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Yan X, Almajidi YQ, Uinarni H, Bokov DO, Mansouri S, Fenjan MN, Saxena A, Zabibah RS, Hamzah HF, Oudah SK. Bio(sensors) based on molecularly imprinted polymers and silica materials used for food safety and biomedical analysis: Recent trends and future prospects. Talanta 2024; 276:126292. [PMID: 38795646 DOI: 10.1016/j.talanta.2024.126292] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 05/06/2024] [Accepted: 05/19/2024] [Indexed: 05/28/2024]
Abstract
In recent decades, analytical techniques have increasingly focused on the precise quantification. Achieving this goal has been accomplished with conventional analytical approaches that typically require extensive pretreatment methods, significant reagent usage, and expensive instruments. The need for rapid, simple, and highly selective identification platforms has become increasingly pronounced. Molecularly imprinted polymer (MIP) has emerged as a promising avenue for developing advanced sensors that can potentially surpass the limitations of conventional detection methods. In recent years, the application of MIP-silica materials-based sensors has garnered significant attention owing to their distinctive characteristics. These types of probes hold a distinct advantage in their remarkable stability and durability, all of which provide a suitable sensing platform in severe environments. Moreover, the substrate composed of silica materials offers a vast surface area for binding, thereby facilitating the efficient detection of even minuscule concentrations of targets. As a result, sensors based on MIP-silica materials have the potential to be widely applied in various industries, including medical diagnosis, and food safety. In the present review, we have conducted an in-depth analysis of the latest research developments in the field of MIPs-silica materials based sensors, with a focus on succinctly summarizing and elucidating the most crucial findings. This is the first comprehensive review of integration MIPs with silica materials in electrochemical (EC) and optical probes for biomedical analysis and food safety.
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Affiliation(s)
- Xu Yan
- Department of Chemistry, University of Nottingham, Nottingham, United Kingdom
| | - Yasir Qasim Almajidi
- Baghdad College of Medical Sciences-Department of Pharmacy (Pharmaceutics), Baghdad, Iraq
| | - Herlina Uinarni
- Department of Anatomy, School of Medicine and Health Sciences Atma Jaya Catholic University of Indonesia, Indonesia; Department of Radiology, Pantai Indah Kapuk Hospital Jakarta, Indonesia.
| | - Dmitry Olegovich Bokov
- Institute of Pharmacy, Sechenov First Moscow State Medical University, 8 Trubetskaya St., bldg. 2, Moscow, 119991, Russian Federation; Laboratory of Food Chemistry, Federal Research Center of Nutrition, Biotechnology and Food Safety, 2/14 Ustyinsky pr., Moscow, 109240, Russian Federation
| | - Sofiene Mansouri
- Department of Biomedical Technology, College of Applied Medical Sciences in Al-Kharj, Prince Sattam bin Abdulaziz University, Al-Kharj, 11942, Saudi Arabia; University of Tunis El Manar, Higher Institute of Medical Technologies of Tunis, Laboratory of Biophysics and Medical Technologies, Tunis, Tunisia
| | - Mohammed N Fenjan
- College of Health and Medical Technology, Al-Ayen University, Thi-Qar, Iraq
| | - Archana Saxena
- Department of Management, Uttaranchal Institute of Management, Uttaranchal University, Dehradun, 248007, India
| | - Rahman S Zabibah
- College of Technical Engineering, The Islamic University, Najaf, Iraq; College of Technical Engineering, The Islamic University of Al Diwaniyah, Iraq; College of Technical Engineering, The Islamic University of Babylon, Iraq
| | - Hamza Fadhel Hamzah
- Department of Medical Laboratories Technology, AL-Nisour University College, Baghdad, Iraq
| | - Shamam Kareem Oudah
- College of Pharmacy, National University of Science and Technology, Dhi Qar, Iraq
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2
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Wang S, Liu X, Zhang Y, Li S, Bo X, Wei L, Niu W, Wu H, Pu Y, Li F. Modifying electronic and optical properties of violet phosphorus through variable fluorine coverage. J Comput Chem 2024. [PMID: 38622788 DOI: 10.1002/jcc.27369] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Revised: 03/25/2024] [Accepted: 04/06/2024] [Indexed: 04/17/2024]
Abstract
We present a comprehensive investigation of the electronic properties of fluorinated monolayer violet phosphorus using first-principles calculations. Our results reveal a strong dependence of the electronic properties on the different fluorine coverages of fluorination. As the fluorine coverage increases, monolayer violet phosphorus undergoes a significant transition from a wide direct bandgap semiconductor to a narrow indirect bandgap semiconductor. Moreover, both semi-fluorinated and fully fluorinated monolayer violet phosphorus exhibit advantageous semiconducting characteristics, with a tunable bandgap of 0.50 ~ 1.04 eV under biaxial strain ranging from -6% to 6%. Notably, the fully fluorinated monolayer violet phosphorus demonstrates a higher coefficient of light absorption within the visible range. Therefore, our findings highlight the tunability of monolayer violet phosphorus properties through the absorption of various fluorine coverages, providing valuable insights for the design and development of novel semiconductor devices based on this material.
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Affiliation(s)
- Suen Wang
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China
| | - Xiaoyu Liu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China
| | - Yang Zhang
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China
| | - Shasha Li
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China
| | - Xiangyan Bo
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China
| | - Lujun Wei
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China
| | - Wei Niu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China
| | - Hong Wu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China
| | - Yong Pu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China
| | - Feng Li
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China
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3
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Lee SE, Choi Y, Oh Y, Lee D, Kim J, Hong S. Black Phosphorus-Based Reusable Biosensor Platforms for the Ultrasensitive Detection of Cortisol in Saliva. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11305-11314. [PMID: 38406866 DOI: 10.1021/acsami.3c18605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/27/2024]
Abstract
A black phosphorus (BP)-based reusable biosensor platform is developed for the repeated and real-time detection of cortisol using antibody-conjugated magnetic particle (MP) structures as a refreshable receptor. Here, we took advantage of the low-noise characteristics of a mechanically exfoliated BP-based field-effect transistor (FET) and hybridized it with anti-cortisol antibody-functionalized MPs to build a highly sensitive cortisol sensor. This strategy allowed us to detect cortisol down to 1 aM in real time and discriminate cortisol from other hormones. In this case, we could easily remove MPs with used antibodies from the surface of a BP-FET and reuse the chip for up to eight repeated sensing operations. Moreover, since our platform could be fabricated using conventional photolithography techniques and the sensor can be reused multiple times, one should be able to significantly reduce operation costs for practical applications. Furthermore, this method could be utilized to detect different hormones with high sensitivity and selectivity in complex environments such as artificial saliva solutions. In this respect, our reusable BP-FET biosensing platform can be a powerful tool for versatile applications such as clinical diagnosis and basic biological analysis by conjugating various antibodies.
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Affiliation(s)
- Sang-Eun Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Yoonji Choi
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Yuhyeon Oh
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Dongryul Lee
- Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Jihyun Kim
- Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Seunghun Hong
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
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4
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Lei D, Zhang Z, Jiang L. Bioinspired 2D nanofluidic membranes for energy applications. Chem Soc Rev 2024; 53:2300-2325. [PMID: 38284167 DOI: 10.1039/d3cs00382e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
Bioinspired two-dimensional (2D) nanofluidic membranes have been explored for the creation of high-performance ion transport systems that can mimic the delicate transport functions of living organisms. Advanced energy devices made from these membranes show excellent energy storage and conversion capabilities. Further research and development in this area are essential to unlock the full potential of energy devices and facilitate the development of high-performance equipment toward real-world applications and a sustainable future. However, there has been minimal review and summarization of 2D nanofluidic membranes in recent years. Thus, it is necessary to carry out an extensive review to provide a survey library for researchers in related fields. In this review, the classification and the raw materials that are used to construct 2D nanofluidic membranes are first presented. Second, the top-down and bottom-up methods for constructing 2D membranes are introduced. Next, the applications of bioinspired 2D membranes in osmotic energy, hydraulic energy, mechanical energy, photoelectric conversion, lithium batteries, and flow batteries are discussed in detail. Finally, the opportunities and challenges that 2D nanofluidic membranes are likely to face in the future are envisioned. This review aims to provide a broad knowledge base for constructing high-performance bioinspired 2D nanofluidic membranes for advanced energy applications.
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Affiliation(s)
- Dandan Lei
- School of Chemistry and Materials Science, University of Science and Technology of China, 230026, Hefei, Anhui, China.
- Suzhou Institute for Advanced Research, University of Science and Technology of China, 215123, Suzhou, Jiangsu, China
| | - Zhen Zhang
- School of Chemistry and Materials Science, University of Science and Technology of China, 230026, Hefei, Anhui, China.
- Suzhou Institute for Advanced Research, University of Science and Technology of China, 215123, Suzhou, Jiangsu, China
| | - Lei Jiang
- School of Chemistry and Materials Science, University of Science and Technology of China, 230026, Hefei, Anhui, China.
- Suzhou Institute for Advanced Research, University of Science and Technology of China, 215123, Suzhou, Jiangsu, China
- CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, China
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Ding LP, Guo ZA, Qiao FY, Guo YJ, Shao P, Ding F. Role of Edge Reconstruction in the Synthesis of Few-Layer Black Phosphorene. J Phys Chem Lett 2024; 15:1999-2005. [PMID: 38349331 DOI: 10.1021/acs.jpclett.4c00358] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Recent advancements in preparing few-layer black phosphorene (BP) are hindered by edge reconstruction challenges. Our previous studies have revealed the factors contributing to the difficulty of growing few-layer BP. In this study, we have successfully identified three reconstructed edges in bi- and multilayer BP through a combination of the crystal structure analysis by particle swarm optimization (CALYPSO) global structure search and density functional theory (DFT). Notably, the reconstruction between adjacent layers proves more beneficial than self-passivation or maintaining pristine edges. Among the reconstructed edges, the reconstructed ZZ edge is the most stable, regardless of the number of layers. Calculated electronic band structures reveal a significant transition in the electronic properties of black phosphorus nanoribbons (BPNRs), changing from metallic to semiconducting. This insight not only enhances the understanding of the fundamental properties of BP but also provides valuable theoretical guidance for the experimental growth of BPNRs or black phosphorus nanowires (BPNWs).
