Moiré Patterns in 2D Materials: A Review

Clean Interfaces in Twisted Bilayer Graphene via Elastocapillary-Driven Directional Motion of Nanodroplets

Layered van der Waals (vdW) materials, characterized by an ultrahigh surface-to-volume ratio and weak interlayer interaction, readily encapsulate ambient contaminants, resulting in the formation of nanodroplets. These intercalated nanodroplets disrupt the interlayer coupling, thereby degrading the material's physical properties. Consequently, achieving an ultraclean vdW interface over a substantial area, particularly in suspended vdW materials, presents a significant challenge. In this study, we propose a novel strategy that utilizes the uniaxial stretching-induced curvature effect to direct the motion of nanodroplets within suspended twisted bilayer graphene (TBLG). This phenomenon is associated with elastocapillarity, a connection further evidenced by observable changes in the droplets' morphology. These deformed nanodroplets can move directionally in response to the thermally stimulated opening of the vdW interface, eventually leading to an ultraclean interface of TBLG sheets. Our approach not only facilitates mass transport at the atomic channels but also enables the achievement of clean vdW interfaces on a large scale.

Interface phenomena and emerging functionalities in ferroelectric oxide based heterostructures

Capitalizing on the nonvolatile, nanoscale controllable polarization, ferroelectric perovskite oxides can be integrated with various functional materials for designing emergent phenomena enabled by charge, lattice, and polar symmetry mediated interfacial coupling, as well as for constructing novel energy-efficient electronics and nanophotonics with programmable functionalities. When prepared in thin film or membrane forms, the ferroelectric instability of these materials is highly susceptible to the interfacial electrostatic and mechanical boundary conditions, resulting in tunable polarization fields and Curie temperatures and domain formation. This review focuses on two types of ferroelectric oxide-based heterostructures: the epitaxial perovskite oxide heterostructures and the ferroelectric oxides interfaced with two-dimensional van der Waals materials. The topics covered include the basic synthesis methods for ferroelectric oxide thin films, membranes, and heterostructures, characterization of their properties, and various emergent phenomena hosted by the heterostructures, including the polarization-controlled metal-insulator transition and magnetic anisotropy, negative capacitance effect, domain-imposed one-dimensional graphene superlattices, programmable second harmonic generation, and interface-enhanced polar alignment and piezoelectric response, as well as their applications in nonvolatile memory, logic, and reconfigurable optical devices. Possible future research directions are also outlined, encompassing the synthesis via remote epitaxy and oxide moiré engineering, incorporation of binary ferroelectric oxides, realization of topological properties, and functional design of oxygen octahedral rotation.

Z2topological phase transition in twisted plumbene

Since the discovery of superconductivity in twisted bilayer graphene, which initiated the field of twistronics, Moiré patterns caused by different twisting angles between stacked layers of van der Waals 2D materials show unique properties in these structures. In the present study, we examine the band structures at various rotation angles within the density functional theory framework to analyze the dependence of electronic and topological properties on the twisting angle in twisted bilayer plumbene structures. The results indicate the potential for a phase transition in the plumbene bilayer, where it can transition from a trivial insulator to a conductor. Furthermore, plumbene may exhibit characteristics of a topological insulator (TI) under specific angles. This research contains both TI and conductor structures. Our study suggests an intriguing possibility for changes in electronic and topological properties in this two-dimensional material, which can have potential applications in spintronic devices.

Weakly Dispersive Band in Synthetic Moiré Superlattice Inducing Optimal Compact Comb Generation

The moiré superlattices attract growing interest for holding exotic physics due to their fascinating properties from electronics to photonics. Much attention has been focused on the localization effect for waves in the flat band regime or the delocalization effect from the strongly dispersive band feature. Here, we study the weakly dispersive band in between the two above scenarios in a one-dimensional synthetic frequency moiré superlattice and observe the wave packet distributions therein toward novel frequency comb generation. Mode spacing in the spectral wave packet is reduced compared to the free spectral range of individual rings due to the mode couplings from the unequal sublattice periods of the synthetic moiré lattice. We unveil that the optimal compact frequency comb generation occurs in the weakly dispersive regime holding simultaneously uniform power distribution and broad frequency spanning in our experiment, benefiting from the interplay between the band flatness and power uniformity of mode distribution. Our results study the fundamental physics of the weakly dispersive moiré band in the synthetic frequency dimension and also show a new way for the future compact frequency comb generation in on-chip devices with small footprint size.

Controllable synthesis of environmentally stable vdW antiferromagnetic oxyhalide CrOCl

Layered antiferromagnetic oxyhalides with high environmental stability have recently attracted significant interest owing to their applications in spintronics and quantum devices. These materials can sustain a host of interesting phenomena that arise from magnetic phase transitions associated with structural changes. Although bulk crystal synthesis for some members of this oxyhalide family has been previously reported, bottom-up approaches for scalable growth remain limited. In this work, we demonstrated the controllable synthesis of CrOCl on different substrates through an atmospheric pressure chemical vapor deposition (APCVD) technique using CrCl3 and KMnO4 precursors. Our results demonstrate the successful gas-phase reaction and subsequent nucleation followed by island growth on different target substrates. Comprehensive structural and optical characterization reveals that the effect of temperature, growth time, and carrier gas flow rates ultimately dictate the overall phase and morphology of the crystal. Overall, our findings enhance the understanding of the bottom-up growth mechanisms for synthesizing layered oxyhalides and further expand the library of stable magnetic oxides.

General Method to Construct Flat Bands in Two-Dimensional Lattices

Searching for new materials hosting flat bands is pivotal for exploring strongly correlated effects and designing sensitive quantum devices, but remains challenging. We present a general method for realizing flat bands based on mathematical optimization and symmetry analysis. The method enables the discovery of ∼1000 types of two-dimensional lattices that can host flat bands, in sharp contrast with ∼10 flat-band lattices predicted previously besides the well-known ones. We further verify the method using first-principles calculations. Our approach provides new insights for the design of flat-band lattices, particularly when aiming to create experimentally feasible configurations.

