Discovery of a new type of topological Weyl fermion semimetal state in MoxW1-xTe2

High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect

The quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science over recent decades. Recently, the discovery of a novel class of materials-the topological semimetals-has led to a growing interest in the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure, and carrier mobility in recently discovered high carrier mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. Their large magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The possibility of designing novel quantum sensors and devices based on solid-state semimetals is also examined.

Tunable optical topological transitions of plasmon polaritons in WTe2 van der Waals films

Naturally existing in-plane hyperbolic polaritons and the associated optical topological transitions, which avoid the nano-structuring to achieve hyperbolicity, can outperform their counterparts in artificial metasurfaces. Such plasmon polaritons are rare, but experimentally revealed recently in WTe2 van der Waals thin films. Different from phonon polaritons, hyperbolic plasmon polaritons originate from the interplay of free carrier Drude response and interband transitions, which promise good intrinsic tunability. However, tunable in-plane hyperbolic plasmon polariton and its optical topological transition of the isofrequency contours to the elliptic topology in a natural material have not been realized. Here we demonstrate the tuning of the optical topological transition through Mo doping and temperature. The optical topological transition energy is tuned over a wide range, with frequencies ranging from 429 cm-1 (23.3 microns) for pure WTe2 to 270 cm-1 (37.0 microns) at the 50% Mo-doping level at 10 K. Moreover, the temperature-induced blueshift of the optical topological transition energy is also revealed, enabling active and reversible tuning. Surprisingly, the localized surface plasmon resonance in skew ribbons shows unusual polarization dependence, accurately manifesting its topology, which renders a reliable means to track the topology with far-field techniques. Our results open an avenue for reconfigurable photonic devices capable of plasmon polariton steering, such as canaling, focusing, and routing, and pave the way for low-symmetry plasmonic nanophotonics based on anisotropic natural materials.

Superconductor Vortex Spectrum Including Fermi Arc States in Time-Reversal Symmetric Weyl Semimetals

Using semiclassics to surmount the hurdle of bulk-surface inseparability, we derive the superconductor vortex spectrum in nonmagnetic Weyl semimetals and show that it stems from the Berry phase of orbits made of Fermi arcs on opposite surfaces and bulk chiral modes. Tilting the vortex transmutes it between bosonic, fermionic, and supersymmetric, produces periodic peaks in the density of states that signify novel nonlocal Majorana modes, and yields a thickness-independent spectrum at magic "magic angles." We propose (Nb,Ta)P as candidate materials and tunneling spectroscopy as the ideal experiment.

Sizable spin-to-charge conversion in PLD-grown amorphous (Mo, W)Te2-xfilms

We report on the spin-to-charge conversion (SCC) in Mo_0.25W_0.75Te_2-x(MWT)/Y₃Fe₅O₁₂(YIG) heterostructures at room temperature. The centimeter-scale amorphous MWT films are deposited on liquid-phase-epitaxial YIG by pulsed laser deposition technique. The significant SCC voltage is measured in the MWT layer with a sizable spin Hall angle of ∼0.021 by spin pumping experiments. The control experiments by inserting MgO or Ag layer between MWT and YIG show that the SCC is mainly attributed to the inverse spin Hall effect rather than the thermal or interfacial Rashba effect. Our work provides a novel spin-source material for energy-efficient topological spintronic devices.

Direct Observation of the Topological Surface State in the Topological Superconductor 2M-WS2

The quantum spin Hall (QSH) effect has attracted extensive research interest because of the potential applications in spintronics and quantum computing, which is attributable to two conducting edge channels with opposite spin polarization and the quantized electronic conductance of 2e²/h. Recently, 2M-WS₂, a new stable phase of transition metal dichalcogenides with a 2M structure showing a layer configuration identical to that of the monolayer 1T' TMDs, was suggested to be a QSH insulator as well as a superconductor with a critical transition temperature of around 8 K. Here, high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES are applied to investigate the electronic and spin structure of the topological surface states (TSS) in the superconducting 2M-WS₂. The TSS exhibit characteristic spin-momentum-locking behavior, suggesting the existence of long-sought nontrivial Z2 topological states therein. We expect that 2M-WS₂ with coexisting superconductivity and TSS might host the promising Majorana bound states.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Non-linear Hall effect in multi-Weyl semimetals

In the presence of time reversal symmetry, a non-linear Hall effect can occur in systems without an inversion symmetry. One of the prominent candidates for detection of such Hall signals are Weyl semimetals. In this article, we investigate the Berry curvature induced second and third order Hall effect in multi-Weyl semimetals with topological chargesn=1,2,3. We use low energy effective models to obtain general analytical expressions and discover the presence of a large Berry curvature dipole (BCD) in multi-Weyl semimetals, compared to usual (n = 1) Weyl semimetals. We also study the BCD in a realistic tight-binding lattice model and observe two different kinds of variation with increasing topological charge-these can be attributed to different underlying Berry curvature components. We provide estimates of the signatures of second harmonic of Hall signal in multi-Weyl semimetals, which can be detected experimentally. Furthermore, we predict the existence of a third order Hall signal in multi-Weyl semimetals. We derive the analytical expressions of Berry connection polarizability tensor, which is responsible for third order effects, using a low energy model and estimate the measurable conductivity. Our work can help guide experimental discovery of Berry curvature multipole physics in multi-Weyl semimetals.

