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Li Y, Zhang Y, Yan X, Yuan X, Zhang J, Wu C, Zha C, Zhang X. Topological photonic crystal nanowire array laser with bulk states. OPTICS EXPRESS 2024; 32:14521-14531. [PMID: 38859394 DOI: 10.1364/oe.517236] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Accepted: 03/21/2024] [Indexed: 06/12/2024]
Abstract
A topological photonic crystal InGaAsP/InP core-shell nanowire array laser with bulk states operating in the 1550 nm band is proposed and simulated. By optimizing the structure parameters, high Q factor of 1.2 × 105 and side-mode suppression ratio of 13.2 dB are obtained, which are 28.6 and 4.6 times that of a uniform nanowire array, respectively. The threshold and maximum output are 17% lower and 613% higher than that of the uniform nanowire array laser, respectively, due to the narrower nanowire slits and stronger optical confinement. In addition, a low beam divergence angle of 2° is obtained due to the topological protection. This work may pave the way for the development of high-output, low-threshold, low-beam-divergence nanolasers.
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2
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Badawy G, Bakkers EPAM. Electronic Transport and Quantum Phenomena in Nanowires. Chem Rev 2024; 124:2419-2440. [PMID: 38394689 PMCID: PMC10941195 DOI: 10.1021/acs.chemrev.3c00656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Revised: 01/26/2024] [Accepted: 02/08/2024] [Indexed: 02/25/2024]
Abstract
Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.
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Affiliation(s)
- Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P. A. M. Bakkers
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
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3
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Li Y, Yan X, Zhang X, Ren X. Topological photonic crystal nanowire array laser with edge states. OPTICS EXPRESS 2023; 31:29096-29106. [PMID: 37710716 DOI: 10.1364/oe.497750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Accepted: 08/08/2023] [Indexed: 09/16/2023]
Abstract
A topological photonic crystal InGaAsP/InP core-shell nanowire array laser operating in the 1550 nm wavelength band is proposed and simulated. The structure is composed of an inner topological nontrivial photonic crystal and outer topological trivial photonic crystal. For a nanowire with height of 8 µm, high quality factor of 4.7 × 104 and side-mode suppression ratio of 11 dB are obtained, approximately 32.9 and 5.5 times that of the uniform photonic crystal nanowire array, respectively. Under optical pumping, the topological nanowire array laser exhibits a threshold 27.3% lower than that of the uniform nanowire array laser, due to the smaller nanowire slit width and stronger optical confinement. Moreover, the topological NW laser exhibits high tolerence to manufacturing errors. This work may pave the way for the development of low-threshold single-mode high-robustness nanolasers.
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4
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Wong WW, Wang N, Esser BD, Church SA, Li L, Lockrey M, Aharonovich I, Parkinson P, Etheridge J, Jagadish C, Tan HH. Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers. ACS NANO 2023; 17:15065-15076. [PMID: 37449797 DOI: 10.1021/acsnano.3c04234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic circuitry. Specifically, III-V materials that are of technological relevance have attracted considerable attention. However, traditional microcavity laser fabrication techniques, including top-down etching and bottom-up catalytic growth, often result in undesirable cavity geometries with poor scalability and reproducibility. Here, we utilize the selective area epitaxy method to deterministically engineer thousands of microring lasers on a single chip. Specifically, we realize a catalyst-free, epitaxial growth of a technologically critical material, InAsP/InP, in a ring-like cavity with embedded multi-quantum-well heterostructures. We elucidate a detailed growth mechanism and leverage the capability to deterministically control the adatom diffusion lengths on selected crystal facets to reproducibly achieve ultrasmooth cavity sidewalls. The engineered devices exhibit a tunable emission wavelength in the telecommunication O-band and show low-threshold lasing with over 80% device efficacy across the chip. Our work marks a significant milestone toward the implementation of a fully integrated III-V materials platform for next-generation high-density integrated photonic and optoelectronic circuits.
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Affiliation(s)
- Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Bryan D Esser
- Monash Centre for Electron Microscopy, Monash University, Clayton, Victoria 3800, Australia
| | - Stephen A Church
- Photon Science Institute and Department of Physics and Astronomy, School of Natural Sciences, The University of Manchester, Manchester M13 9PL, United Kingdom
| | - Li Li
- Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Mark Lockrey
- Microstructural Analysis Unit, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Patrick Parkinson
- Photon Science Institute and Department of Physics and Astronomy, School of Natural Sciences, The University of Manchester, Manchester M13 9PL, United Kingdom
| | - Joanne Etheridge
- Monash Centre for Electron Microscopy, Monash University, Clayton, Victoria 3800, Australia
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia
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5
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Al-Abri R, Al Amairi N, Church S, Byrne C, Sivakumar S, Walton A, Magnusson MH, Parkinson P. Sub-Picosecond Carrier Dynamics Explored using Automated High-Throughput Studies of Doping Inhomogeneity within a Bayesian Framework. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300053. [PMID: 37093214 DOI: 10.1002/smll.202300053] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2023] [Revised: 03/27/2023] [Indexed: 05/03/2023]
Abstract
Bottom-up production of semiconductor nanomaterials is often accompanied by inhomogeneity resulting in a spread in electronic properties which may be influenced by the nanoparticle geometry, crystal quality, stoichiometry, or doping. Using photoluminescence spectroscopy of a population of more than 11 000 individual zinc-doped gallium arsenide nanowires, inhomogeneity is revealed in, and correlation between doping and nanowire diameter by use of a Bayesian statistical approach. Recombination of hot-carriers is shown to be responsible for the photoluminescence lineshape; by exploiting lifetime variation across the population, hot-carrier dynamics is revealed at the sub-picosecond timescale showing interband electronic dynamics. High-throughput spectroscopy together with a Bayesian approach are shown to provide unique insight in an inhomogeneous nanomaterial population, and can reveal electronic dynamics otherwise requiring complex pump-probe experiments in highly non-equilibrium conditions.
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Affiliation(s)
- Ruqaiya Al-Abri
- Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Nawal Al Amairi
- Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Stephen Church
- Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Conor Byrne
- Department of Chemistry and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Sudhakar Sivakumar
- Department of Physics and NanoLund, Lund University, Box 118, Lund, SE-221 00, Sweden
| | - Alex Walton
- Department of Chemistry and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Martin H Magnusson
- Department of Physics and NanoLund, Lund University, Box 118, Lund, SE-221 00, Sweden
| | - Patrick Parkinson
- Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
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6
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Schmiedeke P, Panciera F, Harmand JC, Travers L, Koblmüller G. Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale. NANOSCALE ADVANCES 2023; 5:2994-3004. [PMID: 37260482 PMCID: PMC10228496 DOI: 10.1039/d3na00135k] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Accepted: 05/02/2023] [Indexed: 06/02/2023]
Abstract
Nanowires (NWs) offer unique opportunities for tuning the properties of III-V semiconductors by simultaneously controlling their nanoscale dimensions and switching their crystal phase between zinc-blende (ZB) and wurtzite (WZ). While much of this control has been enabled by direct, forward growth, the reverse reaction, i.e., crystal decomposition, provides very powerful means to further tailor properties towards the ultra-scaled dimensional level. Here, we use in situ transmission electron microscopy (TEM) to investigate the thermal decomposition kinetics of clean, ultrathin GaAs NWs and the role of distinctly different crystal polytypes in real-time and on the atomic scale. The whole process, from the NW growth to the decomposition, is conducted in situ without breaking vacuum to maintain pristine crystal surfaces. Radial decomposition occurs much faster for ZB- compared to WZ-phase NWs, due to the development of nano-faceted sidewall morphology and sublimation along the entire NW length. In contrast, WZ NWs form single-faceted, vertical sidewalls with decomposition proceeding only via step-flow mechanism from the NW tip. Concurrent axial decomposition is generally faster than the radial process, but is significantly faster (∼4-fold) in WZ phase, due to the absence of well-defined facets at the tip of WZ NWs. The results further show quantitatively the influence of the NW diameter on the sublimation and step-flow decomposition velocities elucidating several effects that can be exploited to fine-tune the NW dimensions.
