High-Mobility, Ultrathin Organic Semiconducting Films Realized by Surface-Mediated Crystallization

Effect of Materials Parameters on the Shape of Face-On Lamellae in Semi-Conducting Polymers: Insights From Qualitative Theory

Polymer semiconductors frequently form crystals or mesophases with lamellae, that comprise alternating layers of stacked backbones and side chains. Controlling lamellar orientation in films is essential for obtaining efficient charge carrier transport. Herein, lamellar orientation is investigated in an application-relevant setup: lamellae assembled on a substrate that strongly favors face-on orientation, but exposed to a film surface that promotes orientation along an "easy" direction, other than face on. It is assumed that the face-on order propagates from the substrate, but the lamellae bend to reduce their surface energy. A qualitative free-energy model is developed. The deformation is investigated as a function of film thickness, effective Young modulus, anchoring coefficient, and easy direction at the free surface. The calculations highlight the importance of elastic constants - lamellae can substantially deform already when Young moduli are only an order of magnitude smaller than the values that are reported for crystals. Softer Young moduli are expected when lamellar assembly occurs in a non-solidified mesophase that can be an equilibrium or (more speculatively) a transient state prior to crystallization. The alternative scenario of a two-layered film is also evaluated, where edge-on and face-on grains form, respectively, at the free surface and substrate.

Enantiopure Dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophenes: Reaching High Magnetoresistance Effect in OFETs

Chiral molecules are known to behave as spin filters due to the chiral induced spin selectivity (CISS) effect. Chirality can be implemented in molecular semiconductors in order to study the role of the CISS effect in charge transport and to find new materials for spintronic applications. In this study, the design and synthesis of a new class of enantiopure chiral organic semiconductors based on the well-known dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) core functionalized with chiral alkyl side chains is presented. When introduced in an organic field-effect transistor (OFET) with magnetic contacts, the two enantiomers, (R)-DNTT and (S)-DNTT, show an opposite behavior with respect to the relative direction of the magnetization of the contacts, oriented by an external magnetic field. Each enantiomer displays an unexpectedly high magnetoresistance over one preferred orientation of the spin current injected from the magnetic contacts. The result is the first reported OFET in which the current can be switched on and off upon inversion of the direction of the applied external magnetic field. This work contributes to the general understanding of the CISS effect and opens new avenues for the introduction of organic materials in spintronic devices.

Design of Molecules with Low Hole and Electron Reorganization Energy Using DFT Calculations and Bayesian Optimization

Materials exhibiting higher mobility than conventional organic semiconducting materials, such as fullerenes and fused thiophenes, are in high demand for applications in printed electronics. To discover new molecules that might show improved charge mobility, the adaptive design of experiments (DoE) to design molecules with low reorganization energy was performed by combining density functional theory (DFT) methods and machine learning techniques. DFT-calculated values of 165 molecules were used as an initial training dataset for a Gaussian process regression (GPR) model, and five rounds of molecular designs applying the GPR model and validation via DFT calculations were executed. As a result, new molecules whose reorganization energy is smaller than the lowest value in the initial training dataset were successfully discovered.

Revealing and Controlling Energy Barriers and Valleys at Grain Boundaries in Ultrathin Organic Films

In organic electronics, local crystalline order is of critical importance for the charge transport. Grain boundaries between molecularly ordered domains are generally known to hamper or completely suppress charge transfer and detailed knowledge of the local electronic nature is critical for future minimization of such malicious defects. However, grain boundaries are typically hidden within the bulk film and consequently escape observation or investigation. Here, a minimal model system in form of monolayer-thin films with sub-nm roughness of a prototypical n-type organic semiconductor is presented. Since these films consist of large crystalline areas, the detailed energy landscape at single grain boundaries can be studied using Kelvin probe force microscopy. By controlling the charge-carrier density in the films electrostatically, the impact of the grain boundaries on charge transport in organic devices is modeled. First, two distinct types of grain boundaries are identified, namely energetic barriers and valleys, which can coexist within the same thin film. Their absolute height is found to be especially pronounced at charge-carrier densities below 10¹² cm^{- 2} -the regime at which organic solar cells and light emitting diodes typically operate. Finally, processing conditions by which the type or energetic height of grain boundaries can be controlled are identified.

