1
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Li D, Li Z, Sun Y, Zhou J, Xu X, Wang H, Chen Y, Song X, Liu P, Luo Z, Han ST, Zhou X, Zhai T. In-Sublattice Carrier Transition Enabled Polarimetric Photodetectors with Reconfigurable Polarity Transition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2407010. [PMID: 39011780 DOI: 10.1002/adma.202407010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 07/03/2024] [Indexed: 07/17/2024]
Abstract
Miniaturized polarimetric photodetectors based on anisotropic two-dimensional materials attract potential applications in ultra-compact polarimeters. However, these photodetectors are hindered by the small polarization ratio values and complicated artificial structures. Here, a novel polarization photodetector based on in-sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, with a giant and reconfigurable PR value, is demonstrated. The unique periodic sublattice structure of CdSb2Se3Br2 features an in-sublattice carrier transition preferred along Sb2Se3 chains. Leveraging on the in-sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, gate voltage has an anisotropic modulation effect on the band alignment of heterostructure along sublattice. Consequently, the heterostructure exhibits a polarization-tunable photo-induced threshold voltage shift, which provides reconfigurable PR values from positive (unipolar regime) to negative (bipolar regime), covering all possible numbers (1→+∞/-∞→-1). Using this anisotropic photovoltaic effect, gate-tunable polarimetric imaging is successfully implemented. This work provides a new platform for developing next-generation highly polarimetric optoelectronics.
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Affiliation(s)
- Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yan Sun
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yunxin Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xingyu Song
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Pengbin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong, 999077, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong, 999077, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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2
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Yu Q, Feng S, Yu J, Cheng S, Lai Y, Chen Y, He K. Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi 2Te 3 Nanowires. ACS APPLIED MATERIALS & INTERFACES 2024; 16:40297-40308. [PMID: 39016434 DOI: 10.1021/acsami.4c11221] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2024]
Abstract
Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator Bi2Te3 nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of Bi2Te3 nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the Bi2Te3 nanowire on the Si substrate is an order of magnitude larger than that on SiO2, which may be due to the spin injection from the Si substrate to the Bi2Te3 nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the Bi2Te3 nanowire. This work suggests that topological insulator Bi2Te3 nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection.
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Affiliation(s)
- Qin Yu
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, Fujian, China
| | - Shizun Feng
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, Fujian, China
| | - Jinling Yu
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, Fujian, China
- Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, China
| | - Shuying Cheng
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, Fujian, China
| | - Yunfeng Lai
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, Fujian, China
| | - Yonghai Chen
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ke He
- Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
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3
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Huang J, You C, Wu B, Wang Y, Zhang Z, Zhang X, Liu C, Huang N, Zheng Z, Wu T, Kiravittaya S, Mei Y, Huang G. Enhanced photothermoelectric conversion in self-rolled tellurium photodetector with geometry-induced energy localization. LIGHT, SCIENCE & APPLICATIONS 2024; 13:153. [PMID: 38965220 PMCID: PMC11224300 DOI: 10.1038/s41377-024-01496-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 05/23/2024] [Accepted: 05/26/2024] [Indexed: 07/06/2024]
Abstract
Photodetection has attracted significant attention for information transmission. While the implementation relies primarily on the photonic detectors, they are predominantly constrained by the intrinsic bandgap of active materials. On the other hand, photothermoelectric (PTE) detectors have garnered substantial research interest for their promising capabilities in broadband detection, owing to the self-driven photovoltages induced by the temperature differences. To get higher performances, it is crucial to localize light and heat energies for efficient conversion. However, there is limited research on the energy conversion in PTE detectors at micro/nano scale. In this study, we have achieved a two-order-of-magnitude enhancement in photovoltage responsivity in the self-rolled tubular tellurium (Te) photodetector with PTE effect. Under illumination, the tubular device demonstrates a maximum photovoltage responsivity of 252.13 V W-1 and a large detectivity of 1.48 × 1011 Jones. We disclose the mechanism of the PTE conversion in the tubular structure with the assistance of theoretical simulation. In addition, the device exhibits excellent performances in wide-angle and polarization-dependent detection. This work presents an approach to remarkably improve the performance of photodetector by concentrating light and corresponding heat generated, and the proposed self-rolled devices thus hold remarkable promises for next-generation on-chip photodetection.
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Affiliation(s)
- Jiayuan Huang
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China
| | - Chunyu You
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China
| | - Binmin Wu
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China
| | - Yunqi Wang
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China
| | - Ziyu Zhang
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China
| | - Xinyu Zhang
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China
| | - Chang Liu
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China
| | - Ningge Huang
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China
| | - Zhi Zheng
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China
| | - Tingqi Wu
- ShanghaiTech Quantum Device Lab, ShanghaiTech University, Shanghai, 200120, China
| | - Suwit Kiravittaya
- Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, Thailand
| | - Yongfeng Mei
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200438, China
| | - Gaoshan Huang
- Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, China.
- Yiwu Research Institute of Fudan University, Yiwu, 322000, Zhejiang, China.
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, China.
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4
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Chen Q, Ding Z, Zhang L, Wang D, Geng C, Feng Y, Zhang J, Ren M, Li S, Qaid SMH, Jiang Y, Yuan M. Uniaxial-Oriented Chiral Perovskite for Flexible Full-Stokes Polarimeter. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400493. [PMID: 38733358 DOI: 10.1002/adma.202400493] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2024] [Revised: 03/24/2024] [Indexed: 05/13/2024]
Abstract
Full-Stokes polarization detection, with high integration and portability, offers an efficient path toward next-gen multi-information optoelectronic systems. Nevertheless, current techniques relying on optical filters create rigid and bulky configurations, limiting practicality. Here, a flexible, filter-less full-Stokes polarimeter featuring a uniaxial-oriented chiral perovskite film is first reported. It is found that, the strategic manipulation of the surfactant-mediated Marangoni effect during blade coating, is crucial for guiding an equilibrious mass transport to achieve oriented crystallization. Through this approach, the obtained uniaxial-oriented chiral perovskite films inherently possess anisotropy and chirality, and thereby with desired sensitivity to both linearly polarized light and circularly polarized light vectors. The uniaxial-oriented crystalline structure also improves photodetection, achieving a specific detectivity of 5.23 × 1013 Jones, surpassing non-oriented devices by 10×. The as-fabricated flexible polarimeters enable accurate capture of full-Stokes polarization without optical filters, exhibiting slight detection errors for the Stokes parameters: ΔS1 = 9.2%, ΔS2 = 8.6%, and ΔS3 = 6.5%, approaching the detection accuracy of optics-filter polarimeters. This proof of concept also demonstrates applications in matrix polarization imaging.
