Stable Colloidal Quantum Dot Inks Enable Inkjet-Printed High-Sensitivity Infrared Photodetectors

Inkjet printing of heavy-metal-free quantum dots-based devices: a review

Inkjet printing (IJP) has become a versatile, cost-effective technology for fabricating organic and hybrid electronic devices. Heavy-metal-based quantum dots (HM QDs) play a significant role in these inkjet-printed devices due to their excellent optoelectrical properties. Despite their utility, the intrinsic toxicity of HM QDs limits their applications in commercial products. To address this limitation, developing alternative HM-free quantum dots (HMF QDs) that have equivalent optoelectronic properties to HM QD is a promising approach to reduce toxicity and environmental impact. This article comprehensively reviews HMF QD-based devices fabricated using IJP methods. The discussion includes the basics of IJP technology, the formulation of printable HMF QD inks, and solutions to the coffee ring effect. Additionally, this review briefly explores the performance of typical state-of-the-art HMF QDs and cutting-edge characterization techniques for QD inks and printed QD films. The performance of printed devices based on HMF QDs is discussed and compared with those fabricated by other techniques. In the conclusion, the persisting challenges are identified, and perspectives on potential avenues for further progress in this rapidly developing research field are provided.

Short-Wave Infrared Colloidal QD Photodetector with Nanosecond Response Times Enabled by Ultrathin Absorber Layers

Ultrafast short-wavelength infrared (SWIR) photodetection is of great interest for emerging automated vision and spatial mapping technologies. Colloidal quantum dots (QDs) stand out for SWIR photodetection compared to epitaxial (In,Ga)As or (Hg,Cd)Te semiconductors by their combining a size-tunable bandgap and a suitability for cost-effective, solution-based processing. However, achieving ultrafast, nanosecond-level response time has remained an outstanding challenge for QD-based SWIR photodiodes (QDPDs). Here, record 4 ns response time in PbS-based QDPDs that operate at SWIR wavelengths is reported, a result reaching the requirement of SWIR light detection and ranging based on colloidal QDs. These ultrafast QDPDs combine a thin active layer to reduce the carrier transport time and a small area to inhibit slow capacitive discharging. By implementing a concentration gradient ligand exchange method, high-quality p-n junctions are fabricated in these ultrathin QDPDs. Moreover, these ultrathin QDPDs attain an external quantum efficiency of 42% at 1330 nm, due to a 2.5-fold enhanced light absorption through the formation of a Fabry-Perot cavity within the QDPD and the highly efficient extraction (98%) of photogenerated charge carriers. Based on these results, it is estimated that a further increase of the charge-carrier mobility can lead to PbS QDPDs with sub-nanosecond response time.

Colloidal InAs Quantum Dot-Based Infrared Optoelectronics Enabled by Universal Dual-Ligand Passivation

Solution-processed low-bandgap semiconductors are crucial to next-generation infrared (IR) detection for various applications, such as autonomous driving, virtual reality, recognitions, and quantum communications. In particular, III-V group colloidal quantum dots (CQDs) are interesting as nontoxic bandgap-tunable materials and suitable for IR absorbers; however, the device performance is still lower than that of Pb-based devices. Herein, a universal surface-passivation method of InAs CQDs enabled by intermediate phase transfer (IPT), a preliminary process that exchanges native ligands with aromatic ligands on the CQD surface is presented. IPT yields highly stable CQD ink. In particular, desirable surface ligands with various reactivities can be obtained by dispersing them in green solvents. Furthermore, CQD near-infrared (NIR) photodetectors are demonstrated using solution processes. Careful surface ligand control via IPT is revealed that enables the modulation of surface-mediated photomultiplication, resulting in a notable gain control up to ≈10 with a fast rise/fall response time (≈12/36 ns). Considering the figure of merit (FOM), EQE versus response time (or -3 dB bandwidth), the optimal CQD photodiode yields one of the highest FOMs among all previously reported solution-processed nontoxic semiconductors comprising organics, perovskites, and CQDs in the NIR wavelength range.

An ultra-sensitive colloidal quantum dot infrared photodiode exceeding 100 000% external quantum efficiency via photomultiplication

In this study, we present ultrasensitive infrared photodiodes based on PbS colloidal quantum dots (CQDs) using a double photomultiplication strategy that utilizes the accumulation of both electron and hole carriers. While electron accumulation was induced by ZnO trap states that were created by treatment in a humid atmosphere, hole accumulation was achieved using a long-chain ligand that increased the barrier to hole collection. Interestingly, we obtained the highest responsivity in photo-multiplicative devices with the long ligands, which contradicts the conventional belief that shorter ligands are more effective for optoelectronic devices. Using these two charge accumulation effects, we achieved an ultrasensitive detector with a responsivity above 7.84 × 102 A W-1 and an external quantum efficiency above 105% in the infrared region. We believe that the photomultiplication effect has great potential for surveillance systems, bioimaging, remote sensing, and quantum communication.