Nitrogen-Containing Perylene Diimides: Molecular Design, Robust Aggregated Structures, and Advances in n-Type Organic Semiconductors

ConspectusOrganic semiconductors (OSCs) have attracted much attention because of their potential applications for flexible and printed electronic devices and thus have been extensively investigated in a variety of research fields, such as organic chemistry, solid-state physics, and device physics and engineering. Organic thin-film transistors (OTFTs), a class of OSC-based devices, have been expected to be an alternative of silicon-based metal oxide semiconductor field-effect transistors (MOSFETs), which is the indispensable element for most of the current electronic devices. However, the noncovalently aggregated, van der Waals solid nature of the OSCs, by contrast to covalently bound silicon, conventionally exhibits lower carrier mobilities, limiting the practical applications of OTFTs. In particular, electron-transporting (i.e., n-type) OSCs lag behind their hole-transporting (p-type) counterparts in carrier mobility and ambient stability as OTFTs. This is primarily because of the difficulty in achieving compatibility between the aggregated structure exhibiting excellent carrier mobility and that with enough electron affinity. Recent understandings of carrier transport in OSCs explain that large and two-dimensionally isotropic transfer integrals coupled with small fluctuations are crucial for high carrier mobilities. In addition, from a practical point of view, the compatibility with practical device processes is highly required. Rational molecular design principles, therefore, are still demanded for developing OSCs and OTFTs toward high-end device applications.Herein, we will show our recent progress in the development of n-type OSCs with the key π-electron core (π-core) of benzo[de]isoquinolino[1,8-gh]quinolinetetracarboxylic diimide (BQQDI) on the basis of single-crystal OTFT technologies and the band-transport model enabled by two-dimensional molecular packing arrangements. The critical point is the introduction of electronegative nitrogen atoms into the π-core: the nitrogen atoms in BQQDI not only deepen the molecular orbital energies but also allow hydrogen-bonding-like attractive intermolecular interactions to control the aggregated structures, unlike the conventional role of the nitrogen introduced into OSCs only for the former role. Hence, the BQQDI analogues exhibit air-stable OTFT behavior and two-dimensional brickwork packing structures. Specifically, phenethyl-substituted analogue (PhC₂-BQQDI) has been shown as the first principal BQQDI-based material, demonstrating solution-processable thin-film single crystals, fewer anisotropic transfer integrals, and an effective suppression of molecular motions, leading to band-like electron-transport properties and stress-durable n-channel OTFT performances, in conjunction with the support of computational calculations. Insights into more fundamental points of view have been found by side-chain derivatization and OTFT studies on polycrystalline and single-crystal films. We hope that this Account provides readers with new strategies for designing high-performance OSCs by two-dimensional control of the aggregated structures.

A Critical Outlook for the Pursuit of Lower Contact Resistance in Organic Transistors

To take full advantage of recent and anticipated improvements in the performance of organic semiconductors employed in organic transistors, the high contact resistance arising at the interfaces between the organic semiconductor and the source and drain contacts must be reduced significantly. To date, only a small portion of the accumulated research on organic thin-film transistors (TFTs) has reported channel-width-normalized contact resistances below 100 Ωcm, well above what is regularly demonstrated in transistors based on inorganic semiconductors. A closer look at these cases and the relevant literature strongly suggests that the most significant factor leading to the lowest contact resistances in organic TFTs so far has been the control of the thin-film morphology of the organic semiconductor. By contrast, approaches aimed at increasing the charge-carrier density and/or reducing the intrinsic Schottky barrier height have so far played a relatively minor role in achieving the lowest contact resistances. Herein, the possible explanations for these observations are explored, including the prevalence of Fermi-level pinning and the difficulties in forming optimized interfaces with organic semiconductors. An overview of the research on these topics is provided, and potential device-engineering solutions are discussed based on recent advancements in the theoretical and experimental work on both organic and inorganic semiconductors.

