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Zhou K, Su H, Chen L, Tang L, Zhu C, Ma C, Tang J, Zeng D. Exposed (111) Plane Engineered of Lead-Free Perovskite Cs 2SnCl 6 Octahedra for DMC Sensing in LIB Electrolyte Leakage Detection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2503337. [PMID: 40364486 DOI: 10.1002/smll.202503337] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2025] [Revised: 05/05/2025] [Indexed: 05/15/2025]
Abstract
Dimethyl carbonate (DMC), as a major component of electrolytes, can be used as a marker for monitoring electrolyte leakage in lithium-ion batteries (LIBs). Herein, lead-free perovskite Cs2SnCl6 octahedra with (111) plane as the exposed surface are synthesized by a simple antisolvent method and the gas sensor based on these octahedra shows excellent adsorption performance for DMC molecules. The response value for 100 ppm DMC is 7.05 and response/recovery time is 82 s/83 s, as well as almost no degradation in performance during a one-month stability test. DFT calculations of the density of states and band structure reveal the adsorption of DMC molecules on perovskite surface. And it is first proposed that the adsorption conformations of DMC molecules have a significant influence on the adsorption energy. In situ infrared absorption spectrometry demonstrates the adsorption and decomposition process of DMC molecules. This mechanism provides crucial insights for the essence of lead-free perovskite gas sensing, while offering the guidance for designing high-performance lead-free perovskite gas sensing materials.
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Affiliation(s)
- Kechen Zhou
- State Key Laboratory of Materials Processing and Die Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan, 430074, P. R. China
| | - Huiyu Su
- State Key Laboratory of Materials Processing and Die Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan, 430074, P. R. China
| | - Liyan Chen
- State Key Laboratory of Materials Processing and Die Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan, 430074, P. R. China
| | - Lu Tang
- State Key Laboratory of Materials Processing and Die Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan, 430074, P. R. China
| | - Chaoqi Zhu
- State Key Laboratory of Materials Processing and Die Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan, 430074, P. R. China
| | - Chaofan Ma
- State Key Laboratory of Materials Processing and Die Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan, 430074, P. R. China
| | - Jiahong Tang
- State Key Laboratory of Materials Processing and Die Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan, 430074, P. R. China
| | - Dawen Zeng
- State Key Laboratory of Materials Processing and Die Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan, 430074, P. R. China
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Tang SC, Li YJ, Yang J, Zhao T, Tian J, Wang YJ, Ji ZY, Li Y, Dai YT, He T, Zhang YW, Emeline AV, Pang Q, Bahnemann DW, Pan JH. Perovskite CsCuCl xBr 3-x Microcrystals: Band Structure, Photochemical Stability, and Photocatalytic Properties. CHEMSUSCHEM 2025; 18:e202402094. [PMID: 39714848 DOI: 10.1002/cssc.202402094] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2024] [Revised: 11/23/2024] [Accepted: 12/19/2024] [Indexed: 12/24/2024]
Abstract
Although Pb-based metal halide perovskites (MHPs) have excellent photoelectric characteristics, its toxicity remains a limiting factor for its widespread application. In the paper, a series of CsCuClxBr3-x (x=1, 2, 3) MHPs microcrystals were developed and their hydrogen evolution performance in ethanol and HX (X=Cl, Br) were also studied. Among them, CsCuCl3 microcrystals exhibit high hydrogen evolution performance in both HX and ethanol, attributed to its longest average lifetime and suitable band structure. Additionally, the effect of different sacrificial agents on photocatalytic hydrogen production indicates that the photogenerated hole (h+) plays a critical role. MHPs can maintain a dynamic equilibrium of dissolution and precipitation in HX saturated aqueous solutions, thereby overcoming the stability issues associated with perovskite. The phase transition of CsCuClxBr3-x during photocatalysis is monitored by XRD technique. CsCuCl3 shows high stability in saturated HCl aqueous solution, and excellent photocatalytic performance with a hydrogen production rate of CsCuCl3 microcrystals reached 103.98 μmol g-1 at 210 min. Our study expands the development prospects of CsCuCl3 in the field of photocatalytic solar fuel generation.
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Affiliation(s)
- Shuang Chao Tang
- College of Environmental Science and Engineering, North China Electric Power University, Beijing, 102206, China
- State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, Guangxi, China
| | - Yan Jie Li
- College of Environmental Science and Engineering, North China Electric Power University, Beijing, 102206, China
- State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, Guangxi, China
| | - Jing Yang
- ASTAR, Inst High Performance Comp IHPC, 1 Fusionopolis Way 16-16 Connexis, Singapore, 138632, Singapore
| | - Ting Zhao
- National Engineering Laboratory for VOCs Pollution Control Material & Technology, University of Chinese Academy of Sciences, Beijing, 101408, China
| | - Jie Tian
- State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, Guangxi, China
| | - Yan Jie Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Zhuo Yu Ji
- College of Environmental Science and Engineering, North China Electric Power University, Beijing, 102206, China
| | - Yu Li
- College of Environmental Science and Engineering, North China Electric Power University, Beijing, 102206, China
| | - Yi Tao Dai
- Key Laboratory of Precision and Intelligent Chemistry, School of Nano Science and Technology, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, 230026, Anhui, China
- Sustainable Energy and Environmental Materials Innovation Center, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, 215123, Jiangsu, China
| | - Tao He
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yong-Wei Zhang
- ASTAR, Inst High Performance Comp IHPC, 1 Fusionopolis Way 16-16 Connexis, Singapore, 138632, Singapore
| | - Alexei V Emeline
- Laboratory "Photonics of Crystals", Saint Petersburg State University, Peterhof, Saint, Petersburg, 198504, Russia
| | - Qi Pang
- College of Chemistry and Chemical Engineering of Guangxi University, Nanning, 530004, China
| | - Detlef W Bahnemann
- Institut für Technische Chemie, Leibniz Universität Hannover, D-30167, Hannover, Germany
- Laboratory "Photoactive Nanocomposite Materials", Saint Petersburg State University, Peterhof, Saint, Petersburg, 198504, Russia
| | - Jia Hong Pan
- College of Environmental Science and Engineering, North China Electric Power University, Beijing, 102206, China
- State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, Guangxi, China
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Qu C, Wu J, Zhu Z, Guan Q, Ye H, Li R, Zhang C, Geng Y, Li H, Xu L, Zhong H, Wang A, Ji C, Wu Z, Luo J. Multiple Interactions in Polar Lead-Free Perovskites toward Highly Stable X-Ray Detection. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025; 12:e2412504. [PMID: 40178311 PMCID: PMC12120703 DOI: 10.1002/advs.202412504] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/08/2024] [Revised: 01/17/2025] [Indexed: 04/05/2025]
Abstract
Lead-free halide perovskites have emerged as a promising class of high-performance "green" X-ray detecting semiconductors due to their nontoxicity and strong X-ray absorption. However, ion migration caused by high operating electric field remains a bottleneck limiting the long-term stability of perovskite X-ray detectors. Herein, by introducing multiple halogen interactions in lead-free perovskites, stable X-ray detection is successfully realized. Specifically, 0D polar bismuth halide perovskites (R/S-BPEA)4Bi2I10 (1R/1S, R/S-BPEA = R/S-1-(4-bromophenyl)ethylammonium) are designed by introducing Br-substituted chiral organic cation BPEA, which exists with the molecular electrostatic forces between the Br atom and neighboring benzene ring and halogen interaction of Br···I. Notably, their introduction improves the activation energy of ion migration, which makes the dark current drift of the X-ray detector as low as 3.25 × 10-8 nA cm-1 s-1 V-1 at 2500 V cm-1. Furthermore, the excellent operational stability under prolonged X-ray irradiation and unchanged device sensitivity after 90 days of exposure to air, further demonstrates the improved stability of perovskites. Meanwhile, the chiral-polar characteristic of the 1R/1S gives them potential for self-powered detection, with a low detection limit of 183 nGy s-1 at zero bias for single-crystal devices. This study opens new avenues for the future development of "green", highly stable, self-powered radiation detectors.
