Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels

The excessive power consumption is challenging for phase change memory (PCM) on its way to becoming universal memory in complex hierarchies of memory systems. Here, from the perspective of device structure, by adding a nanocurrent-channel (NCC) layer between the electrode layer and phase change layer, a RESET power consumption reduction by more than 95% and 10 times faster SET speed were realized simultaneously. Through the first principle calculations, Au and SiO2 were screened as the metal and insulating matrix material of NCC layer, respectively. Our PCM device with a Au-SiO2 NCC layer shows an ultralow RESET power consumption, down to 381 fJ, and an ultrafast SET speed (8 ns). Much higher current density near NCC in the phase change layer and thermal barrier effect of insulating matrix material were confirmed by finite element analysis (FEA), and the role of Au nanochannels was revealed by transmission electron microscopy (TEM). Our NCC layer structure provides a simple and practicable method to significantly decrease PCM power consumption.

Phase-change memory via a phase-changeable self-confined nano-filament

Phase-change memory (PCM) has been considered a promising candidate for solving von Neumann bottlenecks owing to its low latency, non-volatile memory property and high integration density1,2. However, PCMs usually require a large current for the reset process by melting the phase-change material into an amorphous phase, which deteriorates the energy efficiency2-5. Various studies have been conducted to reduce the operation current by minimizing the device dimensions, but this increases the fabrication cost while the reduction of the reset current is limited6,7. Here we show a device for reducing the reset current of a PCM by forming a phase-changeable SiTex nano-filament. Without sacrificing the fabrication cost, the developed nano-filament PCM achieves an ultra-low reset current (approximately 10 μA), which is about one to two orders of magnitude smaller than that of highly scaled conventional PCMs. The device maintains favourable memory characteristics such as a large on/off ratio, fast speed, small variations and multilevel memory properties. Our finding is an important step towards developing novel computing paradigms for neuromorphic computing systems, edge processors, in-memory computing systems and even for conventional memory applications.

Designing Conductive-Bridge Phase-Change Memory to Enable Ultralow Programming Power

Phase-change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting the data storage density. One may drastically reduce the programming power by patterning the PCM volume down to nanometer scale, but that route incurs a stiff penalty from the tremendous cost associated with the complex nanofabrication protocols required. Instead, here a materials solution to resolve this dilemma is offered. The authors work with memory cells of conventional dimensions, but design/exploit a PCM alloy that decomposes into a heterogeneous network of nanoscale crystalline domains intermixed with amorphous ones. The idea is to confine the subsequent phase-change switching in the interface region of the crystalline nanodomain with its amorphous surrounding, forming/breaking "nano-bridges" that link up the crystalline domains into a conductive path. This conductive-bridge switching mechanism thus only involves nanometer-scale volume in programming, despite of the large areas in contact with the electrodes. The pore-like devices based on spontaneously phase-separated Ge13 Sb71 O16 alloy enable a record-low programming energy, down to a few tens of femtojoule. The new PCM/fabrication is fully compatible with the current 3D integration technology, adding no expenses or difficulty in processing.

Fabrication of Nanodevices Through Block Copolymer Self-Assembly

Block copolymer (BCP) self-assembly, as a novel bottom-up patterning technique, has received increasing attention in the manufacture of nanodevices because of its significant advantages of high resolution, high throughput, low cost, and simple processing. BCP self-assembly provides a very powerful approach to constructing diverse nanoscale templates and patterns that meet large-scale manufacturing practices. For the past 20 years, the self-assembly of BCPs has been extensively employed to produce a range of nanodevices, such as nonvolatile memory, bit-patterned media (BPM), fin field-effect transistors (FinFETs), photonic nanodevices, solar cells, biological and chemical sensors, and ultrafiltration membranes, providing a variety of configurations for high-density integration and cost-efficient manufacturing. In this review, we summarize the recent progress in the fabrication of nanodevices using the templates of BCP self-assembly, and present current challenges and future opportunities.

