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Zhang P, Jia Y, Liu Z, Zhou X, Xiao D, Chen Y, Jia H, Yang R. Probing Linear to Nonlinear Damping in 2D Semiconductor Nanoelectromechanical Resonators toward a Unified Quality Factor Model. NANO LETTERS 2023; 23:9375-9382. [PMID: 37788247 DOI: 10.1021/acs.nanolett.3c02691] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/05/2023]
Abstract
In resonant nanoelectromechanical systems (NEMS), the quality (Q) factor is essential for sensing, communication, and computing applications. While a large vibrational amplitude is useful for increasing the signal-to-noise ratio, the damping in this regime is more complex because both linear and nonlinear damping are important, and an accurate model for Q has not been fully explored. Here, we demonstrate that by combining the time-domain ringdown and frequency-domain resonance measurements, we extract the accurate Q for two-dimensional (2D) MoS2 and MoTe2 NEMS resonators at different vibration amplitudes. In particular, in the transition region between linear and nonlinear damping, Q can be precisely extracted by fitting to the ringdown characteristics. By varying AC driving, we tune the Q by ΔQ/Q = 269% and extract the nonlinear damping coefficient. We develop the dissipation model that well captures the linear to nonlinear damping, providing important insights for accurately modeling and optimizing Q in 2D NEMS resonators.
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Affiliation(s)
- Pengcheng Zhang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yueyang Jia
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zuheng Liu
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xin Zhou
- College of Intelligence Science, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Dingbang Xiao
- College of Intelligence Science, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Ying Chen
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Hao Jia
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Rui Yang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shanghai Jiao Tong University, Shanghai 200240, China
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2
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Sakharova NA, Pereira AFG, Antunes JM. A Study of the Mechanical Behaviour of Boron Nitride Nanosheets Using Numerical Simulation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2759. [PMID: 37887910 PMCID: PMC10609048 DOI: 10.3390/nano13202759] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2023] [Revised: 10/04/2023] [Accepted: 10/11/2023] [Indexed: 10/28/2023]
Abstract
Hexagonal boron nitride (h-BN) nanosheets are attractive materials for various applications that require efficient heat transfer, surface adsorption capability, biocompatibility, and flexibility, such as optoelectronics and power electronics devices, nanoelectromechanical systems, and aerospace industry. Knowledge of the mechanical behavior of boron nitride nanosheets is necessary to achieve accurate design and optimal performance of h-BN-based nanodevices and nanosystems. In this context, the Young's and shear moduli and Poisson's ratio of square and rectangular boron nitride nanosheets were evaluated using the nanoscale continuum modeling approach, also known as molecular structural mechanics. The latter allows robust and rapid assessment of the elastic constants of nanostructures with graphene-like lattices. To date, there is a lack of systematic research regarding the influence of input parameters for numerical simulation, loading conditions, size, and aspect ratio on the elastic properties of the h-BN nanosheets. The current study contributes to filling this gap. The results allow, on the one hand, to point out the input parameters that lead to better agreement with those available in the literature. On the other hand, the Young's and shear moduli, and Poisson's ratio calculated in the present work contribute to a benchmark for the evaluation of elastic constants of h-BN nanosheets using theoretical methods.
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Affiliation(s)
- Nataliya A. Sakharova
- Centre for Mechanical Engineering, Materials and Processes (CEMMPRE), Advanced Production and Intelligent Systems, Associated Laboratory (ARISE), Department of Mechanical Engineering, University of Coimbra, Rua Luís Reis Santos, Pinhal de Marrocos, 3030-788 Coimbra, Portugal; (A.F.G.P.); (J.M.A.)
| | - André F. G. Pereira
- Centre for Mechanical Engineering, Materials and Processes (CEMMPRE), Advanced Production and Intelligent Systems, Associated Laboratory (ARISE), Department of Mechanical Engineering, University of Coimbra, Rua Luís Reis Santos, Pinhal de Marrocos, 3030-788 Coimbra, Portugal; (A.F.G.P.); (J.M.A.)
| | - Jorge M. Antunes
- Centre for Mechanical Engineering, Materials and Processes (CEMMPRE), Advanced Production and Intelligent Systems, Associated Laboratory (ARISE), Department of Mechanical Engineering, University of Coimbra, Rua Luís Reis Santos, Pinhal de Marrocos, 3030-788 Coimbra, Portugal; (A.F.G.P.); (J.M.A.)
- Abrantes High School of Technology, Polytechnic Institute of Tomar, Quinta do Contador, Estrada da Serra, 2300-313 Tomar, Portugal
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3
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Santos EJA, Giozza WF, de Souza Júnior RT, Nepomuceno Cavalcante NJ, Ribeiro Júnior LA, Lopes Lima KA. On the CO[Formula: see text] adsorption in a boron nitride analog for the recently synthesized biphenylene network: a DFT study. J Mol Model 2023; 29:327. [PMID: 37773546 DOI: 10.1007/s00894-023-05709-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 08/28/2023] [Indexed: 10/01/2023]
Abstract
CONTEXT Recent advances in nanomaterial synthesis and characterization have led to exploring novel 2D materials. The biphenylene network (BPN) is a notable achievement in current fabrication efforts. Numerical studies have indicated the stability of its boron nitride counterpart, known as BN-BPN. In this study, we employ computational simulations to investigate the electronic and structural properties of pristine and doped BN-BPN monolayers upon CO[Formula: see text] adsorption. Our findings demonstrate that pristine BN-BPN layers exhibit moderate adsorption energies for CO[Formula: see text] molecules, approximately [Formula: see text]0.16 eV, indicating physisorption. However, introducing one-atom doping with silver, germanium, nickel, palladium, platinum, or silicon significantly enhances CO[Formula: see text] adsorption, leading to adsorption energies ranging from [Formula: see text]0.13 to [Formula: see text]0.65 eV. This enhancement indicates the presence of both physisorption and chemisorption mechanisms. BN-BPN does not show precise CO[Formula: see text] sensing and selectivity. Furthermore, our investigation of the recovery time for adsorbed CO[Formula: see text] molecules suggests that the interaction between BN-BPN and CO[Formula: see text] cannot modify the electronic properties of BN-BPN before the CO[Formula: see text] molecules escape. METHODS We performed density functional theory (DFT) simulations using the DMol3 code in the Biovia Materials Studio software. We incorporated Van der Waals corrections (DFT-D) within the Grimme scheme for an accurate representation. The exchange and correlation functions were treated using the Perdew-Burke-Ernzerhof (PBE) functional within the generalized gradient approximation (GGA). We used a double-zeta plus polarization (DZP) basis set to describe the electronic structure. Additionally, we accounted for the basis set superposition error (BSSE) through the counterpoise method. We included semicore DFT pseudopotentials to accurately model the interactions between the nuclei and valence electrons.