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Affiliation(s)
- Chang Qu
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- College of Chemistry and Materials ScienceFujian Normal UniversityFuzhou350007P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Jianbo Wu
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Zeng‐kui Zhu
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Qianwen Guan
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Huang Ye
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Ruiqing Li
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Chengshu Zhang
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Yaru Geng
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Hang Li
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Lijun Xu
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Haiqing Zhong
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- College of Chemistry and Materials ScienceFujian Normal UniversityFuzhou350007P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Ailin Wang
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- College of Chemistry and Materials ScienceFujian Normal UniversityFuzhou350007P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Chengmin Ji
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Zhenyue Wu
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
| | - Junhua Luo
- State Key Laboratory of Functional Crystals and DevicesFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002P. R. China
- College of Chemistry and Materials ScienceFujian Normal UniversityFuzhou350007P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian350002China
- Fujian CollegeUniversity of Chinese Academy of SciencesFuzhouFujian350002China
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4
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Kim K, Moon T, Kim J. Wide Bandgap Perovskites: A Comprehensive Review of Recent Developments and Innovations. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2407007. [PMID: 40166818 DOI: 10.1002/smll.202407007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2024] [Revised: 02/22/2025] [Indexed: 04/02/2025]
Abstract
Recent advances in wide-bandgap (WBG) perovskite solar cells (PSCs) demonstrate a burgeoning potential to significantly enhance photovoltaic efficiencies beyond the Shockley-Queisser limit for single-junction cells. This review explores the multifaceted improvements in WBG PSCs, focusing on novel compositions, halide substitution strategies, and innovative device architectures. The substitution of iodine with bromine and organic ions such as FA and MA with Cs in the perovskite lattice is emphasized for its effectiveness in achieving higher open-circuit voltages and reduced thermalization losses. Furthermore, the integration of advanced charge transport layers and interface engineering techniques is discussed as critical to minimizing open-circuit voltage (VOC) deficits and improving the photo-stability of these cells. The utilization of WBG PSCs in diverse applications such as semitransparent devices, indoor photovoltaics, and multijunction tandem devices is also explored, addressing both their current limitations and potential solutions. The review culminates in a comprehensive assessment of the current challenges impeding the industrial scale-up of WBG PSC technology and offers a perspective on future research directions aimed at realizing highly efficient and stable WBG PSCs for commercial photovoltaic applications.
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Affiliation(s)
- Kyoungtae Kim
- Department of Chemistry, Kwangwoon University, Seoul, 01897, Republic of Korea
| | - Taeho Moon
- Department of Materials Science and Engineering, Dankook University, Cheonan, 31116, Republic of Korea
| | - Jinhyun Kim
- Department of Chemistry, Kwangwoon University, Seoul, 01897, Republic of Korea
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Li CX, Cho SB, Sohn SH, Kwak DH, Park IK. Full-Color Gamut White Light Emission From Mn-doped Cs 3Cu 2X 5 Nanocrystals via Lattice Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2408468. [PMID: 39905866 DOI: 10.1002/smll.202408468] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2024] [Revised: 01/06/2025] [Indexed: 02/06/2025]
Abstract
Cs3Cu2X5-based lead-free material (X = Cl, Br, and I) nanocrystals (NCs) are promising eco-friendly materials for various optoelectronic applications. Although manganese (Mn2+) ion doping into Cs3Cu2X5 may widen the emission color gamut, incorporating them is challenging because of the robust tetrahedral [CuX4] and triangular [CuX3] structures. This paper addresses this challenge using a lattice engineering strategy, which induces appropriate lattice shrinkage by replacing I- with Cl- in the Cs3Cu2I5 NC structure. The promotion effect of Cl- substitution on the Mn2+ doping is confirmed by structural and chemical analysis, indicating the formation of highly crystalline NCs. The Mn-doping modifies the electronic structures of Cs3Cu2X5 by reducing the band gap energy and forming effective energy transition pathways. The emission range of the NCs is expanded from blue to orange and finally manifest full-color gamut white light emission. The continuous broad spectrum is attributed to the combined blue emission of self-trapped excitons and the yellow-orange emission of the Mn2+ d-d energy transition. A white light-emitting diode with Mn-doped Cs3Cu2X5 NCs as a color conversion layer exhibit stable white emission with CIE coordinates of (0.34, 0.32) and a correlated color temperature of 5010 K, closely matching daylight conditions and is applied as an intelligent artificial sunlight.
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Affiliation(s)
- Chang-Xu Li
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea
| | - Seung-Bum Cho
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea
| | - Sang-Hyun Sohn
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea
| | - Do-Hyun Kwak
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea
| | - Il-Kyu Park
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea
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Jiang K, Yang W, Zhang Z, Zhang Y, Lan J, Chen D, Li W, Fan J. Structurally and Electronically Anisotropic Nature of Bridgman-Grown Cs 3Sb 2Br 9 Perovskite Single Crystal toward Efficient Photodetector. ACS APPLIED MATERIALS & INTERFACES 2025; 17:3631-3643. [PMID: 39815470 DOI: 10.1021/acsami.4c18560] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2025]
Abstract
Cs3Sb2Br9, as a sort of novel lead-free perovskite single crystal, has the merits of high carrier mobility and a long diffusion length. However, the large-sized and high-crystallized Cs3Sb2Br9 single crystals are not easily obtained. Herein, we apply the vertical Bridgman method to grow centimeter-sized Cs3Sb2Br9 single crystal. The temperature-dependent crystal structure of Cs3Sb2Br9 is in situ characterized in the temperature range of 100-400 K. A novel crystallographic and electronic structure anisotropy of the as-grown Cs3Sb2Br9 single crystal along the transmission directions of [100] and [001] is experimentally and theoretically proved. Owing to the layered two-dimensional (2D) structure of Cs3Sb2Br9, quantum confinement effects prolong the lifetime of hot carriers, leading to their accumulation within the Sb-Br plane along the [100] direction, thereby resulting in a higher density of electronic states. Accordingly, the [100] device exhibits a carrier mobility higher than that of the [001] device, with the [100] device mobility being 4 orders of magnitude higher than that of the [001] device at 423 K, showing a remarkable anisotropy. The [100] device also shows responsivity ∼10 times higher than that of the [001] device.
