All-electric all-semiconductor spin field-effect transistors

Spin logic enabled by current vector adder

In order to advance the silicon integrated circuit technology, researchers have been searching for memory and logic devices with new physical state variables other than charge. Spin logic device that adds one degree of freedom-electron spin to charge has been considered as a promising candidate due to its low power consumption, built-in memory, and high scalability. Here, we demonstrate that a new variable - current direction on the sample can be introduced into the spin logic operation. The current direction of the sample is considered as a vector. For the various input currents along different directions, the direction of vector sum (vector adder) determines the output and therefore can enable complex logic functions. We have realized the basic Boolean logic gates including AND, OR, NAND, NOR, and even complicated IMPLY in a single device and further constructed a full adder with only 2 devices.

Highly Efficient Spin Injection and Readout Across Van Der Waals Interface

Spin injection, transport, and detection across the interface between a ferromagnet and a spin-carrying channel are crucial for energy-efficient spin logic devices. However, interfacial conductance mismatch, spin dephasing, and inefficient spin-to-charge conversion significantly reduce the efficiency of these processes. In this study, it is demonstrated that an all van der Waals heterostructure consisting of a ferromagnet (Fe3GeTe2) and Weyl semimetal enables a large spin readout efficiency. Specifically, a nonlocal spin readout signal of 150 mΩ and a local spin readout signal of 7.8 Ω is achieved, which reach the signal level useful for practical spintronic devices. The remarkable spin readout signal is attributed to suppressed spin dephasing channels at the vdW interfaces, long spin diffusion, and efficient charge-spin interconversion in Td-MoTe2. These findings highlight the potential of vdW heterostructures for spin Hall effect-enabled spin detection with high efficiency, opening up new possibilities for spin-orbit logic devices using vdW interfaces.

Spin Polarization via Adiabatic and Counterdiabatic Engineering

A spin filter is a device that allows only a single spin state to pass, equivalent to a polarizing filter for a beam of light. Here, taking inspiration from shortcuts to adiabaticity, I demonstrate that the potential landscape of a typical quantum point contact can be tuned to act as a two terminal spin filter or to generate a spin-polarized beam. The effect presented is sufficiently robust that rough engineering yields a significant effect, as demonstrated by experiments on asymmetrically biased quantum point contacts in InAs quantum wells.

Onset of spin entanglement in doped carbon nanotubes studied by EPR

Nanoscale semiconductors with isolated spin impurities have been touted as promising materials for their potential use at the intersection of quantum, spin, and information technologies. Electron paramagnetic resonance (EPR) studies of spins in semiconducting carbon nanotubes have overwhelmingly focused on spins more strongly localized by sp3-type lattice defects. However, the creation of such impurities is irreversible and requires specific reactions to generate them. Shallow charge impurities, on the other hand, are more readily and widely produced by simple redox chemistry, but have not yet been investigated for their spin properties. Here, we use EPR to study p-doped (6,5) semiconducting single-wall carbon nanotubes (s-SWNTs) and elucidate the role of impurity-impurity interactions in conjunction with exchange and correlation effects for the spin behavior of this material. A quantitative comparison of the EPR signals with phenomenological modeling combined with configuration interaction electronic structure calculations of impurity pairs shows that orbital overlap, combined with exchange and correlation effects, causes the EPR signal to disappear due to spin entanglement for doping levels corresponding to impurity spacings of 14 nm (at 30 K). This transition is predicted to shift to higher doping levels with increasing temperature and to lower levels with increasing screening, providing an opportunity for improved spin control in doped s-SWNTs.

Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale

Spin-orbit interactions arise whenever the bulk inversion symmetry and/or structural inversion symmetry of a crystal is broken providing a bridge between a qubit's spin and orbital degree of freedom. While strong interactions can facilitate fast qubit operations by all-electrical control, they also provide a mechanism to couple charge noise thereby limiting qubit lifetimes. Previously believed to be negligible in bulk silicon, recent silicon nano-electronic devices have shown larger than bulk spin-orbit coupling strengths from Dresselhaus and Rashba couplings. Here, it is shown that with precision placement of phosphorus atoms in silicon along the [110] direction (without inversion symmetry) or [111] direction (with inversion symmetry), a wide range of Dresselhaus and Rashba coupling strength can be achieved from zero to 1113 × 10-13eV-cm. It is shown that with precision placement of phosphorus atoms, the local symmetry (C2v, D2d, and D3d) can be changed to engineer spin-orbit interactions. Since spin-orbit interactions affect both qubit operation and lifetimes, understanding their impact is essential for quantum processor design.

Emerging Spintronic Materials and Functionalities

The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.

Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature

The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.

Electronic and magnetic properties of GeS monolayer effected by point defects and doping

In this work, defect engineering and doping are proposed to effectively functionalize a germanium sulfide (GeS) mononolayer. With a buckled hexagonal structure, the good dynamical and thermal stability of the GeS monolayer is confirmed. PBE(HSE06)-based calculations assert the indirect gap semiconductor nature of this two-dimensional (2D) material with a relatively large band gap of 2.48(3.28) eV. The creation of a single Ge vacancy magnetizes the monolayer with a total magnetic moment of 1.99 μB, creating a the feature-rich half-metallic nature. VaS vacancy, VaGeS divacancy, SGe and GeS antisites preserve the non-magnetic nature; however, they induce considerable band gap reduction of the order 47.98%, 89.11%, 29.84%, and 62.5%, respectively. By doping with transition metals (TMs), large total magnetic moments of 3.00, 4.00, and 5.00 μB are obtained with V, Cr-Fe, and Mn impurities, respectively. The 3d orbital of TM dopants mainly regulates the electronic and magnetic properties, which induces either the half-metallic or diluted magnetic semiconductor nature. It is found that the doping site plays a determinant role in the case of doping with VA-group atoms (P and As). The GeS monolayer can be metallized by doping the Ge sublattice, meanwhile both spin states exhibit semiconductor character with strong spin polarization upon doping the S sublattice to obtain a diluted magnetic semiconductor nature with a total magnetic moment of 1.00 μB. In these cases, the magnetism originates mainly from P and As impurities. The obtained results suggest an efficient approach to functionalize the GeS monolayer for optoelectronic and spintronic applications.

