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Sharma DK, Agreda A, Dell'Ova F, Malchow K, Colas des Francs G, Dujardin E, Bouhelier A. Memristive Control of Plasmon-Mediated Nonlinear Photoluminescence in Au Nanowires. ACS NANO 2024. [PMID: 38829860 DOI: 10.1021/acsnano.4c03276] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
Nonlinear photoluminescence (N-PL) is a broadband photon emission arising from a nonequilibrium heated electron distribution generated at the surface of metallic nanostructures by ultrafast pulsed laser illumination. N-PL is sensitive to surface morphology, local electromagnetic field strength, and electronic band structure, making it relevant to probe optically excited nanoscale plasmonic systems. It also has been key to accessing the complex multiscale time dynamics ruling electron thermalization. Here, we show that plasmon-mediated N-PL emitted by a gold nanowire can be modified by an electrical architecture featuring a nanogap. Upon voltage activation, we observe that N-PL becomes dependent on the electrical transport dynamics and can thus be locally modulated. This finding brings an electrical leverage to externally control the photoluminescence generated from metal nanostructures and constitutes an asset for the development of emerging nanoscale interface devices managing photons and electrons.
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Affiliation(s)
- Deepak K Sharma
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Adrian Agreda
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Florian Dell'Ova
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Konstantin Malchow
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Gérard Colas des Francs
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Erik Dujardin
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
| | - Alexandre Bouhelier
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne, 9 Avenue Alain Savary, 21000 Dijon, France
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2
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Paissan F, Lecca M, Passerone R, Farella E, Gottardi M. HDR vision sensor with neuro-memristive skin detection for edge computing. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA. A, OPTICS, IMAGE SCIENCE, AND VISION 2024; 41:1009-1018. [PMID: 38856408 DOI: 10.1364/josaa.516912] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Accepted: 04/12/2024] [Indexed: 06/11/2024]
Abstract
Human skin classification is an essential task for several machine vision applications such as human-machine interfaces, people/object tracking, and classification. In this paper, we describe a hybrid CMOS/memristor vision sensor architecture embedding skin detection over a wide dynamic range. In-sensor RGB to r g-chromaticity color-space conversion is executed on-the-fly through a pixel-level automatic exposure time control. Each pixel of the array delivers two pre-filtered analog signals, the r and g values, suitable for being efficiently classified as skin or non-skin through an analog memristive neural network (NN), without the need for any further signal processing. Moreover, we study the NN performance and theorize how it should be added in the hardware. The skin classifier is organized in an array of column-level memristor-based NN to exploit the nano-scale device characteristics and non-volatile analog memory capabilities, making the proposed sensor architecture highly flexible, customizable for various use-case scenarios, and low-power. The output is a skin bitmap that is robust against variations of the illuminant color and intensity.
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3
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Yang R, Mei L, Lin Z, Fan Y, Lim J, Guo J, Liu Y, Shin HS, Voiry D, Lu Q, Li J, Zeng Z. Intercalation in 2D materials and in situ studies. Nat Rev Chem 2024; 8:410-432. [PMID: 38755296 DOI: 10.1038/s41570-024-00605-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 04/11/2024] [Indexed: 05/18/2024]
Abstract
Intercalation of atoms, ions and molecules is a powerful tool for altering or tuning the properties - interlayer interactions, in-plane bonding configurations, Fermi-level energies, electronic band structures and spin-orbit coupling - of 2D materials. Intercalation can induce property changes in materials related to photonics, electronics, optoelectronics, thermoelectricity, magnetism, catalysis and energy storage, unlocking or improving the potential of 2D materials in present and future applications. In situ imaging and spectroscopy technologies are used to visualize and trace intercalation processes. These techniques provide the opportunity for deciphering important and often elusive intercalation dynamics, chemomechanics and mechanisms, such as the intercalation pathways, reversibility, uniformity and speed. In this Review, we discuss intercalation in 2D materials, beginning with a brief introduction of the intercalation strategies, then we look into the atomic and intrinsic effects of intercalation, followed by an overview of their in situ studies, and finally provide our outlook.
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Affiliation(s)
- Ruijie Yang
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada
| | - Liang Mei
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China
| | - Yingying Fan
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada
| | - Jongwoo Lim
- Department of Chemistry, Seoul National University, Seoul, Republic of Korea
| | - Jinghua Guo
- Advanced Light Source, Energy Storage and Distributed Resources Division, and Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Yijin Liu
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, USA
| | - Hyeon Suk Shin
- Center for 2D Quantum Heterostructures, Institute for Basic Science, and Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Damien Voiry
- Institut Européen des Membranes, IEM, UMR, Université Montpellier, ENSCM, CNRS, Montpellier, France
| | - Qingye Lu
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada.
| | - Ju Li
- Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Zhiyuan Zeng
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China.
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China.
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4
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Wang J, Ren Y, Yang Z, Lv Q, Zhang Y, Zhang M, Zhao T, Gu D, Liu F, Tang B, Yang W, Lin Z. Synergistically Modulating Conductive Filaments in Ion-Based Memristors for Enhanced Analog In-Memory Computing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309538. [PMID: 38491732 PMCID: PMC11165545 DOI: 10.1002/advs.202309538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Revised: 02/05/2024] [Indexed: 03/18/2024]
Abstract
Memristors offer a promising solution to address the performance and energy challenges faced by conventional von Neumann computer systems. Yet, stochastic ion migration in conductive filament often leads to an undesired performance tradeoff between memory window, retention, and endurance. Herein, a robust memristor based on oxygen-rich SnO2 nanoflowers switching medium, enabled by seed-mediated wet chemistry, to overcome the ion migration issue for enhanced analog in-memory computing is reported. Notably, the interplay between the oxygen vacancy (Vo) and Ag ions (Ag+) in the Ag/SnO2/p++-Si memristor can efficiently modulate the formation and abruption of conductive filaments, thereby resulting in a high on/off ratio (>106), long memory retention (10-year extrapolation), and low switching variability (SV = 6.85%). Multiple synaptic functions, such as paired-pulse facilitation, long-term potentiation/depression, and spike-time dependent plasticity, are demonstrated. Finally, facilitated by the symmetric analog weight updating and multiple conductance states, a high image recognition accuracy of ≥ 91.39% is achieved, substantiating its feasibility for analog in-memory computing. This study highlights the significance of synergistically modulating conductive filaments in optimizing performance trade-offs, balancing memory window, retention, and endurance, which demonstrates techniques for regulating ion migration, rendering them a promising approach for enabling cutting-edge neuromorphic applications.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731P. R. China
- Department of Electrical and Computer EngineeringNational University of SingaporeSingapore117576Singapore
| | - Yujing Ren
- Department of Chemical and Biomolecular EngineeringNational University of SingaporeSingapore117585Singapore
| | - Ze Yang
- Department of Microelectronics and Integrated CircuitSchool of Electronic Science and EngineeringXiamen UniversityXiamen361005P. R. China
| | - Qiaoya Lv
- Department of Electrical and Computer EngineeringNational University of SingaporeSingapore117576Singapore
| | - Yu Zhang
- Department of Electronic Science and TechnologyHarbin Institute of TechnologyHarbin150001P. R. China
| | - Mingyue Zhang
- Department of Chemical and Biomolecular EngineeringNational University of SingaporeSingapore117585Singapore
| | - Tiancheng Zhao
- School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731P. R. China
| | - Deen Gu
- School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731P. R. China
| | - Baoshan Tang
- Department of Electrical and Computer EngineeringNational University of SingaporeSingapore117576Singapore
| | - Weifeng Yang
- Department of Microelectronics and Integrated CircuitSchool of Electronic Science and EngineeringXiamen UniversityXiamen361005P. R. China
| | - Zhiqun Lin
- Department of Chemical and Biomolecular EngineeringNational University of SingaporeSingapore117585Singapore
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Shin D, Ievlev AV, Beckmann K, Li J, Ren P, Cady N, Li Y. Oxygen tracer diffusion in amorphous hafnia films for resistive memory. MATERIALS HORIZONS 2024; 11:2372-2381. [PMID: 38506727 DOI: 10.1039/d3mh02113k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/21/2024]
Abstract
The oxygen diffusion rate in hafnia (HfO2)-based resistive memory plays a pivotal role in enabling nonvolatile data retention. However, the information retention times obtained in HfO2 resistive memory devices are many times higher than the expected values obtained from oxygen diffusion measurements in HfO2 materials. In this study, we resolve this discrepancy by conducting oxygen isotope tracer diffusion measurements in amorphous hafnia (a-HfO2) thin films. Our results show that the oxygen tracer diffusion in amorphous HfO2 films is orders of magnitude lower than that of previous measurements on monoclinic hafnia (m-HfO2) pellets. Moreover, oxygen tracer diffusion is much lower in denser a-HfO2 films deposited by atomic layer deposition (ALD) than in less dense a-HfO2 films deposited by sputtering. The ALD films yield similar oxygen diffusion times as experimentally measured device retention times, reconciling this discrepancy between oxygen diffusion and retention time measurements. More broadly, our work shows how processing conditions can be used to control oxygen transport characteristics in amorphous materials without long-range crystal order.
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Affiliation(s)
- Dongjae Shin
- Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
| | - Anton V Ievlev
- Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Karsten Beckmann
- College of Nanotechnology, Science and Engineering, University at Albany, Albany, NY, USA
- NY CREATES, Albany, NY, USA
| | - Jingxian Li
- Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
| | - Pengyu Ren
- Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
| | - Nathaniel Cady
- College of Nanotechnology, Science and Engineering, University at Albany, Albany, NY, USA
| | - Yiyang Li
- Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA.
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6
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Zhang L, Lorut F, Gruel K, Hÿtch MJ, Gatel C. Measuring Electrical Resistivity at the Nanoscale in Phase-Change Materials. NANO LETTERS 2024; 24:5913-5919. [PMID: 38710045 DOI: 10.1021/acs.nanolett.4c01462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
Electrical resistivity is the key parameter in the active regions of many current nanoscale devices, from memristors to resistive random-access memory and phase-change memories. The local resistivity of the materials is engineered on the nanoscale to fit the performance requirements. Phase-change memories, for example, rely on materials whose electrical resistance increases dramatically with a change from a crystalline to an amorphous phase. Electrical characterization methods have been developed to measure the response of individual devices, but they cannot map the local resistance across the active area. Here, we propose a method based on operando electron holography to determine the local resistance within working devices. Upon switching the device, we show that electrical resistance is inhomogeneous on the scale of only a few nanometers.