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Affiliation(s)
- Kunlun Jiang
- Institute of New Energy Technology, Jinan University, Guangzhou 510632, China
| | - Wenjian Yang
- Institute of New Energy Technology, Jinan University, Guangzhou 510632, China
| | - Zhaobing Zhang
- Institute of New Energy Technology, Jinan University, Guangzhou 510632, China
| | - Yongli Zhang
- Department of Ecology, College of Life Science and Technology, Jinan University, Guangzhou 510632, China
| | - Jing Lan
- Institute of New Energy Technology, Jinan University, Guangzhou 510632, China
| | - Dehao Chen
- Institute of New Energy Technology, Jinan University, Guangzhou 510632, China
| | - Wenzhe Li
- Institute of New Energy Technology, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
- Guangdong Provincial Key Laboratory of Nanophotonic Manipulation, Jinan University, Guangzhou 511443, China
| | - Jiandong Fan
- Institute of New Energy Technology, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
- Guangdong Provincial Key Laboratory of Nanophotonic Manipulation, Jinan University, Guangzhou 511443, China
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Qu J, Cheng H, Lan H, Zheng B, Luo Z, Yang X, Yi X, Wu G, Chen S, Pan A. Space-Confined Growth of Ultrathin P-Type GeTe Nanosheets for Broadband Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309391. [PMID: 38456381 DOI: 10.1002/smll.202309391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Revised: 02/18/2024] [Indexed: 03/09/2024]
Abstract
As p-type phase-change degenerate semiconductors, crystalline and amorphous germanium telluride (GeTe) exhibit metallic and semiconducting properties, respectively. However, the massive structural defects and strong interface scattering in amorphous GeTe films significantly reduce their performance. In this work, two-dimensional (2D) p-type GeTe nanosheets are synthesized via a specially designed space-confined chemical vapor deposition (CVD) method, with the thickness of the GeTe nanosheets reduced to 1.9 nm. The space-confined CVD method improves the crystallinity of ultrathin GeTe by lowering the partial pressure of the reactant gas, resulting in GeTe nanosheets with excellent p-type semiconductor properties, such as a satisfactory on/off ratio of 105. Temperature-dependent electrical measurements demonstrate that variable-range hopping and optical-phonon-assisted hopping mechanisms dominate transport behavior at low and high temperatures, respectively. GeTe devices exhibit significantly high responsivity (6589 and 2.2 A W-1 at 633 and 980 nm, respectively) and detectivity (1.67 × 1011 and 1.3 × 108 Jones at 633 and 980 nm, respectively), making them feasible for broadband photodetectors in the visible to near-infrared range. Furthermore, the fabricated GeTe/WS2 diode exhibits a rectification ratio of 103 at zero gate voltage. These satisfactory p-type semiconductor properties demonstrate that ultrathin GeTe exhibits enormous potential for applications in optoelectronic interconnection circuits.
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Affiliation(s)
- Junyu Qu
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Haodong Cheng
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Huiping Lan
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Biyuan Zheng
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ziyu Luo
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xin Yang
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xiao Yi
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Guangcheng Wu
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Shula Chen
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Anlian Pan
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan, 410081, P. R. China
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Zhao Z, Fan Q, Liu Y, Rong H, Ni H, Wei L, Zhao X, Luo J, Sun Z. Lead-Free Bismuth-Based Perovskite X-ray Detector with High Sensitivity and Low Detection Limit. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38283-38289. [PMID: 39011746 DOI: 10.1021/acsami.4c08648] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
Bismuth-based halide perovskites have shown great potential for direct X-ray detection, attributable to their nontoxicity and advantages in detection sensitivity and spatial resolution. However, the practical application of such materials still faces the critical challenge of combining both high sensitivity and low detection limits. Here, we report a new type of zero-dimensional (0D) perovskite (HIS)BiI5 (1, where HIS2+ = histamine) with high sensitivity and a low detection limit. Structurally, the strong N-H···I hydrogen bonds between HIS2+ cations and inorganic frameworks enhance the rigidity of the structure and diminish the intermolecular distance between adjacent inorganic [Bi2I10]4- dimers. By virtue of such structural merits, single crystal 1 exhibits excellent physical properties perpendicular to both the (001) and (010) faces. Perpendicular to the (010) face, 1 exhibited a high electrical resistivity (2.31 × 1011 Ω cm) and a large carrier mobility-lifetime product (μτ) (2.81 × 10-4 cm2 V-1) under X-ray illumination. Benefiting from these superior physical properties, it demonstrates an excellent X-ray detection capability with a sensitivity of approximately 103 μC Gyair-1 cm-2 and a detection limit of 36 nGyair s-1 in both directions perpendicular to the (001) and (010) crystal faces. These results provide a promising candidate material for the development of new, lead-free, high-performance X-ray detectors.
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Affiliation(s)
- Zihao Zhao
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Qingshun Fan
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Yi Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Hao Rong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Huaimin Ni
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Linjie Wei
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Xianmei Zhao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Junhua Luo
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, People's Republic of China
| | - Zhihua Sun
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, People's Republic of China
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9
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Zhou X, Xu B, Zhao X, Lv H, Qiao D, Peng X, Shi F, Chen M, Hao Q. In Situ Growth Method for Large-Area Flexible Perovskite Nanocrystal Films. MATERIALS (BASEL, SWITZERLAND) 2024; 17:3550. [PMID: 39063842 PMCID: PMC11278859 DOI: 10.3390/ma17143550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2024] [Revised: 07/08/2024] [Accepted: 07/15/2024] [Indexed: 07/28/2024]
Abstract
Metal halide perovskites have shown unique advantages compared with traditional optoelectronic materials. Currently, perovskite films are commonly produced by either multi-step spin coating or vapor deposition techniques. However, both methods face challenges regarding large-scale production. Herein, we propose a straightforward in situ growth method for the fabrication of CsPbBr3 nanocrystal films. The films cover an area over 5.5 cm × 5.5 cm, with precise thickness control of a few microns and decent uniformity. Moreover, we demonstrate that the incorporation of magnesium ions into the perovskite enhances crystallization and effectively passivates surface defects, thereby further enhancing luminous efficiency. By integrating this approach with a silicon photodiode detector, we observe an increase in responsivity from 1.68 × 10-2 A/W to 3.72 × 10-2 A/W at a 365 nm ultraviolet wavelength.
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Affiliation(s)
- Xingting Zhou
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China (H.L.); (Q.H.)
| | - Bin Xu
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China (H.L.); (Q.H.)
| | - Xue Zhao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China (H.L.); (Q.H.)
| | - Hongyu Lv
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China (H.L.); (Q.H.)
| | - Dongyang Qiao
- Laboratory of Science and Technology on Integrated Logistics Support, National University of Defense Technology, Changsha 410073, China; (D.Q.); (F.S.)
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
| | - Xing Peng
- Laboratory of Science and Technology on Integrated Logistics Support, National University of Defense Technology, Changsha 410073, China; (D.Q.); (F.S.)
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
| | - Feng Shi
- Laboratory of Science and Technology on Integrated Logistics Support, National University of Defense Technology, Changsha 410073, China; (D.Q.); (F.S.)
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
| | - Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China (H.L.); (Q.H.)
- Laboratory of Science and Technology on Integrated Logistics Support, National University of Defense Technology, Changsha 410073, China; (D.Q.); (F.S.)
| | - Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China (H.L.); (Q.H.)
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10
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Zhou L, Zhou S, Liu X, Ma J, Zhang T, Li K, Chang Y, Shen W, Li M, He R. Embedding Te 4+ into Sn 4+-Based Metal Halide To Passivate Structure Defects for High-Performance Light-Emitting Application. Inorg Chem 2024; 63:10335-10345. [PMID: 38768637 DOI: 10.1021/acs.inorgchem.4c01185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Low-dimensional lead-halide hybrids are an emerging class of optical functional material but suffer the problems of toxicity and poor air stability. Among lead-free metal halides, tin(IV)-based metal halides are promising optoelectronic materials due to their robust structure and environmental friendliness. However, their photoluminescence (PL) properties are poor, and the underlying mechanisms are still elusive. Herein, a stable Sn4+-based halide hybrid, (C4H7N2)2SnCl6, was developed, which however exhibits poor PL properties at room temperature (RT) due to the lattice defects and the robust crystal structure. To enhance its PL efficiency, the Te4+ ion with a stereoactive 5s2 lone pair has been introduced into the lattice. As a result, Te4+-doped (C4H7N2)2SnCl6 displays broadband orange emission (∼640 nm) with a PL efficiency of ∼46% at RT. Interestingly, Te4+-doped (C4H7N2)2SnCl6 shows triple emission bands at 80 K, which could be due to the synergistic effect of the organic cations and the self-trapped state induced by Te4+. Additionally, high-performance white light-emitting diodes were prepared using Te4+-doped (C4H7N2)2SnCl6, revealing the potential of this material for lighting applications. This study provides new insight into the PL mechanism of Sn4+-based metal-halide hybrids and thus facilitates the design and development of eco-friendly light-emitting metal halides.