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Affiliation(s)
- Emanuel J A Santos
- Department of Physics, State University of Piauí, Teresina, Piauí, 64002-150, Brazil
| | - William F Giozza
- Faculty of Technology, Department of Electrical Engineering, University of Brasília, Brasília, Brazil
| | - Rafael T de Souza Júnior
- Faculty of Technology, Department of Electrical Engineering, University of Brasília, Brasília, Brazil
| | | | - Luiz A Ribeiro Júnior
- University of Brasilia, Institute of Physics, Brasília, 70910-900, Brazil.
- Computational Materials Laboratory, LCCMat, Institute of Physics, University of Brasília, Brasília, 70910-900, Brazil.
| | - Kleuton A Lopes Lima
- Department of Physics, State University of Piauí, Teresina, Piauí, 64002-150, Brazil
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4
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Sánchez Arribas I, Taniguchi T, Watanabe K, Weig EM. Radiation Pressure Backaction on a Hexagonal Boron Nitride Nanomechanical Resonator. NANO LETTERS 2023; 23:6301-6307. [PMID: 37460106 PMCID: PMC10375595 DOI: 10.1021/acs.nanolett.3c00544] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Hexagonal boron nitride (hBN) is a van der Waals material with excellent mechanical properties hosting quantum emitters and optically active spin defects, with several of them being sensitive to strain. Establishing optomechanical control of hBN will enable hybrid quantum devices that combine the spin degree of freedom with the cavity optomechanical toolbox. In this Letter, we report the first observation of radiation pressure backaction at telecom wavelengths with a hBN drum-head mechanical resonator. The thermomechanical motion of the resonator is coupled to the optical mode of a high finesse fiber-based Fabry-Pérot microcavity in a membrane-in-the-middle configuration. We are able to resolve the optical spring effect and optomechanical damping with a single photon coupling strength of g0/2π = 1200 Hz. Our results pave the way for tailoring the mechanical properties of hBN resonators with light.
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Affiliation(s)
- Irene Sánchez Arribas
- Department of Electrical Engineering, School of Computation, Information and Technology, Technical University of Munich, 85748 Garching, Germany
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Eva M Weig
- Department of Electrical Engineering, School of Computation, Information and Technology, Technical University of Munich, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), 80799 Munich, Germany
- TUM Center for Quantum Engineering (ZQE), 85748 Garching, Germany
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5
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Deng M, Wang X, Xu X, Cui A, Jiang K, Zhang J, Zhu L, Shang L, Li Y, Hu Z, Chu J. Directly measuring flexoelectric coefficients μ11 of the van der Waals materials. MATERIALS HORIZONS 2023; 10:1309-1323. [PMID: 36692359 DOI: 10.1039/d2mh00984f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Flexoelectricity originates from the electromechanical coupling interaction between strain gradient and polarization, broadly applied in developing electromechanical and energy devices. However, the study of quantifying the longitudinal flexoelectric coefficient (μ11) which is important for the application of atomic-scale two-dimensional (2D) materials is still in a slow-moving stage, owing to the technical challenges. Based on the free-standing suspension structure, this paper proposes a widely applicable method and a mensurable formula for determining the μ11 constant of layer-dependent 2D materials with high precision. A combination of in situ micro-Raman spectroscopy and piezoresponse force microscopy (PFM) imaging was used to quantify the strain distribution and effective out-of-plane electromechanical coupling, respectively, for μ11 constant calculation. The μ11 constants and their physical correlation with the variable mechanical conditions of naturally bent structures have been obtained extensively for the representative mono-to-few layered MX2 family (M = W and Mo; X = S and Se), and the result is perfectly consistent with the estimated order-of-magnitude of the μ11 value (about 0.065) of monolayer MoS2. The quantification of the flexoelectric constant in this work not only promotes the understanding of mechanical and electromechanical properties in van der Waals materials, but also paves the way for developing novel 2D nano-energy devices and mechanical transducers based on flexoelectric effects.
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Affiliation(s)
- Menghan Deng
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xiang Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xionghu Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liangqing Zhu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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6
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Jaeger D, Fogliano F, Ruelle T, Lafranca A, Braakman F, Poggio M. Mechanical Mode Imaging of a High-Q Hybrid hBN/Si 3N 4 Resonator. NANO LETTERS 2023; 23:2016-2022. [PMID: 36847481 DOI: 10.1021/acs.nanolett.3c00233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We image and characterize the mechanical modes of a 2D drum resonator made of hBN suspended over a high-stress Si3N4 membrane. Our measurements demonstrate hybridization between various modes of the hBN resonator and those of the Si3N4 membrane. The measured resonance frequencies and spatial profiles of the modes are consistent with finite-element simulations based on idealized geometry. Spectra of the thermal motion reveal that, depending on the degree of hybridization with modes of the heavier and higher-quality-factor Si3N4 membrane, the quality factors and the motional mass of the hBN drum modes can be shifted by orders of magnitude. This effect could be exploited to engineer hybrid drum/membrane modes that combine the low motional mass of 2D materials with the high quality factor of Si3N4 membranes for optomechanical or sensing applications.
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Peng M, Cheng J, Zheng X, Ma J, Feng Z, Sun X. 2D-materials-integrated optoelectromechanics: recent progress and future perspectives. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:026402. [PMID: 36167057 DOI: 10.1088/1361-6633/ac953e] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Accepted: 09/27/2022] [Indexed: 06/16/2023]
Abstract
The discovery of two-dimensional (2D) materials has gained worldwide attention owing to their extraordinary optical, electrical, and mechanical properties. Due to their atomic layer thicknesses, the emerging 2D materials have great advantages of enhanced interaction strength, broad operating bandwidth, and ultralow power consumption for optoelectromechanical coupling. The van der Waals (vdW) epitaxy or multidimensional integration of 2D material family provides a promising platform for on-chip advanced nano-optoelectromechanical systems (NOEMS). Here, we provide a comprehensive review on the nanomechanical properties of 2D materials and the recent advances of 2D-materials-integrated nano-electromechanical systems and nano-optomechanical systems. By utilizing active nanophotonics and optoelectronics as the interface, 2D active NOEMS and their coupling effects are particularly highlighted at the 2D atomic scale. Finally, we share our viewpoints on the future perspectives and key challenges of scalable 2D-materials-integrated active NOEMS for on-chip miniaturized, lightweight, and multifunctional integration applications.
