High-Performance Phototransistors Based on PDIF-CN2 Solution-Processed Single Fiber and Multifiber Assembly

Ambipolar to Unipolar Conversion in C70/Ferrocene Nanosheet Field-Effect Transistors

Organic cocrystals, which are assembled by noncovalent intermolecular interactions, have garnered intense interest due to their remarkable chemicophysical properties and practical applications. One notable feature, namely, the charge transfer (CT) interactions within the cocrystals, not only facilitates the formation of an ordered supramolecular network but also endows them with desirable semiconductor characteristics. Here, we present the intriguing ambipolar CT properties exhibited by nanosheets composed of single cocrystals of C70/ferrocene (C70/Fc). When heated to 150 °C, the initially ambipolar monoclinic C70/Fc nanosheet-based field-effect transistors (FETs) were transformed into n-type face-centered cubic (fcc) C70 nanosheet-based FETs owing to the elimination of Fc. This thermally induced alteration in the crystal structure was accompanied by an irreversible switching of the semiconducting behavior of the device; thus, the device transitions from ambipolar to unipolar. Importantly, the C70/Fc nanosheet-based FETs were also found to be much more thermally stable than the previously reported C60/Fc nanosheet-based FETs. Furthermore, we conducted visible/near-infrared diffuse reflectance and photoemission yield spectroscopies to investigate the crucial role played by Fc in modulating the CT characteristics. This study provides valuable insights into the overall functionality of these nanosheet structures.

Effects of the Donor Unit on the Formation of Hybrid Layers of Donor-Acceptor Copolymers with Silver Nanoparticles

Donor-acceptor (D-A) copolymers containing perylene-3,4,9,10-tetracarboxydiimide (PDI) electron-acceptor (A) units belonging to n-type semiconductors are of interest due to their many potential applications in photonics, particularly for electron-transporting layers in all-polymeric or perovskite solar cells. Combining D-A copolymers and silver nanoparticles (Ag-NPs) can further improve material properties and device performances. Hybrid layers of D-A copolymers containing PDI units and different electron-donor (D) units (9-(2-ethylhexyl)carbazole or 9,9-dioctylfluorene) with Ag-NPs were prepared electrochemically during the reduction of pristine copolymer layers. The formation of hybrid layers with Ag-NP coverage was monitored by in-situ measurement of absorption spectra. The Ag-NP coverage of up to 41% was higher in hybrid layers made of copolymer with 9-(2-ethylhexyl)carbazole D units than in those made of copolymer with 9,9-dioctylfluorene D units. The pristine and hybrid copolymer layers were characterized by scanning electron microscopy and X-ray photoelectron spectroscopy, which proved the formation of hybrid layers with stable Ag-NPs in the metallic state with average diameters <70 nm. The influence of D units on Ag-NP diameters and coverage was revealed.

Analysis of External and Internal Disorder to Understand Band-Like Transport in n-Type Organic Semiconductors

Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e., related to interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (<a-few-hundred cm^-1 ), which makes it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be external, being controlled by the gate insulator dielectric properties. Here a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory, and simulations is reported. Unambiguous evidence that ad hoc molecular design enables the electron charge carriers to be freed from both internal and external disorder to ultimately reach band-like electron transport is provided.

1,7,9,10-Tetrasubstituted PMIs Accessible through Decarboxylative Bromination: Synthesis, Characterization, Photophysical Studies, and Hydrogen Evolution Catalysis

In this work, we present a new synthetic strategy for fourfold-substituted perylene monoimides via tetrabrominated perylene monoanhydrides. X-ray diffraction analysis unveiled the intramolecular stacking orientation between the substituents and semicircular packing behavior. We observed the remarkable influence of the substituent on the longevity and nature of the excited state upon visible light excitation. In the presence of poly(dehydroalanine)-graft-poly(ethylene glycol) graft copolymers as solubilizing template, the chromophores are capable of sensitizing [Mo3 S13 ]2- clusters in aqueous solution for stable visible light driven hydrogen evolution over three days.