Interface Engineering to Drive High-Performance MXene/PbS Quantum Dot NIR Photodiode

The realization of a controllable transparent conducting system with selective light transparency is crucial for exploring many of the most intriguing effects in top-illuminated optoelectronic devices. However, the performance is limited by insufficient electrical conductivity, low work function, and vulnerable interface of traditional transparent conducting materials, such as tin-doped indium oxide. Here, it is reported that two-dimensional (2D) titanium carbide (Ti3 C2 Tx ) MXene film acts as an efficient transparent conducting electrode for the lead sulfide (PbS) colloidal quantum dots (CQDs) photodiode with controllable near infrared transmittance. The solution-processed interface engineering of MXene and PbS layers remarkably reduces the interface defects of MXene/PbS CQDs and the carrier concentration in the PbS layer. The stable Ti3 C2 Tx /PbS CQDs photodiodes give rise to a high specific detectivity of 5.51 × 1012  cm W-1  Hz1/2 , a large dynamic response range of 140 dB, and a large bandwidth of 0.76 MHz at 940 nm in the self-powered state, ranking among the most exceptional in terms of comprehensive performance among reported PbS CQDs photodiodes. In contrast with the traditional photodiode technologies, this efficient and stable approach opens a new horizon to construct widely used infrared photodiodes with CQDs and MXenes.

Stable PbS colloidal quantum dot inks enable blade-coating infrared solar cells

Infrared solar cells are more effective than normal bandgap solar cells at reducing the spectral loss in the near-infrared region, thus also at broadening the absorption spectra and improving power conversion efficiency. PbS colloidal quantum dots (QDs) with tunable bandgap are ideal infrared photovoltaic materials. However, QD solar cell production suffers from small-area-based spin-coating fabrication methods and unstable QD ink. Herein, the QD ink stability mechanism was fully investigated according to Lewis acid-base theory and colloid stability theory. We further studied a mixed solvent system using dimethylformamide and butylamine, compatible with the scalable manufacture of method-blade coating. Based on the ink system, 100 cm2 of uniform and dense near-infrared PbS QDs (~ 0.96 eV) film was successfully prepared by blade coating. The average efficiencies of above absorber-based devices reached 11.14% under AM1.5G illumination, and the 800 nm-filtered efficiency achieved 4.28%. Both were the top values among blade coating method based devices. The newly developed ink showed excellent stability, and the device performance based on the ink stored for 7 h was similar to that of fresh ink. The matched solvent system for stable PbS QD ink represents a crucial step toward large area blade coating photoelectric devices.

Recent Progress in Colloidal Quantum Dot Thermoelectrics

Semiconducting colloidal quantum dots (CQDs) represent an emerging class of thermoelectric materials for use in a wide range of future applications. CQDs combine solution processability at low temperatures with the potential for upscalable manufacturing via printing techniques. Moreover, due to their low dimensionality, CQDs exhibit quantum confinement and a high density of grain boundaries, which can be independently exploited to tune the Seebeck coefficient and thermal conductivity, respectively. This unique combination of attractive attributes makes CQDs very promising for application in emerging thermoelectric generator (TEG) technologies operating near room temperature. Herein, recent progress in CQDs for application in emerging thin-film thermoelectrics is reviewed. First, the fundamental concepts of thermoelectricity in nanostructured materials are outlined, followed by an overview of the popular synthetic methods used to produce CQDs with controllable sizes and shapes. Recent strides in CQD-based thermoelectrics are then discussed with emphasis on their application in thin-film TEGs. Finally, the current challenges and future perspectives for further enhancing the performance of CQD-based thermoelectric materials for future applications are discussed.

High-Performance and Stable Colloidal Quantum Dots Imager via Energy Band Engineering

Solution-processed colloidal quantum dot (CQD) photodiodes are compatible for monolithic integration with silicon-based readout circuitry, enabling ultrahigh resolution and ultralow cost infrared imagers. However, top-illuminated CQD photodiodes for longer infrared imaging suffer from mismatched energy band alignment between narrow-bandgap CQDs and the electron transport layer. In this work, we designed a new top-illuminated structure by replacing the sputtered ZnO layer with a SnO₂ layer by atomic layer deposition. Benefiting from matched energy band alignment and improved heterogeneous interface, our top-illuminated CQD photodiodes achieve a broad-band response up to 1650 nm. At 220 K, these SnO₂-based devices exhibit an ultralow dark current density of 3.5 nA cm^-2 at -10 mV, reaching the noise limit for passive night vision. The detectivity is 4.1 × 10¹² Jones at 1530 nm. These SnO₂-based devices also demonstrate exceptional operation stability. By integrating with silicon-based readout circuitry, our CQD imager realizes water/oil discrimination and see-through smoke imaging.

Efficient Near-Infrared Organic Photodetectors with Spectral Response up to 1600 nm for Accurate Alcohol Concentration Detection

The development of near-infrared organic photodetectors (NIR-OPDs) in 1000-1700 nm is essential for medical monitoring, food quality inspection, machine vision, and biomedical imaging. However, when solving the high dark current density (J_D) in bulk-heterojunction (BHJ) NIR-OPDs based on narrow-bandgap systems, it is often accompanied by photocurrent loss, which is a great challenge in achieving high-performance NIR-OPDs. Here, an ideal hybrid pseudo-PHJ (planar-heterojunction)/BHJ structure is proposed to overcome this challenge, which is introducing the N2200 layer between the cathode and BHJ. The introduction of the N2200 raises the external charge injection barrier and reduces the trap density, thus achieving significant suppression of J_D (6.22 × 10^-7 A cm^-2 at -0.2 V bias, about 2 orders of magnitude lower compared to the BHJ NIR-OPDs). Meanwhile, the hybrid structure combines the advantages of PHJ and BHJ, thus maintaining a high photocurrent, resulting in responsivity and detectivity of 18.71 mA W^-1 and 4.19 × 10¹⁰ Jones, respectively, at 1400 nm at -0.2 V bias, which is superior to the performance of BHJ NIR-OPDs. And the hybrid structured NIR-OPDs are proven to rapidly quantify the alcohol content of mixtures to within 2% accuracy, which exhibits great potential for application in the food and pharmaceutical industries.