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Affiliation(s)
- Mingzeng Peng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083,People's Republic of China
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region of China
| | - Jiadong Cheng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083,People's Republic of China
| | - Xinhe Zheng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083,People's Republic of China
| | - Jingwen Ma
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region of China
| | - Ziyao Feng
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region of China
| | - Xiankai Sun
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region of China
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8
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Fang Z, Dai Z, Wang B, Tian Z, Yu C, Chen Q, Wei X. Pull-to-Peel of Two-Dimensional Materials for the Simultaneous Determination of Elasticity and Adhesion. NANO LETTERS 2023; 23:742-749. [PMID: 36472369 DOI: 10.1021/acs.nanolett.2c03145] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The flexible and clinging nature of ultrathin films requires an understanding of their elastic and adhesive properties in a wide range of circumstances from fabrications to applications. Simultaneously measuring both properties, however, is extremely difficult as the film thickness diminishes to the nanoscale. Here we address such difficulties through peeling by pulling thin films off from the substrates (we thus refer to it as "pull-to-peel"). Particularly, we perform in situ pull-to-peel of graphene and MoS2 films in a scanning electron microscope and achieve simultaneous determination of their Young's moduli and adhesions to gold substrates. This is in striking contrast to other conceptually similar tests available in the literature, including indentation tests (only measuring elasticity) and spontaneous blisters (only measuring adhesion). Furthermore, we show a weakly nonlinear Hooke's relation for the pull-to-peel response of two-dimensional materials, which may be harnessed for the design of nanoscale force sensors or exploited in other thin-film systems.
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Affiliation(s)
- Zheng Fang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing100871, People's Republic of China
| | - Zhaohe Dai
- Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing100871, People's Republic of China
| | - Bingjie Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing100871, People's Republic of China
| | - Zhongzheng Tian
- School of Integrated Circuits, Peking University, Beijing100871, People's Republic of China
| | - Chuanli Yu
- Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing100871, People's Republic of China
| | - Qing Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing100871, People's Republic of China
| | - Xianlong Wei
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing100871, People's Republic of China
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9
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Bagheri S, Abourahma J, Lu H, Vorobeva NS, Luo S, Gruverman A, Sinitskii A. High-yield fabrication of electromechanical devices based on suspended Ti 3C 2T x MXene monolayers. NANOSCALE 2023; 15:1248-1259. [PMID: 36541680 DOI: 10.1039/d2nr05493k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
MXenes, two-dimensional transition metal carbides, nitrides, and carbonitrides, are known for their exceptional electronic and mechanical properties. Yet, the experimental efforts toward the realization of MXene-based nanoelectromechanical systems (NEMS) combining electrical and mechanical functionalities of MXenes at the nanoscale remain very limited. Here, we demonstrate a high-yield fabrication of the electromechanical devices based on individual suspended monolayer MXene flakes. We employed Ti3C2Tx, the most popular MXene material to date, that can be produced as high-quality micrometer-scale monolayer flakes with a high electrical conductivity of over 10 000 S cm-1 and a high effective Young's modulus of about 330 GPa. These Ti3C2Tx flakes can be transferred over prefabricated trenches in a Si/Si3N4 substrate at a high yield, potentially enabling fabrication of hundreds of electromechanical devices based on suspended MXene monolayers. We demonstrate very clean, uniform, and well-stretched membranes with different dimensions, with Ti3C2Tx flakes suspended over trenches with gaps ranging from 200 nm to 2 μm. The resulting Ti3C2Tx monolayer membranes were electrostatically actuated, while their vertical displacement was monitored using a tip of an atomic force microscope (AFM). The devices reliably responded to the electrostatic actuation in ambient conditions over multiple cycles and with different measurement parameters, such as AC frequency, AC voltage amplitude, and AFM tip loading force. The demonstration of the high-yield fabrication of working electromechanical devices based on suspended Ti3C2Tx MXene membranes at the ultimate monolayer limit paves the way for the future exploration of the potential of MXenes for NEMS applications.
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Affiliation(s)
- Saman Bagheri
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.
| | - Jehad Abourahma
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.
| | - Haidong Lu
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Nataliia S Vorobeva
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.
| | - Shengyuan Luo
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Alexander Sinitskii
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
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10
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Xu B, Zhang P, Zhu J, Liu Z, Eichler A, Zheng XQ, Lee J, Dash A, More S, Wu S, Wang Y, Jia H, Naik A, Bachtold A, Yang R, Feng PXL, Wang Z. Nanomechanical Resonators: Toward Atomic Scale. ACS NANO 2022; 16:15545-15585. [PMID: 36054880 PMCID: PMC9620412 DOI: 10.1021/acsnano.2c01673] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Accepted: 08/12/2022] [Indexed: 06/15/2023]
Abstract
The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to previously unexplored grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes and two-dimensional (2D) atomic layers such as graphene/phosphorene, growing interests and sustained effort have been devoted to creating mechanical devices toward the ultimate limit of miniaturization─genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines.