Benzoselenadiazole-Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices

In this work, two symmetrical donor-acceptor-donor (D-A-D) type benzoselenadiazole (BSeD)-based π-conjugated molecules were synthesized and employed as an active switching layer for non-volatile data storage applications. BSeD-based derivatives with different donor units attached through common vinylene linkers showed different electrical and optical properties. 4,7-Di((E)-styryl)benzo[c][2,1,3]selenadiazole (DSBSeD) and 4,7-bis((E)-4-methoxystyryl)benzo[c][2,1,3]selenadiazole (DMBSeD) are sandwiched between gallium-doped ZnO (GZO) and metal aluminum electrodes respectively through solution-processed spin-coating method. The solution-processed nanofibrous switching layer containing the DMBSeD-based memory device showed reliable memory characteristics in terms of write and erase operations with low SET voltage than the random-aggregated DSBSeD-based device. The nanofibrous molecular morphology of switching layer overcomes the interfacial hole transport energy barrier at the interface of the DMBSeD thin-film and the bottom GZO electrode. The memory device GZO/DMBSeD/Al based on nanofibrous switching layers shows switching characteristics at compliance current of 10 mA with V_set =0.79 V and V_reset =-0.55 V. This work will be beneficial for the rational design of advanced next-generation organic memory devices by controlling the nanostructured morphology of active organic switching layer for enhanced charge-transfer phenomenon.

Unconventional Nanofabrication for Supramolecular Electronics

The scientific effort toward achieving a full control over the correlation between structure and function in organic and polymer electronics has prompted the use of supramolecular interactions to drive the formation of highly ordered functional assemblies, which have been integrated into real devices. In the resulting field of supramolecular electronics, self-assembly of organic semiconducting materials constitutes a powerful tool to generate low-dimensional and crystalline functional architectures. These include 1D nanostructures (nanoribbons, nanotubes, and nanowires) and 2D molecular crystals with tuneable and unique optical, electronic, and mechanical properties. Optimizing the (opto)electronic properties of organic semiconducting materials is imperative to harness such supramolecular structures as active components for supramolecular electronics. However, their integration in real devices currently represents a significant challenge to the advancement of (opto)electronics. Here, an overview of the unconventional nanofabrication techniques and device configurations to enable supramolecular electronics to become a real technology is provided. A particular focus is put on how single and multiple supramolecular fibers and gels as well as supramolecularly engineered 2D materials can be integrated into novel vertical or horizontal junctions to realize flexible and high-density multifunctional transistors, photodetectors, and memristors, exhibiting a set of new properties and excelling in their performances.

Perovskite and Conjugated Polymer Wrapped Semiconducting Carbon Nanotube Hybrid Films for High-Performance Transistors and Phototransistors

Although organic-inorganic halide perovskites continue to generate considerable interest due to great potentials for various optoelectronic devices, there are some critical obstacles to practical applications, including lead toxicity, relatively low field-effect mobility, and strong hysteresis during operation. This paper proposes a universal approach to significantly improve mobility and operational stability with reduced dual-sweep hysteresis for perovskite-based thin film transistors (TFTs) by coupling low-dimensional lead-free perovskite material (C₆H₅C₂H₄NH₃)₂SnI₄ (hereafter abbreviated as (PEA)₂SnI₄) with embedded conjugated polymer wrapped semiconducting carbon nanotubes (semi-CNTs). In (PEA)₂SnI₄/semi-CNT hybrid TFTs, semi-CNTs can provide highway-like transport paths, enabling smoother carrier transport with less trapping and scattering. We also demonstrate the performance of (PEA)₂SnI₄/semi-CNT hybrid phototransistors with ultrahigh photoresponsivity ( R) of 6.3 × 10⁴ A/W and detectivity ( D*) of 1.12 × 10¹⁷ Jones, which is about 2 or 3 orders of magnitude higher than that of the best devices available to date. The results indicate promising potentials for solution-processed perovskite/semi-CNT hybrid platforms, and the developed strategy can be applied for high-performance perovskite nanomaterial optoelectronics.

Ultrathin Air-Stable n-Type Organic Phototransistor Array for Conformal Optoelectronics

Development of conformal n-channel organic phototransistor (OPT) array is urgent for future applications of organic complementary circuits in portable and wearable electronics and optoelectronics. In this work, the ultrathin conformal OPT array based on air-stable n-type PTCDI-C₁₃H₂₇ was fabricated. The OPT array shows excellent electrical and photoelectrical performance, good device uniformity, and remains stable in electron mobility by 83% after 90 days compared to the initial values. Eventhough mobility, on-state current, off-state current, and photocurrent of PTCDI-C₁₃H₂₇ thin film phototransistor show slight decrease with the decreased bending radius, the device still remains the stable photosensitivity as high as 10⁴ when the device is freely adhered on the 2D surfaces and 3D hemispherical sphere, which is in a class with the highest photosensitivity for perylene diimide derivatives. These results present the promising application potential of our conformable air-stable n-type PTCDI-C₁₃H₂₇ OPTs as the photodetection system of curved artificial compound eyes in wearable and portable electronics and optoelectronics.