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Affiliation(s)
- Paul Schmiedeke
- Technical University of Munich, Walter Schottky Institute, TUM School of Natural Sciences, Physics Department Garching 85747 Germany
| | - Federico Panciera
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Jean-Christophe Harmand
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Laurent Travers
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Gregor Koblmüller
- Technical University of Munich, Walter Schottky Institute, TUM School of Natural Sciences, Physics Department Garching 85747 Germany
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7
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Lozano MS, Gómez VJ. Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires. NANOSCALE ADVANCES 2023; 5:1890-1909. [PMID: 36998660 PMCID: PMC10044505 DOI: 10.1039/d2na00956k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Accepted: 03/06/2023] [Indexed: 06/19/2023]
Abstract
Crystal phase quantum dots (QDs) are formed during the axial growth of III-V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III-V semiconductor NWs, both zinc blende (ZB) and wurtzite (WZ) crystal phases can coexist. The band structure difference between both crystal phases can lead to quantum confinement. Thanks to the precise control in III-V semiconductor NW growth conditions and the deep knowledge on the epitaxial growth mechanisms, it is nowadays possible to control, down to the atomic level, the switching between crystal phases in NWs forming the so-called crystal phase NW-based QDs (NWQDs). The shape and size of the NW bridge the gap between QDs and the macroscopic world. This review is focused on crystal phase NWQDs based on III-V NWs obtained by the bottom-up vapor-liquid-solid (VLS) method and their optical and electronic properties. Crystal phase switching can be achieved in the axial direction. In contrast, in the core/shell growth, the difference in surface energies between different polytypes can enable selective shell growth. One reason for the very intense research in this field is motivated by their excellent optical and electronic properties both appealing for applications in nanophotonics and quantum technologies.
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Affiliation(s)
- Miguel Sinusia Lozano
- Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
| | - Víctor J Gómez
- Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
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8
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Wei S, Li Z, Murugappan K, Li Z, Zhang F, Saraswathyvilasam AG, Lysevych M, Tan HH, Jagadish C, Tricoli A, Fu L. A Self-Powered Portable Nanowire Array Gas Sensor for Dynamic NO 2 Monitoring at Room Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207199. [PMID: 36502280 DOI: 10.1002/adma.202207199] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Revised: 11/29/2022] [Indexed: 06/17/2023]
Abstract
The fast development of the Internet of Things (IoT) has driven an increasing consumer demand for self-powered gas sensors for real-time data collection and autonomous responses in industries such as environmental monitoring, workplace safety, smart cities, and personal healthcare. Despite intensive research and rapid progress in the field, most reported self-powered devices, specifically NO2 sensors for air pollution monitoring, have limited sensitivity, selectivity, and scalability. Here, a novel photovoltaic self-powered NO2 sensor is demonstrated based on axial p-i-n homojunction InP nanowire (NW) arrays, that overcome these limitations. The optimized innovative InP NW array device is designed by numerical simulation for insights into sensing mechanisms and performance enhancement. Without a power source, this InP NW sensor achieves an 84% sensing response to 1 ppm NO2 and records a limit of detection down to the sub-ppb level, with little dependence on the incident light intensity, even under <5% of 1 sun illumination. Based on this great environmental fidelity, the sensor is integrated into a commercial microchip interface to evaluate its performance in the context of dynamic environmental monitoring of motor vehicle exhaust. The results show that compound semiconductor nanowires can form promising self-powered sensing platforms suitable for future mega-scale IoT systems.
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Affiliation(s)
- Shiyu Wei
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Zhe Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Krishnan Murugappan
- Nanotechnology Research Laboratory, Research School of Chemistry, College of Science, The Australian National University, Canberra, ACT, 2601, Australia
- Commonwealth Scientific and Industrial Research Organisation (CSIRO), Mineral Resources, Private Bag 10, Clayton South, Victoria, 3169, Australia
| | - Ziyuan Li
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Fanlu Zhang
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Aswani Gopakumar Saraswathyvilasam
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Mykhaylo Lysevych
- Australian National Fabrication Facility, The Australian National University, Canberra, ACT, 2601, Australia
| | - Hark Hoe Tan
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Chennupati Jagadish
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Antonio Tricoli
- Nanotechnology Research Laboratory, Research School of Chemistry, College of Science, The Australian National University, Canberra, ACT, 2601, Australia
- Nanotechnology Research Laboratory, School of Biomedical Engineering, Faculty of Engineering, The University of Sydney, NSW, 2006, Australia
| | - Lan Fu
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
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Yi R, Zhang X, Zhang F, Gu L, Zhang Q, Fang L, Zhao J, Fu L, Tan HH, Jagadish C, Gan X. Integrating a Nanowire Laser in an on-Chip Photonic Waveguide. NANO LETTERS 2022; 22:9920-9927. [PMID: 36516353 DOI: 10.1021/acs.nanolett.2c03364] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
We report a simple and facile integration strategy of a laser source in passive photonic integrated circuits (PICs) by deterministically embedding semiconductor nanowires (NWs) in waveguides. InP NWs laid on a SiN slab are buried by a polymer layer which also acts as an electron-beam resist. With electron-beam lithography, hybrid polymer-SiN waveguides are formed with precisely embedded NWs. The lasing behavior of the waveguide-embedded NWs is confirmed, and more importantly, the NW lasing mode couples into the hybrid waveguide and forms an in-plane guiding mode. Multiple waveguide-embedded NW lasers are further integrated in complex photonic structures to illustrate that the waveguiding mode supplied by the NW lasers could be manipulated for on-chip signal processing, including power splitting and wavelength-division multiplexing. This integration strategy of an on-chip laser is applicable to other PIC platforms, such as silicon and lithium niobate, and the top cladding layer could be changed by depositing SiN or SiO2, promising its CMOS compatibility.
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Affiliation(s)
- Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Xutao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, People's Republic of China
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Linpeng Gu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Qiao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Liang Fang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
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10
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Gagrani N, Vora K, Jagadish C, Tan HH. Thin Sn xNi yO z Films as p-Type Transparent Conducting Oxide and Their Application in Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2022; 14:37101-37109. [PMID: 35917233 DOI: 10.1021/acsami.2c04890] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The development of good-quality p-type transparent conducting oxides (TCOs) is essential to realize the full potential of TCOs for transparent electronics. This study investigates various optical and electrical properties of SnxNiyOz under different deposition conditions to achieve high-performance p-type TCOs. We found that a film with 20% O2/Ar deposited at room temperature exhibits the highest p-type conductivity with a carrier concentration of 2.04 × 1017 cm-3, a resistivity of 14.01 Ωcm, and a Hall mobility of 7.7 cm2 V-1 S-1. We also studied the elemental properties of a SnxNiyOz film and the band alignment at the SnxNiyOz/InP interface and found reasonably large values of the conduction band offset (CBO) and valence band offset (VBO). Finally, we demonstrate stable light-emitting diodes (LEDs) with n-InP nanowires (NWs) conformably coated with a p-SnxNiyOz structure. Several films and devices were fabricated and tested over a span of 6 months, and we observed similar characteristics. This confirms the stability and reliability of the films as well as the reproducibility of the LEDs. We also investigated the temperature-dependent behavior of these LEDs and observed an additional peak due to a zinc blende/wurtzite (ZB/WZ) transition at the InP substrate and NW interface at ∼98 K and below. This study provides promising results of SnxNiyOz as a potential p-type TCO candidate for applications in electronics and optoelectronics.
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11
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König D, Smith SC. Analytical description of nanowires III: regular cross sections for wurtzite structures. ACTA CRYSTALLOGRAPHICA SECTION B, STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS 2022; 78:665-677. [PMID: 35975832 PMCID: PMC9370209 DOI: 10.1107/s2052520622004954] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Accepted: 05/09/2022] [Indexed: 06/15/2023]
Abstract
Setting out from König & Smith [Acta Cryst. (2019), B75, 788-802; Acta Cryst. (2021), B77, 861], we present an analytic description of nominal wurtzite-structure nanowire (NWire) cross sections, focusing on the underlying geometric-crystallographic description and on the associated number theory. For NWires with diameter dWire[i], we predict the number of NWire atoms NWire[i], the bonds between these Nbnd[i] and NWire interface bonds NIF[i] for a slab of unit-cell length, along with basic geometric variables, such as the specific length of interface facets, as well as widths, heights and total area of the cross section. These areas, the ratios of internal bonds per NWire atom, of internal-to-interface bonds and of interface bonds per NWire atom present fundamental tools to interpret any spectroscopic data which depend on the diameter and cross section shape of NWires. Our work paves the way for a fourth publication which - in analogy to König & Smith [Acta Cryst. (2022). B78, 643-664] - will provide adaptive number series to allow for arbitrary morphing of nominal w-structure NWire cross sections treated herein.
