Thermal doping by vacancy formation in copper sulfide nanocrystal arrays

Critical Review of Cu-Based Hole Transport Materials for Perovskite Solar Cells: From Theoretical Insights to Experimental Validation

Despite the remarkable efficiency of perovskite solar cells (PSCs), long-term stability remains the primary barrier to their commercialization. The prospect of enhancing stability by substituting organic transport layers with suitable inorganic compounds, particularly Cu-based inorganic hole-transport materials (HTMs), holds promise due to their high valence band maximum (VBM) aligning with perovskite characteristics. This review assesses the advantages and disadvantages of these five types of Cu-based HTMs. Although Cu-based binary oxides and chalcogenides face narrow bandgap issues, the "chemical modulation of the valence band" (CMVB) strategy has successfully broadened the bandgap for Cu-based ternary oxides and chalcogenides. However, Cu-based ternary oxides encounter challenges with low mobility, and Cu-based ternary chalcogenides face mismatches in VBM alignment with perovskites. Cu-based binary halides, especially CuI, exhibit excellent properties such as wider bandgap, high mobility, and defect tolerance, but their stability remains a concern. These limitations of single anion compounds are insightfully discussed, offering solutions from the perspective of practical application. Future research can focus on Cu-based composite anion compounds, which merge the advantages of single anion compounds. Additionally, mixed-cation chalcogenides such as CuxM1-xS enable the customization of HTM properties by selecting and adjusting the proportions of cation M.

Application of Scanning Tunneling Microscopy and Spectroscopy in the Studies of Colloidal Quantum Qots

Colloidal quantum dots display remarkable optical and electrical characteristics with the potential for extensive applications in contemporary nanotechnology. As an ideal instrument for examining surface topography and local density of states (LDOS) at an atomic scale, scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) has become indispensable approaches to gain better understanding of their physical properties. This article presents a comprehensive review of the research advancements in measuring the electronic orbits and corresponding energy levels of colloidal quantum dots in various systems using STM and STS. The first three sections introduce the basic principles of colloidal quantum dots synthesis and the fundamental methodology of STM research on quantum dots. The fourth section explores the latest progress in the application of STM for colloidal quantum dot studies. Finally, a summary and prospective is presented.

Facile one-pot iodine gas phase doping on 2D MoS2/CuS FET at room temperature

Electronic devices composed of semiconducting two-dimensional (2D) materials and ultrathin 2D metallic electrode materials, accompanying synergistic interactions and extraordinary properties, are becoming highly promising for future flexible and transparent electronic and optoelectronic device applications. Unlike devices with bulk metal electrode and 2D channel materials, devices with ultrathin 2D electrode and 2D channel are susceptible to chemical reactions in both channel and electrode surface due to the high surface to volume ratio of the 2D structures. However, so far, the effect of doping was primary concerned on the channel component, and there is lack of understanding in terms of how to modulate electrical properties of devices by engineering electrical properties of both the metallic electrode and the semiconducting channel. Here, we propose the novel, one-pot doping of the field-effect transistor (FET) based on 2D molybdenum disulfide (MoS₂) channel and ultrathin copper sulfide (CuS) electrodes under mild iodine gas environment at room temperature, which simultaneously modulates electrical properties of the 2D MoS₂channel and 2D CuS electrode in a facile and cost-effective way. After one-pot iodine doping, effective p-type doping of the channel and electrode was observed, which was shown through decreased off current level, improvedI_on/I_offratio and subthreshold swing value. Our results open up possibility for effectively and conveniently modulating electrical properties of FETs made of various 2D semiconductors and ultrathin contact materials without causing any detrimental damage.