Spin polarization in quantum point contact based on wurtzite topological quantum well

Manipulating spin polarization in wide-gap wurtzite semiconductors is crucial for the development of high-temperature spintronics applications. A topological insulator revealed recently in wurtzite quantum wells (QWs) provides a platform to mediate spin-polarized transport through the polarization field-driven topological edges and large Rashba spin-orbit coupling (SOC). Here, we propose a spin-polarized device in a quantum point contact (QPC) structure based on ZnO/CdO wurtzite topological QWs. The results show that the QPC width can sufficiently control the lateral spin-orbit coupling (SOC) as well as the band gap of the edge states through the quantum size effect. As a result, the spin-polarized conductance exhibits oscillation due to the spin precession, which can be controlled by adjusting the voltage imposed on the split gate. The QPC-induced large spin splitting is highly nonlinear and becomes strong close to the gap. The spin splitting of the edge states will be suppressed for QPC widths greater than 50 nm, and thus lead to an extremely long spin precession length. This QPC width-dependent lateral SOC effect provides an emerging electrical approach to manipulate spin-polarized electron transport in topological wurtzite systems.

Topological quantum devices: a review

The introduction of the concept of topology into condensed matter physics has greatly deepened our fundamental understanding of transport properties of electrons as well as all other forms of quasi particles in solid materials. It has also fostered a paradigm shift from conventional electronic/optoelectronic devices to novel quantum devices based on topology-enabled quantum device functionalities that transfer energy and information with unprecedented precision, robustness, and efficiency. In this article, the recent research progress in topological quantum devices is reviewed. We first outline the topological spintronic devices underlined by the spin-momentum locking property of topology. We then highlight the topological electronic devices based on quantized electron and dissipationless spin conductivity protected by topology. Finally, we discuss quantum optoelectronic devices with topology-redefined photoexcitation and emission. The field of topological quantum devices is only in its infancy, we envision many significant advances in the near future.

Structure, Stability, and Superconductivity of Two-Dimensional Janus NbSH Monolayers: A First-Principle Investigation

Two-dimensional Janus materials have unique structural characteristics due to their lack of out-of-plane mirror symmetry, resulting in many excellent physical and chemical properties. Using first-principle calculations, we performed a detailed investigation of the possible stable structures and properties of two-dimensional Janus NbSH. We found that both Janus 1T and 2H structures are semiconductors, unlike their metallic counterparts MoSH. Furthermore, we predicted a new stable NbSH monolayer using a particle swarm optimization method combined with first-principle calculations. Interestingly, the out-of-plane mirror symmetry is preserved in this newly found 2D structure. Furthermore, the newly found NbSH is metallic and exhibits intrinsic superconducting behavior. The superconducting critical temperature is about 6.1 K under normal conditions, which is found to be very sensitive to stress. Even under a small compressive strain of 1.08%, the superconducting critical temperature increases to 9.3 K. In addition, the superconductivity was found to mainly originate from Nb atomic vibrations. Our results show the diversity of structures and properties of the two-dimensional Janus transition metal sulfhydrate materials and provide some guidelines for further investigations.

Controlled Rotation of Electrically Injected Spins in a Nonballistic Spin-Field-Effect Transistor

Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin-field-effect transistor (sFET). To date, there have been only a few reports on electrically controlled spin precession in sFET-like devices. These devices operate in the ballistic regime, as postulated in the original sFET proposal, and hence need high SOC channel materials in practice. Here, we demonstrate gate-controlled precession of spins in a nonballistic sFET using an array of narrow diffusive wires as a channel between a spin source and a spin drain. Our study shows that spins traveling in a semiconducting channel can be coherently rotated on a distance far exceeding the electrons' mean free path, and spin-transistor functionality can be thus achieved in nonballistic channels with relatively low SOC, relaxing two major constraints of the original sFET proposal.

Nonlocal Spin Valves Based on Graphene/Fe3GeTe2 van der Waals Heterostructures

With recent advances in two-dimensional (2D) ferromagnets with enhanced Curie temperatures, it is possible to develop all-2D spintronic devices with high-quality interfaces using 2D ferromagnets. In this study, we have successfully fabricated nonlocal spin valves with Fe3GeTe2 (FGT) as the spin source and detector and multilayer graphene as the spin transport channel. The nonlocal spin transport signal was found to strongly depend on temperature and disappear at a temperature below the Curie temperature of the FGT flakes, which stemmed from the temperature-dependent ferromagnetism of FGT. The spin injection efficiency was estimated to be about 1%, close to that of conventional nonlocal spin valves with transparent contacts between ferromagnetic electrodes and the graphene channel. In addition, the spin transport signal was found to depend on the direction of the magnetic field and the magnitude of the current, which was due to the strong perpendicular magnetic anisotropy of FGT and the thermal effect, respectively. Our results provide opportunities to extend the applications of van der Waals heterostructures in spintronic devices.