Direct Photolithography on Molecular Crystals for High Performance Organic Optoelectronic Devices

Organic crystals are generated via the bottom-up self-assembly of molecular building blocks which are held together through weak noncovalent interactions. Although they revealed extraordinary charge transport characteristics, their labile nature represents a major drawback toward their integration in optoelectronic devices when the use of sophisticated patterning techniques is required. Here we have devised a radically new method to enable the use of photolithography directly on molecular crystals, with a spatial resolution below 300 nm, thereby allowing the precise wiring up of multiple crystals on demand. Two archetypal organic crystals, i.e., p-type 2,7-diphenyl[1]benzothieno[3,2- b][1]benzothiophene (Dph-BTBT) nanoflakes and n-type N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) nanowires, have been exploited as active materials to realize high-performance top-contact organic field-effect transistors (OFETs), inverter and p-n heterojunction photovoltaic devices supported on plastic substrate. The compatibility of our direct photolithography technique with organic molecular crystals is key for exploiting the full potential of organic electronics for sophisticated large-area devices and logic circuitries, thus paving the way toward novel applications in plastic (opto)electronics.

High-Performance Visible-Blind UV Phototransistors Based on n-Type Naphthalene Diimide Nanomaterials

This study investigates the performance of single-crystalline nanomaterials of wide-band gap naphthalene diimide (NDI) derivatives with methylene-bridged aromatic side chains. Such materials are found to be easily used as high-performance, visible-blind near-UV light detectors. NDI single-crystalline nanoribbons are assembled using a simple solution-based process (without solvent-inclusion problems), which is then applied to organic phototransistors (OPTs). Such OPTs exhibit excellent n-channel transistor characteristics, including an average electron mobility of 1.7 cm² V^-1 s^-1, sensitive UV detection properties with a detection limit of ∼1 μW cm^-2, millisecond-level responses, and detectivity as high as 10¹⁵ Jones, demonstrating the highly sensitive organic visible-blind UV detectors. The high performance of our OPTs originates from the large face-to-face π-π stacking area between the NDI semiconducting cores, which is facilitated by methylene-bridged aromatic side chains. Interestingly, NDI-based nanoribbon OPTs exhibit a distinct visible-blind near-UV detection with an identical detection limit, even under intense visible light illumination (for example, 10⁴ times higher intensity than UV light intensity). Our findings demonstrate that wide-band gap NDI-based nanomaterials are highly promising for developing high-performance visible-blind UV photodetectors. Such photodetectors could potentially be used for various applications including environmental and health-monitoring systems.

Regular Aligned 1D Single-Crystalline Supramolecular Arrays for Photodetectors

Solution-processed semiconductor single-crystal patterns possess unique advantages of large scale and low cost, leading to potential applications toward high-performance optoelectronic devices. To integrate organic semiconductor micro/nanostructures into devices, various patterning techniques have been developed. However, previous patterning techniques suffer from trade-offs between precision, scalability, crystallinity, and orientation. Herein, a patterning method is reported based on an asymmetric-wettability micropillar-structured template. Large-scale 1D single-crystalline supramolecular arrays with strict alignment, pure crystallographic orientation, and precise position can be obtained. The wettability difference between tops and sidewalls of micropillars gives rise to the confinement of organic solutions in discrete capillary tubes followed by dewetting and formation of capillary trailing. The capillary trailing enables unidirectional dewetting, regulated mass transport, and confined crystal growth. Owing to the high crystallinity and pure crystallographic orientation with Pt atomic chains parallel to the substrate, the photodetectors based on the 1D arrays exhibit improved responsivity. The work not only provides fundamental understanding on the patterning and crystallization of supramolecular structures but also develops a large-scale assembly technique for patterning single-crystalline micro/nanostructures.