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Affiliation(s)
- Lei Zhou
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China
| | - Shuigen Zhou
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China
| | - Xiaowei Liu
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China
| | - Junhao Ma
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China
| | - Ting Zhang
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China
| | - Kailei Li
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China
| | - Yuanyuan Chang
- Institute of Materials Science and Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Wei Shen
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China
| | - Ming Li
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China
| | - Rongxing He
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China
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11
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Zhang B, Lei G, You S, Zhao W, Liu H. DFT Investigation of Structural Stability, Optical Properties, and PCE for All-Inorganic Cs x(Pb/Sn) yX z Halide Perovskites. Inorg Chem 2024; 63:3303-3316. [PMID: 38329057 DOI: 10.1021/acs.inorgchem.3c03595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Employing all-inorganic perovskites as light harvesters has recently drawn increasing attention owing to the strong-bonded inorganic components in the crystal. To achieve the systematic and comprehensive understanding for the structures and properties of Csx(Pb/Sn)yXz (X = F, Cl, Br, I) perovskites, this work provides the comparison details about crystal structures, optical properties, electronic structures and power conversion efficiency (PCE) of 18 perovskites. The suitable band gaps are detected in CsSnCl3-Pm3̅m (0.96 eV), γ-CsPbI3-Pnma (1.75 eV), and CsPbBr3-Pm3̅m (1.78 eV), facilitating the conversion from absorbing photon energy to generating hole-electron pairs. γ-CsPbI3-Pnma and CsSnI3-P4/mbm show superior visible-absorption performance depending on their higher absorption coefficient (α); meanwhile, strong peaks can be observed in the real part (Re) of photoconductivity of CsPbBr3-Pbnm, γ-CsPbI3-Pnma, and CsSnI3-P4/mbm in the visible-light range, implying their better photoelectric conversion abilities. The perovskite/tungsten disulfide (WS2) heterojunctions are constructed to calculate the PCE. Although just the PCE result (14.43%) of CsSnI3-Pnma/WS2 is reluctantly competitive, the predictions of PCEs indicate that the PCE of PSCs (perovskite solar cells) can be improved by not only regulating the perovskite to upgrade its own performance but also designing the PSC structure reasonably including the selection of appropriate ETL/HTL (electron/hole transport layer), etc.
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Affiliation(s)
- Bo Zhang
- School of Materials Science and Engineering, Tianjin Chengjian University, Tianjin 300384, PR China
- Tianjin Key Laboratory of Building Green Functional Materials, Tianjin 300384, PR China
| | - Guanghui Lei
- School of Materials Science and Engineering, Tianjin Chengjian University, Tianjin 300384, PR China
- Tianjin Key Laboratory of Building Green Functional Materials, Tianjin 300384, PR China
| | - Shuyue You
- School of Materials Science and Engineering, Tianjin Chengjian University, Tianjin 300384, PR China
- Tianjin Key Laboratory of Building Green Functional Materials, Tianjin 300384, PR China
| | - Wei Zhao
- School of Materials Science and Engineering, Tianjin Chengjian University, Tianjin 300384, PR China
- Tianjin Key Laboratory of Building Green Functional Materials, Tianjin 300384, PR China
| | - Hongli Liu
- School of Materials Science and Engineering, Tianjin Chengjian University, Tianjin 300384, PR China
- Tianjin Key Laboratory of Building Green Functional Materials, Tianjin 300384, PR China
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12
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Zhao YY, Sheng SY. The electronic and optical properties of Cs2BX6 (B = Zr, Hf) perovskites with first-principle method. PLoS One 2023; 18:e0292399. [PMID: 38134027 PMCID: PMC10745151 DOI: 10.1371/journal.pone.0292399] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Accepted: 09/19/2023] [Indexed: 12/24/2023] Open
Abstract
The electronic structures and absorption properties of Cs2BX6 halide compounds are investigated with first principle calculation and exchange correlation functional of GGA-PBE. Pressure and halogen ion doping are employed to regulate band gap. All materials suffer transition from indirect to direct band gap semiconductors but with different phase transition pressure. Structural and band structure calculating results show that the value of phase transition pressure is mainly determined by the volume of octahedron. When the volume of vacancy octahedron is much less than B-ion octahedron, the lowest band point of B-d orbitals transforms to Γ point, then the indirect semiconductors transform into direct band gap semiconductors. Calculating results of optical absorption implied that the systems have obvious blue shift, which result in the optical properties reduced. Based on suitable band gap and higher absorption coefficient, Cs2ZrI4Br2 can be an ideal candidate for perovskites solar cells.
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Affiliation(s)
- Yang-Yang Zhao
- Department of basic education, Criminal Investigation Police University of China, Shenyang, Liaoning, China
| | - Si-Yuan Sheng
- Department of Physics, Shenyang University of Chemical Technology, Shenyang, Liaoning, China
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13
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Gassara M, Hemasiri NH, Kazim S, Costantino F, Naïli H, Ahmad S. Uncovering the Role of Electronic Doping in Lead-free Perovskite (CH 3 NH 3 ) 2 CuCl 4-x Br x and Solar Cells Fabrication. CHEMSUSCHEM 2023; 16:e202202313. [PMID: 37075747 DOI: 10.1002/cssc.202202313] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/28/2023] [Indexed: 05/03/2023]
Abstract
Lead halide perovskites are attractive pigments to fabricate solar cells in the laboratory, owing to their high power conversion efficiency. However, given the presence of Pb, such materials also have a high level of toxicity and are carcinogenic for humans and aquatic life. Arguably, this hampers their acceptability for immediate commercialization. This study entails the synthesis, optoelectronic properties, and photovoltaic parameters of two-dimensional copper-based perovskites as an environmentally benign alternative to lead-based perovskites. The perovskites - (CH3 NH3 )2 CuCl4-x Brx with x=0.3 and 0.66 - are derivatives of the stable (CH3 NH3 )2 CuCl4 . The single crystals and powders diffractograms suggest compositions with variations in Cl/Br ratio and dissimilar bromine localization in the inorganic framework. The copper mixed halide perovskite exhibits a narrow absorption with a bandgap of 2.54-2.63 eV related to the halide ratio disparity (crystal color variation). These findings demonstrate the impact of halides to optimize the stability of methylammonium copper perovskites and provide an effective pathway to design eco-friendly perovskites for optoelectronic applications.