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Affiliation(s)
- Li-Ping Ding
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong 518055, People's Republic of China
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Zi Ao Guo
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Fei-Yue Qiao
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Yi-Jin Guo
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Peng Shao
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Feng Ding
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong 518055, People's Republic of China
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Zheng C, Shi Y, Tang B, Zhang J. Black Phosphorus-Tungsten Oxide Sandwich-like Nanostructures for Highly Selective NO 2 Detection. SENSORS (BASEL, SWITZERLAND) 2024; 24:1376. [PMID: 38474912 DOI: 10.3390/s24051376] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Revised: 02/16/2024] [Accepted: 02/19/2024] [Indexed: 03/14/2024]
Abstract
Modern chemical production processes often emit complex mixtures of gases, including hazardous pollutants such as NO2. Although widely used, gas sensors based on metal oxide semiconductors such as WO3 respond to a wide range of interfering gases other than NO2. Consequently, developing WO3 gas sensors with high NO2 selectivity is challenging. In this study, a simple one-step hydrothermal method was used to prepare WO3 nanorods modified with black phosphorus (BP) flakes as sensitive materials for NO2 sensing, and BP-WO3-based micro-electromechanical system gas sensors were fabricated. The characterization of the as-prepared BP-WO3 composite through X-ray diffraction scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the successful formation of the sandwich-like nanostructures. The result of gas-sensing tests with 2-14 ppm NO2 indicated that the sensor response was 1.25-2.21 with response-recovery times of 36 and 36 s, respectively, at 190 °C. In contrast to pure WO3, which exhibited a response of 1.07-2.2 to 0.3-5 ppm H2S at 160 °C, BP-WO3 showed almost no response to H2S. Thus, compared with pure WO3, BP-WO3 exhibited significantly improved NO2 selectivity. Overall, the BP-WO3 composite with sandwich-like nanostructures is a promising material for developing highly selective NO2 sensors for practical applications.
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Affiliation(s)
- Canda Zheng
- Higher Educational Key Laboratory for Measuring & Control Technology and Instrumentations of Heilongjiang Province, Harbin University of Science and Technology, Harbin 150080, China
| | - Yunbo Shi
- Higher Educational Key Laboratory for Measuring & Control Technology and Instrumentations of Heilongjiang Province, Harbin University of Science and Technology, Harbin 150080, China
| | - Bolun Tang
- Higher Educational Key Laboratory for Measuring & Control Technology and Instrumentations of Heilongjiang Province, Harbin University of Science and Technology, Harbin 150080, China
| | - Jianhua Zhang
- Higher Educational Key Laboratory for Measuring & Control Technology and Instrumentations of Heilongjiang Province, Harbin University of Science and Technology, Harbin 150080, China
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Sung SH, Suh JM, Hwang YJ, Jang HW, Park JG, Jun SC. Data-centric artificial olfactory system based on the eigengraph. Nat Commun 2024; 15:1211. [PMID: 38332010 PMCID: PMC10853498 DOI: 10.1038/s41467-024-45430-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2023] [Accepted: 01/23/2024] [Indexed: 02/10/2024] Open
Abstract
Recent studies of electronic nose system tend to waste significant amount of important data in odor identification. Until now, the sensitivity-oriented data composition has made it difficult to discover meaningful data to apply artificial intelligence in terms of in-depth analysis for odor attributes specifying the identities of gas molecules, ultimately resulting in hindering the advancement of the artificial olfactory technology. Here, we realize a data-centric approach to implement standardized artificial olfactory systems inspired by human olfactory mechanisms by formally defining and utilizing the concept of Eigengraph in electrochemisty. The implicit odor attributes of the eigengraphs were mathematically substantialized as the Fourier transform-based Mel-Frequency Cepstral Coefficient feature vectors. Their effectiveness and applicability in deep learning processes for gas classification have been clearly demonstrated through experiments on complex mixed gases and automobile exhaust gases. We suggest that our findings can be widely applied as source technologies to develop standardized artificial olfactory systems.
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Affiliation(s)
- Seung-Hyun Sung
- School of Mechanical Engineering, Yonsei University, Seoul, 03722, Republic of Korea
- Finance Division, Daejeon Metropolitan Office of Education, Daejeon, 35239, Republic of Korea
| | - Jun Min Suh
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yun Ji Hwang
- School of Mechanical Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea.
| | - Jeon Gue Park
- Artificial Intelligence Laboratory, Tutorus Labs Inc., Seoul, 06595, Republic of Korea.
- Center for Educational Research, College of Education, Seoul National University, Seoul, 08826, Republic of Korea.
| | - Seong Chan Jun
- School of Mechanical Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
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Zhou Y, Wang S, Xin S, Sayin S, Yi Z, Li Z, Zaghloul M. Layer-Dependent Sensing Performance of WS 2-Based Gas Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:235. [PMID: 38276753 PMCID: PMC10818851 DOI: 10.3390/nano14020235] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2023] [Revised: 01/20/2024] [Accepted: 01/20/2024] [Indexed: 01/27/2024]
Abstract
Two-dimensional (2D) materials, such as tungsten disulfide (WS2), have attracted considerable attention for their potential in gas sensing applications, primarily due to their distinctive electrical properties and layer-dependent characteristics. This research explores the impact of the number of WS2 layers on the ability to detect gases by examining the layer-dependent sensing performance of WS2-based gas sensors. We fabricated gas sensors based on WS2 in both monolayer and multilayer configurations and methodically evaluated their response to various gases, including NO2, CO, NH3, and CH4 at room temperature and 50 degrees Celsius. In contrast to the monolayer counterpart, the multilayer WS2 sensor exhibits enhanced gas sensing performance at higher temperatures. Furthermore, a comprehensive gas monitoring system was constructed employing these WS2-based sensors, integrated with additional electronic components. To facilitate user access to data and receive alerts, sensor data were transmitted to a cloud-based platform for processing and storage. This investigation not only advances our understanding of 2D WS2-based gas sensors but also underscores the importance of layer engineering in tailoring their sensing capabilities for diverse applications. Additionally, the development of a gas monitoring system employing 2D WS2 within this study holds significant promise for future implementation in intelligent, efficient, and cost-effective sensor technologies.
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Affiliation(s)
- You Zhou
- Department of Electrical & Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA; (S.X.); (Z.Y.)
| | - Sheng Wang
- Department of Biomedical Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA (Z.L.)
| | - Sichen Xin
- Department of Electrical & Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA; (S.X.); (Z.Y.)
| | - Sezin Sayin
- Department of Electrical & Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA; (S.X.); (Z.Y.)
| | - Zhiqiang Yi
- Department of Electrical & Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA; (S.X.); (Z.Y.)
| | - Zhenyu Li
- Department of Biomedical Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA (Z.L.)
| | - Mona Zaghloul
- Department of Electrical & Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USA; (S.X.); (Z.Y.)
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Yu J, Tian H, Lai G, Wang J, Zhao J, Tang G, Gao J, Yu XF, Qu G, Zhang H, Jiang G. Accelerating the environmental applications of black phosphorus: A review. THE SCIENCE OF THE TOTAL ENVIRONMENT 2024; 907:167829. [PMID: 37852486 DOI: 10.1016/j.scitotenv.2023.167829] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 09/28/2023] [Accepted: 10/12/2023] [Indexed: 10/20/2023]
Abstract
Since its rediscovery in 2014, layered black phosphorus (BP) has received extensive attention as a new two-dimensional semiconductor. BP is a promising material with properties of a large surface-to-volume ratio, wide light absorption range, tunable band gap, and high charge carrier mobility. These unique characteristics of BP make it a promising contender for various applications, particularly in the realm of environmental applications. This literature review provides a comprehensive discussion and overview of the latest developments in utilizing BP for environmental purposes. The review starts with the applications of BP in photocatalysis including photodegradation of refractory pollutants, H2 evolution reaction (HER), and reduction of CO2 and N2. In the following section, Environmental electrocatalysis of HER and N2 reduction reaction (NRR) is discussed. In addition, BP-based environmental sensing (detection of heavy metal ions, antibiotics, mycotoxins, NOx) and eco-friendly halogen-free flame retardant are summarized as well. Finally, a thorough comprehension of the current state and potential future trends of BP-based nanomaterials for various environmental applications are presented.
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Affiliation(s)
- Jiachen Yu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, China; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Haijiang Tian
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, China; Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, China
| | - Gengchang Lai
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiahong Wang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China; University of Chinese Academy of Sciences, Beijing 100049, China.
| | - Jing Zhao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Gang Tang
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jie Gao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, China; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Xue-Feng Yu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guangbo Qu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, China; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Haiyan Zhang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.
| | - Guibin Jiang
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, China; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China; Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, China
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10
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Allosh A, Pantis-Simut CA, Filipoiu N, Preda AT, Necula G, Ghitiu I, Anghel DV, Dulea MA, Nemnes GA. Tuning phosphorene and MoS 2 2D materials for detecting volatile organic compounds associated with respiratory diseases. RSC Adv 2024; 14:1803-1812. [PMID: 38192312 PMCID: PMC10772541 DOI: 10.1039/d3ra07685g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Accepted: 12/21/2023] [Indexed: 01/10/2024] Open
Abstract
Efficient identification of volatile organic compounds (VOCs) is essential for the rapid diagnostication of respiratory diseases. By detecting specific biomarkers associated with different pathologies one may distinguish between tuberculosis, nosocomial pneumonia, Aspergillus fumigatus, influenza and SARS-CoV-2 virus infections. Phosphorene and MoS2 are potential candidates from the class of 2D graphene-like materials, which can be used as active layers for sensing elements. However, as the target molecules poorly adhere to the pristine layers, binding centers are created by introducing substitutional impurities. The adsorbed VOCs induce modifications in the electrical properties of the customized active layers. For each biomarker and a sequence of substitutional impurities, a pattern of conductivities is obtained, which enables the detection of an unknown test specimen. Exploring multiple biosensor configurations we find an optimal design yielding a considerable selectivity for the five biomarker compounds.