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Affiliation(s)
- Bo Xu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Pengcheng Zhang
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
| | - Jiankai Zhu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Zuheng Liu
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
| | | | - Xu-Qian Zheng
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- College
of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing210023, China
| | - Jaesung Lee
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- Department
of Electrical and Computer Engineering, University of Texas at El Paso, El Paso, Texas79968, United States
| | - Aneesh Dash
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Swapnil More
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Song Wu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Yanan Wang
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- Department
of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
| | - Hao Jia
- Shanghai
Institute of Microsystem and Information Technology, Chinese Academy
of Sciences, Shanghai200050, China
| | - Akshay Naik
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Adrian Bachtold
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, Castelldefels, Barcelona08860, Spain
| | - Rui Yang
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
- School of
Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai200240, China
| | - Philip X.-L. Feng
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
| | - Zenghui Wang
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
- State
Key Laboratory of Electronic Thin Films and Integrated Devices, University
of Electronic Science and Technology of China, Chengdu610054, China
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11
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Photothermal Responsivity of van der Waals Material-Based Nanomechanical Resonators. NANOMATERIALS 2022; 12:nano12152675. [PMID: 35957105 PMCID: PMC9370576 DOI: 10.3390/nano12152675] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Revised: 07/30/2022] [Accepted: 07/31/2022] [Indexed: 02/04/2023]
Abstract
Nanomechanical resonators made from van der Waals materials (vdW NMRs) provide a new tool for sensing absorbed laser power. The photothermal response of vdW NMRs, quantified from the resonant frequency shifts induced by optical absorption, is enhanced when incorporated in a Fabry–Pérot (FP) interferometer. Along with the enhancement comes the dependence of the photothermal response on NMR displacement, which lacks investigation. Here, we address the knowledge gap by studying electromotively driven niobium diselenide drumheads fabricated on highly reflective substrates. We use a FP-mediated absorptive heating model to explain the measured variations of the photothermal response. The model predicts a higher magnitude and tuning range of photothermal responses on few-layer and monolayer NbSe2 drumheads, which outperform other clamped vdW drum-type NMRs at a laser wavelength of 532 nm. Further analysis of the model shows that both the magnitude and tuning range of NbSe2 drumheads scale with thickness, establishing a displacement-based framework for building bolometers using FP-mediated vdW NMRs.
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12
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Tan D, Cao X, Huang J, Peng Y, Zeng L, Guo Q, Sun N, Bi S, Ji R, Jiang C. Monolayer MXene Nanoelectromechanical Piezo-Resonators with 0.2 Zeptogram Mass Resolution. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201443. [PMID: 35619285 PMCID: PMC9353497 DOI: 10.1002/advs.202201443] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/12/2022] [Revised: 04/26/2022] [Indexed: 06/15/2023]
Abstract
2D materials-based nanoelectromechanical resonant systems with high sensitivity can precisely trace quantities of ultra-small mass molecules and therefore are broadly applied in biological analysis, chemical sensing, and physical detection. However, conventional optical and capacitive transconductance schemes struggle to measure high-order mode resonant effectively, which is the scientific key to further achieving higher accuracy and lower noise. In the present study, the different vibrations of monolayer Ti3 C2 Tx MXene piezo-resonators are investigated, and achieve a high-order f2,3 resonant mode with a ≈234.59 ± 0.05 MHz characteristic peak due to the special piezoelectrical structure of the Ti3 C2 Tx MXene layer. The effective measurements of signals have a low thermomechanical motion spectral density (9.66 ± 0.01 fmHz$\frac{{fm}}{{\sqrt {Hz} }}$ ) and an extensive dynamic range (118.49 ± 0.42 dB) with sub-zeptograms resolution (0.22 ± 0.01 zg) at 300 K temperature and 1 atm. Furthermore, the functional groups of the Ti3 C2 Tx MXene with unique adsorption properties enable a high working range ratio of ≈3100 and excellent repeatability. This Ti3 C2 Tx MXene device demonstrates encouraging performance advancements over other nano-resonators and will lead the related engineering applications including high-sensitivity mass detectors.
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Affiliation(s)
- Dongchen Tan
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Xuguang Cao
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Jijie Huang
- School of Materials EngineeringPurdue UniversityWest LafayetteIN47907USA
| | - Yan Peng
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Lijun Zeng
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Qinglei Guo
- Department of Material Science and EngineeringFrederick Seitz Material Research LaboratoryUniversity of Illinois at Urbana‐ChampaignUrbanaIL61801USA
| | - Nan Sun
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Sheng Bi
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Ruonan Ji
- Department of PhysicsNorthwestern Polytechnical UniversityXi'an710072China
| | - Chengming Jiang
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
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13
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Zhu J, Xu B, Xiao F, Liang Y, Jiao C, Li J, Deng Q, Wu S, Wen T, Pei S, Xia J, Wang Z. Frequency Scaling, Elastic Transition, and Broad-Range Frequency Tuning in WSe 2 Nanomechanical Resonators. NANO LETTERS 2022; 22:5107-5113. [PMID: 35522819 DOI: 10.1021/acs.nanolett.2c00494] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Nanomechanical resonators based on atomic layers of tungsten diselenide (WSe2) offer intriguing prospects for enabling novel sensing and signal processing functions. The frequency scaling law of such resonant devices is critical for designing and realizing these high-frequency circuit components. Here, we elucidate the frequency scaling law for WSe2 nanomechanical resonators by studying devices of one-, two-, three-, to more than 100-layer thicknesses and different diameters. We observe resonant responses in both mechanical limits and clear elastic transition in between, revealing intrinsic material properties and devices parameters such as Young's modulus and pretension. We further demonstrate a broad frequency tuning range (up to 230%) with a high tuning efficiency (up to 23% V-1). Such tuning efficiency is among the highest in resonators based on two-dimensional (2D) layered materials. Our findings can offer important guidelines for designing high-frequency WSe2 resonant devices.
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Affiliation(s)
- Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jing Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qingyang Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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14
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Du W, Yang J, Chen J, Fang H. Interlayer spacing control of boron nitride sheets with hydrated cations. Mol Phys 2022. [DOI: 10.1080/00268976.2022.2092040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
Affiliation(s)
- Wei Du
- Chinese Academy of Sciences, Shanghai Institute of Applied Physics, Shanghai, People’s Republic of China
- University of Chinese Academy of Sciences, Beijing, People’s Republic of China
| | - Junwei Yang
- School of Arts and Sciences, Shanghai Dianji University, Shanghai, People’s Republic of China
| | - Jige Chen
- Chinese Academy of Sciences, Shanghai Institute of Applied Physics, Shanghai, People’s Republic of China
- Shanghai Synchrotron Radiation Facility, Zhangjiang Laboratory, Chinese Academy of Sciences, Shanghai Advanced Research Institute, Shanghai, People’s Republic of China
| | - Haiping Fang
- School of Physics and National Engineering Research Center of Industrial Wastewater Detoxication and Resource Recovery, East China University of Science and Technology, Shanghai, People’s Republic of China
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15
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Sangani LDV, Mandal S, Ghosh S, Watanabe K, Taniguchi T, Deshmukh MM. Dynamics of Interfacial Bubble Controls Adhesion Mechanics in Van der Waals Heterostructure. NANO LETTERS 2022; 22:3612-3619. [PMID: 35389226 DOI: 10.1021/acs.nanolett.1c04341] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional van der Waals heterostructures (vdWH) can result in novel functionality that crucially depends on interfacial structure and disorder. Bubbles at the vdWH interface can modify the interfacial structure. We probe the dynamics of a bubble at the interface of a graphene-hBN vdWH by using it as the drumhead of a NEMS device because nanomechanical devices are exquisite sensors. For drums with different interfacial bubbles, we measure the evolution of the resonant frequency and spatial mode shape as a function of electrostatic pulling. We show that the hysteretic detachment of layers of vdWH is triggered by the growth of large bubbles. The bubble growth takes place due to the concentration of stress resembling the initiation of fracture. The small bubbles at the heterostructure interface do not result in delamination as they are smaller than a critical fracture length. We provide insight into frictional dynamics and interfacial fracture of vdWH.