Switching-Modulated Phase Change Memory Realized by Si-Containing Block Copolymers

The phase change memory (PCM) is one of the key enabling memory technologies for next-generation non-volatile memory device applications due to its high writing speed, excellent endurance, long retention time, and good scalability. However, the high power consumption of PCM devices caused by the high switching current from a high resistive state to a low resistive state is a critical obstacle to be resolved before widespread commercialization can be realized. Here, a useful approach to reduce the writing current of PCM, which depends strongly on the contact area between the heater electrode and active layer, by employing self-assembly process of Si-containing block copolymers (BCPs) is presented. Self-assembled insulative BCP pattern geometries can locally block the current path of the contact between a high resistive film (TiN) and a phase-change material (Ge₂ Sb₂ Te₅ ), resulting in a significant reduction of the writing current. Compared to a conventional PCM cell, the BCP-modified PCM shows excellent switching power reduction up to 1/20 given its use of self-assembled hybrid SiFe_x O_y /SiO_x dot-in-hole nanostructures. This BCP-based bottom-up process can be extended to various applications of other non-volatile memory devices, such as resistive switching memory and magnetic storage devices.

Self-Aligned Assembly of a Poly(2-vinylpyridine)-b-Polystyrene-b-Poly(2-vinylpyridine) Triblock Copolymer on Graphene Nanoribbons

Directed self-assembly (DSA) of block copolymers is one of the most promising patterning techniques for patterning sub-10 nm features. However, at such small feature sizes, it is becoming increasingly difficult to fabricate the guiding pattern for the DSA process, and it is necessary to explore alternative guiding methods for DSA to achieve long-range ordered alignment. Here, we report the self-aligned assembly of a triblock copolymer, poly(2-vinylpyridine)-b-polystyrene-b-poly(2-vinylpyridine) (P2VP-b-PS-b-P2VP) on neutral graphene nanoribbons with the gap consisting of a P2VP-preferential silicon oxide (SiO₂) substrate via solvent vapor annealing. The assembled P2VP-b-PS-b-P2VP demonstrated long-range, one-dimensional alignment on the graphene substrate in a direction perpendicular to the boundary of the graphene and substrate with a half-pitch size of 8 nm, which greatly alleviates the lithography resolution required for traditional chemoepitaxy DSA. A wide processing window is demonstrated with the gap between graphene stripes varying from 10 to 100 nm, overcoming the restriction on widths of guiding patterns to have commensurate domain spacing. When the gap was reduced to 10 nm, P2VP-b-PS-b-P2VP formed a straight-line pattern on both the graphene and the substrate. Monte Carlo simulations showed that the self-aligned assembly of the triblock copolymer on the graphene nanoribbons is guided at the boundary of parallel and perpendicular lamellae on graphene and SiO₂, respectively. Simulations also indicate that the swelling of a system allows for rapid rearrangement of chains and quickly anneal any misaligned grains and defects. The effect of the interaction strength between SiO₂ and P2VP on the self-assembly is systematically investigated in simulations.

High performance floating self-excited sliding triboelectric nanogenerator for micro mechanical energy harvesting

Non-contact triboelectric nanogenerator (TENG) enabled for both high conversion efficiency and durability is appropriate to harvest random micro energy owing to the advantage of low driving force. However, the low output (<10 μC m^-2) of non-contact TENG caused by the drastic charge decay limits its application. Here, we propose a floating self-excited sliding TENG (FSS-TENG) by a self-excited amplification between rotator and stator to achieve self-increased charge density, and the air breakdown model of non-contact TENG is given for a maximum charge density. The charge density up to 71.53 μC m^-2 is achieved, 5.46 times as that of the traditional floating TENG. Besides, the high output enables it to continuously power small electronics at 3 m s^-1 weak wind. This work provides an effective strategy to address the low output of floating sliding TENG, and can be easily adapted to capture the varied micro mechanical energies anywhere.

Phase-Separated Nanophotonic Structures by Inkjet Printing

The spontaneous phase separation of two or more polymers is a thermodynamic process that can take place in both biological and synthetic materials and which results in the structuring of the matter from the micro- to the nanoscale. For photonic applications, it allows forming quasi-periodic or disordered assemblies of light scatterers at high throughput and low cost. The wet process methods currently used to fabricate phase-separated nanostructures (PSNs) limit the design possibilities, which in turn hinders the deployment of PSNs in commercialized products. To tackle this shortcoming, we introduce a versatile and industrially scalable deposition method based on the inkjet printing of a polymer blend, leading to PSNs with a feature size that is tuned from a few micrometers down to sub-100 nm. Consequently, PSNs can be rapidly processed into the desired macroscopic design. We demonstrate that these printed PSNs can improve light management in manifold photonic applications, exemplified here by exploiting them as a light extraction layer and a metasurface for light-emitting devices and point-of-care biosensors, respectively.