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Affiliation(s)
- Alaa Allosh
- Horia Hulubei National Institute for Physics and Nuclear Engineering Magurele-Ilfov 077126 Romania
- University of Bucharest, Faculty of Physics Magurele-Ilfov 077125 Romania
| | - Calin-Andrei Pantis-Simut
- Horia Hulubei National Institute for Physics and Nuclear Engineering Magurele-Ilfov 077126 Romania
- University of Bucharest, Faculty of Physics Magurele-Ilfov 077125 Romania
- Research Institute of the University of Bucharest (ICUB) 90 Panduri Street Bucharest 050663 Romania
| | - Nicolae Filipoiu
- Horia Hulubei National Institute for Physics and Nuclear Engineering Magurele-Ilfov 077126 Romania
- University of Bucharest, Faculty of Physics Magurele-Ilfov 077125 Romania
| | - Amanda Teodora Preda
- Horia Hulubei National Institute for Physics and Nuclear Engineering Magurele-Ilfov 077126 Romania
- University of Bucharest, Faculty of Physics Magurele-Ilfov 077125 Romania
- Research Institute of the University of Bucharest (ICUB) 90 Panduri Street Bucharest 050663 Romania
| | - George Necula
- Horia Hulubei National Institute for Physics and Nuclear Engineering Magurele-Ilfov 077126 Romania
| | - Ioan Ghitiu
- University of Bucharest, Faculty of Physics Magurele-Ilfov 077125 Romania
- National Institute for Laser, Plasma and Radiation Physics Magurele-Ilfov 077125 Romania
| | - Dragos-Victor Anghel
- Horia Hulubei National Institute for Physics and Nuclear Engineering Magurele-Ilfov 077126 Romania
- University of Bucharest, Faculty of Physics Magurele-Ilfov 077125 Romania
- Research Institute of the University of Bucharest (ICUB) 90 Panduri Street Bucharest 050663 Romania
| | - Mihnea Alexandru Dulea
- Horia Hulubei National Institute for Physics and Nuclear Engineering Magurele-Ilfov 077126 Romania
| | - George Alexandru Nemnes
- Horia Hulubei National Institute for Physics and Nuclear Engineering Magurele-Ilfov 077126 Romania
- University of Bucharest, Faculty of Physics Magurele-Ilfov 077125 Romania
- Research Institute of the University of Bucharest (ICUB) 90 Panduri Street Bucharest 050663 Romania
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11
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Zhang W, Zhang X, Ono LK, Qi Y, Oughaddou H. Recent Advances in Phosphorene: Structure, Synthesis, and Properties. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2303115. [PMID: 37726245 DOI: 10.1002/smll.202303115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Revised: 08/27/2023] [Indexed: 09/21/2023]
Abstract
Phosphorene is a 2D phosphorus atomic layer arranged in a honeycomb lattice like graphene but with a buckled structure. Since its exfoliation from black phosphorus in 2014, phosphorene has attracted tremendous research interest both in terms of synthesis and fundamental research, as well as in potential applications. Recently, significant attention in phosphorene is motivated not only by research on its fundamental physical properties as a novel 2D semiconductor material, such as tunable bandgap, strong in-plane anisotropy, and high carrier mobility, but also by the study of its wide range of potential applications, such as electronic, optoelectronic, and spintronic devices, energy conversion and storage devices. However, a lot of avenues remain to be explored including the fundamental properties of phosphorene and its device applications. This review recalls the current state of the art of phosphorene and its derivatives, touching upon topics on structure, synthesis, characterization, properties, stability, and applications. The current needs and future opportunities for phosphorene are also discussed.
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Affiliation(s)
- Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Xuan Zhang
- School of Materials and Physics, China University of Mining and Technology, Xuzhou, 221116, China
| | - Luis K Ono
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa, 904-0495, Japan
| | - Yabing Qi
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa, 904-0495, Japan
| | - Hamid Oughaddou
- Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d'Orsay (ISMO), Bât. 520, Orsay, 91405, France
- Département de Physique, CY Cergy-Paris Université, Cergy-Pontoise Cedex, F-95031, France
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12
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Yang Y, Zong B, Xu Q, Li Q, Li Z, Mao S. Discriminative Analysis of NO x Gases by Two-Dimensional Violet Phosphorus Field-Effect Transistors. Anal Chem 2023. [PMID: 38019807 DOI: 10.1021/acs.analchem.3c02894] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
Two-dimensional violet phosphorus (VP) has emerged as a new sensing material in various sensing applications due to its unique electrical properties and high stability among allotropes of phosphorus. Currently, the research of the VP-based analysis method is at the early stage. In this work, a VP nanosheet-based field-effect transistor (FET) sensor is reported for the detection of NO2 and N2O gases with extraordinary sensing performance. This sensor can achieve excellent sensitivity of up to ∼50% current change/ppm and a low detection limit of 5.9 ppb and enables the NO2 analysis in various mixed gases. Moreover, this sensor can effectively distinguish between NO2 and N2O gases, which is a big challenge for current FET or chemiresistor gas sensors. The different sensing behaviors of the VP sensor to NO2 and N2O gases have been investigated, and the mechanism study shows that the adsorption energy, bond length of the gas molecule on the VP surface, and the decomposition of N2O led to the differential responses. This work is one of the pioneer studies of VP gas sensors and presents a new sensing method for the discriminative analysis of NO2 and N2O for greenhouse gas emission monitoring and air quality control.
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Affiliation(s)
- Yuehong Yang
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
| | - Boyang Zong
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
| | - Qikun Xu
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
| | - Qiuju Li
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
| | - Zhuo Li
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
| | - Shun Mao
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse, Tongji University, 1239 Siping Road, Shanghai 200092, China
- Shanghai Institute of Pollution Control and Ecological Security, Shanghai 200092, China
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13
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Cheng Y, Li Z, Cheng L, Yuan Y, Xie E, Cao X, Xin Z, Liu Y, Tang T, Hu X, Xu K, Manh Hung C, Jannat A, Li YX, Chen H, Ou JZ. Thickness-Dependent Room-Temperature Optoelectronic Gas Sensing Performances of 2D Nonlayered Indium Oxide Crystals from a Liquid Metal Printing Process. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38015181 DOI: 10.1021/acsami.3c12787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Due to excellent gas sensing performances, such as high responsivity, good selectivity, and long-term stability, two-dimensional (2D) nonlayered metal oxide semiconductors have attracted wide attention. However, their thickness-dependent gas sensing behaviors are rarely investigated, which is critical in the development of practical 2D sensors. In this work, 2D In2O3 crystals with a range of thicknesses are realized by extracting the self-limited oxide layer from the liquid indium droplets in a controlled environment. A strong thickness-dependent optoelectronic NO2 sensing behavior at room temperature is observed. While full reversibility and excellent selectivity toward NO2 are shown despite the thicknesses of 2D In2O3, the 1.9 nm thick In2O3 exhibits a maximum response amplitude (ΔI/Ig = 1300) for 10 ppm of NO2 at room temperature with 365 nm light irradiation, which is about 18, 58, and 810 times larger than those of its 3.1 nm thick, 4.5 nm thick, and 6.2 nm thick counterparts, respectively. The shortest response and recovery times (i.e., 40 s/48 s) are demonstrated for the 1.88 nm thick In2O3 as well. We correlate such a phenomenon with the change in the In2O3 band structure, which is influenced by the thickness of 2D crystals. This work provides in-depth knowledge of the thickness-dependent gas-sensing performances of emerging 2D nonlayered metal oxide crystals, as well as the opportunities to develop next-generation high-performing room-temperature gas sensors.
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Affiliation(s)
- Yinfen Cheng
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Zhong Li
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
- Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology, Nanjing Institute of Technology, Nanjing 211167, China
| | - Liang Cheng
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Yuxiao Yuan
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - En Xie
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Xiaolong Cao
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Zhenqing Xin
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Yaoyang Liu
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Tao Tang
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Xinyi Hu
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Kai Xu
- School of Engineering, RMIT University, Melbourne 3000, Australia
| | - Chu Manh Hung
- International Training Institute for Materials Science, Hanoi University of Science and Technology, Hanoi 10000, Viet Nam
| | - Azmira Jannat
- School of Engineering, RMIT University, Melbourne 3000, Australia
| | - Yong Xiang Li
- School of Engineering, RMIT University, Melbourne 3000, Australia
| | - Hui Chen
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Jian Zhen Ou
- Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
- School of Engineering, RMIT University, Melbourne 3000, Australia
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14
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Lan P, Miao N, Gan Y, Peng L, Han S, Zhou J, Sun Z. High-Throughput Computational Design of 2D Ternary Chalcogenides for Sustainable Energy. J Phys Chem Lett 2023; 14:10489-10498. [PMID: 37967465 DOI: 10.1021/acs.jpclett.3c02486] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2023]
Abstract
Two-dimensional materials are considered to be promising for next-generation electronic and energy devices. However, the limited availability of 2D materials hinders their applications. Herein, we employed high-throughput computation to discover new 2D materials by cleaving the bulk and to investigate their electronic, thermoelectric, and optoelectronic properties. Using our database containing 810 structures of chalcogenides ABX3 (A or B = Al, Ga, In, Si, Ge, Sn, P, As, Sb, and Bi; X = S, Se, and Te), we identified 204 new 2D compounds promising for experimental preparation according to the exfoliation energy. Notably, 96 of them are more easily exfoliated than graphene, 52 compounds show higher Seebeck coefficients than Bi2Te3 at 300 K, and 20 compounds have power factors beyond 2 × 10-3 Wm-1 K-2 at 900 K. Also, 6 new compounds exhibit high theoretical photovoltaic efficiency exceeding 30%. Our findings expand the 2D materials family and provide new 2D compounds for sustainable thermoelectric and optoelectronic energy applications.
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Affiliation(s)
- Penghua Lan
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Naihua Miao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Yu Gan
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Liyu Peng
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Siyu Han
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Jian Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhimei Sun
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
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15
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Xia Y, Berry JM, Haataja MP. Classification and Simulation of Structural Phase Transformation-Induced Interfacial Defects in Group VI Transition-Metal Dichalcogenide Monolayers. NANO LETTERS 2023; 23:9445-9450. [PMID: 37820381 DOI: 10.1021/acs.nanolett.3c02876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Polymorphic 2D materials have recently emerged as promising candidates for use in nanoelectronic devices by way of their ability to undergo structural phase transformations induced by external fields. Under cyclic transformations, however, induced interfacial defects may proliferate and compromise the system properties. Herein, we first employ geometric analysis to classify such defects generated during the 2H ↔ 1T and 2H ↔ 1T' transformations in group VI transition-metal dichalcogenide monolayers. Then, simulations of a mesoscale model with atomistic spatial resolution are conducted to assess the proliferation of such defects during cyclic 2H ↔ 1T transformations. It is shown that defect densities reach a steady state, with the 2H phase remaining more pristine than the 1T and 1T' states. We expect that the effects of these defects on the device performance are application-dependent and will require further inquiry.
