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Lee YJ, Kim Y, Gim H, Hong K, Jang HW. Nanoelectronics Using Metal-Insulator Transition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305353. [PMID: 37594405 DOI: 10.1002/adma.202305353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 08/02/2023] [Indexed: 08/19/2023]
Abstract
Metal-insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive change in Mott insulators has attracted tremendous interest for investigation into next-generation electronic and optoelectronic devices, as well as a fundamental understanding of condensed matter systems. Although the mechanism of MIT in Mott insulators is still controversial, great efforts have been made to understand and modulate MIT behavior for various electronic and optoelectronic applications. In this review, recent progress in the field of nanoelectronics utilizing MIT is highlighted. A brief introduction to the physics of MIT and its underlying mechanisms is begun. After discussing the MIT behaviors of various Mott insulators, recent advances in the design and fabrication of nanoelectronics devices based on MIT, including memories, gas sensors, photodetectors, logic circuits, and artificial neural networks are described. Finally, an outlook on the development and future applications of nanoelectronics utilizing MIT is provided. This review can serve as an overview and a comprehensive understanding of the design of MIT-based nanoelectronics for future electronic and optoelectronic devices.
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Affiliation(s)
- Yoon Jung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Youngmin Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hyeongyu Gim
- Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Kootak Hong
- Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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Lin W, Tang C, Wang F, Zhu Y, Wang Z, Li Y, Wu Q, Lei S, Zhang Y, Hou J. Building Low-Cost, High-Performance Flexible Photodetector Based on Tetragonal Phase VO 2 (A) Nanorod Networks. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6688. [PMID: 37895670 PMCID: PMC10607982 DOI: 10.3390/ma16206688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 09/30/2023] [Accepted: 10/10/2023] [Indexed: 10/29/2023]
Abstract
We present a straightforward and cost-effective method for the fabrication of flexible photodetectors, utilizing tetragonal phase VO2 (A) nanorod (NR) networks. The devices exhibit exceptional photosensitivity, reproducibility, and stability in ambient conditions. With a 2.0 V bias voltage, the device demonstrates a photocurrent switching gain of 1982% and 282% under irradiation with light at wavelengths of 532 nm and 980 nm, respectively. The devices show a fast photoelectric response with rise times of 1.8 s and 1.9 s and decay times of 1.2 s and 1.7 s for light at wavelengths of 532 nm and 980 nm, respectively. In addition, the device demonstrates exceptional flexibility across large-angle bending and maintains excellent mechanical stability, even after undergoing numerous extreme bending cycles. We discuss the electron transport process within the nanorod networks, and propose a mechanism for the modulation of the barrier height induced by light. These characteristics reveal that the fabricated devices hold the potential to serve as a high-performance flexible photodetector.
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Affiliation(s)
- Wenhui Lin
- Department of Physics, School of Physical and Mathematical Science, Nanjing Tech University, Nanjing 211816, China; (W.L.); (C.T.); (F.W.); (Y.Z.); (Z.W.); (Y.L.); (Q.W.); (S.L.)
| | - Chaoyang Tang
- Department of Physics, School of Physical and Mathematical Science, Nanjing Tech University, Nanjing 211816, China; (W.L.); (C.T.); (F.W.); (Y.Z.); (Z.W.); (Y.L.); (Q.W.); (S.L.)
| | - Feiyu Wang
- Department of Physics, School of Physical and Mathematical Science, Nanjing Tech University, Nanjing 211816, China; (W.L.); (C.T.); (F.W.); (Y.Z.); (Z.W.); (Y.L.); (Q.W.); (S.L.)
| | - Yiyu Zhu
- Department of Physics, School of Physical and Mathematical Science, Nanjing Tech University, Nanjing 211816, China; (W.L.); (C.T.); (F.W.); (Y.Z.); (Z.W.); (Y.L.); (Q.W.); (S.L.)
| | - Zhen Wang
- Department of Physics, School of Physical and Mathematical Science, Nanjing Tech University, Nanjing 211816, China; (W.L.); (C.T.); (F.W.); (Y.Z.); (Z.W.); (Y.L.); (Q.W.); (S.L.)
| | - Yifan Li
- Department of Physics, School of Physical and Mathematical Science, Nanjing Tech University, Nanjing 211816, China; (W.L.); (C.T.); (F.W.); (Y.Z.); (Z.W.); (Y.L.); (Q.W.); (S.L.)
| | - Qiuqi Wu
- Department of Physics, School of Physical and Mathematical Science, Nanjing Tech University, Nanjing 211816, China; (W.L.); (C.T.); (F.W.); (Y.Z.); (Z.W.); (Y.L.); (Q.W.); (S.L.)
| | - Shuguo Lei
- Department of Physics, School of Physical and Mathematical Science, Nanjing Tech University, Nanjing 211816, China; (W.L.); (C.T.); (F.W.); (Y.Z.); (Z.W.); (Y.L.); (Q.W.); (S.L.)
| | - Yi Zhang
- School of Energy Science and Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Jiwei Hou
- Department of Physics, School of Physical and Mathematical Science, Nanjing Tech University, Nanjing 211816, China; (W.L.); (C.T.); (F.W.); (Y.Z.); (Z.W.); (Y.L.); (Q.W.); (S.L.)
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Yoon J, Hong WK, Kim Y, Park SY. Nanostructured Vanadium Dioxide Materials for Optical Sensing Applications. SENSORS (BASEL, SWITZERLAND) 2023; 23:6715. [PMID: 37571499 PMCID: PMC10422301 DOI: 10.3390/s23156715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/21/2023] [Accepted: 07/23/2023] [Indexed: 08/13/2023]
Abstract
Vanadium dioxide (VO2) is one of the strongly correlated materials exhibiting a reversible insulator-metal phase transition accompanied by a structural transition from a low-temperature monoclinic phase to high-temperature rutile phase near room temperature. Due to the dramatic change in electrical resistance and optical transmittance of VO2, it has attracted considerable attention towards the electronic and optical device applications, such as switching devices, memory devices, memristors, smart windows, sensors, actuators, etc. The present review provides an overview of several methods for the synthesis of nanostructured VO2, such as solution-based chemical approaches (sol-gel process and hydrothermal synthesis) and gas or vapor phase synthesis techniques (pulsed laser deposition, sputtering method, and chemical vapor deposition). This review also presents stoichiometry, strain, and doping engineering as modulation strategies of physical properties for nanostructured VO2. In particular, this review describes ultraviolet-visible-near infrared photodetectors, optical switches, and color modulators as optical sensing applications associated with nanostructured VO2 materials. Finally, current research trends and perspectives are also discussed.
