1
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Bugnet M, Löffler S, Ederer M, Kepaptsoglou DM, Ramasse QM. Current opinion on the prospect of mapping electronic orbitals in the transmission electron microscope: State of the art, challenges and perspectives. J Microsc 2024. [PMID: 38818951 DOI: 10.1111/jmi.13321] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Revised: 05/03/2024] [Accepted: 05/08/2024] [Indexed: 06/01/2024]
Abstract
The concept of electronic orbitals has enabled the understanding of a wide range of physical and chemical properties of solids through the definition of, for example, chemical bonding between atoms. In the transmission electron microscope, which is one of the most used and powerful analytical tools for high-spatial-resolution analysis of solids, the accessible quantity is the local distribution of electronic states. However, the interpretation of electronic state maps at atomic resolution in terms of electronic orbitals is far from obvious, not always possible, and often remains a major hurdle preventing a better understanding of the properties of the system of interest. In this review, the current state of the art of the experimental aspects for electronic state mapping and its interpretation as electronic orbitals is presented, considering approaches that rely on elastic and inelastic scattering, in real and reciprocal spaces. This work goes beyond resolving spectral variations between adjacent atomic columns, as it aims at providing deeper information about, for example, the spatial or momentum distributions of the states involved. The advantages and disadvantages of existing experimental approaches are discussed, while the challenges to overcome and future perspectives are explored in an effort to establish the current state of knowledge in this field. The aims of this review are also to foster the interest of the scientific community and to trigger a global effort to further enhance the current analytical capabilities of transmission electron microscopy for chemical bonding and electronic structure analysis.
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Affiliation(s)
- M Bugnet
- CNRS, INSA Lyon, Université Claude Bernard Lyon 1, MATEIS, UMR 5510, Villeurbanne, France
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury, UK
- School of Chemical and Process Engineering, University of Leeds, Leeds, UK
| | - S Löffler
- University Service Centre for Transmission Electron Microscopy, TU Wien, Wien, Austria
| | - M Ederer
- University Service Centre for Transmission Electron Microscopy, TU Wien, Wien, Austria
| | - D M Kepaptsoglou
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury, UK
- School of Physics, Engineering and Technology, University of York, York, UK
| | - Q M Ramasse
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury, UK
- School of Chemical and Process Engineering, University of Leeds, Leeds, UK
- School of Physics and Astronomy, University of Leeds, Leeds, UK
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2
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Banhart F. The Formation and Transformation of Low-Dimensional Carbon Nanomaterials by Electron Irradiation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310462. [PMID: 38700071 DOI: 10.1002/smll.202310462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Revised: 04/19/2024] [Indexed: 05/05/2024]
Abstract
Low-dimensional materials based on graphene or graphite show a large variety of phenomena when they are subjected to irradiation with energetic electrons. Since the 1990s, electron microscopy studies, where a certain irradiation dose is unavoidable, have witnessed unexpected structural transformations of graphitic nanoparticles. It is recognized that electron irradiation is not only detrimental but also bears considerable potential in the formation of new graphitic structures. With the availability of aberration-corrected electron microscopes and the discovery of techniques to produce monolayers of graphene, detailed insight into the atomic processes occurring during electron irradiation became possible. Threshold energies for atom displacements are determined and models of different types of lattice vacancies are confirmed experimentally. However, experimental evidence for the configuration of interstitial atoms in graphite or adatoms on graphene remained indirect, and the understanding of defect dynamics still depends on theoretical concepts. This article reviews irradiation phenomena in graphene- or graphite-based nanomaterials from the scale of single atoms to tens of nanometers. Observations from the 1990s can now be explained on the basis of new results. The evolution of the understanding during three decades of research is presented, and the remaining problems are pointed out.
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Affiliation(s)
- Florian Banhart
- Institut de Physique et Chimie des Matériaux, UMR 7504, Université de Strasbourg, CNRS, Strasbourg, 67034, France
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3
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Tian M, Tennyson WD, Yoon M, Puretzky AA, Geohegan DB, Duscher G, Eres G. Role of Curvature in Stabilizing Boron-Doped Nanocorrugated Graphene. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1276-1282. [PMID: 38109559 DOI: 10.1021/acsami.3c10664] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/20/2023]
Abstract
Boron-doped carbon nanostructures have attracted great interest recently because of their remarkable electrocatalytic performance comparable to or better than that of conventional metal catalysts. In a previous work (Carbon 123, 605 (2017)), we reported that along with significant performance improvement, B doping enhances the oxidation resistance of few-layer graphene (FLG) that provides increased structural stability for intermediate-temperature fuel-cell electrodes. In general, detailed characterization of the atomic and electronic structure transformations that occur in B-doped carbon nanostructures during fuel-cell operation is lacking. In this work, we use aberration-corrected scanning transmission electron microscopy, nanobeam electron diffraction, and electron energy-loss spectroscopy (EELS) to characterize the atomic and electronic structures of B-doped FLG before and after fuel-cell operation. These data point to the nanoscale corrugation of B-doped FLGs as the key factor responsible for increased stability and high corrosion resistance. The similarity of the 1s to π* and σ* transition features in the B K-edge EELS to those in B-doped carbon nanotubes provides an estimate for the curvature of nanocorrugation in B-FLG.
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Affiliation(s)
- Mengkun Tian
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Wesley D Tennyson
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Mina Yoon
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gerd Duscher
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Gyula Eres
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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4
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Xu M, Li A, Pennycook SJ, Gao SP, Zhou W. Probing a Defect-Site-Specific Electronic Orbital in Graphene with Single-Atom Sensitivity. PHYSICAL REVIEW LETTERS 2023; 131:186202. [PMID: 37977630 DOI: 10.1103/physrevlett.131.186202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Accepted: 09/05/2023] [Indexed: 11/19/2023]
Abstract
Visualization of individual electronic states ascribed to specific unoccupied orbitals at the atomic scale can reveal fundamental information about chemical bonding, but it is challenging since bonding often results in only subtle variations in the whole density of states. Here, we utilize atomic-resolution energy-loss near-edge fine structure (ELNES) spectroscopy to map out the electronic states attributed to specific unoccupied p_{z} orbital around a fourfold coordinated silicon point defect in graphene, which is further supported by theoretical calculations. Our results illustrate the power of atomic-resolution ELNES towards the probing of defect-site-specific electronic orbitals in monolayer crystals, providing insights into understanding the effect of chemical bonding on the local properties of defects in solids.