Electromagnetic Interference Shielding with 2D Copper Sulfide

Electronic devices in highly integrated and miniaturized systems demand electromagnetic interference shielding within nanoscale dimensions. Although several ultrathin materials have been proposed, satisfying various requirements such as ultrathin thickness, optical transparency, flexibility, and proper shielding efficiency remains a challenge. Herein, we report an ultrahigh electromagnetic interference (EMI) SSE/t value (>10⁶ dB cm²/g) using a conductive CuS nanosheet with thickness less than 20 nm, which was synthesized at room temperature. We found that the EMI shielding efficiency (EMI SE) of the CuS nanosheet exceeds that of the traditional Cu film in the nanoscale thickness, which is due to high conductivity and the presence of internal dipole structures of the CuS nanosheet that contribute to absorption due to the damping of dipole oscillation. In addition, the CuS nanosheet exhibited high mechanical stability (10⁴ cycles at 3 mm bending radius) and air stability (25 °C, 1 atm), which far exceeded the performance of the Cu nanosheet film. This remarkable performance of nanometer-thick CuS proposes an important pathway toward designing EMI shielding materials for wearable, flexible, and next-generation electronic applications.

Quantum Dot Acceptors in Two-Dimensional Epitaxially Fused PbSe Quantum Dot Superlattices

Oriented attachment of colloidal quantum dots allows the growth of two-dimensional crystals by design, which could have striking electronic properties upon progress on manipulating their conductivity. Here, we explore the origin of doping in square and epitaxially fused PbSe quantum dot superlattices with low-temperature scanning tunneling microscopy and spectroscopy. Probing the density of states of numerous individual quantum dots reveals an electronic coupling between the hole ground states of the quantum dots. Moreover, a small amount of quantum dots shows a reproducible deep level in the band gap, which is not caused by structural defects in the connections but arises from unpassivated sites at the {111} facets. Based on semiconductor statistics, these distinct defective quantum dots, randomly distributed in the superlattice, trap electrons, releasing a concentration of free holes, which is intimately related to the interdot electronic coupling. They act as acceptor quantum dots in the host quantum dot lattice, mimicking the role of dopant atoms in a semiconductor crystal.

High rate capabilities and remarkably cycle-stable flexible pseudocapacitors based on nano-coralloid arrays with sulfide vacancies enhanced Ni-Co-S nanoparticle covering

Both poor electron conductivity and low ion diffusion of electrode materials are two main issues limiting the rate performance of pseudocapacitors. The present work reports the design and fabrication of hierarchically nano-architectured electrodes consisting of sulfide vacancies enhanced Ni-Co-S nanoparticle covering bent nickel nano-forest (BNNF). We propose new insight into vastly increased ion-accessible active sites and fast charge storage/delivery enhanced the reaction kinetics. The Ni-Co-S@BNNF electrode exhibits extremely high rate performance with 90.1% capacity retention from 1 to 20 A g^-1, and even still remains 83.6% capacity at 40 A g^-1, much superior to reported NiCo₂S₄-based electrodes. The high rate performance is attributed to the unique nano-architecture providing increased ion availability of electrochemically active sites and high conductivity for fast electron transport. Especially the electrode achieves remarkable long-term cycle stability with more than 100% initial capacity value after 5000 cycles at 5 A g^-1and exhibits excellent cycle reversibility even at 20 A g^-1. Goog cycle stability should be attributed to the sulfide vacancies in Ni-Co-S nano-branches and the electrode architecture sustaining structural strain during fast redox reactions. An asymmetric pseudocapacitor applying such electrode achieves a high energy density of 99.9 W h kg^-1and exhibits superior cycling stability at a high current density of 20 A g^-1. This study underscores the potential importance of developing nanoarrays covered with highly redox-active materials with increasing ions/charge kinetics for energy storage.

Ni-Doped CuS as an efficient electrocatalyst for the oxygen evolution reaction

Ni-Doped CuS synthesized by a facile solvothermal method is demonstrated as an efficient oxygen evolution catalyst in alkaline medium.