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Affiliation(s)
- Quanlin Chen
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Frontiers Science Center for New Organic Matter, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Zijin Ding
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Frontiers Science Center for New Organic Matter, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Li Zhang
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Frontiers Science Center for New Organic Matter, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Di Wang
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Frontiers Science Center for New Organic Matter, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Cong Geng
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Frontiers Science Center for New Organic Matter, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Yanxing Feng
- School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, 453007, China
| | - Jia Zhang
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Frontiers Science Center for New Organic Matter, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Miao Ren
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Saisai Li
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Frontiers Science Center for New Organic Matter, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Saif M H Qaid
- Department of Physics & Astronomy, College of Sciences, King Saud University, Riyadh, 11451, Saudi Arabia
| | - Yuanzhi Jiang
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Frontiers Science Center for New Organic Matter, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Mingjian Yuan
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Frontiers Science Center for New Organic Matter, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
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5
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Dai M, Wang C, Sun F, Wang QJ. On-chip photodetection of angular momentums of vortex structured light. Nat Commun 2024; 15:5396. [PMID: 38926397 PMCID: PMC11208514 DOI: 10.1038/s41467-024-49855-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Accepted: 06/21/2024] [Indexed: 06/28/2024] Open
Abstract
Structured vortex light with orbital angular momentum (OAM) shows great promise for high-bandwidth optical communications, quantum information and computing, optical tweezers, microscopy, astronomy, among others. Generating, controlling, and detecting of vortex light by all-electrical means is at the heart of next generation nanophotonic platforms. However, on-chip electrical photodetection of structured vortex light remains challenging. Here, we propose an on-chip photodetector based on 2D broadband thermoelectric material (PdSe2) with a well-designed spin-Hall couplers to directly characterize angular momentum modes of vortex structured light. Photothermoelectric responses in the PdSe2 nanoflake, excited by the focusing surface plasmons, show a magnitude proportional to the total angular momentum modes of the infrared vortex beams, thereby achieving direct detection of spin and orbital angular momentum, as well as the chirality and ellipticity of scalar vortex lights. Our works provide a promising strategy for developing on-chip angular momentum optoelectronic devices, which play a key role in the next-generation high-capacity optical communications, quantum information and computing, imaging, and other photonic systems.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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6
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Fan Y, Huang W, Zhu F, Liu X, Jin C, Guo C, An Y, Kivshar Y, Qiu CW, Li W. Dispersion-assisted high-dimensional photodetector. Nature 2024; 630:77-83. [PMID: 38750367 DOI: 10.1038/s41586-024-07398-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2023] [Accepted: 04/09/2024] [Indexed: 06/07/2024]
Abstract
Intensity, polarization and wavelength are intrinsic characteristics of light. Characterizing light with arbitrarily mixed information on polarization and spectrum is in high demand1-4. Despite the extensive efforts in the design of polarimeters5-18 and spectrometers19-27, concurrently yielding high-dimensional signatures of intensity, polarization and spectrum of the light fields is challenging and typically requires complicated integration of polarization- and/or wavelength-sensitive elements in the space or time domains. Here we demonstrate that simple thin-film interfaces with spatial and frequency dispersion can project and tailor polarization and spectrum responses in the wavevector domain. By this means, high-dimensional light information can be encoded into single-shot imaging and deciphered with the assistance of a deep residual network. To the best of our knowledge, our work not only enables full characterization of light with arbitrarily mixed full-Stokes polarization states across a broadband spectrum with a single device and a single measurement but also presents comparable, if not better, performance than state-of-the-art single-purpose miniaturized polarimeters or spectrometers. Our approach can be readily used as an alignment-free retrofit for the existing imaging platforms, opening up new paths to ultra-compact and high-dimensional photodetection and imaging.
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Affiliation(s)
- Yandong Fan
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Weian Huang
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Fei Zhu
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Xingsi Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Chunqi Jin
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
- University of Chinese Academy of Sciences, Beijing, China.
| | - Chenzi Guo
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
| | - Yang An
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
| | - Yuri Kivshar
- Nonlinear Physics Centre, Research School of Physics, Australian National University, Canberra, Australian Capital Territory, Australia
- Qingdao Innovation and Development Center, Harbin Engineering University, Qingdao, China
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
| | - Wei Li
- GPL Photonics Laboratory, State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
- University of Chinese Academy of Sciences, Beijing, China.
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7
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Dai X, Wang Y, Sun X, Li K, Pan J, Wang J, Zhuang T, Chong D, Yan J, Wang H. All-Automated Fabrication of Freestanding and Scalable Photo-Thermoelectric Devices with High Performance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312570. [PMID: 38359909 DOI: 10.1002/adma.202312570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 02/03/2024] [Indexed: 02/17/2024]
Abstract
Flexible photo-thermoelectric (PTE) devices have great application prospects in the fields of solar energy conversion, ultrabroadband light detection, etc. A suitable manufacturing process to avoid the substrate effects as well as to create a narrow transition area between p-n modules for high-performance freestanding flexible PTE devices is highly desired. Herein, an automated laser fabrication (ALF) method is reported to construct the PTE devices with rylene-diimide-doped n-type single-walled carbon nanotube (SWCNT) films. The wet-compressing approach is developed to improve the thermoelectric power factors and figure of merit (ZT) of the SWCNT hybrid films. Then, the films are cut and patterned automatically to make PTE devices with various structures by the proposed ALF method. The freestanding PTE device with a narrow transition area of ≈2-3 µm between the p and n modules exhibits a high-power density of 0.32 µW cm-2 under the light of 200 mW cm-2, which is among the highest level for freestanding-film-based PTE devices. The results pave the way for the automatic production process of PTE devices for green power generation and ultrabroadband light detection.