Exploring Moiré Superlattices and Memristive Switching in Non-van der Waals Twisted Bilayer Bi2O2Se

The discovery of moiré physics in two-dimensional (2D) materials has opened new avenues for exploring unique physical and chemical properties induced by intralayer/interlayer interactions. This study reports the experimental observation of moiré patterns in 2D bismuth oxyselenide (Bi2O2Se) nanosheets grown through one-pot chemical reaction methods and a sonication-assisted layer separations technique. Our findings demonstrate that these moiré patterns result from the angular stacking of the nanosheets at various twist angles, leading to the formation of moiré superlattices (MSLs) with distinct periodicities. The presence of these superlattices was confirmed using transmission electron microscopy (TEM) images. The observation of moiré patterns in 2D Bi2O2Se nanosheets highlights the potential of tuning the band structures of the non-van der Waals material and thus unlocking new material properties through precise control of intralayer/interlayer interactions. Furthermore, the stacked 2D Bi2O2Se nanosheets show interesting memristive switching characteristics, presenting a promising candidate for artificial synapses and neuromorphic computing. Traditional memristors typically utilize a vertical metal-insulator-metal (MIM) structure, which relies on the formation of conductive filaments for resistive switching (RS). This configuration, however, often results in abrupt switching during various cycles and significant variation from device to device. Herein, defective BOSe moiré material exhibits a nonfilamentary RS switching characteristic in a two-terminal lateral device configuration. This design reveals an RS mechanism driven by the modulation of the Schottky barrier height (SBH) due to the movement of Se vacancies (VSe) under an external electric field. The fabricated device exhibits excellent RS behavior, achieving an RS ratio of ∼20 with a high degree of control and consistency across multiple cycles and from device to device. Interestingly, the device shows a stable negative differential resistance effect in the high-voltage region due to the carrier trapping process. Finally, we studied the stability of the MSL in BOSe through TEM imaging and electrical characterization on different device configurations to evaluate the repeatability of the switching characteristics.

Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe2

Tunable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunneling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe2. We find that atomic impurities that locally shift the Fermi level (EF) into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at EF. Our findings shed new light on earlier photoemission spectroscopy and theoretical studies of bulk 1T-ZrSe2 and provide local insight into the electron-doping-mediated CDW transition observed in semiconducting TMDs.

Two-Dimensional Materials for Brain-Inspired Computing Hardware

Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security to healthcare. However, the current strategy of implementing artificial intelligence algorithms using conventional silicon hardware is leading to unsustainable energy consumption. Neuromorphic hardware based on electronic devices mimicking biological systems is emerging as a low-energy alternative, although further progress requires materials that can mimic biological function while maintaining scalability and speed. As a result of their diverse unique properties, atomically thin two-dimensional (2D) materials are promising building blocks for next-generation electronics including nonvolatile memory, in-memory and neuromorphic computing, and flexible edge-computing systems. Furthermore, 2D materials achieve biorealistic synaptic and neuronal responses that extend beyond conventional logic and memory systems. Here, we provide a comprehensive review of the growth, fabrication, and integration of 2D materials and van der Waals heterojunctions for neuromorphic electronic and optoelectronic devices, circuits, and systems. For each case, the relationship between physical properties and device responses is emphasized followed by a critical comparison of technologies for different applications. We conclude with a forward-looking perspective on the key remaining challenges and opportunities for neuromorphic applications that leverage the fundamental properties of 2D materials and heterojunctions.

Bending Moiré in Twisted Bilayer Graphene

Moiré potentials caused by lattice mismatches significantly alter electrons in two-dimensional materials, inspiring the discovery of numerous unique physical properties. While strain modulates the structure and symmetry of the moiré potential, serving as a tuning mechanism for interactions, the impact of out-of-plane deformation, e.g., bending, on the moiré superlattice remains unknown. Here, we performed large-scale molecular dynamics simulations to study the evolution of the moiré superlattice of twisted bilayer graphene under out-of-plane bending deformation. Our findings indicated that curvature-dependent bending caused both global and local lattice structure modifications in the moiré superlattice. We revealed a linear relationship between lattice displacement and bending curvature across varying initial twist angles along with precise regulation of local interlayer rotation. Additionally, the atomic potential energy landscape revealed that the localized atomic stacks underwent a whirlpool-like transformation, becoming a relaxed superlattice. This work opens up new opportunities for tailoring moiré superlattices by using out-of-plane bending engineering.

3D Crystal Construction by Single-Crystal 2D Material Supercell Multiplying

2D stacking presents a promising avenue for creating periodic superstructures that unveil novel physical phenomena. While extensive research has focused on lateral 2D material superstructures formed through composition modulation and twisted moiré structures, the exploration of vertical periodicity in 2D material superstructures remains limited. Although weak van der Waals interfaces enable layer-by-layer vertical stacking, traditional methods struggle to control in-plane crystal orientation over large areas, and the vertical dimension is constrained by unscalable, low-throughput processes, preventing the achievement of global order structures. In this study, a supercell multiplying approach is introduced that enables high-throughput construction of 3D superstructures on a macroscopic scale, utilizing artificially stacked single-crystalline 2D multilayers as foundational repeating units. By employing wafer-scale single-crystalline 2D materials and referencing the crystal orientation of substrates, the method ensures precise alignment of crystal orientation within and across each supercell, thereby achieving controllable periodicity along all three axes. A centimeter-scale 3R-MoS₂ crystal is successfully constructed, comprising over 200 monolayers of single-crystalline MoS₂, through a bottom-up stacking process. Additionally, the approach accommodates the integration of amorphous oxide, enabling the assembly of 3D non-linear optical crystals with quasi-phase matching. This method paves the way for the bottom-up construction of macroscopic artificial 3D crystals with atomic plane precision, enabling tailored optical, electrical, and thermal properties and advancing the development of novel artificial materials and high-performance applications.

Topological Moiré Polaritons

The combination of an in-plane honeycomb potential and of a photonic spin-orbit coupling (SOC) emulates a photonic or polaritonic analog of bilayer graphene. We show that modulating the SOC magnitude allows us to change the overall lattice periodicity, emulating any type of moiré-arranged bilayer graphene with unique all-optical access to the moiré band topology. We show that breaking the time-reversal symmetry by an effective exciton-polariton Zeeman splitting opens a large topological gap in the array of moiré flat bands. This gap contains one-way topological edge states whose constant group velocity makes an increasingly sharp contrast with the flattening moiré bands.

Moiré Superlattice in Two-Dimensional Materials: Fundamentals, Applications, and Recent Developments

Moiré superlattices, arising from the periodic Moiré patterns formed by two-dimensional (2D) materials stacked with a slight lattice mismatch, have attracted significant attention due to their unique electronic and optical performances. This review provides an overview of recent advances in Moiré superlattices, highlighting their formation mechanisms, structural characteristics, and emergent phenomena. First, we discuss the theoretical basis and experimental techniques employed in fabricating Moiré superlattices. Then we outline various characterization methods that enable the investigation of the structural and electronic performance of Moiré superlattices at the atomic scale. Afterward, we review the diverse range of emergent phenomena exhibited in Moiré superlattices. These phenomena include the appearance of electronic band engineering, unconventional superconductivity, and topologically nontrivial state. We explore how these phenomena arise from the interplay between the original electronic properties of the constituent materials and the Moiré pattern-induced modifications. Furthermore, we examine the potential applications of Moiré superlattices in fields such as electronics, optoelectronics, and quantum technologies. Finally, we summarize the challenges and directions in Moiré superlattice research, which include exploring more complex Moiré patterns, understanding the role of twist angle and strain engineering, and developing theoretical frameworks to describe the behaviors of Moiré systems. This review aims to provide a comprehensive understanding of the recent progress in Moiré superlattices, shedding light on their formation, performance, and potential applications. The insights gained from this research are expected to pave the way for the design and development of next-generation functional Moiré superlattices.