The influence of conjugated alkynyl(aryl) surface groups on the optical properties of silicon nanocrystals: photoluminescence through in-gap states

Developing new methods, other than size and shape, for controlling the optoelectronic properties of semiconductor nanocrystals is a highly desired target. Here we demonstrate that the photoluminescence (PL) of silicon nanocrystals (SiNCs) can be tuned in the range 685-800 nm solely via surface functionalization with alkynyl(aryl) (phenylacetylene, 2-ethynylnaphthalene, 2-ethynyl-5-hexylthiophene) surface groups. Scanning tunneling microscopy/spectroscopy on single nanocrystals revealed the formation of new in-gap states adjacent to the conduction band edge of the functionalized SiNCs. PL red-shifts were attributed to emission through these in-gap states, which reduce the effective band gap for the electron-hole recombination process. The observed in-gap states can be associated with new interface states formed via (-Si-C≡C-) bonds in combination with conjugated molecules as indicated by ab initio calculations. In contrast to alkynyl(aryl)s, the formation of in-gap states and shifts in PL maximum of the SiNCs were not observed with aryl (phenyl, naphthalene, 2-hexylthiophene) and alkynyl (1-dodecyne) surface groups. These outcomes show that surface functionalization with alkynyl(aryl) molecules is a valuable tool to control the electronic structure and optical properties of SiNCs via tuneable interface states, which may enhance the performance of SiNCs in semiconductor devices.

Ultrasmall Pb:Ag2 S Quantum Dots with Uniform Particle Size and Bright Tunable Fluorescence in the NIR-II Window

Ag₂ S quantum dots (QDs) are well-known near-infrared fluorophores and have attracted great interest in biomedical labeling and imaging in the past years. However, their photoluminescence efficiency is hard to compete with Cd-, Pb-based QDs. The high Ag⁺ mobility in Ag₂ S crystal, which causes plenty of cation deficiency and crystal defects, may be responsible mainly for the low photoluminescence quantum yield (PLQY) of Ag₂ S QDs. Herein, a cation-doping strategy is presented via introducing a certain dosage of transition metal Pb²⁺ ions into Ag₂ S nanocrystals to mitigate this intrinsic shortcoming. The Pb-doped Ag₂ S QDs (designated as Pb:Ag₂ S QDs) present a renovated crystal structure and significantly enhanced optical performance. Moreover, by simply adjusting the levels of Pb doping in the doped nanocrystals, Pb:Ag₂ S QDs with bright emission (PLQY up to 30.2%) from 975 to 1242 nm can be prepared without altering the ultrasmall particle size (≈2.7-2.8 nm). Evidently, this cation-doping strategy facilitates both the renovation of crystal structure of Ag₂ S QDs and modulation of their optical properties.

Active Manipulation of NIR Plasmonics: the Case of Cu2-xSe through Electrochemistry

Active control of nanocrystal optical and electrical properties is crucial for many of their applications. By electrochemical (de)lithiation of Cu_2-xSe, a highly doped semiconductor, dynamic and reversible manipulation of its NIR plasmonics has been achieved. Spectroelectrochemistry results show that NIR plasmon red-shifted and reduced in intensity during lithiation, which can be reversed with perfect on-off switching over 100 cycles. Electrochemical impedance spectroscopy reveals that a Faradaic redox process during Cu_2-xSe (de)lithiation is responsible for the optical modulation, rather than simple capacitive charging. XPS analysis identifies a reversible change in the redox state of selenide anion but not copper cation, consistent with DFT calculations. Our findings open up new possibilities for dynamical manipulation of vacancy-induced surface plasmon resonances and have important implications for their use in NIR optical switching and functional circuits.

On the influence of multiple cations on the in-gap states and phototransport properties of iodide-based halide perovskites

In-gap states in solar cell absorbers that are recombination centers determine the cell's photovoltaic performance.

Formation of Colloidal Copper Indium Sulfide Nanosheets by Two-Dimensional Self-Organization

