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Shiba K, Saito K, Minami K, Arai S, Yoshikawa G, Sun L, Tenjimbayashi M. Syneresis-Driven Self-Refilling Printing of Geometry/Component-Controlled Nano/Microstructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2405151. [PMID: 39206839 DOI: 10.1002/advs.202405151] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2024] [Revised: 07/15/2024] [Indexed: 09/04/2024]
Abstract
Nano/microfabrication is of fundamental importance both in scientific and industrial situations. There are, therefore, many attempts at realizing easier, quicker, and more precise fabrication of various structures; however, achieving this aim without a bulky and costly setup is still challenging. Here, we introduce a facile and versatile means of printing an ordered structure consisting of nanoscale stripes and more complicated geometries including pillars and wavy form with a lateral resolution of single micrometers. To this end, we prepare a polydimethylsiloxane (PDMS) slab with an oxygen plasma-induced wrinkled surface where liquid PDMS exudes by syneresis. Since this liquid PDMS is automatically loaded, the printing is repeatable without inking. A substrate moderately wettable to the liquid PDMS as well as amount/property-controlled syneresis is primarily important for the creation of well-defined structures. Precisely controlling these conditions will make this method universally applicable to diverse substrates and liquids including suspensions.
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Grants
- 21H01971 Grant-in-Aid for Scientific Research (B), JSPS, MEXT, Japan
- 24K01520 Grant-in-Aid for Scientific Research (B), JSPS, MEXT, Japan
- JSPS
- 21K18859 Grant-in-Aid for Challenging Research (Exploratory), JSPS, MEXT, Japan
- JPMJPR23N1 Japan Science and Technology Agency
- JP19KK0141 Fund for the Promotion of Joint International Research, International Collaborative Research, JSPS, MEXT, Japan
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Affiliation(s)
- Kota Shiba
- Research Center for Macromolecules and Biomaterials (RCMB), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Kayoko Saito
- Research Center for Macromolecules and Biomaterials (RCMB), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Kosuke Minami
- Research Center for Macromolecules and Biomaterials (RCMB), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Shunto Arai
- Research Center for Macromolecules and Biomaterials (RCMB), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Genki Yoshikawa
- Research Center for Macromolecules and Biomaterials (RCMB), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
- Materials Science and Engineering, Graduate School of Pure and Applied Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8571, Japan
| | - Luyi Sun
- Polymer Program, Institute of Materials Science and Department of Chemical & Biomolecular Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Mizuki Tenjimbayashi
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
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Kim GY, Kim S, Park KH, Jang H, Kim M, Nam TW, Song KM, Shin H, Park Y, Cho Y, Yeom J, Choi MJ, Jang MS, Jung YS. Chiral 3D structures through multi-dimensional transfer printing of multilayer quantum dot patterns. Nat Commun 2024; 15:6996. [PMID: 39143052 PMCID: PMC11324731 DOI: 10.1038/s41467-024-51179-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Accepted: 07/31/2024] [Indexed: 08/16/2024] Open
Abstract
Three-dimensional optical nanostructures have garnered significant interest in photonics due to their extraordinary capabilities to manipulate the amplitude, phase, and polarization states of light. However, achieving complex three-dimensional optical nanostructures with bottom-up fabrication has remained challenging, despite its nanoscale precision and cost-effectiveness, mainly due to inherent limitations in structural controllability. Here, we report the optical characteristics of intricate two- and three-dimensional nanoarchitectures made of colloidal quantum dots fabricated with multi-dimensional transfer printing. Our customizable fabrication platform, directed by tailored interface polarity, enables flexible geometric control over a variety of one-, two-, and three-dimensional quantum dot architectures, achieving tunable and advanced optical features. For example, we demonstrate a two-dimensional quantum dot nanomesh with tuned subwavelength square perforations designed by finite-difference time-domain calculations, achieving an 8-fold enhanced photoluminescence due to the maximized optical resonance. Furthermore, a three-dimensional quantum dot chiral structure is also created via asymmetric stacking of one-dimensional quantum dot layers, realizing a pronounced circular dichroism intensity exceeding 20°.
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Affiliation(s)
- Geon Yeong Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Shinho Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Ki Hyun Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Moohyun Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Tae Won Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Kyeong Min Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Hongjoo Shin
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Yemin Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Yeongin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Jihyeon Yeom
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Min-Jae Choi
- Department of Chemical and Biochemical Engineering, Dongguk University, Pildong-ro 1-gil, Jung-gu, Seoul, Republic of Korea.
| | - Min Seok Jang
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea.
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea.
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Lee J, Jo H, Choi M, Park S, Oh J, Lee K, Bae Y, Rhee S, Roh J. Recent Progress on Quantum Dot Patterning Technologies for Commercialization of QD-LEDs: Current Status, Future Prospects, and Exploratory Approaches. SMALL METHODS 2024; 8:e2301224. [PMID: 38193264 DOI: 10.1002/smtd.202301224] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 11/25/2023] [Indexed: 01/10/2024]
Abstract
Colloidal quantum dots (QDs) are widely regarded as advanced emissive materials with significant potential for display applications owing to their excellent optical properties such as high color purity, near-unity photoluminescence quantum yield, and size-tunable emission color. Building upon these attractive attributes, QDs have successfully garnered attention in the display market as down-conversion luminophores and now venturing into the realm of self-emissive displays, exemplified by QD light-emitting diodes (QD-LEDs). However, despite these advancements, there remains a relatively limited body of research on QD patterning technologies, which are crucial prerequisites for the successful commercialization of QD-LEDs. Thus, in this review, an overview of the current status and prospects of QD patterning technologies to accelerate the commercialization of QD-LEDs is provided. Within this review, a comprehensive investigation of three prevailing patterning methods: optical lithography, transfer printing, and inkjet printing are conducted. Furthermore, several exploratory QD patterning techniques that offer distinct advantages are introduced. This study not only paves the way for successful commercialization but also extends the potential application of QD-LEDs into uncharted frontiers.
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Affiliation(s)
- Jaeyeop Lee
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Hyeona Jo
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Minseok Choi
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Sangwook Park
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Jiyoon Oh
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Kyoungeun Lee
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Yeyun Bae
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Seunghyun Rhee
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
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4
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Kim J, Roh J, Park M, Lee C. Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2212220. [PMID: 36853911 DOI: 10.1002/adma.202212220] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Revised: 02/21/2023] [Indexed: 06/18/2023]
Abstract
Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.
