Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds

An organic array of quantum corrals modulated by the gold herringbone electronic superlattice

The periodic herringbone reconstruction on the surface of Au(111) consists of alternating face-centered-cubic (fcc) and hexagonal-closed-packed (hcp) sites separated by dislocation lines and elbows. This well-known arrangement acts as an electronic superlattice for surface-state electrons, creating a mini-gapped band structure with a modulated electronic density. This rich and fascinating geometrical and electronic landscape has countless times served as a platform for molecular self-assembly and on-surface synthesis of carbon-based nanoarchitectures as well as a template for 2D material growth. In this work, we fabricated a long-range ordered organic quantum corral (QC) array via the self-assembly of 1,3,5-benzenetribenzoic acid molecules onto the herringbone reconstructed Au(111) surface. The periodicity of this QC array is nearly half the one of the underlying Au herringbone reconstruction, enabling us to study the delicate interplay between the two potential landscapes by allowing the selective formation and electronic modulation of QCs both on hcp and fcc sites. Scanning tunneling microscopy/spectroscopy (STM/STS) can probe such local differences in the first partially confined state and finds that not only the energy onset of the surface state electrons is influenced but also the modulation of the shallow herringbone potential contributes to the newly formed band structure. This is confirmed by angle-resolved photoemission spectroscopy (ARPES), where the interplay of the periodic potentials introduced by the organic QC array and herringbone reconstruction results in the formation of a distinct surface state band structure. These results are corroborated and intuitively understood with electron-plane-wave expansion (EPWE) simulations. Our work shows that combined molecular and non-organic patterning can serve as a promising tool to macroscopically tune the electronic properties of metal surfaces in a controllable manner.

Pulsed laser in liquid grafting of gold nanoparticle-carbon support composites

We developed a novel pulsed laser-assisted process for the fabrication of advanced composites of nonequilibrium gold nanoparticles on carbon fiber paper supports. Our one-step process integrates the generation of nanoparticles with their surface attachment and solves longstanding nanoparticle adhesion and electrical contact issues. Irradiation of hydrophilic carbon fiber paper submerged in aqueous HAuCl4 solution by nanosecond laser pulses produced composites with uniform distribution of gold nanoparticles on carbon fibers, taking advantage of the high internal surface area of carbon fiber paper. The pulsed laser-grafted composites exhibited zero measurable charge transfer resistance between gold nanoparticles and the carbon support, leading to superior cathode performance over conventionally prepared electrodes for electrocatalytic hydrogen evolution in aqueous bicarbonate reduction.

The Analysis of Electron Densities: From Basics to Emergent Applications

The electron density determines all properties of a system of nuclei and electrons. It is both computable and observable. Its topology allows gaining insight into the mechanisms of bonding and other phenomena in a way that is complementary to and beyond that available from the molecular orbital picture and the formal oxidation state (FOS) formalism. The ability to derive mechanistic insight from electron density is also important with methods where orbitals are not available, such as orbital-free density functional theory (OF-DFT). While density topology-based analyses such as QTAIM (quantum theory of atoms-in-molecules) have been widely used, novel, vector-based techniques recently emerged such as next-generation (NG) QTAIM. Density-dependent quantities are also actively used in machine learning (ML)-based methods, in particular, for ML DFT functional development, including machine-learnt kinetic energy functionals. We review QTAIM and its recent extensions such as NG-QTAIM and localization-delocalization matrices (LDM) and their uses in the analysis of bonding, conformations, mechanisms of redox reactions excitations, as well as ultrafast phenomena. We review recent research showing that direct density analysis can circumvent certain pitfalls of the FOS formalism, in particular in the description of anionic redox, and of the widely used (spherically) projected density of states analysis. We discuss uses of density-based quantities for the construction of DFT functionals and prospects of applications of analyses of density topology to get mechanistic insight with OF-DFT and recently developed time-dependent OF-DFT.