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Affiliation(s)
- L D Varma Sangani
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Supriya Mandal
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Sanat Ghosh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Mandar M Deshmukh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
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16
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A Review on Graphene-Based Nano-Electromechanical Resonators: Fabrication, Performance, and Applications. MICROMACHINES 2022; 13:mi13020215. [PMID: 35208343 PMCID: PMC8880531 DOI: 10.3390/mi13020215] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2021] [Revised: 01/24/2022] [Accepted: 01/24/2022] [Indexed: 11/16/2022]
Abstract
The emergence of graphene and other two-dimensional materials overcomes the limitation in the characteristic size of silicon-based micro-resonators and paved the way in the realization of nano-mechanical resonators. In this paper, we review the progress to date of the research on the fabrication methods, resonant performance, and device applications of graphene-based nano-mechanical resonators, from theoretical simulation to experimental results, and summarize both the excitation and detection schemes of graphene resonators. In recent years, the applications of graphene resonators such as mass sensors, pressure sensors, and accelerometers gradually moved from theory to experiment, which are specially introduced in this review. To date, the resonance performance of graphene-based nano-mechanical resonators is widely studied by theoretical approaches, while the corresponding experiments are still in the preliminary stage. However, with the continuous progress of the device fabrication and detection technique, and with the improvement of the theoretical model, suspended graphene membranes will widen the potential for ultralow-loss and high-sensitivity mechanical resonators in the near future.
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17
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Callera Aguila MA, Esmenda JC, Wang JY, Lee TH, Yang CY, Lin KH, Chang-Liao KS, Kafanov S, Pashkin YA, Chen CD. Fabry-Perot interferometric calibration of van der Waals material-based nanomechanical resonators. NANOSCALE ADVANCES 2022; 4:502-509. [PMID: 36132699 PMCID: PMC9416946 DOI: 10.1039/d1na00794g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Accepted: 11/21/2021] [Indexed: 06/16/2023]
Abstract
One of the challenges in integrating nanomechanical resonators made from van der Waals materials in optoelectromechanical technologies is characterizing their dynamic properties from vibrational displacement. Multiple calibration schemes using optical interferometry have tackled this challenge. However, these techniques are limited only to optically thin resonators with an optimal vacuum gap height and substrate for interferometric detection. Here, we address this limitation by implementing a modeling-based approach via multilayer thin-film interference for in situ, non-invasive determination of the resonator thickness, gap height, and motional amplitude. This method is demonstrated on niobium diselenide drumheads that are electromotively driven in their linear regime of motion. The laser scanning confocal configuration enables a resolution of hundreds of picometers in motional amplitude for circular and elliptical devices. The measured thickness and spacer height, determined to be in the order of tens and hundreds of nanometers, respectively, are in excellent agreement with profilometric measurements. Moreover, the transduction factor estimated from our method agrees with the result of other studies that resolved Brownian motion. This characterization method, which applies to both flexural and acoustic wave nanomechanical resonators, is robust because of its scalability to thickness and gap height, and any form of reflecting substrate.
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Affiliation(s)
- Myrron Albert Callera Aguila
- National Tsing Hua University Hsinchu 30013 Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica and National Tsing Hua University Taiwan
- Institute of Physics, Academia Sinica Nangang 11529 Taiwan
| | - Joshoua Condicion Esmenda
- National Tsing Hua University Hsinchu 30013 Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica and National Tsing Hua University Taiwan
- Institute of Physics, Academia Sinica Nangang 11529 Taiwan
| | - Jyh-Yang Wang
- Institute of Physics, Academia Sinica Nangang 11529 Taiwan
| | - Teik-Hui Lee
- Institute of Physics, Academia Sinica Nangang 11529 Taiwan
| | - Chi-Yuan Yang
- Institute of Physics, Academia Sinica Nangang 11529 Taiwan
| | - Kung-Hsuan Lin
- Institute of Physics, Academia Sinica Nangang 11529 Taiwan
| | | | - Sergey Kafanov
- Department of Physics, Lancaster University Lancaster LA1 4YB UK
| | - Yuri A Pashkin
- Department of Physics, Lancaster University Lancaster LA1 4YB UK
| | - Chii-Dong Chen
- Institute of Physics, Academia Sinica Nangang 11529 Taiwan
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18
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Ferrari PF, Kim S, van der Zande AM. Dissipation from Interlayer Friction in Graphene Nanoelectromechanical Resonators. NANO LETTERS 2021; 21:8058-8065. [PMID: 34559536 DOI: 10.1021/acs.nanolett.1c02369] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A unique feature of two-dimensional (2D) materials is the ultralow friction at their van der Waals interfaces. A key question in a new generation of 2D heterostructure-based nanoelectromechanical systems (NEMS) is how the low friction interfaces will affect the dynamic performance. Here, we apply the exquisite sensitivity of graphene nanoelectromechanical drumhead resonators to compare the dissipation from monolayer, Bernal-stacked bilayer, and twisted bilayer graphene membranes. We find a significant difference in the average quality factors of three resonator types: 53 for monolayer, 40 for twisted and 31 for Bernal-stacked membranes. We model this difference as a combination of change in stiffness and additional dissipation from interlayer friction during motion. We find even the lowest frictions measured on sliding 2D interfaces are sufficient to alter dissipation in 2D NEMS. This model provides a generalized approach to quantify dissipation in NEMS based on 2D heterostructures which incorporate interlayer slip and friction.