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Affiliation(s)
- Mingquan Xu
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Aowen Li
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Stephen J Pennycook
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shang-Peng Gao
- Department of Materials Science, Fudan University, Shanghai, 200433, People's Republic of China
| | - Wu Zhou
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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5
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Pawelski D, Plonska-Brzezinska ME. Microwave-Assisted Synthesis as a Promising Tool for the Preparation of Materials Containing Defective Carbon Nanostructures: Implications on Properties and Applications. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6549. [PMID: 37834689 PMCID: PMC10573823 DOI: 10.3390/ma16196549] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Revised: 09/27/2023] [Accepted: 09/29/2023] [Indexed: 10/15/2023]
Abstract
In this review, we focus on a small section of the literature that deals with the materials containing pristine defective carbon nanostructures (CNs) and those incorporated into the larger systems containing carbon atoms, heteroatoms, and inorganic components.. Briefly, we discuss only those topics that focus on structural defects related to introducing perturbation into the surface topology of the ideal lattice structure. The disorder in the crystal structure may vary in character, size, and location, which significantly modifies the physical and chemical properties of CNs or their hybrid combination. We focus mainly on the method using microwave (MW) irradiation, which is a powerful tool for synthesizing and modifying carbon-based solid materials due to its simplicity, the possibility of conducting the reaction in solvents and solid phases, and the presence of components of different chemical natures. Herein, we will emphasize the advantages of synthesis using MW-assisted heating and indicate the influence of the structure of the obtained materials on their physical and chemical properties. It is the first review paper that comprehensively summarizes research in the context of using MW-assisted heating to modify the structure of CNs, paying attention to its remarkable universality and simplicity. In the final part, we emphasize the role of MW-assisted heating in creating defects in CNs and the implications in designing their properties and applications. The presented review is a valuable source summarizing the achievements of scientists in this area of research.
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Affiliation(s)
| | - Marta E. Plonska-Brzezinska
- Department of Organic Chemistry, Faculty of Pharmacy with the Division of Laboratory Medicine, Medical University of Bialystok, Mickiewicza 2A, 15-222 Bialystok, Poland;
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6
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Zhang L, Zhang H, Liu K, Hou J, Badamdorj B, Tarakina NV, Wang M, Wang Q, Wang X, Antonietti M. In-Situ Synthesis of PN-Doped Carbon Nanofibers for Single-Atom Catalytic Hydrosilylation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209310. [PMID: 36670489 DOI: 10.1002/adma.202209310] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 12/26/2022] [Indexed: 06/17/2023]
Abstract
Single-atom catalysts have become a popular choice in various catalysis applications, as they take advantages of both homogeneous catalysis (e.g., high efficiency) and heterogeneous catalysis (e.g., easy catalyst recovery). The atom support plays an indispensable role in anchoring atomic species and interplaying with them for ultimate catalytic performance. Therefore, development of new support materials for superior catalysis is of great importance. Here the synthesis of carbon nanofibers based on the reaction between phosphorus pentoxide (P2 O5 ) and N-methyl-2-pyrrolidone (NMP) is reported. The underlying reaction process is systematically investigated by Fourier-transform infrared (FTIR) spectroscopy and nuclear magnetic resonance (NMR) spectroscopy. The carbon nanofibers have interesting PN units in their chemical structure, which act as anchoring sites for the single-atom catalyst. The Pt atoms anchoring carbon nanofibers exhibit high activity for hydrosilylation with a turnover frequency (TOF) of 9.2 × 106 h-1 and a selectivity of >99%. This research affords not only a new in situ chemical strategy to synthesize multiatom doped carbon nanofibers but also presents a potential superior support in catalysis, which opens a hopeful window in materials chemistry and catalysis applications.
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Affiliation(s)
- Liyuan Zhang
- Max Planck Institute of Colloids and Interfaces, Department of Colloid Chemistry, 14476, Potsdam, Germany
- School of Metallurgy and Environment, Central South University, Changsha, 410083, P. R. China
| | - Hange Zhang
- Max Planck Institute of Colloids and Interfaces, Department of Colloid Chemistry, 14476, Potsdam, Germany
| | - Kairui Liu
- Max Planck Institute of Colloids and Interfaces, Department of Colloid Chemistry, 14476, Potsdam, Germany
| | - Jing Hou
- Max Planck Institute of Colloids and Interfaces, Department of Colloid Chemistry, 14476, Potsdam, Germany
| | - Bolortuya Badamdorj
- Max Planck Institute of Colloids and Interfaces, Department of Colloid Chemistry, 14476, Potsdam, Germany
| | - Nadezda V Tarakina
- Max Planck Institute of Colloids and Interfaces, Department of Colloid Chemistry, 14476, Potsdam, Germany
| | - Mengran Wang
- School of Metallurgy and Environment, Central South University, Changsha, 410083, P. R. China
| | - Qiyu Wang
- School of Metallurgy and Environment, Central South University, Changsha, 410083, P. R. China
| | - Xiaohan Wang
- School of Minerals Processing and Bioengineering, Central South University, Changsha, 410083, P. R. China
| | - Markus Antonietti
- Max Planck Institute of Colloids and Interfaces, Department of Colloid Chemistry, 14476, Potsdam, Germany
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7
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Junge F, Auge M, Zarkua Z, Hofsäss H. Lateral Controlled Doping and Defect Engineering of Graphene by Ultra-Low-Energy Ion Implantation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:658. [PMID: 36839025 PMCID: PMC9964514 DOI: 10.3390/nano13040658] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/02/2023] [Accepted: 02/06/2023] [Indexed: 06/18/2023]
Abstract
In this paper, the effectiveness of ultra-low-energy ion implantation as a means of defect engineering in graphene was explored through the measurement of Scanning Kelvin Probe Microscopy (SKPM) and Raman spectroscopy, with boron (B) and helium (He) ions being implanted into monolayer graphene samples. We used electrostatic masks to create a doped and non-doped region in one single implantation step. For verification we measured the surface potential profile along the sample and proved the feasibility of lateral controllable doping. In another experiment, a voltage gradient was applied across the graphene layer in order to implant helium at different energies and thus perform an ion-energy-dependent investigation of the implantation damage of the graphene. For this purpose Raman measurements were performed, which show the different damage due to the various ion energies. Finally, ion implantation simulations were conducted to evaluate damage formation.
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Affiliation(s)
- Felix Junge
- II. Institute of Physics, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - Manuel Auge
- II. Institute of Physics, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - Zviadi Zarkua
- Quantum Solid State Physics, KU Leuven, 3001 Leuven, Belgium
| | - Hans Hofsäss
- II. Institute of Physics, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
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8
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Simulated carbon K edge spectral database of organic molecules. Sci Data 2022; 9:214. [PMID: 35577821 PMCID: PMC9110715 DOI: 10.1038/s41597-022-01303-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2021] [Accepted: 04/01/2022] [Indexed: 11/23/2022] Open
Abstract
Here we provide a database of simulated carbon K (C-K) edge core loss spectra of 117,340 symmetrically unique sites in 22,155 molecules with no more than eight non-hydrogen atoms (C, O, N, and F). Our database contains C-K edge spectra of each carbon site and those of molecules along with their excitation energies. Our database is useful for analyzing experimental spectrum and conducting spectrum informatics on organic materials. Measurement(s) | electron energy loss spectroscopy | Technology Type(s) | density functional theory calculation | Factor Type(s) | organic molecules • carbon sites in a organic molecule |
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9
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Bugnet M, Ederer M, Lazarov VK, Li L, Ramasse QM, Löffler S, Kepaptsoglou DM. Imaging the Spatial Distribution of Electronic States in Graphene Using Electron Energy-Loss Spectroscopy: Prospect of Orbital Mapping. PHYSICAL REVIEW LETTERS 2022; 128:116401. [PMID: 35363018 DOI: 10.1103/physrevlett.128.116401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/04/2021] [Revised: 12/23/2021] [Accepted: 01/25/2022] [Indexed: 06/14/2023]
Abstract
The spatial distributions of antibonding π^{*} and σ^{*} states in epitaxial graphene multilayers are mapped using electron energy-loss spectroscopy in a scanning transmission electron microscope. Inelastic channeling simulations validate the interpretation of the spatially resolved signals in terms of electronic orbitals, and demonstrate the crucial effect of the material thickness on the experimental capability to resolve the distribution of unoccupied states. This work illustrates the current potential of core-level electron energy-loss spectroscopy towards the direct visualization of electronic orbitals in a wide range of materials, of huge interest to better understand chemical bonding among many other properties at interfaces and defects in solids.