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Affiliation(s)
- Jongwon Yoon
- Department of Energy & Electronic Materials, Surface & Nano Materials Division, Korea Institute of Materials Science, Changwon 51508, Republic of Korea;
| | - Woong-Ki Hong
- Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, Republic of Korea;
| | - Yonghun Kim
- Department of Energy & Electronic Materials, Surface & Nano Materials Division, Korea Institute of Materials Science, Changwon 51508, Republic of Korea;
| | - Seung-Young Park
- Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, Republic of Korea;
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Wang Z, Ji X, Dong N, Chen C, Yan Z, Cao X, Wang J. Femtosecond laser-induced phase transition in VO 2 films. OPTICS EXPRESS 2022; 30:47421-47429. [PMID: 36558670 DOI: 10.1364/oe.477910] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Accepted: 11/28/2022] [Indexed: 06/17/2023]
Abstract
VO2 is a very promising material due to its semiconductor-metal phase transition, however, the research on fs laser-induced phase transition is still very controversial, which greatly limits its development in ultrafast optics. In this work, the fs laser-induced changes in the optical properties of VO2 films were studied with a variable-temperature Z-scan. At room temperature, VO2 consistently maintained nonlinear absorption properties at laser repetition frequencies below 10 kHz while laser-induced phase transition properties appeared at higher repetition frequencies. It was found by temperature variation experiments at 100 kHz that the modulation depth of the laser-induced VO2 phase transition was consistent with that of the ambient temperature-induced phase transition, which was increased linearly with thickness, further confirming that the phase transition was caused by the accumulation of thermal effects of a high-repetition-frequency laser. The phase transition process is reversible and causes substantial changes in optical properties of the film, which holds significant promise for all-optical switches and related applications.
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Basyooni MA, Zaki SE, Alfryyan N, Tihtih M, Eker YR, Attia GF, Yılmaz M, Ateş Ş, Shaban M. Nanostructured MoS 2 and WS 2 Photoresponses under Gas Stimuli. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3585. [PMID: 36296777 PMCID: PMC9607979 DOI: 10.3390/nano12203585] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 09/27/2022] [Accepted: 09/30/2022] [Indexed: 06/16/2023]
Abstract
This study was on the optoelectronic properties of multilayered two-dimensional MoS2 and WS2 materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO2, and O2 environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS2 (n-type)/Si (p-type) and WS2 (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 105 cm-2 for WS2 thin film. The IV electrical results revealed that WS2 is more reactive than MoS2 film under different gas stimuli. WS2 film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 102 cm2/V. WS2 film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO2 environment was observed. Additionally, the external quantum efficiency of WS2 revealed a remarkable enhancement in the CO2 environment of 1.62 × 108 compared to MoS2 film with 6.74 × 106. According to our findings, the presence of CO2 on the surface of WS2 improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS2 as a photodetector under gas stimuli for future optoelectronic applications.
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Affiliation(s)
- Mohamed A. Basyooni
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
- Department of Nanoscience and Nanoengineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya 42060, Turkey
| | - Shrouk E. Zaki
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
- Theoretical Physics Department, National Research Center, Cairo 12622, Egypt
| | - Nada Alfryyan
- Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia
| | - Mohammed Tihtih
- Institute of Ceramics and Polymer Engineering, University of Miskolc, H-3515 Miskolc, Hungary
| | - Yasin Ramazan Eker
- Department of Metallurgy and Material Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University, Konya 42060, Turkey
| | - Gamal F. Attia
- Department of Solar and Space Research, National Research Institute of Astronomy and Geophysics (NRIAG), Cairo 11421, Egypt
| | - Mücahit Yılmaz
- Department of Nanoscience and Nanoengineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya 42060, Turkey
| | - Şule Ateş
- Department of Physics, Faculty of Science, Selçuk University, Konya 42075, Turkey
| | - Mohamed Shaban
- Department of Physics, Faculty of Science, Islamic University of Madinah, P.O. Box 170, AlMadinah Almonawara 42351, Saudi Arabia
- Nanophotonics and Applications Laboratory, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt
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Kucheriv OI, Grygoruk VI, Oliynyk VV, Zagorodnii VV, Launets VL, Rotaru A, Gural'skiy IA. A Vanadium Dioxide‐PMMA Composite For Microwave Radiation Switching. Chempluschem 2022; 87:e202200107. [DOI: 10.1002/cplu.202200107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Revised: 05/17/2022] [Indexed: 11/06/2022]
Affiliation(s)
- Olesia I. Kucheriv
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Department of Chemistry UKRAINE
| | - Valery I. Grygoruk
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Viktor V. Oliynyk
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Volodymyr V. Zagorodnii
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Vilen L. Launets
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Institute of High Technologies UKRAINE
| | - Aurelian Rotaru
- University of Suceava: Universitatea Stefan cel Mare din Suceava Faculty of Electrical Engineering and Computer Science & Research Center MANSiD UKRAINE
| | - Il'ya A. Gural'skiy
- Taras Shevchenko National University of Kyiv: Kiivs'kij nacional'nij universitet imeni Tarasa Sevcenka Department of Chemistry 64 Volodymyrska St. 01601 Kyiv UKRAINE
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Rezaei M, Bianconi S, Lauhon LJ, Mohseni H. A New Approach to Designing High-Sensitivity Low-Dimensional Photodetectors. NANO LETTERS 2021; 21:9838-9844. [PMID: 34793679 DOI: 10.1021/acs.nanolett.1c03665] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Photodetectors fabricated from low-dimensional materials such as quantum dots, nanowires, and two-dimensional materials show tremendous promise based on reports of very high responsivities. However, it is not generally appreciated that maximizing the internal gain may compromise the detector performance at low light levels, reducing its sensitivity. Here, we show that for most low-dimensional photodetectors with internal gain the sensitivity is determined by the junction capacitance. Thanks to their extremely small junction capacitances and reduced charge screening, low-dimensional materials and devices provide clear advantages over bulk semiconductors in the pursuit of high-sensitivity photodetectors. This mini-review describes and validates a method to estimate the capacitance from external photoresponse measurements, providing a straightforward approach to extract the device sensitivity and benchmark against physical limits. This improved physical understanding can guide the design of low-dimensional photodetectors to effectively leverage their unique advantage and achieve sensitivities that can exceed that of the best existing photodetectors.