The Giant Spin-to-Charge Conversion of the Layered Rashba Material BiTeI

Rashba spin-orbit coupling (SOC) could facilitate an efficient interconversion between spin and charge currents. Among various systems, BiTeI holds one of the largest Rashba-type spin splittings. Unlike other Rashba systems (e.g., Bi/Ag and Bi₂Se₃), an experimental investigation of the spin-to-charge interconversion in BiTeI remains to be explored. Through performing an angle-resolved photoemission spectroscopy (ARPES) measurement, such a large Rashba-type spin splitting with a Rashba parameter α_R = 3.68 eV Å is directly identified. By studying the spin pumping effect in the BiTeI/NiFe bilayer, we reveal a very large inverse Rashba-Edelstein length λ_IREE ≈ 1.92 nm of BiTeI at room temperature. Furthermore, the λ_IREE monotonously increases to 5.00 nm at 60 K, indicating an enhanced Rashba SOC at low temperature. These results suggest that BiTeI films with the giant Rashba SOC are promising for achieving efficient spin-to-charge interconversion, which could be implemented for building low-power-consumption spin-orbitronic devices.

Flying electron spin control gates

The control of "flying" (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations on a chip. Typically, gates based on electric or magnetic fields provide the necessary perturbation for their control either globally or at well-defined locations. Here, we demonstrate the dynamic control of moving electron spins via contactless gates that move together with the spins. The concept is realized using electron spins trapped and transported by moving potential dots defined by a surface acoustic wave (SAW). The SAW strain at the electron trapping site, which is set by the SAW amplitude, acts as a contactless, tunable gate that controls the precession frequency of the flying spins via the spin-orbit interaction. We show that the degree of precession control in moving dots exceeds previously reported results for unconstrained transport by an order of magnitude and is well accounted for by a theoretical model for the strain contribution to the spin-orbit interaction. This flying spin gate permits the realization of an acoustically driven optical polarization modulator based on electron spin transport, a key element for on-chip spin information processing with a photonic interface.

Optical manipulation of Rashba-split 2-dimensional electron gas

In spintronics, the two main approaches to actively control the electrons’ spin involve static magnetic or electric fields. An alternative avenue relies on the use of optical fields to generate spin currents, which can bolster spin-device performance, allowing for faster and more efficient logic. To date, research has mainly focused on the optical injection of spin currents through the photogalvanic effect, and little is known about the direct optical control of the intrinsic spin-splitting. To explore the optical manipulation of a material’s spin properties, we consider the Rashba effect. Using time- and angle-resolved photoemission spectroscopy (TR-ARPES), we demonstrate that an optical excitation can tune the Rashba-induced spin splitting of a two-dimensional electron gas at the surface of Bi₂Se₃. We establish that light-induced photovoltage and charge carrier redistribution - which in concert modulate the Rashba spin-orbit coupling strength on a sub-picosecond timescale - can offer an unprecedented platform for achieving optically-driven spin logic devices.

The major challenge for the development of spin based information processing is to obtain efficient ways of controlling spin. Here, Michiardi et al show that the Rashba spin-splitting at the surface of Bi₂Se₃ topological insulator can be controlled via optical pulses on picosecond timescales.

Elastodynamically Induced Spin and Charge Pumping in Bulk Heavy Metals

Analogous to the spin-Hall effect (SHE), ab initio electronic structure calculations reveal that acoustic phonons can induce charge (spin) current flowing along (normal to) its propagation direction. Using the Floquet approach we have calculated the elastodynamically induced charge and spin pumping in bulk Pt and demonstrate that (i) the longitudinal charge pumping originates from the Berry curvature, while the transverse pumped spin current is an odd function of the electronic relaxation time and diverges in the clean limit. (ii) The longitudinal charge current is of nonrelativstic origin, while the transverse spin current is a relativistic effect that to lowest order scales linearly with the spin-orbit coupling strength. (iii) Both charge and spin pumped currents have parabolic dependence on the amplitude of the elastic wave.

Suspended semiconductor nanostructures: physics and technology

The current state of research on quantum and ballistic electron transport in semiconductor nanostructures with a two-dimensional electron gas separated from the substrate and nanoelectromechanical systems is reviewed. These nanostructures fabricated using the surface nanomachining technique have certain unexpected features in comparison to their non-suspended counterparts, such as additional mechanical degrees of freedom, enhanced electron-electron interaction and weak heat sink. Moreover, their mechanical functionality can be used as an additional tool for studying the electron transport, complementary to the ordinary electrical measurements. The article includes a comprehensive review of spin-dependent electron transport and multichannel effects in suspended quantum point contacts, ballistic and adiabatic transport in suspended nanostructures, as well as investigations on nanoelectromechanical systems. We aim to provide an overview of the state-of-the-art in suspended semiconductor nanostructures and their applications in nanoelectronics, spintronics and emerging quantum technologies.

Influence of Device Geometry and Imperfections on the Interpretation of Transverse Magnetic Focusing Experiments

Spatially separating electrons of different spins and efficiently generating spin currents are crucial steps towards building practical spintronics devices. Transverse magnetic focusing is a potential technique to accomplish both those tasks. In a material where there is significant Rashba spin-orbit interaction, electrons of different spins will traverse different paths in the presence of an external magnetic field. Experiments have demonstrated the viability of this technique by measuring conductance spectra that indicate the separation of spin-up and spin-down electrons. However the effect that the geometry of the leads has on these measurements is not well understood. By simulating an InGaAs-based transverse magnetic focusing device, we show that the resolution of features in the conductance spectra is affected by the shape, separation and width of the leads. Furthermore, the number of subbands occupied by the electrons in the leads affects the ratio between the amplitudes of the spin-split peaks in the spectra. We simulated devices with random onsite potentials and observed that transverse magnetic focusing devices are sensitive to disorder. Ultimately we show that careful choice and characterisation of device geometry are crucial for correctly interpreting the results of transverse magnetic focusing experiments.