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Affiliation(s)
- M Bugnet
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury WA4 4AD, United Kingdom
- School of Chemical and Process Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
- Univ Lyon, CNRS, INSA Lyon, UCBL, MATEIS, UMR 5510, 69621 Villeurbanne, France
| | - M Ederer
- University Service Centre for Transmission Electron Microscopy, TU Wien, Wiedner Hauptstraße 8-10/E057-02, 1040 Wien, Austria
| | - V K Lazarov
- Department of Physics, University of York, York YO10 5DD, United Kingdom
| | - L Li
- Department of Physics and Astronomy, University of West Virginia, Morgantown, West Virginia 26506, USA
| | - Q M Ramasse
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury WA4 4AD, United Kingdom
- School of Chemical and Process Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, United Kingdom
| | - S Löffler
- University Service Centre for Transmission Electron Microscopy, TU Wien, Wiedner Hauptstraße 8-10/E057-02, 1040 Wien, Austria
| | - D M Kepaptsoglou
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury WA4 4AD, United Kingdom
- Department of Physics, University of York, York YO10 5DD, United Kingdom
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10
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Villarreal R, Lin PC, Faraji F, Hassani N, Bana H, Zarkua Z, Nair MN, Tsai HC, Auge M, Junge F, Hofsaess HC, De Gendt S, De Feyter S, Brems S, Åhlgren EH, Neyts EC, Covaci L, Peeters F, Neek-Amal M, Pereira LMC. Breakdown of Universal Scaling for Nanometer-Sized Bubbles in Graphene. NANO LETTERS 2021; 21:8103-8110. [PMID: 34519503 PMCID: PMC9286314 DOI: 10.1021/acs.nanolett.1c02470] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
We report the formation of nanobubbles on graphene with a radius of the order of 1 nm, using ultralow energy implantation of noble gas ions (He, Ne, Ar) into graphene grown on a Pt(111) surface. We show that the universal scaling of the aspect ratio, which has previously been established for larger bubbles, breaks down when the bubble radius approaches 1 nm, resulting in much larger aspect ratios. Moreover, we observe that the bubble stability and aspect ratio depend on the substrate onto which the graphene is grown (bubbles are stable for Pt but not for Cu) and trapped element. We interpret these dependencies in terms of the atomic compressibility of the noble gas as well as of the adhesion energies between graphene, the substrate, and trapped atoms.
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Affiliation(s)
| | - Pin-Cheng Lin
- Quantum
Solid State Physics, KU Leuven, 3001 Leuven, Belgium
| | - Fahim Faraji
- Research
group PLASMANT, Department of Chemistry, Universiteit Antwerpen (UIA), 2610 Antwerpen, Belgium
- Departement
Natuurkunde, Universiteit Antwerpen (UIA), 2610 Antwerpen, Belgium
| | - Nasim Hassani
- Department
of Physics, Shahid Rajaee Teacher Training
University, 16875-163 Lavizan, Tehran, Iran
| | - Harsh Bana
- Quantum
Solid State Physics, KU Leuven, 3001 Leuven, Belgium
| | - Zviadi Zarkua
- Quantum
Solid State Physics, KU Leuven, 3001 Leuven, Belgium
| | - Maya N. Nair
- CUNY
Advanced Science Research Center, 85 St. Nicholas Terrace, New York, New York 10031, United States
| | - Hung-Chieh Tsai
- imec vzw (Interuniversitair
Micro-Electronica Centrum), 3001 Leuven, Belgium
- Department
of Chemistry, Division of Molecular Design and Synthesis, KU Leuven, 3001 Leuven, Belgium
| | - Manuel Auge
- II.Institute
of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Felix Junge
- II.Institute
of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Hans C. Hofsaess
- II.Institute
of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Stefan De Gendt
- imec vzw (Interuniversitair
Micro-Electronica Centrum), 3001 Leuven, Belgium
- Department
of Chemistry, Division of Molecular Design and Synthesis, KU Leuven, 3001 Leuven, Belgium
| | - Steven De Feyter
- Department
of Chemistry, Division of Molecular Imaging and Photonics, KU Leuven, 3001 Leuven, Belgium
| | - Steven Brems
- imec vzw (Interuniversitair
Micro-Electronica Centrum), 3001 Leuven, Belgium
| | | | - Erik C. Neyts
- Research
group PLASMANT, Department of Chemistry, Universiteit Antwerpen (UIA), 2610 Antwerpen, Belgium
| | - Lucian Covaci
- Departement
Natuurkunde, Universiteit Antwerpen (UIA), 2610 Antwerpen, Belgium
| | - François
M. Peeters
- Departement
Natuurkunde, Universiteit Antwerpen (UIA), 2610 Antwerpen, Belgium
| | - Mehdi Neek-Amal
- Department
of Physics, Shahid Rajaee Teacher Training
University, 16875-163 Lavizan, Tehran, Iran
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11
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Ren F, Yao M, Li M, Wang H. Tailoring the Structural and Electronic Properties of Graphene through Ion Implantation. MATERIALS 2021; 14:ma14175080. [PMID: 34501170 PMCID: PMC8434381 DOI: 10.3390/ma14175080] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 08/31/2021] [Accepted: 09/01/2021] [Indexed: 01/29/2023]
Abstract
Ion implantation is a superior post-synthesis doping technique to tailor the structural properties of materials. Via density functional theory (DFT) calculation and ab-initio molecular dynamics simulations (AIMD) based on stochastic boundary conditions, we systematically investigate the implantation of low energy elements Ga/Ge/As into graphene as well as the electronic, optoelectronic and transport properties. It is found that a single incident Ga, Ge or As atom can substitute a carbon atom of graphene lattice due to the head-on collision as their initial kinetic energies lie in the ranges of 25–26 eV/atom, 22–33 eV/atom and 19–42 eV/atom, respectively. Owing to the different chemical interactions between incident atom and graphene lattice, Ge and As atoms have a wide kinetic energy window for implantation, while Ga is not. Moreover, implantation of Ga/Ge/As into graphene opens up a concentration-dependent bandgap from ~0.1 to ~0.6 eV, enhancing the green and blue light adsorption through optical analysis. Furthermore, the carrier mobility of ion-implanted graphene is lower than pristine graphene; however, it is still almost one order of magnitude higher than silicon semiconductors. These results provide useful guidance for the fabrication of electronic and optoelectronic devices of single-atom-thick two-dimensional materials through the ion implantation technique.