Voltage-Gated Switching of Moiré Patterns in Epitaxial Molecular Crystals

Studying molecular materials at the nanoscale allows us to gain a deeper understanding of supramolecular structure formation and serves as the basis for rationally controlling the resulting interfacial properties. Here, we describe the formation of extended Moiré patterns resulting from the assembly of dipolar π-conjugated molecules on highly oriented pyrolytic graphite at the liquid-solid interface as characterized by scanning tunneling microscopy (STM). By switching the bias of the sample and thus the orientation of the external electric field in the vicinity of the STM junction, structural reorganization of the molecular building blocks and the resulting organic 2D crystal is induced and can conveniently be monitored in situ by the appearance and disappearance of the Moiré patterns. Importantly, the formation and loss of the Moiré patterns are fully reversible, providing exquisite control over epitaxial molecular crystals. Our approach provides fundamental insights into the supramolecular organization and resulting superstructure formation of incommensurable 2D lattices upon applying an electric field and enables the rational tuning of Moiré patterns as a key step toward the potential integration of organic 2D crystals in molecular nanodevices.

Microscopic Origin of Twist-Dependent Electron Transfer Rate in Bilayer Graphene

Using molecular simulation and continuum dielectric theory, we consider how electrochemical kinetics are modulated by the twist angle in bilayer graphene electrodes. By establishing a connection between the twist angle and the screening length of charge carriers within the electrode, we investigate how tunable metallicity modifies the statistics of the electron transfer energy gap. Constant potential molecular simulations show that the activation free energy for electron transfer increases with screening length, leading to a non-monotonic dependence on the twist angle. The twist angle alters the density of states, tuning the number of thermally accessible channels for electron transfer and the reorganization energy by affecting the stability of the vertically excited state through attenuated image charge interactions. Understanding these effects allows us to express the Marcus rate of interfacial electron transfer as a function of the twist angle in a manner consistent with experimental observations.

Accurate Layer-Number Determination of Hexagonal Boron Nitride Using Optical Characterization

Precise determination of the layer number (N) of hexagonal boron nitride (hBN) is crucial for its integration with other layered materials in applications such as ferroelectric devices and moiré potential modulation. We present a nondestructive method to accurately identify N, combining optical contrast analysis with second harmonic generation (SHG) measurements. By studying the flakes on 90 nm thick SiO2/Si substrates, we demonstrate that red-filtered optical images provide a clear contrast step in N with an uncertainty of ±1 layer, while SHG measurements further reduce the error by distinguishing even and odd layers. We also introduce a real-time detection technique to identify monolayer and few-layer hBN, improving flake identification efficiency. Given the growing interest in twisted hBN interfaces and their integration in van der Waals heterostructures, this method offers a practical approach for future studies.

Coulomb Drag in Graphene/h-BN/Graphene Moiré Heterostructures

We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (h-BN) moiré heterostructure with a moiré wavelength of ∼14  nm and an intrinsic graphene with a lattice constant of ∼0.25  nm. By tuning carrier densities of each graphene layer independently, we find that charge carriers in moiré minibands, i.e., near satellite Dirac point (sDP), can be coupled with massless Fermions near the original Dirac point (oDP), strongly enough to generate a finite drag resistivity. At high temperature (T) and large density (n), the drag resistivities near both oDP and sDP follow a typical n^{-α} (α=1.3-1.7) and T^{2} power law dependence as expected for the momentum transfer process and it also satisfies the layer reciprocity. In contrast, at low T, the layer reciprocity is broken in both oDP-oDP and sDP-oDP coupled regions that suggest dominant energy drag. Furthermore, quantitatively, the drag resistivities near sDPs are smaller than those near oDP and they deviate from T^{2} dependence below ∼100  K. Our work demonstrates that the drag experiment can be used to investigate the coupling between the carriers in moiré minibands and those in original Dirac bands which can be extended to other moiré materials.

Intertwined Flexoelectricity and Stacking Ferroelectricity in Marginally Twisted hBN Moiré Superlattice

Moiré superlattices in twisted van der Waals homo/heterostructures present a fascinating interplay between electronic and atomic structures, with potential applications in electronic and optoelectronic devices. Flexoelectricity, an electromechanical coupling between electric polarization and strain gradient, is intrinsic to these superlattices because of the lattice misfit strain at the atomic scale. However, due to its weak magnitude, the effect of flexoelectricity on moiré ferroelectricity has remained underexplored. Here, the role of flexoelectricity in shaping and modulating the moiré ferroelectric patterns in twisted hBN homojunction is unveiled. Enhanced flexoelectric effects induce unique stacking ferroelectric domains with hollow triangular structures. Interlayer bubbles influence domain shape and periodicity through local electric field modulation, and tip-stress enables the reversible manipulation of domain area and polarization direction. These findings highlight the impact of flexoelectric effects on moiré ferroelectricity, offering a new tuning knob for its manipulation.

Topological Polar Networks in Twisted Rhombohedral-Stacked Bilayer WSe2 Moiré Superlattices

Sliding ferroelectricity enables materials with intrinsic centrosymmetric symmetry to generate spontaneous polarization via stacking engineering, extending the family of ferroelectric materials and enriching the field of low-dimensional ferroelectric physics. Vertical ferroelectric domains, where the polarization is perpendicular to atomic motion, have been discovered in twisted bilayers of inversion symmetry broken systems such as hexagonal boron nitride, graphene, and transition metal chalcogenides. In this study, we demonstrate that this symmetry breaking also induces lateral polar networks in twisted bilayer rhombohedral-stacked WSe2, as determined through symmetry considerations and vector piezoresponse force microscopy (V-PFM) results. Lateral polarization (LP) in saddle point (SP) regions forms head-to-tail triangular vortices, exhibiting elliptical domain shapes with widths up to 40 nm. The LP encloses the vertical polarization (VP), forming a network of Bloch-type merons and antimerons. Our work enhances the understanding of domain distribution and polarization orientation in moiré ferroelectrics.