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Affiliation(s)
- Yang Xia
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Joel M Berry
- Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94550, United States
| | - Mikko P Haataja
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544, United States
- Princeton Materials Institute, Princeton University, Princeton, New Jersey 08544, United States
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16
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Li J, Zhou Y, Liu K, Wang Y, Li H, Okulov A. Tunable Electronic Transport of New-Type 2D Iodine Materials Affected by the Doping of Metal Elements. Molecules 2023; 28:7159. [PMID: 37894638 PMCID: PMC10609309 DOI: 10.3390/molecules28207159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Revised: 10/13/2023] [Accepted: 10/16/2023] [Indexed: 10/29/2023] Open
Abstract
2D iodine structures under high pressures are more attractive and valuable due to their special structures and excellent properties. Here, electronic transport properties of such 2D iodine structures are theoretically studied by considering the influence of the metal-element doping. In equilibrium, metal elements in Group 1 can enhance the conductance dramatically and show a better enhancement effect. Around the Fermi level, the transmission probability exceeds 1 and can be improved by the metal-element doping for all devices. In particular, the device density of states explains well the distinctions between transmission coefficients originating from different doping methods. Contrary to the "big" site doping, the "small" site doping changes transmission eigenstates greatly, with pronounced electronic states around doped atoms. In non-equilibrium, the conductance of all devices is almost weaker than the equilibrium conductance, decreasing at low voltages and fluctuating at high voltages with various amplitudes. Under biases, K-big doping shows the optimal enhancement effect, and Mg-small doping exhibits the most effective attenuation effect on conductance. Contrastingly, the currents of all devices increase with bias linearly. The metal-element doping can boost current at low biases and weaken current at high voltages. These findings contribute much to understanding the effects of defects on electronic properties and provide solid support for the application of new-type 2D iodine materials in controllable electronics and sensors.
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Affiliation(s)
- Jie Li
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China; (Y.Z.); (K.L.); (Y.W.)
| | - Yuchen Zhou
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China; (Y.Z.); (K.L.); (Y.W.)
| | - Kun Liu
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China; (Y.Z.); (K.L.); (Y.W.)
| | - Yifan Wang
- School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China; (Y.Z.); (K.L.); (Y.W.)
| | - Hui Li
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, China
| | - Artem Okulov
- M.N. Mikheev Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, Ekaterinburg 620077, Russia;
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17
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Atkare S, Kaushik SD, Jagtap S, Rout CS. Room-temperature chemiresistive ammonia sensors based on 2D MXenes and their hybrids: recent developments and future prospects. Dalton Trans 2023; 52:13831-13851. [PMID: 37724340 DOI: 10.1039/d3dt02401f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/20/2023]
Abstract
Detection of ammonia (NH3) gas at room temperature is essential in a variety of sectors, including pollution monitoring, commercial safety and medical services, etc. Two-dimensional (2D) materials have emerged as fascinating candidates for gas-sensing applications due to their distinct properties. MXenes, a type of 2D transition metal carbides/nitrides/carbonotrides, have drawn the interest of researchers due to their high conductivity, large surface area, and changing surface chemistry. The review begins by describing the NH3 gas-detecting methods of 2D materials and then concentrates on MXene-based sensors, emphasising the benefits that MXenes provide in this context. The study also explains the prime factors involved in evaluating sensor performance, which include sensor response, sensitivity, selectivity, stability, charge transfer values, adsorption energy and response/recovery times. Subsequently, the review covers two main categories: pristine/intercalated MXenes and MXene-based hybrid materials. The review investigates the approaches for improving the sensing characteristics of pristine and intercalated MXenes by introducing MXene hybrids like MXene-metal oxide hybrids, MXene-transition metal dichalcogenides hybrid, MXene-other 2D materials hybrid, MXene-polymers and other hybrids and other MXene-derived materials. In summary, this review offers a thorough overview of current advancements and potential applications for room-temperature ammonia sensors based on 2D MXenes and their hybrids. In order to pave the way for future improvements in MXene-based gas-sensing technology for room temperature ammonia detection, the study concludes by outlining potential future scope and conclusions.
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Affiliation(s)
- Sayali Atkare
- Department of Physics, Savitribai Phule Pune University, Ganeshkhind, Pune 411007, India
| | - Som Datta Kaushik
- UGC-DAE Consortium for Scientific Research Mumbai Centre, R-5 Shed, BARC, Mumbai 400085, India
| | - Shweta Jagtap
- Department of Electronic and Instrumentation Science, Savitribai Phule Pune University, Ganeshkhind, Pune 411007, India.
| | - Chandra Sekhar Rout
- Centre for Nano and Material Sciences, Jain (Deemed-to-be University), Jain Global Campus, Kanakapura Road, Bangalore - 562112, Karnataka, India.
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18
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Wang G, Park JM, Kang T, Lee SJ, Park HS. Anion Storage of MXenes. SMALL METHODS 2023; 7:e2201440. [PMID: 36707415 DOI: 10.1002/smtd.202201440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2022] [Revised: 12/27/2022] [Indexed: 06/18/2023]
Abstract
Recently, anion storage materials have gained significant attention owing to the widened cell voltage and additional anion storing capacity for a large energy density. MXenes are considered as the emerging anion storing materials owing to their sufficient interlayer spacing, rich surface chemistries, tunable structures, remarkable electrochemical properties, and mechanical integrity. Herein, a comprehensive review on the anion storage of MXenes covering their anion storage mechanism and state-of-the-art chemical strategies for the improved anion storage performances is reported. The recent progress of MXenes on aluminum ion batteries, metal halogen batteries, halogen ion batteries, and electrochemical electrode deionization is addressed. The scientific and technical challenges and the research direction into the anion storage of MXenes are also addressed and finally the authors' perspective on anion storage of MXenes is provided. Therefore, this review offers an insight into the rational design of MXenes for anion storage materials and the correlation of surface chemistries and structural modifications with anion storage properties for the applications into electrochemical energy storage and water purification.
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Affiliation(s)
- Guanyao Wang
- School of Chemical Engineering, Sungkyunkwan University, 2066, Seoburo, Jangan-gu, Suwon, 440-746, Republic of Korea
| | - Jae Min Park
- School of Chemical Engineering, Sungkyunkwan University, 2066, Seoburo, Jangan-gu, Suwon, 440-746, Republic of Korea
| | - Taehun Kang
- School of Chemical Engineering, Sungkyunkwan University, 2066, Seoburo, Jangan-gu, Suwon, 440-746, Republic of Korea
| | - Sang Joon Lee
- School of Chemical Engineering, Sungkyunkwan University, 2066, Seoburo, Jangan-gu, Suwon, 440-746, Republic of Korea
| | - Ho Seok Park
- School of Chemical Engineering, Sungkyunkwan University, 2066, Seoburo, Jangan-gu, Suwon, 440-746, Republic of Korea
- Department of Health Sciences and Technology, Samsung Advanced Institute for Health Sciences and Technology (SAIHST), Sungkyunkwan University (SKKU), 2066, Seoburo, Jangan-gu, Suwon, 440-746, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), 2066, Seoburo, Jangan-gu, Suwon, 440-746, Republic of Korea
- SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University (SKKU), 2066, Seoburo, Jangan-gu, Suwon, 440-746, Republic of Korea
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19
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Dutta T, Noushin T, Tabassum S, Mishra SK. Road Map of Semiconductor Metal-Oxide-Based Sensors: A Review. SENSORS (BASEL, SWITZERLAND) 2023; 23:6849. [PMID: 37571634 PMCID: PMC10422562 DOI: 10.3390/s23156849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Revised: 06/22/2023] [Accepted: 07/19/2023] [Indexed: 08/13/2023]
Abstract
Identifying disease biomarkers and detecting hazardous, explosive, flammable, and polluting gases and chemicals with extremely sensitive and selective sensor devices remains a challenging and time-consuming research challenge. Due to their exceptional characteristics, semiconducting metal oxides (SMOxs) have received a lot of attention in terms of the development of various types of sensors in recent years. The key performance indicators of SMOx-based sensors are their sensitivity, selectivity, recovery time, and steady response over time. SMOx-based sensors are discussed in this review based on their different properties. Surface properties of the functional material, such as its (nano)structure, morphology, and crystallinity, greatly influence sensor performance. A few examples of the complicated and poorly understood processes involved in SMOx sensing systems are adsorption and chemisorption, charge transfers, and oxygen migration. The future prospects of SMOx-based gas sensors, chemical sensors, and biological sensors are also discussed.
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Affiliation(s)
- Taposhree Dutta
- Department of Chemistry, IIEST Shibpur, Howrah 711103, West Bengal, India;
| | - Tanzila Noushin
- Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA;
| | - Shawana Tabassum
- Department of Electrical Engineering, The University of Texas at Tyler, Tyler, TX 75799, USA;
| | - Satyendra K. Mishra
- Danish Offshore Technology Center, Technical University of Denmark, 2800 Lyngby, Denmark
- SRCOM, Centre Technologic de Telecomunicacions de Catalunya, 08860 Castelldefels, Barcelona, Spain
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20
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Maity A, Pu H, Sui X, Chang J, Bottum KJ, Jin B, Zhou G, Wang Y, Lu G, Chen J. Scalable graphene sensor array for real-time toxins monitoring in flowing water. Nat Commun 2023; 14:4184. [PMID: 37443127 DOI: 10.1038/s41467-023-39701-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2021] [Accepted: 06/26/2023] [Indexed: 07/15/2023] Open
Abstract
Risk management for drinking water often requires continuous monitoring of various toxins in flowing water. While they can be readily integrated with existing water infrastructure, two-dimensional (2D) electronic sensors often suffer from device-to-device variations due to the lack of an effective strategy for identifying faulty devices from preselected uniform devices based on electronic properties alone, resulting in sensor inaccuracy and thus slowing down their real-world applications. Here, we report the combination of wet transfer, impedance and noise measurements, and machine learning to facilitate the scalable nanofabrication of graphene-based field-effect transistor (GFET) sensor arrays and the efficient identification of faulty devices. Our sensors were able to perform real-time detection of heavy-metal ions (lead and mercury) and E. coli bacteria simultaneously in flowing tap water. This study offers a reliable quality control protocol to increase the potential of electronic sensors for monitoring pollutants in flowing water.