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Affiliation(s)
- Paolo F Ferrari
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - SunPhil Kim
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Arend M van der Zande
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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19
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Esmenda JC, Aguila MAC, Wang J, Lee T, Yang C, Lin K, Chang‐Liao K, Katz N, Kafanov S, Pashkin YA, Chen C. Imaging Off-Resonance Nanomechanical Motion as Modal Superposition. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2005041. [PMID: 34258159 PMCID: PMC8261521 DOI: 10.1002/advs.202005041] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/01/2021] [Revised: 03/15/2021] [Indexed: 06/13/2023]
Abstract
Observation of resonance modes is the most straightforward way of studying mechanical oscillations because these modes have maximum response to stimuli. However, a deeper understanding of mechanical motion can be obtained by also looking at modal responses at frequencies in between resonances. Here, an imaging of the modal responses for a nanomechanical drum driven off resonance is presented. By using the frequency modal analysis, these shapes are described as a superposition of resonance modes. It is found that the spatial distribution of the oscillating component of the driving force, which is affected by both the shape of the actuating electrode and inherent device properties such as asymmetry and initial slack, greatly influences the modal weight or participation. This modal superposition analysis elucidates the dynamics of any nanomechanical system through modal weights. This aids in optimizing mode-specific designs for force sensing and integration with other systems.
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Affiliation(s)
- Joshoua Condicion Esmenda
- National Tsing Hua UniversityHsinchu30013Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia SinicaNational Taiwan University and National Tsing Hua University, Institute of Physics, Academia SinicaNangangTaipei11529Taiwan
| | - Myrron Albert Callera Aguila
- National Tsing Hua UniversityHsinchu30013Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia SinicaNational Taiwan University and National Tsing Hua University, Institute of Physics, Academia SinicaNangangTaipei11529Taiwan
| | - Jyh‐Yang Wang
- Institute of PhysicsAcademia SinicaNangangTaipei11529Taiwan
| | - Teik‐Hui Lee
- Institute of PhysicsAcademia SinicaNangangTaipei11529Taiwan
| | - Chi‐Yuan Yang
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia SinicaNational Taiwan University and National Tsing Hua University, Institute of Physics, Academia SinicaNangangTaipei11529Taiwan
| | - Kung‐Hsuan Lin
- Institute of PhysicsAcademia SinicaNangangTaipei11529Taiwan
| | | | - Nadav Katz
- Racah Institute of PhysicsHebrew UniversityJerusalem91904Israel
| | - Sergey Kafanov
- Department of PhysicsLancaster UniversityLancaster LA1 4YBUnited Kingdom
| | - Yuri A. Pashkin
- Department of PhysicsLancaster UniversityLancaster LA1 4YBUnited Kingdom
| | - Chii‐Dong Chen
- Institute of PhysicsAcademia SinicaNangangTaipei11529Taiwan
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20
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Wei L, Kuai X, Bao Y, Wei J, Yang L, Song P, Zhang M, Yang F, Wang X. The Recent Progress of MEMS/NEMS Resonators. MICROMACHINES 2021; 12:724. [PMID: 34205469 PMCID: PMC8235191 DOI: 10.3390/mi12060724] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2021] [Revised: 06/13/2021] [Accepted: 06/14/2021] [Indexed: 01/22/2023]
Abstract
MEMS/NEMS resonators are widely studied in biological detection, physical sensing, and quantum coupling. This paper reviews the latest research progress of MEMS/NEMS resonators with different structures. The resonance performance, new test method, and manufacturing process of single or double-clamped resonators, and their applications in mass sensing, micromechanical thermal analysis, quantum detection, and oscillators are introduced in detail. The material properties, resonance mode, and application in different fields such as gyroscope of the hemispherical structure, microdisk structure, drum resonator are reviewed. Furthermore, the working principles and sensing methods of the surface acoustic wave and bulk acoustic wave resonators and their new applications such as humidity sensing and fast spin control are discussed. The structure and resonance performance of tuning forks are summarized. This article aims to classify resonators according to different structures and summarize the working principles, resonance performance, and applications.
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Affiliation(s)
- Lei Wei
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xuebao Kuai
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Yidi Bao
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiangtao Wei
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
| | - Liangliang Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peishuai Song
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingliang Zhang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fuhua Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China
| | - Xiaodong Wang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China
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21
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Verma A, Zhang W, van Duin ACT. ReaxFF reactive molecular dynamics simulations to study the interfacial dynamics between defective h-BN nanosheets and water nanodroplets. Phys Chem Chem Phys 2021; 23:10822-10834. [PMID: 33908500 DOI: 10.1039/d1cp00546d] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
In this work, the authors have developed a reactive force field (ReaxFF) to investigate the effect of water molecules on the interfacial interactions with vacancy defective hexagonal boron nitride (h-BN) nanosheets by introducing parameters suitable for the B/N/O/H chemistry. Initially, molecular dynamics simulations were performed to validate the structural stability and hydrophobic nature of h-BN nanosheets. The water molecule dissociation mechanism in the vicinity of vacancy defective h-BN nanosheets was investigated, and it was shown that the terminal nitrogen and boron atoms bond with a hydrogen atom and hydroxyl group, respectively. Furthermore, it is predicted that the water molecules arrange themselves in layers when compressed in between two h-BN nanosheets, and the h-BN nanosheet fracture nucleates from the vacancy defect site. Simulations at elevated temperatures were carried out to explore the water molecule trajectory near the functionalized h-BN pores, and it was observed that the intermolecular hydrogen bonds lead to agglomeration of water molecules near these pores when the temperature was lowered to room temperature. The study was extended to observe the effect of pore sizes and temperatures on the contact angle made by a water nanodroplet on h-BN nanosheets, and it was concluded that the contact angle would be less at higher temperatures and larger pore sizes. This study provides important information for the use of h-BN nanosheets in nanodevices for water desalination and underwater applications, as these h-BN nanosheets possess the desired adsorption capability and structural stability.
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Affiliation(s)
- Akarsh Verma
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA-16802, USA. and Department of Mechanical and Industrial Engineering, Indian Institute of Technology, Roorkee-247667, India and Department of Mechanical Engineering, University of Petroleum and Energy Studies, Dehradun-248007, India
| | - Weiwei Zhang
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA-16802, USA.
| | - Adri C T van Duin
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA-16802, USA.