Moiré-engineered light-matter interactions in MoS2/WSe2 heterobilayers at room temperature

Moiré superlattices in van der Waals heterostructures represent a highly tunable quantum system, attracting substantial interest in both many-body physics and device applications. However, the influence of the moiré potential on light-matter interactions at room temperature has remained largely unexplored. In our study, we demonstrate that the moiré potential in MoS2/WSe2 heterobilayers facilitates the localization of interlayer exciton (IX) at room temperature. By performing reflection contrast spectroscopy, we demonstrate the importance of atomic reconstruction in modifying intralayer excitons, supported by the atomic force microscopy experiment. When decreasing the twist angle, we observe that the IX lifetime becomes longer and light emission gets enhanced, indicating that non-radiative decay channels such as defects are suppressed by the moiré potential. Moreover, through the integration of moiré superlattices with silicon single-mode cavities, we find that the devices employing moiré-trapped IXs exhibit a significantly lower threshold, one order of magnitude smaller compared to the device utilizing delocalized IXs. These findings not only encourage the exploration of many-body physics in moiré superlattices at elevated temperatures but also pave the way for leveraging these artificial quantum materials in photonic and optoelectronic applications.

Understanding disorder in monolayer graphene devices with gate-defined superlattices

Engineering superlattices (SLs)-which are spatially periodic potential landscapes for electrons-is an emerging approach for the realization of exotic properties, including superconductivity and correlated insulators, in two-dimensional materials. While moiré SL engineering has been a popular approach, nanopatterning is an attractive alternative offering control over the pattern and wavelength of the SL. However, the disorder arising in the system due to imperfect nanopatterning is seldom studied. Here, by creating a square lattice of nanoholes in the SiO2dielectric layer using nanolithography, we study the SL potential and the disorder formed in hBN-graphene-hBN heterostructures. Specifically, we observe that while electrical transport shows distinct SL satellite peaks, the disorder of the device is significantly higher than graphene devices without any SL. We use finite-element simulations combined with a resistor network model to calculate the effects of this disorder on the transport properties of graphene. We consider three types of disorder: nanohole size variations, adjacent nanohole mergers, and nanohole vacancies. Comparing our experimental results with the model, we find that the disorder primarily originates from nanohole size variations rather than nanohole mergers in square SLs. We further confirm the validity of our model by comparing the results with quantum transport simulations. Our findings highlight the applicability of our simple framework to predict and engineer disorder in patterned SLs, specifically correlating variations in the resultant SL patterns to the observed disorder. Our combined experimental and theoretical results could serve as a valuable guide for optimizing nanofabrication processes to engineer disorder in nanopatterned SLs.

Polytelluride square planar chain-induced anharmonicity results in ultralow thermal conductivity and high thermoelectric efficiency in Al2Te5 monolayers

Two-dimensional (2D) metal chalcogenides provide rich ground for the development of nanoscale thermoelectrics, although achieving optimal thermoelectric efficiency is still a challenge. Here, we leverage the unique chemistry of tellurium (Te), renowned for its hypervalent bonding and catenation abilities, to tackle this challenge as manifested in Al2Te3 and Al2Te5 monolayers. While the former forms a straightforward covalent Al-Te network, the latter adopts a more intricate bonding mechanism, enabled by eccentric features of Te chemistry, to maintain charge balance. In Al2Te5, a square planar chain (SPC) known as polytelluride [Te3]2- is neutralized by the covalently bonded [Al2Te2]2+ framework. The hypervalent nature of Te results in bizarre Born effective charges of 7 and -4 for adjacent Te atoms within the square planar chain, a feature that induces significant anharmonicity in Al2Te5 monolayers. Enhanced anharmonic lattice vibrations and the accordion pattern bestow glass-like, strongly anisotropic thermal conductivity to the Al2Te5 monolayer. The calculated κL values of 1.8 and 0.5 W m-1 K-1 along the a- and b-axes at 600 K are one order of magnitude lower than those of Al2Te3, and even lower than monolayers that contain heavy cations like Bi2Te3. Moreover, the tellurium chain dominates the valence band maximum and conduction band minimum of Al2Te5, leading to a high valley degeneracy of 10, and thus a high power factor and figure of merit (zT). Using rigorous first-principles calculations of electron relaxation time, the estimated hole-doped and electron-doped zT of, respectively, 1.5 and 0.5 at 600 K is achieved for Al2Te5. The pioneering zT of Al2Te5 compared to that of Al2Te3 is rooted merely in its amorphous-like lattice thermal transport and its polytelluride chain. These findings underscore the importance of aluminum telluride and polymeric-based inorganic compounds as practical and cost-effective thermoelectric materials, pending further experimental validation.

Theory of Moiré Magnetism and Multidomain Spin Textures in Twisted Mott Insulator-Semimetal Heterobilayers

Motivated by the recent experimental developments in van der Waals heterostructures, we investigate the emergent magnetism in Mott insulator-semimetal moiré superlattices by deriving effective spin models and exploring their phase diagram by Monte Carlo simulations. Our analysis indicates that the stacking-dependent interlayer Kondo interaction can give rise to different types of magnetic order, forming domains within the moiré unit cell. In particular, we find that the AB (AA) stacking regions tend to order (anti)ferromagnetically for an extended range of parameters. The remaining parts of the moiré unit cell form ferromagnetic chains that are coupled antiferromagnetically. We show that the decay length of the Kondo interaction can control the extent of these phases. Our results highlight the importance of stacking-dependent interlayer exchange and the rich magnetic spin textures that can be obtained in van der Waals heterostructures.

Macroscopic tunneling probe of Moiré spin textures in twisted CrI3

Various noncollinear spin textures and magnetic phases have been predicted in twisted two-dimensional CrI3 due to competing ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange from moiré stacking-with potential spintronic applications even when the underlying material possesses a negligible Dzyaloshinskii-Moriya or dipole-dipole interaction. Recent measurements have shown evidence of coexisting FM and AFM layer order in small-twist-angle CrI3 bilayers and double bilayers. Yet, the nature of the magnetic textures remains unresolved and possibilities for their manipulation and electrical readout are unexplored. Here, we use tunneling magnetoresistance to investigate the collective spin states of twisted double-bilayer CrI3 under both out-of-plane and in-plane magnetic fields together with detailed micromagnetic simulations of domain dynamics based on magnetic circular dichroism. Our results capture hysteretic and anisotropic field evolutions of the magnetic states and we further uncover two distinct non-volatile spin textures (out-of-plane and in-plane domains) at ≈1° twist angle, with a different global tunneling resistance that can be switched by magnetic field.