Large-area flexible colloidal-quantum-dot infrared photodiodes for photoplethysmogram signal measurements

Epitaxially grown photodiodes are the foundation of infrared photodetection technology; however, their rigid structure and limited area scaling limit their use in advanced applications. Colloidal-quantum-dot (CQD) infrared photodiodes have increased active areas through solution processing, and are thus potential candidates for large-area flexible photodetection, but these large-area photodiodes have disadvantages such as large dark current density, poor homogeneity, and poor stability. Therefore, this study established a fabrication strategy for large-area flexible CQD photodiodes that involves introducing polyimide to CQD ink to improve CQD passivation, monodisperse ink persistence, and film morphology. The resulting CQD photodiodes exhibited reduced dark current density and improved homogeneity and work stability. Furthermore, the as-prepared photodiodes exhibited a detectivity (D*) of greater than 10¹³ Jones, which was higher than other reported CQD photodetectors. The CQD photodiodes developed in this study can be used for wearable photoplethysmogram (PPG) signal measurement under ambient light at reduced cost and power consumption..

High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

Quantum dots have found significant applications in photoelectric detectors due to their unique electronic and optical properties, such as tunable bandgap. Recently, colloidal quantum dots (CQDs) have attracted much interest because of the ease of controlling the dot size and low production cost. In this paper, a high-performance ZnO/PbS heterojunction photodetector was fabricated by spin-coating PbS CQDs onto the surface of a hydrothermally grown vertical array of ZnO nanowires (NWs) on an indium tin oxide (ITO) substrate. Under 940 nm near-infrared light illumination, the device demonstrated a responsivity and detectivity of ~3.9 × 10⁴ A/W and ~9.4 × 10¹³ Jones, respectively. The excellent performances and low cost of this nanocomposite-based photodetector show that it has the potential for widespread applications ranging from medical diagnosis to environmental monitoring.

Photosensitisation of inkjet printed graphene with stable all-inorganic perovskite nanocrystals

All-inorganic perovskite nanocrystals (NCs) with enhanced environmental stability are of particular interest for optoelectronic applications. Here we report on the formulation of CsPbX₃ (X is Br or I) inks for inkjet deposition and utilise these NCs as photosensitive layers in graphene photodetectors, including those based on single layer graphene (SLG) as well as inkjet-printed graphene (iGr) devices. The performance of these photodetectors strongly depends on the device structure, geometry and the fabrication process. We achieve a high photoresponsivity, R > 10⁶ A W^-1 in the visible wavelength range and a spectral response controlled by the halide content of the perovskite NC ink. By utilising perovskite NCs, iGr and gold nanoparticle inks, we demonstrate a fully inkjet-printed photodetector with R ≈ 20 A W^-1, which is the highest value reported to date for this type of device. The performance of the perovskite/graphene photodetectors is explained by transfer of photo-generated charge carriers from the perovskite NCs into graphene and charge transport through the iGr network. The perovskite ink developed here enabled realisation of stable and sensitive graphene-based photon detectors. Compatibility of inkjet deposition with conventional Si-technologies and with flexible substrates combined with high degree of design freedom provided by inkjet deposition offers opportunities for partially and fully printed optoelectronic devices for applications ranging from electronics to environmental sciences.

Organic and quantum dot hybrid photodetectors: towards full-band and fast detection

Photodetectors hold great application potential in many fields such as image sensing, night vision, infrared communication and health monitoring. To date, commercial photodetectors mainly rely on inorganic semiconductors, e.g., monocrystalline silicon, germanium, and indium selenide/gallium with complex and costly fabrication, which are hardly compatible with wearable electronics. In contrast, organic conjugated materials provide great superiority in flexibility and stretchability. In this Highlight, the unique properties of organic and quantum dot photodetectors were firstly discussed to reveal the great complementarity of the two technologies. Subsequently, the recent advance of organic/quantum dot hybrid photodetectors was outlined to highlight their great potential in developing broadband and high-performance photodetectors. Moreover, the multiple functions (e.g., dual-band detection and upconversion detection) of hybrid photodetectors were highlighted for their promising application in image sensing and infrared detection. Lastly, we present a forword-looking discussion on the challenges and our insights for the further advancement of hybrid photodetectors. This work may spark enormous research attention in organic/quantum dot electronics and advance the commercial applications.

Electron-Transport Layers Employing Strongly Bound Ligands Enhance Stability in Colloidal Quantum Dot Infrared Photodetectors

Solution-processed photodetectors based on colloidal quantum dots (CQDs) are promising candidates for short-wavelength infrared light sensing applications. Present-day CQD photodetectors employ a CQD active layer sandwiched between carrier-transport layers in which the electron-transport layer (ETL) is composed of metal oxides. Herein, a new class of ETLs is developed using n-type CQDs, finding that these benefit from quantum-size effect tuning of the band energies, as well as from surface ligand engineering. Photodetectors operating at 1450 nm are demonstrated using CQDs with tailored functionalities for each of the transport layers and the active layer. By optimizing the band alignment between the ETL and the active layer, CQD photodetectors that combine a low dark current of ≈1 × 10^-3 mA cm^-2 with a high external quantum efficiency of ≈66% at 1 V are reported, outperforming prior reports of CQD photodetectors operating at >1400 nm that rely on metal oxides as ETLs. It is shown that stable CQD photodetectors rely on well-passivated CQDs: for ETL CQDs, a strongly bound organic ligand trans-4-(trifluoromethyl)cinnamic acid (TFCA) provides improved passivation compared to the weakly bound inorganic ligand tetrabutylammonium iodide (TBAI). TFCA suppresses bias-induced ion migration inside the ETL and improves the operating stability of photodetectors by 50× compared to TBAI.