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Affiliation(s)
- Dirk König
- Integrated Materials Design Lab (IMDL), Research School of Physics and Engineering, The Australian National University, ACT 2601, Australia
- Institute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074 Aachen, Germany
- Integrated Materials Design Centre (IMDC), University of New South Wales, NSW 2052, Australia
| | - Sean C. Smith
- Integrated Materials Design Lab (IMDL), Research School of Physics and Engineering, The Australian National University, ACT 2601, Australia
- Department of Applied Mathematics, Research School of Physics and Engineering, The Australian National University, ACT 2601, Australia
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12
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Shen X, Li P, Guo P, Yu KM. On-wire bandgap engineering via a magnetic-pulled CVD approach and optoelectronic applications of one-dimensional nanostructures. NANOTECHNOLOGY 2022; 33:432002. [PMID: 35816940 DOI: 10.1088/1361-6528/ac800b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Accepted: 07/11/2022] [Indexed: 06/15/2023]
Abstract
Since the emergence of one-dimensional nanostructures, in particular the bandgap-graded semiconductor nanowires/ribbons or heterostructures, lots of attentions have been devoted to unraveling their intriguing properties and finding applications for future developments in optical communications and integrated optoelectronic devices. In particular, the ability to modulate the bandgap along a single nanostructure greatly enhances their functionalities in optoelectronics, and hence these studies are essential to pave the way for future high-integrated devices and circuits. Herein, we focus on a brief review on recent advances about the synthesis through a magnetic-pulled chemical vapor deposition approach, crystal structure and the unique optical and electronic properties of on-nanostructures semiconductors, including axial nanowire heterostructures, asymmetrical/symmetric bandgap gradient nanowires, lateral heterostructure nanoribbons, lateral bandgap graded ribbons. Moreover, recent developments in applications using low-dimensional bandgap modulated structures, especially in bandgap-graded nanowires and heterostructures, are summarized, including multicolor lasers, waveguides, white-light sources, photodetectors, and spectrometers, where the main strategies and unique features are addressed. Finally, future outlook and perspectives for the current challenges and the future opportunities of one-dimensional nanostructures with bandgap engineering are discussed to provide a roadmap future development in the field.
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Affiliation(s)
- Xia Shen
- College of Physics and Optoelectronics, Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
| | - Pu Li
- College of Physics and Optoelectronics, Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
| | - Pengfei Guo
- College of Physics and Optoelectronics, Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
| | - Kin Man Yu
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong 999077, People's Republic of China
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13
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Kimura S, Gamo H, Katsumi Y, Motohisa J, Tomioka K. InP nanowire light-emitting diodes with different pn-junction structures. NANOTECHNOLOGY 2022; 33:305204. [PMID: 35395650 DOI: 10.1088/1361-6528/ac659a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2022] [Accepted: 04/08/2022] [Indexed: 06/14/2023]
Abstract
We report on the characterization of wurtzite (WZ) InP nanowire (NW) light-emitting diodes (LEDs) with different pn junctions (axial and radial). The series resistance tended to be smaller in the NW-LED using core-shell InP NWs with a radial pn junction than in the NW-LED using InP NWs with an axial pn junction, indicating that radial pn junctions are more suitable for current injection. The electroluminescence (EL) properties of both NW LEDs revealed that the EL had three peaks originating from the zinc-blende (ZB) phase, WZ phase, and ZB/WZ heterojunction. Transmission electron microscopy showed that the dominant EL in the radial pn junction originated from the ZB/WZ interface across the stacking faults.
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Affiliation(s)
- S Kimura
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Japan
| | - H Gamo
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Japan
| | - Y Katsumi
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Japan
| | - J Motohisa
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Japan
| | - K Tomioka
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Japan
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14
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Gagrani N, Vora K, Fu L, Jagadish C, Tan HH. Flexible InP-ZnO nanowire heterojunction light emitting diodes. NANOSCALE HORIZONS 2022; 7:446-454. [PMID: 35266461 DOI: 10.1039/d1nh00535a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Flexible, substrate-free nanowire (NW) devices are desirable to overcome the extremely challenging task of integrating III-V or III-N semiconductor devices such as LEDs and lasers on a range of optoelectronic circuits or biochips. In this work, we report the demonstration of core-shell p-InP/n-ZnO heterojunction NW array LEDs. The emission from the devices consists of three peaks at room temperature due to conduction band-to-heavy hole band transition, conduction band-to-light hole band transition and recombination at the substrate. At 78 K, an additional peak due to Zn acceptor levels is observed, whereas the peak due to the conduction band-to-light hole band transition quenches. Flexible LEDs are then fabricated by embedding the NW arrays in SU-8 to enable subsequent lift-off from the substrate. Compared with the original on-substrate LED device, broader, red-shifted and multiple peaks are observed from the flexible devices, which may be due to non-uniform strain related effects in the NWs caused by the SU-8 film. A slightly higher series resistance as compared to the on-substrate device and significant Joule heating suggest that good heatsinking is required for these flexible devices. Nevertheless, our study paves a promising way towards flexible and low power LEDs.
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Affiliation(s)
- Nikita Gagrani
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
| | - Kaushal Vora
- Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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15
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Li Z, Li L, Wang F, Xu L, Gao Q, Alabadla A, Peng K, Vora K, Hattori HT, Tan HH, Jagadish C, Fu L. Investigation of light-matter interaction in single vertical nanowires in ordered nanowire arrays. NANOSCALE 2022; 14:3527-3536. [PMID: 35171176 DOI: 10.1039/d1nr08088a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quasi one-dimensional semiconductor nanowires (NWs) in either arrays or single free-standing forms have shown unique optical properties (i.e., light absorption and emission) differently from their thin film or bulk counterparts, presenting new opportunities for achieving enhanced performance and/or functionalities for optoelectronic device applications. However, there is still a lack of understanding of the absorption properties of vertically standing single NWs within an array environment with light coupling from neighboring NWs within certain distances, due to the challenges in fabrication of such devices. In this article, we present a new approach to fabricate single vertically standing NW photodetectors from ordered InP NW arrays using the focused ion beam technique, to allow direct measurements of optical and electrical properties of single NWs standing in an array. The light-matter interaction and photodetector performance are investigated using both experimental and theoretical methods. The consistent photocurrent and simulated absorption mapping results reveal that the light absorption and thus photoresponse of single NWs are strongly affected by the NW array geometry and related light coupling from their surrounding dielectric environment, due to the large absorption cross section and/or strong light interaction. While the highest light concentration factor (∼19.64) was obtained from the NW in an array with a pitch of 1.5 μm, the higher responsivity per unit cell (equivalent to NW array responsivity) of a single vertical NW photodetector was achieved in an array with a pitch of 0.8 μm, highlighting the importance of array design for practical applications. The insight from our study can provide important guidance to evaluate and optimize the device design of NW arrays for a wide range of optoelectronic device applications.
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Affiliation(s)
- Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
| | - Li Li
- Australian National Fabrication Facility, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Fan Wang
- School of Electrical and Data Engineering, Faculty of Engineering and Information Technology, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Lei Xu
- Advanced Optics and Photonics Laboratory, Department of Engineering, School of Science & Technology, Nottingham Trent University, Nottingham, NG1 4FQ, United Kingdom
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
| | - Ahmed Alabadla
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
| | - Kun Peng
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
| | - Kaushal Vora
- Australian National Fabrication Facility, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Haroldo T Hattori
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT 2610, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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16
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Tu CW, Kaveh M, Fränzl M, Gao Q, Tan HH, Jagadish C, Schmitzer H, Wagner HP. Unique reflection from birefringent uncoated and gold-coated InP nanowire crystal arrays. OPTICS EXPRESS 2022; 30:3172-3182. [PMID: 35209584 DOI: 10.1364/oe.440891] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Accepted: 12/29/2021] [Indexed: 06/14/2023]
Abstract
We demonstrate unique reflective properties of light from bare and gold-coated InP nanowire (NW) photonic crystal arrays. The undoped wurtzite InP nanowire arrays are grown by selective area epitaxy and coated with a 12-nm thick Al2O3 film to suppress atmospheric oxidation. A nominally 10-nm thick gold film is deposited around the NWs to investigate plasmonic effects. The reflectance spectra show pronounced Fabry-Perot oscillations, which are shifted for p- and s-polarized light due to a strong intrinsic birefringence in the NW arrays. Gold-coating of the NW array leads to a significant increase of the reflectance by a factor of two to three compared to the uncoated array, which is partially attributed to a plasmon resonance of the gold caps on top of the NWs and to a plasmonic antenna effect for p-polarized light. These interpretations are supported by finite-difference-time-domain simulations. Our experiments and simulations indicate that NW arrays can be used to design micrometer-sized polarizers, analyzers, and mirrors which are important optical elements in optoelectronic integrated circuits.