Integration of conventional surface science techniques with surface-sensitive azimuthal and polarization dependent femtosecond-resolved sum frequency generation spectroscopy

Experimental insight into the elementary processes underlying charge transfer across interfaces has blossomed with the wide-spread availability of ultra-high vacuum (UHV) setups that allow the preparation and characterization of solid surfaces with well-defined molecular adsorbates over a wide range of temperatures. Within the last 15 years, such insights have extended to charge transfer heterostructures containing solids overlain by one or more atomically thin two dimensional materials. Such systems are of wide potential interest both because they appear to offer a path to separate surface reactivity from bulk chemical properties and because some offer completely novel physics, unrealizable in bulk three dimensional solids. Thick layers of molecular adsorbates or heterostructures of 2D materials generally preclude the use of electrons or atoms as probes. However, with linear photon-in/photon-out techniques, it is often challenging to assign the observed optical response to a particular portion of the interface. We and prior workers have demonstrated that by full characterization of the symmetry of the second order nonlinear optical susceptibility, i.e., the χ(2), in sum frequency generation (SFG) spectroscopy, this problem can be overcome. Here, we describe an UHV system built to allow conventional UHV sample preparation and characterization, femtosecond and polarization resolved SFG spectroscopy, the azimuthal sample rotation necessary to fully describe χ(2) symmetry, and sufficient stability to allow scanning SFG microscopy. We demonstrate these capabilities in proof-of-principle measurements on CO adsorbed on Pt(111) and on the clean Ag(111) surface. Because this setup allows both full characterization of the nonlinear susceptibility and the temperature control and sample preparation/characterization of conventional UHV setups, we expect it to be of great utility in the investigation of both the basic physics and applications of solid, 2D material heterostructures.

Recombination dynamics and manybody effect of excitons in large-area monolayer MoS2capped with (111) NiO epitaxial layer

CVD grown monolayer MoS2films on c-sapphire substrates are vacuum annealed and capped with (111) NiO epitaxial films using pulsed laser deposition technique. Time, energy and polarization resolved optical techniques are used to understand the effect of capping on the excitonic properties of the monolayer MoS2. It has been observed that trion contribution in the photoluminescence (PL) spectra increases after the capping, suggesting an enhancement of electron concentration in the conduction band. This has been attributed to the capping driven reduction of physisorbed air molecules from the sulphur vacancy (VS) sites. Note that the air molecules act as passivating agents for theVS-donors. Low temperature polarization resolved PL spectroscopy and ultrafast pump and probe transient absorption spectroscopy (TAS) show an increase of the biexcitonic population in the system after the encapsulation. The TAS study further reveals longer lifetime for both A and B excitons in capped samples implying a reduction of non-radiative recombination rate of the excitons after the capping. It has also been observed that in the capped samples,K/K'valleys are populated with trions under sufficiently high pump powers. This has been attributed to the lower non-radiative recombination rates of the high energy photoexcited carriers and the faster transfer of either electrons or holes from the high energy pockets to theK/K'valleys. The study further reveals different many-body effects in excitons and trions.

High-Mobility Compensated Semimetals, Orbital Magnetization, and Umklapp Scattering in Bilayer Graphene Moiré Superlattices

Twist-controlled moiré superlattices (MSs) have emerged as a versatile platform for realizing artificial systems with complex electronic spectra. The combination of Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) can give rise to an interesting MS, which has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and the electronic ratchet effect. Yet, the understanding of the electronic properties of BLG/hBN MS has, at present, remained fairly limited. Here, we combine magneto-transport and low-energy sub-THz excitation to gain insights into the properties of this MS. We demonstrate that the alignment between BLG and hBN crystal lattices results in the emergence of compensated semimetals at some integer fillings of the moiré bands, separated by van Hove singularities where the Lifshitz transition occurs. A particularly pronounced semimetal develops when eight holes reside in the moiré unit cell, where coexisting high-mobility electron and hole systems feature strong magnetoresistance reaching 2350% already at B = 0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, indicating an orbital magnetization characterized by a strongly enhanced effective gv-factor of 340. Finally, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multifaceted analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in van der Waals materials and provides a comprehensive understanding of the BLG/hBN MS.

Toward Clean 2D Materials and Devices: Recent Progress in Transfer and Cleaning Methods

Two-dimensional (2D) materials have tremendous potential to revolutionize the field of electronics and photonics. Unlocking such potential, however, is hampered by the presence of contaminants that usually impede the performance of 2D materials in devices. This perspective provides an overview of recent efforts to develop clean 2D materials and devices. It begins by discussing conventional and recently developed wet and dry transfer techniques and their effectiveness in maintaining material "cleanliness". Multi-scale methodologies for assessing the cleanliness of 2D material surfaces and interfaces are then reviewed. Finally, recent advances in passive and active cleaning strategies are presented, including the unique self-cleaning mechanism, thermal annealing, and mechanical treatment that rely on self-cleaning in essence. The crucial role of interface wetting in these methods is emphasized, and it is hoped that this understanding can inspire further extension and innovation of efficient transfer and cleaning of 2D materials for practical applications.

In-plane anisotropic two-dimensional materials for twistronics

In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.

Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics

In the landscape of continuous downscaling metal-oxide-semiconductor field-effect transistors, two-dimensional (2D) semiconductors with atomic thinness emerge as promising channel materials for ultimate scaled devices. However, integrating compatible dielectrics with 2D semiconductors, particularly in a scalable way, remains a critical challenge that hinders the development of 2D devices. Recently, 2D inorganic molecular crystals (IMCs), which are free of dangling bonds and possess excellent dielectric properties and simplicity for scalable fabrication, have emerged as alternatives for gate dielectric integration in 2D devices. In this Perspective, we start with the introduction of structure and synthesis methods of IMCs and then discuss the explorations of using IMCs as the dielectrics, as well as some remaining relevant issues to be unraveled. Moreover, we look at the future opportunities of IMC dielectrics in 2D devices both for practical applications and fundamental research.

Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications

Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.

Transport Anisotropy in One-Dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit

One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP) potential is promising for achieving the electron-lensing effect, while previous studies utilizing the modulated dielectric gates can only yield a moderate, spatially dispersed potential profile. Here, we realize high KP potential modulation of graphene via nanoscale ferroelectric domain gating. Graphene transistors are fabricated on PbZr_{0.2}Ti_{0.8}O_{3} back gates patterned with periodic, 100-200 nm wide stripe domains. Because of band reconstruction, the h-BN top gating induces satellite Dirac points in samples with current along the superlattice vector s[over ^], a feature absent in samples with current perpendicular to s[over ^]. The satellite Dirac point position scales with the superlattice period (L) as ∝L^{β}, with β=-1.18±0.06. These results can be well explained by the high KP potential scenario, with the Fermi velocity perpendicular to s[over ^] quenched to about 1% of that for pristine graphene. Our study presents a promising material platform for realizing electron supercollimation and investigating flat band phenomena.