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Affiliation(s)
- Xu Dai
- State Key Laboratory of Multiphase Flow in Power Engineering and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Yizhuo Wang
- State Key Laboratory of Multiphase Flow in Power Engineering and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Xu Sun
- State Key Laboratory of Multiphase Flow in Power Engineering and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Kuncai Li
- State Key Laboratory of Multiphase Flow in Power Engineering and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Jiahao Pan
- State Key Laboratory of Multiphase Flow in Power Engineering and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Jing Wang
- State Key Laboratory of Multiphase Flow in Power Engineering and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Tiantian Zhuang
- State Key Laboratory of Multiphase Flow in Power Engineering and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Daotong Chong
- State Key Laboratory of Multiphase Flow in Power Engineering and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Junjie Yan
- State Key Laboratory of Multiphase Flow in Power Engineering and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Hong Wang
- State Key Laboratory of Multiphase Flow in Power Engineering and Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
- School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an, 710054, China
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8
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Bai Q, Huang X, Du S, Guo Y, Li C, Li W, Li J, Gu C. Multiple-polarization-sensitive photodetector Based on a plasmonic metasurface. NANOSCALE 2024. [PMID: 38625084 DOI: 10.1039/d4nr00808a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
On-chip polarization-sensitive photodetectors are highly desired for ultra-compact optoelectronic systems. It has been demonstrated that polarization-sensitive photodetection can be realized using intrinsic chiral and anisotropy materials. However, these photodetectors can only realize the detection of either circularly polarized light (CPL) or linear polarized light (LPL) and are not applicable to multiple-polarization-sensitive photodetection. Herein, we experimentally demonstrate a metasurface-integrated semiconductor to realize multiple-polarization-sensitive photodetection at visible wavelengths. This device is composed of a MoSe2 monolayer on an H-shaped plasmonic nanostructure. The geometric chirality and anisotropy of the H-shaped nanostructure result in CPL and LPL resolved optical responses. By integrating a plasmonic metasurface with monolayer MoSe2, we converted polarization-sensitive optical absorption to the polarization-sensitive photocurrent of the device through the photoconductive effect. Polarization-sensitive photocurrent responses to both CPL and LPL are systematically investigated, which demonstrate a high photocurrent circular dichroism (CD) of 0.35 at a wavelength of 810 nm and photocurrent linear polarization (LP) of 0.4 at a wavelength of 633 nm. Our results provide a potential pathway to realize multiple-polarization-sensitive applications in medicine analysis, biology, and remote sensing.
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Affiliation(s)
- Qinghu Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xin Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Shuo Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Chensheng Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Wei Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Junjie Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
| | - Changzhi Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
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9
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Liu L, Liang H, Huang Y, Cai C, Liu W, Yu X, Zhang J. Sub-micron pixel polarization-sensitive photodetector based on silicon nanowire. OPTICS EXPRESS 2024; 32:13128-13139. [PMID: 38859291 DOI: 10.1364/oe.520500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Accepted: 03/15/2024] [Indexed: 06/12/2024]
Abstract
Silicon nanowire is a potential candidate to be used as polarization-sensitive material, but the relative mechanism of polarization response must be carried out. Herein, a sub-micron metal-single silicon nanowire-metal photodetector exhibits polarization-sensitive characteristics with an anisotropic photocurrent ratio of 1.59 at 780 nm, an excellent responsivity of 24.58 mA/W, and a high detectivity of 8.88 × 109 Jones at 980 nm. The underlying principle of optical anisotropy in silicon nanowire is attributed to resonance enhancement verified by polarizing light microscopy and simulation. Furthermore, Stokes parameter measurements and imaging are all demonstrated by detecting the characteristics of linearly polarized light and imaging the polarizer array, respectively. Given the maturity of silicon processing, the sub-micron linearly polarized light detection proposed in this study lays the groundwork for achieving highly integrated, simplified processes, and cost-effective on-chip polarization-sensitive optical chips in the future.
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10
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Wang F, Zhu S, Chen W, Han J, Duan R, Wang C, Dai M, Sun F, Jin Y, Wang QJ. Multidimensional detection enabled by twisted black arsenic-phosphorus homojunctions. NATURE NANOTECHNOLOGY 2024; 19:455-462. [PMID: 38225358 DOI: 10.1038/s41565-023-01593-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 12/12/2023] [Indexed: 01/17/2024]
Abstract
A light field carrying multidimensional optical information, including but not limited to polarization, intensity and wavelength, is essential for numerous applications such as environmental monitoring, thermal imaging, medical diagnosis and free-space communications. Simultaneous acquisition of this multidimensional information could provide comprehensive insights for understanding complex environments but remains a challenge. Here we demonstrate a multidimensional optical information detection device based on zero-bias double twisted black arsenic-phosphorus homojunctions, where the photoresponse is dominated by the photothermoelectric effect. By using a bipolar and phase-offset polarization photoresponse, the device operated in the mid-infrared range can simultaneously detect both the polarization angle and incident intensity information through direct measurement of the photocurrents in the double twisted black arsenic-phosphorus homojunctions. The device's responsivity makes it possible to retrieve wavelength information, typically perceived as difficult to obtain. Moreover, the device exhibits an electrically tunable polarization photoresponse, enabling precise distinction of polarization angles under low-intensity light exposure. These demonstrations offer a promising approach for simultaneous detection of multidimensional optical information, indicating potential for diverse photonic applications.
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Affiliation(s)
- Fakun Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Song Zhu
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Wenduo Chen
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Jiayue Han
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Chongwu Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Mingjin Dai
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Fangyuan Sun
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Yuhao Jin
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Qi Jie Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
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11
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Si W, Zhou W, Liu X, Wang K, Liao Y, Yan F, Ji X. Recent Advances in Broadband Photodetectors from Infrared to Terahertz. MICROMACHINES 2024; 15:427. [PMID: 38675239 PMCID: PMC11051910 DOI: 10.3390/mi15040427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Revised: 03/15/2024] [Accepted: 03/19/2024] [Indexed: 04/28/2024]
Abstract
The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.