Approaching isotropic charge transport of n-type organic semiconductors with bulky substituents

Benzo[de]isoquinolino[1,8-gh]quinolinetetracarboxylic diimide (BQQDI) is an n-type organic semiconductor that has shown unique multi-fold intermolecular hydrogen-bonding interactions, leading to aggregated structures with excellent charge transports and electron mobility properties. However, the strong intermolecular anchoring of BQQDI presents challenges for fine-tuning the molecular assembly and improving the semiconducting properties. Herein, we report the design and synthesis of two BQQDI derivatives with phenyl- and cyclohexyl substituents (Ph-BQQDI and Cy₆-BQQDI), where the two organic semiconductors show distinct molecular assemblies and degrees of intermolecular orbital overlaps. In addition, the difference in their packing motifs leads to strikingly different band structures that give rise to contrasting charge-transport capabilities. More specifically, Cy₆-BQQDI bearing bulky substituents exhibits isotropic intermolecular orbital overlaps resulting in equal averaged transfer integrals in both π-π stacking directions, even when dynamic disorders are taken into account; whereas Ph-BQQDI exhibits anisotropic averaged transfer integrals in these directions. As a result, Cy₆-BQQDI shows excellent device performances in both single-crystalline and polycrystalline thin-film organic field-effect transistors up to 2.3 and 1.0 cm² V^-1 s^-1, respectively.

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

Miniaturization of electronic circuits increases their overall performance. So far, electronics based on organic semiconductors has not played an important role in the miniaturization race. Here, we show the fabrication of liquid electrolyte gated vertical organic field effect transistors with channel lengths down to 2.4 nm. These ultrashort channel lengths are enabled by using insulating hexagonal boron nitride with atomically precise thickness and flatness as a spacer separating the vertically aligned source and drain electrodes. The transistors reveal promising electrical characteristics with output current densities of up to 2.95 MA cm^-2 at -0.4 V bias, on-off ratios of up to 10⁶, a steep subthreshold swing of down to 65 mV dec^-1 and a transconductance of up to 714 S m^-1. Realizing channel lengths in the sub-5 nm regime and operation voltages down to 100 μV proves the potential of organic semiconductors for future highly integrated or low power electronics.

Role of Perfluorophenyl Group in the Side Chain of Small-Molecule n-Type Organic Semiconductors in Stress Stability of Single-Crystal Transistors

Operational stability, such as long-term ambient durability and bias stress stability, is one of the most significant parameters in organic thin-film transistors (OTFTs). The understanding of such stabilities has been mainly devoted to energy levels of frontier orbitals, thin-film morphologies, and device configuration involving gate dielectrics and electrodes, whereas the roles of molecular and aggregated structural features in device stability are seldom discussed. In this Letter, we report a remarkable enhancement of operational stability, especially bias stress, of n-channel single-crystal OTFTs derived from a replacement of phenyl with perfluorophenyl groups in the side chain. Because of the several-molecule-thick single-crystal nature employed for the OTFTs, the crystal-surface properties are thought to be critical, where the surface structure composed of perfluorophenyl moieties could suppress interactions between environmental species and field-induced carriers owing to increased hydrophobicity and steric protection of π-conjugated units.

High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing

In recent years, much attention has been focused on two-dimensional (2D) material-based synaptic transistor devices because of their inherent advantages of low dimension, simultaneous read-write operation and high efficiency. However, process compatibility and repeatability of these materials are still a big challenge, as well as other issues such as complex transfer process and material selectivity. In this work, synaptic transistors with an ultrathin organic semiconductor layer (down to 7 nm) were obtained by the simple dip-coating process, which exhibited a high current switch ratio up to 10⁶, well off state as low as nearly 10^-12 A, and low operation voltage of -3 V. Moreover, various synaptic behaviors were successfully simulated including excitatory postsynaptic current, paired pulse facilitation, long-term potentiation, and long-term depression. More importantly, under ultrathin conditions, excellent memory preservation, and linearity of weight update were obtained because of the enhanced effect of defects and improved controllability of the gate voltage on the ultrathin active layer, which led to a pattern recognition rate up to 85%. This is the first work to demonstrate that the pattern recognition rate, a crucial parameter for neuromorphic computing can be significantly improved by reducing the thickness of the channel layer. Hence, these results not only reveal a simple and effective way to improve plasticity and memory retention of the artificial synapse via thickness modulation but also expand the material selection for the 2D artificial synaptic devices.

Engineered drug-loaded cells and cell derivatives as a delivery platform for cancer immunotherapy

Recent advances in improving cancer immunotherapy have been summarized with a focus on using functionalized intact cells and cell derivatives.