Ligand-Free Direct Optical Lithography of Bare Colloidal Nanocrystals via Photo-Oxidation of Surface Ions with Porosity Control

Microscale patterning of colloidal nanocrystal (NC) films is important for their integration in devices. Here, we introduce the direct optical patterning of all-inorganic NCs without the use of additional photosensitive ligands or additives. We determined that photoexposure of ligand-stripped, "bare" NCs in air significantly reduces their solubility in polar solvents due to photo-oxidation of surface ions. Doses as low as 20 mJ/cm² could be used; the only obvious criterion for material selection is that the NCs need to have significant absorption at the irradiation wavelength. However, transparent NCs can still be patterned by mixing them with suitably absorbing NCs. This approach enabled the patterning of bare ZnSe, CdSe, ZnS, InP, CeO₂, CdSe/CdS, and CdSe/ZnS NCs as well as mixtures of ZrO₂ or HfO₂ NCs with ZnSe NCs. Optical, X-ray photoelectron, and infrared spectroscopies show that solubility loss results from desorption of bound solvent due to photo-oxidation of surface ions. We also demonstrate two approaches, compatible with our patterning method, for modulating the porosity and refractive index of NC films. Block copolymer templating decreases the film density, and thus the refractive index, by introducing mesoporosity. Alternatively, hot isostatic pressing increases the packing density and refractive index of NC layers. For example, the packing fraction of a ZnS NC film can be increased from 0.51 to 0.87 upon hot isostatic pressing at 450 °C and 15 000 psi. Our findings demonstrate that direct lithography by photo-oxidation of bare NC surfaces is an accessible patterning method for facilitating the exploration of more complex NC device architectures while eliminating the influence of bulky or insulating surfactants.

Zinc Carboxylate Surface Passivation for Enhanced Optical Properties of In(Zn)P Colloidal Quantum Dots

Indium phosphide (InP) colloidal quantum dots (CQDs) have generated great interest as next-generation light-emitting materials owing to their narrow emission spectra and environment-friendly components. The minimized surface defects is essential to achieve narrow full-width at half-maximum (FWHM) and high photoluminescence quantum yield (PLQY). However, InP CQDs are readily oxidized in ambient condition, which results in formation of oxidation defect states on the surface of InP CQDs. Herein, we introduce a strategy to successfully passivate the surface defects of InP core by zinc complexes. The zinc carboxylates passivation reduces FWHM of InP CQDs from 130 nm to 70 nm and increases PLQY from 1% to 14% without shelling. Furthermore, the photoluminescence (PL) peak has shifted from 670 nm to 510 nm with an increase of zinc carboxylates passivation, which suggests that excessive zinc carboxylates functions as a size-regulating reagent in the synthesis.

Elucidating the Gain Mechanism in PbS Colloidal Quantum Dot Visible-Near-Infrared Photodiodes

The responsivities of colloidal quantum dot (CQD) photodiodes are not satisfactory (∼0.3 A W^-1) due to the lack of gain. Here, visible-near-infrared PbS CQD photodiodes with a peak responsivity of ∼1 A W^-1 and external quantum efficiencies larger than 100% are demonstrated. The gain is realized by electron tunneling injection through the Schottky junction (PbS-EDT/Au) with barrier height reduced to 0.27 eV, originating from the capture of photogenerated holes at the negatively charged acceptor traps generated in the oxidized hole-transport layer PbS-EDT. The resulting device exhibits a peak detectivity of ∼8 × 10¹¹ jones at -1 V. Additionally, the response speed (400 μs) is not sacrificed by the trap states because of the dominated faster electron drift motion in the fully depleted device. Our results provide an accurate elucidation of the gain mechanism in CQD photodiodes and promise them great potential in weak light detection.

Limiting Factors of Detectivity in Near-Infrared Colloidal Quantum Dot Photodetectors

Lead sulfide colloidal quantum dots (PbS CQDs) have shown great potential in photodetectors owing to their promising optical properties, especially their strong and tunable absorption. However, the limitation of the specific detectivity (D*) in CQD near-infrared (NIR) photodetectors remains unknown due to the ambiguous noise analysis. Therefore, a clear understanding of the noise current is critically demanded. Here, we elucidate that the noise current is the predominant factor limiting D*, and the noise is highly dependent on the trap densities in halide-passivated PbS films and the carriers injected from the Schottky contact (EDT-passivated PbS films/metal). It is found that the thickness of CQDs is proportional to their interface trap density, while it is inversely proportional to their minimal bulk trap density. A balance point can be reached at a certain thickness (136 nm) to minimize the trap density, giving rise to the improvement of D*. Utilizing thicker PbS-EDT films broadens the width of the tunneling barrier and thereby reduces the carrier injection, contributing to a further enhancement of D*. The limiting factors of D* determined in this work not only explain the physical mechanism of the influence on detection sensitivity but also give guidance to the design of high-performance CQD photodetectors.

