Control of Rectification in Molecular Junctions: Contact Effects and Molecular Signature

Photo-Controlled Conductance and Thermopower Switching in a Soft Photochromic Metallo-Supramolecular Polymer via EGaIn Junctions

Photochromic soft metallo-supramolecular materials undergo precise, reversible transformations in structure and electronic properties under light irradiation, offering potential applications in optoelectronics, sensing, and molecular switches. Herein, we report the synthesis, characterization, and investigation of light-induced reversible morphological transformations in a Zn(II)-based photochromic coordination polymer gel (Zn-pcCPG), integrated with a dithienylethene (DTE) unit. Upon UV irradiation (λ = 365 nm), Zn-pcCPG undergoes morphological transformation from nanofibers in the gel state to spherical nanoparticles in the sol state, involving reversible photoswitching with distinct color change. To explore the charge transport properties of these metallo-supramolecular polymers, we created a EGaIn/GaOX//Zn-pcCPG//AuTS junction using the nanostructures of Zn-pcCPG on a template-stripped gold substrate (AuTS) and a soft conformal EGaIn as the top electrode. These measurements show a reversible conductance photoswitching between the "open" and "closed" states of the coordination polymer gel containing a DTE core with an on/off ratio of ≈58 at -1 V. Additionally, we have also demonstrated the on-surface photoswitching of morphology and conductance properties. Interestingly, thermoelectric property measurements reveal a HOMO-dominated charge transport for both "open" and "closed" forms of Zn-pcCPG, with a reversible thermopower switching from +163 μV/K (open form) to +21 μV/K (closed form) and vice versa. By employing UV-Vis and ultraviolet photoelectron spectroscopy measurements, we have explained the experimental conductance and thermopower trends. This is the first study to demonstrate reversible conductance and thermopower switching with morphological transitions in a photochromic coordination polymer gel (pcCPG), paving the way for advancements in CPG-based supramolecular electronics.

Harnessing carbon electrodes in molecular junctions: progress and challenges in device engineering

The relentless pursuit of miniaturization and enhanced functionality in electronic devices has driven researchers to explore innovative approaches. Carbon electrode-based molecular junctions (MJs) have emerged as a promising frontier in the quest for next-generation electronics. This review provides a comprehensive overview of the current state of research on carbon-based MJs for practical devices, focusing on their unique properties, such as charge transport phenomena, fabrication methods, and potential applications in revolutionizing electronic components. The inherent quantum nature of molecules introduces distinct electronic properties, enabling functionalities beyond those achievable with traditional semiconductor-based devices. The diverse range of molecules employed in creating these junctions highlights their tailored electronic characteristics and, consequently, device performance. The fabrication techniques for MJs are discussed in detail. The charge transport mechanisms in such junctions are also discussed, along with temperature effects. Additionally, the review addresses the integration of MJs into electronic circuits, considering scalability, reproducibility, and compatibility with existing manufacturing technologies. The potential applications of MJs in electronic devices, such as temperature-independent robust practical photosensors, photoswitches, charge storage devices, sensors and LEDs, are elucidated. However, challenges, such as stability, variability, and large-scale integration, are also addressed to realize the full potential of MJs in practical applications.

Boron-Doped Single-Molecule van der Waals Diode

Single-molecule diode was the first proposed device in molecular electronics. Despite the great efforts and advances over 50 years, the reported rectification ratios, the most critical parameter of a diode, remain moderate for the single-molecule diode. Herein, we report an approach to achieve a larger rectification ratio by adopting the combined strategies of p-type boron doping, the single-layer graphene nodes, and the van der Waals layer-by-layer architecture. Measured current-voltage curves showed one of the as-fabricated single-molecule diodes hit an unprecedented large rectification ratio of 457 at ±1 V. Break junction operations and spectroscopic measurements revealed the three-atom-thick configuration of the single-molecule diodes. With the experimental and theoretical calculation results, we demonstrated the doped boron atoms induced holes to redistribute the electron density, making the asymmetric coupling at positive and negative biases, and the van der Waals interaction promoted asymmetric coupling and significantly boosted diode performance.

Insight of Employing Molecular Junctions for Sensor Applications

Molecular junctions (MJs) exhibit distinct charge transport properties and have the potential to become the next generation of electronic devices. Advancing molecular electronics for practical uses, such as sensors, is crucial to propel its progress to the next level. In this review, we discussed how MJs can serve as a sensor for detecting a wide range of analytes with exceptional sensitivity and specificity. The primary advances and potential of molecular junctions for the various kinds of sensors including photosensors, explosives (DNTs, TNTs), cancer biomarker detection (DNA, mRNA), COVID detection, biogases (CO, NO, NH), environmental pH, practical chemicals, and water pollutants are listed and examined here. The fundamental ideas of molecular junction formation as well as the sensing mechanism have been examined here. This review demonstrates that MJ-based sensors hold significant promise for real-time and on-site detection. It provides valuable insights into current research and outlines potential future directions for advancing molecular junction-based sensors for practical applications.