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17
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Aman G, Mohammadi F, Fränzl M, Lysevych M, Tan HH, Jagadish C, Schmitzer H, Cahay M, Wagner HP. Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires. Sci Rep 2021; 11:21378. [PMID: 34725406 PMCID: PMC8560920 DOI: 10.1038/s41598-021-00855-w] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2021] [Accepted: 10/18/2021] [Indexed: 11/09/2022] Open
Abstract
Optically pumped lasing from highly Zn-doped GaAs nanowires lying on an Au film substrate and from Au-coated nanowires has been demonstrated up to room temperature. The conically shaped GaAs nanowires were first coated with a 5 nm thick Al2O3 shell to suppress atmospheric oxidation and band-bending effects. Doping with a high Zn concentration increases both the radiative efficiency and the material gain and leads to lasing up to room temperature. A detailed analysis of the observed lasing behavior, using finite-difference time domain simulations, reveals that the lasing occurs from low loss hybrid modes with predominately photonic character combined with electric field enhancement effects. Achieving low loss lasing from NWs on an Au film and from Au coated nanowires opens new prospects for on-chip integration of nanolasers with new functionalities including electro-optical modulation, conductive shielding, and polarization control.
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Affiliation(s)
- Gyanan Aman
- grid.24827.3b0000 0001 2179 9593Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45221 USA
| | - Fatemesadat Mohammadi
- grid.24827.3b0000 0001 2179 9593Department of Physics, University of Cincinnati, Cincinnati, OH 45221 USA
| | - Martin Fränzl
- grid.9647.c0000 0004 7669 9786Department of Physics, University of Leipzig, 04109 Leipzig, Germany
| | - Mykhaylo Lysevych
- grid.1001.00000 0001 2180 7477Department of Electronic Materials Engineering, ARC Center of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601 Australia
| | - Hark Hoe Tan
- grid.1001.00000 0001 2180 7477Department of Electronic Materials Engineering, ARC Center of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601 Australia
| | - Chennupati Jagadish
- grid.1001.00000 0001 2180 7477Department of Electronic Materials Engineering, ARC Center of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601 Australia
| | - Heidrun Schmitzer
- grid.268352.80000 0004 1936 7849Department of Physics, Xavier University, Cincinnati, OH 45207 USA
| | - Marc Cahay
- grid.24827.3b0000 0001 2179 9593Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45221 USA
| | - Hans Peter Wagner
- grid.24827.3b0000 0001 2179 9593Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45221 USA ,grid.24827.3b0000 0001 2179 9593Department of Physics, University of Cincinnati, Cincinnati, OH 45221 USA
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18
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Al-Humaidi M, Feigl L, Jakob J, Schroth P, AlHassan A, Davtyan A, Herranz J, Anjum T, Novikov D, Francoual S, Geelhaar L, Baumbach T, Pietsch U. In situx-ray analysis of misfit strain and curvature of bent polytypic GaAs-In xGa 1-xAs core-shell nanowires. NANOTECHNOLOGY 2021; 33:015601. [PMID: 34560680 DOI: 10.1088/1361-6528/ac29d8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2021] [Accepted: 09/24/2021] [Indexed: 06/13/2023]
Abstract
Misfit strain in core-shell nanowires can be elastically released by nanowire bending in case of asymmetric shell growth around the nanowire core. In this work, we investigate the bending of GaAs nanowires during the asymmetric overgrowth by an InxGa1-xAs shell caused by avoiding substrate rotation. We observe that the nanowire bending direction depends on the nature of the substrate's oxide layer, demonstrated by Si substrates covered by native and thermal oxide layers. Further, we follow the bending evolution by time-resolvedin situx-ray diffraction measurements during the deposition of the asymmetric shell. The XRD measurements give insight into the temporal development of the strain as well as the bending evolution in the core-shell nanowire.
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Affiliation(s)
- Mahmoud Al-Humaidi
- Solid State Physics, University of Siegen, Walter-Flex Straße 3, D-57068, Siegen, Germany
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
| | - Ludwig Feigl
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
| | - Julian Jakob
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
- Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße 12, D-76131 Karlsruhe, Germany
| | - Philipp Schroth
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
- Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße 12, D-76131 Karlsruhe, Germany
| | - Ali AlHassan
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
| | - Arman Davtyan
- Solid State Physics, University of Siegen, Walter-Flex Straße 3, D-57068, Siegen, Germany
| | - Jesús Herranz
- Paul-Drude-Institut für Festkörperelektronik, Leibniz Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Tasser Anjum
- Solid State Physics, University of Siegen, Walter-Flex Straße 3, D-57068, Siegen, Germany
| | - Dmitri Novikov
- Deutsches Elektronen-Synchrotron, PETRA III, D-22607 Hamburg, Germany
| | - Sonia Francoual
- Deutsches Elektronen-Synchrotron, PETRA III, D-22607 Hamburg, Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik, Leibniz Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Tilo Baumbach
- Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
- Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße 12, D-76131 Karlsruhe, Germany
| | - Ullrich Pietsch
- Solid State Physics, University of Siegen, Walter-Flex Straße 3, D-57068, Siegen, Germany
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19
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Manipulating Intermediates at the Au–TiO 2 Interface over InP Nanopillar Array for Photoelectrochemical CO 2 Reduction. ACS Catal 2021. [DOI: 10.1021/acscatal.1c02043] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
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20
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Wong WW, Su Z, Wang N, Jagadish C, Tan HH. Epitaxially Grown InP Micro-Ring Lasers. NANO LETTERS 2021; 21:5681-5688. [PMID: 34143635 DOI: 10.1021/acs.nanolett.1c01411] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In the near future, technological advances driven by the Fourth Industrial Revolution will boost the demand for integrated, power-efficient miniature lasers, which are important for optical data communications and advanced sensing applications. Although top-down fabricated III-V semiconductor micro-disk and micro-ring lasers have been shown to be efficient light sources, challenges such as etching-induced sidewall roughness and poor fabrication scalability have been limiting the potential for high-density on-chip integration. Here, we demonstrate InP micro-ring lasers fabricated with a highly scalable epitaxial growth technique. With an optimized cavity design, the optically pumped micro-ring lasers show efficient room-temperature lasing with a lasing threshold of around 50 μJ cm-2 per pulse. Remarkably, through comprehensive modeling of the micro-ring laser, we demonstrate lasing mode engineering experimentally by tuning the vertical ring height. Our work is a major step toward realizing the high-density monolithic integration of III-V miniature lasers on submicrometer-scale optoelectronic devices.
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Affiliation(s)
- Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Zhicheng Su
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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21
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Azimi Z, Gagrani N, Qu J, Lem OLC, Mokkapati S, Cairney JM, Zheng R, Tan HH, Jagadish C, Wong-Leung J. Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications. NANOSCALE HORIZONS 2021; 6:559-567. [PMID: 33999985 DOI: 10.1039/d1nh00079a] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
GaAs nanowires are regarded as promising building blocks of future optoelectronic devices. Despite progress, the growth of high optical quality GaAs nanowires is a standing challenge. Understanding the role of twin defects and nanowire facets on the optical emission and minority carrier lifetime of GaAs nanowires is key for the engineering of their optoelectronic properties. Here, we present new insights into the microstructural parameters controlling the optical properties of GaAs nanowires, grown via selective-area metal-organic vapor-phase epitaxy. We observe that these GaAs nanowires have a twinned zinc blende crystal structure with taper-free {110} side facets that result in an ultra-low surface recombination velocity of 3.5 × 104 cm s-1. This is an order of magnitude lower than that reported for defect-free GaAs nanowires grown by the vapor-liquid-solid technique. Using time-resolved photoluminescence and cathodoluminescence measurements, we untangle the local correlation between structural and optical properties demonstrating the superior role of the side facets in determining recombination rates over that played by twin defects. The low surface recombination velocity of these taper-free {110} side facets enable us to demonstrate, for the first time, low-temperature lasing from bare (unpassivated) GaAs nanowires, and also efficient room-temperature lasing after passivation with an AlGaAs shell.
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Affiliation(s)
- Zahra Azimi
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australia.
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22
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Wang N, Wong WW, Yuan X, Li L, Jagadish C, Tan HH. Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100263. [PMID: 33856732 DOI: 10.1002/smll.202100263] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2021] [Revised: 03/08/2021] [Indexed: 06/12/2023]
Abstract
There is a strong demand for III-V nanostructures of different geometries and in the form of interconnected networks for quantum science applications. This can be achieved by selective area epitaxy (SAE) but the understanding of crystal growth in these complicated geometries is still insufficient to engineer the desired shape. Here, the shape evolution and crystal structure of InP nanostructures grown by SAE on InP substrates of different orientations are investigated and a unified understanding to explain these observations is established. A strong correlation between growth direction and crystal phase is revealed. Wurtzite (WZ) and zinc-blende (ZB) phases form along <111>A and <111>B directions, respectively, while crystal phase remains the same along other low-index directions. The polarity induced crystal structure difference is explained by thermodynamic difference between the WZ and ZB phase nuclei on different planes. Growth from the openings is essentially determined by pattern confinement and minimization of the total surface energy, regardless of substrate orientations. A novel type-II WZ/ZB nanomembrane homojunction array is obtained by tailoring growth directions through alignment of the openings along certain crystallographic orientations. The understanding in this work lays the foundation for the design and fabrication of advanced III-V semiconductor devices based on complex geometrical nanostructures.