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Affiliation(s)
- Leifeng Zhang
- CEMES-CNRS, Université Paul Sabatier, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - Frédéric Lorut
- STMicroelectronics, 820 rue Jean Monnet, 38920 Crolles, France
| | - Kilian Gruel
- CEMES-CNRS, Université Paul Sabatier, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - Martin J Hÿtch
- CEMES-CNRS, Université Paul Sabatier, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - Christophe Gatel
- CEMES-CNRS, Université Paul Sabatier, 29 rue Jeanne Marvig, 31055 Toulouse, France
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7
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Tao Y, Liu H, Kong HY, Bian XY, Yao BW, Li YJ, Gu C, Ding X, Sun L, Han BH. Resistive Memristors Using Robust Electropolymerized Porous Organic Polymer Films as Switchable Materials. J Am Chem Soc 2024. [PMID: 38728652 DOI: 10.1021/jacs.4c02960] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/12/2024]
Abstract
Porous organic polymers (POPs) with inherent porosity, tunable pore environment, and semiconductive property are ideally suitable for application in various advanced semiconductor-related devices. However, owing to the lack of processability, POPs are usually prepared in powder forms, which limits their application in advanced devices. Herein, we demonstrate an example of information storage application of POPs with film form prepared by an electrochemical method. The growth process of the electropolymerized films in accordance with the Volmer-Weber model was proposed by observation of atomic force microscopy. Given the mechanism of the electron transfer system, we verified and mainly emphasized the importance of porosity and interfacial properties of porous polymer films for memristor. As expected, the as-fabricated memristors exhibit good performance on low turn-on voltage (0.65 ± 0.10 V), reliable data storage, and high on/off current ratio (104). This work offers inspiration for applying POPs in the form of electropolymerized films in various advanced semiconductor-related devices.
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Affiliation(s)
- You Tao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hui Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hui-Yuan Kong
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xin-Yue Bian
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bin-Wei Yao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Yong Jun Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- The GBA National Institute for Nanotechnology Innovation, Guangdong 510700, China
| | - Cheng Gu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, China
| | - Xuesong Ding
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Lianfeng Sun
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- The GBA National Institute for Nanotechnology Innovation, Guangdong 510700, China
| | - Bao-Hang Han
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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8
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Bisquert J, Roldán JB, Miranda E. Hysteresis in memristors produces conduction inductance and conduction capacitance effects. Phys Chem Chem Phys 2024; 26:13804-13813. [PMID: 38655741 PMCID: PMC11078199 DOI: 10.1039/d4cp00586d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/08/2024] [Accepted: 04/15/2024] [Indexed: 04/26/2024]
Abstract
Memristors are devices in which the conductance state can be alternately switched between a high and a low value by means of a voltage scan. In general, systems involving a chemical inductor mechanism as solar cells, asymmetric nanopores in electrochemical cells, transistors, and solid state memristive devices, exhibit a current increase and decrease over time that generates hysteresis. By performing small signal ac impedance spectroscopy, we show that memristors, or any other system with hysteresis relying on the conductance modulation effect, display intrinsic dynamic inductor-like and capacitance-like behaviours in specific input voltage ranges. Both the conduction inductance and the conduction capacitance originate in the same delayed conduction process linked to the memristor dynamics and not in electromagnetic or polarization effects. A simple memristor model reproduces the main features of the transition from capacitive to inductive impedance spectroscopy spectra, which causes a nonzero crossing of current-voltage curves.
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Affiliation(s)
- Juan Bisquert
- Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain.
| | - Juan B Roldán
- Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain
| | - Enrique Miranda
- Dept. Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Cerdanyola del Vallès, Spain
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Zeng T, Shi S, Hu K, Jia L, Li B, Sun K, Su H, Gu Y, Xu X, Song D, Yan X, Chen J. Approaching the Ideal Linearity in Epitaxial Crystalline-Type Memristor by Controlling Filament Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2401021. [PMID: 38695721 DOI: 10.1002/adma.202401021] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2024] [Revised: 04/29/2024] [Indexed: 05/15/2024]
Abstract
Brain-inspired neuromorphic computing has attracted widespread attention owing to its ability to perform parallel and energy-efficient computation. However, the synaptic weight of amorphous/polycrystalline oxide based memristor usually exhibits large nonlinear behavior with high asymmetry, which aggravates the complexity of peripheral circuit system. Controllable growth of conductive filaments is highly demanded for achieving the highly linear conductance modulation. However, the stochastic behavior of the filament growth in commonly used amorphous/polycrystalline oxide memristor makes it very challenging. Here, the epitaxially grown Hf0.5Zr0.5O2-based memristor with the linearity and symmetry approaching ideal case is reported. A layer of Cu nanoparticles is inserted into epitaxially grown Hf0.5Zr0.5O2 film to form the grain boundaries due to the breaking of the epitaxial growth. By combining with the local electric field enhancement, the growth of filament is confined in the grain boundaries due to the fact that the diffusion of oxygen vacancy in crystalline lattice is more difficult than that in the grain boundaries. Furthermore, the decimal operation and high-accuracy neural network are demonstrated by utilizing the highly linear and multi-level conductance modulation capacity. This method opens an avenue to control the filament growth for the application of resistance random access memory (RRAM) and neuromorphic computing.
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Affiliation(s)
- Tao Zeng
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shu Shi
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Kejun Hu
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Lanxin Jia
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Boyu Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Kaixuan Sun
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Chongqing Research Institute, National University of Singapore, Chongqing, 401123, China
- School of Chemistry and Materials Science of Shanxi Normal University, Taiyuan, 030031, China
| | - Hanxin Su
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Chongqing Research Institute, National University of Singapore, Chongqing, 401123, China
- School of Chemistry and Materials Science of Shanxi Normal University, Taiyuan, 030031, China
| | - Youdi Gu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Xiaohong Xu
- School of Chemistry and Materials Science of Shanxi Normal University, Taiyuan, 030031, China
| | - Dongsheng Song
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Xiaobing Yan
- College of Electron and Information Engineering, Hebei University, Baoding, 071002, China
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Chongqing Research Institute, National University of Singapore, Chongqing, 401123, China
- Suzhou Research Institute, National University of Singapore, Jiang Su, 215123, China
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10
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Ju D, Kim S, Park K, Lee J, Koo M, Kim S. Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38687246 DOI: 10.1021/acsami.4c03148] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Studies on neuromorphic computing systems are becoming increasingly important in the big-data-processing era as these systems are capable of energy-efficient parallel data processing and can overcome the present limitations owing to the von Neumann bottleneck. The Pt/WOx/ITO resistive random-access memory device can be used to implement versatile synapse functions because it possesses both volatile and nonvolatile characteristics. The gradual increase and decrease in the current of the Pt/WOx/ITO device with its uniform resistance state for endurance and retention enables additional synaptic applications that can be controlled using electric pulses. If the volatile and nonvolatile device properties are set through rehearsal and forgetting processes, the device can emulate various synaptic behaviors, such as potentiation and depression, paired-pulse facilitation, post-tetanic potentiation, image training, Hebbian learning rules, excitatory postsynaptic current, and Pavlov's test. Furthermore, reservoir computing can be implemented for applications such as pattern generation and recognition. This emphasizes the various applications of future neuromorphic devices, demonstrating the various favorable characteristics of pulse-enhanced Pt/WOx/ITO devices.
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Affiliation(s)
- Dongyeol Ju
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Sungjoon Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Kyungchul Park
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Jungwoo Lee
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Minsuk Koo
- Department of Computer Science and Engineering, Incheon National University, Incheon 22012, Republic of Korea
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
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11
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Chen X, Yang D, Hwang G, Dong Y, Cui B, Wang D, Chen H, Lin N, Zhang W, Li H, Shao R, Lin P, Hong H, Yao Y, Sun L, Wang Z, Yang H. Oscillatory Neural Network-Based Ising Machine Using 2D Memristors. ACS NANO 2024; 18:10758-10767. [PMID: 38598699 DOI: 10.1021/acsnano.3c10559] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
Neural networks are increasingly used to solve optimization problems in various fields, including operations research, design automation, and gene sequencing. However, these networks face challenges due to the nondeterministic polynomial time (NP)-hard issue, which results in exponentially increasing computational complexity as the problem size grows. Conventional digital hardware struggles with the von Neumann bottleneck, the slowdown of Moore's law, and the complexity arising from heterogeneous system design. Two-dimensional (2D) memristors offer a potential solution to these hardware challenges, with their in-memory computing, decent scalability, and rich dynamic behaviors. In this study, we explore the use of nonvolatile 2D memristors to emulate synapses in a discrete-time Hopfield neural network, enabling the network to solve continuous optimization problems, like finding the minimum value of a quadratic polynomial, and tackle combinatorial optimization problems like Max-Cut. Additionally, we coupled volatile memristor-based oscillators with nonvolatile memristor synapses to create an oscillatory neural network-based Ising machine, a continuous-time analog dynamic system capable of solving combinatorial optimization problems including Max-Cut and map coloring through phase synchronization. Our findings demonstrate that 2D memristors have the potential to significantly enhance the efficiency, compactness, and homogeneity of integrated Ising machines, which is useful for future advances in neural networks for optimization problems.
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Affiliation(s)
- Xi Chen
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Dongliang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Geunwoo Hwang
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Yujiao Dong
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
- Institute of Modern Circuit and Intelligent Information, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Binbin Cui
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Dingchen Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Hegan Chen
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Ning Lin
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Wenqi Zhang
- Department of Biomedical Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong, China
| | - Huihan Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Ruiwen Shao
- Beijing Advanced Innovation Center for Intelligent Robots and Systems and Institute of Engineering Medicine, Beijing Institute of Technology, Beijing 100081, China
| | - Peng Lin
- College of Computer Science and Technology, Zhejiang University, Hang Zhou 310013, China
| | - Heemyoung Hong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Linfeng Sun
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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12
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Fedotov M, Korotitsky V, Koveshnikov S. Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:668. [PMID: 38668162 PMCID: PMC11054844 DOI: 10.3390/nano14080668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Revised: 04/05/2024] [Accepted: 04/10/2024] [Indexed: 04/29/2024]
Abstract
Resistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications. For these applications, RRAM elements are arranged into Crossbar arrays, where rectifying selector devices are required for correct read operation of the memory cells. One of the key advantages of RRAM is its high scalability due to the filamentary mechanism of resistive switching, as the cell conductivity is not dependent on the cell area. Thus, a selector device becomes a limiting factor in Crossbar arrays in terms of scalability, as its area exceeds the minimal possible area of an RRAM cell. We propose a tunnel diode selector, which is self-aligned with an RRAM cell and, thus, occupies the same area. In this study, we address the theoretical and modeling aspects of creating a self-aligned selector with optimal parameters to avoid any deterioration of RRAM cell performance. We investigate the possibilities of using a tunnel diode based on single- and double-layer dielectrics and determine their optimal physical properties to be used in an HfOx-based RRAM Crossbar array.