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Affiliation(s)
- Mahdi Gassara
- Laboratoire Physico-Chimie de l'Etat Solide, Département de Chimie, Faculté des Sciences de Sfax, Université de Sfax, B.P. 1171, 3000, Sfax, Tunisia
- BCMaterials, Basque Center for Materials, Applications, and Nanostructures, Bld. Martina Casiano, UPV/EHU Science Park, Barrio Sarriena s/n, 48940, Leioa, Spain
| | - Naveen Harindu Hemasiri
- BCMaterials, Basque Center for Materials, Applications, and Nanostructures, Bld. Martina Casiano, UPV/EHU Science Park, Barrio Sarriena s/n, 48940, Leioa, Spain
| | - Samrana Kazim
- BCMaterials, Basque Center for Materials, Applications, and Nanostructures, Bld. Martina Casiano, UPV/EHU Science Park, Barrio Sarriena s/n, 48940, Leioa, Spain
- IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Spain
| | - Ferdinando Costantino
- Department of Chemistry Biology and Biotechnologies, University of Perugia, Via Elce di Sotto 8, 06123, Perugia, Italy
| | - Houcine Naïli
- Laboratoire Physico-Chimie de l'Etat Solide, Département de Chimie, Faculté des Sciences de Sfax, Université de Sfax, B.P. 1171, 3000, Sfax, Tunisia
| | - Shahzada Ahmad
- BCMaterials, Basque Center for Materials, Applications, and Nanostructures, Bld. Martina Casiano, UPV/EHU Science Park, Barrio Sarriena s/n, 48940, Leioa, Spain
- IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Spain
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14
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Seok H, Son S, Jathar SB, Lee J, Kim T. Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network. SENSORS (BASEL, SWITZERLAND) 2023; 23:3118. [PMID: 36991829 PMCID: PMC10058286 DOI: 10.3390/s23063118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 03/11/2023] [Accepted: 03/13/2023] [Indexed: 06/19/2023]
Abstract
Memristors mimic synaptic functions in advanced electronics and image sensors, thereby enabling brain-inspired neuromorphic computing to overcome the limitations of the von Neumann architecture. As computing operations based on von Neumann hardware rely on continuous memory transport between processing units and memory, fundamental limitations arise in terms of power consumption and integration density. In biological synapses, chemical stimulation induces information transfer from the pre- to the post-neuron. The memristor operates as resistive random-access memory (RRAM) and is incorporated into the hardware for neuromorphic computing. Hardware composed of synaptic memristor arrays is expected to lead to further breakthroughs owing to their biomimetic in-memory processing capabilities, low power consumption, and amenability to integration; these aspects satisfy the upcoming demands of artificial intelligence for higher computational loads. Among the tremendous efforts toward achieving human-brain-like electronics, layered 2D materials have demonstrated significant potential owing to their outstanding electronic and physical properties, facile integration with other materials, and low-power computing. This review discusses the memristive characteristics of various 2D materials (heterostructures, defect-engineered materials, and alloy materials) used in neuromorphic computing for image segregation or pattern recognition. Neuromorphic computing, the most powerful artificial networks for complicated image processing and recognition, represent a breakthrough in artificial intelligence owing to their enhanced performance and lower power consumption compared with von Neumann architectures. A hardware-implemented CNN with weight control based on synaptic memristor arrays is expected to be a promising candidate for future electronics in society, offering a solution based on non-von Neumann hardware. This emerging paradigm changes the computing algorithm using entirely hardware-connected edge computing and deep neural networks.
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Affiliation(s)
- Hyunho Seok
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Shihoon Son
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sagar Bhaurao Jathar
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jaewon Lee
- School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Taesung Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
- School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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15
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Xiao Y, Jiang B, Zhang Z, Ke S, Jin Y, Wen X, Ye C. A review of memristor: material and structure design, device performance, applications and prospects. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2162323. [PMID: 36872944 PMCID: PMC9980037 DOI: 10.1080/14686996.2022.2162323] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/16/2022] [Revised: 12/09/2022] [Accepted: 12/21/2022] [Indexed: 06/18/2023]
Abstract
With the booming growth of artificial intelligence (AI), the traditional von Neumann computing architecture based on complementary metal oxide semiconductor devices are facing memory wall and power wall. Memristor based in-memory computing can potentially overcome the current bottleneck of computer and achieve hardware breakthrough. In this review, the recent progress of memory devices in material and structure design, device performance and applications are summarized. Various resistive switching materials, including electrodes, binary oxides, perovskites, organics, and two-dimensional materials, are presented and their role in the memristor are discussed. Subsequently, the construction of shaped electrodes, the design of functional layer and other factors influencing the device performance are analyzed. We focus on the modulation of the resistances and the effective methods to enhance the performance. Furthermore, synaptic plasticity, optical-electrical properties, the fashionable applications in logic operation and analog calculation are introduced. Finally, some critical issues such as the resistive switching mechanism, multi-sensory fusion, system-level optimization are discussed.
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Affiliation(s)
- Yongyue Xiao
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Bei Jiang
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Zihao Zhang
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Shanwu Ke
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Yaoyao Jin
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Xin Wen
- Faculty of Chemical Technology and Engineering, West Pomeranian University of Technology in Szczecin, Szczecin, Poland
| | - Cong Ye
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
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16
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Meng W, Wang C, Li Y, Hu G, Sui S, Xu G, Peng M, Deng Z. Synthesis of Efficient and Stable Tetrabutylammonium Copper Halides with Dual Emissions for Warm White Light-Emitting Diodes. Chemistry 2023; 29:e202202675. [PMID: 36599805 DOI: 10.1002/chem.202202675] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/27/2022] [Revised: 12/23/2022] [Accepted: 12/27/2022] [Indexed: 01/06/2023]
Abstract
In order to achieve a high color-rendering index (CRI) and low correlated color temperature (CCT) indoor lighting, single-component phosphors with broad-band dual emission are in high demand for white-light-emitting diodes (WLEDs). However, phosphors with such fluorescent properties are rare at present. Herein, we report a facile solid-state chemical method for the synthesis of single-component phosphor with broad-band emission and a large Stokes shift that can meet the requirements of future white-light sources. These new tetrabutylammonium copper halides phosphors have excellent warm white emission characteristics, and their luminescence peaks are located at 494 and 654 nm. The optimized photoluminescence (PL) quantum yield can reach 93.7 %. The typical CIE coordinate of the as-fabricated WLED is at (0.3620, 0.3731) with a CRI of 89 and low CCT of 4516 K.
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Affiliation(s)
- Wen Meng
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China
| | - Chuying Wang
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China
| | - Yacong Li
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China
| | - Guangcai Hu
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China
| | - Shiqi Sui
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China
| | - Guangyong Xu
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China
| | - Min Peng
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China
| | - Zhengtao Deng
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, Jiangsu, 210023, P. R. China
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17
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Kibbou M, Haman Z, Essaoudi I, Ainane A. Designing new halide double perovskite materials Rb2AgGaX6 (X: Br, Cl) with direct band gaps and high power conversion efficiency. J SOLID STATE CHEM 2023. [DOI: 10.1016/j.jssc.2022.123698] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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18
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Zhao YY, Sheng SY. The electronic and optical properties of Cs 2 Ti 1-xB xI 6(B=Sn, Te, Se) with first principle method. Mol Phys 2022. [DOI: 10.1080/00268976.2022.2129785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/07/2022]
Affiliation(s)
- Yang-Yang Zhao
- Department of Basic Education, Criminal Investigation Police University of China, Shen yang, People's Republic of China
| | - Si-Yuan Sheng
- Department of Physics, Shenyang University of Chemical Technology, Shen yang, People's Republic of China
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Chen Y, Zeng R, Wei Q, Zhang S, Luo B, Chen C, Zhu X, Cao S, Zou B, Zhang JZ. Competing Energy Transfer-Modulated Dual Emission in Mn 2+-Doped Cs 2NaTbCl 6 Rare-Earth Double Perovskites. J Phys Chem Lett 2022; 13:8529-8536. [PMID: 36067065 DOI: 10.1021/acs.jpclett.2c02491] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A2BIBIIIX6 double perovskites are promising materials due to their outstanding photoelectronic properties and excellent stability in the environment. Herein, we synthesized Mn2+:Cs2NaTbCl6 with dual emission through a solvothermal method for the first time. Mn2+:Cs2NaTbCl6 double perovskites exhibit excellent environmental stability and high photoluminescence quantum yields (PLQYs). The Cs2NaTbCl6 was successfully doped with Mn2+ in two modes: at Mn-feeding concentrations below 1%, Mn2+ first tend to insert into the interstitial void, but if the Mn-feeding concentration exceeds 1%, Mn2+ will further substitute Na+ site of the Cs2NaTbCl6 lattice and thus both two doping modes coexist. After Mn2+ doping, efficient energy transfer from the 5D4 level of Tb3+ ions to the 4T1 level of Mn2+ ions occurs, resulting in tunable dual emission from the Tb3+5D4 → 7FJ=6,5,4,3 transition and Mn2+4T1 → 6A1 transition. Further, LED based on the Mn2+:Cs2NaTbCl6 double perovskites exhibits excellent performance and stability. This work demonstrates a strategy to achieve novel lanthanide-based double perovskites with potential applications in photonics.
