Effective Dark Current Suppression for High-Detectivity Organic Near-Infrared Photodetectors Using a Non-Fullerene Acceptor

Highly-efficient low-cost polarization-sensitive organic photodetectors based on laminated self-assembly planar and bulk heterojunctions

To overcome the severe problems arising from the insufficient light absorption of ultrathin self-assembly active layers and the high cost use of atomic force deposition (ALD)-grown low-leakage-current transport layers, we successfully developed a low-cost, simple and facile strategy of floating-film transfer and multilayer lamination (FFTML) for constructing highly-efficient ALD-free broadband polarization-sensitive organic photodetectors (OPDs) with the two commonly used structures of donor/acceptor planar heterojunction (PHJ) and donor:acceptor multilayer bulk heterojunction (BHJ). It was found that the PHJ-based polarization-sensitive OPD by FFTML possesses a low dark current due to the high carrier injection barrier, indicating it is more suitable to be applied in low polarized light detection scenarios. In contrast, the BHJ-based device by FFTML has a higher spectral responsivity in the whole wavelength due to more photo-excitons transferred to the donor:acceptor interface and dissociated into photoexcited carrirers. Furthermore, the film thickness, which is tuned by increasing lamination number of BHJ layers, has a big effect on the polarization-sensitive photodetection performance. The polarization-sensitive 4-BHJ OPD by FFTML finally achieved a high specific detectivity of 8.33 × 1010Jones, which was much higher than 2.72 × 1010Jones for the 2-BHJ device at 0 V. This work demonstrates that layer-by-layer lamination of self-assembly films can effectively improve the polarized-light detection performance, contributing significantly to the rapid development of the field.

Exploring Pore Formation and Gas Sensing Kinetics Using Conjugated Polymer-Small Molecule Blends

Controlling miscibility between mixture components helps induce spontaneous phase separation into distinct domain sizes, thereby resulting in porous conjugated polymer (CP) films with different pore sizes after selective removal of auxiliary components. The miscibility of the CP mixture can be tailored by blending auxiliary model components designed by reflecting the difference in solubility parameters with the CP. The pore size increases as the difference in solubility parameters between the matrix CP and auxiliary component increases. Electrical properties are not critically damaged even after forming pores in the CP; however, excessive pore formation enables pores to spread to the vicinity of the dielectric layer of CP-based field-effect transistors (FETs), leading to partial loss of the carrier-transporting active channel in the FET. The porous structure is advantageous for not only increasing detection sensitivity but also improving the detection speed when porous CP films are applied to FET-based gas sensors for NO2 detection. The quantitative analysis of the response-recovery trend of the FET sensor using the Langmuir isotherm suggests that the response speed can be improved by more than 2.5 times with a 50-fold increase in NO2 sensitivity compared with pristine CP, which has no pores.

Advancing Detectivity and Stability of Near-Infrared Organic Photodetectors via a Facile and Efficient Cathode Interlayer

Near-infrared (NIR) organic photodetectors (OPDs) are pivotal in numerous technological applications due to their excellent responsivity within the NIR region. Polyethylenimine ethoxylated (PEIE) has conventionally been employed as an electron transport layer (hole-blocking layer) to suppress dark current (JD) and enhance charge transport. However, the limitations of PEIE in chemical stability, processing conditions, environmental impact, and absorption range have spurred the development of alternative materials. In this study, we introduced a novel solution: a hybrid of sol-gel zinc oxide (ZnO) and N,N'-bis(N,N-dimethylpropan-1-amine oxide)perylene-3,4,9,10-tetracarboxylic diimide (PDINO) as the electron transport layer for NIR-OPDs. Our fabricated OPD exhibited significantly improved responsivity, reduced internal traps, and enhanced charge transfer efficiency. The detectivity, spanning from 400 to 1100 nm, surpassed ∼5 × 1012 Jones, reaching ∼1.1 × 1012 Jones at 1000 nm, accompanied by an increased responsivity of 0.47 A/W. Also, the unpackaged OPD remarkedly demonstrated stable JD and external quantum efficiency (EQE) over 1000 h under dark storage conditions. This innovative approach not only addresses the drawbacks of conventional PEIE-based OPDs but also offers promising avenues for the development of high-performance OPDs in the future.

Ultra-Broadband High-Entropy Oxide Absorber Layer for Enhanced Photodetector Performance

A novel light-absorbing material of high-entropy oxide (HEO) has been synthesized using the hydrothermal method. The HEO has six metals, namely, Fe, Ni, Mn, Cr, Mg, and Cu. The obtained HEO light absorber is demonstrated to show unprecedented broadband absorption, ranging from 310 to 1400 nm. The photodetector having a structure of Ag/HEO/n-Si has been evaluated for its performance. Under the illumination of various light wavelengths, the photodetector exhibits a remarkably wide range of photoresponse from 365 to 1050 nm, giving wide-spectrum photocurrent densities in the order of 1 mA/cm2, a responsibility as high as 3.5 A/W (850 nm), and an external quantum efficiency (EQE) of more than 700% (850 nm), outperforming all of the reported oxide-based photodetectors. The superior device performance is attributed to the excellent light absorbance and EQE of the oxygen vacancy-containing HEO. Moreover, a number of tests, including the abrasion test, temperature endurance, acidic resistance, on-off switching cycling, and 3 dB bandwidth measurement, show the excellent reliability of the obtained HEO-based photodetector.