1,4-Dihydropyrrolo[3,2-b]pyrroles as a Single Component Photoactive Layer: A New Paradigm for Broadband Detection

Single component organic photodetectors capable of broadband light sensing represent a paradigm shift for designing flexible and inexpensive optoelectronic devices. The present study demonstrates the application of a new quadrupolar 1,4-dihydropyrrolo[3,2-b]pyrrole derivative with spectral sensitivity across 350-830 nm as a potential broadband organic photodetector (OPD) material. The amphoteric redox characteristics evinced from the electrochemical studies are exploited to conceptualize a single component OPD with ITO and Al as active electrodes. The photodiode showed impressive broadband photoresponse to monochromatic light sources of 365, 470, 525, 589, 623, and 830 nm. Current density-voltage (J-V) and transient photoresponse studies showed stable and reproducible performance under continuous on/off modulations. The devices operating in reverse bias at 6 V displayed broad spectral responsivity (R) and very good detectivity (D*) peaking a maximum 0.9 mA W^-1 and 1.9 × 10¹⁰ Jones (at 623 nm and 500 μW cm^-2) with a fast rise and decay times of 75 and 140 ms, respectively. Low dark current densities ranging from 1.8 × 10^-10 Acm^-2 at 1 V to 7.2 × 10^-9 A cm^-2 at 6 V renders an operating range to amplify the photocurrent signal, spectral responsivity, and detectivity. Interestingly, the fabricated OPDs display a self-operational mode which is rarely reported for single component organic systems.

Generation of Low-Dimensional Architectures through the Self-Assembly of Pyromellitic Diimide Derivatives

Small π-conjugated molecules can be designed and synthesized to undergo controlled self-assembly forming low-dimensional architectures, with programmed order at the supramolecular level. Such order is of paramount importance because it defines the property of the obtained material. Here, we have focused our attention to four pyromellitic diimide derivatives exposing different types of side chains. The joint effect of different noncovalent interactions including π-π stacking, H-bonding, and van der Waals forces on the four derivatives yielded different self-assembled architectures. Atomic force microscopy studies, corroborated with infrared and nuclear magnetic resonance spectroscopic measurements, provided complementary multiscale insight into these assemblies.

An air gap moderates the performance of nanowire array transistors

Solution-processed nanowires are promising for low-cost and flexible electronics. When depositing nanowires from solution, due to stacking of the nanowires, an air gap exists between the substrate and much of the active material. Here, using confocal Raman spectroscopy, we quantify the thickness of the air gap in transistors comprising organic semiconductor nanowires. The average air gap thickness is found to be unexpectedly large, being at least three times larger than the nanowire diameter, leading to a significant impact on transistor performance. The air gap acts as an additional dielectric layer that reduces the accumulation of charge carriers due to a gate voltage. Conventional determination of the charge carrier mobility ignores the presence of an air gap, resulting in an overestimate of charge carrier accumulation and an underestimate of charge carrier mobility. It is shown that the larger the air gap, the larger the mobility correction (which can be greater than an order of magnitude) and the larger the degradation in on-off current ratio. These results demonstrate the importance of minimizing the air gap and of taking the air gap into consideration when analyzing the electrical performance of transistors consisting of stacked nanowires. This finding is applicable to all types of stacked one-dimensional materials including organic and inorganic nanowires, and carbon nanotubes.

Strong Composition Effects in All-Polymer Phototransistors with Bulk Heterojunction Layers of p-type and n-type Conjugated Polymers

We report the composition effect of polymeric sensing channel layers on the performance of all-polymer phototransistors featuring bulk heterojunction (BHJ) structure of electron-donating (p-type) and electron-accepting (n-type) polymers. As an n-type component, poly(3-hexylthiopehe-co-benzothiadiazole) end-capped with 4-hexylthiophene (THBT-4ht) was synthesized via two-step reactions. A well-studied conjugated polymer, poly(3-hexylthiophene) (P3HT), was employed as a p-type polymer. The composition of BHJ (P3HT:THBT-4ht) films was studied in detail by varying the THBT-4ht contents (0, 1, 3, 5, 10, 20, 30, 40, and 100 wt %). The best charge separation in the P3HT:THBT-4ht films was measured at 30 wt % by the photoluminescence (PL) study, while the charge transport characteristics of devices were improved at the low THBT-4ht contents (<10 wt %). The photosensing experiments revealed that the photosensivity of all-polymer phototransistors was higher than that of the phototransistors with the pristine P3HT layers and strongly dependent on the BHJ composition. The highest (corrected) responsivity (R_C) was achieved at 20 wt %, which can be attributable to the balance between the best charge separation and transport states, as investigated for crystal nanostructures and surface morphology by employing synchrotron-radiation grazing-incidence wide-angle X-ray scattering, high-resolution/scanning transmission electron microscopy, and atomic force microscopy.