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Affiliation(s)
- Mikhail Fedotov
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Science (IMT RAS), 6 Academician Ossipyan Str., Moscow District, Chernogolovka 142432, Russia
| | | | - Sergei Koveshnikov
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Science (IMT RAS), 6 Academician Ossipyan Str., Moscow District, Chernogolovka 142432, Russia
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13
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Kim M, Lee S, Kim SJ, Lim BM, Kang BS, Lee HS. Study on the Sodium-Doped Titania Interface-Type Memristor. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16453-16461. [PMID: 38516695 DOI: 10.1021/acsami.3c19531] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Memristors integrated into a crossbar-array architecture (CAA) are promising candidates for analog in-memory computing accelerators. However, the relatively low reliability of the memristor device and sneak current issues in CAA remain the main obstacles. Alkali ion-based interface-type memristors are promising solutions for implementing highly reliable memristor devices and neuromorphic hardware. This interface-type device benefits from self-rectifying and forming-free resistive switching (RS), and exhibits relatively low variation from device to device and cycle to cycle. In a previous report, we introduced an in situ grown Na/TiO2 memristor using atomic layer deposition (ALD) and proposed a RS mechanism from experimentally measured Schottky barrier modulation. Self-rectifying RS characteristics were observed by the asymmetric distribution of Na dopants and oxygen vacancies as the Ti metal used as the adhesion layer for the bottom electrode diffuses over the Pt electrode at 250 °C during the ALD process and is doped into the TiO2 layer. Here, we theoretically verify the modulation of the Schottky barrier at the TiO2/Pt electrode interface by Na ions. This study fabricated a Pt/Na/TiO2/Pt memristor device and confirmed its self-rectifying RS characteristics and stable retention characteristics for 24 h at 85 °C. Additionally, this device exhibited relative standard deviations of 27 and 7% in the high and low resistance states, respectively, in terms of cycle-to-cycle variation. To verify the RS mechanism, we conducted density functional theory simulations to analyze the impact of Na cations at interstitial sites on the Schottky barrier. Our findings can contribute to both fundamental understanding and the design of high-performance memristor devices for neuromorphic computing.
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Affiliation(s)
- Minjae Kim
- Department of Electrical and Computer Engineering, University of Southern California Los Angeles, Los Angeles, California 90089, United States
| | - Sangjun Lee
- Institute of Industrial Science, The University of Tokyo, 4-6-1, Meguro-ku, Tokyo 135-8505, Japan
| | - Seung Ju Kim
- Department of Electrical and Computer Engineering, University of Southern California Los Angeles, Los Angeles, California 90089, United States
| | - Byeong Min Lim
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Institute for Frontier Science & Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Byeong-Soo Kang
- Department of Electrical and Computer Engineering, University of Southern California Los Angeles, Los Angeles, California 90089, United States
| | - Hong-Sub Lee
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Institute for Frontier Science & Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
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14
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Li XD, Chen NK, Wang BQ, Niu M, Xu M, Miao X, Li XB. Resistive Memory Devices at the Thinnest Limit: Progress and Challenges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307951. [PMID: 38197585 DOI: 10.1002/adma.202307951] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 12/28/2023] [Indexed: 01/11/2024]
Abstract
The Si-based integrated circuits industry has been developing for more than half a century, by focusing on the scaling-down of transistor. However, the miniaturization of transistors will soon reach its physical limits, thereby requiring novel material and device technologies. Resistive memory is a promising candidate for in-memory computing and energy-efficient synaptic devices that can satisfy the computational demands of the future applications. However, poor cycle-to-cycle and device-to-device uniformities hinder its mass production. 2D materials, as a new type of semiconductor, is successfully employed in various micro/nanoelectronic devices and have the potential to drive future innovation in resistive memory technology. This review evaluates the potential of using the thinnest advanced materials, that is, monolayer 2D materials, for memristor or memtransistor applications, including resistive switching behavior and atomic mechanism, high-frequency device performances, and in-memory computing/neuromorphic computing applications. The scaling-down advantages of promising monolayer 2D materials including graphene, transition metal dichalcogenides, and hexagonal boron nitride are presented. Finally, the technical challenges of these atomic devices for practical applications are elaborately discussed. The study of monolayer-2D-material-based resistive memory is expected to play a positive role in the exploration of beyond-Si electronic technologies.
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Affiliation(s)
- Xiao-Dong Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Nian-Ke Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Bai-Qian Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Meng Niu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Ming Xu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xian-Bin Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
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15
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He Y, Zhu Y, Wan Q. Oxide Ionic Neuro-Transistors for Bio-inspired Computing. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:584. [PMID: 38607119 PMCID: PMC11013937 DOI: 10.3390/nano14070584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 03/24/2024] [Accepted: 03/25/2024] [Indexed: 04/13/2024]
Abstract
Current computing systems rely on Boolean logic and von Neumann architecture, where computing cells are based on high-speed electron-conducting complementary metal-oxide-semiconductor (CMOS) transistors. In contrast, ions play an essential role in biological neural computing. Compared with CMOS units, the synapse/neuron computing speed is much lower, but the human brain performs much better in many tasks such as pattern recognition and decision-making. Recently, ionic dynamics in oxide electrolyte-gated transistors have attracted increasing attention in the field of neuromorphic computing, which is more similar to the computing modality in the biological brain. In this review article, we start with the introduction of some ionic processes in biological brain computing. Then, electrolyte-gated ionic transistors, especially oxide ionic transistors, are briefly introduced. Later, we review the state-of-the-art progress in oxide electrolyte-gated transistors for ionic neuromorphic computing including dynamic synaptic plasticity emulation, spatiotemporal information processing, and artificial sensory neuron function implementation. Finally, we will address the current challenges and offer recommendations along with potential research directions.
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Affiliation(s)
- Yongli He
- Yongjiang Laboratory (Y-LAB), Ningbo 315202, China; (Y.H.); (Y.Z.)
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yixin Zhu
- Yongjiang Laboratory (Y-LAB), Ningbo 315202, China; (Y.H.); (Y.Z.)
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Qing Wan
- Yongjiang Laboratory (Y-LAB), Ningbo 315202, China; (Y.H.); (Y.Z.)
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
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16
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Peng Z, Grillo A, Pelella A, Liu X, Boyes M, Xiao X, Zhao M, Wang J, Hu Z, Di Bartolomeo A, Casiraghi C. Fully printed memristors made with MoS 2 and graphene water-based inks. MATERIALS HORIZONS 2024; 11:1344-1353. [PMID: 38180062 DOI: 10.1039/d3mh01224g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
2-Dimensional materials (2DMs) offer an attractive solution for the realization of high density and reliable memristors, compatible with printed and flexible electronics. In this work we fabricate a fully inkjet printed MoS2-based resistive switching memory, where graphene is used as top electrode and silver is used as bottom electrode. Memristic effects are observed only after annealing of each printed component. The printed memory on silicon shows low SET/RESET voltage, short switching times (less than 0.1 s) and resistance switching ratios of 103-105, comparable or superior to the performance obtained in devices with both printed silver electrodes on rigid substrates. The same device on Kapton shows resistance switching ratios of 102-103 and remains stable at least up to 2% of strain. The memristor resistance switching is attributed to the formation of Ag conductive filaments, which can be suppressed by integrating graphene grown by chemical vapour deposition (CVD) onto the silver electrode. Temperature-dependent electrical measurements starting from 200 K show that memristic behavior appears at a temperature of ∼300 K, confirming that an energy threshold is needed to form the conductive filament. This work shows that inkjet printing is a very powerful technique for the fabrication of 2DMs-based resistive switches onto rigid and flexible substrates.
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Affiliation(s)
- Zixing Peng
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| | - Alessandro Grillo
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| | - Aniello Pelella
- Physics Department "E. R. Caianiello", University of Salerno, via Giovanni Paolo II n. 132, Fisciano, 84084, Salerno, Italy
| | - Xuzhao Liu
- Department of Materials, University of Manchester, Oxford Road, Manchester, UK
- Photon Science Institute, University of Manchester, Oxford Road, Manchester, UK
| | - Matthew Boyes
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| | - Xiaoyu Xiao
- Department of Electrical and Electronics, University of Manchester, Oxford Road, Manchester, UK
| | - Minghao Zhao
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| | - Jingjing Wang
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
| | - Zhirun Hu
- Department of Electrical and Electronics, University of Manchester, Oxford Road, Manchester, UK
| | - Antonio Di Bartolomeo
- Physics Department "E. R. Caianiello", University of Salerno, via Giovanni Paolo II n. 132, Fisciano, 84084, Salerno, Italy
| | - Cinzia Casiraghi
- Department of Chemistry, University of Manchester, Oxford Road, Manchester, UK.
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17
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Lim B, Lee YM, Yoo CS, Kim M, Kim SJ, Kim S, Yang JJ, Lee HS. High-Reliability and Self-Rectifying Alkali Ion Memristor through Bottom Electrode Design and Dopant Incorporation. ACS NANO 2024; 18:6373-6386. [PMID: 38349619 PMCID: PMC10906085 DOI: 10.1021/acsnano.3c11325] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2023] [Revised: 02/06/2024] [Accepted: 02/08/2024] [Indexed: 02/28/2024]
Abstract
Ionic memristor devices are crucial for efficient artificial neural network computations in neuromorphic hardware. They excel in multi-bit implementation but face challenges like device reliability and sneak currents in crossbar array architecture (CAA). Interface-type ionic memristors offer low variation, self-rectification, and no forming process, making them suitable for CAA. However, they suffer from slow weight updates and poor retention and endurance. To address these issues, the study demonstrated an alkali ion self-rectifying memristor with an alkali metal reservoir formed by a bottom electrode design. By adopting Li metal as the adhesion layer of the bottom electrode, an alkali ion reservoir was formed at the bottom of the memristor layer by diffusion occurring during the atomic layer deposition process for the Na:TiO2 memristor layer. In addition, Al dopant was used to improve the retention characteristics by suppressing the diffusion of alkali cations. In the memristor device with optimized Al doping, retention characteristics of more than 20 h at 125 °C, endurance characteristics of more than 5.5 × 105, and high linearity/symmetry of weight update characteristics were achieved. In reliability tests on 100 randomly selected devices from a 32 × 32 CAA device, device-to-device and cycle-to-cycle variations showed low variation values within 81% and 8%, respectively.
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Affiliation(s)
- Byeong
Min Lim
- Department
of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated
Education Institute for Frontier Science & Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Yu Min Lee
- Department
of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated
Education Institute for Frontier Science & Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Chan Sik Yoo
- Department
of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated
Education Institute for Frontier Science & Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Minjae Kim
- Department
of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Seung Ju Kim
- Department
of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Sungkyu Kim
- HMC,
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - J. Joshua Yang
- Department
of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Hong-Sub Lee
- Department
of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated
Education Institute for Frontier Science & Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
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18
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Song W, Rao M, Li Y, Li C, Zhuo Y, Cai F, Wu M, Yin W, Li Z, Wei Q, Lee S, Zhu H, Gong L, Barnell M, Wu Q, Beerel PA, Chen MSW, Ge N, Hu M, Xia Q, Yang JJ. Programming memristor arrays with arbitrarily high precision for analog computing. Science 2024; 383:903-910. [PMID: 38386733 DOI: 10.1126/science.adi9405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Accepted: 12/28/2023] [Indexed: 02/24/2024]
Abstract
In-memory computing represents an effective method for modeling complex physical systems that are typically challenging for conventional computing architectures but has been hindered by issues such as reading noise and writing variability that restrict scalability, accuracy, and precision in high-performance computations. We propose and demonstrate a circuit architecture and programming protocol that converts the analog computing result to digital at the last step and enables low-precision analog devices to perform high-precision computing. We use a weighted sum of multiple devices to represent one number, in which subsequently programmed devices are used to compensate for preceding programming errors. With a memristor system-on-chip, we experimentally demonstrate high-precision solutions for multiple scientific computing tasks while maintaining a substantial power efficiency advantage over conventional digital approaches.