Gradual Change between Coherent and Incoherent Tunneling Regimes Induced by Polarizable Halide Substituents in Molecular Tunnel Junctions

This paper describes a gradual transition of charge transport across molecular junctions from coherent to incoherent tunneling by increasing the number and polarizability of halide substituents of phenyl-terminated aliphatic monolayers of the form S(CH2)10OPhXn, X = F, Cl, Br, or I; n = 0, 1, 2, 3, or 5. In contrast to earlier work where incoherent tunneling was induced by introducing redox-active groups or increasing the molecular length, we show that increasing the polarizability, while keeping the organization of the monolayer structure unaltered, results in a gradual change in the mechanism of tunneling of charge carriers where the activation energy increased from 23 meV for n = 0 (associated with coherent tunneling) to 257 meV for n = 5 with X = Br (associated with incoherent tunneling). Interestingly, this increase in incoherent tunneling rate with polarizability resulted in an improved molecular diode performance. Our findings suggest an avenue to improve the electronic function of molecular devices by introducing polarizable atoms.

Dynamically blocking leakage current in molecular tunneling junctions

Molecular tunneling junctions based on self-assembled monolayers (SAMs) have demonstrated rectifying characteristics at the nanoscale that can hardly be achieved using traditional approaches. However, defects in SAMs result in high leakage when applying bias. The poor performance of molecular diodes compared to silicon or thin-film devices limits their further development. In this study, we show that incorporating "mixed backbones" with flexible-rigid structures into molecular junctions can dynamically block tunneling currents, which is difficult to realize using non-molecular technology. Our idea is achieved by the interaction between interfacial dipole moments and electric field, triggering structured packing in SAMs. Efficient blocking of leakage by more than an order of magnitude leads to a significant enhancement of the rectification ratio to the initial value. The rearrangement of supramolecular structures has also been verified through electrochemistry and electroluminescence measurements. Moreover, the enhanced rectification is extended to various challenging environments, including endurance measurements, bending of electrodes, and rough electrodes, thus demonstrating the feasibility of the dynamic behavior of molecules for practical electronic applications.

Tuneable Current Rectification Through a Designer Graphene Nanoribbon

Unimolecular current rectifiers are fundamental building blocks in organic electronics. Rectifying behavior has been identified in numerous organic systems due to electron-hole asymmetries of orbital levels interfaced by a metal electrode. As a consequence, the rectifying ratio (RR) determining the diode efficiency remains fixed for a chosen molecule-metal interface. Here, a mechanically tunable molecular diode exhibiting an exceptionally large rectification ratio (>105) and reversible direction is presented. The molecular system comprises a seven-armchair graphene nanoribbon (GNR) doped with a single unit of substitutional diboron within its structure, synthesized with atomic precision on a gold substrate by on-surface synthesis. The diboron unit creates half-populated in-gap bound states and splits the GNR frontier bands into two segments, localizing the bound state in a double barrier configuration. By suspending these GNRs freely between the tip of a low-temperature scanning tunneling microscope and the substrate, unipolar hole transport is demonstrated through the boron in-gap state's resonance. Strong current rectification is observed, associated with the varying widths of the two barriers, which can be tuned by altering the distance between tip and substrate. This study introduces an innovative approach for the precise manipulation of molecular electronic functionalities, opening new avenues for advanced applications in organic electronics.

Development and mechanisms of photo-induced molecule junction device

The utilization of single molecule electronic devices represents a significant avenue toward advancing next-generation circuits. Recent investigations have notably augmented our understanding of the optoelectronic characteristics exhibited by diverse single molecule materials. This comprehensive review underscores the latest progressions in probing photo-induced electron transport behaviors within molecular junctions. Encompassing both single molecule and self-assembled monolayer configurations, this review primarily concentrates on unraveling the fundamental mechanisms and guiding principles underlying photo-switchable devices within single molecule junctions. Furthermore, it presents an outlook on the obstacles faced and future prospects within this dynamically evolving domain.

CP-AFM Molecular Tunnel Junctions with Alkyl Backbones Anchored Using Alkynyl and Thiol Groups: Microscopically Different Despite Phenomenological Similarity

In this paper, we report results on the electronic structure and transport properties of molecular junctions fabricated via conducting probe atomic force microscopy (CP-AFM) using self-assembled monolayers (SAMs) of n-alkyl chains anchored with acetylene groups (CnA; n = 8, 9, 10, and 12) on Ag, Au, and Pt electrodes. We found that the current-voltage (I-V) characteristics of CnA CP-AFM junctions can be very accurately reproduced by the same off-resonant single-level model (orSLM) successfully utilized previously for many other junctions. We demonstrate that important insight into the energy-level alignment can be gained from experimental data of transport (processed via the orSLM) and ultraviolet photoelectron spectroscopy combined with ab initio quantum chemical information based on the many-body outer valence Green's function method. Measured conductance GAg < GAu < GPt is found to follow the same ordering as the metal work function ΦAu < ΦAu < ΦPt, a fact that points toward a transport mediated by an occupied molecular orbital (MO). Still, careful data analysis surprisingly revealed that transport is not dominated by the ubiquitous HOMO but rather by the HOMO-1. This is an important difference from other molecular tunnel junctions with p-type HOMO-mediated conduction investigated in the past, including the alkyl thiols (CnT) to which we refer in view of some similarities. Furthermore, unlike in CnT and other junctions anchored with thiol groups investigated in the past, the AFM tip causes in CnA an additional MO shift, whose independence of size (n) rules out significant image charge effects. Along with the prevalence of the HOMO-1 over the HOMO, the impact of the "second" (tip) electrode on the energy level alignment is another important finding that makes the CnA and CnT junctions different. What ultimately makes CnA unique at the microscopic level is a salient difference never reported previously, namely, that CnA's alkyne functional group gives rise to two energetically close (HOMO and HOMO-1) orbitals. This distinguishes the present CnA from the CnT, whose HOMO stemming from its thiol group is well separated energetically from the other MOs.