All topological bands of all nonmagnetic stoichiometric materials

Topological quantum chemistry and symmetry-based indicators have facilitated large-scale searches for materials with topological properties at the Fermi energy (E_F). We report the implementation of a publicly accessible catalog of stable and fragile topology in all of the bands both at and away from E_F in the 96,196 processable entries in the Inorganic Crystal Structure Database. Our calculations, which represent the completion of the symmetry-indicated band topology of known nonmagnetic materials, have enabled the discovery of repeat-topological and supertopological materials, including rhombohedral bismuth and Bi₂Mg₃. We find that 52.65% of all materials are topological at E_F, roughly two-thirds of bands across all materials exhibit symmetry-indicated stable topology, and 87.99% of all materials contain at least one stable or fragile topological band.

Controlled Synthesis of MoxW1-xTe2 Atomic Layers with Emergent Quantum States

Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe₂, WTe₂, and alloyed Mo_xW_1-xTe_2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the Mo_xW_1-xTe₂ with controllable thickness and chemical composition ratios. The atomic structure of a monolayer Mo_xW_1-xTe₂ alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo_0.8W_0.2Te₂ and W-rich Mo_0.2W_0.8Te₂ samples, respectively. Our results show that the electrical properties of Mo_xW_1-xTe₂ can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials.

Discovery and Facile Synthesis of a New Silicon Based Family as Efficient Hydrogen Evolution Reaction Catalysts: A Computational and Experimental Investigation of Metal Monosilicides

A new family of transition-metal monosilicides (MSi, M = Ti, Mn, Fe, Ru, Ni, Pd, Co, and Rh) electrocatalysts with superior electrocatalytic performance of hydrogen evolution is reported, based on the computational and experimental results. It is proposed that these MSi can be synthesized within several minutes by adopting the arc-melting method. The previously reported RuSi is not only fabricated more readily but eventually explored 8 MSi that can be good hydrogen evolution reaction catalysts. Silicides then can be another promising electrocatalysts family as carbides, wherein carbon has the same electronic configuration as silicon. All explored silicides electrodes exhibited low overpotentials (34-54 mV at 10 mA cm^-2 ) with Tafel slopes from 23.6 to 32.3 mV dec^-1 , which are comparable to that of the commercial 20 wt% Pt/C (37 mV, 26.1 mV dec^-1 ). First-principles calculations demonstrated that the superior performance can be attributed to the high catalytic reactivity per site that can even function at high hydrogen coverages (≈100%) on multiple low surface energy facets. The work sheds light on a new class of electrocatalysts for hydrogen evolution, with earth-abundant and inexpensive silicon-based compounds.

On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides

Layered materials held together by weak van der Waals (vdW) interactions are a promising class of materials in the field of nanotechnology. Besides the potential for single layers, stacking of various vdW layers becomes even more promising since unique properties can hence be precisely engineered. The synthesis of stacked vdW layers, however, remains to date, hardly understood. Therefore, in this work, the vdW epitaxy of transition metal dichalcogenides (TMDs) on single-crystalline TMD templates is investigated in depth. It is demonstrated that the role of lattice mismatch is insignificant. More importantly is the role of surface energy, calculated using density functional theory, which plays an essential role in the activation energy for adatom diffusion, hence nucleation density. This in turn correlates with defect density since the stacking sequence in vdW epitaxy is generally poorly controlled. Moreover, the vapor pressure of the transition metal is also found to correlate with adatom diffusion. Consequently, the proposed study enables important and new insight in the vdW epitaxy of multilayer 2D homo-/heterostructures.

Scanning tunneling spectroscopy studies of topological materials

Topological materials have become promising materials for next-generation devices by utilizing their exotic electronic states. Their exotic states caused by spin-orbital coupling usually locate on the surfaces or at the edges. Scanning tunneling spectroscopy (STS) is a powerful tool to reveal the local electronic structures of condensed matters. Therefore, STS provides us with an almost perfect method to access the exotic states of topological materials. In this topical review, we report the current investigations by several methods based on the STS technique for layered topological material from transition metal dichalcogenide Weyl semimetals (WTe₂ and MoTe₂) to two dimensional topological insulators (layered bismuth and silicene). The electronic characteristics of these layered topological materials are experimentally identified.