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Affiliation(s)
- Wenhao Song
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA
- TetraMem Inc., Fremont, CA, USA
| | | | - Yunning Li
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA
| | - Can Li
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA
| | - Ye Zhuo
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA
| | | | | | | | | | | | | | | | | | - Mark Barnell
- Air Force Research Lab, Information Directorate, Rome, NY, USA
| | - Qing Wu
- Air Force Research Lab, Information Directorate, Rome, NY, USA
| | - Peter A Beerel
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA
| | - Mike Shuo-Wei Chen
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA
| | - Ning Ge
- TetraMem Inc., Fremont, CA, USA
| | - Miao Hu
- TetraMem Inc., Fremont, CA, USA
| | - Qiangfei Xia
- TetraMem Inc., Fremont, CA, USA
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA
| | - J Joshua Yang
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA
- TetraMem Inc., Fremont, CA, USA
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA
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19
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Zhou H, Li S, Ang KW, Zhang YW. Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials. NANO-MICRO LETTERS 2024; 16:121. [PMID: 38372805 PMCID: PMC10876512 DOI: 10.1007/s40820-024-01335-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 12/25/2023] [Indexed: 02/20/2024]
Abstract
The conventional computing architecture faces substantial challenges, including high latency and energy consumption between memory and processing units. In response, in-memory computing has emerged as a promising alternative architecture, enabling computing operations within memory arrays to overcome these limitations. Memristive devices have gained significant attention as key components for in-memory computing due to their high-density arrays, rapid response times, and ability to emulate biological synapses. Among these devices, two-dimensional (2D) material-based memristor and memtransistor arrays have emerged as particularly promising candidates for next-generation in-memory computing, thanks to their exceptional performance driven by the unique properties of 2D materials, such as layered structures, mechanical flexibility, and the capability to form heterojunctions. This review delves into the state-of-the-art research on 2D material-based memristive arrays, encompassing critical aspects such as material selection, device performance metrics, array structures, and potential applications. Furthermore, it provides a comprehensive overview of the current challenges and limitations associated with these arrays, along with potential solutions. The primary objective of this review is to serve as a significant milestone in realizing next-generation in-memory computing utilizing 2D materials and bridge the gap from single-device characterization to array-level and system-level implementations of neuromorphic computing, leveraging the potential of 2D material-based memristive devices.
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Affiliation(s)
- Hangbo Zhou
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Republic of Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Republic of Singapore.
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Republic of Singapore.
| | - Yong-Wei Zhang
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore.
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20
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Pandey A, Chernyshev A, Panthi YR, Zedník J, Šturcová A, Konefał M, Kočková O, Foulger SH, Vohlídal J, Pfleger J. Synapse-Mimicking Memristors Based on 3,6-Di( tpy)-9-Phenylcarbazole Unimer and Its Copolymer with Cobalt(II) Ions. Polymers (Basel) 2024; 16:542. [PMID: 38399920 PMCID: PMC10892321 DOI: 10.3390/polym16040542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/09/2024] [Accepted: 02/14/2024] [Indexed: 02/25/2024] Open
Abstract
The title compound, unimer U (tpy stands for 2,2':6',2″-terpyridin-4'-yl end-group), by itself shows the memristor effect with a retention time of 18 h and persistence of 11 h. Its coordination copolymer with Co(II) ions, [CoU]n, exhibits multimodal resistance changes similar to the synaptic responses observed in biological systems. More than 320 cycles of potentiation and depression measured in continuous sequence occurred without observing a significant current change, confirming the operational stability and reproducibility of the device based on the [CoU]n polymer. The synaptic effect of a device with an indium tin oxide (ITO)/[CoU]n/top-electrode (TE) configuration is more pronounced for the device with TE = Au compared to devices with TE = Al or Ga. However, the latter TEs provide a cost-effective approach without any significant compromise in device plasticity. The detected changes in the synaptic weight, about 12% for pair-pulse facilitation and 80% for its depression, together with a millisecond trigger and reading pulses that decay exponentially on the time scale typical of neurosynapses, justify the device's ability to learn and memorize. These properties offer potential applications in neuromorphic computation and brain-inspired synaptic devices.
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Affiliation(s)
- Ambika Pandey
- Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague, Czech Republic; (A.P.); (Y.R.P.)
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Andrei Chernyshev
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Albertov 6, 128 00 Prague, Czech Republic; (A.C.); (J.Z.)
| | - Yadu Ram Panthi
- Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague, Czech Republic; (A.P.); (Y.R.P.)
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Jiří Zedník
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Albertov 6, 128 00 Prague, Czech Republic; (A.C.); (J.Z.)
| | - Adriana Šturcová
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Magdalena Konefał
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Olga Kočková
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Stephen H. Foulger
- Center for Optical Materials Science and Engineering Technology (COMSET), Department of Materials Science and Engineering, Clemson University, Clemson, SC 29634, USA;
- Department of Bioengineering, Clemson University, Clemson, SC 29634, USA
| | - Jiří Vohlídal
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Albertov 6, 128 00 Prague, Czech Republic; (A.C.); (J.Z.)
| | - Jiří Pfleger
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
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21
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Lu C, Meng J, Yu J, Song J, Wang T, Zhu H, Sun QQ, Zhang DW, Chen L. Novel Three-Dimensional Artificial Neural Network Based on an Eight-Layer Vertical Memristor with an Ultrahigh Rectify Ratio (>10 7) and an Ultrahigh Nonlinearity (>10 5) for Neuromorphic Computing. NANO LETTERS 2024; 24:2018-2024. [PMID: 38315050 DOI: 10.1021/acs.nanolett.3c04577] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
In recent years, memristors have successfully demonstrated their significant potential in artificial neural networks (ANNs) and neuromorphic computing. Nonetheless, ANNs constructed by crossbar arrays suffer from cross-talk issues and low integration densities. Here, we propose an eight-layer three-dimensional (3D) vertical crossbar memristor with an ultrahigh rectify ratio (RR > 107) and an ultrahigh nonlinearity (>105) to overcome these limitations, which enables it to reach a >1 Tb array size without reading failure. Furthermore, the proposed 3D RRAM shows advanced endurance (>1010 cycles), retention (>104 s), and uniformity. In addition, several synaptic functions observed in the human brain were mimicked. On the basis of the advanced performance, we constructed a novel 3D ANN, whose learning efficiency and recognition accuracy were enhanced significantly compared with those of conventional single-layer ANNs. These findings hold promise for the development of highly efficient, precise, integrated, and stable VLSI neuromorphic computing systems.
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Affiliation(s)
- Chen Lu
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Jialin Meng
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Jiajie Yu
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Jieru Song
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Tianyu Wang
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Hao Zhu
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Qing-Qing Sun
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - David Wei Zhang
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Lin Chen
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
- National Integrated Circuit Innovation Center, Shanghai 201203, China
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22
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Yu C, Li S, Pan Z, Liu Y, Wang Y, Zhou S, Gao Z, Tian H, Jiang K, Wang Y, Zhang J. Gate-Controlled Neuromorphic Functional Transition in an Electrochemical Graphene Transistor. NANO LETTERS 2024; 24:1620-1628. [PMID: 38277130 DOI: 10.1021/acs.nanolett.3c04193] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2024]
Abstract
Neuromorphic devices have attracted significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential components in artificial neural networks such as synapses and neurons are predominantly implemented by dedicated devices with specific functionalities. In this work, we present a gate-controlled transition of neuromorphic functions between artificial neurons and synapses in monolayer graphene transistors that can be employed as memtransistors or synaptic transistors as required. By harnessing the reliability of reversible electrochemical reactions between carbon atoms and hydrogen ions, we can effectively manipulate the electric conductivity of graphene transistors, resulting in a high on/off resistance ratio, a well-defined set/reset voltage, and a prolonged retention time. Overall, the on-demand switching of neuromorphic functions in a single graphene transistor provides a promising opportunity for developing adaptive neural networks for the upcoming era of artificial intelligence and machine learning.
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Affiliation(s)
- Chenglin Yu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Shaorui Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zhoujie Pan
- XingJian College, Tsinghua University, Beijing 100084, China
| | - Yanming Liu
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yongchao Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China
| | - Siyi Zhou
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zhiting Gao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China
| | - He Tian
- School of Integrated Circuits, Tsinghua University, Beijing 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Kaili Jiang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yayu Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
| | - Jinsong Zhang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
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23
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Lu C, Meng J, Song J, Wang T, Zhu H, Sun QQ, Zhang DW, Chen L. Self-Rectifying All-Optical Modulated Optoelectronic Multistates Memristor Crossbar Array for Neuromorphic Computing. NANO LETTERS 2024; 24:1667-1672. [PMID: 38241735 DOI: 10.1021/acs.nanolett.3c04358] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Researching optoelectronic memristors capable of integrating sensory and processing functions is essential for advancing the development of efficient neuromorphic vision. Here, we experimentally demonstrated an all-optical controlled and self-rectifying optoelectronic memristor (OEM) crossbar array with the function of multilevel storage under light stimuli. The NiO/TiO2 device exhibits an ultrahigh (>104) rectifying ratio (RR) thus overcoming the presence of sneak current. The reversible conductance modulation without electric signal involvement provides a novel way to realize ultrafast information processing. The proposed OEM array realized synaptic functions observed in the human brain, including long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation (PPF), the transition from short-term memory (STM) to long-term memory (LTM), and learning experience behaviors successfully. The authors present a novel OEM crossbar that possesses complete light-modulation capabilities, potentially advancing the future development of efficient neuromorphic vision.
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Affiliation(s)
- Chen Lu
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Jialin Meng
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Jieru Song
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Tianyu Wang
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Hao Zhu
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Qing-Qing Sun
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - David Wei Zhang
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
| | - Lin Chen
- School of Microelectronics, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai 200433, P. R. China
- Zhangjiang Fudan International Innovation Center, Shanghai 201203, China
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24
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Bach TPA, Cho S, Kim H, Nguyen DA, Im H. 2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory. ACS NANO 2024; 18:4131-4139. [PMID: 38206068 DOI: 10.1021/acsnano.3c08567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Intensive research on optoelectronic memory (OEM) devices based on two-dimensional (2D) van der Waals heterostructures (vdWhs) is being conducted due to their distinctive advantages for electrical-optical writing and multilevel storage. These features make OEM a promising candidate for the logic of reconfigurable operations. However, the realization of nonvolatile OEM with broadband absorption (from visible to infrared) and a high switching ratio remains challenging. Herein, we report a nonvolatile OEM based on a heterostructure consisting of rhenium disulfide (ReS2), hexagonal boron nitride (hBN) and tellurene (2D Te). The 2D Te-based floating-gate (FG) device exhibits excellent performance metrics, including a high switching on/off ratio (∼106), significant endurance (>1000 cycles) and impressive retention (>104 s). In addition, the narrow band gap of 2D Te endows the device with broadband optical programmability from the visible to near-infrared regions at room temperature. Moreover, by applying different gate voltages, light wavelengths, and laser powers, multiple bits can be successfully generated. Additionally, the device is specifically designed to enable reconfigurable inverter logic circuits (including AND and OR gates) through controlled electrical and optical inputs. These significant findings demonstrate that the 2D vdWhs with a 2D Te FG are a valuable approach in the development of high-performance OEM devices.
