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Jo MS, Kim SH, Park SY, Choi KW, Kim SH, Yoo JY, Kim BJ, Yoon JB. Fast-Response and Low-Power Self-Heating Gas Sensor Using Metal/Metal Oxide/Metal (MMOM) Structured Nanowires. ACS Sens 2024. [PMID: 38626402 DOI: 10.1021/acssensors.3c02613] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
With the escalating global awareness of air quality management, the need for continuous and reliable monitoring of toxic gases by using low-power operating systems has become increasingly important. One of which, semiconductor metal oxide gas sensors have received great attention due to their high/fast response and simple working mechanism. More specifically, self-heating metal oxide gas sensors, wherein direct thermal activation in the sensing material, have been sought for their low power-consuming characteristics. However, previous works have neglected to address the temperature distribution within the sensing material, resulting in inefficient gas response and prolonged response/recovery times, particularly due to the low-temperature regions. Here, we present a unique metal/metal oxide/metal (MMOM) nanowire architecture that conductively confines heat to the sensing material, achieving high uniformity in the temperature distribution. The proposed structure enables uniform thermal activation within the sensing material, allowing the sensor to efficiently react with the toxic gas. As a result, the proposed MMOM gas sensor showed significantly enhanced gas response (from 6.7 to 20.1% at 30 ppm), response time (from 195 to 17 s at 30 ppm), and limit of detection (∼1 ppm) when compared to those of conventional single-material structures upon exposure to carbon monoxide. Furthermore, the proposed work demonstrated low power consumption (2.36 mW) and high thermal durability (1500 on/off cycles), demonstrating its potential for practical applications in reliable and low-power operating gas sensor systems. These results propose a new paradigm for power-efficient and robust self-heating metal oxide gas sensors with potential implications for other fields requiring thermal engineering.
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Affiliation(s)
- Min-Seung Jo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sung-Ho Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - So-Yoon Park
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Kwang-Wook Choi
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- SAMSUNG ELECTRONICS Co., Ltd., 130 Samsungjeonja-ro, Yeongtong-gu, Suwon-si, Gyenggi-do 16678, Republic of Korea
| | - Sang-Hee Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- SAMSUNG ELECTRONICS Co., Ltd., 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea
| | - Jae-Young Yoo
- Center for Bio-Integrated Electronics, Northwestern University, Evanston, Illinois 60208, United States
| | - Beom-Jun Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jun-Bo Yoon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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Ghadage P, Shinde KP, Nadargi D, Nadargi J, Shaikh H, Alam MA, Mulla I, Tamboli MS, Park JS, Suryavanshi S. Bismuth ferrite based acetone gas sensor: evaluation of graphene oxide loading. RSC Adv 2024; 14:1367-1376. [PMID: 38174272 PMCID: PMC10763655 DOI: 10.1039/d3ra06733e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 12/18/2023] [Indexed: 01/05/2024] Open
Abstract
We report a BiFeO3/graphene oxide (BFO/GO) perovskite, synthesized using a CTAB-functionalized glycine combustion route, as a potential material for acetone gas sensing applications. The physicochemical properties of the developed perovskite were analysed using XRD, FE-SEM, TEM, HRTEM, EDAX and XPS. The gas sensing performance was analysed for various test gases, including ethanol, acetone, propanol, ammonia, nitric acid, hydrogen sulphide and trimethylamine at a concentration of 500 ppm. Among the test gases, the developed BFO showed the best selectivity towards acetone, with a response of 61% at an operating temperature of 250 °C. All the GO-loaded BFO samples showed an improved gas sensing performance compared with pristine BFO in terms of sensitivity, the response/recovery times, the transient response curves and the stability. The 1 wt% GO-loaded BiFeO3 sensor showed the highest sensitivity of 89% towards acetone (500 ppm) at an operating temperature of 250 °C. These results show that the developed perovskites have significant potential for use in acetone gas sensing applications.