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12
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Lin PC, Villarreal R, Achilli S, Bana H, Nair MN, Tejeda A, Verguts K, De Gendt S, Auge M, Hofsäss H, De Feyter S, Di Santo G, Petaccia L, Brems S, Fratesi G, Pereira LMC. Doping Graphene with Substitutional Mn. ACS NANO 2021; 15:5449-5458. [PMID: 33596385 DOI: 10.1021/acsnano.1c00139] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report the incorporation of substitutional Mn atoms in high-quality, epitaxial graphene on Cu(111), using ultralow-energy ion implantation. We characterize in detail the atomic structure of substitutional Mn in a single carbon vacancy and quantify its concentration. In particular, we are able to determine the position of substitutional Mn atoms with respect to the Moiré superstructure (i.e., local graphene-Cu stacking symmetry) and to the carbon sublattice; in the out-of-plane direction, substitutional Mn atoms are found to be slightly displaced toward the Cu surface, that is, effectively underneath the graphene layer. Regarding electronic properties, we show that graphene doped with substitutional Mn to a concentration of the order of 0.04%, with negligible structural disorder (other than the Mn substitution), retains the Dirac-like band structure of pristine graphene on Cu(111), making it an ideal system in which to study the interplay between local magnetic moments and Dirac electrons. Our work also establishes that ultralow-energy ion implantation is suited for substitutional magnetic doping of graphene. Given the flexibility, reproducibility, and scalability inherent to ion implantation, our work creates numerous opportunities for research on magnetic functionalization of graphene and other two-dimensional materials.
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Affiliation(s)
- Pin-Cheng Lin
- Quantum Solid State Physics, KU Leuven, 3001 Leuven, Belgium
| | | | - Simona Achilli
- ETSF and Dipartimento di Fisica "Aldo Pontremoli", Università degli Studi di Milano, Via Celoria, 16, I-20133 Milano, Italy
| | - Harsh Bana
- Quantum Solid State Physics, KU Leuven, 3001 Leuven, Belgium
| | - Maya N Nair
- CUNY Advanced Science Research Center, 85 St. Nicholas Terrace, New York, New York 10031, United States
| | - Antonio Tejeda
- Laboratoire de Physique des Solides, CNRS, Université Paris-Sud, 91405 Orsay, France
| | - Ken Verguts
- imec vzw, 3001 Leuven, Belgium
- Department of Chemistry, Division of Molecular Design and Synthesis, KU Leuven, 3001 Leuven, Belgium
| | - Stefan De Gendt
- imec vzw, 3001 Leuven, Belgium
- Department of Chemistry, Division of Molecular Design and Synthesis, KU Leuven, 3001 Leuven, Belgium
| | - Manuel Auge
- II.Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Hans Hofsäss
- II.Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Steven De Feyter
- Department of Chemistry, Division of Molecular Imaging and Photonics, KU Leuven, 3001 Leuven, Belgium
| | - Giovanni Di Santo
- Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, Italy
| | - Luca Petaccia
- Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, Italy
| | | | - Guido Fratesi
- ETSF and Dipartimento di Fisica "Aldo Pontremoli", Università degli Studi di Milano, Via Celoria, 16, I-20133 Milano, Italy
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13
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COURTNEY E, CONROY M, BANGERT U. Metal configurations on 2D materials investigated via atomic resolution HAADF stem. J Microsc 2020; 279:274-281. [DOI: 10.1111/jmi.12902] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2019] [Revised: 02/28/2020] [Accepted: 05/08/2020] [Indexed: 02/01/2023]
Affiliation(s)
- E. COURTNEY
- TEMUL, Department of Physics, School of Natural Sciences & Bernal InstituteUniversity of Limerick Limerick Ireland
| | - M. CONROY
- TEMUL, Department of Physics, School of Natural Sciences & Bernal InstituteUniversity of Limerick Limerick Ireland
| | - U. BANGERT
- TEMUL, Department of Physics, School of Natural Sciences & Bernal InstituteUniversity of Limerick Limerick Ireland
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14
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He SM, Huang CC, Liou JW, Woon WY, Su CY. Spectroscopic and Electrical Characterizations of Low-Damage Phosphorous-Doped Graphene via Ion Implantation. ACS APPLIED MATERIALS & INTERFACES 2019; 11:47289-47298. [PMID: 31746197 DOI: 10.1021/acsami.9b18479] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Development of n-/p-type semiconducting graphenes is a critical route to implement in graphene-based nanoelectronics and optronics. Compared to the p-type graphene, the n-type graphene is more difficult to be prepared. Recently, phosphorous doping was reported to achieve air-stable and high mobility of n-typed graphene. The phosphorous-doped graphene (P-Gra) by ion implantation is considered as an ideal method for tailoring graphene due to its IC compatible process; however, for a conventional ion implanter, the acceleration energy is in the order of kiloelectron volts (keV), thus severely destroys the sp2 bonding of graphene owing to its high energy of accelerated ions. The introduced defects, therefore, degrade the electrical performance of graphene. Here, for the first time, we report a low-damage n-typed chemical vapor deposition (CVD) graphene by an industrial-compatible ion implanter with an energy of 20 keV where the designed protection layer (thin Au film) covered on as-grown CVD graphene is employed to efficiently reduce defect formation. The additional post-annealing is found to heal the crystal defects of graphene. Moreover, this method allows transferring ultraclean and residue-free P-Gra onto versatile target substrates directly. The doping configuration, crystallinity, and electrical properties on P-Gra were comprehensively studied. The results indicate that the low-damaged P-Gra with a controllable doping concentration of up to 4.22 at % was achieved, which is the highest concentration ever recorded. The doped graphenes with tunable work functions (4.85-4.15 eV) and stable n-type doping while keeping high-carrier mobility are realized. This work contributes to the proof-of-concept for tailoring graphene or 2D materials through doping with an exceptional low defect density by the low energy ion implantation, suggesting a great potential for unconventional doping technologies for next-generation 2D-based nanoelectronics.