A Flash-Induced Robust Cu Electrode on Glass Substrates and Its Application for Thin-Film μLEDs

A robust Cu conductor on a glass substrate for thin-film μLEDs using the flash-induced chemical/physical interlocking between Cu and glass is reported. During millisecond light irradiation, CuO nanoparticles (NPs) on the display substrate are transformed into a conductive Cu film by reduction and sintering. At the same time, intensive heating at the boundary of CuO NPs and glass chemically induces the formation of an ultrathin Cu₂ O interlayer within the Cu/glass interface for strong adhesion. Cu nanointerlocking occurs by transient glass softening and interface fluctuation to increase the contact area. Owing to these flash-induced interfacial interactions, the flash-activated Cu electrode exhibits an adhesion energy of 10 J m^-2 , which is five times higher than that of vacuum-deposited Cu. An AlGaInP thin-film vertical μLED (VLED) forms an electrical interconnection with the flash-induced Cu electrode via an ACF bonding process, resulting in a high optical power density of 41 mW mm^-2 . The Cu conductor enables reliable VLED operation regardless of harsh thermal stress and moisture infiltration under a high-temperature storage test, temperature humidity test, and thermal shock test. 50 × 50 VLED arrays transferred onto the flash-induced robust Cu electrode show high illumination yield and uniform distribution of forward voltage, peak wavelength, and device temperature.

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that has attracted high interest in recent years due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution. In this paper, we review the main principles of directed self-assembly of block copolymers and give a brief overview of some of the most extended applications. We present a novel fabrication route based on the introduction of directed self-assembly of block copolymers as a patterning option for the fabrication of nanoelectromechanical systems. As a proof of concept, we demonstrate the fabrication of suspended silicon membranes clamped by dense arrays of single-crystal silicon nanowires of sub-10 nm diameter. Resulting devices can be further developed for building up high-sensitive mass sensors based on nanomechanical resonators.

Flexible Piezoelectric Acoustic Sensors and Machine Learning for Speech Processing

Flexible piezoelectric acoustic sensors have been developed to generate multiple sound signals with high sensitivity, shifting the paradigm of future voice technologies. Speech recognition based on advanced acoustic sensors and optimized machine learning software will play an innovative interface for artificial intelligence (AI) services. Collaboration and novel approaches between both smart sensors and speech algorithms should be attempted to realize a hyperconnected society, which can offer personalized services such as biometric authentication, AI secretaries, and home appliances. Here, representative developments in speech recognition are reviewed in terms of flexible piezoelectric materials, self-powered sensors, machine learning algorithms, and speaker recognition.

Modulation of surface physics and chemistry in triboelectric energy harvesting technologies

Mechanical energy harvesting technology converting mechanical energy wasted in our surroundings to electrical energy has been regarded as one of the critical technologies for self-powered sensor network and Internet of Things (IoT). Although triboelectric energy harvesters based on contact electrification have attracted considerable attention due to their various advantages compared to other technologies, a further improvement of the output performance is still required for practical applications in next-generation IoT devices. In recent years, numerous studies have been carried out to enhance the output power of triboelectric energy harvesters. The previous research approaches for enhancing the triboelectric charges can be classified into three categories: i) materials type, ii) device structure, and iii) surface modification. In this review article, we focus on various mechanisms and methods through the surface modification beyond the limitations of structural parameters and materials, such as surficial texturing/patterning, functionalization, dielectric engineering, surface charge doping and 2D material processing. This perspective study is a cornerstone for establishing next-generation energy applications consisting of triboelectric energy harvesters from portable devices to power industries.

Electrochemically Assembled Cu2O Nanoparticles Using Crystallographically Anisotropic Functional Metal Ions and Highly Expeditious Resistive Switching via Nanoparticle Coarsening