Colloidal 2D semiconductor nanosheets (NSs) are an interesting new class of materials due to their unique properties. However, synthesis of these NSs is challenging, and synthesis procedures for materials other than the well-known Pb- and Cd-chalcogenides are still underdeveloped. In this paper, we present a new approach to make copper indium sulfide (CIS) NSs and study their structural and optical properties. The CIS NSs form via self-organization and oriented attachment of 2.5 nm chalcopyrite CuInS2 nanocrystals (NCs), yielding triangular- and hexagonal-shaped NSs with a thickness of ∼3 nm and lateral dimensions ranging from 20 to 1000 nm. The self-organization is induced by fast cation extraction, leading to attractive dipolar interactions between the NCs. Primary amines play a crucial role in the formation of the CIS NSs, both by forming in situ the cation extracting agent, and by preventing the attachment of NCs to the top and bottom facets of the NSs. Moreover, DFT calculations reveal that the amines are essential to stabilize the covellite crystal structure of the product CIS NSs. The NSs are indium-deficient and the off-stoichiometry gives rise to a plasmon resonance in the NIR spectral window.

Size-dependent donor and acceptor states in codoped Si nanocrystals studied by scanning tunneling spectroscopy

The electrical and optical properties of semiconductor nanocrystals (NCs) can be controlled, in addition to size and shape, by doping. However, such a process is not trivial in NCs due to the high formation energy of dopants there. Nevertheless, it has been shown theoretically that in the case of B and P (acceptor/donor) codoped Si-NCs the formation energy is reduced relative to that of single type doping. Previous comprehensive measurements on ensembles of such codoped Si-NCs have pointed to the presence of donor and acceptor states within the energy gap. However, such a conjecture has not been directly verified previously. Following that, we investigate here the electronic properties of B and P codoped Si-NCs via Scanning Tunneling Spectroscopy. We monitored the quantum confinement effect in this system, for which the energy gap changed from ∼1.4 eV to ∼1.8 eV with the decrease of NC diameter from 8.5 to 3.5 nm. Importantly, all spectra showed two in-gap band-states, one close to the conduction band edge and the other to the valence band edge, which we attribute to the P and B dopant levels, respectively. The energy separation between these dopants states decrease monotonically with increasing NC diameter, in parallel to the decrease of the conduction-to-valence bands separation. A fundamental quantity that is derived directly for these Si-NCs is the intrinsic like position of the Fermi energy, a non-trivial result that is very relevant for understanding the system. Following the above results we suggest an explanation for the character and the origin of the dopants bands.

Diversified copper sulfide (Cu2-xS) micro-/nanostructures: a comprehensive review on synthesis, modifications and applications

As a significant metal chalcogenide, copper sulfide (Cu_2-xS, 0 < x < 1), with a unique semiconducting and nontoxic nature, has received significant attention over the past few decades. Extensive investigations have been employed to the various Cu_2-xS micro-/nanostructures owing to their excellent optoelectronic behavior, potential thermoelectric properties, and promising biomedical applications. As a result, micro-/nanostructured Cu_2-xS with well-controlled morphologies, sizes, crystalline phases, and compositions have been rationally synthesized and applied in the fields of photocatalysis, energy conversion, in vitro biosensing, and in vivo imaging and therapy. However, a comprehensive review on diversified Cu_2-xS micro-/nanostructures is still lacking; therefore, there is an imperative need to thoroughly highlight the new advances made in function-directed Cu_2-xS-based nanocomposites. In this review, we have summarized the important progress made in the diversified Cu_2-xS micro-/nanostructures, including that in the synthetic strategies for the preparation of 0D, 1D, 2D, and 3D micro-/nanostructures (including polyhedral, hierarchical, hollow architectures, and superlattices) and in the development of modified Cu_2-xS-based composites for enhanced performance, as well as their various applications. Furthermore, the present issues and promising research directions are briefly discussed.

Size Dependence of Doping by a Vacancy Formation Reaction in Copper Sulfide Nanocrystals

Doping of nanocrystals (NCs) is a key, yet underexplored, approach for tuning of the electronic properties of semiconductors. An important route for doping of NCs is by vacancy formation. The size and concentration dependence of doping was studied in copper(I) sulfide (Cu₂ S) NCs through a redox reaction with iodine molecules (I₂ ), which formed vacancies accompanied by a localized surface plasmon response. X-ray spectroscopy and diffraction reveal transformation from Cu₂ S to Cu-depleted phases, along with CuI formation. Greater reaction efficiency was observed for larger NCs. This behavior is attributed to interplay of the vacancy formation energy, which decreases for smaller sized NCs, and the growth of CuI on the NC surface, which is favored on well-defined facets of larger NCs. This doping process allows tuning of the plasmonic properties of a semiconductor across a wide range of plasmonic frequencies by varying the size of NCs and the concentration of iodine. Controlled vacancy doping of NCs may be used to tune and tailor semiconductors for use in optoelectronic applications.