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Affiliation(s)
- Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xiaoming Yuan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Li Li
- Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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23
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Tian Z, Yuan X, Zhang Z, Jia W, Zhou J, Huang H, Meng J, He J, Du Y. Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium. NANOSCALE RESEARCH LETTERS 2021; 16:49. [PMID: 33743092 PMCID: PMC7981363 DOI: 10.1186/s11671-021-03505-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2021] [Accepted: 03/05/2021] [Indexed: 06/12/2023]
Abstract
Growth of high-quality III-V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III-V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III-V nanowire growth studies provide an excellent example to guide the nanowire growth.
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Affiliation(s)
- Zhenzhen Tian
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Xiaoming Yuan
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China.
| | - Ziran Zhang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Wuao Jia
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Jian Zhou
- College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, China
| | - Han Huang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Jianqiao Meng
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Jun He
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China.
| | - Yong Du
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
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24
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Staudinger P, Mauthe S, Triviño NV, Reidt S, Moselund KE, Schmid H. Wurtzite InP microdisks: from epitaxy to room-temperature lasing. NANOTECHNOLOGY 2021; 32:075605. [PMID: 33252055 DOI: 10.1088/1361-6528/abbb4e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metastable wurtzite crystal phases of conventional semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and beyond nanowire size constraints has remained elusive. In this work, the epitaxy of wurtzite InP microdisks and related geometries on insulator for advanced optical applications is explored. This is achieved by an elaborate combination of selective area growth of fins and a zipper-induced epitaxial lateral overgrowth, which enables co-integration of diversely shaped crystals at precise position. The grown material possesses high phase purity and excellent optical quality characterized by STEM and µ-PL. Optically pumped lasing at room temperature is achieved in microdisks with a lasing threshold of 365 µJ cm-2. Our platform could provide novel geometries for photonic applications.
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Affiliation(s)
| | - Svenja Mauthe
- IBM Research Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | | | - Steffen Reidt
- IBM Research Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | | | - Heinz Schmid
- IBM Research Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
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25
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Yuan X, Wang N, Tian Z, Zhang F, Li L, Lockrey M, He J, Jagadish C, Tan HH. Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays. NANOSCALE HORIZONS 2020; 5:1530-1537. [PMID: 32955074 DOI: 10.1039/d0nh00410c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Selective area epitaxy is a powerful growth technique that has been used to produce III-V semiconductor nanowire and nanomembrane arrays for photonic and electronic applications. The incorporation of a heterostructure such as quantum wells (QWs) brings new functionality and further broadens their applications. Using InP nanowires and nanomembranes as templates, we investigate the growth of InAsP QWs on these pure wurtzite nanostructures. InAsP QWs grow both axially and laterally on the nanowires and nanomembranes, forming a zinc blende phase axially and wurtzite phase on the sidewalls. On the non-polar {11[combining macron]00} sidewalls, the radial QW selectively grows on one sidewall which is located at the semi-polar 〈112[combining macron]〉 A side of the axial QW, causing the shape evolution of the nanowires from hexagonal to triangular cross section. For nanomembranes with {11[combining macron]00} sidewalls, the radial QW grows asymmetrically on the {11[combining macron]00} facet, destroying their symmetry. In comparison, nanomembranes with {112[combining macron]0} sidewalls are shown to be an ideal template for the growth of InAsP QWs, thanks to the uniform QW formation. These QWs emit strongly in the near IR region at room temperature and their emission can be tuned by changing their thickness or composition. These findings enrich our understanding of the QW growth, which provides new insights for heterostructure design in other III-V nanostructures.
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Affiliation(s)
- Xiaoming Yuan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China.
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26
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McPhillimy J, Jevtics D, Guilhabert BJE, Klitis C, Hurtado A, Sorel M, Dawson MD, Strain MJ. Automated Nanoscale Absolute Accuracy Alignment System for Transfer Printing. ACS APPLIED NANO MATERIALS 2020; 3:10326-10332. [PMID: 33134883 PMCID: PMC7590505 DOI: 10.1021/acsanm.0c02224] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2020] [Accepted: 09/23/2020] [Indexed: 05/17/2023]
Abstract
The heterogeneous integration of micro- and nanoscale devices with on-chip circuits and waveguide platforms is a key enabling technology, with wide-ranging applications in areas including telecommunications, quantum information processing, and sensing. Pick and place integration with absolute positional accuracy at the nanoscale has been previously demonstrated for single proof-of-principle devices. However, to enable scaling of this technology for realization of multielement systems or high throughput manufacturing, the integration process must be compatible with automation while retaining nanoscale accuracy. In this work, an automated transfer printing process is realized by using a simple optical microscope, computer vision, and high accuracy translational stage system. Automatic alignment using a cross-correlation image processing method demonstrates absolute positional accuracy of transfer with an average offset of <40 nm (3σ < 390 nm) for serial device integration of both thin film silicon membranes and single nanowire devices. Parallel transfer of devices across a 2 × 2 mm2 area is demonstrated with an average offset of <30 nm (3σ < 705 nm). Rotational accuracy better than 45 mrad is achieved for all device variants. Devices can be selected and placed with high accuracy on a target substrate, both from lithographically defined positions on their native substrate or from a randomly distributed population. These demonstrations pave the way for future scalable manufacturing of heterogeneously integrated chip systems.
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Affiliation(s)
- John McPhillimy
- Institute
of Photonics, SUPA Department of Physics, University of Strathclyde, Glasgow, United Kingdom
- School
of Engineering, University of Glasgow, Glasgow, United Kingdom
| | - Dimitars Jevtics
- Institute
of Photonics, SUPA Department of Physics, University of Strathclyde, Glasgow, United Kingdom
| | - Benoit J. E. Guilhabert
- Institute
of Photonics, SUPA Department of Physics, University of Strathclyde, Glasgow, United Kingdom
| | | | - Antonio Hurtado
- Institute
of Photonics, SUPA Department of Physics, University of Strathclyde, Glasgow, United Kingdom
| | - Marc Sorel
- School
of Engineering, University of Glasgow, Glasgow, United Kingdom
| | - Martin D. Dawson
- Institute
of Photonics, SUPA Department of Physics, University of Strathclyde, Glasgow, United Kingdom
| | - Michael J. Strain
- Institute
of Photonics, SUPA Department of Physics, University of Strathclyde, Glasgow, United Kingdom
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27
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Braun MR, Güniat L, Fontcuberta I Morral A, McIntyre PC. In-situ reflectometry to monitor locally-catalyzed initiation and growth of nanowire assemblies. NANOTECHNOLOGY 2020; 31:335703. [PMID: 32344388 DOI: 10.1088/1361-6528/ab8def] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We investigate in-situ laser reflectometry for measuring the axial growth rate in chemical vapor deposition of assemblies of well-aligned vertical germanium nanowires grown epitaxially on single crystal substrates. Finite difference frequency domain optical simulations were performed in order to facilitate quantitative analysis and interpretation of the measured reflectivity data. The results show an insensitivity of the reflected intensity oscillation period to nanowire diameter and density within the range of experimental conditions investigated. Compared to previous quantitative in-situ measurements performed on III-V nanowire arrays, which showed two distinct rate regimes, we observe a constant, steady-state nanowire growth rate. Furthermore, we show that the measured reflectivity decay can be used to determine the germanium nanowire nucleation time with good precision. This technique provides an avenue to monitor growth of nanowires in a variety of materials systems and growth conditions.
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Affiliation(s)
- Michael R Braun
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
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28
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Yuan X, Liu K, Skalsky S, Parkinson P, Fang L, He J, Tan HH, Jagadish C. Carrier dynamics and recombination mechanisms in InP twinning superlattice nanowires. OPTICS EXPRESS 2020; 28:16795-16804. [PMID: 32549494 DOI: 10.1364/oe.388518] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Accepted: 05/13/2020] [Indexed: 06/11/2023]
Abstract
Nominal dopant-free zinc blende twinning superlattice InP nanowires have been grown with high crystal-quality and taper-free morphology. Here, we demonstrate its superior optical performance and clarify the different carrier recombination mechanisms at different temperatures using a time resolved photoluminescence study. The existence of regular twin planes and lateral overgrowth do not significantly increase the defect density. At room temperature, the as-grown InP nanowires have a strong emission at 1.348 eV and long minority carrier lifetime (∼3 ns). The carrier recombination dynamics is mainly dominated by nonradiative recombination due to surface trapping states; a wet chemical etch to reduce the surface trapping density thus boosts the emission intensity and increases the carrier lifetime to 7.1 ns. This nonradiative recombination mechanism dominates for temperatures above 155 K, and the carrier lifetime decreases with increasing temperature. However, radiative recombination dominates the carrier dynamics at temperature below ∼75 K, and a strong donor-bound exciton emission with a narrow emission linewidth of 4.5 meV is observed. Consequently, carrier lifetime increases with temperature. By revealing carrier recombination mechanisms over the temperature range 10-300 K, we demonstrate the attraction of using InP nanostructure for photonics and optoelectronic applications.