Optoelectronic Property Modulation in Chiral Organic Semiconductor/Polymer Blends

Organic phototransistors (OPTs) have been widely used in biomedical sensing, optical communications, and imaging. Charge-trapping effect has been utilized as an effective strategy for enhancing their photoresponsivity by effectively decreasing the dark current. The combination of organic semiconductors (OSCs), especially chiral OSCs, with insulating polymers has rarely been carried out for optoelectronic applications. Here, we fabricated OPTs containing both enantiopure and racemic air-stable n-type perylene diimide derivatives, CPDI-CN2-C6, and insulating biopolymer polylactide (PLA) and evaluated their photoresponsive properties. The PLA-blended systems exhibited greatly enhanced optoelectronic performances owing to the intense charge-trapping effect. Interestingly, the racemic system showed 3 times higher electron mobility and 12 times higher specific detectivity (1.3 × 10¹³ jones) compared with the enantiopure systems due to the more aggregated morphologies and larger grains, indicating that chiral composition can be used as a tuning parameter in optoelectronic devices. Our systematic study provides a feasible and effective method for producing high-performance n-type OPTs under ambient conditions.

Correlation between the static and dynamic responses of organic single-crystal field-effect transistors

Transistors, the most important logic elements, are maintained under dynamic influence during circuit operations. Practically, circuit design protocols and frequency responsibility should stem from a perfect agreement between the static and dynamic properties. However, despite remarkable improvements in mobility for organic semiconductors, the correlation between the device performances achieved under static and dynamic circumstances is controversial. Particularly in the case of organic semiconductors, it remains unclear whether parasitic elements that relate to their unique molecular aggregates may violate the radiofrequency circuit model. Thus, we herein report the manufacture of micrometre-scale transistor arrays composed of solution-processed organic semiconductors, which achieve near very high-frequency band operations. Systematic investigations into the device geometrical factors revealed that the radiofrequency circuit model established on a solid-state continuous medium is extendable to organic single-crystal field-effect transistors. The validity of this radiofrequency circuit model allows a reliable prediction of the performances of organic radiofrequency devices.

Alkyl-Substituted Selenium-Bridged V-Shaped Organic Semiconductors Exhibiting High Hole Mobility and Unusual Aggregation Behavior

Toward the development of high-performance organic semiconductors (OSCs), carrier mobility is the most important requirement for next-generation OSC-based electronics. The strategy is that OSCs consisting of a highly extended π-electron core exhibit two-dimensional (2D) aggregated structures to offer effective charge transport. However, such OSCs, in general, show poor solubility in common organic solvents, resulting in limited solution processability. This is a critical trade-off between the development of OSCs with simultaneous high carrier mobility and suitable solubility. To address this issue, herein, five-membered ring-fused selenium-bridged V-shaped binaphthalene with decyl substituents (C₁₀-DNS-VW) is developed and synthesized by an efficient method. C₁₀-DNS-VW exhibits significantly high solubility for solution processes. Notably, C₁₀-DNS-VW forms a one-dimensional π-stacked packing motif (1D motif) and a 2D herringbone (HB) packing motif (2D motif), depending on the crystal growth condition. On the other hand, the fabrication of thin films by means of both solution process and vacuum deposition techniques forms only the 2D HB motif. External stress tests such as heating and exposure to solvent vapor indicated that 1D and 2D motifs could be synergistically induced by the total balance of intermolecular interactions. Finally, the single-crystalline films of C₁₀-DNS-VW by solution process exhibit carrier mobility up to 11 cm² V^-1 s^-1 with suitable transistor stability under ambient conditions for more than two months, indicating that C₁₀-DNS-VW is one of the most promising candidates for breaking the trade-off in the field of solution-processed technologies.

Engineered PD-L1-Expressing Platelets Reverse New-Onset Type 1 Diabetes

The pathogenesis of Type 1 diabetes (T1D) arises from the destruction of insulin-producing β-cells by islet-specific autoreactive T cells. Inhibition of islet-specific autoreactive T cells to rescue β-cells is a promising approach to treat new-onset T1D. The immune checkpoint signal axis programmed death-1/programmed death-ligand 1 (PD-1/PD-L1) can effectively regulate the activity of T cells and prevent autoimmune attack. Here, megakaryocyte progenitor cells are genetically engineered to overexpress PD-L1 to produce immunosuppressive platelets. The PD-L1-overexpressing platelets (designated PD-L1 platelets) accumulate in the inflamed pancreas and may suppress the activity of pancreas autoreactive T cells in newly hyperglycemic non-obese diabetic (NOD) mice, protecting the insulin-producing β-cells from destruction. Moreover, PD-L1 platelet treatment also increases the percentage of the regulatory T cells (Tregs) and maintains immune tolerance in the pancreas. It is demonstrated that the rescue of β-cells by PD-L1 platelets can effectively maintain normoglycemia and reverse diabetes in newly hyperglycemic NOD mice.