Tuning of Interfacial Charge Transport in Organic Heterostructures via Aryl Electrografting for Efficient Gas Sensors

Modulation of interfacial conductivity in organic heterostructures is a highly promising strategy to improve the performance of electronic devices. In this endeavor, the present work reports the fabrication of a bilayer heterojunction device, combining octafluoro copper phthalocyanine (CuF8Pc) and lutetium bis-phthalocyanine (LuPc2) and tunes the charge transport at the Cu(F8Pc)-(LuPc2) interface by aryl electrografting on the device electrode to improve the device NH3-sensing properties. Dimethoxybenzene (DMB) and tetrafluoro benzene (TFB) electrografted by an aryldiazonium electroreduction method form a few-nanometer-thick organic film on ITO. The conductivity of the heterojunction devices formed by coating a Cu(F8Pc)/LuPc2 bilayer over the aryl-grafted electrode strongly varies according to the electronic effects of the substituents in the aryl. Accordingly, DMB increases while TFB decreases the mobile charges accumulation at the Cu(F8Pc)-(LuPc2) interface. This is explained by the perfect alignment of the frontier molecular orbitals of DMB and Cu(F8Pc), facilitating charge injection into the Cu(F8Pc) layer. On the contrary, TFB behaves like a strong acceptor and reduces the mobile charges accumulation at the Cu(F8Pc)-(LuPc2) interface. Such interfacial conductivity variation influences the device NH3-sensing properties, which increase because of DMB grafting and decrease in the presence of TFB. DMB-based heterojunction devices contain four times higher active sites for NH3 adsorption and could detect NH3 down to 1 ppm with limited interference from humidity, making them suitable for real environment NH3 detection.

Deciphering I-V characteristics in molecular electronics with the benefit of an analytical model

We share our perspective that a simple analytical model for electron tunneling in molecular junctions can greatly aid quantitative analysis of experimental data in molecular electronics. In particular, the single-level model (SLM), derived from first principles, provides a precise prediction for the current-voltage (I-V) characteristics in terms of key electronic structure parameters, which in turn depend on the molecular and contact architecture. SLM analysis thus facilitates understanding of structure-property relationships and provides metrics that can be compared across different types of tunnel junctions, as we illustrate with several examples.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

Probing the Effect of the Density of Active Molecules in Large-Area Molecular Junctions

The effect of the density of active molecules in molecular junctions (MJs) has been investigated by using a host/guest strategy. Mixed layers consisting of oligothiophene (BTB) encapsulated by β-cyclodextrin (BTB@β-CD) were generated. Cyclodextrins were then removed, and the pinholes generated were filled with BTB to obtain BTB@BTB films. MJs based on mixed BTB@β-CD and BTB@BTB layers, as well as single-component BTB MJs, were compared. The variation of ln J vs thickness is similar for all systems while the J_o of BTB@β-CD MJs is 20 times lower than that of BTB MJs. After β-cyclodextrin has been removed, and the pinholes filled, J_o increases and reaches the same value as for the BTB MJs, showing that the conductance scales with the number of active molecules. This strategy provides a unique method for investigating molecular interactions in direct tunneling MJs as well as the possibility of fabricating new functionalized MJs based on mixed layers.

Chemical Conformation Induced Transport Carrier Switching in Molecular Junction based on Carboxylic-Terminated Thiol Molecules

The paper demonstrates the effect of the chemical conformation of the -COOH group on the transport characteristic including conductance, rectification, and length effect in molecular junctions (MJs) formed by self-assembled monolayers of carboxylic-terminated thiol molecules. For an alkyl chain shorter than C₁₁, the transport mechanism was attributed to a direct off-resonant tunneling of a hole carrier, located at the Au-S interface, whereas a hopping mechanism was assigned to the alkyl chain longer than the C₁₁ chain located at the -COOH group. The hopping mechanism may be operated by electron transport associated with the breaking of the -OH bonding likely driven by a voltage. Importantly, at the C₁₁ alkyl chain, we observed that the transport carrier operating in MJs could change from a hole carrier into an electron carrier. The result strongly proves that the chemical conformation should be considered in analyzing molecular electronics and provides a basis for the rational design of molecular electronic devices.