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Peng K, Jevtics D, Zhang F, Sterzl S, Damry DA, Rothmann MU, Guilhabert B, Strain MJ, Tan HH, Herz LM, Fu L, Dawson MD, Hurtado A, Jagadish C, Johnston MB. Three-dimensional cross-nanowire networks recover full terahertz state. Science 2020; 368:510-513. [PMID: 32355027 DOI: 10.1126/science.abb0924] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2020] [Accepted: 04/01/2020] [Indexed: 12/17/2022]
Abstract
Terahertz radiation encompasses a wide band of the electromagnetic spectrum, spanning from microwaves to infrared light, and is a particularly powerful tool for both fundamental scientific research and applications such as security screening, communications, quality control, and medical imaging. Considerable information can be conveyed by the full polarization state of terahertz light, yet to date, most time-domain terahertz detectors are sensitive to just one polarization component. Here we demonstrate a nanotechnology-based semiconductor detector using cross-nanowire networks that records the full polarization state of terahertz pulses. The monolithic device allows simultaneous measurements of the orthogonal components of the terahertz electric field vector without cross-talk. Furthermore, we demonstrate the capabilities of the detector for the study of metamaterials.
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Affiliation(s)
- Kun Peng
- Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, UK
| | - Dimitars Jevtics
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, Glasgow G1 1RD, UK
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Sabrina Sterzl
- Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, UK
| | - Djamshid A Damry
- Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, UK
| | - Mathias U Rothmann
- Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, UK
| | - Benoit Guilhabert
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, Glasgow G1 1RD, UK
| | - Michael J Strain
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, Glasgow G1 1RD, UK
| | - Hark H Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Laura M Herz
- Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, UK
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Martin D Dawson
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, Glasgow G1 1RD, UK
| | - Antonio Hurtado
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, Glasgow G1 1RD, UK
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Michael B Johnston
- Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, UK.
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30
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Wong-Leung J, Yang I, Li Z, Karuturi SK, Fu L, Tan HH, Jagadish C. Engineering III-V Semiconductor Nanowires for Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1904359. [PMID: 31621966 DOI: 10.1002/adma.201904359] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2019] [Revised: 08/19/2019] [Indexed: 05/26/2023]
Abstract
III-V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.
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Affiliation(s)
- Jennifer Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Inseok Yang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Siva Krishna Karuturi
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
- Research School of Electrical, Energy and Materials Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
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31
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Staudinger P, Moselund KE, Schmid H. Exploring the Size Limitations of Wurtzite III-V Film Growth. NANO LETTERS 2020; 20:686-693. [PMID: 31834808 DOI: 10.1021/acs.nanolett.9b04507] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Metastable crystal phases of abundant semiconductors such as III-Vs, Si, or Ge comprise enormous potential to address current limitations in green light-emitting electrical diodes (LEDs) and group IV photonics. At the same time, these nonconventional polytypes benefit from the chemical similarity to their stable counterparts, which enables the reuse of established processing technology. One of the main challenges is the very limited availability and the small crystal sizes that have been obtained so far. In this work, we explore the limitations of wurtzite (WZ) film epitaxy on the example of InP. We develop a novel method to switch and maintain a metastable phase during a metal-organic vapor phase epitaxy process based on epitaxial lateral overgrowth and compare it with standard selective area epitaxy techniques. We achieve unprecedented large WZ layer dimensions exceeding 100 μm2 and prove their phase purity both by optical as well as structural characterization. On the basis of our observations, we further develop a nucleation-based model and argue on a fundamental size limitation of WZ film growth. Our findings may pave the way toward crystal phase engineered LEDs for highly efficient lighting and display applications.
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Affiliation(s)
| | | | - Heinz Schmid
- IBM Research - Zürich , Säumerstrasse 4 , 8803 Rüschlikon , Switzerland
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32
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 75] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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33
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Affiliation(s)
- Li Na Quan
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Joohoon Kang
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute, Berkeley, California 94720, United States
- Center for NanoMedicine, Institute for Basic Science (IBS), Seoul 03772, Korea
- Y-IBS Institute, Yonsei University, Seoul 03772, Korea
| | - Cun-Zheng Ning
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, United States
| | - Peidong Yang
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute, Berkeley, California 94720, United States
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
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34
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Wang N, Yuan X, Zhang X, Gao Q, Zhao B, Li L, Lockrey M, Tan HH, Jagadish C, Caroff P. Shape Engineering of InP Nanostructures by Selective Area Epitaxy. ACS NANO 2019; 13:7261-7269. [PMID: 31180645 DOI: 10.1021/acsnano.9b02985] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Greater demand for III-V nanostructures with more sophisticated geometries other than nanowires is expected because of the recent intensive investigation of nanowire networks that show great potential in all-optical logic gates, nanoelectronics, and quantum computing. Here, we demonstrate highly uniform arrays of InP nanostructures with tunable shapes, such as membrane-, prism-, and ring-like shapes, which can be simultaneously grown by selective area epitaxy. Our in-depth investigation of shape evolution confirms that the shape is essentially determined by pattern confinement and the minimization of total surface energy. After growth optimization, all of the different InP nanostructures grown under the same growth conditions show perfect wurtzite structure regardless of the geometry and strong and homogeneous photon emission. This work expands the research field in terms of producing nanostructures with the desired shapes beyond the limits of nanowires to satisfy various requirements for nanoelectronics, optoelectronics, and quantum device applications.
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Affiliation(s)
- Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Xiaoming Yuan
- Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, School of Physics and Electronics , Central South University , 932 South Lushan Road , Changsha , Hunan 410083 , P. R. China
| | - Xu Zhang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
- National Center for International Joint Research of Electronic Materials and Systems, Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering , Zhengzhou University , Zhengzhou , Henan 450052 , P. R. China
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Bijun Zhao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Li Li
- Australian National Fabrication Facility ACT Node, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Mark Lockrey
- Australian National Fabrication Facility ACT Node, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Philippe Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
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35
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Yang I, Li Z, Wong-Leung J, Zhu Y, Li Z, Gagrani N, Li L, Lockrey MN, Nguyen H, Lu Y, Tan HH, Jagadish C, Fu L. Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes. NANO LETTERS 2019; 19:3821-3829. [PMID: 31141386 DOI: 10.1021/acs.nanolett.9b00959] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of high-performance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.
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36
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de la Mata M, Zamani RR, Martí-Sánchez S, Eickhoff M, Xiong Q, Fontcuberta I Morral A, Caroff P, Arbiol J. The Role of Polarity in Nonplanar Semiconductor Nanostructures. NANO LETTERS 2019; 19:3396-3408. [PMID: 31039314 DOI: 10.1021/acs.nanolett.9b00459] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e.g., electronic or photonic) and morphological features (e.g., shape, growth direction, and so forth) also strongly depend on the polarity. It has been observed that nanoscale materials tend to grow with a specific polarity, which can eventually be reversed for very specific growth conditions. In addition, polar-directed growth affects the defect density and topology and might induce eventually the formation of undesirable polarity inversion domains in the nanostructure, which in turn will affect the photonic and electronic final device performance. Here, we present a review on the polarity-driven growth mechanism at the nanoscale, combining our latest investigation with an overview of the available literature highlighting suitable future possibilities of polarity engineering of semiconductor nanostructures. The present study has been extended over a wide range of semiconductor compounds, covering the most commonly synthesized III-V (GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb) and II-VI (ZnO, ZnTe, CdS, CdSe, CdTe) nanowires and other free-standing nanostructures (tripods, tetrapods, belts, and membranes). This systematic study allowed us to explore the parameters that may induce polarity-dependent and polarity-driven growth mechanisms, as well as the polarity-related consequences on the physical properties of the nanostructures.