Phonon-Plasmon Coupling and Active Cu Dopants in Indium Arsenide Nanocrystals Studied by Resonance Raman Spectroscopy

Doping of semiconductor nanocrystals is an emerging tool to control their properties and has recently received increased interest as the means to characterize the impurities and their effect on the electronic characteristics of the nanocrystal evolve. We present a temperature-dependent Raman scattering study of Cu-doped InAs nanocrystals observing changes in the relative scattering intensities of the different modes upon increased dopant concentrations. First, the longitudinal optical (LO) phonon overtone mode is suppressed, indicating weakening of the coupling strength related to the effect of screening by the free electrons. Second, the transverse optical (TO) mode is relatively enhanced compared to the LO mode, which is attributed to the appearance of a coupled phonon-plasmon mode analogous to observations for n-type doped bulk InAs. These signatures indicate that the Cu impurities serve as active dopants and occupy an impurity-related pseudo sub-band akin to the heavy doping limit.

Compound Copper Chalcogenide Nanocrystals

This review captures the synthesis, assembly, properties, and applications of copper chalcogenide NCs, which have achieved significant research interest in the last decade due to their compositional and structural versatility. The outstanding functional properties of these materials stems from the relationship between their band structure and defect concentration, including charge carrier concentration and electronic conductivity character, which consequently affects their optoelectronic, optical, and plasmonic properties. This, combined with several metastable crystal phases and stoichiometries and the low energy of formation of defects, makes the reproducible synthesis of these materials, with tunable parameters, remarkable. Further to this, the review captures the progress of the hierarchical assembly of these NCs, which bridges the link between their discrete and collective properties. Their ubiquitous application set has cross-cut energy conversion (photovoltaics, photocatalysis, thermoelectrics), energy storage (lithium-ion batteries, hydrogen generation), emissive materials (plasmonics, LEDs, biolabelling), sensors (electrochemical, biochemical), biomedical devices (magnetic resonance imaging, X-ray computer tomography), and medical therapies (photochemothermal therapies, immunotherapy, radiotherapy, and drug delivery). The confluence of advances in the synthesis, assembly, and application of these NCs in the past decade has the potential to significantly impact society, both economically and environmentally.

Liquid-like cationic sub-lattice in copper selenide clusters

Super-ionic solids, which exhibit ion mobilities as high as those in liquids or molten salts, have been employed as solid-state electrolytes in batteries, improved thermoelectrics and fast-ion conductors in super-capacitors and fuel cells. Fast-ion transport in many of these solids is supported by a disordered, 'liquid-like' sub-lattice of cations mobile within a rigid anionic sub-lattice, often achieved at high temperatures or pressures via a phase transition. Here we show that ultrasmall clusters of copper selenide exhibit a disordered cationic sub-lattice under ambient conditions unlike larger nanocrystals, where Cu⁺ ions and vacancies form an ordered super-structure similar to the bulk solid. The clusters exhibit an unusual cationic sub-lattice arrangement wherein octahedral sites, which serve as bridges for cation migration, are stabilized by compressive strain. The room-temperature liquid-like nature of the Cu⁺ sub-lattice combined with the actively tunable plasmonic properties of the Cu₂Se clusters make them suitable as fast electro-optic switches.

Pulsed Lasers Employing Solution-Processed Plasmonic Cu3- x P Colloidal Nanocrystals

A new approach to synthesize self-doped colloidal Cu3-x P NCs with controlled size and localized surface plasmon resonance absorption is reported. These Cu3-x P NCs show ultrafast exciton dynamics and huge optical nonlinearities due to plasmonic resonances, which afford the first demonstration of plasmonic Cu3-x P NCs as simple, effective, and solution-processed nonlinear absorbers for high-energy Q-switched fiber laser.

Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.

Cu₂Se and Cu Nanocrystals as Local Sources of Copper in Thermally Activated In Situ Cation Exchange

Among the different synthesis approaches to colloidal nanocrystals, a recently developed toolkit is represented by cation exchange reactions, where the use of template nanocrystals gives access to materials that would be hardly attainable via direct synthesis. Besides, postsynthetic treatments, such as thermally activated solid-state reactions, represent a further flourishing route to promote finely controlled cation exchange. Here, we report that, upon in situ heating in a transmission electron microscope, Cu2Se or Cu nanocrystals deposited on an amorphous solid substrate undergo partial loss of Cu atoms, which are then engaged in local cation exchange reactions with Cu "acceptor" phases represented by rod- and wire-shaped CdSe nanocrystals. This thermal treatment slowly transforms the initial CdSe nanocrystals into Cu(2-x)Se nanocrystals, through the complete sublimation of Cd and the partial sublimation of Se atoms. Both Cu "donor" and "acceptor" particles were not always in direct contact with each other; hence, the gradual transfer of Cu species from Cu2Se or metallic Cu to CdSe nanocrystals was mediated by the substrate and depended on the distance between the donor and acceptor nanostructures. Differently from what happens in the comparably faster cation exchange reactions performed in liquid solution, this study shows that slow cation exchange reactions can be performed at the solid state and helps to shed light on the intermediate steps involved in such reactions.

Scanning probe microscopy and spectroscopy of colloidal semiconductor nanocrystals and assembled structures

Colloidal semiconductor nanocrystals become increasingly important in materials science and technology, due to their optoelectronic properties that are tunable by size. The measurement and understanding of their energy levels is key to scientific and technological progress. Here we review how the confined electronic orbitals and related energy levels of individual semiconductor quantum dots have been measured by means of scanning tunneling microscopy and spectroscopy. These techniques were originally developed for flat conducting surfaces, but they have been adapted to investigate the atomic and electronic structure of semiconductor quantum dots. We compare the results obtained on colloidal quantum dots with those on comparable solid-state ones. We also compare the results obtained with scanning tunneling spectroscopy with those of optical spectroscopy. The first three sections provide an introduction to colloidal quantum dots, and a theoretical basis to be able to understand tunneling spectroscopy on dots attached to a conducting surface. In sections 4 and 5 , we review the work performed on lead-chalcogenide nanocrystals and on colloidal quantum dots and rods of II-VI compounds, respectively. In section 6 , we deal with colloidal III-V nanocrystals and compare the results with their self-assembled counter parts. In section 7 , we review the work on other types of semiconductor quantum dots, especially on Si and Ge nanocrystals.

Influence of dopants Cu, Ga, In, Hg on the electronic structure of CdnSn (n = 6, 15) clusters – a DFT study

The influence of dopants on the electronic structure and the optical properties of doped Cdn_−yXySn (n = 6, 15; y = 1, 2, 4) clusters, studied using DFT and TDDFT methods.

From Impurity Doping to Metallic Growth in Diffusion Doping: Properties and Structure of Silver-Doped InAs Nanocrystals

Tuning of the electronic properties of presynthesized colloidal semiconductor nanocrystals (NCs) by doping plays a key role in the prospect of implementing them in printed electronics devices such as transistors and photodetectors. While such impurity doping reactions have already been introduced, the understanding of the doping process, the nature of interaction between the impurity and host atoms, and the conditions affecting the solubility limit of impurities in nanocrystals are still unclear. Here, we used a postsynthesis diffusion-based doping reaction to introduce Ag impurities into InAs NCs. Optical absorption spectroscopy and analytical inductively coupled plasma mass spectroscopy (ICP-MS) were used to present a two-stage doping model consisting of a "doping region" and a "growth region", depending on the impurity to NC ratio in the reaction vessel. X-ray absorption fine-structure (XAFS) spectroscopy was employed to determine the impurity location and correlate between the structural and electronic properties for different sizes of InAs NCs and dopant concentrations. The resulting structural model describes a heterogeneous system where the impurities initially dope the NC, by substituting for In atoms near the surface of the NC, until the "solubility limit" is reached, after which the rapid growth and formation of metallic structures are identified.