Scalable Ultrahigh-Speed Fabrication of Uniform Polycrystalline Thin Films for Organic Transistors

The fabrication of organic semiconductor thin films by printing technologies is expected to enable the low-cost production of devices such as flexible display drivers, RF-ID tags, and various chemical/biological sensors. However, large-scale high-speed fabrication of uniform semiconductor thin films with adequate electrical properties for these devices remains a big challenge. Herein, we demonstrate an ultrafast and scalable fabrication of uniform polycrystalline thin films with 100% surface coverage using liquid crystalline semiconductors such as 2-phenyl-7-decyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) and 2.7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8), at a rate of 3 orders of magnitude higher than before, i.e., 40 mm/s (2.4 m/min) or more by dip-coating in the drainage regime. Organic transistors fabricated with polycrystalline thin films of Ph-BTBT-10 show average mobilities of 4.13 ± 0.75 cm²/(V s) in the bottom-gate-bottom-contact configuration and 10.90 ± 2.40 cm²/(V s) in the bottom-gate-top-contact configuration comparable to those of the devices prepared with single-crystalline thin films. More importantly, these films almost maintain the FET performance when the substrate size is extended up to 4 square inch. The present findings are available for other liquid crystalline semiconductors and bring us one step closer to the realization of printed electronics.

Solution-Processed, Large-Area, Two-Dimensional Crystals of Organic Semiconductors for Field-Effect Transistors and Phototransistors

Organic electronics with π-conjugated organic semiconductors are promising candidates for the next electronics revolution. For the conductive channel, the large-area two-dimensional (2D) crystals of organic semiconductors (2DCOS) serve as useful scaffolds for modern organic electronics, benefiting not only from long-range order and low defect density nature but also from unique charge transport characteristic and photoelectrical properties. Meanwhile, the solution process with advantages of cost-effectiveness and room temperature compatibility is the foundation of high-throughput print electrical devices. Herein, we will give an insightful overview to witness the huge advances in 2DCOS over the past decade. First, the typical influencing factors and state-of-the-art assembly strategies of the solution-process for large-area 2DCOS over sub-millimeter even to wafer size are discussed accompanying rational evaluation. Then, the charge transport characteristics and contact resistance of 2DCOS-based transistors are explored. Following this, beyond single transistors, the p-n junction devices and planar integrated circuits based on 2DCOS are also emphasized. Furthermore, the burgeoning phototransistors (OPTs) based on crystals in the 2D limits are elaborated. Next, we emphasized the unique and enhanced photoelectrical properties based on a hybrid system with other 2D van der Waals solids. Finally, frontier insights and opportunities are proposed, promoting further research in this field.

Robust, high-performance n-type organic semiconductors

Organic semiconductors (OSCs) are important active materials for the fabrication of next-generation organic-based electronics. However, the development of n-type OSCs lags behind that of p-type OSCs in terms of charge-carrier mobility and environmental stability. This is due to the absence of molecular designs that satisfy the requirements. The present study describes the design and synthesis of n-type OSCs based on challenging molecular features involving a π-electron core containing electronegative N atoms and substituents. The unique π-electron system simultaneously reinforces both electronic and structural interactions. The current n-type OSCs exhibit high electron mobilities with high reliability, atmospheric stability, and robustness against environmental and heat stresses and are superior to other existing n-type OSCs. This molecular design represents a rational strategy for the development of high-end organic-based electronics.

Strain-Sensitive Fluorescence from Two-Dimensional Organic Crystal

Strain-sensitive fluorescence materials have great potential in sensing applications owing to their low cost, intuitive signal, and user friendliness. Organic crystals are one of the most developed fluorescence materials. However, modulation of the fluorescence by strain is still a challenge. Here, for the first time, we investigate the strain-sensitive fluorescence of the two-dimensional (2D) organic crystal. Without interlayer interactions, the molecular arrangement in a 2D crystal can be easily tuned, which results in photoluminescence transformation between monomer emission and excimer emission. The 2D organic crystal has higher sensitivity under strain, compared with bulk organic crystals, showing great potential in practical applications such as tactile monitors, chameleon bionic skin, and visible leakage alarms.

