Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2

Chiral light detection with centrosymmetric-metamaterial-assisted valleytronics

The full-range, high-sensitivity and integratable detection of circularly polarized light (CPL) is critically important for quantum information processing, advanced imaging systems and optical sensing technologies. However, mainstream CPL detectors rely on chiral absorptive materials, and thus suffer from limited response wavelengths, low responsivity and poor discrimination ratios. Here we present a chiral light detector by utilizing valley materials to observe the spin angular momentum carried by chiral light. Delicately designed centrosymmetric metamaterials that can preserve the sign of optical spin angular momentum and greatly enhance its intensity in the near field are harnessed as a medium to inject polarized electrons into valley materials, which are then detected by the valley Hall effect. This enables high-sensitivity infrared CPL detection at room temperature by valleytronic transistors, and the detection wavelength is extended to the infrared. This approach opens pathways for chiral light detection and provides insights into potential applications of valleytronics in optoelectronic sensing.

Infrared Magnetopolaritons in MoTe_{2} Monolayers and Bilayers

MoTe_{2} monolayers and bilayers are unique within the family of van der Waals materials since they pave the way toward atomically thin infrared light-matter quantum interfaces, potentially reaching the important telecommunication windows. Here, we report emergent exciton polaritons based on MoTe_{2} monolayers and bilayers in a low-temperature open microcavity in a joint experiment-theory study. Our experiments clearly evidence both the enhanced oscillator strength and enhanced luminescence of MoTe_{2} bilayers, signified by a 38% increase of the Rabi splitting and a strongly enhanced relaxation of polaritons to low-energy states. The latter is distinct from polaritons in MoTe_{2} monolayers, which feature a bottlenecklike relaxation inhibition. Both the polaritonic spin valley locking in monolayers and the spin-layer locking in bilayers are revealed via the Zeeman effect, which we map and control via the light-matter composition of our polaritonic resonances.

Predictable Gate-Field Control of Spin in Altermagnets with Spin-Layer Coupling

Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control through the electric field is generally more practical, and has become a focal point in the field. Here, we propose a mechanism to realize static and almost uniform effective magnetic field by gate-electric field. Our method employs two-dimensional altermagnets with valley-mediated spin-layer coupling (SLC), in which electronic states display valley-contrasted spin and layer polarization. For the low-energy valley electrons, a uniform gate field is approximately identical to a uniform magnetic field, leading to predictable control of spin. Through symmetry analysis and ab initio calculations, we predict altermagnetic monolayer Ca(CoN)_{2} and its family materials as potential candidates hosting SLC. We show that an almost uniform magnetic field (B_{z}) indeed is generated by gate field (E_{z}) in Ca(CoN)_{2} with B_{z}∝E_{z} in a wide range, and B_{z} reaches as high as about 10^{3}  T when E_{z}=0.2  eV/Å. Furthermore, owing to the clean band structure and SLC, one can achieve perfect and switchable spin and valley currents and significant tunneling magnetoresistance in Ca(CoN)_{2} solely using the gate field. Our work provides new opportunities to generate predictable control of spin and design spintronic devices that can be controlled by purely electric means.

Giant Faraday rotation in atomically thin semiconductors

Faraday rotation is a fundamental effect in the magneto-optical response of solids, liquids and gases. Materials with a large Verdet constant find applications in optical modulators, sensors and non-reciprocal devices, such as optical isolators. Here, we demonstrate that the plane of polarization of light exhibits a giant Faraday rotation of several degrees around the A exciton transition in hBN-encapsulated monolayers of WSe2 and MoSe2 under moderate magnetic fields. This results in the highest known Verdet constant of -1.9 × 107 deg T-1 cm-1 for any material in the visible regime. Additionally, interlayer excitons in hBN-encapsulated bilayer MoS2 exhibit a large Verdet constant (VIL ≈ +2 × 105 deg T-1 cm-2) of opposite sign compared to A excitons in monolayers. The giant Faraday rotation is due to the giant oscillator strength and high g-factor of the excitons in atomically thin semiconducting transition metal dichalcogenides. We deduce the complete in-plane complex dielectric tensor of hBN-encapsulated WSe2 and MoSe2 monolayers, which is vital for the prediction of Kerr, Faraday and magneto-circular dichroism spectra of 2D heterostructures. Our results pose a crucial advance in the potential usage of two-dimensional materials in ultrathin optical polarization devices.

