Fully Inkjet-Printed, Mechanically Flexible MoS2 Nanosheet Photodetectors

Ultrahigh-Responsivity Near-Infrared Printed Photodetectors Based on Megasonically Processed RuCl3 Nanosheets

Electronic structure modification via intercalative electron-doping of α-RuCl3, a two-dimensional (2D) transition metal halide, imparts unique optoelectronic properties such as near-infrared (NIR) absorption. While bulk-scale RuCl3 nanosheet production has been established using conventional liquid phase exfoliation, printed devices compatible with scalable manufacturing remain unexplored. Here, we demonstrate fully aerosol-jet-printed (AJP) NIR photodetectors based on megasonically processed RuCl3 nanosheets. The NIR photoresponse is enhanced by intercalation-based electron-doping in two stages: primary electrochemical intercalation of bulk RuCl3 crystals with quaternary ammonium bromides followed by megasonic exfoliation and secondary intercalation with polyvinylpyrrolidone. The degree of doping is controlled by the starting size of the primary intercalant, as larger primary intercalants ultimately enable greater secondary intercalation and electron-doping. In this manner, the combination of two-step intercalative doping and megasonic processing results in fully printed photodetectors with NIR responsivity of 244 mA/W at 1550 nm, outperforming previous reports by more than an order of magnitude.

Low-Temperature Growth of Centimeter-Sized 2D PdSe2 by Self-Limiting Liquid-Phase Edge Epitaxy

Two-dimensional (2D) PdSe2 atomic crystals hold great potential for optoelectronic applications due to their bipolar electrical characteristics, tunable bandgap, high electron mobility, and exceptional air stability. Nevertheless, the scalable synthesis of large-area, high-quality 2D PdSe2 crystals using chemical vapor deposition (CVD) remains a significant challenge. Here, we present a self-limiting liquid-phase edge-epitaxy (SLE) low-temperature growth method to achieve high-quality, centimeter-sized PdSe2 films with single-crystal domain areas exceeding 30 μm. The SLE growth mechanism, clarified by theoretical calculations and time-of-flight secondary ion mass spectrometry (ToF-SIMS), reveals that hydrogen ions on the precursor surface inhibit vertical growth while promoting lateral growth. The as-grown PdSe2 few-layer exhibits a surface roughness of 1.20 nm and an average conductivity of 1.67 × 10-6 S/m, demonstrating their smoothness and uniformity. Temperature-dependent electrical measurements and transfer characteristic curves confirm the orthorhombic PdSe2's bipolar semiconductor behavior. The photodetector based on few-layer PdSe2 films exhibit excellent optoelectronic performance in the 405-1650 nm wavelength range, achieving a responsivity of 6262.37 A W-1, a detectivity of ∼1012 Jones under 1064 nm illumination, and a fast response time of 37.1 μs, making them highly suitable for broadband photodetection applications. This work provides valuable insights into the scalable synthesis of PdSe2 few-layers and establishes a foundation for the development of PdSe2-based integrated functional devices.

A critical review on printed electronics and its application

In light of the industry's environmental constraints, sustainable manufacturing technology has emerged as a critical goal for emerging applications. Due to the increased need for electronic production around the world, the requirement for environmentally safe technology is the necessity of this decade as the world government shifts towards sustainability in all manufacturing technology. Henceforth, printed electronics will be one such solution to regulate the electronic device and components production requirement of this decade. The article has discussed about the recent advances in inkjet-printed electronics across a wide range of electronics applications. We have discussed several inkjet printing inks and their formulation methods, which are required for minimizing environmental waste. In addition, we have discussed the future scope of printed electronics production and its impact on the economy as well as the environment.

Lanthanide Oxalates: From Single Crystals to 2D Functional Honeycomb Nanosheets

Oxalates are simple, low-cost but crucial compounds in the technology of lanthanides, actinides, and transition metals. Apart from using oxalate as a versatile ligand in coordination chemistry, simple oxalate salts are still under a scientific focus, linked with ion batteries, optical and magnetic materials, and, most importantly, industrial-technological mining and separation loops. The typically low solubility of oxalate salts is advantageous from the viewpoint of a convenient and affordable synthesis requiring only green solvents. Even though basic lanthanide oxalates have been known for decades, their structural descriptions have remained fuzzy, especially concerning water content and heavy lanthanide analogues. Herein, we present a newly developed preparation technique for large oxalate monocrystals applied to the whole lanthanide series. All of the structures were reviewed, and some new structures were determined. All of these oxalates exhibit a honeycomb structure with closed cavities containing water molecules. These honeycomb coordination polymers form a layered structure bonded by hydrogen bonds. Surprisingly, most oxalates can be easily exfoliated/delaminated in EtOH, forming colloids of up to single-layered nanosheets. Such a feature has never been described for 2D lanthanide oxalates and demonstrates a new form of applicability for them, e.g., for the construction of thin films or inkjet-printed layers using an extremely facile and economical preparation route.

Construction and Multifunctional Photonic Applications of Light Absorption-Enhanced Silicon-Based Schottky Coupled Structures

To expand the detection capabilities of silicon (Si)-based photodetector and address key scientific challenges such as low light absorption efficiency and short carrier lifetime in Si-based graphene photodetector. This work introduces a novel Si-based Schottky coupled structure by in situ growth of 3D-graphene and molybdenum disulfide quantum dots (MoS2 QDs) on Si substrates using chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques. The findings validate the "dual-enhanced absorption" effect, enhancing the understanding of the mechanisms that improve optoelectronic performance. The synergistic effect of 3D-graphene's natural nano-resonant cavity and MoS2 QDs enhances light absorption efficiency and extends carrier lifetime. Introducing MoS2 QDs broadens and intensifies the built-in electric field, promoting the separation of photogenerated electrons and holes. The photodetector exhibits a wideband light response in the wavelength range of 380-2200 nm. It stably outputs photocurrent under high-frequency (1 kHz) modulated laser (2200 nm), with a responsivity (R) of 40 mA W-1 and detectivity (D*) of 1.15 × 109 Jones. Photodetectors show the ability to process and encrypt complex binary signals and achieve versatility in "AND" gate and "OR" gate logic operations, as well as image sensing (240 × 200 pixels).