Copper Sulfide Nanocrystal Level Structure and Electrochemical Functionality towards Sensing Applications

The level structure of copper sulfide nanocrystals of different sizes was investigated by correlating scanning tunneling spectroscopy and cyclic voltammetry data in relation to sensing applications. Upon oxidation of Cu2 S nanocrystals in the low-chalcocite phase, correlated changes are detected by both methods. The cyclic voltammetry oxidation peak of Cu(1+) down shifts, while in-gap states, adjacent to the valence-band edge, appeared in the tunneling spectra. These changes are attributed to Cu vacancy formation leading to a Cu depleted phase of the nanocrystals. The relevance of the oxidation to the use of copper sulfide nanocrystals in hydrogen peroxide sensing was also addressed, showing that upon oxidation the sensitivity vanishes. These findings bare significance to the use of copper sulfide nanocrystals in glucose sensing applications.

Measuring Ligand-Dependent Transport in Nanopatterned PbS Colloidal Quantum Dot Arrays Using Charge Sensing

Colloidal quantum dot arrays with long organic ligands have better packing order than those with short ligands but are highly resistive, making low-bias conductance measurements impossible with conventional two-probe techniques. We use an integrated charge sensor to study transport in weakly coupled arrays in the low-bias regime, and we nanopattern the arrays to minimize packing disorder. We present the temperature and field dependence of the resistance for nanopatterned oleic-acid and n-butylamine-capped PbS arrays, measuring resistances as high as 10(18) Ω. We find that the conduction mechanism changes from nearest neighbor hopping in oleic-acid-capped PbS dots to Mott's variable range hopping in n-butylamine capped PbS dots. Our results can be understood in terms of a change in the interdot coupling strength or a change in density of trap states and highlight the importance of the capping ligand on charge transport through colloidal quantum dot arrays.

Cosolvent approach for solution-processable electronic thin films

Low-temperature solution-processable electronic materials are of considerable interest for large-area, low-cost electronics, thermoelectrics, and photovoltaics. Using a soluble precursor and suitable solvent to formulate a semiconductor ink is essential for large-area fabrication of semiconductor thin films. To date, it has been shown that hydrazine can be used as a versatile solvent to process a wide range of inorganic semiconductors. However, hydrazine is highly toxic and not suitable for large-scale manufacturing. Here we report a binary mixed solvent of amine and thiol for effective dispersion and dissolution of a large number of inorganic semiconductors including Cu2S, Cu2Se, In2S3, In2Se3, CdS, SnSe, and others. The mixed solvent is significantly less toxic and safer than hydrazine, while at the same time offering the comparable capability of formulating diverse semiconductor ink with a concentration as high as >200 mg/mL. We further show that such ink material can be readily processed into high-performance semiconducting thin films (Cu2S and Cu2Se) with the highest room-temperature conductivity among solution-based materials. Furthermore, we show that complex semiconductor alloys with tunable band gaps, such as CuIn(S(x)Se(1-x))2 (0 ≤ x ≤ 1), can also be readily prepared by simply mixing Cu2S, Cu2Se, In2S3, and In2Se3 ink solutions in a proper ratio. Our study outlines a general strategy for the formulation of inorganic semiconductor ink for low-temperature processing of large-area electronic thin films on diverse substrates and can greatly impact diverse areas including flexible electronics, thermoelectrics, and photovoltaics.

Tuning carrier mobilities and polarity of charge transport in films of CuInSe(x)S(2-x) quantum dots

CuInSe(x)S(2-x) quantum dot field-effect transistors show p-type, n-type, and ambipolar behaviors with carrier mobilities up to 0.03 cm(2) V(-1) s(-1). Although some design rules from studies of cadmium and lead containing quantum dots can be applied, remarkable differences are observed including a strong gating effect in as-synthesized nanocyrstals with long ligands.