Room-Temperature Magnetic-Induced Circularly Polarized Photoluminescence in Two-Dimensional Er2O2S

Two-dimensional (2D) materials with spin polarization have great potential for achieving next-generation spintronic applications. However, spin polarization of 2D materials is usually produced at a cryogenic temperature because of thermal fluctuations, which severely hinder their further applications. Here, we report room-temperature intrinsic magnetic-induced circularly polarized photoluminescence (PL) in 2D Er2O2S flakes. The geff factor of 2D Er2O2S stays at around -6.3 from the liquid He temperature limit to room temperature, which is independent of temperature. This anomalous phenomenon in Er2O2S is totally different from previous materials, which all have a decreasing Zeeman splitting with increasing temperature resulting from thermal fluctuations. The anomalous temperature-dependent magnetic-induced circularly polarized PL originates from the weak electron-phonon coupling in 2D Er2O2S, which has been proven by both the temperature-dependent Raman and theoretical calculations. This work sheds light on the understanding and manipulation of 2D materials for practical spintronic applications.

Strain engineering of Zeeman and Rashba effects in transition metal dichalcogenide nanotubes and their Janus variants: anab initiostudy

We study the influence of mechanical deformations on the Zeeman and Rashba effects in transition metal dichalcogenide nanotubes and their Janus variants from first principles. In particular, we perform symmetry-adapted density functional theory simulations with spin-orbit coupling to determine the variation in the electronic band structure splittings with axial and torsional deformations. We find significant effects in molybdenum and tungsten nanotubes, for which the Zeeman splitting decreases with increase in strain, going to zero for large enough tensile/shear strains, while the Rashba splitting coefficient increases linearly with shear strain, while being zero for all tensile strains, a consequence of the inversion symmetry remaining unbroken. In addition, the Zeeman splitting is relatively unaffected by nanotube diameter, whereas the Rashba coefficient decreases with increase in diameter. Overall, mechanical deformations represent a powerful tool for spintronics in nanotubes.

Moiré-Assisted Realization of Octahedral MoTe2 Monolayer

A current key challenge in 2D materials is the realization of emergent quantum phenomena in hetero structures via controlling the moiré potential created by the periodicity mismatch between adjacent layers, as highlighted by the discovery of superconductivity in twisted bilayer graphene. Generally, the lattice structure of the original host material remains unchanged even after the moiré superlattice is formed. However, much less attention is paid for the possibility that the moiré potential can also modify the original crystal structure itself. Here, it is demonstrated that octahedral MoTe2 which is unstable in bulk is stabilized in a commensurate MoTe2 /graphene hetero-bilayer due to the moiré potential created between the two layers. It is found that the reconstruction of electronic states via the moiré potential is responsible for this stabilization, as evidenced by the energy-gap opening at the Fermi level observed by angle-resolved photoemission and scanning tunneling spectroscopies. The present results provide a fresh approach to realize novel 2D quantum phases by utilizing the moiré potential.

Strained Monolayer MoTe2 as a Photon Absorber in the Telecom Range

To achieve the atomistic control of two-dimensional materials for emerging technological applications, such as valleytronics, spintronics, and single-photon emission, it is of paramount importance to gain an in-depth understanding of their structure-property relationships. In this work, we present a systematic analysis, carried out in the framework of density-functional theory, on the influence of uniaxial strain on the electronic and optical properties of monolayer MoTe2. By spanning a ±10% range of deformation along the armchair and zigzag direction of the two-dimensional sheet, we inspect how the fundamental gap, the dispersion of the bands, the frontier states, and the charge distribution are affected by strain. Under tensile strain, the system remains a semiconductor but a direct-to-indirect band gap transition occurs above 7%. Compressive strain, instead, is highly direction-selective. When it is applied along the armchair edge, the material remains a semiconductor, while along the zigzag direction a semiconductor-to-metal transition happens above 8%. The characteristics of the fundamental gap and wave function distribution are also largely dependent on the strain direction, as demonstrated by a thorough analysis of the band structure and of the charge density. Additional ab initio calculations based on many-body perturbation theory confirm the ability of strained MoTe2 to absorb radiation in the telecom range, thus suggesting the application of this material as a photon absorber upon suitable strain modulation.