Advancements in Inkjet Printing of Metal- and Covalent-Organic Frameworks: Process Design and Ink Optimization

Metal-organic frameworks (MOFs) and covalent-organic frameworks (COFs) are highly versatile materials based on inorganic modes connected via organic linkers or purely via the connection of organic building blocks, respectively. This results in 3-D nanoporous frameworks, which, due to their combination of high porosity and variability of building blocks, can exhibit exceptional properties that make them attractive. Certain applications (e.g., in electronics and as membranes) require a thin film or even a patterned morphology on various substrates. Inkjet printing of MOFs has emerged as a simple and effective technique for the scalable production of a wide range of MOF (gradient) films and patterns on a wide range of substrates according to specific requirements. This review comprehensively reviews the achievements in inkjet printing of both MOFs and COFs. We discuss the different substrates, ink formulation, and hardware intertwined requirements needed to achieve high-resolution printing and obtain desired properties such as porosity, physical-mechanical characteristics, and uniform thickness. Crucial aspects related to ink formulation, such as colloidal stability and size control of MOFs and COFs, are discussed. Additionally, we highlight potential opportunities for furthering the development of inkjet printing of MOFs/COFs and critically assess the reporting of the printing procedures and characterization of the resultant materials. In this manner, this review aims to contribute to the advancements in understanding and optimization of inkjet printing of MOFs and COFs, as this technique holds great potential for diverse applications and functionalization of MOF/COF films and patterns.

Printed Two-Dimensional Materials for Flexible Photodetectors: Materials, Processes, and Applications

With the rapid development of micro-nano technology and wearable devices, flexible photodetectors (PDs) have drawn widespread interest in areas such as healthcare, consumer electronics, and intelligence interfaces. Two-dimensional (2D) materials with layered structures have excellent optoelectronic properties and mechanical flexibility, which attract a great deal of attention in flexible applications. Although photodetectors based on mechanically exfoliated 2D materials have demonstrated superior performance compared to traditional Si-based PDs, large-scale manufacturing and flexible integration remain significant challenges for achieving industrial production. The emerging various printing technology provides a low-cost and highly effective method for integrated manufacturing. In this review, we comprehensively introduce the most recent progress on printed flexible 2D material PDs. We first reviewed the most recent research on flexible photodetectors, in which the discussion is focused on substrate materials, functional materials, and performance figures of merits. Furthermore, the solution processing for 2D materials coupled with printing functional film strategies to produce PDs are summarized. Subsequently, the various applications of flexible PDs, such as image sensors, healthcare, and wearable electronics, are also summarized. Finally, we point out the potential challenges of the printed flexible 2D material PDs and expect this work to inspire the development of flexible PDs and promote the mass manufacturing process.

Ultrahigh-throughput cross-flow filtration of solution-processed 2D materials enabled by porous ceramic membranes

Printed electronics is a disruptive technology in multiple applications including environmental and biological sensors, flexible displays, and wearable diagnostic devices. With superlative electronic, optical, mechanical, and chemical properties, two-dimensional (2D) materials are promising candidates for printable electronic inks. While liquid-phase exfoliation (LPE) methods can produce electronic-grade 2D materials, conventional batch separation processes typically rely on centrifugation, which requires significant time and effort to remove incompletely exfoliated bulk powders, hindering the scale-up of 2D ink manufacturing. While cross-flow filtration (CFF) has emerged as a promising continuous flow separation method for solution-processed 2D nanosheets, previously demonstrated polymer CFF membranes necessitate low 2D nanosheet concentrations to avoid fouling, which ultimately limits mass throughput. Here, we demonstrate a fully flow-based, exfoliation-to-ink system for electronic-grade 2D materials using an integrated cross-flow separation and concentration system. To overcome the relatively low-throughput processing concentrations of incumbent polymer CFF membranes, we employ porous ceramic CFF membranes that are tolerant to 10-fold higher nanosheet concentrations and flow rates without compromising separation efficiency. Furthermore, we demonstrate a concentration method via cross-flow ultrafiltration, where the retentate can be directly formulated into printable inks with electronic-grade performance that meets or exceeds centrifugally produced inks. Life cycle assessment and technoeconomic analysis quantitatively confirm the advantages of ceramic versus polymer CFF membranes including reductions of 97%, 96%, 94%, and 93% for greenhouse gas emissions, water consumption, fossil fuel consumption, and specific production costs, respectively. Overall, this work presents an environmentally sustainable and cost-effective solution for the fabrication, separation, and printing of electronic-grade 2D materials.

2D Printed Plasmonic Nanoparticle Array Incorporated Formamidinium-Based High-Performance Self-Biased Perovskite Photodetector

Utilizing noble metal nanoparticles through novel technologies is a promising avenue for enhancing the performance of organic/inorganic photodetectors. This study investigates the performance enhancement of Formamidinium-based perovskite (Pe) photodetectors (PDs) through the incorporation of plasmonic silver nanoparticles (Ag NPs) arrays using a 2D printing technique. The incorporation of plasmonic Ag NPs leads to a major improvement in the performance of the planar PD device, which is attributed to increased light absorption, hot electron generation, and more efficient charge extraction and transport. The unique aspect of this study lies in the method of incorporating plasmonic NPs using a two-dimensional printing technology. This approach offers several advantages over traditional methods, including lower cost, nonvacuum operation, and compatibility with room temperature fabrication. The printed plasmon-enhanced optimized perovskite PD exhibits remarkable performance metrics, including a peak responsivity of 1.03 A/W at 5 V external bias, which is significantly high compared to the reported devices. Moreover, the PD demonstrates exceptional detectivity with a peak value of 3.7 × 1012 Jones at 5 V, highlighting its capability to detect ultralow light signals with high precision. The device can be reversibly switched between low and high conductance states, yielding a stable and repeatable Ilight/Idark ratio of 1.06 × 104. In addition, the integration of plasmonic nanoparticles imparts remarkable photovoltaic characteristics to the perovskite photodetector, enabling it to function as a self-biased device. The hybrid device demonstrates a peak responsivity of 15 mA/W, a high detectivity of 2.15 × 1011 Jones, and a significant on-off ratio of 2.23 × 103, all achieved at zero external bias. Overall, this study presents a significant advancement in the field of plasmon-enhanced Pe photodetection technology. By utilizing the benefits of printing technology to incorporate NPs, we have developed a high-performance PD that combines cost-effectiveness with exceptional performance. Thus, we believe that this study will pave the way for the development of a low-cost, high-performance plasmon-enhanced Pe-based PD.

High-performance flexible photodetectors based on CdTe/MoS2 heterojunction

Flexible photodetectors have attracted escalating attention due to their pivotal role in next-generation wearable optoelectronic devices. This work presents high-performance photodetector devices based on CdTe/MoS2 heterojunctions, showcasing outstanding photodetecting and distinctive mechanical properties. The MoS2 film was exfoliated from bulk layered MoS2 and covered by a sputtered ultrathin CdTe film (∼8.4 nm) to form a heterojunction. Benefitting from the photovoltaic effect induced by the built-in electrical field near the high-quality interface, the fabricated CdTe/MoS2 heterojunction photodetector can operate as a self-powered photodetector without any external bias voltage, especially showing a high photodetectivity of 5.84 × 1011 Jones, remarkable photoresponsivity of 270.3 mA W-1, fast photoresponse with a rise/fall time of ∼44.8/134.2 μs and excellent bending durability. These results demonstrate that the CdTe/MoS2 heterojunctions could have significant potential for future applications in optoelectronic devices.