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Affiliation(s)
- Jaehoon Kim
- Department of Energy and Mineral Resources Engineering, Dong-A University, Busan, 49315, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Myoungjin Park
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| | - Changhee Lee
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
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5
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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6
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Jambhulkar S, Ravichandran D, Zhu Y, Thippanna V, Ramanathan A, Patil D, Fonseca N, Thummalapalli SV, Sundaravadivelan B, Sun A, Xu W, Yang S, Kannan AM, Golan Y, Lancaster J, Chen L, Joyee EB, Song K. Nanoparticle Assembly: From Self-Organization to Controlled Micropatterning for Enhanced Functionalities. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306394. [PMID: 37775949 DOI: 10.1002/smll.202306394] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Revised: 09/02/2023] [Indexed: 10/01/2023]
Abstract
Nanoparticles form long-range micropatterns via self-assembly or directed self-assembly with superior mechanical, electrical, optical, magnetic, chemical, and other functional properties for broad applications, such as structural supports, thermal exchangers, optoelectronics, microelectronics, and robotics. The precisely defined particle assembly at the nanoscale with simultaneously scalable patterning at the microscale is indispensable for enabling functionality and improving the performance of devices. This article provides a comprehensive review of nanoparticle assembly formed primarily via the balance of forces at the nanoscale (e.g., van der Waals, colloidal, capillary, convection, and chemical forces) and nanoparticle-template interactions (e.g., physical confinement, chemical functionalization, additive layer-upon-layer). The review commences with a general overview of nanoparticle self-assembly, with the state-of-the-art literature review and motivation. It subsequently reviews the recent progress in nanoparticle assembly without the presence of surface templates. Manufacturing techniques for surface template fabrication and their influence on nanoparticle assembly efficiency and effectiveness are then explored. The primary focus is the spatial organization and orientational preference of nanoparticles on non-templated and pre-templated surfaces in a controlled manner. Moreover, the article discusses broad applications of micropatterned surfaces, encompassing various fields. Finally, the review concludes with a summary of manufacturing methods, their limitations, and future trends in nanoparticle assembly.
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Affiliation(s)
- Sayli Jambhulkar
- Systems Engineering, School of Manufacturing Systems and Networks (MSN), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
| | - Dharneedar Ravichandran
- Manufacturing Engineering, School of Manufacturing Systems and Networks (MSN), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
| | - Yuxiang Zhu
- Manufacturing Engineering, School of Manufacturing Systems and Networks (MSN), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
| | - Varunkumar Thippanna
- Manufacturing Engineering, School of Manufacturing Systems and Networks (MSN), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
| | - Arunachalam Ramanathan
- Manufacturing Engineering, School of Manufacturing Systems and Networks (MSN), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
| | - Dhanush Patil
- Manufacturing Engineering, School of Manufacturing Systems and Networks (MSN), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
| | - Nathan Fonseca
- Manufacturing Engineering, School of Manufacturing Systems and Networks (MSN), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
| | - Sri Vaishnavi Thummalapalli
- Manufacturing Engineering, School of Manufacturing Systems and Networks (MSN), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
| | - Barath Sundaravadivelan
- Department of Mechanical and Aerospace Engineering, School for Engineering of Matter, Transport & Energy, Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Tempe, AZ, 85281, USA
| | - Allen Sun
- Department of Chemistry, Stony Brook University, Stony Brook, NY, 11794, USA
| | - Weiheng Xu
- Systems Engineering, School of Manufacturing Systems and Networks (MSN), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
| | - Sui Yang
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy (SEMTE), Arizona State University (ASU), Tempe, AZ, 85287, USA
| | - Arunachala Mada Kannan
- The Polytechnic School (TPS), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
| | - Yuval Golan
- Department of Materials Engineering and the Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer Sheva, 8410501, Israel
| | - Jessica Lancaster
- Department of Immunology, Mayo Clinic Arizona, 13400 E Shea Blvd, Scottsdale, AZ, 85259, USA
| | - Lei Chen
- Mechanical Engineering, University of Michigan-Dearborn, 4901 Evergreen Rd, Dearborn, MI, 48128, USA
| | - Erina B Joyee
- Mechanical Engineering and Engineering Science, University of North Carolina, Charlotte, 9201 University City Blvd, Charlotte, NC, 28223, USA
| | - Kenan Song
- School of Environmental, Civil, Agricultural, and Mechanical Engineering (ECAM), College of Engineering, University of Georgia (UGA), Athens, GA, 30602, USA
- Adjunct Professor of School of Manufacturing Systems and Networks (MSN), Ira A. Fulton Schools of Engineering, Arizona State University (ASU), Mesa, AZ, 85212, USA
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7
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Chen Z, Li H, Yuan C, Gao P, Su Q, Chen S. Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies. SMALL METHODS 2024; 8:e2300359. [PMID: 37357153 DOI: 10.1002/smtd.202300359] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2023] [Revised: 05/15/2023] [Indexed: 06/27/2023]
Abstract
Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.
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Affiliation(s)
- Zinan Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Haotao Li
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Cuixia Yuan
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Peili Gao
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Qiang Su
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Shuming Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
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8
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Qie Y, Hu H, Yu K, Zhong C, Ju S, Liu Y, Guo T, Li F. Ligand-Nondestructive Direct Photolithography Assisted by Semiconductor Polymer Cross-Linking for High-Resolution Quantum Dot Light-Emitting Diodes. NANO LETTERS 2024; 24:1254-1260. [PMID: 38230959 DOI: 10.1021/acs.nanolett.3c04230] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
The photolithographic patterning of fine quantum dot (QD) films is of great significance for the construction of QD optoelectronic device arrays. However, the photolithography methods reported so far either introduce insulating photoresist or manipulate the surface ligands of QDs, each of which has negative effects on device performance. Here, we report a direct photolithography strategy without photoresist and without engineering the QD surface ligands. Through cross-linking of the surrounding semiconductor polymer, QDs are spatially confined to the network frame of the polymer to form high-quality patterns. More importantly, the wrapped polymer incidentally regulates the energy levels of the emitting layer, which is conducive to improving the hole injection capacity while weakening the electron injection level, to achieve balanced injection of carriers. The patterned QD light-emitting diodes (with a pixel size of 1.5 μm) achieve a high external quantum efficiency of 16.25% and a brightness of >1.4 × 105 cd/m2. This work paves the way for efficient high-resolution QD light-emitting devices.
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Affiliation(s)
- Yuan Qie
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Hailong Hu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
| | - Kuibao Yu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Chao Zhong
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Songman Ju
- College of Physical Science and Technology, Dalian University, Dalian 116622, P. R. China
| | - Yanbing Liu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Tailiang Guo
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
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9
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Wang Z, Dong S, Yuan W, Li J, Ma X, Liu F, Jiang X. Photo-Modulated Ionic Polymer as an Adaptable Electron Transport Material for Optically Switchable Pixel-Free Displays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309593. [PMID: 37967857 DOI: 10.1002/adma.202309593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2023] [Revised: 11/06/2023] [Indexed: 11/17/2023]
Abstract
In addition to electrically driven organic light-emitting diode (OLED) displays that rely on complicated and costly circuits for switching individual pixel illumination, developing a facile approach that structures pixel-free light-emitting displays with exceptional precision and spatial resolution via external photo-modulation holds significant importance for advancing consumer electronics. Here, optically switchable organic light-emitting pixel-free displays (OSPFDs) are presented and fabricated by judiciously combining an adaptive photosensitive ionic polymer as electron transport materials (ETM) with external photo-modulation as the switching mode while ensuring superior illumination performance and seamless imaging capability. By irradiating the solution-processed OSPFDs with light at specific wavelengths, efficient and reversible tuning of both electron transport and electroluminescence is achieved simultaneously. This remarkable control is achieved by altering the energetic matching within OSPFDs, which also exhibits a high level of universality and adjustable flexibility in the three primary color-based light-emitting displays. Moreover, the ease of creating and erasing desired pixel-free emitting patterns through a non-invasive photopatterning process within a single OSPFD is demonstrated, thereby rendering this approach promising for commercial displaying devices and highly precise pixelated illuminants.