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Affiliation(s)
- Wei Si
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Wenbin Zhou
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiangze Liu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Ke Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Yiming Liao
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Feng Yan
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoli Ji
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
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12
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Ki YG, Jeon BJ, Song IH, Kim SJ, Jeon S, Kim SJ. Realizing Minimally Perturbed, Nonlocal Chiral Metasurfaces for Direct Stokes Parameter Detection. ACS NANO 2024; 18:7064-7073. [PMID: 38373394 PMCID: PMC10919284 DOI: 10.1021/acsnano.3c10749] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 02/08/2024] [Accepted: 02/09/2024] [Indexed: 02/21/2024]
Abstract
Recent development in nonlocal resonance based chiral metasurfaces draws great attention due to their abilities to strongly interact with circularly polarized light at a relatively narrow spectral bandwidth. However, there still remain challenges in realizing effective nonlocal chiral metasurfaces in optical frequency due to demanding fabrications such as 3D-multilayered or nanoscaled chiral geometry, which, in particular, limit their applications to polarimetric detection with high-Q spectra. Here, we study the underlying working principles and reveal the important role of the interaction between high-Q nonlocal resonance and low-Q localized Mie resonance in realizing effective nonlocal chiral metasurfaces. Based on the working principles, we demonstrate one of the simplest types of nonlocal chiral metasurfaces which directly detects a set of Stokes parameters without the numerical combination of transmitted values presented from typical Stokes metasurfaces. This is achieved by minimally altering the geometry and filling ratio of every constituent nanostructure in a unit cell, facilitating consistent-sized nanolithography for all samples experimentally at a targeted wavelength with relatively high-Q spectra. This work provides an alternative design rule to realizing effective polarimetric metasurfaces and the potential applications of nonlocal Stokes parameters detection.
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Affiliation(s)
- Yu Geun Ki
- School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Byeong Je Jeon
- School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Il Hoon Song
- School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Seong Jun Kim
- School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Sangtae Jeon
- School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Soo Jin Kim
- School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
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13
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Jiang H, Fu J, Wei J, Li S, Nie C, Sun F, Wu QYS, Liu M, Dong Z, Wei X, Gao W, Qiu CW. Synergistic-potential engineering enables high-efficiency graphene photodetectors for near- to mid-infrared light. Nat Commun 2024; 15:1225. [PMID: 38336952 PMCID: PMC10858052 DOI: 10.1038/s41467-024-45498-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Accepted: 01/26/2024] [Indexed: 02/12/2024] Open
Abstract
High quantum efficiency and wide-band detection capability are the major thrusts of infrared sensing technology. However, bulk materials with high efficiency have consistently encountered challenges in integration and operational complexity. Meanwhile, two-dimensional (2D) semimetal materials with unique zero-bandgap structures are constrained by the bottleneck of intrinsic quantum efficiency. Here, we report a near-mid infrared ultra-miniaturized graphene photodetector with configurable 2D potential well. The 2D potential well constructed by dielectric structures can spatially (laterally and vertically) produce a strong trapping force on the photogenerated carriers in graphene and inhibit their recombination, thereby improving the external quantum efficiency (EQE) and photogain of the device with wavelength-immunity, which enable a high responsivity of 0.2 A/W-38 A/W across a broad infrared detection band from 1.55 to 11 µm. Thereafter, a room-temperature detectivity approaching 1 × 109 cm Hz1/2 W-1 is obtained under blackbody radiation. Furthermore, a synergistic effect of electric and light field in the 2D potential well enables high-efficiency polarization-sensitive detection at tunable wavelengths. Our strategy opens up alternative possibilities for easy fabrication, high-performance and multifunctional infrared photodetectors.
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Affiliation(s)
- Hao Jiang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Jintao Fu
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China
| | - Jingxuan Wei
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
| | - Shaojuan Li
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
| | - Changbin Nie
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China
| | - Feiying Sun
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China
| | - Qing Yang Steve Wu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore
| | - Mingxiu Liu
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
| | - Zhaogang Dong
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore.
| | - Xingzhan Wei
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China.
| | - Weibo Gao
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
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14
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Xin W, Zhong W, Shi Y, Shi Y, Jing J, Xu T, Guo J, Liu W, Li Y, Liang Z, Xin X, Cheng J, Hu W, Xu H, Liu Y. Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306772. [PMID: 37661841 DOI: 10.1002/adma.202306772] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/22/2023] [Indexed: 09/05/2023]
Abstract
The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.
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Affiliation(s)
- Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yujie Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yimeng Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jiawei Jing
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Zhongzhu Liang
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jinluo Cheng
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
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15
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Wang H, Li Y, Gao P, Wang J, Meng X, Hu Y, Yang J, Huang Z, Gao W, Zheng Z, Wei Z, Li J, Huo N. Polarization- and Gate-Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309371. [PMID: 37769436 DOI: 10.1002/adma.202309371] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 09/27/2023] [Indexed: 09/30/2023]
Abstract
Polarimetric photodetector can acquire higher resolution and more surface information of imaging targets in complex environments due to the identification of light polarization. To date, the existing technologies yet sustain the poor polarization sensitivity (<10), far from market application requirement. Here, the photovoltaic detectors with polarization- and gate-tunable optoelectronic reverse phenomenon are developed based on semimetal 1T'-MoTe2 and ambipolar WSe2 . The device exhibits gate-tunable reverse in rectifying and photovoltaic characters due to the directional inversion of energy band, yielding a wide range of current rectification ratio from 10-2 to 103 and a clear object imaging with 100 × 100 pixels. Acting as a polarimetric photodetector, the polarization ratio (PR) value can reach a steady state value of ≈30, which is compelling among the state-of-the-art 2D-based polarized detectors. The sign reversal of polarization-sensitive photocurrent by varying the light polarization angles is also observed, that can enable the PR value with a potential to cover possible numbers (1→+∞/-∞→-1). This work develops a photovoltaic detector with polarization- and gate-tunable optoelectronic reverse phenomenon, making a significant progress in polarimetric imaging and multifunction integration applications.
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Affiliation(s)
- Hanyu Wang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
| | - Yan Li
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Peng Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
| | - Jina Wang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
| | - Xuefeng Meng
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
| | - Yin Hu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Nengjie Huo
- School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
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16
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Dai X, Yu Y, Ye T, Deng J, Bu Y, Shi M, Wang R, Zhou J, Sun L, Chen X, Shen X. Dynamically Reconfigurable on-Chip Polarimeters Based on Nanoantenna Enabled Polarization Dependent Optoelectronic Computing. NANO LETTERS 2024; 24:983-992. [PMID: 38206182 DOI: 10.1021/acs.nanolett.3c04454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
On-chip polarization detectors have attracted extensive research interest due to their filterless and ultracompact architecture. However, their polarization-dependent photoresponses cannot be dynamically adjusted, hindering the development toward intelligence. Here, we propose dynamically reconfigurable polarimetry based on in-sensor differentiation of two self-powered photoresponses with orthogonal polarization dependences and tunable responsivities. Such a device can be electrostatically configured in an ultrahigh polarization extinction ratio (PER) mode, where the PER tends to infinity, a Stokes parameter direct sensing mode, where the photoresponse is proportional to S1 or S2 with high accuracy (RMSES1 = 1.5%, RMSES2 = 2.0%), or a background suppressing mode, where the target-background polarization contrast is singularly enhanced. Moreover, the device achieves a polarization angle sensitivity of 0.51 mA·W-1·degree-1 and a specific polarization angle detectivity of 2.8 × 105 cm·Hz1/2·W·degree-1. This scheme is demonstrated throughout the near-to-long-wavelength infrared range, and it will bring a leap for next-generation on-chip polarimeters.