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Affiliation(s)
- Thi Phuong Anh Bach
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Sangeun Cho
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyungsang Kim
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Duc Anh Nguyen
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyunsik Im
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
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25
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Koo RH, Shin W, Kim S, Im J, Park SH, Ko JH, Kwon D, Kim JJ, Kwon D, Lee JH. Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric-Based Neuromorphic System. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2303735. [PMID: 38039488 PMCID: PMC10837350 DOI: 10.1002/advs.202303735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 10/11/2023] [Indexed: 12/03/2023]
Abstract
Hardware neuromorphic systems are crucial for the energy-efficient processing of massive amounts of data. Among various candidates, hafnium oxide ferroelectric tunnel junctions (FTJs) are highly promising for artificial synaptic devices. However, FTJs exhibit non-ideal characteristics that introduce variations in synaptic weights, presenting a considerable challenge in achieving high-performance neuromorphic systems. The primary objective of this study is to analyze the origin and impact of these variations in neuromorphic systems. The analysis reveals that the major bottleneck in achieving a high-performance neuromorphic system is the dynamic variation, primarily caused by the intrinsic 1/f noise of the device. As the device area is reduced and the read bias (VRead ) is lowered, the intrinsic noise of the FTJs increases, presenting an inherent limitation for implementing area- and power-efficient neuromorphic systems. To overcome this limitation, an adaptive read-biasing (ARB) scheme is proposed that applies a different VRead to each layer of the neuromorphic system. By exploiting the different noise sensitivities of each layer, the ARB method demonstrates significant power savings of 61.3% and a scaling effect of 91.9% compared with conventional biasing methods. These findings contribute significantly to the development of more accurate, efficient, and scalable neuromorphic systems.
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Affiliation(s)
- Ryun-Han Koo
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Wonjun Shin
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Seungwhan Kim
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Jiseong Im
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Sung-Ho Park
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Jong Hyun Ko
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Dongseok Kwon
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Jae-Joon Kim
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Daewoong Kwon
- Department of Electrical Engineering, Hanyang University, Seoul, 04763, South Korea
| | - Jong-Ho Lee
- Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea
- Ministry of Science and ICT, Sejong, 30109, South Korea
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26
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Kwon JY, Kim JE, Kim JS, Chun SY, Soh K, Yoon JH. Artificial sensory system based on memristive devices. EXPLORATION (BEIJING, CHINA) 2024; 4:20220162. [PMID: 38854486 PMCID: PMC10867403 DOI: 10.1002/exp.20220162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 10/16/2023] [Indexed: 06/11/2024]
Abstract
In the biological nervous system, the integration and cooperation of parallel system of receptors, neurons, and synapses allow efficient detection and processing of intricate and disordered external information. Such systems acquire and process environmental data in real-time, efficiently handling complex tasks with minimal energy consumption. Memristors can mimic typical biological receptors, neurons, and synapses by implementing key features of neuronal signal-processing functions such as selective adaption in receptors, leaky integrate-and-fire in neurons, and synaptic plasticity in synapses. External stimuli are sensitively detected and filtered by "artificial receptors," encoded into spike signals via "artificial neurons," and integrated and stored through "artificial synapses." The high operational speed, low power consumption, and superior scalability of memristive devices make their integration with high-performance sensors a promising approach for creating integrated artificial sensory systems. These integrated systems can extract useful data from a large volume of raw data, facilitating real-time detection and processing of environmental information. This review explores the recent advances in memristor-based artificial sensory systems. The authors begin with the requirements of artificial sensory elements and then present an in-depth review of such elements demonstrated by memristive devices. Finally, the major challenges and opportunities in the development of memristor-based artificial sensory systems are discussed.
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Affiliation(s)
- Ju Young Kwon
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
| | - Ji Eun Kim
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Jong Sung Kim
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Suk Yeop Chun
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoulRepublic of Korea
| | - Keunho Soh
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Jung Ho Yoon
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
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27
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Noh Y, Smolyanitsky A. Memristive Response and Capacitive Spiking in Aqueous Ion Transport through Two-Dimensional Nanopore Arrays. J Phys Chem Lett 2024; 15:665-670. [PMID: 38206569 PMCID: PMC10947333 DOI: 10.1021/acs.jpclett.3c03156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
In living organisms, information is processed in interconnected symphonies of ionic currents spiking through protein ion channels. As a result of dynamic switching of their conductive states, ion channels exhibit a variety of current-voltage nonlinearities and memory effects. Fueled by the promise of computing architectures entirely different from von Neumann, recent attempts to identify and harness similar phenomena in artificial nanofluidic environments focused on demonstrating analogue circuit elements with memory. Here we explore aqueous ionic transport through two-dimensional (2D) membranes featuring arrays of ion-trapping crown-ether-like pores. We demonstrate that for aqueous salts featuring ions with different ion-pore binding affinities, memristive effects emerge through coupling between the time-delayed state of the system and its transport properties. We also demonstrate a nanopore array that behaves as a capacitor with a strain-tunable built-in barrier, yielding behaviors ranging from current spiking to an ohmic response. By focusing on the illustrative underlying mechanisms, we demonstrate that realistically observable memory effects may be achieved in nanofluidic systems featuring crown-porous 2D membranes.
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Affiliation(s)
- Yechan Noh
- Applied Chemicals and Materials Division, National Institute of Standards and Technology, Boulder, 80305, Colorado, United States
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, 94720, California, United States
| | - Alex Smolyanitsky
- Applied Chemicals and Materials Division, National Institute of Standards and Technology, Boulder, 80305, Colorado, United States
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28
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Sun H, Wang H, Dong S, Dai S, Li X, Zhang X, Deng L, Liu K, Liu F, Tan H, Xue K, Peng C, Wang J, Li Y, Yu A, Zhu H, Zhan Y. Optoelectronic synapses based on a triple cation perovskite and Al/MoO 3 interface for neuromorphic information processing. NANOSCALE ADVANCES 2024; 6:559-569. [PMID: 38235083 PMCID: PMC10790979 DOI: 10.1039/d3na00677h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Accepted: 12/06/2023] [Indexed: 01/19/2024]
Abstract
Optoelectronic synaptic transistors are attractive for applications in next-generation brain-like computation systems, especially for their visible-light operation and in-sensor computing capabilities. However, from a material perspective, it is difficult to build a device that meets expectations in terms of both its functions and power consumption, prompting the call for greater innovation in materials and device construction. In this study, we innovatively combined a novel perovskite carrier supply layer with an Al/MoO3 interface carrier regulatory layer to fabricate optoelectronic synaptic devices, namely Al/MoO3/CsFAMA/ITO transistors. The device could mimic a variety of biological synaptic functions and required ultralow-power consumption during operation with an ultrafast speed of >0.1 μs under an optical stimulus of about 3 fJ, which is equivalent to biological synapses. Moreover, Pavlovian conditioning and visual perception tasks could be implemented using the spike-number-dependent plasticity (SNDP) and spike-rate-dependent plasticity (SRDP). This study suggests that the proposed CsFAMA synapse with an Al/MoO3 interface has the potential for ultralow-power neuromorphic information processing.
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Affiliation(s)
- Haoliang Sun
- Peng Cheng Laboratory Shenzhen 518055 China
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Haoliang Wang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | | | - Shijie Dai
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Xiaoguo Li
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Xin Zhang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Liangliang Deng
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Kai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Fengcai Liu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Hua Tan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Kun Xue
- Peng Cheng Laboratory Shenzhen 518055 China
| | - Chao Peng
- Peng Cheng Laboratory Shenzhen 518055 China
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronics and Frontiers Science Center for Nano-optoelectronics, Peking University Beijing 100080 China
| | - Jiao Wang
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Yi Li
- Peng Cheng Laboratory Shenzhen 518055 China
- Shanghai Engineering Research Center for Broadband Technologies and Applications Shanghai 200436 China
| | - Anran Yu
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
| | - Hongyi Zhu
- Peng Cheng Laboratory Shenzhen 518055 China
- Shanghai Engineering Research Center for Broadband Technologies and Applications Shanghai 200436 China
| | - Yiqiang Zhan
- Center for Micro Nano Systems, School of Information Science and Technology (SIST), Fudan University Shanghai 200433 China
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29
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Aguirre FL, Piros E, Kaiser N, Vogel T, Petzold S, Gehrunger J, Hochberger C, Oster T, Hofmann K, Suñé J, Miranda E, Alff L. Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices. Sci Rep 2024; 14:1122. [PMID: 38212346 PMCID: PMC10784569 DOI: 10.1038/s41598-023-49924-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Accepted: 12/13/2023] [Indexed: 01/13/2024] Open
Abstract
In this work, the quasi-analog to discrete transition occurring in the current-voltage characteristic of oxygen engineered yttrium oxide-based resistive random-access memory (RRAM) devices is investigated in detail. In particular, the focus of our research is not on the absolute conductance values of this characteristic but on the magnitude of its conductance changes occurring during the reset process of the device. It is found that the detected changes correspond to conductance values predominantly of the order of the quantum unit of conductance G0 = 2e2/h, where e is the electron charge and h the Planck constant. This feature is observed even at conductance levels far above G0, i.e. where electron transport is seemingly diffusive. It is also observed that such behavior is reproducible across devices comprising yttrium oxide layers with different oxygen concentrations and measured under different voltage sweep rates. While the oxygen deficiency affects the total number of quantized conductance states, the magnitude of the changes in conductance, close to 1 G0, is invariant to the oxygen content of the functional layer.
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Affiliation(s)
- F L Aguirre
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Valles, Spain.
- Intrinsic Semiconductor Technologies, Ltd., Buckinghamshire, United Kingdom.
| | - E Piros
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Darmstadt, Germany.
| | - N Kaiser
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Darmstadt, Germany
| | - T Vogel
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Darmstadt, Germany
| | - S Petzold
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Darmstadt, Germany
| | - J Gehrunger
- Computer Systems Group, Department of Electrical Engineering and Information Technology, Technische Universität Darmstadt, Darmstadt, Germany
| | - C Hochberger
- Computer Systems Group, Department of Electrical Engineering and Information Technology, Technische Universität Darmstadt, Darmstadt, Germany
| | - T Oster
- Integrated Electronic Systems Lab, Department of Electrical Engineering and Information Technology, Technische Universität Darmstadt, Darmstadt, Germany
| | - K Hofmann
- Integrated Electronic Systems Lab, Department of Electrical Engineering and Information Technology, Technische Universität Darmstadt, Darmstadt, Germany
| | - J Suñé
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Valles, Spain
| | - E Miranda
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193, Cerdanyola del Valles, Spain
| | - L Alff
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Darmstadt, Germany
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30
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Fernandes J, Grzonka J, Araújo G, Schulman A, Silva V, Rodrigues J, Santos J, Bondarchuk O, Ferreira P, Alpuim P, Capasso A. Bipolar Resistive Switching in 2D MoSe 2 Grown by Atmospheric Pressure Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1767-1778. [PMID: 38113456 DOI: 10.1021/acsami.3c14215] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are highly promising nanomaterials for various electronic devices such as field-effect transistors, junction diodes, tunneling devices, and, more recently, memristors. 2D MoSe2 stands out for having high electrical conductivity, charge carrier mobility, and melting point. While these features make it particularly appropriate as a switching layer in memristive devices, reliable and scalable production of large-area 2D MoSe2 still represents a challenge. In this study, we manufacture 2D MoSe2 films by atmospheric-pressure chemical vapor deposition and investigate them on the atomic scale. We selected and transferred MoSe2 bilayer to serve as a switching layer between asymmetric Au-Cu electrodes in miniaturized crossbar vertical memristors. The electrochemical metallization devices showed forming-free, bipolar resistive switching at low voltages, with clearly identifiable nonvolatile states. Other than low-power neuromorphic computing, low switching voltages approaching the range of biological action potentials could unlock hybrid biological interfaces.