Electrically Controllable Kondo Correlation in Spin-Orbit-Coupled Quantum Point Contacts

Integrating the Kondo correlation and spin-orbit interactions, each of which have individually offered unprecedented means to manipulate electron spins, in a controllable way can open up new possibilities for spintronics. We demonstrate electrical control of the Kondo correlation by coupling the bound spin to leads with tunable Rashba spin-orbit interactions, realized in semiconductor quantum point contacts. We observe a transition from single to double peak zero-bias anomalies in nonequilibrium transport-the manifestation of the Kondo effect-indicating a controlled Kondo spin reversal using only spin-orbit interactions. Universal scaling of the Kondo conductance is demonstrated, implying that the spin-orbit interactions could enhance the Kondo temperature. A theoretical model based on quantum master equations is also developed to calculate the nonequilibrium quantum transport.

Electronic properties of semiconductor quantum wires for shallow symmetric and asymmetric confinements

Quantum wires (QWs) and quantum point contacts (QPCs) have been realized in GaAs/AlGaAs heterostructures in which a two-dimensional electron gas resides at the interface between GaAs and AlGaAs layered semiconductors. The electron transport in these structures has previously been studied experimentally and theoretically, and a 0.7 conductance anomaly has been discovered. The present paper is motivated by experiments with a QW in shallow symmetric and asymmetric confinements that have shown additional conductance anomalies at zero magnetic field. The proposed device consists of a QPC that is formed by split gates and a top gate between two large electron reservoirs. This paper is focussed on the theoretical study of electron transport through a wide top-gated QPC in a low-density regime and is based on density functional theory. The electron-electron interaction and shallow confinement make the splitting of the conduction channel into two channels possible. Each of them becomes spin-polarized at certain split and top gates voltages and may contribute to conductance giving rise to additional conductance anomalies. For symmetrically loaded split gates two conduction channels contribute equally to conductance. For the case of asymmetrically applied voltage between split gates conductance anomalies may occur between values of 0.25(2e²/h) and 0.7(2e²/h) depending on the increased asymmetry in split gates voltages. This corresponds to different degrees of spin-polarization in the two conduction channels that contribute differently to conductance. In the case of a strong asymmetry in split gates voltages one channel of conduction is pinched off and just the one remaining channel contributes to conductance. We have found that on the perimeter of the anti-dot there are spin-polarized states. These states may also contribute to conductance if the radius of the anti-dot is small enough and tunneling between these states may occur. The spin-polarized states in the QPC with shallow confinement tuned by electric means may be used for the purposes of quantum technology.

Electrical Control of Valley-Zeeman Spin-Orbit-Coupling-Induced Spin Precession at Room Temperature

The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin precession has been observed in the ballistic regime and at low temperatures only. However, the strong spin anisotropy and the valley character of the electronic states in 2D materials provide unique control knobs to manipulate spin precession. Here, by manipulating the anisotropic spin-orbit coupling in bilayer graphene by the proximity effect to WSe_{2}, we achieve coherent spin precession in the absence of an external magnetic field, even in the diffusive regime. Remarkably, the sign of the precessing spin polarization can be tuned by a back gate voltage and by a drift current. Our realization of a spin field-effect transistor at room temperature is a cornerstone for the implementation of energy efficient spin-based logic.

Finite transverse conductance and anisotropic magnetoconductance under an applied in-plane magnetic field in two-dimensional electron gases with strong spin-orbit coupling

The current in response to a bias in certain two-dimensional electron gas (2DEG), can have a nonzero transverse component under a finite magnetic field applied in the plane where electrons are confined. This phenomenon known as planar Hall effect (PHE) is accompanied by dependencies of both the longitudinal and the transverse components of the current on the angleϕbetween the bias direction and the magnetic field. This effect can be observed in a variety of systems, for example in topological insulators where spin-momentum locking of the topologically protected surface states is the root cause for the effect and in magnetic systems where anisotropic magnetic ordering induces it. In 2DEG with spin orbit coupling (SOC) such as oxide interfaces, this effect has been experimentally witnessed. Further, a fourfold oscillation in longitudinal resistance as a function ofϕhas also been observed. Motivated by these, we perform scattering theory calculations on a 2DEG with SOC in presence of an in-plane magnetic field connected to two-dimensional leads on either sides to obtain longitudinal and transverse conductances. We find that the longitudinal conductance isπ-periodic and the transverse conductance is 2π-periodic inϕ. The magnitude of oscillation in transverse conductance withϕis enhanced in certain patches in (α,b)-plane whereαis the strength of SOC andbis Zeeman energy due to magnetic field. The oscillation in transverse conductance withϕcan be highly multi-fold for large values ofαandb. The highly multi-fold oscillations of transverse conductance are due to Fabry-Pérot type interference between the modes in the central region as backed by its length dependent features. Our study establishes that SOC in a material is sufficient to observe PHE without the need for anisotropic magnetic ordering or nontrivial topology of the bandstructure.