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Affiliation(s)
- Arnab Maity
- Department of Mechanical Engineering, College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Milwaukee, WI, 53211, USA
| | - Haihui Pu
- Department of Mechanical Engineering, College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Milwaukee, WI, 53211, USA
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
- Chemical Sciences and Engineering Division, Physical Sciences and Engineering Directorate, Argonne National Laboratory, 9700 S. Cass Ave., Lemont, IL, 60439, USA
| | - Xiaoyu Sui
- Department of Mechanical Engineering, College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Milwaukee, WI, 53211, USA
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
- Chemical Sciences and Engineering Division, Physical Sciences and Engineering Directorate, Argonne National Laboratory, 9700 S. Cass Ave., Lemont, IL, 60439, USA
| | - Jingbo Chang
- Department of Mechanical Engineering, College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Milwaukee, WI, 53211, USA
| | - Kai J Bottum
- Department of Mechanical Engineering, College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Milwaukee, WI, 53211, USA
| | - Bing Jin
- Department of Mechanical Engineering, College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Milwaukee, WI, 53211, USA
| | - Guihua Zhou
- Department of Mechanical Engineering, College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Milwaukee, WI, 53211, USA
| | - Yale Wang
- Department of Mechanical Engineering, College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Milwaukee, WI, 53211, USA
| | - Ganhua Lu
- Department of Mechanical Engineering, College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Milwaukee, WI, 53211, USA
| | - Junhong Chen
- Department of Mechanical Engineering, College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Milwaukee, WI, 53211, USA.
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA.
- Chemical Sciences and Engineering Division, Physical Sciences and Engineering Directorate, Argonne National Laboratory, 9700 S. Cass Ave., Lemont, IL, 60439, USA.
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21
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Kumbhakar P, Jayan JS, Sreedevi Madhavikutty A, Sreeram P, Saritha A, Ito T, Tiwary CS. Prospective applications of two-dimensional materials beyond laboratory frontiers: A review. iScience 2023; 26:106671. [PMID: 37168568 PMCID: PMC10165413 DOI: 10.1016/j.isci.2023.106671] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/13/2023] Open
Abstract
The development of nanotechnology has been advancing for decades and gained acceleration in the 21st century. Two-dimensional (2D) materials are widely available, giving them a wide range of material platforms for technological study and the advancement of atomic-level applications. The design and application of 2D materials are discussed in this review. In order to evaluate the performance of 2D materials, which might lead to greater applications benefiting the electrical and electronics sectors as well as society, the future paradigm of 2D materials needs to be visualized. The development of 2D hybrid materials with better characteristics that will help industry and society at large is anticipated to result from intensive research in 2D materials. This enhanced evaluation might open new opportunities for the synthesis of 2D materials and the creation of devices that are more effective than traditional ones in various sectors of application.
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Affiliation(s)
- Partha Kumbhakar
- Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302 India
- Department of Physics and Electronics, CHRIST (Deemed to Be University), Bangalore 560029, India
| | - Jitha S. Jayan
- Department of Chemistry, National Institute of Technology Calicut, Calicut, Kerala, India
- Department of Chemistry, Amrita Vishwa Vidyapeetham, Amritapuri, Kollam, Kerala, India
| | | | - P.R. Sreeram
- Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302 India
| | - Appukuttan Saritha
- Department of Chemistry, Amrita Vishwa Vidyapeetham, Amritapuri, Kollam, Kerala, India
| | - Taichi Ito
- Department of Chemical System Engineering, The University of Tokyo, Tokyo 113-0033, Japan
- Center for Disease Biology and Integrative Medicine, Faculty of Medicine, The University of Tokyo, Tokyo 113-0033, Japan
| | - Chandra Sekhar Tiwary
- Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302 India
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22
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Yang Y, Mao J, Yin D, Zhang T, Liu C, Hao W, Wang Y, Hao J. Synergy of S-vacancy and heterostructure in BiOCl/Bi 2S 3-x boosting room-temperature NO 2 sensing. JOURNAL OF HAZARDOUS MATERIALS 2023; 455:131591. [PMID: 37172379 DOI: 10.1016/j.jhazmat.2023.131591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 04/23/2023] [Accepted: 05/05/2023] [Indexed: 05/14/2023]
Abstract
The special physicochemical properties of Bi2S3 nanomaterial endow it to be exceptional NO2 sensing properties. However, sensors based on pure Bi2S3 cannot detect trace NO2 at room temperature effectively due to the scanty active sites and poor charge transfer efficiency. Herein, vacancy defect and heterostructure engineering are rationally integrated to explore BiOCl/Bi2S3-x heterostructure with rich S vacancies to enhance NO2 sensing performance. The optimized sensor based on S-vacancy-rich BiOCl/Bi2S3-x heterostructure exhibited a high response value (Rg/Ra = 29.1) to 1 ppm NO2 at room temperature, which was about 17 times compared to the pristine Bi2S3. Meanwhile, the BiOCl/Bi2S3-x sensor also exhibited a short response time (36 s) towards 1 ppm NO2 and a low theoretical detection limit (2 ppb). The superior response value of S-vacancy-rich BiOCl/Bi2S3-x heterostructures was ascribed to the improved electron migration at the heterointerface and the additional exposed active sites caused by the S vacancies in Bi2S3-x. Additionally, the sensors based on S-vacancy-rich BiOCl/Bi2S3-x heterostructures showed good long-term stability, outstanding selectivity, and good flexibility. This study offers an effective method for synergistically engineering defect and heterostructure to enhance gas sensing properties at room temperature.
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Affiliation(s)
- Yongchao Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China; The 49th Research Institute of China Electronics Technology Group Corporation, Harbin 150028, China
| | - Junpeng Mao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Dongmin Yin
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Tianyue Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Chengli Liu
- The 49th Research Institute of China Electronics Technology Group Corporation, Harbin 150028, China
| | - Weixun Hao
- State Key Laboratory of Efficient and Clean Coal-fired Utility Boilers, Harbin Boiler Company Limited, Harbin 150046, China
| | - You Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Juanyuan Hao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
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23
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Mollaamin F, Monajjemi M. Tailoring and functionalizing the graphitic-like GaN and GaP nanostructures as selective sensors for NO, NO 2, and NH 3 adsorbing: a DFT study. J Mol Model 2023; 29:170. [PMID: 37148380 DOI: 10.1007/s00894-023-05567-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/19/2023] [Accepted: 04/19/2023] [Indexed: 05/08/2023]
Abstract
CONTEXT Langmuir adsorption of gas molecules of NO, NO2, and NH3 on the graphitic GaN and GaP sheets has been accomplished using density functional theory. The changes of charge density have shown a more important charge transfer for GaN compared to GaP which acts both as the electron donor while gas molecules act as the stronger electron acceptors through adsorption on the graphitic-like GaN surface. The adsorption of NO and NO2 molecules introduced spin polarization in the PL-GaN sheet, indicating that it can be employed as a magnetic gas sensor for NO and NO2 sensing. METHODS The partial electron density states based on "PDOS" graphs have explained that the NO and NO2 states in both of GaN and GaP nanosheets, respectively, have more of the conduction band between - 5 and - 10 eV, while expanded contribution of phosphorus states is close to gallium states, but nitrogen and oxygen states have minor contributions. GaN and GaP nanosheets represent having enough capability for adsorbing gases of NO, NO2, and NH3 through charge transfer from nitrogen atom and oxygen atom to the gallium element owing to intra-atomic and interatomic interactions. Ga sites in GaN and GaP nanosheets have higher interaction energy from Van der Waals' forces with gas molecules.
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Affiliation(s)
- Fatemeh Mollaamin
- Department of Biology, Faculty of Science, Kastamonu University, Kastamonu, Turkey.
| | - Majid Monajjemi
- Department of Chemical Engineering, Central Tehran Branch, Islamic Azad University, Tehran, Iran
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24
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Zhao Y, Wu G, Hung KM, Cho J, Choi M, Ó Coileáin C, Duesberg GS, Ren XK, Chang CR, Wu HC. Field Effect Transistor Gas Sensors Based on Mechanically Exfoliated Van der Waals Materials. ACS APPLIED MATERIALS & INTERFACES 2023; 15:17335-17343. [PMID: 36972407 DOI: 10.1021/acsami.2c23086] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The high surface-to-volume ratio and flatness of mechanically exfoliated van der Waals (vdW) layered materials make them an ideal platform to investigate the Langmuir absorption model. In this work, we fabricated field effect transistor gas sensors, based on a variety of mechanically exfoliated vdW materials, and investigated their electrical field-dependent gas sensing properties. The good agreement between the experimentally extracted intrinsic parameters, such as equilibrium constant and adsorption energy, and theoretically predicted values suggests validity of the Langmuir absorption model for vdW materials. Moreover, we show that the device sensing behavior depends crucially on the availability of carriers, and giant sensitivities and strong selectivity can be achieved at the sensitivity singularity. Finally, we demonstrate that such features provide a fingerprint for different gases to quickly detect and differentiate between low concentrations of mixed hazardous gases using sensor arrays.
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Affiliation(s)
- Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan 807, ROC
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, Faculty of Electrical Engineering and Information Technology (EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Georg S Duesberg
- Institute of Physics, Faculty of Electrical Engineering and Information Technology (EIT 2) and Center for Integrated Sensor Systems, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Xiang-Kui Ren
- School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, P. R. China
| | - Ching-Ray Chang
- Quantum Information Center, Chung Yuan Christian University, Taoyuan, Taiwan 32023, ROC
- Department of Physics, National Taiwan University, Taipei, Taiwan 106, ROC
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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25
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Paghi A, Mariani S, Barillaro G. 1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206100. [PMID: 36703509 DOI: 10.1002/smll.202206100] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 12/04/2022] [Indexed: 06/18/2023]
Abstract
Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained unaddressed toward the fabrication of 1D and 2D FET gas sensors for real-field applications, which are related to properties, synthesis, and integration of 1D and 2D materials into the transistor architecture. This review paper encompasses the whole assortment of 1D-i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)-and 2D-i.e., graphene, transition metal dichalcogenides (TMD), phosphorene-materials used in FET gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties of these devices. Eventually, pros and cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, pointing out weakness and highlighting future directions.
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Affiliation(s)
- Alessandro Paghi
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
| | - Stefano Mariani
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
| | - Giuseppe Barillaro
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
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26
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Batool S, Idrees M, Han ST, Roy VAL, Zhou Y. Electrical Contacts With 2D Materials: Current Developments and Future Prospects. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206550. [PMID: 36587964 DOI: 10.1002/smll.202206550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Current electrical contact models are occasionally insufficient at the nanoscale owing to the wide variations in outcomes between 2D mono and multi-layered and bulk materials that result from their distinctive electrostatics and geometries. Contrarily, devices based on 2D semiconductors present a significant challenge due to the requirement for electrical contact with resistances close to the quantum limit. The next generation of low-power devices is already hindered by the lack of high-quality and low-contact-resistance contacts on 2D materials. The physics and materials science of electrical contact resistance in 2D materials-based nanoelectronics, interface configurations, charge injection mechanisms, and numerical modeling of electrical contacts, as well as the most pressing issues that need to be resolved in the field of research and development, will all be covered in this review.