Molecular Semiconductors for Logic Operations: Dead-End or Bright Future?

The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm² V^-1 s^-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

Liquid-Crystalline Order and Film Thickness Determine the Semicrystalline Morphology in Diketopyrrolopyrrole-Based Copolymers

Lyotropic liquid crystalline (LC) phases offer a means of controlling molecular order and orientation in thin films of conjugated polymers. Surface energy, surface-induced ordering, and film thickness are additional factors determining the molecular order in thin films. Through solvent vapor annealing and in situ atomic force microscopy in the swollen state, we show that in ultrathin films of a poly(dithiazolyldiketopyrrolopyrrole-tetrafluorobenzene) (PTzDPPTzF4) alternating copolymer stacks of monomolecular-thick layers with a 2.1 nm step height form, which resemble a lyotropic smectic LC phase. Within the smectic layers, the polymer backbones are aligned parallel to the film plane, with edge-on oriented diketopyrrolopyrrole (DPP) cores. Thicker films resemble a semicrystalline morphology with lamellae consisting of blocks. Such lamellae are typical for polymers crystallizing via Strobl's block-forming model. Our findings indicate that molecular order, molecular orientation, and the morphology of PTzDPPTzF4 copolymer films are tunable by LC order and by varying the film thickness according to the desired application of the particular organic electronic devices.

Scalable Fabrication of Organic Single-Crystalline Wafers for Reproducible TFT Arrays

Building on significant developments in materials science and printing technologies, organic semiconductors (OSCs) promise an ideal platform for the production of printed electronic circuits. However, whether their unique solution-processing capability can facilitate the reliable mass manufacture of integrated circuits with reasonable areal coverage, and to what extent mass production of solution-processed electronic devices would allow substantial reductions in manufacturing costs, remain controversial. In the present study, we successfully manufactured a 4-inch (c.a. 100 mm) organic single-crystalline wafer via a simple, one-shot printing technique, on which 1,600 organic transistors were integrated and characterized. Owing to their single-crystalline nature, we were able to verify remarkably high reliability and reproducibility, with mobilities up to 10 cm² V⁻¹ s⁻¹, a near-zero turn-on voltage, and excellent on-off ratio of approximately 10⁷. This work provides a critical milestone in printed electronics, enabling industry-level manufacturing of OSC devices concomitantly with lowered manufacturing costs.

Freely Suspended, van der Waals Bound Organic Nanometer-Thin Functional Films: Mechanical and Electronic Characterization

Determining the electronic properties of nanoscopic, low-dimensional materials free of external influences is key to the discovery and understanding of new physical phenomena. An example is the suspension of graphene, which has allowed access to their intrinsic charge transport properties. Furthermore, suspending thin films enables their application as membranes, sensors, or resonators, as has been explored extensively. While the suspension of covalently bound, electronically active thin films is well established, semiconducting thin films composed of functional molecules only held together by van der Waals interactions could only be studied supported by a substrate. In the present work, it is shown that by utilizing a surface-crystallization method, electron conductive films with thicknesses of down to 6 nm and planar chiral optical activity can be freely suspended across several hundreds of nanometers. The suspended membranes exhibit a Young's modulus of 2-13 GPa and are electronically decoupled from the environment, as established by temperature-dependent field-effect transistor measurements.

Enhanced photoelectrical response of thermodynamically epitaxial organic crystals at the two-dimensional limit

Owing to strong light-matter interaction, two-dimensional (2D) organic crystal is regarded as promising materials for ultrasensitive photodetectors, however it still received limited success due to degraded photoelectrical response and problems in controllable growth. Here, we find the growth of 2D organic crystal obeys Gibbs-Curie-Wulff law, and develop a seed-epitaxial drop-casting method to grow millimeter-sized 1,4-bis(4-methylstyryl)benzene 2D crystals on SiO₂/Si in a thermodynamically controlled process. On SiO₂/Si, a distinct 2D limit effect is observed, which remarkably enhances internal photoresponsivity compared with bulk crystals. Experiment and calculation show the molecules stack more compactly at the 2D limit, thus better molecular orbital overlap and corresponding changes in the band structure lead to efficient separation and transfer of photo-generated carriers as well as enhanced photo-gating modulation. This work provides a general insight into the growth and the dimension effect of the 2D organic crystal, which is valuable for the application in high-performance photoelectrical devices.