Tuning electronic phase in noncentrosymmetric quantum spin Hall insulators through physical stimuli

In this work, the perturbation-induced phase transitions in noncentrosymmetric quantum spin Hall insulators (QSHIs) are analytically addressed. In particular, the dilute charged impurity, the electric field, and the Zeeman splitting field are considered within the tight-binding Hamiltonian model, Green's function approach, and the Born approximation. Following theC_3vsymmetry breaking in the PbBiI compound as a representative QSHI, the band gap becomes larger via the electric field, while the system transits to the semimetallic phase via the dilute charged impurities and Zeeman field, modifying the degenerate states in the electronic density of states. While the coexistence of electric field and impurities demonstrate that the system backs to its initial semiconducting phase, the combined Zeeman field and impurities do not alter the robust semimetallic phase.

Highly persistent spin textures with giant tunable spin splitting in the two-dimensional germanium monochalcogenides

The ability to control the spin textures in semiconductors is a fundamental step toward novel spintronic devices, while seeking desirable materials exhibiting persistent spin texture (PST) remains a key challenge. The PST is the property of materials preserving a unidirectional spin orientation in the momentum space, which has been predicted to support an extraordinarily long spin lifetime of carriers. Herein, by using first-principles density functional theory calculations, we report the emergence of the PST in the two-dimensional (2D) germanium monochalcogenides (GeMC). By considering two stable formation of the 2D GeMC, namely the pure GeX and Janus Ge2XY monolayers (X, Y = S, Se, and Te), we observed the PST around the valence band maximum where the spin orientation is enforced by the lower point group symmetry of the crystal. In the case of the pure GeX monolayers, we found that the PST is characterized by fully out-of-plane spin orientation protected by C2v point group, while the canted PST in the y - z plane is observed in the case of the Janus Ge2XY monolayers due to the lowering symmetry into Cs point group. More importantly, we find large spin-orbit coupling (SOC) parameter in which the PST sustains, which could be effectively tuned by in-plane strain. The large SOC parameter observed in the present systems leads to the small wavelength of the spatially periodic mode of the spin polarization, which is promising for realization of the short spin channel in the spin Hall transistor devices.

Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

A two-dimensional electron gas (2DEG), which has recently been shown to develop in the central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous polarization effect, offers a unique scenario, where the symmetry between the conduction and valence band is preserved over the entire confining potential. This results in the suppression of Rashba coupling even when the shape of the wedge is not symmetric. Here, for such a 2DEG channel, relaxation time for different spin projections is calculated as a function of donor concentration and gate bias. Our study reveals a strong dependence of the relaxation rate on the spin-orientation and density of carriers in the channel. Most interestingly, relaxation of spin oriented along the direction of confinement has been found to be completely switched off. Upon applying a suitable bias at the gate, the process can be switched on again. Exploiting this fascinating effect, an electrically driven spin-transistor has been proposed.

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

The peculiar correlationship between the optical localization-state and the electrical deep-level defect-state was observed in the In_0.52Al_0.48As/In_0.53Ga_0.47As quantum well structure that comprises two quantum-confined electron-states and two hole-subbands. The sample clearly exhibited the Fermi edge singularity (FES) peak in its photoluminescence spectrum at 10–300 K; and the FES peak was analyzed in terms of the phenomenological line shape model with key physical parameters such as the Fermi energy, the hole localization energy, and the band-to-band transition amplitude. Through the comprehensive studies on both the theoretical calculation and the experimental evaluation of the energy band profile, we found out that the localized state, which is separated above by ~0.07 eV from the first excited hole-subband, corresponds to the deep-level state, residing at the position of ~0.75 eV far below the conduction band (i.e., near the valence band edge).

Tunable Rashba Spin Splitting in Two-Dimensional Polar Perovskites

Two-dimensional (2D) Rashba semiconductors with structure inversion asymmetry and a spin-orbit coupling (SOC) effect show promising applications in nanospintronics, such as spin field effect transistors (FETs). Here, we systematically investigate the electronic structures and Rashba effect of 2D polar perovskites ABX₃ (A = Cs⁺ or Rb⁺; B = Pb²⁺ or Sn²⁺; X = Cl, Br, or I) by first-principles density functional theory calculations. We demonstrate that, except for the cubic case, 2D polar perovskites from tetragonal and orthorhombic three-dimensional (3D) bulks exhibit a strong intrinsic Rashba effect around the Γ point, due to their structure inversion asymmetry and the strong SOC effect of heavy atoms. In particular, 2D orthorhombic RbSnI₃ shows the largest Rashba constant of 1.176 eV Å among these polar perovskites, which is comparable to that of 3D bulk perovskites previously reported in experiments and theory. Furthermore, several 2D polar perovskites also show a strong electric field response. In particular, 2D tetragonal RbPbI₃ and tetragonal CsPbI₃ have strong electric field responses of >0.5 e Ų. Therefore, 2D polar perovskites as promising Rashba semiconductors possess large Rashba constants and strong electric field responses, resulting in a short spin channel length of tens of nanometers to preserve the spin coherence in spin FETs, superior to conventional 3D micrometer spin FETs.

Two-Dimensional Giant Tunable Rashba Semiconductors with Two-Atom-Thick Buckled Honeycomb Structure

Spin field-effect transistors (SFETs) based on the Rashba effect could manipulate the spin of electrons electrically, while seeking desirable Rashba semiconductors with large Rashba constant and strong electric-field response, to preserve spin coherence remains a key challenge. Herein, we propose a series of 2D Rashba semiconductors with two-atom-thick buckled honeycomb structure (BHS) according to high-throughput first-principles density functional theory calculations. BHS semiconductors show large Rashba constants that are favorable to be integrated into nanodevices superior to conventional bulk materials, and they can be fabricated by mechanical exfoliation or chemical vapor deposition. In particular, 2D AlBi monolayer has the largest Rashba constant (2.77 eVÅ) of all 2D Rashba materials. Furthermore, 2D BiSb monolayer is a promising candidate for SFETs due to its large Rashba constant (1.94 eVÅ) and strong electric field response (0.92 eŲ). Our designed 2D-BiSb-SFET shows shorter spin channel length (42 nm with strain) than conventional SFETs (2-5 μm).