Phase-Centric MOCVD Enabled Synthetic Approaches for Wafer-Scale 2D Tin Selenides

Following an initial nucleation stage at the flake level, atomically thin film growth of a van der Waals material is promoted by ultrafast lateral growth and prohibited vertical growth. To produce these highly anisotropic films, synthetic or post-synthetic modifications are required, or even a combination of both, to ensure large-area, pure-phase, and low-temperature deposition. A set of synthetic strategies is hereby presented to selectively produce wafer-scale tin selenides, SnSex (both x = 1 and 2), in the 2D forms. The 2D-SnSe2 films with tuneable thicknesses are directly grown via metal-organic chemical vapor deposition (MOCVD) at 200 °C, and they exhibit outstanding crystallinities and phase homogeneities and consistent film thickness across the entire wafer. This is enabled by excellent control of the volatile metal-organic precursors and decoupled dual-temperature regimes for high-temperature ligand cracking and low-temperature growth. In contrast, SnSe, which intrinsically inhibited from 2D growth, is indirectly prepared by a thermally driven phase transition of an as-grown 2D-SnSe2 film with all the benefits of the MOCVD technique. It is accompanied by the electronic n-type to p-type crossover at the wafer scale. These tailor-made synthetic routes will accelerate the low-thermal-budget production of multiphase 2D materials in a reliable and scalable fashion.

Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications

The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.

Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks

Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.

Printed MoSe2/GaAs Photodetector Enabling Ultrafast and Broadband Photodetection up to 1.5 μm

The development of high-performance and low-cost photodetectors (PDs) capable of detecting a broad range of wavelengths, from ultraviolet (UV) to near-infrared (NIR), is crucial for applications in sensing, imaging, and communication systems. This work presents a novel approach for printing a broadband PD based on a heterostructure of two-dimensional (2D) molybdenum diselenide (MoSe2) and gallium arsenide (GaAs). The fabrication process involves a precise technique to print MoSe2 nanoflower (NF) ink onto a prepatterned GaAs substrate. The resulting heterostructure exhibits unique properties, leveraging the exceptional electronic and optical characteristics of both GaAs and 2D MoSe2. The fabricated PD achieves an astounding on-off ratio of ∼105 at 5 V bias while demonstrating an exceptional on-off ratio of ∼104 at 0 V. The depletion region between GaAs and MoSe2 facilitates efficient charge generation and separation and collection of photogenerated carriers. This significantly improves the performance of the PD, resulting in a notably high responsivity across the spectrum. The peak responsivity of the device is 5.25 A/W at 5 V bias under 808 nm laser excitation, which is more than an order of magnitude higher than that of any commercial NIR PDs. Furthermore, the device demonstrates an exceptional responsivity of 0.36 A/W under an external bias of 0 V. The printing technology used here offers several advantages including simplicity, scalability, and compatibility with large-scale production. Additionally, it enables precise control over the placement and integration of the MoSe2 NF onto the GaAs substrate, ensuring uniformity and reliability in device performance. The exceptional responsivity across a broad spectral range (360-1550 nm) and the success of the printing technique make our MoSe2/GaAs heterostructure PD promising for future low-cost and efficient optoelectronic devices.

Pseudouridine-modified RNA probe for label-free electrochemical detection of nucleic acids on 2D MoS2 nanosheets

RNA modification, particularly pseudouridine (Ψ), has played an important role in the development of the mRNA-based COVID-19 vaccine. This is because Ψ enhances RNA stability against nuclease activity and decreases the anti-RNA immune response. Ψ also provides structural flexibility to RNA by enhancing base stacking compared with canonical nucleobases. In this report, we demonstrate the first application of pseudouridine-modified RNA as a probe (Ψ-RNA) for label-free nucleic acid biosensing. It is known that MoS2 has a differential affinity for nucleic acids, which may be translated into a unique electronic signal. Herein, the Ψ-RNA probe interacts with the pristine MoS2 surface and causes a change in interfacial electrochemical charge transfer in the MoS2 nanosheets. Compared with an unmodified RNA probe, Ψ-RNA exhibited faster adsorption and higher affinity for MoS2. Moreover, Ψ-RNA could bind to complementary RNA and DNA targets with almost equal affinity when engaged with the MoS2 surface. Ψ-RNA maintained robust interactions with the MoS2 surface following the hybridization event, perhaps through its extra amino group. The detection sensitivity of the Ψ-RNA/MoS2 platform was as low as 500 attomoles, while the results also indicate that the probe can distinguish between complementary targets, single mismatches, and non-complementary nucleic acid sequences with statistical significance. This proof-of-concept study shows that the Ψ-RNA probe may solve numerous problems of adsorption-based biosensing platforms due to its stability and structural flexibility.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography

Networks of solution-processed nanomaterials are becoming increasingly important across applications in electronics, sensing and energy storage/generation. Although the physical properties of these devices are often completely dominated by network morphology, the network structure itself remains difficult to interrogate. Here, we utilise focused ion beam - scanning electron microscopy nanotomography (FIB-SEM-NT) to quantitatively characterise the morphology of printed nanostructured networks and their devices using nanometre-resolution 3D images. The influence of nanosheet/nanowire size on network structure in printed films of graphene, WS2 and silver nanosheets (AgNSs), as well as networks of silver nanowires (AgNWs), is investigated. We present a comprehensive toolkit to extract morphological characteristics including network porosity, tortuosity, specific surface area, pore dimensions and nanosheet orientation, which we link to network resistivity. By extending this technique to interrogate the structure and interfaces within printed vertical heterostacks, we demonstrate the potential of this technique for device characterisation and optimisation.

Two-Dimensional Van Der Waals Thin Film and Device

In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.

Hybrid Data-Driven Discovery of High-Performance Silver Selenide-Based Thermoelectric Composites

Optimizing material compositions often enhances thermoelectric performances. However, the large selection of possible base elements and dopants results in a vast composition design space that is too large to systematically search using solely domain knowledge. To address this challenge, a hybrid data-driven strategy that integrates Bayesian optimization (BO) and Gaussian process regression (GPR) is proposed to optimize the composition of five elements (Ag, Se, S, Cu, and Te) in AgSe-based thermoelectric materials. Data is collected from the literature to provide prior knowledge for the initial GPR model, which is updated by actively collected experimental data during the iteration between BO and experiments. Within seven iterations, the optimized AgSe-based materials prepared using a simple high-throughput ink mixing and blade coating method deliver a high power factor of 2100 µW m-1 K-2 , which is a 75% improvement from the baseline composite (nominal composition of Ag2 Se1 ). The success of this study provides opportunities to generalize the demonstrated active machine learning technique to accelerate the development and optimization of a wide range of material systems with reduced experimental trials.