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Affiliation(s)
- Pandurang Ghadage
- School of Physical Sciences, Punyashlok Ahilyadevi Holkar Solapur University Solapur 413255 India
| | - K P Shinde
- Department of Materials Science and Engineering, Hanbat National University Daejeon 34158 South Korea
| | - Digambar Nadargi
- School of Physical Sciences, Punyashlok Ahilyadevi Holkar Solapur University Solapur 413255 India
- Centre for Materials for Electronics Technology, C-MET Thrissur 680581 India
| | - Jyoti Nadargi
- Department of Physics, Santosh Bhimrao Patil College Mandrup Solapur 413221 India
| | - Hamid Shaikh
- SABIC Polymer Research Centre, Department of Chemical Engineering, King Saud University P.O. Box 800 Riyadh 11421 Saudi Arabia
| | - Mohammad Asif Alam
- Center of Excellence for Research in Engineering Materials (CEREM), King Saud University P.O. Box 800 Riyadh 11421 Saudi Arabia
| | - Imtiaz Mulla
- Former Emeritus Scientist (CSIR), NCL Pune 411008 India
| | - Mohaseen S Tamboli
- Korea Institute of Energy Technology (KENTECH) 21 KENTECH-gil Naju Jeollanam-do 58330 Republic of Korea
| | - J S Park
- Department of Materials Science and Engineering, Hanbat National University Daejeon 34158 South Korea
| | - Sharad Suryavanshi
- School of Physical Sciences, Punyashlok Ahilyadevi Holkar Solapur University Solapur 413255 India
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Kim SH, Jo MS, Choi KW, Yoo JY, Kim BJ, Yang JS, Chung MK, Kim TS, Yoon JB. Ultrathin Serpentine Insulation Layer Architecture for Ultralow Power Gas Sensor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304555. [PMID: 37649204 DOI: 10.1002/smll.202304555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 08/01/2023] [Indexed: 09/01/2023]
Abstract
Toxic gases have surreptitiously influenced the health and environment of contemporary society with their odorless/colorless characteristics. As a result, a pressing need for reliable and portable gas-sensing devices has continuously increased. However, with their negligence to efficiently microstructure their bulky supportive layer on which the sensing and heating materials are located, previous semiconductor metal-oxide gas sensors have been unable to fully enhance their power efficiency, a critical factor in power-stringent portable devices. Herein, an ultrathin insulation layer with a unique serpentine architecture is proposed for the development of a power-efficient gas sensor, consuming only 2.3 mW with an operating temperature of 300 °C (≈6% of the leading commercial product). Utilizing a mechanically robust serpentine design, this work presents a fully suspended standalone device with a supportive layer thickness of only ≈50 nm. The developed gas sensor shows excellent mechanical durability, operating over 10 000 on/off cycles and ≈2 years of life expectancy under continuous operation. The gas sensor detected carbon monoxide concentrations from 30 to 1 ppm with an average response time of ≈15 s and distinguishable sensitivity to 1 ppm (ΔR/R0 = 5%). The mass-producible fabrication and heating efficiency presented here provide an exemplary platform for diverse power-efficient-related devices.