Phase-Controlled Synthesis of Monolayer W1- x Rex S2 Alloy with Improved Photoresponse Performance

Tuning bandgap and phases in the ternary 2D transition metal dichalcogenides (TMDs) alloys has opened up unexpected opportunities to engineer optoelectronic properties and explore potential applications. In this work, a salt-assisted chemical deposition vapor (CVD) growth strategy is reported for the creation of high-quality monolayer W_{1- x} Re_x S₂ alloys to fulfill a readily phase control from 1H to DT by changing the ratio of Re and W precursors. The structures and chemical compositions of doping alloys are confirmed by combining atomic resolution scanning transmission electron microscopy-annular dark field imaging with energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy, matching well with the calculated results. The field-effect transistors (FETs) devices fabricated based on 1H-W_0.9 Re_0.1 S₂ monolayer exhibit a n-type semiconducting behavior with the mobility of 0.4 cm² V^-1 s^-1 . More importantly, the FETs show high-performance responsivity with a value of 17 µA W^-1 in air, which is superior to that of monolayer CVD-grown WS₂ . This work paves the way toward synthesizing monolayer ternary alloys with controlled phases for potential optoelectronic applications.

Topological Semimetal Nanostructures: From Properties to Topotronics

Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with large surface-to-volume ratio and easy field-effect gating, provide ideal platforms to detect and manipulate the topological quantum states. Exotic physical properties originating from these topological states endow topological semimetals attractive for future topological electronics (topotronics). For example, the linear energy dispersion relation is promising for broadband infrared photodetectors, the spin-momentum locking nature of topological surface states is valuable for spintronics, and the topological superconductivity is highly desirable for fault-tolerant qubits. For real-life applications, topological semimetals in the form of nanostructures are necessary in terms of convenient fabrication and integration. Here, we review the recent progresses in topological semimetal nanostructures and start with the quantum transport properties. Then topological semimetal-based electronic devices are introduced. Finally, we discuss several important aspects that should receive great effort in the future, including controllable synthesis, manipulation of quantum states, topological field effect transistors, spintronic applications, and topological quantum computation.

NbSeTe-a new layered transition metal dichalcogenide superconductor

Transition metal dichalcogenides (TMDCs) usually exhibit layered polytypic structures due to the weak interlayer coupling. 2H-NbSe₂ is one of the most widely studied in the pristine TMDC family due to its high superconducting transition temperature (T _c  =  7.3 K) and the occurrence of a charge-density wave (CDW) order below 33 K. The coexistence of CDW with superconductivity poses an intriguing open question about the relationship between Fermi surface nesting and Cooper pairing. Past studies of this issue have mostly been focused on doping 2H-NbSe₂ by 3d transition metals without significantly changing its crystal structure. Here we replaced the Se by Te in 2H-NbSe₂ in order to design a new 1T polytype layered TMDC NbSeTe, which adopts a trigonal structure with space group P [Formula: see text] m1. We successfully grew large size and high-quality single crystals of 1T-NbSeTe via the vapor transport method using I ₂ as the transport agent. Temperature-dependent resistivity and specific heat data revealed a bulk T _c at 1.3 K, which is the first observation of superconductivity in pure 1T-NbSeTe phase. This compound enlarged the family of superconducting TMDCs and provides an opportunity to study the interplay between CDW and superconductivity in the trigonal structure.

Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces

The increasing scientific and industry interest in 2D MX₂ materials within the field of nanotechnology has made the single crystalline integration of large area van der Waals (vdW) layers on commercial substrates an important topic. The c-plane oriented (3D crystal) sapphire surface is believed to be an interesting substrate candidate for this challenging 2D/3D integration. Despite the many attempts that have been made, the yet incomplete understanding of vdW epitaxy still results in synthetic material that shows a crystallinity far too low compared to natural crystals that can be exfoliated onto commercial substrates. Thanks to its atomic control and in situ analysis possibilities, molecular beam epitaxy (MBE) offers a potential solution and an appropriate method to enable a more in-depth understanding of this peculiar 2D/3D hetero-epitaxy. Here, we report on how various sapphire surface reconstructions, that are obtained by thermal annealing of the as-received substrates, influence the vdW epitaxy of the MBE-grown WSe₂ monolayers (MLs). The surface chemistry and the interatomic arrangement of the reconstructed sapphire surfaces are shown to control the preferential in-plane epitaxial alignment of the stoichiometric WSe₂ crystals. In addition, it is demonstrated that the reconstructions also affect the in-plane lattice parameter and thus the in-plane strain of the 2D vdW-bonded MLs. Hence, the results obtained in this work shine more light on the peculiar concept of vdW epitaxy, especially relevant for 2D materials integration on large-scale 3D crystal commercial substrates.

Linear Response in Topological Materials

The discovery of topological insulators and semimetals has opened up a new perspective to understand materials. Owing to the special band structure and enlarged Berry curvature, the linear responses are strongly enhanced in topological materials. The interplay of topological band structure and symmetries plays a crucial role for designing new materials with strong and exotic new electromagnetic responses and provides promising mechanisms and new materials for the next generation of technological applications. We review the fundamental concept of linear responses in topological materials from the symmetry point of view and discuss their potential applications.