Exfoliable Transition Metal Chalcogenide Semiconductor NbSe2I2

As the field of exfoliated van der Waals electronics grows to include complex heterostructures, the variety of available in-plane symmetries and geometries becomes increasingly valuable. In this work, we present an efficient chemical vapor transport synthesis of NbSe2I2 with the triclinic space group P1̅. This material contains Nb-Nb dimers and an in-plane crystallographic angle γ = 61.3°. We show that NbSe2I2 can be exfoliated down to few-layer and monolayer structures and use Raman spectroscopy to test the preservation of the crystal structure of exfoliated thin films. The crystal structure was verified by single-crystal and powder X-ray diffraction methods. Density functional theory calculations show triclinic NbSe2I2 to be a semiconductor with a band gap of around 1 eV, with similar band structure features for bulk and monolayer crystals. The physical properties of NbSe2I2 have been characterized by transport, thermal, optical, and magnetic measurements, demonstrating triclinic NbSe2I2 to be a diamagnetic semiconductor that does not exhibit any phase transformation below room temperature.

Ultrafast optical properties and applications of anisotropic 2D materials

Two-dimensional (2D) layered materials exhibit strong light-matter interactions, remarkable excitonic effects, and ultrafast optical response, making them promising for high-speed on-chip nanophotonics. Recently, significant attention has been directed towards anisotropic 2D materials (A2DMs) with low in-plane crystal symmetry. These materials present unique optical properties dependent on polarization and direction, offering additional degrees of freedom absent in conventional isotropic 2D materials. In this review, we discuss recent progress in understanding the fundamental aspects and ultrafast nanophotonic applications of A2DMs. We cover structural characteristics and anisotropic linear/nonlinear optical properties of A2DMs, including well-studied black phosphorus and rhenium dichalcogenides, as well as emerging quasi-one-dimensional materials. Then, we discuss fundamental ultrafast anisotropic phenomena occurring in A2DMs, such as polarization-dependent ultrafast dynamics of charge carriers and excitons, their direction-dependent spatiotemporal diffusion, photo-induced symmetry switching, and anisotropic coherent acoustic phonons. Furthermore, we review state-of-the-art ultrafast nanophotonic applications based on A2DMs, including polarization-driven active all-optical modulations and ultrafast pulse generations. This review concludes by offering perspectives on the challenges and future prospects of A2DMs in ultrafast nanophotonics.

Filtering Robust Graphite without Incommensurate Interfaces by Electrical Technique

Two-dimensional (2D) van der Waals (vdW) layered materials have attracted considerable attention due to their potential applications in various fields. Among these materials, graphite is widely employed to achieve structural superlubricity (SSL), where the interfacial friction between two solids is almost negligible and the wear is zero. However, the development of integrated SSL systems using graphite flakes still faces a major obstacle stemming from the inherent delamination-induced instability in vdW layered materials. To address this issue, we propose a nondestructive filtering technique that utilizes electrical measurement to identify robust graphite flakes without delamination. Our experimental results confirm that all the filtered graphite flakes exhibit delamination-free behavior after more than 7000 cycles of sliding on a series of 2D and 3D substrates. Besides, we employ three types of characterizing methods to confirm that the filtering process does not impair the graphite flakes. Moreover, with focused ion beam (FIB) assisted slicing characterization and statistical analysis, we have discovered that all of the filtered flakes possess a graphite layer thickness below 100 nm. This is consistent with the thickness of the single crystalline graphite layer of our samples reported in the literature, suggesting the absence of incommensurate interfaces in the filtered graphite flakes. Our work contributes to a deeper understanding of the relationship between graphite conductance and incommensurate interfaces. In addition, we present a possible solution to address the delamination problem in layered materials, and this technique shows the potential to characterize the internal microstructure of grains and the distribution of grain boundaries in vdW materials on a large scale.

Analysis of Strain and Defects in Tellurium-WSe2 Moiré Heterostructures Using Scanning Nanodiffraction

In recent years, there has been an increasing focus on 2D nongraphene materials that range from insulators to semiconductors to metals. As a single-elemental van der Waals semiconductor, tellurium (Te) has captivating anisotropic physical properties. Recent work demonstrated growth of ultrathin Te on WSe2 with the atomic chains of Te aligned with the armchair directions of the substrate using physical vapor deposition (PVD). In this system, a moiré superlattice is formed where micrometer-scale Te flakes sit on top of the continuous WSe2 film. Here, we determined the precise orientation of the Te flakes with respect to the substrate and detailed structure of the resulting moiré lattice by combining electron microscopy with image simulations. We directly visualized the moiré lattice using center of mass-differential phase contrast (CoM-DPC). We also investigated the local strain within the Te/WSe2 layered materials using scanning nanodiffraction techniques. There is a significant tensile strain at the edges of flakes along the direction perpendicular to the Te chain direction, which is an indication of the preferred orientation for the growth of Te on WSe2. In addition, we observed local strain relaxation regions within the Te film, specifically attributed to misfit dislocations, which we characterize as having a screw-like nature. The detailed structural analysis gives insight into the growth mechanisms and strain relaxation in this moiré heterostructure.

Enhanced Homogeneity of Moiré Superlattices in Double-Bilayer WSe2 Homostructure

Moiré superlattices have emerged as a promising platform for investigating and designing optically generated excitonic properties. The electronic band structure of these systems can be qualitatively modulated by interactions between the top and bottom layers, leading to the emergence of new quantum phenomena. However, the inhomogeneities present in atomically thin bilayer moiré superlattices created by artificial stacking have hindered a deeper understanding of strongly correlated electron properties. In this work, we report the fabrication of homogeneous moiré superlattices with controllable twist angles using a 2L-WSe2/2L-WSe2 homostructure. By adding extra layers, we provide additional degrees of freedom to tune the optical properties of the moiré superlattices while mitigating the nonuniformity problem. The presence of an additional bottom layer acts as a buffer, reducing the inhomogeneity of the moiré superlattice, while the encapsulation effect of the additional top and bottom WSe2 monolayers further enhances the localized moiré excitons. Our observations of alternating circularly polarized photoluminescence confirm the existence of moiré excitons, and their characteristics were further confirmed by theoretical calculations. These findings provide a fundamental basis for studying moiré potential correlated quantum phenomena and pave the way for their application in quantum optical devices.

Functionalizing nanophotonic structures with 2D van der Waals materials

The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.

Recent Advances in Moiré Superlattice Systems by Angle-Resolved Photoemission Spectroscopy

The last decade has witnessed a flourish in 2D materials including graphene and transition metal dichalcogenides (TMDs) as atomic-scale Legos. Artificial moiré superlattices via stacking 2D materials with a twist angle and/or a lattice mismatch have recently become a fertile playground exhibiting a plethora of emergent properties beyond their building blocks. These rich quantum phenomena stem from their nontrivial electronic structures that are effectively tuned by the moiré periodicity. Modern angle-resolved photoemission spectroscopy (ARPES) can directly visualize electronic structures with decent momentum, energy, and spatial resolution, thus can provide enlightening insights into fundamental physics in moiré superlattice systems and guides for designing novel devices. In this review, first, a brief introduction is given on advanced ARPES techniques and basic ideas of band structures in a moiré superlattice system. Then ARPES research results of various moiré superlattice systems are highlighted, including graphene on substrates with small lattice mismatches, twisted graphene/TMD moiré systems, and high-order moiré superlattice systems. Finally, it discusses important questions that remain open, challenges in current experimental investigations, and presents an outlook on this field of research.