Ferromagnetism emerged from non-ferromagnetic atomic crystals

The recently emerged ferromagnetic two-dimensional (2D) materials provide unique platforms for compact spintronic devices down to the atomic-thin regime; however, the prospect is hindered by the limited number  of ferromagnetic 2D materials discovered with limited choices of magnetic properties. If 2D antiferromagnetism could be converted to 2D ferromagnetism, the range of 2D magnets and their potential applications would be significantly broadened. Here, we discovered emergent ferromagnetism by interfacing non-magnetic WS₂ layers with the antiferromagnetic FePS₃. The WS₂ exhibits an order of magnitude enhanced Zeeman effect with a saturated interfacial exchange field ~38 Tesla. Given the pristine FePS₃ is an intralayer antiferromagnet, the prominent interfacial exchange field suggests the formation of ferromagnetic FePS₃ at interface. Furthermore, the enhanced Zeeman effect in WS₂ is found to exhibit a strong WS₂-thickness dependence, highlighting the layer-tailorable interfacial exchange coupling in WS₂-FePS₃ heterostructures, which is potentially attributed to the thickness-dependent interfacial hybridization.

Magnetoelectric tuning of spin, valley, and layer-resolved anomalous Nernst effect in transition-metal dichalcogenides bilayers

The anomalous Nernst coefficient (ANC) for transition-metal dichalcogenide (TMD) bilayers is studied with a focus on the interplay between layer pseudospin, spin, and valley degrees of freedom when electric and exchange fields are present. Breaking the inversion and time reversal symmetries via respectively electric and exchange fields results for bilayer TMDs in a spin-valley-layer polarized total ANC. Conditions are determined for controlling the spin, valley, and layer-resolved contributions via electric field tuning. Our results demonstrate the control of layer degree of freedom in bilayer TMDs magnetoelectrically which is of relevance for possible applications in spin/valley caloritronics.

Impact of indirect transitions on valley polarization in WS2 and WSe2

Controlling the momentum of carriers in semiconductors, known as valley polarization, is a new resource for optoelectronics and information technologies. Materials exhibiting high polarization are needed for valley-based devices. Few-layer WS₂ shows a remarkable spin-valley polarization above 90%, even at room temperature. In stark contrast, polarization is absent for few-layer WSe₂ despite the expected material similarities. Here, we explain the origin of valley polarization in both materials based on the interplay between two indirect optical transitions. We show that the relative energy minima at the Λ- and K-valleys in the conduction band determine the spin-valley polarization of the direct K-K transition. Polarization appears as the energy of the K-valley rises above the Λ-valley as a function of temperature and number of layers. Our results advance the understanding of the high spin-valley polarization in WS₂. This insight will impact the design of both passive and tunable valleytronic devices operating at room temperature.

Prolonging valley polarization lifetime through gate-controlled exciton-to-trion conversion in monolayer molybdenum ditelluride

Monolayer 2D semiconductors provide an attractive option for valleytronics due to valley-addressability. But the short valley-polarization lifetimes for excitons have hindered potential valleytronic applications. In this paper, we demonstrate a strategy for prolonging the valley-polarization lifetime by converting excitons to trions through efficient gate control and exploiting the much longer valley-polarization lifetimes for trions than for excitons. At charge neutrality, the valley lifetime of monolayer MoTe₂ increases by a factor of 1000 to the order of nanoseconds from excitons to trions. The exciton-to-trion conversion changes the dominant depolarization mechanism from the fast electron-hole exchange for excitons to the slow spin-flip process for trions. Moreover, the degree of valley polarization increases to 38% for excitons and 33% for trions through electrical manipulation. Our results reveal the depolarization dynamics and the interplay of various depolarization channels for excitons and trions, providing an effective strategy for prolonging the valley polarization.