In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III-V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants

One possible pathway toward reducing the cost of III-V solar cells is to remove them from their growth substrate by spalling fracture, and then reuse the substrate for the growth of multiple cells. Here we consider the growth of III-V cells on spalled GaAs(100) substrates, which typically have faceted surfaces after spalling. To facilitate the growth of high-quality cells, these faceted surfaces should be smoothed prior to cell growth. In this study, we show that these surfaces can be smoothed during organometallic vapor-phase epitaxy growth, but the choice of epilayer material and modification of the various surfaces by impurities/dopants greatly impacts whether or not the surface becomes smooth, and how rapidly the smoothing occurs. Representative examples are presented along with a discussion of the underlying growth processes. Although this work was motivated by solar cell growth, the methods are generally applicable to the growth of any III-V device on a nonplanar substrate.

Bridging the gap between surface physics and photonics

Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.

Surface Reconstructions in II-VI Quantum Dots

Although density functional theory (DFT) calculations have been crucial in our understanding of colloidal quantum dots (QDs), simulations are commonly carried out on QD models that are significantly smaller than those generally found experimentally. While smaller models allow for efficient study of local surface configurations, increasing the size of the QD model will increase the size or number of facets, which can in turn influence the energetics and characteristics of trap formation. Moreover, core-shell structures can only be studied with QD models that are large enough to accommodate the different layers with the correct thickness. Here, we use DFT calculations to study the electronic properties of QDs as a function of size, up to a diameter of ∼4.5 nm. We show that increasing the size of QD models traditionally used in DFT studies leads to a disappearance of the band gap and localization of the HOMO and LUMO levels on facet-specific regions of the QD surface. We attribute this to the lateral coupling of surface orbitals and the formation of surface bands. The introduction of surface vacancies and their a posteriori refilling with Z-type ligands leads to surface reconstructions that widen the band gap and delocalize both the HOMO and LUMO. These results show that the surface geometry of the facets plays a pivotal role in defining the electronic properties of the QD.

Guilty as Charged: The Role of Undercoordinated Indium in Electron-Charged Indium Phosphide Quantum Dots

Quantum dots (QDs) are known for their size-dependent optical properties, narrow emission bands, and high photoluminescence quantum yield (PLQY), which make them interesting candidates for optoelectronic applications. In particular, InP QDs are receiving a lot of attention since they are less toxic than other QD materials and are hence suitable for consumer applications. Most of these applications, such as LEDs, photovoltaics, and lasing, involve charging QDs with electrons and/or holes. However, charging of QDs is not easy nor innocent, and the effect of charging on the composition and properties of InP QDs is not yet well understood. This work provides theoretical insight into electron charging of the InP core and InP/ZnSe QDs. Density functional theory calculations are used to show that charging of InP-based QDs with electrons leads to the formation of trap states if the QD contains In atoms that are undercoordinated and thus have less than four bonds to neighboring atoms. InP core-only QDs have such atoms at the surface, which are responsible for the formation of trap states upon charging with electrons. We show that InP/ZnSe core-shell models with all In atoms fully coordinated can be charged with electrons without the formation of trap states. These results show that undercoordinated In atoms should be avoided at all times for QDs to be stably charged with electrons.

Deciphering the Atomistic Mechanism of Si(111)-7 × 7 Surface Reconstruction Using a Machine-Learning Force Field

While the complex 7 × 7 structure that arises upon annealing the Si(111) surface is well-known, the mechanism underlying this unusual surface reconstruction has remained a mystery. Here, we report molecular dynamics simulations using a machine-learning force field for Si to investigate the Si(111)-7 × 7 surface reconstruction from the melt. We find that there are two possible pathways for the formation of the 7 × 7 structure. The first path arises from the growth of a faulted half domain from the metastable 5 × 5 phase to the final 7 × 7 structure, while the second path involves the direct formation of the 7 × 7 reconstruction. Both pathways involve the creation of dimers and bridged five-membered rings, followed by the formation of additional dimers and the stabilization of the triangular halves of the unit cell. The corner hole is formed from the joining of several five-member rings. The insertion of atoms below the adatoms to form a dumbbell configuration involves extra atom diffusion or rearrangement during the evolution of triangular halves and dimer formation along the unit cell boundary. Our findings may provide insights for manipulating the surface structure by introducing other atomic species.