Highly Efficient Electric-Field Control of Giant Rashba Spin-Orbit Coupling in Lattice-Matched InSb/CdTe Heterostructures

Spin-orbit coupling (SOC), the relativistic effect describing the interaction between the orbital and spin degrees of freedom, provides an effective way to tailor the spin/magnetic orders using electrical means. Here, we report the manipulation of the spin-orbit interaction in the lattice-matched InSb/CdTe heterostructures. Owing to the energy band bending at the heterointerface, the strong Rashba effect is introduced to drive the spin precession where pronounced weak antilocalization cusps are observed up to 100 K. With effective quantum confinement and suppressed bulk conduction, the SOC strength is found to be enhanced by 75% in the ultrathin InSb/CdTe film. Most importantly, we realize the electric-field control of the interfacial Rashba effect using a field-effect transistor structure and demonstrate the gate-tuning capability which is 1-2 orders of magnitude higher than other materials. The adoption of the InSb/CdTe integration strategy may set up a general framework for the design of strongly spin-orbit coupled systems that are essential for CMOS-compatible low-power spintronics.

Rashba Effect in Functional Spintronic Devices

Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high-performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin-orbit torque devices. For spin field-effect transistors, the gate-voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all-electric spin field-effect transistors. For spin-orbit torque devices, recent theories and experiments on interface-generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed.

Swapping Exchange and Spin-Orbit Coupling in 2D van der Waals Heterostructures

The concept of swapping the two most important spin interactions-exchange and spin-orbit coupling-is proposed based on two-dimensional multilayer van der Waals heterostructures. Specifically, we show by performing realistic ab initio simulations, that a single device consisting of a bilayer graphene sandwiched by a 2D ferromagnet Cr_{2}Ge_{2}Te_{6} (CGT) and a monolayer WS_{2}, is able not only to generate, but also to swap the two interactions. The highly efficient swapping is enabled by the interplay of gate-dependent layer polarization in bilayer graphene and short-range spin-orbit and exchange proximity effects affecting only the layers in contact with the sandwiching materials. We call these structures ex-so-tic, for supplying either exchange (ex) or spin-orbit (so) coupling in a single device, by gating. Such bifunctional devices demonstrate the potential of van der Waals spintronics engineering using 2D crystal multilayers.

Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors

Spin relaxation, affected by interfacial effects, is a critical process for electrical spin injection and transport in semiconductor-based spintronics. In this work, the electrical spin injection into n-GaN via n-GaN/MgO/Co tunnel barrier was realized, and the interface-related spin relaxation was investigated by both electrical Hanle effect measurement and time-resolved Kerr rotation (TRKR) spectrum. It was found that the spin relaxation caused by interfacial random magnetostatic field was nearly equal to the intrinsic contributions at low temperature (less than 80 K) and could be suppressed by smoother n-GaN/Co interface. When the interfacial random magnetostatic field was suppressed, the spin relaxation time extracted from the electrical injection process was still shorter than that in bulk conduction band, which was attributed to Rashba spin-orbit coupling (SOC) induced by the interface band bending in the depletion region. Due to thermal activation, luckily, the spin relaxation induced by the interfacial Rashba SOC was suppressed at temperatures higher than 50 K. These results illustrate that (1) spin relaxation time could be as long as 300 ps for GaN and (2) the influences of interfacial effects could be engineered to further prolong spin relaxation time, both of which shed lights on GaN-based spintronic devices with direct and wide bandgap.

Electric Control of Fermi Arc Spin Transport in Individual Topological Semimetal Nanowires

The exotic topological surface states of Dirac or Weyl semimetals, namely Fermi arcs, are predicted to be spin polarized, while their spin polarization nature is still not revealed by transport measurements. Here, we report the spin-polarized transport in a Dirac semimetal Cd_{3}As_{2} nanowire employing the ferromagnetic electrodes for spin detection. The spin-up and spin-down states can be changed by reversing the current polarity, showing the spin-momentum locking property. Moreover, the nonlocal measurements show a high fidelity of the spin signals, indicating the topological protection nature of the spin transport. As tuning the Fermi level away from the Dirac point by gate voltages, the spin signals gradually decrease and finally are turned off, which is consistent with the fact that the Fermi arc surface state has the maximum ratio near the Dirac point and disappears above the Lifshitz transition point. Our results should be valuable for revealing the transport properties of the spin-polarized Fermi arc surface states in topological semimetals.

Ferroelectric Rashba semiconductors, AgBiP2X6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices

The electric and nonvolatile control of spin in semiconductors represents a fundamental step towards novel electronic devices. In this work, using first-principles calculations we investigate the electronic properties of AgBiP2X6 (X = S, Se, and Te) monolayers, which may be a new member of ferroelectric Rashba semiconductors due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the electric control of spin. The AgBiP2X6 monolayers are dynamically and thermodynamically stable up to room temperature. In the AgBiP2Te6 monolayer, the calculated band structure reveals the direct band-gap semiconducting nature in the presence of highly mobile two-dimensional electron gas near the Fermi level. The inclusion of spin-orbit coupling yields the giant Rashba-type spin splitting with a Rashba parameter of 6.5 eV Å, which is even comparable to that of some known bulk Rashba semiconductors. Except for the Rashba-type spin splitting, spin-orbit coupling together with inversion symmetry breaking also gives rise to valley polarization located at the edge of the conduction bands. The strength of the Rashba-type spin splitting and location of the conduction band minimum can be significantly tuned by applying the in-plane biaxial strain. Also, we demonstrate that these remarkable features can be retained in the presence of the BN substrate. The coexistence of the Rashba-type spin splitting (in-plane spin direction) and band splitting at the K/K' valleys (out-of-plane spin direction) makes the AgBiP2Te6 monolayer interesting for spintronics and valleytronics.