Unconventional scaling of the superfluid density with the critical temperature in transition metal dichalcogenides

We report on muon spin rotation experiments probing the magnetic penetration depth λ(T) in the layered superconductors in 2H-NbSe₂ and 4H-NbSe₂. The current results, along with our earlier findings on 1T'-MoTe₂ (Guguchia et al.), demonstrate that the superfluid density scales linearly with T _c in the three transition metal dichalcogenide superconductors. Upon increasing pressure, we observe a substantial increase of the superfluid density in 2H-NbSe₂, which we find to correlate with T _c. The correlation deviates from the abovementioned linear trend. A similar deviation from the Uemura line was also observed in previous pressure studies of optimally doped cuprates. This correlation between the superfluid density and T _c is considered a hallmark feature of unconventional superconductivity. Here, we show that this correlation is an intrinsic property of the superconductivity in transition metal dichalcogenides, whereas the ratio T _c/T _F is approximately a factor of 20 lower than the ratio observed in hole-doped cuprates. We, furthermore, find that the values of the superconducting gaps are insensitive to the suppression of the charge density wave state.

Recent Progress in CVD Growth of 2D Transition Metal Dichalcogenides and Related Heterostructures

In recent years, 2D layered materials have received considerable research interest on account of their substantial material systems and unique physicochemical properties. Among them, 2D layered transition metal dichalcogenides (TMDs), a star family member, have already been explored over the last few years and have exhibited excellent performance in electronics, catalysis, and other related fields. However, to fulfill the requirement for practical application, the batch production of 2D TMDs is essential. Recently, the chemical vapor deposition (CVD) technique was considered as an elegant alternative for successfully growing 2D TMDs and their heterostructures. The latest research advances in the controllable synthesis of 2D TMDs and related heterostructures/superlattices via the CVD approach are illustrated here. The controlled growth behavior, preparation strategies, and breakthroughs on the synthesis of new 2D TMDs and their heterostructures, as well as their unique physical phenomena, are also discussed. Recent progress on the application of CVD-grown 2D materials is revealed with particular attention to electronics/optoelectronic devices and catalysts. Finally, the challenges and future prospects are considered regarding the current development of 2D TMDs and related heterostructures.

Spatially dispersive circular photogalvanic effect in a Weyl semimetal

Weyl semimetals (WSMs) are gapless topological states of matter with broken inversion and/or time reversal symmetry. WSMs can support a circulating photocurrent when illuminated by circularly polarized light at normal incidence. Here, we report a spatially dispersive circular photogalvanic effect (s-CPGE) in a WSM that occurs with a spatially varying beam profile. Our analysis shows that the s-CPGE is controlled by a symmetry selection rule combined with asymmetric carrier excitation and relaxation dynamics. By evaluating the s-CPGE for a minimal model of a WSM, a frequency-dependent scaling behaviour of the photocurrent is obtained. Wavelength-dependent measurements from the visible to mid-infrared range show evidence of Berry curvature singularities and band inversion in the s-CPGE response. We present the s-CPGE as a promising spectroscopic probe for topological band properties, with the potential for controlling photoresponse by patterning optical fields on topological materials to store, manipulate and transmit information.

Dimensional Crossover and Topological Phase Transition in Dirac Semimetal Na3Bi Films

Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator phase. However, the 3D-to-2D crossover and the associated topological phase transition, which is valuable for understanding the topological quantum phases, remain unexplored. Here, we synthesize high-quality Na₃Bi thin films with √3 × √3 reconstruction on graphene and systematically characterize their thickness-dependent electronic and topological properties by scanning tunneling microscopy/spectroscopy in combination with first-principles calculations. We demonstrate that Dirac gaps emerge in Na₃Bi films, providing spectroscopic evidence of dimensional crossover from a 3D semimetal to a 2D topological insulator. Importantly, the Dirac gaps are revealed to be of sizable magnitudes on three and four monolayers (72 and 65 meV, respectively) with topologically nontrivial edge states. Moreover, the Fermi energy of a Na₃Bi film can be tuned via a certain growth process, thus offering a viable way for achieving charge neutrality in transport. The feasibility of controlling Dirac gap opening and charge neutrality enables realizing intrinsic high-temperature QSH effect in Na₃Bi films and achieving potential applications in topological devices.