We have developed an artificially controllable strategy of an electrodeposition process adequate for resistive random-access memory (ReRAM) applications of binary Cu₂O. Typically, the precise control of OH^- ion concentration (the intermediate supplier of oxygen ions) at the electrode's surface decides the overall reaction rate of the Cu₂O. Here, the suggested Pb and Sb metal additives preferentially contribute to the consumption of OH^- ions and the supply of OH^- ions, respectively, during the Cu₂O electrochemical reaction so that the final products are the (200) preferential quadrangular pyramids and the (111) preferential triangular pyramids. Interestingly, the coexistence of Sb/Pb precursors in the Cu electrolytes results in extraordinarily decreased reaction rate from the opposite action of OH^- ion utilization as well as intense progressive growth behavior, and the resultant Cu₂O films consist of crystallized small-size nanoparticles (NPs) in an amorphous-like matrix. In the case of ReRAM applications, while the polycrystalline film induces irregular device performance and the amorphous layer shows an easily irreparable electrical breakdown, our NP-assembled Cu₂O films from Pb/Sb metal ions reveal the formation of a conduction bridge via phase change to a crystalline filament with no need for forming voltage and with superior electrical stability. It is attributed to the coalescence of crystal NPs into large grains during the set/reset cycle process for the heat dissipation of Joule heating. The Cu₂O sample prepared with a 3 mM Sb + 3 mM Pb mixture solution exhibits forming-free ReRAM devices with high on/off resistance ratios of 1.2 × 10⁴ and long-term electrical/thermal stability.

Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators

Memristor devices based on electrochemical metallization operate through electrochemical formation/dissolution of nanoscale metallic filaments, and they are considered a promising future nonvolatile memory because of their outstanding characteristics over conventional charge-based memories. However, nanoscale conductive paths or filaments precipitated from the redox process of metallic elements are randomly formed inside oxides, resulting in unexpected and stochastic memristive switching parameters including the operating voltage and the resistance state. Here, we present the guided formation of conductive filaments in Ag nanocone/SiO₂ nanomesh/Pt memristors fabricated by high-resolution nanotransfer printing. Consequently, the uniformity of the memristive switching behavior is significantly improved by the existence of electric-field concentrator arrays consisting of Ag nanocones embedded in SiO₂ nanomesh structures. This selective and controlled filament growth was experimentally supported by analyzing simultaneously the surface morphology and current-mapping results using conductive atomic force microscopy. Moreover, stable multilevel switching operations with four discrete conduction states were achieved by the nanopatterned memristor device, demonstrating its potential in high-density nanoscale memory devices.

Rapid ordering of block copolymer thin films

Block-copolymers self-assemble into diverse morphologies, where nanoscale order can be finely tuned via block architecture and processing conditions. However, the ultimate usage of these materials in real-world applications may be hampered by the extremely long thermal annealing times-hours or days-required to achieve good order. Here, we provide an overview of the fundamentals of block-copolymer self-assembly kinetics, and review the techniques that have been demonstrated to influence, and enhance, these ordering kinetics. We discuss the inherent tradeoffs between oven annealing, solvent annealing, microwave annealing, zone annealing, and other directed self-assembly methods; including an assessment of spatial and temporal characteristics. We also review both real-space and reciprocal-space analysis techniques for quantifying order in these systems.

Hierarchical Manipulation of Block Copolymer Patterns on 3D Topographic Substrates: Beyond Graphoepitaxy

Templates of complex nanopatterns in a form of hierarchically sequenced dots and stripes can be generated in block copolymer films on lithography-free 3D topographic substrates. The approach exploits thickness- and swelling-responsive morphological behavior of block copolymers, and demonstrates novel possibilities of topography-guided registration of nanopatterns due to periodic confinement and spontaneous orthogonal flow-fields.

Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio

Flexible self-powered sensing is urgently needed for wearable, portable, sustainable, maintenance-free and long-term applications. Here, we developed a flexible and self-powered GaN membrane-based ultraviolet (UV) photoswitch with high on/off ratio and excellent sensitivity. Even without any power supply, the driving force of UV photogenerated carriers can be well boosted by the combination of both built-in electric field and piezoelectric polarization field. The asymmetric metal-semiconductor-metal structure has been elaborately utilized to enhance the carrier separation and transport for highly sensitive UV photoresponse. Its UV on/off ratio and detection sensitivity reach to 4.67 × 10(5) and 1.78 × 10(12) cm·Hz(0.5) W(1-), respectively. Due to its excellent mechanical flexibility, the piezoelectric polarization field in GaN membrane can be easily tuned/controlled based on piezo-phototronic effect. Under 1% strain, a stronger and broader depletion region can be obtained to further enhance UV on/off ratio up to 154%. As a result, our research can not only provide a deep understanding of local electric field effects on self-powered optoelectronic detection, but also promote the development of self-powered flexible optoelectronic devices and integrated systems.