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors

The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.

Laser-Induced Graphene-based Flexible Substrate with Photothermal Conversion and Photoresponse Performance on Polyimide Film

Graphene-based flexible electronic devices are widely used in photoelectric components and photodetectors. However, it remains a huge challenge to fabricate graphene-based flexible devices efficiently and economically. Compared with the flexible electronic devices made by combining the flexible film with metal and semiconductor materials, the graphene-based flexible substrate (GFS) can be efficiently and conveniently induced by laser direct writing on the flexible film. In this paper, the GFS with a resistance of as low as 15 Ω was successfully induced by CO2 laser on a polyimide (PI) film in one step, and the GFS surface covered with carbon nanoparticles (GFSC) with a resistance of 25 Ω was further induced by femtosecond (fs) laser reprocessing. Benefiting from the laser-induced porous graphene structure, the absorptivity of GFS is up to 90% in the wavelength range of 200-2000 nm. The formation of carbon nanoparticles on the GFSC surface further improves the absorptivity to 97.5% in a wide spectral range. Under white light irradiation of 1 sun, the surface temperature of GFS reaches 65.7 °C and that of GFSC is up to 70.8 °C within 2 min. Under the irradiation of a light-emitting diode (LED) with a central wavelength of 365 nm, the highest photoresponsivity of GFS and GFSC was 8.8 and 1.3 mA/W, respectively. The response time and recovery time of GFS are 8 and 7.3 s, and those of GFSC are 8.3 and 6.7 s, respectively. Importantly, GFSC has a more stable photoresponse performance due to the better electron capture and transfer capability of carbon nanoparticles. It is believed that GFS and GFSC have great application potential in flexible photodetectors and sensors.

High-Throughput Mechanical Exfoliation for Low-Cost Production of van der Waals Nanosheets

A method is presented for scaling up the production of flakes of van der Waals materials via mechanical exfoliation. Using a roll-to-roll setup and an automatized, massive parallel exfoliation process, adhesive tapes with a high density of nanosheets of van der Waals materials are produced. The technique allows for obtaining a good trade-off between large lateral size and excellent area scalability, while also maintaining low cost. The potential of the method is demonstrated through the successful fabrication of field effect transistors and flexible photodetectors in large batches. This low-cost method to produce large area films out of mechanically exfoliated flakes is very general, and it can be applied to a variety of substrates and van der Waals materials and, moreover, it can be used to combine different van der Waals materials on top of each other. Therefore, it is believed that this production method opens an interesting avenue for fabrication of low-cost devices while maintaining a good scalability and performance.

Electroluminescence from Megasonically Solution-Processed MoS2 Nanosheet Films

Due to their superior optoelectronic properties, monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for electroluminescent devices. However, challenges in isolating optoelectronically active TMD monolayers using scalable liquid phase exfoliation have precluded electroluminescence in large-area, solution-processed TMD films. Here, we overcome these limitations and demonstrate electroluminescence from molybdenum disulfide (MoS2) nanosheet films by employing a monolayer-rich MoS2 ink produced by electrochemical intercalation and megasonic exfoliation. Characteristic monolayer MoS2 photoluminescence and electroluminescence spectral peaks at 1.88-1.90 eV are observed in megasonicated MoS2 films, with the emission intensity increasing with film thickness over the range 10-70 nm. Furthermore, employing a vertical light-emitting capacitor architecture enables uniform electroluminescence in large-area devices. These results indicate that megasonically exfoliated MoS2 monolayers retain their direct bandgap character in electrically percolating thin films even following multistep solution processing. Overall, this work establishes megasonicated MoS2 inks as an additive manufacturing platform for flexible, patterned, and miniaturized light sources that can likely be expanded to other TMD semiconductors.

A fully printed ultrafast Si/WS2 quantum dot photodetector with very high responsivity over the UV to near-infrared region

Two-dimensional (2D) semiconducting material-based photodetectors (PDs) with high responsivity and fast photo-response are of great interest for various applications such as optical communications, biomedical imaging, security surveillance, environmental monitoring, etc. Additive manufacturing such as 2D printing is a potentially less cumbersome and cost-effective alternative to conventional microdevice fabrication processes used in the production of PDs. Here, we have fabricated a Si/WS2 quantum dot-based heterostructure PD with a very short electrode gap of 40 μm by a simple printing process. The printed p-Si/n-WS2 PD shows an excellent photo-to-dark current ratio of 5121 under 405 nm illumination (23.8 mW cm-2). The printed photodetector exhibits a peak responsivity of 126 A W-1 and a peak detectivity of 9.24 × 1012 Jones over a very broad wavelength range (300-1100 nm), which is much superior to commercial Si PDs. A high external quantum efficiency of 3.9 × 104% and an ultrafast photoresponse (7.8 μs rise time and 9.5 μs fall time) make the device an attractive candidate as an efficient photodetector. The origin of high-performance photodetection is traced to a nearly defect-free interface at the heterojunction, leading to highly efficient charge separation and high photocurrent. Finally, the 2D-printed device exhibits good photodetection even in self-powered conditions, which is very attractive.

Giant Superlinear Power Dependence of Photocurrent Based on Layered Ta2 NiS5 Photodetector

Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power-dependent photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. This work reports the giant superlinear power dependence of photocurrent based on multilayer Ta₂ NiS₅ . While the fabricated photodetector exhibits good sensitivity (3.1 mS W^-1 per □) and fast photoresponse (31 µs), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from 1.5 to 200 µW µm^-2 , the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, prominent superlinearity is observed with a giant power exponent of γ = 1.5. The unusual photoresponse can be explained by a two-recombination-center model where density of states of the recombination centers (RC) effectively closes all recombination channels. The photodetector is integrated into camera for taking photos with enhanced contrast due to superlinearity. This work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.

Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors

Printed electronics, which fabricate electrical components and circuits on various substrates by leveraging functional inks and advanced printing technologies, have recently attracted tremendous attention due to their capability of large-scale, high-speed, and cost-effective manufacturing and also their great potential in flexible and wearable devices. To further achieve multifunctional, practical, and commercial applications, various printing technologies toward smarter pattern-design, higher resolution, greater production flexibility, and novel ink formulations toward multi-functionalities and high quality have been insensitively investigated. 2D materials, possessing atomically thin thickness, unique properties and excellent solution-processable ability, hold great potential for high-quality inks. Besides, the great variety of 2D materials ranging from metals, semiconductors to insulators offers great freedom to formulate versatile inks to construct various printed electronics. Here, a detailed review of the progress on 2D material inks formulation and its printed applications has been provided, specifically with an emphasis on emerging printed memristors. Finally, the challenges facing the field and prospects of 2D material inks and printed electronics are discussed.