Combined spin filtering actions in hybrid magnetic junctions based on organic chains covalently attached to graphene

We present a bias-controlled spin-filtering mechanism in spin-valves including a hybrid organic chain/graphene interface. Wet growth conditions of oligomeric molecular chains would usually lead, during standard CMOS-compatible fabrication processes, to the quenching of spintronics properties of metallic spin sources due to oxidation. We demonstrate by X-ray photoelectron spectroscopy that the use of a protective graphene layer fully preserves the metallic character of the ferromagnetic surface and thus its capability to deliver spin polarized currents. We focus here on a small aromatic chain of controllable lengths, formed by nitrobenzene monomers and derived from the commercial 4-nitrobenzene diazonium tetrafluoroborate, covalently attached to the graphene passivated spin sources thanks to electroreduction. A unique bias dependent switch of the spin signal is then observed in complete spin valve devices, from minority to majority spin carriers filtering. First-principles calculations are used to highlight the key role played by the spin-dependent hybridization of electronic states present at the different interfaces. Our work is a first step towards the exploration of spin transport using different functional molecular chains. It opens the perspective of atomic tailoring of magnetic junction devices towards spin and quantum transport control, thanks to the flexibility of ambient electrochemical surface functionalization processes.

Long-Range Plasmon-Induced Anisotropic Growth of an Organic Semiconductor between Isotropic Gold Nanoparticles

Plasmon-induced diazonium reduction was used to graft an organic semiconductor, namely oligo(bisthienylbenzene) (BTB), onto square arrays of gold nanoparticles (NPs) of various diameters. Grafting was evidenced by scanning electron microscopy (SEM) measurements by the extinction spectra of the localized surface plasmon resonance, as well as by Raman and energy dispersive X-ray (EDX) spectroscopies. We show that BTB is selectively deposited around the NPs. The thickness of the layer increases with increasing irradiation time and reaches a limit which depends on the size of the NPs with the thicker organic layers being generated for smaller NPs. Under polarized irradiation, BTB growth is strongly anisotropic. Starting from arrays with square gratings and spherical NPs, long-range plasmon-induced anisotropic growth makes it possible to generate in the direction of the polarized light, lines, columns, or lines and columns of NPs connected by an organic semiconductor. These results demonstrate that the growth is due to hot electrons.

Electronic Mechanism of In Situ Inversion of Rectification Polarity in Supramolecular Engineered Monolayer

This Communication describes polarity inversion in molecular rectification and the related mechanism. Using a supramolecular engineered, ultrastable, binary-mixed self-assembled monolayer (SAM) composed of an organic molecular diode (SC₁₁BIPY) and an inert reinforcement molecule (SC₈), we probed a rectification ratio (r)-voltage relationship over an unprecedentedly wide voltage range (up to |3.5 V|) with statistical significance. We observed positive polarity in rectification at |1.0 V| (r = 107), followed by disappearance of rectification at ∼|2.25 V|, and then eventual emergence of new rectification with the opposite polarity at ∼|3.5 V| (r = 0.006; 1/r = 162). The polarity inversion occurred with a span over 4 orders of magnitude in r. Low-temperature experiments, electronic structure analysis, and theoretical calculations revealed that the unusually wide voltage range permits access to molecular orbital energy levels that are inaccessible in the traditional narrow voltage regime, inducing the unprecedented in situ inversion of polarity.

Light-Driven Charge Transport and Optical Sensing in Molecular Junctions

Probing charge and energy transport in molecular junctions (MJs) has not only enabled a fundamental understanding of quantum transport at the atomic and molecular scale, but it also holds significant promise for the development of molecular-scale electronic devices. Recent years have witnessed a rapidly growing interest in understanding light-matter interactions in illuminated MJs. These studies have profoundly deepened our knowledge of the structure–property relations of various molecular materials and paved critical pathways towards utilizing single molecules in future optoelectronics applications. In this article, we survey recent progress in investigating light-driven charge transport in MJs, including junctions composed of a single molecule and self-assembled monolayers (SAMs) of molecules, and new opportunities in optical sensing at the single-molecule level. We focus our attention on describing the experimental design, key phenomena, and the underlying mechanisms. Specifically, topics presented include light-assisted charge transport, photoswitch, and photoemission in MJs. Emerging Raman sensing in MJs is also discussed. Finally, outstanding challenges are explored, and future perspectives in the field are provided.

Electrografting and Langmuir-Blodgett: Covalently Bound Nanometer-Thick Ordered Films on Graphite

We present two different molecular organizations obtained from octadecylamine (ODA) molecules on a highly oriented pyrolytic graphite (HOPG) surface: (i) self-organized physisorbed ODA molecules lying flat on the surface and (ii) a strongly electrografted compact crystalline monolayer of ODA molecules standing up on the surface. This new structure is obtained by combining the Langmuir-Blodgett transfer of an ODA Langmuir film onto HOPG with oxidative electrografting. The presence of an organic film on HOPG is characterized by attenuated total reflectance-infrared spectroscopy and Raman spectroscopy, while atomic force microscopy and scanning tunneling microscopy allow the observation of the two molecular organizations with adsorbed molecules lying flat on HOPG or strongly grafted in an upright position on the HOPG surface. Interestingly, the second molecular organization preserves a hexagonal symmetry and its lattice parameters are intermediate between those of ODA Langmuir films and that of the HOPG underlying surface. The functionalization of surfaces with organic films is a major issue in the design of sensors with biomedical applications or organic electronics and energy storage devices and these structures may find applications in these fields.