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Affiliation(s)
- Mohsen Rezaei
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Simone Bianconi
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Material Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Hooman Mohseni
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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Guo X, Tan Y, Hu Y, Zafar Z, Liu J, Zou J. High quality VO 2 thin films synthesized from V 2O 5 powder for sensitive near-infrared detection. Sci Rep 2021; 11:21749. [PMID: 34741070 PMCID: PMC8571292 DOI: 10.1038/s41598-021-01025-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Accepted: 10/14/2021] [Indexed: 11/29/2022] Open
Abstract
Vapor transport method has been successfully used to synthesize high quality VO2 thin films on SiO2/Si substrate using V2O5 as a precursor in an inert-gas environment. The morphological and structural evolutions of the intermediate phases during the nucleation and growth processes were investigated by SEM and Raman spectroscopy, respectively. The results showed that the conversion of V2O5 powder to VO2 thin films was dominated by a melting-evaporation-nucleation-growth mechanism. Further characterization results demonstrated that the high quality crystals of monoclinic VO2 thin films exhibit a sharp resistance change up to 4 orders of magnitude. In addition, the VO2 thin films exhibited good near-infrared response, high stability, and reproducibility under ambient conditions, which should be promising for sensitive near-infrared detection. Our work not only provided a simple and direct approach to synthesize high quality VO2 thin films with distinct phase transition properties but also demonstrated the possible infrared sensing application in the future.
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Affiliation(s)
- Xitao Guo
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, China. .,Engineering Research Center of Nuclear Technology Application, East China University of Technology, Ministry of Education, Nanchang, 330013, China.
| | - Yonghao Tan
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, China
| | - Yupei Hu
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, China
| | - Zainab Zafar
- National Centre for Physics, Islamabad, 44000, Pakistan
| | - Jun Liu
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, China
| | - Jijun Zou
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, China. .,Engineering Research Center of Nuclear Technology Application, East China University of Technology, Ministry of Education, Nanchang, 330013, China.
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Construction of Schottky contact by modification with Pt particles to enhance the performance of ultra-long V 2O 5 nanobelt photodetectors. J Colloid Interface Sci 2021; 607:1919-1927. [PMID: 34695740 DOI: 10.1016/j.jcis.2021.08.216] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 08/29/2021] [Accepted: 08/30/2021] [Indexed: 11/22/2022]
Abstract
Schottky-contacted nanosensors have attracted extensive attention due to their high sensitivity and fast response time. In this article, we proved that the construction of Schottky contact by Pt nanoparticles (NPs) decoration can effectively improve the performance of V2O5 nanobelts photodetectors. After modified by Pt NPs, the photocurrent of V2O5 nanobelts is increased by more than two orders of magnitude, and the photoresponse speed is improved by at least three orders of magnitude. Detailed studies have shown that the performance enhancement is attributed to the formation of the Schottky contact at the electrode-semiconductor interface due to the decrease of surface gas adsorption and the increase of V2O5 work function after Pt NPs modification. The strong built-in field in the Schottky barrier region will quickly separate photogenerated carriers, thereby reducing the electron-hole recombination rate, resulting in the fast response time and an increase in the free carrier density. Moreover, it is found that this enhancement effect can be regulated by controlling the pressure to modulating the Schottky barrier height at the interface. Overall, the Pt NPs-modified V2O5 nanobelts photodetector exhibits a broad response spectrum (visible to near infrared), fast rise/fall response time (less than 6.12/6.15 ms), high responsivity (5.6 A/W), and high specific detectivity (6.9 × 108 Jones). This study demonstrates the feasibility of building a Schottky barrier to enhance the photodetection performance, which provides a general and effective strategy towards the construction and its practical application of supersensitive and fast-response nanosensors.
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Wang Z, Lin R, Qu D, Cui X, Tian P. Ultrafast machine vision with artificial neural network devices based on a GaN-based micro-LED array. OPTICS EXPRESS 2021; 29:31963-31973. [PMID: 34615277 DOI: 10.1364/oe.436227] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2021] [Accepted: 09/07/2021] [Indexed: 06/13/2023]
Abstract
GaN-based micro-LED is an emerging display and communication device, which can work as well as a photodetector, enabling possible applications in machine vision. In this work, we measured the characteristics of micro-LED based photodetector experimentally and proposed a feasible simulation of a novel artificial neural network (ANN) device for the first time based on a micro-LED based photodetector array, providing ultrafast imaging (∼133 million bins per second) and a high image recognition rate. The array itself constitutes a neural network, in which the synaptic weights are tunable by the bias voltage. It has the potentials to be integrated with novel machine vision and reconfigurable computing applications, acting as a role of acceleration and similar functionality expansion. Also, the multi-functionality of micro-LED broadens its application potentials of combining ANN with display and communication.
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Zhang Y, Xiong W, Chen W, Zheng Y. Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives. NANOMATERIALS 2021; 11:nano11020338. [PMID: 33525597 PMCID: PMC7911400 DOI: 10.3390/nano11020338] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2020] [Revised: 01/19/2021] [Accepted: 01/20/2021] [Indexed: 01/24/2023]
Abstract
Vanadium dioxide (VO2) is a typical metal-insulator transition (MIT) material, which changes from room-temperature monoclinic insulating phase to high-temperature rutile metallic phase. The phase transition of VO2 is accompanied by sudden changes in conductance and optical transmittance. Due to the excellent phase transition characteristics of VO2, it has been widely studied in the applications of electric and optical devices, smart windows, sensors, actuators, etc. In this review, we provide a summary about several phases of VO2 and their corresponding structural features, the typical fabrication methods of VO2 nanostructures (e.g., thin film and low-dimensional structures (LDSs)) and the properties and related applications of VO2. In addition, the challenges and opportunities for VO2 in future studies and applications are also discussed.