SWIR imaging using PbS QD photodiode array sensors

We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10^-3 A/W and 1.20 × 10^-2 A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.

Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection

Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and Nb:TiO₂ as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46±5% and are sensitive for SWIR light up to 1400 nm.

Suitable Cathode NMP Replacement for Efficient Sustainable Printed Li-Ion Batteries

N-methyl-2-pyrrolidone (NMP) is the most common solvent for manufacturing cathode electrodes in the battery industry; however, it is becoming restricted in several countries due to its negative environmental impact. Taking into account that ∼99% of the solvent used during electrode fabrication is recovered, dimethylformamide (DMF) is a considerable candidate to replace NMP. The lower boiling point and higher ignition temperature of DMF lead to a significant reduction in the energy consumption needed for drying the electrodes and improve the safety of the production process. Additionally, the lower surface tension and viscosity of DMF enable improved current collector wetting and higher concentrations of the solid material in the cathode slurry. To verify the suitability of DMF as a replacement for NMP, we utilized screen printing, a fabrication method that provides roll-to-roll compatibility while allowing controlled deposition and creation of sophisticated patterns. The battery systems utilized NMC (LiNi _x Mn _y Co _z O₂) chemistry in two configurations: NMC523 and NMC88. The first, well-established NCM523, was used as a reference, while NMC88 was used to demonstrate the potential of the proposed method with high-capacity materials. The cathodes were used to create coin and pouch cell batteries that were cycled 1000 times. The achieved results indicate that DMF can successfully replace NMP in the NMC cathode fabrication process without compromising battery performance. Specifically, both the NMP blade-coated and DMF screen-printed batteries retained 87 and 90% of their capacity after 1000 (1C/1C) cycles for NMC523 and NMC88, respectively. The modeling results of the drying process indicate that utilizing a low-boiling-point solvent (DMF) instead of NMP can reduce the drying energy consumption fourfold, resulting in a more environmentally friendly battery production process.

Combining printing and nanoparticle assembly: Methodology and application of nanoparticle patterning

Functional nanoparticles (NPs) with unique photoelectric, mechanical, magnetic, and chemical properties have attracted considerable attention. Aggregated NPs rather than individual NPs are generally required for sensing, electronics, and catalysis. However, the transformation of functional NP aggregates into scalable, controllable, and affordable functional devices remains challenging. Printing is a promising additive manufacturing technology for fabricating devices from NP building blocks because of its capabilities for rapid prototyping and versatile multifunctional manufacturing. This paper reviews recent advances in NP patterning based on the combination of self-assembly and printing technologies (including two-, three-, and four-dimensional printing), introduces the basic characteristics of these methods, and discusses various fields of NP patterning applications.

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Nanoparticles (NPs) printing assembly is a good solution for patterned devices

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NPs assembly can be combined with 2D, 3D, and 4D printing technologies

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A variety of ink-dispersed NPs are available for printing assembly

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NPs printing assembly technology is applied for nanosensing, energy storage, photodetector

Controlled Crystal Plane Orientations in the ZnO Transport Layer Enable High-Responsivity, Low-Dark-Current Infrared Photodetectors

Colloidal quantum dots (CQD) have emerged as attractive materials for infrared (IR) photodetector (PD) applications because of their tunable bandgaps and facile processing. Presently, zinc oxide is the electron-transport layer (ETL) of choice in CQD PDs; however, ZnO relies on continuous ultraviolet (UV) illumination to remove adsorbed oxygen and maintain high external quantum efficiency (EQE), speed, and photocurrent. Here, it is shown that ZnO is dominated by electropositive crystal planes which favor excessive oxygen adsorption, and that this leads to a high density of trap states, an undesired shift in band alignment, and consequent poor performance. Over prolonged operation without UV exposure, oxygen accumulates at the electropositive planes, trapping holes and degrading performance. This problem is addressed by developing an electroneutral plane composition at the ZnO surface, aided by atomic layer deposition (ALD) as the means of materials processing. It is found that ALD ZnO has 10× lower binding energy for oxygen than does conventionally deposited ZnO. IR CQD PDs made with this ETL do not require UV activation to maintain low dark current and high EQE.

Colloidal Quantum Dot Solar Cells: Progressive Deposition Techniques and Future Prospects on Large-Area Fabrication

Colloidally grown nanosized semiconductors yield extremely high-quality optoelectronic materials. Many examples have pointed to near perfect photoluminescence quantum yields, allowing for technology-leading materials such as high purity color centers in display technology. Furthermore, because of high chemical yield, and improved understanding of the surfaces, these materials, particularly colloidal quantum dots (QDs) can also be ideal candidates for other optoelectronic applications. Given the urgent necessity toward carbon neutrality, electricity from solar photovoltaics will play a large role in the power generation sector. QDs are developed and shown dramatic improvements over the past 15 years as photoactive materials in photovoltaics with various innovative deposition properties which can lead to exceptionally low-cost and high-performance devices. Once the key issues related to charge transport in optically thick arrays are addressed, QD-based photovoltaic technology can become a better candidate for practical application. In this article, the authors show how the possibilities of different deposition techniques can bring QD-based solar cells to the industrial level and discuss the challenges for perovskite QD solar cells in particular, to achieve large-area fabrication for further advancing technology to solve pivotal energy and environmental issues.