Edge and Interface Resistances Create Distinct Trade-Offs When Optimizing the Microstructure of Printed van der Waals Thin-Film Transistors

Inks based on two-dimensional (2D) materials could be used to tune the properties of printed electronics while maintaining compatibility with scalable manufacturing processes. However, a very wide range of performances have been reported in printed thin-film transistors in which the 2D channel material exhibits considerable variation in microstructure. The lack of quantitative physics-based relationships between film microstructure and transistor performance limits the codesign of exfoliation, sorting, and printing processes to inefficient empirical approaches. To rationally guide the development of 2D inks and related processing, we report a gate-dependent resistor network model that establishes distinct microstructure-performance relationships created by near-edge and intersheet resistances in printed van der Waals thin-film transistors. The model is calibrated by analyzing electrical output characteristics of model transistors consisting of overlapping 2D nanosheets with varied thicknesses that are mechanically exfoliated and transferred. Kelvin probe force microscopy analysis on the model transistors leads to the discovery that the nanosheet edges, not the intersheet resistance, limit transport due to their impact on charge carrier depletion and scattering. Our model suggests that when transport in a 2D material network is limited by the near-edge resistance, the optimum nanosheet thickness is dictated by a trade-off between charged impurity screening and gate screening, and the film mobilities are more sensitive to variations in printed nanosheet density. Removal of edge states can enable the realization of higher mobilities with thinner nanosheets due to reduced junction resistances and reduced gate screening. Our analysis of the influence of nanosheet edges on the effective film mobility not only examines the prospects of extant exfoliation methods to achieve the optimum microstructure but also provides important perspectives on processes that are essential to maximizing printed film performance.

Hierarchical Nanoscale Structuring of Solution-Processed 2D van der Waals Networks for Wafer-Scale, Stretchable Electronics

Two-dimensional (2D) semiconductors are promising for next-generation electronics that are lightweight, flexible, and stretchable. Achieving stretchability with suppressed crack formation, however, is still difficult without introducing lithographically etched micropatterns, which significantly reduces active device areas. Herein, we report a solution-based hierarchical structuring to create stretchable semiconducting films that are continuous over wafer-scale areas via self-assembly of two-dimensional nanosheets. Electrochemically exfoliated MoS₂ nanosheets with large lateral sizes (∼1 μm) are first assembled into a uniform film on a prestrained thermoplastic substrate, followed by strain relief of the substrate to create nanoscale wrinkles. Subsequent strain-relief cycles with the presence of soluble polymer films produce hierarchical wrinkles with multigenerational structures. Stretchable MoS₂ films are then realized by curing an elastomer directly on the wrinkled surface and dissolving the thermoplastic. Three-generation hierarchical MoS₂ wrinkles are resistant to cracking up to nearly 100% substrate stretching and achieve drastically enhanced photoresponsivity compared to the flat counterpart over the visible and NIR regimes, while the flat MoS₂ film is beneficial in creating strain sensors because of its strain-dependent electrical response.

Interfacial Assembly of Ti3 C2 Tx /ZnIn2 S4 Heterojunction for High-Performance Photodetectors

Two-dimensional (2D) materials have emerged as prospective candidates for electronics and optoelectronics applications as they can be easily fabricated through liquid exfoliation and used to fabricate various structures by further subsequent processing methods in addition to their extraordinary and unique optoelectronic properties. Herein, the Ti3 C2 Tx /ZIS heterostructure with nanometer-thick Ti3 C2 Tx -MXene and ZnIn2 S4 (ZIS) films is fabricated by successive interfacial assembly of liquid exfoliated 2D MXene and ZnIn2 S4 nanoflakes. Benefiting from the superior light-harvesting capability and low dark current of ZnIn2 S4 , the limited absorbance, large scattering coefficient, and high dark current disadvantages of MXene are ameliorated. Meanwhile, the separation and transport of photogenerated carriers in ZnIn2 S4 are improved due to the excellent electrical conductivity of Ti3 C2 Tx nanoflakes. As a result, the as-prepared Ti3 C2 Tx /ZIS heterostructure photodetector has excellent optoelectronic characteristics in terms of a high responsivity of 1.04 mA W-1 , a large specific detectivity up to 1 × 1011  Jones, a huge on/off ratio at around 105 , and an ultralow dark current at ≈10-12  A. This work demonstrates a convenient method to construct heterostructured photodetectors by liquid exfoliated 2D nanoflakes, the as-fabricated Ti3 C2 Tx /ZIS heterostructured photodetectors show promising application potential for low-cost, reliable, and high-performance photodetectors.

Non-equilibrium spin-transport properties of Co/phosphorene/Co MTJ with non-collinear electrodes under mechanical bending

Monolayer phosphorene has outstanding mechanical flexibility, making it rather attractive in flexible spintronics that are based on 2D materials. Here, we report a first-principles study on non-equilibrium electronic-transport properties of the Co/phosphorene/Co magnetic tunnel junction (MTJ) with two α-Co electrodes. The magnetic moments of the two electrodes are considered in the parallel configuration (PC) and the anti-parallel configuration (APC). The tunneling current through the MTJ is investigated at a small bias from 0 to 40 mV when mechanical bending is applied on the MTJ with different central angle (θ) values. For both the PC and APC, the tunneling current increases evidently and monotonously with increasing mechanical bending for 25° < θ < 40°, as compared to that without bending, which is mainly due to the reduced tunnel barrier. In the PC, the spin-injection efficiency (SIE) of the current is largely increased at a small bias from 0 to 40 mV for 25° ≤ θ ≤ 30° with a maximum of 90%, while the SIE is overall increased under all mechanical bending angles for the APC. The tunnel magnetoresistance is decreased with an increasing bias voltage, which can be largely enhanced for θ ≥ 25°, especially at small bias. Our results indicate that the Co/phosphorene/Co MTJ has promising applications in flexible low-power spintronic devices.

Inkjet printing of two-dimensional van der Waals materials: a new route towards emerging electronic device applications

Two-dimensional (2D) van der Waals (vdW) materials are considered one of the most promising candidates to realize emerging electrical applications. Although until recently, much effort has been dedicated to demonstrating high-performance single 2D vdW devices, associated with rapid progress in 2D vdW materials, demands for their large-scale practical applications have noticeably increased from a manufacturing perspective. Drop-on-demand inkjet printing can be the most feasible solution by exploiting the advantages of layered 2D contacts and advanced 2D vdW ink formulations. This review presents recent achievements in inkjet-printed 2D vdW material-based device applications. A brief introduction to 2D vdW materials and inkjet printing principles, followed by various ink formulation methods, is first presented. Then, the state-of-the-art inkjet-printed 2D vdW device applications and their remaining technical issues are highlighted. Finally, prospects and challenges to be overcome to demonstrate fully inkjet-printed, high-performance 2D vdW devices are also discussed.