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Affiliation(s)
- Yanqing Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weiming Xiong
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (W.X.); (Y.Z.)
| | - Weijin Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China
| | - Yue Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China; (Y.Z.); (W.C.)
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (W.X.); (Y.Z.)
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12
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Basyooni MA, Zaki SE, Shaban M, Eker YR, Yilmaz M. Efficient MoWO 3/VO 2/MoS 2/Si UV Schottky photodetectors; MoS 2 optimization and monoclinic VO 2 surface modifications. Sci Rep 2020; 10:15926. [PMID: 32985575 PMCID: PMC7522211 DOI: 10.1038/s41598-020-72990-9] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/26/2020] [Accepted: 09/09/2020] [Indexed: 11/21/2022] Open
Abstract
The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS2) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO2. MoWO3/VO2/MoS2 photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO3/VO2/MoS2/Si with MoS2 deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO2 layer on MoS2/Si causes a redshift and intensive MoS2 Raman peaks. Interestingly, the incorporation of VO2 dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO2/(30 s)MoS2/Si from < 1 to > 1. By increasing the deposition time of MoS2 from 60 to 180 s, the relative intensity of the B-exciton/A-exciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO2/(60 s)MoS2/Si structure. Both the VO2/(60 s)MoS2/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS2/Si structure. The MoWO3/VO2/(60 s)MoS2/Si photodetector displays the highest photocurrent gain of 1.6, 4.32 × 108 Jones detectivity, and ~ 1.0 × 1010 quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at ~ 40 °C.
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Affiliation(s)
- Mohamed A Basyooni
- Nanophysics Laboratory, Department of NanoScience and NanoEngineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya, 42060, Turkey
- Science and Technology Research and Application Center (BITAM), University of Necmettin Erbakan, Konya, 42060, Turkey
| | - Shrouk E Zaki
- Nanophysics Laboratory, Department of NanoScience and NanoEngineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya, 42060, Turkey
| | - Mohamed Shaban
- Nanophotonics and Applications Laboratory, Department of Physics, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt.
- Department of Physics, Faculty of Science, Islamic University in Almadinah Almonawara, Almadinah Almonawara, 42351, Saudi Arabia.
| | - Yasin Ramazan Eker
- Department of Metallurgy and Material Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University, Konya, 42060, Turkey
- Science and Technology Research and Application Center (BITAM), University of Necmettin Erbakan, Konya, 42060, Turkey
| | - Mucahit Yilmaz
- Nanophysics Laboratory, Department of NanoScience and NanoEngineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya, 42060, Turkey
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13
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Zhou M, Wu B, Zhang X, Cao S, Ma P, Wang K, Fan Z, Su M. Preparation and UV Photoelectric Properties of Aligned ZnO-TiO 2 and TiO 2-ZnO Core-Shell Structured Heterojunction Nanotubes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:38490-38498. [PMID: 32846492 DOI: 10.1021/acsami.0c03550] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Large-area horizontal-aligned ZnO nanotubes (ZNTs), TiO2 nanotubes (TNTs), TiO2-ZnO core-shell nanotubes (TZNTs) and ZnO-TiO2 core-shell nanotubes (ZTNTs) were successfully synthesized by electrospinning combined with pulsed-laser deposition. The morphology, structure, and composition of the samples were characterized by scanning electron microscopy, high-resolution transmission electron microscopy, and Raman spectroscopy. The photoluminescence (PL) spectra of these samples indicate that the addition of a TiO2 layer greatly decreases the recombination of photogenerated carriers in the heterojunction nanotubes. The photodetectors (PDs) were fabricated by assembling horizontally ordered nanotubes on the gold interdigital electrode, and their ultraviolet (UV) detection performances were compared. The test results at room temperature show that the PD with aligned ZTNTs have the best UV response and a short response recovery time. In addition, the performance of ZTNT PDs and TZNT PDs are further improved under heating. The photo/dark current ratio, responsivity (Rλ), detectivity (D*), and external quantum efficiency (EQE) of ZTNTs increased to 388, 450 uA·W-1, 1.1 × 1010 cm·Hz1/2·W-1, and 0.15%, respectively, under the condition of 365 nm UV radiation with a power density of 4.9 mW·cm-2 and a 1 V bias at 90 °C. The UV response mechanism and structural superiority of the horizontally ordered coaxial heteronanotube were also discussed. In addition, this work provides an important method for the design of other ordered nanomaterials and structures, which have a wide range of applications in the fields of sensors, transistors, transparent flexible electrodes, and other multifunctional devices.
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Affiliation(s)
- Ming Zhou
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Bozhi Wu
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xueting Zhang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Shiquan Cao
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Pengpeng Ma
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Kaiping Wang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Zhengpeng Fan
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Maogen Su
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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14
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Wang Y, Cheng J, Shahid M, Xing Y, Hu Y, Li T, Zhang M, Nishijima H, Pan W. High photosensitivity and external quantum efficiency photosensors achieved by a cable like nanoarchitecture. NANOTECHNOLOGY 2020; 31:015601. [PMID: 31530767 DOI: 10.1088/1361-6528/ab450c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The poor intrinsic flexibility of semiconducting ceramic materials hinders their applications in wearable electronics. Here, we present a highly efficient photosensor with extreme levels of bending and repeatable resilience based on cable-like structure. The ZnO@TiO2 cable-like photosensor demonstrates an ultra-high external quantum efficiency (2.82 × 106%) and photosensitivity (1.27 × 105) upon UV light illumination at 254 nm, and a stability of 85% at the small curvature radius of 0.5 mm. Moreover, the ZnO@TiO2 photodetector demonstrates extremely stable flexibility over 1000 bending cycles. This specific nanoscale architecture has future potential applications for soft integrated electronics.