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Affiliation(s)
- Saima Batool
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Muhammad Idrees
- Additive Manufacturing Institute, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronics Science & Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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27
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NO 2 Physical-to-Chemical Adsorption Transition on Janus WSSe Monolayers Realized by Defect Introduction. Molecules 2023; 28:molecules28041644. [PMID: 36838632 PMCID: PMC9960547 DOI: 10.3390/molecules28041644] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 01/20/2023] [Accepted: 02/06/2023] [Indexed: 02/11/2023] Open
Abstract
As is well known, NO2 adsorption plays an important role in gas sensing and treatment because it expands the residence time of compounds to be treated in plasma-catalyst combination. In this work, the adsorption behaviors and mechanism of NO2 over pristine and Se-vacancy defect-engineered WSSe monolayers have been systematically investigated using density functional theory (DFT). The adsorption energy calculation reveals that introducing Se vacancy acould result in a physical-to-chemical adsorption transition for the system. The Se vacancy, the most possible point defect, could work as the optimum adsorption site, and it dramatically raises the transferred-electron quantities at the interface, creating an obviously electronic orbital hybridization between the adsorbate and substrate and greatly improving the chemical activity and sensing sensitivity of the WSSe monolayer. The physical-to-chemical adsorption transition could meet different acquirements of gas collection and gas treatment. Our work broadens the application filed of the Janus WSSe as NO2-gas-sensitive materials. In addition, it is found that both keeping the S-rich synthetic environments and applying compression strain could make the introduction of Se vacancy easier, which provides a promising path for industrial synthesis of Janus WSSe monolayer with Se vacancy.
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28
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Kadhim MM, Sadoon N, Abdullaha SA, Sabri Abbas Z, Mahdi Rheima A, Hachim SK. Evaluation the sensing affinities of Propylene oxide towards B2N2 monolayer: A dispersion corrected DFT study. INORG CHEM COMMUN 2023. [DOI: 10.1016/j.inoche.2023.110461] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
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29
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Rahmani M, Ghafoorifard H, Ahmadi MT. A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS. MICROMACHINES 2023; 14:184. [PMID: 36677247 PMCID: PMC9864923 DOI: 10.3390/mi14010184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/04/2022] [Revised: 12/27/2022] [Accepted: 01/09/2023] [Indexed: 06/17/2023]
Abstract
Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronics properties, is a suitable candidate for transistor and sensor applications. In this research, the electrical transport characteristics of high-performance field effect transistors based on graphene nanoscroll are studied in the framework of analytical modeling. To this end, the characterization of the proposed device is investigated by applying the analytical models of carrier concentration, quantum capacitance, surface potential, threshold voltage, subthreshold slope and drain induced barrier lowering. The analytical modeling starts with deriving carrier concentration and surface potential is modeled by adopting the model of quantum capacitance. The effects of quantum capacitance, oxide thickness, channel length, doping concentration, temperature and voltage are also taken into account in the proposed analytical models. To investigate the performance of the device, the current-voltage characteristics are also determined with respect to the carrier density and its kinetic energy. According to the obtained results, the surface potential value of front gate is higher than that of back side. It is noteworthy that channel length affects the position of minimum surface potential. The surface potential increases by increasing the drain-source voltage. The minimum potential increases as the value of quantum capacitance increases. Additionally, the minimum potential is symmetric for the symmetric structure (Vfg = Vbg). In addition, the threshold voltage increases by increasing the carrier concentration, temperature and oxide thickness. It is observable that the subthreshold slope gets closer to the ideal value of 60 mV/dec as the channel length increases. As oxide thickness increases the subthreshold slope also increases. For thinner gate oxide, the gate capacitance is larger while the gate has better control over the channel. The analytical results demonstrate a rational agreement with existing data in terms of trends and values.
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Affiliation(s)
- Meisam Rahmani
- Department of Electrical and Computer Engineering, Buein Zahra Technical University, Buein Zahra 34517-45346, Iran
| | - Hassan Ghafoorifard
- Department of Electrical Engineering, Amirkabir University of Technology, 424 Hafez Ave., Tehran 15914, Iran
| | - Mohammad Taghi Ahmadi
- Device Modelling Group, School of Engineering, University of Warwick, Coventry CV4 7AL, UK
- Nanotechnology Research Center, Nano-Physic Group, Physics Department, Urmia University, Urmia 57147, Iran
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30
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Vaghasiya JV, Mayorga-Martinez CC, Vyskočil J, Pumera M. Black phosphorous-based human-machine communication interface. Nat Commun 2023; 14:2. [PMID: 36596775 PMCID: PMC9810665 DOI: 10.1038/s41467-022-34482-4] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 10/26/2022] [Indexed: 01/04/2023] Open
Abstract
Assistive technology involving auditory feedback is generally utilized by those who are visually impaired or have speech and language difficulties. Therefore, here we concentrate on an auditory human-machine interface that uses audio as a platform for conveying information between visually or speech-disabled users and society. We develop a piezoresistive tactile sensor based on a black phosphorous and polyaniline (BP@PANI) composite by the facile chemical oxidative polymerization of aniline on cotton fabric. Taking advantage of BP's puckered honeycomb lattice structure and superior electrical properties as well as the vast wavy fabric surface, this BP@PANI-based tactile sensor exhibits excellent sensitivity, low-pressure sensitivity, reasonable response time, and good cycle stability. For a real-world application, a prototype device employs six BP@PANI tactile sensors that correspond to braille characters and can convert pressed text into audio on reading or typing to assist visually or speech-disabled persons. Overall, this research offers promising insight into the material candidates and strategies for the development of auditory feedback devices based on layered and 2D materials for human-machine interfaces.
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Affiliation(s)
- Jayraj V Vaghasiya
- Center for Advanced Functional Nanorobots, Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 166 28, Prague, Czech Republic
| | - Carmen C Mayorga-Martinez
- Center for Advanced Functional Nanorobots, Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 166 28, Prague, Czech Republic
| | - Jan Vyskočil
- Center for Advanced Functional Nanorobots, Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 166 28, Prague, Czech Republic
| | - Martin Pumera
- Center for Advanced Functional Nanorobots, Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 166 28, Prague, Czech Republic. .,Department of Chemical and Biomolecular Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-Gu, Seoul, 03722, Korea. .,Faculty of Electrical Engineering and Computer Science, VSB-Technical University of Ostrava, 17. listopadu 2172/15, 70800, Ostrava, Czech Republic. .,Department of Medical Research, China Medical University Hospital, China Medical University, No. 91 Hsueh-Shih Road, Taichung, 40402, Taiwan.
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31
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Liu X, Guo H, Wang J, Huang Q, Chen X, Bao J, Yu J. A first-principles study of the adsorption mechanism of NO 2 on monolayer antimonide phosphide: a highly sensitive and selective gas sensor. NEW J CHEM 2023. [DOI: 10.1039/d2nj05553h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
A NO2/SbP adsorption system with high adsorption energy (−0.876 eV) and charge transfer value (−0.83 e) is reported.
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Affiliation(s)
- Xiaodong Liu
- Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Haojie Guo
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing, China
| | - Jia Wang
- College of Architectural Engineering, Shanxi Institute of Applied Science and Technology, Taiyuan 030031, China
| | - Qing Huang
- Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Xianping Chen
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing, China
| | - Jiading Bao
- Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Jiabing Yu
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing, China
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32
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Xu S, Yang C, Tian Y, Lu J, Jiang Y, Guo H, Zhao J, Peng H. Exploitation of Schottky-Junction-based Sensors for Specifically Detecting ppt-Concentration Gases. ACS Sens 2022; 7:3764-3772. [PMID: 36480642 DOI: 10.1021/acssensors.2c01591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Gas species and concentrations of human-exhaled breath correlate with health, wherein disease markers contain volatile organic compounds (VOCs) of concentrations in parts per billion. It is expected that a gas-sensing strategy possesses a gas specificity and detection limit in the parts per trillion (ppt) range; however, it is still a challenge. This investigation has exploited the Schottky junction of gas sensors for detecting the reactance signal of ppt VOC, aiming for a specific and rapid detection toward disease marker acetone. In this new sensing paradigm, formed by the engineered energy band between metal-semiconductor contact, the Schottky junction is accessed to specific modulation of different adsorbate dopings and the corresponding reactance signal is measured. Regarding the detection toward ppt concentration of acetone, this sensing paradigm possesses rapid (∼100 s) and room-temperature response, molecular specificity, and 34 ppt of detection limit. The proposed detection paradigm is demonstrated to show a high feasibility toward detection of disease marker acetone.
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Affiliation(s)
- Shipu Xu
- Songshan Lake Materials Laboratory, Dongguan523808, P. R. China
| | - Chen Yang
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing100871, P. R. China
| | - Ye Tian
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, P. R. China
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing100871, P. R. China
| | - Ying Jiang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, P. R. China.,Collaborative Innovation Center of Quantum Matter, Beijing100871, P. R. China.,Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing100871, P. R. China
| | - Hanjie Guo
- Songshan Lake Materials Laboratory, Dongguan523808, P. R. China
| | - Jinkui Zhao
- Songshan Lake Materials Laboratory, Dongguan523808, P. R. China.,The Institute of Physics, Chinese Academy of Sciences, Beijing100190, P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing100871, P. R. China
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33
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Tang Y, Zhao Y, Liu H. Room-Temperature Semiconductor Gas Sensors: Challenges and Opportunities. ACS Sens 2022; 7:3582-3597. [PMID: 36399520 DOI: 10.1021/acssensors.2c01142] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Abstract
Our demand for ubiquitous and reliable gas detection is spurring the design of intelligent and enabling gas sensors for the next-generation Internet of Things and Artificial Intelligence. The desire to introduce gas sensors everywhere is fueled by opportunities to create room-temperature semiconductor gas sensors with ultralow power consumption. In this Perspective, we provide an overview of the recent achievement of room-temperature gas sensors that have been translated from the advances in the design of the chemical and physical properties of low-dimensional semiconductor nanomaterials. The emergence of solution-processable nanomaterials opens up remarkable opportunities to integrate into high-performance and flexible room-temperature gas sensors by using low-temperature, large-area, solution-based methods instead of costly, high-vacuum, high-temperature device manufacturing processes. We review the fundamental factors which affect the receptor and transducer functions of semiconductor gas sensors. We also discuss challenges that must be addressed in the move to the continuous miniaturization and evolution of semiconductor gas sensors.