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Affiliation(s)
- María de la Mata
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona, Catalonia , Spain
| | - Reza R Zamani
- Interdisciplinary Center for Electron Microscopy, CIME , École Polytechnique Fédérale de Lausanne (EPFL) , 1015 Lausanne , Switzerland
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona, Catalonia , Spain
| | - Martin Eickhoff
- Institute of Solid State Physics , University of Bremen , 28359 Bremen , Germany
| | - Qihua Xiong
- School of Physical and Mathematical Sciences , Nanyang Technological University , 637371 Singapore
| | | | - Philippe Caroff
- Microsoft Quantum Lab Delft, Delft University of Technology , 2600 GA Delft , The Netherlands
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona, Catalonia , Spain
- ICREA , Pg. Lluís Companys 23 , 08010 Barcelona, Catalonia , Spain
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37
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Akiyama T, Nakamura K, Ito T. Effects of surface and twinning energies on twining-superlattice formation in group III-V semiconductor nanowires: a first-principles study. NANOTECHNOLOGY 2019; 30:234002. [PMID: 30759424 DOI: 10.1088/1361-6528/ab06d0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The formation of twin plane superlattices in group III-V semiconductor nanowires (NWs) is analyzed by considering two dimensional nucleation using surface and twinning energies, obtained by performing electronic structure calculations within density functional theory. The calculations for GaP, GaAs, InP, and InAs demonstrate that surface energies strongly depend on the growth conditions such as temperature and pressure during the epitaxial growth. Furthermore, the calculated twinning energies are found to be much smaller than previously estimated values by the dissociation width of edge dislocations, which lead to smaller segment lengths. We also find that the nonlinear relationship between segment length and NW diameter depending on constituent elements is due to the difference in twinning energies. These results imply that twinning formation as well as surface stability are crucial for the formation of twin plane superlattices in group III-V semiconductor NWs.
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Affiliation(s)
- Toru Akiyama
- Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan
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38
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Zhang Y, Saxena D, Aagesen M, Liu H. Toward electrically driven semiconductor nanowire lasers. NANOTECHNOLOGY 2019; 30:192002. [PMID: 30658345 DOI: 10.1088/1361-6528/ab000d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Semiconductor nanowire (NW) lasers are highly promising for making new-generation coherent light sources with the advantages of ultra-small size, high efficiency, easy integration and low cost. Over the past 15 years, this area of research has been developing rapidly, with extensive reports of optically pumped lasing in various inorganic and organic semiconductor NWs. Motivated by these developments, substantial efforts are being made to make NW lasers electrically pumped, which is necessary for their practical implementation. In this review, we first categorize NW lasers according to their lasing wavelength and wavelength tunability. Then, we summarize the methods used for achieving single-mode lasing in NWs. After that, we review reports on lasing threshold reduction and the realization of electrically pumped NW lasers. Finally, we offer our perspective on future improvements and trends.
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Affiliation(s)
- Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
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39
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Chen W, Roca I Cabarrocas P. Rational design of nanowire solar cells: from single nanowire to nanowire arrays. NANOTECHNOLOGY 2019; 30:194002. [PMID: 30654343 DOI: 10.1088/1361-6528/aaff8d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In this review, we report several rational designs of nanowire-based solar cells from single nanowire to nanowire arrays. Two methods of nanowires fabrication: via 'top-down' and 'bottom-up', and two types of configurations including axial and radial junction are presented for nanowire-based solar cells. To enhance absorption, several photon management schemes are shown in detail, including anti-reflection coating, diffractive grating, and plasmonics. Considering the rational design of nanowire arrays, we summarize a total of seven solar cell structures including axial junctions, radial junctions, substrate interfacial junctions, planar junctions, conductors, junctionless and tandem. Each type is supported by examples which are presented and discussed. Finally, a general comparison between bulk and nanowire solar cell efficiencies is given.
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Affiliation(s)
- Wanghua Chen
- Faculty of Science, Ningbo University, 315211 Ningbo, People's Republic of China. LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, F-91128 Palaiseau, France. IPVF, Institut Photovoltaïque d'Île-de-France, F-91120 Palaiseau, France
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40
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Yuan X, Li L, Li Z, Wang F, Wang N, Fu L, He J, Tan HH, Jagadish C. Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires. NANOSCALE 2019; 11:9207-9215. [PMID: 31038526 DOI: 10.1039/c9nr01213c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Wurtzite (WZ) GaAs nanowires (NWs) are of considerable interest for novel optoelectronic applications, yet high quality NWs are still under development. Understanding of their polytypic crystal structure and band structure is the key to improving their emission characteristics. In this work we report that the Ga1-xInxP shell provides ideal passivation on polytypic WZ GaAs NWs, producing high quantum efficiency (up to 80%). From optical measurements, we find that the polytypic nature of the NWs which presents itself as planar defects does not reduce the emission efficiency. A hole transferring approach from the valence band of the zinc blende segments to the light hole (LH) band of the WZ phase is proposed to explain the emission enhancement from the conduction band to LH band. The emission intensity does not correlate to the minority carrier lifetime which is usually used to quantify the optical emission quality. Theoretical calculation predicted type-II band transition in polytypic WZ GaAs NWs is confirmed and presents efficient emission at low temperatures. We further demonstrate the performance of single NW photodetectors with a high photocurrent responsivity up to 65 A W-1 operating over the wavelength range from visible to near infrared.
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Affiliation(s)
- Xiaoming Yuan
- School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
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41
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Güniat L, Caroff P, Fontcuberta I Morral A. Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions. Chem Rev 2019; 119:8958-8971. [PMID: 30998006 DOI: 10.1021/acs.chemrev.8b00649] [Citation(s) in RCA: 123] [Impact Index Per Article: 24.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a plethora of different synthesis techniques. In this review, we focus on the vapor phase, highlighting the most influential achievements along with a historical perspective. Starting with the discovery of VLS, we feature the variety of structures and materials that can be synthesized in the nanowire form. We then move on to establish distinct features such as the three-dimensional heterostructure/doping design and polytypism. We summarize the status quo of the growth mechanisms, recently confirmed by in situ electron microscopy experiments and defining common ground between the different synthesis techniques. We then propose a selection of remaining defects, starting from what we know and going toward what is still to be learned. We believe this review will serve as a reference for neophytes but also as an insight for experts in an effort to bring open questions under a new light.
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Affiliation(s)
- Lucas Güniat
- Laboratory of Semiconductor Materials, Institute of Materials , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Philippe Caroff
- Microsoft Quantum Lab Delft , Delft University of Technology , 2600 GA Delft , The Netherlands
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland.,Institute of Physics , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
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42
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Adams MJ, Jevtics D, Strain MJ, Henning ID, Hurtado A. High-frequency dynamics of evanescently-coupled nanowire lasers. Sci Rep 2019; 9:6126. [PMID: 30992501 PMCID: PMC6467891 DOI: 10.1038/s41598-019-42526-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2018] [Accepted: 04/02/2019] [Indexed: 11/30/2022] Open
Abstract
We analyse the dynamics and conditions for stability in an array of two laterally-coupled nanowire lasers in terms of their separation, difference in resonant frequencies and pumping rate under conditions of weak coupling. We find that the regions of stability are very small and are found close to zero frequency offset between the lasers. Outside these regions various forms of instability including periodic oscillation, chaos and complex dynamics are predicted. Importantly, the analysis of the frequency of periodic oscillations for realistic laser separations and pumping yields values of order 100 GHz thus underlining the significant potential of nanowire laser arrays for ultra-high frequency on-chip systems with very low foot-print and energy requirements.
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Affiliation(s)
- M J Adams
- School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester, CO4 3SQ, UK
| | - D Jevtics
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK
| | - M J Strain
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK
| | - I D Henning
- School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester, CO4 3SQ, UK
| | - A Hurtado
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK.
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Motohisa J, Kameda H, Sasaki M, Tomioka K. Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy. NANOTECHNOLOGY 2019; 30:134002. [PMID: 30625458 DOI: 10.1088/1361-6528/aafce5] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report a systematic study on the current injection and radiative carrier recombination in InP nanowire (NW) light-emitting diodes (LEDs). The InP NWs with axial p-n structures, grown by selective-area metal organic vapor-phase epitaxy, had mixed crystal structures between those of zincblende and wurtzite, mainly in the p-regions. The temperature dependence of the current-voltage (I-V), electroluminescence (EL), and current-light output (I-L) characteristics was investigated. The temperature dependence of the I-V characteristics revealed that tunneling was the main mechanism of carrier transport through the p-n junction in the present NW-LEDs. The temperature and bias voltage dependences of EL showed a complex but systematic behavior, where peaks exhibiting bias-dependent and independent energy positions coexisted and the relative intensity showed a transition with increasing temperature. The external quantum efficiency showed a droop at low temperatures, indicating a reduced injection efficiency at low temperatures. These observations were explained by the radiative and nonradiative tunneling, and suggested a strong effect of the nonradiative tunneling at low temperatures.