Boosting the Photoluminescence Efficiency of InAs Nanocrystals Synthesized with Aminoarsine via a ZnSe Thick-Shell Overgrowth

InAs-based nanocrystals can enable restriction of hazardous substances (RoHS) compliant optoelectronic devices, but their photoluminescence efficiency needs improvement. We report an optimized synthesis of InAs@ZnSe core@shell nanocrystals allowing to tune the ZnSe shell thickness up to seven mono-layers (ML) and to boost the emission, reaching a quantum yield of ≈70% at ≈900 nm. It is demonstrated that a high quantum yield can be attained when the shell thickness is at least ≈3ML. Notably, the photoluminescence lifetimeshows only a minor variation as a function of shell thickness, whereas the Auger recombination time (a limiting aspect in technological applications when fast) slows down from 11 to 38 ps when increasing the shell thickness from 1.5 to 7MLs. Chemical and structural analyses evidence that InAs@ZnSe nanocrystals do not exhibit any strain at the core-shell interface, likely due to the formation of an InZnSe interlayer. This is supported by atomistic modeling, which indicates the interlayer as being composed of In, Zn, Se and cation vacancies, alike to the In2 ZnSe4 crystal structure. The simulations reveal an electronic structure consistent with that of type-I heterostructures, in which localized trap states can be passivated by a thick shell (>3ML) and excitons are confined in the core.

Structure prediction in low dimensions: concepts, issues and examples

Structure prediction of stable and metastable polymorphs of chemical systems in low dimensions has become an important field, since materials that are patterned on the nano-scale are of increasing importance in modern technological applications. While many techniques for the prediction of crystalline structures in three dimensions or of small clusters of atoms have been developed over the past three decades, dealing with low-dimensional systems-ideal one-dimensional and two-dimensional systems, quasi-one-dimensional and quasi-two-dimensional systems, as well as low-dimensional composite systems-poses its own challenges that need to be addressed when developing a systematic methodology for the determination of low-dimensional polymorphs that are suitable for practical applications. Quite generally, the search algorithms that had been developed for three-dimensional systems need to be adjusted when being applied to low-dimensional systems with their own specific constraints; in particular, the embedding of the (quasi-)one-dimensional/two-dimensional system in three dimensions and the influence of stabilizing substrates need to be taken into account, both on a technical and a conceptual level. This article is part of a discussion meeting issue 'Supercomputing simulations of advanced materials'.

An ab initio approach to anisotropic alloying into the Si(001) surface

By employing density functional theory calculations, we explore the initial stage of competitive alloying of co-deposited silver and indium atoms into a silicon surface. In particular, we identify respective adsorption positions and activation barriers governing their diffusion on a dimer-reconstructed silicon surface. Furthermore, we develop a growth model that appropriately describes diffusion mechanisms and silicon morphology with the account of silicon dimerization and the presence of C-type defects. Based on the surface kinetic Monte Carlo simulations, we examine the dynamics of bimetallic adsorption and elaborate on the temperature effects on the submonolayer growth of an Ag-In alloy. A close inspection of adatom migration clearly indicates effective nucleation of Ag and In atoms, followed by the formation of orthogonal atomic chains. We show that the epitaxial bimetallic growth might potentially lead to exotic ordering of adatoms in the form of anisotropic two-dimensional lattices via orthogonally oriented single-metal rows. We argue that this scenario becomes favorable provided above room temperature, while our numerical results are shown to be in agreement with the experimental findings.

Modeling the Photostability of Solar Water-Splitting Devices and Stabilization Strategies

The practical implementation of photoelectrochemical devices for hydrogen generation is limited by their short lifetimes. Understanding the factors affecting the stability of the heterogeneous photoelectrodes is required to formulate degradation mitigation strategies. We developed a multiscale and multiphysics model to investigate and quantify the photostability of photoelectrodes. The model considers the photophysical processes in an electrocatalyst-coated semiconductor immersed in electrolyte, and the kinetics of the competing water-splitting and photocorrosion reactions. When applied to 12 promising compound semiconductors for use as photoanodes (GaAs, GaP, InP, GaN, SiC, AlP, AlAs, CdTe, CdS, CdSe, ZnS, and ZnSe), the semiconductor-electrocatalyst interfacial charge transfer rate constant was found to be the most significant parameter for stabilizing the photoelectrodes. Its increase induced a sigmoid-like increase in photostability, and its optimization made it possible to stabilize nine semiconductors. The semiconductor surface back-bond energy also increased the photostability in a sigmoid-like response, and its optimization allowed to stabilize five semiconductors. The increase of irradiance induced a logarithmic drop in photostability, and limiting it to 100 W/m² could stabilize three semiconductors. We further observed that the photostability in a device of centimeter-scale can vary by more than 50%, showing stable zones and photocorrosion hotspots. The photoelectrode's length as well as the electrocatalyst and electrolyte conductivities were found to be relevant parameters to impact this heterogeneity in the photostability. Thus, the photostability is not only defined by material properties but also by the specific combination of materials and by the device architecture. The model presented in this study can also be applied to photocathodes and other PEC designs, and can serve as a design tool for understanding, quantifying, and improving the stability.