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22
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Tan J, Wang Y, Guo Y. Humidity effect on peeling of monolayer graphene and hexagonal boron nitride. NANOTECHNOLOGY 2021; 32:025302. [PMID: 33047676 DOI: 10.1088/1361-6528/abba97] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ambient humidity introduces water adsorption and intercalation at the surfaces and interfaces of low-dimensional materials. Our extensive molecular dynamics (MD) simulations reveal the completely opposite contributions of interfacial water to the peeling of monolayer graphene and hexagonal boron nitride (h-BN) sheets from graphite and BN substrates. For graphene, interfacial water decreases the peeling force, due to lower adhesion at the graphene/water interface. The peeling force of h-BN increases with an increase in the thickness of interfacial water, owing to stronger adhesion at the h-BN/water interface and the detachment of the water layer from the substrates. In this work, a theoretical model considering graphene/water and water/substrate interfacial adhesion energies is established, to predict the peeling forces of graphene and h-BN, which coincides well with the peeling forces predicted by the MD simulations. Our results should provide a deeper insight into the effect of interfacial water, induced by ambient humidity, on mechanical exfoliation and the transfer of two-dimensional van der Waals crystals.
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Affiliation(s)
- Jie Tan
- State Key Laboratory of Mechanics and Control of Mechanical Structures and MOE Key Laboratory for Intelligent Nano Materials and Devices, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
| | - Yue Wang
- State Key Laboratory of Mechanics and Control of Mechanical Structures and MOE Key Laboratory for Intelligent Nano Materials and Devices, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
| | - Yufeng Guo
- State Key Laboratory of Mechanics and Control of Mechanical Structures and MOE Key Laboratory for Intelligent Nano Materials and Devices, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
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23
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Yildirim T, Zhang L, Neupane GP, Chen S, Zhang J, Yan H, Hasan MM, Yoshikawa G, Lu Y. Towards future physics and applications via two-dimensional material NEMS resonators. NANOSCALE 2020; 12:22366-22385. [PMID: 33150899 DOI: 10.1039/d0nr06773c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional materials (2Dm) offer a unique insight into the world of quantum mechanics including van der Waals (vdWs) interactions, exciton dynamics and various other nanoscale phenomena. 2Dm are a growing family consisting of graphene, hexagonal-Boron Nitride (h-BN), transition metal dichalcogenides (TMDs), monochalcogenides (MNs), black phosphorus (BP), MXenes and 2D organic crystals such as small molecules (e.g., pentacene, C8 BTBT, perylene derivatives, etc.) and polymers (e.g., COF and MOF, etc.). They exhibit unique mechanical, electrical, optical and optoelectronic properties that are highly enhanced as the surface to volume ratio increases, resulting from the transition of bulk to the few- to mono- layer limit. Such unique attributes include the manifestation of highly tuneable bandgap semiconductors, reduced dielectric screening, highly enhanced many body interactions, the ability to withstand high strains, ferromagnetism, piezoelectric and flexoelectric effects. Using 2Dm for mechanical resonators has become a promising field in nanoelectromechanical systems (NEMS) for applications involving sensors and condensed matter physics investigations. 2Dm NEMS resonators react with their environment, exhibit highly nonlinear behaviour from tension induced stiffening effects and couple different physics domains. The small size and high stiffness of these devices possess the potential of highly enhanced force sensitivities for measuring a wide variety of un-investigated physical forces. This review highlights current research in 2Dm NEMS resonators from fundamental physics and an applications standpoint, as well as presenting future possibilities using these devices.
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Affiliation(s)
- Tanju Yildirim
- Center for Functional Sensor & Actuator (CFSN), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
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24
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Gao A, Liu K, Liang J, Wu T. AlN MEMS filters with extremely high bandwidth widening capability. MICROSYSTEMS & NANOENGINEERING 2020; 6:74. [PMID: 34567684 PMCID: PMC8433195 DOI: 10.1038/s41378-020-00183-5] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2019] [Revised: 05/05/2020] [Accepted: 05/06/2020] [Indexed: 05/24/2023]
Abstract
This paper presents radio frequency (RF) microelectromechanical system (MEMS) filters with extremely high bandwidth widening capability. The proposed filtering topologies include hybrid configurations consisting of piezoelectric MEMS resonators and surface-mounted lumped elements. The MEMS resonators set the center frequency and provide electromechanical coupling to construct the filters, while the lumped-element-based matching networks help widen the bandwidth (BW) and enhance the out-of-band rejection. Aluminum nitride (AlN) S0 Lamb wave resonators are then applied to the proposed filtering topologies. AlN S0 first- and second-order wideband filters are studied and have shown prominent performance. Finally, the AlN S0 first-order wideband filter is experimentally implemented and characterized. The demonstrated first-order filter shows a large fractional bandwidth (FBW) of 5.6% (achieved with a resonator coupling of 0.94%) and a low insertion loss (IL) of 1.84 dB. The extracted bandwidth widening factor (BWF) is 6, which is approximately 12 times higher than those of the current ladder or lattice filtering topologies. This impressive bandwidth widening capability holds great potential for satisfying the stringent BW requirements of bands n77, n78, and n79 of 5G new radio (NR) and will overcome an outstanding technology hurdle in placing 5G NR into the marketplace.
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Affiliation(s)
- Anming Gao
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61820 USA
| | - Kangfu Liu
- School of Information Science and Technology (SIST), ShanghaiTech University, Shanghai, 201210 China
- University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Shijingshan District, Beijing, China
| | - Junrui Liang
- School of Information Science and Technology (SIST), ShanghaiTech University, Shanghai, 201210 China
- University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Shijingshan District, Beijing, China
| | - Tao Wu
- School of Information Science and Technology (SIST), ShanghaiTech University, Shanghai, 201210 China
- University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Shijingshan District, Beijing, China
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25
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Shandilya PK, Fröch JE, Mitchell M, Lake DP, Kim S, Toth M, Behera B, Healey C, Aharonovich I, Barclay PE. Hexagonal Boron Nitride Cavity Optomechanics. NANO LETTERS 2019; 19:1343-1350. [PMID: 30676758 DOI: 10.1021/acs.nanolett.8b04956] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Hexagonal boron nitride (hBN) is an emerging layered material that plays a key role in a variety of two-dimensional devices, and has potential applications in nanophotonics and nanomechanics. Here, we demonstrate the first cavity optomechanical system incorporating hBN. Nanomechanical resonators consisting of hBN beams with average dimensions of 12 μm × 1.2 μm × 28 nm and minimum predicted thickness of 8 nm were fabricated using electron beam induced etching and positioned in the optical near-field of silicon microdisk cavities. Of the multiple devices studied here a maximum 0.16 pm/[Formula: see text] sensitivity to the hBN nanobeam motion is demonstrated, allowing observation of thermally driven mechanical resonances with frequencies between 1 and 23 MHz, and largest mechanical quality factor of 1100 for a 23 MHz mode, at room temperature in high vacuum. In addition, the role of air damping is studied via pressure dependent measurements. Our results constitute an important step toward realizing integrated optomechanical circuits employing hBN.