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Affiliation(s)
- Yuting Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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15
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Hong KT, Moon CW, Suh JM, Lee TH, Kim SI, Lee S, Jang HW. Daylight-Induced Metal-Insulator Transition in Ag-Decorated Vanadium Dioxide Nanorod Arrays. ACS APPLIED MATERIALS & INTERFACES 2019; 11:11568-11578. [PMID: 30834745 DOI: 10.1021/acsami.8b19490] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Metal-insulator transition (MIT) in strongly correlated electronic materials has enormous potential with scientific and technological impacts in future oxide nanoelectronic devices. Although photo-induced MIT can provide opportunities to extend the novel functionality of strongly correlated electronic materials, there have rarely been reports on it. Here, we report MIT provoked by visible-near-infrared light in Ag-decorated VO2 nanorod arrays (NRs) because of localized surface plasmon resonance (LSPR) and its application to broadband photodetectors. Our simulation results based on the finite-difference time-domain method show that the electric field resulting from LSPR can be generated at the interface between Ag nanoparticles and VO2 layers under vis NIR illumination. Using high-resolution transmission electronic microscopy and Raman spectroscopy, we observe the MIT and structural phase transition in the Ag-decorated VO2 NRs due to the LSPR effect. The optoelectronic measurements confirm that high, fast, and broad photoresponse of Ag-decorated VO2 NRs is attributed to photo-induced MIT due to LSPR. Our study will open up a new strategy to trigger MIT in strongly correlated electronic materials through functionalization with plasmonic nanoparticles and serve as a valuable proof of concept for next-generation optoelectronic devices with fast response, low power consumption, and high performance.
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Affiliation(s)
- Koo Tak Hong
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Cheon Woo Moon
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Jun Min Suh
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Tae Hyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Seong-Il Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Sanghan Lee
- School of Materials Science and Engineering , Gwangju Institute of Science and Technology , Gwangju 61005 , Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
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16
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Zhai ZH, Chen SC, Du LH, Zhong SC, Huang W, Li ZR, Schneider H, Shi Q, Zhu LG. Giant impact of self-photothermal on light-induced ultrafast insulator-to-metal transition in VO 2 nanofilms at terahertz frequency. OPTICS EXPRESS 2018; 26:28051-28066. [PMID: 30469861 DOI: 10.1364/oe.26.028051] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2018] [Accepted: 09/30/2018] [Indexed: 06/09/2023]
Abstract
Ultrafast detection and switching of light are key processes in high-speed optoelectronic devices. However, the performances of VO2-based optoelectronics are strongly degraded by photothermal. The mechanism of the latter is still unclear. Here, by using femtosecond-laser (fs-laser) driven kinetic terahertz wave absorption, we quantitatively separate slow photothermal response and ultrafast photodoping response (e.g. light-induced insulator-to-metal transition) from second- to picosecond-timescales, and discover the competing interplay between them. With self-photothermal (mainly determined by fs-laser pulse repetition rate and pump fluence), the ultrafast transition time was degraded by 190% from 50 ps to 95 ps, the ultrafast transition threshold was decreased to 82% from 11mJ/cm2 to 9mJ/cm2, while the amplitudes of the two photoresponse are competing. Percolation theory, along with the macroscopic conductivity response, is used to explain the competing interplay. Our findings are relevant for designing and optimizing VO2-based ultrafast optoelectronic devices.
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17
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Yang Y, Yao Y, Zhang B, Lin H, Luo Z, Gao C, Zhang C, Kang C. Investigating Metal⁻Insulator Transition and Structural Phase Transformation in the (010)-VO₂/(001)-YSZ Epitaxial Thin Films. MATERIALS 2018; 11:ma11091713. [PMID: 30217052 PMCID: PMC6163228 DOI: 10.3390/ma11091713] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/18/2018] [Revised: 09/05/2018] [Accepted: 09/11/2018] [Indexed: 11/16/2022]
Abstract
The VO2 thin films with sharp metal–insulator transition (MIT) were epitaxially grown on (001)-oriented Yttria-stabilized zirconia substrates (YSZ) using radio-frequency (RF) magnetron sputtering techniques. The MIT and structural phase transition (SPT) were comprehensively investigated under in situ temperature conditions. The amplitude of MIT is in the order of magnitude of 104, and critical temperature is 342 K during the heating cycle. It is interesting that both electron concentration and mobility are changed by two orders of magnitude across the MIT. This research is distinctively different from previous studies, which found that the electron concentration solely contributes to the amplitude of the MIT, although the electron mobility does not. Analysis of the SPT showed that the (010)-VO2/(001)-YSZ epitaxial thin film presents a special multi-domain structure, which is probably due to the symmetry matching and lattice mismatch between the VO2 and YSZ substrate. The VO2 film experiences the SPT from the M1 phase at low temperature to a rutile phase at a high temperature. Moreover, the SPT occurs at the same critical temperature as that of the MIT. This work may shed light on a new MIT behavior and may potentially pave the way for preparing high-quality VO2 thin films on cost-effective YSZ substrates for photoelectronic applications.
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Affiliation(s)
- Yuanjun Yang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China.
| | - Yingxue Yao
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China.
| | - Benjian Zhang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China.
| | - Hui Lin
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China.
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China.
| | - Chen Gao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China.
| | - Cong Zhang
- School of Physics and Electronic Information, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Chaoyang Kang
- School of Physics and Electronic Information, Henan Polytechnic University, Jiaozuo 454000, China.
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18
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Ke Y, Wang S, Liu G, Li M, White TJ, Long Y. Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications. SMALL 2018; 14:e1802025. [PMID: 30085392 DOI: 10.1002/smll.201802025] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2018] [Revised: 06/24/2018] [Indexed: 05/12/2023]
Affiliation(s)
- Yujie Ke
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Shancheng Wang
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Guowei Liu
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Ming Li
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Key Laboratory of Materials Physics; Anhui Key Laboratory of Nanomaterials and Nanotechnology; Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031 P. R. China
| | - Timothy J. White
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
| | - Yi Long
- School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798 Singapore
- Singapore-HUJ Alliance for Research and Enterprise (SHARE); Nanomaterials for Energy and Energy-Water Nexus (NEW); Campus for Research Excellence and Technological Enterprise (CREATE); 1 Create Way Singapore 138602 Singapore
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19
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Bolometric photodetection using plasmon-assisted resistivity change in vanadium dioxide. Sci Rep 2018; 8:12764. [PMID: 30143667 PMCID: PMC6109045 DOI: 10.1038/s41598-018-30944-2] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2018] [Accepted: 08/06/2018] [Indexed: 11/08/2022] Open
Abstract
Vanadium oxide is a key sensing material for bolometric photodetection, thanks to its strong temperature dependence of resistivity close to room temperature. Here we demonstrate the photodetection of a stoichiometric vanadium dioxide thin film integrated with silver nanorods. The nanorods convert light into heat, consequently suppressing the resistivity of vanadium dioxide via localised surface plasmon resonance. Incorporation of this thermo-plasmonic effect into bolometric photodetection allows for wavelength and polarisation sensitivity. This work opens the path to a broad family of photodetection functionalities for vanadium dioxide-based microbolometers.