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Affiliation(s)
- Zehong Wang
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
- Center for Smart Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Shilong Dong
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Wenqiang Yuan
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jin Li
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaodong Ma
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Feng Liu
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xuesong Jiang
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
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10
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Su D, Wu W, Sun P, Yuan Y, Chen Z, Zhu Y, Bi K, Zhou H, Zhang T. Thermal-Assisted Multiscale Patterning of Nonplanar Colloidal Nanostructures for Multi-Modal Anti-Counterfeiting. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305469. [PMID: 37867230 PMCID: PMC10767423 DOI: 10.1002/advs.202305469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Indexed: 10/24/2023]
Abstract
Nanotransfer printing of colloidal nanoparticles is a promising technique for the fabrication of functional materials and devices. However, patterning nonplanar nanostructures pose a challenge due to weak adhesion from the extremely small nanostructure-substrate contact area. Here, the study proposes a thermal-assisted nonplanar nanostructure transfer printing (NP-NTP) strategy for multiscale patterning of polystyrene (PS) nanospheres. The printing efficiency is significantly improved from ≈3.1% at low temperatures to ≈97.2% under the glass transition temperature of PS. Additionally, the arrangement of PS nanospheres transitioned from disorder to long-range order. The mechanism of printing efficiency enhancement is the drastic drop of Young's modulus of nanospheres, giving rise to an increased contact area, self-adhesive effect, and inter-particle necking. To demonstrate the versatility of the NP-NTP strategy, it is combined with the intaglio transfer printing technique, and multiple patterns are created at both micro and macro scales at a 4-inch scale with a resolution of ≈2757 pixels per inch (PPI). Furthermore, a multi-modal anti-counterfeiting concept based on structural patterns at hierarchical length scales is proposed, providing a new paradigm of imparting multiscale nanostructure patterning into macroscale functional devices.
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Affiliation(s)
- Dan Su
- Joint International Research Laboratory of Information Display and VisualizationSchool of Electronic Science and EngineeringSoutheast UniversityNanjing210096China
- Key Laboratory of Micro‐Inertial Instrument and Advanced Navigation TechnologyMinistry of EducationSchool of Instrument Science and EngineeringSoutheast UniversityNanjing210096China
- Suzhou Key Laboratory of Metal Nano‐Optoelectronic TechnologySoutheast University Suzhou CampusSuzhou215123China
| | - Wei‐Long Wu
- Joint International Research Laboratory of Information Display and VisualizationSchool of Electronic Science and EngineeringSoutheast UniversityNanjing210096China
| | - Pan‐Qin Sun
- Joint International Research Laboratory of Information Display and VisualizationSchool of Electronic Science and EngineeringSoutheast UniversityNanjing210096China
| | - Yu‐Chen Yuan
- Joint International Research Laboratory of Information Display and VisualizationSchool of Electronic Science and EngineeringSoutheast UniversityNanjing210096China
| | - Ze‐Xian Chen
- Joint International Research Laboratory of Information Display and VisualizationSchool of Electronic Science and EngineeringSoutheast UniversityNanjing210096China
| | - Yun‐Feng Zhu
- Joint International Research Laboratory of Information Display and VisualizationSchool of Electronic Science and EngineeringSoutheast UniversityNanjing210096China
| | - Kai‐Yu Bi
- Suzhou Key Laboratory of Metal Nano‐Optoelectronic TechnologySoutheast University Suzhou CampusSuzhou215123China
- College of Software EngineeringSoutheast UniversityNanjingJiangsu210096China
| | - Huan‐Li Zhou
- Joint International Research Laboratory of Information Display and VisualizationSchool of Electronic Science and EngineeringSoutheast UniversityNanjing210096China
| | - Tong Zhang
- Joint International Research Laboratory of Information Display and VisualizationSchool of Electronic Science and EngineeringSoutheast UniversityNanjing210096China
- Key Laboratory of Micro‐Inertial Instrument and Advanced Navigation TechnologyMinistry of EducationSchool of Instrument Science and EngineeringSoutheast UniversityNanjing210096China
- Suzhou Key Laboratory of Metal Nano‐Optoelectronic TechnologySoutheast University Suzhou CampusSuzhou215123China
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11
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Ahn J, Jang H, Jeong Y, Choi S, Ko J, Hwang SH, Jeong J, Jung YS, Park I. Illuminating Recent Progress in Nanotransfer Printing: Core Principles, Emerging Applications, and Future Perspectives. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2303704. [PMID: 38032705 PMCID: PMC10767444 DOI: 10.1002/advs.202303704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Revised: 08/20/2023] [Indexed: 12/01/2023]
Abstract
As the demand for diverse nanostructures in physical/chemical devices continues to rise, the development of nanotransfer printing (nTP) technology is receiving significant attention due to its exceptional throughput and ease of use. Over the past decade, researchers have attempted to enhance the diversity of materials and substrates used in transfer processes as well as to improve the resolution, reliability, and scalability of nTP. Recent research on nTP has made continuous progress, particularly using the control of the interfacial adhesion force between the donor mold, target material, and receiver substrate, and numerous practical nTP methods with niche applications have been demonstrated. This review article offers a comprehensive analysis of the chronological advancements in nTP technology and categorizes recent strategies targeted for high-yield and versatile printing based on controlling the relative adhesion force depending on interfacial layers. In detail, the advantages and challenges of various nTP approaches are discussed based on their working mechanisms, and several promising solutions to improve morphological/material diversity are presented. Furthermore, this review provides a summary of potential applications of nanostructured devices, along with perspectives on the outlook and remaining challenges, which are expected to facilitate the continued progress of nTP technology and to inspire future innovations.
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Affiliation(s)
- Junseong Ahn
- Department of Mechanical EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
- Department of Nano Manufacturing TechnologyKorea Institute of Machinery and Materials (KIMM)Daejeon34103Republic of Korea
| | - Hanhwi Jang
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
| | - Yongrok Jeong
- Department of Mechanical EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
- Department of Nano Manufacturing TechnologyKorea Institute of Machinery and Materials (KIMM)Daejeon34103Republic of Korea
- Radioisotope Research DivisionKorea Atomic Energy Research Institute (KAERI)Daejeon34057Republic of Korea
| | - Seongsu Choi
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
| | - Jiwoo Ko
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
| | - Soon Hyoung Hwang
- Department of Nano Manufacturing TechnologyKorea Institute of Machinery and Materials (KIMM)Daejeon34103Republic of Korea
| | - Jun‐Ho Jeong
- Department of Nano Manufacturing TechnologyKorea Institute of Machinery and Materials (KIMM)Daejeon34103Republic of Korea
| | - Yeon Sik Jung
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
| | - Inkyu Park
- Department of Mechanical EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
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12
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Zou S, Li Y, Gong Z. Wafer-scale patterning of high-resolution quantum dot films with a thickness over 10 μm for improved color conversion. NANOSCALE 2023; 15:18317-18327. [PMID: 37921020 DOI: 10.1039/d3nr04615j] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Quantum dots (QDs) are promising color conversion materials for efficient full-color micro light-emitting diode (micro-LED) displays owing to their high color purity and wide color gamut. However, achieving high-resolution QD patterns with enough thickness for efficient color conversion is challenging. Here, we demonstrate a facile and compatible approach by combining replicate molding, plasma etching and transfer printing to produce QD patterns with a sufficient thickness over ten micrometers in a wide range of resolutions. Our technique can remarkably simplify the preparation of QD inks and minimize optical damage to QD materials. The pixel resolution and thickness of QD patterns can be controlled by well-defining the microstructures of the molding template and the etching process. The transfer printing process allows QD patterns to be assembled sequentially onto a receiving substrate, which will further improve the original pixel resolution and avoid repetitive optical damage to QDs during the patterning process. Consequently, various QD patterns can be fabricated in this work, including perovskite quantum dot (PQD) patterns with a pixel resolution of up to 669 pixels per inch (ppi) and a maximum thickness of up to 19.74 μm, a wafer-scale high-resolution PQD pattern with sufficient thickness on a flexible substrate, and a dual-color pattern comprising green PQDs and red CdSe QDs. Furthermore, these fabricated QD films with a thickness of over 10 μm show improved color conversion when integrated onto a blue micro-LED, revealing the potential of our technique for full-color micro-LED displays.