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Affiliation(s)
- João Fernandes
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Justyna Grzonka
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Guilherme Araújo
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Alejandro Schulman
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - Vitor Silva
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - João Rodrigues
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - João Santos
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | | | - Paulo Ferreira
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Mechanical Engineering Department and IDMEC, Instituto Superior Técnico, University of Lisbon, Av. Rovisco Pais, 1049-001 Lisboa, Portugal
- Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712, United States
| | - Pedro Alpuim
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Centro de Física das Universidades do Minho e do Porto, Universidade do Minho, 4710-057 Braga, Portugal
| | - Andrea Capasso
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
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31
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Ren SG, Dong AW, Yang L, Xue YB, Li JC, Yu YJ, Zhou HJ, Zuo WB, Li Y, Cheng WM, Miao XS. Self-Rectifying Memristors for Three-Dimensional In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307218. [PMID: 37972344 DOI: 10.1002/adma.202307218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 10/13/2023] [Indexed: 11/19/2023]
Abstract
Costly data movement in terms of time and energy in traditional von Neumann systems is exacerbated by emerging information technologies related to artificial intelligence. In-memory computing (IMC) architecture aims to address this problem. Although the IMC hardware prototype represented by a memristor is developed rapidly and performs well, the sneak path issue is a critical and unavoidable challenge prevalent in large-scale and high-density crossbar arrays, particularly in three-dimensional (3D) integration. As a perfect solution to the sneak-path issue, a self-rectifying memristor (SRM) is proposed for 3D integration because of its superior integration density. To date, SRMs have performed well in terms of power consumption (aJ level) and scalability (>102 Mbit). Moreover, SRM-configured 3D integration is considered an ideal hardware platform for 3D IMC. This review focuses on the progress in SRMs and their applications in 3D memory, IMC, neuromorphic computing, and hardware security. The advantages, disadvantages, and optimization strategies of SRMs in diverse application scenarios are illustrated. Challenges posed by physical mechanisms, fabrication processes, and peripheral circuits, as well as potential solutions at the device and system levels, are also discussed.
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Affiliation(s)
- Sheng-Guang Ren
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - A-Wei Dong
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ling Yang
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yi-Bai Xue
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jian-Cong Li
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yin-Jie Yu
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hou-Ji Zhou
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wen-Bin Zuo
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yi Li
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Wei-Ming Cheng
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Xiang-Shui Miao
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
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Fu Z, Samarawickrama PI, Zhu Y, Mao Z, Wang W, Watanabe K, Taniguchi T, Tang J, Ackerman J, Tian J. Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating. NANO LETTERS 2023; 23:11866-11873. [PMID: 38079362 DOI: 10.1021/acs.nanolett.3c03926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI3-based tunnel junctions. The few-layer CrI3-based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI3. We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI3 via gating-induced Jahn-Teller distortion. Our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.
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Affiliation(s)
- ZhuangEn Fu
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Piumi I Samarawickrama
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Yanglin Zhu
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Zhiqiang Mao
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Wenyong Wang
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jinke Tang
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - John Ackerman
- Department of Chemical and Biomedical Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Jifa Tian
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
- Center for Quantum Information Science and Engineering, University of Wyoming, Laramie, Wyoming 82071, United States
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Kim D, Lee CB, Park KK, Bang H, Truong PL, Lee J, Jeong BH, Kim H, Won SM, Kim DH, Lee D, Ko JH, Baac HW, Kim K, Park HJ. Highly Reliable 3D Channel Memory and Its Application in a Neuromorphic Sensory System for Hand Gesture Recognition. ACS NANO 2023; 17:24826-24840. [PMID: 38060577 DOI: 10.1021/acsnano.3c05493] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Brain-inspired neuromorphic computing systems, based on a crossbar array of two-terminal multilevel resistive random-access memory (RRAM), have attracted attention as promising technologies for processing large amounts of unstructured data. However, the low reliability and inferior conductance tunability of RRAM, caused by uncontrollable metal filament formation in the uneven switching medium, result in lower accuracy compared to the software neural network (SW-NN). In this work, we present a highly reliable CoOx-based multilevel RRAM with an optimized crystal size and density in the switching medium, providing a three-dimensional (3D) grain boundary (GB) network. This design enhances the reliability of the RRAM by improving the cycle-to-cycle endurance and device-to-device stability of the I-V characteristics with minimal variation. Furthermore, the designed 3D GB-channel RRAM (3D GB-RRAM) exhibits excellent conductance tunability, demonstrating high symmetricity (624), low nonlinearity (βLTP/βLTD ∼ 0.20/0.39), and a large dynamic range (Gmax/Gmin ∼ 31.1). The cyclic stability of long-term potentiation and depression also exceeds 100 cycles (105 voltage pulses), and the relative standard deviation of Gmax/Gmin is only 2.9%. Leveraging these superior reliability and performance attributes, we propose a neuromorphic sensory system for finger motion tracking and hand gesture recognition as a potential elemental technology for the metaverse. This system consists of a stretchable double-layered photoacoustic strain sensor and a crossbar array neural network. We perform training and recognition tasks on ultrasonic patterns associated with finger motion and hand gestures, attaining a recognition accuracy of 97.9% and 97.4%, comparable to that of SW-NN (99.8% and 98.7%).
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Affiliation(s)
- Dohyung Kim
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul 04763, Korea
| | - Cheong Beom Lee
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Korea
| | - Kyu Kwan Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Hyeonsu Bang
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Phuoc Loc Truong
- Department of Mechanical Engineering, Gachon University, Gyeonggi 13120, Korea
| | - Jongmin Lee
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul 04763, Korea
| | - Bum Ho Jeong
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul 04763, Korea
| | - Hakjun Kim
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul 04763, Korea
| | - Sang Min Won
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Do Hwan Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Korea
| | - Daeho Lee
- Department of Mechanical Engineering, Gachon University, Gyeonggi 13120, Korea
| | - Jong Hwan Ko
- College of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Hyoung Won Baac
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Kyeounghak Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Korea
| | - Hui Joon Park
- Department of Organic and Nano Engineering & Human-Tech Convergence Program, Hanyang University, Seoul 04763, Korea
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Paradezhenko GV, Prodan DV, Pervishko AA, Yudin D, Allagui A. Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices. Phys Chem Chem Phys 2023; 26:621-627. [PMID: 38086639 DOI: 10.1039/d3cp04177h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
We propose a circuit-level model combining the Marcus-Hush-Chidsey electron current equation and the Yakopcic equation for the state variable for describing resistive switching memory devices of the structure metal-ionic conductor-metal. We extend the dynamics of the state variable originally described by a first-order time derivative by introducing a fractional derivative with an arbitrary order between zero and one. We show that the extended model fits with great fidelity the current-voltage characteristic data obtained on a Si electrochemical metallization memory device with Ag-Cu alloy.
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Affiliation(s)
- G V Paradezhenko
- Skolkovo Institute of Science and Technology, Moscow 121205, Russia.
| | - D V Prodan
- Skolkovo Institute of Science and Technology, Moscow 121205, Russia.
| | - A A Pervishko
- Skolkovo Institute of Science and Technology, Moscow 121205, Russia.
- Institute of High Technologies and Advanced Materials, Far Eastern Federal University, Vladivostok 690922, Russia
| | - D Yudin
- Skolkovo Institute of Science and Technology, Moscow 121205, Russia.
- Institute of High Technologies and Advanced Materials, Far Eastern Federal University, Vladivostok 690922, Russia
| | - A Allagui
- Department of Sustainable and Renewable Energy Engineering, University of Sharjah, P.O. Box 27272, Sharjah, United Arab Emirates
- Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174, USA
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Choi S, Moon T, Wang G, Yang JJ. Filament-free memristors for computing. NANO CONVERGENCE 2023; 10:58. [PMID: 38110639 PMCID: PMC10728429 DOI: 10.1186/s40580-023-00407-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 12/06/2023] [Indexed: 12/20/2023]
Abstract
Memristors have attracted increasing attention due to their tremendous potential to accelerate data-centric computing systems. The dynamic reconfiguration of memristive devices in response to external electrical stimuli can provide highly desirable novel functionalities for computing applications when compared with conventional complementary-metal-oxide-semiconductor (CMOS)-based devices. Those most intensively studied and extensively reviewed memristors in the literature so far have been filamentary type memristors, which typically exhibit a relatively large variability from device to device and from switching cycle to cycle. On the other hand, filament-free switching memristors have shown a better uniformity and attractive dynamical properties, which can enable a variety of new computing paradigms but have rarely been reviewed. In this article, a wide range of filament-free switching memristors and their corresponding computing applications are reviewed. Various junction structures, switching properties, and switching principles of filament-free memristors are surveyed and discussed. Furthermore, we introduce recent advances in different computing schemes and their demonstrations based on non-filamentary memristors. This Review aims to present valuable insights and guidelines regarding the key computational primitives and implementations enabled by these filament-free switching memristors.
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Affiliation(s)
- Sanghyeon Choi
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Taehwan Moon
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Integrative Energy Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
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Guo Z, Zhang J, Yang B, Li L, Liu X, Xu Y, Wu Y, Guo P, Sun T, Dai S, Liang H, Wang J, Zou Y, Xiong L, Huang J. Organic High-Temperature Synaptic Phototransistors for Energy-Efficient Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2310155. [PMID: 38100140 DOI: 10.1002/adma.202310155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2023] [Revised: 11/27/2023] [Indexed: 12/24/2023]
Abstract
Organic optoelectronic synaptic devices that can reliably operate in high-temperature environments (i.e., beyond 121°C) or remain stable after high-temperature treatments have significant potential in biomedical electronics and bionic robotic engineering. However, it is challenging to acquire this type of organic devices considering the thermal instability of conventional organic materials and the degradation of photoresponse mechanisms at high temperatures. Here, high-temperature synaptic phototransistors (HTSPs) based on thermally stable semiconductor polymer blends as the photosensitive layer are developed, successfully simulating fundamental optical-modulated synaptic characteristics at a wide operating temperature range from room temperature to 220°C. Robust optoelectronic performance can be observed in HTSPs even after experiencing 750 h of the double 85 testing due to the enhanced operational reliability. Using HTSPs, Morse-code optical decoding scheme and the visual object recognition capability are also verified at elevated temperatures. Furthermore, flexible HTSPs are fabricated, demonstrating an ultralow power consumption of 12.3 aJ per synaptic event at a low operating voltage of -0.05 mV. Overall, the conundrum of achieving reliable optical-modulated neuromorphic applications while balancing low power consumption can be effectively addressed. This research opens up a simple but effective avenue for the development of high-temperature and energy-efficient wearable optoelectronic devices in neuromorphic computing applications.