Here, the authors devise a strategy for prolonging the valley polarization lifetime in monolayer MoTe₂ by converting excitons to trions through gate control, and by taking advantage of the longer valley polarization lifetime of trions.

Selective Growth and Robust Valley Polarization of Bilayer 3R-MoS2

Noncentrosymmetric transition-metal dichalcogenides, particularly their 3R polymorphs, provide a robust setting for valleytronics. Here, we report on the selective growth of monolayers and bilayers of MoS₂, which were acquired from two closely but differently oriented substrates in a chemical vapor deposition reactor. It turns out that as-grown bilayers are predominantly 3R-type, not more common 2H-type, as verified by microscopic and spectroscopic characterization. As expected, the 3R bilayer showed a significantly higher valley polarization compared with the centrosymmetric 2H bilayer, which undergoes efficient interlayer scattering across contrasting valleys because of their vertical alignment of the K and K' points in momentum space. Interestingly, the 3R bilayer showed even higher valley polarization compared with the monolayer counterpart. Moreover, the 3R bilayer reasonably maintained its valley efficiency over a very wide range of excitation power density from ∼0.16 kW/cm² to ∼0.16 MW/cm² at both low and room temperatures. These observations are rather surprising because valley dephasing could be more efficient in the bilayer via both interlayer and intralayer scatterings, whereas only intralayer scattering is allowed in the monolayer. The improved valley polarization of the 3R bilayer can be attributed to its indirect-gap nature, where valley-polarized excitons can relax into the valley-insensitive band edge, which otherwise scatter into the contrasting valley to effectively cancel out the initial valley polarization. Our results provide a facile route for the growth of 3R-MoS₂ bilayers that could be utilized as a platform for advancing valleytronics.

Valley polarization caused by crystalline symmetry breaking

In two-dimensional (2D) hexagonal lattices with inversion asymmetry, time-reversal (T) connected valleys are at the center of current valleytronic research. In order to trigger valley polarization, dynamical processes and/or magnetism have been considered. In this work, we propose a new mechanism, valley-contrasting sublattice polarization (VCSP), to polarize valleys by reducing the crystalline symmetry that connects the valleys. In our mechanism, significant valley polarization could be readily generated without magnetism, an electric field, or an optical process. Based on tight-binding model analysis and first-principle calculations, the control of valley polarization via crystalline symmetry can be successfully realized in concrete LaOBiS₂ polytypes with Peierls-like structure distortion. Our results provide an unprecedented possibility for exploring valley-contrasting physics.

Gate-controlled spin-valley-layer locking in bilayer transition-metal dichalcogenides

The interplay between various internal degrees of freedom of electrons is of fundamental importance for designing high performance electronic devices. A particular instance of this interplay can be observed in bilayer TMDs due to the combined effect of spin-orbit and interlayer couplings. We study the transport of spin, valley and layer pseudospin, generally, through a magnetoelectric barrier in AB-stacked bilayer TMDs and demonstrate an electrically controllable platform for multifunctional and ultra-high-speed logic devices. Perfect spin and valley polarizations as well as good layer localization of electrons occur in a rather large range of Fermi energies for moderate electric and magnetic fields. Any number of these polarizations can be inverted by adjusting the two potential gates on the two layers. Furthermore, the conditions for the excellent polarizations are determined for the spin, valley and layer degrees of freedom, in terms of the adjustable system parameters. We discuss the individual electric and magnetic barriers and show that the single electric barrier acts as a bipolar pseudospin semiconductor with opposite polarizations for the conduction and valence bands. The results of this study pave the way for multifunctional pseudospintronic applications based on 2D materials.