Structure Relaxation and Liquidlike Enhanced Cu Diffusion at the Surface of β-Cu2S Chalcocite

The hitherto unexplored surface structural and dynamical properties of the thermoelectric material β-Cu₂S chalcocite, are uncovered using ab initio molecular dynamics simulations at 450 K. The material exhibits a hybrid crystalline-liquid behavior, with the liquidlike dynamics of the Cu atoms and the crystalline order of the sulfur sublattice. The topmost nanoscale region of the material is predicted to undergo significant structural relaxation, resulting in a ∼10% increase in the distance between the topmost S-layers accompanied by an increased Cu density. Cu diffusion in the interlayer regions of the surface S-sublattice is enhanced (doubled) compared to the bulk value, and an underlying microscopic mechanism, entailing marked emergent surface-induced softening of the S-sublattice vibrational dynamics, is described.

Band offset in semiconductor heterojunctions

Semiconductor heterojunctions are widely applied in solid-state device applications, including semiconductor lasers, solar cells, and transistors. In photocatalysis they are of interest due to their capability to hinder charge carriers' recombination. A key role in the performance of heterojunctions is that of the alignment of the band edges of the two units composing the junction. In this work, we compare the performances of three widely applied approaches for the simulation of semiconductors heterostructures, based on density functional theory calculations with hybrid functionals. We benchmark the band offsets of ten semiconductors heterostructures for which experimental values are available: AlP/GaP, AlP/Si, AlAs/GaAs, AlAs/Ge, GaAs/Ge, GaP/Si, ZnSe/Ge, ZnSe/AlAs, ZnSe/GaAs, and TiO₂/SrTiO₃. The methods considered are (i) the alternating slabs junction (ASJ), (ii) the surface terminated junction (STJ), and (iii) the independent units (IU) approach. Moreover, two different ways to determine a common reference have been considered, (i) the plane averaged electrostatic potential, and (ii) the energy of the core levels. Advantages, drawbacks and overall performances of each method are discussed. The results suggest that the accuracy in the estimation of the band offsets is ∼0.2 eV when the ASJ method is applied. The STJ approach provides a similar accuracy, while the neglection of any interface effect, as in the IU method, provides only a qualitative estimate of the band offset and can result in significant deviations from the experiment.

Robust atomic-structure of the 6 × 2 reconstruction surface of Ge(110) protected by the electronically transparent graphene monolayer

Wafer-scale growth of the unidirectional graphene monolayer on Ge surfaces has rejuvenated the intense study of the surfaces and interfaces of semiconductors underneath graphene. Recently, it was reported that the Ge atoms in the Ge(110) surface beneath a graphene monolayer underwent a rearrangement and formed an ordered (6 × 2) reconstruction. However, a plausible atomic model related to this (6 × 2) reconstruction is still lacking. Here, by using scanning tunnelling microscopy/spectroscopy (STM/S) and density functional theory (DFT) calculations, we deeply investigated the structural and electronic properties of the Ge(110) (6 × 2) surface encapsulated by a graphene monolayer. The (6 × 2) surface reconstruction was confirmed for the post-annealing-graphene-covered Ge(110) surface via STM, and was found to be quite air-stable, owing to the protection of the graphene monolayer against surface oxidation. Our study disclosed that the topographic features of the topmost graphene monolayer and the Ge(110) surface could be selectively imaged by utilizing suitable scanning biases. According to the STM results and DFT calculations, a rational ball-and-stick model of the (6 × 2) reconstruction was successfully provided, in which an elemental building block comprising two Ge triangles and two isolated Ge atoms adsorbed on the unreconstructed ideal Ge(110) surface. Local density of states of the graphene/Ge surface was explored via scanning tunneling spectroscopy (STS), presenting four well-defined differential conductance (dI/dV) peaks, protruding at energies of 0.2, 0.4, 0.6 and 0.8 eV, respectively. The four peaks predominantly originated from the surface states of the reconstructing adatoms and were well reproduced by our theoretical simulation. This result means that the Ge surface is very robust after being encapsulated by the epitaxial graphene, which could be advantageous for directly fabricating graphene/Ge-hybrid high-speed electronics and optoelectronics based on conventional microelectronics technology.