Quantitative analysis of weak current rectification in molecular tunnel junctions subject to mechanical deformation reveals two different rectification mechanisms for oligophenylene thiols versus alkane thiols

Metal-molecule-metal junctions based on alkane thiol (CnT) and oligophenylene thiol (OPTn) self-assembled monolayers (SAMs) and Au electrodes are expected to exhibit similar electrical asymmetry, as both junctions have one chemisorbed Au-S contact and one physisorbed, van der Waals contact. Asymmetry is quantified by the current rectification ratio RR apparent in the current-voltage (I-V) characteristics. Here we show that RR < 1 for CnT and RR > 1 for OPTn junctions, in contrast to expectation, and further, that RR behaves very differently for CnT and OPTn junctions under mechanical extension using the conducting probe atomic force microscopy (CP-AFM) testbed. The analysis presented in this paper, which leverages results from the previously validated single level model and ab initio quantum chemical calculations, allows us to explain the puzzling experimental findings for CnT and OPTn in terms of different current rectification mechanisms. Specifically, in CnT-based junctions the Stark effect creates the HOMO level shifting necessary for rectification, while for OPTn junctions the level shift arises from position-dependent coupling of the HOMO wavefunction with the junction electrostatic potential profile. On the basis of these mechanisms, our quantum chemical calculations allow quantitative description of the impact of mechanical deformation on the measured current rectification. Additionally, our analysis, matched to experiment, facilitates direct estimation of the impact of intramolecular electrostatic screening on the junction potential profile. Overall, our examination of current rectification in benchmark molecular tunnel junctions illuminates key physical mechanisms at play in single step tunneling through molecules, and demonstrates the quantitative agreement that can be obtained between experiment and theory in these systems.

Unprecedented ON/OFF Ratios in Photoactive Diarylethene-Bisthienylbenzene Molecular Junctions

Photoactive molecular junctions, based on 4 nm thick diarylethene (DAE) and 5 nm thick bisthienylbenzene (BTB) layers, were fabricated by electrochemical deposition. Total thickness was around 9 nm, that is, above the direct tunneling limit and in the hopping regime. The DAE units were switched between their open and closed forms. The DAE/BTB bilayer structure exhibits new electronic functions combining photoswitching and photorectification. The open form of DAE/BTB shows low conductance and asymmetric I-V curves while the closed form shows symmetric I-V curves and high conductance. More importantly, unprecedented ON/OFF current ratios of over 10 000 at 1 V were reproducibly measured.

Single-Molecule Junctions with Highly Improved Stability

Single-molecule junctions (SMJs) have been fabricated using layers generated by diazonium electroreduction. This process creates a C-Au covalent bond between the molecule and the electrode. Rigid oligomers of variable length, based on porphyrin derivatives in their free base or cobalt complex forms, have been grafted on the surface. The conductance of the oligomers has been studied by a scanning tunneling microscopy break junction (STM-bj) technique and G(t) measurements, and the lifetime of the SMJs has been investigated. The conductance histograms indicate that charge transport in the porphyrins is relatively efficient and influenced by the presence of the cobalt center. With both systems, random telegraph G(t) signals are easily recorded, showing SMJ on/off states. The SMJs then stabilize and exhibit a surprisingly long lifetime around 10 s, and attenuation plots, obtained by both G(t) and STM-bj measurements, give identical values. This work shows that highly stable SMJs can be prepared using a diazonium grafting approach.

Electron Transport of the Nanojunctions of (BN) n (n = 1-4) Linear Chains: A First-Principles Study

We applied the density functional theory and nonequilibrium Green's function method (DFT + NEGF) to investigate the relationship between the conductance and chain length in the stretching process, the asymmetric coupling of contact points, and the influence of positive and negative biases on the electron transport properties of the nanojunctions formed by the coupling of (BN) _n (n = 1-4) linear chains and Au(100)-3 × 3 semi-infinite electrodes. We find that the BN junction has the lowest stability and the (BN)₂ junction has the highest stability. Under zero bias, the equilibrium conductance decreases as the chain length increases; p_x and p_y orbitals play a leading role in electron transport. In the bias range of -1.6 to 1.6 V, the current of the (BN) _n (n = 1-4) linear chains increases linearly with increasing voltage. Under the same bias voltage, (BN)₁ has the largest current, so its electron transport property is the best. The rectification effect reflects the asymmetry of the structure of BN linear chains themselves and the asymmetry of coupling with the Au electrode surfaces at both ends. With the chain length increasing, the transmission spectrum near E _f is suppressed, the tunneling current decreases, and the rectification ratio increases. (BN)₄ molecular junctions have the largest rectification ratio, reaching 13.32 when the bias voltage is 1.6 V. Additionally, the Au-N strong coupling is more conducive to the electron transport of the molecular chain than the Au-B weak coupling. Our calculations provide an important theoretical reference for the design and development of BN linear-chain nanodevices.