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Affiliation(s)
- Xu Dai
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Yu Yu
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Tao Ye
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Jie Deng
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Yonghao Bu
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Mengdie Shi
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Ruowen Wang
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Jing Zhou
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Liaoxin Sun
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xuechu Shen
- State Key Laboratory of Infrared Science and Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
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17
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Yu Y, Xiong T, Liu YY, Yang J, Xia JB, Wei Z. Polarization Reversal of Group IV-VI Semiconductors with Pucker-Like Structure: Mechanism Dissecting and Function Demonstration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307769. [PMID: 37696251 DOI: 10.1002/adma.202307769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Revised: 08/31/2023] [Indexed: 09/13/2023]
Abstract
Polarization imaging presents advantages in capturing spatial, spectral, and polarization information across various spectral bands. It can improve the perceptual ability of image sensors and has garnered more applications. Despite its potential, challenges persist in identifying band information and implementing image enhancement using polarization imaging. These challenges often necessitate integrating spectrometers or other components, resulting in increased complexities within image processing systems and hindering device miniaturization trends. Here, the characteristics of anisotropic absorption reversal are systematically elucidated in pucker-like group IV-VI semiconductors MX (M = Ge, Sn; X = S, Se) through theoretical predictions and experimental validations. Additionally, the fundamental mechanisms behind anisotropy reversal in different bands are also explored. The photodetector is constructed by utilizing MX as a light-absorbing layer, harnessing polarization-sensitive photoresponse for virtual imaging. The results indicate that the utilization of polarization reversal photodetectors holds advantages in achieving further multifunctional integration within the device structure while simplifying its configuration, including band information identification and image enhancement. This study provides a comprehensive analysis of polarization reversal mechanisms and presents a promising and reliable approach for achieving dual-band image band identification and image enhancement without additional auxiliary components.
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Affiliation(s)
- Yali Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Xiong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jian-Bai Xia
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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18
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Lai Y, Marquez M, Liang J. Tutorial on compressed ultrafast photography. JOURNAL OF BIOMEDICAL OPTICS 2024; 29:S11524. [PMID: 38292055 PMCID: PMC10826888 DOI: 10.1117/1.jbo.29.s1.s11524] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Revised: 12/23/2023] [Accepted: 12/28/2023] [Indexed: 02/01/2024]
Abstract
Significance Compressed ultrafast photography (CUP) is currently the world's fastest single-shot imaging technique. Through the integration of compressed sensing and streak imaging, CUP can capture a transient event in a single camera exposure with imaging speeds from thousands to trillions of frames per second, at micrometer-level spatial resolutions, and in broad sensing spectral ranges. Aim This tutorial aims to provide a comprehensive review of CUP in its fundamental methods, system implementations, biomedical applications, and prospect. Approach A step-by-step guideline to CUP's forward model and representative image reconstruction algorithms is presented with sample codes and illustrations in Matlab and Python. Then, CUP's hardware implementation is described with a focus on the representative techniques, advantages, and limitations of the three key components-the spatial encoder, the temporal shearing unit, and the two-dimensional sensor. Furthermore, four representative biomedical applications enabled by CUP are discussed, followed by the prospect of CUP's technical advancement. Conclusions CUP has emerged as a state-of-the-art ultrafast imaging technology. Its advanced imaging ability and versatility contribute to unprecedented observations and new applications in biomedicine. CUP holds great promise in improving technical specifications and facilitating the investigation of biomedical processes.
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Affiliation(s)
- Yingming Lai
- Université du Québec, Institut National de la Recherche Scientifique, Centre Énergie Matériaux Télécommunications, Laboratory of Applied Computational Imaging, Varennes, Québec, Canada
| | - Miguel Marquez
- Université du Québec, Institut National de la Recherche Scientifique, Centre Énergie Matériaux Télécommunications, Laboratory of Applied Computational Imaging, Varennes, Québec, Canada
| | - Jinyang Liang
- Université du Québec, Institut National de la Recherche Scientifique, Centre Énergie Matériaux Télécommunications, Laboratory of Applied Computational Imaging, Varennes, Québec, Canada
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19
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Han J, Wang F, Zhang Y, Deng W, Dai M, Hu F, Chen W, Cui J, Zhang C, Zhu S, Wang C, Ye M, Han S, Luo Y, Zhai T, Wang J, Wang QJ. Mid-Infrared Bipolar and Unipolar Linear Polarization Detections in Nb 2 GeTe 4 /MoS 2 Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2305594. [PMID: 37740257 DOI: 10.1002/adma.202305594] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2023] [Revised: 09/16/2023] [Indexed: 09/24/2023]
Abstract
Detecting and distinguishing light polarization states, one of the most basic elements of optical fields, have significant importance in both scientific studies and industry applications. Artificially fabricated structures, e.g., metasurfaces with anisotropic absorptions, have shown the capabilities of detecting polarization light and controlling. However, their operations mainly rely on resonant absorptions based on structural designs that are usually narrow bands. Here, a mid-infrared (MIR) broadband polarization photodetector with high PRs and wavelength-dependent polarities using a 2D anisotropic/isotropic Nb2 GeTe4 /MoS2 van der Waals (vdWs) heterostructure is demonstrated. It is shown that the photodetector exhibits high PRs of 48 and 34 at 4.6 and 11.0 µm wavelengths, respectively, and even a negative PR of -3.38 for 3.7 µm under the zero bias condition at room temperature. Such interesting results can be attributed to the superimposed effects of a photovoltaic (PV) mechanism in the Nb2 GeTe4 /MoS2 hetero-junction region and a bolometric mechanism in the MoS2 layer. Furthermore, the photodetector demonstrates its effectiveness in bipolar and unipolar polarization encoding communications and polarization imaging enabled by its unique and high PRs.