Bulk (in)stability as a possible source of surface reconstruction

A density functional theory based study is presented with the aim of addressing the surface energy stabilization mechanisms of transition metal carbide and nitride surfaces from a crystal structure different from that of the most stable polymorph. To this end, we consider the MoC(001), MoN(001), WC(001), and WN(001) surface of rocksalt structures, which, for these compounds, is not the most stable one. The geometry optimization of suitable slab models shows that all these surfaces undergo a sensible reconstruction. The energy difference per formula unit between the rock salt and the most stable polymorph seems to be the driving force behind the observed reconstruction. A note of caution is given in that certain small periodic boundary conditions can artificially restrain such reconstructions, for which at least (2×2) supercells are needed. Also, it is shown that neglecting such a surface reconstruction can lead to artifacts in the prediction of the chemical activity and/or reactivity of these surfaces.

Quantum confinement in group III-V semiconductor 2D nanostructures

In this work we investigate the role of quantum confinement in group III-V semiconductor thin films (2D nanostructures). To this end we have studied the electronic structure of nine materials (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb) by means of Density Functional Theory (DFT) calculations using a screened hybrid functional (HSE06). We focus on the structural and electronic properties of bulk and the (110) surfaces, for which we evaluate and rationalize the impact of system size to the band gap and band edge positions. Our results indicate that when the quantum confinement is strong, it mainly affects the position of the Conduction Band Minimum (CBM) of the semiconductor, while the Valence Band Maximum (VBM) is almost insensitive to the system size. The results can be rationalized in terms of electron and hole effective masses. Our conclusions, based on slabs, can be generalized to other cases of quantum confinement such as quantum dots, overcoming the need for an explicit consideration and calculation of the properties of semiconductor nanoparticles.

Boron-terminated diamond (100) surfaces with promising structural and electronic properties

Boron (B) termination plays an important role in determining the surface properties of the diamond (100) surface. A recent study [J. Mater. Chem. C, 2019, 7, 9756] reported a stable surface structure with one B atom per carbon atom based on high-symmetry adsorption sites having a negative electron affinity (EA) property. In this work, using the global structure prediction method and first-principle calculations, four kinds of B-diamond (100) surfaces with 0.5 monolayers (0.5 ML, one B atom per two carbon atoms), and 1 ML-α, 1 ML-β, and 1 ML-γ (one B atom per carbon atom with three types of configurations known as α, β, and γ) coverages obtained are dynamically and thermally stable. The calculations reveal that B termination effectively modulates the EA of the diamond (100) surface. The 0.5 ML coverage has a small positive EA of 0.24 eV, while the latter three 1 ML coverages with different configurations possess the negative EA of -1.27, -1.25, and -0.76 eV, respectively, due to the difference in charge accumulation and surface dipole moment. Moreover, the B-related surface states are introduced into the bandgap of the bulk diamond, and the band dispersions of the surface states are small (large) in 0.5 ML and 1 ML-γ (1 ML-α and 1 ML-β) as a consequence of the different arrangements of B atoms and the bond lengths between B atoms on the surface. Our finding provides theoretical guidance for the design and fabrication of B-diamond-based electronic devices.

Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional sp-bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

Adsorption of Homotrifunctional 1,2,3-Benzenetriol on a Ge(100)-2 × 1 Surface

The adsorption of the homotrifunctional 1,2,3-benzenetriol on Ge(100)-2 × 1 has been investigated by density functional theory calculations, Fourier transform infrared spectroscopy, and X-ray-photoelectron spectroscopy. The results show that the adsorption can occur through OH dissociation of all three hydroxyl groups, and that all three reaction pathways are kinetically and thermodynamically favorable. A coverage-dependent analysis shows that at low coverage, the molecule reacts to form a mix of trifold and dually bound adsorbates. As the coverage increases, the reactions are limited to dissociative adsorption through single and dual attachments. Calculations on the three possible dually bound configurations further reveals that the dissociative adsorption of the third hydroxyl group is limited by geometrical constraints to only two reaction channels. Finally, the proximity between OH-groups in the molecule favors intra- and intermolecular hydrogen bonding, which stabilizes singly and dually bound adsorbate configurations and limits the reactivity of the functional groups.