Reversal of the Direction of Rectification Induced by Fermi Level Pinning at Molecule-Electrode Interfaces in Redox-Active Tunneling Junctions

Control over the energy level alignment in molecular junctions is notoriously difficult, making it challenging to control basic electronic functions such as the direction of rectification. Therefore, alternative approaches to control electronic functions in molecular junctions are needed. This paper describes switching of the direction of rectification by changing the bottom electrode material M = Ag, Au, or Pt in M-S(CH₂)₁₁S-BTTF//EGaIn junctions based on self-assembled monolayers incorporating benzotetrathiafulvalene (BTTF) with EGaIn (eutectic alloy of Ga and In) as the top electrode. The stability of the junctions is determined by the choice of the bottom electrode, which, in turn, determines the maximum applied bias window, and the mechanism of rectification is dominated by the energy levels centered on the BTTF units. The energy level alignments of the three junctions are similar because of Fermi level pinning induced by charge transfer at the metal-thiolate interface and by a varying degree of additional charge transfer between BTTF and the metal. Density functional theory calculations show that the amount of electron transfer from M to the lowest unoccupied molecular orbital (LUMO) of BTTF follows the order Ag > Au > Pt. Junctions with Ag electrodes are the least stable and can only withstand an applied bias of ±1.0 V. As a result, no molecular orbitals can fall in the applied bias window, and the junctions do not rectify. The junction stability increases for M = Au, and the highest occupied molecular orbital (HOMO) dominates charge transport at a positive bias resulting in a positive rectification ratio of 83 at ±1.5 V. The junctions are very stable for M = Pt, but now the LUMO dominates charge transport at a negative bias resulting in a negative rectification ratio of 912 at ±2.5 V. Thus, the limitations of Fermi level pinning can be bypassed by a judicious choice of the bottom electrode material, making it possible to access selectively HOMO- or LUMO-based charge transport and, as shown here, associated reversal of rectification.

Long-Range Charge Transport in Diazonium-Based Single-Molecule Junctions

Thin layers of cobalt and ruthenium polypyridyl-oligomers with thicknesses between 2 and 8 nm were deposited on gold by electrochemical reduction of diazonium salts. A scanning tunneling microscope was used to create single-molecule junctions (SMJs). The charge transport properties of the Au-[Co(tpy)₂]_n-Au (n = 1-4) SMJs do not depend markedly on the oligomer length, have an extremely low attenuation factor (β ∼ 0.19 nm^-1), and do not show a thickness-dependent transition between two mechanisms. Resonant charge transport is proposed as the main transport mechanism. The SMJ conductance decreases by 1 order of magnitude upon changing the metal from Co to Ru. In Au-[Ru(tpy)₂]_n-Au and Au-[Ru(bpy)₃]_n-Au SMJs, a charge transport transition from direct tunneling to hopping is evidenced by a break in the length-dependent β-plot. The three different mechanisms observed are a clear molecular signature on transport in SMJs. Most importantly, these results are in good agreement with those obtained on large-area molecular junctions.

Rectification ratio and direction controlled by temperature in copper phthalocyanine ensemble molecular diodes

Organic diodes and molecular rectifiers are fundamental electronic devices that share one common feature: current rectification ability. Since both present distinct spatial dimensions and working principles, the rectification of organic diodes is usually achieved by interface engineering, while changes in molecular structures commonly control the molecular rectifiers' features. Here, we report on the first observation of temperature-driven inversion of the rectification direction (IRD) in ensemble molecular diodes (EMDs) prepared in a vertical stack configuration. The EMDs are composed of 20 nm thick molecular ensembles of copper phthalocyanine in close contact with one of its fluorinated derivatives. The material interface was found to be responsible for modifying the junction's conduction mechanisms from nearly activationless transport to Poole-Frenkel emission and phonon-assisted tunneling. In this context, the current rectification was found to be dependent on the interplay of such distinct charge transport mechanisms. The temperature has played a crucial role in each charge transport transition, which we have investigated via electrical measurements and band diagram analysis, thus providing the fundamentals on the IRD occurrence. Our findings represent an important step towards simple and rational control of rectification in carbon-based electronic nanodevices.

Dithienylpyrrole Electrografting on a Surface through the Electroreduction of Diazonium Salts

The control of the interface and the adhesion process are key issues for the development of new application based on electrochromic materials. In this work the functionalization of an electrode’s surface through electroreduction of diazonium generated in situ from 4-(2,5-di-thiophen-2-yl-pyrrol-1-yl)-phenylamine (SNS-An) has been proposed. The synthesis of the aniline derivative SNS-An was performed and the electrografting was investigated by cyclic voltammetry on various electrodes. Then the organic thin film was fully characterized by several techniques and XPS analysis confirms the presence of an organic film based on the chemical composition of the starting monomer and allows an estimation of its thickness confirmed by AFM scratching measurements. Depending on the number of electrodeposition cycles, the thickness varies from 2 nm to 10 nm, which corresponds to a few grafted oligomers. In addition, the grafted film showed a good electrochemical stability depending on the scan rates up to 400 V/s and the electrochemical response of the modified electrode towards several redox probes showed that the attached layer acts as a conductive switch. Therefore, the electrode behaves as a barrier to electron transfer when the standard redox potential of the probe is below the layer switching potential, whereas the layer can be considered as transparent towards the electron transfer for redox probes with a redox potential above it.