Room temperature near unity spin polarization in 2D Van der Waals heterostructures

The generation and manipulation of spin polarization at room temperature are essential for 2D van der Waals (vdW) materials-based spin-photonic and spintronic applications. However, most of the high degree polarization is achieved at cryogenic temperatures, where the spin-valley polarization lifetime is increased. Here, we report on room temperature high-spin polarization in 2D layers by reducing its carrier lifetime via the construction of vdW heterostructures. A near unity degree of polarization is observed in PbI2 layers with the formation of type-I and type-II band aligned vdW heterostructures with monolayer WS2 and WSe2. We demonstrate that the spin polarization is related to the carrier lifetime and can be manipulated by the layer thickness, temperature, and excitation wavelength. We further elucidate the carrier dynamics and measure the polarization lifetime in these heterostructures. Our work provides a promising approach to achieve room temperature high-spin polarizations, which contribute to spin-photonics applications.

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.

Enhanced Valley Zeeman Splitting in Fe-Doped Monolayer MoS2

The "Zeeman effect" offers unique opportunities for magnetic manipulation of the spin degree of freedom (DOF). Recently, valley Zeeman splitting, referring to the lifting of valley degeneracy, has been demonstrated in two-dimensional transition metal dichalcogenides (TMDs) at liquid helium temperature. However, to realize the practical applications of valley pseudospins, the valley DOF must be controllable by a magnetic field at room temperature, which remains a significant challenge. Magnetic doping in TMDs can enhance the Zeeman splitting; however, to achieve this experimentally is not easy. Here, we report unambiguous magnetic manipulation of valley Zeeman splitting at 300 K (g_eff = -6.4) and 10 K (g_eff = -11) in a CVD-grown Fe-doped MoS₂ monolayer; the effective Landé g_eff factor can be tuned to -20.7 by increasing the Fe dopant concentration, which represents an approximately 5-fold enhancement as compared to undoped MoS₂. Our measurements and calculations reveal that the enhanced splitting and g_eff factors are due to the Heisenberg exchange interaction of the localized magnetic moments (Fe 3d electrons) with MoS₂ through the d-orbital hybridization.

Valley-Layer Coupling: A New Design Principle for Valleytronics

The current valleytronics research is based on the paradigm of time-reversal-connected valleys in two-dimensional (2D) hexagonal materials, which forbids the fully electric generation of valley polarization by a gate field. Here, we go beyond the existing paradigm to explore 2D systems with a novel valley-layer coupling (VLC) mechanism, where the electronic states in the emergent valleys have a valley-contrasted layer polarization. The VLC enables a direct coupling between a valley and a gate electric field. We analyze the symmetry requirements for a system to host VLC, demonstrate our idea via first-principles calculations and model analysis of a concrete 2D material example, and show that an electric, continuous, wide-range, and switchable control of valley polarization can be achieved by VLC. Furthermore, we find that systems with VLC can exhibit other interesting physics, such as valley-contrasting linear dichroism and optical selection of the valley and the electric polarization of interlayer excitons. Our finding opens a new direction for valleytronics and 2D materials research.

Momentum-Dark Intervalley Exciton in Monolayer Tungsten Diselenide Brightened via Chiral Phonon

Inversion symmetry breaking and 3-fold rotation symmetry grant the valley degree of freedom to the robust exciton in monolayer transition-metal dichalcogenides, which can be exploited for valleytronics applications. However, the short lifetime of the exciton significantly constrains the possible applications. In contrast, the dark exciton could be long-lived but does not necessarily possess the valley degree of freedom. In this work, we report the identification of the momentum-dark, intervalley exciton in monolayer WSe₂ through low-temperature magneto-photoluminescence spectra. Interestingly, the intervalley exciton is brightened through the emission of a chiral phonon at the corners of the Brillouin zone (K point), and the pseudoangular momentum of the phonon is transferred to the emitted photon to preserve the valley information. The chiral phonon energy is determined to be ∼23 meV, based on the experimentally extracted exchange interaction (∼7 meV), in excellent agreement with the theoretical expectation of 24.6 meV. The long-lived intervalley exciton with valley degree of freedom adds an exciting quasiparticle for valleytronics, and the coupling between the chiral phonon and intervalley exciton furnishes a venue for valley spin manipulation.