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Affiliation(s)
- Ziyi Guo
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Junyao Zhang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Ben Yang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Li
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Xu Liu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yutong Xu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yue Wu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Pu Guo
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Tongrui Sun
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Shilei Dai
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Haixia Liang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Jun Wang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yidong Zou
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Lize Xiong
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
| | - Jia Huang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
- National Key Laboratory of Autonomous Intelligent Unmanned Systems, Tongji University, Shanghai, 201804, P. R. China
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Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
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Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
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Mahata C, So H, Kim S, Kim S, Cho S. Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7510. [PMID: 38138652 PMCID: PMC10744634 DOI: 10.3390/ma16247510] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 11/26/2023] [Accepted: 11/28/2023] [Indexed: 12/24/2023]
Abstract
This study focuses on InGaZnO-based synaptic devices fabricated using reactive radiofrequency sputtering deposition with highly uniform and reliable multilevel memory states. Electron trapping and trap generation behaviors were examined based on current compliance adjustments and constant voltage stressing on the ITO/InGaZnO/ITO memristor. Using O2 + N2 plasma treatment resulted in stable and consistent cycle-to-cycle memory switching with an average memory window of ~95.3. Multilevel resistance states ranging from 0.68 to 140.7 kΩ were achieved by controlling the VRESET within the range of -1.4 to -1.8 V. The modulation of synaptic weight for short-term plasticity was simulated by applying voltage pulses with increasing amplitudes after the formation of a weak conductive filament. To emulate several synaptic behaviors in InGaZnO-based memristors, variations in the pulse interval were used for paired-pulse facilitation and pulse frequency-dependent spike rate-dependent plasticity. Long-term potentiation and depression are also observed after strong conductive filaments form at higher current compliance in the switching layer. Hence, the ITO/InGaZnO/ITO memristor holds promise for high-performance synaptic device applications.
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Affiliation(s)
- Chandreswar Mahata
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea; (C.M.)
| | - Hyojin So
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea; (C.M.)
| | - Soomin Kim
- Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea; (C.M.)
| | - Seongjae Cho
- Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
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Ramirez P, Gómez V, Cervera J, Mafe S, Bisquert J. Synaptical Tunability of Multipore Nanofluidic Memristors. J Phys Chem Lett 2023:10930-10934. [PMID: 38033300 DOI: 10.1021/acs.jpclett.3c02796] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
We demonstrate a multipore nanofluidic memristor with conical pores showcasing a wide range of hysteresis and memristor properties that provide functionalities for brainlike computation in neuromorphic applications. Leveraging the interplay between the charged functional groups on the pore surfaces and the confined ionic solution, the memristor characteristics are modulated through the electrolyte type, ionic concentrations, and pH levels of the aqueous solution. The multipore membrane mimics the functional characteristics of biological ion channels and displays synaptical potentiation and depression. Furthermore, this property can be inverted in polarity by chemically varying the pH level. The ability to modulate memory effects by ionic conductivity holds promise for enhancing signal information processing capabilities.
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Affiliation(s)
- Patricio Ramirez
- Dept. de Física Aplicada, Universitat Politècnica de València, E-46022 València, Spain
| | - Vicente Gómez
- Dept. de Física Aplicada, Universitat Politècnica de València, E-46022 València, Spain
| | - Javier Cervera
- Dept. de Física de la Terra i Termodinàmica, Universitat de València, E-46100 Burjassot, Spain
| | - Salvador Mafe
- Dept. de Física Aplicada, Universitat Politècnica de València, E-46022 València, Spain
- Dept. de Física de la Terra i Termodinàmica, Universitat de València, E-46100 Burjassot, Spain
| | - Juan Bisquert
- Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain
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Shibata K, Nishioka D, Namiki W, Tsuchiya T, Higuchi T, Terabe K. Redox-based ion-gating reservoir consisting of (104) oriented LiCoO 2 film, assisted by physical masking. Sci Rep 2023; 13:21060. [PMID: 38030675 PMCID: PMC10687094 DOI: 10.1038/s41598-023-48135-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 11/21/2023] [Indexed: 12/01/2023] Open
Abstract
Reservoir computing (RC) is a machine learning framework suitable for processing time series data, and is a computationally inexpensive and fast learning model. A physical reservoir is a hardware implementation of RC using a physical system, which is expected to become the social infrastructure of a data society that needs to process vast amounts of information. Ion-gating reservoirs (IGR) are compact and suitable for integration with various physical reservoirs, but the prediction accuracy and operating speed of redox-IGRs using WO3 as the channel are not sufficient due to irreversible Li+ trapping in the WO3 matrix during operation. Here, in order to enhance the computation performance of redox-IGRs, we developed a redox-based IGR using a (104) oriented LiCoO2 thin film with high electronic and ionic conductivity as a trap-free channel material. The subject IGR utilizes resistance change that is due to a redox reaction (LiCoO2 ⟺ Li1-xCoO2 + xLi+ + xe-) with the insertion and desertion of Li+. The prediction error in the subject IGR was reduced by 72% and the operation speed was increased by 4 times compared to the previously reported WO3, which changes are due to the nonlinear and reversible electrical response of LiCoO2 and the high dimensionality enhanced by a newly developed physical masking technique. This study has demonstrated the possibility of developing high-performance IGRs by utilizing materials with stronger nonlinearity and by increasing output dimensionality.
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Affiliation(s)
- Kaoru Shibata
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan
| | - Daiki Nishioka
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan
| | - Wataru Namiki
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Tsuchiya
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan.
| | - Tohru Higuchi
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan
| | - Kazuya Terabe
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
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Minnekhanov A, Matsukatova A, Trofimov A, Nesmelov A, Zavyalov S, Demin V, Emelyanov A. Reliable Memristive Synapses Based on Parylene-MoO x Nanocomposites for Neuromorphic Applications. ACS APPLIED MATERIALS & INTERFACES 2023; 15:54996-55008. [PMID: 37962902 DOI: 10.1021/acsami.3c13956] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/15/2023]
Abstract
Memristive devices, known for their nonvolatile resistive switching, are promising components for next-generation neuromorphic computing systems, which mimic the brain's neural architecture. Specifically, these devices are well-suited for functioning as artificial synapses due to their analogue tunability and low energy consumption. However, the improvement of their performance and reliability remains a pressing challenge. In this study, we report the development and comprehensive characterization of memristive devices based on a parylene-MoOx (PPX-Mo) nanocomposite layer, which exhibit improved characteristics over their parylene-based counterparts: lower switching voltage and energy, smaller dispersion, and better resistive plasticity. A robust statistical analysis identified the optimal synthesis parameters for these devices, providing valuable insights for future device optimization. The most probable resistive switching mechanism of the devices is proposed. By successfully integrating these memristors into a neuromorphic computing model and showcasing their scalability in crossbar geometry, we demonstrate their potential as functional artificial synapses. The results obtained from this study can be useful for the development of hardware-brain-inspired computational systems.
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Affiliation(s)
| | - Anna Matsukatova
- National Research Centre Kurchatov Institute, Moscow 123182, Russia
- Lomonosov Moscow State University, Moscow 119991, Russia
| | - Andrey Trofimov
- National Research Centre Kurchatov Institute, Moscow 123182, Russia
- Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow 141701, Russia
| | | | - Sergey Zavyalov
- National Research Centre Kurchatov Institute, Moscow 123182, Russia
| | - Vyacheslav Demin
- National Research Centre Kurchatov Institute, Moscow 123182, Russia
- Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow 141701, Russia
| | - Andrey Emelyanov
- National Research Centre Kurchatov Institute, Moscow 123182, Russia
- Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow 141701, Russia
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Mahata C, So H, Yang S, Ismail M, Kim S, Cho S. Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma. J Chem Phys 2023; 159:184712. [PMID: 37962452 DOI: 10.1063/5.0179314] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/01/2023] [Accepted: 10/24/2023] [Indexed: 11/15/2023] Open
Abstract
Bipolar gradual resistive switching was investigated in ITO/InGaZnO/ITO resistive switching devices. Controlled intrinsic oxygen vacancy formation inside the switching layer enabled the establishment of a stable multilevel memory state, allowing for RESET voltage control and non-degradable data endurance. The ITO/InGaZnO interface governs the migration of oxygen ions and redox reactions within the switching layer. Voltage-stress-induced electron trapping and oxygen vacancy formation were observed before conductive filament electroforming. This device mimicked biological synapses, demonstrating short- and long-term potentiation and depression through electrical pulse sequences. Modulation of post-synaptic currents and pulse frequency-dependent short-term potentiation were successfully emulated in the InGaZnO-based artificial synapse. The ITO/InGaZnO/ITO memristor exhibited spike-amplitude-dependent plasticity, spike-rate-dependent plasticity, and potentiation-depression synaptic learning with low energy consumption, making it a promising candidate for large-scale integration.
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Affiliation(s)
- Chandreswar Mahata
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyojin So
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Seyeong Yang
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Muhammad Ismail
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Seongjae Cho
- Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, South Korea
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Zhang C, Ning J, Wang D, Zhang J, Hao Y. A review on advanced band-structure engineering with dynamic control for nonvolatile memory based 2D transistors. NANOTECHNOLOGY 2023; 35:042001. [PMID: 37524059 DOI: 10.1088/1361-6528/acebf4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 07/31/2023] [Indexed: 08/02/2023]
Abstract
With advancements in information technology, an enormous amount of data is being generated that must be quickly accessible. However, conventional Si memory cells are approaching their physical limits and will be unable to meet the requirements of intense applications in the future. Notably, 2D atomically thin materials have demonstrated multiple novel physical and chemical properties that can be used to investigate next-generation electronic devices and breakthrough physical limits to continue Moore's law. Band structure is an important semiconductor parameter that determines their electrical and optical properties. In particular, 2D materials have highly tunable bandgaps and Fermi levels that can be achieved through band structure engineering methods such as heterostructure, substrate engineering, chemical doping, intercalation, and electrostatic doping. In particular, dynamic control of band structure engineering can be used in recent advancements in 2D devices to realize nonvolatile storage performance. This study examines recent advancements in 2D memory devices that utilize band structure engineering. The operational mechanisms and memory characteristics are described for each band structure engineering method. Band structure engineering provides a platform for developing new structures and realizing superior performance with respect to nonvolatile memory.