Printed electronics to accelerate solid-state battery development

The transition from conventional liquid electrolyte Li-ion batteries towards solid-state systems requires a paradigm shift on how these batteries are fabricated and how the R&D process can be augmented in order to fulfil the ever-increasing demand for reliable and high-performance energy storage systems. This work briefly looks over the main aspects of printed electronics and its potential to accelerate the development of solid-state batteries. It emphasizes the main challenges related to the fabrication of solid-state batteries and how printed electronics can address them in a timely and affordable manner. Importantly, the proposed printed electronics methods and solutions highlight the ability for immediate upscaling to mass production as well as downscaling for rapid prototyping and custom designing.

Thermodynamics of nanocrystal–ligand binding through isothermal titration calorimetry

Manipulations of nanocrystal (NC) surfaces have propelled the applications of colloidal NCs across various fields such as bioimaging, catalysis, electronics, and sensing applications.

Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices

Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.

Plasmon-exciton interaction strongly increases the efficiency of a quantum dot-based near-infrared photodetector operating in the two-photon absorption mode under normal conditions

Semiconductor quantum dots (QDs) are known for their high two-photon absorption (TPA) capacity. This allows them to efficiently absorb infrared photons with energies lower than the bandgap energy. Moreover, TPA in QDs can be further enhanced by the interaction of excitons of the QDs with plasmons of a metal nanoparticle. We fabricated nonlinear plasmon-exciton photodetectors based on QDs and silver nanoplates (SNPs) to demonstrate the optoelectronic application of these effects. A thin layer of CdSe QDs was used as a source of charge carriers for a photoresistor-type photodetector. SNPs with near-infrared plasmon modes were introduced into the layer of QDs to increase the light absorption efficiency. Under near-infrared irradiation, the power of the dependence of the photocurrent on the excitation intensity was twice the power of the corresponding dependence under one-photon excitation with visible light. This proved that the new photodetector efficiently operated under two-photon excitation. Although the SNP light absorption was linear, energy was transferred from plasmons to excitons in the two-quantum mode, which led to a nonlinear dependence. Moreover, we found that the photocurrent from the designed photodetector containing the QD-SNP composite was an order of magnitude higher than that from a photodetector containing QDs alone. This can be explained by the plasmon-induced increase in the TPA efficiency.

Silicon Surface Passivation for Silicon-Colloidal Quantum Dot Heterojunction Photodetectors

Sensitizing crystalline silicon (c-Si) with an infrared-sensitive material, such as lead sulfide (PbS) colloidal quantum dots (CQDs), provides a straightforward strategy for enhancing the infrared-light sensitivity of a Si-based photodetector. However, it remains challenging to construct a high-efficiency photodetector based upon a Si:CQD heterojunction. Herein, we demonstrate that Si surface passivation is crucial for building a high-performance Si:CQD heterojunction photodetector. We have studied one-step methyl iodine (CH₃I) and two-step chlorination/methylation processes for Si surface passivation. Transient photocurrent (TPC) and transient photovoltage (TPV) decay measurements reveal that the two-step passivated Si:CQD interface exhibits fewer trap states and decreased recombination rates. These passivated substrates were incorporated into prototype Si:CQD infrared photodiodes, and the best performance photodiode based upon the two-step passivation shows an external quantum efficiency (EQE) of 31% at 1280 nm, which represents a near 2-fold increase over the standard device based upon the one-step CH₃I passivated Si.

A p-type PbS quantum dot ink with improved stability for solution processable optoelectronics

A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA) capped QDs stable in benzylamine solvent over a period of weeks or longer. The film resistivity, 1.45 kΩ cm, is an order magnitude lower and surface roughness, ∼ 0.5 nm, is superior vs. PbS films reported so far, and proof of concept photovoltaic devices showed efficiency > 5.5%.

Solvent Engineering of Colloidal Quantum Dot Inks for Scalable Fabrication of Photovoltaics

Development of colloidal quantum dot (CQD) inks enables single-step spin-coating of compact CQD films of appropriate thickness, enabling the promising performance of CQD photovoltaics (CQDPVs). Today's highest-performing CQD inks rely on volatile n-butylamine (BTA), but it is incompatible with scalable deposition methods since a rapid solvent evaporation results in irregular film thickness with an uneven surface. Here, we present a hybrid solvent system, consisting of BTA and N,N-dimethylformamide, which has a favorable acidity for colloidal stability as well as an appropriate vapor pressure, enabling a stable CQD ink that can be used to fabricate homogeneous, large-area CQD films via spray-coating. CQDPVs fabricated with the CQD ink exhibit suppressed charge recombination as well as fast charge extraction compared with conventional CQD ink-based PVs, achieving an improved power conversion efficiency (PCE) of 12.22% in spin-coated devices and the highest ever reported PCE of 8.84% among spray-coated CQDPVs.