High Detectivity Near Infrared Organic Photodetectors Using an Asymmetric Non-Fullerene Acceptor for Optimal Nanomorphology and Suppressed Dark Current

Recently, the development of non-fullerene acceptors (NFAs) for near-infrared (NIR) organic photodetectors (OPDs) has attracted great interest due to their excellent NIR light absorption properties. Herein, we developed NFAs by substituting an electron-donating moiety (branched alkoxy thiophene (BAT)) asymmetrically (YOR1) and symmetrically (YOR2) for the Y6 framework. YOR1 exhibited nanoscale phase separation in a film blended with PTB7-Th. Moreover, substituting the BAT unit effectively extended the absorption wavelengths of YOR1 over 1000 nm by efficient intramolecular charge transfer and extension of the conjugation length. Consequently, YOR1-OPD exhibited significantly reduced dark current and improved responsivity by simultaneously satisfying optimal nanomorphology and significant suppression of charge recombination, resulting in 1.98 × 1013 and 3.38 × 1012 Jones specific detectivity at 950 and 1000 nm, respectively. Moreover, we successfully demonstrated the application of YOR1-OPD in highly sensitive photoplethysmography sensors using NIR light. This study suggests a strategic approach for boosting the overall performance of NIR OPDs targeting a 1000 nm light signal using an all-in-one (optimal morphology, suppressed dark current, and extended NIR absorption wavelength) NFA.

The State-of-the-Art Solution-Processed Single Component Organic Photodetectors Achieved by Strong Quenching of Intermolecular Emissive State and High Quadrupole Moment in Non-Fullerene Acceptors

A bulk-heterojunction (BHJ) blend is commonly used as the photoactive layer in organic photodetectors (OPDs) to utilize the donor (D)/acceptor (A) interfacial energetic offset for exciton dissociation. However, this strategy often complicates optimization procedures, raising serious concerns over device processability, reproducibility, and stability. Herein, highly efficient OPDs fabricated with single-component organic semiconductors are demonstrated via solution-processing. The non-fullerene acceptors (NFAs) with strong intrinsic D/A character are used as the photoactive layer, where the emissive intermolecular charge transfer excitonic (CTE) states are formed within <1 ps, and efficient photocurrent generation is achieved via strong quenching of these CTE states by reverse bias. Y6 and IT-4F-based OPDs show excellent OPD performances, low dark current density (≈10-9 A cm-2 ), high responsivity (≥0.15 A W-1 ), high specific detectivity (>1012 Jones), and fast photo-response time (<10 µs), comparable to the state-of-the-art BHJ OPDs. Together with strong CTE state quenching by electric field, these excellent OPD performances are also attributed to the high quadrupole moments of NFA molecules, which can lead to large interfacial energetic offset for efficient CTE dissociation. This work opens a new way to realize efficient OPDs using single-component systems via solution-processing and provides important molecular design rules.

An n-Type All-Fused-Ring Molecule with Photoresponse to 1000 nm for Highly Sensitive Near-Infrared Photodetector

Most of all-fused-ring π-conjugated molecules have wide or medium bandgap and show photo response in the visible range. In this work, an all-fused-ring n-type molecule, which exhibits an ultrasmall optical bandgap of 1.22 eV and strong near-infrared (NIR) absorption with an onset absorption wavelength of 1013 nm is reported. The molecule consists of 14 aromatic rings and has electron donor-acceptor characteristics. It exhibits excellent n-type properties with low-lying HOMO/LUMO energy levels of -5.48 eV/-3.95 eV and high electron mobility of 7.0 × 10^-4  cm²  V^-1  s^-1 . Most importantly, its thin film exhibits a low trap density of 5.55 × 10¹⁶  cm^-3 because of the fixed molecular conformation and consequently low conformation disorder. As a result, organic photodetector (OPD) based on the compound exhibits a remarkably low dark current density (J_d ) of 2.01 × 10^-10  A cm^-2 at 0 V. The device shows a shot-noise-limited specific detectivity (D_sh *) of exceeding 10¹³  Jones at 400-1000 nm wavelength region with a peak specific detectivity of 4.65 × 10¹³  Jones at 880 nm. This performance is among the best reported for self-powered NIR OPDs.