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20
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Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review. SENSORS 2018; 18:s18072072. [PMID: 29958452 PMCID: PMC6068994 DOI: 10.3390/s18072072] [Citation(s) in RCA: 146] [Impact Index Per Article: 24.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/07/2018] [Revised: 06/05/2018] [Accepted: 06/27/2018] [Indexed: 12/25/2022]
Abstract
Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, p-n junction type and p-i-n junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.
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21
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Zheng W, Xu Y, Wang R, Li Y, Xu H, Ma L. Upconversion and Phase Transition Characteristics in Erbium(III)- and Ytterbium(III)-Codoped Vanadium(IV) Oxide. ANAL LETT 2018. [DOI: 10.1080/00032719.2017.1371726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
Affiliation(s)
- Wei Zheng
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, China
| | - Yanling Xu
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, China
| | - Rui Wang
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, China
| | - Yuemei Li
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, China
| | - Huanhuan Xu
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, China
| | - Li Ma
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, China
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22
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Bhuyan PD, Gupta SK, Kumar A, Sonvane Y, Gajjar PN. Highly infrared sensitive VO 2 nanowires for a nano-optical device. Phys Chem Chem Phys 2018; 20:11109-11115. [PMID: 29620776 DOI: 10.1039/c8cp00318a] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
Recent studies on the electronic, magnetic and optical properties of VO2 (vanadium dioxide) materials have motivated the exploration of one dimensional VO2 nanowires. First principles calculations were performed to investigate the structural, electronic, magnetic and optical properties of the monoclinic (M) and rutile (R) phases of VO2 nanowires. The monoclinic phase shows semiconducting behaviour with a band gap of 1.17 eV, whereas the rutile phase of VO2 nanowires behaves as a spin gapless semiconducting material, as band lines cross the Fermi level due only to up spin contribution. The monoclinic structure of VO2 nanowires is found to be paramagnetic and the rutile structure shows ferromagnetic half metal behavior. The conductivity calculation for VO2 nanowires shows the metal-insulator transition (MIT) temperature to be 250 K. The possible mechanism of VO2 nanowires to be used as smart windows has been discussed, as the nanowires are highly sensitive in the infrared (IR) region. Interestingly, at low temperature, the VO2 monoclinic structure allows infrared light to be transmitted, while VO2 with the rutile phase blocks light in the IR region. Furthermore, we adsorbed CO2, N2 and SO2 gas molecules on 1D VO2 monoclinic nanowire to investigate their interaction behaviour. It was observed that the absorption and transmission properties of VO2 dramatically change upon the adsorption of CO2 and SO2 gas molecules, which is likely to open up its application as an optical gas sensor.
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Affiliation(s)
- Prabal Dev Bhuyan
- Computational Materials and Nanoscience Group, Department of Physics and Electronics, St. Xavier's College, Ahmedabad 380009, India.
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23
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Song I, Lee SC, Shang X, Ahn J, Jung HJ, Jeong CU, Kim SW, Yoon W, Yun H, Kwon OP, Oh JH. High-Performance Visible-Blind UV Phototransistors Based on n-Type Naphthalene Diimide Nanomaterials. ACS APPLIED MATERIALS & INTERFACES 2018; 10:11826-11836. [PMID: 29560713 DOI: 10.1021/acsami.8b01500] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
This study investigates the performance of single-crystalline nanomaterials of wide-band gap naphthalene diimide (NDI) derivatives with methylene-bridged aromatic side chains. Such materials are found to be easily used as high-performance, visible-blind near-UV light detectors. NDI single-crystalline nanoribbons are assembled using a simple solution-based process (without solvent-inclusion problems), which is then applied to organic phototransistors (OPTs). Such OPTs exhibit excellent n-channel transistor characteristics, including an average electron mobility of 1.7 cm2 V-1 s-1, sensitive UV detection properties with a detection limit of ∼1 μW cm-2, millisecond-level responses, and detectivity as high as 1015 Jones, demonstrating the highly sensitive organic visible-blind UV detectors. The high performance of our OPTs originates from the large face-to-face π-π stacking area between the NDI semiconducting cores, which is facilitated by methylene-bridged aromatic side chains. Interestingly, NDI-based nanoribbon OPTs exhibit a distinct visible-blind near-UV detection with an identical detection limit, even under intense visible light illumination (for example, 104 times higher intensity than UV light intensity). Our findings demonstrate that wide-band gap NDI-based nanomaterials are highly promising for developing high-performance visible-blind UV photodetectors. Such photodetectors could potentially be used for various applications including environmental and health-monitoring systems.
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Affiliation(s)
- Inho Song
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-ro , Pohang , Gyeongbuk 37673 , South Korea
| | | | - Xiaobo Shang
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-ro , Pohang , Gyeongbuk 37673 , South Korea
| | - Jaeyong Ahn
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-ro , Pohang , Gyeongbuk 37673 , South Korea
| | | | | | | | | | | | | | - Joon Hak Oh
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-ro , Pohang , Gyeongbuk 37673 , South Korea
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24
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Tetsuka H. 2D/0D graphene hybrids for visible-blind flexible UV photodetectors. Sci Rep 2017; 7:5544. [PMID: 28717126 PMCID: PMC5514071 DOI: 10.1038/s41598-017-05981-y] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2017] [Accepted: 06/05/2017] [Indexed: 11/10/2022] Open
Abstract
Nitrogen-functionalized graphene quantum dots (NGQDs) are attractive building blocks for optoelectronic devices because of their exceptional tunable optical absorption and fluorescence properties. Here, we developed a high-performance flexible NGQD/graphene field-effect transistor (NGQD@GFET) hybrid ultraviolet (UV) photodetector, using dimethylamine-functionalized GQDs (NMe2-GQDs) with a large bandgap of ca. 3.3 eV. The NMe2-GQD@GFET photodetector exhibits high photoresponsivity and detectivity of ca. 1.5 × 104 A W–1 and ca. 5.5 × 1011 Jones, respectively, in the deep-UV region as short as 255 nm without application of a backgate voltage. The feasibility of these flexible UV photodetectors for practical application in flame alarms is also demonstrated.