Discovery of Superconductivity in 2M WS2 with Possible Topological Surface States

Recently the metastable 1T'-type VIB-group transition metal dichalcogenides (TMDs) have attracted extensive attention due to their rich and intriguing physical properties, including superconductivity, valleytronics physics, and topological physics. Here, a new layered WS₂ dubbed "2M" WS₂ , is constructed from 1T' WS₂ monolayers, is synthesized. Its phase is defined as 2M based on the number of layers in each unit cell and the subordinate crystallographic system. Intrinsic superconductivity is observed in 2M WS₂ with a transition temperature T_c of 8.8 K, which is the highest among TMDs not subject to any fine-tuning process. Furthermore, the electronic structure of 2M WS₂ is found by Shubnikov-de Haas oscillations and first-principles calculations to have a strong anisotropy. In addition, topological surface states with a single Dirac cone, protected by topological invariant Z₂ , are predicted through first-principles calculations. These findings reveal that the new 2M WS₂ might be an interesting topological superconductor candidate from the VIB-group transition metal dichalcogenides.

Observation of Weyl Nodes in Robust Type-II Weyl Semimetal WP_{2}

Distinct to type-I Weyl semimetals (WSMs) that host quasiparticles described by the Weyl equation, the energy dispersion of quasiparticles in type-II WSMs violates Lorentz invariance and the Weyl cones in the momentum space are tilted. Since it was proposed that type-II Weyl fermions could emerge from (W,Mo)Te_{2} and (W,Mo)P_{2} families of materials, a large number of experiments have been dedicated to unveiling the possible manifestation of type-II WSMs, e.g., surface-state Fermi arcs. However, the interpretations of the experimental results are very controversial. Here, using angle-resolved photoemission spectroscopy supported by the first-principles calculations, we probe the tilted Weyl cone bands in the bulk electronic structure of WP_{2} directly, which are at the origin of Fermi arcs at the surfaces and transport properties related to the chiral anomaly in type-II WSMs. Our results ascertain that, due to the spin-orbit coupling, the Weyl nodes originate from the splitting of fourfold degenerate band-crossing points with Chern numbers C=±2 induced by the crystal symmetries of WP_{2}, which is unique among all the discovered WSMs. Our finding also provides a guiding line to observe the chiral anomaly that could manifest in novel transport properties.

Engineering 2D Architectures toward High-Performance Micro-Supercapacitors

The rise of micro-supercapacitors is satisfying the demand for power storage in portable devices and wireless gadgets. But the miniaturization of the energy-storage components is significantly limited by their energy density. Electrode materials with adequate electrochemical active surfaces are therefore required for improving performance. 2D materials with ultralarge specific surface areas offer a broad portfolio of the development of high-performance micro-supercapacitors in spite of their several critical drawbacks. An architecture engineering strategy is therefore developed to break these natural limits and maximize the significant advantages of these materials. Based on the approaches of phase transformation, intercalation, surface modification, material hybridization, and hierarchical structuration, 2D architectures with improved conductivity, enlarged specific surface, enhanced redox activity, as well as the unique synergetic effect exhibit great promise in the application of miniaturized supercapacitors with highly enhanced performance. Herein, the architecture engineering of emerging 2D materials beyond graphene toward optimizing the performance of micro-supercapacitors is discussed, in order to promote the application of 2D architectures in miniaturized energy-storage devices.

Vanishing Density of States in Weakly Disordered Weyl Semimetals

The Brillouin zone of the clean Weyl semimetal contains points at which the density of states (DOS) vanishes. Previous work suggested that below a certain critical concentration of impurities this feature is preserved including in the presence of disorder. This result got criticized for its neglect of rare disorder fluctuations which might bind quantum states and hence generate a finite DOS. We here show that in spite of their existence these states are so fragile that their contribution effectively vanishes when averaged over continuous disorder distributions. This means that the integrity of the nodal points remains protected for weak disorder.

Spin-Resolved Electronic Response to the Phase Transition in MoTe_{2}

The semimetal MoTe_{2} is studied by spin- and angle-resolved photoemission spectroscopy across the centrosymmetry-breaking structural transition temperature of the bulk. A three-dimensional spin-texture is observed in the bulk Fermi surface in the low temperature, noncentrosymmetric phase that is consistent with first-principles calculations. The spin texture and two types of surface Fermi arc are not completely suppressed above the bulk transition temperature. The lifetimes of quasiparticles forming the Fermi arcs depend on thermal history and lengthen considerably upon cooling toward the bulk structural transition. The results indicate that a new form of polar instability exists near the surface when the bulk is largely in a centrosymmetric phase.

The induced by an electromagnetic field coexistence of types I and II spectra in Weyl semimetals

Due to their unique properties, Weyl semimetals (WSMs) are promising materials for the future electronics. Currently, the two types (I and II) of WSMs are discovered experimentally. These types of WSMs differ from each other in their topological properties. In this paper we showed that a coexistence of types I and II Weyls spectra is possible in some WSMs under crossed magnetic and electric fields. This is possible in systems with non-equivalent Weyl points (WPs). In particular, it is possible in strained WSMs. Such phase, controlled by electromagnetic field, is principally new for topological matter physics. It is obvious, that in this regime new features of electron transport will appear. We showed that this effect can also be considered as a mechanism of strain induced type-I-type-II transition.