To realize efficient optoelectronic devices based on two-dimensional (2D) organic crystals, optimizing the photoelectrical response and growth of these materials at the 2D limit is vital. Here, the authors report enhanced internal photoresponse in large-area 2D crystals using a novel growth method.

Large-Size Single-Crystal Oligothiophene-Based Monolayers for Field-Effect Transistors

High structural quality of crystalline organic semiconductors is the basis of their superior electrical performance. Recent progress in quasi two-dimensional (2D) organic semiconductor films challenges bulk single crystals because both demonstrate competing charge-carrier mobilities. As the thinnest molecular semiconductors, monolayers offer numerous advantages such as unmatched flexibility and light transparency as well  they are an excellent platform for sensing. Oligothiophene-based materials are among the most promising ones for light-emitting applications because of the combination of efficient luminescence and decent charge-carrier mobility. Here, we demonstrate single-crystal monolayers of unprecedented structural order grown from four alkyl-substituted thiophene and thiophene-phenylene oligomers. The monolayer crystals with lateral dimensions up to 3 mm were grown from the solution on substrates with various surface energies and roughness by drop or spin-casting with subsequent slow solvent evaporation. Our data indicate that 2D crystallization resulting in single-crystal monolayers occurs at the receding gas-solution-substrate contact line. The structural properties of the monolayers were studied by grazing-incidence X-ray diffraction/reflectivity, atomic force and differential interference contrast microscopies, and imaging spectroscopic ellipsometry. These highly ordered monolayers demonstrated an excellent performance in organic field-effect transistors approaching the best values reported for the thiophene or thiophene-phenylene oligomers. Our findings pave the way for efficient monolayer organic electronics highlighting the high potential of simple solution-processing techniques for the growth of large-size single-crystal monolayers with excellent structural order and electrical performance competing against bulk single crystals.

Guided Formation of Large Crystals of Organic and Perovskite Semiconductors by an Ultrasonicated Dispenser and Their Application as the Active Matrix of Photodetectors

The crystallization of organic or perovskite semiconductors reflects the intermolecular interactions and crucially determines the charge transport in opto-electronic devices. In this report, we demonstrate and investigate the use of an ultrasonicated dispenser to guide the formation of crystals of organic and perovskite semiconductors. The moving speed of the dispenser affects the match between the concentration gradient and evaporation rate near the three-phase contact lines and thus the generation of various crystallization morphologies. The mechanism of crystallization is given by a relationship between the calculated concentration gradient profile and the degree of crystal alignment. Highly ordered, aligned crystals are achieved for both organic bis(triisopropylsilylethynyl)-pentacene and perovskite MAPbI₃ semiconductors. Absorption spectra, Raman scattering spectroscopy analysis, and grazing incidence wide-angle X-ray scattering measurement reveal the strong anisotropy of the crystalline structures. The aligned crystals lead to remarkably enhanced electrical performances in an organic thin-film transistor (OTFT) and perovskite photodetector. As a demonstration, we combine the OTFT with photodetectors to achieve an active matrix of normally off, gate-tunable photodetectors that operate under ambient conditions.

Energy barriers at grain boundaries dominate charge carrier transport in an electron-conductive organic semiconductor

Semiconducting organic films that are at the heart of light-emitting diodes, solar cells and transistors frequently contain a large number of morphological defects, most prominently at the interconnects between crystalline regions. These grain boundaries can dominate the overall (opto-)electronic properties of the entire device and their exact morphological and energetic nature is still under current debate. Here, we explore in detail the energetics at the grain boundaries of a novel electron conductive perylene diimide thin film. Via a combination of temperature dependent charge transport measurements and ab-initio simulations at atomistic resolution, we identify that energetic barriers at grain boundaries dominate charge transport in our system. This novel aspect of physics at the grain boundary is distinct from previously identified grain-boundary defects that had been explained by trapping of charges. We furthermore derive molecular design criteria to suppress such energetic barriers at grain boundaries in future, more efficient organic semiconductors.

Synthesis, design and sensing applications of nanostructured ceria-based materials

Cerium-based materials possess redox properties due to the presence of dual valence states of Ce³⁺ and Ce⁴⁺.