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Affiliation(s)
| | | | | | | | - Ching-Yuan Su
- Research Center of New Generation Light Driven Photovoltaic Module , National central University , Tao-Yuan 32001 , Taiwan
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15
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Su C, Tripathi M, Yan QB, Wang Z, Zhang Z, Hofer C, Wang H, Basile L, Su G, Dong M, Meyer JC, Kotakoski J, Kong J, Idrobo JC, Susi T, Li J. Engineering single-atom dynamics with electron irradiation. SCIENCE ADVANCES 2019; 5:eaav2252. [PMID: 31114798 PMCID: PMC6524980 DOI: 10.1126/sciadv.aav2252] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2018] [Accepted: 04/09/2019] [Indexed: 05/24/2023]
Abstract
Atomic engineering is envisioned to involve selectively inducing the desired dynamics of single atoms and combining these steps for larger-scale assemblies. Here, we focus on the first part by surveying the single-step dynamics of graphene dopants, primarily phosphorus, caused by electron irradiation both in experiment and simulation, and develop a theory for describing the probabilities of competing configurational outcomes depending on the postcollision momentum vector of the primary knock-on atom. The predicted branching ratio of configurational transformations agrees well with our atomically resolved experiments. This suggests a way for biasing the dynamics toward desired outcomes, paving the road for designing and further upscaling atomic engineering using electron irradiation.
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Affiliation(s)
- Cong Su
- Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Lab of Electronics (RLE), Massachusetts Institutes of Technology, Cambridge, MA 02139, USA
| | - Mukesh Tripathi
- University of Vienna, Faculty of Physics, Vienna 1090, Austria
| | - Qing-Bo Yan
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zegao Wang
- Interdisciplinary Nanoscience Center (iNano), Aarhus University, Aarhus 8000, Denmark
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zihan Zhang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Christoph Hofer
- University of Vienna, Faculty of Physics, Vienna 1090, Austria
| | - Haozhe Wang
- Research Lab of Electronics (RLE), Massachusetts Institutes of Technology, Cambridge, MA 02139, USA
| | - Leonardo Basile
- Department of Physics, Escuela Politécnica Nacional, Quito 170517, Ecuador
| | - Gang Su
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Kavli Institute for Theoretical Sciences, and CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center (iNano), Aarhus University, Aarhus 8000, Denmark
| | - Jannik C. Meyer
- University of Vienna, Faculty of Physics, Vienna 1090, Austria
| | - Jani Kotakoski
- University of Vienna, Faculty of Physics, Vienna 1090, Austria
| | - Jing Kong
- Research Lab of Electronics (RLE), Massachusetts Institutes of Technology, Cambridge, MA 02139, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Juan-Carlos Idrobo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Toma Susi
- University of Vienna, Faculty of Physics, Vienna 1090, Austria
| | - Ju Li
- Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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16
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Kim Y, Bark H, Kang B, Lee C. Wafer-Scale Substitutional Doping of Monolayer MoS 2 Films for High-Performance Optoelectronic Devices. ACS APPLIED MATERIALS & INTERFACES 2019; 11:12613-12621. [PMID: 30873829 DOI: 10.1021/acsami.8b20714] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
The substitutional doping method is ideally suited to generating doped two-dimensional (2D) materials for practical device applications as it does not damage or destabilize such materials. However, recently reported substitutional doping techniques for 2D materials have given rise to discontinuities and low uniformities, which hamper the extension of such techniques to large-scale production. In the current work, we demonstrated uniform substitutional doping of monolayer MoS2 in a 2 in. wafer of area >13 cm2. The devices based on doped MoS2 showed extremely high uniformity and stability in electrical properties in ambient conditions for 30 days. The photodetectors based on the doped MoS2 samples showed an ultrahigh photoresponsivity of 5 × 105 A/W, a detectivity of 5 × 1012 Jones, and a fast response rate of 5 ms than did those based on undoped MoS2. This work showed the feasibility of real-life applications based on functionalized 2D semiconductors for next-generation electronic and optoelectronic devices.
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17
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Lead Selenide Polycrystalline Coatings Sensitized Using Diffusion and Ion Beam Methods for Uncooled Mid-Infrared Photodetection. COATINGS 2018. [DOI: 10.3390/coatings8120444] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Polycrystalline lead selenide material that is processed after a sensitization technology offers the additional physical effects of carrier recombination suppression and carrier transport manipulation, making it sufficiently sensitive to mid-infrared radiation at room temperature. Low-cost and large-scale integration with existing electronic platforms such as complementary metal–oxide–semiconductor (CMOS) technology and multi-pixel readout electronics enable a photodetector based on polycrystalline lead selenide coating to work in high-speed, low-cost, and low-power consumption applications. It also shows huge potential to compound with other materials or structures, such as the metasurface for novel optoelectronic devices and more marvelous properties. Here, we provide an overview and evaluation of the preparations, physical effects, properties, and potential applications, as well as the optoelectronic enhancement mechanism, of lead selenide polycrystalline coatings.
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18
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Neutralization Dynamics of Slow Highly Charged Ions in 2D Materials. APPLIED SCIENCES-BASEL 2018. [DOI: 10.3390/app8071050] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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19
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Tripathi M, Markevich A, Böttger R, Facsko S, Besley E, Kotakoski J, Susi T. Implanting Germanium into Graphene. ACS NANO 2018; 12:4641-4647. [PMID: 29727567 DOI: 10.1021/acsnano.8b01191] [Citation(s) in RCA: 36] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical and chemical properties, although directly observed substitutions have thus far been limited to incidental Si impurities and P, N and B dopants introduced using low-energy ion implantation. We present here the heaviest impurity to date, namely 74Ge+ ions implanted into monolayer graphene. Although sample contamination remains an issue, atomic resolution scanning transmission electron microscopy imaging and quantitative image simulations show that Ge can either directly substitute single atoms, bonding to three carbon neighbors in a buckled out-of-plane configuration, or occupy an in-plane position in a divacancy. First-principles molecular dynamics provides further atomistic insight into the implantation process, revealing a strong chemical effect that enables implantation below the graphene displacement threshold energy. Our results demonstrate that heavy atoms can be implanted into the graphene lattice, pointing a way toward advanced applications such as single-atom catalysis with graphene as the template.
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Affiliation(s)
- Mukesh Tripathi
- Faculty of Physics , University of Vienna , 1090 Vienna , Austria
| | | | - Roman Böttger
- Institute of Ion Beam Physics and Materials Research , Helmholtz-Zentrum Dresden-Rossendorf , 01314 Dresden , Germany
| | - Stefan Facsko
- Institute of Ion Beam Physics and Materials Research , Helmholtz-Zentrum Dresden-Rossendorf , 01314 Dresden , Germany
| | - Elena Besley
- School of Chemistry , University of Nottingham , NG7 2RD Nottingham , U.K
| | - Jani Kotakoski
- Faculty of Physics , University of Vienna , 1090 Vienna , Austria
| | - Toma Susi
- Faculty of Physics , University of Vienna , 1090 Vienna , Austria
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20
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Hage FS, Hardcastle TP, Gjerding MN, Kepaptsoglou DM, Seabourne CR, Winther KT, Zan R, Amani JA, Hofsaess HC, Bangert U, Thygesen KS, Ramasse QM. Local Plasmon Engineering in Doped Graphene. ACS NANO 2018; 12:1837-1848. [PMID: 29369611 DOI: 10.1021/acsnano.7b08650] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Single-atom B or N substitutional doping in single-layer suspended graphene, realized by low-energy ion implantation, is shown to induce a dampening or enhancement of the characteristic interband π plasmon of graphene through a high-resolution electron energy loss spectroscopy study using scanning transmission electron microscopy. A relative 16% decrease or 20% increase in the π plasmon quality factor is attributed to the presence of a single substitutional B or N atom dopant, respectively. This modification is in both cases shown to be relatively localized, with data suggesting the plasmonic response tailoring can no longer be detected within experimental uncertainties beyond a distance of approximately 1 nm from the dopant. Ab initio calculations confirm the trends observed experimentally. Our results directly confirm the possibility of tailoring the plasmonic properties of graphene in the ultraviolet waveband at the atomic scale, a crucial step in the quest for utilizing graphene's properties toward the development of plasmonic and optoelectronic devices operating at ultraviolet frequencies.