Microdomain orientation control of PS-b-PMMA films enabled by wettability relay of graphene

A substrate-independent method to control the orientation of PS-b-PMMA film is presented by utilizing monolayer graphene coated PS-r-PMMA copolymer layer.

Stretchable piezoelectric nanocomposite generator

Piezoelectric energy conversion that generate electric energy from ambient mechanical and vibrational movements is promising energy harvesting technology because it can use more accessible energy resources than other renewable natural energy. In particular, flexible and stretchable piezoelectric energy harvesters which can harvest the tiny biomechanical motions inside human body into electricity properly facilitate not only the self-powered energy system for flexible and wearable electronics but also sensitive piezoelectric sensors for motion detectors and in vivo diagnosis kits. Since the piezoelectric ZnO nanowires (NWs)-based energy harvesters (nanogenerators) were proposed in 2006, many researchers have attempted the nanogenerator by using the various fabrication process such as nanowire growth, electrospinning, and transfer techniques with piezoelectric materials including polyvinylidene fluoride (PVDF) polymer and perovskite ceramics. In 2012, the composite-based nanogenerators were developed using simple, low-cost, and scalable methods to overcome the significant issues with previously-reported energy harvester, such as insufficient output performance and size limitation. This review paper provides a brief overview of flexible and stretchable piezoelectric nanocomposite generator for realizing the self-powered energy system with development history, power performance, and applications.

Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires

The thermal conduction characteristics of GeTe and Ge2Sb2Te5(GST) nanowires were investigated using an optical method to determine the local temperature by Raman spectroscopy. Since the localization of surface charge in a single-crystalline nanostructure can enhance charge-phonon scattering, the thermal conductivity value (κ) of single crystalline GeTe and GST nanowires was decreased significantly to 1.44 Wm(-1) K(-1) for GeTe and 1.13 Wm(-1) K(-1) for GST, compared to reported values for polycrystalline structures. The SET-to-RESET state in single-crystalline GeTe and GST nanowires are characteristic of a memory device. Unlike previous reports using GeTe and GST nanowires, the SET-to-RESET characteristics showed a bipolar switching shape and no unipolar switching. In addition, after multiple cycles of operation, a significant change in morphology and composition was observed without any structural phase transition, indicating that atoms migrate toward the cathode or anode, depending on their electronegativities. This change caused by a field effect indicates that the structural phase transition does not occur in the case of GeTe and GST nanowires with a significantly lowered thermal conductivity and stable crystalline structure. Finally, the formation of voids and hillocks as the result of the electromigration critically degrades device reliability.

Performance Enhancement of Electronic and Energy Devices via Block Copolymer Self-Assembly

The use of self-assembled block copolymers (BCPs) for the fabrication of electronic and energy devices has received a tremendous amount of attention as a non-traditional approach to patterning integrated circuit elements at nanometer dimensions and densities inaccessible to traditional lithography techniques. The exquisite control over the dimensional features of the self-assembled nanostructures (i.e., shape, size, and periodicity) is one of the most attractive properties of BCP self-assembly. Harmonic spatial arrangement of the self-assembled nanoelements at desired positions on the chip may offer a new strategy for the fabrication of electronic and energy devices. Several recent reports show the great promise in using BCP self-assembly for practical applications of electronic and energy devices, leading to substantial enhancements of the device performance. Recent progress is summarized here, with regard to the performance enhancements of non-volatile memory, electrical sensor, and energy devices enabled by directed BCP self-assembly.

Self-Structured Conductive Filament Nanoheater for Chalcogenide Phase Transition

Ge2Sb2Te5-based phase-change memories (PCMs), which undergo fast and reversible switching between amorphous and crystalline structural transformation, are being utilized for nonvolatile data storage. However, a critical obstacle is the high programming current of the PCM cell, resulting from the limited pattern size of the optical lithography-based heater. Here, we suggest a facile and scalable strategy of utilizing self-structured conductive filament (CF) nanoheaters for Joule heating of chalcogenide materials. This CF nanoheater can replace the lithographical-patterned conventional resistor-type heater. The sub-10 nm contact area between the CF and the phase-change material achieves significant reduction of the reset current. In particular, the PCM cell with a single Ni filament nanoheater can be operated at an ultralow writing current of 20 μA. Finally, phase-transition behaviors through filament-type nanoheaters were directly observed by using transmission electron microscopy.