Single-photon emission from single-electron transport in a SAW-driven lateral light-emitting diode

The long-distance quantum transfer between electron-spin qubits in semiconductors is important for realising large-scale quantum computing circuits. Electron-spin to photon-polarisation conversion is a promising technology for achieving free-space or fibre-coupled quantum transfer. In this work, using only regular lithography techniques on a conventional 15 nm GaAs quantum well, we demonstrate acoustically-driven generation of single photons from single electrons, without the need for a self-assembled quantum dot. In this device, a single electron is carried in a potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single optical photon within 100 ps. This SAW-driven electroluminescence, without optimisation, yields photon antibunching with g⁽²⁾(0) = 0.39 ± 0.05 in the single-electron limit (g⁽²⁾(0) = 0.63 ± 0.03 in the raw histogram). Our work marks the first step towards electron-to-photon (spin-to-polarisation) qubit conversion for scaleable quantum computing architectures.

Electron-spin to photon-polarisation conversion is a promising technology for achieving free-space or fibre coupled quantum transfer. Here, the authors demonstrate acoustically-driven single photons from single electrons, without the need for self-assembled quantum dots, using a SAW-driven lateral n-i-p junction.

Demonstration of electron focusing using electronic lenses in low-dimensional system

We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate the characteristic of an asymmetrically gate biased quantum point contact with the assistance of a focusing lens. A correlation between the occurrence of conductance anomaly in low conductance regime and increase in FWHM of focusing peak is observed. The correlation is likely due to the electron-electron interaction. The reported electron focusing lens is essential for a more advanced electron optics device.

Janus TiXY Monolayers with Tunable Berry Curvature

Up to now, two-dimensional (2D) materials with both valley polarization and the Rashba effect are still rare. In this work, a new kind of Janus monolayers TiXY (X ≠ Y, X/Y = Cl, Br, I) is demonstrated to have physical properties of benefit for spintronics and valleytronics. In particular, Janus TiBrI shows Zeeman-type spin splitting of 70 meV, large Berry curvature of 106.22 bohr², and, at the same time, a large Rashba parameter of 147.95 meV Å. On the basis of k·p perturbation theory, we proposed that the Berry curvature can be adjusted by changing the lattice parameter, which will greatly improve the transverse velocities of carriers and promote the efficiency of the valley Hall device. Biaxial strain from -2.5 to 2.5% was applied on Janus TiBrI to verify the theory mentioned above, and a general relationship between the Berry curvature and lattice constant was obtained.

Band splitting with vanishing spin polarizations in noncentrosymmetric crystals

The Dresselhaus and Rashba effects are well-known phenomena in solid-state physics, in which spin–orbit coupling splits spin-up and spin-down energy bands of nonmagnetic non-centrosymmetric crystals. Here, we discuss a phenomenon we dub band splitting with vanishing spin polarizations (BSVSP), in which, as usual, spin-orbit coupling splits the energy bands in nonmagnetic non-centrosymmetric systems. Surprisingly, however, both split bands show no net spin polarization along certain high-symmetry lines in the Brillouin zone. In order to rationalize this phenomenon, we propose a classification of point groups into pseudo-polar and non-pseudo-polar groups. By means of first-principles simulations, we demonstrate that BSVSP can take place in both symmorphic (e.g., bulk GaAs) and non-symmorphic systems (e.g., two dimensional ferroelectric SnTe). Furthermore, we identify a linear magnetoelectric coupling in reciprocal space, which could be employed to tune the spin polarization with an external electric field. The BSVSP effect and its manipulation could therefore form the basis for future spintronic devices.

Spin-orbit couplings enable the electrical manipulation of spin degrees of freedom and so have a central role in spintronic devices. Here, the authors identify an unconventional spin-orbit effect in high-symmetry situations that leads to a linear magnetoelectric coupling in reciprocal space.

Vertical ferroelectric switching by in-plane sliding of two-dimensional bilayer WTe2

Based on first-principles calculations, we studied the ferroelectric properties of bilayer 1T'-WTe₂. In this work, we discovered that the polarization stems from uncompensated out-of-plane interlayer charge transfer, which can be switched upon interlayer sliding of an in-plane translation. Our differential charge density results also confirmed that such ferroelectricity in the bilayer WTe₂ is derived from interlayer charge transfer. The ferroelectric polarization directions further control the spin texture of the bilayer WTe₂, which may have important applications in spintronics. Therefore, we propose a spin field effect transistor (spin-FET) design that may effectively improve the spin-polarized injection rate. In addition, the lattice strain has been found to have an important influence on the ferroelectric properties of the bilayer WTe₂. One can effectively increase the polarization with a maximum at 3% tensile strain, whereas a 3% compressive strain can transform the bilayer WTe₂ from the ferroelectric to paraelectric phase.