Enhanced detectivity of PbS quantum dots infrared photodetector by introducing the tunneling effect of PMMA

With extremely high optical absorption coefficient in infrared regime, lead sulfide (PbS) quantum dots (QDs)-based photodetectors are promising for diverse applications. In recent years, synthesis of materials has made great progress, but the problem of low sensitivity of quantum dots photodetector still unresolved. In this work, the introduction of a tunneling organic layer effectively address this problem. The dark current is decreased by the appropriate thickness of polymethyl methacrylate (PMMA) barrier layer by suppressing the spontaneous migration of ions, and the photogenerated carriers are little effected, thereby the responsivity of the device is improved. As a result, the device exhibits a high responsivity of 3.73 × 10⁵ mA W^-1 and a giant specific detectivity of 4.01 × 10¹³ Jones at a low voltage of -1 V under 1064 nm illumination. In the self-powered mode, the responsivity reaches a value of 157.6 mA W^-1, and the detectivity up to 5.9 × 10¹¹ Jones. The performance of the photodetectors is obviously better than most of the reported QDs photodetectors. The design of this device structure provides a new solution to the problem of low sensitivity and high leakage current of quantum dots based infrared photodetectors.

Scalable PbS Quantum Dot Solar Cell Production by Blade Coating from Stable Inks

The recent development of phase transfer ligand exchange methods for PbS quantum dots (QD) has enhanced the performance of quantum dots solar cells and greatly simplified the complexity of film deposition. However, the dispersions of PbS QDs (inks) used for film fabrication often suffer from colloidal instability, which hinders large-scale solar cell production. In addition, the wasteful spin-coating method is still the main technique for the deposition of QD layer in solar cells. Here, we report a strategy for scalable solar cell fabrication from highly stable PbS QD inks. By dispersing PbS QDs capped with CH3NH3PbI3 in 2,6-difluoropyridine (DFP), we obtained inks that are colloidally stable for more than 3 months. Furthermore, we demonstrated that DFP yields stable dispersions even of large diameter PbS QDs, which are of great practical relevance owing to the extended coverage of the near-infrared region. The optimization of blade-coating deposition of DFP-based inks enabled the fabrication of PbS QD solar cells with power conversion efficiencies of up to 8.7%. It is important to underline that this performance is commensurate with the devices made by spin coating of inks with the same ligands. A good shelf life-time of these inks manifests itself in the comparatively high photovoltaic efficiency of 5.8% obtained with inks stored for more than 120 days.

Toward printable solar cells based on PbX colloidal quantum dot inks

Lead chalcogenide (PbX, X = S, Se) colloidal quantum dots (CQDs) are promising solution-processed semiconductor materials for the construction of low-cost, large-area, and flexible solar cells. The properties of CQDs endow them with advantages in semi-conducting film deposition compared to other solution-processed photovoltaic materials, which is critical for the fabrication of efficient large-area solar cells towards industrialization. However, the development of large-area CQD solar cells is impeded by the conventional solid-state ligand exchange process, where the tedious processing with high expense is indispensable to facilitate charge transport of CQD films for photovoltaic applications. In the past several years, the rapid development of CQD inks has boosted the device performance and dramatically simplified the fabrication process. The CQD inks are compatible with most of the industrialized printing techniques, demonstrating potential in fabricating solar modules for commercialization. This article aims to review the recent advances in solar cells based on PbX CQD inks, including both lab-scale and large-area photovoltaic devices prepared from solution-phase ligand exchange (SPLE) as well as the recently invented "one-step" synthesis. We expect to draw attention to the enormous potential of CQD inks for developing high-efficiency and low-cost large-area photovoltaics.

PbS Colloidal Quantum Dot Inks for Infrared Solar Cells

Infrared PbS colloidal quantum dot (CQD)-based materials receive significant attention because of its unique properties. The PbS CQD ink that originates from ligand exchange of CQDs is highly potential for efficient and stable infrared CQD solar cells (CQDSCs) using low-temperature solution-phase processing. In this review, we present a comprehensive overview of CQD inks for the development of efficient infrared solar cells, which can effectively harvest the photons from the infrared wavelength region of the solar spectrum, including the importance of infrared absorbers for solar cells, the unique properties of CQDs, ligand-exchange determined CQD inks, and related photovoltaic performance of CQDSCs. Finally, we present a brief conclusion, and the possible challenges and opportunities of the CQD inks are discussed in-depth to further develop highly efficient and stable infrared solar cells.

In situ Grazing-Incidence Small-Angle X-ray Scattering Observation of Gold Sputter Deposition on a PbS Quantum Dot Solid

For PbS quantum dot (QD)-based optoelectronic devices, gold is the most frequently used electrode material. In most device architectures, gold is in direct contact with the QD solid. To better understand the formation of the interface between gold and a close-packed QD layer at an early stage, in situ grazing-incidence small-angle X-ray scattering is used to observe the gold sputter deposition on a 1,2-ethanedithiol (EDT)-treated PbS QD solid. In the kinetics of gold layer growth, the forming and merging of small gold clusters (radius less than 1.6 nm) are observed at the early stages. The thereby formed medium gold clusters (radius between 1.9-2.4 nm) are influenced by the QDs' templating effect. Furthermore, simulations suggest that the medium gold clusters grow preferably along the QDs' boundaries rather than as a top coating of the QDs. When the thickness of the sputtered gold layer reaches 6.25 nm, larger gold clusters with a radius of 5.3 nm form. Simultaneously, a percolation layer with a thickness of 2.5 nm is established underneath the gold clusters. This fundamental understanding of the QD-gold interface formation will help to control the implementation of sputtered gold electrodes on close-packed QD solids in device manufacturing processes.