All-Printed Ultrahigh-Responsivity MoS2 Nanosheet Photodetectors Enabled by Megasonic Exfoliation

Printed 2D materials, derived from solution-processed inks, offer scalable and cost-effective routes to mechanically flexible optoelectronics. With micrometer-scale control and broad processing latitude, aerosol-jet printing (AJP) is of particular interest for all-printed circuits and systems. Here, AJP is utilized to achieve ultrahigh-responsivity photodetectors consisting of well-aligned, percolating networks of semiconducting MoS₂ nanosheets and graphene electrodes on flexible polyimide substrates. Ultrathin (≈1.2 nm thick) and high-aspect-ratio (≈1 μm lateral size) MoS₂ nanosheets are obtained by electrochemical intercalation followed by megasonic atomization during AJP, which not only aerosolizes the inks but also further exfoliates the nanosheets. The incorporation of the high-boiling-point solvent terpineol into the MoS₂ ink is critical for achieving a highly aligned and flat thin-film morphology following AJP as confirmed by grazing-incidence wide-angle X-ray scattering and atomic force microscopy. Following AJP, curing is achieved with photonic annealing, which yields quasi-ohmic contacts and photoactive channels with responsivities exceeding 10³  A W^-1 that outperform previously reported all-printed visible-light photodetectors by over three orders of magnitude. Megasonic exfoliation coupled with properly designed AJP ink formulations enables the superlative optoelectronic properties of ultrathin MoS₂ nanosheets to be preserved and exploited for the scalable additive manufacturing of mechanically flexible optoelectronics.

Tabletop Fabrication of High-Performance MoS2 Field-Effect Transistors

A simple way to prepare field-effect transistors (FETs) using MoS₂ on tabletop is presented. Conductive silver paste was applied onto chemical vapor deposition (CVD)-grown MoS₂ as Ohmic-contact electrodes. Heating the device in vacuum further enhances the performance without damage. The final performance is comparable to that of the SiO₂-backgated devices prepared by lithography and metal evaporators. The role of the silver paste and heat treatment in vacuum is investigated by device and spectroscopic analysis.

Charge-Density-Wave Thin-Film Devices Printed with Chemically Exfoliated 1T-TaS2 Ink

We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin-film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS₂ crystals to produce fillers with nm-scale thickness and μm-scale lateral dimensions. Exfoliated 1T-TaS₂ was dispersed in a mixture of isopropyl alcohol and ethylene glycol to allow fine-tuning of filler particles thermophysical properties for inkjet printing. The temperature-dependent electrical and current fluctuation measurements of printed thin films demonstrated that the charge-density-wave properties of 1T-TaS₂ are preserved after processing. The functionality of the printed thin-film devices can be defined by the nearly commensurate to the commensurate charge-density-wave phase transition of individual exfoliated 1T-TaS₂ filler particles rather than by electron-hopping transport between them. The obtained results are important for the development of printed electronics with diverse functionality achieved by the incorporation of quasi-two-dimensional van der Waals quantum materials.

Spontaneous formation of gold nanoparticles on MoS2 nanosheets and its impact on solution-processed optoelectronic devices

Understanding size-dependent properties of 2D materials is crucial for their optimized performance when incorporated through solution routes. In this work, the chemical nature of MoS₂ as a function of nanosheet size is investigated through the spontaneous reduction of chloroauric acid. Microscopy studies suggest higher gold nanoparticle decoration density in smaller nanosheet sizes, resulting from higher extent of reduction. Further corroboration through surface-enhanced Raman scattering using the gold-decorated MoS₂ nanosheets as substrates exhibited an enhancement factor of 1.55 × 10⁶ for smaller nanosheets which is 7-fold higher as compared to larger nanosheets. These plasmonic-semiconductor hybrids are utilized for photodetection, where decoration is found to impact the photoresponse of smaller nanosheets the most, and is optimized to achieve responsivity of 367.5 mAW^-1 and response times of ∼17 ms. The simplistic modification via solution routes and its impact on optoelectronic properties provides an enabling platform for 2D materials-based applications.

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Reducing agent-free Au nanoparticle decoration on aqueously dispersed 2H-MoS₂.

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Control on Au nanoparticle decoration density through nanosheet size-selection.

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SERS as a probe for determining the decoration density along with microscopy.

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Enhanced photodetection by spontaneous modification with Au on MoS₂ films.

Unraveling Heat Transport and Dissipation in Suspended MoSe2 from Bulk to Monolayer

Understanding heat flow in layered transition metal dichalcogenide (TMD) crystals is crucial for applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood, in particular how transport is affected by material thickness and the material's environment. This combined experimental-theoretical study establishes a unifying physical picture of the intrinsic lattice thermal conductivity of the representative TMD MoSe₂ . Thermal conductivity measurements using Raman thermometry on a large set of clean, crystalline, suspended crystals with systematically varied thickness are combined with ab initio simulations with phonons at finite temperature. The results show that phonon dispersions and lifetimes change strongly with thickness, yet the thinnest TMD films exhibit an in-plane thermal conductivity that is only marginally smaller than that of bulk crystals. This is the result of compensating phonon contributions, in particular heat-carrying modes around ≈0.1 THz in (sub)nanometer thin films, with a surprisingly long mean free path of several micrometers. This behavior arises directly from the layered nature of the material. Furthermore, out-of-plane heat dissipation to air molecules is remarkably efficient, in particular for the thinnest crystals, increasing the apparent thermal conductivity of monolayer MoSe₂ by an order of magnitude. These results are crucial for the design of (flexible) TMD-based (opto-)electronic applications.