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Affiliation(s)
- Shenghan Zou
- Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, China.
| | - Yuzhi Li
- Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, China.
| | - Zheng Gong
- Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, China.
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13
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Ryu JE, Park S, Park Y, Ryu SW, Hwang K, Jang HW. Technological Breakthroughs in Chip Fabrication, Transfer, and Color Conversion for High-Performance Micro-LED Displays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204947. [PMID: 35950613 DOI: 10.1002/adma.202204947] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Revised: 08/05/2022] [Indexed: 06/15/2023]
Abstract
The implementation of high-efficiency and high-resolution displays has been the focus of considerable research interest. Recently, micro light-emitting diodes (micro-LEDs), which are inorganic light-emitting diodes of size <100 µm2 , have emerged as a promising display technology owing to their superior features and advantages over other displays like liquid crystal displays and organic light-emitting diodes. Although many companies have introduced micro-LED displays since 2012, obstacles to mass production still exist. Three major challenges, i.e., low quantum efficiency, time-consuming transfer, and complex color conversion, have been overcome with technological breakthroughs to realize cost-effective micro-LED displays. In the review, methods for improving the degraded quantum efficiency of GaN-based micro-LEDs induced by the size effect are examined, including wet chemical treatment, passivation layer adoption, LED structure design, and growing LEDs in self-passivated structures. Novel transfer technologies, including pick-up transfer and self-assembly methods, for developing large-area micro-LED displays with high yield and reliability are discussed in depth. Quantum dots as color conversion materials for high color purity, and deposition methods such as electrohydrodynamic jet printing or contact printing on micro-LEDs are also addressed. This review presents current status and critical challenges of micro-LED technology and promising technical breakthroughs for commercialization of high-performance displays.
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Affiliation(s)
- Jung-El Ryu
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sohyeon Park
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yongjo Park
- Advance Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
| | - Sang-Wan Ryu
- Department of Physics, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Kyungwook Hwang
- Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advance Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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14
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Park SY, Lee S, Yang J, Kang MS. Patterning Quantum Dots via Photolithography: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300546. [PMID: 36892995 DOI: 10.1002/adma.202300546] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/28/2023] [Indexed: 06/18/2023]
Abstract
Pixelating patterns of red, green, and blue quantum dots (QDs) is a critical challenge for realizing high-end displays with bright and vivid images for virtual, augmented, and mixed reality. Since QDs must be processed from a solution, their patterning process is completely different from the conventional techniques used in the organic light-emitting diode and liquid crystal display industries. Although innovative QD patterning technologies are being developed, photopatterning based on the light-induced chemical conversion of QD films is considered one of the most promising methods for forming micrometer-scale QD patterns that satisfy the precision and fidelity required for commercialization. Moreover, the practical impact will be significant as it directly exploits mature photolithography technologies and facilities that are widely available in the semiconductor industry. This article reviews recent progress in the effort to form QD patterns via photolithography. The review begins with a general description of the photolithography process. Subsequently, different types of photolithographical methods applicable to QD patterning are introduced, followed by recent achievements using these methods in forming high-resolution QD patterns. The paper also discusses prospects for future research directions.
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Affiliation(s)
- Se Young Park
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Seongjae Lee
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
- Institute of Emergent Materials, Sogang University, Seoul, 04107, South Korea
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15
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Park TW, Kang YL, Kim YN, Park WI. High-Resolution Nanotransfer Printing of Porous Crossbar Array Using Patterned Metal Molds by Extreme-Pressure Imprint Lithography. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2335. [PMID: 37630919 PMCID: PMC10458917 DOI: 10.3390/nano13162335] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Revised: 08/10/2023] [Accepted: 08/11/2023] [Indexed: 08/27/2023]
Abstract
High-resolution nanotransfer printing (nTP) technologies have attracted a tremendous amount of attention due to their excellent patternability, high productivity, and cost-effectiveness. However, there is still a need to develop low-cost mold manufacturing methods, because most nTP techniques generally require the use of patterned molds fabricated by high-cost lithography technology. Here, we introduce a novel nTP strategy that uses imprinted metal molds to serve as an alternative to a Si stamp in the transfer printing process. We present a method by which to fabricate rigid surface-patterned metallic molds (Zn, Al, and Ni) based on the process of direct extreme-pressure imprint lithography (EPIL). We also demonstrate the nanoscale pattern formation of functional materials, in this case Au, TiO2, and GST, onto diverse surfaces of SiO2/Si, polished metal, and slippery glass by the versatile nTP method using the imprinted metallic molds with nanopatterns. Furthermore, we show the patterning results of nanoporous crossbar arrays on colorless polyimide (CPI) by a repeated nTP process. We expect that this combined nanopatterning method of EPIL and nTP processes will be extendable to the fabrication of various nanodevices with complex circuits based on micro/nanostructures.
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Affiliation(s)
| | | | | | - Woon Ik Park
- Department of Materials Science and Engineering, Pukyong National University (PKNU), Busan 48513, Republic of Korea; (T.W.P.); (Y.L.K.); (Y.N.K.)
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16
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Luo C, Zheng Z, Ding Y, Ren Z, Shi H, Ji H, Zhou X, Chen Y. High-Resolution, Highly Transparent, and Efficient Quantum Dot Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303329. [PMID: 37335765 DOI: 10.1002/adma.202303329] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2023] [Revised: 06/16/2023] [Indexed: 06/21/2023]
Abstract
Aiming at next-generation displays, high-resolution quantum dot light-emitting diodes (QLEDs) with high efficiency and transparency are highly desired. However, there is limited study involving the improvements of QLED pixel resolution, efficiency, and transparency simultaneously, which undoubtedly restricts the practical applications of QLED for next-generation displays. Here, the strategy of electrostatic force-induced deposition (EF-ID) is proposed by introducing alternating polyethyleneimine (PEI) and fluorosilane patterns to synergistically improve the pixel accuracy and transmittance of QD patterns. More importantly, the leakage current induced by the void spaces between pixels that is usually reported for high-resolution QLEDs is greatly suppressed by substrate-assisted insulating fluorosilane patterns. Finally, high-performance QLEDs with high resolution ranging from 1104 to 3031 pixels per inch (PPI) and a high efficiency of 15.6% are achieved, among the best performances of high resolution QLEDs. Notably, the high resolution QD pixels greatly enhance the transmittance of the QD patterns, thus prompting an impressive transmittance of 90.7% for the transparent QLEDs (2116 PPI), which represents the highest transmittance of transparent QLED devices. Consequently, this work contributes an effective and general approach for high-resolution QLEDs with high efficiency and transparency.