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Affiliation(s)
- Hiroyuki Tetsuka
- Frontier Research-Domain, Toyota Central R&D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi, 480-1192, Japan.
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25
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Guo D, Liu H, Li P, Wu Z, Wang S, Cui C, Li C, Tang W. Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga 2O 3/NSTO Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2017; 9:1619-1628. [PMID: 28006095 DOI: 10.1021/acsami.6b13771] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
A solar-blind photodetector based on β-Ga2O3/NSTO (NSTO = Nb:SrTiO3) heterojunctions were fabricated for the first time, and its photoelectric properties were investigated. The device presents a typical positive rectification in the dark, while under 254 nm UV light illumination, it shows a negative rectification, which might be caused by the generation of photoinduced electron-hole pairs in the β-Ga2O3 film layer. With zero bias, that is, zero power consumption, the photodetector shows a fast photoresponse time (decay time τd = 0.07 s) and the ratio Iphoto/Idark ≈ 20 under 254 nm light illumination with a light intensity of 45 μW/cm2. Such behaviors are attributed to the separation of photogenerated electron-hole pairs driven by the built-in electric field in the depletion region of β-Ga2O3 and the NSTO interface, and the subsequent transport toward corresponding electrodes. The photocurrent increases linearly with increasing the light intensity and applied bias, while the response time decreases with the increase of the light intensity. Under -10 V bias and 45 μW/cm2 of 254 nm light illumination, the photodetector exhibits a responsivity Rλ of 43.31 A/W and an external quantum efficiency of 2.1 × 104 %. The photo-to-electric conversion mechanism in the β-Ga2O3/NSTO heterojunction photodetector is explained in detail by energy band diagrams. The results strongly suggest that a photodetector based on β-Ga2O3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.
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Affiliation(s)
- Daoyou Guo
- Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University , Hangzhou 310018, China
- State Key Laboratory of Information Photonics and Optical Communications & Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, China
| | - Han Liu
- Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University , Hangzhou 310018, China
| | - Peigang Li
- Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University , Hangzhou 310018, China
- State Key Laboratory of Information Photonics and Optical Communications & Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, China
| | - Shunli Wang
- Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University , Hangzhou 310018, China
| | - Can Cui
- Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University , Hangzhou 310018, China
| | - Chaorong Li
- Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University , Hangzhou 310018, China
| | - Weihua Tang
- Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University , Hangzhou 310018, China
- State Key Laboratory of Information Photonics and Optical Communications & Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, China
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Optoelectronic and Electrochemical Properties of Vanadium Pentoxide Nanowires Synthesized by Vapor-Solid Process. NANOMATERIALS 2016; 6:nano6080140. [PMID: 28335268 PMCID: PMC5224621 DOI: 10.3390/nano6080140] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/31/2016] [Revised: 07/11/2016] [Accepted: 07/19/2016] [Indexed: 11/22/2022]
Abstract
Substantial synthetic vanadium pentoxide (V2O5) nanowires were successfully produced by a vapor-solid (VS) method of thermal evaporation without using precursors as nucleation sites for single crystalline V2O5 nanowires with a (110) growth plane. The micromorphology and microstructure of V2O5 nanowires were analyzed by scanning electron microscope (SEM), energy-dispersive X-ray spectroscope (EDS), transmission electron microscope (TEM) and X-ray diffraction (XRD). The spiral growth mechanism of V2O5 nanowires in the VS process is proved by a TEM image. The photo-luminescence (PL) spectrum of V2O5 nanowires shows intrinsic (410 nm and 560 nm) and defect-related (710 nm) emissions, which are ascribable to the bound of inter-band transitions (V 3d conduction band to O 2p valence band). The electrical resistivity could be evaluated as 64.62 Ω·cm via four-point probe method. The potential differences between oxidation peak and reduction peak are 0.861 V and 0.470 V for the first and 10th cycle, respectively.
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27
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Inhibition of unintentional extra carriers by Mn valence change for high insulating devices. Sci Rep 2016; 6:24190. [PMID: 27068227 PMCID: PMC4828704 DOI: 10.1038/srep24190] [Citation(s) in RCA: 41] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/21/2016] [Accepted: 03/22/2016] [Indexed: 11/08/2022] Open
Abstract
For intrinsic oxide semiconductors, oxygen vacancies served as the electron donors have long been, and inevitably still are, attributed as the primary cause of conductivity, making oxide semiconductors seem hard to act as high insulating materials. Meanwhile, the presence of oxygen vacancies often leads to a persistent photoconductivity phenomenon which is not conducive to the practical use in the fast photoelectric response devices. Herein, we propose a possible way to reduce the influence of oxygen vacancies by introducing a valence change doping in the monoclinic β-Ga2O3 epitaxial thin film. The unintentional extra electrons induced by oxygen vacancies can be strongly suppressed by the change valence of the doped Mn ions from +3 to +2. The resistance for the Mn-doped Ga2O3 increases two orders of magnitude in compared with the pure Ga2O3. As a result, photodetector based on Mn-doped Ga2O3 thin films takes on a lower dark current, a higher sensitivity, and a faster photoresponse time, exhibiting a promising candidate using in high performance solar-blind photodetector. The study presents that the intentional doping of Mn may provide a convenient and reliable method of obtaining high insulating thin film in oxide semiconductor for the application of specific device.
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Boruah BD, Misra A. Effect of Magnetic Field on Photoresponse of Cobalt Integrated Zinc Oxide Nanorods. ACS APPLIED MATERIALS & INTERFACES 2016; 8:4771-80. [PMID: 26836062 DOI: 10.1021/acsami.5b11387] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Cobalt integrated zinc oxide nanorod (Co-ZnO NR) array is presented as a novel heterostructure for ultraviolet (UV) photodetector (PD). Defect states in Co-ZnO NRs surface induces an enhancement in photocurrent as compared to pristine ZnO NRs PD. Presented Co-ZnO NRs PD is highly sensitive to external magnetic field that demonstrated 185.7% enhancement in response current. It is concluded that the opposite polarizations of electron and holes in the presence of external magnetic field contribute to effective separation of electron-hole pairs that have drifted upon UV illumination. Moreover, Co-ZnO NRs PD shows a faster photodetection speed (1.2 s response time and 7.4 s recovery time) as compared to the pristine ZnO NRs where the response and recovery times are observed as 38 and 195 s, respectively.