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Affiliation(s)
- Junichi Motohisa
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
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44
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Staudinger P, Mauthe S, Moselund KE, Schmid H. Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes. NANO LETTERS 2018; 18:7856-7862. [PMID: 30427685 PMCID: PMC6296706 DOI: 10.1021/acs.nanolett.8b03632] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2018] [Revised: 10/29/2018] [Indexed: 06/01/2023]
Abstract
Recent research on nanowires (NWs) demonstrated the ability of III-V semiconductors to adopt a different crystallographic phase when they are grown as nanostructures, giving rise to a novel class of materials with unique properties. Controlling the crystal structure however remains difficult and the geometrical constraints of NWs cause integration challenges for advanced devices. Here, we report for the first time on the phase-controlled growth of micron-sized planar InP films by selecting confined growth planes during template-assisted selective epitaxy. We demonstrate this by varying the orientation of predefined templates, which results in concurrent formation of zinc-blende (ZB) and wurtzite (WZ) material exhibiting phase purities of 100% and 97%, respectively. Optical characterization revealed a 70 meV higher band gap and a 2.5× lower lifetime for WZ InP in comparison to its natural ZB phase. Further, a model for the transition of the crystal structure is presented based on the observed growth facets and the bonding configuration of InP surfaces.
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45
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Yang I, Zhang X, Zheng C, Gao Q, Li Z, Li L, Lockrey MN, Nguyen H, Caroff P, Etheridge J, Tan HH, Jagadish C, Wong-Leung J, Fu L. Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy. ACS NANO 2018; 12:10374-10382. [PMID: 30281281 DOI: 10.1021/acsnano.8b05771] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
III-V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In particular, the three-dimensional growth mechanism of MQWs embedded in a NW structure by SAE is expected to be different from that of those grown in a planar structure or with a catalyst and has not yet been thoroughly investigated. In this work, we reveal a distinctive radial growth evolution of InGaAs/InP MQW NWs grown by the SAE metal organic vapor-phase epitaxy (MOVPE) technique. We observe the formation of zinc blende (ZB) QW discs induced by the axial InGaAs QW growth on the wurtzite (WZ) base-InP NW and propose it as the key factor driving the overall structure of radial growth. The role of the ZB-to-WZ change in the driving of the overall growth evolution is supported by a growth formalism, taking into account the formation-energy difference between different facets. Despite a polytypic crystal structure with mixed ZB and WZ phases across the MQW region, the NWs exhibit high uniformity and desirable QW spatial layout with bright room-temperature photoluminescence at an optical communication wavelength of ∼1.3 μm, which is promising for the future development of high-efficiency light-emitting devices.
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Affiliation(s)
| | - Xu Zhang
- National Center for International Joint Research of Electronic Materials and Systems, Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering , Zhengzhou University , Zhengzhou 450052 , People's Republic of China
| | - Changlin Zheng
- Monash Centre for Electron Microscopy , Monash University , 10 Innovation Walk , Clayton , Victoria 3800 , Australia
| | | | | | | | | | | | | | - Joanne Etheridge
- Monash Centre for Electron Microscopy , Monash University , 10 Innovation Walk , Clayton , Victoria 3800 , Australia
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46
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Stettner T, Thurn A, Döblinger M, Hill MO, Bissinger J, Schmiedeke P, Matich S, Kostenbader T, Ruhstorfer D, Riedl H, Kaniber M, Lauhon LJ, Finley JJ, Koblmüller G. Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires. NANO LETTERS 2018; 18:6292-6300. [PMID: 30185051 DOI: 10.1021/acs.nanolett.8b02503] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from ∼0.8 to ∼1.1 μm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to ∼25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.
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Affiliation(s)
- T Stettner
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - A Thurn
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - M Döblinger
- Department of Chemistry , Ludwig-Maximilians-Universität München , 81377 München , Germany
| | - M O Hill
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - J Bissinger
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - P Schmiedeke
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - S Matich
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - T Kostenbader
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - D Ruhstorfer
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - H Riedl
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - M Kaniber
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - L J Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - J J Finley
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - G Koblmüller
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
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47
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Cavalli A, Dijkstra A, Haverkort JE, Bakkers EP. Nanowire polymer transfer for enhanced solar cell performance and lower cost. ACTA ACUST UNITED AC 2018. [DOI: 10.1016/j.nanoso.2018.03.014] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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48
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Gagliano L, Albani M, Verheijen MA, Bakkers EPAM, Miglio L. Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case. NANOTECHNOLOGY 2018; 29:315703. [PMID: 29749960 DOI: 10.1088/1361-6528/aac417] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Nanowires have emerged as a promising platform for the development of novel and high-quality heterostructures at large lattice misfit, inaccessible in a thin film configuration. However, despite core-shell nanowires allowing a very efficient elastic release of the misfit strain, the growth of highly uniform arrays of nanowire heterostructures still represents a challenge, for example due to a strain-induced bending morphology. Here we investigate the bending of wurtzite GaP/In x Ga1-x P core-shell nanowires using transmission electron microscopy and energy dispersive x-ray spectroscopy, both in terms of geometric and compositional asymmetry with respect to the longitudinal axis. We compare the experimental data with finite element method simulations in three dimensions, showing that both asymmetries are responsible for the actual bending. Such findings are valid for all lattice-mismatched core-shell nanowire heterostructures based on ternary alloys. Our work provides a quantitative understanding of the bending effect in general while also suggesting a strategy to minimise it.
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Affiliation(s)
- Luca Gagliano
- Dept. of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
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49
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Xu WZ, Ren FF, Jevtics D, Hurtado A, Li L, Gao Q, Ye J, Wang F, Guilhabert B, Fu L, Lu H, Zhang R, Tan HH, Dawson MD, Jagadish C. Vertically Emitting Indium Phosphide Nanowire Lasers. NANO LETTERS 2018; 18:3414-3420. [PMID: 29781625 DOI: 10.1021/acs.nanolett.8b00334] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation. The structure of the laser combines an InP NW integrated in a cat's eye (CE) antenna. Thanks to the antenna guidance with broken asymmetry, strong focusing ability, and high Q-factor, the designed InP CE-NW lasers exhibit a higher degree of polarization, narrower emission angle, enhanced internal quantum efficiency, and reduced lasing threshold. Hence, this NW laser-antenna system provides a very promising approach toward the achievement of high-performance nanoscale lasers, with excellent prospects for use as highly localized light sources in present and future integrated nanophotonics systems for applications in advanced sensing, high-resolution imaging, and quantum communications.
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Affiliation(s)
- Wei-Zong Xu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Fang-Fang Ren
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Dimitars Jevtics
- Institute of Photonics, SUPA Department of Physics , University of Strathclyde, Technology and Innovation Centre , 99 George Street , G1 1RD Glasgow , United Kingdom
| | - Antonio Hurtado
- Institute of Photonics, SUPA Department of Physics , University of Strathclyde, Technology and Innovation Centre , 99 George Street , G1 1RD Glasgow , United Kingdom
| | - Li Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Jiandong Ye
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
| | - Fan Wang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
- Institute for Biomedical Materials and Devices (IBMD), Faculty of Science , University of Technology Sydney , Sydney , New South Wales 2007 , Australia
| | - Benoit Guilhabert
- Institute of Photonics, SUPA Department of Physics , University of Strathclyde, Technology and Innovation Centre , 99 George Street , G1 1RD Glasgow , United Kingdom
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Hai Lu
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Rong Zhang
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Martin D Dawson
- Institute of Photonics, SUPA Department of Physics , University of Strathclyde, Technology and Innovation Centre , 99 George Street , G1 1RD Glasgow , United Kingdom
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
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50
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Gagliano L, Kruijsse M, Schefold JDD, Belabbes A, Verheijen MA, Meuret S, Koelling S, Polman A, Bechstedt F, Haverkort J, Bakkers E. Efficient Green Emission from Wurtzite Al xIn 1- xP Nanowires. NANO LETTERS 2018; 18:3543-3549. [PMID: 29701976 PMCID: PMC6002781 DOI: 10.1021/acs.nanolett.8b00621] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2018] [Revised: 04/18/2018] [Indexed: 06/01/2023]
Abstract
Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite Al xIn1- xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite Al xIn1- xP using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.
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Affiliation(s)
- L. Gagliano
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - M. Kruijsse
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - J. D. D. Schefold
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
| | - A. Belabbes
- Institut
für Festkörpertheorie und -optik, Friedrich-Schiller-Universitat, Max-Wien-Platz 1, D-07743 Jena, Germany
| | - M. A. Verheijen
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
- Philips
Innovation Laboratories Eindhoven, High Tech Campus 11, 5656AE Eindhoven, The Netherlands
| | - S. Meuret
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
| | - S. Koelling
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - A. Polman
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
| | - F. Bechstedt
- Institut
für Festkörpertheorie und -optik, Friedrich-Schiller-Universitat, Max-Wien-Platz 1, D-07743 Jena, Germany
| | - J.E.M. Haverkort
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - E.P.A.M. Bakkers
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2600 GA Delft, The Netherlands
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