Prospects of nanoscience with nanocrystals

Colloidal nanocrystals (NCs, i.e., crystalline nanoparticles) have become an important class of materials with great potential for applications ranging from medicine to electronic and optoelectronic devices. Today's strong research focus on NCs has been prompted by the tremendous progress in their synthesis. Impressively narrow size distributions of just a few percent, rational shape-engineering, compositional modulation, electronic doping, and tailored surface chemistries are now feasible for a broad range of inorganic compounds. The performance of inorganic NC-based photovoltaic and light-emitting devices has become competitive to other state-of-the-art materials. Semiconductor NCs hold unique promise for near- and mid-infrared technologies, where very few semiconductor materials are available. On a purely fundamental side, new insights into NC growth, chemical transformations, and self-organization can be gained from rapidly progressing in situ characterization and direct imaging techniques. New phenomena are constantly being discovered in the photophysics of NCs and in the electronic properties of NC solids. In this Nano Focus, we review the state of the art in research on colloidal NCs focusing on the most recent works published in the last 2 years.

Highly conductive Cu2-xS nanoparticle films through room-temperature processing and an order of magnitude enhancement of conductivity via electrophoretic deposition

A facile room-temperature method for assembling colloidal copper sulfide (Cu2-xS) nanoparticles into highly electrically conducting films is presented. Ammonium sulfide is utilized for connecting the nanoparticles via ligand removal, which transforms the as-deposited insulating films into highly conducting films. Electronic properties of the treated films are characterized with a combination of Hall effect measurements, field-effect transistor measurements, temperature-dependent conductivity measurements, and capacitance-voltage measurements, revealing their highly doped p-type semiconducting nature. The spin-cast nanoparticle films have carrier concentration of ∼ 10(19) cm(-3), Hall mobilities of ∼ 3 to 4 cm(2) V(-1) s(-1), and electrical conductivities of ∼ 5 to 6 S · cm(-1). Our films have hole mobilities that are 1-4 orders of magnitude higher than hole mobilities previously reported for heat-treated nanoparticle films of HgTe, InSb, PbS, PbTe, and PbSe. We show that electrophoretic deposition (EPD) as a method for nanoparticle film assembly leads to an order of magnitude enhancement in film conductivity (∼ 75 S · cm(-1)) over conventional spin-casting, creating copper sulfide nanoparticle films with conductivities comparable to bulk films formed through physical deposition methods. The X-ray diffraction patterns of the Cu2-xS films, with and without ligand removal, match the Djurleite phase (Cu(1.94)S) of copper sulfide and show that the nanoparticles maintain finite size after the ammonium sulfide processing. The high conductivities reported are attributed to better interparticle coupling through the ammonium sulfide treatment. This approach presents a scalable room-temperature route for fabricating highly conducting nanoparticle assemblies for large-area electronic and optoelectronic applications.

Hollow and concave nanoparticles via preferential oxidation of the core in colloidal core/shell nanocrystals

Hollow and concave nanocrystals find applications in many fields, and their fabrication can follow different possible mechanisms. We report a new route to these nanostructures that exploits the oxidation of Cu(2-x)Se/Cu(2-x)S core/shell nanocrystals with various etchants. Even though the Cu(2-x)Se core is encased in a thick Cu(2-x)S shell, the initial effect of oxidation is the creation of a void in the core. This is rationalized in terms of diffusion of Cu(+) ions and electrons from the core to the shell (and from there to the solution). Differently from the classical Kirkendall effect, which entails an imbalance between in-diffusion and out-diffusion of two different species across an interface, the present mechanism can be considered as a limiting case of such effect and is triggered by the stronger tendency of Cu(2-x)Se over Cu(2-x)S toward oxidation and by fast Cu(+) diffusion in copper chalcogenides. As the oxidation progresses, expansion of the inner void erodes the entire Cu(2-x)Se core, accompanied by etching and partial collapse of the shell, yielding Cu(2-x)S(y)Se(1-y) concave particles.