Grafting of Diazonium Salts on Surfaces: Application to Biosensors

This review is divided into two parts; the first one summarizes the main features of surface modification by diazonium salts with a focus on most recent advances, while the second part deals with diazonium-based biosensors including small molecules of biological interest, proteins, and nucleic acids.

Versatile electrochemical approaches towards the fabrication of molecular electronic devices

We highlight state-of-the-art electrochemical approaches for diazonium electroreduction on various electrodes that may be suitable for flexible molecular electronic junctions.

Nanostructured Mixed Layers of Organic Materials Obtained by Nanosphere Lithography and Electrochemical Reduction of Aryldiazonium Salts

In this work, we have combined nanosphere lithography with electrochemical reduction of aryldiazonium salts to elaborate nanostructured mixed layers of organic materials. The strategy consists first in the deposition of a close-packed hexagonal monolayer of microbeads used as a mask for the electroreduction of a first aryldiazonium salt. After removing the beads, an ultrathin organic layer with holes remains. Then, a second aryldiazonium salt is electrochemically reduced selectively inside the holes. The relative thickness of the two deposited materials can be changed, leading to mixed layers of different topographies. Moreover, using diazoniums with complementary redox properties, a modified bifunctional electrode acting as a filter for electron transfer with a low potential gap has been obtained. Such layers are similar to low-band-gap organic semiconductors that can be easily n or p doped. Despite this analogy, the oxidation and reduction of redox probes in solution on such nanostructured surfaces occur on completely separated areas of the mixed layer.

Energy Level Alignment in Molecular Tunnel Junctions by Transport and Spectroscopy: Self-Consistency for the Case of Alkyl Thiols and Dithiols on Ag, Au, and Pt Electrodes

We report here an extensive study of transport and electronic structure of molecular junctions based on alkyl thiols (CnT; n = 7, 8, 9, 10, 12) and dithiols (CnDT; n = 8, 9, 10) with various lengths contacted with different metal electrodes (Ag, Au, Pt). The dependence of the low-bias resistance (R) on contact work function indicates that transport is HOMO-assisted (p-type transport). Analysis of the current-voltage (I-V) characteristics for CnT and CnDT tunnel junctions with the analytical single-level model (SLM) provides both the HOMO-Fermi energy offset ε_h^trans and the average molecule-electrode coupling (Γ) as a function of molecular length (n), electrode work function (Φ), and the number of chemical contacts (one or two). The SLM analysis reveals a strong Fermi level (E_F) pinning effect in all the junctions, i.e., ε_h^trans changes very little with n, Φ, and the number of chemical contacts, but Γ depends strongly on these variables. Significantly, independent measurements of the HOMO-Fermi level offset (ε_h^UPS) by ultraviolet photoelectron spectroscopy (UPS) for CnT and CnDT SAMs agree remarkably well with the transport-estimated ε_h^trans. This result provides strong evidence for hole transport mediated by localized HOMO states at the Au-thiol interface, and not by the delocalized σ states in the C-C backbones, clarifying a long-standing issue in molecular electronics. Our results also substantiate the application of the single-level model for quantitative, unified understanding of transport in benchmark molecular junctions.

Charge injection and transport properties of large area organic junctions based on aryl thin films covalently attached to a multilayer graphene electrode

The quantum interaction between molecules and electrode materials at molecule/electrode interfaces is a major ingredient in the electron transport properties of organic junctions. Driven by the coupling strength between the two materials, it results mainly in the broadening and energy shift of the interacting molecular orbitals. Using new electrode materials, such as the recently developed semi-conducting two-dimensional nanomaterials, has become a significant advancement in the field of molecular/organic electronics that opens new possibilities for controlling the interfacial electronic properties and thus the charge injection properties. In this article, we report the use of atomically thin two-dimensional multilayer graphene films as the base electrode in organic junctions with a vertical architecture. The interfacial electronic structure dominated by the covalent bonding between bis-thienyl benzene diazonium-based molecules and the multilayer graphene electrode has been probed by ultraviolet photoelectron spectroscopy and the results are compared with those obtained on junctions with standard Au electrodes. Room temperature injection properties of such interfaces have also been explored by electron transport measurements. We find that, despite strong variations of the density of states, the Fermi energy and the injection barriers, both organic junctions with Au base electrodes and multilayer graphene base electrodes show similar electronic responses. We explain this observation by the strong orbital coupling occurring at the bottom electrode/bis-thienyl benzene molecule interface and by the pinning of the hybridized molecular orbitals.