Water aggregation and dissociation on the ZnO(101̄0) surface

DFT studies reveal a hierarchy of water aggregates including dimers, quasi-1D ladders and a novel honeycomb-double monolayer.

Extent of hydrogen coverage of Si(001) under chemical vapor deposition conditions from ab initio approaches

The extent of hydrogen coverage of the Si(001) c(4 × 2) surface in the presence of hydrogen gas has been studied with dispersion corrected density functional theory. Electronic energy contributions are well described using a hybrid functional. The temperature dependence of the coverage in thermodynamic equilibrium was studied computing the phonon spectrum in a supercell approach. As an approximation to these demanding computations, an interpolated phonon approach was found to give comparable accuracy. The simpler ab initio thermodynamic approach is not accurate enough for the system studied, even if corrections by the Einstein model for surface vibrations are considered. The on-set of H2 desorption from the fully hydrogenated surface is predicted to occur at temperatures around 750 K. Strong changes in hydrogen coverage are found between 1000 and 1200 K in good agreement with previous reflectance anisotropy spectroscopy experiments. These findings allow a rational choice for the surface state in the computational treatment of chemical reactions under typical metal organic vapor phase epitaxy conditions on Si(001).

Synthesis of two-dimensional Tl(x)Bi(1-x) compounds and Archimedean encoding of their atomic structure

Crystalline atomic layers on solid surfaces are composed of a single building block, unit cell, that is copied and stacked together to form the entire two-dimensional crystal structure. However, it appears that this is not an unique possibility. We report here on synthesis and characterization of the one-atomic-layer-thick Tl_xBi_1−x compounds which display quite a different arrangement. It represents a quasi-periodic tiling structures that are built by a set of tiling elements as building blocks. Though the layer is lacking strict periodicity, it shows up as an ideally-packed tiling of basic elements without any skips or halting. The two-dimensional Tl_xBi_1−x compounds were formed by depositing Bi onto the Tl-covered Si(111) surface where Bi atoms substitute appropriate amount of Tl atoms. Atomic structure of each tiling element as well as arrangement of Tl_xBi_1−x compounds were established in a detail. Electronic properties and spin texture of the selected compounds having periodic structures were characterized. The shown example demonstrates possibility for the formation of the exotic low-dimensional materials via unusual growth mechanisms.

The unexpectedly rich reconstructions of rutile TiO2(011)-(2 × 1) surface and the driving forces behind their formation: an ab initio evolutionary study

In this paper, we employ state-of-the-art theoretical approaches to elucidate the structures of the (011) surface of rutile (R-)TiO₂.

Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application

III-V compound semiconductor and Ge are promising channel materials for future low-power and high-performance integrated circuits. A heterogeneous integration of these materials on the same platform, however, raises serious problem owing to a huge mismatch of carrier mobility. We proposed direct integration of perfectly vertically aligned InAs nanowires on Ge as a method for new alternative integrated circuits and demonstrated a high-performance InAs nanowire-vertical surrounding-gate transistor. Virtually 100% yield of vertically aligned InAs nanowires was achieved by controlling the initial surface of Ge and high-quality InAs nanowires were obtained regardless of lattice mismatch (6.7%). The transistor performance showed significantly higher conductivity with good gate control compared to Si-based conventional field-effect transistors: the drain current was 0.65 mA/μm, and the transconductance was 2.2 mS/μm at drain-source voltage of 0.50 V. These demonstrations are a first step for building alternative integrated circuits using vertical III-V/multigate planar Ge FETs.