Halide Perovskite Nanocrystal-Enabled Stabilization of Transition Metal Dichalcogenide Nanosheets

Transition metal dichalcogenide (TMD) nanosheets exfoliated in the liquid phase are of significant interest owing to their potential for scalable and flexible photoelectronic applications. Although various dispersants such as surfactants, oligomers, and polymers are used to obtain highly exfoliated TMD nanosheets, most of them are electrically insulating and need to be removed; otherwise, the photoelectric properties of the TMD nanosheets degrade. Here, inorganic halide perovskite nanocrystals (NCs) of CsPbX₃  (X = Cl, Br, or I) are presented as non-destructive dispersants capable of dispersing TMD nanosheets in the liquid phase and enhancing the photodetection properties of the nanosheets, thus eliminating the need to remove the dispersant. MoSe₂ nanosheets dispersed in the liquid phase are adsorbed with CsPbCl₃  NCs. The CsPbCl₃ nanocrystals on MoSe₂ efficiently withdraw electrons from the nanosheets, and suppress the dark current of the MoSe₂ nanosheets, leading to flexible near-infrared MoSe₂  photodetectors with a high ON/OFF photocurrent ratio and detectivity. Moreover, lanthanide ion-doped CsPbCl₃  NCs enhance the ON/OFF current ratio to >10⁶ . Meanwhile, the dispersion stability of the MoSe₂  nanosheets exfoliated with the perovskite NCs is sufficiently high.

Ink Formulation and Printing Parameters for Inkjet Printing of Two Dimensional Materials: A Mini Review

Inkjet printing of two-dimensional (2D) material has been a center of interest for wearable electronics and has become a promising platform for next-generation technologies. Despite the enormous progress made in printed 2D materials, there are still challenges in finding the optimal printing conditions involving the ink formulation and printing parameters. Adequate ink formulation and printing parameters for target 2D materials rely on empirical studies and repeated trials. Therefore, it is essential to compile promising strategies for ink formulation and printing parameters. In this context, this review discusses the optimal ink formulations to prepare stable ink and steady ink jetting and then explores the critical printing parameters for fabricating printed 2D materials of a high quality. The summary and future prospects for inkjet-printed 2D materials are also addressed.

Recent Advances on 2D Materials towards 3D Printing

In recent years, 2D materials have been implemented in several applications due to their unique and unprecedented properties. Several examples can be named, from the very first, graphene, to transition-metal dichalcogenides (TMDs, e.g., MoS2), two-dimensional inorganic compounds (MXenes), hexagonal boron nitride (h-BN), or black phosphorus (BP). On the other hand, the accessible and low-cost 3D printers and design software converted the 3D printing methods into affordable fabrication tools worldwide. The implementation of this technique for the preparation of new composites based on 2D materials provides an excellent platform for next-generation technologies. This review focuses on the recent advances of 3D printing of the 2D materials family and its applications; the newly created printed materials demonstrated significant advances in sensors, biomedical, and electrical applications.

Sequence-Independent DNA Adsorption on Few-Layered Oxygen-Functionalized Graphene Electrodes: An Electrochemical Study for Biosensing Application

DNA is strongly adsorbed on oxidized graphene surfaces in the presence of divalent cations. Here, we studied the effect of DNA adsorption on electrochemical charge transfer at few-layered, oxygen-functionalized graphene (GO_x) electrodes. DNA adsorption on the inkjet-printed GO_x electrodes caused amplified current response from ferro/ferricyanide redox probe at concentration range 1 aM–10 nM in differential pulse voltammetry. We studied a number of variables that may affect the current response of the interface: sequence type, conformation, concentration, length, and ionic strength. Later, we showed a proof-of-concept DNA biosensing application, which is free from chemical immobilization of the probe and sensitive at attomolar concentration regime. We propose that GO_x electrodes promise a low-cost solution to fabricate a highly sensitive platform for label-free and chemisorption-free DNA biosensing.

Liquid-Exfoliated 2D Materials for Optoelectronic Applications

Two-dimensional (2D) materials have attracted tremendous research attention in recent days due to their extraordinary and unique properties upon exfoliation from the bulk form, which are useful for many applications such as electronics, optoelectronics, catalysis, etc. Liquid exfoliation method of 2D materials offers a facile and low-cost route to produce large quantities of mono- and few-layer 2D nanosheets in a commercially viable way. Optoelectronic devices such as photodetectors fabricated from percolating networks of liquid-exfoliated 2D materials offer advantages compared to conventional devices, including low cost, less complicated process, and higher flexibility, making them more suitable for the next generation wearable devices. This review summarizes the recent progress on metal-semiconductor-metal (MSM) photodetectors fabricated from percolating network of 2D nanosheets obtained from liquid exfoliation methods. In addition, hybrids and mixtures with other photosensitive materials, such as quantum dots, nanowires, nanorods, etc. are also discussed. First, the various methods of liquid exfoliation of 2D materials, size selection methods, and photodetection mechanisms that are responsible for light detection in networks of 2D nanosheets are briefly reviewed. At the end, some potential strategies to further improve the performance the devices are proposed.

Nanoscale Bilayer Mechanical Lithography Using Water as Developer

Sustainability has become a critical concern in the semiconductor industry as hazardous wastes released during the manufacturing process of semiconductor devices have an adverse impact on human beings and the environment. The use of hazardous solvents in existing fabrication processes also restricts the use of polymer substrates because of their low chemical resistance to such solvents. Here, we demonstrate an environmentally friendly mechanical, bilayer lithography that uses just water for development and lift-off. We show that we are able to create arbitrary patterns achieving resolution down to 310 nm. We then demonstrate the use of this technique to create functional devices by fabricating a MoS₂ photodetector on a polyethylene terephthalate (PET) substrate with measured response times down to 42 ms.

Solution-Processed MoS2 Film with Functional Interfaces via Precursor-Assisted Chemical Welding

Molybdenum disulfide (MoS₂) presents fascinating properties for next-generation applications in diverse fields. However, fully exploiting the best properties of MoS₂ in largescale practical applications still remains a challenge due to lack of proper processing methods. Solution-based processing can be a promising route for scalable production of MoS₂ nanosheets, but the resulting assembled film possesses an enormous number of interfaces that significantly compromise the intrinsic electrical properties. Herein, we demonstrate the solution processing of MoS₂ and subsequent precursor-assisted chemical welding to form defective MoS_2-x at the nanosheet interfaces. The formation of defective MoS_2-x significantly reduces the electrical contact resistances, and thus the chemically welded MoS₂ film exhibits more than 2 orders of magnitude improved electrical conductivity. Furthermore, the chemical welding provides MoS_2-x interface induced additional defect originated functionalities for diverse applications such as broadband photodetection over the near-infrared range and improved electrocatalytic activity for hydrogen evolution reactions. Overall, this precursor-assisted chemical welding strategy can be a facile route to produce high-quality MoS₂ films with low-quality defective MoS_2-x at the interfaces having multifunctionalities in electronics, optoelectronics, and electrocatalysis.