Flexible one diode-one phase change memory array enabled by block copolymer self-assembly

Flexible memory is the fundamental component for data processing, storage, and radio frequency communication in flexible electronic systems. Among several emerging memory technologies, phase-change random-access memory (PRAM) is one of the strongest candidate for next-generation nonvolatile memories due to its remarkable merits of large cycling endurance, high speed, and excellent scalability. Although there are a few approaches for flexible phase-change memory (PCM), high reset current is the biggest obstacle for the practical operation of flexible PCM devices. In this paper, we report a flexible PCM realized by incorporating nanoinsulators derived from a Si-containing block copolymer (BCP) to significantly lower the operating current of the flexible memory formed on plastic substrate. The reduction of thermal stress by BCP nanostructures enables the reliable operation of flexible PCM devices integrated with ultrathin flexible diodes during more than 100 switching cycles and 1000 bending cycles.

Resistive switching in high-density nanodevices fabricated by block copolymer self-assembly

Bipolar resistive switching memories based on metal oxides offer a great potential in terms of simple process integration, memory performance, and scalability. In view of ultrahigh density memory applications, a reduced device size is not the only requirement, as the distance between different devices is a key parameter. By exploiting a bottom-up fabrication approach based on block copolymer self-assembling, we obtained the parallel production of bilayer Pt/Ti top electrodes arranged in periodic arrays over the HfO2/TiN surface, building memory devices with a diameter of 28 nm and a density of 5 × 10(10) devices/cm(2). For an electrical characterization, the sharp conducting tip of an atomic force microscope was adopted for a selective addressing of the nanodevices. The presence of devices showing high conductance in the initial state was directly connected with scattered leakage current paths in the bare oxide film, while with bipolar voltage operations we obtained reversible set/reset transitions irrespective of the conductance variability in the initial state. Finally, we disclosed a scalability limit for ultrahigh density memory arrays based on continuous HfO2 thin films, in which a cross-talk between distinct nanodevices can occur during both set and reset transitions.

Graphene/phase change material nanocomposites: light-driven, reversible electrical resistivity regulation via form-stable phase transitions

Innovative photoresponsive materials are needed to address the complexity of optical control systems. Here, we report a new type of photoresponsive nanomaterial composed of graphene and a form-stable phase change material (PCM) that exhibited a 3 orders of magnitude change in electrical resistivity upon light illumination while retaining its overall original solid form at the macroscopic level. This dramatic change in electrical resistivity also occurred reversibly through the on/off control of light illumination. This was attributed to the reversible phase transition (i.e., melting/recrystallization) behavior of the microscopic crystalline domains present in the form-stable PCM. The reversible phase transition observed in the graphene/PCM nanocomposite was induced by a reversible temperature change through the on/off control of light illumination because graphene can effectively absorb light energy and convert it to thermal energy. In addition, this graphene/PCM nanocomposite also possessed excellent mechanical properties. Such photoresponsive materials have many potential applications, including flexible electronics.

Topographically-designed triboelectric nanogenerator via block copolymer self-assembly

Herein, we report a facile and robust route to nanoscale tunable triboelectric energy harvesters realized by the formation of highly functional and controllable nanostructures via block copolymer (BCP) self-assembly. Our strategy is based on the incorporation of various silica nanostructures derived from the self-assembly of BCPs to enhance the characteristics of triboelectric nanogenerators (TENGs) by modulating the contact-surface area and the frictional force. Our simulation data also confirm that the nanoarchitectured morphologies are effective for triboelectric generation.

Reliable control of filament formation in resistive memories by self-assembled nanoinsulators derived from a block copolymer

Resistive random access memory (ReRAM) is a promising candidate for future nonvolatile memories. Resistive switching in a metal-insulator-metal structure is generally assumed to be caused by the formation/rupture of nanoscale conductive filaments (CFs) under an applied electric field. The critical issue of ReRAM for practical memory applications, however, is insufficient repeatability of the operating voltage and resistance ratio. Here, we present an innovative approach to reliably and reproducibly control the CF growth in unipolar NiO resistive memory by exploiting uniform formation of insulating SiOx nanostructures from the self-assembly of a Si-containing block copolymer. In this way, the standard deviation (SD) of set and reset voltages was markedly reduced by 76.9% and 59.4%, respectively. The SD of high resistance state also decreased significantly, from 6.3 × 10(7) Ω to 5.4 × 10(4) Ω. Moreover, we report direct observations of localized metallic Ni CF formation and their controllable growth using electron microscopy and discuss electrothermal simulation results based on the finite element method supporting our analysis results.