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Affiliation(s)
| | - Trevor P Hardcastle
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury WA4 4AD, U.K
- School of Chemical and Process Engineering, University of Leeds , Leeds LS2 9JT, U.K
| | - Morten N Gjerding
- CAMD and Center for Nanostructured Graphene (CNG), Technical University of Denmark , Fysikvej 1, Building 307, 2800 Kgs. Lyngby, Denmark
| | - Demie M Kepaptsoglou
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury WA4 4AD, U.K
- York NanoCentre, University of York , Heslington, York YO10 5BR, U.K
| | - Che R Seabourne
- School of Chemical and Process Engineering, University of Leeds , Leeds LS2 9JT, U.K
| | - Kirsten T Winther
- CAMD and Center for Nanostructured Graphene (CNG), Technical University of Denmark , Fysikvej 1, Building 307, 2800 Kgs. Lyngby, Denmark
| | - Recep Zan
- Nanotechnology Application and Research Center, Niğde Omer Halisdemir University , Niğde 51000, Turkey
| | - Julian Alexander Amani
- II Physikalisches Institut, Georg-August-Universität Göttingen , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
| | - Hans C Hofsaess
- II Physikalisches Institut, Georg-August-Universität Göttingen , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
| | - Ursel Bangert
- Bernal Institute and Department of Physics, University of Limerick , Limerick, Ireland
| | - Kristian S Thygesen
- CAMD and Center for Nanostructured Graphene (CNG), Technical University of Denmark , Fysikvej 1, Building 307, 2800 Kgs. Lyngby, Denmark
| | - Quentin M Ramasse
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury WA4 4AD, U.K
- School of Chemical and Process Engineering, University of Leeds , Leeds LS2 9JT, U.K
- School of Physics, University of Leeds , Leeds LS2 9JT, U.K
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21
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Pei W, Zhang T, Wang Y, Chen Z, Umar A, Li H, Guo W. Enhancement of charge transfer between graphene and donor-π-acceptor molecule for ultrahigh sensing performance. NANOSCALE 2017; 9:16273-16280. [PMID: 29046916 DOI: 10.1039/c7nr04209d] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In this work, we report the formation of a supramolecular assembly of graphene with a donor-π-acceptor (D-π-A) molecule to detect low concentration NO2. 5-Aminonaphthalene-1-sulfonic acid (ANS) was used herein to π-π stack with reduced graphene oxide (rGO), the resulting π-conjugated bridge being linked by a donor unit (-NH2) and an acceptor unit (-SO3H). The prepared ANS-rGO shows the highest response (Ra/Rg = 13.2 to 10 ppm NO2) so far among the reported organic molecule modified graphene materials, and excellent selectivity and reliable reversibility at room temperature. Furthermore, as revealed through the charge density difference calculation, it is the effective enhancement of charge transfer between ANS and graphene that should be responsible for the sharp improvement of NO2 gas response of the material. Thus, for the first time, we demonstrate that supramolecular assembly of a D-π-A molecule and graphene provides a facile and effective approach to fabrication of high performance graphene-based gas sensors.
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Affiliation(s)
- Wenle Pei
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University, Beijing 100191, P. R. China.
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22
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Berseneva N, Komsa HP, Vierimaa V, Björkman T, Fan Z, Harju A, Todorović M, Krasheninnikov AV, Nieminen RM. Substitutional carbon doping of free-standing and Ru-supported BN sheets: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:415301. [PMID: 28718771 DOI: 10.1088/1361-648x/aa807c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The development of spatially homogeneous mixed structures with boron (B), nitrogen (N) and carbon (C) atoms arranged in a honeycomb lattice is highly desirable, as they open the possibility of creating stable two-dimensional materials with tunable band gaps. However, at least in the free-standing form, the mixed BCN system is energetically driven towards phase segregation to graphene and hexagonal BN. It is possible to overcome the segregation when BCN material is grown on a particular metal substrate, for example Ru(0 0 0 1), but the stabilization mechanism is still unknown. With the use of density-functional theory we study the energetics of BN/Ru slabs, with different types of configurations of C substitutional defects introduced to the h-BN overlayer. The results are compared to the energetics of free-standing BCN materials. We found that the substrate facilitates the C substitution process in the h-BN overlayer. Thus, more homogeneous BCN material can be grown, overcoming the segregation into graphene and h-BN. In addition, we investigate the electronic and transport gaps in free-standing BCN structures, and assess their mechanical properties and stability. The band gap in mixed BCN free-standing material depends on the concentration of the constituent elements and ranges from zero in pristine graphene to nearly 5 eV in free-standing h-BN. This makes BCN attractive for application in modern electronics.
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Affiliation(s)
- N Berseneva
- Department of Applied Physics, Aalto University, PO Box 14100, 00076 Aalto, Finland
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23
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Zhang J, Di Q, Liu J, Bai B, Liu J, Xu M, Liu J. Heterovalent Doping in Colloidal Semiconductor Nanocrystals: Cation-Exchange-Enabled New Accesses to Tuning Dopant Luminescence and Electronic Impurities. J Phys Chem Lett 2017; 8:4943-4953. [PMID: 28925707 DOI: 10.1021/acs.jpclett.7b00351] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Heterovalent doping in colloidal semiconductor nanocrystals (CSNCs), with provisions of extra electrons (n-type doping) or extra holes (p-type doping), could enhance their performance of optical and electronical properties. In view of the challenges imposed by the intrinsic self-purification, self-quenching, and self-compensation effects of CSNCs, we outline the progress on heterovalent doping in CSNCs, with particular focus on the cation-exchange-enabled tuning of dopant luminescence and electronic impurities. Thus, the well-defined substitutional or interstitial heterovalent doping in a deep position of an isolated nanocrystal has been fulfilled. We also envision that new coordination ligand-initiated cation exchange would bring about more choices of heterovalent dopants. With the aid of high-resolution characterization methods, the accurate atom-specific dopant location and distribution could be confirmed clearly. Finally, new applications, some of the remaining unanswered questions, and future directions of this field are presented.