The addition of nitriles to tetramesityldisilene: a comparison of the reactivity between surface and molecular disilenes

The addition of acetonitrile, propionitrile, and phenylacetonitrile to tetramesityldisilene (Mes2 Si=SiMes2 ) was examined. In general, 1,2,3-azadisiletines and the tautomeric enamines were formed, although a ketenimine was formed as the major product in the addition of phenylacetonitrile to the disilene. In the presence of LiCl, the mode of addition changed for both acetonitrile and propionitrile: insertion into the α-CH bond of acetonitrile and/or formation of the formal HCN adduct was observed. Preliminary investigations of the reactivity of the nitrile adducts are also reported. A comparison between the reactivity of nitriles with Mes2 Si=SiMes2 and the Si(100)-2×1 surface was made both in terms of the types of adducts formed and their reactivity. Some insights into the surface chemistry are offered.

Unexpected reconstruction of the α-boron (111) surface

We report a novel reconstruction of the α-boron (111) surface, discovered using ab initio evolutionary structure prediction, and show that this unexpected neat structure has a much lower energy than the recently proposed (111)-I(R,(a)) surface. In this reconstruction, all single interstitial boron atoms bridge neighboring B(12) icosahedra by polar covalent bonds, and this satisfies the electron counting rule, leading to the reconstruction-induced metal-semiconductor transition. The peculiar charge transfer between the interstitial atoms and the icosahedra plays an important role in stabilizing the surface.

From the bottom up: dimensional control and characterization in molecular monolayers

Self-assembled monolayers are a unique class of nanostructured materials, with properties determined by their molecular lattice structures, as well as the interfaces with their substrates and environments. As with other nanostructured materials, defects and dimensionality play important roles in the physical, chemical, and biological properties of the monolayers. In this review, we discuss monolayer structures ranging from surfaces (two-dimensional) down to single molecules (zero-dimensional), with a focus on applications of each type of structure, and on techniques that enable characterization of monolayer physical properties down to the single-molecule scale.

Dimerization of boron dopant in diamond (100) epitaxy induced by strong pair correlation on the surface

Experiments have shown that boron incorporation in diamond epitaxies is orientation dependent. Our first-principles calculations reveal that at a (100) surface, the formation of the boron dimer is more favored than that of the monomer, indicating a high density of ineffective boron formed under heavy doping. The reconstructed surface layer of carbon dimers in which the electrons are strongly pair correlated provides the mechanism. Hydrogen adsorption affects the correlation and thus the favorability of boron dimer formation, while at a (111) surface, the formation of boron monomer is more favored due to the less correlated surface electrons and hydrogen adsorption has no effect on the favorability.

CYCLOADDITION REACTION BETWEEN ORGANIC MOLECULES AND Si(100) AND ELECTRONIC PROPERTIES OF ADSORBED MOLECULES

The mechanism of cycloaddition reaction between ethylene and the Si dimer on Si (100) is discussed from our recent experimental results using high-resolution electron energy loss spectroscopy and valence photoelectron spectroscopy at ~50 K. The weakly adsorbed π-complex state is identified as a precursor for di-σ bond formation and the activation barrier is roughly estimated to be ~0.2 eV. A different reaction route may exist since a di-σ species is also observed at low temperature. Using cycloaddition reaction, unsaturated organic molecules are chemically attached to the dimer on Si (100), and the adsorbed species are relatively stable. Thus, scanning tunneling spectroscopy (STS) measurements of a single adsorbed molecule can be carried out at room temperature. We report the STS results of 2-butyne adsorbed on Si (100).

Thermal decomposition mechanisms of methylamine, ethylamine, and 1-propylamine on Si(100)-2 × 1 surface

The thermal decomposition reactions of methylamine, ethylamine, and 1-propylamine absorbed on Si(100)-2 × 1 surface were theoretically investigated. Eight decomposition channels were found leading to desorption products of imine, H(2), alkyl cyanide, ammonia, aziridine, alkene, azetidine, and cyclopropane, which supports the experimental assignments. Our mechanistic studies strongly suggest that the alkyl cyanide (hydrogen cyanide in the case of methylamine) channel is coupled with the hydrogen desorption step. The β-hydrogen of ethylamine and 1-propylamine was found to undergo additional decomposition reactions producing aziridine and alkene, which were classified as γ- and β-eliminations, respectively. It was also found that the γ-hydrogen of 1-propylamine undergoes azetidine and cyclopropane producing decompositions, which were classified as δ- and γ-eliminations. In general, γ- and δ-hydrogen involved decomposition reactions are kinetically less favorable than β-hydrogen involved ones. Consequently, it is expected that the thermal decompositions of the primary alkyl amines with longer alkyl chains would not add additional favorable decomposition channels. Except alkyl cyanide and ammonia desorption channels, the decompositions occur in a concerted fashion.