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Affiliation(s)
- Chengzhao Luo
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Zhishuai Zheng
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Yanhui Ding
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Zhenwei Ren
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Hengfei Shi
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Huifeng Ji
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Xin Zhou
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Yu Chen
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
- National University of Singapore Suzhou Research Institute, Dushu Lake Science and Education Innovation District, Suzhou, 215123, P. R. China
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17
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Yi L, Hou B, Zhao H, Liu X. X-ray-to-visible light-field detection through pixelated colour conversion. Nature 2023:10.1038/s41586-023-05978-w. [PMID: 37165192 DOI: 10.1038/s41586-023-05978-w] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2022] [Accepted: 03/20/2023] [Indexed: 05/12/2023]
Abstract
Light-field detection measures both the intensity of light rays and their precise direction in free space. However, current light-field detection techniques either require complex microlens arrays or are limited to the ultraviolet-visible light wavelength ranges1-4. Here we present a robust, scalable method based on lithographically patterned perovskite nanocrystal arrays that can be used to determine radiation vectors from X-rays to visible light (0.002-550 nm). With these multicolour nanocrystal arrays, light rays from specific directions can be converted into pixelated colour outputs with an angular resolution of 0.0018°. We find that three-dimensional light-field detection and spatial positioning of light sources are possible by modifying nanocrystal arrays with specific orientations. We also demonstrate three-dimensional object imaging and visible light and X-ray phase-contrast imaging by combining pixelated nanocrystal arrays with a colour charge-coupled device. The ability to detect light direction beyond optical wavelengths through colour-contrast encoding could enable new applications, for example, in three-dimensional phase-contrast imaging, robotics, virtual reality, tomographic biological imaging and satellite autonomous navigation.
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Affiliation(s)
- Luying Yi
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Bo Hou
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - He Zhao
- Department of Chemistry, National University of Singapore, Singapore, Singapore
- Joint School of National University of Singapore and Tianjin University, Fuzhou, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, Singapore.
- Joint School of National University of Singapore and Tianjin University, Fuzhou, China.
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou, China.
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, Singapore.
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18
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Ahn J, Gu J, Jeong Y, Ha JH, Ko J, Kang B, Hwang SH, Park J, Jeon S, Kim H, Jeong JH, Park I. Nanotransfer-on-Things: From Rigid to Stretchable Nanophotonic Devices. ACS NANO 2023; 17:5935-5942. [PMID: 36916819 DOI: 10.1021/acsnano.3c00025] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The growing demand for nanophotonic devices has driven the advancement of nanotransfer printing (nTP) technology. Currently, the scope of nTP is limited to certain materials and substrates owing to the temperature, pressure, and chemical bonding requirements. In this study, we developed a universal nTP technique utilizing covalent bonding-based adhesives to improve the adhesion between the target material and substrate. Additionally, the technique employed plasma-based selective etching to weaken the adhesion between the mold and target material, thereby enabling the reliable modulation of the relative adhesion forces, regardless of the material or substrate. The technique was evaluated by printing four optical materials on nine substrates, including rigid, flexible, and stretchable substrates. Finally, its applicability was demonstrated by fabricating a ring hologram, a flexible plasmonic color filter, and extraordinary optical transmission-based strain sensors. The high accuracy and reliability of the proposed nTP method were verified by the performance of nanophotonic devices that closely matched numerical simulation results.
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Affiliation(s)
- Junseong Ahn
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Jimin Gu
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Yongrok Jeong
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Ji-Hwan Ha
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Jiwoo Ko
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Byeongmin Kang
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Soon Hyoung Hwang
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Jaeho Park
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Sohee Jeon
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Hwi Kim
- Department of Electronics and Information Engineering, Korea University, Sejong 30019, Republic of Korea
| | - Jun-Ho Jeong
- Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Inkyu Park
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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19
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Nam TW, Grossman JC. Ultrafine Filteration of Metal Catalysts Enables Fabrication of Silicon Nanowires with Diameter Approaching a Unit Cell Size. NANO LETTERS 2023; 23:2347-2353. [PMID: 36893439 DOI: 10.1021/acs.nanolett.3c00209] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Advanced functionalities of silicon nanowires are size-dependent and downscaling of the nanostructure often leads to higher device performances. Single-crystal silicon nanowires with diameters approaching a single unit cell are fabricated using membrane-filtrated catalyst assisted chemical etching. Atomically filtrated gold is used as uniform pattern to direct anisotropic etching of dense silicon nanowire arrays. The size of the nanowires can be controlled by engineering the molecular weight of Poly(methyl methacrylate) used to fabricate the polymer globule membranes. The smallest silicon nanowires with 0.9 nm diameters exhibit direct, and wide band gap of 3.55 eV and establishes a new record. The experimentally obtained silicon nanowires in this size fill the valuable gap below the few-nanometer regime where to date only theoretical predictions have been available. This fabrication approach could provide facile access to atomic-scale silicon, which can bring further advancement to next generation nanodevices.
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Affiliation(s)
- Tae Won Nam
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jeffrey C Grossman
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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20
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Liang SY, Liu YF, Hua JG, Ji ZK, Xia H. Femtosecond laser regulatory focus ablation patterning of a fluorescent film up to 1/10 of the scale of the diffraction limit. NANOSCALE 2023; 15:5494-5498. [PMID: 36853238 DOI: 10.1039/d2nr06946f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Patterned quantum dots (QDs) and perovskites have attracted a great deal of attention in the fabrication of optoelectronic device arrays for transistors, image sensors and displays. However, the resolution of current patterning technologies is insufficient for nanopatterned QDs and perovskites to be integrated in advanced optoelectronic and photonic applications. Herein, we demonstrate a femtosecond laser regulatory focus ablation (FsLRFA) patterning technique of a fluorescent film involving both semiconductor core-shell QDs and perovskite up to 1/10th of the scale of the diffraction limit. Annular lines with a 200 nm-width are obtained after the irradiation of the femtosecond laser. Moreover, the combination of ablated different geometries enables the laser focal spot as brushes for FsLRFA patterning technology to fabricate delicate and programmable patterns on the fluorescent film. This technology with nanoscale resolution and patterning capability paves the road toward highly integrated applications based on QDs and perovskites.
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Affiliation(s)
- Shu-Yu Liang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Yue-Feng Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Jian-Guan Hua
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Zhi-Kun Ji
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Hong Xia
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
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21
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Fu Z, Zhou L, Yin Y, Weng K, Li F, Lu S, Liu D, Liu W, Wu L, Yang Y, Li H, Duan L, Xiao H, Zhang H, Li J. Direct Photo-Patterning of Efficient and Stable Quantum Dot Light-Emitting Diodes via Light-Triggered, Carbocation-Enabled Ligand Stripping. NANO LETTERS 2023; 23:2000-2008. [PMID: 36826387 DOI: 10.1021/acs.nanolett.3c00146] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Next generation displays based on quantum dot light-emitting diodes (QLEDs) require robust patterning methods for quantum dot layers. However, existing patterning methods mostly yield QLEDs with performance far inferior to the state-of-the-art individual devices. Here, we report a light-triggered, carbocation-enabled ligand stripping (CELS) approach to pattern QLEDs with high efficiency and stability. During CELS, photogenerated carbocations from triphenylmethyl chlorides remove native ligands of quantum dots, thereby producing patterns at microscale precision. Chloride anions passivate surface defects and endow patterned quantum dots with preserved photoluminescent quantum yields. It works for both cadmium-based and heavy-metal-free quantum dots. CELS-patterned QLEDs show remarkable external quantum efficiencies (19.1%, 17.5%, 12.0% for red, green, blue, respectively) and a long operation lifetime (T95 at 1000 nits up to 8700 h). Both are among the highest for patterned QLEDs and approach the records for nonpatterned devices, which makes CELS promising for building high-performance QLED displays and related integrated devices.