Additive-Enhanced Exfoliation for High-Yield 2D Materials Production

The success of van-der-Waals electronics, which combine large-scale-deposition capabilities with high device performance, relies on the efficient production of suitable 2D materials. Shear exfoliation of 2D materials' flakes from bulk sources can generate 2D materials with low amounts of defects, but the production yield has been limited below industry requirements. Here, we introduce additive-assisted exfoliation (AAE) as an approach to significantly increase the efficiency of shear exfoliation and produce an exfoliation yield of 30%. By introducing micrometer-sized particles that do not exfoliate, the gap between rotor and stator was dynamically reduced to increase the achievable shear rate. This enhancement was applied to WS2 and MoS2 production, which represent two of the most promising 2D transition-metal dichalcogenides. Spectroscopic characterization and cascade centrifugation reveal a consistent and significant increase in 2D material concentrations across all thickness ranges. Thus, the produced WS2 films exhibit high thickness uniformity in the nanometer-scale and can open up new routes for 2D materials production towards future applications.

Label-free Electrochemical Detection of CGG Repeats on Inkjet Printable 2D Layers of MoS2

Flexible and ultrasensitive biosensing platforms capable of detecting a large number of trinucleotide repeats (TNRs) are crucial for future technology development needed to combat a variety of genetic disorders. For example, trinucleotide CGG repeat expansions in the FMR1 gene can cause Fragile X syndrome (FXS) and Fragile X-associated tremor/ataxia syndrome (FXTAS). Current state-of-the-art technologies to detect repeat sequences are expensive, while relying on complicated procedures, and prone to false negatives. We reasoned that two-dimensional (2D) molybdenum sulfide (MoS₂) surfaces may be useful for label-free electrochemical detection of CGG repeats due to its high affinity for guanine bases. Here, we developed a low-cost and sensitive wax-on-plastic electrochemical sensor using 2D MoS₂ ink for the detection of CGG repeats. The ink containing few-layered MoS₂ nanosheets was prepared and characterized using optical, electrical, electrochemical, and electron microscopic methods. The devices were characterized by electron microscopic and electrochemical methods. Repetitive CGG DNA was adsorbed on a MoS₂ surface in a high cationic strength environment and the electrocatalytic current of the CGG/MoS₂ interface was recorded using a soluble Fe(CN)₆^-3/-4 redox probe by differential pulse voltammetry (DPV). The dynamic range for the detection of prehybridized duplexes ranged from 1 aM to 100 nM with a 3.0 aM limit of detection. A detection range of 100 fM to 1 nM was recorded for surface hybridization events. Using this method, we were able to observe selectivity of MoS₂ for CGG repeats and distinguish nonpathogenic from disease-associated repeat lengths. The detection of CGG repeat sequences on inkjet printable 2D MoS₂ surfaces is a forward step toward developing chip-based rapid and label-free sensors for the detection of repeat expansion sequences.

An Atomically Thin Optoelectronic Machine Vision Processor

2D semiconductors, especially transition metal dichalcogenide (TMD) monolayers, are extensively studied for electronic and optoelectronic applications. Beyond intensive studies on single transistors and photodetectors, the recent advent of large-area synthesis of these atomically thin layers has paved the way for 2D integrated circuits, such as digital logic circuits and image sensors, achieving an integration level of ≈100 devices thus far. Here, a decisive advance in 2D integrated circuits is reported, where the device integration scale is increased by tenfold and the functional complexity of 2D electronics is propelled to an unprecedented level. Concretely, an analog optoelectronic processor inspired by biological vision is developed, where 32 × 32 = 1024 MoS₂ photosensitive field-effect transistors manifesting persistent photoconductivity (PPC) effects are arranged in a crossbar array. This optoelectronic processor with PPC memory mimics two core functions of human vision: it captures and stores an optical image into electrical data, like the eye and optic nerve chain, and then recognizes this electrical form of the captured image, like the brain, by executing analog in-memory neural net computing. In the highlight demonstration, the MoS₂ FET crossbar array optically images 1000 handwritten digits and electrically recognizes these imaged data with 94% accuracy.

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.

Inkjet-Printing Technology for Supercapacitor Application: Current State and Perspectives

Inkjet-printing (IJP) technology is recognized as a significant breakthrough in manufacturing high-performance electrochemical energy storage systems. In comparison to conventional fabrication protocols, this printing technique offers various advantages, such as contact-less high-resolution patterning capability; low-cost, controlled material deposition; process simplicity; and compatibility with a variety of substrates. Due to these outstanding merits, significant research efforts have been devoted to utilizing IJP technology in developing electrochemical energy storage devices, particularly in supercapacitors (SCs). These attempts have focused on fabricating the key components of SCs, including electrode, electrolyte, and current collector, through rational formulation and patterning of functional inks. In an attempt to further expand the material design strategy and accelerate technology development, it is urgent and essential to obtain an in-depth insight into the recent developments of inkjet-printed SCs. Toward this aim, first, a general introduction to the fundamental principles of IJP technology is provided. After that, the latest achievements in IJP of capacitive energy storage devices are systematically summarized and discussed with a particular emphasis on the design of printable functional materials, the printing process, and capacitive performance of inkjet-printed SCs. To close, existing challenges and future research trends for developing state-of-the-art inkjet-printed SCs are proposed.

Ultrafast Exfoliation of 2D Materials by Solvent Activation and One-Step Fabrication of All-2D-Material Photodetectors by Electrohydrodynamic Printing

Large-scale liquid exfoliation of two-dimensional materials such as molybdenum disulfide, tungsten disulfide, and graphene for the synthesis of printable inks is still inefficient due to many hours of exfoliation time needed to achieve a highly concentrated dispersion that is useful for printing. Here, we report that soaking the bulk 2D material powders in a variety of solvents (water, ethanol, isopropanol, acetone, methanol, dimethylformamide, N-methyl pyrrolidone, and hexane) briefly as short as 5 min "activates" them to be much more easily exfoliated afterward. The unsoaked powder yielded a negligible concentration of dispersed nanosheets (less than 0.01 mg/mL) even after long hours of sonication, while the powders soaked in water resulted in dispersed nanosheets of 1.21 mg/mL for MoS₂ and 1.28 mg/mL for WS₂ after 6 and 4 h of sonication, respectively, a more than 100 time increase. For graphene, soaking in methanol for 5 min prior to sonication for 6 h yielded an increase in the dispersed nanosheet concentration to 0.13 mg/mL, a more than 10 time increase in concentration. The enhanced exfoliation is originated not from the intercalated solvent molecules but from the slightly increased d-spacing of the bulk powders during soaking due to the different dielectric environments in the solvents, which assists in the exfoliation afterward. We further fabricated MoS₂ and WS₂ photodetectors with graphene as electrodes by one-step electrohydrodynamic (EHD) printing using highly concentrated inks (>2 mg/mL) obtained by ultrafast liquid exfoliation, which have light sensitivity down to 0.05 sun. We believe that this ultrafast exfoliation technique combined with the one-step device printing technique enables a big step toward the mass production of functional devices fabricated from solution-processed 2D material inks.