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Affiliation(s)
- Yanting Tang
- School of Optical and Electronic Information, School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074, China
| | - Yunong Zhao
- School of Optical and Electronic Information, School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074, China
| | - Huan Liu
- School of Optical and Electronic Information, School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074, China
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34
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Jyothi MS, Nagarajan V, Chandiramouli R. M-cymene and m-xylene adsorption studies on hex-star arsenene nanosheets – a DFT investigation. Mol Phys 2022. [DOI: 10.1080/00268976.2022.2140082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Affiliation(s)
- M. S. Jyothi
- Department of Chemistry, AMC Engineering College, Bengaluru, India
| | - V. Nagarajan
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, India
| | - R. Chandiramouli
- School of Electrical & Electronics Engineering, SASTRA Deemed University, Tirumalaisamudram, India
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35
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2D Materials towards sensing technology: From fundamentals to applications. SENSING AND BIO-SENSING RESEARCH 2022. [DOI: 10.1016/j.sbsr.2022.100540] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 11/06/2022] Open
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36
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Song Z, Zeng J, Zi B, Chen F, Zhang Y, Zhang G, Zhu Z, Zhang J, Liu Q. Highly sensitive triethylamine gas sensor by Pt-loaded p-n heterojunction Co 3O 4/WO 3. NANOTECHNOLOGY 2022; 34:045501. [PMID: 36265415 DOI: 10.1088/1361-6528/ac9c08] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2022] [Accepted: 10/20/2022] [Indexed: 06/16/2023]
Abstract
Triethylamine (TEA) exists widely in production and life and is extremely volatile, which seriously endangers human health. It is required to develop high-performance TEA sensors to protect human health. We fabricated Pt-Co3O4/WO3based on our previous work, and the performance was tested against volatile organic compounds. Compared with the previous work, its operating temperature was greatly reduced from 240 °C to 180 °C. The response value of Pt-Co3O4/WO3was increased from 1101 to 1532 for 10 ppm TEA with good selectivity. These results show a significant step toward practical use of the Pt-Co3O4/WO3sensor.
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Affiliation(s)
- Zhenlin Song
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Jiyang Zeng
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Baoye Zi
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Fengying Chen
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Yumin Zhang
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Genlin Zhang
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Zhongqi Zhu
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Jin Zhang
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Qingju Liu
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
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37
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Sensing properties of acetone gas on the two-dimensional orthorhombic diboron dinitride sheet: A DFT Investigation. COMPUT THEOR CHEM 2022. [DOI: 10.1016/j.comptc.2022.113935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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38
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First-principles calculations to investigate electronic structures and magnetic regulation of non-metallic elements doped BP with point defects. J Mol Graph Model 2022; 118:108370. [DOI: 10.1016/j.jmgm.2022.108370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 10/28/2022] [Accepted: 11/01/2022] [Indexed: 11/06/2022]
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The Photoluminescence and Vibrational Properties of Black Phosphorous Sheets Chemically/Electrochemically Functionalized in the Presence of Diphenylamine. Polymers (Basel) 2022; 14:polym14214479. [PMID: 36365473 PMCID: PMC9657133 DOI: 10.3390/polym14214479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2022] [Revised: 10/12/2022] [Accepted: 10/12/2022] [Indexed: 11/30/2022] Open
Abstract
In this work, new information concerning the optical properties of black phosphorus (BP) sheets chemically/electrochemically functionalized with diphenyl amine (DPA) and its macromolecular compound (poly(diphenylamine) (PDPA)) in the absence/presence of phosphotungstic acid (PTA) is reported. Raman scattering and FTIR spectroscopy studies indicate that the interaction of BP with PTA leads to the elimination of the PxOy layer onto the surface of the BP sheets. In the case of the chemical interaction of BP with DPA, the reaction product corresponds to DPA chemically functionalized BP sheets having an imino-phosphorane (IP) structure. The electrochemical oxidation of BP sheets chemically functionalized with DPA in the presence of PTA leads to an increase in the weight of P-N bonds as a consequence of the generation of PDPA doped with the PTA heteropolyanions, as shown by FTIR spectroscopy and Raman scattering. This process is evidenced by a shift of the Raman line from 362 cm-1 to 378 cm-1, assigned to the A1g mode. This change was explained by taking into account the compression of the layers containing P atoms, which is induced by PDPA macromolecular chains. The decrease in the intensity of the PL spectra of DPA as well as PDPA, in the presence of BP, indicates that BP acts as a PL quenching agent for these compounds. A preferential orientation of the PDPA doped with the PTA heteropolyanions on the surface of BP sheets is highlighted by the variation of the binding angle of the PDPA on the surface of BP sheets from 44.7° to 39.9°.
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40
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Liu X, Li J, Guo L, Wang G. Highly Sensitive Acetone Gas Sensors Based on Erbium-Doped Bismuth Ferrite Nanoparticles. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3679. [PMID: 36296869 PMCID: PMC9608478 DOI: 10.3390/nano12203679] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 10/17/2022] [Accepted: 10/17/2022] [Indexed: 06/16/2023]
Abstract
The acetone-sensing performance of BiFeO3 is related to structural phase transformation, morphology and band gap energy which can be modulated by rare-earth ions doping. In this work, Bi1-xErxFeO3 nanoparticles with different amounts of Er doping were synthesized via the sol-gel method. The mechanism of Er doping on acetone-sensing performance of Bi1-xErxFeO3 (x = 0, 0.05, 0.1 and 0.2) sensors was the focus of the research. The optimal working temperature of Bi0.9Er0.1FeO3 (300 °C) was decreased by 60 °C compared to BiFeO3 (360 °C). The Bi0.9Er0.1FeO3 sample demonstrated the optimal response to 100 ppm acetone (43.2), which was 4.8 times that of pure BFO at 300 °C. The primary reason, which enhances the acetone-sensing performance, could be the phase transformation induced by Er doping. The lattice distortions induced by phase transformation are favorable to increasing the carrier concentration and mobility, which will bring more changes to the hole-accumulation layer. Thus, the acetone-sensing performance of Bi0.9Er0.1FeO3 was improved.
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Affiliation(s)
- Xiaolian Liu
- Correspondence: (X.L.); (G.W.); Tel.: +86-13290706609 (X.L.)
| | | | | | - Guodong Wang
- Correspondence: (X.L.); (G.W.); Tel.: +86-13290706609 (X.L.)
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41
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Kesorn A, Hunkao R, Tivakornsasithorn K, Sinsarp A, Sukkabot W, Suwanna S. Dynamical Behavior of Two Interacting Double Quantum Dots in 2D Materials for Feasibility of Controlled-NOT Operation. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3599. [PMID: 36296789 PMCID: PMC9610695 DOI: 10.3390/nano12203599] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/25/2022] [Revised: 10/07/2022] [Accepted: 10/09/2022] [Indexed: 06/16/2023]
Abstract
Two interacting double quantum dots (DQDs) can be suitable candidates for operation in the applications of quantum information processing and computation. In this work, DQDs are modeled by the heterostructure of two-dimensional (2D) MoS2 having 1T-phase embedded in 2H-phase with the aim to investigate the feasibility of controlled-NOT (CNOT) gate operation with the Coulomb interaction. The Hamiltonian of the system is constructed by two models, namely the 2D electronic potential model and the 4×4 matrix model whose matrix elements are computed from the approximated two-level systems interaction. The dynamics of states are carried out by the Crank-Nicolson method in the potential model and by the fourth order Runge-Kutta method in the matrix model. Model parameters are analyzed to optimize the CNOT operation feasibility and fidelity, and investigate the behaviors of DQDs in different regimes. Results from both models are in excellent agreement, indicating that the constructed matrix model can be used to simulate dynamical behaviors of two interacting DQDs with lower computational resources. For CNOT operation, the two DQD systems with the Coulomb interaction are feasible, though optimization of engineering parameters is needed to achieve optimal fidelity.
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Affiliation(s)
- Aniwat Kesorn
- Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand
| | - Rutchapon Hunkao
- Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand
| | - Kritsanu Tivakornsasithorn
- Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand
| | - Asawin Sinsarp
- Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand
| | - Worasak Sukkabot
- Department of Physics, Faculty of Science, Ubon Ratchathani University, Ubon Ratchathani 34190, Thailand
| | - Sujin Suwanna
- Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand
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42
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Panigrahi P, Pal Y, Panigrahi A, Bae H, Lee H, Ahuja R, Hussain T. Efficient Sensing of Selected Amino Acids as Biomarker by Green Phosphorene Monolayers: Smart Diagnosis of Viruses. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202200357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Puspamitra Panigrahi
- Centre for Clean Energy and Nano Convergence Hindustan Institute of Technology and Science Chennai Tamilnadu 603103 India
| | - Yash Pal
- School of Aeronautical Sciences Hindustan Institute of Technology and Science Chennai Tamilnadu 603103 India
| | - Akshaya Panigrahi
- Central Institute of Brackishwater Aquaculture (ICAR‐CIBA) 75 Santhome High Road Chennai Tamilnadu 600028 India
| | - Hyeonhu Bae
- Department of Physics Konkuk University 9 Seoul 0502 Republic of Korea
| | - Hoonkyung Lee
- Department of Physics Konkuk University 9 Seoul 0502 Republic of Korea
| | - Rajeev Ahuja
- Condensed Matter Theory Group Department of Physics and Astronomy Uppsala University Box 516 Uppsala S‐75120 Sweden
- Department of Physics Indian Institute of Technology Ropar Rupnagar Punjab 140001 India
| | - Tanveer Hussain
- School of Chemical Engineering The University of Queensland Queensland St Lucia Brisbane 4072 Australia
- School of Science and Technology University of New England Armidale New South Wales 2351 Australia
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43
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Liu Z, Wang H, Cao H, Xie D, Li C, Yang H, Yao W, Cheetham AK. Ultratough Hydrogen-Bond-Bridged Phosphorene Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203332. [PMID: 35929459 DOI: 10.1002/adma.202203332] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2022] [Revised: 07/31/2022] [Indexed: 06/15/2023]
Abstract
The rapid development of flexible electronic devices, especially based on 2D materials, has triggered the demand for high-strength materials. Mono- or few-layer phosphorene with excellent electronic properties has attracted extensive attention. However, phosphorene is affected by its low Young's modulus when applied to flexible electronic devices. Here, a strategy via ion intercalation to significantly improve the mechanical properties of black phosphorus to generate hydrogen-bond-bridged phosphorene films with Young's modulus as high as 316 GPa is reported. This value is several times larger than the theoretical values of 166 GPa in the zigzag direction, 44 GPa in the armchair direction, and the averaged Young's modulus among all directions of 94 GPa. The impact of intercalation on mechanical properties is also explored. Experimental nanoindentation results obtained by atomic force microscopy indicate that the relationship between the ratio of intercalated ions to phosphorus atoms and the corresponding Young's modulus satisfies the formula E = e a e - [ ln ( x ) + b ] 2 c ( 0 < x ≤ 1.80 ) \[E{\bm{ = }}{e^{a{e^{\frac{{{\bm{ - }}{{[\ln (x){\bm{ + }}b]}^2}}}{c}}}}}(0{\bm{ < }}x{\bm{ \le }}1.80)\] . Furthermore, a flexible NO2 gas sensor device based on this ultratough material presents excellent performance, even after 10 000 bending cycles. The results provide new insight into the potential for practical applications of black phosphorus devices.