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Affiliation(s)
- Zhong Fu
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Likuan Zhou
- TCL Research, No. 1001 Zhongshan Park Road, Shenzhen, Guangdong 518067, China
| | - Yue Yin
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Kangkang Weng
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Fu Li
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Shaoyong Lu
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Dan Liu
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Wenyong Liu
- TCL Research, No. 1001 Zhongshan Park Road, Shenzhen, Guangdong 518067, China
| | - Longjia Wu
- TCL Research, No. 1001 Zhongshan Park Road, Shenzhen, Guangdong 518067, China
| | - Yixing Yang
- TCL Research, No. 1001 Zhongshan Park Road, Shenzhen, Guangdong 518067, China
| | - Haifang Li
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Lian Duan
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
- Laboratory of Flexible Electronic Technology, Tsinghua University, Beijing 100084, China
| | - Hai Xiao
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Hao Zhang
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
- Laboratory of Flexible Electronic Technology, Tsinghua University, Beijing 100084, China
| | - Jinghong Li
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
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22
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Nam TW, Choi MJ, Jung YS. Ultrahigh-resolution quantum dot patterning for advanced optoelectronic devices. Chem Commun (Camb) 2023; 59:2697-2710. [PMID: 36751869 DOI: 10.1039/d2cc05874j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023]
Abstract
Quantum dots have attracted significant scientific interest owing to their optoelectronic properties, which are distinct from their bulk counterparts. In order to fully utilize quantum dots for next generation devices with advanced functionalities, it is important to fabricate quantum dot colloids into dry patterns with desired feature sizes and shapes with respect to target applications. In this review, recent progress in ultrahigh-resolution quantum dot patterning technologies will be discussed, with emphasis on the characteristic advantages as well as the limitations of diverse technologies. This will provide guidelines for selecting suitable tools to handle quantum dot colloids throughout the fabrication of quantum dot based solid-state devices. Additionally, epitaxially fabricated single-particle level quantum dot arrays are discussed. These are extreme in terms of pattern resolution, and expand the potential application of quantum dots to quantum information processing.
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Affiliation(s)
- Tae Won Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
| | - Min-Jae Choi
- Department of Chemical and Biochemical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
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23
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Song KM, Kim M, Cho H, Shin H, Kim GY, Yim S, Nam TW, Jung YS. Noninvasive and Direct Patterning of High-Resolution Full-Color Quantum Dot Arrays by Programmed Microwetting. ACS NANO 2022; 16:16598-16607. [PMID: 36130159 DOI: 10.1021/acsnano.2c06032] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although the commercialization of electroluminescent quantum-dot (QD) displays essentially demands multicolor patterning of QDs with sufficient scalability and uniformity, the implementation of QD patterning in a light-emitting diode device is highly challenging, mainly due to the innate vulnerability of QDs and charge-transport layers. Here, we introduce a noninvasive surface-wetting approach for patterning full-color QD arrays on a photoprogrammed hole-transport layer (HTL). To achieve noninvasiveness of QD patterning, surface-specific modification of HTLs was performed without degrading their performance. Moreover, engineering the solvent evaporation kinetics allows area-selective wetting of QD patterns with a uniform thickness profile. Finally, multicolor QD patterning was enabled by preventing cross-contamination between different QD colloids via partial fluoro-encapsulation of earlier-patterned QDs. Throughout the overall QD patterning process, the optoelectronic properties of QDs and hole-transport layers are well preserved, and prototype electroluminescent quantum dot light-emitting diode arrays with high current efficiency and brightness were realized.
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Affiliation(s)
- Kyeong Min Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Moohyun Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyunjin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hongjoo Shin
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Geon Yeong Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Tae Won Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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24
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Yang J, Lee M, Park SY, Park M, Kim J, Sitapure N, Hahm D, Rhee S, Lee D, Jo H, Jo YH, Lim J, Kim J, Shin TJ, Lee DC, Kwak K, Kwon JS, Kim B, Bae WK, Kang MS. Nondestructive Photopatterning of Heavy-Metal-Free Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2205504. [PMID: 35985813 DOI: 10.1002/adma.202205504] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Revised: 08/09/2022] [Indexed: 06/15/2023]
Abstract
Electroluminescence from quantum dots (QDs) is a suitable photon source for futuristic displays offering hyper-realistic images with free-form factors. Accordingly, a nondestructive and scalable process capable of rendering multicolored QD patterns on a scale of several micrometers needs to be established. Here, nondestructive direct photopatterning for heavy-metal-free QDs is reported using branched light-driven ligand crosslinkers (LiXers) containing multiple azide units. The branched LiXers effectively interlock QD films via photo-crosslinking native aliphatic QD surface ligands without compromising the intrinsic optoelectronic properties of QDs. Using branched LiXers with six sterically engineered azide units, RGB QD patterns are achieved on the micrometer scale. The photo-crosslinking process does not affect the photoluminescence and electroluminescence characteristics of QDs and extends the device lifetime. This nondestructive method can be readily adapted to industrial processes and make an immediate impact on display technologies, as it uses widely available photolithography facilities and high-quality heavy-metal-free QDs with aliphatic ligands.
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Affiliation(s)
- Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
| | - Myeongjae Lee
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Se Young Park
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
| | - Myoungjin Park
- Samsung Display Research Center, Samsung Display, Yongin, 17113, Republic of Korea
| | - Jonghoon Kim
- Samsung Display Research Center, Samsung Display, Yongin, 17113, Republic of Korea
| | - Niranjan Sitapure
- Department of Chemical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Donghyo Hahm
- SKKU Advanced Institute of Nanotechnology (SAINT), School of Nano Science & Technology, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Seunghyun Rhee
- SKKU Advanced Institute of Nanotechnology (SAINT), School of Nano Science & Technology, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34113, Republic of Korea
| | - Daeyeon Lee
- Department of Chemistry, Graduate School of Semiconductor Materials and Device Engineering Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Hyunwoo Jo
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
| | - Yong Hyun Jo
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nanotechnology (SAINT), School of Nano Science & Technology, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jungwook Kim
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
| | - Tae Joo Shin
- UNIST Central Research Facilities, Graduate School of Semiconductor Material and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Kyungwon Kwak
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Joseph S Kwon
- Department of Chemical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - BongSoo Kim
- Department of Chemistry, Graduate School of Semiconductor Materials and Device Engineering Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), School of Nano Science & Technology, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
- Institute of Emergent Materials, Sogang University, Seoul, 04107, Republic of Korea
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25
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Hahm D, Lim J, Kim H, Shin JW, Hwang S, Rhee S, Chang JH, Yang J, Lim CH, Jo H, Choi B, Cho NS, Park YS, Lee DC, Hwang E, Chung S, Kang CM, Kang MS, Bae WK. Direct patterning of colloidal quantum dots with adaptable dual-ligand surface. NATURE NANOTECHNOLOGY 2022; 17:952-958. [PMID: 35953539 DOI: 10.1038/s41565-022-01182-5] [Citation(s) in RCA: 35] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Accepted: 06/24/2022] [Indexed: 06/15/2023]
Abstract
Colloidal quantum dots (QDs) stand at the forefront of a variety of photonic applications given their narrow spectral bandwidth and near-unity luminescence efficiency. However, integrating luminescent QD films into photonic devices without compromising their optical or transport characteristics remains challenging. Here we devise a dual-ligand passivation system comprising photocrosslinkable ligands and dispersing ligands to enable QDs to be universally compatible with solution-based patterning techniques. The successful control over the structure of both ligands allows the direct patterning of dual-ligand QDs on various substrates using commercialized photolithography (i-line) or inkjet printing systems at a resolution up to 15,000 pixels per inch without compromising the optical properties of the QDs or the optoelectronic performance of the device. We demonstrate the capabilities of our approach for QD-LED applications. Our approach offers a versatile way of creating various structures of luminescent QDs in a cost-effective and non-destructive manner, and could be implemented in nearly all commercial photonics applications where QDs are used.
