of Fundamental and Interdisciplinary Sciences, Department of Physics, Harbin Institute of Technology, Harbin, 150001, China
| | - Yunchen Du
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Mengtao Sun
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, Center for Green Innovation, School of Mathematics and Physics, University of Science and Technology, Beijing, 100083, China
| | - Wei Zhang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China
| | - Hsing-Lin Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Cheng-Yan Xu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Ping Xu
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China
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30
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Favron A, Goudreault FA, Gosselin V, Groulx J, Côté M, Leonelli R, Germain JF, Phaneuf-L'Heureux AL, Francoeur S, Martel R. Second-Order Raman Scattering in Exfoliated Black Phosphorus. NANO LETTERS 2018; 18:1018-1027. [PMID: 29320856 DOI: 10.1021/acs.nanolett.7b04486] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Second-order Raman scattering has been extensively studied in carbon-based nanomaterials, for example, nanotube and graphene, because it activates normally forbidden Raman modes that are sensitive to crystal disorder, such as defects, dopants, strain, and so forth. The sp2-hybridized carbon systems are, however, the exception among nanomaterials, where first-order Raman processes usually dominate. Here we report the identification of four second-order Raman modes, named D1, D1', D2 and D2', in exfoliated black phosphorus (P(black)), an elemental direct-gap semiconductor exhibiting strong mechanical and electronic anisotropies. Located in close proximity to the Ag1 and Ag2 modes, these new modes dominate at an excitation wavelength of 633 nm. Their evolutions as a function of sample thickness, excitation wavelength, and defect density indicate that they are defect-activated and involve high-momentum phonons in a doubly resonant Raman process. Ab initio simulations of a monolayer reveal that the D' and D modes occur through intravalley scatterings with split contributions in the armchair and zigzag directions, respectively. The high sensitivity of these D modes to disorder helps explaining several discrepancies found in the literature.
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Affiliation(s)
- Alexandre Favron
- Département de Physique and Regroupement Québécois sur les Matériaux de Pointe, Université de Montréal , C. P. 6128, Succursale Centre-Ville, Montréal, Québec H3C 3J7, Canada
| | - Félix Antoine Goudreault
- Département de Physique and Regroupement Québécois sur les Matériaux de Pointe, Université de Montréal , C. P. 6128, Succursale Centre-Ville, Montréal, Québec H3C 3J7, Canada
| | - Vincent Gosselin
- Département de Physique and Regroupement Québécois sur les Matériaux de Pointe, Université de Montréal , C. P. 6128, Succursale Centre-Ville, Montréal, Québec H3C 3J7, Canada
| | - Julien Groulx
- Département de Physique and Regroupement Québécois sur les Matériaux de Pointe, Université de Montréal , C. P. 6128, Succursale Centre-Ville, Montréal, Québec H3C 3J7, Canada
| | - Michel Côté
- Département de Physique and Regroupement Québécois sur les Matériaux de Pointe, Université de Montréal , C. P. 6128, Succursale Centre-Ville, Montréal, Québec H3C 3J7, Canada
| | - Richard Leonelli
- Département de Physique and Regroupement Québécois sur les Matériaux de Pointe, Université de Montréal , C. P. 6128, Succursale Centre-Ville, Montréal, Québec H3C 3J7, Canada
| | - Jean-Francis Germain
- Département de Génie Physique, École Polytechnique de Montréal , C. P. 6079, Succursale Centre-ville, Montréal, Québec H3C 3A7, Canada
| | - Anne-Laurence Phaneuf-L'Heureux
- Département de Génie Physique, École Polytechnique de Montréal , C. P. 6079, Succursale Centre-ville, Montréal, Québec H3C 3A7, Canada
| | - Sébastien Francoeur
- Département de Génie Physique, École Polytechnique de Montréal , C. P. 6079, Succursale Centre-ville, Montréal, Québec H3C 3A7, Canada
| | - Richard Martel
- Département de Chimie and Regroupement Québécois sur les Matériaux de Pointe, Université de Montréal , C. P. 6128, Succursale Centre-Ville, Montréal, Québec H3C 3J7, Canada
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31
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Borowiec J, Gillin WP, Willis MAC, Boi FS, He Y, Wen JQ, Wang SL, Schulz L. Room temperature synthesis of ReS 2 through aqueous perrhenate sulfidation. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:055702. [PMID: 29324434 DOI: 10.1088/1361-648x/aaa474] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In this study, a direct sulfidation reaction of ammonium perrhenate (NH4ReO4) leading to a synthesis of rhenium disulfide (ReS2) is demonstrated. These findings reveal the first example of a simplistic bottom-up approach to the chemical synthesis of crystalline ReS2. The reaction presented here takes place at room temperature, in an ambient and solvent-free environment and without the necessity of a catalyst. The atomic composition and structure of the as-synthesized product were characterized using several analysis techniques including energy dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, transmission electron microscopy, Raman spectroscopy, thermogravimetric analysis and differential scanning calorimetry. The results indicated the formation of a lower symmetry (1T') ReS2 with a low degree of layer stacking.
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Affiliation(s)
- Joanna Borowiec
- College of Physical Science and Technology, Sichuan University, 610064 Chengdu, People's Republic of China
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32
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Zhang S, Zhang N, Zhao Y, Cheng T, Li X, Feng R, Xu H, Liu Z, Zhang J, Tong L. Spotting the differences in two-dimensional materials – the Raman scattering perspective. Chem Soc Rev 2018; 47:3217-3240. [DOI: 10.1039/c7cs00874k] [Citation(s) in RCA: 57] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This review discusses the Raman spectroscopic characterization of 2D materials with a focus on the “differences” from primitive 2D materials.
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