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Affiliation(s)
- Jiatao Zhang
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Qiumei Di
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Jia Liu
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Bing Bai
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Jian Liu
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Meng Xu
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
| | - Jiajia Liu
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing 100081, China
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24
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From Point to Line Defects in Two-Dimensional Transition Metal Dichalcogenides: Insights from Transmission Electron Microscopy and First-Principles Calculations. ACTA ACUST UNITED AC 2017. [DOI: 10.1007/978-3-319-58134-7_6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register]
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25
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Ramasse QM. Twenty years after: How “Aberration correction in the STEM” truly placed a “A synchrotron in a Microscope”. Ultramicroscopy 2017; 180:41-51. [DOI: 10.1016/j.ultramic.2017.03.016] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/31/2016] [Revised: 03/06/2017] [Accepted: 03/14/2017] [Indexed: 10/19/2022]
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26
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Hardcastle TP, Seabourne CR, Kepaptsoglou DM, Susi T, Nicholls RJ, Brydson RMD, Scott AJ, Ramasse QM. Robust theoretical modelling of core ionisation edges for quantitative electron energy loss spectroscopy of B- and N-doped graphene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:225303. [PMID: 28394256 DOI: 10.1088/1361-648x/aa6c4f] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Electron energy loss spectroscopy (EELS) is a powerful tool for understanding the chemical structure of materials down to the atomic level, but challenges remain in accurately and quantitatively modelling the response. We compare comprehensive theoretical density functional theory (DFT) calculations of 1s core-level EEL K-edge spectra of pure, B-doped and N-doped graphene with and without a core-hole to previously published atomic-resolution experimental electron microscopy data. The ground state approximation is found in this specific system to perform consistently better than the frozen core-hole approximation. The impact of including or excluding a core-hole on the resultant theoretical band structures, densities of states, electron densities and EEL spectra were all thoroughly examined and compared. It is concluded that the frozen core-hole approximation exaggerates the effects of the core-hole in graphene and should be discarded in favour of the ground state approximation. These results are interpreted as an indicator of the overriding need for theorists to embrace many-body effects in the pursuit of accuracy in theoretical spectroscopy instead of a system-tailored approach whose approximations are selected empirically.
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Affiliation(s)
- T P Hardcastle
- SuperSTEM Laboratory, STFC Daresbury Campus, Daresbury, WA4 4AD, United Kingdom. School of Chemical and Process Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
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27
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Bayatsarmadi B, Zheng Y, Vasileff A, Qiao SZ. Recent Advances in Atomic Metal Doping of Carbon-based Nanomaterials for Energy Conversion. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13. [PMID: 28402595 DOI: 10.1002/smll.201700191] [Citation(s) in RCA: 136] [Impact Index Per Article: 19.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2017] [Revised: 03/15/2017] [Indexed: 05/17/2023]
Abstract
Nanostructured metal-contained catalysts are one of the most widely used types of catalysts applied to facilitate some of sluggish electrochemical reactions. However, the high activity of these catalysts cannot be sustained over a variety of pH ranges. In an effort to develop highly active and stable metal-contained catalysts, various approaches have been pursued with an emphasis on metal particle size reduction and doping on carbon-based supports. These techniques enhances the metal-support interactions, originating from the chemical bonding effect between the metal dopants and carbon support and the associated interface, as well as the charge transfer between the atomic metal species and carbon framework. This provides an opportunity to tune the well-defined metal active centers and optimize their activity, selectivity and stability of this type of (electro)catalyst. Herein, recent advances in synthesis strategies, characterization and catalytic performance of single atom metal dopants on carbon-based nanomaterials are highlighted with attempts to understand the electronic structure and spatial arrangement of individual atoms as well as their interaction with the supports. Applications of these new materials in a wide range of potential electrocatalytic processes in renewable energy conversion systems are also discussed with emphasis on future directions in this active field of research.
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Affiliation(s)
- Bita Bayatsarmadi
- School of Chemical Engineering, The University of Adelaide, Adelaide, SA, 5005, Australia
| | - Yao Zheng
- School of Chemical Engineering, The University of Adelaide, Adelaide, SA, 5005, Australia
| | - Anthony Vasileff
- School of Chemical Engineering, The University of Adelaide, Adelaide, SA, 5005, Australia
| | - Shi-Zhang Qiao
- School of Chemical Engineering, The University of Adelaide, Adelaide, SA, 5005, Australia
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28
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Ion-beam modification of 2-D materials - single implant atom analysis via annular dark-field electron microscopy. Ultramicroscopy 2017; 176:31-36. [DOI: 10.1016/j.ultramic.2016.12.011] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/26/2016] [Revised: 11/20/2016] [Accepted: 12/06/2016] [Indexed: 10/20/2022]
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29
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Isotope analysis in the transmission electron microscope. Nat Commun 2016; 7:13040. [PMID: 27721420 PMCID: PMC5476802 DOI: 10.1038/ncomms13040] [Citation(s) in RCA: 55] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2016] [Accepted: 08/26/2016] [Indexed: 11/08/2022] Open
Abstract
The Ångström-sized probe of the scanning transmission electron microscope can visualize and collect spectra from single atoms. This can unambiguously resolve the chemical structure of materials, but not their isotopic composition. Here we differentiate between two isotopes of the same element by quantifying how likely the energetic imaging electrons are to eject atoms. First, we measure the displacement probability in graphene grown from either 12C or 13C and describe the process using a quantum mechanical model of lattice vibrations coupled with density functional theory simulations. We then test our spatial resolution in a mixed sample by ejecting individual atoms from nanoscale areas spanning an interface region that is far from atomically sharp, mapping the isotope concentration with a precision better than 20%. Although we use a scanning instrument, our method may be applicable to any atomic resolution transmission electron microscope and to other low-dimensional materials.
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30
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Jiang J, Pachter R, Islam AE, Maruyama B, Boeckl JJ. Defect-induced Raman spectroscopy in single-layer graphene with boron and nitrogen substitutional defects by theoretical investigation. Chem Phys Lett 2016. [DOI: 10.1016/j.cplett.2016.09.067] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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31
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Yoon K, Rahnamoun A, Swett JL, Iberi V, Cullen DA, Vlassiouk IV, Belianinov A, Jesse S, Sang X, Ovchinnikova OS, Rondinone AJ, Unocic RR, van Duin ACT. Atomistic-Scale Simulations of Defect Formation in Graphene under Noble Gas Ion Irradiation. ACS NANO 2016; 10:8376-8384. [PMID: 27532882 DOI: 10.1021/acsnano.6b03036] [Citation(s) in RCA: 57] [Impact Index Per Article: 7.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Despite the frequent use of noble gas ion irradiation of graphene, the atomistic-scale details, including the effects of dose, energy, and ion bombardment species on defect formation, and the associated dynamic processes involved in the irradiations and subsequent relaxation have not yet been thoroughly studied. Here, we simulated the irradiation of graphene with noble gas ions and the subsequent effects of annealing. Lattice defects, including nanopores, were generated after the annealing of the irradiated graphene, which was the result of structural relaxation that allowed the vacancy-type defects to coalesce into a larger defect. Larger nanopores were generated by irradiation with a series of heavier noble gas ions, due to a larger collision cross section that led to more detrimental effects in the graphene, and by a higher ion dose that increased the chance of displacing the carbon atoms from graphene. Overall trends in the evolution of defects with respect to a dose, as well as the defect characteristics, were in good agreement with experimental results. Additionally, the statistics in the defect types generated by different irradiating ions suggested that the most frequently observed defect types were Stone-Thrower-Wales (STW) defects for He(+) irradiation and monovacancy (MV) defects for all other ion irradiations.