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Affiliation(s)
- Jiayue Han
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Fakun Wang
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yue Zhang
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wenjie Deng
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Mingjin Dai
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangchen Hu
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Wenduo Chen
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jieyuan Cui
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chaoyi Zhang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Song Zhu
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Han
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yu Luo
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jun Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Qi Jie Wang
- Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- School of Physical and Mathematical Science, and, Photonics Institute, Nanyang Technological University, Singapore, 639798, Singapore
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20
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Feng J, Liang Z, Shi X, Dong Y, Yang F, Zhang X, Dai R, Jia Y, Liu H, Li S. Detector of UV light chirality based on a diamond metasurface. OPTICS EXPRESS 2023; 31:34252-34263. [PMID: 37859186 DOI: 10.1364/oe.497854] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Accepted: 09/02/2023] [Indexed: 10/21/2023]
Abstract
Circularly polarized light (CPL) finds diverse applications in fields such as quantum communications, quantum computing, circular dichroism (CD) spectroscopy, polarization imaging, and sensing. However, conventional techniques for detecting CPL face challenges related to equipment miniaturization, system integration, and high-speed operation. In this study, we propose a novel design that addresses these limitations by employing a quarter waveplate constructed from a diamond metasurface, in combination with a linear polarizer crafted from metallic aluminum. The diamond array, with specific dimensions (a = 84 nm, b = 52 nm), effectively transforms left-handed and right-handed circularly polarized light into two orthogonally linearly polarized beams who have a polarization degree of approximately 0.9. The aluminum linear polarizer then selectively permits the transmission of these transformed linearly polarized beams.Our proposed design showcases remarkable circular dichroism performance at a wavelength of 280 nm, concurrently maintaining high transmittance and achieving a substantial extinction ratio of 25. Notably, the design attains an ultraviolet wavelength transmission efficiency surpassing 80%. Moreover, our design incorporates a rotation mechanism that enables the differentiation of linearly polarized light and singly circularly polarized light. In essence, this innovative design introduces a fresh paradigm for ultraviolet circularly polarized light detection, offering invaluable insights and references for applications in polarization detection, imaging, biomedical diagnostics, and circular dichroic spectroscopy.
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21
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Zeng L, Han W, Ren X, Li X, Wu D, Liu S, Wang H, Lau SP, Tsang YH, Shan CX, Jie J. Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe 2 Dirac Semimetal. NANO LETTERS 2023; 23:8241-8248. [PMID: 37594857 DOI: 10.1021/acs.nanolett.3c02396] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/20/2023]
Abstract
Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant with these requirements. However, challenges remain in scalable growth and substrate-dependence for on-chip integration. Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal using a low-temperature self-stitched epitaxy (SSE) approach. The low formation energy between two precursors facilitates low-temperature multiple-point nucleation (∼300 °C), growing up, and merging, resulting in self-stitching of PdTe2 domains into a continuous film, which is highly compatible with back-end-of-line (BEOL) technology. The uncooled on-chip PdTe2/Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse of up to 10.6 μm with a large specific detectivity. Furthermore, the highly integrated device array demonstrates high-resolution room-temperature imaging capability, and the device can serve as an optical data receiver for IR optical communication. This study paves the way toward low-temperature growth of 2D semimetals for uncooled MIR sensing.
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Affiliation(s)
- Longhui Zeng
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
| | - Wei Han
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, P. R. China
| | - Xiaoyan Ren
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Xue Li
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Di Wu
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Shujuan Liu
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, P. R. China
| | - Hao Wang
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei 430205, P. R. China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom Kowloon, Hong Kong 999077, P. R. China
| | - Yuen Hong Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom Kowloon, Hong Kong 999077, P. R. China
| | - Chong-Xin Shan
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education Zhengzhou University, Zhengzhou, Henan 450052, P. R. China
| | - Jiansheng Jie
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa 999078, Macau, China
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22
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Wang SY, Li DK, Zha MJ, Yan XQ, Liu Z, Tian J. Tunable Optical Activity in Twisted Anisotropic Two-Dimensional Materials. ACS NANO 2023; 17:16230-16238. [PMID: 37530588 DOI: 10.1021/acsnano.3c06031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Twisted van der Waals structures exhibit a variety of unusual electrical and optical phenomena and could provide a powerful means for designing nanodevices with tunable chiral properties. However, programming intrinsic chiral properties of the film on the atomic scale remains a great challenge due to the limitations of fabrication and measurement techniques. Here, we report a highly tunable large optical activity of twisted anisotropic two-dimensional (2D) materials, including black phosphorus (BP), ReS2, PdSe2, and α-MoO3, by varying the twist angle between the stacked layers. The chirality can be deliberately tailored through the engineering of the symmetry, band structure, and anisotropy of 2D materials, demonstrating the high tunability of the chirality. The results show the highest thickness-normalized ellipticity value (13.8 deg μm-1, twisted ReS2) and ellipticity value (1581 mdeg, twisted BP) among the systems based on 2D materials. It is also shown that the chiroptical response exists in an extremely large spectral range from the visible to the infrared. Furthermore, the twisted ReS2 enabled spin-selective control of the information transformation. These results show that highly controllable chirality in twisted 2D anisotropic materials has considerable potential in on-chip polarization optics, nano-optoelectronics, and biology.
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Affiliation(s)
- Su-Yun Wang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - De-Kang Li
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Ming-Jie Zha
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Xiao-Qing Yan
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Zhibo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Jianguo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
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23
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Zhao Y, Yin X, Li P, Ren Z, Gu Z, Zhang Y, Song Y. Multifunctional Perovskite Photodetectors: From Molecular-Scale Crystal Structure Design to Micro/Nano-scale Morphology Manipulation. NANO-MICRO LETTERS 2023; 15:187. [PMID: 37515723 PMCID: PMC10387041 DOI: 10.1007/s40820-023-01161-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 07/02/2023] [Indexed: 07/31/2023]
Abstract
Multifunctional photodetectors boost the development of traditional optical communication technology and emerging artificial intelligence fields, such as robotics and autonomous driving. However, the current implementation of multifunctional detectors is based on the physical combination of optical lenses, gratings, and multiple photodetectors, the large size and its complex structure hinder the miniaturization, lightweight, and integration of devices. In contrast, perovskite materials have achieved remarkable progress in the field of multifunctional photodetectors due to their diverse crystal structures, simple morphology manipulation, and excellent optoelectronic properties. In this review, we first overview the crystal structures and morphology manipulation techniques of perovskite materials and then summarize the working mechanism and performance parameters of multifunctional photodetectors. Furthermore, the fabrication strategies of multifunctional perovskite photodetectors and their advancements are highlighted, including polarized light detection, spectral detection, angle-sensing detection, and self-powered detection. Finally, the existing problems of multifunctional detectors and the perspectives of their future development are presented.