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Affiliation(s)
- Prasoon K Shandilya
- Institute for Quantum Science and Technology , University of Calgary , Calgary , Alberta T2N 1N4 , Canada
| | - Johannes E Fröch
- Institute of Biomedical Materials and Devices , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Matthew Mitchell
- Institute for Quantum Science and Technology , University of Calgary , Calgary , Alberta T2N 1N4 , Canada
| | - David P Lake
- Institute for Quantum Science and Technology , University of Calgary , Calgary , Alberta T2N 1N4 , Canada
| | - Sejeong Kim
- Institute of Biomedical Materials and Devices , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Milos Toth
- Institute of Biomedical Materials and Devices , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Bishnupada Behera
- Institute for Quantum Science and Technology , University of Calgary , Calgary , Alberta T2N 1N4 , Canada
| | - Chris Healey
- Institute for Quantum Science and Technology , University of Calgary , Calgary , Alberta T2N 1N4 , Canada
| | - Igor Aharonovich
- Institute of Biomedical Materials and Devices , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Paul E Barclay
- Institute for Quantum Science and Technology , University of Calgary , Calgary , Alberta T2N 1N4 , Canada
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26
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Abdi M, Plenio MB. Quantum Effects in a Mechanically Modulated Single-Photon Emitter. PHYSICAL REVIEW LETTERS 2019; 122:023602. [PMID: 30720325 DOI: 10.1103/physrevlett.122.023602] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2018] [Indexed: 05/13/2023]
Abstract
Recent observation of quantum emitters in monolayers of hexagonal boron nitride (h-BN) has provided a novel platform for optomechanical experiments where the single-photon emitters can couple to the motion of a freely suspended h-BN membrane. Here, we propose a scheme where the electronic degree of freedom (d.o.f.) of an embedded color center is coupled to the motion of the hosting h-BN resonator via dispersive forces. We show that the coupling of membrane vibrations to the electronic d.o.f. of the emitter can reach the strong regime. By suitable driving of a three-level Λ-system composed of two spin d.o.f. in the electronic ground state as well as an isolated excited state of the emitter, a multiple electromagnetically induced transparency spectrum becomes available. The experimental feasibility of the efficient vibrational ground-state cooling of the membrane via quantum interference effects in the two-color drive scheme is numerically confirmed. More interestingly, the emission spectrum of the defect exhibits a frequency comb with frequency spacings as small as the fundamental vibrational mode, which finds applications in high-precision spectroscopy.
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Affiliation(s)
- Mehdi Abdi
- Department of Physics, Isfahan University of Technology, Isfahan 84156-83111, Iran
- Institute of Theoretical Physics and IQST, Albert-Einstein-Allee 11, Ulm University, 89069 Ulm, Germany
| | - Martin B Plenio
- Institute of Theoretical Physics and IQST, Albert-Einstein-Allee 11, Ulm University, 89069 Ulm, Germany
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27
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Zhang J, Zhou J. Piezoelectric effects on the resonance frequencies of boron nitride nanosheets. NANOTECHNOLOGY 2018; 29:395703. [PMID: 29978831 DOI: 10.1088/1361-6528/aad1b5] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
By using molecular dynamics (MD) simulations, we find in this work that due to the piezoelectric characteristic of boron nitride (BN) nanosheets their resonance frequencies can be efficiently tuned by applying an external electric field. This finding suggests that BN nanosheet can be treated as a good building block for designing novel piezoelectrically tunable two-dimensional nanoresonators. As BN nanosheets possess an inversely stacked structure, the applied electric field has different effects on the resonance frequency of BN nanosheets with odd and even layers. The influence of piezoelectric effect on the vibration behaviours observed in MD simulations is found to significantly deviate from the prediction of the conventional Euler-Bernoulli beam model (EBM), since the EBM cannot account for the weak van der Waals interaction between neighbouring layers in BN nanosheets. To take into account the interlayer interaction in the mathematical modelling of the piezoelectric effect on the vibration of BN nanosheets, we propose here a novel multiple beam model (MBM), which can account for both interlayer stretching and shearing deformations. The MBM result is found to be in a good agreement with the MD result without any additional parameters fitting, which indicates that the present MBM can be treated as a more precise theoretical model in the future study of the vibration properties of BN nanosheets.
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Affiliation(s)
- Jin Zhang
- Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China
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28
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Zheng XQ, Lee J, Rafique S, Han L, Zorman CA, Zhao H, Feng PXL. Ultrawide Band Gap β-Ga 2O 3 Nanomechanical Resonators with Spatially Visualized Multimode Motion. ACS APPLIED MATERIALS & INTERFACES 2017; 9:43090-43097. [PMID: 29115818 DOI: 10.1021/acsami.7b13930] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Beta gallium oxide (β-Ga2O3) is an emerging ultrawide band gap (4.5 eV-4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. β-Ga2O3 thin films made by various methods are being actively studied toward such devices. Here, we report on the experimental demonstration of single-crystal β-Ga2O3 nanomechanical resonators using β-Ga2O3 nanoflakes grown via low-pressure chemical vapor deposition (LPCVD). By investigating β-Ga2O3 circular drumhead structures, we demonstrate multimode nanoresonators up to the sixth mode in high and very high frequency (HF/VHF) bands, and also realize spatial mapping and visualization of the multimode motion. These measurements reveal a Young's modulus of EY = 261 GPa and anisotropic biaxial built-in tension of 37.5 MPa and 107.5 MPa. We find that thermal annealing can considerably improve the resonance characteristics, including ∼40% upshift in frequency and ∼90% enhancement in quality (Q) factor. This study lays a foundation for future exploration and development of mechanically coupled and tunable β-Ga2O3 electronic, optoelectronic, and physical sensing devices.
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Affiliation(s)
- Xu-Qian Zheng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Jaesung Lee
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Subrina Rafique
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Lu Han
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Christian A Zorman
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Hongping Zhao
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Philip X-L Feng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
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