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Affiliation(s)
- Donghyo Hahm
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Hyeokjun Kim
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Jin-Wook Shin
- Reality Display Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
| | - Seongkwon Hwang
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Seunghyun Rhee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
- Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon, Republic of Korea
| | - Jun Hyuk Chang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Chang Hyeok Lim
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Hyunwoo Jo
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Beomgyu Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Nam Sung Cho
- Reality Display Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
| | - Young-Shin Park
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Seungjun Chung
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Chan-Mo Kang
- Reality Display Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea.
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea.
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea.
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26
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Nam TW, Park Y, Jung YS, Park HG. Polychromatic Quantum Dot Array to Compose a Community Signal Ensemble for Multiplexed miRNA Detection. ACS NANO 2022; 16:11115-11123. [PMID: 35704843 DOI: 10.1021/acsnano.2c03806] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We herein describe a polychromatic quantum dot array (PQDA) to compose a community signal ensemble enabling accurate and precise quantification of miRNAs in a multiplexed manner. Advanced multicomponent ultrahigh-resolution patterning technique achieved by capsulation-assisted transfer printing following self-assembly-based poly(methyl methacrylate) (PMMA) patterning is utilized to manufacture the PQDA, which is designed to discharge a target miRNAs-specific set of fluorescent quantum dots (QDs) through the activity of duplex-specific nuclease (DSN). On the basis of the community signal ensemble produced by the discharged QD profiles, target miRNAs are very specifically identified down to a femtomolar level (1.27 fM) in a multiplexed manner over a wide dynamic range of up to 6 orders of magnitude. The practical diagnostic capability of this strategy is also demonstrated by reliably identifying breast cancer-specific miRNAs from heterogeneous cancer cell lysates.
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27
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Liang SY, Liu YF, Wang SY, Xia H, Sun HB. High-resolution in situ patterning of perovskite quantum dots via femtosecond laser direct writing. NANOSCALE 2022; 14:1174-1178. [PMID: 35006222 DOI: 10.1039/d1nr07516k] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Colloidal quantum dots (QDs) have exhibited great potential for optoelectronic applications, including displays, lasers, anti-counterfeiting and information storage. However, the high-resolution patterning technique of QDs is still a challenge, while precise patterned QDs are of great value for practical applications. Here, a femtosecond laser direct writing strategy was demonstrated for the in situ fabrication of high-resolution-patterned perovskite quantum dots (PQDs) by the laser-induced Marangoni flow to aggregate and deposit the PQDs based on the opto-thermoelectric mechanism. By regulating the laser power and the exposure time, the minimum line width could reach 1.58 μm. Importantly, through the patterning of red, green and blue PQDs, the strategy exhibited the applicability in full-color PQD materials. Moreover, the deposited PQDs can preserve the original photophysical properties including photoluminescence spectra and excited state lifetime. The approach provides a strategy to fabricate high-resolution patterned PQDs in situ, which is a promising alternative in photonic applications including high-resolution displays and anti-counterfeiting.
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Affiliation(s)
- Shu-Yu Liang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Yue-Feng Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Shen-Yuan Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Hong Xia
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - Hong-Bo Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing 100084, China
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28
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Chen L, Qin Z, Chen S. Ultrahigh Resolution Pixelated Top-Emitting Quantum-Dot Light-Emitting Diodes Enabled by Color-Converting Cavities. SMALL METHODS 2022; 6:e2101090. [PMID: 35041269 DOI: 10.1002/smtd.202101090] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2021] [Revised: 10/09/2021] [Indexed: 06/14/2023]
Abstract
Realizing pixelated quantum-dot light-emitting diodes for high-resolution displays remains a challenging task because of the difficulty of fine patterning the quantum-dots. In this study, instead of patterning the quantum-dots, the color-converting cavities for realizing high-resolution pixelated emission are developed. By defining the thicknesses of the transparent electrodes (phase tuning layers) through a photolithographic process, the resultant cavities can selectively convert the unpatterned quantum-dot white emission as saturated red, green, and blue emission with a brightness of 22170, 51930, and 3064 cd m-2 at 5.5 V, respectively. The developed method enables the realization of ultrahigh density red, green, and blue emission for a display with a resolution of ≈1700 pixel-per-inch and a color gamut of 111% National Television System Committee; together with the advantages of quantum-dot patterning-free, color-filter-free and high brightness, the demonstrated architecture could find potential applications in various displays ranging from cell phone to emerging virtual reality and augmented reality displays.
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Affiliation(s)
- Lianna Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Zhiyuan Qin
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Shuming Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, P. R. China
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29
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Zhang H, Chen L, Chen S. Quantum-dot and organic hybrid tandem light-emitting diodes with color-selecting intermediate electrodes for full-color displays. NANOSCALE 2021; 13:16781-16789. [PMID: 34604890 DOI: 10.1039/d1nr04630f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The immaturity of the color patterning technology and the poor stability of blue (B) quantum-dots are two of the challenges that restrict the development of quantum-dot electroluminescence displays. In this work, we demonstrate a hybrid tandem light-emitting diode (LED), in which a yellow (Y) quantum-dot LED and a B organic LED are vertically connected using an IZO/Ag intermediate electrode. The transparent IZO sets the resonance wavelength of the Y-QLED and thus selectively converts the yellow emission into R or G emission, while the semi-reflective Ag enhances the optical interference of the B LED and hence improves the color saturation of the B emission. Enabled by the multi-functionalities of color-selection and color-enhancement of the intermediate electrode, the tandem LED can emit independently controllable R, G and B colors with a high color gamut of ∼110% NTSC without the need to pattern the light-emitting layers. The demonstrated tandem LED could provide a promising way for the realization of emitting-layer-patterning-free, color-filter-free and wide-color-gamut electroluminescence displays.
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Affiliation(s)
- Heng Zhang
- Harbin Institute of Technology, Harbin, 150001, P. R. China
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China.
| | - Lianna Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China.
| | - Shuming Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China.