Flattening conduction and valence bands for interlayer excitons in a moiré MoS2/WSe2 heterobilayer

We explore the flatness of conduction and valence bands of interlayer excitons in MoS2/WSe2 van der Waals heterobilayers, tuned by interlayer twist angle, pressure, and external electric field. We employ an efficient continuum model where the moiré pattern from lattice mismatch and/or twisting is represented by an equivalent mesoscopic periodic potential. We demonstrate that the mismatch moiré potential is too weak to produce significant flattening. Moreover, we draw attention to the fact that the quasi-particle effective masses around the Γ-point and the band flattening are reduced with twisting. As an alternative approach, we show (i) that reducing the interlayer distance by uniform vertical pressure can significantly increase the effective mass of the moiré hole, and (ii) that the moiré depth and its band flattening effects are strongly enhanced by accessible electric gating fields perpendicular to the heterobilayer, with resulting electron and hole effective masses increased by more than an order of magnitude - leading to record-flat bands. These findings impose boundaries on the commonly generalized benefits of moiré twistronics, while also revealing alternative feasible routes to achieve truly flat electron and hole bands to carry us to strongly correlated excitonic phenomena on demand.

Recent Advances in the Preparation and Application of Two-Dimensional Nanomaterials

Two-dimensional nanomaterials (2D NMs), consisting of atoms or a near-atomic thickness with infinite transverse dimensions, possess unique structures, excellent physical properties, and tunable surface chemistry. They exhibit significant potential for development in the fields of sensing, renewable energy, and catalysis. This paper presents a comprehensive overview of the latest research findings on the preparation and application of 2D NMs. First, the article introduces the common synthesis methods of 2D NMs from both "top-down" and "bottom-up" perspectives, including mechanical exfoliation, ultrasonic-assisted liquid-phase exfoliation, ion intercalation, chemical vapor deposition, and hydrothermal techniques. In terms of the applications of 2D NMs, this study focuses on their potential in gas sensing, lithium-ion batteries, photodetection, electromagnetic wave absorption, photocatalysis, and electrocatalysis. Additionally, based on existing research, the article looks forward to the future development trends and possible challenges of 2D NMs. The significance of this work lies in its systematic summary of the recent advancements in the preparation methods and applications of 2D NMs.

Mixing of moiré-surface and bulk states in graphite

Van der Waals assembly enables the design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lattice using moiré superlattices1-9. This twistronics approach has resulted in numerous previously undescribed physics, including strong correlations and superconductivity in twisted bilayer graphene10-12, resonant excitons, charge ordering and Wigner crystallization in transition-metal chalcogenide moiré structures13-18 and Hofstadter's butterfly spectra and Brown-Zak quantum oscillations in graphene superlattices19-22. Moreover, twistronics has been used to modify near-surface states at the interface between van der Waals crystals23,24. Here we show that electronic states in three-dimensional (3D) crystals such as graphite can be tuned by a superlattice potential occurring at the interface with another crystal-namely, crystallographically aligned hexagonal boron nitride. This alignment results in several Lifshitz transitions and Brown-Zak oscillations arising from near-surface states, whereas, in high magnetic fields, fractal states of Hofstadter's butterfly draw deep into the bulk of graphite. Our work shows a way in which 3D spectra can be controlled using the approach of 2D twistronics.

Dynamics of Moiré Trion and Its Valley Polarization in a Microfabricated WSe2/MoSe2 Heterobilayer

The moiré potential, induced by stacking two monolayer semiconductors with slightly different lattice mismatches, acts as periodic quantum confinement for optically generated excitons, resulting in spatially ordered zero-dimensional quantum systems. However, there are limitations to exploring intrinsic optical properties of moiré excitons due to ensemble emissions and broadened emissions from many peaks caused by the inhomogeneity of the moiré potential. In this study, we proposed a microfabrication technique based on focused Ga⁺ ion beams, which enables us to control the number of peaks originating from the moiré potential and thus explore unknown moiré optical characteristics of WSe₂/MoSe₂ heterobilayer. By taking advantage of this approach, we reveal emissions from a single moiré exciton and charged moiré exciton (trion) under electrostatic doping conditions. We show the momentum dark moiré trion state above the bright trion state with a splitting energy of approximately 4 meV and clarify that the dynamics are determined by the initial trion population in the bright state. Furthermore, the degree of negative circularly polarized emissions and their valley dynamics of moiré trions are dominated by a very long valley relaxation process lasting ∼700 ns. Our findings on microfabricated heterobilayer could be viewed as an extension of our groundbreaking efforts in the field of quantum optics application using moiré superlattices.

Layer-dependent correlated phases in WSe2/MoS2 moiré superlattice

Electron correlation plays an essential role in the macroscopic quantum phenomena in the moiré heterostructure, such as antiferromagnetism and correlated insulating phases. Unlike the phenomena where the interaction involves only electrons in one layer, the interaction of distinct phases in two or more layers represents a new horizon forward, such as the one in the Kondo lattice model. Here, using interlayer excitons as a probe, we show that the interlayer interactions in heterobilayers of tungsten diselenide and molybdenum disulfide (WSe₂/MoS₂) can be electrically switched on and off, resulting in a layer-dependent correlated phase diagram, including single-layer, layer-selective, excitonic-insulator and layer-hybridized regions. We demonstrate that these correlated phases affect the interlayer exciton non-radiative decay pathways. These results reveal the role of strong correlation on interlayer exciton dynamics and pave the way for studying the layer-resolved strong correlation behaviour in moiré heterostructures.

Synergistic effect of alloying on thermoelectric properties of two-dimensional PdPQ (Q = S, Se)

Hosts of 2D materials exist, yet few allow compositional and structural tailoring as the MQ₂ (M = Mo, W; Q = S, Se) family does, for which various structural superlattices have been synthesized. Using thorough first-principles calculations, we show how bonding hierarchy contributes to the structural resilience of 2D PdPQ and allows for full-range alloying of sulfur and selenium. Within the structural unit of Pd₂P₂Q₂, the covalently-bonded [P₂Q₂]^4- polyanions hold the structure together with their molecular-like P-P bonds while ionically bonded Pd-Qs allow the S/Se substitution. Here, the bonding hierarchy imparts superior electronic and structural features to the PdPQ monolayers. As such, the flat-and-dispersive valence band and the eight degenerate valleys of the conduction band benefit the p-type and n-type thermoelectricity of pristine PdPQ, which can be further enhanced by alloying. The high-entropy alloying synergistically suppresses the lattice heat transport from 75 to 30 W m^-1 K^-1 and increases the band degeneracy of PdPQ monolayers, resulting in an overall improvement in zT. Combining these features, in a naïve approach, results in a large zT approaching two for both p-type and n-type doping. However, accurate fully-fledged electron-phonon calculations rebut this promise, showing that at high temperatures, the increased electron scattering results in a stagnant power factor in the flat-and-dispersive valence band. Using a realistic first-principles scattering, we finally calculate the thermoelectric efficiency of PdPQ (Q = S, Se) and highlight the importance of an accurate estimation of electron relaxation time for thermoelectric predictions.