Dynamic observation of phase transformation behaviors in indium(III) selenide nanowire based phase change memory

Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM.

Controlling of 6 nm sized and 10 nm pitched dot arrays ordered along narrow guide lines using PS-PDMS self-assembly

We have studied graphoepitaxy to make nanodots or nanolines ordered along electron beam (EB)-drawn resist guide using block copolymers (BCPs) of polystyrene-polydimethylsiloxane (PS-PDMS). We found out that the number n of ordered molecular dot arrays in the line gap increases stepwise with the gap between guide lines. The n self-assembled dot arrays were ordered in a gap between n and n+1 times the mean PDMS pitch and self-assembled with no guide pattern. According to the ordering characteristics, 6 nm sized and 10 nm pitched PDMS dot arrays were formed using the BCP self-assembly with the guide lines.

Deconvoluting the mechanism of microwave annealing of block copolymer thin films

The self-assembly of block copolymer (BCP) thin films is a versatile method for producing periodic nanoscale patterns with a variety of shapes. The key to attaining a desired pattern or structure is the annealing step undertaken to facilitate the reorganization of nanoscale phase-segregated domains of the BCP on a surface. Annealing BCPs on silicon substrates using a microwave oven has been shown to be very fast (seconds to minutes), both with and without contributions from solvent vapor. The mechanism of the microwave annealing process remains, however, unclear. This work endeavors to uncover the key steps that take place during microwave annealing, which enable the self-assembly process to proceed. Through the use of in situ temperature monitoring with a fiber optic temperature probe in direct contact with the sample, we have demonstrated that the silicon substrate on which the BCP film is cast is the dominant source of heating if the doping of the silicon wafer is sufficiently low. Surface temperatures as high as 240 °C are reached in under 1 min for lightly doped, high resistivity silicon wafers (n- or p-type). The influence of doping, sample size, and BCP composition was analyzed to rule out other possible mechanisms. In situ temperature monitoring of various polymer samples (PS, P2VP, PMMA, and the BCPs used here) showed that the polymers do not heat to any significant extent on their own with microwave irradiation of this frequency (2.45 GHz) and power (∼600 W). It was demonstrated that BCP annealing can be effectively carried out in 60 s on non-microwave-responsive substrates, such as highly doped silicon, indium tin oxide (ITO)-coated glass, glass, and Kapton, by placing a piece of high resistivity silicon wafer in contact with the sample-in this configuration, the silicon wafer is termed the heating element. Annealing and self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) and polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) BCPs into horizontal cylinder structures were shown to take place in under 1 min, using a silicon wafer heating element, in a household microwave oven. Defect densities were calculated and were shown to decrease with higher maximum obtained temperatures. Conflicting results in the literature regarding BCP annealing with microwave are explained in light of the results obtained in this study.

Flexible one diode–one resistor resistive switching memory arrays on plastic substrates

Flexible one diode–one resistor resistive random access memory (RRAM) with 8 × 8 arrays composed of high-performance silicon diodes and a resistive change material for fully functional flexible memory operation.

Conversion of bilayers of PS-b-PDMS block copolymer into closely packed, aligned silica nanopatterns

Block copolymer (BCP) self-assembly is an effective and versatile approach for the production of complex nanopatterned interfaces. Monolayers of BCP films can be harnessed to produce a variety of different patterns, including lines, with specific spacings and order. In this work, bilayers of cylinder-forming polystyrene-block-polydimethylsiloxane block copolymer (PS-b-PDMS) were transformed into arrays of silica lines with half the pitch normally attained for conventional monolayers, with the PDMS acting as the source for the SiOx. The primary hurdle was ensuring the bilayer silica lines were distinctly separate; to attain the control necessary to prevent overlap, a number of variables related to the materials and self-assembly process were investigated in detail. Developing a detailed understanding of BCP film swelling during solvent annealing, blending of the PS-b-PDMS with PS homopolymer, utilization of a surface brush layer, and adjustment of the plasma exposure conditions, distinct and separate silica lines were prepared. On the microscale, the sample coverage of PS-b-PDMS bilayers was investigated and maximized to attain >95% bilayers under defined conditions. The bilayer BCP structures were also amenable to graphoepitaxy, and thus, dense and highly ordered arrays of silica line patterns with tightly controlled width and pitch were fabricated and distributed uniformly across a Si surface.