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, P. R. China
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30
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Kim GH, Lee J, Lee JY, Han J, Choi Y, Kang CJ, Kim KB, Lee W, Lim J, Cho SY. High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43075-43084. [PMID: 34463100 DOI: 10.1021/acsami.1c11898] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
High-resolution patterning of quantum dot (QD) films is one of the preconditions for the practical use of QD-based emissive display platforms. Recently, inkjet printing and transfer printing have been actively developed; however, high-resolution patterning is still limited owing to nozzle-clogging issues and coffee ring effects during the inkjet printing and kinetic parameters such as pickup and peeling speed during the transfer process. Consequently, employing direct optical lithography would be highly beneficial owing to its well-established process in the semiconductor industry; however, exposing the photoresist (PR) on top of the QD film deteriorates the QD film underneath. This is because a majority of the solvents for PR easily dissolve the pre-existing QD films. In this study, we present a conventional optical lithography process to obtain solvent resistance by reacting the QD film surface with diethylzinc (DEZ) precursors using atomic layer deposition. It was confirmed that, by reacting the QD surface with DEZ and coating PR directly on top of the QD film, a typical photolithography process can be performed to generate a red/green/blue pixel of 3000 ppi or more. QD electroluminescence devices were fabricated with all primary colors of QDs; moreover, compared to reference QD-LED devices, the patterned QD-LED devices exhibited enhanced brightness and efficiency.
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Affiliation(s)
| | | | | | | | | | | | - Ki-Bum Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
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31
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Abstract
Smart materials are a kind of functional materials which can sense and response to environmental conditions or stimuli from optical, electrical, magnetic mechanical, thermal, and chemical signals, etc. Patterning of smart materials is the key to achieving large-scale arrays of functional devices. Over the last decades, printing methods including inkjet printing, template-assisted printing, and 3D printing are extensively investigated and utilized in fabricating intelligent micro/nano devices, as printing strategies allow for constructing multidimensional and multimaterial architectures. Great strides in printable smart materials are opening new possibilities for functional devices to better serve human beings, such as wearable sensors, integrated optoelectronics, artificial neurons, and so on. However, there are still many challenges and drawbacks that need to be overcome in order to achieve the controllable modulation between smart materials and device performance. In this review, we give an overview on printable smart materials, printing strategies, and applications of printed functional devices. In addition, the advantages in actual practices of printing smart materials-based devices are discussed, and the current limitations and future opportunities are proposed. This review aims to summarize the recent progress and provide reference for novel smart materials and printing strategies as well as applications of intelligent devices.
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Affiliation(s)
- Meng Su
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Zhongguancun North First Street 2, 100190 Beijing, P. R. China.,University of Chinese Academy of Sciences, Yuquan Road no.19A, 100049 Beijing, P. R. China
| | - Yanlin Song
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, Beijing National Laboratory for Molecular Sciences (BNLMS), Zhongguancun North First Street 2, 100190 Beijing, P. R. China.,University of Chinese Academy of Sciences, Yuquan Road no.19A, 100049 Beijing, P. R. China
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32
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Bang SY, Suh YH, Fan XB, Shin DW, Lee S, Choi HW, Lee TH, Yang J, Zhan S, Harden-Chaters W, Samarakoon C, Occhipinti LG, Han SD, Jung SM, Kim JM. Technology progress on quantum dot light-emitting diodes for next-generation displays. NANOSCALE HORIZONS 2021; 6:68-77. [PMID: 33400752 DOI: 10.1039/d0nh00556h] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Quantum dot light-emitting diodes (QD-LEDs) are widely recognised as great alternatives to organic light-emitting diodes (OLEDs) due to their enhanced performances. This focus article surveys the current progress on the state-of-the-art QD-LED technology including material synthesis, device optimization and innovative fabrication processes. A discussion on the material synthesis of core nanocrystals, shell layers and surface-binding ligands is presented for high photoluminescence quantum yield (PLQY) quantum dots (QDs) using heavy-metal free materials. The operational principles of several types of QD-LED device architectures are also covered, and the recent evolution of device engineering technologies is investigated. By exploring the fabrication process for pixel-patterning of QD-LEDs on an active-matrix backplane for full-colour display applications, we anticipate further improvement in device performance for the commercialisation of next-generation displays.
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Affiliation(s)
- Sang Yun Bang
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK.
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Yang J, Choi MK, Yang UJ, Kim SY, Kim YS, Kim JH, Kim DH, Hyeon T. Toward Full-Color Electroluminescent Quantum Dot Displays. NANO LETTERS 2021; 21:26-33. [PMID: 33258610 DOI: 10.1021/acs.nanolett.0c03939] [Citation(s) in RCA: 52] [Impact Index Per Article: 17.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Colloidal quantum dots (QDs) exhibit unique characteristics such as facile color tunability, pure color emission with extremely narrow bandwidths, high luminescence efficiency, and high photostability. In addition, quantum dot light-emitting diodes (QLEDs) feature bright electroluminescence, low turn-on voltage, and ultrathin form factor, making them a promising candidate for next-generation displays. To achieve the overarching goal of the full-color display based on the electroluminescence of QDs, however it is essential to enhance the performance of QLEDs further for each color (e.g., red, green, and blue; RGB) and develop novel techniques for patterning RGB QD pixels without cross-contamination. Here, we present state-of-the-art material, process, and device technologies for full-color QLED-based displays. First, we highlight recent advances in the development of efficient red-, green-, and blue-monochromatic QLEDs. In particular, we focus on the progress of heavy-metal-free QLEDs. Then, we describe patterning techniques for individual RGB QDs to fabricate pixelated displays. Finally, we briefly summarize applications of such QLEDs, presenting the possibility of full-color QLED-based displays.
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Affiliation(s)
- Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - U Jeong Yang
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Seo Young Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Young Seong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
| | - Jeong Hyun Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
| | - Taeghwan Hyeon
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
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34
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Lee JB, Walker H, Li Y, Nam TW, Rakovich A, Sapienza R, Jung YS, Nam YS, Maier SA, Cortés E. Template Dissolution Interfacial Patterning of Single Colloids for Nanoelectrochemistry and Nanosensing. ACS NANO 2020; 14:17693-17703. [PMID: 33270433 DOI: 10.1021/acsnano.0c09319] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Deterministic positioning and assembly of colloidal nanoparticles (NPs) onto substrates is a core requirement and a promising alternative to top-down lithography to create functional nanostructures and nanodevices with intriguing optical, electrical, and catalytic features. Capillary-assisted particle assembly (CAPA) has emerged as an attractive technique to this end, as it allows controlled and selective assembly of a wide variety of NPs onto predefined topographical templates using capillary forces. One critical issue with CAPA, however, lies in its final printing step, where high printing yields are possible only with the use of an adhesive polymer film. To address this problem, we have developed a template dissolution interfacial patterning (TDIP) technique to assemble and print single colloidal AuNP arrays onto various dielectric and conductive substrates in the absence of any adhesion layer, with printing yields higher than 98%. The TDIP approach grants direct access to the interface between the AuNP and the target surface, enabling the use of colloidal AuNPs as building blocks for practical applications. The versatile applicability of TDIP is demonstrated by the creation of direct electrical junctions for electro- and photoelectrochemistry and nanoparticle-on-mirror geometries for single-particle molecular sensing.
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Affiliation(s)
- Joong Bum Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Harriet Walker
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
| | - Yi Li
- School of Microelectronics, MOE Engineering Research Center of Integrated Circuits for Next Generation Communications, Southern University of Science and Technology, Shenzhen, 518055 Guangdong China
| | - Tae Won Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | | | - Riccardo Sapienza
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Yoon Sung Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
- KAIST Institute for Nanocentury, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Stefan A Maier
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539 München, Germany
| | - Emiliano Cortés
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539 München, Germany
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