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Affiliation(s)
- Kichul Yoon
- Department of Mechanical and Nuclear Engineering, The Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Ali Rahnamoun
- Department of Mechanical and Nuclear Engineering, The Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Jacob L Swett
- Advanced Technology Center, Lockheed Martin Space Systems Company , Palo Alto, California 94304, United States
| | - Vighter Iberi
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
| | | | | | | | | | | | | | | | | | - Adri C T van Duin
- Department of Mechanical and Nuclear Engineering, The Pennsylvania State University , University Park, Pennsylvania 16802, United States
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Schiros T, Nordlund D, Palova L, Zhao L, Levendorf M, Jaye C, Reichman D, Park J, Hybertsen M, Pasupathy A. Atomistic Interrogation of B-N Co-dopant Structures and Their Electronic Effects in Graphene. ACS NANO 2016; 10:6574-6584. [PMID: 27327863 DOI: 10.1021/acsnano.6b01318] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Chemical doping has been demonstrated to be an effective method for producing high-quality, large-area graphene with controlled carrier concentrations and an atomically tailored work function. The emergent optoelectronic properties and surface reactivity of carbon nanostructures are dictated by the microstructure of atomic dopants. Co-doping of graphene with boron and nitrogen offers the possibility to further tune the electronic properties of graphene at the atomic level, potentially creating p- and n-type domains in a single carbon sheet, opening a gap between valence and conduction bands in the 2-D semimetal. Using a suite of high-resolution synchrotron-based X-ray techniques, scanning tunneling microscopy, and density functional theory based computation we visualize and characterize B-N dopant bond structures and their electronic effects at the atomic level in single-layer graphene grown on a copper substrate. We find there is a thermodynamic driving force for B and N atoms to cluster into BNC structures in graphene, rather than randomly distribute into isolated B and N graphitic dopants, although under the present growth conditions, kinetics limit segregation of large B-N domains. We observe that the doping effect of these BNC structures, which open a small band gap in graphene, follows the B:N ratio (B > N, p-type; B < N, n-type; B═N, neutral). We attribute this to the comparable electron-withdrawing and -donating effects, respectively, of individual graphitic B and N dopants, although local electrostatics also play a role in the work function change.
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Affiliation(s)
- Theanne Schiros
- Department of Science and Mathematics, Fashion Institute of Technology/State University of New York , New York, New York 10001, United States
| | - Dennis Nordlund
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | | | | | - Mark Levendorf
- Chemistry Department, Cornell University , Ithaca, New York 10065, United States
| | - Cherno Jaye
- Materials Measurement Laboratory, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States
| | | | - Jiwoong Park
- Chemistry Department, Cornell University , Ithaca, New York 10065, United States
| | - Mark Hybertsen
- Center for Functional Nanomaterials, Brookhaven National Laboratory , Upton, New York 11973, United States
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Bai Z, Zhang L, Liu L. Improving low-energy boron/nitrogen ion implantation in graphene by ion bombardment at oblique angles. NANOSCALE 2016; 8:8761-8772. [PMID: 27065115 DOI: 10.1039/c6nr00983b] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ion implantation is a widely adopted approach to structurally modify graphene and tune its electrical properties for a variety of applications. Further development of the approach requires a fundamental understanding of the mechanisms that govern the ion bombardment process as well as establishment of key relationships between the controlling parameters and the dominant physics. Here, using molecular dynamics simulations with adaptive bond order calculations, we demonstrate that boron and nitrogen ion bombardment at oblique angles (particularly at 70°) can improve both the productivity and quality of perfect substitution by over 25%. We accomplished this by systematically analyzing the effects of the incident angle and ion energy in determining the probabilities of six distinct types of physics that may occur in an ion bombardment event, including reflection, absorption, substitution, single vacancy, double vacancy, and transmission. By analyzing the atomic trajectories from 576,000 simulations, we identified three single vacancy creation mechanisms and four double vacancy creation mechanisms, and quantified their probability distributions in the angle-energy space. These findings further open the door for improved control of ion implantation towards a wide range of applications of graphene.
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Affiliation(s)
- Zhitong Bai
- Department of Mechanical and Aerospace Engineering, Utah State University, Logan, UT 84322, USA.
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Cress CD, Schmucker SW, Friedman AL, Dev P, Culbertson JC, Lyding JW, Robinson JT. Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control. ACS NANO 2016; 10:3714-3722. [PMID: 26910346 DOI: 10.1021/acsnano.6b00252] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We investigate hyperthermal ion implantation (HyTII) as a means for substitutionally doping layered materials such as graphene. In particular, this systematic study characterizes the efficacy of substitutional N-doping of graphene using HyTII over an N(+) energy range of 25-100 eV. Scanning tunneling microscopy results establish the incorporation of N substituents into the graphene lattice during HyTII processing. We illustrate the differences in evolution of the characteristic Raman peaks following incremental doses of N(+). We use the ratios of the integrated D and D' peaks, I(D)/I(D') to assess the N(+) energy-dependent doping efficacy, which shows a strong correlation with previously reported molecular dynamics (MD) simulation results and a peak doping efficiency regime ranging between approximately 30 and 50 eV. We also demonstrate the inherent monolayer depth control of the HyTII process, thereby establishing a unique advantage over other less-specific methods for doping. We achieve this by implementing twisted bilayer graphene (TBG), with one layer of isotopically enriched (13)C and one layer of natural (12)C graphene, and modify only the top layer of the TBG sample. By assessing the effects of N-HyTII processing, we uncover dose-dependent shifts in the transfer characteristics consistent with electron doping and we find dose-dependent electronic localization that manifests in low-temperature magnetotransport measurements.
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Affiliation(s)
- Cory D Cress
- Electronics Science and Technology Division, U.S. Naval Research Laboratory , Washington, DC 20375, United States
| | - Scott W Schmucker
- National Research Council, U.S. Naval Research Laboratory , Washington, DC 20375, United States
| | - Adam L Friedman
- Material Science and Technology Division, U.S. Naval Research Laboratory , Washington, DC 20375, United States
| | - Pratibha Dev
- National Research Council, U.S. Naval Research Laboratory , Washington, DC 20375, United States
- Department of Physics and Astronomy, Howard University , Washington, DC 20059, United States
| | - James C Culbertson
- Electronics Science and Technology Division, U.S. Naval Research Laboratory , Washington, DC 20375, United States
| | - Joseph W Lyding
- Department of Electrical and Computer Engineering, and the Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign , Urbana, Illinois 61801, United States
| | - Jeremy T Robinson
- Electronics Science and Technology Division, U.S. Naval Research Laboratory , Washington, DC 20375, United States
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