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Affiliation(s)
- Yingjie Zhao
- College of Chemistry, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Xing Yin
- College of Chemistry, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Pengwei Li
- College of Chemistry, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Ziqiu Ren
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Zhenkun Gu
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450001, People's Republic of China.
| | - Yiqiang Zhang
- College of Chemistry, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Yanlin Song
- College of Chemistry, Zhengzhou University, Zhengzhou, 450001, People's Republic of China.
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing, 100190, People's Republic of China.
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24
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Dai M, Wang C, Qiang B, Jin Y, Ye M, Wang F, Sun F, Zhang X, Luo Y, Wang QJ. Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity. Nat Commun 2023; 14:3421. [PMID: 37296149 DOI: 10.1038/s41467-023-39071-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 05/22/2023] [Indexed: 06/12/2023] Open
Abstract
Filter-free miniaturized polarization-sensitive photodetectors have important applications in the next-generation on-chip polarimeters. However, their polarization sensitivity is thus far limited by the intrinsic low diattenuation and inefficient photon-to-electron conversion. Here, we implement experimentally a miniaturized detector based on one-dimensional tellurium nanoribbon, which can significantly improve the photothermoelectric responses by translating the polarization-sensitive absorption into a large temperature gradient together with the finite-size effect of a perfect plasmonic absorber. Our devices exhibit a zero-bias responsivity of 410 V/W and an ultrahigh polarization ratio (2.5 × 104), as well as a peak polarization angle sensitivity of 7.10 V/W•degree, which is one order of magnitude higher than those reported in the literature. Full linear polarimetry detection is also achieved with the proposed device in a simple geometrical configuration. Polarization-coded communication and optical strain measurement are demonstrated showing the great potential of the proposed devices. Our work presents a feasible solution for miniaturized room-temperature infrared photodetectors with ultrahigh polarization sensitivity.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bo Qiang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yuhao Jin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fakun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xuran Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yu Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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25
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Li S, Wang R, Dai C, Xu W, Zhan J. Impact of aerosols on the polarization patterns of full-sky background radiation. OPTICS EXPRESS 2023; 31:19918-19930. [PMID: 37381397 DOI: 10.1364/oe.492041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Accepted: 05/16/2023] [Indexed: 06/30/2023]
Abstract
Regarding aerosol particle-laded turbid atmospheres, full-sky background radiation polarization patterns can be adversely affected, an important factor limiting their effective near-ground observation and acquisition. We established a multiple-scattering polarization computational model and measurement system and conducted the following three tasks. (a) We thoroughly analyzed the impact of aerosol scattering characteristics on polarization distributions, calculating the degree of polarization (DOP) and angle of polarization (AOP) patterns for a more comprehensive set of atmospheric aerosol compositions and aerosol optical depth (AOD) values than calculated in previous studies. (b) We assessed the uniqueness of the DOP and AOP patterns as a function of AOD. (c) By employing a new polarized radiation acquisition system for measurements, we demonstrated that our computational models are more representative of the DOP and AOP patterns under actual atmospheric conditions. We found that under a clear sky without clouds, the impact of the AOD on the DOP was detectable. With increasing AOD, the DOP decreased, and the decreasing trend became increasingly obvious. When the AOD was above 0.3, the maximum DOP did not exceed 0.5. The AOP pattern did not change notably and remained stable, except for the contraction point at the sun position under an AOD of 2.
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26
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Xian S, Yang X, Zhou J, Gao F, Hou Y. Deep learning-enabled broadband full-Stokes polarimeter with a portable fiber optical spectrometer. OPTICS LETTERS 2023; 48:1359-1362. [PMID: 36946927 DOI: 10.1364/ol.484988] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
Portable fiber optical spectrometers (PFOSs) have been widely used in the contemporary industrial and agricultural production and life due its low cost and small volume. PFOSs mainly combine one fiber to guide light and one optical spectrometer to detect spectra. In this work, we demonstrate that PFOSs can work as a broadband full-Stokes polarimeter through slightly bending the fiber several times and establishing the mapping relationship between the Stokes parameters S^ and the bending-dependent light intensities I^, i.e., S^=f(I^). The different bending geometries bring different birefringence effects and reflection effects that change the polarization state of the out-going light. In the meanwhile, the grating owns a polarization-depended diffraction efficiency especially for the asymmetric illumination geometry that introduces an extrinsic chiroptical effect, which is sensitive to both the linear and spin components of light. The minimum mean squared error (MSE) can reach to smaller than 1% for S1, S2, and S3 at 810 nm, and the averaged MSE in the wave band from 440 nm to 840 nm is smaller than 2.5%, where the working wavelength can be easily extended to arbitrary wave band by applying PFOSs with proper parameters. Our findings provide a convenient and practical method for detecting full-Stokes parameters.
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27
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Wang J, Xie Z, Liu JA, Zhou R, Lu G, Yeow JTW. System design of large-area vertical photothermoelectric detectors based on carbon nanotube forests with MXene electrodes. NANOSCALE ADVANCES 2023; 5:1133-1140. [PMID: 36798493 PMCID: PMC9926910 DOI: 10.1039/d2na00895e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Accepted: 12/24/2022] [Indexed: 06/18/2023]
Abstract
Photothermoelectric (PTE) detectors that combine photothermal and thermoelectric conversion have emerged in recent years. They can overcome bandgap limitations and achieve effective infrared detection. However, the development of PTE detectors and the related system design are in the early phases. Herein, we present vertical PTE detectors utilizing the active layer of carbon nanotube forests with MXenes acting as top electrodes. The detector demonstrates its capacity for sensitive infrared detection and rapid infrared response. We also investigated the relationship between photoresponse and different MXene electrode types as well as their thickness, which guides the PTE detector configuration design. Furthermore, we packed the PTE detectors with a polytetrafluoroethylene (PTFE, Teflon) cavity. The photoresponse is improved and the degradation is significantly delayed. We also applied this PTE detector system for non-destructive tracking (NDT) applications, where the photovoltage mapping pattern proves the viability of the imaging track. This work paves the way toward infrared energy harvesters and customized industrial NDT measurement.