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Affiliation(s)
- Chi Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Jing Ning
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Dong Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
- Xidian-Wuhu Research Institute, Wuhu 241000, People's Republic of China
| | - Jincheng Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Yue Hao
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
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Zhao J, Tong L, Niu J, Fang Z, Pei Y, Zhou Z, Sun Y, Wang Z, Wang H, Lou J, Yan X. A bidirectional thermal sensory leaky integrate-and-fire (LIF) neuron model based on bipolar NbO x volatile threshold devices with ultra-low operating current. NANOSCALE 2023; 15:17599-17608. [PMID: 37874690 DOI: 10.1039/d3nr03034b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
Brain-like artificial intelligence (AI) will become the main form and important platform in future computing. It will play an important and unique role in simulating brain functions, efficiently implementing AI algorithms, and improving computing power. Developing artificial neurons that can send facilitation/depression signals to artificial synapses, sense, and process temperature information is of great significance for achieving more efficient and compact brain-like computing systems. Herein, we have constructed a NbOx bipolar volatile threshold memristor, which could be operated by 1 μA ultra-low current and up to ∼104 switching ratios. By using a leaky integrate-and-fire (LIF) artificial neuron model, a bipolar LIF artificial neuron is constructed, which can realize the conventional threshold-driven firing, all-or-nothing spiking, refractory periods, and intensity-modulated frequency response bidirectionally at the positive/negative voltage stimulation, which will give the artificial synapse facilitation/depression signals. Furthermore, this bipolar LIF neuron can also explore different temperatures to output different signals, which could be constructed as a more compact thermal sensory neuron to avoid external harm to artificial robots. This study is of great significance for improving the computational efficiency of the system more effectively, achieving high integration density and low energy consumption artificial neural networks to meet the needs of brain-like neural computing.
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Affiliation(s)
- Jianhui Zhao
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Liang Tong
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Jiangzhen Niu
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Ziliang Fang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Yifei Pei
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China
| | - Zhenyu Zhou
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Yong Sun
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Zhongrong Wang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Hong Wang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Jianzhong Lou
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Xiaobing Yan
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China
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Tong W, Wei W, Zhang X, Ding S, Lu Z, Liu L, Li W, Pan C, Kong L, Wang Y, Zhu M, Liang SJ, Miao F, Liu Y. Highly Stable HfO 2 Memristors through van der Waals Electrode Lamination and Delamination. NANO LETTERS 2023; 23:9928-9935. [PMID: 37862098 DOI: 10.1021/acs.nanolett.3c02888] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
Memristors have attracted considerable attention in the past decade, holding great promise for future neuromorphic computing. However, the intrinsic poor stability and large device variability remain key limitations for practical application. Here, we report a simple method to directly visualize the origin of poor stability. By mechanically removing the top electrodes of memristors operated at different states (such as SET or RESET), the memristive layer could be exposed and directly characterized through conductive atomic force microscopy, providing two-dimensional area information within memristors. Based on this technique, we observed the existence of multiple conducting filaments during the formation process and built up a physical model between filament numbers and the cycle-to-cycle variation. Furthermore, by improving the interface quality through the van der Waals top electrode, we could reduce the filament number down to a single filament during all switching cycles, leading to much controlled switching behavior and reliable device operation.
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Affiliation(s)
- Wei Tong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Wei Wei
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiangzhe Zhang
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
| | - Shuimei Ding
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Wanying Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Chen Pan
- Institute of Interdisciplinary of Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Lingan Kong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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Zhu R, Lilak S, Loeffler A, Lizier J, Stieg A, Gimzewski J, Kuncic Z. Online dynamical learning and sequence memory with neuromorphic nanowire networks. Nat Commun 2023; 14:6697. [PMID: 37914696 PMCID: PMC10620219 DOI: 10.1038/s41467-023-42470-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Accepted: 10/11/2023] [Indexed: 11/03/2023] Open
Abstract
Nanowire Networks (NWNs) belong to an emerging class of neuromorphic systems that exploit the unique physical properties of nanostructured materials. In addition to their neural network-like physical structure, NWNs also exhibit resistive memory switching in response to electrical inputs due to synapse-like changes in conductance at nanowire-nanowire cross-point junctions. Previous studies have demonstrated how the neuromorphic dynamics generated by NWNs can be harnessed for temporal learning tasks. This study extends these findings further by demonstrating online learning from spatiotemporal dynamical features using image classification and sequence memory recall tasks implemented on an NWN device. Applied to the MNIST handwritten digit classification task, online dynamical learning with the NWN device achieves an overall accuracy of 93.4%. Additionally, we find a correlation between the classification accuracy of individual digit classes and mutual information. The sequence memory task reveals how memory patterns embedded in the dynamical features enable online learning and recall of a spatiotemporal sequence pattern. Overall, these results provide proof-of-concept of online learning from spatiotemporal dynamics using NWNs and further elucidate how memory can enhance learning.
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Affiliation(s)
- Ruomin Zhu
- School of Physics, The University of Sydney, Sydney, NSW, Australia.
| | - Sam Lilak
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, US
| | - Alon Loeffler
- School of Physics, The University of Sydney, Sydney, NSW, Australia
| | - Joseph Lizier
- School of Computer Science, The University of Sydney, Sydney, NSW, Australia
- Centre for Complex Systems, The University of Sydney, Sydney, NSW, Australia
| | - Adam Stieg
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA, US.
- WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan.
| | - James Gimzewski
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, US.
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA, US.
- WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan.
- Research Center for Neuromorphic AI Hardware, Kyutech, Kitakyushu, Japan.
| | - Zdenka Kuncic
- School of Physics, The University of Sydney, Sydney, NSW, Australia.
- Centre for Complex Systems, The University of Sydney, Sydney, NSW, Australia.
- The University of Sydney Nano Institute, Sydney, NSW, Australia.
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Luo J, Tian G, Zhang DG, Zhang XC, Lu ZN, Zhang ZD, Cai JW, Zhong YN, Xu JL, Gao X, Wang SD. Voltage-Mode Ferroelectric Synapse for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:48452-48461. [PMID: 37802499 DOI: 10.1021/acsami.3c09506] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/10/2023]
Abstract
Ferroelectric materials with a modulable polarization extent hold promise for exploring voltage-driven neuromorphic hardware, in which direct current flow can be minimized. Utilizing a single active layer of an insulating ferroelectric polymer, we developed a voltage-mode ferroelectric synapse that can continuously and reversibly update its states. The device states are straightforwardly manifested in the form of variable output voltage, enabling large-scale direct cascading of multiple ferroelectric synapses to build a deep physical neural network. Such a neural network based on potential superposition rather than current flow is analogous to the biological counterpart driven by action potentials in the brain. A high accuracy of over 97% for the simulation of handwritten digit recognition is achieved using the voltage-mode neural network. The controlled ferroelectric polarization, revealed by piezoresponse force microscopy, turns out to be responsible for the synaptic weight updates in the ferroelectric synapses. The present work demonstrates an alternative strategy for the design and construction of emerging artificial neural networks.
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Affiliation(s)
- Jie Luo
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
| | - Guo Tian
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Ding-Guo Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
| | - Xing-Chen Zhang
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Zhen-Ni Lu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
| | - Zhong-Da Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
| | - Jia-Wei Cai
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
| | - Ya-Nan Zhong
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
| | - Jian-Long Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
| | - Xu Gao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
| | - Sui-Dong Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, P. R. China
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Ding G, Zhao J, Zhou K, Zheng Q, Han ST, Peng X, Zhou Y. Porous crystalline materials for memories and neuromorphic computing systems. Chem Soc Rev 2023; 52:7071-7136. [PMID: 37755573 DOI: 10.1039/d3cs00259d] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.
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Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Qi Zheng
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiaojun Peng
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
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49
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Chen X, Zhao X, Huang X, Tang XZ, Sun Z, Ni DL, Hu H, Yue J. Flexible multilevel nonvolatile biocompatible memristor with high durability. J Nanobiotechnology 2023; 21:375. [PMID: 37833677 PMCID: PMC10576337 DOI: 10.1186/s12951-023-02117-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Accepted: 09/20/2023] [Indexed: 10/15/2023] Open
Abstract
Current protein or glucose based biomemristors have low resistance-switching performance and require complex structural designs, significantly hindering the development of implantable memristor devices. It is imperative to discover novel candidate materials for biomemristor with high durability and excellent biosafety for implantable health monitoring. Herein, we initially demonstrate the resistance switching characteristics of a nonvolatile memristor in a configuration of Pt/AlOOH/ITO consisting of biocompatible AlOOH nanosheets sandwiched between a Indium Tin Oxides (ITO) electrode and a platinum (Pt) counter-electrode. The hydrothermally synthesized AlOOH nanosheets have excellent biocompatibility as confirmed through the Cell Counting Kit-8 (CCK-8) tests. Four discrete resistance levels are achieved in this assembled device in responsible to different compliance currents (ICC) for the set process, where the emerging multilevel states show high durability over 103 cycles, outperforming the protein-based biomemristors under similar conditions. The excellent performance of the Pt/AlOOH/ITO memristor is attributed to the significant role of hydrogen proton with pipe effect, as confirmed by both experimental results and density functional theory (DFT) analyses. The present results indicate the nonvolatile memristors with great potential as the next generation implantable multilevel resistive memories for long-term human health monitoring.
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Affiliation(s)
- Xiaoping Chen
- Powder Metallurgy Research Institute, Central South University, Changsha, 410083, China
| | - Xu Zhao
- Powder Metallurgy Research Institute, Central South University, Changsha, 410083, China
| | - Xiaozhong Huang
- Powder Metallurgy Research Institute, Central South University, Changsha, 410083, China
| | - Xiu-Zhi Tang
- Research Institute of Aerospace Technology, Central South University, Changsha, 410083, China
| | - Ziqi Sun
- School of Chemistry and Physics, QUT Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4001, Australia.
| | - Da-Long Ni
- Department of Orthopaedics, Shanghai Key Laboratory for Prevention and Treatment of Bone and Joint Diseases, Shanghai Institute of Traumatology and Orthopaedics, Ruijin Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, 200025, China.
| | - Hailong Hu
- State Key Laboratory of Powder Metallurgy, Hunan Key Laboratory of Advanced fibers and Composites, State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Research Institute of Aerospace Technology, Central South University, Changsha, 410083, China.
| | - Jianling Yue
- Powder Metallurgy Research Institute, Central South University, Changsha, 410083, China.
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50
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Kim D, Kim IJ, Lee JS. Demonstration of the threshold-switching memory devices using EMIm(AlCl 3)Cl and ZnO for neuromorphic applications. NANOTECHNOLOGY 2023; 35:015203. [PMID: 37830748 DOI: 10.1088/1361-6528/acf93d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Accepted: 09/13/2023] [Indexed: 10/14/2023]
Abstract
The threshold-switching behaviors of the synapses lead to energy-efficient operation in the neural computing system. Here, we demonstrated the threshold-switching memory devices by inserting the ZnO layer into the ionic synaptic devices. The EMIm(AlCl3)Cl is utilized as the electrolyte because its conductance can be tuned by the charge states of the Al-based ions. The redox reactions of the Al ions in the electrolyte can lead to the analog resistive switching characteristics, such as excitatory postsynaptic current, paired-pulse facilitation, potentiation, and depression. By inserting the ZnO layer into the EMIm(AlCl3)-based ionic synaptic devices, the threshold switching behaviors are demonstrated. Using the resistivity difference between ZnO and EMIm(AlCl3)Cl, the analog resistive switching behaviors are tunned as the threshold-switching behaviors. The threshold-switching behaviors are achieved by applying the spike stimuli to the device. Demonstration of the threshold-switching behaviors of the ionic synaptic devices has a possibility to achieve high energy-efficiency for the ion-based artificial synapses.
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Affiliation(s)
- Dongshin Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Ik-Jyae Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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