Direct Observation of Gate-Tunable Dark Trions in Monolayer WSe2

Spin-forbidden intravalley dark excitons in tungsten-based transition-metal dichalcogenides (TMDCs), because of their unique spin texture and long lifetime, have attracted intense research interest. Here, we show that we can control the dark exciton electrostatically by dressing it with one free electron or free hole, forming the dark trions. The existence of the dark trions is suggested by the unique magneto-photoluminescence spectroscopy pattern of the boron nitride (BN)-encapsulated monolayer WSe₂ device at low temperature. The unambiguous evidence of the dark trions is further obtained by directly resolving the radiation pattern of the dark trions through back focal plane imaging. The dark trions possess a binding energy of ∼15 meV, and they inherit the long lifetime and large g-factor from the dark exciton. Interestingly, under the out-of-plane magnetic field, dressing the dark exciton with one free electron or hole results in distinctively different valley polarization of the emitted photon, as a result of the different intervalley scattering mechanism for the electron and hole. Finally, the lifetime of the positive dark trion can be further tuned from ∼50 ps to ∼215 ps by controlling the gate voltage. The gate-tunable dark trions usher in new opportunities for excitonic optoelectronics and valleytronics.

Atomic Insights into Phase Evolution in Ternary Transition-Metal Dichalcogenides Nanostructures

Phase engineering through chemical modification can significantly alter the properties of transition-metal dichalcogenides, and allow the design of many novel electronic, photonic, and optoelectronics devices. The atomic-scale mechanism underlying such phase engineering is still intensively investigated but elusive. Here, advanced electron microscopy, combined with density functional theory calculations, is used to understand the phase evolution (hexagonal 2H→monoclinic T'→orthorhombic T_d ) in chemical vapor deposition grown Mo_1-x W _x Te₂ nanostructures. Atomic-resolution imaging and electron diffraction indicate that Mo_1-x W _x Te₂ nanostructures have two phases: the pure monoclinic phase in low W-concentrated (0 < x ≤ 10 at.%) samples, and the dual phase of the monoclinic and orthorhombic in high W-concentrated (10 < x < 90 at.%) samples. Such phase coexistence exists with coherent interfaces, mediated by a newly uncovered orthorhombic phase T_d '. T_d ', preserves the centrosymmetry of T' and provides the possible phase transition path for T'→T_d with low energy state. This work enriches the atomic-scale understanding of phase evolution and coexistence in multinary compounds, and paves the way for device applications of new transition-metal dichalcogenides phases and heterostructures.

Non-contact identification and differentiation of illicit drugs using fluorescent films

Sensitive and rapid identification of illicit drugs in a non-contact mode remains a challenge for years. Here we report three film-based fluorescent sensors showing unprecedented sensitivity, selectivity, and response speed to the existence of six widely abused illicit drugs, including methamphetamine (MAPA), ecstasy, magu, caffeine, phenobarbital (PB), and ketamine in vapor phase. Importantly, for these drugs, the sensing can be successfully performed after 5.0 × 10⁵, 4.0 × 10⁵, 2.0 × 10⁵, 1.0 × 10⁵, 4.0 × 10⁴, and 2.0 × 10² times dilution of their saturated vapor with air at room temperature, respectively. Also, presence of odorous substances (toiletries, fruits, dirty clothes, etc.), water, and amido-bond-containing organic compounds (typical organic amines, legal drugs, and different amino acids) shows little effect upon the sensing. More importantly, discrimination and identification of them can be realized by using the sensors in an array way. Based upon the discoveries, a conceptual, two-sensor based detector is developed, and non-contact detection of the drugs is realized.

Sensitive and rapid identification of illicit drugs in a non-contact mode remains a challenge. Here, the authors report three film-based fluorescent sensors showing remarkable sensitivity, selectivity and response speed to six widely abused illicit drugs in vapor phase.