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Affiliation(s)
- Yuanjie Chen
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Ruosheng Zeng
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Qilin Wei
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Shuai Zhang
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Binbin Luo
- Department of Chemistry and Key Laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province, Shantou University, Shantou, Guangdong 515063, China
| | - Canxu Chen
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Xiaoshan Zhu
- Department of Electrical and Biomedical Engineering, University of Nevada Reno, Reno, Nevada 89557, United States
| | - Sheng Cao
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Bingsuo Zou
- School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Jin Zhong Zhang
- Department of Chemistry and Biochemistry, University of California, Santa Cruz, California 95064, United States
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Liu M, Zhao R, Sun F, Zhang P, Zhang R, Chen Z, Li S. Wavelength-Tuneable Near-Infrared Luminescence in Mixed Tin-Lead Halide Perovskites. Front Chem 2022; 10:887983. [PMID: 35711964 PMCID: PMC9194474 DOI: 10.3389/fchem.2022.887983] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2022] [Accepted: 05/16/2022] [Indexed: 11/24/2022] Open
Abstract
Near-infrared light-emitting diodes (NIR-LEDs) are widely used in various applications such as night-vision devices, optical communication, biological imaging and optical diagnosis. The current solution-processed high-efficiency perovskite NIR-LEDs are typically based on CsPbI3 and FAPbI3 with emission peaks being limited in the range of 700–800 nm. NIR-LEDs with longer emission wavelengths near to 900 nm can be prepared by replacing Pb with Sn. However, Sn-based perovskite LEDs usually exhibit a low efficiency owing to the high concentration of Sn-related defects and the rapid oxidation of Sn2+ to Sn4+, which further induces the device degradation. These problems can be solved by rationally adjusting the ratio between Pb content with Sn. Mixed Sn-Pb halide perovskites with a smaller bandgap and superior stability than pure Sn-based perovskites are promising candidates for manufacturing next-generation NIR emitters. In this study, we systematically investigated the optical properties of a family of hybrid Sn and Pb iodide compounds. The emission spectra of the mixed Sn-Pb halide perovskites were tuned by changing the Sn:Pb ratio. Consequently, the peak emission wavelength red-shifted from 710 nm to longer than 950 nm. The absorption and photoluminescence emission properties associated with different compositions were compared, and the results demonstrated the potential of MA- and FA-based mixed Sn-Pb halide perovskites for preparing low-cost and efficient NIR-LEDs. In addition, we clarified the influence of cations on the bandgap bowing effect and electronic properties of mixed Sn-Pb halide perovskites.
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Affiliation(s)
- Meiyue Liu
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Ru Zhao
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Fuhao Sun
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Putao Zhang
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Rui Zhang
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Zeng Chen
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
| | - Shengjun Li
- Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, China
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21
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Heng HY, Rosli MM, Wong QA, Anizaim AH, Abdullah M, Ibrahim AR. Single crystal, a lead-free hybrid organic-inorganic perovskite material: {[(C6H5)NH3]+}4.I.[BiI6]3-.H2O with optical and third-order nonlinear properties. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123181] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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22
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Castillo-Ruiz EA, Garcia-Gutierrez DF, Garcia-Gutierrez DI. High-yield synthesis of CsPbBr 3nanoparticles: diphenylphosphine as a reducing agent and its effect in Pb-seeding nucleation and growth. NANOTECHNOLOGY 2022; 33:155604. [PMID: 34965515 DOI: 10.1088/1361-6528/ac46d8] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Accepted: 12/28/2021] [Indexed: 06/14/2023]
Abstract
Based on the reported nucleation mechanisms for CsPbX3and II-VI/IV-VI quantum dots, CsPbBr3nanoparticles with a higher reaction-yield (up to 393% mass-increment) were synthetized by the hot-injection method. The introduction of diphenylphosphine (DPP) as a reducing agent improved nanoparticle nucleation and growth, giving out evidence for Pb-seeding in CsPbBr3nanoparticles formation. Additionally, a clear influence of the DPP in a CsPbBr3-Cs4PbBr6incomplete phase transformation was observed, marked by the appearance of several PbBr2nanoparticles. This indicated the need for an improved ratio between the stabilizing agents and the precursors, due to the increased number of nucleation sites produced by DPP. The resulting CsPbBr3nanoparticles showed high quality, as they displayed 70%-90% photoluminescence quantum yield; narrow size distribution with an average nanoparticle size of∼10 nm; and the characteristic cubic morphology reported in previous works. This increment in CsPbBr3nanoparticles' reaction yield will contribute to making them a more attractive option for different optoelectronic applications.
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Affiliation(s)
- Eder A Castillo-Ruiz
- Universidad Autónoma de Nuevo León, UANL, Facultad de Ingeniería Mecánica y Eléctrica, FIME, Av. Universidad S/N, Cd. Universitaria, San Nicolás de los Garza, Nuevo León, C.P. 66450, Mexico
- Universidad Autónoma de Nuevo León, UANL, Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología, CIIDIT, Apodaca, Nuevo León, C.P. 66628, Mexico
| | - Diana F Garcia-Gutierrez
- Universidad Autónoma de Nuevo León, UANL, Facultad de Ingeniería Mecánica y Eléctrica, FIME, Av. Universidad S/N, Cd. Universitaria, San Nicolás de los Garza, Nuevo León, C.P. 66450, Mexico
- Universidad Autónoma de Nuevo León, UANL, Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología, CIIDIT, Apodaca, Nuevo León, C.P. 66628, Mexico
| | - Domingo I Garcia-Gutierrez
- Universidad Autónoma de Nuevo León, UANL, Facultad de Ingeniería Mecánica y Eléctrica, FIME, Av. Universidad S/N, Cd. Universitaria, San Nicolás de los Garza, Nuevo León, C.P. 66450, Mexico
- Universidad Autónoma de Nuevo León, UANL, Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología, CIIDIT, Apodaca, Nuevo León, C.P. 66628, Mexico
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23
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Liu GN, Li MK, Xu RD, Zhang NN, Quan XJ, Qian BJ, Lu YH, Li C. A halogen bonding assembled hybrid copper halide framework as a promising hypotoxicity photodetector. Inorg Chem Front 2022. [DOI: 10.1039/d2qi01441f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Abstract
The first halogen bonding assembled three-dimensional hybrid copper iodide was obtained by a facile and sustainable “All-in-One” synthesis strategy and shows great application potential as a hypotoxicity photodetector.