Moiré Enhanced Potentials in Twisted Transition Metal Dichalcogenide Trilayers Homostructures

The exploration of moiré superlatticesholds promising potential to uncover novel quantum phenomena emerging from the interplay of atomic structure and electronic correlation . However, the impact of the moiré potential modulation on the number of twisted layers has yet to be experimentally explored. Here, this work synthesizes a twisted WSe₂ homotrilayer using a dry-transfer method and investigates the enhancement of the moiré potential with increasing number of twisted layers. The results of the study reveal the presence of multiple exciton resonances with positive or negative circularly polarized emission in the WSe₂ homostructure with small twist angles, which are attributed to the excitonic ground and excited states confined to the moiré potential. The distinct g-factor observed in the magneto-optical spectroscopy is also shown to be a result of the confinement of the exciton in the moiré potential. The moiré potential depths of the twisted bilayer and trilayer homostructures are found to be 111 and 212 meV, respectively, an increase of 91% from the bilayer structure. These findings demonstrate that the depth of the moiré potential can be manipulated by adjusting the number of stacked layers, providing a promising avenue for exploration into highly correlated quantum phenomena.

A primer on twistronics: a massless Dirac fermion's journey to moiré patterns and flat bands in twisted bilayer graphene

The recent discovery of superconductivity in magic-angle twisted bilayer graphene (TBLG) has sparked a renewed interest in the strongly-correlated physics ofsp²carbons, in stark contrast to preliminary investigations which were dominated by the one-body physics of the massless Dirac fermions. We thus provide a self-contained, theoretical perspective of the journey of graphene from its single-particle physics-dominated regime to the strongly-correlated physics of the flat bands. Beginning from the origin of the Dirac points in condensed matter systems, we discuss the effect of the superlattice on the Fermi velocity and Van Hove singularities in graphene and how it leads naturally to investigations of the moiré pattern in van der Waals heterostructures exemplified by graphene-hexagonal boron-nitride and TBLG. Subsequently, we illuminate the origin of flat bands in TBLG at the magic angles by elaborating on a broad range of prominent theoretical works in a pedagogical way while linking them to available experimental support, where appropriate. We conclude by providing a list of topics in the study of the electronic properties of TBLG not covered by this review but may readily be approached with the help of this primer.

Epitaxial Atomic Substitution for MoS2-MoN Heterostructure Synthesis

Integrating different two-dimensional (2D) crystals is highly demanded for advancing their application in next-generation electronics. 2D transition metal carbides, nitrides, and carbonitrides (MXenes), as new members in the 2D family, are promising candidates for 2D electrodes because of their high conductivity and stability. However, integrating MXenes with other 2D semiconductors has been underdeveloped due to the limitation of top-down etching synthesis of MXenes. Our recent development of atomic substitution synthesis achieved ultrathin non-van der Waals (non-vdW) transition metal nitrides (TMNs) through the conversion of vdW transition metal dichalcogenides (TMDs), opening opportunities of combining TMDs with TMNs via controllable partial conversion. Here, we perform an in-depth study of the atomic substitution process from semiconducting MoS₂ to metallic MoN and realize both lateral and vertical MoN-MoS₂ heterostructures via edge and surface epitaxial conversion, respectively. The structural evolution investigation from MoS₂ to MoN using high-resolution transmission electron microscopy suggests atomically bonded interface for lateral heterostructures and moiré pattern in vertical heterostructures. Moreover, mask-assisted atomic substitution is applied to create patterned MoN-MoS₂-MoN lateral heterostructures. Electrical measurements reveal a Schottky barrier height of meV for a three-layer MoS₂-MoN interface, showcasing the potential of atomically bonded lateral heterostructures for MoS₂ electronics with MoN as contact electrodes.

Spin Coating Promotes the Epitaxial Growth of AgCN Microwires on 2D Materials

Epitaxial growth of inorganic crystals on 2D materials is expected to greatly advance nanodevices and nanocomposites. However, because pristine surfaces of 2D materials are chemically inert, it is difficult to grow inorganic crystals epitaxially on 2D materials. Previously, successful results were achieved only by vapor-phase deposition at high temperature, and solution-based deposition including spin coating made the epitaxial growth unaligned, sparse, or nonuniform on 2D materials. Here, we show that solvent-controlled spin coating can uniformly deposit a dense layer of epitaxial AgCN microwires onto various 2D materials. Adding ethanol to an aqueous AgCN solution facilitates uniform formation of the thin supersaturated solution layer during spin coating, which promotes heterogeneous crystal nucleation on 2D material surfaces over homogeneous nucleation in the bulk solution. Microscopic analysis confirms highly aligned, uniform, and dense growth of epitaxial AgCN microwires on graphene, MoS₂, hBN, WS₂, and WSe₂. The epitaxial microwires, which are optically observable and chemically removable, enable crystallographic mapping of grains in millimeter-sized polycrystalline graphene as well as precise control of twist angles (<∼1°) in van der Waals heterostructures. In addition to these practical applications, our study demonstrates the potential of 2D materials as epitaxial templates even in spin coating of inorganic crystals.

Light driven magnetic transitions in transition metal dichalcogenide heterobilayers

Motivated by the recent excitement around the physics of twisted transition metal dichalcogenide (TMD) multilayer systems, we study strongly correlated phases of TMD heterobilayers under the influence of light. We consider both waveguide light and circularly polarized light. The former allows for longitudinally polarized light, which in the high frequency limit can be used to selectively modify interlayer hoppings in a tight-binding model. We argue based on quasi-degenerate perturbation theory that changes to the interlayer hoppings can be captured as a modulation to the strength of the moiré potential in a continuum model. As a consequence, waveguide light can be used to drive transitions between a myriad of different magnetic phases, including a transition from a 120^∘Neel phase to a stripe ordered magnetic phase, or from a spin density wave phase to a paramagnetic phase, among others. When the system is subjected to circularly polarized light we find that the effective mass of the active TMD layer is modified by an applied electromagnetic field. By simultaneously applying waveguide light and circularly polarized light to a system, one has a high level of control in moving through the phase diagram in-situ. Lastly, we comment on the experimental feasibility of Floquet state preparation and argue that it is within reach of available techniques when the system is coupled to a judiciously chosen bath.