Band Structure Perfection and Superconductivity in Type-II Dirac Semimetal Ir1-x Ptx Te2

The discovery of a new type-II Dirac semimetal in Ir_1-x Pt_x Te₂ with optimized band structure is described. Pt dopants protect the crystal structure holding the Dirac cones and tune the Fermi level close to the Dirac point. The type-II Dirac dispersion in Ir_1-x Pt_x Te₂ is confirmed by angle-resolved photoemission spectroscopy and first-principles calculations. Superconductivity is also observed and persists when the Fermi level aligns with the Dirac points. Ir_1-x Pt_x Te₂ is an ideal platform for further studies on the exotic properties and potential applications of type-II DSMs, and opens up a new route for the investigation of the possible topological superconductivity and Majorana physics.

Tunable double-Weyl Fermion semimetal state in the SrSi2 materials class

We discuss first-principles topological electronic structure of noncentrosymmetric SrSi2 materials class based on the hybrid exchange-correlation functional. Topological phase diagram of SrSi2 is mapped out as a function of the lattice constant with focus on the semimetal order. A tunable double-Weyl Fermion state in Sr1-xCaxSi2 and Sr1-xBaxSi2 alloys is identified. Ca doping in SrSi2 is shown to yield a double-Weyl semimetal with a large Fermi arc length, while Ba doping leads to a transition from the topological semimetal to a gapped insulator state. Our study indicates that SrSi2 materials family could provide an interesting platform for accessing the unique topological properties of Weyl semimetals.

van der Waals Metallic Transition Metal Dichalcogenides

Transition metal dichalcogenides are layered materials which are composed of transition metals and chalcogens of the group VIA in a 1:2 ratio. These layered materials have been extensively investigated over synthesis and optical and electrical properties for several decades. It can be insulators, semiconductors, or metals revealing all types of condensed matter properties from a magnetic lattice distorted to superconducting characteristics. Some of these also feature the topological manner. Instead of covering the semiconducting properties of transition metal dichalcogenides, which have been extensively revisited and reviewed elsewhere, here we present the structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods (e.g., chemical vapor transport, chemical vapor deposition) but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains. Some representative band structures of metallic transition metal dichalcogenides and their strong layer-dependence are reviewed and updated, both in theoretical calculations and experiments. In addition, we discuss the physical properties of metallic transition metal dichalcogenides such as periodic lattice distortion, magnetoresistance, superconductivity, topological insulator, and Weyl semimetal. Approaches to overcome current challenges related to these materials are also proposed.

Raman Signatures of Broken Inversion Symmetry and In-Plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4

The layered ternary compound TaIrTe₄ is an important candidate to host the recently predicted type-II Weyl fermions. However, a direct and definitive proof of the absence of inversion symmetry in this material, a prerequisite for the existence of Weyl Fermions, has so far remained evasive. Herein, an unambiguous identification of the broken inversion symmetry in TaIrTe₄ is established using angle-resolved polarized Raman spectroscopy. Combining with high-resolution transmission electron microscopy, an efficient and nondestructive recipe to determine the exact crystallographic orientation of TaIrTe₄ crystals is demonstrated. Such technique could be extended to the fast identification and characterization of other type-II Weyl fermions candidates. A surprisingly strong in-plane electrical anisotropy in TaIrTe₄ thin flakes is also revealed, up to 200% at 10 K, which is the strongest known electrical anisotropy for materials with comparable carrier density, notably in such good metals as copper and silver.

Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films

The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically protected spin-polarized states and can carry a very large current density. In addition, the intrinsic non-centrosymmetry of WTe2 and MoTe2 endows with a unique property of crystal symmetry-controlled spin-orbit torques. An important question to be answered for developing spintronic devices is how spins relax in WTe2 and MoTe2. Here, a room-temperature spin relaxation time of 1.2 ns (0.4 ns) in WTe2 (MoTe2) thin film using the time-resolved Kerr rotation (TRKR) is reported. Based on ab initio calculation, a mechanism of long-lived spin polarization resulting from a large spin splitting around the bottom of the conduction band, low electron-hole recombination rate, and suppression of backscattering required by time-reversal and lattice symmetry operation is identified. In addition, it is found that the spin polarization is firmly pinned along the strong internal out-of-plane magnetic field induced by large spin splitting. This work provides an insight into the physical origin of long-lived spin polarization in Weyl semimetals, which could be useful to manipulate spins for a long time at room temperature.

Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping

We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.