Superlattice Growth via MBE and Green's Function Techniques

A model has been developed to simulate the growth of arrays consisting of a substrate on which alternating layers of quantum dots (QDs) and spacer layers are epitaxially grown. The substrate and spacer layers are modeled as an anisotropic elastic half-space, and the QDs are modeled as point inclusions buried within the half-space. In this model, the strain at the free surface of this half-space due to the buried point QDs is calculated, and a scalar measure of the strain at the surface is subsequently determined. New point QDs are placed on the surface where the previously calculated scalar strain measure is a minimum. Following available DFT results, this scalar strain measure is a weighted average of the in-plane strains. This model is constructed under the assumption that diffusional anisotropy can be neglected, and thus, the results are more in agreement with results from experiments of growth of SiGe QDs than experiments involving QDs of (In,Ga)As.

Chemical bonding in crystals: new directions

Analysis of the chemical bonding in the position space, instead of or besides that in the wave function (Hilbert) orbital space, has become increasingly popular for crystalline systems in the past decade. The two most frequently used investigative tools, the Quantum Theory of Atoms in Molecules and Crystal (QTAIMAC) and the Electron Localization Function (ELF) are thoroughly discussed. The treatment is focussed on the topological peculiarities that necessarily arise from the periodicity of the crystal lattice and on those facets of the two tools that have been more debated, especially when these tools are applied to the condensed phase. In particular, in the case of QTAIMAC, the physical and chemical significance of the bond paths for the very weak or the supposedly repulsive interactions, the distinctive features and the appropriateness of the several schemes that have been proposed to classify chemical bonds, and, finally, the relative importance of the local and integrated electron density properties for describing intermolecular interactions. In the case of the ELF, particular attention is devoted to how this function is formulated and to the related physical meaning, and to how can the ELF be chemically interpreted and properly analysed in crystals. Several examples are reported to illustrate all these points and for critically examine the answers obtained and the problems encountered. The discussed examples encompass the case of molecular crystals, Zintl phases, intermetallic compounds, metals, supported and unsupported metal-metal bonds in organometallics, ionic solids, crystal surfaces, crystal defects, etc. Whenever possible joint ELF and QTAIMAC studies are considered, with particular emphasis on the comparison of the bond description afforded by the ELF and the Laplacian of the electron density. Two recently proposed functions, the Localized Orbital Locator (LOL) and the Source Function in its integrated or local form are also presented, in view of their potential interest for stud ies of chemical bonding in crystals. The use of approximated ELF and LOL, as derived from the density functional form of the positive kinetic energy density, is also discussed.

Functionalization of the semiconductor surfaces of diamond (100), Si (100), and Ge (100) by cycloaddition of transition metal oxides: a theoretical prediction

The viability of functionalization of the semiconductor surfaces of diamond (100), Si (100), and Ge (100) by traditional [3 + 2] cycloaddition of transition metal oxides has been predicted using effective cluster models in the framework of density functional theory. The cycloaddition of transition metal oxides (OsO(4), RuO(4), and MnO(4)(-)) onto the X (100) (X = C, Si, and Ge) surface is much more facile than that of other molecular analogues including ethylene, fullerene, and single-walled carbon nanotubes because of the high reactivity of surface dimers of X (100). Our computational results demonstrate the plausibility that the well-known [3 + 2] cycloaddition of transition metal oxides to alkenes in organic chemistry can be employed as a new type of surface reaction to functionalize the semiconductor X (100) surface, which offers the new possibility for self-assembly or chemical functionalization of X (100) at low temperature. More importantly, the chemical functionalization of X (100) by cycloaddition of transition metal oxides provides the molecular basis for preparation of semiconductor-supported catalysts but also strongly advances the concept of using organic reactions to modify the solid surface, particularly to modify the semiconductor C (100), Si (100), and Ge (100) surfaces for target applications in numerous fields such as microelectronics and heterogeneous photocatalysis.