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Affiliation(s)
- Buddha Deka Boruah
- Department of Instrumentation and Applied Physics, Indian Institute of Science , Bangalore, Karnataka, India 560012
| | - Abha Misra
- Department of Instrumentation and Applied Physics, Indian Institute of Science , Bangalore, Karnataka, India 560012
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Boruah BD, Ferry DB, Mukherjee A, Misra A. Few-layer graphene/ZnO nanowires based high performance UV photodetector. NANOTECHNOLOGY 2015; 26:235703. [PMID: 25990574 DOI: 10.1088/0957-4484/26/23/235703] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
A graphene and zinc oxide nanowires (G/ZnO NWs) based ultraviolet (UV) photodetector presents excellent responsivity and photocurrent gain with detectivity. Graphene due to higher charge carrier transport mobility induces faster response to UV illumination at the interface between ZnO and graphene with improved response and decay times as compared to a ZnO NWs device alone. A linear increase is revealed for both the responsivity and photocurrent gain of the G/ZnO NWs device with the applied bias. These results suggest that the G/ZnO NWs device exhibits great promise for highly efficient UV photodetectors.
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Affiliation(s)
- Buddha Deka Boruah
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, Karnataka 560012, India
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Boruah BD, Mukherjee A, Sridhar S, Misra A. Highly Dense ZnO Nanowires Grown on Graphene Foam for Ultraviolet Photodetection. ACS APPLIED MATERIALS & INTERFACES 2015; 7:10606-11. [PMID: 25912766 DOI: 10.1021/acsami.5b02403] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Growth of highly dense ZnO nanowires (ZnO NWs) is demonstrated on three-dimensional graphene foam (GF) using resistive thermal evaporation technique. Photoresponse of the as-grown hybrid structure of ZnO NWs on GF (ZnO NWs/GF) is evaluated for ultraviolet (UV) detection. Excellent photoresponse with fast response and recovery times of 9.5 and 38 s with external quantum efficiency of 2490.8% is demonstrated at low illumination power density of 1.3 mW/cm(2). In addition, due to excellent charge carrier transport, mobility of graphene reduces the recombination rate of photogenerated charge carriers, hence the lifetime of photogenerated free charge carriers enhances in the photodetectors.
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Affiliation(s)
- Buddha Deka Boruah
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, Karnataka, India 560012
| | - Anwesha Mukherjee
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, Karnataka, India 560012
| | - S Sridhar
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, Karnataka, India 560012
| | - Abha Misra
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, Karnataka, India 560012
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Joushaghani A, Jeong J, Paradis S, Alain D, Stewart Aitchison J, Poon JKS. Wavelength-size hybrid Si-VO(2) waveguide electroabsorption optical switches and photodetectors. OPTICS EXPRESS 2015; 23:3657-3668. [PMID: 25836218 DOI: 10.1364/oe.23.003657] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Ultra-compact waveguide electroabsorption optical switches and photodetectors with micron- and sub-micron lengths and compatible with silicon (Si) waveguides are demonstrated using the insulator-metal phase transition of vanadium dioxide (VO(2)). A 1 μm long hybrid Si-VO(2) device is shown to achieve a high extinction ratio of 12 dB and a competitive insertion loss of 5 dB over a broad bandwidth of 100 nm near λ = 1550 nm. The device, operated as a photodetector, can measure optical powers less than 1 μW with a responsivity in excess of 10 A/W. With volumes that are about 100 to 1000 times smaller than today's active Si photonic components, the hybrid Si-VO(2) devices show the feasibility of integrating transition metal oxides on Si photonic platforms for nanoscale electro-optic elements.
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Xue X, Zhou Z, Peng B, Zhu MM, Zhang YJ, Ren W, Ye ZG, Chen X, Liu M. Review on nanomaterials synthesized by vapor transport method: growth and their related applications. RSC Adv 2015. [DOI: 10.1039/c5ra13349a] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Nanostructures with different dimensions, including bulk crystals, thin films, nanowires, nanobelts and nanorods, have received considerable attention due to their novel functionalities and outstanding applications in various areas.
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Affiliation(s)
- X. Xue
- Electronic Materials Research Laboratory
- Key Laboratory of the Ministry of Education & International Center for Dielectric Research
- Xi'an Jiaotong University
- Xi'an 710049, China
| | - Z. Zhou
- Energy Systems Division
- Argonne National Laboratory
- Lemont, USA
| | - B. Peng
- Electronic Materials Research Laboratory
- Key Laboratory of the Ministry of Education & International Center for Dielectric Research
- Xi'an Jiaotong University
- Xi'an 710049, China
| | - M. M. Zhu
- Electronic Materials Research Laboratory
- Key Laboratory of the Ministry of Education & International Center for Dielectric Research
- Xi'an Jiaotong University
- Xi'an 710049, China
| | - Y. J. Zhang
- Electronic Materials Research Laboratory
- Key Laboratory of the Ministry of Education & International Center for Dielectric Research
- Xi'an Jiaotong University
- Xi'an 710049, China
| | - W. Ren
- Electronic Materials Research Laboratory
- Key Laboratory of the Ministry of Education & International Center for Dielectric Research
- Xi'an Jiaotong University
- Xi'an 710049, China
| | - Z. G. Ye
- Electronic Materials Research Laboratory
- Key Laboratory of the Ministry of Education & International Center for Dielectric Research
- Xi'an Jiaotong University
- Xi'an 710049, China
| | - X. Chen
- Energy Systems Division
- Argonne National Laboratory
- Lemont, USA
| | - M. Liu
- Electronic Materials Research Laboratory
- Key Laboratory of the Ministry of Education & International Center for Dielectric Research
- Xi'an Jiaotong University
- Xi'an 710049, China
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