Highly Efficient Ternary Near-Infrared Organic Photodetectors for Biometric Monitoring

Near-infrared (NIR) small-molecule acceptors that absorb at wavelengths of up to 1000 nm are attractive for applications in organic photodetectors (OPDs) and biometrics. In this study, we incorporated IEICO-4F as the third component for PffBT4T-2OD:PC₇₁BM-based OPDs to provide an efficient NIR response while greatly suppressing the leakage current at reverse bias. By varying the blend ratio and thickness (250-600 nm), we obtained an NIR OPD displaying an ultralow dark-current density (J_D = 2.62 nA cm^-2), ultrahigh detectivity [D* = 7.2 × 10¹² Jones (850 nm)], high sensitivity, and photoresponsivity covering the region from the ultraviolet to the NIR. We used tapping-mode atomic force microscopy, optical microscopy, grazing-incidence wide-angle X-ray scattering, and contact angle measurements to investigate the effect of IEICO-4F on the performance of the ternary OPDs. The low compatibility of PffBT4T-2OD and IEICO-4F, originating from weak intermolecular interactions, allowed us to manipulate the degree of phase separation between the donor and acceptor in the ternary blends, leading to an optimized blend morphology featuring efficient charge separation, transport, and collection. To demonstrate its applicability, we integrated our OPD with two light-emitting diodes and used the system for precisely calculated transmissive pulse oximetry.

High-Performance All-Polymer Photodetectors Enabled by New Random Terpolymer Acceptor with Fine-Tuned Molecular Weight

Reducing the dark current density and enhancing the overall performance of the device is the focal point in research for organic photodetectors. Two novel random terpolymers (P3 and P4) with different molecular weights are synthesized and evaluated as acceptors in bulk heterojunction (BHJ) polymer photodetectors. Compared with known acceptor materials, such as N2200 (P1) and F-N2200 (P2), polymer P4 has a lower lowest unoccupied molecular orbital (LUMO) energy level, favorable morphology, and good miscibility with a donor material J71, which leads to proper phase separation of the blend film and better dissociation of excitons and transport of carriers. Therefore, a considerably low dark current density (Jd) of 1.9 × 10-10 A/cm2 and a high specific detectivity (D*) of 1.8 × 1013 cm Hz1/2/W (also "Jones") at 580 nm under a -0.1 V bias are realized for the P4-based photodetector. More importantly, the device also exhibits a fast response speed (τr/τf = 1.24/1.87 μs) and a wide linear dynamic range (LDR) of 109.2 dB. This work demonstrates that high-performance all-polymer photodetectors with ideal morphology can be realized by random polymer acceptors with a fine-tuned molecular weight.

Realizing Broadband NIR Photodetection and Ultrahigh Responsivity with Ternary Blend Organic Photodetector

With the advancement of portable optoelectronics, organic semiconductors have been attracting attention for their use in the sensing of white and near-infrared light. Ideally, an organic photodiode (OPD) should simultaneously display high responsivity and a high response frequency. In this study we used a ternary blend strategy to prepare PM6: BTP-eC9: PCBM-based OPDs with a broad bandwidth (350-950 nm), ultrahigh responsivity, and a high response frequency. We monitored the dark currents of the OPDs prepared at various PC71BM blend ratios and evaluated their blend film morphologies using optical microscopy, atomic force microscopy, and grazing-incidence wide-angle X-ray scattering. Optimization of the morphology and energy level alignment of the blend films resulted in the OPD prepared with a PM6:BTP-eC9:PC71BM ternary blend weight ratio of 1:1.2:0.5 displaying an extremely low dark current (3.27 × 10-9 A cm-2) under reverse bias at -1 V, with an ultrahigh cut-off frequency (610 kHz, at 530 nm), high responsivity (0.59 A W-1, at -1.5 V), and high detectivity (1.10 × 1013 Jones, under a reverse bias of -1 V at 860 nm). Furthermore, the rise and fall times of this OPD were rapid (114 and 110 ns), respectively.

Different Morphology Dependence for Efficient Indoor Organic Photovoltaics: The Role of the Leakage Current and Recombination Losses

Efficient indoor organic photovoltaics (OPVs) have attracted strong attention for their application in indoor electronic devices. However, the route to optimal photoactive film morphology toward high-performance indoor devices has remained obscure. The leakage current dominated by morphology exerts distinguishing influence on the performance under different illuminations. We have demonstrated that morphology reoptimization plays an important role in indoor OPVs, and their optimal structural features are different from what we laid out for outdoor devices. For indoor OPVs, in order to facilitate low leakage current, it is essential to enhance the crystallinity, phase separation, and domain purity, as well as keeping small surface roughness of the active layer. Furthermore, considering the reduced bimolecular recombination at low light intensity, we have shown that PM6:M36-based indoor devices can work effectively with a large ratio of the donor and acceptor. Our work correlating structure-performance relation and the route to optimal morphology outlines the control over device leakage current and recombination losses boosting the progress of efficient indoor OPVs.