Taming the Coffee Ring Effect: Enhanced Thermal Control as a Method for Thin-Film Nanopatterning

Predicting and controlling a droplet's behavior on surfaces is very complex due to several factors affecting its nature. These factors play a crucial role in colloidal material deposition and related solution-based manufacturing methods such as printing. A better understanding of the processes governing the droplet in the picoliter regime is needed to help develop novel thin-film manufacturing methods and improve the current ones. This study introduces the substrate temperature as a method to control the droplet's behavior during inkjet printing, especially the coffee-ring phenomena, at an unprecedented temperature range (25-250 °C). To explain the particular behavior of the droplet, this research associates the creation of specific coffee-ring micro/nanostructures at elevated temperatures with the Leidenfrost effect that is responsible for creating a vapor pocket under the drying drop. Herein, we combine experimental data and numerical methods to explain the drying dynamic of the picoliter-size droplet on the substrate at elevated temperatures. The achieved results indicate that the coffee-ring effect is correlated with the heat-transfer changes caused by the Leidenfrost effect and can be controlled and used to produce micro/nanostructured thin films without additional processing steps.

Inkjet-Printing Technology for Supercapacitor Application: Current State and Perspectives

Inkjet-printing (IJP) technology is recognized as a significant breakthrough in manufacturing high-performance electrochemical energy storage systems. In comparison to conventional fabrication protocols, this printing technique offers various advantages, such as contact-less high-resolution patterning capability; low-cost, controlled material deposition; process simplicity; and compatibility with a variety of substrates. Due to these outstanding merits, significant research efforts have been devoted to utilizing IJP technology in developing electrochemical energy storage devices, particularly in supercapacitors (SCs). These attempts have focused on fabricating the key components of SCs, including electrode, electrolyte, and current collector, through rational formulation and patterning of functional inks. In an attempt to further expand the material design strategy and accelerate technology development, it is urgent and essential to obtain an in-depth insight into the recent developments of inkjet-printed SCs. Toward this aim, first, a general introduction to the fundamental principles of IJP technology is provided. After that, the latest achievements in IJP of capacitive energy storage devices are systematically summarized and discussed with a particular emphasis on the design of printable functional materials, the printing process, and capacitive performance of inkjet-printed SCs. To close, existing challenges and future research trends for developing state-of-the-art inkjet-printed SCs are proposed.

Colloidal PbS quantum dot stacking kinetics during deposition via printing

Colloidal PbS quantum dots (QDs) are attractive for solution-processed thin-film optoelectronic applications. In particular, directly achieving QD thin-films by printing is a very promising method for low-cost and large-scale fabrication. The kinetics of QD particles during the deposition process play an important role in the QD film quality and their respective optoelectronic performance. In this work, the particle self-organization behavior of small-sized QDs with an average diameter of 2.88 ± 0.36 nm is investigated for the first time in situ during printing by grazing-incidence small-angle X-ray scattering (GISAXS). The time-dependent changes in peak intensities suggest that the structure formation and phase transition of QD films happen within 30 seconds. The stacking of QDs is initialized by a templating effect, and a face-centered cubic (FCC) film forms in which a superlattice distortion is also found. A body-centered cubic nested FCC stacking is the final QD assembly layout. The small size of the inorganic QDs and the ligand collapse during the solvent evaporation can well explain this stacking behavior. These results provide important fundamental understanding of structure formation of small-sized QD based films prepared via large-scale deposition with printing with a slot die coater.

PbE (E = S, Se) Colloidal Quantum Dot-Layered 2D Material Hybrid Photodetectors

Hybrid lead chalcogenide (PbE) (E = S, Se) quantum dot (QD)-layered 2D systems are an emerging class of photodetectors with unique potential to expand the range of current technologies and easily integrate into current complementary metal-oxide-semiconductor (CMOS)-compatible architectures. Herein, we review recent advancements in hybrid PbE QD-layered 2D photodetectors and place them in the context of key findings from studies of charge transport in layered 2D materials and QD films that provide lessons to be applied to the hybrid system. Photodetectors utilizing a range of layered 2D materials including graphene and transition metal dichalcogenides sensitized with PbE QDs in various device architectures are presented. Figures of merit such as responsivity (R) and detectivity (D*) are reviewed for a multitude of devices in order to compare detector performance. Finally, a look to the future considers possible avenues for future device development, including potential new materials and device treatment/fabrication options.

Enabling Free-Standing 3D Hydrogel Microstructures with Microreactive Inkjet Printing

Reactive inkjet printing holds great prospect as a multimaterial fabrication process because of its unique advantages involving customization, miniaturization, and precise control of droplets for patterning. For inkjet printing of hydrogel structures, a hydrogel precursor (or cross-linker) is printed onto a cross-linker (or precursor) bath or a substrate. However, the progress of patterning and design of intricate hydrogel structures using the inkjet printing technique is limited by the erratic interplay between gelation and motion control. Accordingly, microreactive inkjet printing (MRIJP) was applied to demonstrate a spontaneous 3D printing of hydrogel microstructures by using alginate as the model system. In addition, a printable window within the capillary number-Weber number for the MRIJP technique demonstrated the importance of velocity to realization of in-air binary droplet collision. Finally, systematic analysis shows that the structure and diffusion coefficient of hydrogels are important factors that affect the shape of printed hydrogels over time. Based on such a fundamental understanding of MRIJP of hydrogels, the fabrication process and the structure of hydrogels can be controlled and adapt for 2D/3D microstructure printing of any low-viscosity (<40 cP) reactive inks, with a representative tissue-mimicking structure of a ∼200 μm diameter hollow tube presented in this work.