Why one can expect large rectification in molecular junctions based on alkane monothiols and why rectification is so modest

Many attempts to obtain high current rectification ratios (RRs) in molecular electronics are triggered by a potentiometer rule argument, which predicts that a strongly asymmetric location of the dominant molecular orbital yields large RR-values. Invoking this argument, molecular junctions based on alkane monothiols (CnT) can be expected to exhibit high RRs; the HOMO of these molecules is localized on the thiol terminal group bonded to one electrode. The extensive current-voltage (I-V) results for CP-AFM (conducting probe atomic force microscope) CnT junctions of various molecular lengths (n = 7, 8, 9, 10, and 12) and different metallic contacts (Ag, Au, and Pt) are consistent with conduction dominated by the HOMO, but the measured RR ∼ 1.5 is much smaller than that predicted by the potentiometer rule framework. Further, the linear shift in the HOMO position with applied bias, γ, which gives rise to rectification, is also smaller than expected, and critically, γ has the opposite sign from potentiometer rule predictions. Companion ab initio OVGF (outer valence Green's function) quantum chemical calculations provide important insight. Namely, a linear Stark shift γm is calculated for the HOMO of CnT molecules for electric field strengths (106-107 V cm-1) typical of molecular junctions, and the sign of γm matches the sign of the experimental γ for junctions derived from transport measurements, suggesting that the Stark effect plays an important role. However, the magnitude of the measured γ is only 10-15% of the computed value γm. We propose that this implies that the contacts are far from optimal; they substantially screen the effect of the applied bias, possibly via molecule-electrode interface states. We predict that, with optimized contacts, the rectification ratios in CnT-based junctions can reach reasonably high values (RR ≈ 500). We believe that Stark shifts and limited current rectification due to non-ideal contacts discussed here for the specific case of alkane monothiol junctions are issues of general interest for molecular electronics that deserve further consideration.

Stable Molecular Diodes Based on π-π Interactions of the Molecular Frontier Orbitals with Graphene Electrodes

In molecular electronics, it is important to control the strength of the molecule-electrode interaction to balance the trade-off between electronic coupling strength and broadening of the molecular frontier orbitals: too strong coupling results in severe broadening of the molecular orbitals while the molecular orbitals cannot follow the changes in the Fermi levels under applied bias when the coupling is too weak. Here, a platform based on graphene bottom electrodes to which molecules can bind via π-π interactions is reported. These interactions are strong enough to induce electronic function (rectification) while minimizing broadening of the molecular frontier orbitals. Molecular tunnel junctions are fabricated based on self-assembled monolayers (SAMs) of Fc(CH₂ )₁₁ X (Fc = ferrocenyl, X = NH₂ , Br, or H) on graphene bottom electrodes contacted to eutectic alloy of gallium and indium top electrodes. The Fc units interact more strongly with graphene than the X units resulting in SAMs with the Fc at the bottom of the SAM. The molecular diodes perform well with rectification ratios of 30-40, and they are stable against bias stressing under ambient conditions. Thus, tunnel junctions based on graphene with π-π molecule-electrode coupling are promising platforms to fabricate stable and well-performing molecular diodes.

Nanometric building blocks for robust multifunctional molecular junctions

Much of the motivation for developing molecular electronic devices is the prospect of achieving novel electronic functions by varying molecular structure. We describe a "building block" approach for molecular junctions resulting in one, two or three nanometer-thick molecular layers in a commercially proven junction design. A single layer of anthraquinone between carbon electrodes provides a tunnel device with applications in electronic music, and a second layer of a thiophene derivative yields a molecular rectifier with quite different audio characteristics. A third layer of lithium benzoate produces a redox-active device with possible applications in non-volatile memory devices or on-chip energy storage. The building block approach forms a basis for "rational design" of electronic functions, in which layers of varying structure produce distinct and desirable electronic behaviours.

Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance

In large area molecular junctions, defects are always present and can be caused by impurities and/or defects in the electrode materials and/or SAMs, but how they affect the electrical characteristics of junctions has rarely been studied. Usually, junctions are characterized by two-terminal current–voltage measurements where only the total current across the junction is measured, but with these methods one cannot distinguish how the individual components of the junctions are altered by the defects. Here we show that the roughness of the bottom-electrode is a crucial factor in determining the electrical properties of self-assembled monolayer (SAM)-based junctions. We used potentiodynamic impedance spectroscopy to reveal which components of the junctions are altered by defective bottom electrodes because this method allows for direct determination of all components that impede charge transport in the equivalent circuit of the junctions. We intentionally introduced defects via the roughness of the bottom electrode and found that these defects lower the SAM resistance but they do not alter the capacitance of the SAM or the contact resistance of the junction. In other words, defective junctions can be seen as “leaky capacitors” resulting in an underestimation of the SAM resistance of two orders of magnitude. These results help to improve the interpretation of data generated by SAM-based junctions and explain in part the observed large spread of reported tunneling rates for the same molecules measured across different platforms.

In large area molecular junctions, defects are always present and can be caused by impurities and/or defects in the electrode materials and/or SAMs, but how they affect the electrical characteristics of junctions has rarely been studied.