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Affiliation(s)
- Zhifang Liu
- Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Huaipeng Wang
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Huaqiang Cao
- Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Dan Xie
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Chun Li
- Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Haijun Yang
- Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Wenqing Yao
- Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Anthony K Cheetham
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK
- Materials Research Laboratory, University of California, Santa Barbara, CA, 93106, USA
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117576, Singapore
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44
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Jiang X, Zhang G, Yi W, Yang T, Liu X. Penta-BeP 2 Monolayer: A Superior Sensor for Detecting Toxic Gases in the Air with Excellent Sensitivity, Selectivity, and Reversibility. ACS APPLIED MATERIALS & INTERFACES 2022; 14:35229-35236. [PMID: 35876712 DOI: 10.1021/acsami.2c07482] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Directly and quickly detecting toxic gases in the air is urgently needed in industrial production and our daily life. However, the poor gas selectivity and low sensitivity under ambient conditions limit the development of gas sensors. In this work, we demonstrate that the penta-BeP2 monolayer is an excellent toxic gas sensor by using first-principles calculations. The calculated results show that the semiconducting penta-BeP2 monolayer can chemisorb toxic gas molecules (including CO, NH3, NO, and NO2) with distinct charge transfer (-0.182 to 1.129 e) but negligibly interact with ambient gas molecules (including H2, N2, H2O, O2, and CO2), indicating high gas selectivity for primary environmental gases. The calculated I-V curves show that the penta-BeP2 monolayer exhibits a fast response with toxic gas molecules. Upon interaction with CO, NH3, NO, and NO2 molecules at a bias voltage of 0.7 V, the currents are 10.23, 14.48, 32.10, and 129.90 times that of the pristine penta-BeP2 monolayer, respectively, which induces high sensitivity values of 9.23, 13.48, 31.10, and 128.90, respectively. Moreover, the moderate adsorption energies of all toxic gas molecules guarantee that the penta-BeP2 monolayer possesses good reversibility at room temperature with a short recovery time. Herein, all of our results indicate that the penta-BeP2 monolayer could be a superior candidate for sensing toxic gases with high selectivity, sensitivity, and reversibility.
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Affiliation(s)
- Xingang Jiang
- Laboratory of High Pressure Physics and Material Science (HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong 273165, China
| | - Guanghui Zhang
- Laboratory of High Pressure Physics and Material Science (HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong 273165, China
| | - Wencai Yi
- Laboratory of High Pressure Physics and Material Science (HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong 273165, China
- Advanced Research Institute of Multidisciplinary Science, Qufu Normal University, Qufu, Shandong 273165, China
| | - Tao Yang
- Laboratory of High Pressure Physics and Material Science (HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong 273165, China
- Institute of Advanced Materials, School of Electromechanical and Automobile Engineering, Huanggang Normal University, Huanggang, Hubei 438000, China
| | - Xiaobing Liu
- Laboratory of High Pressure Physics and Material Science (HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong 273165, China
- Advanced Research Institute of Multidisciplinary Science, Qufu Normal University, Qufu, Shandong 273165, China
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45
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SF6 and SOF2 interaction studies on novel Tricycle Red Phosphorene sheets based on first-principles studies. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139674] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
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46
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Choi J, Chacon B, Park H, Hantanasirisakul K, Kim T, Shevchuk K, Lee J, Kang H, Cho SY, Kim J, Gogotsi Y, Kim SJ, Jung HT. N-p-Conductor Transition of Gas Sensing Behaviors in Mo 2CT x MXene. ACS Sens 2022; 7:2225-2234. [PMID: 35838305 DOI: 10.1021/acssensors.2c00658] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
It is highly important to implement various semiconducting, such as n- or p-type, or conducting types of sensing behaviors to maximize the selectivity of gas sensors. To achieve this, researchers so far have utilized the n-p (or p-n) two-phase transition using doping techniques, where the addition of an extra transition phase provides the potential to greatly increase the sensing performance. Here, we report for the first time on an n-p-conductor three-phase transition of gas sensing behavior using Mo2CTx MXene, where the presence of organic intercalants and film thickness play a critical role. We found that 5-nm-thick Mo2CTx films with a tetramethylammonium hydroxide (TMAOH) intercalant displayed a p-type gas sensing response, while the films without the intercalant displayed a clear n-type response. Additionally, Mo2CTx films with thicknesses over 700 nm exhibited a conductor-type response, unlike the thinner films. It is expected that the three-phase transition was possible due to the unique and simultaneous presence of the intrinsic metallic conductivity and the high-density of surface functional groups of the MXene. We demonstrate that the gas response of Mo2CTx films containing tetramethylammonium (TMA) ions toward volatile organic compounds (VOCs), NH3, and NO2 is ∼30 times higher than that of deintercalated films, further showing the influence of intercalants on sensing performance. Also, DFT calculations show that the adsorption energy of NH3 and NO2 on Mo2CTx shifts from -0.973, -1.838 eV to -1.305, -2.750 eV, respectively, after TMA adsorption, demonstrating the influence of TMA in enhancing sensing performance.
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Affiliation(s)
- Junghoon Choi
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Benjamin Chacon
- A. J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia PA 19104, United States
| | - Hyunsoo Park
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Kanit Hantanasirisakul
- A. J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia PA 19104, United States
| | - Taewoo Kim
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Kateryna Shevchuk
- A. J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia PA 19104, United States
| | - Juyun Lee
- Materials Architecturing Research Center, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea.,Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Hohyung Kang
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Soo-Yeon Cho
- School of Chemical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Suwon 16419, Republic of Korea
| | - Jihan Kim
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Yury Gogotsi
- A. J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia PA 19104, United States
| | - Seon Joon Kim
- Division of Nanoscience and Technology, KIST School, University of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea.,Materials Architecturing Research Center and Convergence Research Center for Solutions to Electromagnetic Interference for Future-Mobility, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea
| | - Hee-Tae Jung
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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47
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Lv H, Chu L, Wang S, Sun S, Sun X, Jia Y, Chen F. Layer-dependent nonlinear optical properties of two-dimensional InSe and its applications in waveguide lasers. OPTICS EXPRESS 2022; 30:23986-23999. [PMID: 36225069 DOI: 10.1364/oe.462811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2022] [Accepted: 06/06/2022] [Indexed: 06/16/2023]
Abstract
The thickness-dependent third-order nonlinear optical properties of two-dimensional β-InSe and its potential applications as a saturable absorber in pulsed laser generation are investigated. InSe sheets with different layers are prepared by the chemical vapor deposition. Using open-aperture femtosecond Z-scan technique at 1030 nm, the modulation depth and nonlinear absorption coefficient are obtained to be 36% and -1.6 × 104 cm·GW-1, respectively. The intrinsic mechanism of the layer-dependent energy band structure evolution is analyzed based on density functional theory, and the theoretical analysis is consistent with the experimental results. Based on a waveguide cavity, a Q-switched mode-locked laser at 1 µm with a repetition frequency of 8.51 GHz and a pulse duration of 28 ps is achieved by utilizing the layered InSe as a saturable absorber. This work provides an in-depth understanding of layer-dependent properties of InSe and extends its applications in laser technology for compact light devices.
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48
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Chekusova VP, Trul AA, Agina EV, Ponomarenko SA. A universal approach to a structured polymer substrate for manufacturing a printed polymer gas sensor based on a field effect transistor. Russ Chem Bull 2022. [DOI: 10.1007/s11172-022-3533-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
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49
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Choi HK, Park J, Gwon OH, Kim JY, Kang SJ, Byun HR, Shin B, Jang SG, Kim HS, Yu YJ. Gate-Tuned Gas Molecule Sensitivity of a Two-Dimensional Semiconductor. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23617-23623. [PMID: 35549073 DOI: 10.1021/acsami.2c02380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In this work, we develop a gate-tunable gas sensor based on a MoS2/hBN heterostructure field effect transistor. Through experimental measurements and numerical simulations, we systematically reveal a principle that relates the concentration of the target gas and sensing signals (ΔI/I0) as a function of gate bias. Because a linear relationship between ΔI/I0 and the gas concentration guarantees reliable sensor operation, the optimal gate bias condition for linearity was investigated. Taking NO2 and NH3 as target molecules, it is clarified that the bias condition greatly depends on the electron accepting/donating nature of the gas. The effects of the bandgap and polarity of the transition metal dichalcogenides (TMDC) channel are also discussed. In order to achieve linearly increasing signals that are stable with respect to the gas concentration, a sufficiently large VBG within VBG > 0 is required. We expect this work will shed light on a way to precisely design reliable semiconducting gas sensors based on the characteristics of TMDC and target gas molecules.
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Affiliation(s)
- Hong Kyw Choi
- Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea
| | - Jaesung Park
- Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Korea
| | - Oh Hun Gwon
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - Jong Yun Kim
- Institute of Quantum Systems, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - Seok-Ju Kang
- Institute of Quantum Systems, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - Hye Ryung Byun
- Institute of Quantum Systems, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - BeomKyu Shin
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - Seo Gyun Jang
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
| | - Han Seul Kim
- Center for Supercomputing Applications, National Institute of Supercomputing and Networking, Korea Institute of Science and Technology Information (KISTI), Daejeon 34141, Korea
| | - Young-Jun Yu
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
- Institute of Quantum Systems, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea
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50
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Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 51] [Impact Index Per Article: 25.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
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Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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