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Affiliation(s)
- Jiaqi Wang
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo 200 University Ave West Waterloo Ontario N2L 3G1 Canada +1-519-888-4567 ext. 32152
| | - Zhemiao Xie
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo 200 University Ave West Waterloo Ontario N2L 3G1 Canada +1-519-888-4567 ext. 32152
| | - Jiayu Alexander Liu
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo 200 University Ave West Waterloo Ontario N2L 3G1 Canada +1-519-888-4567 ext. 32152
| | - Rui Zhou
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo 200 University Ave West Waterloo Ontario N2L 3G1 Canada +1-519-888-4567 ext. 32152
| | - Guanxuan Lu
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo 200 University Ave West Waterloo Ontario N2L 3G1 Canada +1-519-888-4567 ext. 32152
| | - John T W Yeow
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo 200 University Ave West Waterloo Ontario N2L 3G1 Canada +1-519-888-4567 ext. 32152
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28
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Xie Z, Wang J, Yeow JTW. Flexible Multi-Element Photothermoelectric Detectors Based on Spray-Coated Graphene/Polyethylenimine Composites for Nondestructive Testing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:5921-5930. [PMID: 36649212 DOI: 10.1021/acsami.2c20487] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Photothermoelectric (PTE) detectors receive much attention owing to the superiority of self-powered, non-bias input, and friendly ambient environments, facilitating abundant prospective applications in industrial inspection, medical diagnostics, homeland security, and wearable Internet of Things. However, many drawbacks of currently applicable PTE materials, involving unstable material oxidation, an uncontrollable fabrication process, and unscalable manufacturing, hinder the development of industrial productions. Herein, we demonstrate a vertical graphene/polyethylenimine composite PTE detector fabricated with an optimized spray-coating method in compact alignment on various surfaces, achieving a significant photovoltage detectivity and responsivity of 6.05 × 107 cm Hz1/2 W-1 and 2.7 V W-1 response at a 973 K blackbody temperature radiation (2.98 μm peak wavelength). In addition, the long-term stability and resistible concave and convex bending flexibility are presented. Furthermore, a nondestructive testing system is established and verified through high-spatial-resolution and high-penetration illustration. Overall, the spray-coated and flexible PTE graphene/polyethylenimine multi-elements with broadband infrared absorption compatibility and stable energy conversion are promising candidates for future health monitoring and wearable electronics.
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Affiliation(s)
- Zhemiao Xie
- Advanced Micro-/Nano-Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, OntarioN2L 3G1, Canada
| | - Jiaqi Wang
- Advanced Micro-/Nano-Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, OntarioN2L 3G1, Canada
| | - John T W Yeow
- Advanced Micro-/Nano-Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, OntarioN2L 3G1, Canada
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29
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Zhou J, Zhang Z, Dong B, Ren Z, Liu W, Lee C. Midinfrared Spectroscopic Analysis of Aqueous Mixtures Using Artificial-Intelligence-Enhanced Metamaterial Waveguide Sensing Platform. ACS NANO 2023; 17:711-724. [PMID: 36576121 DOI: 10.1021/acsnano.2c10163] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As miniaturized solutions, mid-infrared (MIR) waveguide sensors are promising for label-free compositional detection of mixtures leveraging plentiful absorption fingerprints. However, the quantitative analysis of liquid mixtures is still challenging using MIR waveguide sensors, as the absorption spectrum overlaps for multiple organic components accompanied by strong water absorption background. Here, we present an artificial-intelligence-enhanced metamaterial waveguide sensing platform (AIMWSP) for aqueous mixture analysis in the MIR. With the sensitivity-improved metamaterial waveguide and assistance of machine learning, the MIR absorption spectra of a ternary mixture in water can be successfully distinguished and decomposed to single-component spectra for predicting concentration. A classification accuracy of 98.88% for 64 mixing ratios and 92.86% for four concentrations below the limit of detection (972 ppm, based on 3σ) with steps of 300 ppm are realized. Besides, the mixture concentration prediction with root-mean-squared error varying from 0.107 vol % to 1.436 vol % is also achieved. Our work indicates the potential of further extending this sensing platform to MIR spectrometer-on-chip aiming for the data analytics of multiple organic components in aqueous environments.
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Affiliation(s)
- Jingkai Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
| | - Zixuan Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
| | - Bowei Dong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
| | - Zhihao Ren
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
| | - Weixin Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, Singapore117608
- NUS Graduate School - Integrative Sciences and Engineering Programme (ISEP), National University of Singapore, Singapore, Singapore119077
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30
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Shen J, Zhu T, Zhou J, Chu Z, Ren X, Deng J, Dai X, Li F, Wang B, Chen X, Lu W. High-Discrimination Circular Polarization Detection Based on Dielectric-Metal-Hybrid Chiral Metamirror Integrated Quantum Well Infrared Photodetectors. SENSORS (BASEL, SWITZERLAND) 2022; 23:168. [PMID: 36616770 PMCID: PMC9823415 DOI: 10.3390/s23010168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 12/20/2022] [Accepted: 12/22/2022] [Indexed: 06/17/2023]
Abstract
Circular polarization detection enables a wide range of applications. With the miniaturization of optoelectronic systems, integrated circular polarization detectors with native sensitivity to the spin state of light have become highly sought after. The key issues with this type of device are its low circular polarization extinction ratios (CPERs) and reduced responsivities. Metallic two-dimensional chiral metamaterials have been integrated with detection materials for filterless circular polarization detection. However, the CPERs of such devices are typically below five, and the light absorption in the detection materials is hardly enhanced and is even sometimes reduced. Here, we propose to sandwich multiple quantum wells between a dielectric two-dimensional chiral metamaterial and a metal grating to obtain both a high CPER and a photoresponse enhancement. The dielectric-metal-hybrid chiral metamirror integrated quantum well infrared photodetector (QWIP) exhibits a CPER as high as 100 in the long wave infrared range, exceeding all reported CPERs for integrated circular polarization detectors. The absorption efficiency of this device reaches 54%, which is 17 times higher than that of a standard 45° edge facet coupled device. The circular polarization discrimination is attributed to the interference between the principle-polarization radiation and the cross-polarization radiation of the chiral structure during multiple reflections and the structure-material double polarization selection. The enhanced absorption efficiency is due to the excitation of a surface plasmon polariton wave. The dielectric-metal-hybrid chiral mirror structure is compatible with QWIP focal plane arrays.
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Affiliation(s)
- Jinyong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Tianyun Zhu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jing Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zeshi Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiansong Ren
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jie Deng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xu Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fangzhe Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Bo Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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