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Affiliation(s)
- Sung-Ho Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Min-Seung Jo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Kwang-Wook Choi
- Samsung Electronics Co., Ltd., 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Republic of Korea
| | - Jae-Young Yoo
- Center for Bio-Integrated Electronics, Northwestern University, Evanston, IL, 60208, USA
| | - Beom-Jun Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jae-Soon Yang
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Myung-Kun Chung
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Tae-Soo Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jun-Bo Yoon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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Jung G, Ju S, Choi K, Kim J, Hong S, Park J, Shin W, Jeong Y, Han S, Choi WY, Lee JH. Reconfigurable Manipulation of Oxygen Content on Metal Oxide Surfaces and Applications to Gas Sensing. ACS NANO 2023; 17:17790-17798. [PMID: 37611120 DOI: 10.1021/acsnano.3c03034] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Abstract
Oxygen vacancies and adsorbed oxygen species on metal oxide surfaces play important roles in various fields. However, existing methods for manipulating surface oxygen require severe settings and are ineffective for repetitive manipulation. We present a method to manipulate the amount of surface oxygen by modifying the oxygen adsorption energy by electrically controlling the electron concentration of the metal oxide. The surface oxygen control ability of the method is verified using first-principles calculations based on density functional theory (DFT), X-ray photoelectron spectroscopy (XPS), and electrical resistance analysis. The presented method is implemented by fabricating oxide thin film transistors with embedded microheaters. The method can reconfigure the oxygen vacancies on the In2O3, SnO2, and IGZO surfaces so that specific chemisorption dominates. The method can selectively increase oxidizing (e.g., NO and NO) and reducing gas (e.g., H2S, NH3, and CO) reactions by electrically controlling the metal oxide surface to be oxygen vacancy-rich or adsorbed oxygen species-rich. The proposed method is applied to gas sensors and overcomes their existing limitations. The method makes the sensor insensitive to one gas (e.g., H2S) in mixed-gas environments (e.g., NO2+H2S) and provides a linear response (R2 = 0.998) to the target gas (e.g., NO2) concentration within 3 s. We believe that the proposed method is applicable to applications utilizing metal oxide surfaces.
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Affiliation(s)
- Gyuweon Jung
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Suyeon Ju
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Kangwook Choi
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Jaehyeon Kim
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Seongbin Hong
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Jinwoo Park
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Wonjun Shin
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Yujeong Jeong
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Seungwu Han
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Woo Young Choi
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Jong-Ho Lee
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
- Ministry of Science and ICT, Sejong 30121, Republic of Korea
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Jung G, Shin H, Jeon SW, Lim YH, Hong S, Kim DH, Lee JH. Transducer-Aware Hydroxy-Rich-Surface Indium Oxide Gas Sensor for Low-Power and High-Sensitivity NO 2 Gas Sensing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:22651-22661. [PMID: 37115020 DOI: 10.1021/acsami.3c00022] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Low-power metal oxide (MOX)-based gas sensors are widely applied in edge devices. To reduce power consumption, nanostructured MOX-based sensors that detect gas at low temperatures have been reported. However, the fabrication process of these sensors is difficult for mass production, and these sensors are lack uniformity and reliability. On the other hand, MOX film-based gas sensors have been commercialized but operate at high temperatures and exhibit low sensitivity. Herein, commercially advantageous highly sensitive, film-based indium oxide sensors operating at low temperatures are reported. Ar and O2 gases are simultaneously injected during the sputtering process to form a hydroxy-rich-surface In2O3 film. Conventional indium oxide (In2O3) films (A0) and hydroxy-rich indium oxide films (A1) are compared using several analytical techniques. A1 exhibits a work function of 4.92 eV, larger than that of A0 (4.42 eV). A1 exhibits a Debye length 3.7 times longer than that of A0. A1 is advantageous for gas sensing when using field effect transistors (FETs) and resistors as transducers. Because of the hydroxy groups present on the surface of A1, A1 can react with NO2 gas at a lower temperature (∼100 °C) than A0 (180 °C). Operando diffuse reflectance infrared Fourier transform spectrometry (DRIFTS) shows that NO2 gas is adsorbed to A1 as nitrite (NO2-) at 100 °C and nitrite and nitrate (NO3-) at 200 °C. After NO2 is adsorbed as nitrate, the sensitivity of the A1 sensor decreases and its low-temperature operability is compromised. On the other hand, when NO2 is adsorbed only as nitrite, the performance of the sensor is maintained. The reliable hydroxy-rich FET-type gas sensor shows the best performance compared to that of the existing film-based NO2 gas sensors, with a 2460% response to 500 ppb NO2 gas at a power consumption of 1.03 mW.
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Affiliation(s)
- Gyuweon Jung
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Hunhee Shin
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Se Won Jeon
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Yong Hyun Lim
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Seongbin Hong
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Do Heui Kim
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Jong-Ho Lee
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
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