Alloy Engineering of Topological Semimetal Phase Transition in MgTa_{2-x}Nb_{x}N_{3}

Dirac, triple-point, and Weyl fermions represent three topological semimetal phases, characterized with a descending degree of band degeneracy, which have been realized separately in specific crystalline materials with different lattice symmetries. Here we demonstrate an alloy engineering approach to realize all three types of fermions in one single material system of MgTa_{2-x}Nb_{x}N_{3}. Based on symmetry analysis and first-principles calculations, we map out a phase diagram of topological order in the parameter space of alloy concentration and crystalline symmetry, where the intrinsic MgTa_{2}N_{3} with the highest symmetry hosts the Dirac semimetal phase, which transforms into the triple-point and then the Weyl semimetal phases with increasing Nb concentration that lowers the crystalline symmetries. Therefore, alloy engineering affords a unique approach for the experimental investigation of topological transitions of semimetallic phases manifesting different fermionic behaviors.

Electronic transport property in Weyl semimetal with local Weyl cone tilt

In realistic materials of Weyl semimetal (WSM), the Weyl cone tilt (WCT) is allowed due to the absence of Lorentz invariance in condensed matter physics. In this context, we theoretically study the electronic transport property in WSM with the local WCT as the scattering mechanism. In so doing, we establish an electronic transport structure of WSM with the WCT occurring only in the central region sandwiched between two pieces of semi-infinite WSM without the WCT. By means of two complementary theoretical approaches, i.e. the continuum-model method and the lattice-model method, the electronic transmission probability, the conductivity and the Fano factor as functions of the incident electron energy are calculated respectively. We find that the WCT can give rise to nontrivial intervalley scattering, as a result, the Klein tunneling is notably suppressed. More importantly, the minimal conductivity of a WSM shifts in energy from the Weyl nodal point. The Fano factor of the shot noise deviates obviously from the sub-Poissonian value in a two dimensional WSM with the WCT.

Synthesis of Large-Size 1T' ReS2x Se2(1-x) Alloy Monolayer with Tunable Bandgap and Carrier Type

Chemical vapor deposition growth of 1T' ReS_2x Se_2(1-x) alloy monolayers is reported for the first time. The composition and the corresponding bandgap of the alloy can be continuously tuned from ReSe₂ (1.32 eV) to ReS₂ (1.62 eV) by precisely controlling the growth conditions. Atomic-resolution scanning transmission electron microscopy reveals an interesting local atomic distribution in ReS_2x Se_2(1-x) alloy, where S and Se atoms are selectively occupied at different X sites in each Re-X₆ octahedral unit cell with perfect matching between their atomic radius and space size of each X site. This structure is much attractive as it can induce the generation of highly desired localized electronic states in the 2D surface. The carrier type, threshold voltage, and carrier mobility of the alloy-based field effect transistors can be systematically modulated by tuning the alloy composition. Especially, for the first time the fully tunable conductivity of ReS_2x Se_2(1-x) alloys from n-type to bipolar and p-type is realized. Owing to the 1T' structure of ReS_2x Se_2(1-x) alloys, they exhibit strong anisotropic optical, electrical, and photoelectric properties. The controllable growth of monolayer ReS_2x Se_2(1-x) alloy with tunable bandgaps and electrical properties as well as superior anisotropic feature provides the feasibility for designing multifunctional 2D optoelectronic devices.

Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference

Weyl semimetals (WSMs) are classified into two types, type I and II, according to the topology of the Weyl point, where the electron and hole pockets touch each other. Tungsten ditelluride (WTe₂) has garnered a great deal of attention as a strong candidate to be a type-II WSM. However, the Weyl points for WTe₂ are located above the Fermi level, which has prevented us from identifying the locations and the connection to the Fermi arc surface states by using angle-resolved photoemission spectroscopy. Here, we present experimental proof that WTe₂ is a type-II WSM. We measured energy-dependent quasiparticle interference patterns with a cryogenic scanning tunneling microscope, revealing the position of the Weyl point and its connection with the Fermi arc surface states, in agreement with prior theoretical predictions. Our results provide an answer to this crucial question and stimulate further exploration of the characteristics of WSMs.

Superconductivity at the Polar-Nonpolar Phase Boundary of SnP with an Unusual Valence State

Structural, magnetic, and electrical characterizations reveal that SnP with an unusual valence state (nominally Sn^{3+}) undergoes a ferroelectriclike structural transition from a simple NaCl-type structure to a polar tetragonal structure at approximately 250 K at ambient pressure. First-principles calculations indicate that the experimentally observed tetragonal distortion enhances the charge transfer from Sn to P, thereby making the polar tetragonal phase energetically more stable than the nonpolar cubic phase. Hydrostatic pressure is found to promptly suppress the structural phase transition in SnP, leading to the emergence of bulk superconductivity in a phase-competitive manner. These findings suggest that control of ferroelectriclike instability in a metal can be a promising way for creating novel superconductors.

Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Ga+ ion implantation

Here we introduce lattice defects in WTe₂ by Ga+ implantation (GI), and study the effects of defects on the transport properties and electronic structures of the samples. Theoretical calculation shows that Te Frenkel defects is the dominant defect type, and Raman characterization results agree with this. Electrical transport measurements show that, after GI, significant changes are observed in magnetoresistance and Hall resistance. The classical two-band model analysis shows that both electron and hole concentration are significantly reduced. According to the calculated results, ion implantation leads to significant changes in the band structure and the Fermi surface of the WTe₂. Our results indicate that defect engineering is an effective route of controlling the electronic properties of WTe₂ devices.

Controllable Synthesis of Atomically Thin Type-II Weyl Semimetal WTe2 Nanosheets: An Advanced Electrode Material for All-Solid-State Flexible Supercapacitors

Compared with 2D S-based and Se-based transition metal dichalcogenides (TMDs), Te-based TMDs display much better electrical conductivities, which will be beneficial to enhance the capacitances in supercapacitors. However, to date, the reports about the applications of Te-based TMDs in supercapacitors are quite rare. Herein, the first supercapacitor example of the Te-based TMD is reported: the type-II Weyl semimetal 1Td WTe₂ . It is demonstrated that single crystals of 1Td WTe₂ can be exfoliated into the nanosheets with 2-7 layers by liquid-phase exfoliation, which are assembled into air-stable films and further all-solid-state flexible supercapacitors. The resulting supercapacitors deliver a mass capacitance of 221 F g^-1 and a stack capacitance of 74 F cm^-3 . Furthermore, they also show excellent volumetric energy and power densities of 0.01 Wh cm^-3 and 83.6 W cm^-3 , respectively, superior to the commercial 4V/500 µAh Li thin-film battery and the commercial 3V/300 µAh Al electrolytic capacitor, in association with outstanding mechanical flexibility and superior cycling stability (capacitance retention of ≈91% after 5500 cycles). These results indicate that the 1Td WTe₂ nanosheet is a promising flexible electrode material for high-performance energy storage devices.

Type-II Symmetry-Protected Topological Dirac Semimetals

The recent proposal of the type-II Weyl semimetal state has attracted significant interest. In this Letter, we propose the concept of the three-dimensional type-II Dirac fermion and theoretically identify this new symmetry-protected topological state in the large family of transition-metal icosagenides, MA_{3} (M=V, Nb, Ta; A=Al, Ga, In). We show that the VAl_{3} family features a pair of strongly Lorentz-violating type-II Dirac nodes and that each Dirac node can be split into four type-II Weyl nodes with chiral charge ±1 via symmetry breaking. Furthermore, we predict that the Landau level spectrum arising from the type-II Dirac fermions in VAl_{3} is distinct from that of known Dirac or Weyl semimetals. We also demonstrate a topological phase transition from a type-II Dirac semimetal to a quadratic Weyl semimetal or a topological crystalline insulator via crystalline distortions.

Composition and temperature-dependent phase transition in miscible Mo1-xWxTe2 single crystals

Transition metal dichalcogenides (TMDs) WTe2 and MoTe2 with orthorhombic Td phase, being potential candidates as type-II Weyl semimetals, are attracted much attention recently. Here we synthesized a series of miscible Mo1-xWxTe2 single crystals by bromine vapor transport method. Composition-dependent X-ray diffraction and Raman spectroscopy, as well as composition and temperature-dependent resistivity prove that the tunable crystal structure (from hexagonal (2H), monoclinic (β) to orthorhombic (Td) phase) can be realized by increasing W content in Mo1-xWxTe2. Simultaneously the electrical property gradually evolves from semiconductor to semimetal behavior. Temperature-dependent Raman spectroscopy proves that temperature also can induce the structural phase transition from β to Td phase in Mo1-xWxTe2 crystals. Based on aforementioned characterizations, we map out the temperature and composition dependent phase diagram of Mo1-xWxTe2 system. In addition, a series of electrical parameters, such as carrier type, carrier concentration and mobility, have also been presented. This work offers a scheme to accurately control structural phase in Mo1-xWxTe2 system, which can be used to explore type-II Weyl semimetal, as well as temperature/composition controlled topological phase transition therein.

Chiral magnetoresistance in the Weyl semimetal NbP

NbP is a recently realized Weyl semimetal (WSM), hosting Weyl points through which conduction and valence bands cross linearly in the bulk and exotic Fermi arcs appear. The most intriguing transport phenomenon of a WSM is the chiral anomaly-induced negative magnetoresistance (NMR) in parallel electric and magnetic fields. In intrinsic NbP the Weyl points lie far from the Fermi energy, making chiral magneto-transport elusive. Here, we use Ga-doping to relocate the Fermi energy in NbP sufficiently close to the W2 Weyl points, for which the different Fermi surfaces are verified by resultant quantum oscillations. Consequently, we observe a NMR for parallel electric and magnetic fields, which is considered as a signature of the chiral anomaly in condensed-matter physics. The NMR survives up to room temperature, making NbP a versatile material platform for the development of Weyltronic applications.