Width dependence of the 0.5 × (2e2/h) conductance plateau in InAs quantum point contacts in presence of lateral spin-orbit coupling

The evolution of the 0.5G_o (G_o = 2e²/h) conductance plateau and the accompanying hysteresis loop in a series of asymmetrically biased InAs based quantum point contacts (QPCs) in the presence of lateral spin-orbit coupling (LSOC) is studied using a number of QPCs with varying lithographic channel width but fixed channel length. It is found that the size of the hysteresis loops is larger for QPCs of smaller aspect ratio (QPC channel width/length) and gradually disappears as their aspect ratio increases. The physical mechanisms responsible for a decrease in size of the hysteresis loops for QPCs with increasing aspect ratio are: (1) multimode transport in QPCs with larger channel width leading to spin-flip scattering events due to both remote impurities in the doping layer of the heterostructure and surface roughness and impurity (dangling bond) scattering on the sidewalls of the narrow portion of the QPC, and (2) an increase in carrier density resulting in a screening of the electron-electron interactions in the QPC channel. Both effects lead to a progressive disappearance of the net spin polarization in the QPC channel and an accompanying reduction in the size of the hysteresis loops as the lithographic width of the QPC channel increases.

Reversible Mapping and Sorting the Spin of Photons on the Nanoscale: A Spin-Optical Nanodevice

The photon spin is an important resource for quantum information processing as is the electron spin in spintronics. However, for subwavelength confined optical excitations, polarization as a global property of a mode cannot be defined. Here, we show that any polarization state of a plane-wave photon can reversibly be mapped to a pseudospin embodied by the two fundamental modes of a subwavelength plasmonic two-wire transmission line. We design a device in which this pseudospin evolves in a well-defined fashion throughout the device reminiscent of the evolution of photon polarization in a birefringent medium and the behavior of electron spins in the channel of a spin field-effect transistor. The significance of this pseudospin is enriched by the fact that it is subject to spin-orbit locking. Combined with optically active materials to exert external control over the pseudospin precession, our findings could enable spin-optical transistors, that is, the routing and processing of quantum information with light on a subwavelength scale.

Monolayer tellurenyne assembled with helical telluryne: structure and transport properties

Two-dimensional (2D) crystals are candidate materials for electronics and spintronics, but their deficient carrier mobility, inappreciable spin-orbit coupling effect, and environmental instability have such limited applications. Herein, using density functional theory methods, we propose a novel 2D monolayer material, named tellurenyne, built with an atomic tellurium chain (named telluryne) via a noncovalent bond. The comparable electrostatic and van der Waals contributions to interchain binding enable tellurenyne to exhibit remarkable stabilities and transport properties. The carrier mobility of tellurenyne is even higher than phosphorene, with the largest anisotropy among all known systems. Importantly, by changing the phase orders of one-dimensional telluryne, one can switch the preferred carrier type and rotate the dominant direction of carrier transport by 90°. Additionally, tellurenyne is found to exhibit Rashba spin splitting with the coupling parameter of 2.13 eV Å, belonging to the giant Rashba systems. Therefore, this novel 2D material, tellurenyne, is promising for applications in electronics and spintronics.

Ferromagnet-Free All-Electric Spin Hall Transistors

The spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.

Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime

Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crossover from weak localization to weak anti-localization in the magneto-resistance of a high-mobility two-dimensional hole gas in a strained germanium quantum well. From the magneto-resistance, we extract the phase-coherence time, spin-orbit precession time, spin-orbit energy splitting, and cubic Rashba coefficient over a wide density range. The mobility and the mean free path increase with increasing hole density, while the spin precession length decreases due to increasingly stronger spin-orbit coupling. As the density becomes larger than ∼6 × 1011 cm-2, the spin precession length becomes shorter than the mean free path, and the system enters the ballistic spin transport regime. We also report here the numerical methods and code developed for calculating the magneto-resistance in the ballistic regime, where the commonly used HLN and ILP models for analyzing weak localization and anti-localization are not valid. These results pave the way toward silicon-compatible spintronic devices.

Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors

Magneto-electronic logic is an innovative approach to performing high-efficiency computations. Additionally, the ultra-large scale integration requirement for computation strongly suggests exploiting magnetoresistance effects in non-magnetic semiconductor materials. Here, we demonstrate the magnetoresistance effect in a silicon nanowire field effect transistor (SNWT) fabricated by complementary metal-oxide-semiconductor (CMOS)-compatible technology. Our experimental results show that the sign and the magnitude of the magnetoresistance in SNWTs can be effectively controlled by the drain-source voltage and the gate-source voltage, respectively, playing the role of a multi-terminal tunable magnetoresistance device. Various current models are established and in good agreement with the experimental results that describe the impact of electrical voltage and magnetic field on magnetoresistance, which provides design feasibility for the high-density magneto-electronic circuit. Such findings will further pave the way for nanoscale silicon-based magneto-electronics logic devices and show a possible path beyond the developmental limits of CMOS logic.

Helical Hole State in Multiple Conduction Modes in Ge/Si Core/Shell Nanowire

Helical states, a prerequisite for the engineering of Majorana zero modes in solid-state systems, have recently been reported in the conduction band of III-V nanowires (NWs) subject to strong Rashba spin-orbit interaction. We report the observation of re-entrant conductance features consistent with the presence of helical hole states in multiple conduction modes of a Ge/Si core/shell NW. The Ge/Si system has several potential advantages over electron systems such as longer spin coherence time due to weaker coupling to nuclear spins and the possibility of isotope-purified materials for nuclear spin-free devices. We derive the Landé g factor of 3.6 from magneto-transport measurements, comparable to theoretical predictions and significantly larger when compared with that in strongly confined quantum dots. The spin-orbit energy is evaluated as ∼2.1 meV, on par with values in III-V NWs, showing good agreement with previous theoretical predictions and weak antilocalization measurements.