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Affiliation(s)
- Guang-Ning Liu
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, PR China
| | - Ming-Kun Li
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, PR China
| | - Rang-Dong Xu
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, PR China
| | - Ning-Ning Zhang
- College of Chemistry and Chemical Engineering, Liaocheng University, Liaocheng 252059, PR China
| | - Xin-Jiao Quan
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, PR China
| | - Bing-Jing Qian
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, PR China
| | - Yi-Han Lu
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, PR China
| | - Cuncheng Li
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, PR China
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24
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Chen R, Shen L, Zheng L, Zhu T, Liu Y, Liu L, Zheng J, Gong X. Two-/Three-Dimensional Perovskite Bilayer Thin Films Post-Treated with Solvent Vapor for High-Performance Perovskite Photovoltaics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:49104-49113. [PMID: 34613704 DOI: 10.1021/acsami.1c15735] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Perovskite photovoltaics (PPVs) using three-dimensional (3D) perovskites incorporated with two-dimensional (2D) perovskites have drawn great concentration in both academic and industrial sectors. Here, we report high performance of PPVs based on the 2D/3D perovskite bilayer thin film post-annealed with solvent vapor. The 2D/3D perovskite bilayer thin film post-annealed with solvent vapor possesses enlarged crystal size and crystallinity and blue-shifted photoluminescence compared to a 3D MAPbI3 thin film. Moreover, compared to the PPVs based on a 3D perovskite thin film, enlarged built-in potential, suppressed charge carrier recombination, boosted charge transport, and reduced charge carrier extraction time are observed from the PPVs based on the 2D/3D perovskite bilayer thin film post-annealed with solvent vapor. As a result, perovskite solar cells exhibit a power conversion efficiency of 22.13% and dramatically enhanced stability, and perovskite photodetectors show a photoresponsivity of 1.38 AW-1, detectivity of 6.52 × 1014 cm Hz1/2 W-1, and linear dynamic range of over 167 dB at room temperature. These results demonstrate that we develop a simple method to approach high-performance PPVs by the 2D/3D perovskite bilayer thin film.
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Affiliation(s)
- Rui Chen
- School of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
| | - Lening Shen
- School of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
| | - Luyao Zheng
- School of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
| | - Tao Zhu
- School of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
| | - Yanghe Liu
- School of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
| | - Lei Liu
- School of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
| | - Jie Zheng
- Department of Chemical, Biomolecular and Corrosion Engineering, College of Engineering and Polymer Science, The University of Akron, Akron, Ohio 44325, United States
| | - Xiong Gong
- School of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325, United States
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25
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Peng H, Wang X, Zhang Z, Tian Y, Xiao Y, Hu J, Wang J, Zou B. Bulk assembly of a 0D organic tin(ii)chloride hybrid with high anti-water stability. Chem Commun (Camb) 2021; 57:8162-8165. [PMID: 34318799 DOI: 10.1039/d1cc02814f] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
A lead-free compound, (TBAC)SnCl3 (TBAC = tetrabutylammonium chloride), with high anti-water stability was reported, which can be stable in water for 24 hours. Upon photoexcitation, this compound exhibits a green photoluminescence (PL) centered at 523 nm with a larger Stokes shift of 260 nm at room temperature (RT), stemming from self-trapped exciton (STE) emission.
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Affiliation(s)
- Hui Peng
- Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
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26
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Yang D, Zhang G, Lai R, Cheng Y, Lian Y, Rao M, Huo D, Lan D, Zhao B, Di D. Germanium-lead perovskite light-emitting diodes. Nat Commun 2021; 12:4295. [PMID: 34257298 PMCID: PMC8277869 DOI: 10.1038/s41467-021-24616-5] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2021] [Accepted: 06/25/2021] [Indexed: 02/06/2023] Open
Abstract
Reducing environmental impact is a key challenge for perovskite optoelectronics, as most high-performance devices are based on potentially toxic lead-halide perovskites. For photovoltaic solar cells, tin-lead (Sn-Pb) perovskite materials provide a promising solution for reducing toxicity. However, Sn-Pb perovskites typically exhibit low luminescence efficiencies, and are not ideal for light-emitting applications. Here we demonstrate highly luminescent germanium-lead (Ge-Pb) perovskite films with photoluminescence quantum efficiencies (PLQEs) of up to ~71%, showing a considerable relative improvement of ~34% over similarly prepared Ge-free, Pb-based perovskite films. In our initial demonstration of Ge-Pb perovskite LEDs, we achieve external quantum efficiencies (EQEs) of up to ~13.1% at high brightness (~1900 cd m-2), a step forward for reduced-toxicity perovskite LEDs. Our findings offer a new solution for developing eco-friendly light-emitting technologies based on perovskite semiconductors.
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Affiliation(s)
- Dexin Yang
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China.
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou, China.
| | - Guoling Zhang
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China
| | - Runchen Lai
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China
| | - Yao Cheng
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou, China
| | - Yaxiao Lian
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China
| | - Min Rao
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou, China
| | - Dexuan Huo
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou, China
| | - Dongchen Lan
- College of Electrical Engineering, Zhejiang University, Hangzhou, China
| | - Baodan Zhao
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China
- Key Laboratory of Excited-State Materials of Zhejiang Province, Zhejiang University, Hangzhou, China
- Cavendish Laboratory, University of Cambridge, Cambridge, United Kingdom
| | - Dawei Di
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China.
- Key Laboratory of Excited-State Materials of Zhejiang Province, Zhejiang University, Hangzhou, China.
- Cavendish Laboratory, University of Cambridge, Cambridge, United Kingdom.
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27
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Ma J, Wang H, Li D. Recent Progress of Chiral Perovskites: Materials, Synthesis, and Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008785. [PMID: 34028888 DOI: 10.1002/adma.202008785] [Citation(s) in RCA: 111] [Impact Index Per Article: 27.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Revised: 02/03/2021] [Indexed: 05/27/2023]
Abstract
Chiral materials with intrinsic inversion-symmetric structures possess many unique physicochemical features, including circular dichroism, circularly polarized photoluminescence, nonlinear optics, ferroelectricity, and spintronics. Halide perovskites have attracted considerable attention owing to their excellent optical and electrical properties, which are particularly suitable for realizing high power-conversion efficiency in solar cells. Recent studies have shown that chirality can be transferred from chiral organic ligands into halide perovskites and the resultant chiral perovskites combine the advantages of both chiral materials and halide perovskites; this provides an ideal platform to design next-generation optoelectronic and spintronic devices. In this progress report, the most recent advances are summarized in various chemical structures of chiral perovskites, their synthesis strategies, chirality generation mechanisms, and physical properties. Furthermore, the potential chiral-halide-perovskite-based applications are presented and the challenges and prospects of chiral perovskites are discussed. This report outlines the diverse construction strategies of and proposes research directions for chiral halide perovskites; thus, it provides insights into the design of novel chiral perovskites and facilitates investigation of the optoelectronic applications that employ chirality.
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Affiliation(s)
- Jiaqi Ma
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Haizhen Wang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Dehui Li
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
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28
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Yin WY, Weng YG, Ren ZH, Zhang ZR, Zhu QY, Dai J. Tetrathiafulvalene-based double metal lead iodides: structures and electrical properties. Dalton Trans 2021; 50:8120-8126. [PMID: 34021298 DOI: 10.1039/d1dt00631b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Introducing electronically active organic components into lower dimensional metal halide compounds is an effective strategy to improve the electronic properties of hybrid metal halide materials. We have previously used this strategy to explore hybrid halides with tetrathiafulvalenes (TTFs) and a series of lead iodides and bismuth halides were isolated. The electronic properties were improved notably using this modification. In this work, we expand the study of TTF based main-group metal halides to double metal halides with mixed lead and copper transition metals. Two hybrid TTF-lead-cuprous iodides, formulated as [TTF]5[Pb2Cu2I10]·H2O (1) and [TTF]2[PbCu2I6] (2), and two monometal analogues of [TTF]2[Cu4I6]·H2O (3) and [TTF]2[Ag4I6] (4) were crystallographically characterized. The anion of 1 is a 0D cluster, while that of the others is a 1D chain structure. The anion structures of 1-4 are novel and are reported for the first time. The TTF moieties are stacked to form a 2D framework in 1 and 1D columns in 2-4. We found that the semiconductor properties of the hybrids are related to electron donation from an anion to a cation. The electronic state of the TTF cations is another significant factor that affects the electronic properties of the materials. More notably, this work proved that the conductivity and photoconductivity of the mixed metal iodides are superior to those of the monometal iodides.
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Affiliation(s)
- Wen-Yu Yin
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, People's Republic of China. and Key Laboratory of Advanced Functional Materials; School of Chemistry & Materials Engineering, Changshu Institute of Technology, Changshu, 215500, People's Republic of China
| | - Yi-Gang Weng
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, People's Republic of China.
| | - Zhou-Hong Ren
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, People's Republic of China.
| | - Zhi-Ruo Zhang
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, People's Republic of China.
| | - Qin-Yu Zhu
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, People's Republic of China.
| | - Jie Dai
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, People's Republic of China.
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29
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Owczarek M, Szklarz P, Jakubas R. Towards ferroelectricity-inducing chains of halogenoantimonates(iii) and halogenobismuthates(iii). RSC Adv 2021; 11:17574-17586. [PMID: 35480207 PMCID: PMC9033163 DOI: 10.1039/d0ra10151f] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2020] [Accepted: 05/06/2021] [Indexed: 11/28/2022] Open
Abstract
In halogenoantimonate(iii) and halogenobismuthate(iii) organic–inorganic hybrids, chains of trans-connected octahedra, trans-[MX5]∞, are considered attractive anionic structures for inducing ferroelectricity. The latter is realized by displacing the bridging halogen atoms along the chain direction – the process that changes the polarity of the whole unit. Advances in the identification of such materials have been hindered, however, by substantial difficulty in obtaining such structures. Here we investigate structural and dielectric properties of three families of compounds based on 2-mercaptopyrimidinium, 2-aminopyrimidinium, and 2-amino-4-methylpyrimidinium cations in which 8 out of 12 compounds show trans-[MX5]∞ chains in their crystal structures. Two of the compounds adopt a polar P21 space group and are potentially ferroelectric. We perform a detailed structural analysis of all compounds with trans-[MX5]∞ chains discovered by far to understand the factors that lead to the chains' formation. We reveal that the size of a cation predominantly defines the accessibility of structures with this anionic form and we provide rules for designing hybrids with trans-[MX5]∞ chains to help guide future efforts to engineer materials with interesting non-linear electrical properties. A discovered abundance of structures with rare and highly-desired anionic chains is examined to identify structural factors leading to the chains' formation.![]()
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Affiliation(s)
- Magdalena Owczarek
- Faculty of Chemistry, University of Wroclaw F. Joliot Curie 14 50-383 Wroclaw Poland
| | - Przemysław Szklarz
- Faculty of Chemistry, University of Wroclaw F. Joliot Curie 14 50-383 Wroclaw Poland
| | - Ryszard Jakubas
- Faculty of Chemistry, University of Wroclaw F. Joliot Curie 14 50-383 Wroclaw Poland
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30
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Li Y, Shi Z, Liang W, Ma J, Chen X, Wu D, Tian Y, Li X, Shan C, Fang X. Recent advances toward environment-friendly photodetectors based on lead-free metal halide perovskites and perovskite derivatives. MATERIALS HORIZONS 2021; 8:1367-1389. [PMID: 34846447 DOI: 10.1039/d0mh01567a] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Recently, metal-halide perovskites have emerged as promising materials for photodetector (PD) applications owing to their superior optoelectronic properties, such as ambipolar charge transport characteristics, high carrier mobility, and so on. In the past few years, rapid progress in lead-based perovskite PDs has been witnessed. However, the critical environmental instability and lead-toxicity seriously hinder their further applications and commercialization. Therefore, searching for environmentally stable and lead-free halide perovskites (LFHPs) to address the above hurdles is certainly a worthwhile subject. In this review, we present a comprehensive overview of currently explored LFHPs with an emphasis on their crystal structures, optoelectronic properties, synthesis and modification methods, as well as the PD applications. LFHPs are classified into four categories according to the replacement strategies of Pb2+, including AB(ii)X3, A3B(iii)2X9, A2B(i)B(iii)'X6, and newly-emerging perovskite derivatives. Then, we give a demonstration of the preliminary achievements and limitations in environment-friendly PDs based on such LFHPs and perovskite derivatives, and also discuss their applications in biological synapses, imaging, and X-ray detection. With the perspective of their properties and current challenges, we provide an outlook for future directions in this rapidly evolving field to achieve high-quality LFHPs and perovskite derivatives for a broader range of fundamental research and practical applications.
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Affiliation(s)
- Ying Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
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Szklarz P, Śmiałkowski M, Bator G, Jakubas R, Cichos J, Karbowiak M, Medycki W, Baran J. Phase transitions and properties of 0D hybrid iodoantimonate(III) and iodobismuthate(III) semiconducting ferroics: [C(NH2)3]3Bi2I9 and [C(NH2)3]3Sb2I9. J Mol Struct 2021. [DOI: 10.1016/j.molstruc.2020.129387] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Wang L, Su J, Guo Y, Lin Z, Hao Y, Chang J. 97.3% Pb-Reduced CsPb 1-xGe xBr 3 Perovskite with Enhanced Phase Stability and Photovoltaic Performance through Surface Cu Doping. J Phys Chem Lett 2021; 12:1098-1103. [PMID: 33471997 DOI: 10.1021/acs.jpclett.0c03580] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Ge doping has been regarded as an effective way to explore the low-toxicity inorganic halide perovskite. However, Ge2+ ions are easy to oxidize because the Ge dopant raises the valence band maximum (VBM) over the water oxidization (H2O/O2) potential. Here we find that surface Cu doping can bend down the band levels and decline the VBM of the CsPb1-xGexBr3 surface below the H2O/O2 potential, then prevent the Ge2+ from being oxidized into Ge4+ by water because the Cu dopant reduces the perovskite surface electron accumulation. Note that the Cu dopant prefers to locate at the perovskite surface rather than the interior, and it reduces the surface energy and enhances the stability. Consequently, the largest Pb reduction increases to 97.3% for the Cu-doped CsPb1-xGexBr3 surface. Moreover, the exciton binding energy and optical absorption of CsPb1-xGexBr3 could be further improved by the surface Cu dopant. This work provides guidance for finding low-toxicity stable inorganic perovskites.
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Affiliation(s)
- Lu Wang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Jie Su
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Yujia Guo
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Zhenhua Lin
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Yue Hao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Jingjing Chang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an 710071, China
- Advanced Interdisciplinary Research Center for Flexible Electronics, Xidian University, Xi'an 710071, China
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